OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE

Abstract

comprising an optoelectronic semiconductor device (10): - a support (11) comprising at least two electrically conductive components (12) connected by an electrically insulating material (13), - an optoelectronic semiconductor chip (14) attached to the carrier (11) on a top surface (15) of the carrier (11) and configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor device (10), - a lens with total internal reflection (16), and - a housing (17) that laterally surrounds the lens with total internal reflection (16), wherein - the electrically insulating material (13) does not extend beyond the electrically conductive components (12) on the top (15) of the support (11), - the housing (17) and the lens with total internal reflection (16) are arranged on a radiation exit side (18) of the optoelectronic semiconductor chip (14), and - the lens with total internal reflection (16) does not project beyond the housing (17) on an upper side (19) of the optoelectronic semiconductor device (10), the upper side (19) facing away from the support (11), - the lens has a recess (34) in the form of a cylinder, wherein the optoelectronic semiconductor chip (14) is arranged in the recess such that the lens with total internal reflection (16) and the optoelectronic semiconductor chip (14) are spaced apart from each other, and wherein the lens with total internal reflection (16) projects into the recess (34).

Description

[0001] An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are provided.

[0002] One task is to provide an optoelectronic semiconductor device with improved optical properties. Another task is to provide a method for manufacturing an optoelectronic semiconductor device with improved optical properties.

[0003] The invention is defined by the claims.

[0004] The following publications represent the relevant state of the art: US 2017 / 0288108A1; CHEN, Jin-Jia; LIN, Chin-Tang: Freeform surface design for a light-emitting diode–based collimating lens. In: Optical Engineering, 2010, Vol. 49, No. 9, pp. 93001-93001-8; US 2010 / 0207140A1; WO 2014 / 139797A1; US ​​9269697B2 and US 2016 / 0211421A1.

[0005] In at least one embodiment of the optoelectronic semiconductor device, the optoelectronic semiconductor device comprises a support comprising at least two electrically conductive components connected by an electrically insulating material. The support may have a principal plane of extension. The support extends further in the principal plane of extension than in other directions. The support is designed to mechanically support further components of the optoelectronic semiconductor device.

[0006] The electrically conductive components can be made of an electrically conductive material, such as a metal. The at least two electrically conductive components can be electrically insulated from each other by the electrically insulating material. This means that the at least two electrically conductive components are not in direct contact with each other. The electrically insulating material can be an epoxy resin.

[0007] In at least one embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip attached to the carrier at a top surface of the carrier and configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor device. The optoelectronic semiconductor chip can be, for example, a light-emitting diode or a laser. The semiconductor chip can be configured to emit electromagnetic radiation within a specific wavelength range during operation of the optoelectronic semiconductor device. For example, the optoelectronic semiconductor chip can emit light or electromagnetic radiation in the visible range.

[0008] Preferably, the electromagnetic radiation generated by the optoelectronic semiconductor chip exits the optoelectronic semiconductor chip at a radiation-emitting side, wherein the radiation-emitting side of the optoelectronic semiconductor chip faces away from the substrate. The optoelectronic semiconductor chip can be in direct contact with the substrate. The optoelectronic semiconductor chip can be electrically contacted by a bond wire. That is, the optoelectronic semiconductor chip can be electrically contacted at its radiation-emitting side by a bond wire connected to the substrate.

[0009] In at least one embodiment, the optoelectronic semiconductor device comprises a lens with total internal reflection. The lens with total internal reflection can be configured to shape the electromagnetic radiation emitted during operation by the optoelectronic semiconductor chip by total internal reflection. The lens with total internal reflection can comprise a material having a refractive index greater than 1, and in particular greater than the refractive index of a surrounding material such as air.

[0010] Furthermore, the lens with total internal reflection can comprise a material that is at least partially transparent to the electromagnetic radiation emitted by the optoelectronic semiconductor chip. The electromagnetic radiation emitted by the optoelectronic semiconductor chip can be shaped by the lens with total internal reflection in such a way that the optoelectronic semiconductor device is configured to emit electromagnetic radiation predominantly in one direction during operation. That is, the aperture angle of the electromagnetic radiation emitted by the optoelectronic semiconductor device during operation can be, for example, less than 40°. Thus, the optoelectronic semiconductor device can be configured to emit electromagnetic radiation during operation predominantly in a vertical direction that is perpendicular to the principal plane of the substrate's extent.Since electromagnetic radiation emitted by the optoelectronic semiconductor chip can be shaped by the lens with total internal reflection in such a way that the optoelectronic semiconductor device is configured to emit electromagnetic radiation mainly in one direction during operation, the lens with total internal reflection can be configured to provide the optical function of a reflector.

