Components for handling increased power

Abstract

A component assembly can include an electrical component mounted on a heat sink component to mechanically stabilize the electrical component, allowing it to be relatively thin. For example, the heat sink component can include a heat sink substrate comprised of a thermally conductive, electrically non-conductive material. The heat sink substrate can have a first surface and a second surface opposite the first, with an electrically conductive layer formed over the second surface of the heat sink substrate. The electrical component can also include a component substrate with a first surface and a second surface opposite the first, and an electrically conductive structure can be formed over the first surface of the component substrate. The second surface of the component substrate can be adjacent to the first surface of the heat sink substrate.

Description

Related registration

[0001] The present application is based on and claims priority from the preliminary US patent application serial no. 63 / 503,500 filed on May 22, 2023, to which express reference is hereby made. background

[0002] Electrical circuits, such as power amplifier circuits, generate heat during normal operation. This heat buildup can undesirably increase the temperature of the various components within the circuit. If this heat is not adequately dissipated, for example, by transferring it to a heat sink, the electrical device can overheat, leading to damage to the electrical component. Furthermore, some components may utilize a thicker substrate to ensure structural integrity, which can impede heat dissipation and thus limit the component's power handling capacity. Improved heat dissipation would be beneficial in this field. Brief description

[0003] According to one embodiment of the present invention, a component assembly comprises a heat sink component including a heat sink substrate, which is a thermally conductive material that is electrically non-conductive. The heat sink substrate has a first surface and a second surface opposite the first surface. The heat sink component further comprises a second, electrically conductive layer formed over the second surface of the heat sink substrate. The component assembly also includes an electrical component, which comprises a component substrate with a first surface and a second surface opposite the first surface, as well as an electrically conductive structure formed over the first surface of the component substrate. The electrical component is arranged on the heat sink component such that the second surface of the component substrate is adjacent to the first surface of the heat sink substrate.

[0004] According to a further embodiment of the present invention, a method for forming a component assembly comprises applying a conductive material to a second surface of a heat sink substrate to form a second electrically conductive layer on the heat sink substrate. The heat sink substrate comprises a thermally conductive material that is electrically non-conductive, and the second surface of the heat sink substrate is opposite the first surface of the heat sink substrate. The method also comprises forming an electrically conductive structure over a first surface of a component substrate of an electrical component. The component substrate has a second surface opposite the first surface. The component substrate is arranged on the heat sink substrate such that the second surface of the component substrate is adjacent to the first surface of the heat sink substrate. Brief description of the drawings

[0005] The remainder of the description, with reference to the accompanying drawings, provides a complete and reproducible disclosure of the present invention, including its best implementation, in particular for the person skilled in the art; the following applies: Fig. Figure 1 is a perspective view of a component assembly according to aspects of the present disclosure; Fig. Figure 2 is a perspective view of a heat sink component of the component assembly of Fig. 1 according to aspects of the present revelation; Fig. Figure 3 is a perspective view of another embodiment of the heat sink component of Fig. 2 according to aspects of the present revelation; Fig. Figure 4 is a perspective view of an electrical component of the component assembly of Fig. 1 according to aspects of the present revelation; Fig. Figure 5 is a perspective view of the component assembly of Fig. 1 prior to reducing the thickness of a component substrate of the electrical component and prior to applying an electrically conductive structure to an exposed surface of the electrical component according to aspects of the present disclosure; Fig. Figure 6 is a perspective view of the component assembly of Fig. 1, which is assembled with a device according to aspects of the present disclosure; and Fig. Figure 7 is a flowchart showing a method for forming a component assembly according to aspects of the present disclosure.

[0006] Where reference numerals are used multiple times in this description and the drawings, they are intended to represent the same or analogous features or elements of the present invention. DETAILED DESCRIPTION

[0007] The person skilled in the art should be aware that the present discussion is only a description of exemplary embodiments and is not intended to limit the broader aspects of the present invention, these broader aspects being embodied in the exemplary construction.

[0008] In general, the present invention relates to relatively thin components with functions for controlling heat flow away from the components and ensuring the mechanical integrity of the components. For example, a component assembly may include an electrical component arranged on a heat sink component, which can help dissipate heat from the electrical component while simultaneously providing stability to the relatively thin electrical component. One or more electrically conductive layers may extend over one or more surfaces of the heat sink component or the electrical component, which can provide additional mechanical integrity to the assembly and also facilitate electrical and thermal connectivity between the electrical component and the heat sink component.The electrical component can have such a thickness that, for example, the ratio of the total thickness of the assembly to the thickness of the electrical component is at least approximately 2.

[0009] By modifying the substrate of the electrical component to reduce its thickness, for example, after bonding the substrate to a heat sink component as described here, the electrical component can be thinned to significantly greater degrees than previously possible, even to relatively extreme values. The heat sink component, which may contain metal layers or similar materials, increases the mechanical strength of the assembly, allowing the thickness of the electrical component to be reduced to such extreme values ​​without compromising the functionality or lifespan of the part. Furthermore, the thinner substrate of the electrical component enables faster heat transfer through the part, thus controlling heat flow more effectively.The substrate of the heat sink component can be selected to further facilitate, rather than impede, the heat flow from the electrical component. Since a higher power output through the component increases its temperature or the heat within it, more effective heat flow management can increase the component's power handling capacity. In other words, faster heat dissipation from the component can enable it to handle a higher power output.

