Power semiconductor module with a substrate having a substrate longitudinal mirror plane

Abstract

A power semiconductor module is presented comprising a first substrate having a substrate longitudinal mirror plane, a first substrate conductor track having a normal direction, a second substrate conductor track, and two, preferably immediately adjacent, first power semiconductor devices arranged on the second substrate conductor track, wherein at least two of the selection “first substrate conductor track, second substrate conductor track, position of the two first power semiconductor devices” are designed symmetrically to the substrate longitudinal mirror plane.

Description

[0001] The invention describes a power semiconductor module with a first substrate having a substrate mirror plane, a first substrate conductor track, a second substrate conductor track, and two, preferably immediately adjacent, first power semiconductor devices arranged on the second substrate conductor track, wherein at least two of the selection first substrate conductor track, second substrate conductor track, position of the two first power semiconductor devices are symmetrical to the substrate longitudinal mirror plane.

[0002] DE 20 2017 006 900 U1 discloses a power electronic switching device with a substrate comprising a first conductor track section on which a plurality of first power semiconductor devices are arranged in series in a first direction and first contact surfaces of these power semiconductor devices are electrically connected to the first conductor track section, wherein this first conductor track section is configured to carry a first load current of a first load potential in the first direction, and which comprises a second conductor track section on which a plurality of second power semiconductor devices are arranged in series in the first direction and first contact surfaces of these power semiconductor devices are electrically connected to the second conductor track section, wherein this second conductor track section is configured to carry a second load current of the first load potential in the first direction.which has a third conductor track section arranged between the first and second sections and running parallel to them, which is designed to carry a control current of a control potential.

[0003] In light of the aforementioned circumstances, the invention is based on the objective of providing a symmetrical power semiconductor module with a substrate having a substrate mirror plane, in which inductances are reduced and electrical switching is improved.

[0004] This problem is solved according to the invention by a power semiconductor module with a first substrate having a substrate longitudinal mirror plane, a first substrate conductor track having a normal direction, a second substrate conductor track, and with two, preferably immediately adjacent, first power semiconductor devices arranged on the second substrate conductor track, wherein at least two from the selection • first substrate conductor track • second substrate conductor track • The position of the first two power semiconductor components is symmetrical to the substrate longitudinal mirror plane.

[0005] It is preferred if the substrate is enclosed by a frame-like molded body, preferably on all sides.

[0006] It may also be preferred if a load connection element, preferably connected to the shaped body, or preferably a plurality of load connection elements, has a load connection element that is completely or at least has external connection surfaces that are symmetrical to the substrate longitudinal mirror plane.

[0007] It can be advantageous if the mutually facing edges of the first power semiconductor devices enclose an angle between 25° and 45° with the substrate longitudinal mirror plane.

[0008] It may also be preferable to arrange two second power semiconductor devices on a third substrate conductor track.

[0009] It may also be preferred if the third substrate conductor track is symmetrical to the substrate longitudinal mirror plane.

[0010] Furthermore, it can be advantageous if the position of the two second power semiconductor components is symmetrical to the substrate longitudinal mirror plane.

[0011] It is preferred if the mutually facing edges of the second power semiconductor devices enclose an angle between 30° and 45° with the substrate longitudinal mirror plane.

[0012] It may also be preferred if the first power semiconductor devices and the second power semiconductor devices are arranged symmetrically to a substrate transverse mirror plane that is orthogonal to the substrate longitudinal mirror plane.

[0013] It can also be advantageous if the fourth substrate conductor tracks are arranged symmetrically to the substrate longitudinal mirror plane.

[0014] It can be advantageous if the fourth substrate conductor tracks are arranged symmetrically with respect to the substrate transverse mirror plane relative to the second substrate conductor tracks.

[0015] It can be advantageous if a second substrate is designed analogously to the first substrate and both substrates are arranged symmetrically to a module longitudinal mirror plane that runs parallel to the substrate longitudinal mirror plane in the space between the two substrates.

