A method for controlled, real-time selective irradiation of a predetermined dose onto a target area of ​​a surface, and the corresponding system.

Abstract

The present invention relates to a method for the controlled selective irradiation of a target area on the surface of a given product or living organism, to enable the localized irradiation of this target area in order to obtain a target effect. This method is implemented by a system comprising an emitting device, at least one measurement and analysis device, and a control device. This method comprises the steps of: - real-time measurement and recording of the actual principal energy at the level of the target area; - analysis and recording of the actual effect obtained at the level of this target area; and - real-time control of the emitting device by the control device, taking into account the measurement of the actual principal energy and the analysis of the actual effect, which are compared respectively to a predetermined energy threshold associated with the target area and to the expected target effect, so that,If the predetermined energy threshold is not reached but the target effect is achieved, irradiation of the target area is stopped. Figure for the abbreviation: 1,

Description

Title of the invention: Method for real-time controlled selective irradiation of a predetermined dose onto a target area of ​​a surface, and corresponding system Technical field of the invention

[0001] The present invention relates to the general field of surface irradiation by energetic radiation.

[0002] The invention relates more particularly to a method for the controlled selective irradiation of a target area of ​​a surface, implementing a system comprising a programmable emitting device, at least one measurement and analysis device, and a controller device, these devices being connected to each other in a closed loop. In this method, the controller device controls the emitting device in real time during the irradiation process, based on data relating to the actual energy measured at the irradiated target area and the actual effect obtained at this target area. This method according to the invention is also capable of taking into account collateral energies measured around the irradiated target area. Technical background

[0003] Those skilled in the art of irradiation processes, particularly those adapted to the field of additive manufacturing, are known to the public. For example, one can cite the process described in patent application DE102015216583 A1, which is implemented by an irradiation system comprising, on the one hand, a source emitting energetic radiation such as laser beams, and on the other hand, a control device configured to adjust the radiation source according to the object to be manufactured. This adjustment of the radiation source by the control device is a function of parameters previously entered into the control device: the latter can then control the radiation source so that it reaches the predetermined energy parameters associated with it.

[0004] However, such a process has the disadvantage of not being able to take into account the actual progress of the manufacture of the object, and thus control the emitting source according to predetermined data and at the same time data measured in real time.

[0005] To overcome this drawback, new additive manufacturing processes using irradiation have been developed: one example is the process disclosed in patent EP3311983 Bl, which is capable of controlling the emitting source in real time during irradiation, to adapt to the actual object being manufactured. To achieve this, the irradiation process of EP3311983 Bl is implemented by an irradiation system which It also includes a device capable of measuring the energy emitted by the radiation from the emitting source at the irradiated area and transmitting this measured data to the control device. This control device is then able to adjust the power and / or intensity of the energy radiation emitted by the emitting source during the irradiation process so that the energy actually emitted does not deviate from the basic energy parameters.

[0006] However, although this method allows real-time control of the emitting source, it still does not allow control of this emitting source to enable it to take into account the actually expected result, apart from the basic energy parameters: the control device is thus not able to control the emitting source to:

[0007] - that it stops when the manufacture of the expected product is finished, even if the basic parameters are not met, or

[0008] - that the source continues to emit energetic radiation while the pa Basic energy parameters are reached (the production of the expected product is not yet complete). In the EP3311983 Bl process, the power or energy intensity of the emitting source can be adjusted, and in particular reduced, or even switched off, if the control device determines that the threshold energy dose has been reached, or conversely, increased to reach this threshold. However, the EP3311983 Bl process does not allow the control device to determine whether the basic energy parameters actually enable the expected final result to be achieved. Consequently, such an irradiation system has the disadvantage of either generating energy and time losses, if the emitting source continues to emit radiation even though the final result has already been achieved, or failing to achieve the desired result, if the source stops because it has reached the basic energy parameters, but the final result has not been achieved.

