Power module with a circuit carrier and power module bridge with a number of power modules

Abstract

The invention relates to a power module (12) comprising a first circuit carrier (14) containing a carrier substrate (40), a first conductor structure (18) with an external contact area (18.2), at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2), and a further, third conductor structure (22) with an external contact area (22.2), with a number of semiconductor devices (42) arranged individually or in groups (64, 66). A multifunctional frame (50) is associated with the power module (12), in which a T+ bridge (134), a T- bridge (138), and a phase bridge (136) are received, spatially decoupled from the power module (12). The invention further relates to a power module bridge (156) with a number of power modules (12) mounted on a cooling surface (158).

Description

Technical area

[0001] The invention relates to a power module with a circuit carrier containing a carrier substrate, a first conductor structure with an external contact area, at least one second conductor structure with at least one external contact area, and a further, third conductor structure with an external contact area with a number of semiconductor components arranged individually or in groups. Furthermore, the invention relates to a power module bridge with a number of power modules mounted on a common cooling surface. State of the art

[0002] In the current state of the art, power modules, for example, those installed in a power module bridge, are additionally molded. During molding, the power module is embedded in a rigid protective housing, for example, made of plastic (molding compound). The molding compound serves to enclose and protect the interior of the power module. However, these molding compound enclosures of the power module are not particularly resistant to cracking.

[0003] From DE 11 2017 004 390 T5 a power module is known which has the following features: an insulating substrate having a front side to which a power semiconductor element is attached; a base plate connected to a back side of the insulating substrate; a housing attached to the base plate and surrounding the insulating substrate; a cover attached to the housing and forming a sealed area, and a silicone gel serving as a filling element which fills the entire sealed area and has an internal stress acting as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier with a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A first power transistor of the at least two first power transistors is arranged directly on each of the first contact surfaces and is electrically conductively connected to the respective first contact surface via its ground contact surface. Furthermore, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface.The at least two second power transistors are arranged directly on the second contact surface and are electrically connected directly to the second contact surface via their respective ground contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a second power transistor of the at least two second power transistors is electrically connected to one of the at least two third contact surfaces via its further contact surface.The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately one after the other in a longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, the second contact surface having at least two contact regions, one of the at least two contact regions being located next to each of the at least two first power transistors. The at least two first power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a first power transistor of the at least two first power transistors is electrically conductively connected via its further contact surface to the respective contact region of the at least two contact regions of the second contact surface located next to it.Here, the at least two contact regions of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor or control device. An end section of the flexible foil is electrically contacted at a contact point by heat input, with the end section of the flexible foil being positioned against protruding electrical contacts at the contact point. The end section of the flexible foil is designed as a waveguide, in particular as a deflection element. Disclosure of the invention

[0006] According to the invention, a power module is proposed with a first circuit carrier, containing a carrier substrate, with a first conductor structure with an external contact area, at least one second conductor structure with at least one external contact area, and a further, third conductor structure with an external contact area, wherein a number of semiconductor components arranged individually or in groups are provided. A multifunctional frame is assigned to the power module, in which a T+ bridge, a T- bridge, and a phase bridge are accommodated, spatially decoupled from the power module.

[0007] Due to the assignment of the multifunctional frame to the power module proposed in the invention, current-carrying components can be arranged spatially and decoupled outside the expensive and limited area of ​​the power module and, in particular, can be thermally decoupled.

[0008] In an advantageous embodiment of the power module proposed according to the invention, the multifunctional frame can be arranged above, below, or to the side of the power module, viewed in the Z direction. These design variants allow for consideration of customer requirements regarding the available installation space.

[0009] In an advantageous development of the power module proposed according to the invention, the T+ bridge and the T- bridge are accommodated in the multifunctional frame in a horizontal arrangement, wherein a distance between them is minimized.

[0010] Alternatively, it is possible to design the power module such that the T+ bridge and the T- bridge are accommodated in the multifunctional frame in a vertical arrangement, and the distance between them is minimized. Finally, in a further embodiment, the power module proposed by the invention can be designed such that the T+ bridge and the T- bridge are accommodated side by side in the multifunctional frame, and the distance between them is minimized.

