SEMICONDUCTOR COMPONENT

Abstract

A semiconductor device comprising a first die pad, a second die pad, a first support conductor, a second support conductor, and a sealing resin. The first support conductor and the second support conductor are spaced apart from two first side faces of the sealing resin and are exposed outwards from a second side face of the sealing resin. The first support conductor has a first inner section covered by the sealing resin and a first outer section connected to the first inner section. Viewed from a third direction, the first inner section has a first section extending from a boundary defined by an extension line of a first edge of the first die pad to the first die pad. The cross-sectional area of ​​the first section in its extension direction is larger than that of the first outer section in its extension direction.

Description

TECHNICAL AREA

[0001] The present disclosure relates to semiconductor devices. BACKGROUND

[0002] The semiconductor device disclosed in patent document 1 has two die pads, a control element, and a gate driver. The control element and the gate driver are each mounted individually on the two die pads. The semiconductor device controls switching elements such as IGBTs and MOSFETs. The semiconductor device is used, for example, in an inverter circuit.

[0003] In the semiconductor device mentioned above, the supply voltage to the control element is higher than the voltage to the switching element, and the supply voltage to the control element differs from the supply voltage to the control element. Therefore, the voltage applied to the control element and its conduction path differs from the voltage applied to the control element and its conduction path. In this semiconductor device, an insulating element is inserted into the electrical signal transmission path between the control element and the control element. This isolates the control element and its conduction path from the control element and its conduction path, preventing electrical damage to both.

[0004] The semiconductor device described above has two support conductors connected to the die pad on which the control element and the insulating element are mounted, a plurality of intermediate conductors connected to the control element, and a sealing resin. The sealing resin covers the two die pads, the control element, the drive element, and the insulating element. The two support conductors and the plurality of intermediate conductors are exposed on the same side of the sealing resin. During the manufacturing process of the semiconductor device, the die pad connected to the two support conductors is subjected to stresses, such as those from a bonding tool. As a result, bending forces act on each support conductor, causing it to deflect in the direction of the load. If the deflection of each support conductor is large, the tilt of the die pad connected to the support conductors can become significant.This can reduce the bond strength between the control / insulating elements and the die pad, or cause poor bonding of the wires connected to these elements. DOCUMENTS ON THE STATE OF THE TECHNOLOGY Patent document

[0005] PATENT DOCUMENT 1: JP-A-2016-207714 (JP 2016- 207714 A) SUMMARY OF THE INVENTIONAL TASKS THAT THE INVENTION IS INTENDED TO SOLVE.

[0006] The present disclosure provides semiconductor devices that are improved compared to conventional devices. In particular, considering the circumstances mentioned above, the present disclosure provides semiconductor devices that are configured to stabilize the position of the die pad during manufacturing. MEANS FOR SOLVING THE TASK

[0007] According to a first aspect of the present disclosure, a semiconductor device is provided comprising: a first die pad; a first support conductor connected to one side of the first die pad in a first direction; a second support conductor opposite the first support conductor with respect to the first die pad and connected to the first die pad; a first semiconductor element mounted on the first die pad; and a sealing resin covering the first die pad and the first semiconductor element. The sealing resin has two first side faces radiating away from each other in the first direction and a second side face radiating in a second direction perpendicular to the first direction. Both the first and second support conductors are spaced apart from the two first side faces and are free to extend outwards from the second side face.The first support ladder has a first inner section covered by the sealing resin and a first outer section connected to the first inner section and exposed on the outside. The first die pad has a first edge extending in the first direction and closest to the second side face. In a third direction, perpendicular to the first and second directions, the first inner section has a first section extending from a boundary defined by the extension of the first edge to the first die pad. A cross-sectional area of ​​the first section in a direction in which the first section extends is larger than a cross-sectional area of ​​the first outer section in a direction in which the first outer section extends. ADVANTAGES OF THE INVENTION

[0008] The above-mentioned arrangements make it possible to stabilize the position of the die pad during the manufacturing of semiconductor devices.

[0009] Further features and advantages of the present disclosure will become clearer from the detailed description below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a top view of a semiconductor device according to a first embodiment of the present disclosure. Fig. 2 is a top view accordingly Fig. 1, wherein the sealing resin is transparent. Fig. 3 is a front view of the in Fig. 1 semiconductor device shown. Fig. 4 is a left side view of the in Fig. 1 semiconductor device shown. Fig. 5 is a right side view of the in Fig. 1 semiconductor device shown. Fig. Figure 6 is a cross-sectional view along line VI-VI in Fig. 2. Fig. Figure 7 is a cross-sectional view along line VII-VII in Fig. 2. Fig. Figure 8 is a cross-sectional view along line VIII-VIII in Fig. 2. Fig. Image 9 is a partially enlarged view of Fig. 2. Fig. 10A is a cross-sectional view along line XA-XA in Fig. 9. Fig. 10B is a cross-sectional view along the line XB-XB in Fig. 9. Fig. 10C is a cross-sectional view along the line XC-XC in Fig. 9. Fig. 11A is a cross-sectional view of the second inner section of the second support conductor in the direction in which it extends. Fig. Figure 11B is a cross-sectional view of the second outer section of the second support ladder in the direction in which it extends. Fig. 12A is a cross-sectional view of the third inner section of the third support conductor in the direction in which it extends. Fig. Figure 12B is a cross-sectional view of the third outer section of the third support ladder in the direction in which it extends. Fig. Figure 13 is a top view of the semiconductor device according to a second embodiment of the present disclosure. Fig. 14 is a top view accordingly Fig. 13, where the sealing resin is shown to be transparent. Fig. 15 is a rear view of the in Fig. 13 semiconductor components shown. Fig. 16 is a left side view of the in Fig. 13 semiconductor components shown. Fig. 17 is a top view of the ladder frame for the manufacture of the in Fig. 13 semiconductor components shown. Fig. 18 is a partially enlarged view of Fig. 14. Fig. 19A is a cross-sectional view along line XIXA-XIXA in Fig. 18. Fig. 19B is a cross-sectional view along line XIXB-XIXB in Fig. 18. Fig. 19C is a cross-sectional view along XIXC-XIXC in Fig. 18. Fig. Figure 20 is a top view of a semiconductor device according to a third embodiment of the present disclosure. Fig. 21 is a top view accordingly Fig. 20, where the sealing resin is shown transparently. Fig. 22 is a left side view of the in Fig. 20 semiconductor components shown. Fig. 23 is a right-side view of the in Fig. 20 semiconductor components shown. Fig. 24 is an enlarged view of a section of Fig. 21. Fig. 25A is a cross-sectional view along line XXVA-XXVA in Fig. 24. Fig. 25B is a cross-sectional view along the line XXVB-XXVB in Fig. 24. Fig. 25C is a cross-sectional view along the line XXVC-XXVC in Fig. 24. FORMS OF EXECUTION OF THE INVENTION

[0010] Embodiments as defined in this disclosure are explained below with reference to the accompanying drawings. FIRST VERSION:

[0011] With reference to the Fig. In Figures 1 to 12B, a semiconductor device A10 according to a first embodiment of the present disclosure is described. The semiconductor device A10 comprises a first semiconductor element 11, a second semiconductor element 12, an insulating element 13, a first die pad 21, a second die pad 22, a first support conductor 23, a second support conductor 24, a third support conductor 25, a fourth support conductor 26, a plurality of first intermediate conductors 31, a plurality of second intermediate conductors 32, and a sealing resin 50. Furthermore, the semiconductor device A10 comprises two outer conductors 27, a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43, and a plurality of fourth wires 44. The semiconductor device A10 can, for example, be surface-mounted on a printed circuit board of an inverter for an electric vehicle or a hybrid vehicle.The package of the semiconductor device A10 is a small outline package (SOP). However, the packaging type of the semiconductor device A10 is not limited to an SOP. For better understanding, see below. Fig. 2 the sealing resin 50 is shown transparently, and its outer shape is indicated by imaginary lines (two-dot dash lines).

