METHOD FOR MANUFACTURING A COMPONENT FOR A LITHOGRAPHING PLANT

Abstract

Method for manufacturing a component (200) for a lithography system (1), wherein the component (200) has an outer surface (212) and one or more internal cavities (204) with an inner surface (214), comprising the steps: a) Determining (S2) a first weight (G1) of the component (200), b) Removal (S3) of a material (218) of the component (200) from its outer and inner surfaces (212, 214) in a liquid bath (308), c) Determining (S4) a second weight (G2) of the component (200'), and d) Determining (S5) a thickness (d) of the material removal (218) based on the first and second determined weight (G1, G2) of the component (200, 200').

Description

[0001] The present invention relates to a method for manufacturing a component for a lithography system.

[0002] Microlithography is used to manufacture microstructured components, such as integrated circuits. The microlithography process is carried out using a lithography system, which includes an illumination system and a projection system. The image of a mask (reticule) illuminated by the illumination system is projected by the projection system onto a substrate, such as a silicon wafer, coated with a photosensitive layer (photoresist) and positioned in the image plane of the projection system. This transfers the mask structure onto the photosensitive coating of the substrate.

[0003] Driven by the pursuit of ever smaller structures in the fabrication of integrated circuits, EUV lithography systems are currently being developed that utilize light with wavelengths ranging from 0.1 nm to 30 nm, particularly 13.5 nm. Since most materials absorb light of this wavelength, such EUV lithography systems must employ reflective optics, i.e., mirrors, instead of the previously used refracting optics, i.e., lenses.

[0004] One problem that arises is that the mirrors heat up as a result of absorbing the radiation emitted by the EUV light source. This can lead to thermal deformation of the mirrors and thus to an impairment of their imaging properties.

[0005] Therefore, mirrors in an EUV lithography system are typically actively cooled, if necessary. For example, a mirror support incorporates a heat sink with cooling channels through which a coolant flows. It is desirable to manufacture such supports and other components of the lithography system in a simple manner.

[0006] Against this background, one object of the present invention is to provide an improved method for manufacturing a component of a lithography system.

[0007] According to a first aspect, a method for manufacturing a component for a lithography system is proposed. The component has an outer surface and one or more internal cavities with an inner surface. Furthermore, the method comprises the following steps: a) Determining an initial weight of the component, b) Removal of material from the component on its outer and inner surfaces in a liquid bath, c) Determining a second weight of the component, and d) Determining the thickness of the material removal based on the first and second determined weights of the component.

[0008] This allows the thickness of material removed from the outer and inner surfaces of the component to be determined simply and non-destructively. Specifically, the thickness of material removed from the outer and inner surfaces of the component is indirectly calculated from the component's initial weight (determined before material removal) and its subsequent weight (determined after material removal). In other words, the mass loss of the component due to material removal is determined, and the thickness of the material removed is calculated from this.

[0009] Directly measuring (e.g., with a micrometer or similar instrument) material removal on the inner surface of the component (i.e., on a surface formed by one or more internal cavities of the component) is generally not possible. The proposed method advantageously allows material removal to be determined even on the inner surface of the component.

[0010] The component is in particular a mechanical component of the lithography system, such as a support and / or frame.

[0011] The component is preferably a component of the projection optics of the lithography system (projection exposure system). However, the component can also be a component of the illumination system of the lithography system. The projection exposure system can be an EUV lithography system. EUV stands for "Extreme Ultraviolet" and refers to a wavelength of the working light between 0.1 nm and 30 nm, in particular 13.5 nm. The projection exposure system can also be a DUV lithography system. DUV stands for "Deep Ultraviolet" and refers to a wavelength of the working light between 30 nm and 250 nm.

[0012] The component may, for example, contain metal and / or be a metallic component.

[0013] The component has one or more internal cavities. These internal cavities, in particular, have one or more openings to an outer surface of the component. That is, the internal cavities are not sealed cavities. One could also say that the outer surface of the component directly adjoins its inner surface. The internal cavities are specifically designed in such a way that a liquid from the liquid bath can penetrate them. This allows the liquid to come into contact with the inner surface of the component in step b), enabling material to be removed from the inner surface by the liquid.

[0014] The outer surface and the inner surface are, in particular, both surfaces of the component. The outer surface is a surface freely accessible from the outside of the component. The inner surface is a surface of the component that is accessible only through one or more openings of one or more internal cavities. The inner surface is, in particular, a surface that bounds one or more internal cavities. The inner surface is, in particular, a surface of a wall that encloses one or more internal cavities.

[0015] The one or more internal cavities, for example, have one or more channels.

[0016] Because the component's material is removed in the liquid bath, material can also be removed from the component's inner surface, which is inaccessible to mechanical removal processes.

[0017] For example, the component is completely immersed in the liquid bath to remove material from its outer and inner surfaces. The outer and inner surfaces of the component are completely covered and surrounded by the liquid in the bath. Physical contact between the outer and inner surfaces of the component and the liquid in the bath leads to the removal of material from the component.

[0018] For example, a device for carrying out the procedure includes a control unit for determining the thickness of the material removal based on the first and second determined weight of the component.

[0019] The control device can be implemented in hardware and / or software. In a hardware implementation, the control device can be a standalone unit or part of a unit, for example, a computer, a microprocessor, or a control computer. In a software implementation, the control device can be a computer program, a function, a routine, part of program code, or an executable object.

[0020] For example, a device for carrying out the process includes a container for receiving a liquid in order to provide the liquid bath.

[0021] The liquid contains, for example, an electrolyte fluid and / or an acid.

[0022] Step a) is executed before step b). Furthermore, step c) can be executed, for example, after step b). Alternatively, steps b) and c) can also be executed simultaneously.

[0023] Removing material from the component can also include removing a coating. In step d), the thickness of the removed coating is then determined.

[0024] Although a method for manufacturing a component for a lithography system is described herein, it can also be used to manufacture a component for a device other than a lithography system.

[0025] According to one embodiment, the material of the component is removed chemically and / or electrochemically.

[0026] For example, the material of the component is chemically dissolved on its outer and inner surfaces, e.g., using an acid, e.g., by etching. Optionally, ultrasonic treatment of the component can also be applied to accelerate the material dissolution.

[0027] For example, the material of the component is electrochemically removed from its outer and inner surfaces using an electrolyte fluid. For example, the material is removed by the electrolytic detachment of metal ions from the outer and inner surfaces of the component.

[0028] For example, material from the component's outer and inner surfaces is removed using a chemical and / or electrochemical process. For example, material from the component's outer and inner surfaces is smoothed using a chemical and / or electrochemical process (e.g., deburred, polished, passivated).