[0011] The design variants described above advantageously achieve that, due to the minimized distance between the T+ bridge and the T- bridge, magnetic fields occurring in the current-carrying T+ and T- bridges cancel each other out, thus enabling a low-inductance design. A low-inductance design, in turn, enables short switching times, which is extremely beneficial to the switching behavior of the power module proposed according to the invention.

[0012] In an advantageous further development of the power module proposed according to the invention, an insulating layer, particularly designed as insulating paper or cardboard, is arranged in the multifunctional frame between the T+ bridge and the T- bridge. This allows the distances between the T+ bridge and the T- bridge to be significantly minimized.

[0013] Advantageously, the power module proposed according to the invention provides that the T+ bridge and the T- bridge can be contacted via press-in pins. Press-in pins represent a proven technology for ensuring robust electrical contact throughout the service life.

[0014] In an advantageous development of the power module proposed according to the invention, it is provided that, when the power module is joined to the multifunction frame, the T+ bridge, the T- bridge, and the phase bridge are arranged in a first plane that runs above or below a second plane in which the power module is arranged with semiconductor components arranged individually or in groups on its base surface. The arrangement of these planes enables, in particular, thermal decoupling and relocation of the current-carrying components into the multifunction frame in which the said T+ bridge, T- bridge, and the phase bridge are arranged.

[0015] The power module proposed according to the invention is further characterized in that the multifunctional frame assigned to the power module in the Z direction is surrounded by a cover made of a plastic material or a molding compound. The cover made of a plastic material or the molding compound provides effective protection against the effects of environmental influences. The power module proposed according to the invention further provides that the T+ bridge and / or the T- bridge are provided with integrated contact surfaces.

[0016] In the power module proposed according to the invention, the external contact areas are shifted in the Z direction relative to the power module into the multifunctional frame assigned to it. The relocation of the external contact areas from the power module to the multifunctional frame also contributes to improved utilization of the circuit carrier area or the chip area.

[0017] In the power module proposed according to the invention, the multifunctional frame assigned to the power module is provided with a number of press-in pins, of which a selected number are accessible for signal tapping.

[0018] Furthermore, the invention relates to a power module bridge comprising a number of power modules, wherein the power modules are accommodated on a cooling surface, and the power module bridge is arranged laterally next to a battery system and is electrically connected thereto via a connecting device. Alternatively, it is possible to place a number of power modules accommodated on a cooling surface and the power module bridge comprising a number of power modules above or below a battery system, and to electrically connect the power module bridge to the battery system via a corresponding connecting device. Advantages of the invention

[0019] The solution proposed according to the invention is characterized in that a surface, in particular a base surface of the power module, which is equipped with semiconductor elements, whether individually or in groups, can be better utilized because the surface otherwise used for current-carrying paths is relocated to a further level of a multifunctional frame. The multifunctional frame assigned to the power module can be arranged both above and below the power module in the Z direction. Furthermore, it is possible to arrange the multifunctional frame next to the power module, likewise spatially and thermally decoupled from it. A further advantage of the solution proposed according to the invention is that the current-carrying paths in the form of the T+ bridge and the T- bridge are accommodated in a horizontal arrangement, a vertical arrangement, or a side-by-side arrangement in the multifunctional frame.If the distance between the T+ bridge and the T- bridge is minimized, the magnetic fields that arise in the T+ bridges or T- bridges due to the current flow cancel each other out. This, in turn, results in a low-inductive connection. A low-inductive connection is extremely advantageous in terms of short switching times and significantly increases the performance of the power module proposed by the invention with the multifunctional frame assigned to it. The solution proposed by the invention can also reduce the complexity of the power module. If the semiconductor components accommodated individually or in groups in the power module are arranged on its base surface, extremely advantageous cooling and thus heat dissipation of the semiconductor components can be achieved via a cooling surface.The cooling surface can be connected to the underside of the power module by means of a flat sintered connection or by means of a solder / adhesive connection. This creates short paths through which the waste heat generated during operation of the semiconductor components can be dissipated and transported away by a cooling medium. Standardized interfaces for signal transmission can be implemented in the form of press-in pins. The use of press-in pins or press-in pins represents a common and robust method for achieving electrical connections with overmolded components. If the populated and electrically contacted power module, or the associated multifunctional frame, is provided with a cover made of plastic or molding compound, it can be advantageously protected against environmental and temperature influences as well as pollutants.The press-in pins protruding beyond the cover still enable electrical contact between the arrangement of the power module and the multifunctional frame assigned to it, whether arranged above, below, or to the side of the power module. Depending on the requirements or the electrical loads to be controlled, the power module proposed according to the invention can comprise 12, 8, or 4 semiconductor components, wherein the semiconductor components can be MOSFETs, transistors, IGBTs, diodes, and the like. The use of press-in pins also enables standard electrical contact for the power contacts. With regard to contacting the power module proposed according to the invention with the press-in pins assigned to it, the implementation of integral connections, for example by welding, is unnecessary.The press-in pins enable effective and robust electrical contact. Short description of the drawings

