DISPLAY DEVICE

Abstract

A display device (100, 200, 300, 400, 500) may comprise: a substrate (110) comprising: a non-display region (NA2) having a through-hole (TH) and a display region (AA) surrounding the non-display region (NA2), a dam (DAM) surrounding the through-hole, a first hydrogen barrier layer (191) surrounding the dam (DAM), a first planarization layer (125) disposed on the first hydrogen barrier layer (191), a second hydrogen barrier layer (195, 295, 395) surrounding the dam (DAM), wherein the second hydrogen barrier layer (195, 295, 395) is disposed on the first planarization layer (125) and overlaps with at least a portion of the first hydrogen barrier layer (191), and a first contact hole (C1, C1') in the first planarization layer (125), wherein the first contact hole (C1, C1') surrounds the dam (DAM).In addition, the first hydrogen barrier layer (191) is in contact with the second hydrogen barrier layer (195, 295, 395) via the first contact hole (C1, C1').

Description

Cross-reference to related applications

[0001] This application claims priority to Korean Patent Application No. 10-2024-0019569, filed on February 8, 2024, in the Republic of Korea. BACKGROUNDTechnical field

[0002] The present disclosure relates to a display device, and more particularly to a display device capable of blocking hydrogen flowing into a transistor. Discussion of related technology

[0003] With the development of the information society, the demand for display devices that display images is increasing. The display device can be used in various types of devices such as televisions, monitors, tablet computers, navigation devices, game consoles, and mobile phones. Various types of display devices are used, such as liquid crystal displays (LCDs) and organic light-emitting displays (OLEDs).

[0004] The display device is equipped with optical components such as cameras and proximity sensors to provide users with more diverse functions. To detect light, optical components such as cameras are exposed to the outside. The display device has a notch or holes formed in a display area (e.g., hole in active area (HIAA)) to expose the optical components. However, the holes formed in a display area may cause hydrogen gas to leak into the transistor, making it more conductive and damaging it. The degraded transistor may cause high-brightness defects such as bright spots and abnormal light emission in the display device. Therefore, there is a need for a display device that can block hydrogen flowing into the transistor, improve manufacturing yield, and enhance the quality of the display device. OVERVIEW OF REVELATION

[0005] An object of the present disclosure is to provide a display device capable of preventing a transistor from becoming a conductor by blocking a hydrogen inflow path into the transistor.

[0006] Another object of the present disclosure is to provide a display device capable of minimizing a decrease in reliability due to high-brightness defects such as strong bright spots and abnormal light emission.

[0007] The objects of the present disclosure are not limited to the above-mentioned objects, and other objects not mentioned above can be clearly understood by those skilled in the art from the following descriptions. According to one aspect of the present disclosure, a display device according to claim 1 is provided. According to another aspect of the present disclosure, a display device according to claim 16 is provided. Further embodiments are described in the dependent claims.

[0008] According to one aspect of the present disclosure, a display device comprises: a substrate having: a non-display region having a via hole and a display region surrounding the non-display region, a dam surrounding the via hole, a first hydrogen barrier layer surrounding the dam, a first planarization layer on the first hydrogen barrier layer, a second hydrogen barrier layer surrounding the dam on the first planarization layer and overlapping with at least a portion of the first hydrogen barrier layer, and a first contact hole surrounding the dam on the first planarization layer, wherein the first hydrogen barrier layer is in contact with the second hydrogen barrier layer in the first contact hole.

[0009] According to the present disclosure, by disposing a hydrogen barrier layer surrounding the planarization layer exposed through the through-hole, it is possible to suppress the intrusion of hydrogen diffusing from the through-hole or the encapsulation part.

[0010] According to the present disclosure, it is possible to improve the reliability of the display device by preventing the oxide semiconductor layer from becoming a conductor due to hydrogen.

[0011] According to the present disclosure, it is possible to improve screen defects such as bright spots and abnormal light emission.

[0012] The effects according to the present disclosure are not limited to the contents illustrated above, and the present disclosure also has various other effects.

[0013] The effects of the present disclosure are not limited to the above-mentioned effects, and other effects not mentioned above will be obviously understood by a person having ordinary skill in the art from the following description.

[0014] The objects of the present disclosure, the means for achieving the objects, and the above-described effects of the present disclosure do not specify essential features of the claims, and thus the scope of the claims is not limited to the disclosure of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other aspects, features and other advantages of the present disclosure will become more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which Fig. 1 is a schematic plan view of a display device according to an embodiment of the present disclosure; Fig. 2 a cross-sectional view along the line II-II' of Fig. 1 according to an embodiment of the present disclosure; Fig. 3 an enlarged plan view of area A of Fig. 1 according to an embodiment of the present disclosure; Fig. 4 a cross-sectional view along the line IV-IV' of Fig. 3 according to an embodiment of the present disclosure; Fig. 5 is a cross-sectional view of a display device according to another embodiment of the present disclosure; Fig. 6 is a cross-sectional view of a display device according to another embodiment of the present disclosure; Fig. 7 is a cross-sectional view of a display device according to another embodiment of the present disclosure, and Fig. 8 is a cross-sectional view of a display device according to another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0016] Advantages and characteristics of the present disclosure, as well as a method for achieving the advantages and characteristics, will become apparent by reference to the exemplary embodiments described in detail below, together with the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but may be embodied in various forms. The exemplary embodiments are provided only as examples so that those skilled in the art can fully understand the disclosures of the present disclosure and the scope of the present disclosure.

[0017] The shapes, sizes, ratios, angles, numbers, and the like shown in the accompanying drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Similar reference numerals generally indicate similar elements throughout the specification. Furthermore, in the following description of the present disclosure, detailed explanation of related technologies may be omitted in order not to unnecessarily obscure the subject matter of the present disclosure. The terms "including," "comprising," and "consisting of" as used herein are generally intended to enable the addition of other components unless the terms are used with the term "only." All references to the singular form may include the plural form unless expressly stated otherwise.

[0018] Components are designed to have a normal margin of error, even if this is not explicitly stated.

[0019] When the positional relationship between two parts is described with terms such as "on", "above", "below" and "next to", one or more parts may be positioned between the two parts, unless the terms are used with the term "immediate" or "direct".

[0020] When one element or layer is placed "on" another element or layer, another layer or element may be placed directly on top of the other element or between them.

[0021] Although the terms "first," "second," and the like are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from the other components. Therefore, a first component mentioned below may be a second component in a technical concept of the present disclosure.

[0022] Similar reference numbers generally indicate like elements throughout the specification.

[0023] A size and a thickness of each component illustrated in the drawing are shown for convenience of description, and the present disclosure is not limited to the size and thickness of the illustrated component.

[0024] The features of various embodiments of the present disclosure may be partially or fully observed or combined with each other and may be interconnected and operated in technically different ways, and the embodiments may be practiced independently of each other or in conjunction with each other.

[0025] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0026] Fig. 1 is a schematic plan view of a display device according to an exemplary embodiment of the present disclosure.

[0027] With reference to Fig. 1, a display panel DP of a display device 100 is a panel on which an image is displayed and may include a display element for implementing the image and circuits, wiring, components, and the like for driving the display element arranged thereon. The display panel DP may include a display area AA and a non-display area NA. In addition, the non-display area NA may include a through-hole TH.

[0028] The display area AA may be an area in which a plurality of subpixels SP are arranged and an image is displayed. Each of the plurality of subpixels SP is a single unit that emits light, and the display element and a driving circuit may be arranged in a respective one of the plurality of subpixels SP. For example, the display element for displaying the image and a circuit unit for driving the display element may be arranged in the plurality of subpixels SP. In this situation, when the display device 100 is an organic light-emitting display device, the display device may include an organic light-emitting diode, and when the display device 100 is a liquid crystal display device, the display device may include a liquid crystal device. The plurality of subpixels SP may include, but are not limited to, a red subpixel, a green subpixel, a blue subpixel, and a white subpixel.The drive circuit may include various transistors, storage capacitors, lines, and the like for driving the plurality of subpixels SP. The drive circuit may be formed from various components such as, but is not limited to, a driver transistor, a switching transistor, a sensing transistor, a storage capacitor, a gate line, and a data line.