[0029] According to another embodiment, the component has a metal, the component functions as a first electrode, at least one second electrode is provided which functions as a counter electrode, and the material of the component is removed in an electrolyte bath by applying current to the component.

[0030] Consequently, material is electrochemically removed from the surface of the component. In this process, the component acts as an anode, removing material from its surface and depositing it into the electrolyte bath in which it is immersed. For example, the positive terminal of a DC voltage source is electrically connected to the component, while the negative terminal is connected to an electrical conductor immersed in the electrolyte bath (the counter electrode, counter cathode). When a voltage is applied, a current flows from the anode to the cathode, removing metal ions from the surface of the anodic component.

[0031] For example, chemical and / or electrochemical treatment is used to smooth the outer and inner surfaces of the component (e.g., microscopically). In particular, the material removal during electrochemical treatment depends on the electric field between the electrode (anode) and the counter electrode (cathode). Since the electric field is stronger at sharp edges of the surface (e.g., burrs) than on the rest of the surface, electrochemical treatment removes (protruding) peaks, edges, burrs, and micro-roughness elevations (peaks) of the surface.

[0032] According to another embodiment, the component is weighed in step a) and / or c).

[0033] A device for carrying out the method includes, for example, a weighing device (e.g., with a scale) to weigh the component in step a) and / or c). The weighing device is, for example, configured to lift the component in order to measure its weight. The weighing device includes, for example, a suspension unit from which the component can be suspended.

[0034] For illustrative purposes only, the weighing device is configured to measure the weight of the component with an accuracy of a few grams. For example, the weighing device is configured to measure the weight of the component with an accuracy of 5 g or less, 3 g or less, 2 g or less, 1 g or less, 0.1 g or less, and / or 0.01 g or less.

[0035] Additionally or instead, the weighing device is configured, for example, to weigh (and / or carry) a component weighing 10 kg or more, 30 kg or more, 50 kg or more, and / or 100 kg or more. Additionally or instead, the weighing device is also configured, for example, to weigh a very light component weighing less than 10 kg, e.g., less than 5 kg, less than 1 kg, and / or less than 0.1 kg.

[0036] According to another embodiment, the thickness of the material removal is determined based on the first and second determined weight of the component, a pre-determined density of the component and a pre-determined area of ​​the outer and inner surfaces of the component.

[0037] The pre-determined surface area of ​​the component's outer and inner surfaces is, in particular, the total surface area of ​​the component's outer and inner surfaces. Specifically, the pre-determined surface area of ​​the component's outer and inner surfaces corresponds to the total surface area of ​​the component processed by the liquid in the liquid bath.

[0038] For example, based on the first and second determined weights of the component, a first and second mass of the component are determined accordingly. This allows the calculation of a mass difference Δm between the first and second masses of the component, where this mass difference Δm corresponds to the mass of the removed material. Furthermore, the mass of a body can be expressed as the product of its density ρ and its volume V (m = ρ · V). Assuming that the same amount and thus the same thickness of material is removed from the outer surface of the component as from its inner surface, the expected mass loss can be calculated using the following formula: Δm=Δd[mm]2∗OF[mm2]∗ρ[gmm3]

[0039] Here, Δd denotes the change in thickness of the component, p the density of the component, and OF the sum of the processed (i.e., fluid-exposed) outer and inner surface areas of the component. Assuming that the same amount and therefore the same thickness of material is removed from the outer surface of the component as from its inner surface, this means that half of the thickness change Δd of the component (Δd / 2) corresponds to both the thickness of material removed from the outer surface and the thickness of material removed from the inner surface (i.e., thickness of material removed from the outer surface = thickness of material removed from the inner surface = Δd / 2).

[0040] Since the mass difference Δm in the method is determined from the first and second determined weights of the component, the thickness change Δd of the component can be calculated using the formula above, provided the component's density and the surface area of ​​its outer and inner surfaces are known. From this, and under the aforementioned assumption, the thickness of the material removed from the outer and inner surfaces can be determined as half the thickness change Δd of the component.

[0041] If the removal of material from the component corresponds to the removal of a coating from the component, then in step d) a thickness of the removed coating is determined based on a density of the coating.

[0042] According to a further embodiment The thickness of material removal determined based on the first and second determined weight of the component is a first thickness of material removal on the outer and inner surfaces, After step b), a second thickness of the material removal is measured on the outer surface, and A third thickness of material removal on the inner surface is determined based on the first and second thicknesses.

[0043] In this embodiment, the thickness of the material removed from the outer surface (second thickness) is also measured directly. For example, the thickness of the material removed from the outer surface (second thickness) is measured directly (e.g., using a mechanical method, such as a micrometer screw or the like).

[0044] This allows verification of whether material removal is uniform across the outer and inner surfaces. In other words, it allows verification of whether the thickness of material removed on the outer surface (second thickness) corresponds to the thickness of material removed on the inner surface (third thickness) (i.e., whether both are the same and / or whether the deviation is 5% or less, 3% or less, and / or 1% or less).

[0045] The second thickness of the material removal on the outer surface is measured after step b). This also includes, for example, a measurement after step c) and / or d).

[0046] According to another embodiment, it is determined whether the third thickness of the material removal on the inner surface differs from the second thickness of the material removal on the outer surface.

[0047] According to a further embodiment, the component is immersed in the liquid bath during steps a) and c), so that a buoyant force caused by the liquid in the bath acts on the component. Furthermore, the thickness of the material removed is determined based on the first and second determined weights of the component, taking the buoyant force into account.

[0048] This allows the first and second weights of the component to be determined at the same location (namely, in the liquid bath) where the material is removed from the component. Consequently, it is not necessary to relocate the component to perform steps b) and c).

[0049] For example, in this embodiment it is also possible to perform steps b) and c) simultaneously. This enables process control of the material removal from the component.

[0050] During steps a) and c), the component is in particular completely immersed in the liquid bath, i.e., completely surrounded by the liquid, so that the component floats in the liquid.

[0051] The buoyant force is in particular a static buoyant force and / or a hydrostatic buoyant force.

[0052] The buoyant force acting on the component reduces its weight. This buoyant force is calculated as a product of the acceleration due to gravity and the density ρ. Flüssigkeit the liquid and the volume of liquid displaced by the component (which corresponds to the volume of the component when the component is completely immersed in the liquid).