[0012] In the description of the semiconductor device A10, a direction perpendicular to a normal direction of the first mounting surface 21A of the first die pad 21 is referred to as the "first direction x". A direction perpendicular to the first direction x is referred to as the "second direction y". The direction perpendicular to both the first direction x and the second direction y is referred to as the "third direction z". The third direction z corresponds to the normal direction of the first mounting surface 21A.

[0013] In semiconductor device A10, the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 are separate elements. The second semiconductor element 12 is located opposite the first semiconductor element 11 with respect to the insulating element 13 in the second y-direction. The insulating element 13 is located next to the first semiconductor element 11 in the first x-direction. Viewed in the third z-direction, the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 each have a rectangular shape with long sides extending in the first x-direction.

[0014] The first semiconductor element 11 controls the second semiconductor element 12. The first semiconductor element 11 contains a circuit for converting electrical signals input from other semiconductor elements into PWM control signals, a transmit circuit for transmitting the PWM control signals to the second semiconductor element 12, and a receive circuit for receiving electrical signals from the second semiconductor element 12.

[0015] The second semiconductor element 12 controls one or more switching elements located outside the semiconductor element A10. Such a switching element could be, for example, an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The second semiconductor element 12 contains a receiver circuit for receiving a PWM control signal, a circuit for controlling the switching elements based on the PWM control signal, and a transmitter circuit for transmitting an electrical signal to the first semiconductor element 11. The electrical signal could be, for example, a signal output by a temperature sensor near a motor.

[0016] The insulating element 13 is designed to transmit electrical signals, such as PWM (pulse width modulation) control signals, in an isolated state. The insulating element 13 can be an inductive coupling. An example of such an insulating element 13 is an isolating transformer. An isolating transformer transmits electrical signals in an isolated state by using two inductively coupled inductors (coils). The two inductors can be a transmitter-side and a receiver-side inductor. The two inductors can be stacked along the third direction z. A dielectric layer of silicon dioxide (SiO2) or a similar material is provided between the transmitter-side and receiver-side inductors. The dielectric layer electrically isolates the transmitter-side inductor from the receiver-side inductor. Alternatively, the insulating element 13 can also be capacitive.An example of a capacitive insulating element 13 is a capacitor.

[0017] The voltages applied to the first semiconductor element 11 and the second semiconductor element 12 are different. This can create a potential difference between the first semiconductor element 11 and the second semiconductor element 12. In semiconductor element A10, the voltage applied to the second semiconductor element 12 is higher than the voltage applied to the first semiconductor element 11. Furthermore, the supply voltage to the second semiconductor element 12 is higher than the supply voltage to the first semiconductor element 11.

[0018] The semiconductor device A10 comprises a first circuit with the first semiconductor element 11 and a second circuit with the second semiconductor element 12, the two circuits being isolated from each other by the insulating element 13. The insulating element 13 is electrically connected to both the first and second circuits. In addition to the first semiconductor element 11, the first circuit comprises the first support conductor 23, the second support conductor 24, and a plurality of first intermediate conductors 31. The second circuit comprises the second die pad 22, a third support conductor 25, a fourth support conductor 26, and a plurality of second intermediate conductors 32. The first and second circuits are held at different potentials. In the semiconductor device A10, the potential of the first circuit is higher than that of the second circuit. The insulating element 13 conducts signals between the first and second circuits.For example, in an inverter of an electric or hybrid vehicle, the voltage applied to ground (GND) of the first semiconductor element 11 is approximately 0 V, while the voltage applied to ground of the second semiconductor element 12 can temporarily exceed 600 V.

[0019] As in the Fig. 2 and Fig. As shown in Figure 6, the first semiconductor element 11 has a plurality of first electrodes 111. The multiple first electrodes 111 are located on the top surface of the first semiconductor element 11 (the surface facing the same side as the first mounting surface 21A of the first die pad 21, described later). The plurality of first electrodes 111 can be made of a material such as aluminum (Al). The multiple first electrodes 111 are electrically connected to the circuit formed in the first semiconductor element 11.

[0020] As in the Fig. 2 and Fig. As shown in Figure 6, the second semiconductor element 12 has a plurality of second electrodes 121. The multiple second electrodes 121 are located on the top surface of the second semiconductor element 12 (the surface facing the same side as the second mounting surface 22A of the second die pad 22, described later). The plurality of second electrodes 121 can be made of a material such as aluminum. The plurality of second electrodes 121 are electrically connected to the circuit formed in the second semiconductor element 12.

[0021] As in the Fig. 2 and Fig. As shown in Figure 6, the insulating element 13 is located in the third direction z between the second semiconductor element 12 and the first semiconductor element 11. The first semiconductor element 11 is opposite the second semiconductor element 12 with respect to the insulating element 13 in the second direction y. A plurality of third electrodes 131 and a plurality of fourth electrodes 132 are provided on the top surface of the insulating element 13 (the surface facing the same side as the first mounting surface 21A of the first die pad 21, described later). The third electrodes 131 and the fourth electrodes 132 are electrically connected to either the transmitter-side inductor or the receiver-side inductor. The third electrodes 131 are arranged along the first direction x and are located between the first semiconductor element 11 and the second semiconductor element 12 in the second direction y.The fourth electrodes 132 are arranged along the first direction x and, with respect to the third electrodes 131, are positioned away from the first semiconductor element 11 in the second direction y. The third electrodes 131 and the fourth electrodes 132 can be made of a material such as aluminum.

[0022] As in Fig. As shown in Figure 1, the sealing resin 50 covers the first semiconductor element 11, the second semiconductor element 12, the insulating element 13, the first die pad 21, and the second die pad 22. As shown in Fig. As shown in Figure 6, the sealing resin 50 also covers the first wires 41, the second wires 42, the third wires 43, and the fourth wires 44. The sealing resin 50 can be made of an insulating material. For example, the sealing resin 50 can be made of a material containing an epoxy resin. Viewed in the third direction z, the sealing resin 50 is rectangular.

[0023] As in the Fig. As shown in figures 3 to 5, the sealing resin 50 has a top surface 51, a bottom surface 52, two first side surfaces 53, a second side surface 54 and a third side surface 55.

[0024] As in the Fig. As shown in Figures 3 to 5, the top surface 51 and the bottom surface 52 are arranged such that they point away from each other in the third direction z. The top surface 51 and the bottom surface 52 are flat (or essentially flat).