[0010] In some embodiments, a component assembly comprises a heat sink component having a heat sink substrate that includes a thermally conductive, electrically non-conductive material. An electrically conductive layer can be formed over one surface of the heat sink substrate. In some embodiments, a further electrically conductive layer is formed over an opposite surface of the heat sink substrate. Thus, the heat sink component can comprise a first electrically conductive layer formed over a first surface of the heat sink substrate and a second electrically conductive layer formed over a second surface of the heat sink substrate, the second surface being opposite to the first.It is understood that in some embodiments the heat sink component may comprise only one electrically conductive layer, while in other embodiments the heat sink component may comprise at least two electrically conductive layers.

[0011] In some embodiments, the electrical component comprises a component substrate with a first surface and a second surface opposite the first surface. The electrical component can be arranged on the heat sink component such that the second surface of the component substrate adjoins the first surface of the heat sink substrate.

[0012] In some embodiments, the electrical component comprises an electrically conductive layer formed over the second surface of the component substrate. In such embodiments, the electrically conductive layer of the electrical component may contact the first surface of the heat sink component or the first electrically conductive layer of the heat sink component in embodiments where the first electrically conductive layer is formed over the first surface of the heat sink substrate.

[0013] In some embodiments, the first electrically conductive layer of the heat sink component is connected to the electrically conductive layer of the electrical component. That is, if the electrical component is arranged on the heat sink component, the two components can be connected to each other. In embodiments comprising the first electrically conductive layer of the heat sink component and the electrically conductive layer of the electrical component, the first electrically conductive layer can be bonded to the electrically conductive layer of the electrical component using an adhesive, for example, a polymer adhesive such as an epoxy resin or any suitable adhesive.In other embodiments, the first electrically conductive layer is a first metal layer, and the electrically conductive layer of the electrical component is a component metal layer, and the first metal layer may be connected to the component metal layer by a metallized connection.

[0014] In some embodiments, at least one electrically conductive layer extends over the entire respective area over which the layer is formed. For example, the first electrically conductive layer extends over the entire first area of ​​the heat sink substrate, the second electrically conductive layer extends over the entire second area of ​​the heat sink substrate, and / or the electrically conductive layer of the electrical component extends over the entire second area of ​​the component substrate. Therefore, one or more of the electrically conductive layers may extend only over a portion, and not the entire, of the area over which the layer is formed. For example, each electrically conductive layer may be spaced apart from one or more edges that define the area over which the layer is formed.

[0015] In some embodiments, a gap for receiving an adhesive is formed in at least one of the first electrically conductive layers or in the electrically conductive layer of the electrical component. In particular, in embodiments of the heat sink component comprising the first electrically conductive layer, a gap, opening, depression, or the like may be formed or defined in the conductive material of the layer. Such a gap, opening, depression, etc., defines a space for receiving adhesive, so that when the electrical component is positioned on the first electrically conductive layer, at least a portion of the adhesive remains in place to bond the heat sink component and the electrical component together.In other embodiments, for example, embodiments in which the first electrically conductive layer of the heat sink component is omitted, such a gap, etc., can be formed in the electrically conductive layer that extends over the second surface of the component substrate that contacts the heat sink component when the electrical component is mounted on the heat sink component. It is clear that without such a space for the adhesive, the adhesive would extend only over the contact surfaces of the heat sink component and the electrical component and could be forced outwards to the boundaries of the components when the components are brought together.

[0016] In some embodiments, one or more vias are formed in the heat sink substrate. For example, at least one via can extend through the heat sink substrate from the first electrically conductive layer to the second electrically conductive layer. In some embodiments, the at least one via contains a conductive material to electrically connect the first and second electrically conductive layers. For example, the at least one via can be metallized or otherwise lined with the conductive material.

[0017] As described here, the original first surface of the conductive substrate, which is free of electrically conductive material, can be machined to reduce the thickness of the component substrate. For example, the component substrate can be ground along its original first surface to reduce its thickness. Other techniques for removing substrate material can also be used.

[0018] After processing to reduce the thickness of the component substrate, the component substrate can have a thickness of less than approximately 600 µm (micrometers). In some embodiments, the component substrate can have a thickness of less than approximately 500 µm, in some embodiments less than approximately 250 µm, in some embodiments less than approximately 125 µm, and in some embodiments less than approximately 75 µm. The thickness of the component substrate can be in a range of approximately 50 µm to approximately 600 µm, for example, in a range of approximately 75 µm to approximately 500 µm, in a range of approximately 100 µm to approximately 400 µm, or in a range of approximately 150 µm to approximately 300 µm.

[0019] In some embodiments, the heat sink substrate can have a thickness of at least approximately 100 µm to approximately 1500 µm. For example, the thickness of the heat sink substrate can be approximately 100 µm or more, approximately 125 µm or more, approximately 250 µm or more, approximately 500 µm or more, approximately 1000 µm or more, or approximately 1250 µm or more. In some embodiments, the thickness of the heat sink substrate can be in a range of about 100 µm to about 1500 µm, for example in a range of about 150 µm to about 1250 µm, in a range of about 250 µm to about 1000 µm or in a range of about 300 µm to about 750 µm.

[0020] In some embodiments, the ratio of the thickness of the heat sink substrate to the thickness of the component substrate can be at least approximately 0.2. In some embodiments, the ratio of the thickness of the heat sink substrate to the thickness of the component substrate can be at least approximately 0.5, in some embodiments at least approximately 1, in some embodiments at least approximately 5, in some embodiments at least approximately 10, and in some embodiments at least approximately 20. For example, the ratio of the thickness of the heat sink substrate to the thickness of the component substrate 120 can be in a range of approximately 0.2 to approximately 25, for example, in a range of approximately 0.25 to approximately 20 or in a range of approximately 1 to approximately 15.

