METHOD FOR MANUFACTURING A LIGHT-EMPLOYING DEVICE AND SEPARATION METHOD

Abstract

A method for manufacturing a light-emitting device comprises preparing a stack body, which includes a substrate and a semiconductor layer on the substrate; and separating the substrate from the semiconductor layer by irradiating the stack body with laser light. A first region of the stack body, corresponding to an outer circumferential region of the semiconductor layer, and a second region of the stack body, corresponding to a central region of the semiconductor layer, are irradiated with the laser light simultaneously during the separation process. The irradiation intensity of the laser light in the second region of the stack body is greater than the irradiation intensity of the laser light in the first region of the stack body.

Description

REFERENCE TO RELATED REGISTRATIONS

[0001] The present application claims priority over Japanese patent application No. 2023-122673, filed on July 27, 2023, the entire contents of which are hereby incorporated by reference. BACKGROUND 1. Technical area

[0002] The embodiments described herein relate generally to a method for manufacturing a light-emitting device and a separation method. 2. Description of the state of the art

[0003] It is known to separate a substrate from a semiconductor layer when manufacturing a light-emitting device (see, for example, Japanese patent publication no. 2013-42191). SUMMARY

[0004] One embodiment is directed towards a method for manufacturing a light-emitting device and a separation method, in which the yield can be increased.

[0005] A method for manufacturing a light-emitting device according to one embodiment of the invention comprises preparing a stack body comprising a substrate and a semiconductor layer on the substrate; and separating the substrate from the semiconductor layer by irradiating the stack body with laser light. A first region of the stack body, corresponding to an outer circumferential region of the semiconductor layer, and a second region of the stack body, corresponding to a central region of the semiconductor layer, are irradiated with laser light simultaneously during the separation process. The irradiation intensity of the laser light in the second region of the stack body is greater than the irradiation intensity of the laser light in the first region of the stack body.

[0006] A separation method for a stacked body according to one embodiment of the invention comprises separating a substrate from a semiconductor layer by irradiating the stacked body with laser light. A first region of the stacked body, corresponding to an outer circumferential region of the semiconductor layer, and a second region of the stacked body, corresponding to a central region of the semiconductor layer, are irradiated with laser light simultaneously during the separation process. The irradiation intensity of the laser light in the second region of the stacked body is greater than the irradiation intensity of the laser light in the first region of the stacked body.

[0007] According to embodiments of the invention, a method for manufacturing a light-emitting device and a separation method can be provided, in which the yield can be increased. SHORT DESCRIPTION OF THE CHARACTERS

[0008] A more complete appreciation of embodiments of the invention and many of its associated advantages can easily be achieved by referring to the following detailed description when considered in conjunction with the accompanying figures. Fig. Figure 1 is a schematic top view showing a stacked body being processed in a method for manufacturing a light-emitting device according to one embodiment. Fig. Figure 2 is a schematic cross-sectional representation to illustrate a preparation process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 3 is a schematic cross-sectional representation to illustrate a separation process in the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 4 is a schematic cross-sectional representation to illustrate the separation process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 5 is a schematic cross-sectional representation to illustrate a support process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 6 is a schematic cross-sectional representation to illustrate a removal process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 7 is a schematic cross-sectional representation to illustrate a cutting process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 8 is a schematic cross-sectional representation to illustrate a fastening process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 9 is a schematic cross-sectional representation to illustrate an arrangement process of the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 10 is a schematic top view showing a mask used in the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 11 is a schematic enlarged top view showing a section of the mask used in the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 12 is an enlarged schematic cross-sectional representation showing a section of the mask used in the method for manufacturing the light-emitting device according to the embodiment. Fig. Figure 13 is a schematic top view showing a stacked body processed in a method for manufacturing a light-emitting device according to a modification of the embodiment. Fig. Figure 14 is a schematic top view showing a mask used in the method for manufacturing the light-emitting device according to the modification of the embodiment. Fig. Figure 15 is a schematic enlarged top view showing a section of the mask used in the method for manufacturing the light-emitting device according to the modification of the embodiment. Fig. Figure 16 is a schematic enlarged top view showing a section of a mask used in a method for manufacturing a light-emitting device according to another modification of the embodiment. Fig. Figure 17 is a schematic enlarged top view showing a section of a mask used in a method for manufacturing a light-emitting device according to another modification of the embodiment. DETAILED DESCRIPTION

[0009] Embodiments of the invention will now be described with reference to the figures.

[0010] The figures may be schematic or conceptual; and the relationships between the thickness and width of sections, the size ratios between sections, etc., need not necessarily be the same as the actual values. The dimensions of elements or their ratios may be represented differently among the figures, even when the same element is depicted.

[0011] In the description and figures, components similar to those already described are marked with the same reference numbers; and a detailed description is omitted where appropriate.

[0012] For better understanding of the following description, the arrangements and configurations of the elements or sections thereof are described using an orthogonal XYZ coordinate system. The X-axis, Y-axis, and Z-axis are orthogonal to each other. The direction in which the X-axis extends is referred to as the "X-direction"; the direction in which the Y-axis extends is referred to as the "Y-direction"; and the direction in which the Z-axis extends is referred to as the "Z-direction." For clarity, the Z-direction in the direction of the arrow is referred to as "up / above," and the opposite direction is referred to as "down / below," but these directions are independent of the direction of gravity. Viewing in an orientation along the Z-direction is referred to as "a plan view." End views showing only cross-sections can be used as cross-sectional views. Method for manufacturing a light-emitting device

[0013] Fig. Figure 1 is a schematic top view showing a stacked body being processed in a method for manufacturing a light-emitting device according to one embodiment.

[0014] Fig. Figure 2 is a schematic cross-sectional view to illustrate a preparation process in the method for manufacturing the light-emitting device according to the embodiment.

[0015] Fig. Figure 3 is a schematic cross-sectional view to illustrate a separation process in the method for manufacturing the light-emitting device according to the embodiment.

[0016] Fig. Figure 4 is a schematic cross-sectional view to illustrate the separation process in the method for manufacturing the light-emitting device according to the embodiment.

[0017] Fig. Figure 5 is a schematic cross-sectional view to illustrate a support process in the method for manufacturing the light-emitting device according to the embodiment.

[0018] Fig. Figure 6 is a schematic cross-sectional view to illustrate a removal process in the method for manufacturing the light-emitting device according to the embodiment.

[0019] Fig. Figure 7 is a schematic cross-sectional view to illustrate a cutting process in the method for manufacturing the light-emitting device according to the embodiment.

[0020] Fig. Figure 8 is a schematic cross-sectional view to illustrate a fastening process in the method for manufacturing the light-emitting device according to the embodiment.

[0021] Fig. Figure 9 is a schematic cross-sectional view to illustrate an arrangement process in the method for manufacturing the light-emitting device according to the embodiment.

[0022] Fig. Figure 2 schematically represents a cross-sectional view along line II-II, which is shown in Fig. 1 is shown. Fig. 3 to Fig. Figure 9 schematically represents cross-sectional views corresponding to the position of line II-II of Fig. 1 in every process.

