Inductors for radio-frequency resonators and methods for fabricating the same

Abstract

Embodiments of the disclosure provide an RF inductor for an RF resonator. In some embodiments, the example RF inductor includes a machined conductive coil defining a hollow interior and having a cross-sectional area configured to facilitate power dissipation mitigation in the RF resonator. The RF inductor may include a sapphire dielectric core coupled to the machined conductive coil. At least a portion of the sapphire dielectric core may be positioned within the machined conductive coil. The sapphire dielectric core may be configured at least in part to conduct heat away from the sapphire dielectric core.

Description

INDUCTORS FOR RADIO-FREQUENCY RESONATORS AND METHODS FOR FABRICATING THE SAMECROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. Application No. 18 / 642,203, titled “INDUCTORS FOR RADIO-FREQUENCY RESONATORS AND METHODS FOR FABRICATING THE SAME,” filed April 22, 2024, which claim priority and the benefit of U.S. Provisional Application No. 63 / 502,207, titled “INDUCTORS FOR RADIOFREQUENCY RESONATORS AND METHODS FOR FABRICATING THE SAME,” filed May 15, 2023, the contents of which is incorporated by reference herein in its entirety.TECHNICAL FIELD

[0002] Various embodiments relate to apparatuses, systems, and methods for mitigating power dissipation and providing efficient heat transfer in systems using high radiofrequency (RF) voltages. For example, some embodiments relate to the use of RF resonators that include an RF inductor configured to mitigate power dissipation in the RF resonators and facilitate efficient heat transfer in an ion trap.BACKGROUND

[0003] In various scenarios, a system may require RF drive signals at relatively high voltages in order to perform various functions. For example, an ion trap operated in a cryogenic environment (e.g., cryogenic ion traps) may require high voltages to enable the confinement of ions for applications in quantum computing systems. An RF resonator may be used to provide such high voltages. Through applied effort, ingenuity, and innovation, many deficiencies of such prior RF resonators have been solved by developing solutions that are structured in accordance with the embodiments of the present invention, many examples of which are described in detail herein.BRIEF SUMMARY

[0004] In general, embodiments of the present disclosure herein provide for mitigating power dissipation and providing efficient heat transfer in systems using RF resonators that include RF inductor for facilitating power dissipation mitigation and efficient heat transfer.

[0005] In accordance with one aspect of the present disclosure, an example RF inductor for an RF resonator is provided. In some example embodiments, the example RF inductor includes a machined conductive coil defining a hollow interior and having a cross-sectional area configured to facilitate power dissipation mitigation in the RF resonator. The example RF inductor further includes a sapphire dielectric core coupled to the machined conductive coil, where at least a portion of the sapphire dielectric core is positioned within the machined conductive coil and the sapphire dielectric core is configured at least in part to conduct heat away from the sapphire dielectric core.

[0006] In some example embodiments, the sapphire dielectric core extends the entire length of the conductive coil.

[0007] In some example embodiments, the machined conductive coil is formed from copper material.

[0008] In some example embodiments, the machined conductive coil and the sapphire dielectric core have substantially the same shape.

[0009] In some example embodiments, the machined conductive coil is configured to provide mechanical stability based at least in part on the cross-sectional area.

[0010] In some example embodiments, providing mechanical stability includes minimizing oscillations in the machined conductive coil.

[0011] In some example embodiments, the sapphire dielectric core includes a cylindrical shape.

[0012] In some example embodiments, the sapphire dielectric core includes a solid body.

[0013] In some example embodiments, the sapphire dielectric core is further configured to provide support for the machined conductive coil.

[0014] In some example embodiments, at least a portion of the sapphire dielectric core and at least a portion of the machined conductive coil are clamped together.

[0015] In some example embodiments, the RF resonator is configured to generate high frequency voltage signals used to drive an ion trap.

[0016] In some example embodiments, the RF resonator is configured to drive an ion trap of a quantum computing system.

[0017] In some example embodiments, the RF inductor is coupled in series to the ion trap.

[0018] In some example embodiments, the machined conductive coil is etched.

[0019] In some example embodiments, the machined conductive coil is silver plated.

[0020] In accordance with another aspect of the present disclosure, a method for fabricating an RF inductor for an RF resonator is provided. In some example embodiments, the method includes forming, from a monolithic piece of copper using one or more machining techniques, a copper conductive coil defining a hollow interior. The example method further includes forming, from a sapphire material, a sapphire dielectric core. The example method further includes disposing at least a portion of the sapphire dielectric core within the hollow interior defined by the copper conductive coil, and clamping at least a portion of the sapphire dielectric core to a copper base.

[0021] In some example embodiments, the example method further includes etching the copper conductive coil.

[0022] In some example embodiments, the example method further includes silver plating the conductive coil.

[0023] In some example embodiments, disposing at least a portion of the sapphire dielectric core within the hollow interior includes press fitting the sapphire dielectric core within the conductive coil.

[0024] In some example embodiments, the sapphire dielectric core is disposed within the entire length of the conductive coil.BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0025] Having thus described the invention in general terms, reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, and wherein:

[0026] FIG. 1 is a top view of an example atomic object confinement apparatus that may be used in an example embodiment.

[0027] FIG. 2A is a top view of an example RF resonator inductor coupled to a RF resonator circuit board in accordance with an example embodiment.

[0028] FIG. 2B is a side view of an example RF resonator inductor coupled to a RF resonator circuit board in accordance with an example embodiment.

[0029] FIG. 2C is a side view of an example RF resonator inductor coupled to a RF resonator circuit board in accordance with an example embodiment.

[0030] FIG. 2D is a bottom view of an example RF resonator inductor coupled to a RF resonator circuit board in accordance with an example embodiment.

[0031] FIG. 3 is an example circuit of an example RF resonator inductor in a trapped ion processor’s RF resonator in accordance with an example embodiment.

[0032] FIG. 4A is an example RF resonator inductor coupled to a base in accordance with an example embodiment.

[0033] FIG. 4B is an example cross section view of an example RF resonator inductor coupled to a base in accordance with an example embodiment.

[0034] FIG. 5 is an example method for fabricating an RF resonator inductor in accordance with an example embodiment.

[0035] FIG. 6 is a schematic diagram illustrating an example quantum computing system in accordance with an example embodiment.

[0036] FIG. 7 is a schematic diagram of an example controller of a quantum computer in accordance with an example embodiment.

