Semiconductor component and mounting structure for semiconductor component

Abstract

Semiconductor component (A1; A2) with: a first connection (1A); a first semiconductor element (3); and a sealing resin (7) covering at least one section of both the first terminal (1A) and the first semiconductor element (3), wherein the first terminal (1A) contains a first section (101A) of the first terminal (1A) which has: a front surface (111A) of the first terminal (1A) on which the first semiconductor element (3) is mounted; a rear surface (112A) of the first terminal (1A) opposite the front surface (111A) of the first terminal (1A); and a first surface (121A) of the first terminal (1A) located between the front surface (111A) of the first terminal (1A) and the rear surface (112A) of the first terminal (1A) in a thickness direction in which the front surface (111A) of the first terminal (1A) and the rear surface (112A) of the first terminal (1A) are separated from each other, and the first surface (121A) of the first connection (1A) is covered with the sealing resin (7) and is formed with a plurality of protruding areas (131A) and a plurality of recessed areas (132A) arranged alternately in the thickness direction, wherein a radius of curvature (R1) of each of the protruding areas (131A) is smaller than a radius of curvature (R2) of each of the recessed areas (132A).

Description

TECHNICAL AREA

[0001] The present disclosure relates to a semiconductor component and a mounting structure for a semiconductor component. BACKGROUND

[0002] Patent literature 1 discloses a conventional semiconductor component. The disclosed semiconductor component comprises a terminal, a semiconductor element mounted on the terminal, and a sealing resin covering the terminal and the semiconductor element. Furthermore, patent literature 2 and 3 disclose semiconductor components comprising a semiconductor element and a sealing resin. TECHNICAL REFERENCE PATENT LITERATURE Patent document 1: JP 2011 - 243 839 A Patent document 2: US 2014 / 0284784 A1 Patent document 3: JP 2003- 332 512 A OVERVIEW OF THE INVENTION: Problems to be solved by the invention:

[0003] Generally, a semiconductor device generates heat when energy is supplied. Furthermore, during the assembly process, for example, when mounting a resin-packed semiconductor component onto a printed circuit board, stresses can occur within the semiconductor. Such heat and stresses can cause a defect, such as a crack in the sealing resin.

[0004] The present disclosure was conceived under the aforementioned circumstances. One objective of the present disclosure is to provide a semiconductor device capable of improving the reliability of a sealing resin by preventing or suppressing the occurrence of a defect, as described above, in the sealing resin. Means to solve the problems:

[0005] A semiconductor device provided by the present disclosure comprises a first terminal, a first semiconductor element, and a sealing resin covering at least a portion of both the first terminal and the first semiconductor element. The first terminal has a first portion comprising: a front surface of the first terminal on which the first semiconductor element is mounted; a rear surface of the first terminal opposite the front surface of the first terminal; and a first surface of the first terminal located between the front surface of the first terminal and the rear surface of the first terminal in a thickness direction in which the front surface of the first terminal and the rear surface of the first terminal are separated from each other.The first surface of the first connection is covered with the sealing resin and formed with a plurality of protruding areas and a plurality of recessed areas, arranged alternately in the thickness direction. The radius of curvature of each of the protruding areas is smaller than the radius of curvature of each of the recessed areas. Advantages of the invention:

[0006] According to the present disclosure, the reliability of the sealing resin can be improved.

[0007] Further features and advantages of the present disclosure will become apparent from the detailed description given below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a perspective view to describe a semiconductor component according to a first embodiment; Fig. 2 is a top view showing the semiconductor component according to the first embodiment; Fig. Figure 3 is a top view to describe the semiconductor component according to the first embodiment; Fig. Figure 4 is a front view showing the semiconductor component according to the first embodiment; Fig. Figure 5 is a side view showing the semiconductor component according to the first embodiment; Fig. Figure 6 is a cross-sectional view along line VI-VI in Fig. 3; Fig. Figure 7 is a cross-sectional view along lines VII-VII in Fig. 3; Fig. Figure 8 is a top view to describe the semiconductor component according to the first embodiment; Fig. Figure 9 is a top view to describe the semiconductor component according to the first embodiment; Fig. Figure 10 is a bottom view to describe the semiconductor component according to the first embodiment; Fig. 11 is a side view to describe the semiconductor component according to the first embodiment; Fig. 12 is a cross-sectional view along line XII-XII in Fig. 11; Fig. 13 is a cross-sectional view along line XIII-XIII in Fig. 11; Fig. Figure 14 is a top view to describe the semiconductor component according to the first embodiment; Fig. 15 is a cross-sectional view along line XV-XV in Fig. 14; Fig. Figure 16 is a cross-sectional view to describe the semiconductor component according to the first embodiment; Fig. 17 is a cross-sectional view to describe the semiconductor component according to the first embodiment; Fig. Figure 18 is a top view to describe the semiconductor component according to the first embodiment; Fig. Figure 19 is a top view to describe the semiconductor component according to the first embodiment; Fig. Figure 20 is a perspective view to describe an assembly structure according to the first embodiment; Fig. 21 is a cross-sectional view along line XXI-XXI in Fig. 20; Fig. Figure 22 is a view describing a first variation of the semiconductor component according to the first embodiment; Fig. 23 is a view describing a second variation of the semiconductor component according to the first embodiment; Fig. Figure 24 is a top view to describe the second variation of the semiconductor component according to the first embodiment; Fig. Figure 25 is a view describing a third variation of the semiconductor device according to the first embodiment; and Fig. Figure 26 is a top view to describe a semiconductor component according to a second embodiment. MODE OR FORM OF EXECUTION FOR IMPLEMENTING THE INVENTION

[0008] In the following, embodiments of the present disclosure are described with reference to the drawings.

[0009] The terms “first”, “second”, “third” and the like are used in the present disclosure merely to distinguish between objects and are not intended to establish any ordinal requirements. <Erste Ausführungsform; Halbleiterbauteil A1>

[0010] The Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15, Fig. 16, Fig. 17, Fig. 18 to Fig. Figure 19 shows a semiconductor component according to a first embodiment. A semiconductor component A1 shown in the figures has a plurality of terminals 1 and 2, a plurality of first semiconductor elements 3, a plurality of second semiconductor elements 4, a plurality of third semiconductor elements 5, a plurality of electronic components 49, a plurality of wires 91, 92 and 93, a carrier element 6 and a sealing resin 7. The application of the semiconductor component A1 is not limited in any way. For example, the semiconductor component A1 is configured as an intelligent power module (IPM) used for the drive control of an inverter motor.

[0011] Fig. Figure 1 is a perspective view to describe the semiconductor component A1. Fig. Figure 2 is a top view to describe the semiconductor component A1. Fig. Figure 3 is a top view to describe the semiconductor component A1. Fig. Figure 4 is a front view showing the semiconductor component A1. Fig. Figure 5 is a side view showing the semiconductor component A1. Fig. Figure 6 is a cross-sectional view along lines VI-VI in Fig. 3. Fig. Figure 7 is a cross-sectional view along lines VII-VII in Fig. 3. Fig. Figure 8 is a top view to describe the semiconductor component A1. Fig. Figure 9 is a top view to describe the semiconductor component A1. Fig. Figure 10 is a bottom view to describe the semiconductor component A1. Fig. Figure 11 is a side view to describe the semiconductor component A1. Fig. 12 is a cross-sectional view along line XII-XII in Fig. 11. Fig. 13 is a cross-sectional view along lines XIII-XIII in Fig. 11. Fig. Figure 14 is a top view to describe the semiconductor component A1. Fig. 15 is a cross-sectional view along line XV-XV in Fig. 14. Fig. Figure 16 is a cross-sectional view to describe the semiconductor component A1. Fig. Figure 17 is a cross-sectional view to describe the semiconductor component A1. Fig. Figure 18 is a top view to describe the semiconductor component A1. Fig. Figure 19 is a top view to describe the semiconductor component A1.

[0012] The plurality of terminals 1 and 2 carry the plurality of first semiconductor elements 3, the plurality of second semiconductor elements 4, and the plurality of third semiconductor elements 5, forming a conduction path to these semiconductor elements. Terminals 1 and 2 are conductive elements and can be formed, for example, using a leadframe. The voltage applied to the plurality of terminals 1 is higher than the voltage applied to the plurality of terminals 2, but the present disclosure is not limited to this. For example, if the semiconductor device A1 is configured as an IPM, a drive current for a motor is applied to the plurality of terminals 1 and a control current is applied to the plurality of terminals 2. Accordingly, a higher voltage is applied to the plurality of terminals 1 than to the plurality of terminals 2, and a larger current flows through the plurality of terminals 1.Therefore, the multitude of connections 1 can be referred to as "high-voltage connections" or "power connections," and the multitude of connections 2 as "low-voltage connections" or "control connections." The multitude of connections 1 and 2 can be formed, for example, by cutting and bending a sheet of metal material (e.g., copper) using a punching process.

[0013] The multiple connectors 1 include connectors 1A to 1G and 1Z. The multiple connectors 2 include connectors 2A to 2F and 2Z.

[0014] As in Fig. As shown in Figure 3, the group of terminals 1A to 1G and 1Z is separated from the group of terminals 2A to 2F and 2Z in the y-direction.

[0015] Terminals 1A to 1G and 1Z take on various forms depending on requirements, with regard to shape, position, and conductivity relationship to semiconductor elements. The individual terminals are described below, omitting descriptions of common features where necessary.

[0016] As in Fig. As shown in 1, 3, 4 and 6 to 8, terminal 1A (“first terminal”) has a first section 101A, a second section 102A, a third section 103A and a fourth section 104A.

[0017] The first section 101A has a front surface 111A, a rear surface 112A, a first surface 121A, a second surface 122A, a third surface 123A, a pair of fourth surfaces 124A, a pair of fifth surfaces 125A, a pair of sixth surfaces 126A, a pair of seventh surfaces 127A, a plurality of depressions 1111A, a plurality of recesses 1112A and a plurality of recesses 1113A.

[0018] The front surface 111A faces a first side in the z-direction and is flat except for the plurality of depressions 1111A (hereinafter, a surface that is flat overall, even if the area is formed with a plurality of depressions, is referred to as a "flat surface"). The rear surface 112A is a flat surface facing the side opposite the front surface 111A in the z-direction. The first semiconductor elements 3 and the third semiconductor elements 5 are mounted on the front surface 111A. In the illustrated example, three first semiconductor elements 3 and three third semiconductor elements 5 are mounted on the front surface 111A of the first section 101A, but the number of semiconductor elements is not limited to this example. It is also possible that the third semiconductor elements 5 are not mounted on the first section 101A.

[0019] The first surface 121A is located between the front surface 111A and the rear surface 112A in the z-direction and has a first side in the x-direction (right side in Fig. 3) as a whole opposite. The first surface 121A is connected to the front surface 111A and the rear surface 112A. As shown in the Fig. 8, Fig. 9 to Fig. As shown in Figure 10, the first surface 121A has a plurality of protruding areas 131A and a plurality of recessed or inset areas 132A. Each of the protruding areas 131A, viewed in the z-direction, has a protruding shape and projects in the x-direction (right side in Figure 10). Fig. 9) Each of the recessed areas 132A has a recessed shape when viewed in the z-direction and is relative to the preceding areas 131A (left side in Fig. 9) recessed. The multitude of protruding areas 131A and the multitude of recessed areas 132A are arranged alternately.

[0020] The shapes of the projecting areas 131A and the recessed areas are not particularly restricted. It is sufficient that the projecting areas 131A and the recessed areas 132A have projecting or recessed shapes when viewed in the z-direction, and the boundaries between these areas may not be clearly discernible. In the Fig. 9 and Fig. In the example shown, a surface resulting from the average of the depressions and protrusions of the first surface 121A serves as the reference surface (average surface) 1210A, sections protruding from the reference surface 1210A are considered the protruding areas 131A, and sections recessed from the reference surface 1210A are considered the recessed areas 132A.