[0025] As in the Fig. As shown in Figures 3 to 5, the first two side surfaces 53 are connected to the top surface 51 and the bottom surface 52 and point away from each other in the first direction x. Each first side 53 has a first upper section 531, a first lower section 532, and a first intermediate section 533. The first upper section 531 is connected to the top surface 51 at one end in the third direction z and to the first intermediate section 533 at the other end in the third direction z. The first upper section 531 is inclined relative to the top surface 51. The first lower section 532 is connected to the bottom surface 52 at one end in the third direction z and to the first intermediate section 533 at the other end in the third direction z. The first lower section 532 is inclined relative to the bottom surface 52. The first intermediate section 533 is located between the first upper section 531 and the first lower section 532 in the third direction z.The first intermediate section 533 contains the third direction z as a plane direction. Viewed in the third direction z, the first intermediate section 533 is located outside the top 51 and the bottom 52.

[0026] As in the Fig. 3 and Fig. As shown in Figure 4, the second side surface 54 connects to the top surface 51 and the bottom surface 52 and faces one side in the second direction y. The second side surface 54 is located closer to the first die pad 21 than the third side 55. The second side surface 54 comprises a second upper section 541, a second lower section 542, and a second intermediate section 543. The second upper section 541 is connected at one end in the third direction z to the top surface 51 and at the other end in the third direction z to the second intermediate section 543. The second upper section 541 is inclined relative to the top surface 51. The second lower section 542 is connected at one end in the third direction z to the bottom surface 52 and at the other end in the third direction z to the second intermediate section 543. The second lower section 542 is inclined relative to the bottom surface 52.The second intermediate section 543 is located between the second upper section 541 and the second lower section 542 in the third direction z. The second intermediate section 543 incorporates the third direction z as a plane direction (direction in the plane). Viewed in the third direction z, the second intermediate section 543 lies outside the top 51 and the bottom 52.

[0027] As in the Fig. 3 and Fig. As shown in Figure 5, the third side surface 55 connects to the top surface 51 and the bottom surface 52 and points away from the second side 54 in the second direction y. The third side surface 55 is closer to the second die pad 22 than the second side surface 54. The third side surface 55 comprises a third upper section 551, a third lower section 552, and a third intermediate section 553. The third upper section 551 is connected at one end in the third direction z to the top surface 51 and at the other end in the third direction z to the third intermediate section 553. The third upper section 551 is inclined relative to the top surface 51. The third lower section 552 is connected at one end in the third direction z to the bottom surface 52 and at the other end in the third direction z to the third intermediate section 553. The third lower section 552 is inclined relative to the bottom surface 52.The third intermediate section 553 is located between the third upper section 551 and the third lower section 552 in the third direction z. The third intermediate section 553 contains the third direction z as a plane direction (direction in the plane). Viewed in the third direction z, the third intermediate section 553 is located outside the top 51 and the bottom 52.

[0028] The first die pad 21, the second die pad 22, the first support conductor 23, the second support conductor 24, the third support conductor 25, the fourth support conductor 26, the two outer conductors 27, the first intermediate conductors 31 and the second intermediate conductors 32 can be made of a material such as copper (Cu).

[0029] The first die pad 21 and the second die pad 22 are spaced apart in the second direction y, as shown in the Fig. 1 and Fig. Figure 2 shows the semiconductor device A10. In this device, the first semiconductor element 11 and the insulating element 13 are mounted on the first die pad 21, and the second semiconductor element 12 is mounted on the second die pad 22. Viewed in the third direction z, the area of ​​the first die pad 21 is larger than the area of ​​the second die pad 22. Alternatively, the first semiconductor element 11 can be mounted on the first die pad 21, while the second semiconductor element 12 and the insulating element 13 can be mounted on the second die pad 22.

[0030] As in Fig. 6 and Fig. As shown in Figure 7, the first die pad 21 has a first mounting surface 21A that faces one side of the third direction z. The first semiconductor element 11 and the insulating element 13 are bonded to the first mounting surface 21A via a bonding layer 29. The bonding layer 29 can be formed from a paste containing metal particles. These metal particles can be, for example, silver (Ag). The bonding layer 29 is therefore an electrical conductor. Alternatively, the bonding layer 29 can also be solder. The first die pad 21 is covered by the sealing resin 50.

[0031] As in Fig. 2, Fig. 6 and Fig. As shown in Figure 7, the first die pad 21 is formed with two first holes 211, a plurality of second holes 212, and two third holes 213. The two first holes 211, the second holes 212, and the two third holes 213 each penetrate the first die pad 21 in the third direction z. The two first holes 211 are located on the respective sides of the first semiconductor element 11 in the first direction x. Each of the two first holes 211 extends in the second direction y. The second holes 212 are located between the first semiconductor element 11 and the insulating element 13 in the second direction y. Each of the second holes 212 extends in the first direction x. The second holes 212 are arranged along the first direction x. The two third holes 213 are located on the respective sides of the insulating element 13 in the first direction x. Each of the two third holes 213 extends in the second direction y.

[0032] The first support ladder 23 is connected to one side of the first die pad 21 in the first direction x, as shown in the Fig. 1 and Fig. Figure 2 shows the first support conductor 23 spaced from the first two side surfaces 53 of the sealing resin 50. The first support conductor 23 is free to the outside from the second side surface 54 of the sealing resin 50. The first support conductor 23 has a first inner section 231 and a first outer section 232. The first inner section 231 is connected to the first die pad 21 and is covered by the sealing resin 50. The first outer section 232 is connected to the first inner section 231 and is free to the outside. Viewed in the third direction z, the first outer section 232 extends in the second direction y. Viewed in the first direction x, the outer first section 232 is bent in a gull-wing shape. The surface of the first outer section 232 is, for example, coated with tin.

[0033] As in Fig. As shown in Figure 9, the first die pad 21 has a first edge 21B extending in the first direction x, and this first edge 21B is closest to the second side surface 54 of the sealing resin 50 compared to the other edges. Viewed in the third direction z, the first inner section 231 has a first section 231A extending from the boundary defined by the extension line EL of the first edge 21B to the first die pad 21. The first section 231A is spaced from the second side surface 54. Fig. 9 shows a hatching pattern corresponding to the first section 231A. As in the Fig. 10A and Fig. As shown in Figure 10C, the cross-sectional area of ​​the first section 231A in its direction of extension is larger than the cross-sectional area of ​​the first outer section 232 in its direction of extension. It should be noted that the "cross-sectional area in the direction of extension" refers to the area in the cross-section perpendicular to the direction of extension of the object in question.

[0034] As in Fig. As shown in Figure 9, the first inner section 231 has a second section 231B that connects the first section 231A and the first outer section 232. Fig. Section 9, corresponding to the second section 231B, is also represented by hatching. As in the Fig. 10B and Fig. As shown in Figure 10C, the cross-sectional area of ​​the second section 231B in its extension direction is larger than the cross-sectional area of ​​the first outer section 232 in its extension direction.

