SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
The semiconductor device addresses heat dissipation challenges by using a conductive member with a protruding portion and a thermally conductive insulating member, achieving improved heat dissipation and insulation.
Patent Information
- Application Number
- DE112023004544
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-01-27
- Publication Date
- 2025-08-21
AI Technical Summary
Existing semiconductor devices face challenges in effectively dissipating heat generated during operation, particularly when large currents are involved, and there is a need for improved cooling mechanisms.
The semiconductor device incorporates a semiconductor element sealed with a sealing resin, a conductive member with a protruding portion connected to the main electrode, a signal terminal joined to the signal electrode, and a thermally conductive insulating member between the conductive member and the signal terminal, featuring recessed portions to enhance heat dissipation and insulation.
This configuration improves heat dissipation performance and insulation properties, enhancing the reliability and productivity of the semiconductor device.
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Abstract
Description
Technical area
[0001] The present invention relates to a semiconductor device and a power conversion device. State of the art
[0002] A semiconductor cannot avoid the generation of heat associated with its operation, and a sufficient cooling mechanism is required, especially in a case where a large current flows. Patent 1 discloses a semiconductor device including a semiconductor element having a main electrode and a signal pad, a sealing body with which the semiconductor element is sealed, a conductive member connected to the main electrode of the semiconductor element within the sealing body and exposed on a surface of the sealing body, a signal terminal having one end joined to the signal pad of the semiconductor element within the sealing body via a joining layer and the other end protruding from the sealing body, and a support member provided on the conductive member within the sealing body and supporting the signal terminal.The signal connector comprises a constricted section with a cross-sectional area that decreases locally along its longitudinal direction. The support member is in contact with a section between one end of the signal connector and the constricted section. The support member is made of a material with insulating properties and a thermal conductivity higher than that of the material forming the sealing body. Citation listPatent literature
[0003] PTL 1: JP 2020-096085 A Summary of the inventionTechnical problem
[0004] In the invention described in PTL 1, there is room for improvement in cooling the semiconductor in the semiconductor device. Solution to the problem
[0005] A semiconductor device according to a first aspect of the present invention comprises a semiconductor element having a main electrode and a signal electrode, a sealing resin with which the semiconductor element is sealed, a conductive member having a protruding portion protruding from a lower surface facing the semiconductor element and connected to the main electrode, a signal terminal having one end joined to the signal electrode of the semiconductor element via a joining material and the other end extending outside the sealing resin, the signal terminal comprising a body portion facing the lower surface of the conductive member and a body portion side surface facing a side surface of the protruding portion, and a thermally conductive insulating member disposed between the conductive member and the signal terminal.wherein the conductive component and the signal terminal comprise a recessed portion between the lower surface of the conductive component and the protruding portion and / or between the body portion and the body portion side surface.,
[0006] A power conversion device according to a second aspect of the present invention comprises the semiconductor device described above and a main conversion circuit that converts and outputs input power. Advantageous effects of the invention
[0007] According to the present invention, heat dissipation performance and insulation properties of the semiconductor device can be improved. Brief description of the drawings [ Fig. 1] Fig. 1 is a circuit diagram of a semiconductor device. [ Fig. 2] Fig. 2 is a perspective view of the semiconductor device. [ Fig. 3] Fig. 3 is an exploded perspective view of the semiconductor device. [ Fig. 4] Fig. 4 is a cross-sectional view along the line IV-IV in Fig. 2. [ Fig. 5] Fig. 5 is a cross-sectional view taken along the line VV in Fig. 2. [ Fig. 6] Fig. 6 is an enlarged view of part C in Fig. 5. [ Fig. 7] Fig. 7 is an external view of a second conductive component. [ Fig. 8] Fig. 8 is an enlarged view of a part C in a first modification. [ Fig. 9] Fig. 9 is an enlarged view of part C in a second modification. [ Fig. 10] Fig. 10 is a diagram illustrating a power conversion device according to a third modification. Description of embodiments- Embodiments -
[0008] Embodiments of the semiconductor device with respect to Fig. 1 to 7 described.