[0023] As in the Fig. 1 to Fig. As shown in section 4, the method for manufacturing the light-emitting device according to the embodiment comprises a preparation process and a separation process. The separation process is carried out after the preparation process. Preparation process

[0024] As in the Fig. 1 and Fig. As shown in Figure 2, a stacking body 30 is prepared in the preparation process. The stacking body 30 comprises a substrate 10 and a semiconductor layer 20 stacked on the substrate 10. The stacking body 30 can be purchased or fabricated. If the stacking body 30 is fabricated, it can be produced by stacking the semiconductor layer 20 on the substrate 10. A first surface 20a of the semiconductor layer 20 of the stacking body 30 faces a first surface 10a of the substrate 10. The stacking body 30 may include an electrode 21 on one side of the second surface 20b; and the second surface 20b is positioned on the side opposite the first surface 20a of the semiconductor layer 20. In the figure shown in Figure 2, the stacking body 30 comprises a substrate 10 and a semiconductor layer 20 stacked on the substrate 10. Fig. In the example shown, the stack body 30 comprises a coating layer 25 that covers the second surface 20b of the semiconductor layer 20 and the first surface 10a of the substrate 10.

[0025] The stacked body 30 comprises a multitude of outer circumferential regions 31 and a multitude of central regions 32 in a top view (e.g. Fig. 1) Each central region 32 is positioned within the corresponding outer circumferential region 31. The outer circumferential region 31 and the central region 32 can be named according to their position relative to the corresponding semiconductor layers 20, but need not be circumferential regions and central regions of the stack body 30 itself. Hereinafter, the outer circumferential region 31 and the central region 32 can be referred to as a first region and a second region, respectively. As in Fig. As shown in Figure 1, the outer circumferential region 31 and the central region 32 are subdivided by a boundary BD1, which is a virtual line. An outer circumferential edge 31e of the outer circumferential region 31 overlaps an outer circumferential edge 20e of the semiconductor layer 20 in the top view. A center point 32c of the central region 32 overlaps a center point 20c of the semiconductor layer 20 in the top view. The outer circumferential region 31 and the central region 32 therein correspond to an outer circumferential part (i.e., the outer part encompassing the outer circumferential edge 20e) and the central part (i.e., the inner part encompassing the center point 20c) of the semiconductor layer 20 in the top view. In the Fig. In the example shown, the outer shape of the semiconductor layer 20 is rectangular. The outer shape of the semiconductor layer 20 is not limited to rectangular and can be polygonal (other than rectangular) or circular. The corners of the polygon may or may not be cut out. The sides of the polygon can be straight lines or curves.

[0026] In the Fig. In the example shown, the outer shape of each outer perimeter region 31 is rectangular. Similarly, the outer shape of each central region 32 (i.e., the outer shape defined by the boundary BD1, which is a virtual line) is rectangular. In the example shown in Fig. In the example shown, the boundary BD1 is positioned between the outer circumferential edge 31e of the outer circumferential region 31 and the center point 32c of the central region 32 therein. For example, a distance L1 between the boundary BD1 and the outer circumferential edge 31e of the outer circumferential region 31 is equal to a distance L2 between the boundary BD1 and the center point 32c of the central region 32. The distance L1 may be smaller than the distance L2 in one specific implementation, or it may be larger than the distance L2 in another specific implementation. The outer shape of each outer circumferential region 31 corresponds to the outer shape of the semiconductor layer 20. The outer shape of the central region 32 may be shaped like those described above for the outer shape of the semiconductor layer 20. The outer shape of the outer circumferential region 31 may be the same as the outer shape of the central region 32, or it may differ from it.This is similar for the outer shape of an intermediate area 33, which is described below. Separation process

[0027] In the separation process, as it occurs in the Fig. 3 and Fig. As shown in Figure 4, the substrate 10 is separated from the semiconductor layer 20 by irradiating the stack body 30 with laser light 62 from a laser irradiation device 60. The laser light 62 is incident from one side of the second surface 10b, which is positioned on the side opposite the first surface 10a of the substrate 10, passes through the substrate 10, and reaches the vicinity of the interface between the substrate 10 and the semiconductor layer 20 (i.e., the contact surface between the first surface 10a of the substrate 10 and the first surface 20a of the semiconductor layer 20). If the semiconductor layer 20 comprises gallium nitride (GaN), the substrate 10 can be separated from the semiconductor layer 20 by the gallium nitride present near the interface between the semiconductor layer 20 and the substrate 10, which is decomposed by the laser light 62 into gallium metal and nitrogen gas.

[0028] In the separation process, irradiation with laser light 62 is carried out simultaneously on the central region 32 and the outer circumferential region 31. That is, in the separation process, irradiation with laser light 62 is performed on both the central region 32 and the outer circumferential region 31. If the laser light 62 is pulsed, a single irradiation with laser light 62, from the beginning to the end of the irradiation with a prescribed pulse width, is considered a single irradiation with laser light 62. In the separation process, irradiation with laser light 62 is performed on the entire central region 32 and the entire outer circumferential region 31.

[0029] In the separation process, the irradiance of the laser light 62 in the central region 32 is adjusted so that it is greater than the irradiance of the laser light 62 in the outer circumferential region 31, which corresponds to this. The irradiance is expressed as energy per unit area (J / cm²). 2 ) expressed. The irradiance of the laser light 62 in the central region 32, for example, is no less than 1.0 J / cm². 2 and no more than 1.2 J / cm² 2 The irradiance of the laser light 62 in the outer circumference area 31, which corresponds to this, is, for example, no less than 0.8 J / cm². 2 and not more than 1.0 J / cm² 2 .

[0030] If the outer circumferential region 31 and the central region 32 within it of the stack body 30 are irradiated with the same amount of laser light 62, there are cases in which the outer circumferential region 31 separates before the central region 32 separates. If the separation of the outer circumferential region 31 and the separation of the central region 32 occur at different times, the semiconductor layer 20 can become distorted, and delamination defects, such as cracks in the semiconductor layer 20, can occur. The reasons for this are as follows.

[0031] For example, if the stack body 30 is produced by forming the semiconductor layer 20, which comprises gallium nitride (having a lower coefficient of thermal expansion than sapphire), on the sapphire substrate 10, it is necessary to form the semiconductor layer 20 in a state where the substrate 10 is heated to a high temperature. Here, "high temperature" refers to approximately 1,000°C. When the semiconductor layer 20 is cooled from the high temperature to room temperature after its formation, the contraction of the substrate 10 is greater than the contraction of the semiconductor layer 20, and thus the stack body 30 can have a shape in which the center of the substrate 10 is concave towards the side of the first surface 10a. On the other hand, after the substrate 10 is separated, since the electrode 21 (e.g.,Gold) has a higher coefficient of thermal expansion than gallium nitride, the difference in coefficients of thermal expansion between the semiconductor layer 20 and the electrode 21, such that the semiconductor layer 20 has a shape in which the center of the semiconductor layer 20 is concave towards the side of the first surface 20a. Thus, the directions of concavity of the semiconductor layer 20 before and after separation of the substrate 10 are opposite, and thus the part corresponding to the outer circumferential region 31 exhibits a greater voltage change than the part corresponding to the central region 32; and the residual voltage of the outer circumferential region 31 is greater than the residual voltage of the central region 32. Here, the "residual voltage" refers to the voltage remaining after irradiation with the laser light 62.It is assumed that, as a result, the outer circumferential region 31 separates before the central region 32 separates when the laser light irradiation is carried out with the same amount of irradiation on the outer circumferential region 31 and the central region 32 of the stacked body 30.

