RF SPUTTERING OF MULTIPLE ELECTRODES WITH OPTIMIZED PLASMA COUPLING THROUGH IMPLEMENTATION OF CAPACITIVE AND INDUCTIVE COMPONENTS

Abstract

A device comprises a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power supply located outside the vacuum chamber; an RF matching network operationally coupled to the RF power supply; and a plurality of electrodes mounted inside the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power supply through the RF matching network. The RF power signals are delivered simultaneously to the plurality of electrodes during a sputtering operation. The plurality of electrodes and a set of electrical components are operable to control the inductive and capacitive reactance for coupling the RF power signals to provide more desirable plasma coupling during the sputtering process.

Description

CROSS-REFERENCE TO RELATED REGISTRATION

[0001] This application claims priority over U.S. Application No. 18 / 366,437, filed on August 7, 2023, which is hereby incorporated in its entirety by reference. STATE OF THE ART

[0002] Magnetron sputtering of target materials is a well-established process widely used to produce numerous thin films on various substrates. In magnetron sputtering, the material to be sputtered is formed on either a planar or tubular target structure. A magnetron array is positioned alongside or within the target structure and provides a magnetic field such that sufficient magnetic flux is present at the outer surface of the target structure for the sputtering process.

[0003] Planar magnetron high-frequency sputtering (HF sputtering) of target materials is a well-established technique. For example, a sputtering process has been developed that involves the simultaneous application of direct current (DC) and high-frequency current (HF current), utilizing the superposition of the two energy sources to create a planar target structure. Furthermore, several connections for simple, rotatable magnetron HF sputtering of target materials are also known.

[0004] The RF magnetron sputtering used in current systems employs either small, laboratory-scale magnetrons or planar magnetrons and is limited by the unevenness of the deposited layer. For example, applying RF power to a rotating cathode can lead to unacceptable unevenness in the thickness of the deposited thin film.

[0005] Accordingly, there is a need to improve the application of RF power to rotating sputtering cathodes in order to solve the problem of the unevenness of the deposited thin films. SUMMARY

[0006] A setup comprises a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power supply located outside the vacuum chamber; an RF matching network operationally coupled to the RF power supply; and a plurality of electrodes mounted inside the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power supply through the RF matching network. The RF power signals are delivered simultaneously to the plurality of electrodes during a sputtering operation. The plurality of electrodes and a set of electrical components are operable to control the inductive and capacitive reactance for coupling the RF power signals to provide optimized plasma coupling during the sputtering process. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Features of the present invention will become apparent to persons skilled in the art from the following description with reference to the drawings. It is understood that the drawings only represent typical embodiments and are therefore not to be considered as limiting the scope of protection, the invention being described with additional specificity and detail using the accompanying drawings, in which: Fig. 1 a schematic diagram of a device for RF sputtering using multiple electrodes with reactive components according to one embodiment; and Fig. 2 is a schematic diagram of a device for RF sputtering using multiple electrodes with reactive components according to another embodiment. DETAILED DESCRIPTION

[0008] The following detailed description outlines the embodiments in sufficient detail to enable skilled persons to apply the invention. It is understood that other embodiments can also be used without deviating from the scope of protection of the invention. Therefore, the following detailed description should not be interpreted in a restrictive sense.

[0009] This paper describes devices and methods for RF sputtering with optimized inductive and capacitive coupling. The present device can utilize multiple electrodes, such as magnetron electrodes, and reactive components, such as inductors and capacitors, to optimize RF power coupling for sputtering applications. In some embodiments, the magnetron electrodes can have magnetic fields generated by permanent magnets or by electrical wire coils.

[0010] The present approach optimizes the coupling of RF power to the plasma between capacitive and inductive coupling, resulting in a more desirable impedance and power distribution. Improving these properties can lead to more desirable thin film characteristics and a better deposition profile and / or a higher deposition rate. This is achieved through the operating range of the setup configuration, which develops the desired ion energy and flux.

