Storage devices over multiple semiconductor dies and manufacturing processes thereof

Abstract

A semiconductor device comprises a first semiconductor die having several first transistors, each of which has a first gate structure element; and a second semiconductor die coupled to the first semiconductor die via several bump structures and having several second transistors, each of which has a second gate structure element that is smaller than the first gate structure element. At least one subset of the several first transistors, which operatively act as one or more current switches, is configured to receive a first supply voltage and electrically couple the first supply voltage to a subset of the several second transistors for a time period.