[0009] Fig. 1 is a circuit diagram of a semiconductor device 300. The semiconductor device 300 includes a first element 200U, a second element 200L, a third element 210U, and a fourth element 210L, which are semiconductor elements. The first element 200U and the second element 200L are insulated gate bipolar transistors (IGBTs). The third element 210U and the fourth element 210L are diodes. Each of the first element 200U, the second element 200L, the third element 210U, and the fourth element 210L may be a field-effect transistor (FET) or the like. When using FETs, semiconductor elements using silicon carbide (SiC) may be used.
[0010] The semiconductor device 300 includes an upper arm 301 and a lower arm 302. The upper arm 200 includes the first element 200U, the third element 210U, a positive terminal 311, and a signal terminal 340. The lower arm 210 includes the second element 200L, the fourth element 210L, a negative terminal 312, and the signal terminal 340. The positive terminal 311 and the negative terminal 312 are connected to a capacitor or the like existing outside the semiconductor device 300, and supply electric power to the semiconductor device 300 from the outside.
[0011] The signal terminal 340 is connected to a control board and controls a switching operation of the first element 200U and the second element 200L. The semiconductor device 300 includes an alternating current (AC) terminal 313 and an interconnection portion 303. The interconnection portion 303 electrically connects the upper arm 301 and the lower arm 302. The interconnection portion 303 is electrically connected to the AC terminal 313. The AC terminal 313 outputs an electric current to the outside of the semiconductor device 300. It should be noted that the Fig. 1 has a 2-in-1 configuration with two sets of insulated gate bipolar transistors (IGBTs) and diodes, but may have a 1-in-1 configuration with only one set of IGBT and diode.
[0012] Fig. 2 is a perspective view of the semiconductor device 300. In Fig. In Figure 2 and the subsequent figures, mutually orthogonal XYZ axes are defined to clarify the correlation of the drawings. The upper branch 301 and the lower branch 302 of the semiconductor device 300 are arranged side by side in the Y-axis direction. Specifically, the upper branch 301 is arranged on the plus side of the Y-axis, and the lower branch 302 is arranged on the minus side of the Y-axis. Many components of the semiconductor device 300 are sealed with a sealing resin 380. One ends of the positive terminal 311, the negative terminal 312, the AC terminal 313, and the signal terminal 340 are exposed from the sealing resin 380.
[0013] Fig. 3 is an exploded perspective view of the semiconductor device 300. In Fig. 3, however, the sealing resin 380 covering most of the semiconductor device 300 is excluded. The focus of Fig. 3 is similar to that of Fig. 2. The semiconductor device 300 includes two first conductive components 320, shown in the lower part of the drawing, and two second conductive components 330, shown in the upper part of the drawing. One set of the first conductive component 320 and the second conductive component 330 is required as a constituent component of each of the upper branch 301 and the lower branch 302. When the semiconductor device 300 has the 1-in-1 configuration with only one of the upper branch 301 and the lower branch 302, the semiconductor device 300 includes only one set of the first conductive component 320 and the second conductive component 330.
[0014] The first element 200U and the third element 210U are inserted between the first conductive component 320 and the second conductive component 330, which form the upper branch 301. The second element 200L and the fourth element 210L are inserted between the first conductive component 320 and the second conductive component 330, which form the lower branch 302.
[0015] Each of the first element 200U and the second element 200L includes a first main electrode 201, a second main electrode 202, and a signal electrode 203. Each of the third element 210U and the fourth element 210L includes a third main electrode 211 and a fourth main electrode 212. The first main electrode 201 and the third main electrode 211 are joined to the first conductive member 320 using a first joining material 350. The second main electrode 202 and the fourth main electrode 212 are joined to the second conductive member 330 using a second joining material 351. The signal electrode 203 is joined to the signal terminal 340 using a third joining material 352.