[0009] There is therefore a need for new processes and systems of irradiation by energetic radiation which adapt efficiently in real time to the result actually obtained at the level of the irradiated surface, while making it possible to reduce losses. Summary of the invention

[0010] To this end, the invention proposes, according to a first object, a method for the controlled selective irradiation of a target area on the surface of a given product or living organism, to enable the localized irradiation of this target area in order to obtain a targeted effect. This method is implemented by a system comprising an emitting device, at least one measuring and analyzing device, and a controlling device. This method comprises the following steps: A) segmentation of the surface into a plurality of zones; B) input into the controller device of predetermined main energy thresholds respectively associated with each of the zones, and input of the target effect to be obtained; C) selection of the target area from among the areas and their combinations; D) irradiation of the target area by emission of energetic radiation by the emitting device, this emission being controlled by the controlling device in order to reach the predetermined main energy thresholds; E) measurement and recording in real time, by the measurement and analysis device, of the actual energy generated by the energetic radiation at the level of the target area; F) analysis and recording, by the measurement and analysis device, of the actual effect obtained at the level of the irradiated target area; G) transmission of the actual energy measurement and the actual effect analysis to the controlling device; H) Real-time control of the emitting device by the controlling device during the irradiation process, taking into account the measurement of the actual energy and the analysis of the actual effect received, the measurement of the actual energy being compared to the predetermined main energy threshold associated with the target area (C), and the analysis of the actual effect being compared to the target effect, so that: -Hl) if the main energy threshold is not reached and the target effect is not achieved, the emission of energetic radiation on the target area continues and the power and / or intensity of the energetic radiation is modulated to achieve the target effect (O); -H2) if the main energy threshold is reached but the target effect is not achieved, the emission of energetic radiation on the target area continues and the power and / or intensity of the energetic radiation is modulated to achieve the target effect; -H3) if the main energy threshold is reached and the target effect is achieved, the emission of energetic radiation on the target area is stopped; -H4) if the main energy threshold is not reached but the target effect is achieved, the emission of energetic radiation on the target area is stopped.

[0011] Such a method according to the invention thus makes it possible to control the real-time irradiation of a target area, taking into account basic energy and target effect parameters, but also taking into account the actual energy felt at the level of the target area and the actual effect obtained at that area. Thus, unlike prior art irradiation methods, according to the method of the invention, the predetermined energy parameters, which serve as a guide for conducting the irradiation process, are not necessarily reached when this is not useful: indeed, this method according to the invention is capable of determining that the irradiation can be The process is halted because the target effect, which is analyzed in parallel with the measurement of the actual energy, has already been achieved, even though the actual energy parameters do not perfectly match the baseline energy parameters. Conversely, according to the method of the invention, and again unlike prior art irradiation methods, it can be determined that the effective irradiation of the target area must continue, even though the predetermined parameters have already been reached, thus ensuring that the expected effect is obtained. Furthermore, if a comodality of trends in the correction parameters is validated, the initial parameters are self-corrected.

[0012] This real-time modulation of energy parameters, and in particular the cessation of the emission of energetic radiation as soon as it is determined that the target effect is obtained, advantageously reduces the energy and financial losses usually associated with conventional irradiation processes, since the continuous and unnecessary irradiation of the target area for which the target effect is already achieved is limited, or even eliminated.

[0013] Furthermore, the ability to concentrate irradiation on a specific target area makes it possible to irradiate only the required surface locally, minimizing or even eliminating peripheral irradiation, which is a major cause of energy and financial losses in known irradiation processes. This advantage is also very clearly illustrated in the healthcare field, for example by minimizing the risk of burns in areas surrounding the irradiated target area.

[0014] Such a process can be implemented in all fields that involve the irradiation of a material for a given purpose. For example, this process can be implemented in the field of microelectronics to manufacture semiconductor components by additive manufacturing: the target effect in this case corresponds to the solidification of at least a portion of a material layer using an irradiation polymerization process. This process can also be implemented in the medical field: the effect in this case corresponds to the destruction of a tumor by irradiation. Furthermore, this process can be implemented in the field of cosmetics, particularly in nail care: the target effect in this case corresponds to the solidification of a layer of nail polish via irradiation polymerization.

[0015] According to one embodiment, the process according to the invention further comprises the following steps:

[0016] A') input into the predetermined secondary energy threshold control device finished respectively associated with each of said zones;

[0017] B') real-time measurement and recording by the measurement and analysis device, of the actual collateral energy, generated at the level of at least one zone of the plurality of zones which is adjacent to the target zone, this actual collateral energy being generated by the energetic radiations irradiating the target zone;

[0018] C') transmission of the measurement of the actual collateral energy to the control device;

[0019] D') real-time control of the transmitting device by the controlling device during of the irradiation process, taking into account the measurement of the actual collateral energy,

[0020] this measurement of the actual collateral energy being compared to the predetermined secondary energy threshold associated with at least one zone of the plurality of zones that is adjacent to the target zone, such that:

[0021] if the secondary energy threshold of at least one zone adjacent to the target zone is reached, the power and / or intensity of the energetic radiation irradiating the target zone (C) are modulated to reduce the actual collateral energy.