[0035] The second support ladder 24 is located opposite the first support ladder 23 with respect to the first die pad 21, as shown in the Fig. 1 and Fig. Figure 2 shows the second support ladder 24 connected to the first die pad 21. The second support ladder 24 is spaced from the first two side faces 53 of the sealing resin 50. The second support ladder 24 is free to the outside from the second side face 54 of the sealing resin 50. The second support ladder 24 has a second inner section 241 and a second outer section 242. The second inner section 241 is connected to the first die pad 21 and is covered by the sealing resin 50. The second outer section 242 is connected to the second inner section 241 and is free to the outside. Viewed in the third direction z, the second outer section 242 extends in the second direction y. As shown in Fig. As shown in Figure 3, the second outer section 242 is bent in the first direction x in a wing-like shape. The surface of the second outer section 242 is coated, for example, with tin. As shown in the Fig. 11A and Fig. As shown in Figure 11B, the cross-sectional area of ​​the second inner section 241 in its direction of extension is larger than the cross-sectional area of ​​the second outer section 242 in its direction of extension, as with the first support ladder 23.

[0036] As in Fig. As shown in Figure 7, the first inner section 231 of the first support ladder 23 and the second inner section 241 of the second support ladder 24 overlap with the first die pad 21 in the first direction x. Fig. As shown in Figure 2, the first inner section 231, the second inner section 241 and the second holes 212 of the first die pad 21 overlap, viewed in the third direction z, with a virtual line VL extending along the first direction x.

[0037] As in the Fig. 6 and Fig. As shown in Figure 8, the second die pad 22 has a second mounting surface 22A, which faces the same direction z as the first mounting surface 21A of the first die pad 21. The second semiconductor element 12 is bonded to the second mounting surface 22A via a bonding layer 29. The second die pad 22 is covered by the sealing resin 50.

[0038] As in the Fig. 1 and Fig. As shown in Figure 2, the third support ladder 25 is located on the same side as the first support ladder 23 with respect to the first die pad 21, and the third support ladder 25 is connected to the second die pad 22. The third support ladder 25 is spaced from the first two side faces 53 of the sealing resin 50. The third support ladder 25 is free to the outside from the third side face 55 of the sealing resin 50. The third support ladder 25 has a third inner section 251 and a third outer section 252. The third inner section 251 is connected to the second die pad 22 and is covered by the sealing resin 50. The third outer section 252 is connected to the third inner section 251 and is free to the outside. Viewed in the third direction z, the third outer section 252 extends in the second direction y. Viewed in the first direction x, the third outer section 252 is bent in a wing-like shape.The surface of the third outer section 252 is, for example, coated with tin. As in the . Fig. 12A and Fig. As shown in Figure 12B, the cross-sectional area in the direction of extension of the third inner section 251 is larger than the cross-sectional area in the direction of extension of the third outer section 252, as is the case with the first support ladder 23.

[0039] As in the Fig. 1 and Fig. As shown in Figure 2, the fourth support ladder 26 is opposite the third support ladder 25 with respect to the second die pad 22, and the fourth support ladder 26 is connected to the second die pad 22. The fourth support ladder 26 is spaced apart from the two first side faces 53 of the sealing resin 50. The fourth support ladder 26 is exposed to the outside from the third side face 55 of the sealing resin 50. The fourth support ladder 26 has a fourth inner section 261 and a fourth outer section 262. The fourth inner section 261 is connected to the second die pad 22 and is covered by the sealing resin 50. The fourth outer section 262 is connected to the fourth inner section 261 and is exposed to the outside. Viewed in the third direction z, the fourth outer section 262 extends in the second direction y. Viewed in the first direction x, the fourth outer section 262 is bent in a wing-like shape.The surface of the fourth outer section 262 is, for example, coated with tin. As with the first support ladder 23, the cross-sectional area of ​​the fourth inner section 261 is larger in its direction of extension than the cross-sectional area of ​​the fourth outer section 262 in its direction of extension.

[0040] The two outer conductors 27 enclose the third support conductor 25 and the fourth support conductor 26 in the first direction x, as shown in the Fig. 1 and Fig. Figure 2 shows that each of the two outer conductors 27 is spaced from the second die pad 22 and the first two side surfaces 53 of the sealing resin 50. Each of the two outer conductors 27 is exposed to the outside from the third side surface 55 of the sealing resin 50. Each of the two outer conductors 27 is electrically connected to the second semiconductor element 12 via one of the fourth wires 44.

[0041] As in Fig. As shown in Figure 2, each of the two outer conductors 27 has an inner section 271 and an outer section 272. The inner section 271 is covered by the sealing resin 50. The outer section 272 is connected to the inner section 271 and is exposed on the outside. Viewed in the third direction z, the outer section 272 extends in the second direction y. As shown in Figure 2, each of the two outer conductors 27 has an inner section 271 and an outer section 272. Fig. As shown in Figure 3, the outer section 272 is bent in the first direction x in a wing-like shape. The surface of the outer section 272 is coated, for example, with tin.

[0042] As in Fig. 8 shown in the first direction x, the third inner section 251 of the third support ladder 25, the fourth inner section 261 of the fourth support ladder 26 and the inner sections 271 of the outer ladder 27 overlap with the second die pad 22.

[0043] The first intermediate conductors 31 are located between the first support conductor 23 and the second support conductor 24 in the first direction x, as shown in Fig. 1 and Fig. Figure 2 shows the first intermediate conductors 31 located in the second direction y on the side of the first die pad 21 facing away from the second die pad 22. The first intermediate conductors 31 are arranged along the first direction x. At least one of the first intermediate conductors 31 is electrically connected to the first semiconductor element 11 via one of the second wires 42.

[0044] As in Fig. 2 and Fig. As shown in Figure 6, each first intermediate conductor 31 has an inner section 311 and an outer section 312. The inner section 311 is covered by the sealing resin 50. The outer section 312 is connected to the inner section 311 and is exposed to the outside from the second side surface 54 of the sealing resin 50. Viewed in the third direction z, the outer section 312 extends in the second direction y. Viewed in the first direction x, the outer section 312 is bent in a wing-like shape. The shape of the outer section 312 is the same as that of the second outer section 242 of the second support conductor 24 in Figure 6. Fig. 3. The surface of the outer section 312 is, for example, coated with tin.

[0045] The second intermediate conductors 32 are located between the third support conductor 25 and the fourth support conductor 26 in the first direction x, as shown in the Fig. 1 and Fig. Figure 2 shows the second intermediate conductors 32 located in the second direction y on the side of the second die pad 22 facing away from the first die pad 21. The second intermediate conductors 32 are arranged along the first direction x. At least one of the second intermediate conductors 32 is electrically connected to the second semiconductor element 12 via one of the fourth wires 44.

[0046] As in Fig. 2 and Fig. As shown in Figure 6, every second intermediate conductor 32 has an inner section 321 and an outer section 322. The inner section 321 is covered by the sealing resin 50. The outer section 322 is connected to the inner section 321 and is exposed to the outside from the third side surface 55 of the sealing resin 50. Viewed in the third direction z, the outer section 322 extends in the second direction y. Viewed in the first direction x, the outer section 322 is bent in a wing-like shape. The shape of the outer section 322 is the same as that of the outer section 272 of the outer conductor 27 in Figure 6. Fig. 3. The surface of the outer section 322 is, for example, coated with tin.