[0011] In one embodiment, the device features a multi-electrode configuration utilizing multiple connections and integrates an RF matching network and all necessary electrical balancing components. This ensures controllable power output to each magnetron electrode.

[0012] The present setup offers the advantages of utilizing unique power couplings and enabling modification of the plasma coupling. This setup also provides the ability to combine multiple energy sources, such as various RF currents, medium-frequency alternating currents (MF), direct current, or pulsed direct current. These techniques have proven useful for controlling the deposition rate and layer properties.

[0013] The electrodes used in this device comprise a material suitable for transferring energy from DC, pulsed DC, MF, or RF power supplies. Power output can be in the form of sinusoidal, rectangular, or other waveforms that prove advantageous for the plasma process. The shape, cross-section, and surface finish of the electrode are determined by the properties required for the application. This may include mechanical strength, thermal conductivity, bonding or adhesion to the target material, or other such requirements. The electrode can function as an anode, cathode, or as an insulated element within the process chamber.

[0014] To improve the uniformity or speed of the process, the electrodes can also have an enhanced magnetic field by using permanent magnets or electromagnetically generated fields. Depending on their function in the circuit, the electrodes can be insulated from the ground or grounded. Cooling of the electrodes can be achieved by radiation or by conduction to a liquid such as water. In one embodiment, the present device uses a rotatable magnetron as an electrode, which generates a plasma to sputter material from the target.

[0015] Further details of the various embodiments are described below with reference to the drawings.

[0016] Fig. Figure 1 illustrates an RF sputtering device (100) that controls voltage and current, capacitive and inductive reactance to achieve improved process and layer properties, according to one embodiment. The device 100 includes a vacuum chamber 110 configured to generate a substantially atmospheric vacuum environment 112 for plasma processing. The vacuum environment 112 includes selected gases that create the desired sputtering conditions and deposited material properties.

[0017] A number of electrodes, such as a first electrode 120 and a second electrode 130, are mounted in the vacuum chamber 110 to be exposed to the vacuum environment 112. In some embodiments, the electrodes 120 and 130 are magnetron electrodes rotatably mounted in series within the vacuum chamber 110. For example, the electrodes 120 and 130 may each comprise a rotating magnetron array that includes a rotatable target cylinder containing a magnetron. In other embodiments, the electrodes 120 and 130 may each comprise a planar magnetron array. The electrodes 120 and 130 are selected to generate the desired magnetic fields for a target material in order to optimize a sputtering process.

[0018] As in Fig. As shown in Figure 1, the first electrode 120 has a first coupling end 122 and an opposite second coupling end 124. The second electrode 130 has a first coupling end 132 and an opposite second coupling end 134. The first coupling device 140 is electrically connected to the first electrode 120 via the first coupling end 122, and a second coupling device 142 is electrically connected to the first electrode 120 via the second coupling end 124. A third coupling device 144 is electrically connected to the second electrode 130 via the first coupling end 132, and a fourth coupling device 146 is electrically connected to the second electrode 130 via the second coupling end 134.

[0019] In one embodiment, the first coupling device 140 may comprise a first end block, and the second coupling device 142 may comprise a second end block. In this embodiment, the first and second coupling ends 122, 124 of the first electrode 120 are connected to the first and second end blocks, respectively, by appropriate vacuum sealing arrangements. Furthermore, the third coupling device 144 may comprise a third end block, and the fourth coupling device 146 may comprise a fourth end block. The first and second coupling ends 132, 134 of the second electrode 130 are each connected to the third and fourth end blocks by appropriate vacuum sealing arrangements. As used herein, the term "end block" refers to a coupling device that provides one or more functions, including rotation, force, bearing, rotating vacuum sealing, or rotating water sealing.The vacuum sealing arrangements enable the connection of components inside and outside the vacuum chamber 110.

