Rotating element and substrate holder for electroplating

EP4767364A1Pending Publication Date: 2026-07-01LAM RES CORP

Patent Information

Authority / Receiving Office
EP · EP
Patent Type
Applications
Current Assignee / Owner
LAM RES CORP
Filing Date
2024-08-21
Publication Date
2026-07-01

AI Technical Summary

Technical Problem

Existing electroplating technologies face challenges in achieving uniform metal deposition on semiconductor wafers, particularly in controlling plating uniformity and throughput.

Method used

The use of a rotating substrate holder and an ionically-resistive ionically-permeable element that allows for the flow of ionic current towards the substrate during electroplating, while maintaining alignment and rotation with the substrate holder to eliminate tolerance stackup and promote uniform plating.

Benefits of technology

This approach enhances plating uniformity on a die level, improves throughput, and addresses within-die non-uniformity challenges by tailoring the current distribution through the use of a patterned ionically-resistive ionically-permeable element.

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Abstract

Methods and apparatus for electroplating metal onto a substrate are provided herein. For instance, such an electrodeposition apparatus may include: (a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate; (b) a substrate holder configured to hold the substrate and maintain separation between a plating face of the substrate and the anode during electroplating; and (c) an ionically-resistive ionically-permeable element including a substrate-facing surface and an opposing surface, where the ionically-resistive ionically-permeable element allows for flow of ionic current through the ionically-resistive ionically-permeable element towards the substrate during electroplating, and where the ionically-resistive ionically-permeable element and the substrate holder are configured to mate with one another and rotate together relative to the plating chamber.
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Description

ROTATING ELEMENT AND SUBSTRATE HOLDER FOR ELECTROPLATINGINCORPORATION BY REFERENCE

[0001] A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in its entirety and for all purposes.FIELD OF THE INVENTION

[0002] The present disclosure relates generally to a method and apparatus for electroplating a metal layer on a semiconductor wafer. More particularly, the method and apparatus described herein are useful for controlling plating uniformity while providing high throughput.BACKGROUND

[0003] In semiconductor device manufacturing, a conductive material such as copper is often deposited by electroplating onto a seed layer of metal to fill one or more recessed features on a semiconductor wafer substrate. Electroplating is a method of choice for depositing metal into the vias and trenches of the wafer during damascene processing, and is also used in wafer level packaging (WLP) applications to form pillars and lines of metal on the wafer substrate. Another application of electroplating is filling of Through-Silicon Vias (TSVs), which are relatively large vertical electrical connections used in 3D integrated circuits and 3D packages.

[0004] In some electroplating substrates, the seed layer is exposed over the entire surface of the substrate prior to electroplating (typically in damascene and TSV processing), and electrodeposition of metal occurs over the entirety of the substrate. In other electroplating substrates, a portion of the seed layer is covered by a non-conducting mask material, such as by photoresist, while another portion of the seed layer is exposed. In such substrates with partially masked seed layer electroplating occurs only over the exposed portions of the seed layer, while the covered portions of the seed layer are protected from being plated upon. Electroplating on a substrate having a seed layer that is coated with patterned mask material (e.g., photoresist) is referred to as through mask plating and is typically used in WLP applications.

[0005] The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extentit is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.SUMMARY

[0006] Various examples herein relate to methods, apparatus, and systems for electroplating metal onto a semiconductor substrate. In one aspect of the disclosed examples, an electrodeposition apparatus is provided, the apparatus including: (a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate; (b) a substrate holder configured to hold the substrate and maintain separation between a plating face of the substrate and the anode during electroplating; and (c) an ionically-resistive ionically-permeable element including a substrate-facing surface and an opposing surface, where the ionically-resistive ionically-permeable element allows for flow of ionic current through the ionically-resistive ionically-permeable element towards the substrate during electroplating, and where the ionically-resistive ionically-permeable element and the substrate holder are configured to mate with one another and rotate together relative to the plating chamber.

[0007] In various examples, the ionically-resistive ionically-permeable element may include pins on its substrate-facing surface, the substrate holder may include holes, and the pins on the ionically-resistive ionically-permeable element may be configured to mate with the holes on the substrate holder. In some examples, the ionically-resistive ionically-permeable element may include holes on its substrate-facing surface, the substrate holder may include pins, and the pins on the substrate holder may be configured to mate with the holes on the ionically- resistive ionically-permeable element.

[0008] In various examples, rotating the substrate holder may cause the ionically-resistive ionically-permeable element to be rotated in sync with the substrate holder when the substrate holder and ionically-resistive ionically-permeable element are mated with one another.

[0009] In various examples, the apparatus may further include one or more bumpers positioned on the substrate holder and / or on the ionically-resistive ionically-permeable element, where the one or more bumpers may be configured to ensure that a target distance is provided between the substrate-facing surface of the ionically-resistive ionically-permeable element and the substrate holder when the ionically-resistive ionically-permeable element and substrate holder are mated with one another.

[0010] In various examples, the apparatus may further include an annular ly- shaped sealpositioned proximate a periphery of the ionically-resistive ionically -permeable element, either below the ionically-resistive ionically-permeable element or radially outside of the ionically- resistive ionically-permeable element, where the seal accommodates rotation of the ionically- resistive ionically-permeable element. In some such examples, the seal may accommodate simultaneously rotating the ionically-resistive ionically-permeable element and electroplating the metal onto the substrate. In these or other examples, the seal may include a spring coil.

[0011] In various examples, either (1) the substrate holder may include pins that are configured to mate with holes on the substrate-facing surface of the ionically-resistive ionically-permeable element, or (2) the substrate holder may include holes that are configured to mate with pins on the substrate-facing surface of the ionically-resistive ionically-permeable element. In some such examples, the pins and / or holes may be shaped to automatically align themselves with one another as they approach. In these or other examples, a geometry of the pins and holes may ensure that a target distance is provided between the substrate-facing surface of the ionically-resistive ionically-permeable element and the substrate holder when the ionically-resistive ionically-permeable element and the substrate holder are mated with one another. In these or other examples, a geometry of the pins and holes may ensure that the substrate holder is held within a target range of planarity when the ionically-resistive ionically- permeable element and the substrate holder are mated with one another. In these or other examples, one or more of the holes may be configured as a slit.

[0012] In various examples, the ionically-resistive ionically-permeable element may be configured as an assembly including an inner portion and an outer portion, the inner portion being circularly-shaped, the outer portion being annularly shaped. In some such cases, the inner portion of the ionically-resistive ionically-permeable element may be configured to rotate together with the substrate holder, and the outer portion of the ionically-resistive ionically- permeable element may be configured such that it does not rotate.

[0013] In various examples, the apparatus may further include catch tabs configured to prevent the ionically-resistive ionically-permeable element from floating upward during electroplating, where the catch tabs can be switched between at least two positions including ( 1 ) an insertion / removal position in which the ionically-resistive ionically-permeable element can be removed from the apparatus, and (2) an electroplating position in which the ionically- resistive ionically-permeable element cannot be removed from the apparatus.

[0014] In various examples, the ionically-resistive ionically-permeable element may be positioned within a ring that includes pins or tabs that extend radially inward, the ionically- resistive ionically-permeable element may include openings that align with the pins or tabs inthe ring, and the pins or tabs in the ring may ensure that the ionically-resistive ionically- permeable element remains at a target height during electroplating. In these or other examples, the ionically-resistive ionically-permeable element may further include indents, where the pins or tabs in the ring align with the openings in the ionically-resistive ionically-permeable element when the ionically-resistive ionically-permeable element and the ring are at a first relative rotational position, and where the pins or tabs in the ring align with the indents in the ionically- resistive ionically-permeable element when the ionically-resistive ionically-permeable element and the ring are at a second relative rotational position.

[0015] In various examples, the ionically-resistive ionically-permeable element may have a non-uniform thickness, the opposing surface of the ionically-resistive ionically-permeable element may be conically-shaped, and the ionically-resistive ionically-permeable element may be configured to float on the electrolyte above a membrane frame.

[0016] In various examples, the apparatus may further include a controller having at least one processor and a memory, where the at least one processor and the memory are communicatively connected with one another, and the memory stores computer-executable instructions for controlling the at least one processor to cause rotating the substrate holder and the ionically-resistive ionically-permeable element together during at least a portion of an electroplating process on a substrate. In these or other examples, the memory may store computer-executable instructions for controlling the at least one processor to cause rotating the substrate holder and the ionically-resistive ionically-permeable element together while current is being actively supplied to the substrate to cause electrodeposition of metal on the substrate.

[0017] In various examples, the ionically-resistive ionically-permeable element may include a pattern that provides a non-uniform profile of resistance through the ionically-resistive ionically-permeable element, and the pattern on the ionically-resistive ionically-permeable element may correspond to a pattern of features on the substrate being electroplated.

[0018] In another aspect of the disclosed examples, a method is provided, the method including: providing a substrate in a substrate holder of an electroplating apparatus, where the electroplating apparatus includes an ionically-resistive ionically-permeable element that can be positioned within about 10 mm of a plating face of the substrate; moving the substrate holder and / or the ionically-resistive ionically-permeable element toward one another such that the substrate holder and ionically-resistive ionically-permeable element mate and align with one another; rotating the substrate holder and the ionically-resistive ionically-permeable element together while the substrate holder and the ionically-resistive ionically-permeable element remain rotationally aligned with one another; and electroplating the metal onto the substrate.