[0037] FIG. 8 is a schematic diagram of an example computing entity of a quantum computer system that may be used in accordance with an example embodiment.DETAILED DESCRIPTION

[0038] The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. Indeed, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term “or” (also denoted “ / ”) is used herein in both the alternative and conjunctive sense, unless otherwise indicated. The terms “illustrative” and “exemplary” are used to be examples with no indication of quality level. The terms “generally” and “approximately” refer to within engineering and / or manufacturing limits and / or within user measurement capabilities, unless otherwise indicated. Like numbers refer to like elements throughout.

[0039] In various embodiments, methods, apparatuses, systems, computer program products, and / or the like provides for generating and providing high RF voltage signals to electric components using RF resonator configuration that enables low power dissipation in the RF resonator and that facilitates efficient heat transfer out of the RF resonator. In various embodiments, to generate sufficient potential to trap ions, strong oscillating fieldsare generated by high voltages applied to RF electrode of the ion trap. Resonators, such as RF resonators, may be used to generate the high voltages required for an ion trap.

[0040] In various embodiments, high RF voltage signals generated using RF resonators may be applied to electrical components (e.g., electrodes) of an ion trap to perform various functions, such as confining atomic objects (e.g., ions) in the ion trap. For example, in various applications, to generate sufficient potential to confine ions in an ion trap, high voltages are applied to RF electrodes of the ion trap. Further, RF signals at relatively high voltages may be required to stabilize ions in an ion trap. RF resonators may be used to generate and provide the high voltages required to drive ion traps, including ion traps in a cryogenic environment (e.g., a cryogenic ion trap). Application of RF voltage signals to a cryogenic ion trap, for example, may enable trapping of ions with reduced noise. In various applications and environments, in order to effectively and efficiently perform the various functions of an ion trap, there is a need for reduced power dissipation in the RF resonator used to drive the ion trap. Further, in order to maintain efficient cooling of components within the cryostat (also referred to herein as cryogenic chamber), there is a need for efficient and effective transfer of heat out of the RF resonator used to drive the ion trap embodied by the cryogenic chamber. Moreover, in various applications and environments, matching the impedance between the voltage source and the ion trap may be required to minimize power dissipation in the RF resonator.

[0041] Various embodiments, of the present invention provide for mitigating power dissipation and facilitating efficient heat transfer out of a RF resonator used to provide high voltage signals to electrical components of a system, such as a system embodying an ion trap. Various embodiments employ an RF inductor configuration that mitigates RF power dissipation. Additionally or alternatively, various embodiments employ an RF inductor configuration that provides efficient and effective heat transfer out of the RF resonator. In an example embodiment, the system is a quantum computer. For example, the system may be a trapped ion quantum computer comprising a cryogenic ion trap. RF signals at high relatively high voltages may be used to generate the electric potential to confine ions in an ion trap of a quantum computing system.Exemplary Atomic Object Confinement Apparatus

[0042] In an example embodiment, the system is or comprises an atomic object confinement apparatus (also referred to as a confinement apparatus herein). In an example embodiment, the confinement apparatus is an ion trap (e.g., a surface ion trap). Forexample, the ion trap may comprise a plurality of electrodes configured to receive electrical signals (e.g., voltages) so as to generate a potential field that controls the confinement and / or movement of one or more atomic objects (e.g., ions) within the ion trap.

[0043] FIG. 1 provides a top schematic view of an example surface ion trap 100. In an example embodiment, the surface ion trap 100 is fabricated as part of an ion trap chip and / or part of an ion trap apparatus and / or package. In an example embodiment, the surface ion trap 100 is at least partially defined by a number of radio-frequency (RF) rails 112 (e.g., 112A, 112B). In various embodiments, the ion trap 100 is at least partially defined by a number of sequences of trapping and / or transport (TT) electrodes 114 (e.g., 114A, 114B, 114C). In an example embodiment, the ion trap 100 is a surface Paul trap with symmetric RF rails. In various embodiments, the potential generating elements of the confinement apparatus comprise the TT electrodes 116 of the sequences of TT electrodes 114 and / or the RF rails 112. In various embodiments, the upper surface of the ion trap 100 has a planarized topology. For example, the upper surface of each RF rail 112 of the number of RF rails 112 and the upper surface of each TT electrode 116 of the number of sequences of TT electrodes 114 may be substantially coplanar.

[0044] In various embodiments, the ion trap 100 comprises and / or is at least partially defined by a number of RF rails 112. The RF rails 112 are formed with substantially parallel longitudinal axes 111 (e.g., 111A, 11 IB) and with substantially coplanar upper surfaces. For example, the RF rails 112 are substantially parallel such that a distance between the RF rails 112 is approximately constant along the length of the RF rails 112 (e.g., the length of an RF rail being along the longitudinal axes 111 of RF rail 112). For example, the upper surfaces of the RF rails 112 may be substantially flush with the upper surface of the ion trap 100. In an example embodiment, the number of RF rails 112 comprises two RF rails 112 (e.g., 112A, 112B). In various embodiments, the ion trap 100 may comprise a plurality of number of RF rails 112. For example, the ion trap 100 may be a two-dimensional ion trap that comprises multiple numbers (e.g., pairs and / or sets) of RF rails 112 with each number (e.g., pair and / or set) of RF rails 112 having substantially parallel longitudinal axes 111. In an example embodiment, a first number of RF rails 112 have mutually substantially parallel longitudinal axes 111, a second number of RF rails 112 have mutually substantially parallel longitudinal axes 111, and the longitudinal axesof the first number of RF rails and the longitudinal axes of the second number of RF rails are substantially non-parallel (e.g., transverse). FIG. 1 illustrates an example one dimensional ion trap 100 having two RF rails 112, though other embodiments may comprise additional RF rails in various configurations.

[0045] In various embodiments, two adjacent RF rails 112 may be separated (e.g., insulated) from one another by a longitudinal gap 105. For example, the longitudinal gap may define (in one or two dimensions) the confinement channel or region of the ion trap 100 in which one or more atomic objects (e.g., ions in the case of the confinement apparatus being an ion trap 100) may be trapped at various locations within the ion trap. In various embodiments, the longitudinal gap 105 defined thereby may extend substantially parallel to the longitudinal axes 111 of the adjacent RF rails 112. For example, the longitudinal gap 105 may extend substantially parallel to the y-axis. In an example embodiment, the longitudinal gap 105 may be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material may be silicon dioxide (e.g., formed through thermal oxidation) and / or other dielectric and / or insulating material. In various embodiments, the longitudinal gap 105 has a height (e.g., in the x-direction) of approximately 40 pm to 500 pm. In various embodiments, one or more sequences of TT electrodes 114 (e.g., a second sequence of TT electrodes 114B) may be disposed and / or formed within the longitudinal gap 105.

