Optoelectronic arrangement and method for producing an optoelectronic arrangement

Abstract

Optoelectronic arrangement comprising - a shaped body (2) designed as a carrier with a cover surface (2a) and a bottom surface (2b) facing away from the cover surface (2a), - a first pixel group (41) to which a plurality of pixels (1) are assigned, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10) which emits and / or absorbs electromagnetic radiation during operation of the arrangement, - a plurality of separation structures (3) arranged between the pixels (1), and - at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact point (52) which is freely accessible on the bottom surface (2b), wherein - the pixels (1) of the first pixel group (41) are arranged next to one another on the cover surface (2a), - the first semiconductor regions (11) and / or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), - a first contact structure (51, 52, 53) is uniquely assigned to the first pixel group (41), and - the first semiconductor regions (11) of the pixels (1) of the first pixel group (41) are electrically connected to one another exclusively by means of the first contact plane (51) and can be electrically contacted by means of the first contact point (52), - the separation structures (3) are formed by trenches which are free of the material of the pixels (1), - the first semiconductor regions (11), the active regions (10) and / or the second semiconductor regions (12) of adjacent pixels are spatially separated from one another by the trenches, and - the shaped body (2) extends into the trenches.

Description

[0001] The document DE 10 2008 016 525 A1 describes an optoelectronic semiconductor body and a method for producing such a body, and the document DE 10 2009 036 621 A1 describes a method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component.

[0002] One problem to be solved is to provide an optoelectronic arrangement that can be manufactured in a simplified manner. Another problem to be solved is to provide a simplified method for manufacturing an optoelectronic arrangement. This problem is solved, inter alia, by an optoelectronic arrangement according to claim 1 and a manufacturing method according to claim 13. Further embodiments are the subject of the dependent claims.

[0003] An optoelectronic arrangement is specified. The optoelectronic arrangement can be designed to emit and / or absorb electromagnetic radiation. The optoelectronic arrangement can be a light-emitting diode arrangement, such as a display, and / or a photodiode arrangement.

[0004] The optoelectronic arrangement comprises a molded body with a top surface and a bottom surface facing away from the top surface. The molded body is designed as a carrier for the optoelectronic arrangement. The molded body can be formed from a plastic material and / or a resin, in particular a synthetic resin, or consist of one of these materials. In particular, the molded body is not a growth substrate for the optoelectronic arrangement. The molded body can be electrically insulating. Furthermore, the molded body can be formed in one piece, i.e., coherently. For example, the molded body is a potting compound. Furthermore, the molded body can be layered, for example as a conformally overmolded, preferably electrically insulating layer.

[0005] The molded body has a main extension plane in which it extends in lateral directions. The top surface and the bottom surface of the molded body each form a main plane of the molded body. Perpendicular to the main extension plane, in a vertical direction, the molded body has a thickness. The thickness of the molded body is small compared to the maximum extension of the molded body in the lateral directions. For example, the thickness of the molded body is at least 80 µm and at most 120 µm. Alternatively, the thickness of the molded body can be at least 1 µm and at most 10 µm, preferably at most 8 µm.

[0006] The optoelectronic arrangement has a first pixel group. A plurality of pixels are assigned to the first pixel group. In other words, the first pixel group comprises a plurality of pixels. Each of the pixels of the first pixel group has a first semiconductor region, a second semiconductor region, and an active region. The active region emits and / or absorbs the electromagnetic radiation during operation of the arrangement. The first semiconductor region, the second semiconductor region, and the active region can each be formed with or consist of a (compound) semiconductor material. For example, the first semiconductor region, the second semiconductor region, and the active region are each based on GaN. The pixels can be individual segments of the arrangement.The pixels can each have a maximum extension of at least 30 µm and at most 300 µm, preferably at most 100 µm and particularly preferably at most 50 µm, in the lateral directions.

[0007] A "pixel group" can be, in this context and in the following, a set of pixels that are grouped based on common properties. The common properties are, for example, a common electrical contact between the first semiconductor regions and / or the second semiconductor regions of the pixels in a pixel group. The first semiconductor regions and / or the second semiconductor regions of the pixels in a pixel group can then be at a common electrical potential. Alternatively or additionally, the common properties can be provided by a common spatial arrangement of the pixels in a pixel group, such as an arrangement in a common row or a common column of a matrix.

[0008] The optoelectronic arrangement comprises a plurality of separation structures. The separation structures are arranged between the pixels. The separation structures can serve to spatially separate at least parts of the pixels. Furthermore, the pixels can be optically decoupled from one another by means of the separation structures.

[0009] The optoelectronic arrangement has at least one first contact structure. The at least one first contact structure comprises a first contact level and a first contact point. The first contact point is freely accessible on the bottom surface. In particular, the first contact point on the bottom surface can be electrically contacted from the outside. The first contact structure can be electrically conductive. In particular, the first contact level and the first contact point can be formed with or consist of at least one metal. All components of the first contact structure can be at a common electrical potential. In other words, the first contact level, the first contact point, and optionally further components of the first contact structure are electrically conductively connected to one another.

