Microelectromechanical component and method for manufacturing a microelectromechanical component

Abstract

The invention relates to a microelectromechanical MEMS component (100) for determining ambient pressure and / or sound pressure, with a parallel capacitance plate structure (101), wherein the capacitance plate structure (101) comprises a static electrode (103) and a movable electrode (105) mounted to be deflectable relative to the static electrode (103) along a deflection direction (D), wherein the static electrode (103) comprises a first static electrode plate (107) and a second static electrode plate (109), wherein the movable electrode (105) comprises a first movable electrode plate (111) and a second movable electrode plate (113) connected to the first movable electrode plate (111), wherein the first static electrode plate (107) and the second static electrode plate (109) are spaced apart from each other along the deflection direction (D).wherein the first static electrode plate (107) defines a first functional layer (F1) and the second static electrode plate (109) defines a second functional layer (F2) of the MEMS component (100), wherein the first movable electrode plate (111) is arranged in the second functional layer (F2) and is positioned opposite the first static electrode plate (107), wherein the second movable electrode plate (113) is arranged in the first functional layer (F1) and is positioned opposite the second static electrode plate (109), and wherein the first and second movable electrode plates (111, 113) can be deflected together from the first and second functional layers (F1, F2) by deflecting the movable electrode (105).

Description

[0001] The present invention relates to a microelectromechanical component and a method for manufacturing a microelectromechanical component. State of the art

[0002] Microelectromechanical components, in particular MEMS capacitive pressure sensors and MEMS capacitive microphones and corresponding manufacturing processes are known from the prior art.

[0003] It is an object of the present invention to provide an improved microelectromechanical component and a corresponding method for manufacturing a microelectromechanical component.

[0004] The problem is solved by the MEMS component and the method of the independent claims. Advantageous embodiments are the subject of the dependent claims.

[0005] According to one aspect, a microelectromechanical MEMS component for determining ambient pressure and / or sound pressure is provided, with a parallel capacitance plate structure, wherein the capacitance plate structure comprises a static electrode and a movable electrode mounted to deflect relative to the static electrode along a deflection direction, wherein the static electrode comprises a first static electrode plate and a second static electrode plate, wherein the movable electrode comprises a first movable electrode plate and a second movable electrode plate connected to the first movable electrode plate, wherein the first static electrode plate and the second static electrode plate are spaced apart from each other along the deflection direction.wherein the first static electrode plate defines a first functional layer and the second static electrode plate defines a second functional layer of the microelectromechanical component, wherein the first movable electrode plate is arranged in the second functional layer and opposite the first static electrode plate, wherein the second movable electrode plate is arranged in the first functional layer and opposite the second static electrode plate, and wherein the first and second movable electrode plates can be deflected together from the first and second functional layers by deflecting the movable electrode.

[0006] This allows for the technical advantage of providing an improved microelectromechanical component. The microelectromechanical component, hereinafter referred to as the MEMS component, comprises a capacitance plate structure with a static electrode and a movable electrode. The static electrode includes at least two static electrode plates, and the movable electrode similarly includes two movable electrode plates. By moving the movable electrode plates relative to the static electrode plates, changes in capacitance between the electrodes can be determined. The static electrode plates, which are spaced apart from each other in the direction of deflection of the movable electrode, define two functional layers of the MEMS component. The movable electrode plates are spaced apart from each other along the direction of deflection and are arranged within the two functional layers.By deflecting the movable electrode, the movable electrode plates from the first and second functional layers can be deflected, thereby changing the distances between the movable and static electrode plates and thus causing changes in capacitance between the electrodes. The inventive MEMS component requires only two functional layers, thereby simplifying the structure of the MEMS component.

[0007] According to one embodiment, the MEMS component is configured for a differential capacitive measurement method.

[0008] This allows for the technical advantage that the differential capacitive measurement method enables a precise determination of the ambient pressure or sound pressure by the MEMS component.

[0009] According to one embodiment, when the movable electrode is deflected relative to the static electrode, a first distance between the first static electrode plate and the first movable electrode plate is increased or decreased, and a second distance between the second static electrode plate and the second movable electrode plate is decreased or increased in the opposite direction to the first distance.