[0011] In at least one embodiment, the optoelectronic semiconductor device comprises a housing that laterally surrounds the lens with total internal reflection. The housing may have a recess in which the lens with total internal reflection is arranged. The fact that the housing laterally surrounds the lens with total internal reflection can mean that the housing completely surrounds the lens with total internal reflection, for example, in lateral directions parallel to the principal plane of extension of the substrate. The housing can act as a frame that surrounds the lens with total internal reflection in lateral directions. Thus, the lens with total internal reflection can be arranged within the housing. The housing can have side surfaces that extend in the vertical direction or are inclined with respect to the vertical direction. The side surfaces of the housing can be outer surfaces of the optoelectronic semiconductor device.

[0012] The housing can be positioned and attached to the support. The housing can be positioned and attached to the top of the support. For example, the housing can be glued to the support. This means that an adhesive or bonding agent can be applied between the housing and the support.

[0013] In at least one embodiment, the electrically insulating material does not project beyond the electrically conductive components on the top surface of the support. This can mean that the electrically insulating material does not extend further in the vertical direction than the electrically conductive components. It is possible that the electrically insulating material and the electrically conductive components are flush with the top surface of the support. It is also possible that the electrically conductive components extend further in the vertical direction on the top surface of the support than the electrically insulating material. This means that the electrically conductive components can project beyond the electrically insulating material on the top surface. The electrically insulating material can also be arranged alongside the electrically conductive components in a lateral direction.The electrically insulating material can extend from the underside of the support, facing away from the top, to the top of the support. Furthermore, the electrically conductive components can extend from the underside of the support to the top of the support.

[0014] The optoelectronic semiconductor chip can be placed on one of the electrically conductive components. This means that the optoelectronic semiconductor chip can be in direct contact with one of the electrically conductive components. The bond wire can electrically connect the optoelectronic semiconductor chip to the other electrically conductive component on which the optoelectronic semiconductor chip is not placed.

[0015] In at least one embodiment, the housing and the lens with total internal reflection are arranged on a radiation-emitting side of the optoelectronic semiconductor chip. The radiation-emitting side of the optoelectronic semiconductor chip can be the side of the optoelectronic semiconductor chip where electromagnetic radiation is emitted during operation of the optoelectronic semiconductor device. For example, the radiation-emitting side of the optoelectronic semiconductor chip can be located on the side of the optoelectronic semiconductor chip facing away from the substrate.

[0016] The housing and the lens with total internal reflection can be arranged such that the optoelectronic semiconductor chip is completely covered by the housing and the lens. The lens with total internal reflection can also surround the optoelectronic semiconductor chip laterally. Furthermore, the housing can surround the optoelectronic semiconductor chip laterally. In this way, the optoelectronic semiconductor chip and the bond wire are protected by the housing.

[0017] The lens with total internal reflection can be located at a distance from the optoelectronic semiconductor chip, so that the lens and the chip are not in direct contact. During operation, electromagnetic radiation emitted by the chip can enter the lens with total internal reflection from a medium, such as air, that has a refractive index lower than that of the lens. Furthermore, the lens can be at least partially surrounded by a material with a lateral refractive index lower than that of the lens.Therefore, electromagnetic radiation striking an interface between the lens with total internal reflection and a medium with a lower refractive index, such as air, at a range of angles, is reflected within the lens with total internal reflection towards the upper side of the optoelectronic semiconductor device, with the upper side facing away from the substrate. Therefore, no reflective materials are required to reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip towards the upper side of the optoelectronic semiconductor device.

[0018] In at least one embodiment, the lens with total internal reflection does not project beyond the housing on an upper side of the optoelectronic semiconductor device, with the upper side facing away from the substrate. This can mean that the lens with total internal reflection does not extend further in the vertical direction than the housing. The housing can extend further in the vertical direction than the lens with total internal reflection. This means that the housing can project beyond the lens with total internal reflection on the upper side of the optoelectronic semiconductor device. It is also possible that the housing and the lens with total internal reflection have the same vertical extent. This means that the housing and the lens with total internal reflection can be flush with the upper side of the optoelectronic semiconductor device.The upper side of the optoelectronic semiconductor device can be a radiation exit side of the optoelectronic semiconductor device.