[0047] Each of the first wires 41 is electrically connected to one of the third electrodes 131 of the insulating element 13 and one of the first electrodes 111 of the first semiconductor element 11, as shown in Fig. 2 and Fig. Figure 6 shows that the first semiconductor element 11 is electrically connected to the insulating element 13. The first wires 41 are arranged along the first direction x. At least one of the first wires 41 extends over one of the second holes 212 in the first die pad 21. The first wires 41 can, for example, be made of gold.

[0048] As in Fig. 2 and Fig. As shown in Figure 6, each of the second wires 42 is electrically connected to one of the first electrodes 111 of the first semiconductor element 11 and to the inner section 311 of one of the first intermediate conductors 31. Thus, at least one of the first intermediate conductors 31 is electrically connected to the first semiconductor element 11. At least one of the second wires 42 is electrically connected to one of the first electrodes 111 and to the first inner section 231 of the first support conductor 23. Thus, the first support conductor 23 is electrically connected to the first semiconductor element 11. Furthermore, at least one of the second wires 42 is electrically connected to one of the first electrodes 111 and to the second inner section 241 of the second support conductor 24. Thus, the second support conductor 24 is electrically connected to the first semiconductor element 11. At least the first support conductor 23 and / or the second support conductor 24 serves as ground for the first semiconductor element 11. The second wires 42 can be connected to, for example, the first semiconductor element 11.B. be made of gold. Alternatively, every second wire 42 can have a core element made of copper and a coating element made of palladium to cover the core element.

[0049] Each of the third wires 43 is electrically connected to one of the fourth electrodes 132 of the insulating element 13 and to one of the second electrodes 121 of the second semiconductor element 12, as shown in Fig. 2 and Fig. Figure 6 shows that the second semiconductor element 12 is electrically connected to the insulating element 13. The third wires 43 are arranged along the first direction x. The third wires 43 form a bridge between the first die pad 21 and the second die pad 22. The third wires 43 can, for example, be made of gold.

[0050] Each of the fourth wires 44 is electrically connected to one of the second electrodes 121 of the second semiconductor element 12 and to the inner section 321 of one of the second intermediate conductors 32, as shown in Fig. 2 and Fig. Figure 6 shows that at least one of the second intermediate conductors 32 is electrically connected to the second semiconductor element 12. At least one of the fourth wires 44 is electrically connected to one of the second electrodes 121 and to the third inner section 251 of the third support conductor 25. Thus, the third support conductor 25 is electrically connected to the second semiconductor element 12. At least one of the fourth wires 44 is electrically connected to one of the second electrodes 121 and to the fourth inner section 261 of the fourth support conductor 26. Thus, the fourth support conductor 26 is electrically connected to the second semiconductor element 12. At least the third support conductor 25 and / or the fourth support conductor 26 serves as ground for the second semiconductor element 12. At least one of the fourth wires 44 is electrically connected to one of the second electrodes 121 and to the inner section 271 of one of the two outer conductors 27.Thus, at least one of the two outer conductors 27 is electrically connected to the second semiconductor element 12. The fourth wires 44 can, for example, be made of gold. Alternatively, each fourth wire 44 can have a core element made of copper and a coating element made of palladium to cover the core element.

[0051] In general, a motor drive circuit of an inverter is configured as a half-bridge circuit with one or more low-side switching elements on the low-voltage side and one or more high-side switching elements on the high-voltage side. These switching elements are assumed to be MOSFETs. For the low-side switching element, the reference potentials for the source of the switching element and the gate driver controlling the switching element are ground. For the high-side switching element, however, the reference potentials for the source of the switching element and the gate driver controlling the switching element correspond to the potential at the output node of the half-bridge circuit. Since the potential at the output node changes depending on the switching operations of the high-side and low-side switching elements, the reference potential of the gate driver controlling the high-side switching element also changes.When the high-side switching element is turned on, the reference potential corresponds to the voltage applied to the drain of the high-side switching element (e.g., 600 V or higher). In semiconductor device A10, the ground of the first semiconductor element 11 and the ground of the second semiconductor element 12 are separated. Therefore, when semiconductor device A10 is used as a gate driver to control a high-side switching element, a voltage corresponding to the voltage applied to the drain of the high-side switching element is temporarily applied to the ground of the second semiconductor element 12.

[0052] As described below, the A10 semiconductor device can have, among other things, the following advantages.

[0053] As described above, the semiconductor device A10 comprises the first die pad 21, the first support conductor 23, the second support conductor 24, the first semiconductor element 11, and the sealing resin 50. The first support conductor 23 has a first inner section 231, which is covered by the sealing resin 50, and a first outer section 232, which is connected to the first inner section 231 and is exposed on the outside. Viewed in the third direction z, the first inner section 231 comprises the first section 231A, which extends from the boundary defined by the extension line EL of the first edge 21B of the first die pad 21 to the first die pad 21. The cross-sectional area of ​​the first section 231A is larger in its direction of extension than the cross-sectional area of ​​the first outer section 232 in its direction of extension.In this configuration, the bending stiffness in the cross-section of the first inner section 231 is greater than the bending stiffness in the cross-section of the first outer section 232. Therefore, if a load in the third direction z from a bonding tool or similar acts on the first die pad 21, bending of the first support conductor 23 in the third direction z is reduced more than is usually possible. Thus, according to the above configuration, it is possible to stabilize the position or posture of the die pad of the semiconductor device A10 during manufacturing.

[0054] The first inner section 231 of the first support ladder 23 has a second section 231B, which connects the first section 231A and the first outer section 232. The cross-sectional area of ​​the second section 231B is larger in its direction of extension than the cross-sectional area of ​​the first outer section 232 in its direction of extension. With this configuration, the bending stiffness at the cross-section of the first inner section 231 can be greater than the bending stiffness at the cross-section of the first outer section 232. Thus, if a load acts on the first die pad 21 in the third direction z, the bending of the first support ladder 23 in the third direction z can be further reduced.

[0055] The second support ladder 24 has a second inner section 241, which is covered by the sealing resin 50, and a second outer section 242, which is connected to the second inner section 241 and is exposed on the outside. The cross-sectional area of ​​the second inner section 241 is larger in its direction of extension than the cross-sectional area of ​​the second outer section 242 in its direction of extension. In this configuration, the bending stiffness at the cross-section of the second inner section 241 can be greater than the bending stiffness at the cross-section of the second outer section 242. Thus, if a load in the third direction z acts on the first die pad 21, bending of the second support ladder 24 in the third direction z is reduced more than is usually possible. This makes the position or posture of the first die pad 21 more stable.

[0056] The semiconductor device A10 further comprises the insulating element 13, which is mounted on the first die pad 21. The first die pad 21 is formed with two first holes 211 and a plurality of second holes 212, each of which penetrates the die pad 21 in the third direction z. The two first holes 211 are located on both sides in the first direction x of the first semiconductor element 11. The second holes 212 are arranged between the first semiconductor element 11 and the insulating element 13 in the second direction y. In this configuration, liquefied sealing resin 50 can pass through the first holes 211 and the second holes 212 during the formation of the sealing resin 50 for the fabrication of the semiconductor device A10, thereby preventing the formation of voids in the sealing resin 50 in the event of insufficient filling.