[0053] According to a further embodiment, the thickness of the material removal is determined based on the determined first and second weight of the component, taking into account the buoyancy force, a pre-determined density of the component, a pre-determined density of the liquid and a pre-determined area of ​​the outer and inner surfaces of the component.

[0054] In particular, the mass loss Δ determined in the liquid can min_Flüssigkeit by removing the material from the component in step b) using the following equation: Δmin liquid=V(body after removal)[mm3]∗(ρ[gmm3]−ρliquid[gmm3]) −V(body before removal)[mm3]∗(ρ[gmm3]−ρliquid[gmm3])

[0055] In it, V(body) is designated nach_Abtrag ) the volume of the component after material removal in step b), i.e., when determining the second weight in step c). Furthermore, V(body) denotes vor_Abtrag) the volume of the component before material removal in step b), i.e. when determining the first weight in step a).

[0056] Furthermore, ρ denotes the density of the component and ρ Flüssigkeit the density of the liquid.

[0057] According to another embodiment, steps b) and c) are performed simultaneously, and / or step c) is repeated and performed simultaneously with step b).

[0058] This allows the thickness of the material removal to be monitored during the removal process.

[0059] According to a further embodiment, in step d) it is determined whether the determined thickness of the material removal corresponds to a predetermined target thickness of the material removal, and steps b) and c) are carried out until it is determined that the determined thickness of the material removal corresponds to the target thickness.

[0060] This allows monitoring of the approach to a predetermined target thickness (desired thickness) of the material removal and the achievement of the predetermined target thickness.

[0061] Furthermore, the removal of material in step b) can be stopped as soon as the predetermined target thickness is reached.

[0062] That the determined thickness of material removal corresponds to the target thickness means, for example, that the determined thickness of material removal is the same as the target thickness.

[0063] According to another embodiment, the method has the following before step a): additive manufacturing of the component using a strand of rapidly setting mass, whereby the outer and inner surfaces of the component are smoothed in step b).

[0064] Additive manufacturing allows for the automatic and rapid production of the component (e.g., based on a CAD model). However, additively manufactured components often exhibit undesirable surface roughness. This can be eliminated by removing material from the component's outer and inner surfaces in step b) (smoothing).

[0065] According to another embodiment, the component is a support and heat sink for an optical component, in particular for a mirror, of the lithography system. Furthermore, one or more internal cavities have one or more cooling channels of the heat sink.

[0066] The one or more internal cavities may also include one or more connecting cavities of the heat sink, which connect the cooling channels of the heat sink to each other.

[0067] According to another aspect, a method for manufacturing a component for a lithography system is proposed. The component has an outer surface and one or more internal cavities with an inner surface. Furthermore, the method comprises the following steps: a') Determining an initial weight of the component, b') Applying a coating to the outer and inner surfaces of the component in a liquid bath, c') Determining a second weight of the component, and d') Determining the thickness of the coating based on the first and second determined weights of the component.

[0068] This allows the thickness of the coating applied to the outer and inner surfaces of the component to be determined easily and non-destructively. Specifically, the coating thickness is indirectly calculated from the component's initial weight determined before application and its subsequent weight determined after application. In other words, the mass increase of the component due to the coating application is determined, and the thickness of the applied coating is calculated from this.

[0069] According to one embodiment of the further aspect, the thickness of the coating is determined based on the first and second determined weight of the component, a pre-determined density of the coating and a pre-determined area of ​​the outer and inner surfaces of the component.

[0070] Similar to the procedure described in the first aspect, the component can also be immersed in the liquid bath during steps a') and c') of the procedure described in the second aspect, so that a buoyant force caused by the liquid in the bath acts on the component. Furthermore, the thickness of the applied coating is determined based on the first and second determined weights of the component, taking the buoyant force into account.

[0071] Although this document describes determining the thickness of material removal or coating based on the first and second determined weights of the component and on determining a change in volume, other methods, such as CAD models, more complex computational models, or other methods that take volume changes into account, can also be used additionally or instead. This is particularly advantageous when dealing with very small and / or very complex bodies and / or when large amounts of material / coating are being applied or removed, as corners and radii of the body can then lead to sources of error.

[0072] The term "one" here is not necessarily to be understood as restricting the number to exactly one element. Rather, it can also refer to multiple elements, such as two, three, or more. Similarly, every other counter used here should not be interpreted as restricting the number to the exact number stated. Instead, numerical deviations, both higher and lower, are possible unless otherwise specified.

[0073] The embodiments and features described for the method according to the first aspect apply, mutatis mutandis, to the method according to the second aspect accordingly, and vice versa.

[0074] Other possible implementations of the invention also include combinations of features or embodiments described previously or subsequently with regard to the exemplary embodiments, even if not explicitly mentioned. In such cases, the person skilled in the art will also add individual aspects as improvements or additions to the respective basic form of the invention.

[0075] Further advantageous embodiments and aspects of the invention are the subject of the dependent claims and the exemplary embodiments of the invention described below. The invention will be explained in more detail below with reference to preferred embodiments and the accompanying figures. Fig. Figure 1 shows a schematic meridional section of a projection exposure system for EUV projection lithography; Fig. Figure 2 shows a flowchart of a process for manufacturing a component for projection lithography. Fig. 1 according to an embodiment of a first aspect; Fig. Figure 3 shows a cross-section of a [body part] produced during the process. Fig. 2 manufactured component according to one embodiment; Fig. Figure 4 shows a cross-section of the component along line IV-IV in Fig. 3; Fig. 5 illustrates a procedural step of the procedure from Fig. 2 according to an embodiment in which the weight of the component is determined; Fig. Figure 6 illustrates a further procedural step of the process from Fig. 2 according to an embodiment in which material of the component is removed from its outer and inner surfaces in a liquid bath; Fig. Figure 7 illustrates the procedural steps of the process from Fig. 2 according to a further embodiment in which the weight of the component is determined and material of the component is removed in a liquid bath; Fig. Figure 8 shows a flowchart of a process for manufacturing a component for projection lithography. Fig. 1 according to an embodiment of a second aspect; and Fig. 9 shows a view similar to Fig. 4, wherein one in the procedure from Fig. 8. A manufactured component according to one embodiment is shown.

[0076] In the figures, identical or functionally equivalent elements have been labelled with the same reference symbols, unless otherwise indicated. Furthermore, it should be noted that the representations in the figures are not necessarily to scale.

[0077] Fig. Figure 1 shows an embodiment of a projection exposure system 1 (lithography system), in particular an EUV lithography system. One embodiment of the illumination system 2 of the projection exposure system 1 has, in addition to a light or radiation source 3, an illumination optic 4 for illuminating an object field 5 in an object plane 6. In an alternative embodiment, the light source 3 can also be provided as a separate module from the rest of the illumination system 2. In this case, the illumination system 2 does not include the light source 3.