[0029] The non-display area (NA) is an area in which no image is displayed and may include a first non-display area NA1 and a second non-display area NA2.

[0030] The first non-display area NA1 is an area where no image is displayed and is arranged around the display area AA. The first non-display area NA1 may be an area where various wirings, driver ICs, and the like for driving the plurality of subpixels SP arranged in the display area AA are arranged. For example, various driver ICs and the like, such as a gate driver IC and a data driver IC, may be arranged in the first non-display area NA1, but are not limited thereto. The first non-display area NA1 in which no image is displayed may be an aperture area, and the exemplary embodiments of the present disclosure are not limited thereto.

[0031] The second non-display region NA2 is a region where no image is displayed and is located in the display region AA. The second non-display region NA2 may include the through-hole TH. In addition, optical sensor components and the like, such as a camera or a proximity sensor, may be located in the through-hole TH. The second non-display region NA2 may be a region where the through-hole TH is located within the display region AA and may be defined as a hole in the active region (HiAA). In addition, the second non-display region NA2 may correspond to the aperture region surrounding the through-hole TH.

[0032] In the following, a specific structure of a subpixel SP is described with reference to Fig. 2 described.

[0033] Fig. Figure 2 is a cross-sectional view along line II-II' of Fig. 1 according to an embodiment of the present disclosure.

[0034] With reference to the Fig. 1 and Fig. 2, the display device 100 comprises a substrate 110, a transistor 130, an auxiliary electrode 141, a connecting electrode 142 and a light-emitting diode 150.

[0035] The substrate 110 is a support member for supporting other components of the display device 100 and may be formed from an insulating material. For example, the substrate 110 may be formed from glass, resin, or the like. Additionally, the substrate 110 may be formed from a polymer or plastic such as polyimide (PI), or may be formed from a flexible material.

[0036] A buffer layer 121 is disposed on the substrate 110. The buffer layer 121 can reduce the penetration of moisture or contaminants through the substrate 110. Furthermore, the buffer layer 121 can protect the transistor 130 from contaminants such as alkali ions leaching from the substrate 110. In addition, the buffer layer 121 can improve the adhesion between the layers formed over the buffer layer 121 and the substrate 110. The buffer layer 121 can be formed, for example, from a single layer or a duplex layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0037] Transistor 130 is arranged on buffer layer 121. Transistor 130 can drive light-emitting diode 150. Transistor 130 can have an active layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134.

[0038] Active layer 131 is disposed on buffer layer 121. Active layer 131 is a region where a channel is formed when transistor 120 is driven. Active layer 131 may include a channel region, a source region, and a drain region. Active layer 131 may be formed of a semiconductor material such as, but is not limited to, an oxide semiconductor, amorphous silicon, or polysilicon.

[0039] A gate insulating layer 122 is disposed on the active layer 131. The gate insulating layer 122 is an insulating layer for electrically insulating the active layer 131 and the gate electrode 132. Furthermore, the gate insulating layer 122 may be configured by, but is not limited to, a single layer or a duplex layer of silicon oxide (SiOx) or silicon nitride (SiNx).

[0040] The gate electrode 132 is disposed on the gate insulating layer 122. The gate electrode 132 is disposed on the gate insulating layer 122 so that it overlaps with the channel region of the active layer 131. The gate electrode 132 may be formed of a conductive material such as, but is not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0041] A first interlayer insulating layer 123 and a second interlayer insulating layer 124 are disposed on the gate electrode 132. Contact holes are formed in the first interlayer insulating layer 123 and the second interlayer insulating layer 124 to connect the source electrode 133 and the drain electrode 134, respectively, to the active layer 131. The first interlayer insulating layer 123 and the second interlayer insulating layer 124 may be formed of, but are not limited to, a single layer or a duplex layer of silicon oxide (SiOx) or silicon nitride (SiNx). In addition, the second interlayer insulating layer 124 may be formed of an organic material and configured by, but is not limited to, a single layer or a duplex layer of, for example, polyimide or photoacrylic.

[0042] The source electrode 133 and the drain electrode 134 are arranged on the second interlayer insulating layer 124 and spaced apart from each other. The source electrode 133 and the drain electrode 134 are electrically connected to the active layer 131 via the contact holes in the gate insulating layer 122, the first interlayer insulating layer 123, and the second interlayer insulating layer 124.

[0043] The source electrode 133 and the drain electrode 134 may be configured by a multilayer of a conductive material such as, but not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0044] For example, the source electrode 133 and the drain electrode 134 may have a three-layer structure. The source electrode 133 and the drain electrode 134 may have a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first and third layers may be formed of titanium (Ti), and the second layer may be formed of aluminum (Al), but are not limited thereto. Fig. 2, the source electrode 133 and the drain electrode 134 are shown as a single layer for clarity.

[0045] The auxiliary electrode 141 is disposed between the first interlayer insulating layer 123 and the second interlayer insulating layer 124. That is, the auxiliary electrode 141 may be disposed on the first interlayer insulating layer 123. The auxiliary electrode 141 may be an electrode forming a storage capacitor or transistors other than the transistor 130 described above, but is not limited thereto. The auxiliary electrode 141 may be formed of a conductive material such as, but is not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0046] A first planarization layer 125 and a second planarization layer 126 are disposed on the transistor 130. The first planarization layer 125 and the second planarization layer 126 are insulating layers that planarize an upper portion of the substrate 110. The first planarization layer 125 may include a contact hole for electrically connecting the transistor 130 and the connection electrode 142. In particular, the first planarization layer 125 may include a contact hole exposing one of the source electrode 133 and the drain electrode 134 of the thin-film transistor 130. The second planarization layer 126 may include a contact hole for electrically connecting the connection electrode 142 and the first electrode 151.The first planarization layer 125 and the second planarization layer 126 may be formed of an organic material and may be configured by, but are not limited to, a single layer of polyimide or photoacrylic or a multi-layer thereof.

[0047] The connection electrode 142 is disposed between the first planarization layer 125 and the second planarization layer 126. The connection electrode 142 is an electrode for connecting the source electrode 133 of the transistor 130 and the first electrode 151 of the light-emitting diode 150. The connection electrode 142 may be configured by a multilayer of a conductive material, such as, but not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0048] The connecting electrode 142 may, for example, have a three-layer structure. The connecting electrode 142 may, for example, have a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first and third layers may be formed of titanium (Ti), and the second layer may be formed of aluminum (Al), but are not limited thereto. Fig. 2, the connecting electrode 142 is shown as a single layer for simplicity.

[0049] The light-emitting diode 150 is arranged on the second planarization layer 126. The light-emitting diode 150 can be arranged in the display area AA. The light-emitting diode 150 includes a first electrode 151, a light-emitting layer 152, and a second electrode 153. Here, the first electrode 151 can be an anode electrode, and the second electrode 153 can be a cathode electrode.

[0050] The display device 100 can be implemented as a top-emission type or a bottom-emission type display device. In the case of the top-emission type, a reflective layer can be arranged under the first electrode 151 to reflect the light emitted from the light-emitting layer 152 to the second electrode 153. The reflective layer can contain, for example, a material with excellent reflection properties such as aluminum (Al) or silver (Ag), but is not limited thereto. Conversely, in the case of the bottom-emission type, the first electrode 151 can be formed only from a transparent conductive material. In the following, it is assumed that the display device 100 according to an exemplary embodiment of the present disclosure is of the top-emission type.

[0051] The first electrode 151 is arranged on the second planarization layer 126. The first electrode 151 may correspond to each of the plurality of subpixels SP. That is, the first electrode 151 may be electrically connected to the connection electrode 142 via the contact hole formed in the second planarization layer 126. Furthermore, the first electrode 151 may be electrically connected to the source electrode 133 of the transistor 130 via the connection electrode 142. The first electrode 151 may be formed of a conductive material with a high work function to supply holes to the light-emitting layer 152. For example, the first electrode 151 may be formed of a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO), but is not limited thereto.

