Power module and method for manufacturing it, as well as power converter device

Abstract

A power module (1) comprises a printed circuit board (12), a semiconductor device (30), a terminal (40), and a conductive connecting element (52). The printed circuit board (12) comprises an insulating layer (13) with a main surface (13b) and a circuit diagram (15) provided on the main surface (13b). The semiconductor device (30) is connected to the circuit diagram (15). The circuit diagram (15) comprises a circuit diagram (20). The terminal (40) comprises a first end (41). The first end (41) of the terminal (40) comprises a first surface (42) connected to the circuit diagram (20) and a second surface (43) opposite the first surface (42). The conductive connecting element (52) bridges the second surface (43) of the terminal (40) and the circuit diagram (20).

Description

TECHNICAL AREA

[0001] The present disclosure relates to a power module and a method for manufacturing the same, as well as a power converter device. STATE OF THE ART

[0002] Japanese Patent Publication No. 2001-237359 (PTL 1) discloses a power semiconductor device comprising a semiconductor chip, a terminal metal fitting, and a resin housing frame to which the terminal metal fitting is attached. The terminal metal fitting comprises a first electrode and a second electrode, the latter located distal to the first electrode. This power semiconductor device allows for a choice between soldering between the second electrode and the semiconductor chip and a connecting wire between the first electrode and the semiconductor chip for the electrical connection between the semiconductor chip and the terminal metal fitting. LIST OF CAPLETS PATENT LITERATURE

[0003] PTL 1: Japanese Patent Publication No. 2001-237359 BRIEF DESCRIPTION OF THE INVENTIONAL TECHNICAL TASK

[0004] The purpose of the present disclosure is to provide a power module and a power converter device that is improved in its reliability. TECHNICAL SOLUTION

[0005] According to the present disclosure, a power module comprises a printed circuit board, a semiconductor device, a terminal, and a first conductive connecting element. The printed circuit board comprises an insulating layer with a primary surface and a circuit diagram provided on the primary surface. The semiconductor device is connected to the circuit diagram. The circuit diagram comprises a first conductor pattern. The terminal comprises a first end. The first end of the terminal comprises a first surface connected to the first conductor pattern and a second surface opposite the first surface. The first conductive connecting element bridges the second surface and the first conductor pattern.

[0006] According to the present disclosure, a method for manufacturing a power module comprises preparing a printed circuit board. The printed circuit board comprises an insulating layer with a main surface and a circuit diagram provided on the main surface. The circuit diagram comprises a first circuit pattern. The method for manufacturing a power module according to the present embodiment comprises connecting a semiconductor device to the circuit diagram and connecting a terminal to the first circuit pattern. The terminal comprises a first end. The first end of the terminal comprises a first surface connected to the first circuit pattern and a second surface opposite the first surface. The method for manufacturing a power module according to the present embodiment comprises bridging the second surface and the first circuit pattern with a first conductive connecting element.

[0007] According to the present disclosure, a power converter device comprises: a main conversion circuit with the power module according to the present disclosure to convert received current and output the converted current; and a control circuit to output a control signal to the main conversion circuit to control the main conversion circuit. ADVANTAGEOUS EFFECTS OF THE INVENTION

[0008] The connection is electrically linked to the first conductor pattern not only by a connection between the first surface of the connection and the first conductor pattern, but also by the first conductive connecting element. Consequently, even if the connection to the first conductor pattern detaches, the connection remains electrically linked to the first conductor pattern via the first conductive connecting element. The power module and the power converter device disclosed herein are improved in their reliability. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a schematic cross-section of a power module according to a first embodiment. Fig. Figure 2 is a schematic, partially enlarged perspective view of the power module according to the first embodiment. Fig. Figure 3 is a schematic, partially enlarged top view of the power module according to the first embodiment. Fig. Figure 4 is a flowchart of a method for manufacturing the power module according to the first embodiment. Fig. Figure 5 is a schematic, partially enlarged perspective view of a power module according to a variation of the first embodiment. Fig. Figure 6 is a schematic, partially enlarged top view of the power module according to the variation of the first embodiment. Fig. Figure 7 is a schematic, partially enlarged top view of a power module according to a second embodiment. Fig. Figure 8 is a schematic, partially enlarged top view of a power module according to a first variation of the second embodiment. Fig. Figure 9 is a schematic, partially enlarged top view of a power module according to a second variation of the second embodiment. Fig. Figure 10 is a schematic, partially enlarged top view of a power module according to a third embodiment. Fig. Figure 11 is a schematic, partially enlarged perspective view of the power module according to the third embodiment. Fig. Figure 12 is a block diagram illustrating a configuration of a power conversion system according to a fourth embodiment. DESCRIPTION OF EXECUTION FORMS

[0009] The following describes embodiments of the present disclosure. It should be noted that each identical configuration is designated identically and is not described repeatedly. First embodiment.

[0010] Now, with reference to the Fig. Figures 1 to 3 describe a power module 1 according to a first embodiment. The power module 1 comprises a printed circuit board 12, semiconductor devices 30 and 31, a connector 40, and conductive connecting elements 50, 51, and 52. The power module 1 may further comprise a base plate 10, a housing 60, and a sealing element 61.

[0011] The base plate 10 supports the circuit board 12. The power module 1 generates heat, and the base plate 10 dissipates the heat from the power module 1. The base plate 10 is made, for example, of copper (Cu), an aluminum composite material reinforced with silicon carbide particles (AlSiC), or the like. The base plate 10 may be equipped with a cooling fin (not shown).