[0010] This allows for the technical advantage that the differential capacitive measurement method is enabled by the corresponding deflection of the first and second movable electrode plates of the moving electrode relative to the first and second static electrode plates of the static electrode. When the moving electrode is deflected relative to the static electrode, a first distance between the first static electrode plate and the first moving electrode plate is increased or decreased, and a second distance between the second static electrode plate and the second moving electrode plate is changed in the opposite direction to the first distance. This generates two different capacitances, thus enabling the differential capacitive measurement method.

[0011] According to one embodiment, the movable electrode is mounted on the static electrode so that it can be deflected by means of a spring structure.

[0012] This allows for the technical advantage that the spring structure enables a robust, deflectable mounting of the movable electrode.

[0013] According to one embodiment, the MEMS component has a frame structure, wherein the movable electrode is connected to the frame structure via the spring structure.

[0014] This allows the technical advantage that the movable electrode can be securely mounted in a deflectable position via the frame structure.

[0015] According to one embodiment, the second movable electrode plate is connected to the first static electrode plate via a first spring element, wherein the first movable electrode plate is connected to the second static electrode plate via a second spring element.

[0016] This achieves the technical advantage that the first and second movable electrode plates are connected to the first and second static electrode plates via the first and second spring elements, allowing them to be deflected. This provides a robust parallel capacitance plate structure that nevertheless offers a high response rate from the movable electrode.

[0017] According to one embodiment, the spring structure is formed as a first spring silicon layer and a second spring silicon layer, wherein the first spring silicon layer is formed on the first static electrode plate and the second movable electrode plate, and wherein the second spring silicon layer is formed on the second static electrode plate and the first movable electrode layer.

[0018] This offers the technical advantage of enabling a simple spring structure via the first and second silicon layers. Furthermore, the first and second silicon layers allow for a precise and reliable response from the spring structure.

[0019] According to one embodiment, the first and second spring silicon layers fluidically seal the space between the static electrode and the movable electrode.

[0020] This achieves the technical advantage that, due to the fluid-technical sealing of the gap between the static electrode and the movable electrode by the first and second spring silicon layers, no additional sealing agent is required to seal the gap.

[0021] According to one embodiment, the space between the static electrode and the movable electrode is evacuated.

[0022] This allows for the technical advantage of a precise and very sensitive response of the movable electrode to changes in ambient pressure or sound pressure.

[0023] According to one embodiment, the first static electrode plate and / or the second static electrode plate have through-holes.

[0024] This allows for the technical advantage that the through-holes in the first and second static electrode plates enable a fluid connection between the space between the static electrode and the movable electrode and the ambient atmosphere of the MEMS component.

[0025] According to one embodiment, the first static electrode plate is statically connected to the frame structure of the MEMS component via at least one web element.

[0026] This achieves the technical advantage that the bridge element provides a stable and robust connection between the first static electrode plate and the frame structure.

[0027] According to one embodiment, the static electrode has a plurality of first static electrode plates and / or second static electrode plates, wherein the first static electrode plates are arranged in the first functional layer and the second static electrode plates are arranged in the second functional layer, wherein the movable electrode has a plurality of first movable electrode plates and / or second movable electrode plates, wherein the first movable electrode plates are arranged in the second functional layer and the second movable electrode plates are arranged in the first functional layer.

[0028] 12. This achieves the technical advantage that the first and second capacitances between the static and the moving electrode, required for the differential capacitive measurement method, can be increased in absolute value by means of the multiple first and / or second static electrode plates of the static electrode and the corresponding multiple first and / or second moving electrode plates of the moving electrode, without having to substantially increase the surface area of ​​the first and second static electrode plates and / or the first and second moving electrode plates. This improves the measurement accuracy and the structural strength of the MEMS component.

[0029] According to one embodiment, in the first functional layer, first static electrode plates and second movable electrode plates are arranged alternately along a direction perpendicular to the deflection direction, wherein in the second functional layer, second static electrode plates and first movable electrode plates are arranged alternately along the direction perpendicular to the deflection direction.

[0030] This allows for the technical advantage that the alternating arrangement of the first static electrode plates and second movable electrode plates of the first functional layer, and the alternating arrangement of the second static electrode plates and first movable electrode plates in the second functional layer, enables a space-saving arrangement of the parallel capacitance plate structure and a sensitive response behavior of the movable electrode.