[0078] A reticule 7 arranged in the object field 5 is exposed. The reticule 7 is held by a reticule holder 8. The reticule holder 8 can be moved, particularly in a scanning direction, via a reticule displacement drive 9.

[0079] In the Fig. Figure 1 shows a Cartesian coordinate system with an x-direction x, a y-direction y, and a z-direction z. The x-direction x runs perpendicular to the plane of the drawing. The y-direction y runs horizontally, and the z-direction z runs vertically. The scan direction runs in the Fig. 1 along the y-direction y. The z-direction z runs perpendicular to the object plane 6.

[0080] The projection exposure system 1 comprises a projection optic 10. The projection optic 10 serves to image the object field 5 onto an image field 11 in an image plane 12. The image plane 12 is parallel to the object plane 6. Alternatively, an angle other than 0° between the object plane 6 and the image plane 12 is also possible.

[0081] A structure on the reticulum 7 is imaged onto a photosensitive layer of a wafer 13 located in the image plane 12 within the image field 11. The wafer 13 is held by a wafer holder 14. The wafer holder 14 can be moved, particularly along the y-direction y, via a wafer transfer drive 15. The movement of the reticulum 7 via the reticulum transfer drive 9 and of the wafer 13 via the wafer transfer drive 15 can be synchronized.

[0082] Light source 3 is an EUV radiation source. Light source 3 emits, in particular, EUV radiation 16, which is also referred to below as useful radiation, illumination radiation, or illumination light. The useful radiation 16 has a wavelength in the range between 5 nm and 30 nm. Light source 3 can be a plasma source, for example, an LPP source (Laser Produced Plasma) or a DPP source (Gas Discharged Produced Plasma). It can also be a synchrotron-based radiation source. Light source 3 can be a free-electron laser (FEL).

[0083] The illumination radiation 16 emanating from the light source 3 is focused by a collector 17. The collector 17 can be a collector with one or more ellipsoidal and / or hyperboloid reflective surfaces. The at least one reflective surface of the collector 17 can be illuminated by the illumination radiation 16 at grazing incidence (GI), i.e., with angles of incidence greater than 45°, or at normal incidence (NI), i.e., with angles of incidence less than 45°. The collector 17 can be structured and / or coated to optimize its reflectivity for the useful radiation and to suppress stray light.

[0084] After the collector 17, the illumination radiation 16 propagates through an intermediate focus in an intermediate focal plane 18. The intermediate focal plane 18 can represent a separation between a radiation source module, comprising the light source 3 and the collector 17, and the illumination optics 4.

[0085] The illumination optics 4 comprise a deflecting mirror 19 and, downstream in the beam path, a first faceted mirror 20. The deflecting mirror 19 can be a planar deflecting mirror or, alternatively, a mirror with an effect that influences the beam shape beyond the mere deflection effect. Alternatively or additionally, the deflecting mirror 19 can be designed as a spectral filter that separates a useful wavelength of the illumination radiation 16 from stray light of a different wavelength. If the first faceted mirror 20 is arranged in a plane of the illumination optics 4 that is optically conjugate to the object plane 6 as the field plane, it is also referred to as a field faceted mirror. The first faceted mirror 20 comprises a plurality of individual first facets 21, which can also be referred to as field facets. Of these first facets 21, the following are in the Fig. 1 only some examples are shown.

[0086] The first facets 21 can be designed as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or semicircular border contour. The first facets 21 can be designed as planar facets or alternatively as convexly or concavely curved facets.

[0087] As is known, for example, from DE 10 2008 009 600 A1, the first facets 21 can themselves each be composed of a plurality of individual mirrors, in particular a plurality of micromirrors. The first facet mirror 20 can in particular be designed as a microelectromechanical system (MEMS system). For details, reference is made to DE 10 2008 009 600 A1.

[0088] Between the collector 17 and the deflecting mirror 19, the illumination radiation 16 runs horizontally, i.e. along the y-direction y.

[0089] In the beam path of the illumination optics 4, a second faceted mirror 22 is arranged downstream of the first faceted mirror 20. If the second faceted mirror 22 is arranged in a pupil plane of the illumination optics 4, it is also referred to as a pupil faceted mirror. The second faceted mirror 22 can also be arranged at a distance from a pupil plane of the illumination optics 4. In this case, the combination of the first faceted mirror 20 and the second faceted mirror 22 is also referred to as a specular reflector. Specular reflectors are known from US 2006 / 0132747 A1, EP 1 614 008 B1, and US 6,573,978.

[0090] The second facet mirror 22 comprises a plurality of second facets 23. In the case of a pupil facet mirror, the second facets 23 are also referred to as pupil facets.

[0091] The second facets 23 can also be macroscopic facets, which may, for example, have round, rectangular, or hexagonal edges, or alternatively, facets composed of micromirrors. Reference is also made to DE 10 2008 009 600 A1 in this regard.

[0092] The second facets 23 can have planar or alternatively convex or concave curved reflective surfaces.

[0093] The illumination optics 4 thus form a double-faceted system. This basic principle is also known as a honeycomb condenser (English: Fly's Eye Integrator).

[0094] It can be advantageous not to arrange the second faceted mirror 22 exactly in a plane that is optically conjugate to a pupil plane of the projection optics 10. In particular, the second faceted mirror 22 can be arranged tilted relative to a pupil plane of the projection optics 10, as described, for example, in DE 10 2017 220 586 A1.

[0095] With the aid of the second faceted mirror 22, the individual first facets 21 are imaged into the object field 5. The second faceted mirror 22 is the last beam-shaping, or indeed the last, mirror for the illumination radiation 16 in the beam path before the object field 5.

[0096] In another embodiment of the illumination optics 4, not shown, a transmission optic can be arranged in the beam path between the second facet mirror 22 and the object field 5, which contributes in particular to imaging the first facets 21 into the object field 5. The transmission optic can have exactly one mirror, or alternatively two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics 4. The transmission optic can in particular comprise one or two mirrors for normal incidence (NI mirrors) and / or one or two mirrors for grazing incidence (GI mirrors).

[0097] The lighting optics 4, in the version shown in the Fig. Figure 1 shows exactly three mirrors after the collector 17, namely the deflecting mirror 19, the first faceted mirror 20 and the second faceted mirror 22.