[0010] The pixels are arranged next to one another on the cover surface. "Arranged on the cover surface" can mean, here and below, that the pixels are arranged in a common plane that runs parallel to the cover surface within the manufacturing tolerances. Further components of the arrangement, such as the first contact plane and / or an insulation layer, can then be arranged between the pixels and the molded body. Alternatively or additionally, the pixels can directly border the cover surface, at least in places.

[0011] Each of the pixels can have a radiation passage surface facing away from the molded body. The electromagnetic radiation emitted and / or absorbed by the active region passes through the radiation passage surface of the pixel. The radiation passage surfaces can, for example, form a common luminous area of ​​the arrangement, which is segmented due to the radiation passage surfaces of the pixels being separated by the separation structures.

[0012] The pixels can also be arranged laterally spaced from one another. For example, a lateral distance between two adjacent pixels is at least 1 µm and at most 20 µm, preferably at most 7 µm, and particularly preferably at most 5 µm. The lateral distance here and below is the minimum distance between two outer surfaces of the pixels in one of the lateral directions. Furthermore, here and below, pixels can be "adjacent" if they are arranged directly next to one another in the lateral directions. At least one of the separation structures can be arranged between each two pixels. For example, the pixels are arranged in a matrix-like manner, i.e., in rows and columns, on the cover surface.

[0013] The first semiconductor regions and / or the second semiconductor regions of adjacent pixels are electrically insulated from one another by means of the separation structures. For this purpose, the separation structures can comprise an electrically insulating material. The electrically insulating material can be, for example, a passivation layer formed with an oxide and / or a nitride, a plastic, or a gas, such as an ambient atmosphere in an apparatus in which the arrangement is manufactured. The first semiconductor regions and / or the second semiconductor regions of adjacent pixels are spatially separated from one another by means of the separation structures.

[0014] A first contact structure is uniquely assigned to the first pixel group. In particular, it is possible for a first contact point to be uniquely assigned to the first pixel group.

[0015] The pixels of the first pixel group are electrically connected to one another exclusively by means of the first contact plane, in particular the first contact plane of the first contact structure uniquely assigned to this first pixel group. The first contact plane can be in direct contact, at least in some regions, with the first semiconductor regions of the pixels of the first pixel group. The first semiconductor regions are electrically connected to one another exclusively by means of the first contact plane.

[0016] The first semiconductor regions of the pixels of the first pixel group can be electrically contacted by means of the first contact point, in particular the first contact point of the first contact structure uniquely assigned to this first pixel group. For this purpose, the first contact point can be electrically connected to the first contact level. For example, the arrangement is a surface-mountable device (SMD). Electrical contacting of the first contact point can then be achieved by means of a soldered connection.

[0017] According to at least one embodiment, the optoelectronic arrangement comprises a molded body designed as a carrier with a top surface and a bottom surface facing away from the top surface, a first pixel group, a plurality of isolation structures, and a first contact structure. The first pixel group has a plurality of pixels, each comprising a first semiconductor region, a second semiconductor region, and an active region that emits and / or absorbs electromagnetic radiation during operation of the arrangement. The plurality of isolation structures is arranged between the pixels. The first contact structure has a first contact plane and a first contact point that is freely accessible on the bottom surface. The pixels are arranged next to one another on the top surface. The first semiconductor regions and / or the second semiconductor regions of the adjacent pixels are electrically insulated from one another by means of the isolation structures.A first contact structure is uniquely assigned to the first pixel group. Furthermore, the first semiconductor regions of the pixels of the first pixel group are electrically connected to one another by means of the first contact plane and can be electrically contacted by means of the first contact point.

[0018] According to at least one embodiment of the optoelectronic arrangement, the first contact point comprises the only contact point of the at least one first contact structure that is freely accessible on the bottom surface of the molded body. In other words, the first contact structure has a single first contact point. In particular, it is possible for the first semiconductor regions of the pixels of the first pixel group to be electrically contactable from the outside exclusively via the first contact point.

[0019] According to at least one embodiment of the optoelectronic arrangement, the molded body is designed as a mechanically stabilizing component of the arrangement. Here and in the following, "mechanically stabilizing" means that the mechanical handling of the optoelectronic arrangement is improved by means of the molded body, and thus, for example, a higher external force can act on the optoelectronic arrangement without destroying it. In particular, the molded body can make the optoelectronic arrangement mechanically self-supporting, meaning that the optoelectronic arrangement can be handled, for example, within the scope of a manufacturing process using tools such as tweezers, without the need for an additional supporting element.

[0020] The use of a molded body as a mechanically stabilizing element enables, in particular, simplified production of the optoelectronic device. Furthermore, the molded body guarantees high mechanical stability.

[0021] It is further possible for a conversion material to be applied to at least one of the radiation passage surfaces, preferably to at least 50% of the radiation passage surfaces, and particularly preferably to all radiation passage surfaces, for wavelength conversion of the electromagnetic radiation emitted and / or absorbed by the active regions. For example, the conversion material can be applied to the radiation passage surfaces as a potting compound. The potting compound can be formed from a silicone or an epoxy resin into which wavelength-converting particles, such as phosphor particles or quantum dots, are incorporated. Alternatively, the conversion material can be present as a converter plate, in particular as a ceramic converter plate. In particular, it is possible for a single converter plate to be applied to at least 50% of the radiation passage surfaces.The converter plate can then also have a mechanically stabilizing effect. For example, the converter plate can be manufactured using electrophoresis. Furthermore, the conversion material can be applied as a layer to the radiation passage surfaces, for example, using spray coating.