[0032] In contrast, by adjusting the irradiance of the laser light 62 in the central region 32 to be greater than the irradiance of the laser light 62 in the outer region 31, the separation of the central region 32 can occur earlier, and the separation of the outer region 31 can be delayed. As a result, the time difference between the separation of the outer region 31 and the separation of the central region 32 can be reduced. Consequently, the occurrence of delamination defects, such as cracks in the semiconductor layer 20, can be reduced, and the yield can be increased. The time difference between the separation of the outer region 31 and the separation of the central region 32 can be eliminated, and the occurrence of delamination defects can be further reduced, by simultaneously performing the separation of the outer region 31 and the separation of the central region 32 within it.

[0033] Examples of techniques for adjusting the irradiation intensity of the laser light 62 in the central region 32 so that it is greater than the irradiation intensity of the laser light 62 in the outer peripheral region 31 include the use of a mask. In the separation process according to the embodiment, a mask 70 is located on the side of the stack body 30 where the irradiation with the laser light 62 is carried out, as shown in Fig. Figure 3 shows that, in other words, in the stacked body 30, in which the substrate 10 is positioned on the semiconductor layer 20, the mask 70 is located above (in the Z direction) the stacked body 30. The mask 70 comprises a plurality of first surfaces 71 corresponding to the outer perimeter regions 31 and a plurality of second surfaces 72 corresponding to the central regions 32. The mask 70 is positioned such that the first surfaces 71 overlap the outer perimeter regions 31 in a top view and the second surfaces 72 overlap the central regions 32 in a top view.

[0034] In the separation process of the Fig. 1 to Fig. In the example shown in Figure 9, irradiation with laser light 62 is carried out simultaneously on the first and second surfaces 71 and 72 with the same irradiation intensity. The irradiation intensity of the laser light 62, which is guided through the second surface 72 and directed onto the central region 32, is set so that it is greater than the irradiation intensity of the laser light 62, which is guided through the first surface 71 and directed onto the outer circumferential region 31.

[0035] In particular, the level of light shielding in the first surface 71 is set so that it is greater than the level of light shielding in the second surface 72 using the mask 70, so that the irradiance of the laser light 62, which is passed through the second surface 72 and directed onto the central area 32, can be set so that it is greater than the irradiance of the laser light 62, which is passed through the first surface 71 and directed onto the outer circumferential area 31.

[0036] The technique for adjusting the irradiance of the laser light 62 directed onto the central region 32 so that it is greater than the irradiance of the laser light 62 directed onto the outer circumferential region 31 is not limited to the use of the mask 70. Examples include, for instance, forming a structural body comprising a variety of substructures such as protrusions and / or recesses (hereinafter also referred to simply as a "structural body") in the second surface 10b of the substrate 10. By forming the structural body, the laser light 62 propagating to the substrate 10 is scattered by the structural body; therefore, in comparison, if the structural body is not formed, the irradiance of the laser light 62 near the interface between the substrate 10 and the semiconductor layer 20 is lower. By adjusting the density, size, etc.The irradiation intensity of the laser light 62 can be adjusted near the interface between the substrate 10 and the semiconductor layer 20 of the substructures. In particular, as a first example, the density of the substructures in the part of the second surface 10b of the substrate 10 corresponding to the outer circumferential region 31 can be adjusted to be greater than the density of the substructures in the part of the second surface 10b of the substrate 10 corresponding to the central region 32. The density is the ratio of the area of ​​the structure body to the area of ​​the entire part corresponding to the outer circumferential region 31 or the central region 32.As a second example, the size of the substructures in the part of the second surface 10b of the substrate 10 that corresponds to the outer perimeter region 31 can be set so that it is larger than the size of the substructures in the part of the second surface 10b of the substrate 10 that corresponds to the central region 32. As a third example, the structural body can be formed only in the outer perimeter region 31 of the second surface 10b of the substrate 10.

[0037] When the substructures are formed, a flat surface can be provided between the adjacent substructures, or the substructures can be joined together without a flat surface. The shape of each substructure is, for example, a pyramid shape, such as a triangular pyramid or the like, a column shape, such as a four-sided pyramid or the like, a dome shape, such as a hemisphere, etc. If the semiconductor layer 20 is rectangular in plan view with dimensions of 1 mm × 1 mm, the maximum width of the structure body in plan view is, for example, not less than 1 µm and not more than 2 µm; and the height of the structure body is, for example, not less than 1 µm and not more than 2 µm. For example, the structure body is formed by etching the substrate 10. In such a case, the structure body is contained as a section of the substrate 10.When the substructures are formed, the size and / or height of each substructure can be the same or different. The structural body can have a rough surface.

[0038] As the semiconductor layer stacked on the substrate 10, the stacking body 30 can comprise several semiconductor layers 20 that are separated from each other. In the stacking body 30 of the in the Fig. 1 to Fig. In the example shown in Figure 9, six semiconductor layers 20 are arranged in a matrix configuration on a substrate 10. The six semiconductor layers 20 comprise three semiconductor layers 20 arranged in the X direction and two semiconductor layers 20 arranged in the Y direction. The stack body 30 comprises the outer circumferential region 31 and the central region 32, which correspond to each semiconductor layer 20.

[0039] In the separation process of the Fig. 1 to Fig. In example 9, irradiation with laser light 62 is carried out simultaneously on a region of the stacked body 30 that comprises the multiple semiconductor layers 20. As a result, the substrate 10 can be separated from the multiple semiconductor layers 20 simultaneously.

[0040] For example, when the semiconductor layer 20, which comprises gallium nitride, is irradiated with laser light 62, the gallium nitride present near the interface between the semiconductor layer 20 and the substrate 10 is decomposed by the laser light 62 into gallium metal and nitrogen gas. At this point, the nitrogen gas can be released to the outside because the opposite faces of adjacent semiconductor layers 20 are open to the outside. Accordingly, in comparison, if the semiconductor layers 20 are not separated from each other (i.e., if a semiconductor layer 20 is stacked on the substrate 10), the occurrence of expansion and / or cracking of the semiconductor layer 20 due to the nitrogen gas can be reduced.

[0041] In the Fig. 1 to Fig. In the example shown in Figure 9, the stack body 30 comprises the multiple semiconductor layers 20; and the irradiation with the laser light 62 is carried out simultaneously on the multiple semiconductor layers 20. However, the irradiation is not limited to this; and the irradiation with the laser light 62 can be carried out individually for each semiconductor layer 20. The stack body 30 is not limited to comprising the multiple semiconductor layers 20 and can also comprise only one semiconductor layer 20.

[0042] The substrate 10, the semiconductor layer 20 and the coating layer 25 contained in the stack body 30 will now be described. Substrat

[0043] Substrate 10 is an element on which semiconductor layer 20 is stacked. Substrate 10 is configured, for example, to conduct laser light 62. Substrate 10 comprises, for example, at least one layer of sapphire or glass. Substrate 10 has, for example, a flat plate shape. Semiconductor layer

[0044] Semiconductor layer 20, for example, comprises an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The light-emitting layer is positioned between the n-type and p-type semiconductor layers. The light-emitting layer can have a structure such as a double heterojunction, a single quantum well (SQW), etc., or it can have a structure consisting of a light-emitting layer group such as a multi-quantum well (MQW). The peak wavelength of light emission from the light-emitting layer can be selected appropriately for the purpose. For example, the light-emitting layer can be configured to emit visible light or ultraviolet light. The semiconductor stack body that includes such a light-emitting layer comprises, for example, all compositions of semiconductors with the chemical formula In x AlyGa 1-x-yN (0 ≤ x, 0 ≤ y and x + y ≤ 1), for which the composition ratios x and y are changed within the respective ranges.