[0046] In an example embodiment, a transverse gap may exist between neighboring and / or adjacent electrodes 116 of the one or more sequences of electrodes 114. In an example embodiment, the transverse gap may be empty space and / or at least partially filled with a dielectric material to prevent electrical communication between neighboring and / or adjacent electrodes. In an example embodiment, the transverse gap between neighboring and / or adjacent electrodes may be in the range of approximately 1 - 10 pm.

[0047] In an example embodiment, a longitudinal gap exists between a sequence of TT electrodes 114 and a neighboring and / or adjacent RF rail 112. In an example embodiment, the longitudinal gap may be at least partially filled with a dielectric and / or insulating material to prevent electrical communication between TT electrodes 116 of the sequence of electrodes 114 and the RF rail 112. In an example embodiment, the longitudinal gap between neighboring and / or adjacent electrodes may be in the range of approximately 1 - 10 pm.

[0048] In various embodiments, the ion trap 100 may be at least partially defined by a number of sequences of TT electrodes 114 (e.g., first sequence of TT electrodes 114A, second sequence of electrodes 114B, third sequence of TT electrodes 114C). Each sequence of TT electrodes 114 is formed to extend substantially parallel to the substantially parallel longitudinal axes 111 of the RF rails 112. For example, the number of sequences of TT electrodes 114 may extend substantially parallel to the y-axis as shown in Figure 1. In various embodiments, the number of sequences of TT electrodes 114 comprises two, three, four, and / or another number of sequences of TT electrodes 114. In an example embodiment, the ion trap 100 comprises a plurality of number of sequences of TT electrodes 114. For example, the illustrated ion trap 100 is a one-dimensional ion trap comprising three sequences of TT electrodes 114. For example, the ion trap 100 may be a two-dimensional ion trap that comprises multiple numbers of sequences of TT electrodes 114 that each extend substantially parallel to a substantially parallel longitudinal axes of a corresponding number of RF rails 112. In an example embodiment, a first number of sequences of TT electrodes 114 extend substantially parallel to the substantially parallel longitudinal axes 111 of a first number of RF rails 112, a second number of sequences of TT electrodes 114 extend substantially parallel to the substantially parallel longitudinal axes 111 of a second number of RF rails 112, and the longitudinal axes of the first number of RF rails and the longitudinal axes of the second number of RF rails are substantially non-parallel (e.g., transverse). In some embodiments, each of the TT electrodes 116 of the number of sequences of TT electrodes 114 can be formed with substantially coplanar upper surfaces that are substantially coplanar with the upper surfaces of the RF rails 112.

[0049] In an example embodiment a number (e.g., pair) of RF rails 112 may be formed between a first sequence of TT electrodes 114A and a third sequence of TT electrodes 114C with a second sequence of TT electrodes 114B extending along the longitudinal channel 105 between the RF rails 112. For example, each sequence of TT electrodes 114 may extend in a direction substantially parallel to the longitudinal axes 111 of the RF rails (e.g., in the y-direction). In various embodiments, the upper surfaces of the sequences of TT electrodes 114 are substantially coplanar with the upper surfaces of the RF rails 112.

[0050] In various embodiments, RF signals (e.g., generated using the RF resonator) may be applied to the RF rails 112 to generate an electric and / or magnetic field that acts to maintain an ion trapped within the ion trap 110 in directions transverse to the longitudinal direction of the ion trap 110 (e.g., the x- and z-directions). In various embodiments, TTvoltages may be applied to the TT electrodes 116 to generate a time-dependent electric potential field that causes the objects of the group of objects to traverse corresponding trajectories to perform a deterministic reshaping and / or reordering function. In various embodiments, the number of sequences of TT electrodes 114 may, in combination, be biased, with TT voltages that contribute to a variable combined electrical and / or magnetic field to trap at least one atomic object (e.g., ion) in a potential well above at least one of either an upper surface of the sequences of TT electrodes 114 and / or the RF rails 112. For example, the electrical and / or magnetic field generated at least in part by voltages applied to the TT electrodes of the sequences of TT electrodes 114 may trap at least one atomic object in a potential well above the upper surface of the second sequence of TT electrodes 114B and / or the longitudinal gap 105. Additionally, the TT voltages applied to the electrodes 116 may cause ions trapped within the potential well above the upper surface of the second sequence of TT electrodes 114B and / or the longitudinal gap 105 to traverse trajectories corresponding to various functions of the ion trap.

[0051] Depending on factors such as the charge on the at least one atomic object and / or the shape and / or magnitude of the combined electrical and / or magnetic fields, the at least one atomic object can be stabilized at a particular distance (e.g., approximately 20 pm to approximately 200 pm) above an upper surface of the ion trap 100 (e.g., the coplanar upper surface of the sequences of TT electrodes 114 and RF rails 112). To further contribute to controlling the transit of atomic objects along desired trajectories, the ion trap 100 may be operated within a cryogenic and / or vacuum chamber capable of cooling the ion trap to a temperature of less than 124 Kelvin (e.g., less than 100 Kelvin, less than 50 Kelvin, less than 10 Kelvin, less than 5 Kelvin, and / or the like), in various embodiments.

[0052] In various embodiments, the RF rails 112, the sequences of electrodes 114, and / or the confinement potential generated by the RF rails and / or the sequences of electrodes 114 define a confinement plane 103 of the ion trap. In various embodiments, the RF rails 112, the sequences of electrodes 114, and / or the confinement potential generated by the RF rails and / or the sequences of electrodes 114 define an axis 101 of the ion trap.

[0053] In various embodiments, the TT voltages applied to the TT electrodes 116 are controlled by one or more connected devices (e.g., a controller 30 as shown in Figure 6 and / or the like) via leads. For example, depending on the positive or negative charge on at least one atomic object, TT voltages may be raised or lowered for TT electrodes 116 in the vicinity of a particular ion to cause the particular ion to traverse a desired trajectory.For example, a controller 30 may control a voltage driver to cause the voltage driver to apply TT voltages to the TT electrodes to generate a time-dependent electric potential (e.g., an electric potential that evolves with time) that causes various functions of the ion trap to be performed (e.g., transporting atomic objects from one location within the ion trap to another location in the ion trap, maintaining an atomic object in a particular location within the ion trap so that quantum logic gate may be performed on the atomic object, causing two atomic objects to swap positions within the ion trap, cause two atomic objects to move close together, cause two atomic objects that are close together to move apart from one another, and / or the like).

