HOUSING AND SEMICONDUCTOR MODULE WITH ONE HOUSING
The groove and chamfered edge design in the housing addresses the adhesive application challenges in semiconductor modules, ensuring a stable and sealed bond between the housing and substrate, enhancing the module's structural integrity.
Patent Information
- Application Number
- DE102024123645
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-08-19
- Publication Date
- 2026-02-19
AI Technical Summary
Conventional semiconductor module assemblies face challenges in securely bonding the housing to the substrate due to issues with adhesive application, leading to potential gaps and leaks, which compromise the interface with the heat sink and affect the module's integrity.
A housing design with a groove in the side walls featuring chamfered edges that guides adhesive application, ensuring a stable bond by allowing excess adhesive to be contained within the groove, regardless of the amount applied, thus sealing the interface effectively.
The groove design ensures a secure and reliable attachment of the housing to the substrate, minimizing gaps and leaks, enhancing the adhesion and sealing capabilities, thereby improving the module's structural integrity and preventing adhesive overflow.
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Abstract
Description
TECHNICAL AREA
[0001] The present disclosure relates to a housing and a semiconductor module with a housing. BACKGROUND
[0002] Power semiconductor module assemblies often contain at least one substrate housed in a package. Each of these substrates hosts a semiconductor array with multiple controllable semiconductor elements (e.g., two IGBTs in a half-bridge configuration) or non-controllable semiconductor elements (e.g., arrays of diodes). Each substrate typically has a substrate layer (e.g., a ceramic layer), a first metallization layer applied to one side of the substrate layer, and (optionally) a second metallization layer applied to the other side of the substrate layer. The controllable semiconductor elements are, for example, mounted on the first metallization layer. The package can be bonded to the substrate in such a way that the substrate forms one of the package's base surfaces.When bonding the substrate to the package, it is essential to ensure that sufficient adhesive is applied to create a strong bond and seal any gap between the two. Conversely, applying too much adhesive to either the substrate or the package can cause excess adhesive to be squeezed out of the package towards the underside of the semiconductor module. This is generally undesirable, as it can compromise the interface between the substrate and any heat sink to which the module is attached.
[0003] There is a need for a housing for a semiconductor module assembly that can be securely bonded to a substrate. OVERVIEW
[0004] A housing for a semiconductor module according to embodiments of the disclosure comprises side walls, wherein the side walls extend horizontally around an internal volume of the housing, wherein the housing includes a groove formed in a bottom surface of the side walls and extending along a circumference of the housing, wherein the bottom surface of the side walls is configured to be attached to a substrate or base plate, wherein the groove extends in a vertical direction into the side walls of the housing, the groove includes a first section with a constant width in a horizontal direction, and the groove between the first section and the bottom surface of the side walls includes chamfered edges, wherein the chamfered edges define a second section arranged between the first section and the bottom surface of the side walls and having a width that varies in the horizontal direction.the width of the second section gradually increases from the first section towards the underside of the side walls.
[0005] A semiconductor module according to embodiments of the disclosure comprises the housing, a substrate or base plate, and an adhesive bond. The adhesive bond is arranged in the groove, with a surface of the adhesive bond facing the outside of the groove being flush with the underside of the side walls. The substrate or base plate contacts the underside of the side walls and the surface of the adhesive bond facing the outside of the groove.
[0006] A method for assembling a semiconductor module according to embodiments of the disclosure includes forming a drop of adhesive on the chamfered edges of the groove of the housing, arranging the housing on a substrate or base plate, wherein arranging the housing on the substrate or base plate includes pressing the housing against the substrate or base plate until the substrate or base plate touches the underside of the housing, thereby pressing the drop of adhesive into the groove.