[0045] Semiconductor layer 20 can have a structure comprising one or more light-emitting layers between the n-type semiconductor layer and the p-type semiconductor layer, or it can have a structure comprising an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, repeated multiple times in that order. If semiconductor layer 20 comprises multiple light-emitting layers, these layers can have different peak emission wavelengths, or they can have the same peak emission wavelength. The term "same peak emission wavelength" also includes cases where the difference is within ±10 nm.The combination of peak wavelengths of light emission between the multiple light-emitting layers can be suitably selected. For example, if semiconductor layer 20 comprises two light-emitting layers, the light-emitting layers can be selected in combinations of blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and ultraviolet light, blue light and green light, blue light and red light, green light and red light, and so on. Each light-emitting layer can comprise multiple active layers exhibiting different peak wavelengths of light emission, or multiple active layers exhibiting the same peak wavelength.

[0046] The semiconductor layer 20 is rectangular in a top view. It is advantageous if the length of one side of the semiconductor layer 20 in the top view is no less than 200 µm and no more than 2000 µm. Within this range, the occurrence of delamination defects, such as cracks in the semiconductor layer 20, can be further reduced, even if warping of the semiconductor layer 20 occurs. coating layer

[0047] The coating layer 25 is an element for holding the semiconductor layer 20. If the stacking body 30 encompasses the semiconductor layer 20 multiple times, the coating layer 25 can cover the side faces and the secondary surfaces 20b of the semiconductor layers 20 and can connect adjacent semiconductor layers 20. As a result, the coating layer 25 can hold the semiconductor layers 20 when the substrate 10 is separated from the semiconductor layers 20. For example, a polyimide resin can be used as the material of the coating layer 25. In the preparation process, the stacking body 30 can be arranged on a support body with the coating layer 25 positioned between them. In such a case, the coating layer 25 can also act as a connecting element, joining the support body and the semiconductor layer 20 of the stacking body 30.The support material can be used to reduce the distortion of the semiconductor layer 20 that occurs when the substrate 10 is separated from the semiconductor layer 20. For example, sapphire can be used as the support material. laser light

[0048] The laser light irradiation device 60 can use a gas laser or a solid-state laser. For example, an excimer laser can be used as the gas laser. For example, the laser light irradiation device 60 emits pulsed laser light 62. In such a case, the pulse width is, for example, 20 ns. The peak emission wavelength of the laser light 62 is, for example, 248 nm. For example, the laser light 62 can be emitted by the laser light irradiation device 60 and can reach the mask 70 by passing through a lens 81. A top-hat laser beam, in which the irradiation intensity distribution of the laser light is essentially uniform, can be used as the laser light 62. support process

[0049] The method for manufacturing the light-emitting device according to the embodiment may further include a support process. The support process is carried out after the separation process.

[0050] In the support process, as in Fig. As shown in Figure 5, a transparent layer 82 is arranged on the surface (i.e., the first surface 20a) of the semiconductor layer 20 on the side from which the substrate 10 has been separated. The transparent layer 82 comprises, for example, a fluorescent material. The transparent layer 82 is arranged, for example, on the first surface 20a of the semiconductor layer, with the connecting element positioned between them. The transparent layer 82 has, for example, a flat plate shape. Removal process

[0051] The method for manufacturing the light-emitting device according to the embodiment may further include a removal process. The removal process is carried out after the support process.

[0052] As in Fig. As shown in Figure 6, the coating layer 25 is removed during the removal process. As a result, the electrode 21, which is located on the side of the second surface 20b of each semiconductor layer 20, is exposed. Cutting process

[0053] The method for manufacturing the light-emitting device according to the embodiment may further include a cutting process. The cutting process is carried out after the removal process.

[0054] As in Fig. As shown in Figure 7, the transparent layer 82 is cut during the cutting process. When cutting the transparent layer 82, any position between the adjacent semiconductor layers 20 can be cut. For example, the midpoint between the adjacent semiconductor layers 20 can be cut. Several semiconductor layers 20, each bearing the transparent layer 82, can be obtained by cutting the transparent layer 82. fastening process

[0055] The method for manufacturing the light-emitting device according to the embodiment may further include a fastening process. The fastening process is carried out at least after the separation process. For example, the fastening process is carried out after the cutting process.

[0056] During the fastening process, as in Fig. As shown in Figure 8, the semiconductor layer 20 is attached such that the surface (i.e., the second surface 20b) on the side opposite the surface (i.e., the first surface 20a) of the semiconductor layer 20, which has been separated from the substrate 10, faces an upper surface 40a of a circuit substrate 40. At this point, a conductive element can be arranged between the electrode 21 and the circuit substrate 40 to electrically connect the circuit substrate 40 and the electrode 21, which is located on the second surface 20b of the semiconductor layer 20. A light-emitting device 50 is produced by attaching the semiconductor layer 20, separated from the substrate 10, to the circuit substrate 40. In the case shown in Figure 8, the semiconductor layer 20 is attached to the circuit substrate 40. Fig. In the fastening process shown in Figure 8, the semiconductor layer 20, on which the transparent layer 82 is arranged, is attached to the circuit substrate 40. In the process shown in Fig. In the example shown in Figure 8, a semiconductor layer 20 is attached to the circuit substrate 40. However, the configuration is not limited to this; multiple semiconductor layers 20 can be attached to the circuit substrate 40. The circuit substrate 40 comprises the upper surface 40a and a lower surface 40b. Ordering process

[0057] The method for manufacturing the light-emitting device according to the embodiment may further include an assembly process. The assembly process is carried out after the fastening process.

[0058] In the ordering process, as in Fig. As shown in Figure 9, a light-reflecting element 83 is arranged to cover the lateral surfaces of the translucent layer 82 and the lateral surface areas of the semiconductor layer 20. The light-reflecting element 83 can be configured to comprise an organic material, an inorganic material, or both. A resin can be used as the organic material. For example, a mixture comprising silicon dioxide, boron nitride, and an alkali metal can be used as the inorganic material. Circuit substrate

[0059] The circuit substrate 40, for example, comprises a base element and a circuit component located on the base element. The circuit substrate 40 has, for example, a flat plate shape.

[0060] Mask 70 will now be described in detail.

[0061] Fig. Figure 10 is a schematic top view showing a mask used in the method for manufacturing the light-emitting device according to the embodiment.

[0062] Fig. Figure 11 is a schematic enlarged top view showing a section of the mask used in the method for manufacturing the light-emitting device according to the embodiment.

[0063] Fig. Figure 12 is an enlarged schematic cross-sectional representation showing a section of the mask used in the method for manufacturing the light-emitting device according to the embodiment.

[0064] Part of the mask, which is in Fig. As shown in 10, is in Fig. 11 enlarged. Fig. Figure 12 schematically represents a cross-sectional view along line XII-XII, which is in Fig. 11 is shown.