[0031] According to one embodiment, the MEMS component is designed as a capacitive pressure sensor or a capacitive microphone.

[0032] This allows for the technical advantage of providing an improved capacitive pressure sensor or an improved capacitive microphone.

[0033] According to one aspect, a method for manufacturing a MEMS component according to one of the preceding embodiments is provided, comprising: providing a substrate with an oxide layer and a first electrode silicon layer formed on the oxide layer; performing silicon etching and generating at least one gap in the first electrode silicon layer, wherein a first layer element and a second layer element are generated through the gap in the first electrode silicon layer; Applying a first spring silicon layer to the first electrode silicon layer, wherein the first spring silicon layer has a smaller layer thickness than the first electrode silicon layer, and wherein the first and second layer elements of the first electrode silicon layer are connected to each other via the first spring silicon layer; Applying another oxide layer to the first spring silicon layer; performing oxide etching and creating at least one gap in the further oxide layer; Applying a second electrode silicon layer to the further oxide layer, wherein a connection between the second electrode silicon layer and the first spring silicon layer covering the second layer element of the first electrode silicon layer is formed through the gap in the further oxide layer; performing silicon etching of the second electrode silicon layer and creating at least two gaps in the second electrode silicon layer, wherein a third layer element, a fourth layer element and a fifth layer element are created through the gap in the second electrode silicon layer; Applying a second spring silicon layer to the second electrode silicon layer, wherein the second spring silicon layer has a smaller layer thickness than the second electrode silicon layer, and wherein the third to fifth layer elements of the second electrode silicon layer are interconnected via the second spring silicon layer; and Removal of the substrate and oxide layers by oxide etching and backside trenching, wherein the first layer element forms the first static electrode plate and the second layer element forms the second movable electrode plate, wherein the fourth layer element forms a wall element of the frame structure of the MEMS component, the fourth layer element forms the first movable electrode plate and the fifth layer element forms the second static electrode plate, and wherein the first and second spring silicon layers form the spring structure for deflecting the movable electrode.

[0034] This allows for an improved process for manufacturing a MEMS component with the above technical advantages.

[0035] According to one embodiment, the silicon layers are designed as polysilicon layers and formed via deposition processes.

[0036] This allows the technical advantage of easily manufactured silicon layers to be realized.

[0037] Embodiments of the invention are described with reference to the following figures. The figures show: Fig. 1 a schematic sectional view of a microelectromechanical component according to one embodiment; Fig. 2 a further schematic sectional view of a microelectromechanical component according to a further embodiment; Fig. 3 a further schematic sectional view of a microelectromechanical component according to a further embodiment; Fig. 4 a schematic representation of the microelectromechanical component made of Fig. 3; and Fig. 5 A schematic representation of a method for manufacturing a microelectromechanical component according to one embodiment.

[0038] Fig. Figure 1 shows a schematic sectional view of a microelectromechanical component 100 according to one embodiment.

[0039] In diagram a), the MEMS component 100 is shown in a non-displaced position. In diagram b), however, the MEMS component 100 is shown in a deflected position.

[0040] In the embodiment shown, the MEMS component 100 comprises a capacitance plate structure 101 with a static electrode 103 and a movable electrode 105 mounted so as to be deflected relative to the static electrode. The static electrode 103 has a first electrode plate 107 and a second electrode plate 109, which are offset relative to each other with respect to a deflection direction D. The first electrode plate 107 defines a first functional layer F1 and the second static electrode plate 109 defines a second functional layer F2 of the MEMS component 100.

[0041] The movable electrode 105 comprises, analogously, a first movable electrode plate 111 and a second movable electrode plate 113, which are spaced apart relative to each other with respect to the deflection direction D. The first movable electrode plate 111 is positioned in the second functional layer F2 and is arranged opposite the first static electrode plate 107. The second movable electrode plate 113 is positioned in the first functional layer F1 and is arranged opposite the second static electrode plate 109. The first and second movable electrode plates 111, 113 are rigidly connected to each other.

[0042] In the embodiment shown, the MEMS component 100 has a substrate 133 and a frame structure 117 with an opposing wall element 159.

[0043] The first and second static electrode plates 107, 109 are statically connected to the frame structure 117.

[0044] In the embodiment shown, the movable electrode 105 is connected to the frame structure 117 in a deflectable manner via a spring structure 115.