[0021] Furthermore, in some embodiments, the ratio of the total thickness of the component to the thickness of the component substrate is at least approximately 1.1. In some embodiments, the ratio of the total thickness of the component to the thickness of the component substrate can be at least approximately 2, in some embodiments at least approximately 3, in some embodiments at least approximately 5, in some embodiments at least approximately 10, and in some embodiments at least approximately 25. For example, the ratio of the total thickness of the component to the thickness of the component substrate can be in a range of approximately 2 to approximately 30, as well as in a range of approximately 3 to approximately 25 or in a range of approximately 5 to approximately 20.

[0022] After processing the component substrate, the component substrate comprises the first surface (instead of the original first surface) opposite the second surface, over which the electrically conductive layer is formed. In some embodiments, an electrically conductive structure can be formed over the first surface of the component substrate. The electrically conductive structure can contain conductive material arranged in any desired configuration, such as to define the functionality or characteristics of the electrical component. As an example, the electrically conductive structure can include a resistive element connected between a first terminal and a second terminal.Other examples include the electrically conductive structure containing one or more passive components, such as one or more capacitors, inductors, resistors or transmission lines in series or parallel to form individual components, and / or the electrically conductive structure containing various circuits, such as filters, splitters, attenuators, diplexers, etc.

[0023] The electrically conductive structure formed on the component substrate can comprise one or more thin-film components. These components can consist of one or more resistors, varistors, capacitors, inductors, and / or combinations thereof, such as a thin-film filter. The thin-film components can comprise one or more layers of conductive materials, dielectric materials, resistive materials, inductive materials, or other materials precisely formed using thin-film technology.

[0024] As an example, the electrically conductive structure can comprise a thin-film varistor. The varistor can comprise barium titanate, zinc oxide, or any other suitable dielectric material. Various additives can be included in the dielectric material, for example, those that create or enhance the voltage-dependent resistance of the dielectric material. For example, in some embodiments, the additives can comprise oxides of cobalt, bismuth, manganese, or a combination thereof. In some embodiments, the additives can comprise oxides of gallium, aluminum, antimony, chromium, titanium, lead, barium, nickel, vanadium, tin, or combinations thereof. The dielectric material can be doped with the additive(s) in amounts ranging from about 0.5 mol% to about 3 mol%, and in some embodiments, from about 1 mol% to about 2 mol%.The mean grain size of the dielectric material can contribute to its nonlinear properties. In some embodiments, the mean grain size can range from approximately 1 µm to 100 µm, and in others from approximately 2 µm to 80 µm.

[0025] As another example, the thin-film components may include a thin-film resistor comprising one or more resistive layers. For example, the resistive layer may comprise tantalum nitride (TaN), nickel chromium (NiCr), tantalum aluminide, chromium silicon, titanium nitride, titanium tungsten, tantalum tungsten, oxides and / or nitrides of such materials, and / or any other suitable thin-film resistive materials. The resistive layer may have any suitable thickness.

[0026] As another example, the thin-film components may include a thin-film capacitor comprising one or more dielectric layers. The dielectric layers may comprise one or more ceramic materials. Examples of suitable materials include alumina (Al₂O₃), aluminum nitride (AlN), beryllium oxide (BeO), aluminum oxide (Al₂O₃), boron nitride (BN), silicon (Si), silicon carbide (SiC), silicon dioxide (SiO₂), silicon nitride (Si₃N₄), gallium arsenide (GaAs), gallium nitride (GaN), zirconium dioxide (ZrO₂), mixtures thereof, oxides and / or nitrides of such materials, or any other suitable ceramic material. Further exemplary ceramic materials include barium titanate (BaTiO₃), calcium titanate (CaTiO₃), zinc oxide (ZnO), ceramics containing low-temperature annealed glass, or other glass-like composite materials. Dielectric materials such as diamond and cubic boron arsenide can also be used.

[0027] The thin-film component can comprise one or more layers with thicknesses ranging from approximately 0.001 µm to approximately 1000 µm, in some embodiments from approximately 0.01 µm to approximately 100 µm, in some embodiments from approximately 0.1 µm to approximately 50 µm, and in some embodiments from approximately 0.5 µm to approximately 20 µm. The respective layer(s) of materials forming the thin-film component can be deposited using special methods based on etching, photolithography, PECVD (plasma-enhanced chemical vapor deposition), or other methods.

[0028] The heat sink substrate of the heat sink component can comprise any suitable material that has a generally low thermal resistance (e.g., less than approximately 6.67 × 10⁻⁶). -3 m·°C / W) and a generally high specific electrical resistance (e.g., more than about 10 14 Ω·cm). A thermal resistance of 6.67 × 10 -3m·°C / W is equivalent to a thermal conductivity of approximately 150 W / m·°C. In other words, suitable materials for the heat sink substrate can generally exhibit a high thermal conductivity, such as more than approximately 150 W / m·°C.

[0029] In some embodiments, for example, the heat sink substrate can consist of a material having a thermal conductivity between approximately 100 W / m·°C and approximately 300 W / m·°C at approximately 22°C. In other embodiments, the heat sink substrate can consist of a material having a thermal conductivity between approximately 125 W / m·°C and approximately 250 W / m·°C at approximately 22°C. In still other embodiments, the heat sink substrate can consist of a material having a thermal conductivity between approximately 150 W / m·°C and approximately 200 W / m·°C at approximately 22°C.

[0030] In some embodiments, the heat sink substrate may comprise aluminium nitride, beryllium oxide, aluminium oxide, boron nitride, silicon nitride, magnesium oxide, zinc oxide, silicon carbide, any suitable ceramic material and mixtures thereof.