[0019] In at least one embodiment, the optoelectronic semiconductor device comprises a carrier comprising at least two electrically conductive components connected by an electrically insulating material, an optoelectronic semiconductor chip attached to the carrier at a top surface of the carrier and configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor device, a lens with total internal reflection, and a housing that laterally surrounds the lens with total internal reflection.The electrically insulating material does not protrude beyond the electrically conductive components on the top of the substrate, the housing and the lens with total internal reflection are arranged on a radiation exit side of the optoelectronic semiconductor chip, and the lens does not protrude beyond the housing on the top side of the optoelectronic semiconductor device, with the top side facing away from the substrate.

[0020] For common optoelectronic semiconductor devices, a reflector is mounted on the device's substrate. The reflector comprises reflective sidewalls, which may be coated with a metal layer. The device's optoelectronic semiconductor chip can be positioned in a recess of the reflector. A lens can be mounted on top of the reflector, for example, by adhesive. Due to its exposed position, the lens is susceptible to shear forces that can occur during production or assembly steps. Furthermore, the surface area for bonding is limited, resulting in weak adhesion between the lens and the reflector. Consequently, shear forces can lead to misalignment or detachment of the lens.

[0021] In the optoelectronic semiconductor device described herein, the housing laterally surrounds the lens with total internal reflection. This means that the lens with total internal reflection is located within the housing. Therefore, the lens with total internal reflection is better protected from shear forces. Since the lens with total internal reflection does not protrude beyond the housing, it is protected from shear forces exerted by the housing in lateral directions. Furthermore, the adhesion between the lens with total internal reflection and the housing is improved. Misalignment or detachment of the lens with total internal reflection is prevented because the lens with total internal reflection is laterally surrounded by the housing. In addition, the stability of the entire optoelectronic semiconductor device is increased by arranging the lens with total internal reflection within the housing.

[0022] Furthermore, the alignment of the lens with total internal reflection with respect to the optoelectronic semiconductor chip can be improved, as only one alignment step is required in the production process: positioning the housing containing the lens with total internal reflection on the substrate. With an increased number of alignment steps, the probability of misalignment can rise. Consequently, since only one alignment step is needed, the optical stability of the electromagnetic radiation emitted by the optoelectronic semiconductor device during operation is improved. This means that the optical properties of the optoelectronic semiconductor device are enhanced.

[0023] In addition, the support used for the optoelectronic semiconductor device described herein has a low thermal resistance, so that heat can be effectively transferred from the optoelectronic semiconductor chip to the underside of the support.

[0024] Advantageously, the optoelectronic semiconductor device described herein does not require a reflective layer, such as one comprising a metal, to reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip towards the top of the device. Instead of using a reflective layer, the lens with total internal reflection is arranged within the housing.

[0025] In at least one embodiment, the lens with total internal reflection is monolithically integrated with the housing. This can mean that the lens with total internal reflection forms an integral part of the housing. The lens with total internal reflection and the housing can be integrally connected. It is also possible that the lens with total internal reflection and the housing are connected in such a way that they cannot be separated without destroying at least one of them. The lens with total internal reflection and the housing can be bonded by an adhesive. Advantageously, since the lens with total internal reflection is monolithically integrated with the housing, the alignment of the lens with respect to the optoelectronic semiconductor chip is simplified.The lens with total internal reflection is located within the housing and protected by it, therefore only one alignment step is required: when the housing is positioned on the substrate. The fewer alignment steps required, the fewer errors can occur during alignment. Once the lens with total internal reflection and the optoelectronic semiconductor chip are aligned, the optical properties of the optoelectronic semiconductor device are improved.

[0026] In at least one embodiment, electromagnetic radiation emitted from the optoelectronic semiconductor chip exits the optoelectronic semiconductor device only at the top. Electromagnetic radiation emitted from the optoelectronic semiconductor chip in the direction of the top of the optoelectronic semiconductor device can pass through the lens with total internal reflection and exit the optoelectronic semiconductor device at the top. Electromagnetic radiation emitted from the optoelectronic semiconductor chip in directions other than vertical can be reflected by the lens with total internal reflection in the direction of the top. The side walls of the housing and the support can be at least partially opaque. Consequently, electromagnetic radiation emitted from the optoelectronic semiconductor chip exits the optoelectronic semiconductor device only at the top.For many applications, it is desirable that the electromagnetic radiation emitted by an optoelectronic semiconductor device exits the device only from one side. Since the electromagnetic radiation emitted by the optoelectronic semiconductor chip exits the device only from the top, the opening angle of the emitted electromagnetic radiation can be small.