[0021] In the illustrated example, each of the protruding areas 131A and each of the recessed areas 132A extends over the entire first surface 121A in the width direction (z-direction). Alternatively, each of the protruding areas 131A and / or each of the recessed areas 132A can be provided only on a portion of the first surface 121A in the z-direction. In the illustrated example, the plurality of protruding areas 131A and the plurality of recessed areas 132A extend over the entire first surface 121A in the y-direction, but the plurality of protruding areas 131A and / or the plurality of recessed areas 132A can instead be provided only on a portion of the first surface 121A in the y-direction.

[0022] In the example shown, the protruding areas 131A and the recessed areas 132A each have an arc-shaped contour when viewed in the z-direction. The radius of curvature R1 of each protruding area 131A and the radius of curvature R2 of each recessed area 132A are set accordingly. For example, the radius of curvature R1 and the radius of curvature R2 can be the same or different. In the example shown, the radius of curvature R1 is smaller than the radius of curvature R2.

[0023] As in Fig. As shown in Figure 11, the first surface 121A has a first region 1211A and a second region 1212A. The first region 1211A is a rough surface compared to the second region 1212A (i.e., the surface roughness is relatively high). The first region 1211A is located closer to the front surface 111A than the second region 1212A, although the present disclosure is not limited to this.

[0024] In the example shown, the dimension of the first region 1211A varies in the z-direction depending on its position in the y-direction. More precisely, in the first region 1211A, the maximum dimension Zm1 of a section contained in a projecting region 131A in the z-direction is larger than the minimum dimension Zm2 of a section contained in a recessed region 132A in the z-direction.

[0025] As in Fig. 10, Fig. 11, Fig. 12 to Fig. As shown in Figure 13, the rear surface 112A has a first section 1121A and a plurality of second sections 1122A. The first section 1121A contains sections that overlap with the first semiconductor elements 3 in the plan view. In the example shown, the first section 1121A is a flat surface perpendicular to the z-direction. The second sections 1122A are surrounded by the first surface 121A and a line segment Ls1 that connects the bottoms of adjacent recessed areas 132A as seen in the z-direction. As shown in Fig. 12 and Fig. As shown in Figure 13, the second sections 1122A are gently curved protruding surfaces which are inclined, for example, with increasing distance from the first section 1121A in the x-direction to the front surface 111A in the z-direction.

[0026] The second region 1212A has a plurality of projections 1212Aa, a plurality of depressions 1212Ab, a plurality of projections 1212Ac, and a plurality of depressions 1212Ad. The projections 1212Aa are sections of the boundary between the second region 1212A and the first region 1211A and project upwards in the z-direction on the first side. The depressions 1212Ab are sections of the boundary between the second region 1212A and the first region 1211A and are recessed downwards in the z-direction on a second side. The plurality of projections 1212Aa and the plurality of depressions 1212Ab are arranged alternately in the y-direction. The projections 1212Ac are sections of the boundary between the second area 1212A and the rear surface 112A and project in the z-direction (downwards) towards the second side.The depressions 1212Ad are sections of the boundary between the second region 1212A and the rear surface 112A and are recessed towards the first side in the z-direction (upwards). The plurality of projections 1212Ac and the plurality of depressions 1212Ad are arranged alternately in the y-direction. The projections 1212Aa and the projections 1212Ac are arranged adjacent to each other in the z-direction, and the depressions 1212Ab and the depressions 1212Ad are arranged adjacent to each other in the z-direction. The maximum dimension z3 between a projection 1212Aa and a projection 1212Ac that are adjacent in the z-direction is larger than the minimum dimension z4 between a depression 1212Ab and a depression 1212Ad that are adjacent in the z-direction.

[0027] The first section 101A has a first projection 141A. The first projection 141A is located between the front surface 111A and the first region 1211A of the first surface 121A and projects from the front surface 111A in the z-direction. The first projection 141A can be formed along the entire length of the boundary between the front surface 111A and the first region 1211A (first surface 121A) or only on a section of the boundary.

[0028] The configuration in which the first surface 121A has the plurality of protruding areas 131A and the plurality of recessed areas 132A can include all or only one of the first areas 1211A, the second area 1212A, the plurality of second sections 1122A, and the first protrusion 141A, or none of these areas. For example, if the terminal 1A is formed by stamping a sheet of metal material, an uneven section corresponding to the protruding areas 131A and the recessed areas 132A is formed in a stamping tool. When a section of the metal plate material, which is to be the first section 101A, is punched through the uneven section of the tool moving from the rear surface 112A to the front surface 111A in the z-direction, the first area 1211A and the second area 1212A are formed in the plurality of protruding areas 131A and the plurality of recessed areas 132A.The second area 1212A, which is relatively smooth (i.e., the surface roughness is relatively low), corresponds to a section formed by shearing with the tool. The first area 1211A, which is relatively rough, corresponds to a fractured surface of the plate material. The second sections 1122A of the rear surface 112A are sections of the rear surface 112A that are deformed towards the front surface 111A in the z-direction as a result of punching with the tool. The first projection 141A is a section of the plate material that has been stretched in the z-direction as a result of fracture of the plate material.

[0029] As in Fig. As shown in Figure 8, the second surface 122A is located opposite the first surface 121A in the x-direction and faces a second side (left side) in the x-direction. The second surface 122A is located between the front surface 111A and the rear surface 112A in the z-direction. In the example shown, the second surface 122A is connected to both the front surface 111A and the rear surface 112A. The second surface 122A is smoother than the first surface 121A.

[0030] The third surface 123A is located between the first surface 121A and the second surface 122A and faces a first side in the y-direction (in Fig. 8 upwards). The third surface 123A is located between the front surface 111A and the rear surface 112A in the z-direction. In the example shown, the third surface 123A is connected to the front surface 111A and the rear surface 112A. The third surface 123A is smoother than the first surface 121A.

[0031] The pair of fourth surfaces 124A is located opposite the third surface 123A in the y-direction and faces a second side in the y-direction (in Fig. 8 downwards). The pair of fourth surfaces 124A is separated from each other in the x-direction. The fourth surfaces 124A are located between the front surface 111A and the rear surface 112A in the z-direction. In the example shown, the fourth surfaces 124A are connected to the front surface 111A and the rear surface 112A.

[0032] The pair of fifth surfaces 125A is located between the first surface 121A and the second surface 122A in the x-direction, and on the second side in the y-direction relative to the first surface 121A and the second surface 122A. The pair of fifth surfaces 125A is connected to the first surface 121A and the second surface 122A, respectively. The fifth surfaces 125A are inclined relative to the x-direction. The fifth surfaces 125A are located between the front surface 111A and the rear surface 112A in the z-direction. In the example shown, the fifth surfaces 125A are connected to the front surface 111A and the rear surface 112A.

[0033] The pair of sixth surfaces 126A is located between the pair of fifth surfaces 125A in the x-direction and between the pair of fifth surfaces 125A and the fourth surface 124A in the y-direction. In the example shown, each of the sixth surfaces 126A is connected to one of the pair of fourth surfaces 124A and one of the pair of fifth surfaces 125A. Each of the sixth surfaces 126A points in the x-direction. The sixth surfaces 126A lie between the front surface 111A and the rear surface 112A in the z-direction. In the example shown, the sixth surfaces 126A are connected to the front surface 111A and the rear surface 112A.

[0034] The pair of seventh surfaces 127A is located between the first surface 121A and the third surface 123A in the x-direction, and between the second surface 122A and the third surface 123A in the x-direction. Furthermore, each of the seventh surfaces 127A is located between the third surface 123A and either the first surface 121A or the second surface 122A in the y-direction. The seventh surface 127A on the first side in the x-direction (right side in Fig. 8) is connected to the first surface 121A and the third surface 123A. The seventh surface 127A on the second side in the x-direction (left side) is connected to the second surface 122A and the third surface 123A. In the example shown, the seventh surfaces 127A, viewed in the z-direction, are projecting curved surfaces. The seventh surfaces 127A are located, in the z-direction, between the front surface 111A and the rear surface 112A. In the example shown, the seventh surfaces 127A are connected to the front surface 111A and the rear surface 112A.

[0035] In the example shown, the fourth surface 124A, the fifth surface 125A, and the sixth surface 126A on the first side in the x-direction (where the first surface 121A is located) are formed with a variety of protruding areas and a variety of recessed areas. These areas can be similar, for example, to the protruding areas 131A and the recessed areas 132A of the first surface 121A. The fourth surface 124A, the fifth surface 125A, and the sixth surface 126A can have areas similar to the first area 1211A and the second area 1212A of the first surface 121A. Furthermore, the fourth surface 124A, the fifth surface 125A, and the sixth surface 126A can have the first protrusion 141A as described above.The rear surface 112A can have a plurality of second sections 1122A corresponding to the protruding areas 131A and the recessed areas 132A of the fourth surface 124A, the fifth surface 125A and the sixth surface 126A.

[0036] As in Fig. As shown in Figure 8, the first section 101A has the plurality of depressions 1111A, the plurality of recesses 1112A and the plurality of recesses 1113A.

[0037] The numerous depressions 1111A are recessed from the front surface 111A in the z-direction. The shapes of the depressions 1111A, viewed in the z-direction, are not particularly limited. In the Fig. In the example shown, each of the recesses 1111A has a rectangular shape. In this example, the multiple recesses 1111A are arranged in a matrix. The multiple recesses 1111A are spaced at intervals Px1 in the x-direction. The multiple recesses 1111A are spaced at intervals Py1 in the y-direction. The lengths of the intervals Px1 and Py1 are set accordingly and can be equal or different. In this example, the intervals Px1 and Py1 are equal.

[0038] An example of the cross-sectional shape of each of the depressions 1111A is shown in Fig. Figure 16 illustrates this. In the example shown, the depression 1111A has a first surface 1111Aa and a plurality of second surfaces 1111Ab. The first surface 1111Aa is located at the deepest point in the z-direction. The first surface 1111Aa is, for example, a flat rectangular surface. The plurality of second surfaces 1111Ab are arranged between the first surface 1111Aa and the front surface 111Aa. The plurality of second surfaces 1111Ab are flat surfaces inclined relative to the z-direction. In the example shown, a third surface 1111Ac is formed around the depression 1111A. The third surface 1111Ac is raised in the z-direction relative to the front surface 111A. The third surface 1111Ac is a section that surrounds the depression 1111A and is raised during the formation of the depression 1111A.

[0039] In the Fig. In the example shown, the recesses 1112A and 1113A are annular in shape when viewed in the z-direction. The depressions 1111A are not formed in the areas that are further inward than the recesses 1112A and 1113A. Viewed in the z-direction, the recesses 1113A surround the outer surfaces of the recesses 1112A.

[0040] As in Fig. 14 and Fig. As shown in Figure 15, the recesses 1112A and 1113A are recessed in the z-direction from the front surface 111A. In the Fig. In example 17, the depth D2 of the recess 1112A is greater than the depth D3 of the recess 1113A.

[0041] As in Fig. As shown in Figure 17, the recess 1112A has a first surface 1112Aa and a pair of second surfaces 1112Ab. The first surface 1112Aa is located at the lowest point in the z-direction. The first surface 1112Aa is, for example, a flat, ribbon-like surface. The pair of second surfaces 1112Ab is located between the first surface 1112Aa and the front surface 111A. The pair of second surfaces 1112Ab are flat, ribbon-like surfaces that are inclined relative to the z-direction. In the illustrated example, a third surface 1112Ac is formed around the recess 1112A. The third surface 1112Ac is raised in the z-direction relative to the front surface 111A. The third surface 1112Ac is a section that surrounds the recess 1112A and is raised during the formation of the recess 1112A.

