Semiconductor device with a connector and method for manufacturing the same

Abstract

Providing a molding tool comprising a mold cavity and at least one recess, wherein the mold cavity extends predominantly along a first axis and a perpendicular second axis, wherein the recess extends predominantly along a third axis perpendicular to the first and second axes, and wherein the recess is arranged on a first main face of the mold cavity, at least partially filling the recess with a filler material, placing a substrate in the mold cavity, wherein at least one semiconductor chip and at least one connector, the connector extending along the third axis, are arranged on the substrate such that the connector extends at least partially into the recess, and forming over the at least one semiconductor chip and an inner part of the connector by filling the mold cavity with liquid molding material, wherein the filler material preventsthat the liquid molding material flows at least partially into the cavity, wherein the filling material comprises one or more of an ionic liquid, a suspension, a non-Newtonian fluid and filaments of a 3D printer, or wherein the filling material consists of a high-pressure gas and wherein the method comprises: filling a first part of the liquid molding material into the mold cavity (112), then filling the high-pressure gas into the cavity (114) and then filling a second part of the liquid molding material into the mold cavity (112).

Description

TECHNICAL AREA

[0001] The present disclosure relates to a semiconductor device with a connector and a method for manufacturing the same using a forming tool with a cavity and a pit connected to the cavity. BACKGROUND

[0002] A semiconductor device, for example, a shaped semiconductor package or a shaped semiconductor module, may comprise a substrate arranged in a plane. One or more semiconductor chips and external contacts may be arranged on the substrate. The external contacts may extend predominantly parallel to the plane and may be exposed from one or more lateral sides of the shaped semiconductor device. It may be advantageous to provide additional external contacts or connectors arranged perpendicular to the plane, which may be exposed from a top and / or bottom side of the shaped device, with the lateral sides connecting the top and bottom sides of the shaped device.However, manufacturing a semiconductor device that includes connectors arranged perpendicular to the plane can be comparatively complex and can therefore significantly increase the complexity and / or cost of such a semiconductor device. EP 3 545 550 B1 discloses parts of the external contacts outside the package by bending them at 90 degrees. EP 4 125 116 A2 discloses the subsequent insertion of so-called press-fit pins perpendicular to a surface of a semiconductor module. DE 10 2018 219 005 A1 and DE 10 2018 219 003 A1 propose a potting mold with a recess, wherein the recess is filled with a cushion-like soft material of a specific viscosity and / or elasticity to receive the corresponding electrical contact part(s) of the pin(s) when the first and second mold halves are joined and thus closed.Improved semiconductor devices and improved methods for manufacturing semiconductor devices can help solve these and other problems. SUMMARY

[0003] Providing a mold tool comprising a mold cavity and at least one recess, wherein the mold cavity extends predominantly along a first axis and a perpendicular second axis, wherein the recess extends predominantly along a third axis perpendicular to the first and second axes, and wherein the recess is arranged on a first main face of the mold cavity; at least partially filling the recess with a filler material; placing a substrate in the mold cavity, wherein at least one semiconductor chip and at least one connector, the connector extending along the third axis, are arranged on the substrate such that the connector extends at least partially into the recess;and shapes over the at least one semiconductor chip and an inner part of the connector by filling the mold cavity with liquid molding material, wherein the filling material prevents the liquid molding material from flowing at least partially into the cavity, wherein the filling material comprises or consists of one or more of an ionic liquid, a suspension, a non-Newtonian fluid and filaments of a 3D printer, or wherein the filling material consists of a high-pressure gas and wherein the method comprises: filling a first part of the liquid molding material into the cavity, then filling the high-pressure gas into the cavity and then filling a second part of the liquid molding material into the cavity.;

[0004] Various aspects relate to a semiconductor device comprising: a substrate extending along a plane; at least one semiconductor chip arranged on the substrate; at least one connector arranged on the substrate, the connector extending along a third axis perpendicular to the plane; a shaped body encapsulating the at least one semiconductor chip and an inner part of the connector, such that an outer part of the connector is exposed from the shaped body; and a cover at least partially covering the outer part of the connector, the cover having a different material composition than the shaped body, wherein the cover (300) comprises or consists of one or more of a polymer, filaments of a 3D printer and a non-Newtonian fluid.