[0065] The mask 70 comprises the plurality of first surfaces 71 corresponding to the outer perimeter regions 31 of the stacked body 30, and the plurality of second surfaces 72 corresponding to the central regions 32 of the stacked body 30. The first surface 71 and the corresponding second surface 72 are subdivided by a boundary BD2, which is a virtual line. The mask 70 includes one or more first light-shielding structures 76 positioned in each first surface 71 that shield the laser light 62. In the Fig. 10 to Fig. In the example shown in Figure 12, the mask 70 comprises several first light-shielding structures 76 positioned in each first surface 71 that shield the laser light 62, and several second light-shielding structures 77 positioned in each second surface 72 that shield the laser light 62. Even when a mask is used that includes both the first and second light-shielding structures 76 and 77, the irradiation with the laser light 62 occurs in the outer circumferential regions 31 and the central regions 32 that are positioned directly below the first light-shielding structures 76 and the second light-shielding structures 77. This is because the light passing between adjacent first light-shielding structures 76 and adjacent second light-shielding structures 77 can propagate to the regions positioned directly below them.If the first light-shielding structures 76 and the second light-shielding structures do not completely shield the laser light 62, the irradiation with the laser light 62 is also carried out on the areas that are positioned directly below the first and second light-shielding structures 76 and 77 by passing through the first and second light-shielding structures 76 and 77.

[0066] In the Fig. 10 to Fig. In the example shown in Figure 12, the outer shape of the first surface 71 is rectangular in a plan view. Similarly, the outer shape of the second surface 72 (i.e., the outer shape defined by the boundary BD2, which is a virtual line) is rectangular. The outer shape of the first surface 71 corresponds to the outer shape of the outer perimeter region 31. The outer shape of the second surface 72 corresponds to the outer shape of the central region 32. In other words, the outer shape defined by the boundary BD2, which is a virtual line, corresponds to the outer shape defined by the boundary BD1, which is a virtual line.

[0067] The outer shape of the second surface 72 is not limited to a rectangle and can, for example, be a shape in which the four corners of the rectangle are cut out. The outer shapes of the first and second surfaces 71 and 72 are not limited to rectangles and can be polygonal other than rectangular or circular. The corners of the polygon may or may not be cut out. The sides of the polygon can be straight lines or curves. The outer shape of the first surface 71 can be the same as the outer shape of the second surface 72 or different from it. This is similar for the outer shape of a third surface 73, which is described below.

[0068] In the Fig. 10 to Fig. In the example shown, the first light-shielding structures 76 and the second light-shielding structures 77 are each arranged regularly in a matrix configuration along the X and Y directions in a top view. The first light-shielding structures 76 and the second light-shielding structures 77 can be arranged in an offset configuration in the top view. The arrangement of the first light-shielding structures 76 can be the same as the arrangement of the second light-shielding structures 77 or different from it.

[0069] In the Fig. 10 to Fig. In the example shown, the first light-shielding structure 76 and the second light-shielding structure 77 have the same size (e.g., the same footprint) in plan view. That is, a width W1 of the first light-shielding structure 76 in plan view is equal to a width W2 of the second light-shielding structure 77 in plan view; and the area of ​​the first light-shielding structure 76 in plan view is the same as the area of ​​the second light-shielding structure 77 in plan view.

[0070] As in Fig. As shown in Figure 11, the widths W1 and W2 are the maximum widths in the X direction. It is advantageous if the widths W1 and W2 are, for example, no less than 1 µm and no more than 3 µm. It is also advantageous if the widths W1 and W2 are, for example, no less than 1 / 400 and no more than 1 / 100 times the outer shape of the semiconductor layer 20.

[0071] As long as the irradiance of the laser light 62 in the central region 32 can be adjusted to be greater than the irradiance of the laser light 62 in the outer circumferential region 31 around it, the first light-shielding structure 76 and the second light-shielding structure 77 are not limited to having the same size in plan view and can have different sizes in plan view. For example, the first light-shielding structure 76 can be larger or smaller than the second light-shielding structure 77 in plan view.

[0072] In the Fig. 10 to Fig. In the example shown, the first light-shielding structure 76 and the second light-shielding structure 77 are circular in plan view. The shapes of the first and second light-shielding structures 76 and 77 in plan view are not limited to circular and can be rectangular, etc. The first light-shielding structure 76 and the second light-shielding structure 77 can have the same shape or different shapes in plan view.

[0073] In the Fig. 10 to Fig. In the example shown, the first light-shielding structures 76 are arranged at a uniform distance in the X-direction. That is, a distance D1x in the X-direction of the first light-shielding structures 76 is constant. In the Fig. 10 to Fig. In the example shown, the first light-shielding structures 76 are arranged at a uniform distance in the Y-direction. That is, a distance D1y in the Y-direction of the first light-shielding structures 76 is constant. In the Fig. 10 to Fig. In the example shown in Figure 12, the distance D1x is the same as the distance D1y. If the distance D1x and the distance D1y are constant, a non-uniformity of the irradiance in the outer circumferential region 31 can be reduced. The distance D1x cannot be constant. The distance D1y cannot be constant. The distance D1x can differ from the distance D1y. For example, the mean of the distances D1x and D1y is taken as a distance D1 between the adjacent first light-shielding structures 76. Here, "distance" refers to the distance between the centers of the adjacent first light-shielding structures 76. The distance D1 is, for example, not less than 4 µm and not more than 6 µm. The distance D1 is, for example, not less than 1 / 300 and not more than 1 / 200 times the outer shape of the semiconductor layer 20.

[0074] In the Fig. 10 to Fig. In the example shown in Figure 12, the second light-shielding structures 77 are arranged at a uniform distance in the X-direction. That is, a distance D2x in the X-direction of the second light-shielding structures 77 is constant. In the example shown in the Fig. 10 to Fig. In the example shown in Figure 12, the second light-shielding structures 77 are arranged at a uniform distance in the Y-direction. That is, a distance D2y in the Y-direction of the second light-shielding structures 77 is constant. In the Fig. 10 to Fig. In the example shown, the distance D2x is the same as the distance D2y. If the distance D2x and the distance D2y are constant, a non-uniformity of the irradiance in the central region 32 can be reduced. The distance D2x cannot be constant. The distance D2y cannot be constant. The distance D2x can differ from the distance D2y. For example, the mean of the distances D2x and D2y is taken as a distance D2 of the adjacent second light-shielding structures 77. Here, "distance" refers to the distance between the centers of the adjacent second light-shielding structures 77. The distance D2 is, for example, not less than 6 µm and not more than 10 µm. The distance D2 is, for example, not less than 1 / 200th and not more than 1 / 100th of the outer shape of the semiconductor layer 20.

[0075] In the Fig. In the example shown in 10 to 12, the distance D2 is greater than the distance D1. In the example shown in the Fig. 10 to Fig. In the example shown in Figure 12, the density of the second light-shielding structures 77 in the second area 72 is smaller than the density of the first light-shielding structures 76 in the first area 71. Density is the ratio of the area of ​​the light-shielding structures to the area of ​​each total region. As a result, the level of light shielding in the first area 71 can be adjusted to be greater than the level of light shielding in the second area 72; and the irradiance of the laser light 62, which is passed through the second area 72 and directed onto the central region 32, can be adjusted to be greater than the irradiance of the laser light 62, which is passed through the first area 71 and directed onto the outer circumferential region 31.

[0076] In the Fig. 10 to Fig. In the example shown in Figure 12, the mask 70 comprises a translucent element 75 and the first light-shielding structures 76 and the second light-shielding structures 77 arranged on the translucent element 75. The translucent element 75 comprises a first surface 75a facing the stacking body 30 and a second surface 75b positioned on the side opposite the first surface 75a. The first light-shielding structures 76 can be arranged in at least the first surface 75a or the second surface 75b. The second light-shielding structures 77 can be arranged in at least the first surface 75a or the second surface 75b. In the example shown in the Fig. 10 to Fig. In the example shown, the first light-shielding structures 76 and the second light-shielding structures 77 are arranged on the first surface 75a. As a result, the light that has passed between the adjacent first light-shielding structures 76 and between the adjacent second light-shielding structures 77 does not pass through the light-transmitting element 75, so that, in comparison, when the first light-shielding structures 76 and the second light-shielding structures 77 are arranged on the second surface 75b, the light is easily emitted in the desired direction.