[0045] The spring structure 117 comprises a first spring element 119 and a second spring element 121. The first spring element 119 connects the first static electrode plate 107 to the second movable electrode plate 113 and allows the second movable electrode plate 113 to deflect relative to the first static electrode plate 107. Similarly, the second spring element 121 connects the second static electrode plate 109 to the first movable electrode plate 111. The first movable electrode plate 111 can be deflected relative to the second static electrode plate 109 via the second spring element 121.

[0046] The first static electrode plate 107 is spaced a distance A1 relative to the first movable electrode plate 111 in the direction of deflection D. The second static electrode plate 109 is spaced a corresponding distance A2 relative to the second movable electrode plate 113.

[0047] The surface area of ​​the first and second opposing static and movable electrode plates 107, 109, 111, 113, the constant of electricity of a medium in a space 127 between the static electrode 103 and the movable electrode 105, and the first and second distances A1, A2 between the electrode plates cause a first capacitance C1 between the first static electrode plate 107 and the first movable electrode plate 111, and a second capacitance C2 is created between the second static electrode plate 109 and the second movable electrode plate 113.

[0048] Figure a) shows the non-deflected state of the MEMS component 100. In the non-deflected state, the first and second distances A1, A2 are equal. It follows that the first and second capacitances C1, C2 are also equal.

[0049] In contrast, Figure b) shows a deflection in which the first movable electrode plate 111 is moved towards the first static electrode plate 107, and the second movable electrode plate 113 is moved in the opposite direction away from the second static electrode plate 109. This causes the first distance A1 between the first static and movable electrode plates 107, 111 to decrease compared to the undisplaced state, and the second distance A2 between the second static and movable electrode plates 109, 113 to increase compared to the undisplaced state. In the deflection shown, the first distance A1 is therefore smaller than the second distance A2. This results in the first capacitance C1 being larger than the second capacitance C2 in the deflection shown.

[0050] By performing a differential capacitive measurement procedure, a precise change in the capacitances C1, C2 can be determined.

[0051] Based on the determinations of the capacitance changes between the static electrode 103 and the movable electrode 105, changes in ambient pressure and / or changes in sound pressure in an environment of the MEMS component 100 can be determined.

[0052] In the illustrated embodiment, the first spring element 119 of the spring structure 115 is formed by a first spring-silicon layer 123. The second spring element 121 of the spring structure 115, on the other hand, is formed by a second spring-silicon layer 125. In the illustrated embodiment, the space 127 between the static electrode 103 and the movable electrode 105 is fluidically sealed by the first and second spring-silicon layers 123, 125. Therefore, in the illustrated embodiment, there is no fluid communication between the space 127 between the static electrode 103 and the movable electrode 105 and the surrounding environment of the MEMS component 100.

[0053] According to one embodiment, the space 127 can also be evacuated.

[0054] In the illustrated embodiment, a receiving space 161 is formed between the first functional layer F1, defined by the first static electrode plate 107, and the substrate 133. The receiving space 161 allows the movable electrode 107 to deflect along the deflection direction D towards the substrate 133. The spring structure 115 prevents the second movable electrode plate 113 from striking the substrate 133. The receiving space 161 provides sufficient clearance for the deflection of the movable electrode 105 and, in particular, the second movable electrode plate 113.

[0055] According to one embodiment, the first and second movable electrode plates 111, 113 can be two interconnected parts of a common movable electrode plate of the movable electrode 105. The movable electrode plate of the movable electrode 105 is not designed as a flat plate but comprises at least two different plate levels formed by the first and second movable electrode plates 111, 113.

[0056] Similarly, the first and second static electrode plates 107, 109 can be two interconnected parts of a common static electrode plate of the static electrode 103. The static electrode plate of the static electrode 103 is not designed as a single flat plate but comprises at least two different plate levels formed by the first and second static electrode plates 107, 109.

[0057] Fig. Figure 2 shows a further schematic sectional view of a microelectromechanical component 100 according to a further embodiment.

[0058] The embodiment in Fig. 2 is based on the embodiment in Fig. 1 and includes all the features described therein

[0059] Analogous to Fig. Figure 1 shows the non-displaced state in graphic a), while graphic b) shows a displacement of the MEMS component 100.