[0005] The expert will recognize additional features and advantages upon reading the following detailed description and upon examining the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure is illustrated by way of example and without limitation in the figures of the accompanying drawings, in which the same reference symbols refer to similar or identical elements. The elements of the drawings are not necessarily to scale relative to one another. The features of the various examples shown may be combined, provided they are not mutually exclusive. The Fig. 1A to Fig. Figure 1E illustrates a semiconductor device with a vertical connector at various stages of fabrication, wherein a molding tool with a mold cavity extending predominantly in one plane and a pit connected to the mold cavity and extending predominantly perpendicular to the plane is used to fabricate the semiconductor device. A filler material in the pit prevents liquid molding material from entering the pit. The Fig. 2A to Fig. Figure 2F illustrates another semiconductor device at various stages of fabrication, using a film to cover the mold cavity of the mold tool. The filler material in the pit provides mechanical support for the film. The Fig. 3A and Fig. Figure 3B illustrates another semiconductor device at various stages of manufacture, with the filler material remaining at least partially on the connector after the semiconductor device has been removed from the mold. The Fig. 4A to Fig. Figure 4C illustrates another semiconductor device in various stages of manufacture, wherein the semiconductor device comprises external power contacts that are clamped between two parts of the molding tool during the molding process, and wherein the external power contacts are substantially perpendicular to the pits of the molding tool. The Fig. 5A and Fig. Figure 5B illustrates another semiconductor device in various stages of manufacture, wherein the mold tool includes pits on opposite sides of the mold cavity, so that a semiconductor device with connectors on opposite sides of the substrate can be accommodated in the mold cavity. Fig. Figure 6 is a flowchart of an exemplary procedure for manufacturing a semiconductor device using a molding tool with a mold cavity and a pit. DETAILED DESCRIPTION

[0007] In the following detailed description, known structures and elements are shown schematically to facilitate the description of one or more aspects of revelation. In this regard, directional terminology, such as "above," "below," "left," "right," "top," "bottom," etc., is used with reference to the orientation of the described figure(s). Since components of revelation can be positioned in a number of different orientations, the directional terminology is used for illustrative purposes only. It is understood that other examples may be used and structural or logical modifications may be made.

[0008] Furthermore, while a particular feature or aspect of an example may be disclosed with respect to only one of several implementations, such feature or aspect may be combined with one or more other features or aspects of the other implementations as may be desirable and advantageous for a given or particular application, unless expressly stated otherwise or technically restricted. Moreover, to the extent that the terms "include," "have," "with," or other variants thereof are used either in the detailed description or the claims, such terms shall be understood to mean inclusive in a manner similar to the term "comprise." The terms "coupled" and "connected" may be used together with derivatives thereof.It is understood that these terms can be used to indicate that two elements work together or interact, regardless of whether they are in direct physical or electrical contact or not; intermediary elements or layers may be provided between the "bonded," "attached," or "connected" elements. However, it is also possible for the "bonded," "attached," or "connected" elements to be in direct contact with each other. Furthermore, the term "exemplary" is meant merely as an example and not as the best or optimal solution.

[0009] The semiconductor device examples described below can use various types of semiconductor chips or circuits integrated into the semiconductor chips, including AC / DC or DC / DC converter circuits, power MOS transistors, power Schottky diodes, JFETs (junction-gate field-effect transistors), power bipolar transistors, integrated logic circuits, analog integrated circuits, integrated mixed-signal circuits, sensor circuits, MEMS (microelectromechanical systems), integrated power circuits, etc.The examples can also use semiconductor chips that include MOS transistor structures or vertical transistor structures such as IGBT structures (insulated gate bipolar transistors) or, more generally, transistor structures in which at least one electrical contact pad is arranged on a first main surface of the semiconductor chip and at least one other electrical contact pad is arranged on a second main surface of the semiconductor chip opposite the first main surface of the semiconductor chip.

[0010] An efficient semiconductor device and an efficient process for manufacturing a semiconductor device can, for example, reduce material consumption, ohmic losses, chemical waste, etc., and can thus enable energy and / or resource savings. Improved semiconductor devices and improved processes for manufacturing a semiconductor device, as described in this document, can therefore contribute, at least indirectly, to green technology solutions, i.e., climate-friendly solutions that provide a reduction in energy and / or resource consumption.