[0077] In the Fig. In the example shown in Figure 10, the mask 70 comprises an inner light-shielding part 710, which includes the first and second light-shielding structures 76 and 77, and an outer light-shielding part 720, which includes an opening 74. The inner light-shielding part 710 is arranged within the opening 74. Under the laser light emitted by the laser light irradiation device 60, the mask 70 shields the laser light directed onto the outer light-shielding part 720 and the light directed onto the inner light-shielding part 710.If the laser light has a top-hat irradiance distribution, the irradiance distribution includes a region at the center where the irradiance is essentially uniform (hereinafter also referred to as "region A") and regions at the two end sections that have lower irradiances than the center (hereinafter also referred to as "region B"). By irradiating region A within aperture 74 of mask 70 with the laser light (i.e., by not irradiating region B within aperture 74 of mask 70 with the laser light), the irradiance within aperture 74 of mask 70 can be made essentially uniform. As a result, any unevenness in the irradiance within aperture 74 can be reduced.

[0078] The transmittance of the outer light-shielding part 720 of the mask 70 with respect to the laser light is, for example, 0%. As a result, the light emitted by the laser light irradiation device 60 can be completely shielded by the outer light-shielding part 720 of the mask 70 and can only be guided within the opening 74.

[0079] In the mask 70, similarly to the area inside the opening 74, the area outside the opening 74 can comprise the light-transmitting element 75 and the outer light-shielding part 720 on the first surface 75a and / or the second surface 75b of the light-transmitting element 75. The outer light-shielding part 720 can be made of the same material as the first and second light-shielding structures 76 and 77, or it can be made of a different material.

[0080] The mask 70 is not limited to using the translucent element 75 as a base element and providing the first and second light-blocking structures 76 and 77 on the translucent element 75; a light-blocking element can be used as a base element, and translucent structures, such as holes, etc., can be provided in the light-blocking element. In such a case, the light-blocking element corresponds to the first and second light-blocking structures. Translucent element

[0081] The translucent element 75 is an element that supports the first light-shielding structures 76 and the second light-shielding structures 77. The translucent element 75 is configured to conduct the laser light 62. It is sufficient that the translucent element 75 is able to conduct at least a portion of the laser light 62. The transmittance of the translucent element 75 for the laser light 62 is, for example, 90%. The translucent element 75 can, for example, comprise glass. The translucent element 75 has, for example, a flat plate shape. First light-shielding structure and second light-shielding structure

[0082] The first light-shielding structure 76 and the second light-shielding structure 77 are configured to shield the laser light 62. The first light-shielding structure 76 and the second light-shielding structure 77 can shield at least a portion of the laser light 62. If the light-transmitting element 75 includes the first light-shielding structures 76 and the second light-shielding structures 77, the transmittances of the first and second light-shielding structures 76 and 77 for the laser light 62 are lower than the transmittance of the light-transmitting element 75 for the laser light 62. If light-transmitting structures, such as holes, etc., are provided in the light-shielding element, the transmittances of the first and second light-shielding structures 76 and 77 for the laser light 62 are lower than the transmittance of the light-transmitting structure (e.g., ambient air) for the laser light 62.The transmittances of the first and second light-shielding structures 76 and 77 for the laser light 62 are, for example, 50%. The first light-shielding structure 76 and the second light-shielding structure 77 can be metal foils made of chromium, etc., or can be dielectric multilayer films.

[0083] In the Fig. 10 to Fig. In the example shown in Figure 12, the transmittance of the first light-shielding structure 76 for the laser light 62 is the same as the transmittance of the second light-shielding structure 77 for the laser light 62. The transmittance of the second light-shielding structure 77 for the laser light 62 can be greater than the transmittance of the first light-shielding structure 76 for the laser light 62. For example, the first light-shielding structure 76 is formed using a material that has a first transmittance for the laser light 62; and the second light-shielding structure 77 is formed using a material that has a second transmittance for the laser light 62 that is greater than the first transmittance.The transmittance of the second light-shielding structure 77 for the laser light 62 can be adjusted to be greater than the transmittance of the first light-shielding structure 76 for the laser light 62 by forming the first light-shielding structure 76 with a first thickness and by forming the second light-shielding structure 77 with a second thickness that is less than the first thickness. The transmittance of the second light-shielding structure 77 for the laser light 62 can be adjusted to be greater than the transmittance of the first light-shielding structure 76 for the laser light 62 by combining the materials and thicknesses described above.

[0084] The transmittance of the second light-shielding structure 77 for the laser light 62 can be lower than the transmittance of the first light-shielding structure 76 for the laser light 62. For example, the density of the second light-shielding structures 77 in the second area 72 can be sufficiently lower than the density of the first light-shielding structures 76 in the first area 71. As a result, even if the transmittance of the second light-shielding structure 77 for the laser light 62 is lower than the transmittance of the first light-shielding structure 76 for the laser light 62, the level of light shielding in the first area 71 can be greater than the level of light shielding in the second area 72.

[0085] In the Fig. 10 to Fig. In the example shown in Figure 12, the second light-shielding structures 77 are arranged in the second surface 72. However, the second surface 72 is not limited to this; the second light-shielding structures 77 can also be provided without being provided in the second surface 72. If the second light-shielding structures 77 are not provided in the second surface 72, the portion of the mask in the second surface 72 can only comprise the translucent element 75 or include holes extending through the translucent element 75.

[0086] Fig. Figure 13 is a schematic top view showing a stacked body processed in a method for manufacturing a light-emitting device according to a modification of the embodiment.

[0087] Fig. Figure 14 is a schematic top view showing a mask used in the method for manufacturing the light-emitting device according to the modification of the embodiment.

[0088] Fig. Figure 15 is a schematic enlarged top view showing a section of the mask used in the method for manufacturing the light-emitting device according to the modification of the embodiment.

[0089] Part of the mask, which is in Fig. As shown in 14, is in Fig. 15 times larger.

[0090] As in Fig. As shown in Figure 13, the stacked body 30 can further comprise a plurality of intermediate regions 33, each of which is positioned between the corresponding central region 32 and the corresponding outer perimeter region 31 in the plan view. Hereinafter, the intermediate region 33 can be referred to as a third region. The intermediate region 33 is positioned further inward than the corresponding outer perimeter region 31. The intermediate region 33 is positioned further outward than the corresponding central region 32. The outer perimeter region 31 and the corresponding intermediate region 33 are subdivided by a boundary BD3, which is a virtual line. The intermediate region 33 and the corresponding central region 32 are subdivided by a boundary BD4, which is a virtual line.