[0054] In various embodiments, the ion trap 100 may further comprise a plurality of TT leads, wire bonds, interconnects, and / or the like (not shown). For example, the TT leads may enable electrical communication between a TT voltage driver and / or voltage source and a corresponding one of the TT electrodes. For example, a TT electrode may be biased with a TT voltage generated and / or provided by a TT voltage driver and / or voltage source via a corresponding one of the TT leads. The ion trap 100 may further comprise RF leads, wire bonds, interconnects, and / or the like (not shown). For example, the RF leads may enable electrical connection between an RF driver and / or voltage source and the RF rails 112. For example, the RF rails 112 may be biased with a voltage that alternates at an RF rate and that is generated and / or provided by an RF driver and / or voltage source via RF leads.

[0055] In various embodiments, the ion trap 100 of a quantum computer is disposed within a cryogenic chamber. In various embodiments, the cryogenic chamber defines an action chamber. In an example embodiment, the ion trap 100 is disposed within the action chamber of the cryogenic chamber. One or more actions may be performed within the action chamber at a corresponding action temperature. For example, the one or more actions may include performing an experiment, a controlled state evolution, a chemical reaction, performing a function, and / or the like. In an example embodiment, the ion trap 100 of an ion trapped quantum computer 610 is disposed within the action chamber. In an example embodiment, the cryogenic chamber is coupled to a cryogenic system configured to maintain the action chamber at an action temperature. In various embodiments, the action temperatures are cryogenic temperatures (e.g., within the range of 0 K to 124 K).

[0056] In various embodiments, an RF resonator used to drive an ion trap 100 may be embodied by an RF circuit or otherwise form part of an RF circuit. In variousembodiments, an RF circuit may comprise an RF inductor and an ion trap 100. The ion trap may act as a capacitive device (e.g., capacitor). In various embodiments, the inductor and the ion trap 100 are connected in series. In various embodiments, the inductor and the ion trap 100 are connected in parallel. In various embodiments, a circuit board (e.g., an RF resonator circuit board) may embody at least a portion of an RF circuit.

[0057] FIG. 2A is a top view of a RF resonator inductor 200 coupled to a RF resonator circuit board 210, according to an example embodiment. In some embodiments, the RF resonator circuit board 210 is a cryogenic RF resonator circuit board. FIG. 2B is a side view of the RF resonator inductor 200 according to an example embodiment. FIG. 2C is a side view of the RF resonator inductor 200 according to an example embodiment, and FIG 2D is a bottom view of the RF resonator inductor 200 according to an example embodiment. Circuit board 210 may include mounting holes for coupling the circuit board 210 to a housing and / or other components of the quantum computing system. As depicted in FIG. 2 A, circuit board 210 may include various RF input and output components, such as RF input port 250, RF input connector 245, RF output port 255, and / or RF output connector 225. In various embodiments, circuit board 210 may include one or more voltage pickoff capacitors 235 and / or RF voltage pickoff connector 240. In various embodiments, the one or more voltage pickoff capacitors 235 may be used to monitor voltage. In various embodiments, the circuit board 210 may include at least one impedance matching capacitor 265. In various embodiments, circuit board 210 may include various circuit components to modify an input RF signal received at the RF input port 250.

[0058] As shown in FIGS. 2A-2D, inductor 200 may include a dielectric core 215 and a conductive coil 205 surrounding at least a portion of dielectric core 215. The dielectric materials and / or other materials used for components of the inductor 200 may be selected to provide stable characteristics over temperature, voltage, and RF frequency ranges used in operation of ion traps, such as cryogenic ion traps. For example, the dielectric materials and other materials used for components of the inductor 200 may be selected to minimize RF power dissipation and improve heat transfer out of the RF resonator. Additionally or alternatively, the fabrication method for the conductive coil 205 and / or other components of the inductor 200 may be selected to maintain mechanical stability of the inductor 200 and to provide stable characteristics over temperature, voltage, and RF frequency ranges used in operation of cryogenic ion traps. For example, in some embodiments, theconductive coil 205 and / or other components of the inductor 200 may be fabricated utilizing method(s) that provides mechanical stability, reduces RF power dissipation and / or improves heat transfer out of the RF resonator (e.g., heat transfer from the conductive coil 205 to the dielectric core 215, wherein the dielectric core may act as a heat sink).

[0059] As shown in FIGS. 2A-2D, conductive coil 205 may define a hollow interior having a desired shape. Conductive coil 205, for example, may define a hollow interior having a cylindrical shape as depicted in FIGS. 2A-2D. However, it would be appreciated that in other embodiments, conductive coil 205 may define a hollow interior having other shapes (e.g., rectangular, spherical, and / or the like). In various embodiments and as depicted in FIGS. 2A-2D, at least a portion of the dielectric core 215 may be disposed within the hollow interior defined by the conductive coil 205. Conductive coil 205 may comprise a desired number of turns having, for example, a spherical pattern. The number of turns in conductive coil 205 may be selected based at least in part on the total capacitance of the ion trap and / or the desired magnetic field strength.

[0060] In various embodiments, conductive coil 205 may be formed from a nonferromagnetic material, such as copper, aluminum, and / or the like. It would be appreciated, however, that conductive coil 205 may be formed from other materials. In various embodiments and as depicted in FIGS. 2A-2D, conductive coil 205 may be formed from a solid piece of conductive material. For example, the conductive coil 205 may be formed from a monolithic piece of copper (or other non-ferromagnetic material). In some embodiments, conductive coil 205 may be etched to remove surface contamination. Additionally or alternatively, in some embodiments, conductive coil 205 may comprise one or more layers. For example, in some embodiments, conductive coil 205 may be plated, coated, and / or the like. In an example embodiment, conductive coil 205 may be formed from copper, and may be plated (e.g., silver plated, gold plated, and / or the like). In another example embodiment, conductive coil 205 may be formed from aluminum, and may be plated (e.g., silver plated, gold plated, and / or the like). It would be appreciated that the conductive coil 205 may be formed from one or more of a variety of materials and may be plated with one of more of a variety of materials.