[0016] The positive terminal 311 is connected to the first conductive component 320, which forms the upper branch 301, shown on the plus side of the Y-axis. The AC terminal 313 is connected to the first conductive component 320, which forms the lower branch 302, shown on the minus side of the Y-axis. The negative terminal 312 is arranged in a position near the first conductive component 320, which forms the lower branch 302, and includes a negative terminal connecting portion 316 on a side near the first conductive component 320. The AC terminal 313 includes an intermediate terminal 317.
[0017] The intermediate terminal 317 is arranged to extend toward the upper branch 301. The second conductive member 330 includes a terminal connecting portion 332. The negative terminal connecting portion 316 is joined to the terminal connecting portion 332 of the second conductive member 330, which forms the lower branch 302, using a fourth joining material 353. The intermediate terminal 317 is joined to the terminal connecting portion 332 of the second conductive member 330, which forms the upper branch 301, using a fifth joining material 354.
[0018] Each of the first joining material 350, the second joining material 351, the third joining material 352, the fourth joining material 353, and the fifth joining material 354 is a solder or a sintered material. The first joining material 350, the second joining material 351, the third joining material 352, the fourth joining material 353, and the fifth joining material 354 may have the same composition or different compositions. The first conductive member 320 and the second conductive member 330 may be a metal plate made of copper, aluminum, or the like, or may be an insulating substrate having a wiring layer and an insulating layer.
[0019] The signal terminal 340 is bonded to the second conductive member 330 via a thermally conductive insulating member 360. The thermally conductive insulating member 360 is a resin with a bonding force. The resin contains a thermally conductive filler to increase the thermal conductivity between the signal terminal 340 and the thermally conductive insulating member 360. The thermally conductive insulating member 360 is preferably formed in a plate shape so that it is easy to handle. The thermally conductive insulating member 360 is bonded to the signal terminal 340 and the second conductive member 330 by applying pressure thereto in a state of close contact. Voids at a bonding interface are reduced by applying pressure for bonding, and insulation performance and heat dissipation performance are improved.
[0020] Fig. 4 is a cross-sectional view along the line IV-IV in Fig. 2. In Fig. 4, however, the scale in the Z-axis direction is different from that in other drawings for the convenience of illustration. In Fig. 4, a front side in the drawing is the plus direction of an X-axis, a right side is the plus direction of the Y-axis, and a top side is the plus direction of the Z-axis. Since the first element 200U and the third element 210U, which form the upper branch 301, are arranged side by side in the X-axis direction, they overlap with each other from the viewpoint of Fig. 4. Since the second element 200L and the fourth element 210L constituting the lower branch 302 are arranged side by side in the X-axis direction, they also overlap with each other from the viewpoint of Fig. 4.
[0021] The first conductive component 320 is joined to the first joining material 350 on the plus side of the Z-axis. A surface of the first conductive component 320 opposite to the first joining material 350, that is, a surface on the minus side of the Z-axis, is referred to as the first heat dissipation surface 321. The first heat dissipation surface 321 is exposed from the sealing resin 380. The second conductive component 330 is joined to the second joining material 351 on the minus side of the Z-axis. A surface of the second conductive component 330 opposite to the second joining material 351, that is, a surface on the plus side of the Z-axis, is referred to as the second heat dissipation surface 331. The second heat dissipation surface 331 is exposed from the sealing resin 380.
[0022] Since the first heat dissipation surface 321 and the second heat dissipation surface 331 are thermally connected to a cooler (not shown) via an insulation member, heat generated by the first element 200U, the second element 200L, the third element 210U, and the fourth element 210L is dissipated. For example, the thermally conductive insulation material and the cooler may be attached to the surfaces of the first heat dissipation surface 321 and the second heat dissipation surface 331. For example, the thermally conductive insulation material may be attached to the surfaces of the first heat dissipation surface 321 and the second heat dissipation surface 331 and thermally connected to the cooler via a thermally conductive material such as grease.
