Method for manufacturing a semiconductor device

Abstract

Method for manufacturing a semiconductor device (100) comprising an insulating substrate (1) and a housing (4) with a recess (4a) on a bottom surface, which is fixed to a peripheral edge region of the insulating substrate (1), wherein the method comprises: a placement step in which the insulating substrate (1) is placed on a housing mounting device (30); an application step in which a hot melt adhesive (7) with a film thickness L1 is applied to an upper surface of the peripheral edge region of the insulating substrate (1) and then a thermosetting adhesive (8) with a film thickness L2 is applied to a periphery of a region on which the hot melt adhesive (7) is applied, on the upper surface of the peripheral edge region of the insulating substrate (1); a step for temporary fixing in which the insulating substrate (1) and the housing (4) are temporarily fixed by positioning the housing (4) such that the recess (4a) is positioned in the peripheral edge region of the insulating substrate (1), and then fastening the housing (4) and the housing mounting device (30) with screws; and a heating step in which the temporarily fixed insulating substrate (1) and the housing (4) are heated in order to fix the insulating substrate (1) and the housing (4), where L1 > L2 applies in the step for temporary fixation and L1 = L2 applies in the heating step.

Description

BACKGROUND OF THE INVENTION Area of ​​the invention

[0001] The present disclosure relates to a method for manufacturing a semiconductor device. Description of the background technology

[0002] In a conventional semiconductor device manufacturing process, a package is fixed to an insulating substrate placed on a package mounting fixture using an adhesive. When the insulating substrate and package are temporarily fixed together, the package and the mounting fixture are fused. However, when the package and mounting fixture are permanently fused, a bending force is exerted, causing distortion or deformation of the insulating substrate, and a crack may form in the insulating layer of the substrate.

[0003] To control deformation of an insulating substrate, a power semiconductor device has been proposed which is capable of ensuring a predetermined thickness of an adhesive in a bonding step in which a protruding spacer with a rubber elasticity is distributed on and positioned between a top surface of a peripheral edge region of the insulating substrate and the insulating substrate is attached to a housing (see, for example, JP 2000 - 133 769 A).

[0004] However, in the technique described in patent literature 1, JP 2000 - 133 769 A, when the housing is attached, the insulating substrate can be fixed at an angle relative to the base surface of the housing due to dimensional variations of the respective components. In this case, the problem arises that the insulating substrate develops cracks when the product is connected to a cooling element, or the thermal resistance increases due to insufficient contact between the product and the cooling element.

[0005] DE 10 2015 213 495 A1 discloses a semiconductor device that can be obtained with high reliability by creating a stable distortion of an insulating substrate into a convex shape, while ensuring close contact between a cooling element and the insulating substrate. SUMMARY

[0006] One objective of the present disclosure is to provide a technique capable of preventing an insulating substrate from being fixed in an inclined state with respect to a bottom surface of a housing, and of maintaining parallelism between the bottom surface of the housing and the insulating substrate.

[0007] A method for manufacturing a semiconductor device according to the present disclosure serves to manufacture a semiconductor device comprising an insulating substrate and a housing with a recess on a bottom surface, which is fixed at a peripheral edge region of the insulating substrate. The method for manufacturing a semiconductor device comprises a placement step, a deposition step, a temporary fixing step, and a heating step. In the placement step, the insulating substrate is placed on a housing mounting device.In the application step, a hot-melt adhesive with a film thickness L1 is applied to the upper surface of the peripheral edge region of the insulating substrate. Then, a thermosetting adhesive with a film thickness L2 is applied to the periphery of the area where the hot-melt adhesive is applied, on the upper surface of the peripheral edge region of the insulating substrate. In the temporary fixing step, the insulating substrate and the housing are temporarily fixed by positioning the housing so that the recess is located in the peripheral edge region of the insulating substrate, and then the housing and the housing mounting device are secured with screws. In the heating step, the temporarily fixed insulating substrate and the housing are heated to fix the insulating substrate and the housing. In the temporary fixing step, L1 > L2, and in the heating step, L1 = L2.

[0008] The present disclosure can prevent an insulating substrate from being fixed in an inclined state with respect to a bottom surface of a housing, and maintain parallelism between the bottom surface of the housing and the insulating substrate.