[0020] In an exemplary embodiment, the first coupling device 140 is a first end block located outside the vacuum chamber 110 on a first side thereof, and the second coupling device 142 is a second end block located outside the vacuum chamber 110 on an opposite second side thereof. In this embodiment, the first electrode 120 is rotatably coupled to the first end block by the first coupling end 122 and rotatably coupled to the second end block by the second coupling end 124. Furthermore, the third coupling device 144 is a third end block located outside the vacuum chamber 110 on the first side thereof, and the fourth coupling device 146 is a fourth end block located outside the vacuum chamber 110 on the opposite second side thereof.The electrode 130 is rotatably coupled to the third end block via the first coupling end 132 and rotatably coupled to the fourth end block via the second coupling end 134.

[0021] A variety of electrical components 152, 154, and 156 are also used in the facility 100. These electrical components 152, 154, and 156 may include, for example, one or more capacitors, inductors, or resistors configured to optimize the power supply to the electrodes 120 and 130.

[0022] The device 100 includes at least one RF power supply 160 and an RF matching network 162 coupled to the RF power supply 160. The electrodes 120 and 130 are configured to receive RF power signals from the RF power supply 160 via the RF matching network 162. In one embodiment, the RF matching network 162 is operationally coupled to the electrode 120 via the first coupling device 140 to provide the RF power signals to the electrode 120. The electrical component 152 is coupled between the second coupling device 142 and the fourth coupling device 146, so that the RF power signals are also simultaneously supplied to the electrode 130.

[0023] In one embodiment, the electrical component 154 is coupled between the third coupling device 144 and a ground connection 166 within the vacuum chamber 110. The electrical component 156 can be coupled between the first coupling device 140 and the third coupling device 144.

[0024] In another embodiment, the electrical component 156 can be grounded at one terminal and is configured to function as an additional electrode in the vacuum chamber 110. Similarly, the electrical component 152, which is coupled between the second coupling device 142 and the fourth coupling device 146, can be configured as an electrode, e.g., a magnetron, to improve plasma coupling in the vacuum chamber 110. This design is configured to improve the impedance, uniformity, and / or deposition rate of the device 100. Furthermore, this design may require additional matching network components, such as capacitors or inductors, to optimize power coupling and plasma performance.

[0025] In some embodiments, electrodes 120 and 130 can each be a single, continuous electrode. In alternative embodiments, electrodes 120 and 130 can each be implemented with several discrete parts, as opposed to a single, continuous electrode.

[0026] In various embodiments, a power transmission device can be used to transmit the RF power to electrodes 120 and 130. The RF power configuration manages the inductive and capacitive reactance between electrodes 120 and 130 during operation to generate a desired sputtering process. The configuration of device 100 provides a power circuit that enables the simultaneous delivery of RF power signals to electrodes 120 and 130 during a sputtering process.

[0027] Fig. Figure 2 illustrates a device 200 for RF sputtering, which manages the inductive and capacitive reactance during plasma coupling, according to another embodiment. The device 200 includes a vacuum chamber 210 configured to generate a substantially atmospheric vacuum environment 212 for plasma processing.

[0028] A plurality of electrodes, such as a first magnetron electrode 220 and a second magnetron electrode 230, are mounted in the vacuum chamber 210 to be exposed to the vacuum environment 212. In some embodiments, the magnetron electrodes 220 and 230 are rotatably arranged in series within the vacuum chamber 210. For example, the magnetron electrodes 220 and 230 can each comprise a rotating magnetron cathode assembly that includes a rotatable target cylinder which receives a magnetron.

[0029] As in Fig.As shown in Figure 2, the first magnetron electrode 220 has a first coupling end 222 and an opposite second coupling end 224. The second magnetron electrode 230 has a first coupling end 232 and an opposite second coupling end 234.

[0030] A first coupling device 240 is electrically connected to the first magnetron electrode 220 via the first coupling end 122, and a second coupling device 242 is electrically connected to the first magnetron electrode 220 via the second coupling end 224. A third coupling device 244 is electrically connected to the second magnetron electrode 230 via the first coupling end 232, and a fourth coupling device 246 is electrically connected to the second magnetron electrode 230 via the second coupling end 234.