[0022] It is thus also possible, according to the method of the invention, to modulate the emitting source according to secondary parameters, and in particular according to the collateral energy felt and measured in the areas adjacent to the irradiated target area. In the same way as for controlling the emitting source according to the actual energy measured in the irradiated target area, the system of the invention is capable of comparing the actual energy of the areas adjacent to the target area to energy thresholds in these areas, which correspond to so-called secondary thresholds, taken into account when the areas associated with these thresholds are not target areas, but collateral areas to the target area.The method according to the invention therefore advantageously allows very precise control of the irradiation of the target area, according to parameters at different levels (primary and secondary), which are not necessarily related to the area actually irradiated.

[0023] According to a particular embodiment, the target area corresponds to the entire surface.

[0024] The method according to the invention, which allows control of the emitting device in real time, makes it possible to irradiate only part of the target area, or the whole of it.

[0025] According to a particular embodiment, the emitting device is fixed and chosen from a matrix comprising a plurality of independent emitting sources and an emitting source associated with an optical galvanometer.

[0026] Thus, when the emitting device is an array comprising a plurality of independent emitting sources, the control of the emitting device by the controller can correspond to the activation and / or deactivation of one or more of the multiple emitting sources composing the emitting device, depending on the actual energy measured and the actual effect analyzed at the level of the target area. For example, the method according to the invention allows the controller to reduce the power and / or energy intensity of certain emitting sources of the emitting device, or even to deactivate some of them, if the controller determines that the actual energy at the level of certain portions of the target area approaches, or even reaches or exceeds, the predetermined main energy threshold, and that the target effect is close to being obtained, or even already obtained. Conversely, this irradiation process also allows the controlling device to increase the power and / or energy intensity of certain emitting sources of the emitting device, or even to activate some of them, if the controlling device determines that the actual energy at the level of certain portions of the target area is below the predetermined main energy threshold, and that the target effect is not obtained.

[0027] According to a particular embodiment, when the emitting device is a matrix comprising a plurality of independent emitting sources, these independent emitting sources are LEDs.

[0028] LEDs are devices that are easy to integrate into the system of the invention, simple to implement and handle, and inexpensive.

[0029] According to one embodiment, the emitting device is mobile, such as a mobile source mounted on an axis.

[0030] According to a particular embodiment, the measurement and analysis device is a thermal and / or radiative imaging sensor, associated with an image analysis module.

[0031] Thus, the measurement and analysis device implemented in the irradiation process according to the invention is capable of simultaneously measuring the actual energy at the target zone and the actual energy at the zones adjacent to the target zone, and of analyzing the progress / state of the actual effect at the target zone, while avoiding damage to the target. It can therefore transmit these two types of data to the control device, which is then able to determine how to control the emitting device to reach the predetermined energy thresholds and, at the same time, the expected target effect.

[0032] According to a particular embodiment, the controller device is a Human-Machine interface.

[0033] Such an interface is easy to integrate into the system of the invention, and simple to implement and manipulate.

[0034] According to a particular embodiment, the energetic radiations are chosen from visible light, infrared, gamma, ultraviolet, laser, microwave, X-ray, and convective or conductive thermal deployment radiations.

[0035] The process according to the invention can thus advantageously be adapted to any type of irradiation, and can, according to at least one embodiment, combine them.

[0036] According to a second object, the invention proposes a system for the controlled selective irradiation of a target area of ​​the surface of a given product or living being, segmented into a plurality of areas, this system implementing the process as described above, and comprising: - a transmitting device, configured to irradiate the target area with energetic radiation, - at least one measurement and analysis device, configured to measure the actual energy generated by the energetic radiation at the target area and the actual collateral energy generated at at least one area of ​​the plurality of areas that is adjacent to the target area, as well as to analyze the actual effect obtained at the irradiated target area, - a controller, configured to receive predetermined primary and secondary energy thresholds, respectively associated with each of the zones and a target effect to be obtained, as well as to receive the measurement of the actual energy and the actual collateral energy generated at the level of at least one zone of the plurality of zones which is adjacent to the target zone, as well as the analysis of the actual effect, the controller comprising means for comparing the measurement of the actual energy to the predetermined primary energy threshold associated with the target zone, the measurement of the actual collateral energy to the predetermined secondary energy threshold of at least one zone adjacent to the target zone, and the analysis of the actual effect to the target effect, the controller being further configured to control the emitting device in real time during the irradiation process by stopping the emission of energetic radiation,and / or by modulating the power and / or intensity of the energetic radiation, and / or by selectively modulating the irradiated areas.