[0052] A bank 127 is disposed on the first electrode 151 and the second planarization layer 126. The bank 127 may be disposed on the second planarization layer 126 to cover an edge of the first electrode 151. The bank 127 is an insulating layer disposed between the multiple subpixels SP to distinguish the multiple subpixels SP. The bank 127 may be an organic insulating material. For example, the bank 127 may be formed from a resin based on polyimide, acrylic, or benzocyclobutene (BCB), but is not limited thereto.

[0053] The light-emitting layer 152 is disposed on the first electrode 151 and the bank 127. The light-emitting layer 152 may be disposed over the entire surface of the substrate 110. That is, the light-emitting layer 152 may be a common layer disposed collectively in the plurality of subpixels SP. The light-emitting layer 152 may be an organic layer that emits light of a specific color. For example, the light-emitting layer 152 may be one of a red-light-emitting layer, a green-light-emitting layer, a blue-light-emitting layer, and a white-light-emitting layer. In this situation, when the light-emitting layer 152 is formed of the white-light-emitting layer, a color filter may be further disposed over the light-emitting diode 150.The light emission layer 152 may further include various layers such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, and an electron transport layer.

[0054] The second electrode 153 is arranged on the light-emitting layer 152. The second electrode 153 may be arranged as a single layer over the entire surface of the substrate 110. That is, the second electrode 153 may be a common layer arranged collectively in the plurality of subpixels SP. The second electrode 153 supplies electrons to the light-emitting layer 152 and may therefore be formed of a conductive material with a low work function. The second electrode 153 may be formed of, for example, a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO), a metal alloy such as MgAg, an ytterbium (Yb) alloy, or the like, and may further include, but is not limited to, a metal doping layer.

[0055] An encapsulation part 160 is arranged on the light-emitting diode 150. The encapsulation part 160 protects the light-emitting diode 150 from moisture penetrating from outside the display device 100. The encapsulation part 160 has a first encapsulation layer 161, a foreign matter cover layer 162, and a second encapsulation layer 163.

[0056] The first encapsulation layer 161 may be disposed on the second electrode 153 to suppress the ingress of moisture or oxygen. The first encapsulation layer 161 may be formed of an inorganic material such as, but is not limited to, silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AlYOz).

[0057] The foreign matter masking layer 162 is disposed on the first encapsulation layer 161 to flatten the surface. Additionally, the foreign matter masking layer 162 can mask or block foreign matter or particles that may occur during the manufacturing process. The foreign matter masking layer 162 can be formed from an organic material, such as, but not limited to, silicon oxycarbon (SiOxCz), acrylic, epoxy-based resin, etc.

[0058] The second encapsulation layer 163 is disposed on the foreign matter covering layer 162 and can suppress the ingress of moisture or oxygen, like the first encapsulation layer 161. In this situation, the second encapsulation layer 163 and the first encapsulation layer 161 can be arranged to encapsulate the foreign matter covering layer 162. Accordingly, the moisture or oxygen penetrating the light-emitting diode 150 can be more effectively reduced by the second encapsulation layer 163. The second encapsulation layer 163 can be formed of an inorganic material such as, but not limited to, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AlYOz).

[0059] A touch detection unit may be disposed on the encapsulation part 160. For example, a touch buffer layer 171 may be disposed on the third encapsulation layer 1163, and a touch electrode TE may be disposed on the touch buffer layer 171.

[0060] A touch electrode TE may include a touch sensor metal TS and a bridge metal BRG located in different layers. A touch interlayer insulating layer 173 may be disposed between the touch sensor metal TS and the bridge metal BRG.

[0061] The contact interlayer insulating layer 173 may comprise an organic material or an inorganic material. Furthermore, an inorganic layer and an organic layer may be stacked to form the contact interlayer insulating layer 173.

[0062] The touch buffer layer 171 and the touch interlayer insulating layer 173 may be arranged to eliminate a step at a point where the touch electrode TE is arranged and to electrically insulate the touch electrode TE.

[0063] A touch planarization layer 181 may be disposed on the touch sensing unit. The touch planarization layer 181 may be an organic layer for planarizing and protecting an upper portion of the touch sensing unit. For example, the touch planarization layer 181 may be formed from an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0064] Fig. 3 is an enlarged plan view of area A of Fig. 1 and Fig. 4 is a cross-sectional view along the line IV-IV' of Fig. 3 according to an embodiment of the present disclosure. In Fig. 3, for better illustration, only a plurality of data lines DL, a dam DAM and a hydrogen barrier layer 190 are shown among the various components of the display device 100.

[0065] With reference to the Fig. 3 and Fig. 4, the through-hole TH, the dam DAM, and a plurality of structures PT surrounding the through-hole TH, and a plurality of data lines DL bypassing the hydrogen barrier layer 190 and the through-hole TH are arranged in the second non-display region NA2 in the non-display region NA. Here, the second non-display region NA2 may refer to a region where no image is displayed between the through-hole TH and the regions surrounding the through-hole TH.

[0066] The through-hole TH is arranged in the second non-display region NA2. The through-hole TH can be arranged to physically penetrate the encapsulation part 160 of the substrate 110. The through-hole TH can be arranged to correspond to the camera or the optical sensor. Light can be easily transmitted through the through-hole TH from the upper portion of the optical component, such as the camera or the optical sensor.

[0067] The dam DAM is arranged to surround the through-hole TH. The dam DAM may be arranged between the through-hole TH and the display region AA. In this situation, the dam DAM may be arranged closer to the through-hole TH than the data line DL passing through the second non-display region NA2. The dam DAM may also be arranged closer to the through-hole TH than the hydrogen barrier layer 190. For example, the dam DAM may completely surround the through-hole TH, and the hydrogen barrier layer 190 may completely surround the dam DAM. The hydrogen barrier layer 190 and the dam DAM may also have circular shapes or shapes corresponding to the through-hole in plan view, but the embodiments are not limited thereto. The dam DAM can prevent the foreign matter covering layer 162, which is part of the encapsulation part 160, from overflowing into the through-hole TH.That is, the dam DAM is a structure that suppresses the foreign matter covering layer 162 of the encapsulating part 160 to protect the light-emitting diode from entering or leaking into the through-hole TH. Fig. 3 and Fig. 4 show a single dam DAM, but the number of dams DAM is not limited to this and may have more than one dam DAM.

[0068] The dam DAM may be arranged in a closed curved shape surrounding the outer side of the through-hole TH. The dam DAM may suppress overflow of the foreign matter covering layer 162. Accordingly, the foreign matter covering layer 162 may be arranged from the display area AA to the inner side of the dam DAM.

[0069] The dam DAM has a first sub-dam DAMa and a second sub-dam DAMb at the first sub-dam DAMa. The first sub-dam DAMa can be formed simultaneously from the same material as the second planarization layer 126. The second sub-dam DAMb can be formed simultaneously from the same material as the bank layer 127. However, the material and number of layers of the dam DAM are not limited thereto.

[0070] The plurality of structures PT may be arranged in a closed curve surrounding the outside of the through-hole TH. The plurality of structures PT may be arranged between the hydrogen barrier layer 190 and the dam DAM and between the dam DAM and the through-hole TH. Furthermore, the plurality of structures PT may be arranged so that they are spaced apart by a certain distance. Fig. 4 shows the multiple structures PT, two to the left and six to the right of the dam (DAM), but are not limited to these.

[0071] The plurality of structures PT include a first layer PT1, a second layer PT2 disposed on the first layer PT1, and a third layer PT3 disposed on the second layer PT2. The plurality of structures PT may be disposed on the second interlayer insulating layer 124 and may be formed of the same material and have the same shape as a first hydrogen barrier layer 191 or a second hydrogen barrier layer 195.

