METHOD FOR COMBINING SILICON MATERIAL AND III-V MATERIAL AND ASSOCIATED DEVICE
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- NOKIA SOLUTIONS & NETWORKS OY
- Filing Date
- 2019-06-28
- Publication Date
- 2026-04-15
AI Technical Summary
Monolithically integrated DFB lasers face challenges in achieving large wavelength distributions due to lasing wavelength detuning from the gain peak, limiting the number of channels that can be integrated on a substrate, and high growth temperatures cause interface anomalies and inefficiencies in heterogenous integration of III-V materials with silicon.
A method involving selective area growth of Multiple Quantum Wells (MQW) on a silicon substrate using trenches and recesses to control wavelength distribution and reduce interface anomalies by degassing hydrogen, facilitated by MOVPE processes.
Enables monolithically integrated devices with efficient and precise wavelength distribution, reducing interface anomalies and improving the efficiency of light emission components.