[0042] The recess 1113A has a pair of secondary surfaces 1113Ab. The pair of secondary surfaces 1112Ab are flat, ribbon-like surfaces inclined relative to the z-direction. In the example shown, a third surface 1113Ac is formed around the recess 1113A. The third surface 1113Ac is raised in the z-direction relative to the front surface 111A. The third surface 1113Ac is a section that surrounds the recess 1113A and is raised during the formation of the recess 1113A.

[0043] As in Fig. As shown in Figure 2, the second section 102A is a section of terminal 1A that protrudes from the sealing resin 7. The second section 102A projects in the y-direction from the side opposite terminal 2 with respect to the first section 101A. The second section 102A is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the example shown, the second section 102A is bent upwards in the z-direction (see, for example, Figure 2). Fig. 1).

[0044] As in Fig. As shown in Figure 3, the third section 103A and the fourth section 104A are inserted between the first section 101A and the second section 102A. The third section 103A and the fourth section 104A are covered with the sealing resin 7. As shown in Fig. As shown in Figure 7, the fourth section 104A is positioned upwards in the z-direction by one dimension z1 relative to the first section 101A and is connected to the second section 102A. The third section 103A is connected to the first section 101A and the fourth section 104A and is inclined relative to the y-direction. In the example shown, the third section 103A is connected to a section of the first section 101A between the pair of fourth surfaces 124A.

[0045] As in Fig. As shown in Figure 3, terminals 1B, 1C, and 1D are arranged on the second side in the x-direction (left side) relative to terminal 1A. The shapes and sizes of terminals 1B through 1D are set accordingly. In the example shown, terminals 1B, 1C, and 1D have the same shape and size. Therefore, terminal 1D will be described below.

[0046] As in the Fig. 3, Fig. 6 and Fig. As shown in Figure 18, connector 1D has a first section 101D, a second section 102D, a third section 103D and a fourth section 104D.

[0047] The first section 101D has a front surface 111D, a rear surface 112D, a first surface 121D, a second surface 122D, a third surface 123D, a fourth surface 124D, a pair of seventh surfaces 127D, an eighth surface 128D, a plurality of depressions 1111D, a plurality of recesses 1112D and a plurality of recesses 1113D.

[0048] The front surface 111D faces the first side in the z-direction and is flat overall. The rear surface 112D is a flat surface facing the side opposite the front surface 111D. The first semiconductor element 3 and the third semiconductor element 5 are mounted on the front surface 111D. In the example shown, a first semiconductor element 3 and a third semiconductor element are mounted on the front surface 111D of the first section 101D, but the present disclosure is not limited to this. The third semiconductor element 5 can also be mounted on the first section 101D.

[0049] The first surface 121D is located between the front surface 111D and the rear surface 112D in the z-direction, and faces the first side in the x-direction (right side in Fig. 3) In the example shown, the first surface 121D is connected to the front surface 111D and the rear surface 112D.

[0050] The second surface 122D is located opposite the first surface 121D in the x-direction. The second surface 122D is located between the front surface 111D and the rear surface 112D in the z-direction and is connected to both the front surface 111D and the rear surface 112D.

[0051] The third surface 123D is located in the x-direction between the first surface 121D and the second surface 122D and faces the first side in the y-direction (in Fig. 18 upwards). The third surface 123D is located in the z-direction between the front surface 111D and the rear surface 112D and is connected to the front surface 111D and the rear surface 112D.

[0052] The fourth surface 124D is located opposite the third surface 123D in the y-direction and faces the second side in the y-direction (in Fig. 18 downwards). The fourth surface 124D is located in the z-direction between the front surface 111D and the rear surface 112D and is connected to the front surface 111D and the rear surface 112D.

[0053] The pair of seventh surfaces 127D is located between the first surface 121D and the third surface 123D, and between the second surface 122D and the third surface 123D, in the x-direction, and is also located between the first and second surfaces 121D, 122D, and the third surface 123D, respectively. The seventh surface 127D on the first side in the x-direction is connected to the first surface 121D and the third surface 123D, and the seventh surface 127D on the second side in the x-direction is connected to the second surface 122D and the third surface 123D. Viewed in the z-direction, the seventh surfaces 127D are curved surfaces projecting from the surface. The seventh surfaces 127D are located in the z-direction between the front surface 111D and the rear surface 112D and are connected to the front surface 111D and the rear surface 112D.

[0054] The eighth surface 128D lies between the second surface 122D and the fourth surface 124D and is connected to both surfaces. Viewed in the z-direction, the eighth surface 128D is a projecting curved surface. The eighth surface 128D is located in the z-direction between the front surface 111D and the rear surface 112D and is connected to both surfaces.

[0055] The first section 101D is not formed with areas corresponding to the preceding sections 131A and the recessed sections 132A of the first section 101A.

[0056] The first section 101D has the plurality of depressions 1111D, the plurality of recesses 1112D and the plurality of recesses 1113D.

[0057] The multitude of depressions 1111D is set back from the front surface 111D in the z-direction. The shapes of the depressions 1111D, as seen in the z-direction, are not particularly restricted. For example, each of the depressions 1111D can have a rectangular shape similar to the depressions 1111A. The multitude of depressions 1111D can be arranged in a matrix. Like the multitude of depressions 1111A, the depressions 1111D are also arranged at a distance Px1 in the x-direction. The multitude of depressions 1111D is arranged at a distance Py1 in the y-direction.

[0058] The cross-sectional shapes of the recesses 1111D are not particularly limited. For example, the recesses 1111D have similar cross-sectional shapes to the recesses 1111A.

[0059] The recesses 1112D and 1113D are annular in shape when viewed in the z-direction. The indentations 1111D are not formed in the area that lies further inward than the recesses 1112D and 1113D. Viewed in the z-direction, the recesses 1113D surround the outer surfaces of the recesses 1112D.

[0060] The recesses 1112D and 1113D are recessed from the front surface 111D in the z-direction. As with the recesses 1112A and 1113A, the depth D2 of each recess 1112D is greater than the depth D3 of each recess 1113D.

[0061] The recesses 1112D and 1113D have similar cross-sectional shapes to the recesses 1112A and 1113A.

[0062] The second section 102D is a section of terminal 1D that protrudes from the sealing resin 7. The second section 102D projects in the y-direction on the side opposite terminals 2, relative to the first section 01D. The second section 102D is used, for example, to electrically connect the semiconductor component A1 to an external circuit. The second section 102D is bent upwards in the z-direction.

[0063] The third section 103D and the fourth section 104D are inserted between the first section 101D and the second section 102D. The third section 103D and the fourth section 104D are covered with the sealing resin 7. Like the fourth section 104A, the fourth section 104D is offset upwards in the z-direction by dimension z1 relative to the first section 101D and is connected to the second section 102D. The third section 103D is connected to the first section 101D and the fourth section 104D and is inclined relative to the y-direction. The third section 103D is connected to a section of the first section 101D near the fourth surface 124D.

[0064] As in the Fig. 3 and Fig. As shown in Figure 18, terminal 1E is located on the second side in the x-direction (left side) relative to terminal 1D. Terminal 1E has a second section 102E and a fourth section 104E. Terminal 1E does not have a section on which a semiconductor element is mounted.

[0065] The second section 102E is a section of terminal 1E that protrudes from the sealing resin 7. The second section 102E projects in the y-direction on the side opposite terminal 2 with respect to the fourth section 104E. The second section 102E is used, for example, to electrically connect the semiconductor device A1 to an external circuit. The second section 102E is bent upwards in the z-direction.

[0066] The fourth section 104E is covered with the sealing resin 7 and can have a rectangular shape when viewed in the z-direction. As with the fourth section 104D, the fourth section 104E is offset upwards in the z-direction by dimension z1 relative to the first section 101D and is connected to the second section 102E.

[0067] As in Fig. 3 and Fig. As shown in Figure 18, terminal 1F is located on the second side in the x-direction (left side) relative to terminal 1E. Terminal 1F has a second section 102F and a fourth section 104F. Terminal 1F does not have a section on which a semiconductor element is mounted.

[0068] The second section 102F is a section of terminal 1F that protrudes from the sealing resin 7. The second section 102F projects forward or outward in the y-direction on the side opposite terminals 2, relative to the fourth section 104F. The second section 102F is used, for example, to electrically connect the semiconductor component A1 to an external circuit. The second section 102F is bent upwards in the z-direction.

[0069] The fourth section 104F is covered with the sealing resin 7 and can have a rectangular shape when viewed in the z-direction. As with the fourth section 104E, the fourth section 104F is offset upwards in the z-direction by dimension z1 relative to the first section 101D and is connected to the second section 102F.

[0070] As in Fig. 3 and Fig. As shown in Figure 18, terminal 1G is located on the second side in the x-direction (left side) relative to terminal 1F. Terminal 1G has a second section 102G and a fourth section 104G. Terminal 1G does not have a section on which a semiconductor element is mounted.

[0071] The second section 102G is a section of terminal 1G that protrudes from the sealing resin 7. The second section 102G projects in the y-direction on the side opposite terminals 2, relative to the fourth section 104G. The second section 102G is used, for example, to electrically connect the semiconductor device A1 to an external circuit. The second section 102G is bent upwards in the z-direction.

[0072] The fourth section 104G is covered with the sealing resin 7 and can have a rectangular shape when viewed in the z-direction. Like the fourth section 104F, the fourth section 104G is offset upwards in the z-direction by dimension z1 relative to the first section 101D and is connected to the second section 102G.

[0073] As in Fig. As shown in Figure 3, terminal 1Z is located on the first side in the x-direction (right side) relative to terminal 1A. Terminal 1Z is not electrically connected to the first semiconductor elements 3, the second semiconductor elements 4, or the third semiconductor elements 5. Terminal 1Z has a second section 102Z and a fourth section 104Z.

[0074] The second section 102Z is ​​a section of connection 1Z that protrudes from the sealing resin 7. The second section 102Z protrudes in the y-direction on the side opposite connections 2 with respect to the fourth section 104Z. The second section 102Z is ​​bent upwards in the z-direction.

[0075] The fourth section 104Z is covered with the sealing resin 7 and can have a rectangular shape when viewed in the z-direction. Like the fourth section 104A, the fourth section 104Z is offset upwards in the z-direction by dimension z1 relative to the first section 101A and is connected to the second section 102Z.

[0076] As in Fig. As shown in Figure 3, the terminals 2A, 2B, 2C, 2D, 2E, 2F, and 2Z assume different forms depending on requirements, with respect to shape, position, and conductivity relationship to semiconductor elements or electronic components. The individual terminals are described below, omitting descriptions of common features where necessary.

[0077] For example, in Fig. As shown in Figure 3, terminal 2A (“second terminal”) has a plurality of first sections 201A, a plurality of second sections 202A, a plurality of fourth sections 204A, a fifth section 205A, a sixth section 206A, a seventh section 207A and an eighth section 208A.

[0078] As in Fig. As shown in Figure 7, each of the first sections 201A has a front surface 211A and a rear surface 212A. The front surface 211A is a flat surface facing the first side in the z-direction. The rear surface 212A is a flat surface facing the side opposite the front surface 211A in the z-direction. The second semiconductor elements 4 are mounted on the front surfaces 211A. In the illustrated example, there are two first sections 201A, and a second semiconductor element 4 is mounted on the front surface 211A of each of the first sections 201A. However, the present disclosure is not limited to this.