[0072] The first layer PT1 and the third layer PT3 may contain a titanium (Ti)-based material with excellent hydrogen capture capability. Titanium (Ti) is a metal with hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer PT1 and the third layer PT3 may contain a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer PT1 and the third layer PT3 may contain a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which have excellent hydrogen adsorption capability, similar to titanium (Ti).

[0073] The second layer PT2 may contain a conductive material. For example, the second layer PT2 may contain aluminum (Al), but may also be formed of, but is not limited to, copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0074] The plurality of PT structures can suppress moisture penetration into the display area AA through the light-emitting layer 152. That is, the light-emitting layer 152, which is susceptible to moisture penetration, can have a single-line structure through the plurality of PT structures. Specifically, the second layer PT2 of the plurality of PT structures can have a bottom area smaller than an upper area of ​​the first layer PT1, and the third layer PT3 can have a bottom area larger than an upper area of ​​the second layer PT2. Accordingly, the light-emitting layer 152 arranged on the plurality of PT structures can be discontinuous and unconnected due to the plurality of PT structures.For example, a cross section of each of the plurality of structures PT may have a mushroom-like shape, an anvil shape, or an inverted conical shape, which may have eaves or overhanging portions to form undercut areas, and the plurality of structures PT intersect the light-emitting layer 152 to block or prevent possible moisture absorption into the display area AA. Accordingly, even if moisture penetrates through the light-emitting layer 152 exposed on a side surface of the through-hole TH, the penetrated moisture can be prevented from moving into the display area AA due to the unconnected structure of the light-emitting layer 152. Furthermore, the first encapsulation layer 161 may be disposed on the light-emitting layer 152 so as to completely cover the unconnected light-emitting layer 152.Therefore, the first encapsulation layer 161 can effectively block the penetration of moisture even if the moisture penetrates the light-emitting layer 152. While . Fig. 4 shows only the light-emitting layer 152 arranged under the encapsulation part 160, the second electrode 153 may be further arranged between the encapsulation part 160 and the light-emitting layer 152.

[0075] The plurality of data lines DL may be arranged on the second interlayer insulating layer 124 and the first planarization layer 125. In this situation, the plurality of data lines DL may be arranged closer to the display region AA than the hydrogen barrier layer 190. That is, the plurality of data lines DL may be arranged farther from the dam DAM and the via TH than the hydrogen barrier layer 190. In this situation, the plurality of data lines DL may be arranged between the first hydrogen barrier layer 191, the second hydrogen barrier layer 195, and the transistor 130, and arranged to bypass or extend around the via TH in the second non-display region NA2.

[0076] The plurality of data lines DL may include a first data line DL1 disposed on the second interlayer insulating layer 124 and a second data line DL2 disposed on the first planarization layer 125.

[0077] The first data line DL1 may be formed of the same material as the source electrode 133, the drain electrode 134, and the first hydrogen barrier layer 191 on the second interlayer insulating layer 124. That is, the first data line DL1 may be formed simultaneously with the source electrode 133, the drain electrode 134, and the first hydrogen barrier layer 191.

[0078] The first data line DL1 has a first layer DLa, a second layer DLb arranged on the first layer DLa, and a third layer DLc arranged on the second layer DLb.

[0079] The second layer DLb of the first data line DL1 may have a bottom area smaller than an upper area of ​​the first layer DLa. Furthermore, the third layer DLc may have a bottom area larger than an upper area of ​​the second layer DLb. Accordingly, the first data line DL1 may include the first layer DLa and the third layer DLc, which are arranged on the lower and upper sides of the first data line DL1, respectively, to have the largest width, and the second layer DL1b, which is arranged in the center thereof to have the smallest width. For example, a cross section of the data lines may have a shape similar to that of the plurality of structures PT.

[0080] The first layer DLa and the third layer DLc may contain the titanium (Ti)-based material with excellent hydrogen capture ability. Titanium (Ti) is a metal with hydrogen adsorption ability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer and the third layer may contain a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer DLa and the third layer DLc may contain a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which have excellent hydrogen adsorption ability, similar to titanium (Ti).

[0081] The second layer DLb may contain a conductive material. The second layer may contain, for example, aluminum (Al), but may also be formed of, but is not limited to, copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0082] The second data line DL2 may be formed from the same material as the connection electrode 142 and the second hydrogen barrier layer 195 on the first planarization layer 125. The second data line DL2 may be formed simultaneously with the connection electrode 142 and the second hydrogen barrier layer 195.

[0083] The second data line DL2 has a first layer, a second layer arranged on the first layer, and a third layer arranged on the second layer.

[0084] The second layer of the second data line DL2 may have a bottom area smaller than the top area of ​​the first layer. Furthermore, the third layer may have a bottom area larger than the top area of ​​the second layer. Accordingly, the second data line may include: the first and third layers arranged on the bottom side and the top side of the second data line, respectively, to have the largest width, and the second layer arranged in the center thereof to have the smallest width.

[0085] The first and third layers may contain a titanium (Ti)-based material with excellent hydrogen capture capability. Titanium (Ti) is a metal with hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first and third layers may contain a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first and third layers may contain a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which have excellent hydrogen adsorption capability, similar to titanium (Ti).

[0086] The second layer may comprise a conductive material. For example, the second layer may contain aluminum (Al), but may also be formed of, but is not limited to, copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0087] The hydrogen barrier layer 190 is arranged to surround the dam DAM. The hydrogen barrier layer 190 may be arranged between the dam DAM and the display region AA. In this situation, the hydrogen barrier layer 190 may be arranged closer to the plurality of data lines DL passing through the second non-display region NA2 than the dam DAM. The hydrogen barrier layer 190 may be arranged in a closed loop shape to surround the dam DAM centered on the through-hole TH.

[0088] The hydrogen barrier layer 190 may include the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195.

[0089] The first hydrogen barrier layer 191 may be disposed on the second interlayer insulating layer 124. The first hydrogen barrier layer 191 may be disposed on the second interlayer insulating layer 124 and formed from the same material as the source electrode 133, the drain electrode 134, and the first data line DL. The first hydrogen barrier layer 191 may contain titanium (Ti). That is, the first hydrogen barrier layer 191 may be formed simultaneously with the source electrode 133, the drain electrode 134, and the first data line DL.

[0090] The first hydrogen barrier layer 191 may include a first layer 191a, a second layer 191b disposed on the first layer 191a, and a third layer 191c disposed on the second layer 191b.

[0091] The second layer 191b of the first hydrogen barrier layer 191 may have a bottom area smaller than an upper area of ​​the first layer 191a. Furthermore, the third layer 191c may have a bottom area larger than an upper area of ​​the second layer 191b. Accordingly, the first hydrogen barrier layer 191 may include: the first layer 191a and the third layer 191c, which are arranged on the lower side and the upper side of the first hydrogen barrier layer 191, respectively, to have the largest width, and the second layer 191b, which is arranged in the center thereof to have the smallest width.

[0092] The first layer 191a and the third layer 191c may contain a titanium (Ti)-based material with excellent hydrogen capture capability. Titanium (Ti) is a metal with hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer 191a and the third layer 191c may contain a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer 191a and the third layer 191c may contain a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which have excellent hydrogen adsorption capability similar to titanium (Ti).

[0093] The second layer 191b may contain a conductive material. For example, the second layer may contain aluminum (Al), but may also be formed of, but is not limited to, copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0094] The first planarization layer 125 is arranged on the second interlayer insulating layer 124, the plurality of data lines DL and the first hydrogen barrier layer 191.

[0095] The second hydrogen barrier layer 195 may be arranged to overlap the first hydrogen barrier layer 191 at the first planarization layer 125. The second hydrogen barrier layer 195 may be arranged in a first contact hole C1 of the first planarization layer 125 to contact the first hydrogen barrier layer 191.