[0098] In a further embodiment of the lighting optics 4, the deflecting mirror 19 can also be omitted, so that the lighting optics 4 after the collector 17 can then have exactly two mirrors, namely the first faceted mirror 20 and the second faceted mirror 22.

[0099] The mapping of the first facets 21 by means of the second facets 23 or with the second facets 23 and a transmission optic into the object plane 6 is regularly only an approximate mapping.

[0100] The projection optics 10 comprise a plurality of mirrors Mi, which are numbered according to their arrangement in the beam path of the projection exposure system 1.

[0101] In the Fig. In the example shown, the projection optics 10 comprise six mirrors M1 to M6. Alternatives with four, eight, ten, twelve, or any other number of mirrors Mi are also possible. The projection optics 10 is a doubly obscured optic. The penultimate mirror M5 and the last mirror M6 each have an aperture for the illumination radiation 16. The projection optics 10 has an image-side numerical aperture that is greater than 0.5 and can also be greater than 0.6, for example, 0.7 or 0.75.

[0102] The reflective surfaces of the mirrors Mi can be designed as freeform surfaces without an axis of rotational symmetry. Alternatively, the reflective surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one axis of rotational symmetry of the reflective surface shape. The mirrors Mi, like the mirrors of the illumination optics 4, can have highly reflective coatings for the illumination radiation 16. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.

[0103] The projection optics 10 has a large object-image offset in the y-direction y between a y-coordinate of a center of the object field 5 and a y-coordinate of the center of the image field 11. This object-image offset in the y-direction y can be approximately as large as a z-distance between the object plane 6 and the image plane 12.

[0104] The projection optics 10 can be anamorphic. In particular, they have different magnifications βx, βy in the x and y directions. The two magnifications βx, βy of the projection optics 10 are preferably (βx, βy) = (+ / - 0.25, + / - 0.125). A positive magnification β indicates a projection without image inversion. A negative magnification β indicates a projection with image inversion.

[0105] The projection optics 10 thus lead to a reduction in the x-direction x, that is, in the direction perpendicular to the scan direction, in a ratio of 4:1.

[0106] The projection optics 10 lead to a reduction of 8:1 in the y-direction y, that is, in the scan direction.

[0107] Other magnification ratios are also possible. Magnification ratios with the same sign and absolute value in the x and y directions (x, y), for example with absolute values ​​of 0.125 or 0.25, are also possible.

[0108] The number of intermediate image planes in the x and y directions x, y in the beam path between the object field 5 and the image field 11 can be the same or, depending on the design of the projection optics 10, different. Examples of projection optics with different numbers of such intermediate images in the x and y directions x, y are known from US 2018 / 0074303 A1.

[0109] Each of the second facets 23 is assigned to exactly one of the first facets 21 to form an illumination channel for illuminating the object field 5. This can result, in particular, in illumination according to Köhler's principle. The far field is divided into a multitude of object fields 5 with the help of the first facets 21. The first facets 21 generate a plurality of images of the intermediate focus on the second facets 23 assigned to each of them.

[0110] The first facets 21 are each superimposed on a corresponding second facet 23 to illuminate the object field 5 on the reticle 7. The illumination of the object field 5 is particularly homogeneous. It preferably exhibits a uniformity error of less than 2%. Field uniformity can be achieved by superimposing different illumination channels.

[0111] The illumination of the entrance pupil of the projection optics 10 can be geometrically defined by arranging the second facets 23. By selecting the illumination channels, in particular the subset of the second facets 23 that carry light, the intensity distribution in the entrance pupil of the projection optics 10 can be adjusted. This intensity distribution is also referred to as the illumination setting or illumination pupil filling.

[0112] Another preferred pupil uniformity in the area of ​​defined illuminated sections of an illumination pupil of the illumination optics 4 can be achieved by a redistribution of the illumination channels.

[0113] Further aspects and details of the illumination of the object field 5 and, in particular, the entrance pupil of the projection optics 10 are described below.

[0114] The projection optics 10 can, in particular, have a homocentric entrance pupil. This can be accessible. It can also be inaccessible.

[0115] The entrance pupil of the projection optics 10 cannot be precisely illuminated by the second faceted mirror 22. When the projection optics 10 image the center of the second faceted mirror 22 telecentrically onto the wafer 13, the aperture rays often do not intersect at a single point. However, a surface can be found where the pairwise determined separation of the aperture rays is minimized. This surface represents the entrance pupil or a surface conjugate to it in real space. In particular, this surface exhibits a finite curvature.

[0116] The projection optics 10 may have different entrance pupil positions for the tangential and sagittal beam paths. In this case, an imaging element, in particular an optical component of the transmission optics, should be provided between the second faceted mirror 22 and the reticle 7. This optical element can accommodate the different positions of the tangential and sagittal entrance pupils.

[0117] During the Fig. In the arrangement of the components of the illumination optics 4 shown in Figure 1, the second faceted mirror 22 is arranged in a plane conjugate to the entrance pupil of the projection optics 10. The first faceted mirror 20 is arranged tilted relative to the object plane 6. The first faceted mirror 20 is arranged tilted relative to an arrangement plane defined by the deflecting mirror 19. The first faceted mirror 20 is arranged tilted relative to an arrangement plane defined by the second faceted mirror 22.

[0118] Fig. Figure 2 shows a flow diagram of a process for manufacturing a component 200 (Fig. 3) for a lithography system 1 ( Fig. 1) according to a first aspect.

[0119] Fig. Figure 3 shows a cross-section of an exemplary component 200, which was manufactured using the method from Fig. 2 can be produced.

[0120] Component 200 is, in particular, a mechanical component of the lithography system 1. For example, component 200 is a carrier and / or support frame 202 of an optical component of the lithography system 1. Component 200 is, for example, a carrier 202 of one of the mirrors M1 to M6 of the projection optics 10 or one of the mirrors 19, 20, 22 of the illumination optics 4 of the lithography system 1.

[0121] The component 200 has one or more internal cavities 204. The one or more internal cavities 204 have, in particular, one or more openings 206 to an outer surface 208 of the component 200.

[0122] In the Fig. In the example shown, component 200 has a first internal cavity 204a in the form of a first channel and a second internal cavity 204b in the form of a second channel. Furthermore, component 200 has a third internal cavity 204c, which connects the first and second internal cavities 204a, 204b. Although in Fig. Since three cavities 204 are shown, the component 200 can also have more or fewer than three cavities 204.

[0123] Component 200, for example, is a support 202 with a heat sink 210. The heat sink 210 is specifically designed for actively cooling the optical component of the lithography system 1, which is supported by the support 202. The one or more internal cavities 204 can then, for example, have cooling channels 204a, 204b and / or cooling cavities 204c for holding a cooling fluid.