[0037] This system offers at least the same advantages as those presented in relation to the corresponding process. It corresponds to a closed loop, which is advantageously fully traceable.

[0038] According to a particular embodiment, the measurement and analysis device comprises: -at least one measurement and recording device configured to measure the actual energy generated by energetic radiation at the target area, and the actual collateral energy at at least one area adjacent to the target area, and -at least one means of analysis and recording configured to analyze the actual effect obtained at the level of the irradiated target area.

[0039] This device therefore plays an important role in taking into account both the actual energy felt at the target area and the state of the actual effect at that area. Throughout the irradiation process, these two types of data are compared to equivalent baseline data via the control device, which is then able to determine whether the expected target effect is actually achieved at the target area and can consequently control the emitting device on demand with the ultimate goal of achieving the target effect on the target area. Furthermore, secondary parameters relating to areas adjacent to the actually irradiated target area are also monitored to ensure that variations in the parameters of the emitting source do not impact the integrity of the target. An analysis of Trends in target parameter variations (AI) are performed through iterations to adjust predetermined parameters. Brief description of the figures

[0040] Other features and advantages of the invention will become apparent upon reading the detailed description that follows, for an understanding of which reference should be made to the accompanying drawing in which:

[0041] [Fig-1] - [Fig.1] schematically illustrates the controlled selective irradiation system according to the invention. Detailed description of the invention

[0042] The controlled selective irradiation process is implemented by an irradiation system as illustrated in [Fig. 1]. Such a system comprises an emitting device 11, at least one measuring and analyzing device 12, and a controller device 13, which operate in a closed loop. Generally, the measuring and analyzing device 12 measures the actual energy data and analyzes the actual effect at the target area when the emitting device 11 irradiates energetic radiation at that target area. It then transmits these two types of data to the controller device 13, which is then able to control the emitting device 11 by modulating the energy parameters of the energetic radiation emitted by it, taking into account the predetermined parameters with which it has been loaded (energy thresholds and expected effect) and the actual data transmitted by the measuring and analyzing device 12.

[0043] In the embodiment of [Fig. 1], the emitting device 11 emits energetic radiation R at the level of a target area C to be irradiated, belonging to a surface S which is composed of a plurality of areas SI, S2...Si...Sn. In other embodiments of the invention, the target area may correspond to the combination of several areas of the plurality of areas SI, S2...Si...Sn of the surface to be irradiated, and may also correspond to the entirety of the surface S, that is to say, include all of the plurality of areas which compose this surface S. The emission of energetic radiation R on the target area C produces a real energy E1C at the level of this target area, which is measurable by the method of the invention.

[0044] In this embodiment, the emitting device 11 corresponds to an array comprising a plurality of independent emitting sources 111. These sources 111 can be activated or deactivated independently of each other by the system's control device 13, depending in particular on the actual energy E1C measured at the irradiated target area C, as well as the actual effect A1C obtained at this area, these actual data being compared to predetermined data, corresponding to predetermined energy thresholds and the final effect. expected at the level of the surface to be irradiated. According to an example, these 111 independent sources are LEDs.

[0045] According to other embodiments, not illustrated, the emitting device 11 can be a mobile source mounted on an XY(Z) axis, capable of moving along this axis, or a source positioned statically and reoriented towards the target area to be irradiated by an optical galvanometer.

[0046] The actual energy E1C and the actual effect A1C at the target area C are measured and analyzed by the measurement and analysis device 12 of the system. For this purpose, this device 12 comprises at least one measurement and recording means M for measuring the actual energy E1C at the irradiated target area C, as well as at least one analysis and recording means A for analyzing the actual effect A1C at this area. In a particular example, this device 12 corresponds to a camera which comprises, as a measurement and recording means M, a thermal device for measuring the temperature at the irradiated target area, which temperature corresponds to the actual energy E1C, and / or a radiation analysis device for measuring any type of energetic radiation emitted by the emitting device 11 at the irradiated target area.According to this particular example, the device 12 further comprises, as an analysis and recording means A, an image analysis device for analyzing the actual effect A1C obtained at the irradiated target area. The measurement and analysis device 12 according to the invention is in all cases capable of recording this measured energy data E1C and analyzed effect data A1C, and transmits these two types of data to the system's control device 13.