[0023] Fig. 5 is a cross-sectional view taken along the line VV in Fig. 2. In Fig. 5, a right side in the drawing is the plus direction of the X-axis, a far side is the plus direction of the Y-axis, and a top side is the plus direction of the Z-axis. A part that protrudes from the second conductive member 330 in the minus direction of the Z-axis is referred to as a protruding portion 338, and a configuration that excludes the protruding portion 338 from the second conductive member 330 is referred to as a base portion 330B. A side surface of the protruding portion 338 is referred to as a protruding portion side surface 337, and an end surface of the base portion 330B on the minus side of the Z-axis is referred to as a base portion bottom surface 333. The central position of the protruding portion 338 on the X-axis is referred to as the base center 335. The protruding portion side surface 337 is parallel to the Z-axis.
[0024] The second conductive member 330 includes a recessed portion 334, which is a notch, at a position that is a base of the protruding portion 338 and where the signal terminal 340 is arranged, and a position that is symmetrical to the position at the base of the protruding portion with respect to the base center 335. The base of the protruding portion 338 is a position where the side surface 337 of the protruding portion and the bottom surface 333 of the base portion intersect each other. The second conductive member 330 can be manufactured by various methods, but the notch and the protrusion are desirably formed by drawing or extrusion to improve productivity.In this case, as described above, providing the recessed portion 334 in the symmetrical position with respect to the base center 335 as a central line eliminates uneven application of force to the second conductive member 330, and thus facilitates production. Note that the essential configuration does not include the state that the recessed portion 334 exists in the symmetrical position with respect to the base center 335 as a central line. The recessed portion 334 on the side where the signal terminal 340 exists is essential, but the recessed portion 334 on the opposite side, that is, on the right side in FIG. Fig. 5, cannot exist.
[0025] The one in the lower part of Fig. The box shown in Figure 5 is an enlarged view of the vicinity of the end portion of the base portion 330B on the minus side of the X-axis. The thermally conductive insulating member 360 is bonded to the bottom surface 333 of the base portion. An end portion 362 of the thermally conductive insulating member 360 on the minus side of the X-axis is bonded without protruding from the side surface 336 of the conductive member. In other words, when the semiconductor device 300 is viewed from the plus side of the Z-axis, the thermally conductive insulating member 360 cannot be visually recognized even if the sealing resin 380 is not present. Eliminating the protrusion of the thermally conductive insulation member 360 can reduce damage to the thermally conductive insulation member 360 and facilitate handling at the time of manufacturing the semiconductor device 300, and thus improve the productivity of the semiconductor device 300.
[0026] The signal terminal 340 includes a terminal body portion 344, a first bent portion 342, a second bent portion 343, a low-rigidity portion 341, and a terminal portion 345. The terminal body portion 344 is bonded to the thermally conductive insulation member 360. The second bent portion 343 is formed on an inner side of the end portion 362 of the thermally conductive insulation member 360, that is, on the plus side of the X-axis in Fig. 5. If the positions of the end portion 362 and the second bent portion 343 are the same in the X-axis direction, the insulation properties are difficult to reliably ensure. Therefore, the insulation properties are improved by disposing the second bent portion 343 on the inner side of the end portion 362.
[0027] The terminal portion 345 is exposed from the sealing resin 380. The first bent portion 342 is disposed between the terminal portion 345 and the second bent portion 343. The first bent portion 342 is bent so that the terminal portion 345 is substantially flush with the positive terminal 311, the negative terminal 312, and the AC terminal 313. Hereinafter, a portion of the signal terminal 340 of the first bent portion 342 on the left side in the drawing and on the inside of the sealing resin 380 is referred to as the first portion 340X, and a portion of the signal terminal 340 outside the sealing resin 380 is referred to as the second portion 340Y.Since the terminal portion 345 is substantially flush with the positive terminal 311, the negative terminal 312, and the AC terminal 313, a mold used for sealing with the sealing resin 380 can be simplified, and productivity can be improved. The low-rigidity portion 341 is disposed between the first bent portion 342 and the terminal portion 345. The low-rigidity portion 341 is sealed with the sealing resin 380. The low-rigidity portion 341 has a lower rigidity than those of the terminal portion 345 and the second bent portion 343.