[0124] Component 200, for example, contains a metal and / or is a metallic component.

[0125] Component 200 also has an outer surface 212. The outer surface 212 can be, as in Fig. 3 and Fig. Figure 4 shows several sections 212a to 212h. The outer surface 212 is a surface of component 200 that is freely accessible from the outside 208 of component 200.

[0126] The component 200 also has an interior surface 214. The interior surface 214 is a surface of the component 200 that is only accessible via the opening(s) of one or more interior cavities 204. The interior surface 214 is, in particular, a surface of a wall 216 ( Fig. 4), which defines the one or more internal cavities 204. The internal surface 214 can be, as in Fig. Figure 3 shows several sections 214a to 214c.

[0127] Fig. Figure 4 shows a cross-section of component 200 along line IV-IV in Fig. 3. In Fig. 4 are the ones in Fig. 3 marked sections 212a and 212c of the outer surface 212 can be seen. Furthermore, in Fig. 4 Two sections 212g and 212h of the outer surface 212 of component 200 can be seen, which are in Fig. 3 are not visible.

[0128] In an optional first step S1 of the process, component 200 is additively manufactured. In particular, component 200 is additively manufactured using a strand of fast-setting material (not shown).

[0129] In a second step S2 of the procedure, a first weight G1 ( Fig. 5) of component 200 determined.

[0130] As in Fig. As shown in Figure 5, a device 300 can be used to carry out the procedure from Fig. 2, for example, includes a weighing device 302. With the weighing device 302, the component 200 can be weighed and its weight G1 determined. The weighing device 302 includes, for example, a suspension unit 304 on which the component 200 can be suspended. The weighing device 302 also includes, in particular, a scale 306.

[0131] In a third step S3 of the process, material 218 of component 200 is removed from its outer surface 212 and its inner surface 214 in a liquid bath 308.

[0132] The following describes, by way of example, the electrochemical removal of material 218 from the surfaces 212, 214 of component 200.

[0133] As in Fig. As shown in Figure 6, the device 300 can be used to carry out the procedure from Fig. 2 have a container 310 for receiving a liquid 312 to provide the liquid bath 308.

[0134] Fig. Figure 6 shows in particular a setup for the electrochemical removal of material 218 from component 200 (e.g., for electrochemical polishing of the outer surface 212 and the inner surface 214). In an electrochemical removal process, an electrolyte 314 and / or electrolyte solution 314 is used as the liquid 312. The electrolyte 314 or electrolyte solution 314 is, for example, a mixture of sulfuric acid and phosphoric acid. Furthermore, the electrolyte 314 may also contain water. The electrolyte 314 may also have a different composition.

[0135] As in Fig. As shown in Figure 6, the device 300 can have a DC power source 316 with a positive terminal 318 and a negative terminal 320. For treating the component 200 in the liquid 312 (e.g., for chemical and / or electrochemical treatment), the component 200 is electrically connected to the positive terminal 318 of the DC power source 316. In the process, the component 200 functions as a first electrode 322, in particular as an anode. Furthermore, a counter electrode 324 (cathode 324) is provided, which is electrically connected to the negative terminal 320 of the DC power source 316. The component 200, as the anode 322, and the cathode 324 are immersed in the electrolyte solution 314. When a voltage is generated with the DC power source 316, metal ions 326 are released from the outer surface 212 and the inner surface 214 ( Fig. 4) of component 200 into the electrolyte solution 314. The metal ions 326 flow (in the direction) towards the cathode 324. The voltage generated by the DC power source 316 is, for example, between 3 and 6 volts. Another voltage value can also be used.

[0136] In the enlarged section of Fig. Figure 4 shows the outer surface 212 of component 200 before the removal of material 218 in step S3. Furthermore, an outer surface 212' of component 200' after the removal of material 218 is shown with dashed lines. Additionally, a thickness d is shown. A of the material removal 218 at the outer surface 212, 212' and a thickness d I of the material removal 218 on the inner surface 214, 214' marked.

[0137] In a fourth step S4 of the procedure, a second weight G2 of component 200' is determined.

[0138] For example, the second weight G2 of component 200' is combined with the in Fig. The weighing device 302 shown in section 5 is determined. For this purpose, component 200' is removed, for example, from the liquid bath 308 ( Fig. 6) lifted out, dried and hung on the suspension unit 304 of the weighing device 302.

[0139] In a fifth step S5 of the procedure, a thickness d of the material removal 218 is determined based on the first and second determined weights G1, G2 of the component 200, 200'.

[0140] For example, based on the first and second determined weights G1, G2 of component 200, 200', a first and second mass m1, m2 is calculated accordingly ( Fig. 5) of component 200, 200'. This allows the calculation of a mass difference Δm between the first and second masses m1, m2 of component 200, 200' (Δm = m2 - m1). This mass difference Δm corresponds to the mass of the removed material 218.

[0141] Furthermore, the mass of a body can be expressed as the product of its density p and its volume V (m = p · V). Assuming that the same quantity and therefore the same thickness d, d is applied to the outer surface 212 of component 200 during the process... A material 218 is worn away as on its inner surface 214 (thickness d, d I ), the expected mass loss Δm can be calculated using the following formula: Δm=Δd[mm]2∗OF[mm2]∗ρ[gmm3]

[0142] Here, Δd denotes a change in thickness of the component 200, 200' from a first thickness D before the removal of material 218 to a second thickness D' after the removal of material 218 ( Fig. 3). Furthermore, p denotes the density of component 200 and OF ( Fig. 4) the sum of the surface areas of the processed (i.e., exposed to the liquid 312) outer and inner surfaces 212, 214 of component 200. The assumption that the same quantity and therefore the same thickness d is present on the outer surface 212 of component 200. A material 218 is worn away as on its inner surface 214 (thickness d I ), means that d = d A = d I = Δd / 2 applies.

[0143] The mass difference Δm can be determined using the method from the first and second determined weights G1, G2 of component 200, 200'. Furthermore, the density ρ of component 200 and the surface area OF of the outer and inner surfaces 212, 214 of component 200 can be pre-determined and / or be known. Consequently, the thickness change Δd of component 200 can be determined using the formula above. From this, under the aforementioned assumption, i.e., d = d A = d I = Δd / 2 applies, the thickness d of the material removal 218 can be determined.

[0144] Optionally, a thickness d2 can be added after step S3 ( Fig. 4) the material removal 218 on the outer surface 212 can be measured. For example, the thickness d2 of the material removal 218 on the outer surface 212 can be measured directly mechanically.