[0009] These and other objectives, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description of the present disclosure when it is taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figures 1 to 4 are cross-sectional views, each illustrating a method for manufacturing a semiconductor device according to a first preferred embodiment of the present disclosure; Fig. Figure 5 is a flowchart showing a method for manufacturing a semiconductor device according to a first preferred embodiment of the present disclosure; Fig. Figure 6 is a representation showing a temperature profile of a hot melt adhesive and a thermosetting adhesive; Fig. Figures 7 to 9 are cross-sectional views, each illustrating a method for manufacturing a semiconductor device in a case where the film thickness L1 of the hot melt adhesive varies; Fig. Figure 10 is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a second preferred embodiment of the present disclosure; Fig. Figure 11 is a top view of the insulating substrate after the application step in the third preferred embodiment; Fig. Figure 12 is a top view of the insulating substrate after the application step in the fourth preferred embodiment; Fig. Figure 13 is a side view of the insulating substrate after the application step in the fifth preferred embodiment; and Fig. Figures 14 to 17 are cross-sectional views, each illustrating a method for manufacturing a semiconductor device according to the prior art. DESCRIPTION OF PREFERRED EXECUTION FORMS<Erste bevorzugte Ausführungsform>

[0010] A first preferred embodiment is described below with reference to the drawings. Fig. Figures 1 to 4 are cross-sectional views, each illustrating a method for manufacturing a semiconductor device 100 according to a first preferred embodiment of the present disclosure.

[0011] First, the semiconductor device 100 is described, which is a product manufactured using a manufacturing process described later. The semiconductor device 100, as in Fig. Figure 4 illustrates a power module and comprises an insulating substrate 1, a variety of semiconductor elements 2, a housing 4 and a variety of terminals 5.

[0012] The insulating substrate 1 is rectangular in plan view and comprises an insulating layer 1a and circuit patterns or structures 1b and 1c. The insulating layer 1a consists mainly of, for example, ceramic. A conductive circuit structure 1b is arranged on the upper surface of the insulating layer 1a. A conductive circuit structure 1c is arranged on the lower surface of the insulating layer 1a. The circuit structures 1b and 1c consist of, for example, copper as the main material.

[0013] The semiconductor element 2 is mounted on the upper surface of the circuit structure 1b of the insulating substrate 1 via a solder metal 3. The semiconductor material of the semiconductor element 2 is, for example, silicon or a wide-bandgap semiconductor such as silicon carbide. The semiconductor element 2 is a power semiconductor element such as an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a freewheeling diode (FwDi), or a reverse-conducting IGBT (RC-IGBT).

[0014] The housing 4 is rectangular in plan view and is fixed to the upper surface of the peripheral edge region of the insulating substrate 1 such that it encloses the plurality of semiconductor elements 2. A portion of the housing 4, excluding the peripheral edge region, curves upwards, and the peripheral edge region extends towards the outer peripheral side. A plurality of bushings 6, to which the screws 9 are attached when the semiconductor device 100 is mounted on a (not illustrated) heat dissipation component or a housing mounting device 30, are arranged in a peripheral edge region of the housing 4. A recess 4a is arranged on a bottom surface of the housing 4, specifically on an inner peripheral lateral portion of the bottom surface, in a peripheral edge region of the housing 4.The recess 4a is formed in the entire inner peripheral part of the bottom surface of the peripheral edge part of the housing 4.

[0015] Sub-areas at one end of the plurality of terminals 5 are connected to the circuit structure 1b, and the sub-areas at the other end of the plurality of terminals 5 are free from the upper surface of the housing 4.

[0016] The housing 4 is fixed to the insulating substrate 1 by the hot melt adhesive 7 and the thermosetting adhesive 8, which are applied to the upper surface of the peripheral edge region of the insulating substrate 1, more specifically the upper surface of the peripheral edge region of the insulating layer 1a of the insulating substrate 1.

[0017] Next, with reference to Fig. 1 to 5 describe a method for manufacturing the semiconductor device 100. Fig. Figure 5 is a flowchart showing a method for manufacturing a semiconductor device 100 according to a first preferred embodiment of the present disclosure.

[0018] First, as in Fig. As illustrated in step 5, in the placement step the insulating substrate 1 is placed on the housing mounting device 30 (step S1).