[0022] According to at least one embodiment of the optoelectronic arrangement, the molded body is formed with or consists of at least one of the following materials: epoxy resin, silicone resin. These materials can be applied in particular by means of a compression molding process, an injection molding process, and / or a transfer molding process.

[0023] The separation structures are formed by trenches that are free of the pixel material. The first semiconductor regions, the active regions, and / or the second semiconductor regions of adjacent pixels are spatially separated from one another by the trenches. In particular, the first semiconductor regions, the active regions, and / or the second semiconductor regions are not connected to one another by a semiconductor material. The trenches can be, for example, etched trenches that have been introduced during a manufacturing process into a semiconductor layer sequence from which the first semiconductor regions, the active regions, and / or the second semiconductor regions can emerge.

[0024] The molded body extends into the trenches. In other words, the molded body is arranged at least partially between the pixels. In particular, the trenches can be completely filled with the molded body. The molded body inserted into the trenches can anchor the molded body to the pixels. Furthermore, the mechanical stability of the arrangement can be further increased by inserting the molded body into the trenches.

[0025] The molded body can be designed to be radiation-opaque. An optical separation of the pixels can then take place, for example, by means of the molded body introduced into the trenches. Furthermore, it is possible for the molded body to be designed to reflect radiation. For example, radiation-reflecting particles can be embedded in the molded body for this purpose. Here and below, a component of the arrangement is “radiation-opaque” if it has a transmittance of at most 40%, preferably at most 20%, and particularly preferably at most 10%, for the electromagnetic radiation emitted and / or absorbed by the active regions. Furthermore, a component of the arrangement is here and below “radiation-reflecting” if it has a reflectance of at least 60%, preferably at least 80%, and particularly preferably at least 90%, for the electromagnetic radiation.

[0026] According to at least one embodiment of the optoelectronic arrangement, the first semiconductor regions and the active regions of adjacent pixels are spatially completely separated from one another. In other words, the first semiconductor regions and the active regions of adjacent pixels are not connected to one another by a semiconductor material. Furthermore, the second semiconductor regions of adjacent pixels are connected to one another via intermediate regions. The intermediate regions are formed with the material of the second semiconductor regions. The second semiconductor regions of the pixels can thus be formed contiguously and integrally. In this case, it is possible for the intermediate regions to have a smaller extent in the vertical direction than the second semiconductor regions.

[0027] According to at least one embodiment of the optoelectronic arrangement, a space between the pixels is at least partially free of a semiconductor material. In particular, the space between the pixels can be completely free of a semiconductor material. In other words, it is possible for the first semiconductor regions, the active regions, and the second regions of the pixels not to be connected to one another by a semiconductor material. The space between the pixels can be the separation structures formed by the trenches.

[0028] According to at least one embodiment of the optoelectronic arrangement, a plurality of first pixel groups is present. A first contact structure is uniquely assigned to each of the first pixel groups. The pixels of each of the first pixel groups can be electrically conductively connected to one another by means of the first contact plane uniquely assigned to the respective first pixel group. Furthermore, the pixels of each of the first pixel groups can be electrically contactable with the first contact point uniquely assigned to the respective first pixel group.

[0029] According to at least one embodiment, the optoelectronic arrangement comprises a plurality of second pixel groups. Furthermore, the arrangement comprises at least one second contact structure, which has at least one second contact plane and a second contact point. The second contact point can be the only contact point of the second contact structure that is freely accessible on the bottom surface. The second contact point is freely accessible on the bottom surface. In other words, the second contact point can be electrically contacted on the bottom surface. The second contact structure can comprise the same materials or be formed from the same materials as the first contact structure.

[0030] According to at least one embodiment of the optoelectronic arrangement, at least one pixel of each of the first pixel groups is uniquely assigned to each second pixel group. Conversely, it is possible for a first pixel group to be uniquely assigned to each pixel of the second pixel group. In other words, each pixel of the optoelectronic arrangement is assigned a single first pixel group and a single second pixel group. For example, the pixels are arranged in a matrix on the cover surface, with the pixels of the matrix arranged in a row each being assigned to one of the first pixel groups, while the pixels of the matrix arranged in a column each being assigned to one of the second pixel groups.

[0031] Furthermore, each second pixel group is uniquely assigned a second contact structure. The second semiconductor regions of the pixels of the second pixel group are electrically connected to one another by means of the second contact plane and can be electrically contacted by means of the second contact point. In particular, the pixels of the second pixel group can be electrically contacted with the second contact point of the second contact point assigned to this second pixel group. For this purpose, the second contact point can have the same structure as the first contact point.

[0032] According to at least one embodiment of the optoelectronic arrangement, the at least one first contact structure has at least one first via that extends completely through the molded body in the vertical direction. Alternatively or additionally, the optionally present second contact structure can have at least one second via that extends completely through the molded body in the vertical direction. The first via and / or the optionally second via can have the same extent in the vertical direction as the molded body. The first via and / or the optionally second via is electrically conductively connected to the first contact level and / or to the second contact level, respectively.Furthermore, the first via or, if applicable, the second via is electrically conductively connected to the first contact point or, if applicable, to the second contact point.