[0028] When the terminal portion 345 is pressed with a metal mold for sealing with the sealing resin 380, the low-rigidity portion 341 receives stress to reduce the stress applied to the bonding part of the thermally conductive insulation member 360 of the second bent portion 343. Consequently, the reliability of the semiconductor device 300 can be improved. Since the low-rigidity portion 341 is sealed with the sealing resin 380, the stress applied to the low-rigidity portion 341 when an external force is applied to the terminal portion 345 can be reduced, and the reliability of the semiconductor device 300 can be improved.
[0029] Fig. 6 is an enlarged view of part C in Fig. 5. The perspective of Fig. 6 is equal to that of Fig. 5. The terminal body portion 344 includes a protruding portion 347 in a position facing the signal electrode 203. The protruding portion 347 is joined to the signal electrode 203 using the third joining material 352. The heat generated by the first member 200U and the second member 200L is transferred from the lower part to the upper part in the drawing as follows. That is, the heat is transferred from the signal electrodes 203 of the first member 200U and the second member 200L to the protruding portion 347, the terminal body portion 344 of the signal terminal 340, the thermally conductive insulation member 360, and the bottom surface 333 of the base portion.
[0030] The protruding portion 347 includes a protruding portion side surface 348. The protruding portion side surface 348 is inclined to spread toward the bottom surface 333 of the base portion. Because the protruding portion side surface 348 is inclined, heat spreads easily, and thus, heat dissipation properties are improved. The shape of the protruding portion 347 will be described below without using the protruding portion side surface 348. That is, the protruding portion 347, which protrudes toward the signal electrode 203 in the signal terminal 340, has a shape that tapers toward the signal electrode 203.
[0031] If the position of the protruding portion 347 deviates from the signal electrode 203, an accidental short circuit or the like occurs, which is not preferable. However, if excessive strictness is required for the position of the protruding portion 347, the productivity of the semiconductor device 300 deteriorates. Therefore, by reducing the area of the tip of the protruding portion 347 on the signal electrode 203 side, the positional accuracy required for the protruding portion 347 is relaxed and the productivity of the semiconductor device 300 is improved. However, since the thermal resistance increases when the protruding portion 347 is lengthened, an increase in the thermal resistance on the plus side of the Z-axis is prevented by increasing the cross-sectional area of an XY plane, and smooth heat energy transfer is achieved.
[0032] The thermally conductive insulation member 360 includes a base heat transfer portion 365 extending in the X-axis direction in the drawing, a side heat transfer portion 364 extending in the Z-axis direction in the drawing, and a thermally conductive member bent portion 363 at a corner portion. The thermally conductive member bent portion 363 may also be referred to as a region sandwiched between the base heat transfer portion 365 and the side heat transfer portion 364. The thermally conductive member bent portion 363, the side heat transfer portion 364, and the base heat transfer portion 365 are integrally formed. The side surface 337 of the protruding portion is bonded to a right side surface 344R of the body portion using the side heat transfer portion 364.Since the side surface 337 of the protruding portion is bonded to the right side surface 344R of the body portion, the heat dissipation properties are improved. Positioning of the signal terminal 340 is facilitated by abutting the right side surface 344R of the body portion against the right side surface 344R of the body portion.
[0033] The length of the side heat transfer portion 364 in the Z-axis direction is set so that it does not come into contact with the second joining material 351. A load σy is applied to the base heat transfer portion 365 of the thermally conductive insulation member 360 to bond the base heat transfer portion 365 to the bottom surface 333 of the base portion. A load σx is applied to the side heat transfer portion 364 of the thermally conductive insulation member 360 to bond the side heat transfer portion 364 to the side surface 337 of the protruding portion.
[0034] Because the bent portion 363 of the thermally conductive member is bent, it is generally more susceptible to external forces than the side heat transfer portion 364 and the base heat transfer portion 365. When the bent portion 363 of the thermally conductive member receives external forces, the insulation performance may deteriorate. The recessed portion 334 is provided as a countermeasure against the above situation. This prevents the second conductive member 330 from coming into contact with the bent portion 363 of the thermally conductive member, thus ensuring insulation.