[0019] In the next application step, a hot-melt adhesive 7 with a film thickness L1 is applied to an upper surface of the peripheral edge region of the insulating substrate 1, and then a thermosetting adhesive 8 with a film thickness L2 is applied to a periphery of an area on which the hot-melt adhesive 7 has been applied, on the upper surface of the peripheral edge region of the insulating substrate 1 (step S2). At this point, L1 > L2.

[0020] Next, as in Fig. As illustrated in Figure 1, the housing 4 is arranged such that the recess 4a is positioned in the peripheral edge region of the insulating substrate 1. At this time, due to dimensional deviations of the respective components that form the insulating substrate 1, the insulating substrate 1 is arranged in an inclined state with respect to the upper surface of the housing mounting device 30 and also in an inclined state with respect to the bottom surface of the housing 4.

[0021] As in Fig. 2 and Fig. As illustrated in Figure 5, the next step in the temporary fixing process involves positioning the housing 4 such that the recess 4a is located in the peripheral edge region of the insulating substrate 1, while maintaining parallelism between the bottom surface of the housing 4 and the insulating substrate 1. The insulating substrate 1 and the housing 4 are then temporarily fixed by fastening the housing 4 and the housing mounting device 30 with screws (step S3). At this time, a downward load is generated in the hot-melt adhesive 7 due to the fixing stress. However, the hot-melt adhesive 7 has cured and retains its shape. Furthermore, the upwardly bulging portion of the housing 4 is deformed by the fixing stress.

[0022] As in Fig. 3 and Fig. As illustrated in Figure 5, the next step involves heating the temporarily fixed insulating substrate 1 and the housing 4 to fix them in place (step S4). During this step, the hot melt adhesive 7 is melted, and its film thickness L1 is reduced by a downward load. A portion of the housing 4 in contact with the hot melt adhesive 7 is deformed downwards, and at this time, the thermosetting adhesive 8 cures, where L1 = L2. As a result, parallelism between the bottom surface of the housing 4 and the insulating substrate 1 is maintained, and the insulating substrate 1 and the adhesives (the hot melt adhesive 7 and the thermosetting adhesive 8) are in uniform contact, thus suppressing any concentration of fixing stress.

[0023] As in Fig. 4 and Fig. As illustrated in Figure 5, the next step is a removal step to loosen screw 9 in order to remove the semiconductor device 100 from the housing mounting device 30 (step S5).

[0024] Fig. Figure 6 shows a temperature profile of the hot melt adhesive 7 and the thermosetting adhesive 8. Fig. 6. Before time A, when the melting temperature T1 of the hot melt adhesive 7 is reached, the hot melt adhesive 7 has cured and the thermosetting adhesive 8 is melted. The hot melt adhesive 7 and the thermosetting adhesive 8 are then melted between time A and time B, when the temperature T2 for the thermosetting adhesive 8 to begin curing is reached. Between time B and time C, when the melting temperature T1 of the hot melt adhesive 7 is reached, the hot melt adhesive 7 is melted and the thermosetting adhesive 8 is cured. After time C, the hot melt adhesive 7 and the thermosetting adhesive 8 are cured.

[0025] As in Fig. As shown in Figure 6, by setting the melting temperature T1 of the hot melt adhesive 7 to a temperature lower than the temperature T2 for the start of the curing of the thermosetting adhesive 8, the thermosetting adhesive 8 is cured after the hot melt adhesive 7 has melted, thereby adjusting the film thickness of the adhesive (of the hot melt adhesive 7 and the thermosetting adhesive 8).

[0026] Next, the functions and effects of the first preferred embodiment will be described in comparison with the prior art. Fig. Figures 14 to 17 are cross-sectional views, each illustrating a method for manufacturing a semiconductor device 101 according to the prior art.

[0027] As in Fig. As illustrated in Figure 14, in the prior art, after the insulating substrate 1 is placed on the housing mounting device 30, a spacer 17 with rubber elasticity is distributed and inserted into the upper surface of the peripheral edge region of the insulating substrate 1 to control deformation of the insulating substrate 1, and an adhesive 18 is applied. The adhesive 18 is a thermosetting adhesive.