[0079] The first two sections 201A are arranged side by side in the x-direction. The first section 201A on the first page in the x-direction (right in Fig. 3) The third surface 123A of the first section 101A of terminal 1A is opposite the first section 201A on the second side (left side). The third surface 123C of the first section 101C of terminal 1C is opposite the first section 201A on the second side (left side). The shapes of the first sections 201A are not particularly restricted. In the illustrated example, each of the first sections 201A has a rectangular shape when viewed in the z-direction, more precisely a rectangular shape that is extended in the x-direction.

[0080] As in Fig. As shown in Figure 7, the first sections 201A are offset upwards in the z-direction by one dimension z2 relative to the first section 101A of terminal 1A. Dimension z2 can be the same as or different from dimension z1. In the example shown, dimension z1 is equal to dimension z2.

[0081] In the Fig. In the example shown, there are two second sections 202A, and each of the second sections 202A is a section of terminal 2A that protrudes from the sealing resin 7. The second sections 202A protrude or extend in the y-direction on the side opposite terminals 1 with respect to the first sections 201A. The second sections 202A are used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second sections 202A are bent upwards in the z-direction. Two second sections 202A are spaced apart from each other in the x-direction.

[0082] In the Fig. In the example shown, there are two fourth sections 204A, and each of the fourth sections 204A is inserted between one of the first sections 201A (in the illustrated example, the first section 201A on the left) and a corresponding second section 202A. The two fourth sections 204A are covered with the sealing resin 7. The positions of the fourth sections 204A in the z-direction are the same as those of the first sections 201A. The fourth section 204A on the right has a ribbon-like shape that extends in the y-direction. The fourth section 204A on the left extends at an inclination relative to the x-direction.

[0083] The fifth section 205A is inserted between and connected to the first two sections 201A. In the illustrated example, the fifth section 205A has a ribbon-like shape extending in the x-direction.

[0084] The sixth section 206A extends from the first section 201A on the right-hand side to the first side in the x-direction. In the illustrated example, the sixth section 206A has a rectangular shape extending in the x-direction.

[0085] The seventh section 207A has a ribbon-like shape that extends from the right end of the sixth section 206A in the y-direction.

[0086] The eighth section 208A extends in the y-direction from the seventh section 207A and protrudes from the sealing resin 7.

[0087] As in Fig. 3 and Fig. As shown in Figure 19, each of the first sections 201A has a multitude of depressions 2111A. The depressions 2111A are recessed from the front surface 211A in the z-direction. The shapes of the depressions 2111A, viewed in the z-direction, are not particularly limited. In the Fig. In the example shown, each of the depressions 2111A has a rectangular shape. The plurality of depressions 2111A are arranged in a matrix. The plurality of depressions 2111A are arranged at a distance Px2 in the x-direction. The plurality of depressions 2111A are arranged at a distance Py2 in the y-direction. The lengths of the distance Px2 and the distance Py2 can be the same or different from each other. In the illustrated example, the distance Px2 and the distance Py2 are the same length. The distance Px2 and the distance Py2 are greater than the distance Px1 and the distance Py1 of the depressions 1111A in the Fig. 9. In other words, the plurality of depressions 1111A has an arrangement density (the number per predetermined area) that is higher than the plurality of depressions 2111A. The cross-sectional shapes of the depressions 2111A are not particularly limited and can, for example, be the same as the cross-sectional shapes of the depressions 1111A in Fig. 16.

[0088] As in Fig. As shown in Figure 3, terminal 2B, terminal 2C and terminal 2D are arranged in the y-direction (upwards) relative to a section of terminal 2A.

[0089] The 2B connector has a first section 201B and a second section 202B.

[0090] One of the electronic components 49 (see Fig. 1) is mounted on the first section 201B. The shape of the first section 201B is not particularly constrained. The first section 201B is covered with the sealing resin 7. The position of the first section 201B in the z-direction corresponds to the positions of the first sections 201A.

[0091] The first section 201B has a multitude of depressions 2111B and a multitude of recesses 2112B.

[0092] The multitude of depressions 2111B is recessed in the z-direction. The shapes of the depressions 2111B, viewed in the z-direction, are not particularly restricted. In the illustrated example, each of the depressions 2111B has a rectangular shape similar to the depressions 2111A. The multitude of depressions 2111B is arranged side by side in the y-direction. For example, the multitude of depressions 2111B is arranged at a distance Py2 in the y-direction, similar to the multitude of depressions 2111A. The cross-sectional shapes of the depressions 2111B are not particularly restricted. In the illustrated example, the depressions 2111B have similar cross-sectional shapes to the depressions 2111A.

[0093] In the illustrated example, the recesses 2112B are formed to separate the electronic component 49 from the plurality of depressions 2111B, viewed in the z-direction. The recesses 2112B are recessed in the z-direction. In the illustrated example, the recesses 2112B have a similar cross-sectional shape to the recesses 1112A.

[0094] The second section 202B is a section of terminal 2B that protrudes from the sealing resin 7. The second section 202B projects in the y-direction on the side opposite terminal 1 with respect to the first section 201B. For example, the second section 202B is used to electrically connect the semiconductor device A1 to an external circuit. The second section 202B is bent upwards in the z-direction. The first section 201B and the second section 202B are connected to each other.

[0095] The 2C connector has a first section 201C and a second section 202C.

[0096] One of the electronic components 49 is mounted on the first section 201C. The shape of the first section 201C is not particularly constrained. The first section 201C is covered with the sealing resin 7. The position of the first section 201C in the z-direction corresponds to the positions of the first sections 201A.

[0097] The first section 201C has a multitude of depressions 2111C and a multitude of recesses 2112C.

[0098] The multitude of depressions 2111C is recessed in the z-direction. The shapes of the depressions 2111C, viewed in the z-direction, are not particularly restricted. In the example shown, each of the depressions 2111C has a rectangular shape similar to the depressions 2111A. Also in the example shown, the multitude of depressions 2111C are arranged side by side in the x-direction. As with the multitude of depressions 2111A, the multitude of depressions 2111C can be arranged at a distance Px2 in the x-direction. The cross-sectional shapes of the depressions 2111C are not particularly restricted. In the example shown, the depressions 2111C have similar cross-sectional shapes to the depressions 2111A.

[0099] The recesses 2112C are formed such that they separate the electronic component 49 from the plurality of depressions 2111C in the z-direction. The recesses 2112C are recessed in the z-direction. In the example shown, the recesses 2112C have similar cross-sectional shapes to the recesses 1112A.

[0100] The second section 202C is a section of terminal 2C that protrudes from the sealing resin 7. The second section 202C projects in the y-direction on the side opposite terminal 1 with respect to the first section 201C. The second section 202C is used, for example, to electrically connect the semiconductor device A1 to an external circuit. The second section 202C is bent upwards in the z-direction. The first section 201C and the second section 202C are connected to each other.

[0101] The 2D connector has a first section 201D and a second section 202D.

[0102] One of the electronic components 49 is mounted on the first section 201D. The shape of the first section 201D is not particularly constrained. The first section 201D is covered with the sealing resin 7. The position of the first section 201D in the z-direction corresponds to the positions of the first sections 201A.

[0103] The first section 201D has a multitude of depressions 2111D and a multitude of recesses 2112D.

[0104] The multitude of depressions 2111D is recessed in the z-direction. The shapes of the depressions 2111D are not particularly restricted in the z-direction. In the example shown, each of the depressions 2111D has a rectangular shape similar to the depressions 2111A. The multitude of depressions 2111D is arranged side by side in the X-direction. Like the multitude of depressions 2111A, the multitude of depressions 2111D can also be arranged at a distance Px2 in the X-direction. The cross-sectional shapes of the depressions 2111D are not particularly restricted. The depressions 2111D have similar cross-sectional shapes to the depressions 2111A.

[0105] The recesses 2112D are formed such that they separate the electronic component 49 from the plurality of depressions 2111D viewed in the z-direction. The recesses 2112D are recessed in the z-direction. The recesses 2112D have similar cross-sectional shapes to the recesses 1112A.

[0106] The second section 202D is a portion of terminal 2D that protrudes from the sealing resin 7. The second section 202D extends in the y-direction on the side opposite terminal 1 with respect to the first section 201D. The second section 202D is used, for example, to electrically connect the semiconductor device A1 to an external circuit. The second section 202D is bent upwards in the z-direction. The first section 201D and the second section 202D are connected to each other.

[0107] As in Fig. As shown in Figure 3, the multitude of terminals 2E are arranged on the left side in the x-direction relative to terminal 2D.

[0108] Each of the terminals 2E has a first section 201E, a second section 202E and a fourth section 204E.

[0109] The first section 201E is a section to which a wire 93 is bonded. The shape of the first section 201E is not particularly restricted. In the illustrated example, the first section 201E has a rectangular shape. The first section 201E is covered with the sealing resin 7. The position of the first section 201E in the z-direction is the same as the positions of the first sections 201A.

[0110] The second section 202E is a section of terminal 2E that protrudes from the sealing resin 7. The second section 202E projects in the y-direction on the side opposite terminal 1 with respect to the first section 201E. The second section 202E is used, for example, to electrically connect the semiconductor device A1 to an external circuit. The second section 202E is bent upwards in the z-direction.

[0111] The fourth section 204E is inserted between the first section 201E and the second section 202E. The fourth section 204E is covered with the sealing resin 7. The position of the fourth section 204E in the z-direction is the same as that of the first section 201E. The fourth section 204E is connected to the first section 201E and the second section 202E. The fourth section 204E is L-shaped.

[0112] The second sections 202E of the plurality of terminals 2E are arranged between the second section 202D of terminal 2D and one of the second sections 202A of terminal 2A in the x-direction.

[0113] As in Fig. As shown in Figure 3, the multitude of terminals 2F on the left side are arranged in the x-direction relative to the multitude of terminals 2E.

[0114] Each of the 2F connectors has a first section 201F, a second section 202F and a fourth section 204F.

[0115] The first section 201F is a section to which a wire 93 is bonded. The shape of the first section 201F is not particularly restricted. In the illustrated example, the first section 201F has a rectangular shape. The first section 201F is arranged side by side with the other first sections 201F of the plurality of terminals 2F in the x-direction. The first section 201F is covered with the sealing resin 7. The position of the first section 201F in the z-direction is the same as the positions of the first sections 201A.

[0116] The second section 202F is a section of terminal 2F that protrudes from the sealing resin 7. The second section 202F projects in the y-direction on the side opposite terminal 1 with respect to the first section 201F. The second section 202F is used, for example, to electrically connect the semiconductor device A1 to an external circuit. The second section 202F is bent upwards in the z-direction.

[0117] The fourth section 204F is inserted between the first section 201F and the second section 202F. The fourth section 204F is covered with the sealing resin 7. The position of the fourth section 204F in the z-direction is the same as the positions of the first sections 201A. The fourth section 204F is positioned between the first section 201F and the second section 202F. The fourth section 204F has an elongated shape that is inclined relative to the y-direction.

[0118] In the illustrated example, the second sections 202F of the plurality of terminals 2F are arranged between the two second sections 202A of terminal 2A in the x-direction.

[0119] As in Fig. As shown in Figure 3, terminal 2Z is ​​located on the second side in the x-direction relative to terminal 2A. Terminal 2Z is ​​not electrically connected to the first semiconductor elements 3, the second semiconductor elements 4, or the third semiconductor elements 5. Terminal 2Z has a first section 201Z, a second section 202Z, and a fourth section 204Z.

[0120] The first section 201Z is located on the left side of one of the first sections 201A of terminal 2A in the x-direction. The position of the first section 201Z in the z-direction is the same as the positions of the first sections 201A. The first section 201Z is covered with the sealing resin 7.