[0011] The Fig. 1A to Fig. Figure 1E shows a semiconductor device 100 in various stages of manufacture according to an exemplary method for manufacturing a semiconductor device.

[0012] Fig. Figure 1A shows a sectional view of a mold 110 with a mold cavity 112 and at least one pit 114. The mold 110 can be used to produce a molded body of the semiconductor device 100. According to an example, the mold 110 can comprise a first part 110-1 and a second part 110-2, wherein the first and second parts 110-1, 110-2 can be arranged in an open or closed state, and wherein the first and second parts 110-1, 110-2 form the mold cavity 112 in the closed state of the mold 110.

[0013] The mold cavity 112 extends predominantly along a first axis (the x-axis in Fig. 1A) and a vertical second axis (the y-axis in Fig. 1A). The depression 114 extends predominantly along a third axis (the z-axis in Fig. 1A), which is arranged perpendicular to the first and second axes. Furthermore, the recess 114 is arranged on a first main surface 112-1 of the mold cavity 112. In other words, the recess 114 can be considered as a comparatively thin extension of the mold cavity 112 along the z-axis.

[0014] The mold cavity 112 can have any suitable shape and any suitable dimensions. For example, the mold cavity 112 can have extensions along the x-axis and along the y-axis that are at least three, four, five, six, etc., times the extension along the z-axis. The extension of the mold cavity 112 along the z-axis can be, for example, about 1 mm or more, 2 mm or more, 3 mm or more, 5 mm or more, 10 mm or more, or 20 mm or more.

[0015] Likewise, the recess 114 can have any suitable shape and dimensions. For example, the recess 114 can have an extent along the z-axis (measured from a first end 114-1 on the first side 112-1 of the mold cavity 112 to an opposite second end 114-2 of the recess 114) in the range of about 1 mm to about 10 cm. The lower limit of this range can also be about 2 mm, about 4 mm, or about 6 mm, and the upper limit can also be about 8 cm, about 6 cm, about 4 cm, about 2 cm, or about 1 cm. Extent of the recess 114 along the x-axis and the y-axis can, for example, be about half or less, or one-third or less, or one-quarter or less, or one-fifth or less of the extent along the z-axis.Furthermore, the recess 114 can, for example, have a circular cross-section, a square cross-section, or a rectangular cross-section when viewed from above the first end 114-1.

[0016] In the Fig. In the example shown in Figure 1A, the mold 110 comprises a single pit 114. However, the mold 110 can, of course, comprise any suitable number of pits 114, for example, two, three, four, five, six, etc. In the case that the mold 110 comprises a plurality of pits 114, the pits 114 can all have the same dimensions and / or the same shape, or the pits 114 can have different dimensions and / or different shapes. According to one example, all of the pits 114 are arranged on the first main face 112-1 of the mold cavity 112. This can be the case, in particular, if the semiconductor device 100 is configured for single-side cooling (SSC).According to another example, one or more of the pits 114 can be arranged on the first main surface 112-1 of the mold cavity 112, and one or more further pits 114 can be arranged on a second main surface 112-2 of the mold cavity 112 opposite the first main surface 112-1.

[0017] The mold cavity 112 can include lateral sides 112-3 connecting the first and second main faces 112-1, 112-2. The lateral sides 112-3 can have a smaller surface area than the first main face 112-1 and the second main face 112-2. According to one example, the lateral sides 112-3 are free of any pits 114 (however, the lateral sides 112-3 can include a stepped shape configured to accommodate a substrate 102 of the semiconductor device 100, compare Fig. 1C). According to an example, the forming tool 110 can also be configured to clamp external power contacts of the semiconductor device 100 between the first part 110-1 and the second part 110-2 on the lateral sides 112-3.

[0018] As in Fig. As shown in Figure 1B, a filler material 120 is filled into the pit 114, so that the filler material 120 at least partially fills the pit 114 (but no filler material 120 fills the cavity 112). The filler material 120 can be filled into the pit 114 when the mold 110 is in an open state, compare Figure 1B. Fig. 1B. In this case, the filler material 120 can be filled into the pit 114 by placing a suitable dispenser over the mold cavity 112. However, it is also possible that the mold tool 110 is configured to fill the pit 114 with the filler material 120 when the mold tool 110 is in a closed state, compare, for example, the one shown in the Fig. 2A to Fig. Example 2E is shown. It should be noted that Fig. 1A shows the forming tool 110 in a closed state and Fig. Figure 1B shows the forming tool 110 in an open state.