[0031] In some embodiments, the heat sink substrate may comprise aluminum nitride. In some embodiments, for example, the heat sink substrate may consist of any suitable composition that includes aluminum nitride. In some embodiments, the heat sink substrate may consist mainly of aluminum nitride; the heat sink substrate may also contain, for example, additives or impurities. In other embodiments, the heat sink substrate may comprise beryllium oxide. In some embodiments, for example, the heat sink substrate may consist of any suitable composition that includes beryllium oxide. In some embodiments, the heat sink substrate may consist mainly of beryllium oxide; the heat sink substrate may also contain, for example, additives or impurities.

[0032] The component substrate of the electrical component may comprise one or more dielectric materials. In some embodiments, the one or more dielectric materials may have a low dielectric constant. The dielectric constant may be less than about 100, less than about 75, less than about 50, less than about 25, less than about 15, and less than about 5. For example, the dielectric constant may be in the range of about 1.5 to 100 in some embodiments, about 1.5 to about 75 in some embodiments, and about 2 to about 8 in some embodiments. The dielectric constant can be determined according to IPC TM-650 2.5.5.3 at an operating temperature of 25°C and a frequency of 1 MHz.The dielectric loss factor can range from about 0.001 to about 0.04, and in some embodiments from about 0.0015 to about 0.0025.

[0033] In some embodiments, one or more of the dielectric materials may include organic dielectric materials. Examples of organic dielectrics are polyphenyl ether (PPE)-based materials, such as Polyclad's LD621 and Park / Nelco Corporation's N6000 series; liquid crystal polymers (LCP), such as Rogers Corporation's LCP or WL Gore & Associates, Inc.; hydrocarbon composites, such as Rogers Corporation's 4000 series; and epoxy-based laminates, such as Park / Nelco Corp.'s N4000 series.Examples include epoxy-based N4000-13, bromine-free material laminated to LCP, organic layers with high-K material, unfilled organic layers with high-K value, Rogers 4350, Rogers 4003 material and other thermoplastic materials such as polyphenylene sulfide resins, polyethylene terephthalate resins, polybutylene terephthalate resins, polyethylene sulfide resins, polyetherketone resins, polytetrafluoroethylene resins and grafting resins, or similar organic materials with low dielectric constant and low loss factor.

[0034] In some embodiments, one or more dielectric materials may comprise a ceramic-filled epoxy resin. For example, one or more dielectric materials may comprise an organic compound, such as a polymer (e.g., an epoxy), and may contain particles of a ceramic dielectric material, such as barium titanate, calcium titanate, zinc oxide, aluminum oxide with low-firing glass, or other suitable ceramic or glass-bonded materials.

[0035] However, other materials can also be used, including N6000, N4000-13 epoxy-based, LCP-laminated brominated-free material, organic layers with high-k material, unfilled organic high-k layers, Rogers 4350, Rogers 4003 material (from Rogers Corporation) and other thermoplastic materials such as hydrocarbon, Teflon, FR4, epoxy, polyamide, polyimide and acrylate, polyphenylene sulfide resins, polyethylene terephthalate resins, polybutylene terephthalate resins, polyethylene sulfide resins, polyetherketone resins, polytetrafluoroethylene resins, BT resin composites (e.g. Speedboard C), thermosets (e.g. Hitachi MCL-LX-67F) and grafting resins or similar organic materials with low dielectric constant and low loss factor.

[0036] Furthermore, non-organic dielectric materials, including ceramic, semiconducting, or insulating materials, can be used, such as barium titanate, calcium titanate, zinc oxide, aluminum oxide with a low-fired glass, or other suitable ceramic- or glass-bonded materials. Alternatively, the dielectric material can be an organic compound, such as an epoxy (with or without added ceramic, with or without glass fiber), which is popular as a printed circuit board material, or other plastics commonly used as dielectrics. In these cases, the conductor can be a copper foil that is chemically etched to form the structures. In still other embodiments, the dielectric material can comprise a material exhibiting a relatively high dielectric constant (K), such as one of NPO (COG), X7R, X5R, X7S, Z5U, Y5V, and strontium titanate.In such examples, the dielectric material can have a dielectric constant greater than 100, for example within a range of about 100 to about 4000, in some embodiments from about 1000 to about 3000.

[0037] If we now refer to the characters, it shows Fig. 1 a component assembly 100 including a heat sink component 102 and an electrical component 104. The Fig. 2 and Fig. Figure 3 shows embodiments of the heat sink component 102, and Fig. Figure 4 shows an embodiment of the electrical component 104. Fig. Figure 5 shows a view of the component assembly 100 before thinning and structuring the electrical component 104. Fig. Figure 6 shows the component assembly 100, which is mounted on a mounting surface 20 of a device 10, such as a printed circuit board (PCB) or the like.

[0038] As in Fig. As shown in Figure 1, the electrical component 104 is located on the heat sink component 102. If we look at Fig. Referring to section 2, the heat sink component 102 comprises a heat sink substrate 106 with a first surface 108 and a second surface 110 opposite the first surface 108. The heat sink substrate 106 comprises a thermally conductive material that is electrically non-conductive. For example, the heat sink substrate can comprise any suitable material with a generally low thermal resistance and a generally high electrical resistance, such as aluminum nitride, beryllium oxide, or any other such material as described elsewhere herein.

[0039] As in Fig. As shown in Figure 2, an electrically conductive layer 114 can be formed over the second surface 110 of the heat sink substrate 106. The electrically conductive layer 114 can be formed from a material containing a metal, so that the electrically conductive layer 114 can also be referred to as a metal layer. For example, the electrically conductive or metal layer 114 can consist of a metallic material such as copper, nickel, gold, silver, or other metals or alloys. Other exemplary materials for forming the conductive layer 114 are described elsewhere. Furthermore, the electrically conductive layer 114 can extend over all or part of the second surface 110 of the heat sink substrate 106.