[0035] Fig. 7 is an external view of the second conductive member 330. Fig. 7, however, has a viewpoint that differs from that of Fig. 3 and represents a surface on the minus side of the Z-axis, which is Fig. 3 is hidden. The protruding portions 338, which protrude toward the minus side of the Z-axis, are arranged side by side in the X-axis direction. The recessed portions 334 exist along the entire width of the second conductive member 330 in the Y-axis direction at the ends of the protruding portions 338 on the plus side of the X-axis and on the minus side of the X-axis, respectively. Therefore, the recessed portions 334 can be easily processed by drawing or extrusion. Since the Y-axis direction in which the recessed portions 334 extend is orthogonal to the X-axis direction in which the signal terminal 340 extends, a flat surface can be easily formed on the bottom surface 333 of the base portion, and the thermally conductive insulation member 360 can be easily attached.
[0036] According to the embodiment described above, the following functional effects can be obtained. (1) The semiconductor device 300 includes the first element 200U having the first main electrode 201, the second main electrode 202, and the signal electrode 203, the sealing resin 380 with which the first element 200U is sealed, the second conductive member 330 having the protruding portion 338 protruding from the base portion 330B facing the first element 200U and connected to the first main electrode 201, the signal terminal 340 having one end joined to the signal electrode 203 of the semiconductor element via the joining material and the other end extending outside the sealing resin 380, wherein the signal terminal 340 includes the terminal body portion 344 facing the bottom surface 333 of the base portion as the bottom surface of the second conductive member 330, and the right side surface 344R of the body part,which faces the side surface 337 of the protruding portion as the side surface of the protruding portion 338, and the thermally conductive insulation member 360 disposed between the second conductive member 330 and the signal terminal 340. The second conductive member 330 and the signal terminal 340 include the recessed portion 334 between the bottom surface 333 of the base portion and the protruding portion 338. Therefore, the heat dissipation performance and insulation properties can be improved. In particular, the signal electrode 203 and the signal terminal 340 are thermally connected to the second conductive member 330 via the thermally conductive insulation member 360. Heat is dissipated from the signal terminal 340 to the second conductive member 330, and the heat dissipation properties are improved by creating a heat dissipation path. Since the recessed portion 334 is provided in a positionin which the thermally conductive insulation component 360 is bent, the insulation is further improved. (2) The signal terminal 340 includes the first region 340X sealed with the sealing resin 380 and the second region 340Y extending outside the sealing resin 380. The low-rigidity portion 341, which is lower in rigidity than the other parts of the first region 340X, is formed in the first region 340X of the signal terminal 340. Therefore, when sealing is performed using the sealing resin 380, stress is less likely to be applied to the bonding interface between the thermally conductive insulation member 360 and the signal terminal 340. Consequently, peeling can be suppressed, and productivity is improved. (3) The thermally conductive insulation member 360 is disposed within the periphery of the second conductive member 330 as viewed from the direction in which the protruding portion 338 protrudes, that is, from the Z-axis direction. Therefore, the thermally conductive insulation member 360 is prevented from being broken during the manufacturing of the semiconductor device 300, and the productivity of the semiconductor device 300 is improved. (4) The second conductive member 330 includes the terminal portion 345 extending outside the sealing resin 380. The terminal portion 345 is arranged to be flush with the second region 340Y. Therefore, the shape of the sealing resin 380 can be simplified, and the productivity of the semiconductor device 300 is improved. (5) The recessed portion 334 is formed symmetrically with respect to the protruding portion 338. Therefore, press-molding of the recessed portion 334 is facilitated, and the productivity of the semiconductor device 300 is improved. (6) The recessed portion 334 extends in a direction perpendicular to the extending direction of the signal terminal 340. Therefore, the recessed portion 334 can be formed by extrusion molding or drawing, and the productivity of the semiconductor device 300 is improved. (7) The terminal body portion 344 includes the protruding portion 347 directed toward the signal electrode 203, and the protruding portion 347 has an inclination that spreads from the signal electrode 203 to the terminal body portion 344. Therefore, the heat dissipation properties are improved. (First variation)
[0037] Fig. 8 is an enlarged view of a part C in a first modification. Fig. 8 corresponds to Fig. 6 in the embodiment. In the first modification, the right side surface 344R of the body portion and the side surface 337 of the protruding portion have inclined surfaces. In other words, in the above-described embodiment, the right side surface 344R of the body portion and the side surface 337 of the protruding portion are parallel to the Z axis, but the right side surface 344R of the body portion and the side surface 337 of the protruding portion in the present modification are not parallel to the Z axis. In the present modification, since the side surface 337 of the protruding portion is inclined, when a load σ0 is applied, a load σ1 for bonding the thermally conductive insulation member 360 can also be generated on the side surface 337A of the protruding portion, and thus productivity is improved. The inclination angle θ is preferably 135° or more.When the inclination angle θ is large, σ1 increases, and the thermally conductive insulation member 360 is easily bonded.