[0007] The invention can be better understood with reference to the following drawings and description. The components in the figures are not necessarily to scale; rather, the emphasis is placed on illustrating the principles of the invention. Furthermore, identical reference numerals in the figures denote identical parts in the different views. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a cross-sectional view of a semiconductor module where the package is glued to a substrate. Fig. 2, the Fig. 2A and Fig. Figure 2B contains cross-sectional views of sections of substrates glued to a side wall of a conventional enclosure. Fig. Figure 3 is a cross-sectional view of a section of a housing according to embodiments of the disclosure. Fig. Figure 4 schematically shows exemplary dimensions of a groove formed in a housing according to embodiments of the disclosure. Fig. Figure 5 schematically shows a cross-sectional view of a section of a substrate glued to a housing, according to embodiments of the disclosure. Fig. Figure 6 schematically shows a cross-sectional view of a section of a substrate glued to a housing, according to embodiments of the disclosure. Fig. Figure 7 schematically shows a three-dimensional view of a section of a housing according to embodiments of the disclosure. Fig. Figure 8 schematically shows a bottom view of a housing according to embodiments of the disclosure. DETAILED DESCRIPTION
[0008] The following detailed description refers to the accompanying drawings. The drawings show specific examples in which the invention can be implemented. It is understood that the features and principles described in relation to the various examples can be combined with one another, unless expressly stated otherwise. In the description and in the claims, designations of certain elements as "first element," "second element," "third element," etc., are not to be understood as enumerative. Rather, such designations merely serve to name different "elements." That is to say, for example, that the presence of a "third element" does not require the presence of a "first element" and a "second element."An electrical conductor or electrical connection, as described here, can be a single electrically conductive element or at least two single electrically conductive elements connected in series and / or parallel. Electrical conductors and electrical connections can contain metal and / or semiconductor material and can be permanently electrically conductive (i.e., non-switchable). A semiconductor body, as described here, can be made of (doped) semiconductor material and can be a semiconductor chip or contained within a semiconductor chip. A semiconductor body has electrically connecting pads and contains at least one semiconductor element with electrodes.
[0009] Referring to Fig. Figure 1 shows a cross-sectional view of a semiconductor module 100. The semiconductor module 100 comprises a package 7 and a substrate 10. The substrate 10 includes a dielectric insulating layer 11, a (structured) first metallization layer 111 attached to the dielectric insulating layer 11, and a (structured) second metallization layer 112 attached to the dielectric insulating layer 11. The dielectric insulating layer 11 is located between the first and second metallization layers 111 and 112.
[0010] Each of the first and second metallization layers 111, 112 can consist of or contain one of the following materials: copper; a copper alloy; aluminum; an aluminum alloy; any other metal or alloy that remains solid during operation of the power semiconductor module assembly. The substrate 10 can be a ceramic substrate, that is, a substrate in which the dielectric insulating layer 11 is a ceramic, e.g., a thin ceramic layer. The ceramic can contain or consist of one of the following materials: aluminum oxide, aluminum nitride, zirconium oxide, silicon nitride, boron nitride, or any other dielectric ceramic. The dielectric insulating layer 11 can, for example, consist of or contain one of the following materials: Al₂O₃, AlN, SiC, BeO, or Si₃N₄. The substrate 10 can, for example, be...The substrate 10 can be a Direct Copper Bonding (DCB) substrate, a Direct Aluminum Bonding (DAB) substrate, or an Active Metal Brazing (AMB) substrate. Furthermore, the substrate 10 can be an insulated metal substrate (IMS). An insulated metal substrate generally has a dielectric insulating layer 11 containing (filled) materials such as epoxy resin or polyimide. The material of the dielectric insulating layer 11 can, for example, be filled with ceramic particles. Such particles can be, for example, SiO2, Al2O3, AlN, or BN and can have a diameter between approximately 1 µm and approximately 50 µm. The substrate 10 can also be a conventional printed circuit board (PCB) with a non-ceramic dielectric insulating layer 11. For example, a non-ceramic dielectric insulating layer 11 can consist of or contain a cured resin.
[0011] The substrate 10 can be arranged in a housing 7. In the case of the Fig. In the example shown, the substrate 10 itself forms a base surface of the housing 7, while the housing 7 itself only has side walls and a cover. Such power semiconductor modules are often referred to as base-less modules. The cover of the housing 7 is generally optional and can also be omitted.