[0033] For example, the via extends from the bottom surface of the molded body completely through the molded body. Particularly preferably, the via extends from the bottom surface of the molded body completely through the molded body and through the active layer of the semiconductor layer sequence. In this case, the via is preferably formed by a single electrically conductive element, for example, made of a metal. The contact structure can be formed by the via, the contact point, and the contact level. According to one embodiment, the via is free of electronic components, such as switches, transistors, or the like.

[0034] It is particularly possible for only the at least one first and the at least one second contact point to be provided for electrically contacting the arrangement. The arrangement then comprises exclusively electrical contact points that are arranged on the base surface and are freely accessible there. The electrical connection of the at least one first and the at least one second contact point to the first and second semiconductor regions, in particular the first and second contact levels, can be made wirelessly by means of the at least one first and the at least one second through-hole connection. The arrangement is, in particular, free of wire contact.

[0035] By using vias to electrically connect the contact points and the semiconductor regions, it is possible, in particular, to provide an arrangement that is easy to contact without wire contacts. The electrical contact can be made exclusively on the bottom surface of the molded body. This makes it easy to realize an arrangement that includes, in particular, pixels arranged in a matrix. The optoelectronic arrangement can therefore be a so-called flip chip.

[0036] According to at least one embodiment of the optoelectronic arrangement, the material of the first via and / or the optionally second via is galvanically deposited. The first and / or second via can each comprise at least one metal, in particular copper, nickel, tin, and / or gold. For example, the first and / or second via are galvanically deposited on a portion of the first contact level and / or the second contact level.

[0037] It is also possible for the at least one first via and / or the optionally at least one second via to form a mechanically stabilizing component of the arrangement. For example, the first via and / or the second via, together with the molded body, form the only mechanically stabilizing component of the arrangement.

[0038] According to at least one embodiment of the optoelectronic arrangement, all first semiconductor regions, all second semiconductor regions, and all active regions are formed from a common, in particular single, first semiconductor layer, a common, in particular single, second semiconductor layer, and a common, in particular single, active layer, respectively. In other words, the pixels are created by structuring and at least partially removing a semiconductor layer sequence comprising a first semiconductor layer, a second semiconductor layer, and an active layer.

[0039] In particular, it is possible for the pixels to be applied together, i.e. in a wafer composite, to the top surface of the molded body. For example, the structuring of the semiconductor layer sequence takes place after the molded body has been applied. This makes it possible to provide an arrangement with a segmented luminous area in which neighboring pixels have a small lateral distance. The lateral distances between the pixels are then limited, for example, only by the technology used for segmentation. For example, when using a photographic technology, the lateral distance between neighboring pixels is at most 5 µm in approximately 99.7% of cases (so-called 3-sigma range). Furthermore, the creation of pixels with small dimensions in the lateral directions is possible.In contrast to the segmented pixels described above, the lateral spacing of pixels applied to the cover surface by individually positioning the previously generated pixels is at least 10 µm.

[0040] Furthermore, a method for producing an optoelectronic arrangement is specified. The optoelectronic arrangement can preferably be produced using the method described here. This means that all features disclosed for the arrangement are also disclosed for the method, and vice versa.

[0041] According to at least one embodiment of the method, a semiconductor layer sequence is first provided on a growth substrate. The semiconductor layer sequence comprises a first semiconductor layer, a second semiconductor layer, and an active layer. The active layer can be provided for the emission and / or absorption of electromagnetic radiation.

[0042] According to at least one embodiment of the method, the separation structures and the pixels are created. For this purpose, the semiconductor layer sequence is removed in places using an etching process. In particular, trenches can be created in the semiconductor layer sequence, which can form separation structures between the pixels. The pixels can be structured, for example, using a photo technique.

[0043] According to at least one embodiment of the method, the molded body is produced on a side of the semiconductor layer sequence facing away from the growth substrate. In particular, it is possible for the molded body to be produced on the side of the pixels facing away from the growth substrate. "Producing" the molded body here and below means that the material of the molded body is applied to the semiconductor layer sequence. In particular, the material of the molded body for producing the molded body is in liquid, granular, pasty, and / or gaseous form.

[0044] According to at least one embodiment of the method, the growth substrate is removed. The removal can be carried out, for example, using an etching process or by means of laser lift-off. The optoelectronic arrangement can thus be free of a growth substrate.

[0045] The process for manufacturing the optoelectronic device comprises the following steps: - Providing a semiconductor layer sequence comprising a first semiconductor layer, a second semiconductor layer and an active layer on a growth substrate, - Creating the separation structures and the pixels by removing the semiconductor layer sequence in places using an etching process, - producing the shaped body on a side of the semiconductor layer sequence facing away from the growth substrate, and - Removal of the growth substrate.

[0046] It is possible that the procedural steps are carried out in the order given.

[0047] According to at least one embodiment of the method, the application of the molded body and the removal of the growth substrate take place before the creation of the separation structures and the pixels. In other words, the structuring of the pixels takes place after the application of the molded body. In particular, the etching process is performed after the molded body has been created on the semiconductor layer sequence.

