Method for manufacturing a module for semiconductor lithography and module for semiconductor lithography

Abstract

The invention relates to a method for manufacturing a module (40) for semiconductor lithography with a base body (41.2), wherein at least one tube (42) is arranged in the base body (41.2) which penetrates the base body (41.2) at at least one point (45), comprising the following method steps: - Joining a sleeve (49.1,49.2) to the (modified) tube in the area of ​​the exit (45) of the tube (42) from the base body (41.2), - Positioning of the tube (42) in a mold for the production of the base body (41.2), - Casting the base body (41.2), - Post-processing of the base body (41.2). The invention further relates to a module (40) for semiconductor lithography comprising a base body (41.2), wherein at least one tube (42) is arranged in the base body (41.2), which penetrates the base body (41.2) at at least one point. The module (40) is characterized in that the tube (42) is enclosed without gaps by a sleeve (49.1, 49.2) of the base body (41.2).

Description

[0001] The invention relates to a method for producing a module for semiconductor lithography and a module for semiconductor lithography, in particular for a projection exposure system.

[0002] Projection exposure systems for semiconductor lithography are subject to extremely high imaging quality requirements in order to produce the desired microscopic structures with as little error as possible. In a lithography or microlithography process, an illumination system illuminates a photolithographic mask, also known as a reticle. The light passing through the mask or reflected from the mask is projected by projection optics onto a substrate (e.g., a wafer) coated with a light-sensitive layer (photoresist) and mounted in the image plane of the projection optics. This transfers the mask's structural elements to the substrate's light-sensitive coating.The requirements for positioning the image on the wafer and the intensity of the light provided by the illumination system are increasing with each new generation, resulting in a higher heat load on the optical elements.

[0003] In cases of high thermal load, it can be advantageous to use water cooling to control the temperature of certain modules, such as support frames, reference frames, or optical modules, particularly in EUV projection exposure systems, i.e., systems operated with electromagnetic radiation with a wavelength between 1 nm and 120 nm, especially at 13.5 nm. Water-cooled modules can also be used in DUV projection exposure systems, i.e., systems operated with electromagnetic radiation with a wavelength between 100 nm and 300 nm. These modules comprise fluid channels through which tempered water usually flows, thereby dissipating heat from the modules. The fluid channels are typically created by casting a line into the base body of a frame or module. For example, a line designed as a cooling coil is arranged and cast in a mold using holders.The cooling lines are often made of stainless steel due to the necessary resistance to the cooling fluid, which is usually water, whereas the base body is preferably made of aluminum or an aluminum alloy due to the desired high thermal conductivity. The process-related temperatures during casting do not lead to the melting of the cooling line, which means that a form fit, i.e. no material bond, is formed between the cooling line and the base body. This process has the disadvantage that, although the base body is shrunk onto the stainless steel cooling line during cooling in the case of aluminum due to its higher thermal expansion on the inside, a slight gap forms between the cooling line and the base frame in the outlet area due to the process. This can be explained, for example, by capillary action or surface tension.

[0004] The casting surface, especially in sand casting, cannot be cleaned, or can only be cleaned with great difficulty, to meet the specific requirements of EUV lithography. Therefore, post-processing of all surfaces is necessary for cleanliness reasons. This process has the further disadvantage that the positioning accuracy of the cooling line in the base body is subject to relatively large tolerances due to the nature of the process. Precise mechanical post-processing, particularly in the area where the cooling line exits the base body, is therefore not possible. Therefore, the possible gap and, in particular, the rough surface cannot be removed by post-processing. Therefore, the cleaning requirements cannot be met, or can only be met with considerable effort.

[0005] The object of the present invention is to provide a device that eliminates the above-mentioned disadvantages of the prior art. Furthermore, it is an object of the present invention to provide a method for manufacturing the device.

[0006] This object is achieved by a device and a method having the features of the independent claims. The subclaims relate to advantageous developments and variants of the invention.

[0007] A method according to the invention for producing a module for semiconductor lithography with a base body, wherein at least one tube is arranged in the base body and penetrates the base body at least at one point, comprises the following method steps: - Joining a sleeve to the pipe in the area where the pipe exits the base body, for example by shrinking - Positioning the tube in a casting mold to produce the base body - Casting the base body - Post-processing of the base body

[0008] The sleeve makes it possible to produce the surfaces of the module in a quality that meets the increased requirements in the field of semiconductor lithography, especially within a projection exposure system.