[0040] If we now turn to… Fig. Referring to section 3, in some embodiments an electrically conductive layer 112 may be formed above the first surface 108 of the heat sink substrate 106. In embodiments comprising both electrically conductive layers 112, 114, the electrically conductive layer 112 may be referred to as the first electrically conductive layer 112, and the electrically conductive layer 114 may be referred to as the second electrically conductive layer 114. The first electrically conductive layer 112 may be formed from a material containing a metal, so that the first electrically conductive layer 112 may also be referred to as the metal layer.In embodiments where both the first electrically conductive layer 112 and the second electrically conductive layer 114 are metal layers, the first electrically conductive layer 112 may be referred to as the first metal layer, and the second electrically conductive layer 114 may be referred to as the second metal layer. The first electrically conductive or first metal layer 112 and / or the second electrically conductive or second metal layer 114 may consist of a metallic material such as copper, nickel, gold, silver, or other metals or alloys. Other exemplary materials for forming the first electrically conductive layer 112 are described elsewhere herein.

[0041] The first electrically conductive layer 112 can extend over all or part of the first surface 108 of the heat sink substrate 106. For example, in Fig. As shown in Figure 3, the first electrically conductive layer 112 extends to each of the four edges that define the extent of the first surface 108 of the heat sink substrate 106, but a gap 116 is formed or defined in the first electrically conductive layer 112, such that no electrically conductive material is located within the gap 116. As shown in Fig. As shown in Figure 3, the gap 116 can have a body 116a extending lengthwise along a longitudinal direction X defined by the heat sink substrate 106, and one or more arms 116b extending widthwise along a transverse direction Y defined by the heat sink substrate 106.

[0042] The gap 116 can accommodate an adhesive to connect the heat sink component 102 and the electrical component 104, as shown in Fig. Figure 1 shows that the gap 116 can provide a receiving container or the like for the adhesive, so that at least some of the adhesive is not squeezed out or leaks out of the component assembly 100 when the heat sink component 102 and the electrical component 104 are brought together. The adhesive can be a polymer adhesive, such as an epoxy resin or the like, or any other suitable type of adhesive. In other embodiments, the heat sink component 102 and the electrical component 104 can be joined together using other types of connection, as described elsewhere herein.

[0043] The first electrically conductive layer 112 and / or the second electrically conductive layer 114 of the heat sink component 102 can provide additional structural integrity to the heat sink component 102 and the component assembly 100. That is, the first electrically conductive layer 112 and / or the second electrically conductive layer 114 can impart mechanical strength to the heat sink component 102 and, when assembled with the electrical component 104 to form the component assembly 100, increase the mechanical strength of the component assembly 100. The material from which the first electrically conductive layer 112 and / or the second electrically conductive layer 114 is formed can be selected to impart the desired mechanical strength to the component assembly 100.The mechanical strength or stability provided by the electrically conductive layer(s) 112, 114 can enable the component substrate 120 (. Fig. 4, Fig. 5) to thin the electrical component 104 to a relatively small thickness, as described elsewhere herein. Furthermore, the first electrically conductive layer 112 and / or the second electrically conductive layer 114 can provide an electrical connection between and / or through the heat sink component 102 and the electrical component 104, as described herein.

[0044] As further in Fig. As shown in Figure 3, at least one via 118 extends through the heat sink substrate 106 from the first electrically conductive layer 112 to the second electrically conductive layer 114. In the illustrated embodiment, a total of eight vias 118 are defined in the heat sink substrate 106 and arranged in two rows of four vias 118 spaced apart along the longitudinal direction X, with the rows spaced apart along the transverse direction Y. In some embodiments, the at least one via 118 can comprise a conductive material to electrically connect the first electrically conductive layer 112 and the second electrically conductive layer 114. It is understood that the Fig. The multiple vias 118 shown in Figure 3 are only examples and any suitable number and arrangement of vias 118 can be used to electrically connect, for example, the first electrically conductive layer 112 and the second electrically conductive layer 114.

[0045] If we now Fig. Turning to 4, the electrical component 104 can comprise a component substrate 120. The component substrate has an original first surface 122 and a second surface 124 opposite the original first surface 122. Similar to the heat sink component 102, the electrical component can comprise an electrically conductive layer 126 formed over the second surface 124 of the component substrate 120. Like the first and second electrically conductive layers 112, 114 of the heat sink component 102, the electrically conductive layer 126 of the electrical component 104 can consist of any suitable electrically conductive material, such as a metal or a metal-containing material. The electrically conductive layer 126 can be referred to as a metal layer if it consists of a material containing at least one metal.Furthermore, the electrically conductive layer 126 extends over at least a part of the second surface 124 of the component substrate 120. In some embodiments, the electrically conductive layer 126 extends over the entirety of the second surface 124 of the component substrate 120.

[0046] Similar to the first and second electrically conductive layers 112, 114 of the heat sink component 102, the electrically conductive layer 126 of the electrical component 104 can impart mechanical strength to the component substrate 120 while simultaneously providing an electrical connection between the heat sink component 102 and the electrical component 104. For example, the electrically conductive layer 126 can be made of a material with a higher stiffness than the component substrate 120, thereby increasing the mechanical strength of the electrical component 104.As described here, the mechanical integrity conferred by the electrically conductive layer 126 and the heat sink component 102 makes it possible to thin the component substrate 120 to a thickness less than a typical thickness, in particular examples less than a typical thickness for components with a larger size or footprint.