[0048] According to at least one embodiment of the method, the molded body is applied using a casting process. Casting processes are considered, for example, injection molding processes, compression molding processes, or transfer molding processes.

[0049] Alternatively or additionally, it is possible to laminate the molded body as a film, to apply it as a lacquer and / or to apply it by means of chemical or physical vapor deposition.

[0050] In the following, the optoelectronic arrangement described here and the method for producing an optoelectronic arrangement described here are explained in more detail using exemplary embodiments and the associated figures. The Fig. 1 to 7 show embodiments of optoelectronic arrangements described here using schematic plan views and sectional views. The Fig. 8 shows an embodiment of a method described here for producing an optoelectronic arrangement using schematic sectional views.

[0051] Identical, similar, or functionally identical elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or clarity.

[0052] Based on the schematic sectional view of the Fig. 1A and the schematic views of the Fig. 1B and Fig. 1C, an embodiment of an optoelectronic arrangement described here is explained in more detail. Fig. The section through the arrangement shown in Figure 1A is taken along a first section line AB. Fig. 1B shows a top view, while the Fig. 1C shows a view from below. Here and below, a view "from above" refers to a view of radiation passage surfaces 1a of the pixels 1 of the optoelectronic arrangement, while a view "from below" refers to a view of a side of the arrangement facing away from the radiation passage surfaces 1a.

[0053] The optoelectronic assembly comprises a molded body 2 with a top surface 2a and a bottom surface 2b facing away from the top surface 2a. The bottom surface 2b is freely accessible. The molded body 2 serves to mechanically stabilize the assembly. The molded body 2 extends along two lateral directions x, y, which define a main extension plane of the molded body. The top surface 2a and the bottom surface 2b each form a main plane of the molded body.

[0054] A plurality of pixels 1 are attached to the cover surface 2a. The pixels 1 are assigned to a first pixel group 41. Furthermore, each pixel 1 is assigned a second pixel group 42. The optoelectronic arrangement of the Fig. 1A, Fig. 1B and Fig. 1C comprises - purely by way of example - a single first pixel group 41, wherein all pixels 1 of the arrangement of Fig. 1A, Fig. 1B and Fig. 1C are assigned to the first pixel group 41. Each of the second pixel groups 42 is then assigned a single pixel 1.

[0055] Each pixel 1 comprises a first semiconductor region 11, an active region 10, and a second semiconductor region 12. The first semiconductor region 11 can be formed, for example, with an n-conducting semiconductor material. The second semiconductor region 12 can be formed with a p-conducting semiconductor material.

[0056] Furthermore, each pixel 1 has the radiation passage surface 1a facing away from the molded body 2. The second semiconductor region 12 is roughened at the radiation passage surface 1a. The roughened portions serve as coupling-out and coupling-in structures, respectively, by means of which the transmission of the electromagnetic radiation through the radiation passage surface 1a is improved.

[0057] Between two adjacent pixels 1 there are separation structures 3. Side surfaces 1b of the pixels 1 directly border on the separation structures 3. In the Fig. 1A, Fig. 1B and Fig. In the embodiment shown in Fig. 1C, the separation structures 3 are formed as trenches, wherein the first semiconductor regions 11, the active regions 10 and the second semiconductor regions 12 are completely separated by the trenches.

[0058] The optoelectronic arrangement comprises a first contact structure 51, 52, 53, which is uniquely assigned to the first pixel group 41. Furthermore, the arrangement comprises a plurality of second contact structures 61, 62, 63, wherein each of the second pixel groups 42 of the arrangement is uniquely assigned a second contact structure 61, 62, 63.

[0059] The first contact structure 51, 52, 53 comprises a first contact level 51, a first contact point 52, and at least one first via 53. The first contact level 51 is formed in a continuous manner. In particular, an outer surface of the first contact level 51 is formed in a multiply continuous manner when viewed from the vertical direction z. The first contact level 51 is freely accessible within the trenches of the isolation structures 3. Alternatively, it is possible for a dielectric to be applied to the first contact level 51 within the trenches of the isolation structures 3. In this case, the first contact level 51 is not freely accessible in the region of the trenches of the isolation structures 3. The first contact level 51 can be electrically conductively connected to the first semiconductor regions 11 of the pixels 1 and, in particular, can be in direct contact. For example, the first semiconductor regions 11 of the pixels 1 can be at a common electrical potential.

[0060] The first contact level 51 can be designed to reflect radiation. The first contact level 51 can be formed with a metal, such as silver or aluminum, or can consist of a metal.

[0061] The first contact level 51 is electrically connected to the first contact point 52 by means of the first via 53. For example, the first via 53 is formed from the same material as the first contact level 51. The first via 53 can be galvanically applied to the first contact level 51. For example, the first via 51 can be galvanically deposited in a manufacturing process in a process step that is carried out before the production of the molded body 2. In particular, the first via 53 can extend completely through the molded body 2 in the vertical direction z.

[0062] The first contact point 52 is freely accessible on the bottom surface 2b and in particular can be electrically contacted (compare Fig. 1A and Fig. 1C). The first contact point 52 may be formed with or consist of at least one electrically conductive material, such as aluminum, silver, palladium, gold, platinum, titanium, tin, copper, or nickel.