[0038] The recessed portion 334A in the present modification includes a recessed portion side surface 392A. The recessed portion side surface 392A is inclined. This inclination facilitates drawing and extrusion processing, thus improving productivity. Other shapes are similar to those of the embodiment.
[0039] In the above-described modification, the following functional effects can be obtained in addition to the functional effects in the above-described embodiment.
[0040] (8) The body portion side surface is inclined so that it approaches the main electrode from the body portion. Therefore, the heat from the signal electrode 203 spreads easily, and the heat dissipation performance is improved.
[0041] (9) The angle of the body portion side surface with respect to the body portion is 135 degrees or more. Therefore, a load for bonding the thermally conductive insulation member 360 increases, and the bonding of the thermally conductive insulation member 360 becomes easy. (Second variation)
[0042] Fig. 9 is an enlarged view of part C in a second modification. Fig. 9 corresponds to Fig. 6 in the embodiment. In the above-described embodiment, the recessed portion 334 is provided at the intersection of the protruding portion 338 and the bottom surface 333 of the base portion. However, in the present modification, the terminal body portion 344 includes a terminal recessed portion 346B. The terminal recessed portion 346B is arranged in a position where the bent portion 363 of the thermally conductive member avoids the terminal body portion 344. That is, the terminal recessed portion 346B is provided on the opposite side of the bent portion 363 of the thermally conductive member from the recessed portion 334. Therefore, providing the terminal recessed portion 346B instead of the recessed portion 334 can improve the insulation performance as in the embodiment. Other parts of the structure are similar to those of the embodiment.
[0043] Note that, although the recessed portion 334 is provided in the embodiment and the terminal recessed portion 346B is provided in the second modification, the semiconductor device 300 may include the recessed portion 334 and / or the terminal recessed portion 346B. That is, the semiconductor device 300 may include both the recessed portion 334 and the terminal recessed portion 346B. (Third variation)
[0044] Fig. 10 is a diagram illustrating a power conversion device 1 according to a third modification. The power conversion device 1 includes three semiconductor devices 300, a film capacitor group 3G for voltage conversion, and a control board 7. Fig. 10 is a circuit diagram of the power conversion device 1. The power conversion device 1 mutually converts direct current (DC) power and AC power. The power conversion device 1 can convert DC power supplied from a high-voltage battery 2 into AC power and supply the AC power to a motor generator MG, or can convert AC power supplied from the motor generator MG into DC power and supply the DC power to the high-voltage battery 2. The high-voltage battery 2 is a secondary battery such as a lithium-ion battery or a nickel-hydrogen battery.
[0045] The motor generator MG outputs driving power of a hybrid electric vehicle (HEV) or an electric vehicle (EV) using AC power. Furthermore, the motor generator MG also acts as a generator that regenerates AC power for the high-voltage battery 2 at a time when the engine is rotated by an external force. The motor generator MG is, for example, a three-phase motor with a Y connection, as shown in Fig. 1 shown.