[0027] In at least one embodiment, the lens with total internal reflection comprises outer surfaces that are at least partially inclined with respect to the principal plane of the support's extent. This means that the outer surfaces are not parallel to the principal plane of the support's extent at least in certain locations. It is also possible that the outer surfaces are not parallel to the vertical direction at least in certain locations. The outer surfaces can be inclined such that a cross-section of the lens with total internal reflection extends from the support to the top surface, the cross-section lying in a plane parallel to the principal plane of the support's extent. Advantageously, in this way, electromagnetic radiation emitted by the optoelectronic semiconductor chip during operation can be shaped by total internal reflection when it passes through the lens with total internal reflection.

[0028] In at least one embodiment, at least part of the radiation-emitting surface of the lens with total internal reflection is spherical, aspherical, or elliptical. By using a radiation-emitting surface that is not flat but at least partially spherical, aspherical, or elliptical, the electromagnetic radiation exiting the optoelectronic semiconductor device can be directed further. In this case, the housing can protrude beyond the lens with total internal reflection to protect it.

[0029] In at least one embodiment, the carrier comprises a conductor frame. The two electrically conductive components of the carrier can form the conductor frame. The conductor frame can be made of copper. The carrier can, for example, have a quad-flat, no-leads package. The carrier comprising the conductor frame can be very thin and inexpensive.

[0030] In at least one embodiment, a side surface of the housing is flush with a side surface of the support. The side surfaces of the support can extend vertically. The housing can be arranged on the support such that, at least for one side surface of the housing, the housing is flush with a side surface of the support and the housing does not project beyond the support in at least one lateral direction. It is also possible for each side surface of the housing to be flush with a corresponding side surface of the support. This means that the housing is aligned with the support. For subsequent process steps or for assembly, it is advantageous if the side surfaces of the housing are flush with the respective side surface of the support.

[0031] In at least one embodiment, the housing is attached to the substrate by an adhesive. The adhesive can be arranged vertically between the housing and the substrate. The adhesive can be arranged on the top surface of the substrate along at least one side surface. It is also possible for the adhesive to be arranged on the top surface of the substrate along each side surface. The adhesive can be arranged in the form of a frame that completely surrounds the optoelectronic semiconductor chip laterally. This allows for a particularly large adhesive area, promoting a strong mechanical bond between the substrate and the housing. Advantageously, only one step is required to align the lens with total internal reflection with the optoelectronic semiconductor chip, since the housing with the lens with total internal reflection is bonded to the substrate.

[0032] In at least one embodiment, the lens with total internal reflection comprises or consists of an epoxy resin. The epoxy resin can be transparent to the electromagnetic radiation emitted during operation by the optoelectronic semiconductor chip. Furthermore, the refractive index of the epoxy resin can be higher than that of air. Consequently, the lens with total internal reflection is configured to shape the electromagnetic radiation emitted during operation by the optoelectronic semiconductor chip through total internal reflection.

[0033] In at least one embodiment, the lens with total internal reflection comprises or consists of a plastic material. The plastic material can be transparent to the electromagnetic radiation emitted during operation by the optoelectronic semiconductor chip. Furthermore, the refractive index of the plastic material can be higher than that of air. Consequently, the lens with total internal reflection is configured to shape the electromagnetic radiation emitted during operation by the optoelectronic semiconductor chip by total internal reflection.

[0034] In at least one embodiment, the opening angle of a beam of electromagnetic radiation emitted during operation by the optoelectronic semiconductor device is less than 30°. The opening angle refers to the opening angle of the electromagnetic radiation exiting the optoelectronic semiconductor device at its top. Thus, the optoelectronic semiconductor device can be used for applications requiring a small opening angle of the emitted electromagnetic radiation, such as iris recognition. A similar optoelectronic semiconductor device suitable for iris recognition is described, for example, in German patent application DE 102017130779.6, which is hereby incorporated into the disclosure by reference.