[0061] In various embodiments, conductive coil 205 is fabricated by machining (e.g., computer numerical machining control (CNC) electric discharge machining (EDM), and / or the like) a monolithic piece of copper (or other non-ferromagnetic material), whichin turn provides increased mechanical stability (relative to some other fabrication methods), improves resonator frequency stability and improves RF voltage stability of the ion trap. For example, by forming the conductive coil 205 via machining, conductive coil 205 may be relatively rigid, which in turn provides mechanical stability and eliminates negative effects in the electrical properties of the RF resonator that would otherwise be generated by some other example fabrication methods. For example, machined conductive coil 205 according to various embodiments minimizes or eliminates mechanical oscillations in the inductor 200. In various embodiments, fabricating conductive coil 205 by machining a monolithic piece of copper enables a wider cross-sectional area and a wider contact area between conductive coil 205 and dielectric core 215. In various embodiments, the wider cross sectional area advantageously decreases conductor loss. In various embodiments, the wider contact area between conductive coil 205 and the dielectric core 215 advantageously improves heat sinking / heat transfer. In this way, power dissipation is decreased and heat transfer in the RF resonator is improved. For example, power dissipation in the RF resonator, and thus in the quantum computer system, is mitigated based at least in part on machining the conductive coil 205. In various embodiments, a machined inductor (e.g., machined conductive coil thereof) enables a cross-sectional area of the RF inductor configured to facilitate power dissipation mitigation in the RF resonator. In various embodiments, power dissipation in the RF resonator may be determined based on performing the operations of the equation below.Equation 1

[0062] In equation 1, (i) Pdispmay represent power dissipation in the RF resonator; (ii) ^conductor may represent conductor loss; and (iii) — — tan 8dietectricmay representdielectric loss. In various embodiments, the machined conductive coil 205 is configured to provide mechanical stability (e.g., in the inductor) based at least in part on a wide cross- sectional area enabled by machining at least the conductive coil 205. In various embodiments, providing mechanical stability comprises minimizing oscillations in the inductor (e.g., machined conductive coil thereof). Further, in various embodiments, heat transfer in the RF resonator, and thus in the quantum computer system, is improved basedat least in part on machining the conductive coil 205. As such, fabricating the conductive coil 205 via machining improves operation of the ion trap and the quantum computing system.

[0063] In various embodiments, dielectric core 215 may comprise a solid body configured to provide support for conductive coil 205, which contributes further to the rigidness of the conductive coil 205. For example, dielectric core 215 may minimize or eliminate mechanical oscillations in the inductor 200. In various embodiments, the dielectric used in dielectric core 215 may be selected to provide mechanical stability for the conductive coil 205 and a desired dielectric constant. For example, the dielectric core 215 may include materials to provide consistent dielectric properties (e.g., a narrow range of dielectric constant values) within cryogenic operating conditions, such as between approximately 0 Kelvin and approximately 124 Kelvin.

[0064] As shown in FIGS. 2A-2D, dielectric core 215 may be configured to be disposed (e.g., at least partially) within the hollow interior defined by conductive coil 205. In various embodiments, disposing the dielectric core within the hollow interior comprises press fitting the dielectric core within the conductive coil. In various embodiments, the dielectric core 215 may extend at least the entire length of the conductive coil (e.g., within the conductive coil 205). In various embodiments, the dielectric core 215 may have a shape that is substantially similar to the shape of conductive coil 205 (e.g., shape defined by the hollow interior thereof). For example, in the depicted embodiment of FIGS. 2A-2D, having a cylindrical shaped conductive coil 205, the dielectric core 215 may also have a cylindrical shape. As would be appreciated, dielectric core 215 may have other shapes (e.g., spherical, annular, rectangular, and / or the like) in other embodiments. Further, in some embodiments, conductive coil 205 and dielectric core 215 may have different shapes.

[0065] In various embodiments, dielectric core 215 is formed from dielectric material having properties (e.g., thermal conductivity, thermal diffusivity) that facilitates heat transfer in the RF resonator. For example, in various embodiments, the material of the dielectric core 215 may be selected to conduct heat away from the inductor 200 and into a cryogenic cooling system. For example, in various embodiments, the dielectric core 215 may act or otherwise function as a heat sink. In various embodiments, the dielectric core 215 is formed from sapphire having properties (e.g., thermal conductivity, thermal diffusivity) that enables heat to be efficiently and effectively conducted away from the inductor 200 and into the cryogenic cooling system. As such, the sapphire dielectric core215 may function as a heat sink configured at least in part for transferring heat generated in the inductor 200 out of the inductor 200. In various embodiments, the configuration of inductor 200 (e.g., sapphire dielectric core 215 thereof) obviates the need for an epoxy or other thermally conductive substrate that may be a source of contamination in the quantum computing system that reduces the performance of the system. It would be appreciated that in some other embodiments, dielectric core 215 may be formed from other suitable materials. For example, in some embodiments, dielectric core 215 may be formed from ceramic materials, such as quartz. By way of example, at cryogenic temperature range, sapphire generally has a relatively high thermal diffusivity that enables the sapphire dielectric core 215 of the inductor 200 to function effectively and efficiently as a heat sink for conducting heat out of the RF resonator into, for example, a cryogenic cooling system.

[0066] FIG. 3 provides an example circuit 300 of example RF resonator inductor 200 in a trapped ion processor’s RF resonator in accordance with an example embodiment. The circuit 300 may include an RF resonator that includes a RF resonator inductor 200 with a resistance (R) 320 and an ion trap with ion trap capacitance 330. The circuit 300 may include an impedance matching network. The impedance matching network may be configured to provide impedance matching of the voltage input to the RF resonator. The impedance matching network may include one or more of a variety of impedance matching network configurations. As shown in FIG. 3, the impedance matching network includes at least one impedance matching capacitor 265. In some examples, the impedance matching network may include an L-network impedance matching configuration.

[0067] In an example, a network analyzer may be used to determine the real and / or imaginary parts of impedance of an ion trap, and the impedance of inductor 200 and / or capacitor 265 may be selected to match the ion trap impedance. In some examples, for cryogenic applications, the real part of the ion trap impedance and the real part of the cryogenic resonator impedance is expected to change as the operating temperature is decreased. To address this temperature dependence of the real part of the impedance, multiple impedance measurements may be taken as the device is cooled, and the multiple impedance measurements may be used to extrapolate impedance values for the ion trap at various operating temperatures. Based on the measured and extrapolated impedance values for the ion trap at various operating temperatures, the impedance of inductor 200 may be selected to match the ion trap impedance at a specified operating frequency. The capacitor265 may be selected to match the impedance of the resonant RF circuit to the input transmission line

[0068] In various embodiments, inductor leads (not shown) of inductor 200 may be routed from the inductor 200 to corresponding contacts on a cryogenic RF resonator circuit board, such as circuit board 210. In various embodiments, one or more of the components of the RF resonator circuit board may be removable or replaceable with a different component. For example, in some embodiments, the selection of the impedance matching capacitor(s) 265 may provide a desired capacitance, which may be used to modify the cryogenic RF resonator to provide an impedance that matches an ion trap. In various embodiments, matching impedance may be adjusted to improve matching of a transmission line to the RF resonator.