[0057] Viewed in the third direction z, the first inner section 231 of the first support conductor 23, the second inner section 241 of the second support conductor 24, and the second holes 212 in the first die pad 21 are arranged such that they overlap with the virtual line VL extending in the first direction x. In this configuration, during the formation of the sealing resin 50 for the fabrication of the semiconductor device A10, rotation of the first die pad 21 about the first direction x can be prevented by the fluidized sealing resin 50 coming into contact with the first die pad 21. In this way, the layer thickness of the sealing resin 50 on the first die pad 21 can be made uniform. Furthermore, since the second holes 212 are aligned along the first direction x, it is possible to effectively suppress any unwanted rotation of the first die pad 21 about the first direction x.

[0058] Viewed in the first direction x, the first inner section 231 of the first terminal 23 and the second inner section 241 of the second terminal 24 are arranged such that they overlap with the first die pad 21. With this configuration, it is advantageously possible to reduce the size of the semiconductor device A10 in the third direction z. SECOND VERSION:

[0059] With reference to Fig. Figures 13 to 19C describe a semiconductor device A20 according to a second embodiment of the present disclosure. In these figures, the same reference numbers are used for the same or similar elements as described above for the semiconductor device A10, and redundant descriptions are omitted. For better understanding, the sealing resin 50 in Fig. 14 is shown transparently, and its outer shape is indicated by imaginary lines.

[0060] The semiconductor device A20 differs from the semiconductor device A10 in its configurations relating to the first support conductor 23, the second support conductor 24, the third support conductor 25 and the fourth support conductor 26.

[0061] As from Fig. As can be seen in Figure 15, two cutting marks 232A, facing away from each other in the first direction x, are formed on the first outer section 232 of the first support ladder 23. The cutting marks 232A represent traces made on the first outer section 232 by cuts in the corresponding web 82 (see Figure 15). Fig. 17) have arisen.

[0062] As in Fig. As shown in Figure 17, during the fabrication of the semiconductor device A20, the first support conductor 23, together with the first die pad 21 and the second die pad 22, is produced from a leadframe 80. The leadframe 80 has a frame section 81 and two webs 82. The frame section 81 surrounds the first die pad 21 and the second die pad 22. The first die pad 21, the second die pad 22, the first support conductor 23, the second support conductor 24, the third support conductor 25, the fourth support conductor 26, the two outer conductors 27, the first intermediate conductors 31, and the second intermediate conductors 32 are connected to the frame section 81. The two webs 82 are spaced apart in the second direction y. Each web 82 is connected to the frame section 81 at two points spaced apart in the first direction x.The first support ladder 23, the second support ladder 24 and the first intermediate ladders 31 are connected to one of the two bridges 82, while the third support ladder 25, the fourth support ladder 26, the two outer ladders 27 and the second intermediate ladders 32 are connected to the other bridge 82.

[0063] During the manufacture of the semiconductor device A20, after the sealing resin 50 has been formed, the necessary cuts are made in the respective webs 82. As a result, cut marks 232A are formed on the first outer section 232 of the first support conductor 23. In addition, the first outer section 232 is shaped like a hinged wing.

[0064] As in Fig. 13, Fig. 14 and Fig. As shown in Figure 16, the first outer section 232 of the first support ladder 23 has a third section 232B and a fourth section 232C. As shown in Fig. As shown in Figure 18, the third section 232B is located between the second side surface 54 of the sealing resin 50 and the cut marks 232A. The fourth section 232C is located opposite the third section 232B with respect to the cut marks 232A. Fig. 18. Section 232B (third section) and Section 232C (fourth section) are marked by hatching. As in Fig. 19B and Fig. As shown in Figure 19C, the cross-sectional area of ​​the third section 232B in its extension direction is larger than the cross-sectional area of ​​the fourth section 232C in its extension direction.

[0065] As in Fig. 18, Fig. 19A, Fig. 19B and Fig. As shown in Figure 19C, in the semiconductor device A20, the cross-sectional area of ​​the first section 231A of the first inner section 231 of the first support conductor 23 in its direction of extension is larger than any of the cross-sectional areas of the first outer section 232 in its direction of extension. The cross-sectional area of ​​the third section 232B of the first outer section 232 of the first support conductor 23 in its direction of extension is equal to the cross-sectional area of ​​the second section 231B of the first inner section 231 in its direction of extension.

[0066] As in Fig. 13 and Fig. As shown in Figure 14, in the semiconductor device A20, the second outer section 242 of the second support conductor 24, the third outer section 252 of the third support conductor 25 and the fourth outer section 262 of the fourth support conductor 26 are each arranged to have the same design as the first outer section 232 of the first support conductor 23 with regard to the cut marks (232A), the third section (232B) and the fourth section (232C).

[0067] As explained below, the A20 semiconductor device can have, among other things, the following advantages.

[0068] The semiconductor device A20 comprises the first die pad 21, the first support conductor 23, the second support conductor 24, the first semiconductor element 11, and the sealing resin 50. The first support conductor 23 has a first inner section 231, which is covered by the sealing resin 50, and a first outer section 232, which is connected to the first inner section 231 and exposed on the outside. Viewed in the third direction z, the first inner section 231 comprises the first section 231A, which extends from the boundary defined by the extension line EL of the first edge 21B of the first die pad 21 to the first die pad 21. The cross-sectional area of ​​the first section 231A in its extension direction is larger than the cross-sectional area of ​​the first outer section 232 in its extension direction. With this design, it is possible to stabilize the position of the die pad during the manufacturing of the semiconductor component A20.Since the semiconductor device A20 has the same features as the semiconductor device A10, it also has the same advantages as the semiconductor device A10.

[0069] In the semiconductor device A20, the first outer section 232 of the first support conductor 23 comprises the third section 232B and the fourth section 232C. The third section 232B is located between the second side surface 54 of the sealing resin 50 and the cut marks 232A. The fourth section 232C is opposite the third section 232B with respect to the cut marks 232A. The cross-sectional area of ​​the third section 232B in its direction of extension is larger than the cross-sectional area of ​​the fourth section 232C in its direction of extension. In this configuration, the bending stiffness at the cross-section of the first outer section 232 is greater than that of the semiconductor device A10.Therefore, if a load in the third direction z acts on the first die pad 21, the deflection of the first support conductor 23 in the third direction z is further reduced compared to the case of the semiconductor device A10, thereby further stabilizing the position of the first die pad 21. THIRD VERSION:

[0070] A semiconductor device A30 according to a third embodiment of the present disclosure is below referred to Fig. 20 to 25C are described. In these figures, the same reference numbers are used for the same or similar elements as described above for the semiconductor device A10, and redundant descriptions are omitted. For better understanding, the sealing resin 50 in Fig. 21 is shown transparently, and its outer shape is indicated by imaginary lines.

[0071] The semiconductor device A30 differs from the semiconductor device A10 in that it has two support conductors 28 instead of the two outer conductors 27. Furthermore, the number of first intermediate conductors 31 and the number of second intermediate conductors 32 are smaller in the semiconductor device A30 than in the semiconductor device A10.