[0019] These and other aspects are described further below with reference to the drawings.BRIEF DESCRIPTION OF THE DRAWINGS

[0020] FIG. 1 illustrates cross-sectional view of a portion of an electroplating apparatus having an ionically-resistive ionically-permeable element configured to rotate together with a substrate during at least a portion of an electroplating process, according to various examples.

[0021] FIG. 2 depicts a pin and hole that may be used to align and register a substrate holder and an ionically-resistive ionically-permeable element to one another, according to various examples.

[0022] FIGS. 3A-3C depict different views of a substrate holder and an ionically-resistive ionically-permeable element configured to rotate together during at least a portion of an electroplating process, according to various examples.

[0023] FIG. 4 shows an ionically-resistive ionically-permeable element including an inner portion and an outer portion, according to various examples.

[0024] FIGS. 5 A and 5B illustrate a substrate holder and an ionically-resistive ionically- permeable element, according to various examples.

[0025] FIGS. 6 A and 6B depict an ionically-resistive ionically-permeable element configured to mate with a keyed ring, according to various examples.

[0026] FIGS. 7A and 7B show an ionically-resistive ionically-permeable element configured to align with pins in a topside insert, according to various examples.

[0027] FIG. 8 shows a portion of a ring including a tab and an ionically-resistive ionically- permeable element including a slot configured to mate with the tab, according to various examples.

[0028] FIGS. 9A and 9B illustrate an ionically-resistive ionically-permeable element (FIG. 9A) having an indent and a topside insert having a tab configured to mate with the indent on the ionically-resistive ionically-permeable element.

[0029] FIG. 10 depicts a spring coil that may be present in various examples.

[0030] FIG. 11 depicts an electroplating apparatus having a floating ionically-resistive ionically-permeable element with a conically-shaped lower surface.

[0031] FIG. 12 shows an electroplating cell according to various examples.

[0032] FIG. 13 shows an electroplating apparatus configured to include a number of electroplating cells, according to various examples.DETAILED DESCRIPTION

[0033] In the following description, numerous specific details are set forth to provide a thorough understanding of the presented examples. The disclosed examples may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail to not unnecessarily obscure the disclosed examples. While the disclosed examples will be described in conjunction with the specific examples, it will be understood that it is not intended to limit the disclosed examples.

[0034] Methods and apparatus for electroplating a metal on a substrate with high level of control over plated thickness are provided. The methods can be used to improve plating uniformity on a die level for multiple dies on the processed substrate while providing a high degree of throughput. The methods are particularly useful for through mask plating in WLP applications, but are not limited to these applications. The methods and apparatus employ an ionically-resistive ionically-permeable element in close proximity to the substrate to address various plating uniformity challenges, such as within-die non-uniformity. The substrate is supported in a substrate holder during plating. The ionically-resistive ionically-permeable element and the substrate holder are aligned to one another and rotate together during at least a portion of the electroplating process. This alignment and simultaneous rotation of the ionically-resistive ionically-permeable element and the substrate holder allows for the ionically-resistive ionically-permeable element and substrate holder to remain rotationally aligned with one another, thereby eliminating several sources of tolerance stackup that could otherwise limit the electroplating process. As used herein, two elements are considered to be “rotationally aligned” when they are configured to rotate together while maintaining the relative spatial / rotational alignment between the two elements. For instance, if a first element and a second element are rotationally aligned with one another, rotating the first element will cause the second element to rotate by the same amount and in the same direction. Similarly, when an ionically-resistive ionically-permeable element and a substrate holder are rotationally aligned with one another, rotating the substrate holder will cause the ionically-resistive ionically-permeable element to rotate by the same amount and in the same direction.

[0035] Moreover, in various examples the ionically-resistive ionically-permeable element is tailored to include a pattern (e.g., a pattern of holes or other openings) that provides spatially non-uniform resistance through the ionically-resistive ionically-permeable element. This pattern can be used to combat plating uniformity challenges such as within-die non-uniformity, for example by providing relatively higher and lower levels of resistance to different portions of the substrate (e.g., different portions of a die), as desired to tailor the current distribution onthe substrate and promote uniform plating results. In these cases, the ionically-resistive ionically-permeable element may be tailored to match (e.g., correlate with) and to spatially align with a pattern of features on a specific substrate. In such examples, precise alignment between the pattern on the ionically-resistive ionically-permeable element and the corresponding pattern on the substrate is particularly advantageous.

[0036] Although the apparatus and techniques described herein are especially useful in the context of an electroplating apparatus having an ionically-resistive ionically-permeable element that is tailored to provide non-uniform resistance, the examples are not so limited. Various features described herein can be applied regardless of whether the ionically-resistive ionically-permeable element provides uniform or non-uniform resistance. As such, it should be understood that as described herein, a ionically-resistive ionically-permeable element may provide uniform or non-uniform resistance, unless otherwise specified. Moreover, any examples herein which utilize an ionically-resistive ionically-permeable element that provides non-uniform resistance may be modified by swapping or adding an ionically-resistive ionically-permeable element that provides uniform resistance, unless otherwise specified.

[0037] Where non-uniform resistance is desired, various techniques may be used. In one example, local resistance of the ionically-resistive ionically-permeable element is tailored by providing channels that vary in diameter along the length of the channels. In another example, local resistance of the ionically-resistive ionically-permeable element is tailored by providing channels that vary in diameter over the face of the ionically-resistive ionically-permeable element. In another example, local resistance of the ionically-resistive ionically-permeable element is tailored by providing channels in a non-uniform pattern of positions (e.g., with regions of higher and lower channel density). In another example, local resistance of the ionically-resistive ionically-permeable element is tailored by providing channels with a non- uniform angle of incline through the ionically-resistive ionically-permeable element. In another example, local resistance of the ionically-resistive ionically-permeable element is tailored by providing channels that are configured as helical holes. The helices can be shaped and / or positioned in a non-uniform manner to provide tailored amounts of resistance through the ionically-resistive ionically-permeable element. Any of these techniques may be used separately or together. Further, any of these techniques may be practiced in combination with one or more ionically-resistive ionically-permeable element that provides a uniform level of resistance, sometimes referred to as a uniform ionically-resistive ionically-permeable element. Such a uniform ionically-resistive ionically-permeable element may be positioned above and / or below the ionically-resistive ionically-permeable element tailored to provide non-uniform resistance. These elements may be in contact with one another, or there may be a measurable distance between them.

[0038] FIG. 1 illustrates an example of an electroplating apparatus. The electroplating apparatus includes an electroplating chamber configured to hold electrolyte. The electroplating chamber is separated into an anode chamber 190 and a cathode chamber 191 by a membrane positioned in membrane frame 113. An anode 199 is positioned in the anode chamber 190. A substrate holder 103 and an ionically-resistive ionically-permeable element 105 are positioned in the cathode chamber 191 , and these elements 103 and 105 are configured to rotate together during at least a portion of the electroplating process while the substrate 101 is positioned in the substrate holder 103.

[0039] The ionically-resistive ionically-permeable element 105 includes several surfaces including a substrate-facing surface 193 (sometimes referred to as a top surface or upper surface) and an opposing surface 194 (sometimes referred to as a bottom surface, lower surface, or anode-facing surface). While such surfaces are not necessarily labeled in the remaining figures, it is understood that the ionically-resistive ionically-permeable elements herein typically have such surfaces, and that such surfaces may be modified by any one or more of the elements described herein for alignment or other purposes.

[0040] During electroplating, electrolyte is routed through the apparatus in a number of ways. For instance, some electrolyte in the cathode chamber 191 passes from below the ionically- resistive ionically-permeable element 105, through holes or other openings (not shown in FIG. 1) in the ionically-resistive ionically-permeable element 105, into the region above the ionically-resistive ionically-permeable element 105 and below the substrate 101 (often referred to as the crossflow region 129). An annular seal 111 is provided proximate the ionically- resistive ionically-permeable element 105. In FIG. 1, this seal 111 is shown below the ionically-resistive ionically-permeable element 105 and above membrane frame 113. In other examples, this seal may be positioned in a different place, for example radially outside of the ionically-resistive ionically-permeable element, or a portion thereof. In some cases, the seal is positioned between an inner portion (e.g., an inner circular portion) of the ionically-resistive ionically-permeable element and an outer portion (e.g., an outer annular portion) of the ionically-resistive ionically-permeable element, where the inner portion of the ionically- resistive ionically-permeable element rotates during at least a portion of electroplating and the outer portion of the ionically-resistive ionically-permeable element remains stationary. In some cases, multiple seals are used. In some cases, one or more dynamic seal is used. Various types of seals are contemplated, as discussed further below.