[0019] The filler material 120 can, for example, fill 50% or more of the volume of the pit 114, or 70% or more, or 90% or more. The filler material 120 can, for example, fill the pit 114 to such an extent that the filler material 120 does not overflow when a connector 106 of the semiconductor device 100 is inserted into the pit 114 (compare Fig. 1C). Furthermore, the filling material 120 can fill the pit 114 to such an extent that the pit 114 is substantially completely filled when the connector 106 is inserted into the pit 114.

[0020] According to one example, the filler material 120 comprises or consists of a liquid, a polymer, or a sponge. For example, the filler material 120 may comprise or consist of a polymer with a melting point below 175 °C. In particular, the filler material 120 may comprise or consist of one or more of polyethylene, polyethylene glycol, polyethylene terephthalate, glycerin, polyvinylpyrrolidone, and silicone. According to another example, the filler material 120 comprises or consists of one or more of an ionic liquid, a suspension, a non-Newtonian fluid, and filaments of a 3D printer.

[0021] As in Fig. As shown in Figure 1C, a substrate 102 is placed in the mold cavity 112. At least one semiconductor chip 104 and at least one connector 106 are arranged on the substrate. The semiconductor chip 104 can be completely enclosed within the mold cavity 112 when the substrate 102 is placed in the mold cavity 112. As shown in Fig. As shown in Figure 1C, the connector 106 extends along the third axis and the substrate 102 is arranged in the mold cavity 112, such that the connector 106 extends at least partially into the recess 114. This can mean that an inner part (upper part in Fig. 1C) of the connector 106 is arranged within the mold cavity 112 and an outer part (lower part in Fig. 1C) of the connector 106 is arranged within the recess 114. Furthermore, as shown in Fig. 1C shows the outer part of the connector 106 covered by the filler material 120.

[0022] In the Fig. In the example shown in Figure 1C, the semiconductor device 100 comprises a single connector 106. However, the semiconductor device 100 can comprise any suitable number of connectors 106, for example, two, three, four, five, six, etc. In the case that the semiconductor device 100 comprises more than one connector 106, the connectors 106 can all be inserted into individual pits 114, or some or all of the connectors 106 can be inserted into a common pit 114.

[0023] According to one example, the pit 114 is only slightly larger than the connector 106. In particular, the pit 114 can be dimensioned such that positioning tolerances of the substrate 102 in the mold cavity 112 and of the connector 106 on the substrate 102 are taken into account.

[0024] In one example, connector 106 is a press-fit pin. In another example, connector 106 is a metal clamp. Connector 106 can be configured to provide an electrical connection between semiconductor chip 104 and the outside of semiconductor device 100. Connector 106 can be configured as a control contact or a sensing contact of semiconductor device 100, configured to transmit control or sensing signals. However, it is also possible for connector 106 to be a power contact of semiconductor device 100, configured to carry a high electrical current and / or have a high voltage applied to it. The power contact can be, for example, a DC+ contact, a DC- contact, or a phase current contact.

[0025] As in Fig. As shown in Figure 1C, the semiconductor chip 104 and the connector 106 can be arranged on the same side of the substrate 102 in a side-by-side arrangement. However, it is also possible for the connector 106 to be arranged on the opposite side of the substrate 102 from the semiconductor chip 104. The substrate 102 can be any suitable type of substrate, for example, a printed circuit board (PCB), direct-bonded copper (DBC), direct-bonded aluminum (DBA), active metal solder (AMB), insulated metal substrate (IMS), a conductor frame, etc.

[0026] The semiconductor device 100 can of course include more semiconductor chips 104 than the single semiconductor chip 104 that is in Fig. Figure 1C shows that the multitude of semiconductor chips 104 can form any suitable electrical circuit, for example, a converter circuit, an inverter circuit, a half-bridge circuit, a full-bridge circuit, etc. The semiconductor chips 104 can all be arranged on the same side of the substrate 102, or one or more of the semiconductor chips 104 can be arranged on the opposite side of the substrate 102.