[0012] One or more semiconductor bodies 20 can be arranged on the substrate 10. Each of the semiconductor bodies 20 arranged on the substrate 10 can contain a diode, an IGBT (insulated-gate bipolar transistor), a MOSFET (metal-oxide-semiconductor field-effect transistor), a JFET (junction field-effect transistor), a HEMT (high-electron-mobility transistor), or any other suitable controllable or non-controllable semiconductor element.
[0013] One or more semiconductor bodies 20 can form a semiconductor array on the substrate 10. In Fig. Figure 1 shows only two semiconductor bodies 20 as examples. The second metallization layer 112 of the substrate 10 in Fig. 1 is a continuous layer. The first metallization layer 111 is in the Fig. In the example shown, a structured layer is present. "Structured layer" means that the first metallization layer 111 is not a continuous layer, but contains voids between different sections of the layer. Such voids are in Fig. Figure 1 is shown schematically. The first metallization layer 111 in this example contains four different sections. Different semiconductor bodies 20 can be mounted on the same or different sections of the first metallization layer 111. Different sections of the first metallization layer may not have an electrical connection or may be electrically connected to one or more other sections, e.g., using bond wires 3. Electrical connections 3 may also include, for example, connection plates or busbars, to name just a few examples. The one or more semiconductor bodies 20 may be electrically and mechanically connected to the substrate 10 by an electrically conductive bonding layer 30. Such an electrically conductive bonding layer may be a solder layer, a layer of an electrically conductive adhesive, or a layer of sintered metal powder, e.g.,a sintered silver powder.
[0014] The in Fig. The semiconductor module 100 shown in Figure 1 further includes terminal elements 4. The terminal elements 4 are electrically connected to the first metallization layer 111 and establish an electrical connection between the inside and outside of the housing 7. The terminal elements 4 can be electrically connected to the first metallization layer 111 at a first end 41, while a second end 42 of the terminal elements 4 protrudes from the housing 7. The terminal elements 4 can be electrically contacted from the outside at their second end 42. The terminal elements 4 are shown in Figure 1. Fig. The connection elements 4 shown in Figure 1 are only examples. Connection elements 4 can be implemented in any other way and can be arranged in any other position. For example, one or more connection elements 4 can be arranged close to or adjacent to the side walls of the housing 7. Any other suitable embodiment is possible. The connection elements 4 can, for example, consist of or contain a metal such as copper, aluminum, gold, silver, or any alloys thereof. The connection elements 4 can be electrically and mechanically connected to the substrate 10 by an electrically conductive bonding layer (not specifically shown for the connection elements 4). Such an electrically conductive bonding layer can generally be a solder layer, a layer of an electrically conductive adhesive, or a layer of a sintered metal powder, e.g., a sintered silver powder.According to other examples, connecting elements 4 can be inserted into hollow sleeves that are attached to the substrate 10 (sleeves are in . Fig. 1 not specifically shown).
[0015] Conventional semiconductor modules 100 generally contain an encapsulation or potting compound 5. The potting compound 5 may, for example, consist of or contain a cross-linked silicone gel, or it may be a rigid molding compound. The potting compound 5 may at least partially fill the interior of the housing 7, thereby covering the components and electrical connections arranged on the substrate 10. The terminal elements 4 may be partially embedded in the potting compound 5. However, at least their second ends 42 are not covered by the potting compound 5 and protrude through the housing 7 from the potting compound 5 to the outside of the housing 7. The potting compound 5 is designed to protect the components and electrical connections within the semiconductor module 100, particularly within the housing 7, from certain environmental conditions and mechanical damage.
[0016] At the in Fig. In the example shown, the package 7 is arranged on the substrate 10 such that the substrate 10 forms a base for the package 7. In such semiconductor modules, often also referred to as base-less modules, the package 7 is typically bonded to the substrate 10 to maintain it in a desired position relative to the substrate 10. An adhesive bond 32 (adhesive layer) between the package 7 and the substrate 10 is often sufficient to hold the package 7 in its desired position relative to the substrate 10. The adhesive bond 32 also seals the package 7 so that the material used to form a potting compound 5 cannot escape from the package 7 before it has sufficiently cured (cross-linked).