[0031] In one embodiment, the first coupling device 240 can comprise a first end block, and the second coupling device 242 can comprise a second end block. In this embodiment, the first and second coupling ends 222, 224 of the first magnetron electrode 220 are connected to the first and second end blocks, respectively, by corresponding vacuum sealing arrangements. Furthermore, the third coupling device 244 can comprise a third end block, and the fourth coupling device 246 can comprise a fourth end block. The first and second coupling ends 232, 234 of the second magnetron electrode 230 are each connected to the third and fourth end blocks by corresponding vacuum sealing arrangements.

[0032] In an exemplary embodiment, the first coupling device 240 is a first end block located outside the vacuum chamber 210 on a first side thereof, and the second coupling device 242 is a second end block located outside the vacuum chamber 210 on a opposite second side thereof. In this embodiment, the first magnetron electrode 220 is rotatably coupled to the first end block by the first coupling end 222 and rotatably coupled to the second end block by the second coupling end 224. Furthermore, the third coupling device 244 is a third end block located outside the vacuum chamber 210 on the first side thereof, and the fourth coupling device 246 is a fourth end block located outside the vacuum chamber 210 on the opposite second side thereof.The second magnetron electrode 230 is rotatably coupled to the third end block via the first coupling end 232 and rotatably coupled to the fourth end block via the second coupling end 234.

[0033] A variety of electrical components 252, 254, and 256 are also used in the facility 200. These electrical components 252, 254, and 256 may include, for example, one or more capacitors, inductors, or resistors configured to optimize the power supply to the magnetron electrodes 220 and 230.

[0034] The device 200 includes an RF power supply 260 and an RF matching network 262 coupled to the RF power supply 260. The magnetron electrodes 220 and 230 are configured to receive RF power signals from the RF power supply 260 via the RF matching network 262.

[0035] In one embodiment, the RF matching network 262 is operationally coupled to the first magnetron electrode 220 via the first coupling device 240 to provide the RF power signals for the first magnetron electrode 220. The electrical component 252 is coupled between the second coupling device 242 and the fourth coupling device 246, so that the RF power signals are also simultaneously supplied to the second magnetron electrode 230.

[0036] In one embodiment, the electrical component 254 is coupled between the third coupling device 244 and a ground connection 266 within the vacuum chamber 210. The electrical component 256 can be coupled between the first coupling device 240 and the third coupling device 244.

[0037] In another embodiment, the electrical component 256 can be grounded at one terminal and is configured to function as an additional electrode in the vacuum chamber 210. Similarly, the electrical component 252, which is coupled between the second coupling device 242 and the fourth coupling device 246, can be configured as an electrode, e.g., a magnetron, to improve plasma coupling in the vacuum chamber 210. This design is configured to improve the impedance, uniformity, and / or deposition rate of the device 200. Furthermore, this design may require additional matching network components, such as capacitors or inductors, to optimize power coupling and plasma performance.

[0038] In some embodiments, the magnetron electrodes 220 and 230 can each be a single, continuous electrode. In alternative embodiments, the magnetron electrodes 220 and 230 can each be implemented with several discrete parts, as opposed to a single, continuous electrode.

[0039] In various embodiments, a power transmission device can be used to transfer the RF power to the magnetron electrodes 220 and 230. The RF power provides a magnetic flux between the magnetron electrodes 220 and 230 during operation to generate a desired sputtering process.

[0040] Furthermore, a set of low-frequency or direct current power supplies are arranged outside the vacuum chamber 210. In one embodiment, a first low-frequency or direct current power supply 280 is operationally connected to the first magnetron electrode 220 via a second coupling device 242, and a second low-frequency or direct current power supply 282 is operationally connected to the second magnetron electrode 230 via a fourth coupling device 246.