[0063] An insulation layer 71 formed from an electrically insulating material, such as silicon nitride or silicon oxide, is applied between the molded body 2 and the first contact level 51, and between the molded body 2 and the pixels 1. The insulation layer 71 can serve to electrically insulate the material of the pixels 1, so that an electrical connection is established solely by means of the first contact structure 51, 52, 53 and the second contact structure 61, 62, 63. In particular, the insulation layer 71 can completely cover the cover surface 2a of the molded body 2 and be in direct contact with the cover surface 2a. Furthermore, it is possible for areas of an outer surface of the first semiconductor region 11 facing the molded body 2 that are not covered by the first contact level 51 to be covered by the insulation layer 71 and to be in direct contact with it.

[0064] The second contact structure 61, 62, 63 comprises a second contact plane 61, a second contact point 62, and a second via 63. The second via 63 extends completely through the molded body 2 in the vertical direction z. The second via 63 is also electrically conductively connected to the second contact point 62. The second contact point 62 is freely accessible on the bottom surface 2b and, in particular, can be electrically contacted (cf. Fig. 1A and Fig. 1C).

[0065] In the present case, the second contact level 61 is also formed as an electrical via, wherein the second contact level 61 extends from the second via 63 through the insulation layer 71, the first semiconductor region 11, and the active region 10 into the second semiconductor region 12 of the pixel 1 assigned to the second via 63. The second contact level 62 and the second via 63 can be formed integrally with one another. The second contact level 61 can be electrically insulated from the first semiconductor region 11 and the active region 10 by means of a further insulating material (not shown in the figures).

[0066] The first contact level 51 surrounds the second vias 63 in a frame-like manner. In other words, in a top view, the second vias 63 are at least partially, preferably completely, enclosed by the first contact level 51 in the lateral directions x, y. Furthermore, the first via 53 is arranged at a laterally spaced distance from one of the second vias 63.

[0067] The molded body 2 completely surrounds the first via 53 and the second vias 63 in lateral directions x, y. In particular, the first and second vias 53, 63 are laterally embedded by the molded body 2.

[0068] Based on the schematic views of the Fig. 2A, Fig. 2B, Fig. 2C and Fig. 2D, further embodiments of an optoelectronic arrangement described here are explained in more detail. A top view is shown in each case. The illustrated embodiments can, for example, be arranged along the first section line AB in connection with the Fig. 1A discussed structure.

[0069] The Fig. 2A, Fig. 2B, Fig. 2C and Fig. The optoelectronic arrangements shown in Figure 2D each have a plurality of pixels 1, which are each assigned to at least one first pixel group 41 and at least one second pixel group 42. The pixels 1 are arranged next to one another in the lateral directions x, y. The structure of the embodiments of the optoelectronic arrangement of the Fig. 2A, Fig. 2B, Fig. 2C and Fig. 2D as follows.

[0070] In the embodiment of the Fig. 2A, the pixels 1 have the same size and, in particular, the same dimensions in the lateral directions x, y. The pixels 1 are arranged in a matrix-like manner in rows 43 and columns 44. The first contact point 51 extends across several pixels 1 of a column 44. Alternatively, the arrangement may have several first contact points 51. In this case, the pixels 1 can be assigned to several first pixel groups 41, with each first pixel group 41 being uniquely assigned a first contact point 51.

[0071] The pixel 1 of the embodiment of the Fig. 2B are also arranged in a matrix-like manner, wherein the pixels 1 of different rows 43 of the matrix have different extensions in one of the lateral directions x, y.

[0072] In the embodiment of the Fig. 2C, the pixels 1 are arranged in rows, wherein the number of pixels 1 differs from at least two rows 43 and the pixels 1 of different rows 43 have different extensions in the lateral directions x, y.

[0073] The pixel 1 of the embodiment of the Fig. 2D have different shapes and different dimensions in the lateral directions x, y. At least one of the pixels 1 can be elliptical, in particular circular, in a top view. The pixels 1 adjacent to the elliptical pixel 1 have at least one curved side surface 1b.

[0074] Based on the Fig. A further exemplary embodiment of an optoelectronic arrangement described here is explained in more detail in the schematic top view shown in Figure 3. The arrangement comprises a plurality of pixels 1 arranged in a matrix-like manner in rows 43 and columns 44. Purely by way of example, all pixels 1 are assigned to a single first pixel group 41. The dashed lines between the pixels indicate that the number of rows 43 and columns 44, and in particular the number of pixels 1, can be scaled as desired. In particular, the number of rows 43 and columns 44 can be adapted to the respective technical requirement. All pixels 1 are applied to the common molded body 2. The molded body 2 can project beyond the pixels 1 in the lateral directions x, y.

[0075] Based on the Fig. A further embodiment of an optoelectronic device described here is explained in more detail in the schematic top view shown in Figure 4. The pixels 1 of the device are again arranged in a matrix-like manner in rows 43 and columns 44. In contrast to the Fig. In the embodiment shown in Figure 3, pixels 1 are each assigned to a row 43 of a first pixel group 41, and pixels 1 are each assigned to a column 44 of a second pixel group. Each pixel 1 is assigned a first pixel group 41 and a second pixel group 42.