[0047] This control device 13 therefore includes the actual data of the irradiated target area C, which it received from the measurement and analysis device 12, and it further includes predetermined data that were loaded into this device 13 at the beginning of the irradiation process. This predetermined data includes the predetermined principal energy thresholds E2S1, E2S2, ..., E2Si, ..., E2Sn, which are respectively associated with each of the SI, S2, ..., Si, ..., Sn zones of the surface S to be irradiated, as well as with the target effect O to be obtained. In order to control the emitting device 11 in real time, this control device 13 includes means for comparing the measurement of the actual energy E1C to the predetermined principal energy threshold E2C associated with the target area C, and means for comparing the analysis of the actual effect A1C to the target effect O.Thus, the device 13 is capable of controlling the emitting device 11 in real time by operating different actions, which are a function of the real energy E1C and at the same time of the real effect A1C at the level of the target zone C. In particular, according to a first case, if the controlling device 13 determines, through its different means of comparison, that the real energy E1C of the target zone C is less than the predetermined main energy threshold E2C for this zone, and that at the same time the real effect A1C. at the level of this area does not correspond to the target effect O, it controls the emitting device 11 so that it continues to emit energetic radiation on the target area, and it modulates the power and / or intensity of this radiation, until the target effect O is obtained.

[0048] According to a second case, if the control device 13 determines that the actual energy E1C of the target area C corresponds to the predetermined main energy threshold E2C for this area, but that the actual effect A1C does not correspond to the target effect O, it controls the emitting device 11 so that it continues to emit energetic radiation on the target area, and it modulates the power and / or intensity of this radiation, until the target effect O is obtained.

[0049] According to a third case, if the control device 13 determines that the actual energy E1C of the target area C corresponds to the predetermined main energy threshold E2C, and that both the actual effect A1C at the level of this area corresponds to the target effect O, it controls the emitting device 11 so that the latter stops the emission of energetic radiation on the target area O, since the target effect O is indeed obtained.

[0050] Finally, according to a fourth case, if the control device 13 determines that the actual energy E1C of the target area C is less than the predetermined main energy threshold E2C, but that the actual effect A1C corresponds to the target effect O, it controls the emitting device 11 so that the latter stops the emission of energetic radiation on the target area O, although the predetermined main energy threshold E2C is not reached, since the actual energy parameters of the radiation R have made it possible to obtain the target effect O.

[0051] According to one embodiment, this controller device 13 is a Human-Machine interface, which can for example be a computer, a tablet or a smartphone, or even an automaton.

[0052] Device 13 thus provides an advantageous energy saving, since it is capable of stopping the irradiation of the target area / surface when it is determined that the expected effect has been achieved, regardless of the basic energy thresholds entered into device 13. The emission of unnecessary radiation is therefore advantageously limited as soon as the target effect is obtained, which is relevant from a financial and environmental point of view.

[0053] The device 13 is also capable of independently controlling the plurality of emitting sources 111 of the emitting device 11, depending on the actual effect analyzed at the level of the target area C throughout the irradiation process, in order to adapt this target area. For example, if the control device 13 determines that the actual effect A1C at the level of the target area C corresponds to the target effect O on a part of this target area, but that this target effect O is not yet obtained over the entire area, it can act on the emitting device 11 to deactivate the LEDs 111 located above the portion of the target area for which the target effect O is achieved, and increase the power and / or energy intensity of the LEDs 111 located above the portion of the target area for which the target effect O is not yet achieved. Thus, the target area C actually irradiated is reduced.

[0054] According to the invention, the measurement and analysis device 12 is also capable of measuring the actual collateral energy E3 of one or more zones, for example of a zone Si, which is adjacent / collateral to the irradiated target zone C. This measurement is recorded within the device 12, which transmits it to the control device 13. In the latter, secondary energy thresholds E4S1, E4S2, E4Si.. .E4Sn, associated with each of the zones constituting the surface S, have been previously entered: the control device 13 is then able to compare the collateral energy E3Si measured at the level of the zone Si adjacent to the irradiated target zone C to the secondary energy threshold E4Si of this zone.Depending on the outcome of this comparison, it can modulate the emitting source 11 to impact the actual collateral energy E4Si of this area adjacent to the irradiated area C in one direction or the other: it can reduce the power and / or intensity of the radiation from source 11 to reduce this collateral energy E3Si if it is determined that it has reached the secondary energy threshold E4Si of this area, or conversely, it can increase the power and / or intensity of the radiation from source 11 to increase this collateral energy E3Si if it is determined that it has not yet reached the secondary energy threshold E4Si of this area. Thus, the interpretation of measurements from secondary sensors linked to the energies generated collaterally to the irradiated target area C makes it possible to preserve the integrity of the target.