[0028] Next, the housing 4 is arranged such that the recess 4a is positioned in the peripheral edge region of the insulating substrate 1. At this point, due to dimensional deviations of the respective components forming the insulating substrate 1, the insulating substrate 1 is arranged in an inclined state with respect to the upper surface of the housing mounting device 30 and also in an inclined state with respect to the bottom surface of the housing 4.

[0029] As in Fig. As illustrated in Figure 15, the housing 4 is next positioned such that the recess 4a is located in the peripheral edge region of the insulating substrate 1, while maintaining parallelism between the bottom surface of the housing 4 and the insulating substrate 1. The insulating substrate 1 and the housing 4 are then temporarily fixed by fastening the housing 4 and the housing mounting device 30 with screws. At this point, a downward load is generated in the adhesive 18 due to the fastening stress. Since the adhesive 18 is not yet cured, it is consequently deformed along with the spacer 17. Furthermore, the fastening stress deforms the upwardly bulging portion of the housing 4.

[0030] As in Fig. As illustrated in Figure 16, the temporarily fixed insulating substrate 1 and the housing 4 are then heated to fix them in place. However, since the insulating substrate 1 and the housing 4 are heated in a state where the spacer 17 is deformed, they are fixed in a state where the insulating substrate 1 is inclined relative to the bottom surface of the housing 4. In such a case, parallelism between the bottom surface of the housing 4 and the insulating substrate 1 cannot be maintained.

[0031] On the other hand, in the first preferred embodiment, the method for manufacturing the semiconductor device 100 comprises: the placement step, in which the insulating substrate 1 is placed on the housing mounting device 30; the application step, in which the hot melt adhesive 7 with film thickness L1 is applied to the upper surface of the peripheral edge region of the insulating substrate 1, and then the thermosetting adhesive 8 with film thickness L2 is applied to the periphery of the area to which the hot melt adhesive 7 is applied on the upper surface of the peripheral edge region of the insulating substrate 1; the temporary fixing step, in which the insulating substrate 1 and the housing 4 are temporarily fixed by arranging the housing 4 such that the recess 4a is positioned in the peripheral edge region of the insulating substrate 1, and then the housing 4 and the housing mounting device 30 are fastened with screws;and the heating step, in which the temporarily fixed insulating substrate 1 and the housing 4 are heated to fix the insulating substrate 1 and the housing 4. In the temporary fixing step, L1 > L2, and in the heating step, L1 = L2.

[0032] Therefore, the present disclosure can prevent the insulating substrate 1 from being fixed in an inclined state with respect to the bottom surface of the housing 4 and maintain parallelism between the bottom surface of the housing 4 and the insulating substrate 1. Furthermore, the insulating substrate 1 and the adhesives (the hot-melt adhesive 7 and the thermosetting adhesive 8) are in uniform contact with each other, which makes it possible to suppress a concentration of the fixing stress.

[0033] Next, a case is briefly described in which the film thickness L1 of the hot melt adhesive 7 varies. Fig. Figures 7 to 9 are cross-sectional views, each illustrating the method for manufacturing the semiconductor device 100 in a case where the film thickness L1 of the hot melt adhesive 7 varies. Specifically, this corresponds to Fig. 7 Fig. 1 corresponds Fig. 8 Fig. 2 and corresponds Fig. 9 Fig. 3.

[0034] As in Fig. As shown in Figure 7, the film thickness L1 of the hot melt adhesive 7 differs between the left and right sides. For example, in the following description, it is assumed that the film thickness L1 of the hot melt adhesive 7 on the left side is greater than the film thickness L1 of the hot melt adhesive 7 on the right side.

[0035] As in Fig. As shown in Figure 8, in the step for temporary fixing, since the film thickness L1 of the hot melt adhesive 7 on the left side is greater than the film thickness L1 of the hot melt adhesive 7 on the right side, the load due to the fixing stress of the hot melt adhesive 7 on the left side is greater than that of the hot melt adhesive 7 on the right side.