[0145] This allows the thickness d3 of the material removal 218 on the inner surface 214 to be derived. In particular, the thickness d3 of the material removal 218 on the inner surface 214 can be determined based on the thickness Δd, which was determined assuming equal material removal on the outer and inner surfaces 212, 214, and the directly measured thickness d2 of the material removal 218 on the outer surface 212 (d3 = Δd - d2).

[0146] For example, it can also be determined whether the thickness d3 of the material removal 218 on the inner surface 214 differs from the thickness d2 of the material removal 218 on the outer surface 212. This allows verification of whether the material removal 218 is uniform on the outer and inner surfaces 212, 214.

[0147] Although not shown in the figures, the material 218 of surfaces 212, 214 of component 200 can also be chemically removed. For example, the material 218 of component 200 can be dissolved in a liquid bath containing an acid.

[0148] In Fig. 7 is a device 400 for carrying out the method from Fig. 2 illustrated according to a further embodiment.

[0149] The device 400 enables the determination of the first and second weights K1, K2 of component 200, 200' while component 200, 200' is immersed in a liquid bath 408. This also makes it possible, for example, to monitor the process of material removal 218 from component 200, 200'.

[0150] The device 400 comprises, for example, a weighing device 402 with a suspension unit 404 and a scale 406 similar to the weighing device 302 in Fig. 5. Furthermore, the device 400 comprises a DC power source 416 with a positive terminal 418 and a negative terminal 420 similar to the DC power source 316 in Fig. 6. Component 200 is electrically connected to the positive terminal 418 and functions as anode 422 in the process. Furthermore, a counter electrode 424 (cathode 424) similar to the counter electrode 324 in Fig. 6 is provided, which is electrically connected to the negative terminal 420. The component 200 as anode 422 and the cathode 424 are immersed in a liquid 412, in particular an electrolyte solution 414. By applying a voltage with the DC source 416 to the anode 422 and the cathode 424, an electric field builds up between the anode 422 and the cathode 424 and metal ions 426 are released from the outer surface 212 and the inner surface 214 ( Fig. 4) of component 200 into the electrolyte solution 414. The metal ions 426 flow towards the cathode 424.

[0151] Component 200 is located in the liquid bath 408 not only during step S3, but also during steps S2 and S4.

[0152] In particular, during steps S2 and S4, component 200 is completely immersed in the liquid bath 408, so that its outer surface 212 and its inner surface 214 (i.e., all sections 212a to 212h of the outer surface 212 and all sections 214a to 214c of its inner surface 214) Fig. 4) are completely covered with liquid 412.

[0153] Consequently, when determining the first and second weights K1, K2 of component 200, 200' during steps S2 and S4, a buoyant force F acts. A on component 200, 200', which is subject to a weight force F G counteracts the component 200, 200'. This buoyancy force F A The thickness d of the material removal 218 is taken into account in step S5 when determining it. In particular, the thickness d of the material removal 218 is determined based on the first and second determined weights K1, K2 of component 200, 200', taking into account the buoyancy (the buoyant force F). A ) determined.

[0154] The buoyant force F A is determined by a product of the acceleration due to gravity and the density ρ Flüssigkeit The volume of liquid 412 and the volume of liquid 412 displaced by component 200 (which, when component 200 is completely immersed in liquid 412, corresponds to the volume of component 200) are given. If the density ρ Flüssigkeit If the mass loss Δ of liquid 412 is known and / or has been pre-determined, then the mass loss Δ determined in liquid 412 can be used. min-Flüssigkeit by removing material 218 from component 200 using the following equation: Δmin liquid=V(body after removal)[mm3]∗(ρ[gmm3]−ρliquid[gmm3]) −V(body before removal)[mm3]∗(ρ[gmm3]−ρliquid[gmm3])

[0155] In it, V(body) is designated nach _ Abtrag ) the volume V' of component 200' after material removal in step S3. Furthermore, V(body) denotes vor_Abtrag) the volume V of component 200 before material removal in step S3. Furthermore, ρ denotes the density of component 200 and ρ Flüssigkeit the density of the liquid 412.

[0156] Optionally, steps S3 and S4 can be performed simultaneously. In particular, step S4, determining the second weight K2, can be repeated and performed concurrently with step S3, which involves removing material 218. This allows the thickness d of the removed material 218 to be monitored during the removal process.

[0157] For example, in step S5 it can also be determined whether the determined thickness d of the material removal 218 corresponds to a predetermined target thickness d. Z of the material removal 218. Then steps S3 and S4 can be carried out until it is determined that the determined thickness d of the material removal 218 corresponds to the target thickness d. Z corresponds.

[0158] The following refers to Fig. 8 a method for manufacturing a component 500 ( Fig. 9) for a lithography system 1 according to a second aspect. The component 500 has an outer surface 512. Furthermore, the component 500 has one or more internal cavities 504 with an inner surface 514.

[0159] In an optional first step S1' of the procedure Fig. 8. Component 500 will be processed similarly to step S1 ( Fig. 2) additively manufactured.

[0160] In a second step S2' of the procedure Fig. 8. A first weight H1 of component 500 will be similar to that in step S2 ( Fig. 2) determined.

[0161] In a third step S3' of the procedure Fig. 8 A coating 518 is applied to the outer and inner surfaces 512, 514 of component 500 in a liquid bath (not shown). The liquid bath can be similar to the liquid bath 308 in Fig. 6.

[0162] In a fourth step S4' of the procedure Fig. 8 a second weight H2 of component 500' similar to step S4 ( Fig. 2) determined.

[0163] In a fifth step S5' of the procedure Fig. 8 will be a thickness d B the coating 518 is determined based on the first and second determined weights H1, H2 of component 500, 500'.

[0164] The thickness d B The coating 518 is, for example, based on the first and second determined weights H1, H2 of the component 500, 500', a pre-determined density ρ B the coating 518 and a pre-determined surface area OF ( Fig. 4) the outer and inner surfaces 512, 514 of component 500 were determined.

[0165] Although not shown in the figures, component 500, 500' can optionally be similar to the method according to the first aspect ( Fig. 2) also in the procedure according to the second aspect ( Fig. 8) during steps S2' and S4' in the liquid bath (see 308 in Fig. 6) are located such that a buoyant force caused by a liquid in the liquid bath acts on component 500, 500'. Then the thickness d B the applied coating 518 based on the first and second determined weights H1, H2 of the component 500, 500' taking into account the buoyancy force F A - analogous to the context of Fig. 7 described - to be determined.