[0020] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0021] They show: Fig. 1 a plan view of a first circuit carrier of a power module, containing a carrier substrate, and a possible arrangement of semiconductor components, Fig. 2 a plan view of a power module with separate cooling and layout areas with laterally arranged areas for press-in pins, Fig. 3 an arrangement of a power module mounted on a cooling surface and a multifunctional frame arranged above it in the Z direction, Fig. 4 a multifunctional frame which is joined to a power module in the assembly direction, Fig. 5 a perspective view of a plastic-coated arrangement comprising a multifunctional frame and a power module, Fig. 6 an exploded view of the components of the multifunctional frame, Fig. 7 a perspective view of the multifunctional frame with T+ bridges and T- bridges arranged therein, Fig. 8 a horizontal arrangement of a T+ bridge and a T- bridge, Fig. 8.1, 8.2 schematic representations of possible arrangements of the T+ bridge and the T- bridge in vertical arrangement, Fig. 9 a plan view of a power module bridge with power modules arranged side by side on a cooling surface and Fig. 10 a possible arrangement of a Fig. 9 shown power module bridge next to a battery system. Embodiments of the invention

[0022] In the following description of the embodiments of the invention, identical or similar elements are designated by the same reference numerals, whereby a repeated description of these elements is omitted in individual cases. The figures only schematically illustrate the subject matter of the invention.

[0023] Fig. 1 shows a plan view of a power module 12, in particular of its first circuit carrier 14.

[0024] The top view according to Fig. 1 shows that a carrier substrate 40 of the first circuit carrier 14 is provided with a number of conductor structures 18, 20A, 20B, 22. The first circuit carrier 14 extends in an X,Y plane 10, wherein the first circuit carrier 14 is provided with an electrical insulation layer 16. Located on this, separated from one another by channel-shaped interruptions, is a first conductor structure 18, which has an external contact region 18.2. Furthermore, symmetrically to a central longitudinal axis 24 of the power module 12, second conductor structures 20A, 20B are located opposite one another on the first circuit carrier 14. Each of the two second conductor structures 20A, 20B comprises an external contact region 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the first circuit carrier 14 or to its electrical insulation layer 16, which has at least one external contact area 22.2.

[0025] The aforementioned conductor structures 18, 20A, 20B, 22 are electrically separated from one another and applied to the first circuit carrier 14 essentially symmetrically to the central longitudinal axis 24. Position 36 denotes an active area, and a layout area flowing around this area for the current conduction is designated by reference numeral 38. For example, AMB (Active Metal Brazing), which contains OFC (oxygen-free copper) / Si3N4 / OFC, can be selected as the carrier substrate 40 of the first circuit carrier 14.

[0026] According to the illustration Fig. 2 shows a plan view of the power module 12, wherein in this schematic representation semiconductor components 42 are arranged on active surfaces 36, which may be, for example, transistors, MOSFETs or other semiconductor components that can be used as semiconductor switches. Fig. 2 that a first group 64 of semiconductor components 42 is accommodated on the active surfaces 36. The individual semiconductor components 42 can be designed, for example, as MOSFETs and have control terminals 34 on their outer sides, via which a control (not shown in detail) of the individual semiconductor components 42 of the first group 64 of semiconductor components 42 can be carried out. Analogous to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, on the outer region of which control terminals 34 are each formed. The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control terminals 34, although this is not shown in the illustration according to Fig. 2 is not shown in detail.