[0017] Conventional enclosures 7 often have a wide recess or cutout 700 in the underside of the side walls of the enclosure 7, as in the Fig. 2A and Fig. 2B is shown schematically. Fig. 2A and Fig. Figure 2B schematically shows cross-sectional views of section A of a semiconductor module as shown in Fig. 1. The underside of the side walls is the side that, in the assembled state of the semiconductor module, is attached to the substrate 10. The adhesive 32, used to attach the housing 7 to the substrate 10, is located in the recess or notch 700. Generally, there is a risk that if too small an amount of adhesive 32 is applied to the housing 7 (i.e., into the recess or notch 700), the bond between the housing 7 and the substrate 10 will not be strong enough to adequately attach the housing 7 to the substrate 10. This is because, if too small an amount of adhesive 32 is applied, the adhesive 32 may not protrude sufficiently from the recess or notch 700, so that it does not reach the substrate 10 at all, or such that only a very small contact area is formed between the adhesive 32 and the substrate 10 when the housing 7 is positioned on the substrate 10.This is in . Fig. 2A schematically illustrates this. In this case, there is also a risk that material used to form the potting compound 5 will leak out of the housing 7, as a gap between the housing 7 and the substrate 10 may not be adequately sealed along the entire circumference of the housing 7. Conversely, if too much adhesive 32 is applied to the housing 7, there is a risk that some of the adhesive 32 will be squeezed out of the recess or indentation when the housing 7 is positioned on the substrate 10. This is in Fig. Figure 2B is shown schematically. The application of the adhesive 32 to the housing 7 is generally subject to certain tolerances. Therefore, it may not always be possible to apply the correct amount of adhesive 32.
[0018] A housing 7 according to embodiments of the disclosure has side walls, wherein the side walls extend horizontally around an inner volume of the housing 7. The housing 7 further has a groove 702 formed in a bottom surface of the side walls and extending along a circumference of the housing 7, wherein the bottom surface of the side walls is configured to be attached to a substrate 10.The groove 702 extends from the underside in a vertical direction y into the side walls of the housing 7 and has a first section 702a with a constant width w702a in a horizontal direction and further has chamfered edges 704 between the first section 702a and the underside of the side walls, wherein the chamfered edges 704 define a second section 702b which is arranged between the first section 702a and the underside of the side walls and has a width w702b that varies in the horizontal direction, wherein the width w702b of the second section 702b gradually increases from the first section 702a towards the underside of the side walls.
[0019] The chamfered edges 704 form contact surfaces for a drop of adhesive 32, which is applied to the housing 7 to attach the housing 7 to the substrate 10. This is shown schematically in Fig. Figure 3 shows a schematic cross-section of section A of a semiconductor module, as shown in Fig. The adhesive droplet 32 rests on the chamfered edges 704 of the groove 702 before the housing 7 is positioned on the substrate 10. When the housing 7 is positioned on the substrate 10, the adhesive 32 is pressed into the first section 702a of the groove 702, as shown in Figure 1. Fig. 5 is shown schematically. Fig. Figure 5 schematically shows a cross-sectional view of section A of a semiconductor module as in Fig. 1. When the housing 7 is in its final mounting position on the substrate 10, the adhesive bond 32 extends from the underside of the side walls in the vertical direction (y) into the groove 702, with a maximum thickness d32 of the adhesive bond 32 in the vertical direction y being less than a depth h702 of the groove 702 in the same direction. That is, not the entire groove 702 is filled with adhesive 32.