[0012] The printed circuit board 12 comprises an insulating layer 13 and a circuit diagram 15. The printed circuit board 12 may also include a conductor arrangement 14.

[0013] The insulating layer 13 is formed, for example, from an insulating material such as aluminum oxide (Al₂O₃), aluminum nitride (AlN), resin, or a filler-containing resin. The insulating layer 13 has a main surface 13a and a main surface 13b opposite the main surface 13a.

[0014] The conductor arrangement 14 is provided on the main surface 13a. The conductor diagram 15 is provided on the main surface 13b. The conductor diagram 15 includes a conductor pattern 20. The conductor pattern 20 is, for example, a connecting conductive contact area to which the terminal 40 is connected. The conductor pattern 20 may be spaced apart from that part of the conductor diagram 15 to which the semiconductor devices 30 and 31 are connected. The conductor arrangement 14 and the conductor diagram 15 are formed from a conductive material such as copper (Cu) or aluminum (Al). The conductor arrangement 14 and the conductor diagram 15 may have a two-layer structure, comprising a layer of aluminum (Al) in contact with the insulating layer 13 and a layer of copper (Cu) provided on top of the aluminum layer.The conductor circuit 15 has a surface which is provided with a structure or coating with irregularities to improve adhesion between the conductor circuit 15 and the sealing element 61.

[0015] The printed circuit board 12 is connected to the base plate 10 at a connection 11. Specifically, the conductor assembly 14 is connected to the base plate 10 at the connection 11. The connection 11 can be made, for example, of solder, a molded part sintered with fine silver particles, a similar molded part sintered with fine metal particles, a resin containing conductive fillers, or the like, or it can be a liquid-phase diffusion connection between the conductor assembly 14 and the base plate 10.

[0016] Semiconductor devices 30 and 31 are, for example, power semiconductor devices. Specifically, semiconductor devices 30 and 31 are switching devices such as insulated-gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), or rectifier devices such as Schottky barrier diodes. Semiconductor devices 30 and 31 are made of silicon (Si) or a wide-bandgap semiconductor material with a bandgap larger than that of silicon (Si). Examples of wide-bandgap semiconductor materials include silicon carbide (SiC), gallium nitride (GaN), diamond, or similar materials. Semiconductor devices 30 and 31 made of wide-bandgap semiconductor materials exhibit improved allowable current density and reduced power losses.This allows the power module 1 to be reduced in size.

[0017] Semiconductor devices 30 and 31 have electrodes. These electrodes are made, for example, of aluminum or an aluminum alloy with added silicon (Si). A coating layer, such as a layer of nickel (Ni) or gold (Au), may be provided on the electrodes of semiconductor devices 30 and 31.

[0018] The semiconductor device 30 is connected to a circuit diagram 15 via a connection 33. The semiconductor device 31 is connected to a circuit diagram 15 via a connection 34. The connections 33 and 34 can be made, for example, of solder, a molded part sintered with fine silver particles, a similar molded part sintered with fine metal particles, a resin containing conductive fillers, or the like, or they can be a liquid-phase diffusion connection between the electrodes of the semiconductor devices 30 and 31 and the circuit diagram 15.

[0019] Terminal 40 extends to an outer surface of the housing 60. Current from the power module 1 is extracted from the power module 1 through terminal 40. Terminal 40 is made, for example, of a conductive material such as copper (Cu) or aluminum (Al). A coating layer (not shown), such as a layer of nickel (Ni) or gold (Au), may be provided on the surface of terminal 40.

[0020] The terminal 40 comprises a first end 41. The first end 41 is the end of the terminal 40 closest to the circuit board 12. The first end 41 comprises a first surface 42 and a second surface 43 opposite the first surface 42. The terminal 40 has a first surface 42 that is connected to the circuit pattern 20 via a connection 45. The connection 45 can be made, for example, of solder, a component sintered with fine silver particles, a similar component sintered with fine metal particles, a resin containing conductive fillers, or the like, or it can be a liquid-phase diffusion connection between the first surface 42 of the terminal 40 and the circuit pattern 20.

[0021] As in Fig. As shown in Figure 1, the connection 40 in the present embodiment is an outsert-type connection that can be separated from the housing 60. The connection 40 can also be an insert-type connection formed integrally with the housing 60.

[0022] The conductive connecting elements 50, 51, and 52 are made of a conductive material such as aluminum (Al) or copper (Cu). The conductive connecting element 50 bridges the semiconductor device 30 and the circuit diagram 20. The conductive connecting element 50 is, for example, a conductive wire bonded to an electrode of the semiconductor device 30 and the circuit diagram 20. The conductive connecting element 50 can be a conductive plate connected to an electrode of the semiconductor device 30 and the circuit diagram 20 using a connecting element such as solder. The conductive connecting element 51 bridges the semiconductor devices 30 and 31. The conductive connecting element 51 is, for example, a conductive wire bonded to an electrode of the semiconductor device 30 and an electrode of the semiconductor device 31.

[0023] The conductive connecting element 52 bridges the conductor pattern 20 and a second surface 43 of the first end 41 of the terminal 40. The conductive connecting element 52 is, for example, a conductive wire bonded to the conductor pattern 20 and a second surface 43 of the first end 41 of the terminal 40.

[0024] The housing 60 protects the circuit board 12 and the semiconductor devices 30 and 31. The housing 60 is attached to the base plate 10 with an adhesive (not shown). The housing 60 is made, for example, of an insulating resin such as epoxy resin or polyphenylene sulfide resin.