[0027] Furthermore, the top view according to Fig. 2 shows that in the Fig. 2, areas are provided on the long sides of the first circuit carrier 14 in the form of a carrier substrate 40, in which press-in pins 76 - 94 are inserted into the plane of the drawing according to Fig. 2. In detail, these are first and second press-in pins 76, 78 as well as third and fourth press-in pins 80, 82 and, arranged opposite one another, fifth and sixth press-in pins 84, 86. In the area of ​​the opposite end face of the first circuit carrier 14, seventh and eighth press-in pins 88, 90 are provided as well as ninth and tenth press-in pins 92, 94. The spatial arrangement of the press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 is shown in the illustrations according to Fig. 3 and Fig. 4 for more details.

[0028] According to the side view Fig. 3 shows that a power module 12, shown here from the outside, is mounted with its underside 120 on a cooling surface 106. Viewed in the Z direction 54, a multifunctional frame 50 is located above the power module 12. On the top side of the Fig. In the side view of the multifunction frame 50 shown in Figure 3, the individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here located in the same plane of the drawing—protrude vertically upwards. The press-in pins allow for robust and simple electrical contact between the components within the multifunction frame 50 and the power module 12 arranged underneath.

[0029] Fig. 4 shows that the multifunctional frame 50, which is similar Fig. 3, is placed in the assembly direction 130 on the power module 12. The multifunctional frame 50 represents a first level 60, whereas the power module 12, in particular its base 144, represents a second level 62. In the illustration according to Fig. 4 it can be seen that the Fig. 1 shown external contact areas 18.2, 20A.2, 20B.2 and the Fig. 4 not shown external contact area 22.2 from the power module 12, ie from the second level 62 to the first level 60. The multifunctional frame 50 according to the illustration in Fig. 4 shows a different representation from that shown in Fig. 3 different number of press-in pins 76 - 94.

[0030] The perspective view according to Fig. 5 shows that the external contact areas 18.2 protrude laterally from the short end faces of the multifunctional frame 50 or from its cover, and the external contact areas 20A.2, 20B.2 protrude opposite these, so that they can be electrically contacted with other electrical components, for example by means of integral connections. The perspective top view according to Fig. Figure 5 further shows that the multifunctional frame 50 comprises a cover made of plastic material 132, through which the current-carrying components arranged in the multifunctional frame 50, in particular the current-carrying components arranged there, are protected from the outside. In order to enable contacting of the components arranged in the multifunctional frame 50 or in the underlying power module 12, in particular the semiconductor components 42, as well as the components arranged in the multifunctional frame, the press-in pins, of which Fig. 5, only a few are shown, protrude above the top of the cover of the multifunctional frame 50 made of plastic material 132.

[0031] According to the illustration Fig. Figure 6 shows an exploded view of the multifunction frame 50 and the components enclosed within it. These are a T+ bridge 134, a phase bridge 136, and a T- bridge 138. These can also be referred to as the first current-carrying contact surface 68 and the second current-carrying contact surface 70, respectively.

[0032] The exploded view according to Fig. 6, it can also be seen that the phase bridge 136 can be electrically contacted laterally via the seventh press-in pin 88 and the tenth press-in pin 94 - shown here as an example. The further press-in pins assigned to the phase bridge 136, namely the ninth and tenth press-in pins 92 and 94, can be used in the exploded view according to Fig. 6 semiconductor components 42 not shown but arranged on the bottom 144 of the power module 12 are contacted.

[0033] Furthermore, the illustration shows Fig. 6, the T+ bridge 134 and the T- bridge 138 are arranged one above the other. Between them, an insulating layer 140 made of paper or cardboard is arranged. The T+ bridge 134 can be electrically contacted via contact strips 142 (see also perspective view according to Fig. 7). The insulation layer 140, which is located between the T+ bridge 134 and the T- bridge 138, separates the bridges from each other in the vertical direction. Furthermore, the insulation layer 140 can Fig. 8 can be defined. The smaller the distance 146 between the T+ bridge 134 and the T- bridge 138 can be set, the greater the degree of mutual cancellation of the magnetic fields that run in the T+ bridge 134 and the T- bridge 138, respectively, can be achieved.