[0096] The second hydrogen barrier layer 195 may be formed from the same material as the connection electrode 142. The second hydrogen barrier layer 195 may contain titanium (Ti). The second hydrogen barrier layer 195 may be formed simultaneously with the connection electrode 142 on the first planarization layer 125.

[0097] The second hydrogen barrier layer 195 may include a first layer 195a, a second layer 195b disposed on the first layer 195a, and a third layer 195c disposed on the second layer 195b.

[0098] The second layer 195b of the second hydrogen barrier layer 195 may have a bottom area smaller than an upper area of ​​the first layer 195a. Furthermore, the third layer 195c may have a bottom area larger than an upper area of ​​the second layer 195b. Accordingly, the second hydrogen barrier layer 195 may include: the first layer 195a and the third layer 195c, which are arranged on the lower side and the upper side of the second hydrogen barrier layer 195, respectively, to have the largest width, and the second layer 195b, which is arranged in the center thereof to have the smallest width.

[0099] The first layer 195a and the third layer 195c may include a titanium (Ti)-based material with excellent hydrogen capture capability. Titanium (Ti) is a metal with hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer 195a and the third layer 195c may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer 195a and the third layer 195c may include a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which have excellent hydrogen adsorption capability in addition to titanium (Ti).

[0100] The second layer 195b may contain a conductive material. For example, the second layer 195b may contain aluminum (Al), but may also be formed of, but is not limited to, copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0101] The hydrogen barrier layer 190 may be electrically floating. In particular, the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195 may be electrically floating. That is, no voltage is applied to the hydrogen barrier layer 190, and the hydrogen barrier layer 190 may be maintained in an electrically floating state. For example, the hydrogen barrier layer 190 may include a plurality of dummy data lines (e.g., hydrogen barrier layers) that completely surround the through-hole TH, and the plurality of dummy data lines may be connected to each other to form a net-like barrier structure, a bird's nest-like structure, or a multi-layer wall structure, but the embodiments are not limited thereto. Accordingly, the plurality of dummy data lines (e.g.,Hydrogen barrier layers) together form a combined structure that can better prevent hydrogen or other gases that may penetrate through the via TH from reaching the transistors in the display region AA. Thus, the transistors in the display region AA can be safely protected.

[0102] The hydrogen barrier layer 190 may block a path through which hydrogen flows through the first planarization layer 125 into the transistor 130. That is, the hydrogen barrier layer 190 may have a hydrogen barrier structure that blocks the path through which hydrogen flows from the inside of the encapsulation part 160 or through the hole TH through the side surface of the first planarization layer 125. Specifically, the hydrogen barrier layer 190 is formed of a material with excellent hydrogen trapping ability as described above and may be arranged to completely cover the side surface of the first planarization layer 125 through the second hydrogen barrier layer 195, which is connected to the first hydrogen barrier layer 191 through the first contact hole C1.For example, the first contact hole C1 extends from the bottom surface of the second hydrogen barrier layer 195 to the top surface of the first hydrogen barrier layer 191, blocking the space between the first and second hydrogen barrier layers in the first planarization layer 125. Additionally, the hydrogen barrier layer 190 is arranged in a closed loop shape to surround the dam DAM with the via hole TH at the center. Accordingly, even if hydrogen diffuses from the encapsulation part 160 or the via hole TH, the hydrogen barrier structure of the hydrogen barrier layer 190 can prevent or inhibit hydrogen from flowing into the transistor 130 in the display region AA.

[0103] Generally, to arrange the optical components such as the camera in the display area, a through-hole is arranged in the display area, and the optical components such as a camera are arranged in an area corresponding to the through-hole. When the through-hole is arranged in the display area, the hydrogen diffused from the encapsulating part may penetrate into the planarization layer through a side surface portion of the planarization layer. In addition, when the hydrogen thus penetrated reaches an active layer of the transistor, the transistor may become conductive. The conductive transistor may cause high-brightness defects such as very bright spots, and abnormal light emission may occur in the display device because the transistor is the conductor.

[0104] Accordingly, in the display device 100 according to the exemplary embodiment of the present disclosure, the hydrogen barrier layer 190 may be disposed to cover the side surface of the first planarization layer 125, thereby blocking a hydrogen inflow path. Specifically, the hydrogen barrier layer 190 may be disposed to completely cover the side surface of the first planarization layer 125 by connecting the second hydrogen barrier layer 195 to the first hydrogen barrier layer 191. The hydrogen barrier layer 190 blocks the path through which hydrogen diffusing from the encapsulation part 160 can penetrate into the first planarization layer 125.In addition, the hydrogen barrier layer 190 can be arranged in a closed loop shape to surround the dam DAM with the via-hole TH at the center, and thus can suppress hydrogen from flowing into the transistor 130 in the display region AA even if the hydrogen diffuses from the encapsulating part 160 or the via-hole TH. Accordingly, in the display device 100 according to the exemplary embodiment of the present disclosure, the hydrogen barrier layer 190 can suppress an oxide semiconductor layer from becoming conductive due to hydrogen and improve the reliability of the display device 100.Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, by suppressing the transistor 130 from becoming conductive due to the hydrogen, the high-brightness defects such as the strong bright spots and the abnormal light emission can be minimized or prevented.

[0105] Fig. 5 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. The display device 200 of Fig. 5 differs from the display device 100 of Fig. 1 to 4 with respect to a hydrogen barrier layer 290, and other components are substantially the same, so duplicate description thereof will be omitted.

[0106] With reference to Fig. 5, the hydrogen barrier layer 290 may include a second hydrogen barrier layer 295 arranged to overlap the first hydrogen barrier layer 191. For example, the hydrogen barrier layer 290 may include a plurality of stacked dummy data lines that completely surround or form rings around the through-hole TH. In this situation, the second hydrogen barrier layer 295 may be in contact with the first hydrogen barrier layer 191 via a first contact hole C1' of the first planarization layer 125. Here, there may be more than one first contact hole C1'. For example, a plurality of dummy data lines (e.g., hydrogen barrier layers) may be stacked one on top of the other and connected to each other through a plurality of contact holes to form a combined wall structure having a ring shape that can completely protect the side of the first planarization layer 125.That is, a first layer 295a of the second hydrogen barrier layer 295 may be in contact with the first hydrogen barrier layer 191 through a plurality of first contact holes C1' penetrating the first planarization layer 125. Accordingly, the second hydrogen barrier layer 295 may be in contact with the first hydrogen barrier layer 191 via the plurality of contact holes C1' of the first planarization layer 125 to completely cover the side surface of the first planarization layer 125. In . Fig. 5, the number of the plurality of first contact holes C1' is shown as two, but is not limited thereto.

[0107] Accordingly, in the display device 200 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 290 may be disposed to cover the side surface of the first planarization layer 125, thereby blocking a hydrogen inflow path. Specifically, the hydrogen barrier layer 190 may be disposed to completely cover the side surface of the first planarization layer 125 through the second hydrogen barrier layer 195, which is connected to the first hydrogen barrier layer 191 through the first contact holes C1'. The hydrogen barrier layer 190 blocks the path through which hydrogen diffusing from the encapsulation part 160 can penetrate into the first planarization layer 125 through the side surface portion of the first planarization layer 125.The hydrogen barrier layer 190 can suppress or prevent the flow of hydrogen into the transistor 130 in the display region AA even if the hydrogen diffuses from the through-hole TH.

[0108] Additionally, in the display device 200 according to another exemplary embodiment of the present disclosure, since the plurality of first contact holes C1' of the first planarization layer 125 connects the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295, the hydrogen barrier layer 290 can stably block the hydrogen inflow path even when some of the plurality of first contact holes C1' are not connected. That is, when the first contact hole C1 configured to cover the side surface of the first planarization layer 125 is separated due to the impact, the side surface of the first planarization layer 125 can be exposed.In this situation, the plurality of first contact holes C1' connecting the second hydrogen barrier layer 295 to the first hydrogen barrier layer 191 can more stably block the path through which hydrogen diffusing from the encapsulation part 160 through the side surface portion of the first planarization layer 125 penetrates into the first planarization layer 125. Accordingly, in the display device 200 according to another exemplary embodiment of the present disclosure, by disposing the hydrogen barrier layer 290 having a plurality of first contact holes C1' connecting the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295, it is possible to more stably block the hydrogen inflow path. For example, a multi-layer wall structure can be provided.Furthermore, the contact holes may extend completely around the through-hole TH in a closed ring shape corresponding to the hydrogen barrier layers, but the embodiments are not limited to this. By preventing the oxide semiconductor layer, which is the active layer 131 of the transistor 130, from becoming conductive due to hydrogen, the hydrogen barrier layer 290 can improve the reliability of the display device 200.