[0016] It can be advantageous if both substrates are arranged within a single molded body.

[0017] It can also be advantageous if the shaped body is symmetrical to the longitudinal axis of the substrate.

[0018] It is preferred if a plurality of auxiliary connection elements, preferably connected to the molded body, are arranged symmetrically to the longitudinal axis of the substrate.

[0019] It may also be preferred if a load connection element, preferably connected to the molded body, or preferably a plurality of load connection elements, has a load connection element that is completely or at least has external connection surfaces that are symmetrical to the module longitudinal mirror plane.

[0020] Of course, unless explicitly or per se excluded or contrary to the idea of ​​the invention, the features or groups of features mentioned in the singular, for example the substrate, can be present multiple times in the power semiconductor module according to the invention.

[0021] It is understood that the various embodiments of the invention, whether mentioned in connection with the power semiconductor module or with the method, can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the combinations specified, but also in other combinations or individually, without departing from the scope of the present invention.

[0022] Further explanations of the invention, advantageous details and features, will become apparent from the following description of the invention contained in the Fig. 1 to 6 schematically illustrated embodiments of the invention, or of respective parts thereof. Fig. Figure 1 shows a first, a second substrate and a substrate mirror plane of a power semiconductor module according to the invention in a top view. Fig. Figure 2 shows a shaped body of a power semiconductor module according to the invention with connection elements and metal bodies in a top view. Fig. Figure 3 shows a top view of a power semiconductor module according to the invention. Fig. Figure 4 shows a first substrate with connection devices in detail of a power semiconductor module according to the invention in a top view. Fig. Figure 5 shows a shaped body and a substrate longitudinal mirror plane of a power semiconductor module according to the invention in a three-dimensional view.

[0023] Fig. Figure 1 shows a first embodiment of a first and second symmetrical substrate 3, 300 of a power semiconductor module 1 according to the invention in a top view. The first and second substrates 3, 300 are spaced apart from each other in the x-direction. The first substrate 3 has commercially available first, second, third, fourth, and fifth substrate conductor tracks 30, 32, 34, 36, 38 made of copper, also spaced apart from each other. The second substrate 300 is configured analogously to the first substrate 3, i.e., it corresponds to the structure of the first substrate 3.

[0024] Both the first and second substrates 3,300 (shown here only on the second substrate 300 for clarity) have a substrate longitudinal mirror plane A1 that runs centrally across both substrates 3,300 in the y-direction. The components of the substrates 3,300 are therefore mirror-symmetrical. Furthermore, a module longitudinal mirror plane A2, which runs parallel to the substrate mirror plane A1, is arranged in the space between the two substrates 3,300. The two substrates 3,300 are thus arranged symmetrically, i.e., at uniform distances from the module longitudinal mirror plane A2.

[0025] The first substrate trace 30, here DC+, is located above the third substrate trace 34, here AC trace, in the y-direction. The third substrate trace 34 is located below the second substrate trace 32, here TOP-Side. The first substrate trace 30 surrounds the second substrate trace 32. The fourth substrate trace 36, here DC-, surrounds the first and third substrate traces 30 and 34 in a frame-like manner. The fifth substrate trace 38, here BOT-Side, is surrounded by the third substrate trace 34 in a frame-like manner. All substrate traces 30, 32, 34, 36, and 38 are symmetrical about the substrate longitudinal mirror plane A1.

[0026] The second substrate conductor track 34 has a first section (not shown) on which a first connection element 5, for example an AC press pin, can be arranged in the positive z-direction. The first section is located approximately in the center of the first substrate 3. Parallel to the first section, in the y-direction, a second section (also not shown) for a second connection element 6, for example a gate press pin of the top side, is arranged on the second substrate conductor track 32. The second section is also located in the center of the second substrate conductor track 32. The two connection elements 5 and 6 are materially bonded and electrically conductive to their respective sections in the arranged state; see also [reference to be added]. Fig. 3. A connection element 5,6, for example a gate-press pin of the BOT-Side, can also be arranged on a section (not shown) of the fifth substrate conductor track 38, which is parallel to the second substrate conductor track 32 in the y-direction.