[0041] The low-frequency or DC power supplies 280 and 282 are grounded and configured to vary the sputtering rate and control plasma and layer properties. For example, mixing the RF power signals with the low-frequency or DC power signals can provide a higher deposition rate, modify layer properties, or both. The RF power signals and the low-frequency or DC power signals can be supplied to the magnetron electrodes 220 and 230 simultaneously during a sputtering operation.

[0042] A set of filters can be coupled to the outputs of the low-frequency or DC power supplies 280 and 282 as required. In one embodiment, a first filter 284, e.g., a first low-pass filter, is coupled to an output of the low-frequency or DC power supply 280, and a second filter 286, e.g., a second low-pass filter, is coupled to an output of the low-frequency or DC power supply 282. The first and second filters 284, 286 are configured to support the combination of the low-frequency or DC power with the RF power output to the magnetron electrodes 220 and 230.

[0043] The configuration of the device 200 provides a power circuit that makes it possible to simultaneously supply RF power signals to the magnetron electrodes 220 and 230 during a sputtering process. Exemplary embodiments

[0044] Example 1 includes a setup comprising: a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power supply located outside the vacuum chamber; an RF matching network operationally coupled to the RF power supply; and a plurality of electrodes placed inside the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power supply through the RF matching network; the RF power signals being supplied simultaneously to the plurality of electrodes during a sputtering operation; the plurality of electrodes and a set of electrical components being operable to control the inductive and capacitive reactance for coupling the RF power signals to provide more desirable plasma coupling during the sputtering process.

[0045] Example 2 includes the setup according to Example 1, wherein the plurality of electrodes each comprises a rotating magnetron assembly enclosing a rotatable target cylinder that accommodates a magnetron.

[0046] Example 3 includes the setup according to Example 1, wherein the plurality of electrodes each comprises a planar magnetron arrangement.

[0047] Example 4 includes the apparatus according to one of Examples 1 to 2, wherein the plurality of electrodes comprises a first rotating magnetron arrangement and a second rotating magnetron arrangement arranged in series in the vacuum chamber.

[0048] Example 5 includes the setup according to Example 4, wherein: the first rotating magnetron assembly includes a first coupling end and an opposite second coupling end; and the second rotating magnetron assembly includes a first coupling end and an opposite second coupling end.

[0049] Example 6 includes the apparatus of Example 5, further comprising: a first coupling device electrically connected to the first coupling end of the first rotating magnetron assembly; a second coupling device electrically connected to the second coupling end of the first rotating magnetron assembly; a third coupling device electrically connected to the first coupling end of the second rotating magnetron assembly; and a fourth coupling device electrically connected to the second coupling end of the second rotating magnetron assembly.

[0050] Example 7 includes the arrangement according to Example 6, wherein: the first coupling device comprises a first end block and the second coupling device comprises a second end block; wherein the first and second coupling ends of the first rotating magnetron arrangement are each connected to the first and second end blocks by appropriate vacuum sealing arrangements.

[0051] Example 8 includes the arrangement according to Example 7, wherein: the third coupling device comprises a third end block and the fourth coupling device comprises a fourth end block; wherein the first and second coupling ends of the second rotating magnetron arrangement are each connected to the third and fourth end blocks by appropriate vacuum sealing arrangements.

[0052] Example 9 includes the setup according to Example 8, wherein the RF matching network is coupled to the first rotating magnetron assembly via the first end block to provide the RF power signals for the first rotating magnetron assembly.

[0053] Example 10 includes the setup according to Example 9, further comprising a first electrical component coupled between the first end block and the fourth end block, so that the RF power signals are simultaneously supplied to the second rotating magnetron assembly.

[0054] Example 11 includes the apparatus according to Example 10, further comprising a second electrical component coupled between the third end block and an earth connection within the vacuum chamber.

[0055] Example 12 includes the apparatus according to any one of Examples 1 to 11, further comprising a set of low-frequency or direct current power supplies located outside the vacuum chamber, each coupled to each of the plurality of electrodes.