[0035] In at least one embodiment, the lens with total internal reflection is arranged at a distance from the optoelectronic semiconductor chip. The lens with total internal reflection can be spaced from the optoelectronic semiconductor chip in such a way that it is not in direct contact with the chip. For example, the lens with total internal reflection can have a recess in which the optoelectronic semiconductor chip is located. In this way, electromagnetic radiation emitted by the optoelectronic semiconductor chip during operation can enter the lens with total internal reflection from a medium with a refractive index lower than that of the lens.Therefore, at least some of the electromagnetic radiation will not be reflected at a surface of the lens with total internal reflection that faces the optoelectronic semiconductor chip, but can enter the lens with total internal reflection.

[0036] Furthermore, a method for manufacturing an optoelectronic semiconductor device is disclosed. Using the described methods, an optoelectronic semiconductor device as described above can be manufactured. This means that all features disclosed for the optoelectronic semiconductor device are also disclosed for the method for manufacturing an optoelectronic semiconductor device, and vice versa.

[0037] According to at least one embodiment of the method for manufacturing the optoelectronic semiconductor device, the housing is bonded to the substrate. The adhesive can be arranged between the housing and the substrate in the vertical direction. The adhesive can be arranged on the top surface of the substrate along at least one side surface of the substrate. It is also possible for the adhesive to be arranged on the top surface of the substrate along each side surface of the substrate. The adhesive can be arranged in the form of a frame that laterally surrounds the optoelectronic semiconductor chip. The total internal reflection lens can be positioned inside the housing before the housing is bonded to the substrate. Therefore, the method for manufacturing the optoelectronic semiconductor device allows for simplified alignment of the total internal reflection lens with respect to the optoelectronic semiconductor chip.

[0038] According to at least one embodiment of the method for manufacturing the optoelectronic semiconductor device, the housing and the substrate are joined in a single process step. This means that only one process step is required to connect the housing to the substrate. Since the lens with total internal reflection is located inside the housing, no positioning of the lens with total internal reflection is necessary after the housing is joined to the substrate. Since, advantageously, only one process step is required to join the housing and the substrate, the probability of misalignment of the lens with respect to the optoelectronic semiconductor chip is reduced.

[0039] The following description of figures may further illustrate and explain exemplary embodiments. Components that are functionally identical or have an identical effect are designated by identical reference numerals. Identical or effectively identical components may only be described with reference to the figures in which they first appear. Their description is not necessarily repeated in subsequent figures. Fig. Figure 1 shows an exploded view of an optoelectronic semiconductor device. In Fig. 2 and Fig. Figure 3 shows an optoelectronic semiconductor device. Fig. Figure 4 shows an exploded view of an exemplary embodiment of the optoelectronic semiconductor device. With Fig. 5A, Fig. 5B, Fig. 5C, Fig. 6A and Fig. Section 6B describes another exemplary embodiment of the optoelectronic semiconductor device. In Fig. Figure 7 shows the simulated intensity of radiation emitted by an exemplary embodiment of the optoelectronic semiconductor device. In Fig. 8A, Fig. 8B and Fig. Figure 9 shows an exemplary embodiment of the carrier with the optoelectronic semiconductor chip.

[0040] In Fig. Figure 1 shows an exploded view of an optoelectronic semiconductor device 10, which is not an embodiment of the optoelectronic semiconductor device 10 described herein. The optoelectronic semiconductor device 10 comprises a carrier 11. An optoelectronic semiconductor chip 14 is arranged on the carrier 11 and electrically contacted via a bond wire 32. An electrostatic discharge chip 29 is arranged adjacent to the optoelectronic semiconductor chip 14. Furthermore, a reflector 24 is arranged on the carrier 11. The reflector 24 includes a recess in which the optoelectronic semiconductor chip 14 is arranged. The reflector 24 also includes inclined inner walls that surround the optoelectronic semiconductor chip 14. The inner walls are coated with a reflective film, for example, a metal layer. A lens 25 is arranged on top of the reflector 24.

[0041] In Fig. Figure 2 is a sectional drawing of the optoelectronic semiconductor device 10. Fig. Figure 1 shows the substrate 11 as a printed circuit board (PCB) comprising electrically conductive components 12 and an electrically insulating material 13 positioned between the conductive components 12. The conductive components 12 protrude beyond the insulating material 13. A high thermal resistance of the PCB may necessitate additional components for cooling the optoelectronic semiconductor chip 14. These additional cooling components may result in an uneven surface on the substrate 11, where the optoelectronic semiconductor chip 14 is mounted, reducing the adhesion between the optoelectronic semiconductor chip 14 and the substrate 11.