[0025] The sealing element 61 seals the semiconductor devices 30 and 31. The sealing element 61 is made, for example, of epoxy resin or a similar thermosetting resin, silicon gel, or a metal- or filler-containing insulating resin. The semiconductor devices 30 and 31, formed from the wide-bandgap semiconductor material, can reach a high temperature of approximately 200 °C while in operation. Even at such a high temperature, the sealing element 61, formed from the metal- or filler-containing insulating resin, is prevented from softening or deteriorating. This prevents a reduction in the reliability of the connections of the conductive connecting elements 50, 51, and 52.

[0026] The sealing element 61 can have a multilayer structure comprising a first sealing layer (not shown) covering the connections between semiconductor devices 30 and 31 and conductive connecting elements 50 and 51, and a second sealing layer (not shown) provided on top of the first sealing layer, the circuit board 12, semiconductor devices 30 and 31, and the base plate 10. The first sealing layer is formed from a material that is harder than the second sealing layer and reinforces the connections between semiconductor devices 30 and 31 and conductive connecting elements 50 and 51. For example, the first sealing layer is formed from epoxy resin, and the second sealing layer is formed from gel or the like.

[0027] Now, with reference to Fig. Section 4 describes an example of a method for manufacturing a power module 1 according to the present embodiment. The method for manufacturing the power module 1 according to the present embodiment comprises preparing the printed circuit board 12 (S1). The printed circuit board 12 comprises the insulating layer 13 and the circuit diagram 15. The insulating layer 13 has a main surface 13b. The circuit diagram 15 is provided on the main surface 13b. The circuit diagram 15 comprises a conductor pattern 20. The printed circuit board 12 may further comprise a conductor arrangement 14.

[0028] The method for manufacturing the power module 1 according to the present embodiment comprises connecting the semiconductor devices 30 and 31 to the printed circuit board 12 (S2). The semiconductor devices 30 and 31 are connected to the circuit diagram 15 at connections 33 and 34.

[0029] The method for manufacturing the power module 1 according to the present embodiment comprises attaching the printed circuit board 12 to the base plate 10 (S3). The conductor arrangement 14 of the printed circuit board 12 is connected to the base plate 10 at the connection 11.

[0030] The method for manufacturing the power module 1 according to the present embodiment comprises connecting the terminal 40 to the conductor pattern 20 (S4). The terminal 40 comprises a first end 41. The first end 41 of the terminal 40 comprises a first surface 42 and a second surface 43 opposite the first surface 42. The first surface 42 is connected to the conductor pattern 20. The connection 45 between the terminal 40 and the conductor pattern 20 can be made, for example, of solder, a molded part sintered with fine silver particles, a similar molded part sintered with fine metal particles, a resin containing conductive fillers, or the like, or it can be a liquid-phase diffusion connection between the first surface 42 of the terminal 40 and the conductor pattern 20.

[0031] The method for manufacturing the power module 1 according to the present embodiment comprises attaching the housing 60 to the base plate 10 (S5). The housing 60 is attached to the base plate 10 with an adhesive (not shown).

[0032] The method for manufacturing the power module 1 according to the present embodiment comprises providing conductive connecting elements 50 and 51 (S6). The conductive connecting element 50 bridges the circuit diagram 20 and the semiconductor device 30. The conductive connecting element 50 is connected to the circuit diagram 20 and the semiconductor device 30. If the conductive connecting element 50 is a conductive wire, the conductive wire is bonded to the circuit diagram 20 and the semiconductor device 30. The conductive connecting element 50 bridges the semiconductor devices 30 and 31. The conductive connecting element 51 is connected to the semiconductor devices 30 and 31. If the conductive connecting element 51 is a conductive wire, the conductive wire is bonded to the semiconductor devices 30 and 31.

[0033] The method for manufacturing the power module 1 according to the present embodiment comprises bridging the second surface 43 of the terminal 40 and the conductor pattern 20 with the conductive connecting element 52 (S7). The conductive connecting element 52 is connected to the second surface 43 of the terminal 40 and the conductor pattern 20. If the conductive connecting element 52 is a conductive wire, the conductive wire is bonded to the second surface 43 of the terminal 40 and the conductor pattern 20.

[0034] The method for manufacturing the power module 1 according to the present embodiment comprises providing the sealing element 61 (S8). The sealing element 61 is provided, for example, by introducing a sealing material into a space enclosed by the housing 60 and the base plate 10.

[0035] As outlined above, the sealing element 61 can have a multilayer structure comprising a first sealing layer (not shown) and a second sealing layer (not shown). For example, the sealing element 61 having the multilayer structure can be formed by applying a first sealing material to connections between semiconductor devices 30 and 31 and conductive connecting elements 50 and 51, and subsequently applying a second sealing material to the first sealing material, the circuit board 12, semiconductor devices 30 and 31, and the base plate 10.

[0036] A variation of the method for manufacturing a power module 1 according to the present embodiment is now described. Steps S2 and S3 can be performed simultaneously. Step S3 can be performed before step S2. If the conductive connecting elements 50, 51, and 52 are identical conductive connecting elements, steps S6 and S7 can be performed simultaneously.