[0055] It is therefore understood that, according to the invention, each of the zones constituting the surface S to be irradiated is associated with two types of predetermined energy thresholds, entered into the control device 13: first predetermined energy thresholds E2, called main energy thresholds, and second predetermined energy thresholds E4, called secondary energy thresholds.

[0056] The energetic radiations R emitted by the emitting device 11 can be visible light radiation, infrared, gamma, ultraviolet, laser, or convective or conductive thermal deployment.

[0057] Several examples of implementation of the irradiation method and system according to the invention for different applications are presented below. It is understood that these examples are not limiting, and that the invention can be implemented for any type of application involving the energetic irradiation of a surface to obtain a given effect. First example of achievement

[0058] The method according to the invention can be implemented in the case of application of a suitable varnish layer on a target area C, which may correspond to one or more nails of a hand and / or foot, with the aim of obtaining a target effect O which corresponds to the solidification of the varnish layer, by a polymerization process by irradiation.

[0059] In this first example, the emitting device 11 is a lamp which emits ultraviolet (UV) radiation towards the target area C which corresponds to one or more nails covered with a layer of varnish, and which consists of a multitude of UV LEDs 111.

[0060] The measurement and analysis device 12 is a UV radiation probe combined with a thermal camera, which includes a module for measuring the UV dose and the actual temperature E1C at the level of the surface of the irradiated nail(s) covered with varnish, and a module for visually analyzing the state of polymerization A1C of the varnish layer at the level of this area.

[0061] The controller device 13 is a computer into which the predetermined temperature E2C has been entered. This temperature is intended to achieve complete polymerization of the varnish layer in the target area C, as well as the target visual state O of the final polymerization of the varnish layer in this area. This computer 13 also includes means for comparing the actual temperature data E1C with the predetermined temperature data E2C for the target area C to be irradiated, and means for comparing the actual state A1C of the varnish layer polymerization with the expected polymerization state O for this area.

[0062] In this application example of the invention, the UV lamp 11 emits UV radiation towards the predetermined target area C. The thermal camera associated with the UV probe 12 then measures the actual temperature E1C of the target area C and analyzes the actual state A1C of the polymerization of the varnish layer in this area. It records these two types of information and transmits them to the control computer 13. The latter is then able to determine, using its comparison means, whether the varnish layer in the target area has been polymerized throughout the entire area, or whether one or more portions of this area still require irradiation to obtain the desired final effect O.It is therefore capable of increasing the power and / or intensity of the UV LEDs 111 of the lamp 11, or even activating LEDs that would be off, and which are positioned above the portion(s) of the target area for which the varnish layer is not yet fully polymerized, and conversely, of reducing the power and / or intensity of the UV LEDs 111, or even deactivating certain LEDs, which are positioned above the portion(s) of the target area for which the varnish layer has been fully polymerized or above areas of epidermis.

[0063] Furthermore, according to a particular embodiment of this example, the thermal camera associated with the UV probe 12 is capable of measuring and recording the energy Actual collateral radiation is detected in areas around the target nail, corresponding in particular to areas of skin surrounding the nail. This data is transmitted to the control computer 13, which then compares it to the secondary energy threshold data associated with these skin areas. If, after this comparison, the computer 13 determines that the actual collateral energy in these skin areas has reached the corresponding secondary thresholds, it then modulates the power and / or intensity of the UV LEDs 111 above the irradiated nail area to reduce the energy felt at the collateral level, on the skin areas. Thus, thanks to thermal imaging, the UV radiation adjacent to the target area C is controlled, preventing potential local burns.