[0009] In a further process step, the tube can be positioned in the mold using at least one support structure. This ensures that the tube is positioned at the predetermined positions in the module's base body after the base body has been cast.

[0010] Furthermore, the tube, sleeve, and support structures can be at least partially enclosed by the melt during casting. The tube, sleeve, and support structures can penetrate the outer surfaces of the module after casting, with the protruding areas of the support structures being completely removed during reworking of the module's outer surfaces to create a surface roughness that meets the requirements for adequate cleaning.

[0011] In addition, the sleeve and support structures can be at least partially melted by the melt during casting. Ideally, the melting of the sleeve or support structures can be carried out in such a way that, on the one hand, a material bond can be created between the melt and the components, and, on the other hand, the positioning of the tubes and the sleeve can be ensured.

[0012] In a further embodiment, at least one end face of the sleeve can have a surface roughness of less than Rz 6.3, preferably less than Rz 2.5, and particularly preferably less than Rz 1.0, prior to joining to the pipe. This is useful to ensure adequate cleaning of the end face, since reworking the end face after application to the pipe always carries the risk of damaging the pipe.

[0013] In particular, the support structures and the sleeve can be made of the same material as the base body. This simplifies the bonded connection described above and can advantageously prevent cavities in the base body of the module caused by different thermal expansion coefficients of different materials.

[0014] Furthermore, after the base body has been cast, the sleeve and / or the outer surface of the housing can be at least partially reworked to create a gap-free connection between the sleeve and the base body and / or to create a surface roughness of less than Rz 6.3, preferably less than Rz 2.5, and particularly preferably less than Rz 1.0, in particular by means of a machining process. Any gap that may have occurred during casting between the housing and the sleeve, which is usually only a few tenths of a millimeter deep, can advantageously be removed by machining. This has the advantage that the entire outer surface of the housing can be gap-free and can have a sufficiently low surface roughness, as explained above.

[0015] A module according to the invention for semiconductor lithography comprising a base body, wherein at least one tube is arranged in the base body and penetrates the base body at least once, is characterized in that the tube is enclosed gap-free by a sleeve of the base body. This can be ensured, as mentioned above, by shrinking the sleeve onto the tube before casting the base body.

[0016] Furthermore, the sleeve can be enclosed by the base body without a gap. Any gap that may form between the sleeve and the base body due to capillary action between the mold and the sleeve or the surface tension of the melt can be easily removed during post-processing of the base body by removing material corresponding to the depth of the gap.

[0017] In particular, the surface of the module can have a surface roughness of less than Rz 6.3, preferably less than Rz 2.5, and particularly preferably less than Rz 1.0. This can ensure sufficient cleaning of the module for use in semiconductor lithography, particularly in a projection exposure system.

[0018] In a further embodiment, the sleeve and / or the support structures can comprise the same material as the base body, resulting in the advantages already explained above.

[0019] In the following, embodiments and variants of the invention are explained in more detail with reference to the drawings. Fig. 1 schematically shows in meridional section a projection exposure system for EUV projection lithography, Fig. 2 schematically shows in meridional section a projection exposure system for DUV projection lithography, Fig. 3a, Fig. 3b a module known from the prior art, and Fig. 4 a detail of a module according to the invention.

[0020] In the following, with reference to the Fig. 1 describes, by way of example, the essential components of a projection exposure system 1 for microlithography. The description of the basic structure of the projection exposure system 1 and its components is not intended to be limiting.

[0021] One embodiment of an illumination system 2 of the projection exposure system 1 has, in addition to a radiation source 3, an illumination optics 4 for illuminating an object field 5 in an object plane 6. In an alternative embodiment, the light source 3 can also be provided as a separate module from the rest of the illumination system. In this case, the illumination system does not include the light source 3.

[0022] A reticle 7 arranged in the object field 5 is illuminated. The reticle 7 is held by a reticle holder 8. The reticle holder 8 can be displaced, in particular in a scanning direction, via a reticle displacement drive 9.