[0037] A function of the power module 1 according to the present embodiment will now be described. While the power module 1 is in operation, the semiconductor devices 30 and 31 generate heat, and the semiconductor devices 30 and 31, the terminal 40, and the connection 45 are at a high temperature. Conversely, while the power module 1 is not in operation, the semiconductor devices 30 and 31 do not generate heat, and the semiconductor devices 30 and 31, the terminal 40, and the connection 45 are at a low temperature. Such a temperature cycle repeatedly subjects the connection 45 to thermal stress. A crack is caused at one end of the connection 45, and the crack propagates into the connection 45. This can lead to the connection 45 detaching from the circuit diagram 20.

[0038] However, the power module 1 has a terminal 40, which is electrically connected to the conductor pattern 20 not only by the connection 45 but also by the conductive connecting element 52. The conductive connecting element 52 bridges the second surface 43 of the terminal 40 and the conductor pattern 20 and is deformable. The conductive connecting element 52 deforms in response to the temperature cycle, and consequently, the thermal stress acting on the connection between the conductive connecting element 52 and the terminal 40 and the connection between the conductive connecting element 52 and the conductor pattern 20 is low. The connection between the conductive connecting element 52 and the terminal 40 and the connection between the conductive connecting element 52 and the conductor pattern 20 exhibit greater resistance to the temperature cycle than the connection 45.Consequently, even if connection 45 becomes detached from the conductor pattern 20, terminal 40 remains electrically connected to the conductor pattern 20 via the conductive connecting element 52. This can prevent a failure of the power module 1.

[0039] Furthermore, a portion of the current flowing through the power module 1 flows through the conductive connecting element 52, thus reducing the current flowing through the connection 45. This prevents an increase in the temperature of the connection 45 caused during operation of the power module 1, and makes it less likely that the connection 45 will detach from the conductor 20. This can prevent a failure of the power module 1.

[0040] If terminal 40, conductor pattern 20, and conductive connecting element 52 are made of the same material, the thermal stress acting on the connection between the conductive connecting element 52 and terminal 40, as well as on the connection between the conductive connecting element 52 and conductor pattern 20, is further reduced. Consequently, even if connection 45 detaches from conductor pattern 20 via the conductive connecting element 52, terminal 40 remains electrically connected to conductor pattern 20. This can prevent a failure of power module 1.

[0041] If the terminal 40, the circuit pattern 20, and the conductive connector 52 are made of copper (Cu), they all have the same hardness. Consequently, the conductive connector 52 does not perforate the terminal 40 or the circuit pattern 20, even when ultrasonic bonding is used to connect them, and the conductive connector 52 is thus satisfactorily bonded to the terminal 40 and the circuit pattern 20. This improves the reliability of the connection between the conductive connector 52 and the terminal 40, and the connection between the conductive connector 52 and the circuit pattern 20. This, in turn, improves the reliability of the power module 1.

[0042] The connection 45 has a contact area that is larger than that between the terminal 40 and the conductive connecting element 52 and that between the conductive connecting element 52 and the conductor pattern 20. If there is no crack in the connection 45, the electrical resistance between the terminal 40 and the conductor pattern 20 via the connection 45 is lower than that between the terminal 40 and the conductor pattern 20 via the conductive connecting element 52. If a crack develops in the connection 45, the electrical resistance between the terminal 40 and the conductor pattern 20 increases. Furthermore, if the connection 45 detaches from the conductor pattern 20, the electrical resistance between the terminal 40 and the conductor pattern 20 increases rapidly.For example, the electrical resistance between a part of the terminal 40 extending outside the housing 60 and the conductor pattern 20 can be monitored to detect a deterioration of the condition of the connection 45.

[0043] Now, the power module 1 is described according to a variation of the present embodiment. As in the Fig. 5 and Fig. As shown in Figure 6, the conductive connecting element 52 can be a conductive strip. Furthermore, the base plate 10 and the connection 11 can be omitted, and the conductor arrangement 14 can function as the base plate 10.

[0044] The operation of the power module 1 according to the present embodiment will now be described. The power module 1 according to the present embodiment comprises a printed circuit board 12, a semiconductor device 30, a terminal 40, and a first conductive connecting element (the conductive connecting element 52). The printed circuit board 12 comprises the insulating layer 13 with the main surface 13b and the circuit diagram 15 provided on the main surface 13b. The semiconductor device 30 is connected to the circuit diagram 15. The circuit diagram 15 comprises a first circuit diagram (the circuit diagram 20). The terminal 40 comprises a first end 41. The first end 41 of the terminal 40 comprises a first surface 42 connected to the first circuit diagram and a second surface 43 opposite the first surface 42. The first conductive connecting element bridges the second surface 43 of the terminal 40 and the first circuit diagram.

[0045] The power module 1 has terminal 40, which is electrically connected to the first conductor pattern not only via the connection 45 between the first surface 42 of terminal 40 and the first conductor pattern (conductor pattern 20), but also via the first conductive connecting element (conductive connecting element 52). Consequently, even if the connection 45 detaches from the first conductor pattern, terminal 40 remains electrically connected to the first conductor pattern via the first conductive connecting element. This improves the reliability of the power module 1.

[0046] Terminal 40 is not connected to semiconductor device 30, but instead to the first circuit diagram (circuit diagram 20). This prevents an increase in manufacturing time and labor required to connect terminal 40, even if the number of semiconductor devices 30 is increased to increase the capacity of power module 1. This allows power module 1 to be manufactured more efficiently.