[0064] Thus, the irradiation process and system according to the invention advantageously allow for substantial energy savings in the field of cosmetics, particularly nail care, because the control of the emitting devices 11 used to polymerize the layers of nail polish can be adapted to demand in a closed loop, depending on the evolution of the actual situation. It also minimizes the risks of skin cancer related to UV exposure and the risks of burns related to adjacent UV or IR radiation. Second example of implementation

[0065] The process according to the invention can also be implemented in the case of manufacturing a part by an additive manufacturing method, for example for manufacturing semiconductors in the field of microelectronics. Such a part is notably produced by solidification of the layer(s) of material added according to the additive manufacturing technique, by irradiation polymerization.

[0066] In this second example, the closed-loop irradiation system comprises an emitting device 11, which is a source that emits laser radiation towards the target area C, which corresponds to one or more areas of a layer of material deposited by additive manufacturing. This source 11 is made up of a multitude of laser sources 111. It also comprises a measurement and analysis device 12, which is a thermal camera as described in detail in the first example above. And it further comprises a controller device 13, which is a computer as also described in the first example above.

[0067] In this application example of the invention, the irradiation process comprises the same steps as the irradiation process of the preceding example. The laser sources 111 of the emitting device 11 are controlled (activated, deactivated, modulation of their power and / or intensity) by the control computer 13, according to the predetermined temperature E2C suitable for completely polymerizing the target area, and the expected visual state O corresponding to the complete polymerization of this area, taking into account both the actual temperature E1C measured at the level of this target area and the actual state of polymerization at the level of this area. control device 13 therefore allows the laser source 11 to be managed so that the emission of unnecessary laser radiation R, because it is located in a part of the totally polymerized target area, is limited, or even stopped.

[0068] This irradiation system, in this case of application to the field of additive manufacturing, may also be able to measure and analyze the collateral energy around the target area in manufacturing, in relation to secondary energy threshold data associated with areas adjacent to this target area.

[0069] Significant energy and financial savings can be achieved in the field of additive manufacturing. Selective radiation control also minimizes the overall temperature rise of the target. This has a direct impact on the integrity of the semiconductor module and opens up a range of potentially eco-friendly products for manufacturing these semiconductors.

Claims

Demands

1. A method for the controlled selective irradiation of a target area (C) of a surface (S) of a layer of material, such as a varnish layer or a layer of semiconductor material, to enable the localized irradiation of said target area (C) in order to obtain a target effect (O), consisting of the polymerization of the layer of material, said method being implemented by a system (1) comprising an emitting device (11), at least one measuring and analyzing device (12) and a controlling device (13), said method comprising the following steps: A) segmentation of said surface (S) into a plurality of zones (SI, S2...Sn); B) input into said controller device (13) of predetermined main energy thresholds (E2S1, E2S2...E2Sn) respectively associated with each of said zones (SI, S2.. .Sn) and input of said target effect (O) to be obtained; C) selection of said target zone (C) from said zones (SI, S2...Sn) and their combinations; D) irradiation of said target area (C) by emission of energetic radiation (R) by said emitting device (11), said emission being controlled by said controlling device (13) with the aim of reaching said predetermined main energy thresholds (E2S1, E2S2...E2Sn); E) measurement and recording in real time, by said measurement and analysis device (12), of the actual energy (E1C) generated by energetic radiation (R) at the level of said target area (C); F) analysis and recording, by said measuring and analysis device (12), of the actual effect (A1C) obtained at the level of said irradiated target area (C); (g) transmission of the measurement of said actual energy (E1C) and of the analysis of said actual effect (A1C) to said control device (13); (h) real-time control of said emitting device (11) by said control device (13) during the irradiation process, taking into account said measurement of actual energy (E1C) and said analysis of actual effect (A1C) received, said measurement of actual energy (E1C) being compared to the predetermined principal energy threshold (E2C) associated with said target area (C), and said