[0036] As in Fig. As shown in Figure 9, the next step involves heating the hot melt adhesive 7, which dissolves or decomposes. The film thickness L1 of the hot melt adhesive 7 is reduced downwards by the load. However, since the load due to the clamping stress is greater in the hot melt adhesive 7 on the left side than in the hot melt adhesive 7 on the right side, the amount of deformation of the hot melt adhesive 7 on the left side is greater than that of the hot melt adhesive 7 on the right side. That is, the hot melt adhesive 7 on the left side shrinks more than the hot melt adhesive 7 on the right side. A portion of the housing 4 in contact with the hot melt adhesive 7 is deformed downwards, and at this time the thermosetting adhesive 8 cures, where L1 = L2.As a result, parallelism between the bottom surface of the housing 4 and the insulating substrate 1 can be maintained, and the insulating substrate 1 and the adhesives (the hot melt adhesive 7 and the thermosetting adhesive 8) are in uniform contact with each other, making it possible to suppress a concentration of fastening stress.

[0037] As described above, even if there is a deviation or variation in the film thickness L1 of the hot melt adhesive 7, the same effect as in the one described above can occur. Fig. Cases 1 to 4 shown are obtained in which there is no deviation in the film thickness L1 of the hot melt adhesive 7. <Zweite bevorzugte Ausführungsform>

[0038] Next, the second preferred embodiment will be described. Fig. Figure 10 is a cross-sectional view illustrating a method for manufacturing the semiconductor device 100 according to a second preferred embodiment of the present disclosure. Note that in the second preferred embodiment, the same components as those described in the first preferred embodiment are designated by the same reference numerals, and their descriptions are omitted.

[0039] Furthermore, in the first preferred embodiment, in the application step a hot melt adhesive 7 with a film thickness L1 is applied to an upper surface of the peripheral edge region of the insulating substrate 1, and then a thermosetting adhesive 8 with a film thickness L2 is applied to a periphery of a region on which the hot melt adhesive 7 is applied, on the upper surface of the peripheral edge region of the insulating substrate 1.

[0040] On the other hand, in the second preferred embodiment, as in Fig. As shown in Figure 10, in the application step, the hot-melt adhesive 7 with film thickness L1 is applied to the recess 4a of the housing 4, and the thermosetting adhesive 8 with film thickness L2 is applied to the periphery of a sub-area corresponding to the area where the hot-melt adhesive 7 is applied, on the upper surface of the peripheral edge region of the insulating substrate 1. Here, the sub-area on the upper surface of the peripheral edge region of the insulating substrate 1 corresponding to the area treated with the hot-melt adhesive 7 is a sub-area on the upper surface of the peripheral edge region of the insulating substrate 1 opposite the area treated with the hot-melt adhesive 7. The same effects as those of the first preferred embodiment can also be obtained in the second preferred embodiment. <Dritte bevorzugte Ausführungsform>

[0041] Next, the third preferred embodiment will be described. Fig. Figure 11 is a top view of the insulating substrate 1 after the application step in the third preferred embodiment. Note that in the third preferred embodiment, the same components as those described in the first and second preferred embodiments are designated by the same reference numerals, and their descriptions are omitted.

[0042] As in Fig. As shown in Figure 11, in the third preferred embodiment, in the application step of the first preferred embodiment, the hot-melt adhesive 7 is applied in an L-shape to four corners of the insulating substrate 1 in a top view. More precisely, the hot-melt adhesive 7 is applied to the partial areas of the insulating layer 1a at the four corners of the insulating substrate 1. Although not illustrated, in the application step of the second preferred embodiment, the hot-melt adhesive 7 is applied in an L-shape to partial areas in the recess 4a corresponding to four corners of the insulating substrate 1 in a bottom view. The positions in the recess 4a corresponding to the four corners of the insulating substrate 1 are those positions in the recess 4a that are opposite the four corners of the insulating substrate 1.

[0043] As described above, parallelism between the base surface of the housing 4 and the insulating substrate 7 can be maintained. Furthermore, by increasing the contact area between the insulating substrate 1 and the hot melt adhesive 7 during the temporary fixing step, the concentration of fastening stress can be reduced and cracking of the insulating substrate 1 can be suppressed. <Vierte bevorzugte Ausführungsform>

[0044] Next, the fourth preferred embodiment will be described. Fig. Figure 12 is a top view of the insulating substrate 1 after the application step in the fourth preferred embodiment. Note that in the fourth preferred embodiment, the same components as those described in the first to third preferred embodiments are designated by the same reference numerals, and their descriptions are omitted.