[0109] Fig. 6 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. The display device 200 of Fig. 6 differs from the display device 100 of Fig. 1 to 4 only by a hydrogen barrier layer 390 (e.g., a third hydrogen barrier layer 399 is further included), and other components are substantially the same, so duplicate description thereof is omitted.

[0110] Referring to Fig. 6, the hydrogen barrier layer 390 may include the first hydrogen barrier layer 191, the second hydrogen barrier layer 195, and a third hydrogen barrier layer 399.

[0111] The third hydrogen barrier layer 399 may be disposed on the second hydrogen barrier layer 195. In particular, the third hydrogen barrier layer may be disposed to overlap the second hydrogen barrier layer 195 on the second planarization layer 126. The third hydrogen barrier layer 399 may be in contact with the second hydrogen barrier layer 195 through the second contact hole C2 of the second planarization layer 126. For example, the hydrogen barrier layer 390 may have a three-layer wall structure covering the sides of the first planarization layer 125 and the second planarization layer 126 and a top surface of the second planarization layer 126.

[0112] The third hydrogen barrier layer 399 may include a titanium (Ti)-based material with excellent hydrogen capture capability. Titanium (Ti) is a metal with hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the third hydrogen barrier layer 399 may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the third hydrogen barrier layer 399 may include a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which have excellent hydrogen adsorption capability, similar to titanium (Ti).

[0113] The hydrogen barrier layer 390 may be electrically floating. Specifically, the first hydrogen barrier layer 191, the second hydrogen barrier layer 195, and the third hydrogen barrier layer 399 may be electrically floating. This means that no voltage is applied to the hydrogen barrier layer 390, and the hydrogen barrier layer 390 may be maintained in an electrically floating state.

[0114] The hydrogen barrier layer 390 may block the path through which hydrogen flows through the first planarization layer 125 and the second planarization layer 126 into the transistor 130. That is, the hydrogen barrier layer 390 may have the hydrogen barrier structure that blocks the path through which hydrogen diffused from the interior of the encapsulation part 160 or the via hole TH flows through the side surfaces of the first planarization layer 125 and the second planarization layer 126. Specifically, the hydrogen barrier layer 390 is formed of a material with excellent hydrogen trapping ability, as described above. The hydrogen barrier layer 390 may be arranged to completely cover the side surface of the first planarization layer 125 through the second hydrogen barrier layer 195, which is connected to the first hydrogen barrier layer 191 through the first contact hole C1.The hydrogen barrier layer 390 can also be arranged to completely cover the side surface of the second planarization layer 126 with the third hydrogen barrier layer 399, which is connected to the second hydrogen barrier layer 195 through the second contact hole C2. For example, the second contact hole C2 extends from the bottom surface of the third hydrogen barrier layer 399 to the top surface of the second hydrogen barrier layer 195 to block the space between the second and third hydrogen barrier layers in the second planarization layer 126. In addition, the hydrogen barrier layer 390 is arranged in a closed loop shape to surround the dam DAM with the via hole TH at the center.The contact holes may also be formed in a closed loop or ring shape and filled with metal to completely seal the sides of the planarization layers, but the embodiments are not limited thereto. Accordingly, even if hydrogen diffuses from the encapsulation part 160 or the via hole TH, the hydrogen barrier structure of the hydrogen barrier layer 190 can prevent or suppress hydrogen from flowing into the transistor 130 in the display area AA.

[0115] Accordingly, in a display device 300 according to yet another exemplary embodiment of the present disclosure, the hydrogen barrier layer 390 may be arranged to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking the hydrogen inflow path. Specifically, the hydrogen barrier layer 390 may be arranged to completely cover the side surface of the first planarization layer 125 by the second hydrogen barrier layer 195, which is connected to the first hydrogen barrier layer 191 through the first contact hole C1. The hydrogen barrier layer 390 may also be arranged to completely cover the side surface of the second planarization layer 126 by the third hydrogen barrier layer 399, which is connected to the second hydrogen barrier layer 195 through the second contact hole C2.Therefore, the hydrogen barrier layer 390 can block the path through which hydrogen diffused from the encapsulation part 160 through the side portions of the first planarization layer 125 and the second planarization layer 126 can penetrate into the first planarization layer 125 and the second planarization layer 126. Accordingly, in the display device 300 according to yet another exemplary embodiment of the present disclosure, the hydrogen barrier layer 390 can be arranged to prevent the transistor 130 from conducting due to hydrogen, thereby minimizing high-brightness defects such as strong bright spots and abnormal light emission, and improving the reliability of the display device 300.

[0116] Fig. 7 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. A display device 400 of Fig. 7 differs from the display device 300 of Fig. 6 with respect to a hydrogen barrier layer 490, and other components are substantially the same, so duplicate description thereof is omitted.

[0117] With reference to Fig. 7, the hydrogen barrier layer 490 may include the first hydrogen barrier layer 191, the second hydrogen barrier layer 195, and a third hydrogen barrier layer 499.

[0118] The hydrogen barrier layer 490 includes the third hydrogen barrier layer 499 arranged to overlap the second hydrogen barrier layer 195. In this situation, the third hydrogen barrier layer 499 may be in contact with the second hydrogen barrier layer 195 through the second contact hole C2' of the second planarization layer 126. Here, there may be more than one second contact hole C2'. For example, the third hydrogen barrier layer 499 may be connected to the second hydrogen barrier layer 195 via three or more contact holes. The contact holes may also be formed in the shape of a closed loop or ring and filled with metal to completely seal the sides of the planarization layers, but the embodiments are not limited thereto.That is, the third hydrogen barrier layer 499 may be in contact with the second hydrogen barrier layer 195 through the plurality of second contact holes C2' penetrating the second planarization layer 126. Accordingly, the third hydrogen barrier layer 499 may be in contact with the second hydrogen barrier layer 195 through the plurality of contact holes C2' of the second planarization layer 126 to completely cover the side surface of the second planarization layer 126. In . Fig. 7, the number of the second contact holes C2' is shown as three, but is not limited thereto.

[0119] The third hydrogen barrier layer 499 may comprise a titanium (Ti)-based material with excellent hydrogen capture capability. Titanium (Ti) is a metal with hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the third hydrogen barrier layer 499 may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the third hydrogen barrier layer 399 may include a material such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U), which, similar to titanium (Ti), have excellent hydrogen adsorption capability.

[0120] Accordingly, in a display device 400 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 490 may be arranged to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking the hydrogen inflow path. In particular, the hydrogen barrier layer 490 may be arranged to completely cover the side surface of the first planarization layer 125 by the second hydrogen barrier layer 195, which is connected to the first hydrogen barrier layer 191 through the first contact hole C1. The hydrogen barrier layer 490 may also be arranged to completely cover the side surface of the second planarization layer 126 by the third hydrogen barrier layer 499, which is connected to the second hydrogen barrier layer 195 through the plurality of second contact holes C2'.Therefore, the hydrogen barrier layer 490 can block the path through which the hydrogen diffused from the encapsulation part 160 through the side surface portions of the first planarization layer 125 and the second planarization layer 126 can penetrate into the first planarization layer 125 and the second planarization layer 126.