[0041] Generally speaking, the substrate holder 103 may be aligned to the ionically-resistive ionically-permeable element 105 in a number of ways. For instance, the substrate holder 103 and the ionically-resistive ionically-permeable element 105 are aligned / positioned with respect to X-Y concentricity, clocking, Z-gap, and Z-planarity, as shown in FIG. 1. X-Y concentricity refers to the alignment in the X-Y plane, as viewed from above the face of the substrate 101. Clocking refers to the rotational alignment between the ionically-resistive ionically-permeable element 105 and the substrate 101 or substrate holder 103. Z-gap refers to the distance between the ionically-resistive ionically-permeable element 105 and the substrate 101 or substrate holder 103. This distance should be carefully controlled to promote desired hydrodynamic conditions during electroplating. In various cases, the Z-gap may be controlled to provide a target level of plating uniformity, which may be particularly advantageous when the ionically- resistive ionically-permeable element 105 includes a tailored hole pattern. In some such cases, the hole pattern may be tailored to provide a desired level of plating uniformity when plating at a particular Z-gap. Z-planarity refers to the uniformity of the height of the gap formed between the ionically-resistive ionically-permeable element 105 and the substrate 101 during electroplating. This height should similarly be kept uniform during plating to promote desired hydrodynamic conditions.

[0042] In order to control the relative positioning between the ionically-resistive ionically- permeable element 105 and the substrate holder 103, a series of alignment elements is provided. These elements ensure that the substrate holder 103 and the substrate 101 thereon are precisely aligned with the ionically-resistive ionically-permeable element 105. In cases where the ionically-resistive ionically-permeable element 105 is tailored to provide a pattern of non- uniform resistance, this alignment may be particularly useful, ensuring that the pattern on the ionically-resistive ionically-permeable element is aligned with the corresponding pattern on the substrate during plating. In this example, the alignment elements include pins 107 positioned on an upward-facing surface of the ionically-resistive ionically-permeable element 105 and holes 109 positioned on downward-facing surface the substrate holder 103. The pins 107 are configured to mate with the holes 109 when the substrate holder 103 is lowered into position for plating. The pins 107 and holes 109 may be swapped such that the pins 107 are located on the downward-facing surface of the substrate holder 103 and the holes 109 are located on the upward-facing surface of the ionically-resistive ionically-permeable element 105. It should be understood that any holes on an ionically-resistive ionically-permeable element that are used for alignment similar to FIG. 1 are distinguishable from holes in the ionically-resistive ionically-permeable element that are provided for electrolyte flow.Generally, no electrolyte flows through the holes used for alignment. In many cases, the holes used for alignment do not pass through the entire thickness of the ionically-resistive ionically- permeable element.

[0043] The pins 107 and holes 109 provide alignment between the ionically-resistive ionically-permeable element 105 and the substrate holder 103 with respect to at least the X-Y concentricity and clocking. In some examples, the pins 107 and holes 109 also provide alignment with respect to the Z-gap and Z-planarity. For instance, where the pins 107 on the ionically-resistive ionically-permeable element 105 contact the top of the holes 109 in the substrate holder 103, the length of the pins 107 and depth of the holes 109 sets the distance of the Z-gap (and related Z-planarity) between the ionically-resistive ionically-permeable element 105 and the substrate holder 103. This is similarly true where the pins and holes are swapped and the pins on the substrate holder 103 contact the bottom of the holes in the ionically-resistive ionically-permeable element 105 (not shown in FIG. 1).

[0044] The pins 107 and / or holes 109 may be formed integrally with the ionically-resistive ionically-permeable element 105 and / or with the substrate holder 103. In some examples, the pins 107 and / or holes 109 may be formed as distinct parts that are attached to the ionically- resistive ionically-permeable element 105 and / or to the substrate holder 103. In some cases, the hole 109 may be formed integrally with the ionically-resistive ionically-permeable element 105 or with the substrate holder 103, but an additional hole liner may be provided and attached to the hole 109. It may be particularly advantageous to provide the pins / holes / hole liner elements separately, such that they can be made from materials (e.g., metal, plastic, ceramic, glass, etc.) that withstand repeated contact / alignment, without regard to the material of the ionically-resistive ionically-permeable element 105 and / or to the material of the substrate holder 103.

[0045] In some examples, one or more of the holes 109 may be configured as a slot (e.g., a linear aperture having a length substantially greater than its width) or other non-circular shape. The pins 107 may be configured to provide a degree of automatic alignment. For instance, the pins 107 may be shaped to include one or more curved surface that acts to automatically align the pin 107 with the corresponding hole 109 as these elements are brought into proximity. This auto-alignment is further discussed with reference to FIG. 2.

[0046] FIG. 2 depicts an example of a pin 207 on an ionically-resistive ionically-permeable element 205, where the pin mates with a hole 209 formed in a substrate holder 203. In this example, the pin 207 includes a curved surface that interfaces with the hole 209. Further, the hole 209 includes a surface that is chamfered, curved, or otherwise sloped. The curved surfaceof the pin 207 mates with the sloped surface of the hole 209 as the substrate holder 203 is brought into position with respect to the ionically -resistive ionically-permeable element 205. As a result of these curved / sloped surfaces, the pin 207 is automatically aligned with the hole 209 as these elements approach one another. FIG. 2 shows the pin 207 and hole 209 coming into contact, while they are slightly mis-aligned. As the pin 207 contacts the sloped surface of the hole 209, the substrate holder 203 shifts (e.g., rotating slightly leftward in FIG. 1) with respect to the ionically-resistive ionically-permeable element 205 such that the pin 207 comes into alignment with the hole 209. The position of the pins 207 and holes 209 may be reversed in various examples.

[0047] Alternatively or in addition to the pins and holes, other techniques may also be used to align the ionically-resistive ionically-permeable element and the substrate holder. For instance, one or more bumpers may be used to control the Z-gap and Z-planarity. The bumpers may be located on the ionically-resistive ionically-permeable element and / or on the substrate holder. The bumpers are similar to the pins described in FIG. 1, but do not mate with any corresponding hole. Instead, the bumpers sit against an opposing surface to set the Z-gap between the ionically-resistive ionically-permeable element and the substrate holder. For instance, a bumper positioned on the ionically-resistive ionically-permeable element may contact an opposing surface on the substrate holder. In another example, a bumper positioned on the substrate holder may contact an opposing surface on the ionically-resistive ionically- permeable element. The bumper may be made of any material described above with respect to the pins. The bumpers may or may not be adjustable, for example to allow flexibility in the desired Z-gap. For example in one example, one set of bumpers can be replaced with another set of taller bumpers, to set a larger Z-gap. In another example, the bumpers could contain actuators to lengthen or shorten their size dynamically, in between wafers or even during the plating process of one wafer.

[0048] The number of pins, holes, bumpers, or other alignment elements may be selected as desired for a particular application. In various examples, it is advantageous to include at least three or four points of alignment, which may act to define the plane in which the substrate rotates during electroplating. While only three points are needed to define the plane, it may be beneficial to define four alignment points, for example to compensate for any bowing in the substrate / substrate holder. This is particularly useful where adjustable bumpers are used, such that the bumpers can be adjusted to touch their opposing surfaces (e.g., the opposing surfaces being on the bottom of the substrate holder or the top of the ionically-resistive ionically- permeable element) at the same time. In some examples, the alignment elements include atleast two pins, each of which is configured to mate with a hole, slot, or other depression, and at least one bumper. In some examples, the alignment elements include at least two pins, each of which is configured to mate with a hole, slot, or other depression, and at least two bumpers, one or both of which is adjustable.

[0049] FIGS. 3A-3C together illustrate portions of an electroplating apparatus where the substrate holder 303 and the ionically-resistive ionically-permeable element 305 are configured to rotate together during at least a portion of the electroplating process. FIG. 3 A shows the bottom surface of the substrate holder 303, FIG. 3B shows a side view of the substrate holder 303 engaged with the ionically-resistive ionically-permeable element 305, and FIG. 3C shows a top surface of the ionically-resistive ionically-permeable element 305.

[0050] In this example, the bottom surface of the substrate holder 303 includes a series of four alignment elements including two pins 307a / 307b, and two bumpers 321a / 321b. The two pins 307a / 307b are positioned on the substrate holder 303 at azimuthally opposed locations. Similarly, the two bumpers 321a / 321b are positioned on the substrate holder 303 at azimuthally opposed locations. The top surface of the ionically-resistive ionically-permeable element 305 includes a series of two alignment elements including hole 309a and slot 309b. The hole 309a and the slot 309b are positioned on the ionically-resistive ionically-permeable element 305, proximate the perimeter of the ionically-resistive ionically-permeable element 305, at azimuthally opposed locations that correspond to the locations of the pins 307a / 307b. The slot 309b has a length that is substantially oriented along the radius of the ionically-resistive ionically-permeable element 305.