[0027] As in Fig. As shown in Figure 1D, liquid molding material is filled into the mold cavity 112 and a molding process is carried out to produce a molded body 108 of the semiconductor device 100 (compare Figure 1). Fig. 1E). The mold body 108 encapsulates the at least one semiconductor chip 104 and the inner part of the connector 106. However, the outer part of the connector 106 is not covered by the liquid molding material because the filler material 120 prevents the liquid molding material from flowing at least partially into the recess 114 (in particular, the liquid molding material cannot flow into the part of the recess 114 that is filled by the filler material 120).

[0028] Fig. Figure 1E shows the semiconductor device 100 after the mold body 108 has been formed and the semiconductor device 100 has been removed from the mold tool 110. As shown in Fig. As shown in Figure 1E, the outer part of the connector 106 is exposed from the molded body 108 because the liquid molding material did not cover the outer part during the molding process.

[0029] According to one example, little or no residual filler material 120 remains on the connector 106 when the semiconductor device 100 is removed from the mold cavity 112. According to another example, residual filler material 120, or even all of it, remains on the connector 106 when the semiconductor device 100 is removed from the mold cavity 112. In this case, a suitable removal process can be used to remove the filler material 120. For example, the filler material 120 can be removed during a mold degassing process configured to remove a flash from the molded body 108. Such a mold degassing process might, for example, involve immersing the semiconductor device 100 in a degassing bath, such as an alkaline bath. A degassing bath might, for example, include or consist of a solvent such as toluene, xylene, acetone, or hexane.

[0030] According to another example, a removal process can be used that specifically removes the filler material 120 but does not affect the molded body 108. For example, the filler material 120 may be hardened during the molding process, and the removal process may involve pulling the hardened filler material 120 from the connector 106.

[0031] According to yet another example, the filling material 120 consists of a high-pressure gas. In this case, the method for manufacturing the semiconductor device 100 comprises filling a first part of the liquid molding material into the cavity 112, then filling the high-pressure gas into the pit 114 via a pipe 210 (compare, e.g., Fig. 2A). The first portion of the liquid molding material essentially prevents the high-pressure gas from entering the actual cavity 112, which could cause voids in the molded body 108. After the high-pressure gas has been filled into the pit 114, a second portion of the liquid molding material is filled into the cavity 112, so that the cavity 112 is completely filled with the liquid molding material. After this, the molding process can proceed as described above. Fig. 1D and Fig. 1E is carried out in such a way that the outer part of the connector 106 is not covered by the liquid molding material and is therefore exposed to the molded body 108.

[0032] Manufacturing the semiconductor device 100 by partially covering the connector 106 with the filler material 120 and then producing the molded body 108, as described above, can be comparatively cost-effective. Alternatives would be, for example, drilling a hole through the molded body 108 down to the substrate 102 and then placing the connector 106 in the hole, or placing a sleeve on the substrate 102 and pressing the connector 106 into the sleeve after the molding process. However, these alternatives are comparatively expensive.

[0033] The Fig. 2A to Fig. Figure 2F shows the semiconductor device 100 in various stages of fabrication according to another exemplary method for fabricating a semiconductor device. The [method] in the Fig. 2A to Fig. The method disclosed in section 2F may be similar or identical to that disclosed in relation to the Fig. 1A to Fig. 1E disclosed process, with the exception of the differences described below.

[0034] As in Fig. As shown in Figure 2A, the mold tool 110 is provided and a surface of the mold cavity 112 is covered with a film 200. The film 200 is configured for use in film-assisted molding. The film 200 is positioned in the mold cavity 112 such that it separates the mold cavity 112 from the recess(s) 114. According to the Fig. In the example shown in Figure 2A, the film 200 covers only the surface of the mold cavity 112 on the first part 110-1 of the mold tool 110. However, it is also possible that another film 200 covers the surface of the mold cavity 112 on the second part 110-2 of the mold tool 110.