[0121] Additionally, in the display device 400 according to another exemplary embodiment of the present disclosure, by virtue of the plurality of second contact holes C2' of the second planarization layer 126 connecting the second hydrogen barrier layer 195 and the third hydrogen barrier layer 499, the hydrogen barrier layer 490 can stably block the hydrogen inflow path even when some of the plurality of second contact holes C2' are disconnected. That is, when the second contact hole C2 configured to cover the side surface of the second planarization layer 126 is disconnected due to the impact, the side surface of the second planarization layer 126 can be exposed.In this situation, the plurality of second contact holes C2' connecting the third hydrogen barrier layer 499 to the second hydrogen barrier layer 195 can more stably block the path through which hydrogen diffusing from the encapsulation part 160 through the side surface portion of the second planarization layer 126 penetrates into the second planarization layer 126 (e.g., the plurality of contact holes can be filled with metal and serve as support walls if one of the contact holes is damaged). Accordingly, in the display device 400 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 490 can be arranged to prevent the transistor 130 from conducting due to hydrogen, thereby minimizing high-brightness defects such as strong bright spots and abnormal light emission, and improving the reliability of the display device 400.

[0122] Fig. 8 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. A display device 500 of Fig. 8 differs from the display device 400 of Fig. 7 with respect to a hydrogen barrier layer 590, and other components are substantially the same, so duplicate description thereof will be omitted.

[0123] With reference to Fig. 8, the hydrogen barrier layer 590 may include the first hydrogen barrier layer 191, a second hydrogen barrier layer 395, and a third hydrogen barrier layer 499.

[0124] The second hydrogen barrier layer 395 may be in contact with the first hydrogen barrier layer 191 through the first contact hole C1' of the first planarization layer 125. Here, there may be more than one first contact hole C1'. That is, a first layer 395a of the second hydrogen barrier layer 395 may be in contact with the first hydrogen barrier layer 191 through the plurality of first contact holes C1' penetrating the first planarization layer 125. Accordingly, the second hydrogen barrier layer 395 may be in contact with the first hydrogen barrier layer 191 through the plurality of contact holes C1' of the first planarization layer 125 to completely cover the side surface of the first planarization layer 125. Fig. 8, the number of the plurality of first contact holes C1' is shown as two, but is not limited thereto.

[0125] Accordingly, in the display device 500 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 590 may be arranged to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking the hydrogen inflow path. In particular, the hydrogen barrier layer 590 may be arranged to completely cover the side surface of the first planarization layer 125 by the second hydrogen barrier layer 395, which is connected to the first hydrogen barrier layer 191 through the plurality of first contact holes C1'. The hydrogen barrier layer 590 may also be arranged to completely cover the side surface of the second planarization layer 126 by the third hydrogen barrier layer 499, which is connected to the second hydrogen barrier layer 395 through the plurality of second contact holes C2'. Fig. 8, the number of the plurality of second contact holes C2' is shown as three, but is not limited thereto. The number of second contact holes C2' may be greater than the number of first contact holes C1'. For example, in Fig. 8 the number of second contact holes C2' is three and the number of first contact holes C1' is two, but is not limited thereto.

[0126] Therefore, the hydrogen barrier layer 590 can block the path through which the hydrogen diffused from the encapsulation part 160 through the side surface portions of the first planarization layer 125 and the second planarization layer 126 can penetrate into the first planarization layer 125 and the second planarization layer 126.

[0127] Additionally, in the display device 500 according to another exemplary embodiment of the present disclosure, the plurality of first contact holes C1' of the first planarization layer 125 may connect the first hydrogen barrier layer 191 and the second hydrogen barrier layer 395, and the plurality of second contact holes C2' of the second planarization layer 126 may connect the second hydrogen barrier layer 395 and the third hydrogen barrier layer 499. In this way, the contact holes may be filled with metal to form a large, multi-layered wall structure having a closed loop shape or ring shape surrounding the through-hole TH.Thus, even if at least one of the plurality of first contact holes C1' and the plurality of second contact holes C2' is disconnected, the hydrogen barrier layer 590 can more stably block the path through which hydrogen diffused from the encapsulation part 160 through the side surface portions of the first planarization layer 125 and the second planarization layer 126 penetrates into the first planarization layer 125 and the second planarization layer 126. Accordingly, in the display device 500 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 590 can be arranged to prevent the transistor 130 from conducting due to hydrogen, thereby minimizing high-brightness defects such as strong bright spots and abnormal light emission, and improving the reliability of the display device 400.According to embodiments of the disclosure, the hydrogen barrier layers arranged in planarization layers prevent hydrogen from flowing into transistors in the display area. A contact hole connects the hydrogen barrier layers arranged in different planarization layers, and the combined structure can completely cover side surfaces of the planarization layers. Furthermore, the presence of multiple contact holes between the hydrogen barrier layers can further improve the ability to block the inflow of hydrogen when one of the contact holes is separated due to an impact.

[0128] The exemplary embodiments of the present disclosure may also be described as follows:

[0129] According to one aspect of the present disclosure, a display device comprises: a substrate having: a non-display region having a through-hole and a display region surrounding the non-display region, a dam surrounding the through-hole, a first hydrogen barrier layer surrounding the dam, a first planarization layer on the first hydrogen barrier layer, a second hydrogen barrier layer at the first planarization layer, a first contact hole at the first planarization layer, wherein the second hydrogen barrier layer surrounds the dam and overlaps with at least a portion of the first hydrogen barrier layer, wherein the first hydrogen barrier layer is in contact with the second hydrogen barrier layer in the first contact hole, and the first contact hole surrounds the dam.

[0130] The number of first contact holes can be a plurality.

[0131] The display device may further include a transistor disposed on the substrate, and the first hydrogen barrier layer includes the same material as a source electrode or a drain electrode of the transistor.

[0132] The display device may further comprise: a connection electrode on the first planarization layer connected to the transistor, a second planarization layer on the first planarization layer, the second planarization layer covering the connection electrode and the second hydrogen barrier layer, a light-emitting diode on the second planarization layer connected to the connection electrode, the connection electrode and the second hydrogen barrier layer comprising the same material.

[0133] The first hydrogen barrier layer and the second hydrogen barrier layer may comprise titanium (Ti).

[0134] The display device may further comprise a plurality of data lines between the transistor and the first and second hydrogen barrier layers, the plurality of data lines bypassing the via hole.

[0135] The first hydrogen barrier layer and the second hydrogen barrier layer may be electrically mass-free.

[0136] The display device may further comprise: a second planarization layer on the first planarization layer, wherein the second planarization layer covers the second hydrogen barrier layer, and a third hydrogen barrier layer on the second planarization layer, wherein the third hydrogen barrier layer surrounds the dam and overlaps with at least a portion of the second hydrogen barrier layer, wherein the second planarization layer further comprises a second contact hole, the second planarization layer surrounds the dam, and the second hydrogen barrier layer is in contact with the third hydrogen barrier layer in the second contact hole.

[0137] The number of second contact holes may be a plurality.

[0138] The third hydrogen barrier layer may comprise titanium (Ti).

[0139] The first hydrogen barrier layer, the second hydrogen barrier layer and the third hydrogen barrier layer may be electrically groundless.

[0140] The display device may further include a plurality of structures disposed between the first hydrogen barrier layer and the dam and between the dam and the through-hole, wherein the plurality of structures are formed of the same material as and have the same shape as the first hydrogen barrier layer or the second hydrogen barrier layer.

[0141] Each of the plurality of structures may include: a first layer, a second layer on the first layer, the second layer having a bottom area that is smaller than a top area of ​​the first layer, and a third layer on the second layer, the third layer having a bottom area that is larger than a top area of ​​the second layer.

[0142] A width of the third hydrogen barrier layer may be longer than a width of the second hydrogen barrier layer and longer than a width of the first hydrogen barrier layer.

[0143] The number of first contact holes and the number of second contact holes are a plurality, and the number of second contact holes may be larger than the number of first contact holes.