[0046] The film capacitor group 3G is formed by arranging a plurality of film capacitors 3 in a resin package, sealing the resin package with resin, and forming a module. The film capacitor group 3G performs smoothing when converting DC power to AC power. Each of the semiconductor devices 300 converts DC power of the high-voltage battery 2 into three-phase AC power by controlling the on / off timing of switching elements forming a U-phase arm, a V-phase arm, and a W-phase arm. The control board 7 includes a microcomputer that performs arithmetic processing. The control board 7 generates a gate pulse signal based on input information from a host controller 10 and outputs the gate pulse signal to each of the semiconductor devices 300.
[0047] According to the present modification, the following functional effects can be obtained.
[0048] (10) The power conversion device 1 includes the semiconductor devices 300 and the control board 7 that controls the semiconductor devices 300. Therefore, the power conversion device 1 including the semiconductor devices 300 with excellent heat dissipation performance and insulation properties can be provided. Note that the power conversion device 1 may include only one semiconductor device 300 to support a single phase.
[0049] The above-described embodiment and modifications can be combined. Although various embodiments and modifications have been described above, the present invention is not limited to these contents. Other aspects conceivable within the scope of the technical idea of the present invention are also included within the scope of the present invention. List of reference symbols 1 power conversion device 7 Control board 200U first element 201 first main electrode 203 Signal electrode 300 semiconductor devices 330 second conductive component 330B Base Section 331 second heat dissipation surface 332 Connection section 333 lower surface of the base section 334, 334A deepened section 335 Base Center 336 Side surface of the conductive component 337, 337A Side surface of the protruding portion 338 preceding section 340 signal connection 341 Low stiffness section 342 first curved section 343 second curved section 344 connecting body section 344R right side surface of the body section 345 connecting section 346B recessed connection section 347 protruding section 348 Side surface of the projecting portion 360 thermally conductive insulation component 363 bent section of the thermally conductive component 380 sealing resin 392A Side surface of the recessed section QUOTES CONTAINED IN THE DESCRIPTION
[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature
[0000] JP 2020-096085 A
[0003]
Claims
[1] Semiconductor device comprising: a semiconductor element having a main electrode and a signal electrode; a sealing resin with which the semiconductor element is sealed; a conductive member having a protruding portion protruding from a lower surface facing the semiconductor element and connected to the main electrode; a signal terminal having one end joined to the signal electrode of the semiconductor element via a joining material and the other end extending outside the sealing resin, the signal terminal comprising a body portion facing the lower surface of the conductive member and a body portion side surface facing a side surface of the projecting portion; and a thermally conductive insulation component arranged between the conductive component and the signal connection, wherein the conductive member and the signal terminal include a recessed portion between the bottom surface of the conductive member and the protruding portion and / or between the body portion and the body portion side surface. [2] A semiconductor device according to claim 1, wherein the signal terminal comprises a first region sealed with the sealing resin and a second region extending outside the sealing resin, and the first region comprises a low-stiffness section whose stiffness is lower than other parts of the first region. [3] The semiconductor device according to claim 1, wherein the thermally conductive insulating member is arranged within a periphery of the conductive member when viewed from a direction in which the projecting portion projects. [4] A semiconductor device according to claim 2, wherein the conductive component comprises a main terminal portion extending outside the sealing resin, and the main connection section is arranged so that it is flush with the second area. [5] The semiconductor device according to claim 1, wherein the recessed portion is formed symmetrically with respect to the projecting portion. [6] The semiconductor device according to claim 1, wherein the recessed portion extends in a direction perpendicular to an extending direction of the signal terminal. [7] A semiconductor device according to claim 1, wherein the body portion comprises a projecting portion projecting toward the signal electrode, and the projecting portion has an inclination extending from the signal electrode to the body portion. [8] The semiconductor device according to claim 1, wherein the body portion side surface is inclined to approach the main electrode from the body portion. [9] The semiconductor device according to claim 1, wherein the body portion side surface has an angle of 135 degrees or more with respect to the body portion. [10] Power conversion device comprising: the semiconductor device according to claim 1; and a main conversion circuit that converts and outputs input power.
Citation Information
Patent Citations
Semiconductor device
JP2020096085A