[0072] As in Fig. 20 and Fig. As shown in Figure 21, the two support conductors 28 are spaced apart from each other in the second direction y. Each of the two support conductors 28 extends in the second direction y. The two support conductors 28 are connected to the first die pad 21 and the second die pad 22, respectively. As shown in Fig. 22 and Fig. As shown in Figure 23, each of the two support conductors 28 has an end face 28A that points in the second direction y. The end face 28A of the support conductor 28 connected to the first die pad 21 is exposed to the second side face 54 of the sealing resin 50. The end face 28A of the support conductor 28 connected to the second die pad 22 is exposed to the third side face 55 of the sealing resin 50.

[0073] As in the Fig. 24, Fig. 25A and Fig.As shown in Figure 25C, the first support conductor 23 of the semiconductor device A30 is configured such that the cross-sectional area of ​​the first section 231A of the first inner section 231 is larger in its direction of extension than the cross-sectional area of ​​the first outer section 232 in its direction of extension. Likewise, the cross-sectional area of ​​the second section 231B of the first inner section 231 is larger in its direction of extension than the cross-sectional area of ​​the first outer section 232 in its direction of extension.

[0074] As explained below, the A30 semiconductor device can offer, among other things, the following advantages.

[0075] The semiconductor device A30 comprises the first die pad 21, the first support conductor 23, the second support conductor 24, the first semiconductor element 11, and the sealing resin 50. The first support conductor 23 has a first inner section 231, which is covered by the sealing resin 50, and a first outer section 232, which is connected to the first inner section 231 and exposed on the outside. Viewed in the third direction z, the first inner section 231 has the first section 231A, which extends from the boundary defined by the extension line EL of the first edge 21B of the first die pad 21 to the first die pad 21. The cross-sectional area of ​​the first section 231A in its extension direction is larger than the cross-sectional area of ​​the first outer section 232 in its extension direction. With this design, it is possible to stabilize the position of the die pad during the manufacturing of the semiconductor component A30.Since the semiconductor device A30 also has the same features as the semiconductor device A10, it also has the same advantages as the semiconductor device A10.

[0076] The semiconductor device A30 also includes the support conductor 28. The support conductor 28 is connected to the first die pad 21 and is exposed to the outside from the second side surface 54 of the sealing resin 50. In this configuration, the support conductor 28, together with the first support conductor 23, counteracts bending in the third direction z when a load acts on the first die pad 21 in this direction. This further reduces deflection of the first support conductor 23 in the third direction z relative to the semiconductor device A10, thereby further stabilizing the position of the first die pad 21.

[0077] The present disclosure is not limited to the embodiments described above. The specific configurations of the parts disclosed herein can be modified in various ways.

[0078] The present disclosure includes the embodiments described in the following sections. Option 1

[0079] Semiconductor component, comprising: a first die pad; a first support ladder connected to one side of the first die pad in a first direction; a second support ladder that is opposite the first support ladder in relation to the first die pad and is connected to the first die pad; a first semiconductor element mounted on the first die pad; and a sealing resin that covers the first die pad and the first semiconductor element, wherein the sealing resin has two first side surfaces that point away from each other in the first direction, and a second side surface that points in a second direction perpendicular to the first direction, wherein the first support ladder and the second support ladder are each spaced away from the two first side surfaces and are exposed to the outside from the second side surface, wherein the first support ladder has a first inner section which is covered by the sealing resin and a first outer section which is connected to the first inner section and is exposed to the outside, wherein the first die pad has a first edge extending in the first direction and is located closest to the second side surface, where, viewed in a third direction perpendicular to the first direction and the second direction, the first inner section has a first section extending from a boundary defined by an extension of the first edge to the first die pad, and wherein a cross-sectional area of ​​the first section in a direction in which the first section extends is larger than a cross-sectional area of ​​the first outer section in a direction in which the first outer section extends. Option 2

[0080] Semiconductor device according to variant 1, wherein the first inner section has a second section that connects the first section and the first outer section, wherein the cross-sectional area of ​​the second section in a direction in which the second section extends is larger than the cross-sectional area of ​​the first outer section in the direction in which the first outer section extends. Variant 3

[0081] Semiconductor component according to variant 2, wherein the second support conductor has a second inner section which is covered by the sealing resin and a second outer section which is connected to the second inner section and is exposed to the outside, and wherein a cross-sectional area of ​​the second inner section in a direction in which the second inner section extends is larger than a cross-sectional area of ​​the second outer section in a direction in which the second outer section extends. Variant 4

[0082] Semiconductor device according to variant 3, wherein both the first outer section and the second outer section extend in the second direction. Variant 5

[0083] Semiconductor device according to variant 4, wherein the first outer section is formed with a cutting mark pointing in the first direction, wherein the first outer section has a third section arranged between the second side surface and the cutting mark, and a fourth section opposite the third section with respect to the cutting mark, wherein a cross-sectional area of ​​the third section in a direction in which the third section extends is larger than a cross-sectional area of ​​the fourth section in a direction in which the fourth section extends. Variant 6

[0084] Semiconductor component according to one of variants 3 to 5, further comprising: a second die pad, spaced from the first die pad in the second direction; and a second semiconductor element mounted on the second die pad, where the second die pad and the second semiconductor element are covered by the sealing resin. Variant 7

[0085] Semiconductor device according to variant 6, further comprising: a third support ladder, arranged on the same side as the first support ladder with respect to the first die pad in the first direction and connected to the second die pad; and a fourth support ladder, which is opposite the third support ladder in relation to the second die pad and is connected to the second die pad, wherein the sealing resin has a third side surface which faces away from the second side surface in the second direction, wherein the third support ladder and the fourth support ladder are each spaced away from the first two side surfaces and are exposed to the outside from the third side surface. Variant 8

[0086] Semiconductor device according to variant 7, wherein the third support conductor has a third inner section which is covered by the sealing resin and a third outer section which is connected to the third inner section and is exposed to the outside, wherein a cross-sectional area of ​​the third inner section in a direction in which the third inner section extends is larger than a cross-sectional area of ​​the third outer section in a direction in which the third outer section extends. Variant 9

[0087] Semiconductor device according to variant 8, wherein the first die pad has a larger area than the second die pad when viewed in the third direction. Variant 10

[0088] Semiconductor device according to variant 9, further comprising: an insulating element mounted on the first die pad, wherein the insulating element is designed as a type of inductive coupling, wherein the insulating element is electrically connected to the first semiconductor element and the second semiconductor element. Variant 11

[0089] Semiconductor component according to variant 10, wherein the insulating element is located next to the first semiconductor element in the second direction, wherein the first die pad is formed with two first holes and a second hole, each extending in the third direction through the first die pad, where the first two holes are located on the respective sides of the first semiconductor element in the first direction, where the second hole is arranged between the first semiconductor element and the insulating element in the second direction. Variant 12

[0090] Semiconductor device according to variant 11, wherein the second hole extends in the first direction. Variant 13

[0091] Semiconductor device according to variant 12, wherein the first inner section, the second inner section and the second hole are arranged such that they overlap with a virtual line extending in the first direction, seen in the third direction. Variant 14

[0092] Semiconductor device according to variant 13, wherein the first inner section and the second inner section are arranged so that, viewed in the first direction, they overlap with the first die pad. Variant 15

[0093] Semiconductor device according to variant 14, wherein the third inner section is arranged so that, viewed in the first direction, it overlaps with the second die pad. Variant 16

[0094] Semiconductor component according to variant 15, further comprising: first intermediate conductors arranged between the first support conductor and the second support conductor, wherein at least one of the first intermediate conductors is electrically connected to the first semiconductor component. Variant 17.