[0051] When the substrate holder 303 is brought into proximity with the ionically-resistive ionically-permeable element 305, the pins 307a / 307b on the substrate holder 303 align and mate with the hole 309a and slot 309b in the ionically-resistive ionically-permeable element 305. In addition, the bumpers 321a / 321b on the substrate holder 303 contact the ionically- resistive ionically-permeable element 305 in a peripheral region. As noted above with regard to FIG. 2, the pins 307a / 307b and the holes 309a / 309b may be configured to automatically align with one another as these elements approach and come into contact. Specifically, the pins 309a / 309b align the substrate holder 303 (and the substrate thereon) with the ionically- resistive ionically-permeable element 305 at least with respect to X-Y concentricity and clocking. In examples where the pins 309a / 309b contact an opposing surface (e.g., the bottom of the hole 309a and / or slot 309b) of the ionically-resistive ionically-permeable element 305, the pins 309a / 309b also help to align the substrate holder 303 with the ionically-resistive ionically-permeable element 305 with respect to the Z-gap and Z-planarity. The bumpers321a / 321b similarly act to provide alignment between the substrate holder 303 and the ionically-resistive ionically-permeable element 305 with respect to the Z-gap and Z-planarity.

[0052] In some examples, the ionically-resistive ionically-permeable element may be implemented as an assembly including an inner portion that is circular and an outer portion that is annular. One such example is shown in FIG. 4, with outer portion 425 surrounding inner portion 424. The outer portion 425 may be configured to remain static within the electroplating apparatus during plating, while the inner portion 424 may be configured to rotate during at least a portion of the electroplating process. Any alignment elements described herein may be positioned on a peripheral region of the inner portion 424 of the ionically-resistive ionically- permeable element. In this way, the inner portion 424 of the ionically-resistive ionically- permeable element can remain aligned with the substrate and substrate holder as the ionically- resistive ionically-permeable element and substrate holder are rotated.

[0053] Advantageously, the inner portion 424 of the ionically-resistive ionically-permeable element can include a pattern of holes 426, and this pattern of holes 426 can be tailored to a specific substrate. Such tailoring may include providing a desired level of resistance at desired locations, for example by controlling the geometry and layout of the holes 426 (or other openings). This non-uniform resistance may be used to overcome within-die plating nonuniformities that would otherwise arise as a result of the non-uniform structure / layout within the dies. For instance, a die may include a first region where features are relatively dense and a second region where features are relatively isolated. A uniform current distribution provided to the substrate would plate the first and second regions at different rates. By controlling the resistance through the ionically-resistive ionically-permeable element, the current distribution to the substrate can be tailored more carefully to promote a uniform plating rate in both the first and second regions of the die. This tailoring is specific to the layout of the substrate being processed (and in many cases, the layout of the dies on the substrate). As such, different ionically-resistive ionically-permeable elements (or inner portions 424 thereof) can be designed for substrates having different layouts.

[0054] Providing the ionically-resistive ionically-permeable element as an assembly that includes an inner portion 424 and an outer portion 425 allows for the inner portion 424 to be quickly and easily swapped between processing different substrates. The outer portion 425 of the ionically-resistive ionically-permeable element may act as a frame into which the inner portion 424 is positioned. Different inner portions 424 can be swapped in for processing substrates of different layouts. While in some examples the inner portion 424 and outer portion 425 form an assembly, these elements may also be provided and / or used independently of oneanother.

[0055] Although not shown in FIG. 4, it is understood that the outer portion 425 of the ionically-resistive ionically-permeable element may include additional features. For instance, an opening (or series of openings) may be provided in the outer portion 425 to act as a crossflow inlet showerhead to provide electrolyte to the crossflow region above the ionically-resistive ionically-permeable element and below the substrate. Similarly, an opening (or series of openings) may be provided in the outer portion 425 to act as a cross flow conduit outlet to receive and remove electrolyte from the crossflow region above the ionically-resistive ionically-permeable element and below the substrate.

[0056] Another optional feature that may be present is an element for maintaining the inner portion 424 and outer portion 425 of the ionically-resistive ionically-permeable element in alignment with one another with respect to the Z-direction (defined orthogonal to the face of inner portion 424 of the ionically-resistive ionically-permeable element when the inner portion 424 is installed in the outer portion 425). Such elements may be particularly useful for overcoming buoyancy and “lift” effects that arise from fluidics. These alignment elements may similarly be used in examples where the ionically-resistive ionically-permeable element is configured as a single plate, rather than an assembly. In such cases, the alignment elements may act to maintain the ionically-resistive ionically-permeable element aligned in the Z- direction with another piece of hardware positioned peripherally outside of the ionically- resistive ionically-permeable element. Such alignment elements are described further below and include, but are not limited to, rotating catch tabs, embedded magnets, keyed insertion / removal points, and the inclusion of dense materials. Although such alignment elements may be described in the context of examples where the ionically-resistive ionically- permeable element is a single piece, it is understood that such mechanisms can be similarly applied to maintain Z-direction alignment between the inner and outer portions of an ionically- resistive ionically-permeable element assembly.

[0057] FIGS. 5 A and 5B illustrate a portion of an electroplating apparatus in an example where the ionically-resistive ionically-permeable element 505 and substrate holder 503 are configured to rotate together during at least a portion of the electroplating process. FIG. 5 A shows the various elements separately, while FIG. 5B shows them seated together. In this example, the ionically-resistive ionically-permeable element 505 includes inner portion 524 and outer portion 525 (sometimes referred to as a ring). The outer portion 525 includes a lip 526 that supports the inner portion 524 at its periphery. A seal 527 is provided on the upper surface of the lip 526 (or alternatively, at the periphery of the bottom surface of the innerportion 524). Example seal materials include, but are not limited to, solid viton rubber, compressible foam viton rubber, polytetrafluoroethylene (PTFE), and non-PFAS materials. The outer portion 525 also includes a catch tab 528 that can be rotated inward to hold the inner portion 524 in the outer portion 525 after assembly (e.g., as shown in FIG. 5B). The inner portion 524 includes a series of holes 509. The substrate holder 503 supports substrate 501 at its periphery and includes a series of pins 507 that register and engage with the holes 509 in the inner portion 524 of the ionically-resistive ionically-permeable element 505.

[0058] As shown in FIG. 5B, when the inner portion 524 is seated in the outer portion 525, the pins 507 in the substrate holder 503 are seated within the holes 509 in the ionically-resistive ionically-permeable element 505. At this point, the catch tabs 528 can be rotated inward to trap the inner portion 524 in the outer portion 525 and prevent it from moving upward. During at least a portion of the electroplating process, the substrate holder 503 is rotated relative to the outer portion 525. Because the pins 507 of the substrate holder 503 are seated within and engage the holes 509 of the inner portion 524, the inner portion 524 of the ionically-resistive ionically-permeable element 505 rotates with the substrate holder 503 relative to the outer portion 525. The seal 527 is engaged when the inner portion 524 is seated in the outer portion 525.

[0059] Also shown in FIG. 5B is the crossflow region 529 formed between the inner portion 524 of the ionically-resistive ionically-permeable element and the substrate 501. During electroplating, electrolyte flows through the apparatus in a number of ways. For instance, electrolyte travels upward through holes or other openings (not shown) in the inner portion 524 of the ionically-resistive ionically-permeable element toward the substrate 501. Such holes or other openings may be provided in a pattern that provides specific degrees of electrolyte flow and related resistance in specific regions, as described in relation to FIG. 4, for example. In addition, crossflowing electrolyte is introduced at one side of the crossflow region 529 (e.g., at a crossflow inlet), and removed from the crossflow region 529 at an azimuthally opposed location (e.g., at a crossflow outlet). These two types of electrolyte flow combine to produce high quality plating results on the substrate 501. While such a crossflow region is not specifically labeled in other figures, it is understood that this region is present between the ionically-resistive ionically-permeable element (e.g., an inner portion thereof, if present) and the substrate when the substrate is placed in the substrate holder and positioned for plating.

[0060] In FIGS. 5A and 5B, catch tabs 528 are used to ensure that the inner portion 524 of the ionically-resistive ionically-permeable element 505 is maintained at a desired relative height / Z-position with respect to the outer portion 525 of the ionically-resistive ionically-permeable element 505. The catch tabs 528 should be arranged such that they can achieve two positions: (1) an insertion / removal position (shown in FIG. 5A), and (2) a plating position (shown in FIG. 5B). In the insertion / removal position, the catch tabs 528 are rotated outward such that the inner portion 524 of the ionically-resistive ionically-permeable element can be lowered onto the lip 526 of the outer portion 525. In the plating position, the catch tabs 528 are rotated inward (e.g., such that at least a portion of the catch tabs 528 are located above and radially inward from the edge of the inner portion 524) to trap the inner portion 524 under the catch tab 528.

[0061] In another example where the ionically-resistive ionically-permeable element is configured as a single unitary plate, similar catch tabs may be provided on another portion of the apparatus to maintain the ionically-resistive ionically-permeable element in its desired Z- position during plating. The catch tabs can be positioned such that they can achieve both an insertion / removal position and a plating position, as described in relation to FIGS. 5A and 5B. The catch tabs, for instance, can be included on a portion of the apparatus that is positioned slightly higher and radially outside of the ionically-resistive ionically-permeable element. When placed in the plating position, the catch tabs include a portion that is positioned above and radially inside or inwardly of the edge of the ionically-resistive ionically-permeable element. This portion of the catch tabs keeps the ionically-resistive ionically-permeable element in place (e.g., in the Z-direction) during electroplating. In a particular example, the catch tab may be part of, or connected to, an annularly shaped topside insert that is positioned under the substrate holder. Generally, as used herein, a topside insert remains stationary within the plating cell during electroplating, unless otherwise noted herein.