[0076] The electrical contacting of the pixels 1 of the first pixel group 41 is effected by means of a first contact structure 51, 52, 53, each of which has a first contact level 51 and a contact point 52. Furthermore, the electrical contacting of the pixels 1 of the second pixel group 42 is effected by means of a second contact structure 61, 62, 63, each of which has a second contact level 61 and a second contact point 62. The second semiconductor regions 12 of the pixels 1 of each of the second pixel groups 42 are electrically conductively connected to one another by means of the second contact level 62 assigned to the second pixel group 42.

[0077] By such a division into first pixel groups 41, each of which is assigned to a row 43, and second pixel groups 42, each of which is assigned to a column 44, it is possible to electrically control the pixels 1 individually by means of a small number of first and second contact points 52, 62.

[0078] Based on the sectional views of the Fig. 5A, Fig. 5B, Fig. 6A, Fig. 6B and Fig. 7, further embodiments of an optoelectronic device described here are explained in more detail. The sections through the device shown are taken along a Fig. 4 shown second section line CD or along a third section line C'D'.

[0079] Based on the sectional view of the third section line CD, Fig. 5A illustrates an electrical contacting of the pixels 1 of an embodiment of the arrangement described here. The separating structures 3 between the pixels 1 are as in the Fig. 1A. Each second pixel group 42 is uniquely assigned a second contact structure 61, 62, 63 with a second contact point 62, a second contact level 61, and at least one second via 63.

[0080] The second semiconductor regions 12 of the pixels 1 of the respective second pixel group 42 are electrically connected to one another by means of the second contact level 61. In the case of several pixels 1 per second pixel group 42, the second contact level 61 can be the Fig. 1A, and also an integrally formed electrically conductive layer, which is formed, for example, with a metal. The second contact level 61 can be configured to reflect radiation at least in places. The first semiconductor regions 11 of the pixels 1 can furthermore be electrically conductively connected to further pixels 1 of the first pixel group 41 by means of a plurality of first contact levels 51.

[0081] Based on the sectional view of the third section line C'D' of the Fig. 5B, an electrical contacting of the pixels 1 of an embodiment of the arrangement described here is explained in more detail. The electrical contacting and connection of the second semiconductor regions 12 is effected by means of the second contact structure 61, 62, 63. The structure of the second contact structure 61, 62, 63 corresponds to that of the Fig. 5A. The first semiconductor regions 11 can be electrically contacted by means of first contact structures 51, 52, 53, wherein each first pixel group 41 is uniquely assigned a first contact structure 51, 52, 53. The first vias 53 of the first contact structures 51, 52, 53 are each arranged laterally spaced from the second vias 63 of the second contact structure 61, 62, 63.

[0082] Based on the sectional view of the second section line CD, Fig. 6A or the sectional view along the third section line C'D' of the Fig. 6B, a further embodiment of the arrangement described here is explained in more detail. In contrast to the embodiment described in connection with the Fig. 1A, Fig. 5A and Fig. In the embodiments described in FIG. 5B, only the first semiconductor regions 11 and the active regions 12 of adjacent pixels 1 are completely separated from one another by the isolation structures 3 formed as trenches. The second semiconductor regions 12 are connected to one another via intermediate regions 31. The molded body 2 extends into the isolation structures 3 formed as trenches. The isolation structures 3 are thus formed by the molded body 2. Furthermore, the insulation layer 71 is partially arranged in the trenches of the isolation structures 3. Such a formation of the isolation structures 3 is possible for all embodiments of the optoelectronic arrangement described here.

[0083] Based on the sectional view of the second section line CD, Fig. 7, a further embodiment of the arrangement described here is explained in more detail. The embodiment shown essentially corresponds to that of Fig. 6A, wherein the separation structures 3 are now formed by a degenerate semiconductor material 32. For example, regions of the first semiconductor layer 111 are back-sputtered for this purpose during a manufacturing process. The back-sputtering can be carried out, for example, by treating the first semiconductor layer with a plasma, such as an argon plasma, a hydrogen plasma, and / or an oxygen plasma. The treatment results in at least partial destruction of the conductivity of the material of the first semiconductor layer 111 and thus a redoping to the degenerate semiconductor material 32. The degenerate semiconductor material 32 is, in particular, non-conductive.

[0084] Based on the schematic sectional views of the Fig. 8A and Fig. 8B, exemplary embodiments of a method for producing an optoelectronic device described here are explained in more detail. In the first method step of Fig. 8A, a semiconductor layer sequence 111, 101, 121 comprising a first semiconductor layer 111, an active layer 101, and a second semiconductor layer 121 is provided on a growth substrate 8. The molded body 2 has already been produced on a side of the semiconductor layer sequence 111, 101, 121 facing away from the growth substrate 8. Before the molded body 2 is produced, a first contact structure 51, 52, 53 and a second contact structure 61, 62, 63 can be deposited, for example, galvanically, onto the semiconductor layer sequence 111, 101, 121.

[0085] In the Fig. In the process step illustrated in Figure 8B, the growth substrate 8 is removed. Separation structures 3 have been introduced into the semiconductor layer sequence 111, 101, 121 by etching. In particular, the introduction of the separation structures 3 can take place after the application of the molded body 2.