[0047] If we look at Fig. As described above, the electrical component 104 can be assembled with the heat sink component 102 to form the component assembly 100. For example, the second surface 124 of the component substrate 120 can be adjacent to the first surface 108 of the heat sink substrate 106. An adhesive (not shown) can be applied between the heat sink component 102 and the electrical component 104 to bond the two components 102 and 104 together. As described above, for example, a gap 116 can be formed in the first electrically conductive layer 112, which is arranged above the first surface 108 of the heat sink substrate 106, and / or in the electrically conductive layer 126, which is formed above the second surface 124 of the component substrate 120.Although not shown in the figures, it should be noted that a gap 116 defined in the electrically conductive layer 126 of the electrical component 104 can be configured similarly to the gap 116 shown with respect to the heat sink component 102. At least some of the adhesive can be contained in the gap(s) 116, for example, such that at least some of the adhesive remains between the heat sink component 102 and the electrical component 104 when they are brought into contact. In particular, while bringing the components 102 and 104 into contact may cause the adhesive to spread and possibly extend beyond the edges of the components 102 and 104, the gap 116 helps to ensure that at least some adhesive remains between the components 102 and 104 to bond them together.It should be noted that the adhesive can be any suitable substance or material for holding together the heat sink component 102 and the electrical component 104, such as an epoxy (or epoxy resin) or any other binder.

[0048] The heat sink component 102 and the electrical component 104 can also be connected or bonded together in other ways. For example, a metallized connection can be made between components 102 and 104. In particular, in embodiments comprising the first electrically conductive layer 112 over the first surface 108 of the heat sink substrate 106 and the electrically conductive layer 126 over the second surface 124 of the component substrate 120, the first electrically conductive layer 112 can contact the electrically conductive layer 126 when the electrical component 104 is stacked with the heat sink component 102, as shown in Fig. Figure 5 is shown. In embodiments in which the first electrically conductive layer 112 is a first metal layer and the electrically conductive layer 126 is a component metal layer, the first metal layer can be connected to the component metal layer by a metallized connection. For example, the metal layers can be soldered together, heat can be selectively supplied to fuse the metal layers together at least at one point, etc.

[0049] After connecting the electrical component 104 to the heat sink component 102, the thickness of the electrical component 104 can be reduced. For example, the original first surface 122 of the component substrate 120 may be exposed after the components 102 and 104 are joined. The component substrate 120 can be machined along the original first surface 122, for example by grinding or the like, to reduce the thickness of the component substrate 120 and thus of the electrical component 104. After processing, the component substrate 120 has a first surface 122' opposite the second surface 124, with a thickness t between the first surface 122' and the second surface 124. csub is defined.

[0050] The thickness of the electrical component 104 can be reduced after connecting the electrical component 104 to the heat sink component 102, rather than before connecting the components 102 and 104, because the heat sink component 102 can provide the electrical component 104 with additional mechanical stability. Furthermore, the mechanical stability provided by the heat sink component 102 can make it possible to thin the component substrate 120 to a lesser thickness than previously possible.

[0051] For example, the component substrate 120 can have a thickness t csub of less than approximately 75 µm (micrometers). In some embodiments, the component substrate 120 can have a thickness t csub of less than approximately 125 µm, in some embodiments less than approximately 250 µm, and in some embodiments less than approximately 500 µm. The thickness t csubThe diameter of component substrate 120 can be in a range of approximately 50 µm to approximately 600 µm, as in a range of approximately 75 µm to approximately 500 µm, in a range of approximately 100 µm to approximately 400 µm, or in a range of approximately 150 µm to approximately 300 µm.

[0052] Furthermore, the ratio of thickness t hssub of the heat sink substrate 106 to thickness t csub The thickness of component substrate 120 must be at least approximately 0.2. In some embodiments, the ratio of the thickness t can be hssub of the heat sink substrate 106 to thickness t csub of component substrate 120 at least about 0.5, in some embodiments at least about 1, in some embodiments at least about 5, in some embodiments at least about 10 and in some embodiments at least about 20. For example, the ratio of the thickness t hssub of the heat sink substrate 106 to thickness t csubof the component substrate 120 in a range of about 0.2 to about 25, as in a range of about 0.25 to about 20 or in a range of about 1 to about 15.

[0053] Furthermore, the ratio of the total thickness t of the component assembly to the thickness of the component substrate t is 100. csub at least approximately 1.1. In some embodiments, the ratio of the total thickness t of the component assembly 100 to the thickness t can be csub of the component substrate 120 at least about 2, in some embodiments at least about 3, in some embodiments at least about 5, in some embodiments at least about 10 and in some embodiments at least about 25. For example, the ratio of the total thickness t of the component assembly 100 to the thickness t csubof component substrate 120 lie in a range of about 2 to about 30, as in a range of about 3 to about 25 or in a range of about 5 to about 20.

[0054] It should be noted that the component substrate 120 can also be thinned (or its thickness reduced) in several iterations. For example, after the formation of the electrically conductive layer 126 over the second surface 124 of the component substrate 120, the component substrate 120 can undergo initial processing, whereby the component substrate 120 is processed (e.g., ground, etc.) along the original first surface 122. After the electrical component 104 is joined to the heat sink component 102, the component substrate 120 can undergo a second processing, whereby the component substrate 120 is processed along the surface exposed by the first processing process. Other methods can also be used to reduce the thickness of the component substrate 120 of the electrical component 104.