[0023] In the Fig. 1 shows a Cartesian xyz coordinate system for explanation. The x-direction is perpendicular to the plane of the drawing. The y-direction is horizontal and the z-direction is vertical. The scanning direction is in the Fig. 1 along the y-direction. The z-direction runs perpendicular to the object plane 6.

[0024] The projection exposure system 1 comprises a projection optics 10. The projection optics 10 serves to image the object field 5 into an image field 11 in an image plane 12. The image plane 12 runs parallel to the object plane 6. Alternatively, an angle other than 0° between the object plane 6 and the image plane 12 is also possible.

[0025] A structure on the reticle 7 is imaged onto a light-sensitive layer of a wafer 13 arranged in the image plane 12 in the region of the image field 11. The wafer 13 is held by a wafer holder 14. The wafer holder 14 can be displaced, in particular along the y-direction, via a wafer displacement drive 15. The displacement of the reticle 7, on the one hand, via the reticle displacement drive 9, and the displacement of the wafer 13, on the other hand, via the wafer displacement drive 15, can be synchronized with each other.

[0026] The radiation source 3 is an EUV radiation source. The radiation source 3 emits, in particular, EUV radiation 16, which is also referred to below as useful radiation, illumination radiation, or illumination light. The useful radiation has, in particular, a wavelength in the range between 5 nm and 30 nm. The radiation source 3 can be a plasma source, for example, an LPP source (laser produced plasma) or a DPP source (gas discharged produced plasma). It can also be a synchrotron-based radiation source. The radiation source 3 can be a free-electron laser (FEL).

[0027] The illumination radiation 16 emanating from the radiation source 3 is focused by a collector 17. The collector 17 can be a collector with one or more ellipsoidal and / or hyperboloidal reflection surfaces. The at least one reflection surface of the collector 17 can be exposed to the illumination radiation 16 at grazing incidence (GI), i.e., at angles of incidence greater than 45° relative to the normal direction of the mirror surface, or at normal incidence (NI), i.e., at angles of incidence less than 45°. The collector 17 can be structured and / or coated, on the one hand, to optimize its reflectivity for the useful radiation and, on the other hand, to suppress stray light.

[0028] After the collector 17, the illumination radiation 16 propagates through an intermediate focus in an intermediate focal plane 18. The intermediate focal plane 18 can represent a separation between a radiation source module, comprising the radiation source 3 and the collector 17, and the illumination optics 4.

[0029] The illumination optics 4 comprises a deflecting mirror 19 and, downstream of this in the beam path, a first facet mirror 20. The deflecting mirror 19 can be a flat deflecting mirror or, alternatively, a mirror with a beam-influencing effect beyond the pure deflection effect. Alternatively or additionally, the deflecting mirror 19 can be designed as a spectral filter that separates a useful light wavelength of the illumination radiation 16 from stray light of a different wavelength. If the first facet mirror 20 is arranged in a plane of the illumination optics 4 that is optically conjugated to the object plane 6 as the field plane, it is also referred to as a field facet mirror. The first facet mirror 20 comprises a plurality of individual first facets 21, which are also referred to below as field facets. Of these facets 21, Fig. 1 only some examples are shown.

[0030] The first facets 21 can be designed as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or partially circular edge contour. The first facets 21 can be designed as flat facets or, alternatively, as convexly or concavely curved facets.

[0031] As is known, for example, from DE 10 2008 009 600 A1, the first facets 21 themselves can also be composed of a plurality of individual mirrors, in particular a plurality of micromirrors. The first facet mirror 20 can, in particular, be designed as a microelectromechanical system (MEMS system). For details, reference is made to DE 10 2008 009 600 A1.

[0032] Between the collector 17 and the deflecting mirror 19, the illumination radiation 16 runs horizontally, i.e. along the y-direction.

[0033] In the beam path of the illumination optics 4, a second facet mirror 22 is arranged downstream of the first facet mirror 20. If the second facet mirror 22 is arranged in a pupil plane of the illumination optics 4, it is also referred to as a pupil facet mirror. The second facet mirror 22 can also be arranged at a distance from a pupil plane of the illumination optics 4. In this case, the combination of the first facet mirror 20 and the second facet mirror 22 is also referred to as a specular reflector. Specular reflectors are known from US 2006 / 0132747 A1, EP 1 614 008 B1, and US Pat. No. 6,573,978.