[0091] In the Fig. In the example shown in Figure 13, the outer shape of the outer perimeter region 31 is rectangular in plan view. Similarly, the outer shape of the intermediate region 33 (i.e., the outer shape defined by boundary BD3, which is a virtual line) and the outer shape of the central region (i.e., the outer shape defined by boundary BD4, which is a virtual line) are rectangular. For example, boundary BD3 and boundary BD4 are positioned such that they divide the area between the outer perimeter boundary 31e of the outer perimeter region 31 and the center point 32c of the central region 32 into three parts. That is, for example, a distance L3 between boundary BD3 and the outer perimeter boundary 31e of the outer perimeter region 31, a distance L4 between boundary BD3 and boundary BD4, and a distance L5 between boundary BD4 and the center point 32c of the central region 32 are equal. The distance L3, the distance L4 and the distance L5 can be different from each other.The distance L3 can be smaller than the distance L4 or larger than the distance L4. The distance L3 can be smaller than the distance L5 or larger than the distance L5. The distance L4 can be smaller than the distance L5 or larger than the distance L5.

[0092] As in the Fig. 14 and Fig. As shown in Figure 15, the mask 70 can further comprise a plurality of third surfaces 73, corresponding to the intermediate areas 33 in the plan views. The first surface 71 and the corresponding third surface 73 are subdivided by a boundary BD5, which is a virtual line. The second surface 72 and the corresponding third surface 73 are subdivided by a boundary BD6, which is a virtual line. The third area 73 is located within the mask 70 to overlap the intermediate area 33 in a plan view.

[0093] In the Fig. 14 and Fig. In the example shown in Figure 15, the outer shape of the first surface 71 is rectangular. Similarly, the outer shape of the second surface 72 (i.e., the outer shape defined by the boundary BD5, which is a virtual line) and the outer shape of the third surface (i.e., the outer shape defined by the boundary BD6, which is a virtual line) are rectangular.

[0094] In the Fig. In the example shown in Figure 14, the mask 70 comprises the inner light-shielding part 710, which includes the first light-shielding structures 76, the second light-shielding structures 77, and a plurality of third light-shielding structures 78, and the outer light-shielding part 720, which includes the aperture 74. The inner light-shielding part 710 is arranged within the aperture 74.

[0095] In the Fig. 13 to Fig. In the example shown in Figure 15, irradiation with laser light 62 is carried out with the same irradiation intensity on the first to third surfaces 71 to 73 in the separation process. The irradiation intensity of the laser light 62, which is guided through the second surface 72 and directed onto the central region 32, is set so that it is greater than the irradiation intensity of the laser light 62, which is guided through the third surface 73 and directed onto the intermediate region 33; and the irradiation intensity of the laser light 62, which is guided through the third surface 73 and directed onto the intermediate region 33, is set so that it is greater than the irradiation intensity of the laser light 62, which is guided through the first surface 71 and directed onto the outer circumferential region 31.

[0096] In particular, using the mask 70, the irradiance of the laser light 62, which is passed through the second surface 72 and directed onto the central area 32, can be adjusted to be greater than the irradiance of the laser light 62, which is passed through the third surface 73 and directed onto the intermediate area 33, by adjusting the level of light shielding in the third surface 73 to be greater than the level of light shielding in the second surface 72.The irradiance of the laser light 62, which is guided through the third surface 73 and directed onto the intermediate region 33, can be adjusted to be greater than the irradiance of the laser light 62, which is guided through the first surface 71 and directed onto the outer circumferential region 31, by adjusting the level of light shielding in the first surface 71 to be greater than the level of light shielding in the third surface 73. As a result, the occurrence of delamination defects, such as cracks in the semiconductor layer 20, can be reduced.

[0097] The mask 70 comprises the several third light-shielding structures 78, which are positioned in the third surface 73 and shield the laser light 62. Examples of the arrangement, size, and shape of the third light-shielding structures 78 may be the same as the examples of the arrangements, sizes, and shapes of the first light-shielding structures 76 and the second light-shielding structures 77 described above; and a description is therefore omitted.

[0098] In the Fig. 13 to Fig. In the example shown in 15, the distance D3 between the adjacent third light-shielding structures 78 is greater than the distance D1 and less than the distance D2. In the example shown in the Fig. 13 to Fig. In the example shown in Figure 15, the density of the third light-shielding structures 78 in the third surface 73 is smaller than the density of the first light-shielding structures 76 in the first surface 71 and larger than the density of the second light-shielding structures 77 in the second surface 72. As a result, the level of light shielding in the third surface 73 can be adjusted to be greater than the level of light shielding in the second surface 72; and the irradiance of the laser light 62, which is passed through the second surface 72 and directed onto the central region 32, can be adjusted to be greater than the irradiance of the laser light 62, which is passed through the third surface 73 and directed onto the intermediate region 33.The level of light shielding in the first surface 71 can be adjusted to be greater than the level of light shielding in the third surface 73; and the irradiance of the laser light 62, which is passed through the third surface 73 and directed onto the intermediate area 33, can be adjusted to be greater than the irradiance of the laser light 62, which is passed through the first surface 71 and directed onto the outer circumferential area 31.

[0099] Fig. Figure 16 is a schematic enlarged top view showing a section of a mask used in a method for manufacturing a light-emitting device according to another modification of the embodiment.

[0100] In the Fig. In the example shown in Figure 16, the distance D2 of the adjacent second light-shielding structures 77 is the same as the distance D1 of the adjacent first light-shielding structures 76.

[0101] In the Fig. In the example shown in Figure 16, the transmittance of the second light-shielding structure 77 for the laser light 62 is greater than the transmittance of the first light-shielding structure 76 for the laser light 62. As described above, the transmittance of the second light-shielding structure 77 for the laser light 62 can, for example, be adjusted to be greater than the transmittance of the first light-shielding structure 76 for the laser light 62 by adjusting the materials and / or thicknesses.

[0102] By adjusting the transmittance of the second light-shielding structure 77 for the laser light 62 to be greater than the transmittance of the first light-shielding structure 76 for the laser light 62, the level of light shielding in the first surface 71 can be adjusted to be greater than the level of light shielding in the second surface 72, even if the spacing D2 of the adjacent second light-shielding structures 77 is the same as the spacing D1 of the adjacent first light-shielding structures 76. As a result, the irradiance of the laser light 62, which is guided through the second surface 72 and directed onto the central region 32, can be adjusted to be greater than the irradiance of the laser light 62, which is guided through the first surface 71 and directed onto the outer circumferential region 31.

[0103] Fig. Figure 17 is a schematic enlarged top view showing a section of a mask used in a method for manufacturing a light-emitting device according to another modification of the embodiment.

[0104] As in Fig. As shown in Figure 17, the first surface 71 of the mask can comprise 70 corner surfaces 71a (which can be referred to as fourth surfaces), which comprise the corners 71x, and side surfaces 71b, each positioned between two corner surfaces 71a. The corner surfaces 71a are areas subdivided by virtual lines formed by extending the boundary lines between the first surface 71 and the second surface 72.

[0105] In the Fig. In the example shown in 17, corner-side light-shielding structures 76a are arranged in the corner surfaces 71a; and side-surface light-shielding structures 76b are arranged in the side surface 71b. In the Fig. In the example shown in Figure 17, the corner-side light-shielding structures 76a are arranged at a uniform distance (a distance D1ax) in the X-direction and at a uniform distance (a distance D1ay) in the Y-direction. For example, the mean of the distances D1ax and D1ay is taken as a distance D1a between the adjacent corner-side light-shielding structures 76a. ... Fig. In the example shown in Figure 17, the side-surface light-shielding structures 76b are arranged at a uniform distance (a distance D1bx) in the X-direction and at a uniform distance (a distance D1by) in the Y-direction. For example, the average of the distances D1bx and D1by is taken as a distance D1b between the adjacent side-surface light-shielding structures 76b.