[0056] Example 13 includes the setup according to Example 12, further comprising a set of filters, each coupled to the outputs of the set of low-frequency or DC power supplies.

[0057] Example 14 includes a device comprising: a vacuum chamber configured to produce a substantially atmospheric vacuum environment for plasma processing; an RF power supply located outside the vacuum chamber; an RF matching network operationally coupled to the RF power supply; a set of low-frequency or DC power supplies located outside the vacuum chamber; and a plurality of magnetron electrodes rotatably mounted in the vacuum chamber, the plurality of magnetron electrodes being configured to receive RF power signals from the RF power supply via the RF matching network and low-frequency or DC power signals via the low-frequency or DC power supplies;wherein the RF power signals and the low-frequency or DC power signals are simultaneously supplied to the plurality of magnetron electrodes during a sputtering process; wherein the plurality of magnetron electrodes and a set of electrical components are operable to couple the RF power signals and the low-frequency or DC power signals, in order to manage the inductive and capacitive reactance for coupling the RF power signals in order to provide optimized plasma coupling during the sputtering process.

[0058] Example 15 includes the setup according to Example 14, wherein the plurality of magnetron electrodes comprises a first rotating magnetron arrangement and a second rotating magnetron arrangement arranged in series in the vacuum chamber.

[0059] Example 16 includes the arrangement according to Example 15, wherein: the first rotating magnetron arrangement includes a first coupling end and an opposite second coupling end; and the second rotating magnetron arrangement includes a first coupling end and an opposite second coupling end.

[0060] Example 17 includes the apparatus of Example 16, further comprising: a first coupling device electrically connected to the first coupling end of the first rotating magnetron assembly; a second coupling device electrically connected to the second coupling end of the first rotating magnetron assembly; a third coupling device electrically connected to the first coupling end of the second rotating magnetron assembly; and a fourth coupling device electrically connected to the second coupling end of the second rotating magnetron assembly.

[0061] Example 18 includes the setup according to Example 17, wherein the RF matching network is coupled to the first rotating magnetron assembly via the first coupling device to provide the RF power signals to the first rotating magnetron assembly.

[0062] Example 19 includes the apparatus of Example 18, wherein the low-frequency or DC power supplies comprise: a first low-frequency or DC power supply which is operatively connected to the first rotating magnetron assembly via the second coupling device; and a second low-frequency or DC power supply which is operatively connected to the second rotating magnetron assembly via the fourth coupling device.

[0063] Example 20 includes the setup according to Example 19, further comprising: a first low-pass filter coupled to an output of the first low-frequency or DC power supply; and a second low-pass filter coupled to an output of the second low-frequency or DC power supply.

[0064] It is evident from the foregoing that, although specific embodiments have been described here for illustrative purposes, various modifications can be made without deviating from the scope of the disclosure. Therefore, the described embodiments are to be considered in every respect merely illustrative and not limiting. Furthermore, all modifications that fall within the scope and equivalence of the claims are to be included within their scope of application. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 18 / 366,437

[0001]