[0047] The first conductive connecting element (connecting element 52) ​​is connected to terminal 40 on the second surface 43 of terminal 40, opposite the first surface 42 of terminal 40, which is connected to the first conductor pattern (conductor pattern 20). This allows terminal 40 and consequently the power module 1 to be reduced in size.

[0048] The power module 1 according to the present embodiment has the first conductive connecting element (the conductive connecting element 52) ​​in the form of a conductive wire or a conductive strip.

[0049] Consequently, even if the connection 45 between the first surface 42 of the terminal 40 and the first conductor pattern (the conductor pattern 20) detaches from the first conductor pattern (the conductor pattern 20), the terminal 40 remains electrically connected to the first conductor pattern (the conductor pattern 20) via the first conductive connecting element (the conductive connecting element 52). This improves the reliability of the power module 1.

[0050] The power module 1 according to the present embodiment has the first conductor pattern (the conductor pattern 20), the terminal 40 and the first conductive connecting element (the conductive connecting element 52), formed from copper (Cu).

[0051] The first conductive connection element can be satisfactorily connected or bonded to the first conductive connection element (conductor 20) and the copper (Cu) terminal 40, even if the first conductive connection element (conductor 52) is made of copper (Cu), which has a higher strength than aluminum. The fact that the first conductive connection element is made of a material with higher strength and reliability increases the reliability of power module 1.

[0052] The method for manufacturing the power module 1 according to the present embodiment comprises preparing the printed circuit board 12 (S1). The printed circuit board 12 comprises the insulating layer 13 with the main surface 13b and the circuit diagram 15 provided on the main surface 13b. The circuit diagram 15 comprises the first circuit diagram (the circuit diagram 20). The method for manufacturing the power module 1 according to the present embodiment comprises connecting the semiconductor device 30 to the circuit diagram 15 (S2) and connecting the terminal 40 to the first circuit diagram (S4). The terminal 40 comprises a first end 41. The first end 41 of the terminal 40 comprises a first surface 42 connected to the first circuit diagram and a second surface 43 opposite the first surface 42.The method for manufacturing the power module 1 according to the present embodiment comprises bridging the second surface 43 of the terminal 40 and the first conductor pattern with the first conductive connecting element (S7).

[0053] Consequently, even if the connection 45 between the first surface 42 of the terminal 40 and the first conductor pattern (the conductor pattern 20) detaches from the first conductor pattern (the conductor pattern 20), the terminal 40 remains electrically connected to the first conductor pattern (the conductor pattern 20) via the first conductive connecting element (the conductive connecting element 52). This improves the reliability of the power module 1. Second embodiment.

[0054] Now, with reference to Fig. 7 a power module 1 according to a second embodiment is described. While the power module 1 according to the present embodiment has a configuration similar to that of the power module 1 of the first embodiment and can achieve a similar effect, the power module according to the present embodiment differs from that of the first embodiment mainly as follows.

[0055] The circuit diagram 15 further comprises a circuit diagram 21 and a circuit diagram 22. The circuit diagrams 20, 21, and 22 are spaced apart from each other. The circuit diagrams 21 and 22 may be spaced apart from that part of the circuit diagram 15 to which the semiconductor devices 30 and 31 are connected. Circuit diagram 20 is, for example, a connecting conductive contact pad to which terminal 40 is connected. The circuit diagrams 21 and 22 are, for example, conductive contact pads used for testing purposes.

[0056] The power module 1 according to the present embodiment further comprises conductive connecting elements 53 and 54. The conductive connecting element 53 bridges the conductor pattern 21 and a second surface 43 of the first end 41 of the terminal 40. The conductive connecting element 53 is, for example, a conductive wire bonded to the conductor pattern 21 and a second surface 43 of the first end 41 of the terminal 40. The conductive connecting element 54 bridges the conductor patterns 20 and 22. The conductive connecting element 54 is, for example, a conductive wire bonded to conductor patterns 20 and 22.

[0057] A function of the power module 1 according to the present embodiment will now be described. The connection 45 has a contact area that is larger than that between the terminal 40 and the conductive connecting element 52 and that between the conductive connecting element 52 and the conductor pattern 20. If there is no crack in the connection 45, the electrical resistance between the terminal 40 and the conductor pattern 20 via the connection 45 is lower than that between the terminal 40 and the conductor pattern 20 via the conductive connecting element 52. The conductor pattern 20 is electrically connected to the conductor pattern 21 via the connection 45, the conductive connecting element 52, the first end 41 of the terminal 40, and the conductive connecting element 53. If a crack develops in the connection 45, the electrical resistance between the conductor patterns 20 and 21 increases.Monitoring the electrical resistance between conductor patterns 20 and 21 allows for the detection of a deterioration of the condition of connection 45 (or the extent of the development of a crack in it).

[0058] Furthermore, the conductor pattern 21 is electrically connected to the conductor pattern 22 via the conductive connecting element 53, the first end 41 of the terminal 40, the connection 45, the conductor pattern 20, and the conductive connecting element 54. Consequently, if a crack develops in the connection 45, the electrical resistance between the conductor patterns 21 and 22 also increases. Monitoring the electrical resistance between the conductor patterns 21 and 22 allows for the detection of a deterioration in the condition of the connection 45 (or the extent of crack development within it).

[0059] In a variation of the present embodiment, at least one of the conductive connecting elements 52, 53 and 54 can be a conductive strip. For example, the conductive connecting elements 52 and 53, as shown in Fig. Figure 8 shows conductive strips, and the conductive connecting element 54 can be a conductive wire. As shown in Fig. As shown in Figure 9, the conductive connecting element 52 can be a conductive strip, and the conductive connecting elements 53 and 54 can be conductive wires. The conductive connecting elements 52, 53, and 54 can be conductive strips.