[0121] The second section 202Z is ​​a section of connection 2Z that protrudes from the sealing resin 7. The second section 202Z protrudes in the y-direction on the side opposite connections 1 with respect to the first section 201Z. The second section 202Z is ​​bent upwards in the z-direction.

[0122] The fourth section 204Z is covered with the sealing resin 7 and is inserted between the first section 201Z and the second section 202Z. Viewed in the z-direction, the fourth section 204Z is L-shaped. The fourth section 204Z has a plurality of depressions 2111Z.

[0123] The multitude of depressions 2111Z is recessed in the z-direction. The shapes of the depressions 2111Z, viewed in the z-direction, are not particularly restricted. In the illustrated example, each of the depressions 2111Z has a rectangular shape similar to the depressions 2111A. The multitude of depressions 2111Z is arranged in a matrix. Like the multitude of depressions 2111A, the multitude of depressions 2111Z can also be arranged at a distance Px2 in the x-direction. The multitude of depressions 2111Z is arranged at a distance Py2 in the y-direction, similar to the multitude of depressions 2111A. The cross-sectional shapes of the depressions 2111Z are not particularly restricted. In the illustrated example, the depressions 2111Z have similar cross-sectional shapes to the depressions 2111A.

[0124] As in Fig. As shown in Figure 3, the second section 202B, the second section 202C, and the second section 202D are arranged side by side with a distance x1 in the x-direction. The plurality of second sections 202E, the plurality of second sections 202F, the two second sections 202A, and the second section 202Z are arranged side by side with a distance x2 in the x-direction. The distance x1 is greater than the distance x2. The distance between the second section 202D and the adjacent second section 202E is x1.

[0125] The first semiconductor elements 3 are functional elements for the semiconductor device A1, which is intended to function as an IPM. The first semiconductor elements 3 are power semiconductor elements. For example, a three-phase alternating current, which is a control target in the IPM, flows into and out of the first semiconductor elements 3. Each of the first semiconductor elements 3 is typically an insulated-gate bipolar transistor (IGBT), a bipolar transistor, a metal-oxide-semiconductor field-effect transistor (MOSFET), or similar. The first semiconductor elements 3 are mounted on the front surface 111A of the first section 101A of terminal 1A, the front surface 111B of the first section 101B of terminal 1B, the front surface 111C of the first section 101C of terminal 1C, and the front surface 111D of the first section 101D of terminal 1D.

[0126] The first semiconductor elements 3 have first electrodes 31, second electrodes 32, and third electrodes 33. The first electrodes 31 are arranged such that they face the front surfaces 111A, 111B, 111C, and 111D (see Fig. 6) The second electrodes 32 and the third electrodes 33 are arranged in the z-direction relative to the first electrodes 31 (see Fig. 3).

[0127] If the first three semiconductor elements are IGBTs, the first three electrodes are collector electrodes, the second three electrodes are emitter electrodes, and the third three electrodes are gate electrodes. If the first three semiconductor elements are bipolar transistors, the first three electrodes are collector electrodes, the second three electrodes are emitter electrodes, and the third three electrodes are base electrodes. If the first three semiconductor elements are MOSFETs, the first three electrodes are drain electrodes, the second three electrodes are source electrodes, and the third three electrodes are gate electrodes.

[0128] As in the Fig. 3 and Fig. As shown in Figure 6, three first semiconductor elements 3 are mounted on the front surface 111A of the first section 101A of the terminal 1A. The arrangement of the three first semiconductor elements 3 is not particularly restricted. In the example shown, the three first semiconductor elements 3 are arranged next to each other at equal intervals in the x-direction. The first semiconductor elements 3 are mounted on the first section 101A by bonding the first electrodes 31 and the front surface 111A with bonding layers 39. The bonding layers 39 consist of conductive bonding materials, which contain, for example, silver.

[0129] One first semiconductor element 3 is mounted on each of the front surfaces 111B, 111C, and 111D. The first electrodes 31 of the first semiconductor elements 3 are bonded to the front surfaces 111B, 111C, and 111D, for example, by means of the bonding layers 39. Six first semiconductor elements 3 on the first sections 101A, 101B, 101C, and 101D are arranged side by side in the x-direction, and their positions in the y-direction are equal.

[0130] The third semiconductor elements 5 are elements that, for example, support the functions of the first semiconductor elements 3 and can be fast recovery diodes (FRDs) for rectifying a three-phase alternating current, which is a control target in the IPM. In the illustrated example, three third semiconductor elements 5 are mounted on the front surface 111A of the first section 101A. One third semiconductor element 5 is mounted on each of the front surfaces 111B, 111C, and 111D. The third semiconductor elements 5 are arranged on the second side in the y-direction relative to the respective first semiconductor elements 3 and aligned with them in the y-direction.

[0131] The third semiconductor elements 5 have first electrodes 51 and second electrodes 52. The first electrodes 51 are arranged such that they face the front surfaces 111A, 111B, 111C and 111D. As shown in Fig. As shown in Figure 7, the first electrodes 51 are connected to the front surfaces 111A, 111B, 111C and 111D by bonding layers 59. The bonding layers 59 consist of conductive bonding materials, which contain, for example, silver.

[0132] The second semiconductor elements 4 are control semiconductor elements for controlling the operation of the first semiconductor elements 3 and can be driver ICs. As in Fig. 3 and Fig. As shown in Figure 7, two second semiconductor elements 4 are mounted on the first two sections 201A of terminal 2A. The second semiconductor elements 4 are connected to the front surfaces 211A of the first sections 201A by bonding layers 45. The bonding layers 45 consist, for example, of conductive or insulating bonding materials.

[0133] Each of the second semiconductor elements 4 has a plurality of first electrodes 41 and a plurality of second electrodes 42. The plurality of first electrodes 41 is arranged on the terminal 1 side (on the side of the first semiconductor elements 3) in the y-direction. The plurality of second electrodes 42 is arranged on the first side in the z-direction or on the second side in the x-direction relative to the plurality of first electrodes 41.

[0134] The electronic components 49 are elements that support the functions of the second semiconductor element 4, e.g., diodes. As in Fig. 3 and Fig. As shown in Figure 7, the electronic components 49 are mounted on the first section 201B of terminal 2B, the first section 201C of terminal 2C, and the first section 201D of terminal 2D, respectively. The electronic components 49 are bonded to the first sections 201B, 201C, and 201D by bonding layers 491. The bonding layers 491 are made of conductive bonding materials, which, for example, contain silver.

[0135] The wires 91, 92, and 93 serve to electrically connect the plurality of terminals 1, the plurality of terminals 2, the first semiconductor elements 3, the second semiconductor elements 4, and the third semiconductor elements 5 in a predetermined relationship and in a suitable manner. The material and size of each of the wires 91, 92, and 93 are not particularly limited. In the present embodiment, for example, the wires 91 can be made of aluminum (Al) and the wires 92 and 93 of gold (Au). The wires 91 have a larger diameter than the wires 92 and 93. The wires 91 can be made of a different metal, such as gold (Au) or copper (Cu). Likewise, the wires 92 and 93 can be made of a metal other than gold (Au).

[0136] As in Fig. As shown in Figure 3, the semiconductor component A1 contains six wires 91. The wires 91 are connected to the second electrodes 32 of the first semiconductor elements 3 and the second electrodes 52 of the third semiconductor elements 5. Also viewed from the first side (right side) to the other side in the x-direction, the wires 91 are connected to the respective second electrodes 52 of the corresponding third semiconductor elements 5 and further to the fourth section 104B, the fourth section 104C, the fourth section 104D, the fourth section 104E, the fourth section 104F and the fourth section 104G.

[0137] The plurality of wires 92 is connected to the second electrodes 32 and the third electrodes 33 of the first semiconductor elements 3 and to the first electrodes 41 of the second semiconductor elements 4. The second electrodes 32 and the third electrodes 33 of the three first semiconductor elements 3, which are mounted on the first section 101A, are connected to the plurality of first electrodes 41 of the second semiconductor element 4 on the first side in the x-direction (right side) by the plurality of wires 92. The third electrodes 33 of the three first semiconductor elements 3, which are each mounted on the first sections 101B, 101C and 101D, are connected to the plurality of first electrodes 41 of the second semiconductor element 4 on the second side in the x-direction (left side) by the plurality of wires 92.

[0138] The second electrodes 42 of the second semiconductor element 4 on the first side in the x-direction (right side) are connected to the plurality of electronic components 49, the first sections 201B, 201C, 201D and 201E and the fifth section 205A by the plurality of wires 93. Each of the sections of the first sections 201B, 201C, 201D and 201E and the fifth section 205A, to which the wires 93 are bonded, can be provided with a plating layer, e.g., made of Ag.

[0139] The second electrodes 42 of the second semiconductor element 4 on the second side in the x-direction (left side) are connected to the first sections 201F and the fourth sections 204A by the plurality of wires 93. Each of the sections of the first sections 201F and the fourth sections 204A, to which the wires 93 are bonded, can, for example, be provided with a plating layer of Ag.

[0140] As in Fig. As shown in Figure 8, the plurality of recesses 1112A on the first side in the y-direction of the first section 101A encloses three areas 1115A. In the illustrated example, each of the areas 1115A has a rectangular shape, and a first semiconductor element 3 is arranged in each of the areas 1115A. The plurality of recesses 1112A surrounding the three areas 1115A are surrounded by the plurality of recesses 1113A. Also in the first section 101A, the multiple recesses 1112A on the second side in the y-direction surround the three areas 1116A. Each of the areas 1116A has a rectangular shape, and a third semiconductor element 5 is arranged in each of the areas 1116A. The plurality of recesses 1112A surrounding the areas 1116A are surrounded by the plurality of recesses 1113A.

[0141] As in Fig. As shown in Figure 8, the number of arrangements of recesses 1111A in the y-direction is selected according to their position. For example, the number of arrangements M1 between the fourth surfaces 124A and the areas 1116A (third semiconductor elements 5) is seven. The number of arrangements M2 between area 1116A (a third semiconductor element 5) and area 1115A (the corresponding first semiconductor element 3) is two. The number of arrangements M3 between area 1116A (another third semiconductor element 5) and area 1115A (the corresponding first semiconductor element 3) is two. The number of arrangements M4 between areas 1115A (first semiconductor element 3) and the third surface 123A is one. In the example shown, M1 > M2 = M3 > M4. The number of arrangements of recesses 1111A in the X-direction is also selected according to their position.For example, the number of arrays N1 between the first surface 121A and area 1116A (third semiconductor element 5), the number of arrays N2 between the adjacent areas 1116A (third semiconductor element 5), and the number of arrays N3 between the second surface 122A and area 1116A (third semiconductor element 5) are all equal, i.e., N1 = N2 = N3 = 3. On the other hand, the number of arrays N4 between the first surface 121A and area 1115A (first semiconductor element 3) and the number of arrays N5 between the second surface 122A and area 1115A (first semiconductor element 3) are all equal. In other words, in the example shown, N1 = N2 = N3 > N4 = N5.

[0142] The support element 6 carries the terminals 1A, 1B, 1C, and 1D and transfers heat via these terminals, for example, from the first semiconductor elements 3 and the third semiconductor elements 5 to the outer surface of the semiconductor device A1. The support element 6 is made of ceramic and has a rectangular, plate-like shape. It is preferred that the support element 6 be made of ceramic with regard to strength, thermal conductivity, and insulation. However, the material of the support element 6 is not limited to this, and various other materials can be used to form the support element 6. A plate-like support element 6 is preferable for thinning the semiconductor device A1, but the support element 6 can have various other shapes.