[0034] The second facet mirror 22 comprises a plurality of second facets 23. In the case of a pupil facet mirror, the second facets 23 are also referred to as pupil facets.

[0035] The second facets 23 can also be macroscopic facets, which can, for example, be round, rectangular, or hexagonal, or alternatively facets composed of micromirrors. Reference is also made to DE 10 2008 009 600 A1 in this regard.

[0036] The second facets 23 can have planar or alternatively convex or concave curved reflection surfaces.

[0037] The illumination optics 4 thus form a double-faceted system. This basic principle is also known as a honeycomb condenser (fly's eye integrator).

[0038] It may be advantageous to arrange the second facet mirror 22 not exactly in a plane that is optically conjugated to a pupil plane of the projection optics 10. In particular, the pupil facet mirror 22 can be arranged tilted relative to a pupil plane of the projection optics 10, as described, for example, in DE 10 2017 220 586 A1.

[0039] With the help of the second facet mirror 22, the individual first facets 21 are imaged into the object field 5. The second facet mirror 22 is the last beam-forming mirror or actually the last mirror for the illumination radiation 16 in the beam path before the object field 5.

[0040] In a further embodiment of the illumination optics 4 (not shown), a transmission optics can be arranged in the beam path between the second facet mirror 22 and the object field 5, which transmission optics contributes in particular to the imaging of the first facets 21 into the object field 5. The transmission optics can have exactly one mirror, but alternatively also two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics 4. The transmission optics can in particular comprise one or two mirrors for normal incidence (NI mirrors, normal incidence mirrors) and / or one or two mirrors for grazing incidence (GI mirrors, grazing incidence mirrors).

[0041] The illumination optics 4 has in the version shown in the Fig. 1, after the collector 17 there are exactly three mirrors, namely the deflection mirror 19, the field facet mirror 20 and the pupil facet mirror 22.

[0042] In a further embodiment of the illumination optics 4, the deflection mirror 19 can also be omitted, so that the illumination optics 4 can then have exactly two mirrors after the collector 17, namely the first facet mirror 20 and the second facet mirror 22.

[0043] The imaging of the first facets 21 by means of the second facets 23 or with the second facets 23 and a transmission optics into the object plane 6 is usually only an approximate imaging.

[0044] The projection optics 10 comprises a plurality of mirrors Mi, which are numbered according to their arrangement in the beam path of the projection exposure system 1.

[0045] In the Fig. In the example shown in Figure 1, the projection optics 10 comprises six mirrors M1 to M6. Alternatives with four, eight, ten, twelve, or a different number of mirrors M1 are also possible. The penultimate mirror M5 and the last mirror M6 each have a passage opening for the illumination radiation 16. The projection optics 10 is a doubly obscured optic. The projection optics 10 has an image-side numerical aperture that is greater than 0.5 and can also be greater than 0.6, for example, 0.7 or 0.75.

[0046] Reflection surfaces of the mirrors Mi can be designed as freeform surfaces without a rotational symmetry axis. Alternatively, the reflection surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one rotational symmetry axis of the reflection surface shape. The mirrors Mi, like the mirrors of the illumination optics 4, can have highly reflective coatings for the illumination radiation 16. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.

[0047] The projection optics 10 has a large object-image offset in the y-direction between a y-coordinate of a center of the object field 5 and a y-coordinate of the center of the image field 11. This object-image offset in the y-direction can be approximately as large as a z-distance between the object plane 6 and the image plane 12.

[0048] The projection optics 10 can, in particular, be anamorphic. It has, in particular, different magnifications βx, βy in the x- and y-directions. The two magnifications βx, βy of the projection optics 10 are preferably (βx, βy) = (+ / - 0.25, + / - 0.125). A positive magnification β means imaging without image inversion. A negative sign for the magnification β means imaging with image inversion.

[0049] The projection optics 10 thus leads to a reduction in the ratio 4:1 in the x-direction, i.e. in the direction perpendicular to the scanning direction.

[0050] The projection optics 10 results in a reduction of 8:1 in the y-direction, i.e. in the scanning direction.

[0051] Other magnifications are also possible. Magnifications with the same sign and absolutely identical in the x and y directions, for example, with absolute values ​​of 0.125 or 0.25, are also possible.