[0106] In the Fig. In example 17, the distance D1a is smaller than the distance D1b. In the example shown in Fig. In the example shown in Figure 17, the density of the corner-side light-shielding structures 76a in the corner faces 71a is greater than the density of the side-face-side light-shielding structures 76b in the side faces 71b. As a result, the level of light shielding in the corner faces 71a can be adjusted to be greater than the level of light shielding in the side faces 71b; and the irradiance of the laser light 62 at the positions corresponding to the corner faces 71a of the stack body 30 can be adjusted to be less than the irradiance of the laser light 62 at the positions corresponding to the side faces 71b of the stack body 30. As a result, the time discrepancy between the separation of the outer circumferential region 31 and the separation of the central region can be reduced, and the occurrence of delamination defects, such as cracks in the semiconductor layer 20, can be reduced.

[0107] In the Fig. In example 17, the distance D1b is smaller than the distance D2. In the example shown in Fig. In the example shown in Figure 17, the density of the side-face light-shielding structures 76b in the side faces 71b is, for example, greater than the density of the second light-shielding structures 77 in the second face 72. As a result, the level of light shielding in the side faces 71b can be greater than the level of light shielding in the second face 72; and the irradiance of the laser light 62 at the positions corresponding to the side faces 71b of the stack body 30 can be adjusted to be lower than the irradiance of the laser light 62 at the positions corresponding to the central region 32. As a result, the time discrepancy between the separation of the outer circumferential region 31 and the separation of the central region can be reduced, and the occurrence of delamination defects, such as cracks in the semiconductor layer 20, can be reduced.

[0108] In the example above, the density of the light-shielding structure in mask 70 decreases in steps for each region from the outer circumference to the center of mask 70. The change in density of the light-shielding structure in mask 70 can have two, three, or more steps. The occurrence of delamination defects can be reduced as the number of steps increases. The density of the light-shielding structure in mask 70 can decrease continuously from the outer circumference to the center of mask 70. Separation process

[0109] The separation process according to the embodiment comprises the preparation process and the separation process according to the method described above for manufacturing the light-emitting device.

[0110] In particular, in the separation method according to the embodiment, the substrate 10 is separated from the semiconductor layer 20 of the stacking body 30 by irradiation with the laser light 62, wherein the stacking body 30 comprises the substrate 10 and the semiconductor layer 20 stacked on the substrate 10, and the stacking body 30 comprises the outer circumferential region 31 and the central region 32, which is positioned within the outer circumferential region 31 in a top view. In such a case, the irradiation with the laser light 62 is carried out simultaneously on the central region 32 and the outer circumferential region 31. The irradiation intensity of the laser light 62 in the central region 32 is set to be greater than the irradiation intensity of the laser light 62 in the outer circumferential region 31.

[0111] The separation process according to the embodiment is applicable to the preparation process and the separation process according to the method for manufacturing the light-emitting device described in the Fig. 1 to Fig. 4 and the Fig. 10 to Fig. 16 is shown above.

[0112] By adjusting the irradiance of the laser light 62 in the central region 32 so that it is greater than the irradiance of the laser light 62 in the outer circumferential region 31, the time difference between the separation of the outer circumferential region 31 and the separation of the central region 32 can be reduced. As a result, the occurrence of delamination defects, such as cracks in the semiconductor layer 20, can be reduced. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2023-122673

[0001] JP 2013-42191

[0003]

Claims

[1] A method of manufacturing a light-emitting device, comprising: Preparing a stacked body comprising a substrate and a semiconductor layer on the substrate; and Separating the substrate from the semiconductor layer by irradiating the stack body with a laser light, wherein a first region of the stacked body corresponding to an outer peripheral region of the semiconductor layer and a second region of the stacked body corresponding to a central region of the semiconductor layer are simultaneously irradiated with the laser light during the separation, wherein an irradiation intensity of the laser light in the second region of the stack body is greater than an irradiation intensity of the laser light in the first region of the stack body. [2] The method according to claim 1, wherein The separation includes: Arranging a mask which is light-transmissive and comprises a first surface and a second surface on a side of the stack body onto which the laser light is incident, wherein the first surface corresponds to the first region of the stack body and the second surface corresponds to the second region of the stack body; and Irradiating the first surface and the second surface of the mask with the laser light with an equal irradiation intensity. [3] The method of claim 2, wherein the mask comprises one or more first light-shielding structures in the first area. [4] The method of claim 2, wherein the mask comprises a plurality of first light-shielding structures in the first area and a plurality of second light-shielding structures in the second area. [5] Method according to claim 4, wherein the plurality of first light-shielding structures are regularly arranged in one direction in the first surface of the mask and the plurality of second light-shielding structures are regularly arranged in the direction in the second surface of the mask, each of the plurality of first light-shielding structures and each of the plurality of second light-shielding structures have an equal base area, and a distance between centers of adjacent two of the plurality of second light-shielding structures in the direction is greater than a distance between adjacent two of the plurality of first light-shielding structures in the direction. [6] Method according to claim 4, wherein the mask comprises a light-transmitting element having a first surface positioned to face the stack body during assembly and a second surface opposite the first surface, and the plurality of first light-shielding structures and the plurality of second light-shielding structures are arranged on the first surface. [7] Method according to one of claims 1 to 6, wherein the stacked body comprises a plurality of semiconductor layers provided on the substrate and separated from each other, wherein the plurality of semiconductor layers comprises the semiconductor layer, and during the separation, a region of the stacked body corresponding to the plurality of semiconductor layers and comprising the first and second regions is irradiated to separate the plurality of semiconductor layers from the substrate. [8] Method according to one of claims 1 to 6, wherein during the separation, a third region of the stacked body between the first region and the second region of the stacked body is irradiated with the laser light simultaneously with the first and the second region, and an irradiation intensity of the laser light in the third region is greater than the irradiation intensity of the laser light in the first region and smaller than the irradiation intensity of the laser light in the second region. [9] Method according to claim 8, wherein The separation includes: Arranging a mask which is transparent to light and comprises a first surface, a second surface and a third surface on a side of the stacked body onto which the laser light is incident, wherein the first, second and third surfaces correspond to the first, second and third regions of the stacked body, respectively; and Irradiating the first, second and third surfaces of the mask with the laser light at the same irradiation intensity. [10] Method according to claim 9, wherein the mask comprises a plurality of first light-shielding structures in the first area, a plurality of second light-shielding structures in the second area, and a plurality of third light-shielding structures in the third area, and a density of the third light-shielding structures in the third area of ​​the mask is greater than a density of the second light-shielding structures in the second area of ​​the mask and smaller than a density of the first light-shielding structures in the first area of ​​the mask. [11] Method according to one of claims 1 to 10, further comprising: after separating, attaching the semiconductor layer to a circuit substrate such that a surface of the semiconductor layer opposite to a surface of the semiconductor layer separated from the substrate faces an upper surface of the circuit substrate. [12] A separation method for a stacked body comprising a substrate and a semiconductor layer on the substrate, comprising: Separating the substrate from the semiconductor layer by irradiating the stack body with a laser light, wherein a first region of the stacked body corresponding to an outer peripheral region of the semiconductor layer and a second region of the stacked body corresponding to a central region of the semiconductor layer are simultaneously irradiated with the laser light during the separation, wherein an irradiation intensity of the laser light in the second region of the stack body is greater than an irradiation intensity of the laser light in the first region of the stack body.

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