Claims

A device comprising: a vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power supply located outside the vacuum chamber; an RF matching network operationally coupled to the RF power supply; and a plurality of electrodes placed inside the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power supply through the RF matching network; the RF power signals being delivered simultaneously to the plurality of electrodes during a sputtering operation; the plurality of electrodes and a set of electrical components being operable to control the inductive and capacitive reactance for coupling the RF power signals to provide more desirable plasma coupling during the sputtering process. Device according to claim 1, wherein the plurality of electrodes each comprises a rotating magnetron arrangement enclosing a rotatable target cylinder that accommodates a magnetron. Device according to claim 1, wherein the plurality of electrodes each comprises a planar magnetron arrangement. Device according to claim 1, wherein the plurality of electrodes comprises a first rotating magnetron arrangement and a second rotating magnetron arrangement arranged in series in the vacuum chamber. The device according to claim 4, wherein: the first and the second rotating magnetron arrangement includes a first coupling end and an opposite second coupling end; and the second rotating magnetron arrangement includes a first coupling end and an opposite second coupling end. The device according to claim 5, further comprising: a first coupling device in electrical connection with the first coupling end of the first rotating magnetron arrangement; a second coupling device in electrical connection with the second coupling end of the first rotating magnetron arrangement; a third coupling device in electrical connection with the first coupling end of the second rotating magnetron arrangement and a fourth coupling device in electrical connection with the second coupling end of the second rotating magnetron arrangement. Device according to claim 6, wherein: the first coupling device comprises a first end block; and the second coupling device comprises a second end block; wherein the first and the second coupling end of the first rotating magnetron arrangement are each connected to the first and the second end block by appropriate vacuum sealing arrangements. The apparatus according to claim 7, wherein: the third coupling device comprises a third end block; and the fourth coupling device comprises a fourth end block; wherein the first and second coupling ends of the second rotating magnetron arrangement are each connected to the third and fourth end blocks by appropriate vacuum sealing arrangements. Device according to claim 8, wherein the RF matching network is coupled to the first rotating magnetron assembly via the first end block to provide the RF power signals for the first rotating magnetron assembly. The device according to claim 9, further comprising a first electrical component coupled between the first end block and the fourth end block, such that the RF power signals are simultaneously supplied to the second rotating magnetron arrangement. Device according to claim 10, further comprising a second electrical component coupled between the third end block and an earth connection within the vacuum chamber. The device according to claim 1, further comprising a set of low-frequency or direct current power supplies located outside the vacuum chamber and each coupled to each of the plurality of electrodes. Device according to claim 12, further comprising a set of filters, each of which is coupled to the outputs of the set of low-frequency or DC power supplies. A device comprising: a vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; a high-frequency (HF) power supply located outside the vacuum chamber; an HF matching network operationally coupled to the HF power supply; a set of low-frequency or DC power supplies located outside the vacuum chamber; and a plurality of magnetron electrodes rotatably mounted within the vacuum chamber, the plurality of magnetron electrodes configured to receive HF power signals from the HF power supply via the HF matching network and low-frequency or DC power signals via the low-frequency or DC power supplies; wherein the HF power signals and the low-frequency or DC power signals are simultaneously delivered to the plurality of magnetron electrodes during a sputtering operation.wherein the plurality of magnetron electrodes and a set of electrical components can be operated to couple the RF power signals and the low-frequency or DC power signals, in order to manage the inductive and capacitive reactance for coupling the RF power signals in order to provide optimized plasma coupling during the sputtering process. Device according to claim 14, wherein the plurality of magnetron electrodes comprises a first rotating magnetron arrangement and a second rotating magnetron arrangement arranged in series in the vacuum chamber. The device according to claim 15, wherein: the first and the second rotating magnetron arrangement includes a first coupling end and an opposite second coupling end; and the second rotating magnetron arrangement includes a first coupling end and an opposite second coupling end. The device according to claim 16, further comprising: a first coupling device in electrical connection with the first coupling end of the first rotating magnetron arrangement; a second coupling device in electrical connection with the second coupling end of the first rotating magnetron arrangement; a third coupling device in electrical connection with the first coupling end of the second rotating magnetron arrangement and a fourth coupling device in electrical connection with the second coupling end of the second rotating magnetron arrangement. Device according to claim 17, wherein the RF matching network is coupled to the first rotating magnetron arrangement via the first coupling device to provide the RF power signals for the first rotating magnetron arrangement. Device according to claim 18, wherein the low-frequency or DC power supplies comprise: a first low-frequency or DC power supply which is operationally connected to the first rotating magnetron assembly via the second coupling device; and a second low-frequency or DC power supply which is operationally connected to the second rotating magnetron assembly via the fourth coupling device. The device according to claim 19, further comprising: a first low-pass filter coupled to an output of the first low-frequency or DC power supply; and a second low-pass filter coupled to an output of the second low-frequency or DC power supply.

Images