[0027] The fourth substrate conductor track 36 further comprises a third section, not shown, which is designed to allow a metal body, for example as a DC connector, to be arranged in the z-direction and connected to the substrate conductor track 36 in a material-bonded, electrically conductive manner; see also Fig. 2. The fourth substrate conductor track 36 can alternatively have more than one third section.

[0028] On the first substrate conductor track 30, two first power semiconductor devices 40,42 and on the fourth substrate conductor track 34, two second power semiconductor devices 44,46, here designed as IGBTs, are arranged side by side in the y-direction at the lower edge of the respective substrate conductor track 30,34, symmetrically spaced apart from each other to the substrate longitudinal mirror plane A1, and are connected to the corresponding substrate conductor tracks 30,34 by sintering in a materially bonded manner.

[0029] The first and second power semiconductor devices 40, 42, 44, 46 are arranged, by way of example, rotated relative to the outer surfaces of the substrate 3. Furthermore, the facing edges of the first and second power semiconductor devices 40, 42, 44, 46 form an angle of 45° with the substrate longitudinal mirror plane A1. Alternatively, the first power semiconductor devices 40, 42 can form an angle between 25° and 45° with the substrate longitudinal mirror plane A1, and the second power semiconductor devices 44, 46 can form an angle between 30° and 45°.

[0030] The first power semiconductor devices 40, 42 on the first substrate conductor track 30 are arranged parallel to the second power semiconductor devices 44, 46 on the third substrate conductor track 38. Alternatively, the power semiconductor devices 40, 42, 44, 46 can also be arranged directly next to each other, without a substrate conductor track in between.

[0031] Alternatively, the power semiconductor devices 40, 42, 44, 46 can also be soldered onto the substrate trace. Furthermore, the respective connections can also be formed as another type of metallurgical bond, such as an adhesive bond. The power semiconductor devices 40, 42, 44, 46 can also be configured as MOSFETs.

[0032] The two power semiconductor devices 44, 46 on the first substrate conductor track 30 are each connected to the fourth substrate conductor track 34 by two bonding devices 420, here exemplified as bonding strips, in a materially bonded and electrically conductive manner. The bonding strips 420 are spaced apart from each other and extend towards the first section on the third substrate conductor track 34. The two second power semiconductor devices 44, 46 on the third substrate conductor track 34 are also connected to the third substrate conductor track 36 by two bonding devices 420, also designed as bonding strips, in a materially bonded and electrically conductive manner. The two bonding strips 420 of the second power semiconductor devices 44, 46 on the fourth substrate conductor track 36 are arranged parallel to the bonding devices 382 on the third substrate conductor track 34 and also extend towards each other.The connecting devices 420 are also symmetrical to the substrate mirror plane A1 and of the same length away from it.

[0033] The power semiconductor components 40,42,44,46 of the corresponding substrates 3,300 are further electrically connected to the second and fifth substrate conductor tracks 32,38 by means of a connecting device 422, not shown here for clarity.

[0034] The first power semiconductor devices 40, 42 are connected to the second substrate conductor track 32, and the second power semiconductor devices 44, 46 are connected to the fifth substrate conductor track 38. The connection devices 422 are designed as bond wires or, alternatively, as bond tapes. Only one of the first or second power semiconductor devices 40, 42, 44, 46 can be connected to the corresponding substrate conductor tracks 32, 38.

[0035] The material-bonded connection of the connecting devices 420, 422 with the substrate conductor tracks 30, 34 is shown here as an example of a welded connection using a laser welding process. Furthermore, the material-bonded connection can also be achieved by soldering, bonding, or sintering.

[0036] The second substrate 300 corresponds to the structure of the first substrate 3 and therefore has the first, second, third, fourth and fifth substrate conductor tracks 30, 32, 36, 38, a first section for a first connection element 5, a second section for a second connection element 6 and four power semiconductor devices 40, 42, 44, 46 with connecting devices 420, 422.