[0020] An adhesive 32, used to attach a housing 7 to a substrate 10, generally has a specific viscosity and does not flow, or at least not significantly, into the groove 702 on its own. It is only forced further into the groove 702 when the housing 7 is pressed onto the substrate 10. When the housing 7 is pressed onto the substrate 10, pressure is also exerted on the adhesive 32. The chamfered edges 704 guide the adhesive 32 toward the first section 702a, which provides a reservoir for excess adhesive 32. The second section 702b, defined by the chamfered edges 704, is comparatively flat. That is, the contact surfaces onto which the adhesive 32 is applied are located relatively close to the underside of the side walls.The risk that a substrate 10 will not come into contact with the adhesive 32 at all, or that an insufficient contact area will form between the substrate 10 and the adhesive 32, is thus considerably reduced. Even when only a small amount of adhesive 32 is applied, the substrate 10 still comes into contact with the adhesive 32, and a stable bond is formed between the housing 7 and the substrate 10. Similarly, when a large amount of adhesive 32 is applied, a stable bond is formed between the housing 7 and the substrate 10, and excess adhesive 32 is forced into the first section 702a of the groove 702 when the housing 7 is pressed onto the substrate 10. All disadvantages described above with respect to conventional housings 7 are thus overcome. The groove 702, as described in relation to... Fig. As described in 3, it further provides a larger contact area between the adhesive 32 and the housing 7, which further increases the adhesion between the housing 7 and the substrate 10.
[0021] Now, with reference to Fig. Four exemplary dimensions of a groove 702 of a housing 7 according to embodiments of the disclosure are schematically illustrated. According to embodiments of the disclosure, the width w702a of the first section 702a can be between 0.6 and 0.8 mm. A total depth h702 of the groove 702 in the vertical direction y can be at least 1.0 mm. A certain minimum depth h702 of the groove 702 is generally required to provide a sufficiently large reservoir for excess adhesive 32. Conversely, a greater depth h702 is generally not disadvantageous, since the adhesive 32 is only pressed into the groove 702 until the substrate 10 contacts the underside of the housing 7. That is, a groove 702 may not be completely filled with adhesive 32 when the semiconductor module is fully assembled. Sections of the groove 702 (i.e., of the first section 702a) may remain free of adhesive 32.This does not affect the overall function of the semiconductor module in any way. For example, the depth h702b of the second section 702b in the vertical direction y can be between 0.1 and 0.3 mm. The maximum width w702b of the second section 702b on the underside of the side walls can be between 1.1 and 1.3 mm. This results in a contact area between the adhesive 32 and the substrate 10 that is sufficiently large to securely attach the housing 7 to the substrate 10.
[0022] The difference between the width w702a of the first section 702a and the maximum width w702b of the second section 702b on the underside of the housing 7 can be between 0.1 and 0.3 mm. This means that the chamfered edges 704 can extend from the side walls of the groove 702 at an angle between 20° and 70° towards the underside of the side walls of the housing 7. This angle can be identical for both chamfered edges 704 of the groove 702. However, it is also generally possible for one of the two chamfered edges 704 to be steeper than the other. For example, the chamfered edge 704 that is closer to the inner volume of the housing 7 can be steeper than the chamfered edge that is farther from the inner volume, or vice versa. The width w702a of the first section 702a is defined by the distance between the opposite side walls of the groove 702.The width w32 of the adhesive droplet 32 applied to the groove 702 can be equal to or less than the maximum width w702b of the second section 702b on the underside of the side walls. That is, according to some examples, the width w32 of the adhesive droplet 32 can be equal to or less than 1.1 and 1.3 mm. In this way, the adhesive 32 is completely pressed into the groove 702, and it is prevented that adhesive is forced out of the groove 702 and between the underside of the housing 7 and the substrate 10.
[0023] As in Fig. As shown schematically in Figure 8, the groove 702 can extend along the entire circumference of the housing 7. In this way, the housing 7 can be securely attached to the substrate 10, and any gap between the housing 7 and the substrate 10 can be completely sealed by means of a drop of adhesive 32 formed in the groove 702 along the entire circumference of the housing 7. The dimensions of the groove 702 can be constant along the entire circumference of the housing 7. However, it is also possible for the groove 702 to have different segments along the circumference of the housing 7, and for at least one of the dimensions of a segment to differ from the dimensions of one or more of the other segments. For example, the groove 702 can have a different depth h702 in different segments.Additionally or alternatively, the dimensions of the second section 702b, as defined by the chamfered edges 704, can differ for different segments of the groove 702. For example, the chamfered edges 704 can be steeper in some sections and shallower in others. By way of example, the groove 702 can have a first set of segments of a first type and a second set of segments of a second type, with the segments of the first type and the segments of the second type arranged alternately along the circumference of the housing 7. At least one of the dimensions of the segments of the first type can differ from the respective dimension of the segments of the second type. It is also possible that there are even more than two different types of segments.