[0055] When we return to Fig. If the electrical component 104 is referred to as 1, then an electrically conductive structure 128 can be formed over the first surface 122' of the component substrate 120. That is, after thinning the component substrate 120, an electrical path can be formed over the exposed surface 122' of the component substrate 120. In some embodiments, the electrically conductive structure 128 comprises one or more thin-film components. As an example, the electrically conductive structure 128, as in Fig. Figure 1 shows a first terminal 130, a second terminal 132, and a resistive element 134 extending from the first terminal 130 to the second terminal 132. The resistive element 134 can, for example, be a thin-film resistor or a thin-film varistor formed from one or more resistive layers. However, it should be noted that the electrically conductive structure 128 shown here serves only as an example and the electrically conductive structure 128 can include any electrical elements or shapes, designs, or constructions of conductive paths.For example, the electrically conductive structure 128 can contain one or more passive components, such as one or more capacitors, inductors, resistors or transmission lines in series or parallel to form individual components, and / or the electrically conductive structure 128 can contain various circuits, such as filters, splitters, attenuators, diplexers, etc.

[0056] If we now Fig. Turning to section 6, the component assembly 100 can, in some embodiments, be mounted on a mounting surface 20 of a device 10. The device 10 can be a printed circuit board (PCB) or the like. For example, the second electrically conductive layer 114 of the heat sink component 102 can contact the mounting surface 20 of the device 10. In particular, in some embodiments, the second electrically conductive layer 114 can contact an electrically and / or thermally conductive terminal or the like defined in or on the mounting surface 20 of the device 10, thereby allowing heat and / or electrical current to be conducted from the component assembly 100 to the device 10.

[0057] The present disclosure also includes methods for forming component assemblies, such as component assembly 100. If we refer to Fig. Referring to Section 7, an exemplary method 700 for forming a component arrangement 100 (702) comprises applying a conductive material to a second surface 110 of a heat sink substrate 106 of a heat sink component 102 to form a second electrically conductive layer 114 on the heat sink substrate 106. As described here, the heat sink substrate 106 comprises a thermally conductive material that is electrically non-conductive, and the second surface 110 of the heat sink substrate 106 faces a first surface 108 of the heat sink substrate 106. In some embodiments, the method 700 also includes (704) applying a conductive material to the first surface 108 of the heat sink substrate 106 to form a first electrically conductive layer 112 on the heat sink substrate 106.

[0058] If we at Fig. 7, the method 700 can also (706) comprise the formation of at least one via 118 in the heat sink substrate 106. The via(s) 118 can extend from the first surface 108 of the heat sink substrate 106 to the second surface 110 of the heat sink substrate 106. For example, in embodiments comprising both layers 112, 114, the vias 118 can extend between the first electrically conductive layer 112 on the first surface 108 of the heat sink substrate 106 and the second electrically conductive layer 114 on the second surface 110 of the heat sink substrate 106. In such embodiments, the method 700 (708) can include applying a conductive material within the at least one via 118 to electrically connect the first electrically conductive layer 112 and the second electrically conductive layer 114.The conductive material can be the same material from which the first electrically conductive layer 112 and / or the second electrically conductive layer 114 are made. The one or more vias 118 can be formed by drilling or otherwise defining the via(s) 118 in the heat sink substrate 106.

[0059] Furthermore, the method (710) can also include applying a conductive material to a second surface 124 of a component substrate 120 of an electrical component 104 to form an electrically conductive layer 126 on the component substrate 120. In the illustrated embodiment, the method (700) further includes (712) connecting the first electrically conductive layer 112 of the heat sink substrate 106 with the electrically conductive layer 126 of the component substrate 120. The component substrate 120 can be arranged on the heat sink substrate 106 such that the second surface 124 of the component substrate 120 adjoins the first surface 108 of the heat sink substrate 106.

[0060] As an example, joining the first electrically conductive layer 112 of the heat sink substrate 106 to the electrically conductive layer 126 of the component substrate 120 can include joining the first electrically conductive layer 112 to the electrically conductive layer 126 of the component substrate 120 by means of an adhesive. As described in more detail elsewhere herein, depositing the conductive material (704) over the first surface 108 of the heat sink substrate 106 to form the first electrically conductive layer 112 and / or (710) depositing the conductive material over the second surface 124 of the component substrate 120 to form the electrically conductive layer 126 can include defining a gap 116 in the conductive material to receive the adhesive. Of course, the heat sink component 102 and the electrical component 104 can also be connected or glued together in other ways.

[0061] As in Fig. As shown in Figure 7, the method 700 (714) can include processing the component substrate 120 to achieve an initial thickness t csub_i to reduce the component substrate 120, so that the component substrate 120 has a processed thickness t csub of less than approximately 600 µm. The machining of the component substrate 120 can include grinding an original first surface 122 of the component substrate 120, thereby defining a new first surface 122' of the component substrate 120, which is separated from the second surface 124 by the component substrate thickness t. csubis separated. Furthermore, as described elsewhere herein, the component substrate 120 can be bonded to the heat sink substrate 106 before the component substrate 120 is processed to reduce its thickness; for example, the heat sink substrate 106 can provide additional stability to the component substrate 120 to allow a relatively significant reduction in thickness, so that the resulting component thickness t csub is relatively small. For example, the heat sink component 102 can enhance the electrical component 104, so that the component substrate 120 can be processed or thinned to a relatively extreme degree, for example, without deformation or cracking occurring. In some embodiments, the component substrate 120 can be reduced to about half (about 50%) or less of its original thickness t. csub_iprocessed to about one third (about 33%), to about one quarter (about 25%), to about one fifth (about 20%), to about one sixth (about 17%), to about one eighth (about 12.5%) or less of the original thickness t csub_i of the component substrate 120.