[0060] In addition to an effect of the power module 1 according to the first embodiment, the power module 1 according to the present embodiment has the following effect.

[0061] The power module 1 according to the present embodiment further comprises a second conductive connecting element (the conductive connecting element 53). The conductor diagram 15 comprises a second conductor diagram (the conductor diagram 21), spaced apart from the first conductor diagram (the conductor diagram 20). The second conductive connecting element bridges the second surface 43 of the terminal 40 and the second conductor diagram.

[0062] Monitoring the electrical resistance between the first conductor pattern (the conductor pattern 20) and the second conductor pattern (the conductor pattern 21) allows for the detection of a deterioration of the condition of the connection 45 (or the extent of the development of a crack in it).

[0063] The power module 1 according to the present embodiment further comprises a third conductive connecting element (the conductive connecting element 54). The conductor diagram 15 comprises a third conductor diagram (the conductor diagram 22), spaced apart from the first conductor diagram (the conductor diagram 20) and the second conductor diagram (the conductor diagram 21). The third conductive connecting element bridges the first conductor diagram and the third conductor diagram.

[0064] Monitoring the electrical resistance between the second conductor pattern (the conductor pattern 21) and the third conductor pattern (the conductor pattern 22) allows detection of a deterioration of the condition of the connection 45 between the first surface 42 of the terminal 40 and the first conductor pattern (the conductor pattern 20) (or the extent of the development of a crack therein). Third embodiment.

[0065] Now, with reference to the Fig. 10 and Fig. 11 a power module 1 according to a third embodiment is described. While the power module 1 according to the present embodiment has a configuration similar to that of the power module 1 of the first embodiment and can achieve a similar effect, the power module according to the present embodiment differs from that of the first embodiment mainly as follows.

[0066] The circuit diagram 15 further comprises a circuit diagram 20b, a circuit diagram 21, and a circuit diagram 22. The circuit diagrams 20, 20b, 21, and 22 are spaced apart from each other. The circuit diagrams 20b, 21, and 22 may be spaced apart from that part of the circuit diagram 15 to which the semiconductor devices 30 and 31 are connected. Circuit diagrams 20 and 20b are, for example, connecting conductive contact pads to which terminal 40 is connected. Circuit diagrams 21 and 22 are, for example, conductive contact pads used for testing purposes.

[0067] The terminal 40 further comprises a second end 41b. The second end 41b is spaced apart from and adjacent to the first end 41. The first end 41 and the second end 41b are the ends of the terminal 40 closest to the circuit board 12. The second end 41b of the terminal 40 comprises a third surface 42b and a fourth surface 43b opposite the third surface 42b. The terminal 40 has a third surface 42b which is connected to the circuit pattern 20b via a junction 45b. The junction 45b may be made, for example, of solder, a component sintered with fine silver particles, a similar component sintered with fine metal particles, a resin containing conductive fillers, or the like, or it may be a liquid-phase diffusion connection between the third surface 42b of the terminal 40 and the circuit pattern 20b. Connection 45b can be identical to connection 45.

[0068] The power module 1 according to the present embodiment further comprises conductive connecting elements 53 and 54. The conductive connecting element 53 bridges the conductor pattern 21 and a fourth surface 43b of the second end 41b of the terminal 40. The conductive connecting element 53 is, for example, a conductive wire bonded to the conductor pattern 21 and a fourth surface 43b of the second end 41b of the terminal 40. The conductive connecting element 54 bridges the conductor patterns 20b and 22. The conductive connecting element 54 is, for example, a conductive wire bonded to conductor patterns 20b and 22.

[0069] A function of the power module 1 according to the present embodiment will now be described. In the present embodiment, monitoring the electrical resistance between two of the conductor patterns 20, 21 and 22 allows detection of the deterioration of the connection 45 (or the extent of crack development therein).

[0070] Specifically, connection 45 has a contact area that is larger than that between terminal 40 and the conductive connecting element 52 and that between the conductive connecting element 52 and the conductor pattern 20. If there is no crack in connection 45, the electrical resistance between terminal 40 and the conductor pattern 20 via connection 45 is lower than that between terminal 40 and the conductor pattern 20 via the conductive connecting element 52. The conductor pattern 20 is electrically connected to the conductor pattern 21 via connection 45, the conductive connecting element 52, the first end 41 of terminal 40, the second end 41b of terminal 40, and the conductive connecting element 53. If a crack develops in connection 45, the electrical resistance between the conductor patterns 20 and 21 increases.Monitoring the electrical resistance between conductor patterns 20 and 21 allows for the detection of a deterioration of the condition of connection 45 (or the extent of the development of a crack in it).

[0071] Furthermore, the circuit diagram 20 is electrically connected to the circuit diagram 22 via the connection 45, the conductive connecting element 52, the first end 41 of the terminal 40, the second end 41b of the terminal 40, the connection 45b, the circuit diagram 20b, and the conductive connecting element 54. If a crack develops in at least one of the connections 45 or 45b, the electrical resistance between the circuit diagrams 20 and 22 increases. Monitoring the electrical resistance between the circuit diagrams 20 and 22 allows for the detection of a deterioration in the condition of at least one of the connections 45 or 45b (or the extent of crack development therein).