[0062] Another technique that may be used to control the Z-direction position of an ionically- resistive ionically-permeable element (or an inner portion thereof) is to embed magnets in the ionically-resistive ionically-permeable element. For instance, magnets embedded in a membrane frame (e.g., similar to the membrane frame 113 shown in FIG. 1) would attract magnets embedded in the ionically-resistive ionically-permeable element (or an inner portion thereof) during periods that the substrate holder is not engaged, to prevent buoyancy or lift forces from moving the ionically-resistive ionically-permeable element out of position.

[0063] Another technique that may be used to control the Z-direction position of an ionically- resistive ionically-permeable element is to tailor the density of the ionically-resistive ionically- permeable element (or inner portion thereof). Such elements are often made of relatively light (e.g., non-dense) materials such as most plastics such as polypropylene orPTFE. However, the ionically-resistive ionically-permeable element can be made denser by using or includingalternate materials. In one example, the ionically -resistive ionically -permeable element (or an inner portion thereof) includes a dense material such as metal, glass, ceramic, or high density plastic such as polycarbonate. The dense material may be positioned proximate the periphery of the ionically-resistive ionically-permeable element (or inner portion thereof). In some cases, the dense material may be provided in a ring embedded in or attached to the ionically-resistive ionically-permeable element (or an inner portion thereof). The dense material may be denser than the electrolyte used to plate the substrate. Such electrolyte is often between about 5% and about 25% denser than water.

[0064] Another technique that may be used to control the Z-direction position of an ionically- resistive ionically-permeable element (or inner portion thereof) and to allow for quick swapping of the ionically-resistive ionically-permeable element (or inner portion thereof) for substrates of different layouts involves providing a keyed ring in combination with an ionically- resistive ionically-permeable element with openings at keyed locations. Such an example is shown in FIGS. 6A and 6B. FIG. 6A shows a cross-sectional view of an ionically-resistive ionically-permeable element 605 installed in a keyed ring 631. FIG. 6B shows a bottom view of this same example. In this example, the ionically-resistive ionically-permeable element 605 includes an annular recess or slot 640 positioned along its outer edge 650, as shown in FIG. 6A. The ionically-resistive ionically-permeable element 605 also includes openings 639 spaced circumferentially along its outer edge 650 and bottom surface 651. The openings 639 do not extend all the way through the thickness of the ionically-resistive ionically-permeable element 605 (e.g., into the page of FIG. 6B). Instead, the openings 639 extend and provide a pathway to the annular slot 640.

[0065] The keyed ring 631 includes a series of pins 637 extending radially inwardly and arranged circumferentially along an inner edge 652 of the keyed ring 631. The pins 637 can be spaced circumferentially to align with the openings 639 in the ionically-resistive ionically- permeable element 605. When the pins 637 of the keyed ring 631 are aligned with the openings 639 in the bottom surface 651 of the ionically-resistive ionically-permeable element 605, as shown in FIG. 6B, the ionically-resistive ionically-permeable element 605 is considered to be in the insertion / removal position. In this position, the ionically-resistive ionically-permeable element 605 can be inserted or removed from the keyed ring 631. After the ionically-resistive ionically-permeable element 605 is inserted into the keyed ring 631, it can be rotated with respect to the keyed ring 631 such that the openings 639 in the ionically-resistive ionically- permeable element 605 are no longer aligned with the pins 637 of the keyed ring 631. After this rotation, the pins 637 of the keyed ring 631 are seated within the annular slot 640 of theionically-resistive ionically-permeable element 605, and the ionically-resistive ionically - permeable element 605 is considered to be in the plating position (or one of several plating positions, as discussed further below).

[0066] In some examples, the ionically-resistive ionically-permeable element 605 may be implemented to include multiple portions (e.g., an inner portion and outer portion) as described above in relation to FIG. 4. In some such examples, the ionically-resistive ionically-permeable element 605 may be an inner portion of the ionically-resistive ionically-permeable element, and the keyed ring 631 may be an outer portion of the ionically-resistive ionically-permeable element.

[0067] While not explicitly shown in FIGS. 6A and 6B, in various examples, the ionically- resistive ionically-permeable element 605 (or an inner portion thereof) may include one or more series of indents proximate its periphery, within the annular slot 640. Such indents may be similar to those described in relation to FIG. 9A, but positioned along an upper surface 653 of the annular slot 640, for instance. Each series of indents aligns with the pins 637 of the keyed ring 631 while the ionically-resistive ionically-permeable element 605 is in a particular position with respect to the keyed ring 631. For instance, a first series of indents may align with the pins 637 when the ionically-resistive ionically-permeable element 605 and the keyed ring 631 are in a first relative position, a second series of indents may align with the pins 637 when the ionically-resistive ionically-permeable element 605 and the keyed ring 631 are in a second relative position, etc. Generally, any number of sets of indents may be used to achieve any number of relative positions to attain desired plating conditions. In some examples, the relative positions used for electroplating are separated from one another by a particular degree, such as about 30°, about 60°, about 90°, about 120°, about 180°, or by a degree that falls within a range defined by any two of these values. In one example, in a first relative plating position the ionically-resistive ionically-permeable element is at a first position relative to the keyed ring, and in a second relative plating position the ionically-resistive ionically-permeable element is rotated by 180° such that the ionically-resistive ionically-permeable element is at a second position relative to the keyed ring. The use of multiple plating positions may counteract and smooth-out plating effects that could otherwise arise as a result of the direction of crossflow through the electroplating apparatus. Generally speaking, such examples are particularly useful in examples where the electroplating process includes at least one portion where the substrate is actively electroplated while the ionically-resistive ionically-permeable element remains stationary. In many such examples, the substrate is actively electroplated while the ionically- resistive ionically-permeable element remains stationary in a first relative plating positionrelative to the keyed ring, and while the ionically-resistive ionically-permeable element remains stationary in a second relative plating position relative to the keyed ring. Electroplating may or may not be actively taking place when the ionically-resistive ionically- permeable element is switched from the first relative plating position to the second relative plating position.

[0068] FIGS. 7A and 7B depict another example where an ionically-resistive ionically- permeable element is configured to include indentations (also referred to as indents, recesses, or notches) to define a desired plating position. FIG. 7A shows a cross sectional view, while FIG. 7B shows a top-down view. In this example, the ionically-resistive ionically-permeable element 705 is positioned radially inside of ring 750. Ring 750 may be a membrane frame, a piece of hardware that connects to the membrane frame, or another portion of the plating apparatus. In some examples, the ionically-resistive ionically-permeable element 705 may be implemented to include multiple portions (e.g., an inner portion and outer portion) as described above in relation to FIG. 4. In some such examples, the ionically-resistive ionically-permeable element 705 may be an inner portion of the ionically-resistive ionically-permeable element, and the ring 750 may be an outer portion of the ionically-resistive ionically-permeable element.

[0069] The ionically-resistive ionically-permeable element 705 includes a series of alignment elements including four installation slots 739 and four indents 751. Any number of alignment elements may be used, though it is advantageous to include at least three alignment elements to adequately constrain the ionically-resistive ionically-permeable element 705 and the ring 750 with respect to one another for each desired relative position. In the example of FIGS. 7A and 7B, four alignment elements (e.g., either the four installation slots 739 or the four indents 751) are used for each relative position. The installation slots 739 and indents 751 are configured to align with pins 737 positioned under a topside insert 760, as discussed further below. The topside insert 760 is annularly shaped and positioned above the ring 750. The topside insert 760 may also be positioned at least partially below and at least partially radially outside of the substrate holder (not shown). The pins 737 may be attached to or integral with the topside insert 760, or they may be attached to or integral with the ring 750. In other cases, the pins 737 may be attached to or integral with another piece of hardware provided in this region.

[0070] When the pins 737 are aligned with the installation slots 739, the ionically-resistive ionically-permeable element 705 is considered to be in an installation / removal position. In this position, the ionically-resistive ionically-permeable element 705 can be easily arranged in the electroplating cell, with the pins 737 passing through the installation slots 739 as the ionically-resistive ionically -permeable element 705 is lowered into position. Then, the ionically- resistive ionically-permeable element 705 can be rotated such that the pins 737 become aligned with the indents 751, as shown in FIGS. 7A and 7B. At this point the ionically-resistive ionically-permeable element 705 is considered to be in a plating position. Here, the pins 737 engage with the indents 751 to effectively lock the ionically-resistive ionically-permeable element 705 into position relative to the ring 750. This locking in of position can be controlled based on one or more forces applied to the ionically-resistive ionically-permeable element 705 at appropriate times. In some cases, such a force is only applied between processing subsequent substrates, for example to provide a particular ionically-resistive ionically-permeable element for processing a substrate of a particular design. In some other cases, such a force may be applied while processing a substrate, for example when it is desired to change the relative plating position of the substrate (and substrate holder and ionically-resistive ionically- permeable element) with respect to a direction of crossflow within the electroplating cell. As noted above, current may or may not be supplied while the substrate / substrate holder / ionically- resistive ionically-permeable element are changing position relative to the remaining portions of the electroplating cell.