[0042] Two alignment steps are required to assemble the optoelectronic semiconductor device 10. First, the reflector 24 is attached to the carrier 11. Second, the lens 25 is glued to the reflector 24. The lens 25 is positioned on top of the reflector 24 without any mechanical positioning function. Furthermore, the area where the adhesive can be applied between the lens 25 and the reflector 24 is limited. Therefore, the adhesion between the lens 25 and the reflector 24 may be weak, and the lens 25 may be subject to shear forces due to its position on top of the reflector 24. Another problem is that the adhesive between the lens 25 and the reflector 24 tends to smear onto the side surfaces 22 of the reflector 24 and the lens 25. The adhesive on the side surfaces 22 increases the cross-section of the optoelectronic semiconductor device 10, which can cause problems during subsequent process steps.

[0043] In Fig. 3 is a top view of the in Fig. 2 shows an optoelectronic semiconductor device 10. The lens 25 completely covers the reflector 24.

[0044] In Fig. Figure 4 shows an exploded view of an exemplary embodiment of an optoelectronic semiconductor device 10 described herein. The optoelectronic semiconductor device 10 comprises a carrier 11. The carrier 11 includes two electrically conductive components 12, which are connected by an electrically insulating material 13. The two electrically conductive components 12 are electrically insulated from each other by the electrically insulating material 13. The electrically conductive components 12 can form a conductor frame. The electrically insulating material 13 forms a frame that surrounds the two electrically conductive components 12 on all sides in lateral directions x, the lateral directions x being parallel to the principal plane of the extent of the carrier 11. In addition, the electrically insulating material 13 does not project beyond the electrically conductive components 12 on a top surface 15 of the carrier 11.The electrically insulating material 13 is flush with the electrically conductive components 12 on the top surface 15 of the carrier 11.

[0045] The optoelectronic semiconductor device 10 further comprises an optoelectronic semiconductor chip 14. The optoelectronic semiconductor chip 14 is attached to the carrier 11 at the top 15 of the carrier 11. The optoelectronic semiconductor chip 14 is configured to emit electromagnetic radiation when the optoelectronic semiconductor device 10 is in operation. The optoelectronic semiconductor chip 14 is arranged on one of the electrically conductive components 12. The optoelectronic semiconductor chip 14 is electrically connected to the other electrically conductive component 12 via a bond wire 32. Furthermore, the optoelectronic semiconductor chip 14 is arranged in the center of the carrier 11 and does not completely cover the carrier 11.

[0046] The optoelectronic semiconductor device 10 further comprises a lens with total internal reflection 16 and a housing 17 that laterally surrounds the lens with total internal reflection 16. The housing 17 is arranged on the top surface 15 of the carrier 11. The housing 17 and the lens with total internal reflection 16 are arranged at a radiation-exit side 18 of the optoelectronic semiconductor chip 14. The housing 17 includes a recess in which the lens with total internal reflection 16 is arranged. The recess extends from the side of the housing 17 on which the carrier 11 is arranged to an upper side 19 of the optoelectronic semiconductor device 10 that faces away from the carrier 11. The lens with total internal reflection 16, arranged in the recess, also extends from the top 15 of the carrier 11 to the upper side 19. The housing 17 surrounds the lens with total internal reflection 16 laterally.The housing 17 comprises side walls 33 arranged around the lens with total internal reflection 16 as a frame. The side walls 33 extend at least at points in a vertical direction z that is perpendicular to the principal plane of extension of the support 11. The side walls 33 of the housing 17 are bonded to the support 11 by an adhesive. This means that the adhesive applied between the housing 17 and the support 11 has the form of a frame that completely surrounds the optoelectronic semiconductor chip 14. Therefore, the adhesive is applied over a large area, which increases the adhesion between the housing 17 and the support 11.

[0047] The side walls 33 are connected to the lens with total internal reflection 16 at points. The lens with total internal reflection 16 is connected to the housing 17 near the upper side 19 of the optoelectronic semiconductor device 10. A connection area is arranged near the upper side 19 where the lens with total internal reflection 16 is connected to the housing 17. An adhesive may be placed between the housing 17 and the lens with total internal reflection 16 in this connection area. The lens with total internal reflection 16 is attached to the housing 17 such that it is monolithically integrated with the housing 17.