[0072] The circuit diagram 21 is electrically connected to the circuit diagram 22 via the conductive connecting element 53, the second end 41b of the terminal 40, the connection 45b, the circuit diagram 20b, and the conductive connecting element 54. If a crack develops in the connection 45b, the electrical resistance between the circuit diagrams 21 and 22 increases. Monitoring the electrical resistance between the circuit diagrams 21 and 22 allows for the detection of a deterioration in the condition of the connection 45b (or the extent of crack development in it).

[0073] In a variation of the present embodiment, at least one of the conductive connecting elements 52, 53 and 54 can be a conductive strip.

[0074] In addition to an effect of the power module 1 according to the first embodiment, the power module 1 according to the present embodiment has the following effect.

[0075] The power module 1 according to the present embodiment further comprises the second conductive connecting element (the conductive connecting element 53) and the third conductive connecting element (the conductive connecting element 54). The conductor diagram 15 comprises the second conductor diagram (the conductor diagram 20b), the third conductor diagram (the conductor diagram 21), and a fourth conductor diagram (the conductor diagram 22). The first conductor diagram (the conductor diagram 20), the second conductor diagram, the third conductor diagram, and the fourth conductor diagram are spaced apart from each other. The terminal 40 comprises the second end 41b, spaced apart from the first end 41 and adjacent to the first end 41. The second end 41b of the terminal 40 comprises a third surface 42b, which is connected to the second conductor diagram, and a fourth surface 43b opposite the third surface 42b. The second conductive connecting element bridges the fourth surface 43b and the third conductor diagram.The third conductive connecting element bridges the second conductor pattern and the fourth conductor pattern.

[0076] Consequently, monitoring the electrical resistance between two of the first conductor pattern (conductor pattern 20), the third conductor pattern (conductor pattern 21) and the fourth conductor pattern (conductor pattern 22) allows detection of a deterioration of the condition of the connection 45 between the first surface 42 of the terminal 40 and the first conductor pattern (conductor pattern 20) (or the extent of the development of a crack in the connection) or a deterioration of the condition of the connection 45b between the third surface 42b of the terminal 40 and the second conductor pattern (conductor pattern 20b) (or the extent of the development of a crack in the connection). Fourth embodiment.

[0077] The present embodiment applies any one of the power modules 1 of the first to third embodiments and their variations to a power converter device. Although the present disclosure is not limited to a specific power converter device, any one of the power modules 1 of the first to third embodiments and their variations, applied to a three-phase inverter, is described below as a fourth embodiment.

[0078] Fig. Figure 12 shows a power conversion system consisting of a power supply 100, a power converter 200, and a load 300. The power supply 100 is a DC power supply that provides DC current to the power converter 200. Although not specifically limited, the power supply 100 could, for example, include a DC system, a solar battery, or a storage battery, or it could include a rectifier circuit or an AC-to-DC converter connected to an AC system. The power supply 100 could include a DC-to-DC converter that receives DC current from a DC system and converts the received DC current into the specified current.

[0079] The power converter unit 200 is a three-phase inverter connected between the power supply 100 and the load 300. It receives direct current supplied by the power supply 100, converts the received direct current into alternating current, and supplies the alternating current to the load 300. As shown in Fig. As shown in Figure 12, the power converter device 200 comprises a main conversion circuit 201, which converts direct current to alternating current and outputs the alternating current, and a control circuit 203, which outputs a control signal to the main conversion circuit 201 in order to control the main conversion circuit 201.

[0080] The Load 300 is a three-phase electric motor driven by alternating current supplied by the converter unit 200. It should be noted that the Load 300 is not limited to a specific application; instead, it is an electric motor that can be mounted on a variety of electrical devices and is used, for example, as an electric motor for a hybrid vehicle, an electric vehicle, a rail vehicle, an elevator, or an air conditioning unit.

[0081] The power converter device 200 is described in detail below. The main conversion circuit 201 comprises a switching device (not shown) and a freewheeling diode (not shown). The main conversion circuit 201 accepts direct current supplied by the power supply 100, and when the switching device switches the voltage supplied by the power supply 100, the main conversion circuit 201 converts the direct current to alternating current and supplies the alternating current to the load 300. While there are a variety of types of specific circuit configurations for the main conversion circuit 201, the main conversion circuit 201 according to the present embodiment is a two-stage, three-phase full-bridge circuit and can comprise six switching devices and six freewheeling diodes connected antiparallel to their respective switching devices.Like any switching device and any freewheeling diode of the main conversion circuit 201, the semiconductor devices 30 and 31 integrated into any of the power modules 1 of the first to third embodiments and their variations can be used. Any of the power modules 1 of the first to third embodiments and their variations can be used as a power module 202 forming the main conversion circuit 201. The six switching devices are connected in pairs in series to configure a vertical arm, and each vertical arm configures one of the phases (a U-phase, a V-phase, and a W-phase) of the full-bridge circuit. Each vertical arm has one output terminal; that is, the main conversion circuit 201 has three output terminals connected to the load 300.

[0082] Furthermore, the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching device. The drive circuit can be integrated into the power module 202 or can be provided outside of the power module 202. The drive circuit generates a drive signal for driving the switching devices contained in the main conversion circuit 201 and supplies the drive signal to a control electrode of each switching device of the main conversion circuit 201. Specifically, in response to a control signal output by the control circuit 203, a drive signal to turn on a switching device and a drive signal to turn off a switching device are output to the control electrode of each switching device.