[0071] While FIGS. 6A, 6B, 7A, and 7B depict an example where pins are used, other types of alignment elements may also be used alternatively or in addition to the pins. For instance, other types of alignment elements may include tabs, nubs, ribs, teeth, etc.

[0072] FIG. 8 illustrates a close-up view of a portion of a ring 850 configured to mate with an ionically-resistive ionically-permeable element 805. The ring 850 may be implemented as a keyed ring similar to keyed ring 631 of FIGS. 6A and 6B. The ring 850 may also be implemented as a ring similar to the ring 750 of FIGS. 7A and 7B. The ring 850 may also be implemented as an outer portion of an ionically-resistive ionically-permeable element assembly, similar to outer portion 425 of FIG. 4 (in this example, the ionically-resistive ionically-permeable element 805 is an inner portion of the ionically-resistive ionically- permeable element, similar to inner portion 424 of FIG. 4). The ring 850 may also be implemented as a topside insert.

[0073] In the example of FIG. 8, the ionically-resistive ionically-permeable element 805 includes a series of installation recesses or slots 839 that are configured to align and register with tabs 837 on the ring 850. The installation slots 839 may be analogous to the installation slots 739 of FIGS. 7A and 7B. The tabs 837 may be analogous to the pins 737 of FIGS. 7A and 7B.

[0074] FIGS. 9A and 9B depict another example where an ionically-resistive ionically-permeable element 905 includes indents 951 (which may also be referred to as recesses, indentations, notches, etc.) configured to define one or more desired plating position. FIG. 9A shows indent 951 on a top surface 970 of the ionically-resistive ionically-permeable element 905. FIG. 9B shows a perspective view, illustrating the bottom 972 and inner edge 971 of a ring or topside insert 960. The topside insert 960 may be analogous to ring 850 of FIG. 8, and / or to topside insert 760 of FIGS. 7 A and 7B, and / or to keyed ring 631 of FIGS. 6A and 6B, and / or to the outer portion 525 of the ionically-resistive ionically-permeable element 505 of FIGS. 5A and 5B, and / or to the outer portion 425 of the ionically-resistive ionically- permeable element 405 of FIG. 4. The inner edge 971 of the topside insert 960 includes a tab 937 that can extend toward a center of the topside insert 960. The tab 937 on the topside insert 960 includes a downward-facing projection or nub 937a that is configured to align and mate with the indent 951 in the ionically-resistive ionically-permeable element 905. Although not shown in FIGS. 9 A and 9B, the ionically-resistive ionically-permeable element 905 may further include slots analogous to installation slots 839 of FIG. 8. The installation slots may extend through the entire thickness of the ionically-resistive ionically-permeable element 905, while the indents 951 may extend only through a portion of the ionically-resistive ionically- permeable element 905. In this way, the tabs 937 can be aligned with the installation slots when the ionically-resistive ionically-permeable element 905 is in an installation / removal position. To place the ionically-resistive ionically-permeable element 905 in a desired plating position, it can then be rotated relative to the topside insert 960 such that the indents 951 align with the nubs 937a on the tabs 937 of the topside insert 960. After reaching this position, the nubs 937a are seated within the indents 951, temporarily locking the ionically-resistive ionically-permeable element 905 into position with respect to the topside insert 960.

[0075] In the examples herein, the ionically-resistive ionically-permeable element is mobile such that it can be rotated or otherwise moved with respect to the remaining portions of the electroplating chamber (e.g., the chamber walls, the crossflow inlet, and crossflow outlet). The ionically-resistive ionically-permeable element is typically moved simultaneously with the substrate holder such that these elements can remain aligned during such movement. Maintaining this alignment is particularly advantageous in examples where the ionically- resistive ionically-permeable element is configured to include a pattern that provides varied levels of local resistance. This varied local resistance may be used to promote uniform plating rates at different portions of a substrate (e.g., within different portions of a die on a substrate), to thereby overcome otherwise non-uniform plating rates that often arise as a result of non- uniform feature layout within the dies on the substrate.

[0076] This mobility of the ionically-resistive ionically -permeable element introduces certain additional challenges. For instance, it may be desirable to minimize or prevent leakage of electrolyte and related ionic current at an outer edge of the ionically-resistive ionically- permeable element (or an inner portion thereof in examples where the ionically-resistive ionically-permeable element is implemented as an assembly including an inner portion and an outer portion). In various examples, one or more seal may be provided to achieve this purpose. Such a seal may be annularly shaped, and may be located proximate the ionically-resistive ionically-permeable element, for example peripherally outside of the ionically-resistive ionically-permeable element (or inner portion thereof), or below a peripheral region of the ionically-resistive ionically-permeable element (or inner portion thereof).

[0077] In various examples, more than one seal may be provided. In some such examples, two or more seals are positioned such that they are vertically aligned with one another (e.g., a first seal being positioned above at least a portion of a second seal). In some other examples, two or more seals are positioned such that they are horizontally aligned with one another (e.g., a first seal being positioned peripherally outside of at least a portion of a second seal). Where multiple seals are used, they may be the same material and / or design, or they may be different materials and / or different designs.

[0078] Example seal materials are mentioned above. The material used for the seal may affect whether the substrate can be rotated while current is being supplied to the substrate and electroplating is actively taking place. For instance, some seal materials, including but not limited to PTFE, may allow for the substrate / substrate holder / ionically-resistive ionically- permeable element to be actively rotated together while current is supplied to the substrate and metal is plated onto the substrate. Other seal materials or designs may not be able to withstand this type of movement. In some such examples, substrate holder and the ionically-resistive ionically-permeable element only move relative to one another while they are in an unsealed position (e.g., while the seal is not engaged). In some cases, the seal is positioned below a peripheral region of the ionically-resistive ionically-permeable element (or an inner portion thereof when the ionically-resistive ionically-permeable element is implemented as an assembly), and can be engaged by applying a force (e.g., a vertical force) to press the substrate holder down toward the ionically-resistive ionically-permeable element (alternatively or in addition, a force that presses the ionically-resistive ionically-permeable element upward toward the substrate holder can also be used). The seal can be disengaged by removing this force. In some examples, such a seal may be implemented as a spring coil, which may be provided in an annular j acket / slot.

[0079] An example of a spring coil 1070 positioned in a jacket 1071 is shown in FIG. 10. Other types of springs may also be used. The spring coil 1070 acts to push the ionically - resistive ionically-permeable element (not shown) upward against the substrate holder (not shown). The spring coil 1070 may be made of titanium, stainless steel, or other metals that are chemically compatible with the specific electroplating bath, while the jacket 1071 may be made of fluorinated ethylene propylene (FEP), PTFE, or other low friction material that is compatible with the specific electroplating bath. In some examples, a spring coil may be implemented along with one or more additional seal. Tn a particular example, a spring coil is implemented together with an o-ring, where the o-ring is positioned peripherally around the spring coil.

[0080] FIG. 11 presents an example where an ionically-resistive ionically-permeable element 1105 is configured to float within the electroplating cell. In this example, the ionically- resistive ionically-permeable element 1105 is shaped to include a lower surface that is contoured to the shape of a membrane frame 1180. The membrane frame 1180 supports a membrane that separates the plating cell into a catholyte region above the membrane and an anolyte region below the membrane. Like all other examples herein, the ionically-resistive ionically-permeable element 1105 may be configured to provide a tailored profile of local resistance across the face of the ionically-resistive ionically-permeable element, for example to promote uniform plating rates at different regions of the substrate and the within different regions of the dies thereon. Such varied local resistance can be achieved in a number of ways described above.

[0081] In the example of FIG. 11, the ionically-resistive ionically-permeable element 1105 is configured to include pins 1107 that engage with holes 1109 in the substrate holder 1103. In this way, the ionically-resistive ionically-permeable element 1105 can be rotated along with the substrate holder 1103 when these elements are aligned and sufficiently close to one another. Two annular seals 111 1 are provided peripherally outside of the ionically-resistive ionically- permeable element 1105. These seals 1111 may act to prevent leakage of current in this region. The ionically-resistive ionically-permeable element 1105 may be supported at its bottom / center in some examples, as shown. Irrigation may be provided to direct electrolyte flow over a top surface of the membrane, for example using crossflowing electrolyte. The dotted line / arrow in FIG. 11 shows the direction of electrolyte flow. It should be understood that electrolyte is likewise traveling upward through the ionically-resistive ionically-permeable element 1105.

[0082] Various features are described herein for aligning an ionically-resistive ionically- permeable element (or an inner portion thereof) with one or more of a substrate holder, a ring, a keyed ring, a topside insert, or an outer portion of an ionically-resistive ionically-permeableelement. While these features are often described in separate examples, it is understood that such features may be combined as desired for a particular example.