[0060] In contrast to the embodiment in Fig. In the illustrated embodiment, the first and second static electrode plates 107, 109 have through-holes 129. Similarly, the substrate 123 has a through-hole 129. Fluid communication between the receiving chamber 161 and the space 127 between the static electrode 103 and the movable electrode 105 and the surrounding area of ​​the MEMS component 100 is enabled by the through-holes 129.

[0061] Fig. Figure 3 shows another schematic sectional view of a microelectromechanical component 100 according to a further embodiment.

[0062] The embodiment in Fig. 3 is based on the embodiment in Fig. 2 and includes all the features described therein.

[0063] In contrast to the embodiment in Fig. In Figure 1, the static electrode 103 has two first static electrode plates 107. Similarly, the movable electrode 105 has two first movable electrode plates 111. The two first static electrode plates 107 are each arranged in the first functional layer F1, and the two first movable electrode plates 111 are arranged in the second functional layer F2. The two first movable electrode plates 111 are each connected to the second movable electrode plate 113.

[0064] Analogous to the execution in Fig. 1 the first static and movable electrode plates 107, 111 are arranged opposite each other and the second static and movable electrode plates 109, 113.

[0065] In the illustrated embodiment, in the first functional layer F1, the first static electrode plates 107 and the second movable electrode plate 113 are arranged alternately side by side with respect to a direction D1 oriented perpendicular to the deflection direction D. The second movable electrode plate 113 is thus positioned between the two first static electrode plates 107. Similarly, in the second functional layer F2, the first movable electrode plates 111 and the second static electrode plate 109 are arranged alternately relative to each other along the direction D1. The second static electrode plate 109 is thus positioned between the two first movable electrode plates 111.

[0066] In the embodiment shown, the receiving chamber 161 is integrated directly into the substrate 133. The receiving chamber 161, in turn, enables, analogous to the embodiments of the Fig. 1 and Fig. 2, the deflection of the second movable electrode layer 113.

[0067] In the illustrated embodiment, the static electrode 103 has two first static electrode plates 107 and a second static electrode plate 109. Similarly, the movable electrode 105 has two first movable electrode plates 111 and a second movable electrode plate 113. In contrast to the illustrated embodiment, the static electrode 103 and the movable electrode 105 can have a different number of first and second static and movable electrode plates 107, 109, 111, 113, respectively, than shown.

[0068] Fig. Figure 4 shows a schematic representation of the microelectromechanical component 100. Fig. 3.

[0069] In the illustrated embodiment, the first static electrode plate 107 is designed as a continuous plate with a circular through-opening 161. The second movable electrode plate 113 is similarly circular and arranged in the through-opening 129. The second movable electrode plate 113 is connected to the first static electrode plate 107 via the first spring-like silicon layer 123.

[0070] As shown in graphic a), the second static electrode plate 109 has a circular circumference and is statically connected to the frame structure 117 via two web elements 131.

[0071] The two first movable electrode plates 111 are positioned on two opposite sides of the second static electrode plate 109 and separated from each other by the second static electrode plate 109 and the two web elements 131. The two first movable electrode plates 111 are connected to the frame structure 117, the second static electrode plate 109, and the two web elements 131 via the second spring-silicon layer 125. The embodiment of Fig. 3 can also be seen as a section through the first and second functional layers F1, F2 shown. Fig. 4 along the intersection axis B.

[0072] Fig. Figure 5 shows a schematic representation of a method for manufacturing a microelectromechanical component 100 according to one embodiment.

[0073] To manufacture the MEMS component 100 according to the embodiments described above, the substrate 103 with an oxide layer 135 formed on it and a first electrode silicon layer 137 is first provided in graphic a).

[0074] As shown in Figure b), etching processes are subsequently carried out and gaps 139 are formed in the first electrode silicon layer 137. Through the gaps 139 in the first electrode silicon layer 137, two first layer elements 141 and one second layer element 143 are formed.

[0075] As shown in Figure c), a first spring silicon layer 123 is then applied to the first electrode silicon layer 137. The first spring silicon layer has a significantly smaller thickness than the first electrode silicon layer 137. The first spring silicon layer 123 is formed on the first and second layer elements 141, 143 and in the gaps 139.