2. analysis of the actual effect (A1C) being compared to the target effect (O), such that: - Hl) if said main energy threshold (E2C) is not reached and said target effect (O) is not obtained, the emission of energetic radiation (R) on said target area (C) continues and the power and / or intensity of said energetic radiation (R) are modulated to obtain said target effect (O); - H2) if said main energy threshold (E2C) is reached but said target effect (O) is not obtained, the emission of energetic radiation (R) on said target area (C) continues and the power and / or intensity of said energetic radiation (R) are modulated to obtain said target effect (O); - H3) if said main energy threshold (E2C) is reached and said target effect (O) is obtained, the emission of energetic radiation (R) on said target area (C) is stopped; - H4) if said main energy threshold (E2C) is not reached but said target effect (O) is obtained, the emission of energetic radiation (R) on said target area (C) is stopped. The method according to claim 1, further comprising the following steps: A') input into said controller device (13) of predetermined secondary energy thresholds (E4S1, E4S2, E4Si...E4Sn) respectively associated with each of said zones (SI, S2...Sn); B') measurement and recording in real time, by said measurement and analysis device (12), of the actual collateral energy (E3Si), generated at the level of at least one zone (Si) of said plurality of zones (SI, S2.. .Sn) which is adjacent to said target zone (C), said actual collateral energy (E3Si) being generated by energetic radiations (R) irradiating said target zone (C); (c') transmission of the measurement of said collateral real energy (E3Si) to said controller device (13); D') real-time control of said emitting device (11) by said controlling device (13) during the irradiation process, taking into account the measurement of said actual collateral energy (E3Si), the measurement of said actual collateral energy (E3Si) being compared to the predetermined secondary energy threshold (E4Si) associated with at least one zone (Si) of said plurality of zones (SI, S2...Sn) which is adjacent to said target zone (C), such that: if said secondary energy threshold (E4Si) of said at least one zone (Si) adjacent to said target zone (C) is reached, the power and / or intensity of said energy radiations (R) irradiating said target zone (C) are modulated to reduce said collateral real energy (E3Si).

3. Method according to claim 1 or 2, wherein said target area (C) corresponds to the entire surface (S).

4. A method according to any one of claims 1 to 3, wherein said emitting device (11) is fixed and selected from an array comprising a plurality of independent emitting sources (111) and an emitting source associated with an optical galvanometer.

5. A method according to claim 4, wherein, when said emitting device (11) is an array comprising a plurality of independent emitting sources (111), said independent emitting sources (111) are LEDs.

6. A method according to any one of claims 1 to 3, wherein said emitting device (11) is mobile, such as a mobile source mounted on an axis.

7. A method according to any one of claims 1 to 6, wherein said measurement and analysis device (12) is a thermal and / or radiative imaging sensor, associated with an image analysis module.

8. A method according to any one of claims 1 to 7, wherein said control device (13) is a Human-Machine Interface.

9. A method according to any one of claims 1 to 8, wherein said energetic radiations (R) are selected from visible light, infrared, gamma, ultraviolet, laser, microwave, X-ray, and convective or conductive thermal deployment radiations.

10. System (1) for the controlled selective irradiation of a target area (C) of a surface (S) of a layer of material, such as a varnish layer or a layer of semiconductor material, said surface (S) being segmented into a plurality of areas (SI, S2, Si...Sn), said system (1) implementing the method according to any one of claims 1 to 9, comprising: - an emitting device (11), configured to irradiate said target area (C) with energetic radiation (R), - at least one measuring and analyzing device (12), configured to measure the actual energy (E1C) generated by the energetic radiation (R) at the level of said target area (C) and the actual col- lateral (E3Si) generated at the level of at least one zone (Si) of said plurality of zones (SI, S2.. .Sn) which is adjacent to said target zone (C), as well as to analyze the actual effect (A1C) obtained at the level of said irradiated target zone (C), - a controller device (13), configured to receive predetermined primary (E2S1, E2S2...E2Sn) and secondary (E4S1, E4S2, E4Si...E4Sn) energy thresholds respectively associated with each of said zones (SI, S2... .Sn) and a target effect (O) to be obtained, as well as to receive the measurement of said actual energy (E1C) and of said collateral actual energy (E3Si), as well as the analysis of said actual effect (A1C), said control device (13) comprising means for comparing said measurement of actual energy (E1C) to the predetermined primary energy threshold (E2C) associated with said target zone (C), of said measurement of collateral actual energy (E3Si) to the secondary predetermined energy threshold (E4Si) of at least one zone (Si) adjacent to said target zone (C), and of said analysis of the actual effect (A1C) to said target effect (O), said control device (13) being further configured to control said emitting device (11) in real time during the irradiation process by stopping the emission of said energetic radiation (R), and / or by modulating the power and / or intensity of said energetic radiation (R), and / or by selective modulation of the irradiated zones.

11. System according to claim 10, wherein said measuring and analyzing device (12) comprises: -at least one measurement and recording means (M) configured to measure said actual energy (E1C) generated by energetic radiation (R) at said target area (C) and said collateral actual energy (E3Si) at at least one area (Si) adjacent to said target area (C), and -at least one means of analysis and recording (A) configured to analyze said actual effect (A1C) obtained at said irradiated target area (C).

Images