[0095] Semiconductor component according to variant 16, further comprising: second intermediate conductors arranged between the third support conductor and the fourth support conductor, wherein at least one of the second intermediate conductors is electrically connected to the second semiconductor component. REFERENCE MARK

[0096] A10, A20, A30: Semiconductor component 11: First semiconductor element 111: First electrode 12: Second semiconductor element 121: Second electrode 13: Insulating element 131: Third electrode 132: Fourth electrode 21: First die pad 21A: First mounting surface 21B: First edge 211: First hole 212: Second hole 213: Third hole 22: Second die pad 22A: Second mounting surface 23: First support ladder 231: First inner section 231A: First Section 231B: Second Section 232: First outer section 232A: Cut mark 232B: Third Section 232C: Fourth Section 24: Second support ladder 241: Second inner section 242: Second outer section 25: Third support ladder 251: Third inner section 252: Third outer section 26: Fourth support ladder 261: Fourth inner section 262: Fourth outer section 27: Outer conductor 271: Inner section 272: Outer section 28: Support ladder 28A: Front surface 29: Bonding layer 31: First intermediate conductor 311: Inner section 312: Outer section 32: Second intermediate conductor 321: Inner section 322: Outer section 41: First wire 42: Second wire 43: Third wire 44: Fourth wire 50: Sealing resin 51: Top side 52: Bottom side 53: First side surface 531: First upper section 532: First lower section 533: First intermediate section 54: Second side surface 541: Second upper section 542: Second lower section 543: Second intermediate section 55: Third side surface 551: Third upper section 552: Third lower section 553: Third intermediate section 80: Ladder frame 81: Frame section 82: Bridge x: First direction y: Second direction z: Third direction QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2016- 207714 A

[0005]

Claims

[1] Semiconductor device comprising: a first die pad; a first support ladder connected to one side of the first die pad in a first direction; a second support ladder that is opposite the first support ladder in relation to the first die pad and is connected to the first die pad; a first semiconductor element mounted on the first die pad; and a sealing resin that covers the first die pad and the first semiconductor element, wherein the sealing resin has two first side surfaces that point away from each other in the first direction, and a second side surface that points in a second direction perpendicular to the first direction, wherein the first support ladder and the second support ladder are each spaced away from the two first side surfaces and are exposed to the outside from the second side surface, wherein the first support ladder has a first inner section which is covered by the sealing resin and a first outer section which is connected to the first inner section and is exposed to the outside, wherein the first die pad has a first edge extending in the first direction and is located closest to the second side surface, where, viewed in a third direction perpendicular to the first direction and the second direction, the first inner section has a first section extending from a boundary defined by an extension of the first edge to the first die pad, and wherein a cross-sectional area of ​​the first section in a direction in which the first section extends is larger than a cross-sectional area of ​​the first outer section in a direction in which the first outer section extends. [2] Semiconductor device according to claim 1, wherein the first inner section has a second section connecting the first section and the first outer section, wherein the cross-sectional area of ​​the second section in a direction in which the second section extends is larger than the cross-sectional area of ​​the first outer section in the direction in which the first outer section extends. [3] Semiconductor device according to claim 2, wherein the second support conductor has a second inner section which is covered by the sealing resin and a second outer section which is connected to the second inner section and is exposed to the outside, and wherein a cross-sectional area of ​​the second inner section in a direction in which the second inner section extends is larger than a cross-sectional area of ​​the second outer section in a direction in which the second outer section extends. [4] Semiconductor device according to claim 3, wherein both the first outer section and the second outer section extend in the second direction. [5] Semiconductor device according to claim 4, wherein the first outer section is formed with a cutting mark pointing in the first direction, wherein the first outer section has a third section arranged between the second side surface and the cutting mark, and a fourth section opposite the third section with respect to the cutting mark, wherein a cross-sectional area of ​​the third section in a direction in which the third section extends is larger than a cross-sectional area of ​​the fourth section in a direction in which the fourth section extends. [6] Semiconductor device according to any one of claims 3 to 5, further comprising: a second die pad, spaced from the first die pad in the second direction; and a second semiconductor element mounted on the second die pad, where the second die pad and the second semiconductor element are covered by the sealing resin. [7] Semiconductor device according to claim 6, further comprising: a third support ladder, arranged on the same side as the first support ladder with respect to the first die pad in the first direction and connected to the second die pad; and a fourth support ladder, which is opposite the third support ladder in relation to the second die pad and is connected to the second die pad, wherein the sealing resin has a third side surface which faces away from the second side surface in the second direction, wherein the third support ladder and the fourth support ladder are each spaced away from the first two side surfaces and are exposed to the outside from the third side surface. [8] Semiconductor device according to claim 7, wherein the third support conductor has a third inner section which is covered by the sealing resin and a third outer section which is connected to the third inner section and is exposed to the outside, wherein a cross-sectional area of ​​the third inner section in a direction in which the third inner section extends is larger than a cross-sectional area of ​​the third outer section in a direction in which the third outer section extends. [9] Semiconductor device according to claim 8, wherein, viewed in the third direction, the area of ​​the first die pad is larger than the area of ​​the second die pad. [10] Semiconductor device according to claim 9, further comprising: an insulating element mounted on the first die pad, wherein the insulating element is designed as a type of inductive coupling, wherein the insulating element is electrically connected to the first semiconductor element and the second semiconductor element. [11] Semiconductor device according to claim 10, wherein the insulating element is located next to the first semiconductor element in the second direction, wherein the first die pad is formed with two first holes and a second hole, each extending in the third direction through the first die pad, where the first two holes are located on the respective sides of the first semiconductor element in the first direction, where the second hole is arranged between the first semiconductor element and the insulating element in the second direction. [12] Semiconductor device according to claim 11, wherein the second hole extends in the first direction. [13] Semiconductor device according to claim 12, wherein the first inner section, the second inner section and the second hole are arranged such that they overlap with a virtual line which, when viewed in the third direction, extends in the first direction. [14] Semiconductor device according to claim 13, wherein the first inner section and the second inner section are arranged such that, viewed in the first direction, they overlap with the first die pad. [15] Semiconductor device according to claim 14, wherein the third inner section is arranged such that, viewed in the first direction, it overlaps with the second die pad. [16] Semiconductor device according to claim 15, further comprising: first intermediate conductors arranged between the first support conductor and the second support conductor, wherein at least one of the first intermediate conductors is electrically connected to the first semiconductor element. [17] Semiconductor device according to claim 16, further comprising: second intermediate conductors arranged between the third support conductor and the fourth support conductor, wherein at least one of the second support conductors is electrically connected to the second semiconductor element.

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