[0076] As shown in Figure d), a further oxide layer 145 is subsequently applied to the first spring silicon layer 123.

[0077] As shown in Figure e), gaps 147 are subsequently etched into the further oxide layer 145. A second electrode silicon layer 149 is then applied to the further oxide layer 145.

[0078] As shown in Figure f), gaps 151 are subsequently etched into the second electron silicon layer 149. These gaps 151 form two third layer elements 153, two fourth layer elements 155, and one fifth layer element 157. A second spring silicon layer 125 is then applied to the second electron silicon layer 149. This second spring silicon layer 125 is applied to the two third layer elements 153, the two fourth layer elements 155, the fifth layer element 157, and into the gaps 151.

[0079] As shown in Figure g), the oxide layers 135, 145 are subsequently removed by appropriate gas etching. Furthermore, a trenching process is carried out by which the receiving chamber 161 is introduced into the substrate 163. In Figure g), the MEMS component 100 is shown according to the embodiment in Fig.3. Here, the first two layer elements 141 of the first electrode silicon layer 137 form the first two static electrode plates 107 of the static electrode 103. The second layer element 143 of the first electrode silicon layer 137 forms the second movable electrode plate 113 of the movable electrode 105. The two third layer elements 153 of the second electrode silicon layer 149 form the wall elements 159 of the frame structure 117. The two fourth layer elements 155 of the second electrode silicon layer 149 form the first two movable electrode plates 111 of the movable electrode 105. The fifth layer element 157 of the second electrode silicon layer 149 forms the second static electrode plate 109 of the static electrode 103. The first spring silicon layer 123 forms the first spring elements 119 of the spring structure 115.

[0080] The second spring silicon layer 125 forms the second spring elements 121 of the spring structure 115.

[0081] According to one embodiment, the first and second electrode silicon layers 137, 149 are designed as poly-silicon layers.