[0086] As an alternative to the Fig. 8A and Fig.8B, the formation of the molded body 2 can also be carried out after the structuring of the pixels 1. The growth substrate 8 is then removed after the formation of the pixels 1. List of reference symbols 1 pixel 10 active area 11 first semiconductor area 12 second semiconductor area 101 active layer 111 first semiconductor layer 121 second semiconductor layer 1a Radiation passage area 1b Side surfaces 2 molded bodies 2a Cover area 2b Floor area 3 Separation structure 31 Intermediate area 32 degenerated area 41 first pixel group 42 second pixel group 43 lines 44 columns 51 first contact level 52 first contact point 53 first via 61 second contact level 62 second contact point 63 second via 71 Insulation layer 8 Growth substrate AB first cutting line CD second cutting line C'D' third cutting line x, y lateral directions z vertical direction

Claims

[1] Optoelectronic device comprising - a shaped body (2) designed as a carrier with a cover surface (2a) and a bottom surface (2b) facing away from the cover surface (2a), - a first pixel group (41) to which a plurality of pixels (1) are assigned, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10) which emits and / or absorbs electromagnetic radiation during operation of the arrangement, - a plurality of separation structures (3) arranged between the pixels (1), and - at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact point (52) which is freely accessible on the bottom surface (2b), wherein - the pixels (1) of the first pixel group (41) are arranged next to one another on the cover surface (2a), - the first semiconductor regions (11) and / or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), - a first contact structure (51, 52, 53) is uniquely assigned to the first pixel group (41), and - the first semiconductor regions (11) of the pixels (1) of the first pixel group (41) are electrically connected to one another exclusively by means of the first contact plane (51) and can be electrically contacted by means of the first contact point (52), - the separation structures (3) are formed by trenches which are free of the material of the pixels (1), - the first semiconductor regions (11), the active regions (10) and / or the second semiconductor regions (12) of adjacent pixels are spatially separated from one another by the trenches, and - the shaped body (2) extends into the trenches. [2] Arrangement according to the preceding claim, in which the first contact point (52) is the only contact point of the at least one first contact structure (51, 52, 53) that is freely accessible on the bottom surface (2b). [3] Arrangement according to one of the preceding claims, in which the shaped body (2) is designed as a mechanically stabilizing component of the arrangement. [4] Arrangement according to one of the preceding claims, in which the shaped body (2) is formed with or consists of at least one of the following materials: epoxy resin, silicone resin. [5] Arrangement according to one of the preceding claims, in which the first semiconductor regions (11) and the active regions (10) of adjacent pixels (1) are spatially completely separated from one another by the separation structures (3) and in which the second semiconductor regions (12) of adjacent pixels (1) are connected to one another via intermediate regions (31) which are formed with the material of the second semiconductor regions (12). [6] Arrangement according to one of the preceding claims, in which a space between the pixels (1) is at least partially free of a semiconductor material. [7] Arrangement according to one of the preceding claims, in which a plurality of first pixel groups (41) are present, each first pixel group (41) being uniquely assigned a first contact structure (51, 52, 53). [8] Arrangement according to one of the preceding claims, further comprising - a plurality of second pixel groups (42), - at least one second contact structure (61, 62, 63) having at least one second contact plane (61) and a second contact point (62) which is freely accessible on the bottom surface (2b) of the shaped body (2), wherein - each second pixel group (42) is uniquely assigned at least one pixel (1) of each of the first pixel groups (41) - each second pixel group (42) is uniquely assigned a second contact structure (61, 62, 63), - the second semiconductor regions (12) of the pixels (1) of the second pixel group (42) are electrically conductively connected to one another by means of the second contact plane (61) and can be electrically contacted by means of the second contact point (62). [9] Arrangement according to one of the preceding claims, in which the at least one first contact structure (51, 52, 53) and / or if present the at least one second contact structure (61, 62, 63) has at least one first via (53) or optionally at least one second via (63) which extends completely through the molded body (2) in the vertical direction (z), wherein the first via (53) or optionally the second via (63) is electrically conductively connected to the first contact point (52) or optionally to the second contact point (62). [10] Arrangement according to the preceding claim, in which the material of the first via (53) and / or the optionally second via (63) is galvanically deposited. [11] Arrangement according to one of the preceding claims, which is free from wire contact. [12] Arrangement according to one of the preceding claims, in which all first semiconductor regions (11), all second semiconductor regions (12) and all active regions (10) respectively originate from a common first semiconductor layer (111), a common second semiconductor layer (121) and a common active layer (101). [13] A method for producing an optoelectronic device according to any one of the preceding claims, comprising the following steps: - Providing a semiconductor layer sequence (111, 121, 101) comprising a first semiconductor layer (111), a second semiconductor layer (121) and an active layer (101) on a growth substrate (8), - producing the separation structures (3) and the pixels (1) by removing the semiconductor layer sequence (111, 121, 101) in places using an etching process, - producing the shaped body (2) on a side of the semiconductor layer sequence (111, 121, 101) facing away from the growth substrate (8), and - Removal of the growth substrate (8). [14] Method according to the preceding claim, wherein the application of the shaped body (2) and the removal of the growth substrate (8) take place before the production of the separation structures (3) and the pixels (1). [15] Method according to one of the preceding claims, wherein the shaped body (2) is applied by a casting process.

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