[0034] According to the perspective view Fig. 7 shows the first level 60, which is defined by the components in the multifunctional frame 50. Analogous to the illustration according to Fig. 6, the phase bridge 136 can be contacted by the seventh press-in pin 88 and the eighth press-in pin 90. The semiconductor components 42 arranged in the power module 12 can be electrically contacted or controlled via the further press-in pins 92, 94 shown here, which protrude vertically through the multifunctional frame 50. In the right-hand part of the perspective top view according to Fig. 7 shows the T+ bridge 134 (first current-carrying contact surface 68), under which in the exploded view according to Fig. 6 the T-bridge 138 is located.

[0035] According to the side view Fig. 8 shows that in the multifunctional frame 50, which is shown in Fig. 8 is not shown, the T+ bridge 134 and the T- bridge 138 extend in a horizontal arrangement 150, forming a small distance 146 in the vertical direction. The smaller the distance 146 can be selected between the T+ bridge 134 and the T- bridge 138, the more favorable a low-inductive connection is achieved. The small distance 146 between the components T+ bridge 134 and T- bridge 138 arranged in a horizontal arrangement 150 advantageously enables the magnetic fields that develop in the T+ bridge 134 and the T- bridge 138, respectively, to cancel each other out during operation. This ensures a low-inductive connection, which allows very short switching times for the electronic components in the form of MOSFETs, IGBTs, diodes, etc. The side view according to Fig. 8 also shows the contact strips 142, which extend partly parallel to the phase bridge 136.

[0036] The Fig. 8.1 and 8.2 it can be seen that alternatively to the representation according to Fig. 8 with the horizontal arrangement 150 shown there, the T+ bridge 134 and the T- bridge 138 can also be formed in a vertical arrangement 148. Even in the vertical arrangement 148, the distance 146 between the T+ bridge 134 and the T- bridge 138 can be advantageously minimized in the installed state. The smaller the distance 146 between the T+ bridge 134 and the T- bridge 138 can be maintained, even in the vertical arrangement 148, the greater the mutual cancellation of the magnetic fields running in the current-carrying components T+ bridge 134 and T- bridge 138 can be achieved. This enables, analogously to the horizontal arrangement 150 according to Fig. 8 also has a low-inductive connection, which enables short switching times of the semiconductor components 42. The same applies analogously to the representation according to Fig. 8.2.

[0037] From the Fig. 8, Fig. 8.1 and 8.2, it follows that the arrangement of the T+ bridge 134 and the T- bridge 138 within the functional frame 50 enables a low-inductive connection, which enables short switching times for the electronic semiconductor components 42 in the form of MOSFETs, IGBTs, diodes or the like arranged in the second level 62, preferably at the bottom 144 of the power module 12.

[0038] The top view according to Fig. 9 shows a power module bridge 156. This bridge comprises a number of power modules 12 with a multifunctional frame 50 arranged above them. Fig. Figure 9 shows that, in this embodiment of the power module bridge 156, three power modules 12 are arranged side by side on a cooling surface 158. The external contact areas 18.2, 20A.2, 20B.2, and 22.2, respectively, projecting from the short end faces of the multifunctional frame 50, serve to contact the power modules 12, which are covered by the multifunctional frame 50. A cooling medium flows through the cooling surface 158, on which the power modules 12 are mounted for their cooling, and dissipates the heat generated there during operation of the power modules 12.

[0039] Fig. 10 is a possible arrangement of the Fig. 9 shown power module bridge 156 in relation to a battery system 162.

[0040] Fig. 10 shows that the power module bridge 156 in the illustration according to Fig. 10 is arranged in a lateral arrangement 164 with respect to the battery system 162. The battery system 162 comprises a number of battery cells 160, which in the illustration according to Fig. 10 are only partially shown. The lateral arrangement 164 is characterized in that in this embodiment of the connection of the power module bridge 156, this is placed laterally to the power module bridge 156 via a connecting device 168. As can be seen from the illustration according to Fig. 10, the functional frame 50 and the press-in pins protrude vertically upwards above the top of the plastic cover 132. The press-in pins, not further described here, are used for electrical contact with the power modules 12 and for signal tapping. From the illustration according to Fig. 10 further shows that the cooling surface 158 of the power module bridge 156 comprises at least one line connection 166 for supplying a cooling medium. By incorporating the cooling surface 158 into a continuous cooling circuit, continuous dissipation of the heat generated during operation of the semiconductor components 42 of the power modules 12 can be ensured. According to the illustration Fig. 10 further shows that the external contact areas 18.2, which are displaced from the plane of the power module 12 (cf. second plane 62) into the first plane 60, i.e., into the multifunction frame 50, can be electrically contacted from the side. In contrast, the press-in pins protruding above the top side of the multifunction frame 50 can be electrically contacted from the top side of the power module bridge 156. Instead of the Fig.In the lateral arrangement 164 of the power module bridge 156 relative to the battery system 162 shown in Figure 10, the power module bridge 156 can also be electrically contacted on the top side of the battery system 162 or on its bottom side. In this case, the design of the connecting device 168 would be different and, depending on the connection plane, would be configured accordingly in the Z direction 54.