[0024] If a drop of adhesive 32 is arranged along the entire circumference of the housing 7 on the groove 702, and the adhesive 32 is then pressed further into the groove 702 when the housing 7 is mounted on the substrate 10, there may be no way for air to escape from the groove 702 (i.e., from the first section 702a). Therefore, the housing 7 may still have at least one ventilation hole 706 extending from the groove 702 through the housing 7 to the outside of the housing 7. This is shown schematically in Fig. Figure 6 shows a schematic cross-sectional view of section A of a semiconductor module as shown in Fig. Figure 1 represents. Each ventilation hole 706, of which at least one ventilation hole 706 is present, provides an opening from the first section 702a of the groove 702 to the outside air. In this way, when the adhesive 32 is pressed into the groove 702 along the entire circumference of the housing 7, air can escape from the first section 702a of the groove 702. The number of ventilation holes 706 generally depends on the dimensions of the housing 7 and the groove 702. In some cases, a single (exactly one) ventilation hole 706 may be sufficient. In other cases, more than one ventilation hole 706 may be required. In the case described in Figure 1, the ventilation hole 706 is provided by a single ventilation hole 706. Fig. In the example shown in Figure 6, the ventilation hole 706 extends from the groove 702 in the vertical direction y through the housing 7. However, this is only one example. In general, it is also possible for a ventilation hole 706 to extend horizontally from the groove 702 to the outside of the housing 7. It is also possible for a ventilation hole 706 to have both vertical and horizontal sections. Even diagonal sections are generally possible. An opening of the ventilation hole 706 can be located at one end of the groove 702, facing away from the underside of the housing 7. This ensures that the opening of the ventilation hole 706 is not blocked by adhesive 32 and that air can escape freely from the groove 702.
[0025] Fig. Figure 7 schematically shows a three-dimensional underside view of a section of a housing 7 according to embodiments of the disclosure. In this view, a ventilation hole 706 is visible. The underside view of Fig. The housing 7 shown in Figure 8 has a total of six ventilation holes 706, arranged at various positions along the groove 702. According to one example, a housing 7 has at least one ventilation hole 706 in each side wall of the housing 7. It is also possible for a ventilation hole 706 to be arranged in each of several corners of a housing 7. According to another example, ventilation holes 706 are arranged at regular intervals along the circumference of the housing 7.
[0026] Ventilation holes 706 can have a round cross-section, as shown in the Fig. 7 and Fig.Figure 8 is shown schematically. However, this is only an example. Ventilation holes 706 can generally have any suitable cross-section, such as oval, square, triangular, polygonal, etc. For example, a round ventilation hole 706 can have a diameter equal to or smaller than the width w702a of the first section 702a of the groove 702. As an example, the diameter of a round ventilation hole 706 can be between 0.1 and 0.8 mm.
[0027] In the various examples described above, a housing according to embodiments of the disclosure is attached to a substrate 10 of a baseplateless semiconductor module. In semiconductor modules having a baseplate, the baseplate generally forms a bottom of the housing 7, and one or more substrates 10 are arranged on the baseplate and within the housing 7. In a semiconductor module having a baseplate, the housing can be bonded to the baseplate instead of to the substrate 10. The general principles described above can be similarly applied to housings 7 attached to baseplates. Such housings can have similar dimensions or can be somewhat larger compared to housings 7 of baseplateless semiconductor modules. The exemplary dimensions of the groove 702 outlined above can be suitably adapted for larger housings 7.For example, the depth and width of the first section 702a of the groove 702 may be the same as or greater than the exemplary dimensions shown above.