[0045] As in Fig. As shown in Figure 12, in the fourth preferred embodiment, in the application step of the first preferred embodiment, the hot-melt adhesive 7 is applied in dot form along the peripheral edge region of the insulating substrate 1 in a top view. Although not illustrated, in the application step of the second preferred embodiment, the hot-melt adhesive 7 is applied in dot form along the recess 4a in a bottom view. The hot-melt adhesive 7 is applied at substantially equal intervals.

[0046] As described above, parallelism between the base surface of the housing 4 and the insulating substrate 1 can be maintained, and the thicknesses of the adhesives (the hot melt adhesive 7 and the thermosetting adhesive 8) can be ensured. Furthermore, by increasing the contact area between the insulating substrate 1 and the hot melt adhesive 7 during the temporary fixing step, the concentration of fixing stress can be reduced, and cracking of the insulating substrate 1 can be suppressed. <Fünfte bevorzugte Ausführungsform>

[0047] Next, the fifth preferred embodiment will be described. Fig. Figure 13 is a side view of the insulating substrate 1 after the application step in the fifth preferred embodiment. Note that in the fifth preferred embodiment, the same components as those described in the first to fourth preferred embodiments are designated by the same reference numerals, and their descriptions are omitted.

[0048] In a case where the gap between the insulating substrate 1 and the housing 4 is not constant, stress is concentrated in a portion of the narrow gap during the temporary fixing step, leading to a tear in the insulating substrate 1. On the other hand, as in Fig.As shown in Figure 13, in the fifth preferred embodiment, during the application step of the first and second preferred embodiments (more specifically, the fourth preferred embodiment), the film thickness L1 of the hot melt adhesive 7 is adjusted according to the height of the non-constant gap between the insulating substrate 1 and the housing 4. As a result, it is possible to suppress a concentration of stress at a narrow gap during the temporary fixing step.

[0049] Note that each preferred embodiment can be freely combined and each preferred embodiment can be suitably modified or omitted.

[0050] The following sections describe aspects of the present revelation together as appendices. (Appendix 1)

[0051] A method for manufacturing a semiconductor device comprising an insulating substrate and a housing with a depression on a bottom surface, which is fixed to a peripheral edge region of the insulating substrate, wherein the method comprises: a placement step in which the insulating substrate is placed on a housing mounting device; an application step in which a hot melt adhesive with a film thickness L1 is applied to an upper surface of the peripheral edge region of the insulating substrate and then a thermosetting adhesive with a film thickness L2 is applied to a periphery of an area to which the hot melt adhesive is applied, on the upper surface of the peripheral edge region of the insulating substrate; a step for temporary fixing, in which the insulating substrate and the housing are temporarily fixed by positioning the housing so that the recess is located in the peripheral edge region of the insulating substrate, and then securing the housing and the housing mounting device with screws; and a heating step in which the temporarily fixed insulating substrate and the housing are heated to fix the insulating substrate and the housing, where L1 > L2 applies in the step for temporary fixation and L1 = L2 applies in the heating step. (Appendix 2)

[0052] A method for manufacturing a semiconductor device comprising an insulating substrate and a housing with a depression on a bottom surface, which is fixed to a peripheral edge region of the insulating substrate, wherein the method comprises: a placement step in which the insulating substrate is placed on a housing mounting device; an application step in which a hot melt adhesive with a film thickness L1 is applied to the recess of the housing and a thermosetting adhesive with a film thickness L2 is applied to a periphery of a sub-area corresponding to an area to which the hot melt adhesive is applied, on the upper surface of the peripheral edge part of the insulating substrate; a step for temporary fixing, in which the insulating substrate and the housing are temporarily fixed by positioning the housing so that the recess is located in the peripheral edge region of the insulating substrate, and then securing the housing and the housing mounting device with screws; and a heating step in which the temporarily fixed insulating substrate and the housing are heated to fix the insulating substrate and the housing, where L1 > L2 applies in the step for temporary fixation and L1 = L2 applies in the heating step. (Appendix 3)

[0053] The method for manufacturing a semiconductor device according to Appendix 1, wherein in the application step the hot melt adhesive is applied to four corners of the insulating substrate in a top view in an L-shape. (Appendix 4)