Claims

[1] Microelectromechanical MEMS component (100) for determining ambient pressure and / or sound pressure, with a parallel capacitance plate structure (101), wherein the capacitance plate structure (101) comprises a static electrode (103) and a movable electrode (105) mounted to be deflectable relative to the static electrode (103) along a deflection direction (D), wherein the static electrode (103) comprises a first static electrode plate (107) and a second static electrode plate (109), wherein the movable electrode (105) comprises a first movable electrode plate (111) and a second movable electrode plate (113) connected to the first movable electrode plate (111), wherein the first static electrode plate (107) and the second static electrode plate (109) are spaced apart from each other along the deflection direction (D),wherein the first static electrode plate (107) defines a first functional layer (F1) and the second static electrode plate (109) defines a second functional layer (F2) of the MEMS component (100), wherein the first movable electrode plate (111) is arranged in the second functional layer (F2) and is positioned opposite the first static electrode plate (107), wherein the second movable electrode plate (113) is arranged in the first functional layer (F1) and is positioned opposite the second static electrode plate (109), and wherein the first and second movable electrode plates (111, 113) can be deflected together from the first and second functional layers (F1, F2) by deflecting the movable electrode (105). [2] MEMS component (100) according to claim 1, wherein the MEMS component (100) is configured for a differential capacitive measurement method. [3] MEMS component (100) according to claim 1 or 2, wherein, when the movable electrode (105) is deflected relative to the static electrode (103), a first distance (A1) between the first static electrode plate (107) and the first movable electrode plate (111) is increased or decreased, and a second distance (A2) between the second static electrode plate (109) and the second movable electrode plate (113) is decreased or increased in the opposite direction to the first distance (A1). [4] MEMS component (100) according to one of the preceding claims, wherein the movable electrode (105) is mounted on the static electrode (103) so as to be deflectable via a spring structure (115). [5] MEMS component (100) according to claim 4, wherein the MEMS component (100) has a frame structure (117), wherein the movable electrode (105) is connected to the frame structure (117) via the spring structure (115). [6] MEMS component (100) according to claim 4 or 5, wherein the second movable electrode plate (113) is connected to the first static electrode plate (107) via a first spring element (119), and wherein the first movable electrode plate (111) is connected to the second static electrode plate (109) via a second spring element (121). [7] MEMS component (100) according to any one of the preceding claims 4 to 6, wherein the spring structure (115) is formed as a first spring silicon layer (123) and a second spring silicon layer (125), and wherein the first spring silicon layer (123) is formed on the first static electrode plate (107) and the second movable electrode plate (113), and wherein the second spring silicon layer (125) is formed on the second static electrode plate (109) and the first movable electrode plate (111). [8] MEMS component (100) according to claim 7, wherein the first and second spring silicon layers (123, 125) fluidically close off a space (127) between the static electrode (103) and the movable electrode (105). [9] MEMS component (100) according to claim 8, wherein the space (127) between the static electrode (103) and the movable electrode (105) is evacuated. [10] MEMS component (100) according to one of the preceding claims, wherein the first static electrode plate (107) and / or the second static electrode plate (109) have passage openings (129). [11] MEMS component (100) according to one of the preceding claims, wherein the second static electrode plate (109) is statically connected to the frame structure (117) of the MEMS component (100) via at least one web element (131). [12] MEMS component (100) according to one of the preceding claims, wherein the static electrode (103) comprises a plurality of first static electrode plates (107) and / or second static electrode plates (109), wherein the first static electrode plates (107) are arranged in the first functional layer (F1) and the second static electrode plates (109) are arranged in the second functional layer (F2), wherein the movable electrode (105) comprises a plurality of first movable electrode plates (111) and / or second movable electrode plates (113), wherein the first movable electrode plates (111) are arranged in the second functional layer (F2) and the second movable electrode plates (113) are arranged in the first functional layer (F1). [13] MEMS component (100) according to one of the preceding claims, wherein in the first functional layer (F1) first static electrode plates (107) and second movable electrode plates (113) are arranged alternately along a direction (D1) perpendicular to the deflection direction (D), and wherein in the second functional layer (F2) second static electrode plates (109) and first movable electrode plates (111) are arranged alternately along the direction (D2) perpendicular to the deflection direction (D). [14] MEMS component (100) according to one of the preceding claims, wherein the MEMS component (100) is designed as a capacitive pressure sensor or a capacitive microphone. [15] Method for manufacturing a MEMS component according to any one of claims 1 to 14 above, comprising: Providing a substrate (133) with an oxide layer (135) and a first electrode silicon layer (137) formed on the oxide layer (135); Performing silicon etching and creating at least one gap (139) in the first electrode silicon layer (137), wherein a first layer element (141) and a second layer element (143) are generated through the gap (139) in the first electrode silicon layer (137); Applying a first spring silicon layer (123) to the first electrode silicon layer (137), wherein the first spring silicon layer (123) has a smaller layer thickness than the first electrode silicon layer (137), and wherein the first and second layer elements (141, 143) of the first electrode silicon layer (137) are connected to each other via the first spring silicon layer (123); Applying another oxide layer (145) to the first spring silicon layer (123); Performing oxide etching and creating at least one gap (147) in the further oxide layer (145); Applying a second electrode silicon layer (149) to the further oxide layer (145), wherein the gap (147) in the further oxide layer (145) provides a connection between the second electrode silicon layer (149) and the first spring silicon layer (123) covering the second layer element (143) of the first electrode silicon layer (137); Performing silicon etching of the second electrode silicon layer (149) and generating at least two gaps (151) in the second electrode silicon layer (149), wherein a third layer element (153), a fourth layer element (155) and a fifth layer element (157) are generated through the gaps (151) in the second electrode silicon layer (149); Applying a second spring silicon layer (125) to the second electrode silicon layer (149), wherein the second spring silicon layer (125) has a smaller layer thickness than the second electrode silicon layer (149), and wherein the third to fifth layer elements (153, 155, 157) of the second electrode silicon layer (149) are interconnected via the second spring silicon layer (125); and Removal of the substrate (133) and the oxide layers (135, 145) by oxide etching and backside trenching, wherein the first layer element (141) forms the first static electrode plate (107) and the second layer element (143) forms the second movable electrode plate (109), wherein the third layer element (153) forms a wall element (159) of the frame structure (117) of the MEMS component (100), the fourth layer element (155) forms the first movable electrode plate (111) and the fifth layer element (157) forms the second static electrode plate (109), and wherein the first and second spring silicon layers (123, 125) form the spring structure (115) for deflecting the movable electrode (105). [16] Method according to claim 15, wherein the silicon layers are formed as polysilicon layers and are formed by deposition processes.

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