[0052] The number of intermediate image planes in the x- and y-directions in the beam path between the object field 5 and the image field 11 can be the same or can vary depending on the design of the projection optics 10. Examples of projection optics with different numbers of such intermediate images in the x- and y-directions are known from US 2018 / 0074303 A1.

[0053] Each of the pupil facets 23 is assigned to exactly one of the field facets 21 to form a respective illumination channel for illuminating the object field 5. This can, in particular, result in illumination according to the Köhler principle. The far field is divided into a plurality of object fields 5 using the field facets 21. The field facets 21 generate a plurality of images of the intermediate focus on the pupil facets 23 assigned to them.

[0054] The field facets 21 are each imaged onto the reticle 7 by an associated pupil facet 23, superimposed on one another, to illuminate the object field 5. The illumination of the object field 5 is, in particular, as homogeneous as possible. It preferably has a uniformity error of less than 2%. Field uniformity can be achieved by superimposing different illumination channels.

[0055] By arranging the pupil facets, the illumination of the entrance pupil of the projection optics 10 can be geometrically defined. By selecting the illumination channels, in particular the subset of the pupil facets that guide light, the intensity distribution in the entrance pupil of the projection optics 10 can be adjusted. This intensity distribution is also referred to as the illumination setting.

[0056] A likewise preferred pupil uniformity in the area of ​​defined illuminated sections of an illumination pupil of the illumination optics 4 can be achieved by redistributing the illumination channels.

[0057] Further aspects and details of the illumination of the object field 5 and in particular of the entrance pupil of the projection optics 10 are described below.

[0058] The projection optics 10 can, in particular, have a homocentric entrance pupil. This can be accessible. It can also be inaccessible.

[0059] The entrance pupil of the projection optics 10 cannot usually be precisely illuminated with the pupil facet mirror 22. When the projection optics 10 images the center of the pupil facet mirror 22 telecentrically onto the wafer 13, the aperture rays often do not intersect at a single point. However, a surface can be found in which the pairwise determined distance of the aperture rays is minimized. This surface represents the entrance pupil or a surface conjugate to it in spatial space. In particular, this surface exhibits a finite curvature.

[0060] It is possible that the projection optics 10 have different entrance pupil positions for the tangential and sagittal beam paths. In this case, an imaging element, in particular an optical component of the transmission optics, should be provided between the second facet mirror 22 and the reticle 7. With the help of this optical element, the different positions of the tangential entrance pupil and the sagittal entrance pupil can be taken into account.

[0061] In the Fig. In the arrangement of the components of the illumination optics 4 shown in Figure 1, the pupil facet mirror 22 is arranged in a surface conjugated to the entrance pupil of the projection optics 10. The field facet mirror 20 is arranged tilted relative to the object plane 6. The first facet mirror 20 is arranged tilted relative to an arrangement plane defined by the deflection mirror 19.

[0062] The first facet mirror 20 is arranged tilted to an arrangement plane which is defined by the second facet mirror 22.

[0063] Fig. 2 shows a schematic meridional section of another projection exposure system 101 for DUV projection lithography, in which the invention can also be used.

[0064] The structure of the projection exposure system 101 and the principle of imaging is comparable to that in Fig. 1 described structure and procedure. Identical components are provided with a 100 Fig. 1 raised reference numerals, the reference numerals in Fig. So 2 start with 101.

[0065] In contrast to a Fig. 1, due to the longer wavelength of the DUV radiation 116 used as useful light in the range from 100 nm to 300 nm, in particular from 193 nm, refractive, diffractive and / or reflective optical elements 117, such as lenses, mirrors, prisms, cover plates and the like, can be used in the DUV projection exposure system 101 for imaging or for illumination.The projection exposure system 101 essentially comprises an illumination system 102, a reticle holder 108 for receiving and precisely positioning a reticle 107 provided with a structure, by means of which the later structures on a wafer 113 are determined, a wafer holder 114 for holding, moving and precisely positioning this wafer 113 and a projection lens 110 with a plurality of optical elements 117, which are held via mounts 118 in a lens housing 119 of the projection lens 110.

[0066] The illumination system 102 provides DUV radiation 116 required for imaging the reticle 107 on the wafer 113. A laser, a plasma source, or the like can be used as the source for this radiation 116. The radiation 116 is shaped in the illumination system 102 via optical elements such that the DUV radiation 116 has the desired properties regarding diameter, polarization, wavefront shape, and the like when it strikes the reticle 107.