[0037] The second substrate 300 differs from the first substrate 3 in that it has a fourth section (not shown), which, however, corresponds to the third section in structure, shape, and arrangement. The second substrate 300 is also arranged symmetrically to the first substrate 3, such that the third section is located on the fourth substrate conductor track 36 of the first substrate 3 and the fourth section is located on the fourth substrate conductor track 36 of the second substrate 300, adjacent to each other in the x-direction, in order to electrically connect the two substrates 3, 300 to each other by means of the metal body. Here, too, the substrate conductor tracks, the power semiconductor components, and the connection devices are designed and arranged symmetrically to the substrate longitudinal mirror plane A1, as with the first substrate 3.

[0038] Fig. Figure 2 shows an embodiment of a frame-like molded body 2, shown here hatched, of a power semiconductor module 1 according to the invention with auxiliary connection elements 5, 6 and metal bodies, in a top view, wherein the molded body 2 is symmetrical to the module's longitudinal mirror plane A2. Viewed in the y-direction, the molded body 2 has a first frame section 20 and a second frame section 22 opposite it. The molded body 2 further has an upper and a lower frame section in the x-direction, which connect the frame sections 20, 22 arranged in the y-direction. The four outer frame sections 20, 22 together form a cuboid, rectangular frame.

[0039] The first and second frame sections 20, 22 are connected to each other by two intersecting webs 24 arranged in the x-direction, which are located between the upper and lower outer frame sections. The molded body 2 also has a third web 26 in the x-direction, which is located centrally between the first and second frame sections 20, 22 and also connects the upper and lower frame sections.

[0040] Frame sections 20, 22 and webs 24, 26 are made of a plastic material, for example by injection molding, and are formed in one piece. They create a kind of grid, so that there are open spaces between the frame sections and webs, which can be filled with a silicone gel, for example. Alternatively, these open spaces can be filled with another filler or left unfilled.

[0041] Furthermore, frame sections 20, 22 and the webs 24, 26, or the webs themselves, can also be formed in two parts, i.e., from two or more components. They can be made of the same material, for example, plastic, or alternatively from different materials. The frame sections 20, 22 and the web, or the webs 24, 26, can be connected to each other, for example, by means of a snap-fit ​​connection, so that they also form a grid-like arrangement. Alternatively, they can also be connected by a material-bonded connection such as adhesive bonding. In this configuration as well, the resulting open areas can be filled with a filler material such as silicone.

[0042] Alternatively, the frame-like body 2 can also have only two frame sections 20,22 and one web 24,26 or more than two webs 24,26.

[0043] The molded body 2 has ten auxiliary connection elements 5, 6 designed as commercially available press pins for electrical contact. These auxiliary connection elements 5, 6 are connected to the webs 24 of the molded body 2 via a mounting section (not shown). The auxiliary connection elements 5, 6 are enclosed by the material of the molded body 2. This connection is also produced by injection molding, as an example.

[0044] The auxiliary connection elements 5, 6 are arranged here such that five can be assigned to each substrate 3, 300. The arrangement of the auxiliary connection elements 5, 6 of the first substrate 3 is symmetrical in the x-direction to the arrangement of the auxiliary connection elements 5, 6 of the second substrate 300. The upper outer frame section of the molded body 2, viewed in the y-direction, has, for example, two spaced-apart projections, each with an auxiliary connection element 5, 6. On the central webs 24, two groups of auxiliary connection elements, each consisting of a first auxiliary connection element 5 and a second auxiliary connection element 6, are arranged.

[0045] Each auxiliary connection element 5, 6 has an electrically conductive contact section 40, 50, here made of copper, which is arranged on the respective substrate conductor track of the respective substrate 3, 300. These contact sections 50, 60 are therefore not arranged on the molded body 2 and extend from the web 24 to the substrate conductor track. The contact section 50 of the first auxiliary connection element 5 is directed towards the upper outer frame section, and the second contact section 60 of the second auxiliary connection element 6 is directed towards the lower frame section.