[0028] A semiconductor module 100 according to embodiments of the disclosure comprises a housing 7 as described above, a substrate 10 or a base plate, and an adhesive bond 32. The adhesive bond 32 is arranged in the groove 702, with a surface of the adhesive bond 32 facing the outside of the groove 702 being flush with the underside of the side walls. The substrate 10 or the base plate contacts the underside of the side walls and the surface of the adhesive bond 32 facing the outside of the groove 702. According to some embodiments, the adhesive bond 32 extends from the underside of the side walls in the vertical direction y into the groove 702, with a maximum thickness d32 of the adhesive bond 32 in the vertical direction y being less than a depth h702 of the groove 702 in the same direction.
[0029] A method for assembling a semiconductor module 100 according to embodiments of the disclosure includes forming an adhesive droplet 32 on the chamfered edges 704 of the groove 702 of a housing 7 as described above, arranging the housing 7 on a substrate 10 or a base plate, wherein arranging the housing 7 on the substrate 10 or the base plate includes pressing the housing 7 against the substrate 10 or the base plate until the substrate 10 or the base plate touches the underside of the housing 7, thereby pressing the adhesive droplet 32 into the groove 702.
Claims
[1] Housing (7) for a semiconductor module (100) having side walls, wherein the side walls extend horizontally around an internal volume of the housing (7), wherein the housing (7) has a groove (702) formed in an underside of the side walls and extending along a circumference of the housing (7), the underside of the side walls being designed to be attached to a substrate (10) or a base plate, the groove (702) extends in a vertical direction (y) into the side walls of the housing (7), the groove (702) has a first section (702a) with a constant width (w702a) in a horizontal direction, and the groove (702) has chamfered edges (704) between the first section (702a) and the underside of the side walls, wherein the chamfered edges (704) define a second section (702b) which is arranged between the first section (702a) and the underside of the side walls and has a width (w702b) that varies in the horizontal direction, wherein the width (w702b) of the second section (702b) gradually increases from the first section (702a) towards the underside of the side walls. [2] The housing (7) according to claim 1, wherein the width (w702a) of the first section (702a) is between 0.6 and 0.8 mm. [3] Housing (7) according to claim 1 or 2, wherein the depth (h702) of the groove (702) in the vertical direction (y) is at least 1.0 mm. [4] Housing (7) according to any one of claims 1 to 3, wherein a depth (h702b) of the second section (702b) in the vertical direction (y) is between 0.1 - 0.3 mm. [5] Housing (7) according to one of the preceding claims, wherein a maximum width (w702b) of the second section (702b) on the underside of the side walls is between 1.1 and 1.3 mm. [6] Housing (7) according to claim 5, wherein the difference between the width (w702a) of the first section (702a) and the maximum width (w702b) of the second section (702b) on the underside of the housing (7) is between 0.1 and 0.3 mm. [7] Housing (7) according to one of the preceding claims, which further comprises at least one ventilation hole (706) extending from the groove (702) through the housing (7) to an outside of the housing (7). [8] Housing (7) according to claim 7, which has at least one ventilation hole (706) in each side wall of the housing (7). [9] Semiconductor module (100) comprising: a housing (7) according to any one of claims 1 to 8; a substrate (10) or a base plate; and an adhesive joint (32), wherein the adhesive joint (32) is arranged in the groove (702), with one facing outwards the surface of the adhesive joint (32) directed towards the groove (702) is flush with the underside of the side walls, and the substrate (10) or the base plate is the underside of the side walls and the The outer surface of the groove (702) touches the oriented surface of the adhesive bond (32). [10] Semiconductor module (100) according to claim 9, wherein the adhesive joint (32) extends from the underside of the side walls in the vertical direction (y) into the groove (702), wherein a maximum thickness (d32) of the adhesive joint (32) in the vertical direction (y) is less than a depth (h702) of the groove (702) in the same direction. [11] Method for assembling a semiconductor module (100) comprising: Forming an adhesive droplet (32) on the chamfered edges (704) of the groove (702) of a housing (7) according to any one of claims 1 to 9, Arranging the housing (7) on a substrate (10) or a base plate, wherein the arrangement of the housing (7) on the substrate (10) or the base plate comprises: Press the housing (7) against the substrate (10) or base plate until the substrate (10) or base plate touches the underside of the housing (7), thereby pressing the adhesive droplet (32) into the groove (702).
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