SEMICONDUCTOR COMPONENT

Abstract

It is prevented that charge carriers flow from a diode region into an IGBT region during diode recovery, concentrate in a boundary portion, and thereby cause device breakage. In a semiconductor device having an IGBT region 4, a diode region 5, and a wiring region 6 on the same chip, the wiring region 6 has a gate runner 7 for supplying a gate potential to a trench gate electrode 20, a well layer 28 having a greater impurity diffusion depth than a trench 19, and a plurality of first contact regions 33 electrically connecting the well layer 28 and an emitter electrode 21, and an area of the first contact region 33 in a boundary region vicinity 10 near a boundary portion 9 between the IGBT region 4 and the diode region 5 is larger than an area of the first contact region 33 at a location remote from the boundary region vicinity 10. Position.

Claims

[1] A semiconductor device comprising an IGBT region, a diode region and a wiring region on the same chip, wherein an IGBT in the IGBT region has an emitter electrode provided on a front side, a collector electrode provided on a back side and a trench gate electrode provided in a trench, a diode in the diode region has a front electrode connected to the emitter electrode and a back electrode connected to the collector electrode, the wiring region comprises a gate runner for supplying a gate potential to the trench gate electrode, a well layer having a greater impurity diffusion depth than the trench, and a plurality of first contact regions electrically connecting the well layer and the emitter electrode, and an area of the first contact region in a boundary region vicinity near a boundary portion between the IGBT region and the diode region is larger than an area of the first contact region at a position remote from the boundary region vicinity. [2] A semiconductor device according to claim 1, wherein the area of the first contact region gradually increases in the vicinity of the boundary region toward the boundary portion. [3] A semiconductor device according to claim 1, wherein the wiring region comprises a first lead-out line connected to the gate runner and the trench gate electrode for leading a line from the trench gate electrode out of the trench, and the first lead-out line has first openings that are larger than the first contact areas at positions corresponding to the first contact areas. [4] A semiconductor device according to claim 1, wherein the wiring region has a plurality of second contact regions electrically connecting the well layer and the front side electrode, and an area of the second contact area in the vicinity of the boundary area is larger than an area of the second contact area at a position remote from the vicinity of the boundary area. [5] A semiconductor device according to claim 4, wherein the area of the second contact region gradually increases in the vicinity of the boundary region toward the boundary portion. [6] Semiconductor device according to claim 4, wherein the diode region has a trench electrode provided in the trench, the wiring region has a second lead-out line connected to the trench electrode for leading a line from the trench electrode out of the trench, and a third contact region electrically connecting the second lead-out line and the front-side electrode at a position different from the second contact regions, and the second lead-out line has second openings larger than the second contact areas at positions corresponding to the second contact areas.

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