[0035] In the Fig. In the example shown in Figure 2A, the mold tool 110 comprises tubes 210 connected to the second ends 114-2 of the pits 114. The tubes 210 can be used to fill the pits 114 with the filler material 120. In this case, the filler material 120 can be filled into the pits 114 either after the film 200 has been placed in the mold cavity 112 or before the film 200 has been placed in the mold cavity 112. A pump, for example a high-pressure pump, can be used to force the filler material 120 through the tubes 210 into the pits 114. According to another example, a nozzle of a 3D printer can be connected to the tubes 210 and can be used to force the filler material 120 into the pits 114. However, it is also possible that the mold 110 does not include the tubes 210. In this case, the filler material 120 is filled into the pits 114 from above before the film 200 is positioned in the mold cavity 112.

[0036] As in Fig. As shown in Figure 2B, the substrate 102 with the semiconductor chip(s) 104 and the attached connector(s) 106 is arranged in the mold cavity 112. This includes piercing the film 200 with the connector(s) 106 at the pit(s) 114.

[0037] As in Fig. As shown in Figure 2C, the filler material 120 is filled into the pits 114. As mentioned above, this can be done using the pipes 210, or the pits 114 can be filled from above before the mold cavity 112 is covered with the foil 200. The pits 114 can be completely or almost completely filled with the filler material 120 beneath the foil 200. The foil 200 can be supported by the filler material 120.

[0038] As in Fig. As shown in the 2D figure, liquid molding material is poured into the mold cavity 112, and heat and / or pressure are applied to form the molded body 108. It should be noted that without the filler material 120 supporting the film 200, the film 200 spanning the pits 114 would not be able to withstand the pressure of the liquid molding material poured into the mold cavity 112. Therefore, without the filler material 120, the diameter of the pits 114 would have to be significantly reduced to prevent the film 200 from tearing. However, this would considerably reduce the maximum permissible positioning tolerances of the connectors 106 and increase the overall cost of manufacturing the semiconductor device 100.

[0039] As in Fig. As shown in Figure 2E, the fill material 120 can be pumped out of the pits 114 via the pipes 210, for example using a pump, in particular a high-pressure pump. By pumping the fill material 120 out of the pits 114, the amount of residual fill material 120 on the connectors 106 can be reduced.

[0040] However, it is also possible that the filler material 120 is not pumped out of the pits 114. In this case, the film 200 can retain the filler material 120 when the semiconductor device 100 is removed from the mold cavity 112.

[0041] Fig. Figure 2F shows the semiconductor device 100 after it has been removed from the mold 110. As in relation to Fig. As noted in 1E, a degassing process can optionally be carried out to remove residual filling material 120 from the connectors 106 and / or to remove mold flash from the molded body 108.

[0042] The Fig. 3A and Fig. Figure 3B shows the semiconductor device 100 in various stages of fabrication according to another exemplary method for fabricating a semiconductor device. The [method] shown in the Fig. 3A and Fig. The method shown in Figure 3B may be similar or identical to the method disclosed with respect to the preceding figures, except for the differences described below.

[0043] In particular, the in the Fig. 3A and Fig. In the example shown in Figure 3B, the filler material 120 has a melting point above the mold temperature, i.e., the temperature to which the liquid molding material is heated to form the molded body 108. For example, the mold temperature may be approximately 185 °C and the melting point of the filler material 120 may be approximately 200 °C. An example of such a filler material 120 is a suitable thermoplastic.

[0044] Fig. 3A shows a manufacturing stage similar to the Fig. 1D and Fig. 2D. The filler material 120 can, for example, be filled into the recesses 114 via channels that are heated to above the melting point of the filler material 120. In the recesses 114, the filler material 120 solidifies around the connectors 106. This solidification can begin before or after the molding process.

[0045] Fig. Figure 3B shows the semiconductor device 100 after it has been removed from the mold 110. As shown, the solidified filler material 120 adheres to the connectors 106. The filler material 120 can, for example, serve as a cover 300 for the connectors 106 during storage and / or shipping of the semiconductor device 100. The solidified filler material 120 can be removed from the connectors 106, for example, using a mold degassing bath, as mentioned above.

[0046] The Fig. 4A to Fig. Figure 4C shows another semiconductor device 400 in various stages of fabrication according to another exemplary method for fabricating a semiconductor device. The one in the Fig. 4A to Fig. The method shown in Figure 4C may be similar to or identical with respect to the method disclosed with respect to the preceding figures, except for the differences described below. The semiconductor device 400 may be similar to or identical with the semiconductor device 100, except for the differences described below.