[0083] The control circuit 203 controls the switching devices of the main conversion circuit 201, ensuring that current is supplied to the load 300. Specifically, a time (an ON time) for which each switching device of the main conversion circuit 201 should be switched on is calculated based on the current to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by a PWM controller that modulates an ON time of the switching device depending on the voltage to be output to the load 300. A control command (a control signal) is issued to the drive circuit comprising the main conversion circuit 201, so that an ON signal is issued to a switching device at the given time to switch it on, and an OFF signal is issued to a switching device at the given time to switch it off.In response to this control signal, the drive circuit outputs the ON signal or the OFF signal as a drive signal to the control electrode of each switching device.

[0084] In the power converter device 200 according to the present embodiment, any one of the power modules 1 of the first to third embodiments and their variations is used as a power module 202 contained in the main conversion circuit 201. Consequently, the reliability of the power converter device 200 according to the present embodiment is improved.

[0085] While the present embodiment describes an example in which the present disclosure is applied to a two-stage three-phase inverter, this is not exclusive, and the present disclosure is applicable to a variety of types of power converter devices. While the present embodiment has been applied to a two-stage power converter device, it can also be applied to a three-stage power converter device or a multi-stage power converter device. If the power converter device supplies current to a single-phase load, the present disclosure can be applied to a single-phase inverter. If the power converter device supplies current to a DC load or the like, the present disclosure can be applied to a DC-DC inverter or an AC-DC inverter.

[0086] A power converter device to which the present disclosure applies is not limited to a case in which a load is an electric motor and can, for example, be integrated into a power supply device for an electric spark generator or a laser beam machine, or a power supply device for an induction cooktop or a wireless power transmission system. A power converter device to which the present disclosure applies can also be used as an energy conditioner for a photovoltaic power generation system, an energy storage system, or the like.

[0087] It is understood that the first to fourth embodiments and their variations disclosed herein are for illustrative purposes only and are in no way limiting. Unless otherwise stated, at least two of the first to fourth embodiments and their variations disclosed herein may be combined. The scope of protection of this disclosure is not defined by the foregoing description but by the terms of the claims and is intended to encompass, within the meaning and scope of protection, any modification equivalent to the terms of the claims. REFERENCE MARK LIST

[0088] 1 Power module, 10 Base plate, 11, 33, 34, 45, 45b Connection, 12 Circuit board, 13 Insulating layer, 13a, 13b Main surface, 14, 20b Conductor arrangement, 15 Conductor diagram, 20, 20b, 21, 22 Conductor diagram, 30, 31 Semiconductor device, 40 Terminal, 41 First end, 41b Second end, 42 First surface, 42b Third surface, 43 Second surface, 43b Fourth surface, 50, 51, 52, 53, 54 Conductive connecting element, 60 Housing, 61 Sealing element, 100 Power supply, 200 Converter device, 201 Main conversion circuit, 202 Power module, 203 Control circuit, 300 Load. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2001-237359 [0002, 0003]

Claims

[1] Performance module, comprising: a printed circuit board comprising an insulating layer with a main surface and a circuit diagram provided on the main surface; a semiconductor device connected to the conductor circuit diagram; a connection, comprising a first end; and a first conductive connecting element, where the first circuit diagram includes a first circuit diagram, the first end of the connection, which includes a first surface connected to the first conductor pattern and a second surface opposite the first surface, the first conductive connecting element that bridges the second surface and the first conductor pattern. [2] Power module according to claim 1, further comprising a second conductive connecting element, wherein the circuit diagram includes a second circuit diagram, spaced apart from the first circuit diagram, and the second conductive connecting element bridges the second surface and the second conductor pattern. [3] Power module according to claim 2, further comprising a third conductive connecting element, wherein The circuit diagram includes a third circuit diagram, spaced apart from the first and second circuit diagrams, and The third conductive connecting element bridges the first conductor pattern and the third conductor pattern. [4] Power module according to claim 1, further comprising: a second conductive connecting element; and a third conductive connecting element, wherein the circuit diagram includes a second circuit diagram, a third circuit diagram and a fourth circuit diagram, and the first circuit diagram, the second circuit diagram, the third circuit diagram and the fourth circuit diagram are spaced apart from each other, the connection includes a second end, spaced apart from the first end and adjacent to the first end, the second end of the connection includes a third surface connected to the second conductor pattern and a fourth surface opposite the third surface, the second conductive connecting element bridges the fourth surface and the third conductor pattern, and The third conductive connecting element bridges the second conductor pattern and the fourth conductor pattern. [5] Power module according to any one of claims 1 to 4, wherein the first conductive connecting element is a conductive wire or a conductive tape. [6] Power module according to any one of claims 1 to 5, wherein the first conductor pattern, the connection and the first conductive connecting element are made of copper. [7] Method for manufacturing a power module, comprising: Preparing a printed circuit board comprising an insulating layer with a main surface and a conductor circuit provided on the main surface, wherein the conductor circuit comprises a first conductor diagram; Connecting a semiconductor device to the circuit diagram; Connecting a terminal to the first conductor pattern, wherein the terminal comprises a first end, the first end of the terminal comprising a first surface connected to the first conductor pattern and a second surface opposite the first surface; and Bridging the second surface and the first conductor pattern with a first conductive connecting element. [8] Power converter assembly, comprising: a main conversion circuit with the power module according to any one of claims 1 to 6, for converting received current and outputting the converted current; and a control circuit for outputting a control signal to the main conversion circuit in order to control the main conversion circuit.

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