[0046] There may also be more or fewer than the connection elements 4, 5 shown. The connection elements 4, 5 may also be arranged individually and offset from one another on the molded body 3.

[0047] This design allows the connection elements 5,6 to be arranged close together, thus ensuring fast electrical switching.

[0048] The shaped body 2 also has two spaced-apart metal bodies arranged one above the other in the y-direction for electrically contacting the two substrates 3, 300. Each of the two metal bodies has a third contact section (not shown) which is metallurgically connected to an associated third section of the third substrate conductor track 36 of the first substrate 3. Each metal body also has a fourth contact section (not shown) which is metallurgically connected to a fourth section of the third substrate conductor track 36 of the second substrate 300. The metallurgical connections are shown here by way of example using a welding process. The two metal bodies are shown here as U-shaped and made of copper. Each metal body also has a third mounting section (not shown) which is connected to a section of the central web 26.The positive-locking connection is also formed by injection molding during the production of the molded body 2.

[0049] The mounting sections of the connecting elements are shown here as an example of a positive-locking connection to the webs 24, 26. Alternatively, the connection between the webs 24, 26 and the mounting sections can also be designed as a force-fit or material-fit connection.

[0050] The shaped body 2 can alternatively have only one metal body or more than two metal bodies. The third and fourth contact sections can also be connected to the same substrate conductor track of a substrate 3,300. Furthermore, the third and fourth contact sections can each be connected to a metallization area of ​​a power semiconductor device.

[0051] Fig. Figure 3 shows a top view of a power semiconductor module 1 according to the invention. The power semiconductor module 1 has the component shown in Figure 3. Fig. 1 described first and second substrate 3,300, shown here as dotted lines, on as well as the in Fig. The shaped body 2, as described in section 2, is arranged on the two substrates 3,300 when viewed in the normal direction N, i.e., in the z-direction, and surrounds them in a frame-like manner, here completely. The two substrates 3,300 are therefore arranged within the shaped body 2. The shaped body 2 can be connected to the substrates 3,300 by force, form, or material connection. The central web 26 is located in the space between the two substrates 3,300, on the longitudinal mirror plane A2 of the module. Furthermore, the respective auxiliary connection elements 5, 6, as well as their contact surfaces 50, 60, are arranged on the longitudinal mirror planes A1 of the respective substrates.

[0052] Fig. Figure 5 shows a further embodiment of the first substrate 3 with connecting devices 420, 422 in detail of a power semiconductor module 1 according to the invention in a top view. Here, too, the first substrate 3 has a longitudinal substrate mirror plane A1, which runs centrally on the substrate 3 in the x-direction. In addition, the first substrate 3 has a transverse substrate mirror plane A3, which runs orthogonally, i.e., centrally, to the substrate 3 in the y-direction. The longitudinal substrate mirror plane A1 and the transverse substrate mirror plane A3 therefore intersect at the center of the substrate 3.

[0053] Furthermore, the first substrate 3 has a first substrate conductor track 30 on which, viewed in the y-direction normal direction N, two first power semiconductor devices 40, 42 are arranged to the left side of the substrate mirror longitudinal plane A1 and electrically connected to it. A second substrate conductor track 32 is arranged between these two 40, 42. The two first power semiconductor devices 40, 42 are electrically connected to the fifth substrate conductor track 38 by means of two bonding devices, here bond strips 422, by means of a material bond, here by laser welding. The two power semiconductor devices 40, 42 are connected as in Fig. As described in section 1, the substrates are also arranged twisted towards the outside of the substrate 3. Alternatively, the material-bonded connection can also be formed by gluing, sintering or soldering.

[0054] The detailed illustration shows a part of the second substrate conductor track 32 and a part of the first power semiconductor device 40,42 arranged to the left of the second substrate conductor track 32 in the x-direction. The second substrate conductor track 32 is electrically conductive and metallurgically connected to the power semiconductor device 40 by means of a connecting device, here designed as a bond wire 384.