[0143] As in the Fig. 3, Fig. 6 and Fig. As shown in Figure 7, the support element 6 has a front support element surface 61, a rear support element surface 62, a first support element surface 63, a second support element surface 64, a third support element surface 65 and a fourth support element surface 66.

[0144] The front support element surface 61 faces the first side in the z-direction and also faces the connections 1A, 1B, 1C, and 1D. The rear support element surface 62 faces the side opposite the front support element surface 61. The rear support element surface 62 is exposed by the sealing resin 7.

[0145] The first support element surface 63 is located between the front support element surface 61 and the rear support element surface 62 in the z-direction and faces the first side in the x-direction. The first support element surface 63 is connected to the front support element surface 61 and the rear support element surface 62.

[0146] The second support element surface 64 is located between the front support element surface 61 and the rear support element surface 62 in the z-direction and faces the second side in the x-direction. The second support element surface 64 is connected to the front support element surface 61 and the rear support element surface 62.

[0147] The third support element surface 65 is located between the front support element surface 61 and the rear support element surface 62 in the z-direction and faces the first side in the y-direction. The third support element surface 65 is connected to the front support element surface 61 and the rear support element surface 62.

[0148] The fourth support element surface 66 is located between the front support element surface 61 and the rear support element surface 62 in the z-direction and faces the side opposite the third support element surface 65 in the y-direction. The fourth support element surface 66 is connected to the front support element surface 61 and the rear support element surface 62.

[0149] The rear surfaces 112A, 112B, 112C, and 112D of the terminals 1A, 1B, 1C, and 1D are bonded to the front carrier surface 61 of the carrier element 6 via bonding layers 69. It is preferred that the bonding layers 69 connect the carrier element 6, which is made of, for example, ceramic, to the terminals 1A, 1B, 1C, and 1D, which are made of, for example, copper, in a suitable manner and exhibit relatively good thermal conductivity. The bonding layers 69 can, for example, be a resin adhesive with excellent thermal conductivity.

[0150] The sealing resin 7 partially or completely covers the plurality of terminals 1, the plurality of terminals 2, the plurality of first semiconductor elements 3, the plurality of second semiconductor elements 4, the plurality of third semiconductor elements 5, the plurality of electronic components 49, the plurality of wires 91, 92 and 93 and the carrier element 6. The sealing resin 7 is, for example, a black epoxy resin.

[0151] As in the Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. As shown in Figure 7, the sealing resin 7 has a front resin surface 71, a rear resin surface 72, a first resin surface 73, a second resin surface 74, a third resin surface 75 and a fourth resin surface 76.

[0152] The front resin surface 71 faces outwards towards the first side in the z-direction, while also facing inwards towards the terminals 1A, 1B, 1C and 1D. The rear resin surface 72 faces the side opposite the front resin surface 71 in the z-direction.

[0153] The first resin surface 73 is located between the front resin surface 71 and the rear resin surface 72 in the z-direction and faces the first side in the x-direction. The first resin surface 73 is connected to the front resin surface 71 and the rear resin surface 72.

[0154] The second resin surface 74 is located between the front resin surface 71 and the rear resin surface 72 in the z-direction and faces the second side in the x-direction. The second resin surface 74 is connected to the front resin surface 71 and the rear resin surface 72.

[0155] The third resin surface 75 is located between the front resin surface 71 and the rear resin surface 72 in the z-direction and faces the first side in the y-direction. The third resin surface 75 is connected to the front resin surface 71 and the rear resin surface 72.

[0156] The fourth resin surface 76 is located in the z-direction between the front resin surface 71 and the rear resin surface 72 and faces the side opposite the third resin surface 75 in the y-direction. The fourth resin surface 76 is connected to the front resin surface 71 and the rear resin surface 72.

[0157] The sealing resin 7 has a recess 710, a recess 720 and a multitude of recesses 730.

[0158] As in the Fig. 3 and Fig. As shown in Figure 8, the recess 710 is cut out of the first resin surface 73 in the x-direction and serves to fix the semiconductor component A1 when mounted. The shape of the recess 710 is not particularly constrained. In the example shown, the recess 710 has a first surface 711 and a pair of second surfaces 712. The first surface 711 forms the bottom surface of the recess 710 and is, for example, a recessed curved surface. The pair of second surfaces 712 connects to the respective ends of the first surface 711 and to the first resin surface 73. The pair of second surfaces 712 are, for example, surfaces along the x-direction. The position of the recess 710 in the y-direction coincides with a section of the first section 101A. In other words, the recess 710 overlaps with the first section 101A as seen in the x-direction.

[0159] Fig. Figure 8 shows a pair of first virtual lines L1. The pair of first virtual lines L1 extends along the x-direction from the respective ends of the first surface 121A in the y-direction to the first resin surface 73. Viewed in the z-direction, an area enclosed by the first surface 121A, the first resin surface 73, the recess 710 and the pair of first virtual lines L1 is referred to as the first area or surface S1.

[0160] Fig. Figure 8 shows a pair of second virtual lines L2. The pair of second virtual lines L2 extends along the x-direction from the respective ends of the recess 710 in the y-direction (the pair of second surfaces 712 in the example shown) to the first surface 121A. Viewed in the z-direction, an area enclosed by the first surface 121A, the recess 710, and the pair of second virtual lines L2 is referred to as the second area or surface S2. The second surface S2 is contained within the first surface S1 as part of the first surface S1.

[0161] The plurality of terminals 1 is arranged in a region that avoids the first region S1 when viewed in the z-direction. In other words, none of the plurality of terminals 1 is located in the first surface S1 when viewed in the z-direction. The first surface 121A of terminal 1A borders the first region S1. In other words, the plurality of protruding regions 131A and the plurality of recessed regions 132A border the first region S1.

[0162] The plurality of terminals 1 are arranged in a region that avoids the second region S2 when viewed in the z-direction. In other words, none of the plurality of terminals 1 are located in the second region S2 when viewed in the z-direction. The first surface 121A of terminal 1A borders the second surface S2. In other words, the plurality of protruding regions 131A and the plurality of recessed regions 132A border the first region S1.

[0163] The first support element surface 63 of support element 6 is located between the first surface 121A and the first resin surface 73, viewed in the z-direction (in the x-direction). The first support element surface 63 intersects, viewed in the z-direction, with the first region S1. The first support element surface 63 is located between the first surface 121A and the recess 710 (first surface 711), viewed in the z-direction (in the x-direction). The first support element surface 63 intersects, viewed in the z-direction, with the second region S2.

[0164] As in the Fig. 3 and Fig. As shown in Figure 18, the recess 720 is cut out of the second resin surface 74 in the x-direction and serves to fix the semiconductor component A1 when mounted. The shape of the recess 720 is not particularly constrained. In the illustrated example, the recess 720 has a first surface 721 and a pair of second surfaces 722. The first surface 721 forms the bottom surface of the recess 720 and is, for example, a recessed curved surface. The pair of second surfaces 722 are connected to the respective ends of the first surface 721 and to the second resin surface 74. The pair of second surfaces 722 are, for example, surfaces along the x-direction. The position of the recess 720 in the y-direction coincides with a section of the first section 101D. In other words, the recess 720 overlaps with the first part 101D as seen in the x-direction.

[0165] Fig. Figure 18 shows a pair of third virtual lines L3. The pair of third virtual lines L3 extends along the x-direction from the respective ends of the second surface 122D in the y-direction to the second resin surface 74. Viewed in the z-direction, an area enclosed by the second surface 122D, the second resin surface 74, the recess 720 and the pair of third virtual lines L3 is referred to as the third area or surface S3.

[0166] Fig. Figure 18 shows a pair of fourth virtual lines L4. The pair of fourth virtual lines L4 extends along the x-direction from the respective ends of the recess 720 in the y-direction (the pair of second surfaces 722 in the example shown) to the second surface 122D. Viewed in the z-direction, an area enclosed by the second surface 122D, the recess 720, and the pair of fourth virtual lines L4 is designated as a fourth area or surface S4. The fourth area S4 is contained within the third area S3 as part of the third area S3.

[0167] A section of the fourth part 104G of terminal 1G from the plurality of terminals 1 is, viewed in the z-direction, located within the third region S3. In other words, the plurality of terminals 1, with the exception of terminal 1G, is located in a region that avoids the third region S3 viewed in the z-direction. The second surface 122D of terminal 1D borders the third region S3.

[0168] The plurality of terminals 1 are arranged in a region that avoids the fourth region S4 when viewed in the z-direction. In other words, none of the plurality of terminals 1 is located in the fourth region S4 when viewed in the z-direction. The second surface 122D of terminal 1D borders the fourth region S4.

[0169] The second support element surface 64 of support element 6 is located between the second surface 122D and the second resin surface 74, viewed in the z-direction (in the x-direction). The second support element surface 64 of support element 64 intersects the third region S3 in the z-direction (in the x-direction). The second support element surface 64 of the support element is located between the second surface 122D and the recess 720 (first surface 721), viewed in the z-direction (in the x-direction). The second support element surface 64 of the support element intersects the fourth region S4 in the z-direction. <Erste Ausführungsform; Montagestruktur B1>

[0170] The Fig. 20 and Fig. Figure 21 shows a mounting structure B1 according to a first embodiment of the present disclosure. The mounting structure B1 is a form of the mounting structure of the semiconductor component A1 and is mounted on a mounting element 81. The mounting structure B1 comprises a semiconductor component A1, a mounting element 81, an intermediate element 82, and fastening elements 83.

[0171] The mounting element 81 is an element on which the semiconductor component A1 is mounted. The material and shape of the mounting element 81 are not particularly restricted. In the example shown, the mounting element 81 is shaped such that it has a flat front surface 811 facing the first side in the z-direction. The material of the mounting element 81 is a metal with excellent thermal conductivity, such as aluminum.

[0172] The intermediate element 82 is provided between the semiconductor component A1 and the mounting element 81. In the illustrated example, the intermediate element 82 is arranged between the front surface 811 of the mounting element 81 and the rear support element surface 62 and the rear resin surface 72 of the semiconductor component A1. The intermediate element 82 fills the gap between the front surface 811 and the rear support element surface 62. The intermediate element 82 is preferably made of an insulating material and can, for example, be a sheet-like material consisting of an insulating resin with excellent thermal conductivity. The intermediate element 82 has a size and shape that, viewed in the z-direction, approximately matches that of the semiconductor component A1 (sealing resin 7).

[0173] The fasteners 83 secure the semiconductor component A1 to the mounting element 81 with the intermediate element 82 positioned between them. The specific structure of each of the fasteners 83 is not particularly limited. In the example shown, the fasteners 83 are bolts. More precisely, the fasteners 83 are screwed into internal screws provided in the mounting element 81, so that the semiconductor component A1 is attached to the mounting element 81 via the intermediate element 82. Viewed in the z-direction, sections of the fasteners 83 are received by the recesses 710 and 720. The fastening force of the fasteners 83 is applied to the front resin surface 71 of the sealing resin 7.

[0174] Next, the advantages of the semiconductor component A1 and the mounting structure B1 will be described.

[0175] According to the present embodiment, the first surface 121A is provided with a plurality of protruding areas 131A and a plurality of recessed areas 132A. The first surface 121A is rougher than, for example, the third surface 123A, which increases the bonding strength between the first surface 121A and the sealing resin 7. Accordingly, the semiconductor component A1 can suppress cracks in the sealing resin 7 and improve the reliability of the sealing resin 7.