[0083] The electroplating methods described herein can be implemented in an apparatus having a vessel configured for holding an electrolyte and an anode; and a semiconductor substrate holder configured to hold the semiconductor substrate such that the working surface of the semiconductor substrate is immersed into the electrolyte and is separated from the anode during electroplating. The apparatus includes a power supply and electrical connections configured for negatively biasing the substrate cathode and positively biasing the anode during electroplating. The apparatus further includes an ionically-resistive ionically-permeable element that is configured to rotate in alignment with the substrate holder during at least a portion of the electroplating process. In some examples, the apparatus further includes a mechanism configured to provide a transverse (lateral) flow of the electrolyte contacting the working surface of the substrate in a direction that is substantially parallel to the working surface of the substrate during electroplating. In some examples, the apparatus is configured for rotating the substrate at least during a portion of electroplating. The apparatus in some examples includes a separator positioned between the anode and the substrate holder, thereby defining an anode chamber and the cathode chamber, where the separator is configured for blocking any particles formed at the anode from crossing the separator and reaching the substrate. The separator is permeable to ionic species of the electrolyte and allows for ionic communication between the anode and cathode chambers.

[0084] An example of a portion of an electroplating apparatus that includes a mechanism for transverse flow, an ionically-resistive ionically-permeable element, and cathode and anode chambers is illustrated in FIG. 12. The apparatus includes a semiconductor substrate holder 1201 configured to hold and optionally rotate the semiconductor substrate 1203. A plurality of electrical contacts are made around the circumference of the substrate. The contacts are electrically connected to a power supply (not shown), that negatively (cathodically) biases the semiconductor substrate during the electrochemical electroplating. An anode 1205 is positioned below the substrate 1203 and is electrically connected to the power supply (not shown) that positively biases it during the electrochemical metal processing. Different types anodes can be used, including passive and active anodes. In some example the anode is a soluble anode that includes the metal that is being plated.

[0085] A conically shaped membrane 1207 is positioned between the anode 1205 and the cathodic substrate 1203 dividing the plating cell 1209 into an anode chamber 1211 and a cathode chamber 1213. The membrane 1207 is mounted on a frame 1212 such that the vertexof the cone is closer to the anode than the base of the cone. The membrane 1207 is made of an ion-permeable material, such as an ion-permeable polymer. The anode chamber includes an inlet 1217 and an outlet 1215 for the anolyte.

[0086] The cathode chamber 1213 is located above the membrane 1207 and houses the cathodically biased substrate 1203. In the depicted example, an ionically-resistive ionically - permeable element 1219 is positioned in the cathode chamber between the membrane 1207 and the substrate holder 1201. The ionically-resistive ionically-permeable element’s working surface is preferably substantially coextensive with the working surface of the substrate and is located in close proximity to the substrate’s working surface during electroplating. The ionically-resistive ionically-permeable element 1219 has a substrate-facing surface and an opposing surface, and is located such that the closest distance between the substrate-facing surface to the working surface of the substrate during the electrochemical processing is in some examples about 10 mm or less. In the illustrated example the substrate-facing surface of the ionically-resistive ionically-permeable element 1219 is planar, but in other examples, the ionically-resistive ionically-permeable element 1219 may include one or more protrusions on the substrate-facing surface or the opposing surface of the ionically-resistive ionically- permeable element 1219. The ionically-resistive ionically-permeable element 1219 is made of a dielectric material having pores. The ionically-resistive ionically-permeable element 1219 introduces a substantial resistance on the path of ionic current in the system and may be useful for reducing radial non-uniformity that can appear during electrodeposition due to a terminal effect. In various cases, the ionically-resistive ionically-permeable element 1219 can be tailored to provide non-uniform local resistance through different portions of the ionically- resistive ionically-permeable element 1219. Such a non-uniform local resistance can be designed to compensate for otherwise non-uniform plating rates on the substrate, such as nonuniformities within a die caused by non-uniform feature layout within the die. Ionically- resistive ionically-permeable elements having non-uniform local resistance are further described in PCT Patent Application No. PCT / US2022 / 020436, which is herein incorporated by reference in its entirety. Terminal effect can manifest itself in increased plating of metal near the edges of the substrate, if the electrical contacts to the substrate are made at the substrate periphery, which is typically the case. The ionically-resistive ionically-permeable element can serve as a high ionic resistance plate (or a non-uniform ionic resistance plate) for making field distribution more uniform and to reduce the described terminal effect, thereby improving radial uniformity in metal deposition. In some examples, the ionically-resistive ionically-permeable element 1219 further plays a role in shaping the flow of electrolyte in the vicinity of thesubstrate. It may serve as a flow resistive element defining the region of high electrolyte flow and confining the flow into the crossflow region. For example, it may serve to provide a narrow gap (e.g., 10 mm or less) between the substrate-facing surface of the ionically-resistive ionically-permeable element 1219 and the working surface of the substrate into which the electrolyte is laterally injected. This arrangement facilitates the transverse (lateral) flow of the electrolyte near the surface of the substrate. In various examples herein, the ionically-resistive ionically-permeable element 1219 is configured to align and register with the substrate holder 1201 , for example using any combination of the alignment elements described herein. The ionically-resistive ionically-permeable element 1219 may be configured to rotate along with the substrate holder 1201 while these elements remain aligned. Such rotation may take place during at least a portion of the electroplating process.

[0087] The electrolyte (catholyte) can be injected into the gap using a crossflow injection manifold 1221 that may be at least partially defined by a cavity in the ionically-resistive ionically-permeable element 1219. In various examples herein, this cavity may be located in another piece of hardware that may be positioned peripherally outside of the ionically-resistive ionically-permeable element. In some cases this hardware is a ring or an outer portion of an ionically-resistive ionically-permeable element assembly, as described herein. The crossflow injection manifold is arc-shaped and is positioned proximate the periphery of the substrate. A crossflow confinement ring 1223 is positioned proximate the periphery of the substrate at least partially between the ionically-resistive ionically-permeable element 1219 and the substrate holder 1201. The crossflow confinement ring 1223 at least partially defines the side of the gap between the ionically-resistive ionically-permeable element 1219 and the substrate. The cathode chamber has an inlet 1225 to the gap adapted to receive the catholyte from source of catholyte through, for example, the crossflow injection manifold, and an outlet 1227 to the gap adapted for removing the catholyte from the gap. The inlet 1225 and the outlet 1227 are positioned proximate azimuthally opposing perimeter locations of the working surface of the substrate (and also proximate azimuthally opposing perimeter locations of the substrate holder 1201 and proximate azimuthally opposing perimeter locations of the ionically-resistive ionically-permeable element 1219). The inlet 1225 and the outlet 1227 are adapted to generate the crossflow of electrolyte in the gap and to create or maintain transverse flow of electrolyte near the working surface of the substrate during electrochemical deposition. In some examples the ionically-resistive ionically-permeable element 1219 serves the dual purpose of shaping ionic current distribution proximate the substrate, and of restricting electrolyte flow to provide a defined space for transverse flow of the electrolyte near the substrate.

[0088] The apparatus may optionally include a reference electrode 1229, configured to measure potential proximate the substrate. The power supply, reference electrode and other elements of the apparatus are in electrical communication with a controller 1231, which has a processor and a memory, and has program instructions for controlling the operation of the apparatus. For example, an electrical connection 1230 can connect the reference electrode 1229 with the controller 1231. The controller may include program instructions for performing any of the methods described herein.

[0089] The crossflow of catholyte in the gap between the ionically-resi stive ionically- permeable element 1219 and the substrate can be generated using a variety of methods. In some examples, a flow confining element configured to restrict the flow in the gap to a transverse flow is provided. The apparatus in some examples is configured to provide a transverse flow having a velocity of at least about 3 cm / second across the center of the substrate. In some examples it is preferable to provide a vigorous transverse flow with a transverse flow rate of at least 10 cm / second, such as between about 10 - 90 cm / second or between about 20 - 80 cm / second across the center point of the substrate. Such relatively high transverse flow rates can be achieved for example using lateral injection of electrolyte into a gap proximate the substrate or by using reciprocating paddle movement.

[0090] In different implementations, the transverse flow may be generated using one or more of the following mechanisms: (1) a lateral electrolyte flow injector; (2) a flow diverter configured to divert electrolyte flow to a transverse flow; (3) an ionically-resistive ionically- permeable element having variation from uniformity in number, orientation and distribution of holes at or near the center of the rotating substrate, such as an element in which at least some of the holes proximate to the center of the rotating work piece have an angle deviating from vertical (more generally, an angle that is not perpendicular to the plating face of the rotating substrate), (4) a mechanism for generating a lateral component of relative motion between the work piece surface and the ionically-resistive ionically -permeable element (e.g., a relative linear or orbital motion), (5) one or more reciprocating or rotating paddles or a plate with a number of paddles or fan blades that force fluid to move at least partially transverse to the substrate as the plate is moved (e.g., a paddlewheel or impeller) provided in the plating cell, and (6) a rotating assembly attached to or proximate to the flow shaping plate and offset from the axis of rotation of the work piece. The apparatus in some examples includes a substrate holder that is part of the module / processing station, where the substrate holder stays in the module and / or processing station but can optionally rotate and move up and down within the processing station or module, e.g. the substrate holder can have a clam-shell design. In anotherexample the substrate holder can be removable from the processing station and travel through the tool with the substrate that it holds, forming a seal and releasing the substrate from the carrier elsewhere than at the metal deposition processing station.