[0054] The method for manufacturing a semiconductor device according to Appendix 2, wherein in the application step the hot melt adhesive is applied to partial areas in the recess corresponding to four corners of the insulating substrate in a view from below in an L-shape. (Appendix 5)

[0055] The method for manufacturing a semiconductor device according to Appendix 1, wherein in the application step the hot melt adhesive is applied in dot form along the peripheral edge region of the insulating substrate in top view. (Appendix 6)

[0056] The method for manufacturing a semiconductor device according to Appendix 2, wherein in the application step the hot melt adhesive is applied in dot form along the recess in a view from below. (Appendix 7)

[0057] The method for manufacturing a semiconductor device according to Appendix 1 or 2, wherein in the application step the film thickness L1 of the hot melt adhesive is adjusted according to a non-constant height of a gap between the insulating substrate and the housing.

[0058] While the revelation has been presented and described in detail, the preceding description is illustrative in all aspects and not limiting. It is therefore understood that numerous modifications and variations can be conceived.

Claims

[1] Method for manufacturing a semiconductor device (100) comprising an insulating substrate (1) and a housing (4) with a recess (4a) on a bottom surface, which is fixed to a peripheral edge region of the insulating substrate (1), wherein the method comprises: a placement step in which the insulating substrate (1) is placed on a housing mounting device (30); an application step in which a hot melt adhesive (7) with a film thickness L1 is applied to an upper surface of the peripheral edge region of the insulating substrate (1) and then a thermosetting adhesive (8) with a film thickness L2 is applied to a periphery of a region on which the hot melt adhesive (7) is applied, on the upper surface of the peripheral edge region of the insulating substrate (1); a step for temporary fixing in which the insulating substrate (1) and the housing (4) are temporarily fixed by positioning the housing (4) such that the recess (4a) is positioned in the peripheral edge region of the insulating substrate (1), and then fastening the housing (4) and the housing mounting device (30) with screws; and a heating step in which the temporarily fixed insulating substrate (1) and the housing (4) are heated in order to fix the insulating substrate (1) and the housing (4), where L1 > L2 applies in the step for temporary fixation and L1 = L2 applies in the heating step. [2] Method for manufacturing a semiconductor device (100) comprising an insulating substrate (1) and a housing (4) with a recess (4a) on a bottom surface, which is fixed to a peripheral edge region of the insulating substrate (1), wherein the method comprises: a placement step in which the insulating substrate (1) is placed on a housing mounting device (30); an application step in which a hot melt adhesive (7) with a film thickness L1 is applied to the recess (4a) of the housing (4) and a thermosetting adhesive (8) with a film thickness L2 is applied to a periphery of a sub-area corresponding to an area on which the hot melt adhesive (7) is applied, on the upper surface of the peripheral edge part-area of ​​the insulating substrate (1); a step for temporary fixing in which the insulating substrate (1) and the housing (4) are temporarily fixed by positioning the housing (4) such that the recess (4a) is positioned in the peripheral edge region of the insulating substrate (1), and then fastening the housing (4) and the housing mounting device (30) with screws; and a heating step in which the temporarily fixed insulating substrate (1) and the housing (4) are heated to fix the insulating substrate (1) and the housing (4), where L1 > L2 in the temporary fixing step and L1 = L2 applies in the heating step. [3] Method for manufacturing a semiconductor device according to claim 1, wherein in the application step the hot melt adhesive (7) is applied to four corners of the insulating substrate (1) in an L-shape in top view. [4] Method for manufacturing a semiconductor device according to claim 2, wherein in the application step the hot melt adhesive (7) is applied to partial areas in the recess (4a) corresponding to four corners of the insulating substrate (1) in a view from below in an L-shape. [5] Method for manufacturing a semiconductor device according to claim 1, wherein in the application step the hot melt adhesive (7) is applied in dot form along the peripheral edge region of the insulating substrate (1) in top view. [6] Method for manufacturing a semiconductor device according to claim 2, wherein in the application step the hot melt adhesive (7) is applied along the recess (4a) in a view from below in dot form. [7] Method for manufacturing a semiconductor device according to claim 1 or 2, wherein in the application step the film thickness L1 of the hot melt adhesive (7) is adjusted according to a non-constant height of a gap between the insulating substrate (1) and the housing (4).

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