NITRIDE GRID SUPPORT IN STORAGE

Abstract

Systems, methods, and equipment for nitride grid support structures and double-sided capacitors in vertical three-dimensional (3D) memories are provided. An exemplary method includes a procedure for forming a nitride grid support structure for an array of vertically stacked memory cells incorporating access devices and memory nodes. The method involves depositing alternating layers of a channel material and a first sacrificial material in iterative steps to form a vertical stack on a substrate. The vertical stack can be patterned to form a plurality of elongated vertical columns separated by a plurality of first vertical openings. A second sacrificial layer can be deposited to fill the first vertical openings and cover the vertical stack. A plurality of vertical openings and lateral recesses can be formed.A nitride material can be deposited in the vertical openings and lateral recesses to form a variety of nitride grid support structures.