[0047] As in Fig. As shown in Figure 4A, the semiconductor device 400 comprises external power contacts 410 coupled to the substrate 102, the power contacts 410 being arranged perpendicular to the connectors 106. The external power contacts 410 are clamped between the first part 110-1 and the second part 110-2 of the mold 110 during the molding process. Because the connectors 106 are arranged perpendicular to the external power contacts 410, they cannot be clamped between parts of the mold 110 in the same way as the external power contacts 410. For this reason, the recesses 14 must be filled with the filler material 120. Fig. Figure 4A shows the forming tool 110 in an open state and Fig. Figure 4B shows the forming tool 110 in a closed state.

[0048] The external power contacts 410 can be, for example, metal terminals or busbars coupled to the same side of the substrate 102 as the semiconductor chips 104. According to one example, the external power contacts 410 are configured to carry a higher electrical current and / or have a higher applied voltage than the connectors 106. According to another example, the connectors 106 are configured to carry similar currents and / or have similar applied voltages as the external power contacts 410. The semiconductor device 400 can, for example, include a first external power contact 410 configured as a DC+ contact, a second external power contact 410 configured as a DC- contact, and a third external power contact configured as a phase current contact.

[0049] As in Fig. As shown in Figure 4C, the connectors 106 are free from a main face of the molded body 108 and the external power contacts 410 are free from lateral sides, for example opposite lateral sides, of the molded body 108 (where the main face has a larger surface area than any of the lateral sides of the molded body 108).

[0050] The Fig. 5A and Fig. Figure 5B shows another semiconductor device 500 in various stages of fabrication according to another exemplary method for fabricating a semiconductor device. The one in the Fig. 5A and Fig. The method shown in Figure 5B may be similar to or identical with respect to the method disclosed with respect to the preceding figures, except for the differences described below. Furthermore, the semiconductor device 500 may be similar to or identical with the semiconductor device 100 or 400, except for the differences described below. Fig. 5A the semiconductor device 500 is still inside the mold 110 and in Fig. 5B, the semiconductor device 500 was removed from the mold tool 110.

[0051] The in Fig. The mold tool 110 shown in Figure 5A comprises at least one recess 114 located on the second main surface 112-2 of the mold cavity 112 opposite the first main surface 112. At least one first connector 106 is located on a first side 102-1 of the substrate 102, and at least one second connector 106 is located on an opposite second side 102-2 of the substrate 102. The substrate 102 is placed in the mold cavity 112 such that the first connector 106 extends at least partially into the recess 114 on the first main surface 112-1 of the mold cavity 112, and the second connector 106 extends at least partially into the second recess 114 on the second main surface 112-2 of the mold cavity 112.Furthermore, the mold cavity 112 can be configured such that the molded body 108 is formed on the first side 102-1 of the substrate 102 and also on the second side 112-2 of the substrate 102 of the semiconductor device 500 (this can, of course, also apply to the semiconductor devices 100 and 400). For example, the semiconductor chips 104 can also be arranged on both sides 102-1, 102-2 of the substrate 102. It is, of course, also possible for the semiconductor chips 104 to be arranged only on one side of the substrate 102.

[0052] Fig. Figure 6 is a flowchart of an exemplary process 600 for manufacturing a semiconductor device. Process 600 can be used, for example, to manufacture one of the semiconductor devices 100 to 500.

[0053] Method 600 comprises, in 601, a process of providing a mold tool comprising a mold cavity and at least one recess, wherein the mold cavity extends predominantly along a first axis and a perpendicular second axis, wherein the recess extends predominantly along a third axis perpendicular to the first and second axes, and wherein the recess is arranged on a first main face of the mold cavity; in 602, a process of at least partially filling the recess with a filling material; in 603, a process of placing a substrate into the mold cavity, wherein at least one semiconductor chip and at least one connector, the connector extending along the third axis, are arranged on the substrate such that the connector extends at least partially into the recess.and in 604 a process of forming over the at least one semiconductor chip and an inner part of the connector by filling the mold cavity with liquid molding material, wherein the filling material prevents the liquid molding material from flowing at least partially into the cavity.