[0144] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only, but are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the exemplary embodiments described above are only illustrative in all respects and do not limit the present disclosure. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] KR 10-2024-0019569

[0001]

Claims

[1] Display device (100, 200, 300, 400, 500) comprising: a substrate (110) comprising: a non-display region (NA2) having a through-hole (TH), and a display region (AA) surrounding the non-display region (NA2); a dam (DAM) surrounding the through hole (TH); a first hydrogen barrier layer (191) surrounding the dam (DAM); a first planarization layer (125) disposed on the first hydrogen barrier layer (191); a second hydrogen barrier layer (195, 295, 395) surrounding the dam (DAM), the second hydrogen barrier layer (195, 295, 395) being disposed on the first planarization layer (125) and overlapping with at least a portion of the first hydrogen barrier layer (191); and a first contact hole (C1, C1') in the first planarization layer (125), the first contact hole (C1) surrounding the dam (DAM), wherein the first hydrogen barrier layer (191) is in contact with the second hydrogen barrier layer (195, 295, 395) via the first contact hole (C1, C1'). [2] The display device (200, 500) according to claim 1, wherein the first contact hole (C1') has a plurality of first contact holes (C1'). [3] Display device (100, 200, 300, 400, 500) according to claim 1 or 2, further comprising: a transistor (130) arranged on the substrate (110) in the display area (AA), wherein the first hydrogen barrier layer (191) comprises a same material as a source electrode (133) or a drain electrode (134) of the transistor (130). [4] Display device (100, 200, 300, 400, 500) according to claim 3, further comprising: a connection electrode (142) disposed on the first planarization layer (125) and connected to the transistor (130); a second planarization layer (126) disposed on the first planarization layer (125), the second planarization layer (126) covering the connection electrode (142) and the second hydrogen barrier layer (195, 295, 395); and a light-emitting diode (150) arranged on the second planarization layer (126) and connected to the connection electrode (142), wherein the connecting electrode (142) and the second hydrogen barrier layer (195) comprise the same material. [5] The display device (100, 200, 300, 400, 500) according to claim 4, wherein the first hydrogen barrier layer (191) and the second hydrogen barrier layer (195, 295, 395) comprise titanium (Ti). [6] Display device (100, 200, 300, 400, 500) according to claim 4 or 5, further comprising: a plurality of data lines (DL) arranged between the transistor (130) and the first and second hydrogen barrier layers (191; 195, 295, 395), wherein the plurality of data lines (DL) bypass or extend around the through-hole (TH). [7] The display device (100, 200, 300, 400, 500) according to any one of claims 1 to 6, wherein the first hydrogen barrier layer (191) and the second hydrogen barrier layer (195, 295, 395) are electrically groundless. [8] The display device (300, 400, 500) according to claim 1, further comprising: a second planarization layer (126) disposed on the first planarization layer (125) and covering the second hydrogen barrier layer (195, 395); and a third hydrogen barrier layer (399, 499) arranged on the second planarization layer (126), wherein the third hydrogen barrier layer (399, 499) surrounds the dam (DAM) and overlaps with at least a portion of the second hydrogen barrier layer (195, 395), wherein the second planarization layer (126) has a second contact hole (C2, C2') surrounding the dam (DAM), and wherein the second hydrogen barrier layer (195, 395) is in contact with the third hydrogen barrier layer (399, 499) via the second contact hole (C2, C2'). [9] The display device (400, 500) according to claim 8, wherein the second contact hole (C2') has a plurality of second contact holes (C2'). [10] The display device (300, 400, 500) according to claim 8 or 9, wherein the third hydrogen barrier layer (399, 499) comprises titanium (Ti). [11] The display device (300, 400, 500) according to any one of claims 8 to 10, wherein the first hydrogen barrier layer (191), the second hydrogen barrier layer (195, 395) and the third hydrogen barrier layer (399, 499) are electrically groundless. [12] The display device (300, 400, 500) according to claim 11, wherein a width of the third hydrogen barrier layer (399, 499) is greater than both a width of the second hydrogen barrier layer (195, 395) and a width of the first hydrogen barrier layer (191). [13] The display device (500) according to claim 12, wherein the first contact hole (C1') has a plurality of first contact holes (C1') and the second contact hole (C2') has a plurality of second contact holes (C2'), and wherein a number of the plurality of second contact holes (C2') is greater than a number of the plurality of first contact holes (C1'). [14] Display device (100, 200, 300, 400, 500) according to one of claims 1 to 13, further comprising: a plurality of structures (PT) arranged between the first hydrogen barrier layer (191) and the dam (DAM) and between the dam (DAM) and the through-hole (TH), wherein the plurality of structures (PT) comprise a same material as the first hydrogen barrier layer (191) or the second hydrogen barrier layer (195, 295, 395). [15] The display device (100, 200, 300, 400, 500) according to claim 14, wherein each of the plurality of structures (PT) comprises: a first layer (PT1); a second layer (PT2) arranged on the first layer (PT1), the second layer (PT2) having a bottom surface that is smaller than an upper surface of the first layer (PT1); and a third layer (PT3) arranged on the second layer (PT2), wherein the third layer (PT3) has a bottom surface that is larger than an upper surface of the second layer (PT2). [16] Display device (100, 200, 300, 400, 500) comprising: a plurality of subpixels (SP) arranged in a display area (AA) of a substrate (110); a through-hole (TH) in a non-display region (NA2) of the substrate (110); a first hydrogen barrier layer (191) surrounding the through-hole (TH); a first planarization layer (125) disposed on the first hydrogen barrier layer (191) and covering the first hydrogen barrier layer (191); a second hydrogen barrier layer (195, 295, 395) disposed on the first planarization layer (125) and surrounding the through-hole (TH); a first contact hole (C1, C1') in the first planarization layer (125) surrounding the through-hole (TH), wherein the first hydrogen barrier layer (191) is connected to the second hydrogen barrier layer (195, 295, 395) via the first contact hole (C1). [17] The display device (200, 500) according to claim 16, wherein the first contact hole (C1') has a plurality of first contact holes (C1'), and the first hydrogen barrier layer (191) is connected to the second hydrogen barrier layer (295, 395) via the plurality of first contact holes (C1'). [18] The display device (100, 200, 300, 400, 500) according to claim 16 or 17, wherein the first hydrogen barrier layer (191) and the second hydrogen barrier layer (195) cover a side surface of the first planarization layer (125). [19] Display device (300, 400, 500) according to one of claims 16 to 18, further comprising: a second planarization layer (126) disposed on the first planarization layer (125) and covering the second hydrogen barrier layer (195, 395); a third hydrogen barrier layer (399, 499) disposed on the second planarization layer (126) and surrounding the through-hole (TH); and a second contact hole (C2, C2') in the second planarization layer (126) surrounding the through-hole (TH), wherein the second hydrogen barrier layer (195, 395) is connected to the third hydrogen barrier layer (399, 499) via the second contact hole (C2, C2'). [20] The display device (400, 500) according to claim 19, wherein the first contact hole (C1') has a plurality of first contact holes (C1') and the first hydrogen barrier layer (191) is connected to the second hydrogen barrier layer (395) via the plurality of first contact holes (C1'), or wherein the second contact hole (C2') has a plurality of second contact holes (C2') and the third hydrogen barrier layer (499) is connected to the second hydrogen barrier layer (195) via the plurality of second contact holes (C2'). [21] The display device (300, 400, 500) according to claim 19 or 20, wherein the first hydrogen barrier layer (191), the first contact hole (C1, C1') and the second hydrogen barrier layer (195, 395) form a wall structure having a closed loop shape or a ring shape. [22] Display device (300, 400, 500) according to one of claims 19 to 21, further comprising: a plurality of data lines (DL) arranged in the display area (AA) of the substrate (110), wherein the first hydrogen barrier layer (191) and the second hydrogen barrier layer (195, 395) are dummy data lines comprising a same material as the plurality of data lines (DL). [23] The display device (300, 400, 500) according to claim 22, wherein the dummy data lines are stacked one above the other as concentric rings around the through-hole (TH).

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