[0069] In operation, the cryogenic RF resonator may be used to verify the cryogenic RF resonator is impedance-matched to an ion trap. For example, cryogenic RF resonator may be connected to an ion trap, the cryogenic RF resonator and ion trap may be cooled to a low cryogenic temperature (e.g., 4 Kelvin), and a network analyzer may be used to measure power reflected from the ion trap. This measured power may be used to determine an internal quality factor (e.g., resonator loss measurement), which may be used to verify that the cryogenic RF resonator is properly impedance-matched to ion trap.

[0070] FIG. 4A is an example RF resonator inductor coupled to a base in accordance with an example embodiment. FIG. 4B is an example cross section view of an example RF resonator inductor coupled to a base in accordance with an example embodiment. In various embodiments and as shown in FIGS. 4 A and 4B, at least one end 420 of the dielectric core 215 of the RF resonator inductor 200 is coupled to a base 410. For example, in various embodiments, at least one end of the dielectric core is clamped and / or press fit into a base 410. In various embodiments, the base 410 is configured to be heat sunk to a cryogenic stage. For example, the base 410 may serve as a heat sink. In various embodiments, the base 410 is a copper base. For example, in various embodiments, the base 410 is formed from copper material. It would be appreciated, however, that in various other embodiments, the base may be formed from other suitable material.

[0071] FIG. 5 provides a flowchart of an example method for fabricating an RF resonator inductor, such as RF resonator inductor 200. Starting at step / operation 502, a conductive coil having a desired number of turns and a hollow interior may be formed from amonolithic piece of copper using one or more machining techniques. In various embodiments, the monolithic piece of copper is pure copper. In some embodiments, the conductive coil may be machined using computer numerical control (CNC) machining, electrical discharge machining (EDM), and / or the like. The monolithic piece of copper conductive material may be machined to generate a copper conductive coil having a hollow interior that defines a desired shape (e.g., cylindrical, rectangular, and / or the like). In some embodiments, the conductive coil may be formed from other conductive material.

[0072] At step / operation 504, the conductive coil may be etched to remove surface contamination.

[0073] At step / operation 506, the conductive coil may be coated and / or plated. For example in some embodiments, a copper conductive coil may be silver plated. In some embodiments, the conductive coil may not be coated and may not be plated.

[0074] At step / operation 508, a dielectric core is formed from sapphire material. For example, a block of sapphire may be formed into a solid body having a desired shape. In various embodiments, the sapphire dielectric core is formed using one or more machining techniques. In various embodiments, the sapphire dielectric core is formed into a shape that is substantially the same as the shape defined by the hollow interior of the conductive coil. For example, in some embodiments, the sapphire dielectric core may take the form of a rod (e.g., sapphire rod). In some embodiments, the dielectric core may be formed from other dielectric material.At step / operation 510, at least a portion of the sapphire dielectric core is disposed within the hollow interior defined by the conductive coil. In various embodiments, disposing at least a portion of the sapphire dielectric core within the hollow interior comprises press fitting the sapphire dielectric core within the conductive coil. In various embodiments, the sapphire dielectric core may be fixedly positioned within the conductive coil. In some embodiments, at least a portion of the sapphire dielectric core and the conductive coil are clamped together. In some embodiments, the sapphire dielectric core is clamped to the conductive coil at one end. In some embodiments, the sapphire dielectric core is clamped to the conductive coil at both ends. In some embodiments, clamping the sapphire dielectric core to the conductive coil may act as the conductive heat transfer pathway.

[0075] At step / operation 512, at least one end of the sapphire dielectric core is coupled to a base. For example, in various embodiments, at least one end of the sapphire dielectric core is clamped and / or press fit into a base. In various embodiments, the base is configuredto be heat sunk to a cryogenic stage. For example, the base may serve as a heat sink. In various embodiments, the base is a copper base. For example, in various embodiments, the base is formed from copper material. It would be appreciated, however, that in various other embodiments, the base may be formed from any suitable material.Technical Advantages

[0076] Various embodiments provide technical solutions to the technical problem of generating and providing signals to a system that cause the system to perform different functions. In various embodiments, methods, apparatuses, systems, computer program products, and / or the like provides for generating and providing high RF voltage signals to electric components using RF resonator configuration that enables low power dissipation in the RF resonator and that facilitates efficient heat transfer out of the RF resonator. In various embodiments, to generate sufficient potential to trap ions, strong oscillating fields are generated by high voltages applied to RF electrode of the ion trap. Resonators may be used to generate the high voltages required for an ion trap. In various embodiments, high RF voltage signals generated using RF resonators may be applied to electrical components (e.g., electrodes) of an ion trap to perform various functions, such as confining atomic objects (e.g., ions) in the ion trap. For example, in various applications, to generate sufficient potential to confine ions in an ion trap, high voltages are applied to RF electrodes of the ion trap. Further, RF signals at relatively high voltages may be required to stabilize ions in an ion trap. RF resonators may be used to generate and provide the high voltages required to drive ion traps, including ion traps in a cryogenic environment (e.g., a cryogenic ion trap). In various applications and environments, in order to effectively and efficiently perform the various functions of an ion trap, there is a need for reduced power dissipation in the RF resonator used to drive the ion trap. Further, in order to maintain efficient cooling of the cryostat (also referred to herein as cryogenic chamber), there is a need for efficient and effective transfer of heat out of the RF resonator used to drive the ion trap embodied by the cryogenic chamber. Moreover, in various applications and environments, matching the impedance between the voltage source and the ion trap may be required to minimize power dissipation in the RF resonator. Various embodiments, of the present invention provide for mitigating power dissipation and facilitating efficient heat transfer out of a RF resonator used to provide high voltage signals to electrical components of a system, such as a system embodying an ion trap. Various embodiments employ an RF inductor configuration that mitigates RF power dissipation. Additionally oralternatively, various embodiments employ an RF inductor configuration that provides efficient and effective heat transfer out of the RF resonator.Exemplary Quantum Computer Comprising an Ion Trap Apparatus