Claims

[1] Method (600) for manufacturing a semiconductor device (100, 400), the method comprising: Providing (601) a molding tool (110) comprising a mold cavity (112) and at least one recess (114), wherein the mold cavity (112) extends predominantly along a first axis and a perpendicular second axis, wherein the recess (114) extends predominantly along a third axis perpendicular to the first and second axes, and wherein the recess (114) is arranged on a first main surface (112-1) of the mold cavity (112), at least partially filling (602) the depression (114) with a filling material (120), Placing (603) a substrate (102) in the mold cavity (112), wherein at least one semiconductor chip (104) and at least one connector (106), the connector (106) extending along the third axis, are arranged on the substrate (102) such that the connector (106) extends at least partially into the recess (114), and Forming (604) over the at least one semiconductor chip (104) and an inner part of the connector (106) by filling the mold cavity (112) with liquid molding material, wherein the filling material (120) prevents the liquid molding material from flowing at least partially into the recess (114); wherein the filling material (120) comprises or consists of one or more of an ionic liquid, a suspension, a non-Newtonian fluid and filaments of a 3D printer, or wherein the filling material (120) consists of a high-pressure gas and wherein the method comprises the following: Filling a first part of the liquid molding material into the mold cavity (112), then filling the high-pressure gas into the recess (114) and then filling a second part of the liquid molding material into the mold cavity (112). [2] The method of claim 1, further comprising: prior to molding, covering a surface of the mold cavity (112) with a film (200), and Piercing the foil (200) with the connector (106) at the recess (114) when the substrate (102) is placed in the mold cavity (112). [3] Method according to one of the preceding claims, wherein a first end (114-1) of the recess (114) is connected to the mold cavity (112) and an opposite second end (114-2) is turned away from the mold cavity (112), and wherein the filling material (120) is pressed into the recess (114) via a tube (210) arranged at the second end (114-2). [4] The method of claim 3, further comprising: Pumping the filling material (120) from the depression (114) via the pipe (210) after the forming process. [5] Method according to any one of the preceding claims, further comprising: Removing residues of the filler material (120) from the connector (106) after the molding process. [6] Method according to claim 5, wherein the removal comprises immersing the semiconductor device (100, 400) in a degassing bath. [7] Method according to any of the preceding claims, wherein the connector (106) comprises or consists of a press-fit pin. [8] Method according to claim 7, wherein the forming process is carried out such that the press-in pin is in direct contact with the liquid forming material. [9] Method according to any of the preceding claims, wherein the semiconductor device (400) further comprises external power contacts (410) coupled to the substrate (102), wherein the external power contacts (410) are arranged perpendicular to the connector (106), and wherein the external power contacts (410) are clamped between a first part (110-1) and a second part (110-2) of the molding tool (110) during the molding process. [10] Method according to one of the preceding claims, wherein a second recess (114) is arranged on a second main surface (112-2) of the mold cavity (112) opposite the first main surface (112-1), wherein the first connector (106) is arranged on a first side (102-1) of the substrate (102) and the second connector (106) is arranged on an opposite second side (102-2) of the substrate (102), and wherein the substrate (102) is placed in the mold cavity (112) such that the first connector (106) extends at least partially into the recess (114) on the first main side (112-1) of the mold cavity (112) and the second connector (106) extends at least partially into the second recess (114) on the second main side (112-2) of the mold cavity (112). [11] Semiconductor device (100, 400), comprising: a substrate (102) extending along a plane, at least one semiconductor chip (104) arranged on the substrate (102), at least one connector (106) arranged on the substrate (102), wherein the connector (106) extends along a third axis perpendicular to the plane, a shaped body (108) that encapsulates the at least one semiconductor chip (104) and an inner part of the connector (106), such that an outer part of the connector (106) is exposed by the shaped body (108), and a cover (300) that at least partially covers the outer part of the connector (106), wherein the cover (300) has a different material composition than the molded body (108), and wherein the cover (300) comprises or consists of one or more of a polymer, filaments of a 3D printer and a non-Newtonian fluid. [12] Semiconductor device (400) according to claim 11, further comprising: external power contacts (410) that are exposed from lateral sides of the molded body (108), wherein the connector (106) is exposed from a first side and / or an opposite second side of the molded body (108), and wherein the lateral sides connect the first and the second side. [13] Semiconductor device (100, 400) according to one of claims 11 or 12, wherein the connector is a press-fit pin.

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