[0176] As in Fig. As shown in Figure 8, the first surface 121A is the surface closest to the first resin surface 73 of the sealing resin 7. None of the plurality of connections 1 is located in the first region S1 between the first resin surface 73 and the first surface 121A. Accordingly, a crack forming in the first surface 121A can reach the first resin surface 73 and be exposed to the outside. According to the present embodiment, the plurality of protruding regions 131A and the plurality of recessed regions 132A are provided to suppress cracks that can reach the first resin surface 73.

[0177] As in Fig. As shown in Figure 8, the sealing resin 7 is provided with the recess 710. The second area S2 adjacent to the recess 710 is an area where the dimension in the x-direction decreases outwards from the first surface 121A. The multiple protruding areas 131A and the multiple recessed areas 132A border the second area S2, as described above. This makes it possible to suppress cracks in the second area S2.

[0178] As in Fig. 20 and Fig. As shown in Figure 21, one of the fastening elements 83 is attached to the mounting element 81 using the recess 710 of the sealing resin 7 in the mounting structure B1. The fastening force is applied to the second region S2 of the sealing resin 7. The resulting stress can cause a crack in the sealing resin 7, starting in the section of the first surface 121A that borders the first region S1 and the second region S2. According to the present embodiment, the plurality of the protruding regions 131A and the plurality of the recessed regions 132A can suppress cracking in the sealing resin 7 due to the fastening force of the fastening element 83.

[0179] In the assembly structure B1, the intermediate element 82 is arranged between the support element 6 and the mounting element 81. As the hardness of the sheet-shaped material of the intermediate element 82 increases, it is more likely that a crack will form in the sealing resin 7 in the first region S1 and in the second region S2 due to the fastening force of the fasteners 83. The present embodiment can suppress the formation of such a crack.

[0180] Referring again to Fig. 9: If the radius of curvature R1 of each protruding region 131A and the radius of curvature R2 of each recessed region 132A are different from each other, continuous crack propagation across the plurality of protruding regions 131A and the plurality of recessed regions 132A can be suppressed. It is advantageous for suppressing crack propagation if the radius of curvature R1 is smaller than the radius of curvature R2.

[0181] As in the Fig. 11, Fig. 12 to Fig. As shown in Figure 13, the first surface 121A has the first region 1211A and the second region 1212A. The first region 1211A is rougher than the second region 1212A, and this contributes to the suppression of cracking. Furthermore, the surface roughness attributed to the multitude of protruding regions 131A and the multitude of recessed regions 132A (where the surface roughness is greater than that of the first region 1211A) can more reliably suppress cracking.

[0182] Since the maximum dimension Zm1 is larger than the minimum dimension Zm2, the boundary between the first region 1211A and the second region 1212A forms a roughly wavy line corresponding to the arrangement of the plurality of protruding regions 131A and the plurality of recessed regions 132A. This is preferred to suppress crack propagation along the first surface 121A.

[0183] The second sections 1122A of the rear surface 112A are surfaces that are curved on the first side in the z-direction (towards the front surface 111A). A multitude of such second sections 1122A, arranged in the y-direction, can suppress the formation of cracks.

[0184] The first projection 141A extends in the z-direction relative to the front surface 111A. This allows for a further increase in the bonding strength between the first projection 101A and the sealing resin 7 and is therefore preferred for suppressing crack formation in the sealing resin 7.

[0185] The third surface 123A is not provided with the plurality of protruding areas 131A and the plurality of recessed areas 132A and is smoother than the first surface 121A. The third surface 123A is located opposite the protrusion 2A. Terminal 1A and terminal 2A have a difference in the voltage applied to them, and the potential difference between them tends to be large. It is preferred that the third surface 123A be smooth, as described above, in order to more reliably insulate terminal 1A and terminal 2A from each other.

[0186] As in the Fig. 3, Fig. 8 and Fig. As shown in Figure 9, the front surface 111A of the first section 101A is formed by the plurality of depressions 1111A. This increases the bonding strength between the front surface 111A and the sealing resin 7.

[0187] As in the Fig. 9 and Fig. As shown in Figure 19, the plurality of recesses 1111A has a higher arrangement density than the plurality of recesses 2111A. The first semiconductor elements 3 on terminal 1A generate more heat than the second semiconductor elements 4 on terminal 2A. Due to the heat generated at terminal 1A, the sealing resin 7 is likely more prone to detachment, and therefore, increasing the arrangement density of the plurality of recesses 1111A at terminal 1A can suppress the detachment of the sealing resin 7.

[0188] As in the Fig. 3 and Fig. As shown in Figure 8, the first semiconductor element 3 and the third semiconductor element 5 are surrounded by recesses 1112A and 1113A. This prevents the bonding layers 39 and 59, which bond the first semiconductor elements 3 and the third semiconductor elements 5, from spreading towards their edges during the manufacturing process.

[0189] Fig. Figure 3 shows an example of the arrangement of the fasteners 83 with respect to the semiconductor device A1 using an imaginary line. The example shown is the case in which the fasteners 83 include screws and washers, and shows the areas occupied by these washers. The size of each fastener 83, including the washer, is not particularly limited, and Fig. Figure 3 shows an example where the dimension of the sealing resin 7 in the x-direction is 37 mm, its dimension in the y-direction is 23 mm, and the diameter of each washer is 8 mm. In the example shown, the fasteners 83 intersect with the first support element surface 63 and the second support element surface 64 of the support element 6, viewed in the z-direction. In the example shown, the fasteners 83 intersect with the first surface 121A of the connection 1A and the second surface 122D of the connection 1D, viewed in the z-direction. In such an example, the fastening force of the corresponding fastener 83 tends to act on the first surface 121A, and the multitude of protruding areas 131A and the multitude of recessed areas 132A effectively prevent the sealing resin 7 from detaching.Regarding the second surface 122D, a section of the fourth section 104G of connection 1G is located within the third area S3. It is assumed that such a structure prevents the fastening force from acting on the second surface 122D and that the formation of cracks in the sealing resin 7, starting from the second surface 122D, is prevented.

[0190] The Fig. 22, Fig. 23, Fig. 24, Fig. 25 to Fig. Figure 26 shows variations and other embodiments of the present disclosure. In these figures, elements that are identical or similar to those in the embodiment above are designated with the same reference numerals as in the embodiment above. <Erste Variation der ersten Ausführungsform; Halbleiterbauteil A11>

[0191] Fig. Figure 22 shows a first variation of the semiconductor component A1. In a semiconductor component A11 in Fig. 22 The first section 101D of the connection 1D is provided with a plurality of protruding areas 131D and a plurality of recessed areas 132D. The plurality of protruding areas 131D and the plurality of recessed areas 132D have the same structures as the plurality of protruding areas 131A and the plurality of recessed areas 132A described above.

[0192] In the present variation, the plurality of protruding areas 131D and the plurality of recessed areas 132D are formed on the second surface 122D, the fourth surface 124D, and the eighth surface 128D of the first section 101D. In other words, the plurality of protruding areas 131D and the plurality of recessed areas 132D border the third area S3 and the fourth area S4.

[0193] The present variation can also improve the reliability of the sealing resin 7. Furthermore, the present variation can prevent the formation of cracks in the sealing resin 7, starting from the second surface 122D. <Zweite Variation der ersten Ausführungsform; Halbleiterbauteil A12>

[0194] The Fig. 23 and Fig. Figure 24 shows a second variation of the semiconductor device A1. In a semiconductor device A12 shown in the figures, the surfaces of the first sections 101A, 101B, 101C, and 101D, which define the shapes of these parts as seen in the z-direction, with the exception of the third surfaces 123A, 123B, 123C, and 123D, are provided with a plurality of protruding regions 131A, 131B, 131C, and 131D and a plurality of recessed regions 132A, 132B, 132C, and 132D. The plurality of protruding regions 131B, 131C and the plurality of recessed regions 132B, 132C have the same structures as the plurality of protruding regions 131A and the plurality of recessed regions 132A described above.

[0195] Fig. Figure 24 shows terminal 1A and terminal 1B as an example of terminals 1 that are adjacent to each other. The plurality of protruding areas 131A and the plurality of recessed areas 132A provided for the second surface 122A, and the plurality of protruding areas 131B and the plurality of recessed areas 132B provided for the first surface 121B, are arranged parallel to each other. In other words, viewed in the x-direction, the protruding areas 131A and the recessed areas 132B overlap, and the recessed areas 132A and the protruding areas 131B overlap each other. A dimension x3, which specifies the distance between the protruding areas 131A and the recessed areas 132B, and a dimension x4, which specifies the distance between the recessed areas 132A and the protruding areas 131B, are equal. If dimension x3 and dimension x4 are equal, a relationship is established in which, for example,dimension x3 and dimension x4 are both larger than dimension x5, which is the smallest dimension between the protruding areas 131A and the protruding areas 131B in the x-direction, and both are smaller than dimension x6, which is the largest dimension between the recessed areas 132A and the recessed areas 132B in the x-direction.

[0196] The present variation can also improve the reliability of the sealing resin 7. Furthermore, the present variation can prevent the formation of cracks in the sealing resin 7 over larger areas of the first sections 101A, 101B, 101C and 101D. As described in Fig. As shown in Figure 24, since the second surface 122A and the first surface 121B, which are adjacent to each other, are approximately parallel to each other, it is possible to suppress cracking and at the same time avoid adjacent sections of the first section 101A and the first section 101B being inappropriately close to each other. <Dritte Variation der ersten Ausführungsform; Halbleiterbauteil A13>

[0197] Fig. Figure 25 shows a third variation of the semiconductor component A1. In one in Fig. In the semiconductor component A13 shown in Figure 25, all surfaces of the first sections 101A, 101B, 101C and 101D, which define the shapes of these sections seen in the z-direction, are provided with a plurality of protruding areas 131A, 131B, 131C and 131D and a plurality of recessed areas 132A, 132B, 132C and 132D.

[0198] The present variation can also improve the reliability of the sealing resin 7. Furthermore, the present variation can prevent the formation of cracks in the sealing resin 7 over even larger areas of the first sections 101A, 101B, 101C and 101D. <Zweite Ausführungsform; Halbleiterbauteil A2>

[0199] Fig. Figure 26 shows a semiconductor component according to a second embodiment of the present disclosure. A Fig. The semiconductor component A2 shown in 26 differs from that in the embodiment above in the configurations of the first semiconductor elements 3.

[0200] The first semiconductor elements 3 of the present embodiment are, for example, SiC MOSFETs. Each of the first semiconductor elements 3 has a first electrode 31, a second electrode 32, and a third electrode 33 and has a built-in section that performs a function corresponding to that of the third semiconductor elements 5 described above. Accordingly, the semiconductor device A2 does not contain a third semiconductor element 5.

[0201] Since the semiconductor component A2 does not contain a third semiconductor element 5, the first section 101A has a different structure than in the embodiment described above. The first section 101A is not provided with the areas 1116A described above. The y-dimensional dimension of the first section 101A is smaller than the y-dimensional dimension of the first section 101A in the embodiment described above. It should be noted that each of the first sections 101B, 101C, and 101D can also have the same structure as the first section 101A to correspond to the configurations of the first semiconductor elements 3.

[0202] It is understood that the present embodiment has the same advantages as the embodiment above and can improve the reliability of the sealing resin 7. Furthermore, the present embodiment can reduce the dimensions of the entire semiconductor component A2 in the y-direction, which is advantageous for miniaturization.

[0203] Clause 1. Semiconductor component with: a first connection; a first semiconductor element; and a sealing resin that covers at least one section of both the first terminal and the first semiconductor element, wherein the first terminal includes a first section of the first terminal comprising: a front surface of the first terminal on which the first semiconductor element is mounted; a rear surface of the first terminal opposite the front surface of the first terminal; and a first surface of the first terminal arranged between the front surface of the first terminal and the rear surface of the first terminal in a thickness direction in which the front surface of the first terminal and the rear surface of the first terminal are separated from each other, the first semiconductor element is mounted on the front surface of the first terminal, and the first surface of the first connection is covered with the sealing resin and is formed with a multitude of protruding areas and a multitude of recessed areas, arranged alternately in the thickness direction.