[0048] At the top surface 15 of the carrier 11, the lens with total internal reflection 16 is not connected to the housing 17. At the top surface 15 of the carrier 11, the lens with total internal reflection 16 is spaced away from the housing 17. This means that a medium such as air is located between the lens with total internal reflection 16 and the housing 17 at the top surface 15.

[0049] The lens with total internal reflection 16 can be made of an epoxy resin or a plastic material. The lens with total internal reflection 16 includes a recess 34 which has the shape of a cylinder. The recess 34 of the lens with total internal reflection 16 is located on the top surface 15 of the carrier 11, and the optoelectronic semiconductor chip 14 is located in the recess 34. This means that the lens with total internal reflection 16 and the optoelectronic semiconductor chip 14 are spaced apart from each other and are not in direct contact. The lens with total internal reflection 16 further includes outer surfaces 20 which are inclined, at least partially, with respect to the principal plane of extension of the carrier 11. The outer surfaces 20 extend from the top surface 15 of the carrier 11 to the upper side 19.The outer surfaces 20 are inclined in such a way that the cross-section of the lens with total internal reflection 16 increases from the top 15 of the carrier 11 to the upper side 19. The cross-section of the lens with total internal reflection 16 is circular.

[0050] The lens with total internal reflection 16 does not protrude beyond the housing 17 on the upper side 19 of the optoelectronic semiconductor device 10. The lens with total internal reflection 16 is flush with the housing 17 on the upper side 19 of the optoelectronic semiconductor device 10.

[0051] Fig. Figure 4 shows that the housing 17 with the lens with total internal reflection 16 can be connected to the carrier 11 within a process step in which the housing 17 is glued to the carrier 11.

[0052] Since the electromagnetic radiation emitted during operation by the optoelectronic semiconductor chip 14 is shaped by the lens with total internal reflection 16, the electromagnetic radiation leaves the optoelectronic semiconductor device 10 only at the top side 19.

[0053] In Fig. Figure 5A shows an exploded view of another exemplary embodiment of the optoelectronic semiconductor device 10. One difference from the one in Fig. In the embodiment shown in Figure 4, the side walls 33 of the housing 17 have a greater thickness at the four corners of the housing 17. This increases the area on which the adhesive is applied between the carrier 11 and the housing 17, thereby improving the adhesion between the carrier 11 and the housing 17. Furthermore, the lens with total internal reflection 16 includes an additional recess 35 in which the bonding wire 32 is arranged.

[0054] In Fig. Figure 5B is a sectional drawing of the embodiment of the optoelectronic semiconductor device 10 of Fig. Figure 5A shows the following. The side surfaces 22 of the housing 17 are flush with the side surfaces 22 of the support 11. Furthermore, the lens with total internal reflection 16 is not in direct contact with the support 11. This means that the lens with total internal reflection 16 is only attached to the housing 17. The recess 34 of the lens with total internal reflection 16 includes a top surface 15, from which the lens with total internal reflection 16 projects into the recess 34. The lens with total internal reflection 16 projects into the recess 34 in the shape of a cone.

[0055] Fig. Figure 5C shows the embodiment of the optoelectronic semiconductor device 10 of Fig. 5A. The housing 17 with the lens with total internal reflection 16 is attached to the support 11.

[0056] In Fig. 6A is the embodiment of the housing 17 of Fig. Figure 5A shows the side of the carrier 11. The side walls 33 of the housing 17 surround the lens with total internal reflection 16 laterally. The lens with total internal reflection 16 encompasses the recess 34 and the further recess 35. The lens with total internal reflection 16 projects into the recess 34 in the shape of a cone.

[0057] In Fig. 6B is the embodiment of housing 17 of Fig. Figure 6A shows the upper side 19. On the upper side 19, the housing 17 is flush with the lens with total internal reflection 16.

[0058] In Fig. Figure 7 shows the simulated intensity of the electromagnetic radiation emitted by the optoelectronic semiconductor device 10 according to one embodiment. The x-axis represents the angle in degrees measured with respect to the vertical direction z. The y-axis represents the intensity in watts per steradian. The line in bold refers to the simulated intensity of electromagnetic radiation emitted by the optoelectronic semiconductor device 10, as shown in Figure 7. Fig. Figures 1 to 3 are shown. The other line relates to the simulated intensity of electromagnetic radiation emitted by an embodiment of the optoelectronic semiconductor device 10, which is shown in Fig. Figures 4 to 6b are shown. The opening angle of the emitted electromagnetic radiation is similar for both devices. The intensity of the emitted electromagnetic radiation is similar for the embodiment of the optoelectronic semiconductor device 10, which is shown in Fig. 4 to 6B are shown, larger.