[0077] As described above, the RF resonator (e.g., comprising a machined sapphire core RF inductor) may be part of a quantum computer 610. For example, RF resonators comprising machined sapphire core RF inductor may be used to generate high RF voltages signals applied to electrodes (e.g., electrodes 114) of an ion trap that traps atomic objects used as the qubits of the quantum computer 610. FIG. 6 provides a schematic diagram of an example quantum computer system 600 comprising a confinement apparatus (e.g., ion trap 100), in accordance with an example embodiment. In various embodiments, the quantum computer system 600 comprises a computing entity 10 and a quantum computer 610. In various embodiments, the quantum computer 610 comprises a controller 30, a cryogenic chamber 40 (also referred to herein as a cryostat) enclosing a confinement apparatus (e.g., ion trap 100). In an example embodiment, the cryogenic chamber 40 and / or a portion thereof is also a vacuum chamber. In an example embodiment, the quantum computer 610 may also include one or more manipulation sources 60. In an example embodiment, the one or more manipulation sources 60 may comprise one or more lasers (e.g., optical lasers, microwave sources, and / or the like). Beams, pulses, fields, and / or the like generated by the manipulation sources 60 may be provided to the ion trap 100 via one or more optical paths 66 (e.g., 66 A, 66B, 66C) in an example embodiment. In various embodiments, the one or more manipulation sources 60 are configured to manipulate and / or cause a controlled quantum state evolution of one or more atomic objects within the confinement apparatus. For example, in an example embodiment, wherein the one or more manipulation sources 60 comprise one or more lasers, the lasers may provide one or more laser beams to the confinement apparatus within the cryogenic chamber 40. In various embodiments, the quantum computer 610 comprises one or more voltage sources 50. For example, the voltage sources 50 may comprise a plurality of TT voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. The voltage sources 50 may be electrically coupled to the corresponding potential generating elements (e.g., TT electrodes 116) of the confinement apparatus (e.g., ion trap 100).

[0078] In various embodiments, a computing entity 10 is configured to allow a user to provide input to the quantum computer 610 (e.g., via a user interface of the computing entity 10) and receive, view, and / or the like output from the quantum computer 610. Thecomputing entity 10 may be in communication with the controller 30 of the quantum computer 610 via one or more wired or wireless networks 820 and / or via direct wired and / or wireless communications. In an example embodiment, the computing entity 10 may translate, configure, format, and / or the like information / data, quantum computing algorithms, and / or the like into a computing language, executable instructions, command sets, and / or the like that the controller 30 can understand and / or implement.

[0079] In various embodiments, the controller 30 is configured to control the ion trap 100, voltage sources 50, cryogenic system and / or vacuum system controlling the temperature and pressure within the cryogenic and / or vacuum chamber 40, manipulation sources 60, and / or other systems controlling various environmental conditions (e.g., temperature, pressure, and / or the like) within the cryogenic and / or vacuum chamber 40 and / or configured to manipulate and / or cause a controlled evolution of quantum states of one or more atomic objects within the confinement apparatus. For example, the controller 30 may cause a controlled evolution of quantum states of one or more atomic objects within the confinement apparatus to execute a quantum circuit and / or algorithm. As another example, a cryogenic system may be configured to maintain an action chamber (e.g., within a cryogenic chamber) at the action temperature. In various embodiments, the action temperature is a cryogenic temperature (e.g., in the range of approximately 124 K to 0 K) and the cryogenic system is a cryogenic cooling system. In various embodiments, the cryogenic system also comprises a vacuum system configured to maintain a main chamber and / or the action chamber at a particular pressure. In various embodiments, the controller 30 is configured to control various components of the quantum computer 610 in accordance with executable instructions, command sets, and / or the like provided by the computing entity 10. In various embodiments, the controller 30 is configured to receive output from the quantum computer 610 (e.g., from an optical collection system) and provide the output and / or the result of a processing the output to the computing entity 10. In various embodiments, the atomic objects confined within the confinement apparatus are used as qubits of the quantum computer 610.Exemplary .Controller

[0080] As shown in FIG. 7, in various embodiments, the controller 30 may comprise various controller elements including processing elements 705, memory 710, driver controller elements 715, a communication interface 720, analog-digital converter elements 725, and / or the like. For example, the processing elements 705 may compriseprogrammable logic devices (PLDs), complex PLDs (CPLDs), microprocessors, coprocessing entities, application-specific instruction-set processors (ASIPs), integrated circuits, application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, other processing devices and / or circuitry, and / or the like, and / or controllers. The term circuitry may refer to an entirely hardware embodiment or a combination of hardware and computer program products. In an example embodiment, the processing element 705 of the controller 30 comprises a clock and / or is in communication with a clock.

[0081] For example, the memory 710 may comprise non-transitory memory such as volatile and / or non-volatile memory storage such as one or more of as hard disks, ROM, PROM, EPROM, EEPROM, flash memory, MMCs, SD memory cards, Memory Sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. In various embodiments, the memory 710 may store qubit records corresponding the qubits of quantum computer (e.g., in a qubit record data store, qubit record database, qubit record table, and / or the like), a calibration table, an executable queue, computer program code (e.g., in a one or more computer languages, specialized controller language(s), and / or the like), and / or the like. In an example embodiment, execution of at least a portion of the computer program code stored in the memory 710 (e.g., by a processing element 705) causes the controller 30 to perform one or more steps, operations, processes, procedures and / or the like described herein for applying signals with dynamically shaped noise to electrodes of the ion trap 100 for performance of a function that corresponds to the dynamically shaped noise.

[0082] In various embodiments, the driver controller elements 715 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, the driver controller elements 715 may comprise drivers and / or driver controllers. For example, the driver controllers may be configured to cause one or more corresponding drivers to be operated in accordance with executable instructions, commands, and / or the like scheduled and executed by the controller 30 (e.g., by the processing element 705). In various embodiments, the driver controller elements 715 may enable the controller 30 to operate a manipulation source 60. In various embodiments, the drivers may be laser drivers; vacuum component drivers; drivers for controlling the flowof current and / or voltage applied to TT, RF, (e.g., voltage sources 50), and / or other electrodes used for maintaining and / or controlling the ion trapping potential of the ion trap 100 (and / or other driver for providing driver action sequences to potential generating elements of the confinement apparatus); drivers for controlling the operating response of one or more filters; cryogenic and / or vacuum system component drivers; and / or the like. For example, the drivers may control and / or comprise TT and / or RF voltage drivers and / or voltage sources that provide voltages and / or electrical signals to the TT electrodes 116 and / or RF rails 112. In various embodiments, the controller 30 comprises means for communicating and / or receiving signals from one or more optical receiver components such as cameras, MEMs cameras, CCD cameras, photodiodes, photomultiplier tubes, and / or the like. For example, the controller 30 may comprise one or more analog-digital converter elements 725 configured to receive signals from one or more optical receiver components, calibration sensors, and / or the like. In various embodiments, the controller 30 may comprise a communication interface 720 for interfacing and / or communicating with a computing entity 10. For example, the controller 30 may comprise a communication interface 720 for receiving executable instructions, command sets, and / or the like from the computing entity 10 and providing output received from the quantum computer 610 (e.g., from an optical collection system) and / or the result of a processing the output to the computing entity 10. In various embodiments, the computing entity 10 and the controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 820.Exemplary .Computing. Entity

[0083] Figure 8 provides an illustrative schematic representative of an example computing entity 10 that can be used in conjunction with embodiments of the present invention. In various embodiments, a computing entity 10 is configured to allow a user to provide input to the quantum computer 610 (e.g., via a user interface of the computing entity 10) and receive, display, analyze, and / or the like output from the quantum computer 610.