[0166] Although the present invention has been described using exemplary embodiments, it can be modified in many ways. REFERENCE MARK LIST 1 Projection exposure system 2 Lighting system 3 light source 4 Lighting optics 5 object field 6 Object level 7 reticles 8 label holders 9 Reticle displacement drive 10 Projection optics 11 Image field 12 Image plane 13 wafers 14 wafer holders 15 wafer transfer drive 16 Lighting radiation 17 Collector 18 Intermediate focus plane 19 deflecting mirrors 20 first faceted mirror 21 first facet 22 second faceted mirror 23 second facet 200, 200' component 202 carriers 204 cavity 204a-204c cavity 206 Opening 208 Outside 210 heat sinks 212, 212' outdoor area 212a-212h Outdoor area 214, 214' Interior surface 214a-214c Interior surface 216 Wall 218 Material removal 300 device 302 Weighing device 304 Suspension unit 306 Scale 308 Liquid bath 310 containers 312 Liquid 314 Electrolyte fluid 316 DC power source 318 Positive pole 320 Negative terminal 322 Electrode 324 Electrode 400 device 402 Weighing device 404 Suspension unit 406 Scale 408 Liquid bath 412 Liquid 414 Electrolyte fluid 416 DC power source 418 Positive pole 420 Negative terminal 422 Electrode 424 Electrode 426 Metal ion 500, 500' component 504 Cavity 512 outdoor area 514 Interior surface 518 Coating d thickness d1, d2, d3 thickness d A , d B , d I thickness D, D' Thickness Δd thickness change G1, G2 Weight H1, H2 Weight I Electricity K1, K2 weight m1, m2 mass M1-M6 mirrors OF area ρ B density ρ Flüssigkeit density S1-S5 process steps S1'-S5' Process steps QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2008 009 600 A1 [0087, 0091] US 2006 / 0132747 A1

[0089] EP 1 614 008 B1

[0089] US 6,573,978

[0089] DE 10 2017 220 586 A1

[0094] US 2018 / 0074303 A1

[0108]

Claims

[1] Method for producing a component (200) for a lithography system (1), wherein the component (200) has an outer surface (212) and one or more internal cavities (204) with an inner surface (214), comprising the steps: a) determining (S2) a first weight (G1) of the component (200), b) removing (S3) a material (218) of the component (200) on its outer and inner surfaces (212, 214) in a liquid bath (308), c) determining (S4) a second weight (G2) of the component (200'), and d) determining (S5) a thickness (d) of the material removal (218) based on the first and second determined weights (G1, G2) of the component (200, 200'). [2] Method according to claim 1, wherein the material (218) of the component (200) is removed chemically and / or electrochemically. [3] Method according to claim 1 or 2, wherein the component (200) comprises a metal, the component (200) functions as a first electrode (322), at least one second electrode (324) is provided which functions as a counter electrode, and the material (218) of the component (200) is removed in an electrolyte bath (314) by applying current (I) to the component (200). [4] Method according to one of claims 1 to 3, wherein the component (200) is weighed in step a) and / or c). [5] Method according to one of claims 1 to 4, wherein the thickness (d) of the material removal (218) is determined based on the first and second determined weight (G1, G2) of the component (200, 200'), a pre-determined density (p) of the component (200) and a pre-determined surface area (OF) of the outer and inner surface (212, 214) of the component (200). [6] Method according to one of claims 1 to 5, wherein the thickness (d) of the material removal (218) determined based on the first and second determined weights (G1, G2) of the component (200, 200') is a first thickness (d1) of the material removal (218) on the outer and inner surfaces (212, 214), after step b) a second thickness (d2, d A ) of the material removal (218) on the outer surface (212) is measured, and a third thickness (d3, d I ) of the material removal (218) on the inner surface (214) is determined based on the first and second thicknesses (d1, d2). [7] Method according to claim 6, wherein it is determined whether the third thickness (d3, d1) of the material removal (218) on the inner surface (214) differs from the second thickness (d2, d A ) of the material removal (218) on the outer surface (212). [8] Method according to one of claims 1 to 7, wherein the component (200, 200') is located in the liquid bath (408) during steps a) and c), so that a buoyancy force (F A ), and the thickness (d) of the material removal (218) based on the first and second determined weight (K1, K2) of the component (200, 200') taking into account the buoyancy force (F A ) is determined. [9] Method according to claim 8, wherein the thickness (d) of the material removal (218) is determined based on the determined first and second weight (K1, K2) of the component (200, 200') taking into account the buoyancy force (F A ), a pre-determined density (ρ) of the component (200), a pre-determined density (ρ Flüssigkeit ) of the liquid (412) and a pre-determined surface area (OF) of the outer and inner surface (212, 214) of the component (200). [10] The method of claim 8 or 9, wherein steps b) and c) are carried out simultaneously, and / or step c) is repeated and carried out simultaneously with step b). [11] Method according to one of claims 8 to 10, wherein in step d) it is determined whether the determined thickness (d) of the material removal (218) corresponds to a predetermined target thickness (d Z ) of the material removal (218), and steps b) and c) are carried out until it is determined that the determined thickness (d) of the material removal (218) corresponds to the target thickness (d Z ) corresponds. [12] Method according to one of claims 1 to 11, before step a) comprising: additive manufacturing (S1) of the component (200) with the aid of a strand of rapid-setting mass, wherein the outer and inner surfaces (212, 214) of the component (200) are smoothed in step b). [13] Method according to one of claims 1 to 12, wherein the component (200) is a carrier (202) and heat sink (210) for an optical component (19, 20, 22, M1-M6), in particular for a mirror, of the lithography system (1), and the one or more internal cavities (204) have one or more cooling channels (204a, 204b) of the heat sink (210). [14] Method for producing a component (500) for a lithography system (1), wherein the component (500) has an outer surface (512) and one or more internal cavities (504) with an inner surface (514), comprising the steps: a') determining (S2') a first weight (H1) of the component (500), b') applying (S3') a coating (518) to the outer and inner surfaces (512, 514) of the component (500) in a liquid bath (308), c') determining (S4') a second weight (H2) of the component (500'), and d') Determining (S5') a thickness (d B) of the coating (518) based on the first and second determined weights (H1, H2) of the component (500, 500'). [15] A method according to claim 14, wherein the thickness (d B ) of the coating (518) based on the first and second determined weight (H1, H2) of the component (500, 500'), a pre-determined density (ρ B ) of the coating (518) and a pre-determined surface area (OF) of the outer and inner surface (512, 514) of the component (500).

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