[0055] The first power semiconductor devices 40, 42 and the first and second substrate conductor tracks 30, 32 are arranged symmetrically to the substrate mirror longitudinal plane A1. Viewed in the x-direction to the right side of the substrate mirror longitudinal plane A1, there is therefore a further second substrate conductor track 32, as well as a second first power semiconductor device 40, 42 with connecting devices 420, 422, which correspond analogously to the arrangement on the left side of the substrate mirror longitudinal plane A1.

[0056] On the fifth substrate conductor track 38, there is a third substrate conductor track 34, which is symmetrically arranged with respect to the substrate mirror longitudinal plane A1. On this third substrate conductor track 34, two spaced-apart power semiconductor devices 44, 42 are arranged to the left of the substrate mirror longitudinal plane A1, with a fourth substrate conductor track 36 located between them and electrically connected to this fourth substrate conductor track 36. Symmetrically to this, further second power semiconductor devices 44, 46 are also arranged on the right side with a fourth substrate conductor track 36 located between them and the substrate mirror longitudinal plane A1. The second power semiconductor devices 44, 46 are each electrically connected to the first substrate conductor track 30 by two connection devices, in this case two bond strips 422.

[0057] The second power semiconductor devices 44, 46 on the third substrate conductor track 34 are arranged symmetrically with respect to the substrate transverse mirror plane A3. They are therefore mirror-symmetrical to the first power semiconductor devices 40, 42 located above them in the y-direction.

[0058] The substrate conductor tracks are like... Fig. Sections for contacting auxiliary connection elements 5, 6 with their contact sections 50, 60 are described in Figure 1, although not shown. The illustration of further connection devices 422, 424, such as bond wires or bond strips, has also been omitted for clarity.

[0059] Fig. Figure 6 shows a further embodiment of a shaped body 2 with auxiliary connection elements 5, 6 and a first substrate 3 of a power semiconductor module 1 according to the invention, having a substrate longitudinal mirror plane A1, in a three-dimensional view. The substrate longitudinal mirror plane A1 runs in the y-direction and is, viewed in the x-direction, centered on, i.e., in the z-direction, the first substrate 3.

[0060] The shaped body 2 differs from the shaped body 2 made of Fig. 2 such that it has a first and second frame section 20, 22 as well as two webs 24 which converge at the respective frame section 20, 22 to form a web section and connect the two frame sections 20, 22 to each other. The shaped body 2 is symmetrical about the substrate longitudinal mirror plane A1.

[0061] The shaped body 2 is designed to enclose the first substrate 3 in a frame-like manner. The upper web 24, viewed in the y-direction, has two pairs of auxiliary connection elements 5, 6. In addition to the two pairs, a single auxiliary connection element 5 is also arranged on the lower web 24. Both the pairs and the single auxiliary connection element 5, 6 are spaced apart from each other in the x-direction on the two webs 24 symmetrically with respect to the substrate's longitudinal plane A1, with the pairs of the two webs 24 being arranged parallel to each other and the single auxiliary connection element 5 being located on the lower web 24 between the two pairs. In the sections where the auxiliary connection elements 5, 6 are arranged, the webs 24 have a different profile compared to the webs 24, 26. Fig.The first contact sections 50 of the first auxiliary connection elements 5 point in the positive y-direction, whereas the second contact sections 60 of the second auxiliary connection elements 6 point in the negative y-direction. Furthermore, the shaped body 2 has four metal bodies 702 for electrical contact.