[0084] As shown in FIG. 8, a computing entity 10 can include an antenna 812, a transmitter 804 (e.g., radio), a receiver 806 (e.g., radio), and a processing element 808 that provides signals to and receives signals from the transmitter 804 and receiver 806, respectively. The signals provided to and received from the transmitter 804 and the receiver 806, respectively, may include signaling information / data in accordance with anair interface standard of applicable wireless systems to communicate with various entities, such as a controller 30, other computing entities 10, and / or the like. In this regard, the computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types. For example, the computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as fiber distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, data over cable service interface specification (DOCSIS), or any other wired transmission protocol. Similarly, the computing entity 10 may be configured to communicate via wireless external communication networks using any of a variety of protocols, such as general packet radio service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 IX (IxRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division-Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High Speed Packet Access (HSPA), High-Speed Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), ultra wideband (UWB), infrared (IR) protocols, near field communication (NFC) protocols, Wibree, Bluetooth protocols, wireless universal serial bus (USB) protocols, and / or any other wireless protocol. The computing entity 10 may use such protocols and standards to communicate using Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), HyperText Markup Language (HTML), and / or the like.

[0085] Via these communication standards and protocols, the computing entity 10 can communicate with various other entities using concepts such as Unstructured Supplementary Service information / data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi -Frequency Signaling (DTMF),and / or Subscriber Identity Module Dialer (SIM dialer). The computing entity 10 can also download changes, add-ons, and updates, for instance, to its firmware, software (e.g., including executable instructions, applications, program modules), and operating system.

[0086] The computing entity 10 may also comprise a user interface device comprising one or more user input / output interfaces (e.g., a display 816 and / or speaker / speaker driver coupled to a processing element 808 and a touch screen, keyboard, mouse, and / or microphone coupled to a processing element 808). For instance, the user output interface may be configured to provide an application, browser, user interface, interface, dashboard, screen, webpage, page, and / or similar words used herein interchangeably executing on and / or accessible via the computing entity 10 to cause display or audible presentation of information / data and for interaction therewith via one or more user input interfaces. The user input interface can comprise any of a number of devices allowing the computing entity 10 to receive data, such as a keypad 818 (hard or soft), a touch display, voice / speech or motion interfaces, scanners, readers, or other input device. In embodiments including a keypad 818, the keypad 818 can include (or cause display of) the conventional numeric (0-9) and related keys (#, *), and other keys used for operating the computing entity 10 and may include a full set of alphabetic keys or set of keys that may be activated to provide a full set of alphanumeric keys. In addition to providing input, the user input interface can be used, for example, to activate or deactivate certain functions, such as screen savers and / or sleep modes. Through such inputs the computing entity 10 can collect information / data, user interaction / input, and / or the like.

[0087] The computing entity 10 can also include volatile storage or memory 822 and / or non-volatile storage or memory 824, which can be embedded and / or may be removable. For instance, the non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMCs, SD memory cards, Memory Sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and / or the like. The volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. The volatile and non-volatile storage or memory can store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, and / or the like to implement the functions of the computing entity 10.Conclusion

[0088] Many modifications and other embodiments of the invention set forth herein will come to mind to one skilled in the art to which the invention pertains having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. Therefore, it is to be understood that the invention is not to be limited to the specific embodiments disclosed and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

CLAIMSWhat is claimed is:

1. A radio-frequency (RF) inductor for an RF resonator, the RF inductor comprising: a machined conductive coil defining a hollow interior, and having a cross- sectional area configured to facilitate power dissipation mitigation in the RF resonator; and a sapphire dielectric core coupled to the machined conductive coil, wherein: at least a portion of the sapphire dielectric core is positioned within the machined conductive coil, and the sapphire dielectric core is configured at least in part to conduct heat away from the sapphire dielectric core.

2. The RF inductor of claim 1, wherein the sapphire dielectric core extends the entire length of the conductive coil.

3. The RF inductor of claim 1, wherein the machined conductive coil is formed from copper material.

4. The RF inductor of claim 1, wherein the machined conductive coil and the sapphire dielectric core have substantially the same shape.

5. The RF inductor of claim 1, wherein the machined conductive coil is configured to provide mechanical stability based at least in part on the cross-sectional area.

6. The RF inductor of claim 5, wherein providing mechanical stability comprises minimizing oscillations in the machined conductive coil.

7. The RF inductor of claim 1, wherein the sapphire dielectric core comprises a cylindrical shape.

8. The RF inductor of claim 1, wherein the sapphire dielectric core comprises a solid body.

9. The RF inductor of claim 1, wherein the sapphire dielectric core is further configured to provide support for the machined conductive coil.

10. The RF inductor of claim 1, wherein at least a portion of the sapphire dielectric core and at least a portion of the machined conductive coil are clamped together.

11. The RF inductor of claim 1, wherein the RF resonator is configured to generate high frequency voltage signals used to drive an ion trap.

12. The RF inductor of claim 11, wherein the RF resonator is configured to drive an ion trap of a quantum computing system.

13. The RF inductor of claim 11, wherein the RF inductor is coupled in series to the ion trap.

14. The RF inductor of claim 12, wherein the machined conductive coil is etched.

15. The RF inductor of claim 14, wherein the machined conductive coil is silver plated.

16. A method for fabricating an RF inductor for an RF resonator, the method comprising: forming, from a monolithic piece of copper using one or more machining techniques, a copper conductive coil defining a hollow interior; forming, from a sapphire material, a sapphire dielectric core; disposing at least a portion of the sapphire dielectric core within the hollow interior defined by the copper conductive coil; and clamping at least a portion of the sapphire dielectric core to a copper base.

17. The method of claim 16, further comprising etching the copper conductive coil.

18. The method of claim 16, further comprising silver plating the conductive coil.

19. The method of claim 16 , wherein disposing at least a portion of the sapphire dielectric core within the hollow interior comprises press fitting the sapphire dielectric core within the conductive coil.

20. The method of claim 16, wherein the sapphire dielectric core is disposed within the entire length of the conductive coil.

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