[0067] The structure of the subsequent projection optics 101 with the lens housing 119 does not differ in principle from that in Fig. 1 and is therefore not described further.

[0068] Fig. Figure 3a shows a module 30 known from the prior art and designed as a cooling jacket, as it is in a Fig. 1. The module 30 is manufactured by a casting process, whereby the Fig. 3a, the module 30 shows the state after casting. The module 30 has a base body 31.1, 31.2, wherein the base body 31.1 represents the geometry after casting and the base body 31.2 represents the geometry after the subsequent finishing, in particular milling, after casting. The geometry of the finished base body 31.2 is shown in the Fig. 3a shown with dashed lines.

[0069] A tube designed as a cooling line 32 is arranged in the cast base body 31.1, 31.2. The cooling line 32 is positioned by support structures 33 in the casting mold (not shown) and is completely enclosed by the material of the base body 31.1 during casting, with the cooling line 32 penetrating one side of the base body 31.1, 31.2 at least at one point. Due to the higher thermal expansion of the aluminum used for the base body 31.1, 31.2 compared to the stainless steel used for the cooling line 32, the positive connection is gap-free. The gap-free connection ensures good heat transfer between the base body 31.1, 31.2 and the fluid-carrying cooling line 32, which has a positive effect on the cooling performance.

[0070] The cooling line 32 penetrates the base body 31.1, 31.2 at a nose 34 formed on the base body 31.1, 31.2, forming an interface 35 between the supply line 32 and the base body 31.1, 31.2. The nose 34 advantageously prevents damage to the cooling line 32 during remachining of the surface 38 of the base body 31.1, for example, by a milling head. At the same time, remachining of the end face 37 of the nose 34 is not possible without the risk of damaging the cooling line 32, leaving a surface 37 on the base body that can only be cleaned with comparatively great effort.

[0071] Fig. 3b shows a detail of the module 30, which represents the interface 35 between the base body 31.2, which has already been reworked on the surface 38 and on the lateral surface 38 of the nose 34, and the cooling line 32 in the area of ​​the nose 34.

[0072] Due to the capillary action or the surface tension of the liquid aluminum during casting, a gap 36 may occur at the interface 35 between the cooling line 32 and the base body 31.2 in the area of ​​the nose 34. This gap and the non-reworkable end face 37 of the nose 34 are difficult to clean and can lead to contamination of the projection exposure system 1 ( Fig. 1), especially the mirror Mx.

[0073] Fig. 4 shows a detail of a module 40 according to the invention, which has a basically comparable structure to the module 30 known from the prior art ( Fig. 3a), whereby where appropriate, corresponding elements with respect to the Fig. 3a and the Fig. 3b are designated by reference numerals increased by 10. The detail shows, as already shown in the Fig. 3b, the interface 45, at which the cooling line 42 penetrates the base body 41.2. The base body 41.2 is in the Fig. 4 is already shown in the state produced by post-machining the surfaces 48 from the cast state of the base body (not shown).

[0074] In the example shown, the cooling line 42 is made of stainless steel, while the base body 41.2 is made of aluminum. Alternatively, other materials can be used for the cooling line 42 and the base body 41.2, such as copper for the base body 41.2 and stainless steel for the cooling line 42.

[0075] The cooling line 42 is surrounded in the area of ​​the outlet from the base body 41.2 by a sleeve 49.1, 49.2, which is in front of the Fig. 3a explained positioning of the cooling line 42 in the casting mold is shrunk onto the cooling line 42.

[0076] As an alternative to shrink-fitting, other methods such as clamping, gluing, welding, soldering, or other processes can also be used. The alternative method for connecting the sleeves 49.1, 49.2 must ensure a gap-free connection between the cooling line 42 and the sleeves 49.1, 49.2, particularly at the outlet of the cooling line 42 from the sleeves 49.1, 49.2, and be resistant to the temperatures encountered during the casting process. Furthermore, the connection must meet the surface roughness requirements, as explained above, without any post-processing.

[0077] In contrast to the Fig. In the example explained in Figure 3a, the nose 44 is formed by the sleeve 49.1, 49.2 projecting beyond the edge of the base body 41.2.