[0062] After processing the component substrate 120 to reduce its thickness t csubMethod 700 (716) can comprise forming an electrically conductive structure 128 over the first surface 122' of the component substrate 120 of the electrical component 104. As described here, the electrically conductive structure 128 can comprise one or more thin-film components, one or more conductive lines or traces, or any other suitable conductive element. For example, forming the electrically conductive structure 128 can comprise applying conductive material to form at least one capacitor, inductor, resistor, transmission line, filter, splitter, attenuator, or diplexer. As described in the Fig. 1 and Fig.As shown in Figure 6, the electrically conductive structure 128 in the illustrated embodiment of the component arrangement 100 comprises a resistive element 134 connected between a first terminal 130 and a second terminal 132, such that (716) forming the electrically conductive structure 128 comprises forming the first terminal 130, the second terminal 132, and the resistive element 134 over the first surface 122' of the component substrate 120, for example, by depositing conductive material over the first surface 122' to define the first terminal 130, the second terminal 132, and the resistive element 134. However, the electrically conductive structure 128 can have any desired configuration.

[0063] The conductive material can be deposited onto the first surface 108 and / or the second surface 110 of the heat sink substrate 106 and the second surface 124 of the component substrate 120 using suitable methods. For example, a subtractive, semi-additive, or fully additive process can be used, involving plate or structure electroplating of the electrically conductive material, followed by printing and etching steps to form structured conductive layers. Photolithography, metallization (e.g., electroplating), sputtering, vacuum deposition, printing, or other methods can be used to form the electrically conductive layers. For example, a thin layer (e.g., a film) of an electrically conductive material can be bonded (e.g., laminated) to the surface of a substrate, such as a dielectric material.The thin layer of electrically conductive material can be selectively etched using a mask and photolithography to create a desired structure of the electrically conductive material on the substrate surface.

[0064] These and other modifications and variations of the present invention can be practically implemented by a person skilled in the art without deviating from the scope of the present invention. Furthermore, it should be understood that aspects of the various embodiments can be wholly or partially interchangeable. Moreover, a person skilled in the art will recognize that the above description is only exemplary and is not intended to limit the invention, which is described in more detail in the appended claims. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 63 / 503,500

[0001]

Claims

[1] Component assembly comprising: a heat sink component, comprising: a heat sink substrate comprising a thermally conductive material that is electrically non-conductive; wherein the heat sink substrate has a first surface and a second surface opposite the first surface, and a second, electrically conductive layer formed over the second surface of the heat sink substrate; and an electrical component, including: a component substrate having a first surface and a second surface opposite the first surface, and an electrically conductive structure formed over the first surface of the component substrate, wherein the electrical component is arranged on the heat sink component such that the second surface of the component substrate adjoins the first surface of the heat sink substrate. [2] Component assembly according to claim 1, wherein the heat sink component further comprises a first electrically conductive layer formed over the second surface of the heat sink substrate. [3] Component assembly according to claim 2, wherein the electrical component further comprises an electrically conductive layer formed over the second surface of the component substrate. [4] Component assembly according to claim 3, wherein the first electrically conductive layer of the heat sink component is connected to the electrically conductive layer of the electrical component. [5] Component assembly according to claim 4, wherein the first electrically conductive layer is connected to the electrically conductive layer of the electrical component by means of an epoxy resin. [6] Component assembly according to claim 4, wherein the first electrically conductive layer is a first metal layer and the electrically conductive layer of the electrical component is a component metal layer and wherein the first metal layer can be connected to the component metal layer by a metallized connection. [7] Component assembly according to claim 4, wherein the first electrically conductive layer extends over the entire first surface of the heat sink substrate and the electrically conductive layer of the electrical component extends over the entire second surface of the component substrate. [8] Component assembly according to claim 4, wherein a gap for receiving an adhesive is formed in the first electrically conductive layer and / or the electrically conductive layer of the electrical component. [9] Component assembly according to claim 2, wherein the first electrically conductive layer extends over the entirety of the first surface of the heat sink substrate. [10] Component assembly according to claim 2, wherein the first electrically conductive layer is a first metal layer and the second electrically conductive layer is a second metal layer. [11] Component assembly according to claim 2, wherein at least one via extends through the heat sink substrate from the first electrically conductive layer to the second electrically conductive layer. [12] Component assembly according to claim 11, wherein the at least one via comprises a conductive material to electrically connect the first electrically conductive layer and the second electrically conductive layer. [13] Component assembly according to claim 1, wherein the electrical component further comprises an electrically conductive layer formed over the second surface of the component substrate. [14] Component assembly according to claim 13, wherein the electrically conductive layer of the electrical component extends over the entirety of the second surface of the component substrate. [15] Component assembly according to claim 1, wherein the electrical component is connected to the heat sink component by means of an adhesive. [16] Component assembly according to claim 1, wherein the component substrate has a thickness of less than about 600 µm. [17] Component assembly according to claim 1, wherein the ratio of the thickness of the heat sink substrate to the thickness of the component substrate is at least about 0.

2. [18] Component assembly according to claim 1, wherein the ratio of the total thickness of the component to the thickness of the component substrate is at least about 2. [19] Component assembly according to claim 1, wherein the electrically conductive structure comprises at least one capacitor, one inductor, one resistor, one transmission line, one filter, one splitter, one attenuator or one diplexer. [20] Method for forming a component assembly, the method comprising: the deposition of a conductive material on a second surface of a heat sink substrate to form a second electrically conductive layer on the heat sink substrate, wherein the heat sink substrate comprises a thermally conductive material that is electrically non-conductive, and the second surface of the heat sink substrate is opposite the first surface of the heat sink substrate; and forming an electrically conductive structure over a first surface of a component substrate of an electrical component, wherein the component substrate has a second surface opposite the first surface, wherein the component substrate is arranged on the heat sink substrate such that the second surface of the component substrate adjoins the first surface of the heat sink substrate.

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