[0041] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, numerous modifications are possible within the scope of the claims, which are within the scope of one skilled in the art. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 11 2017 004 390 T5

[0003] DE 10 2014 219 998 B4

[0004] EP 2 418 925 B1

[0005]

Claims

[1] Power module (12) with a first circuit carrier (14) containing a carrier substrate (40), with a first conductor structure (18) with an external contact area (18.2), at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) with an external contact area (22.2), with a number of semiconductor components (42) arranged individually or in groups (64, 66), characterized by that the power module (12) is assigned a multifunctional frame (50) in which, spatially decoupled from the power module (12), a T+ bridge (134), a T- bridge (138) and a phase bridge (136) are accommodated. [2] Power module (12) according to claim 1, characterized by that the multifunctional frame (50) is arranged above or below the power module (12) as seen in the Z direction (54). [3] Power module (12) according to claims 1 and 2, characterized bythat the T+ bridge (134) and the T- bridge (138) are accommodated in the multifunctional frame (50) in a horizontal arrangement (150) and a distance (146) between them is minimized. [4] Power module (12) according to claims 1 and 2, characterized by that the T+ bridge (134) and the T- bridge (138) are accommodated in the multifunctional frame (50) in a vertical arrangement (148) and a distance (146) between them is minimized. [5] Power module (12) according to claims 1 and 2, characterized by that the T+ bridge (134) and the T- bridge (138) are accommodated next to each other in the multifunctional frame (50) and a distance (146) between them is minimized. [6] Power module (12) according to claims 1 to 5, characterized by that an insulating layer (140), in particular an insulating paper or an insulating cardboard, is arranged in the multifunctional frame (50) between the T+ bridge (134) and the T- bridge (138). [7] Power module (12) according to claims 1 to 6, characterized by that the T+ bridge (134) can be contacted via press-in pins (88, 90). [8] Power module (12) according to claims 1 to 6, characterized by that the T- bridge (138) can be contacted via press-in pins (78, ?). [9] Power module (12) according to claims 1 to 8, characterized by in that, in the joined state of the power module (12) with the multifunctional frame (50), the T+ bridge (134), the T- bridge (138) and the phase bridge (136) are arranged in a first plane (60) which lies above or below a second plane (62) in which the power module (12) is accommodated with semiconductor components (42) arranged individually or in groups (64, 66) on a base surface (144). [10] Power module (12) according to claims 1 to 9, characterized bythat the multifunctional frame (50) assigned to the power module (12) in the Z direction (54) is surrounded by a cover made of a plastic material (132) or by a molding compound. [11] Power module (12) according to claims 1 to 10, characterized by that the T+ bridge (134) and / or the T- bridge (138) is provided with integrated contact surfaces. [12] Power module (12) according to claims 1 to 11, characterized by that the external contact areas (18.2, 20A.2, 20B.2, 22.2) are displaced in the Z direction (54) with respect to the power module (12) in the multifunctional frame (50) assigned to it. [13] Power module (12) according to claims 1 to 12, characterized by that the multifunctional frame (50) assigned to the power module (12) is provided with a number of press-in pins (76 - 94), of which selected press-in pins (88) serve for a signal tap (154). [14] Power module bridge (156) with a number of power modules (12) according to one of claims 1 to 13, characterized by that the power modules (12) are accommodated on a cooling surface (158) and the power module bridge (156) is placed in a lateral arrangement (164) next to a battery system (162) and is connected to it via a connecting device (168). [15] Power module bridge (156) with a number of power modules (12) according to one of claims 1 to 13, characterized by that the power modules (12) are accommodated on a cooling surface (158) and the power module bridge (156) is placed above or below a battery system (162) and is connected to it via a connecting device (168).

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