[0204] Clause 2. Semiconductor component according to Clause 1, further comprising a support element to which the rear surface of the first terminal is attached.

[0205] Clause 3. Semiconductor device according to Clause 2, wherein the sealing resin has a front resin surface facing the same side as the front surface of the first terminal, a rear resin surface facing the same side as the rear surface of the first terminal, and a first resin surface arranged between the front resin surface and the rear resin surface in the thickness direction and separated from the first surface of the first terminal in a first direction perpendicular to the thickness direction.

[0206] Clause 4. Semiconductor device according to Clause 3, wherein the first surface of the first terminal is closest to the surfaces of the first terminal of the first resin surface.

[0207] Clause 5. Semiconductor device according to Clause 4, wherein the connection is provided in a region which avoids a first region which is surrounded by the first surface of the first connection, the first resin surface and a pair of first virtual lines which extend along a first direction from the respective ends of the first surface of the first connection to the first resin surface, seen in the thickness direction.

[0208] Clause 6. Semiconductor component according to Clause 5, wherein the sealing resin has a first resin recess which is recessed from the first resin surface in the direction of the first surface of the first terminal, viewed in the thickness direction.

[0209] Clause 7. Semiconductor component according to Clause 6, wherein the first resin recess surrounds the first area together with the first surface of the first terminal, the first resin surface and the pair of first virtual lines, viewed in the thickness direction.

[0210] Clause 8. Semiconductor component according to one of clauses 3 to 7, wherein the support element has a front support element surface facing the same side as the front surface of the first connection and to which the rear surface of the first connection is attached, a rear support element surface facing one side opposite the front support element surface, and a first support element surface arranged in the thickness direction between the front support element surface and the rear support element surface, and wherein the first support element surface is located in the thickness direction between the first surface of the first connection and the first resin surface. Clause 9. Semiconductor component according to one of clauses 3 to 8, wherein the first surface of the first connection has a first region of the first surface and a second region of the first surface that lie side by side in a thickness direction, and wherein The first area of ​​the first surface is rougher than the second area of ​​the first surface.

[0211] Clause 10. Semiconductor device according to Clause 9, wherein the first region of the first surface is closer to the front surface of the first terminal than the second region of the first surface.

[0212] Clause 11. Semiconductor device according to Clause 10, wherein the first terminal has a first projection which is located between the front surface of the first terminal and the first region of the first surface and which projects from the front surface of the first terminal in the thickness direction.

[0213] Clause 12. Semiconductor component according to clause 10 or 11, wherein the rear surface of the first terminal includes a first section of the rear surface and a second section of the rear surface, wherein the first section of the rear surface includes a section that overlaps with the first semiconductor element in a thickness direction, wherein the second section of the rear surface is surrounded by the first surface of the first terminal and a line segment that connects the bottoms of adjacent recessed areas in a thickness direction, and wherein The second section of the rear surface is inclined in the direction of thickness towards the front surface of the first connection with increasing distance from the first section of the rear surface in the first direction.

[0214] Clause 13. Semiconductor component according to any of Clauses 2 to 12, wherein a radius of curvature of each of the foregoing regions is smaller than a radius of curvature of each of the recessed regions.

[0215] Clause 14. Semiconductor component according to one of Clauses 2 to 13, wherein the plurality of protruding areas and the plurality of recessed areas are provided over the entirety of the first surface of the first terminal in one thickness direction.

[0216] Clause 15. Semiconductor component according to one of clauses 2 to 14, further comprising: a second semiconductor element for controlling the first semiconductor element; and a second terminal to which the second semiconductor element is mounted, wherein a voltage applied to the first terminal is higher than a voltage applied to the second terminal.

[0217] Clause 16. Semiconductor component according to Clause 15, wherein the second terminal has a first section of the second terminal to which the second semiconductor element is mounted, and wherein the first section of the second connection is offset from the first section of the first connection in the thickness direction to one side, which faces the front surface of the first connection.

[0218] Clause 17. Semiconductor device according to Clause 15 or 16, wherein the first terminal and the second terminal are separated from each other in a second direction which is perpendicular to both the thickness direction and the first direction, the first connection has a second section of the first connection which projects from the sealing resin to a side opposite the second connection in the second direction, and wherein the second connection has a second section of the second connection that protrudes from the sealing resin to a side opposite the first connection in the second direction.

[0219] Clause 18. Assembly structure of a semiconductor component including: a semiconductor component according to one of clauses 1 to 17; a mounting element on which the semiconductor component is mounted; an intermediate element that is arranged between the support element of the semiconductor component and the mounting element; and a fastening element that secures the semiconductor component and the mounting element to the intermediate element.

Claims

[1] Semiconductor component (A1; A2) with: a first connection (1A); a first semiconductor element (3); and a sealing resin (7) covering at least one section of both the first terminal (1A) and the first semiconductor element (3), wherein the first terminal (1A) contains a first section (101A) of the first terminal (1A) which has: a front surface (111A) of the first terminal (1A) on which the first semiconductor element (3) is mounted; a rear surface (112A) of the first terminal (1A) opposite the front surface (111A) of the first terminal (1A); and a first surface (121A) of the first terminal (1A) located between the front surface (111A) of the first terminal (1A) and the rear surface (112A) of the first terminal (1A) in a thickness direction in which the front surface (111A) of the first terminal (1A) and the rear surface (112A) of the first terminal (1A) are separated from each other, and the first surface (121A) of the first connection (1A) is covered with the sealing resin (7) and is formed with a plurality of protruding areas (131A) and a plurality of recessed areas (132A) arranged alternately in the thickness direction, wherein a radius of curvature (R1) of each of the protruding areas (131A) is smaller than a radius of curvature (R2) of each of the recessed areas (132A). [2] Semiconductor component (A1; A2) according to claim 1, further comprising a support element (6) to which the rear surface (112A) of the first terminal (1A) is attached. [3] Semiconductor device (A1; A2) according to claim 2, wherein the sealing resin (7) has a front resin surface (71) facing the same side as the front surface (111A) of the first terminal (1A), a rear resin surface (72) facing the same side as the rear surface (112A) of the first terminal (1A), and a first resin surface (73) arranged between the front resin surface (71) and the rear resin surface (72) in the thickness direction and separated from the first surface (121A) of the first terminal (1A) in a first direction perpendicular to the thickness direction. [4] Semiconductor device (A1; A2) according to claim 3, wherein the first surface (121A) of the first terminal (1A) is closest to the surfaces of the first terminal (1A) of the first resin surface (73). [5] Semiconductor device (A1; A2) according to claim 4, wherein a terminal other than the first terminal (1A) is provided in a region which avoids a first region which is surrounded by the first surface (121A) of the first terminal (1A), the first resin surface (73) and a pair of first virtual lines (L1) which, viewed in the thickness direction, extend along a first direction from the respective ends of the first surface (121A) of the first terminal (1A) to the first resin surface (73). [6] Semiconductor component (A1; A2) according to claim 5, wherein the sealing resin (7) has a first resin recess (710) which is recessed from the first resin surface (73) in the direction of the first surface (121A) of the first terminal (1A), viewed in the thickness direction. [7] Semiconductor device (A1; A2) according to claim 6, wherein the first resin recess (710) surrounds the first area together with the first surface (121A) of the first terminal (1A), the first resin surface (73) and the pair of first virtual lines (L1), viewed in the thickness direction. [8] Semiconductor component (A1; A2) according to any one of claims 3 to 7, wherein the support element (6) has a front support element surface (61) facing the same side as the front surface (111A) of the first connection (1A) and to which the rear surface (112A) of the first connection (1A) is attached, a rear support element surface (62) facing one side opposite the front support element surface (61), and a first support element surface (63) arranged in the thickness direction between the front support element surface (61) and the rear support element surface (62), and wherein the first support element surface (63) is located in the thickness direction between the first surface (121A) of the first connection (1A) and the first resin surface (73). [9] Semiconductor component (A1; A2) according to any one of claims 3 to 8, wherein the first surface (121A) of the first terminal (1A) has a first area (1211A) of the first surface (121A) and a second area (1212A) of the first surface (121A) which lie next to each other in a thickness direction, and wherein the first area (1211A) of the first surface (121A) is rougher than the second area (1212A) of the first surface (121A). [10] Semiconductor device (A1; A2) according to claim 9, wherein the first region (1211A) of the first surface (121A) is closer to the front surface (111A) of the first terminal (1A) than the second region (1212A) of the first surface (121A). [11] Semiconductor device (A1; A2) according to claim 10, wherein the first terminal (1A) has a first projection (141A) arranged between the front surface (111A) of the first terminal (1A) and the first region (1211A) of the first surface (121A), and which projects from the front surface (111A) of the first terminal (1A) in the thickness direction. [12] Semiconductor component (A1; A2) according to claim 10 or 11, wherein the rear surface (112A) of the first terminal (1A) includes a first section (1121A) of the rear surface (112A) and a second section (1122A) of the rear surface (112A), wherein the first section (1121A) of the rear surface (112A) includes a section that overlaps with the first semiconductor element (3) in a thickness direction, wherein the second section (1122A) of the rear surface (112A) is surrounded by the first surface (121A) of the first terminal (1A) and a line segment (Ls1) that connects the bottoms of adjacent recessed areas (132A) in a thickness direction, and wherein the second section (1122A) of the rear surface (112A) is inclined in the first direction towards the front surface (111A) of the first connection (1A) with increasing distance from the first section (1121A) of the rear surface (112A). [13] Semiconductor component (A1; A2) according to claim 1, wherein the plurality of protruding areas (131A) and the plurality of recessed areas (132A) are provided over the entirety of the first surface (121A) of the first terminal (1A) in a thickness direction. [14] Semiconductor component (A1; A2) according to claim 1, further comprising: a second semiconductor element (4) for controlling the first semiconductor element (3); and a second terminal (2A) to which the second semiconductor element (4) is mounted, wherein a voltage applied to the first terminal (1A) is higher than a voltage applied to the second terminal (2A). [15] Semiconductor component (A1; A2) according to claim 14, wherein the second terminal (2A) has a first section (201A) of the second terminal (2A) to which the second semiconductor element (4) is mounted, and wherein the first section (201A) of the second connection (2A) is offset from the first section (101A) of the first connection (1A) in the thickness direction to one side which faces the front surface (111A) of the first connection (1A). [16] Semiconductor device (A1; A2) according to claim 14 or 15, wherein the first terminal (1A) and the second terminal (2A) are separated from each other in a second direction which is perpendicular to both the thickness direction and a first direction perpendicular to the thickness direction, the first connection (1A) has a second section (102A) of the first connection (1A) which projects from the sealing resin (7) to a side opposite the second connection (2A) in the second direction, and wherein the second connection (2A) has a second section (202A) of the second connection (2A) which protrudes from the sealing resin (7) to a side opposite the first connection (1A) in the second direction. [17] Mounting structure (B1) of a semiconductor device with: a semiconductor component (A1; A2) according to one of claims 1 to 16; a mounting element (81) on which the semiconductor component is mounted (A1; A2); an intermediate element (82) arranged between a support element (6) of the semiconductor component (A1; A2), to which the rear surface (112A) of the first terminal (1A) is attached, and the mounting element (81); and a fastening element (83) that secures the semiconductor component (A1; A2) and the mounting element (81) to the intermediate element (82).

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