[0091] An alternative example of an electrodeposition apparatus 1300 is schematically illustrated in FIG. 13. In this example, the electrodeposition apparatus 1300 has a set of electroplating cells 1307, each containing an electroplating bath, in a paired or multiple “duet” configuration. In addition to electroplating per se, the electrodeposition apparatus 1300 may perform a variety of other electroplating related processes and sub-steps, such as spin-rinsing, spin-drying, metal and silicon wet etching, electroless deposition, pre-wetting and prechemical treating, reducing, annealing, electro-etching and / or electropolishing, photoresist stripping, and surface pre-activation, for example. The electrodeposition apparatus 1300 is shown schematically looking top down in FIG. 13, and only a single level or “floor” is revealed in the figure, but it is to be readily understood by one having ordinary skill in the art that such an apparatus, e.g., the Lam Sabre™ 3D tool, can have two or more levels “stacked” on top of each other, each potentially having identical or different types of processing stations.

[0092] Referring once again to FIG. 13, the substrates 1306 that are to be electroplated are generally fed to the electrodeposition apparatus 1300 through a front end loading FOUP 1301 and, in this example, are brought from the FOUP to the main substrate processing area of the electrodeposition apparatus 1300 via a front-end robot 1302 that can retract and move a substrate 1306 driven by a spindle 1303 in multiple dimensions from one station to another of the accessible stations — two front-end accessible stations 1304 and also two front-end accessible stations 1308 are shown in this example. The front-end accessible stations 1304 and 1308 may include, for example, pre-treatment stations, and spin rinse drying (SRD) stations. Lateral movement from side-to-side of the front-end robot 1302 is accomplished utilizing robot track 1302a. Each of the substrates 1306 may be held by a cup / cone assembly (not shown) driven by a spindle 1303 connected to a motor (not shown), and the motor may be attached to a mounting bracket 1309. Also shown in this example are the four “duets” of electroplating cells 1307, for a total of eight electroplating cells 1307. A system controller (not shown) may be coupled to the electrodeposition apparatus 1300 to control some or all of the properties of the electrodeposition apparatus 1300. The system controller may be programmed or otherwise configured to execute instructions according to processes described earlier herein.

[0093] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms forprocessing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0094] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some examples, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0095] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may includea user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0096] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0097] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.Conclusion

[0098] Although the foregoing examples have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the present examples. Accordingly, the present examples are to be considered as illustrative and not restrictive, and the examples are not to be limited to the details given herein.

Claims

CLAIMSWhat is claimed is:

1. An electrodeposition apparatus comprising:(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate;(b) a substrate holder configured to hold the substrate and maintain separation between a plating face of the substrate and the anode during electroplating; and(c) an ionically-resistive ionically-permeable element comprising a substrate-facing surface and an opposing surface, wherein the ionically-resistive ionically-permeable element allows for flow of ionic current through the ionically-resistive ionically-permeable element towards the substrate during electroplating, wherein the ionically-resistive ionically-permeable element and the substrate holder are configured to mate and align with one another and rotate together relative to the plating chamber.

2. The apparatus of claim 1, wherein the ionically-resistive ionically-permeable element comprises pins on its substrate-facing surface, wherein the substrate holder comprises holes, and wherein the pins on the ionically-resistive ionically-permeable element are configured to mate with the holes on the substrate holder.

3. The apparatus of claim 1, wherein the ionically-resistive ionically-permeable element comprises holes on its substrate-facing surface, wherein the substrate holder comprises pins, and wherein the pins on the substrate holder are configured to mate with the holes on the ionically-resistive ionically-permeable element.

4. The apparatus of claim 1, wherein rotating the substrate holder causes the ionically-resistive ionically-permeable element to be rotated in sync with the substrate holder when the substrate holder and ionically-resistive ionically-permeable element are mated with one another.

5. The apparatus of claim 1, further comprising one or more bumpers positioned on the substrate holder and / or on the ionically-resistive ionically-permeable element, wherein the one or more bumpers are configured to ensure that a target distance is provided betweenthe substrate-facing surface of the ionically-resistive ionically-permeable element and the substrate holder when the ionically-resistive ionically-permeable element and substrate holder are mated with one another.

6. The apparatus of claim 1, further comprising an annularly-shaped seal positioned proximate a periphery of the ionically-resistive ionically-permeable element, either below the ionically-resistive ionically-permeable element or radially outside of the ionically- resistive ionically-permeable element, wherein the seal accommodates rotation of the ionically- resistive ionically-permeable element.

7. The apparatus of claim 6, wherein the seal accommodates simultaneously rotating the ionically-resistive ionically-permeable element and electroplating the metal onto the substrate.

8. The apparatus of claim 6, wherein the seal comprises a spring coil.

9. The apparatus of claim 1 , wherein either (1 ) the substrate holder comprises pins that are configured to mate with holes on the substrate-facing surface of the ionically-resistive ionically-permeable element, or (2) the substrate holder comprises holes that are configured to mate with pins on the substrate-facing surface of the ionically-resistive ionically-permeable element.

10. The apparatus of claim 9, wherein the pins and / or holes are shaped to automatically align themselves with one another as they approach.

11. The apparatus of claim 9, wherein a geometry of the pins and holes ensures that a target distance is provided between the substrate-facing surface of the ionically-resistive ionically-permeable element and the substrate holder when the ionically-resistive ionically- permeable element and the substrate holder are mated with one another.

12. The apparatus of claim 9, wherein a geometry of the pins and holes ensures that the substrate holder is held within a target range of planarity when the ionically-resistive ionically-permeable element and the substrate holder are mated with one another.

13. The apparatus of claim 9, wherein one or more of the holes is configured as a slit.

14. The apparatus of claim 1, wherein the ionically -resistive ionically -permeable element is configured as an assembly including an inner portion and an outer portion, the inner portion being circularly-shaped, the outer portion being annularly shaped, wherein the inner portion of the ionically-resistive ionically -permeable element is configured to rotate together with the substrate holder, and the outer portion of the ionically-resistive ionically-permeable element is not configured to rotate.

15. The apparatus of claim 1, further comprising catch tabs configured to prevent the ionically-resistive ionically-permeable element from floating upward during electroplating, wherein the catch tabs can be switched between at least two positions including (1) an insertion / removal position in which the ionically-resistive ionically-permeable element can be removed from the apparatus, and (2) an electroplating position in which the ionically-resistive ionically-permeable element cannot be removed from the apparatus.

16. The apparatus of claim 1, wherein the ionically-resistive ionically-permeable element is positioned within a ring that comprises pins or tabs that extend radially inward, wherein the ionically-resistive ionically-permeable element comprises openings that align with the pins or tabs in the ring, and wherein the pins or tabs in the ring ensure that the ionically- resistive ionically-permeable element remains at a target height during electroplating.

17. The apparatus of claim 16, wherein the ionically-resistive ionically-permeable element further comprises indents, wherein the pins or tabs in the ring align with the openings in the ionically-resistive ionically-permeable element when the ionically-resistive ionically- permeable element and the ring are at a first relative rotational position, and wherein the pins or tabs in the ring align with the indents in the ionically-resistive ionically-permeable element when the ionically-resistive ionically-permeable element and the ring are at a second relative rotational position.

18. The apparatus of claim 1, wherein the ionically-resistive ionically-permeable element has a non-uniform thickness, wherein the opposing surface of the ionically-resistive ionically-permeable element is conically-shaped, and wherein the ionically-resistive ionically-permeable element is configured to float on the electrolyte above a membrane frame.

19. The apparatus of claim 1 , further comprising a controller having at least one processor and a memory, wherein the at least one processor and the memory are communicatively connected with one another, and the memory stores computer-executable instructions for controlling the at least one processor to cause: rotating the substrate holder and the ionically -resistive ionically-permeable element together during at least a portion of an electroplating process on a substrate.

20. The apparatus of claim 19, wherein the memory stores computer-executable instructions for controlling the at least one processor to cause: rotating the substrate holder and the ionically-resistive ionically-permeable element together while current is being actively supplied to the substrate to cause electrodeposition of metal on the substrate.

21. The apparatus of claim 1, wherein the ionically-resistive ionically-permeable element comprises a pattern that provides a non-uniform profile of resistance through the ionically-resistive ionically-permeable element, wherein the pattern on the ionically-resistive ionically-permeable element corresponds to a pattern of features on the substrate being electroplated.

22. A method of electroplating metal onto a substrate, the method comprising: providing a substrate in a substrate holder of an electroplating apparatus, wherein the electroplating apparatus comprises an ionically-resistive ionically-permeable element that can be positioned within about 10 mm of a plating face of the substrate; moving the substrate holder and / or the ionically-resistive ionically-permeable element toward one another such that the substrate holder and ionically-resistive ionically-permeable element mate and align with one another; rotating the substrate holder and the ionically-resistive ionically-permeable element together while the substrate holder and the ionically-resistive ionically-permeable element remain rotationally aligned with one another; and electroplating the metal onto the substrate.