[0078] Furthermore, the sleeve 49.1, 49.2 in the illustrated embodiment is made of the same material as the base body 41.2, i.e., aluminum. During the casting of the base body 41.2, the sleeve 49.1 is slightly melted without losing its shape, so that the positioning of the cooling line 42 in the base body 41.2 is met within the specified requirements.

[0079] As explained above, the end face 47 of the sleeve 49.1, 49.2 is already machined to a quality sufficient for cleaning before shrink-fitting. The outer surface 48 of the sleeve 49.1, 49.2 and the surfaces 48 of the base body 41.2 are remachined after the casting process, as is known from the prior art. Any gap that may arise at the interface between the sleeve 49.1, 49.2 and the base body 41.2, which is usually only a few tenths of a millimeter deep, can be easily removed by removing the corresponding material. The result is a gap-free and easily cleanable outlet for the cooling line 42 from the base body 41.2. List of reference symbols 30 Cooling jacket 31.1,31.2 Basic body 32 Cooling line 33 Support structure 34 Nose 35 Cooling line / base body interface 36 gap 37 non-machinable end face 38 reworked surfaces 40 Cooling jacket 41.2 Basic body 42 Cooling line 44 Nose 45 Cooling line / base body interface 47 pre-machined face 48 reworked surfaces 49.1,49.2 sleeve QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2008 009 600 A1 [0031, 0035] US 2006 / 0132747 A1

[0033] EP 1 614 008 B1

[0033] US 6,573,978

[0033] DE 10 2017 220 586 A1

[0038] US 2018 / 0074303 A1

[0052]

Claims

[1] Method for producing a module (40) for semiconductor lithography with a base body (41.2), wherein at least one tube (42) is arranged in the base body (41.2) and penetrates the base body (41.2) at least at one point (45), with the following method steps: - joining a sleeve (49.1,49.2) to the pipe 42 in the area of the outlet (45) of the pipe (42) from the base body (41.2), - positioning the tube (42) in a casting mould to produce the base body (41.2), - Casting of the base body (41.2), - Post-processing of the base body (41.2). [2] Method according to claim 1, characterized by that the tube (42) is positioned in the casting mold by at least one support structure (33). [3] Method according to one of claims 1 or 2, characterized by that the tube (42), the sleeve (49.1,49.2) and the support structures (33) are at least partially enclosed by the melt during casting. [4] Method according to one of claims 2 or 3, characterized by that the sleeve (49.1,49.2) and / or the support structures (33) are at least partially melted by the melt during casting. [5] Method according to one of the preceding claims, characterized by that at least one end face (47) of the sleeve (49.1, 49.2) has at least a surface roughness of less than Rz 6.3, preferably less than Rz 2.5 and particularly preferably less than Rz 1.0 before joining to the pipe (42). [6] Method according to one of claims 2 to 5, characterized by that the support structures and the sleeve (49.1, 49.2) are made of the same material as the base body (41.2). [7] Method according to one of the preceding claims, characterized bythat the sleeve (49.1, 49.2) and / or the outer surface (48) of the housing (41.2) are at least partially reworked after the casting of the base body (41.2) to produce a gap-free connection between the sleeve (49.1, 49.2) and the base body (41.2) and / or the sleeve (49.1, 49.2) is reworked, in particular by machining, to produce a surface roughness of less than Rz 6.3, preferably less than Rz 2.5 and particularly preferably less than Rz 1.

0. [8] Module (40) for semiconductor lithography with a base body (41.2), wherein at least one tube (42) is arranged in the base body (41.2) and penetrates the base body (41.2) at least at one point, characterized by that the tube (42) is enclosed by a sleeve (49.1,49.2) without any gaps. [9] Module (40) according to claim 8, characterized by that a sleeve (49.1,49.2) of the module (40) is enclosed by the base body (41.2) without a gap. [10] Module (40) according to one of claims 8 or 9, characterized by that the surface (48) of the module (40) has a surface roughness of less than Rz 6.3, preferably less than Rz 2.5 and particularly preferably less than Rz 1.

0. [11] Module (40) according to one of claims 8 to 10, characterized by that the sleeve (49.1,49.2) and / or a support structure (33) for positioning the tube (42) in the base body (41.2) comprise the same material as the base body (41.2).

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