[0062] The shaped body 2 also features load connection elements 70, 72, 74 for external contact, here made of copper. Their connection surfaces 700, 720, 740 are symmetrical to the substrate longitudinal mirror plane A1. Reference symbol list 1 Power semiconductor module 2 molded bodies 20 first framework section 22 second framework section 24 Steg 26 Bridge 3 first substrate 30 first substrate conductor 32 second substrate conductor 34 third substrate conductor 36 fourth substrate conductor 38 fifth substrate conductor 300 second substrate 40 first power semiconductor device 42 first power semiconductor device 44 second power semiconductor device 46 second power semiconductor device 420 Connecting device, bonding band 442 Connecting device, bond wire 5 first connection element 50 first contact section 6 second connection element 60 second contact section 70 first load connection element 700 connection area 702 Metal bodies 72 second load connection element 720 connection area 74 third load connection element 740 connection area A1 Substrate mirror plane A2 Module longitudinal mirror plane A3 Substrate mirror plane N Normal direction QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 20 2017 006 900 U1

[0002]

Claims

[1] Power semiconductor module (1) comprising a first substrate (3) having a substrate longitudinal mirror plane A1, a first substrate conductor track (30) having a normal direction (N), a second substrate conductor track (32), and two, preferably immediately adjacent, first power semiconductor devices (40, 42) arranged on the second substrate conductor track, wherein at least two of the selection • first substrate conductor track (30) • second substrate conductor track (32) • The position of the first two power semiconductor components (40,42) is symmetrical to the substrate longitudinal mirror plane (A1). [2] Power semiconductor module according to claim 1, wherein the substrate is enclosed by a frame-like shaped body (2), preferably on all sides. [3] Power semiconductor module according to claim 1 or 2 wherein a load connection element, preferably connected to the shaped body (2), or preferably a plurality of load connection elements, which are completely or at least their external connection surfaces are formed or arranged symmetrically to the substrate longitudinal mirror plane (A1). [4] Power semiconductor module according to one of the preceding claims, wherein the mutually facing edges of the first power semiconductor devices (40,42) enclose an angle between 25° and 45° with the substrate longitudinal mirror plane (A1). [5] Power semiconductor module according to one of the preceding claims, wherein two second power semiconductor devices 44,46 are arranged on a third substrate conductor track 34. [6] Power semiconductor module according to claim 5, wherein the third substrate conductor track 34 is symmetrical to the substrate longitudinal mirror plane A1. [7] Power semiconductor module according to claim 5 or 6, wherein the position of the two second power semiconductor components 44,46 is symmetrical to the substrate longitudinal mirror plane A1. [8] Power semiconductor module according to one of claims 5 to 7, wherein the mutually facing edges of the second power semiconductor devices 44,46 enclose an angle between 30° and 45° with the substrate longitudinal mirror plane A1. [9] Power semiconductor module according to one of claims 5 to 8, wherein the first power semiconductor devices 40,42 and the second power semiconductor devices 44,46 are arranged symmetrically to a substrate transverse mirror plane A3 which is orthogonal to the substrate longitudinal mirror plane A1. [10] Power semiconductor module according to one of claims 5 to 9, wherein the fourth substrate conductor tracks 36 are arranged symmetrically to the substrate longitudinal mirror plane A1. [11] Power semiconductor module according to claim 10, wherein the fourth substrate conductor tracks 36 are arranged symmetrically with respect to the substrate transverse mirror plane A3 to the second substrate conductor tracks 32. [12] Power semiconductor module according to one of the preceding claims, wherein a second substrate 300 is designed analogously to the first substrate 3 and both substrates 3,300 are arranged symmetrically to a module longitudinal mirror plane A2, which runs parallel to the substrate longitudinal mirror plane A1 in the space between the two substrates 3,300. [13] Power semiconductor module according to claim 12, wherein both substrates are arranged within a molded body 2. [14] Power semiconductor module according to claim 13, wherein the shaped body 2 is symmetrical to the module longitudinal mirror plane A2. [15] Power semiconductor module according to claim 13 or 14, wherein a plurality of auxiliary connection elements 5,6, preferably connected to the molded body 2, are arranged symmetrically to the module longitudinal mirror plane A2. [16] Power semiconductor module according to one of claims 13 to 15, wherein a load connection element 70, preferably connected to the shaped body 2, or preferably a plurality of load connection elements 70, 72, 74, which are completely or at least their external connection surfaces 700, 720, 740 are formed or arranged symmetrically to the module longitudinal mirror plane A2.

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