[0059] In Fig. Figure 8A shows an exemplary embodiment of the carrier 11. The optoelectronic semiconductor chip 14 is arranged on the upper surface 15. The optoelectronic semiconductor chip 14 is arranged on one of the electrically conductive components 12 and is connected to the other electrically conductive component 12 via the bond wire 32.

[0060] In Fig. 8B is the exemplary embodiment of the carrier 11 of Fig. Figure 8A shows the side facing away from the top 15. The two electrically conductive components 12 and the electrically insulating material 13 extend through the entire support 11. The electrically conductive components 12 are arranged side by side and are electrically insulated from each other by the electrically insulating material 13. The electrically insulating material 13 completely surrounds the electrically conductive components 12 as a frame in lateral directions x.

[0061] In Fig. Figure 9 is a sectional drawing of the exemplary embodiment of the support 11 of Fig. 8A and Fig. 8B shown. Reference sign 10 optoelectronic semiconductor device 11 carriers 12 electrically conductive components 13 electrically insulating material 14 optoelectronic semiconductor chip 15 Top 16 Lens with total internal reflection 17 cases 18 Radiation exit side 19 top side 20 outdoor area 22 side surface 24 Reflector 25 lens 29 electrostatic discharge chip 32 Bond wire 33 Side wall 34 recess 35 more recesses x lateral direction z vertical direction

Claims

[1] comprising an optoelectronic semiconductor device (10): - a support (11) comprising at least two electrically conductive components (12) connected by an electrically insulating material (13), - an optoelectronic semiconductor chip (14) attached to the carrier (11) on a top surface (15) of the carrier (11) and configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor device (10), - a lens with total internal reflection (16), and - a housing (17) that laterally surrounds the lens with total internal reflection (16), wherein - the electrically insulating material (13) does not extend beyond the electrically conductive components (12) on the top (15) of the support (11), - the housing (17) and the lens with total internal reflection (16) are arranged on a radiation exit side (18) of the optoelectronic semiconductor chip (14), and - the lens with total internal reflection (16) does not project beyond the housing (17) on an upper side (19) of the optoelectronic semiconductor device (10), the upper side (19) facing away from the support (11), - the lens has a recess (34) in the form of a cylinder, wherein the optoelectronic semiconductor chip (14) is arranged in the recess such that the lens with total internal reflection (16) and the optoelectronic semiconductor chip (14) are spaced apart from each other, and wherein the lens with total internal reflection (16) projects into the recess (34). [2] Optoelectronic semiconductor device (10) according to the preceding claim, wherein the lens with total internal reflection (16) is monolithically integrated with the housing (17). [3] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein electromagnetic radiation emitted from the optoelectronic semiconductor chip (14) leaves the optoelectronic semiconductor device (10) only at the upper side (19). [4] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the lens with total internal reflection (16) comprises outer surfaces (20) which are inclined at least partially with respect to the principal plane of the extent of the support (11). [5] Optoelectronic semiconductor device (10) according to any of the preceding claims, wherein at least part of a radiation emission surface of the lens with total internal reflection (16) is spherical, aspherical or elliptical. [6] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the carrier (11) comprises a conductor frame. [7] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein a side surface (22) of the housing (17) is flush with a side surface (22) of the carrier (11). [8] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the housing (17) is attached to the carrier (11) with an adhesive. [9] Optoelectronic semiconductor device (10) according to any of the preceding claims, wherein the lens with total internal reflection (16) comprises an epoxy resin. [10] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the lens with total internal reflection (16) comprises a plastic material. [11] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the opening angle of a beam of the electromagnetic radiation emitted during operation by the optoelectronic semiconductor device (10) is less than 30°. [12] Method, wherein an optoelectronic semiconductor device (10) is manufactured according to one of the preceding claims, and wherein the housing (17) is glued to the support (11). [13] Method, wherein an optoelectronic semiconductor device (10) is manufactured according to one of the preceding claims, and wherein the housing (17) and the carrier (11) are joined in a process step.

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