Optoelectronic device and associated manufacturing method

Abstract

Title: Optoelectronic device and associated manufacturing method The invention essentially relates to an optoelectronic device 1 comprising: a stack 11 comprising: a plurality of light-emitting diodes 111 arranged at a distance from each other, and a plurality of electrically conductive pads 112 arranged between the diodes, a light confinement layer 12 extending over the stack and comprising reflective walls 121 defining between them spaces 10 located at right angles to each diode, the device being such that the confinement layer further comprises porous alumina 122 in at least one of said spaces 10, the porous alumina having, in at least one space, preferably in at least two of said spaces, or even in each space, among said at least certain spaces, at least two pores 1221 open on a first face 12a of the confinement layer which is located opposite the stack.Optical crosstalk phenomena are thus advantageously reduced. Figure for abstract: Fig.1.

Description

Title of the invention: Optoelectronic device and associated manufacturing method Technical field

[0001] The present invention relates to an optoelectronic device, in particular intended to equip a display screen or an image projection system. The present invention also relates to a method of manufacturing such an optoelectronic device. STATE OF THE ART

[0002] There are optoelectronic devices comprising a matrix of light-emitting diodes having an emitting surface coated at least in part with light color converters. Such optoelectronic devices can form display screens or image projection systems comprising a matrix of light pixels of different colors.

[0003] The light-emitting diodes may be formed from a semiconductor material comprising elements from column III and column V of the periodic table, such as an IILV compound, in particular gallium nitride (GaN), indium gallium nitride (InGaN) or aluminum gallium nitride (AlGaN). They are arranged so as to form a matrix of light-emitting diodes having an emission surface through which the light radiation emitted by the light-emitting diodes is transmitted.

[0004] In the case of a display screen or an image projection system, the optoelectronic device may thus comprise a matrix of luminous pixels, each luminous pixel comprising one or more light-emitting diodes. In order to obtain luminous pixels emitting lights of different colors, for example blue, green or red, the light-emitting diodes may be adapted to emit blue light, and certain luminous pixels may be associated with light color converters, such as photoluminescent pads, adapted to absorb the blue light emitted by the light-emitting diodes, and to emit, in response, green or red light. The photoluminescent pads are usually formed from a binder matrix, called below resin, comprising particles of a photoluminescent material such as yttrium aluminum garnet (YAG, for Yttrium Aluminum Garnet, in English) activated by the cerium ion YAG:Ce..

[0005] The emission of light-emitting diodes, and therefore of pixels, is more or less angularly directive and optical crosstalk phenomena can be generated between pixels or between diodes. electroluminescent. In addition, the use of light color converters, such as the photoluminescent pads introduced above, can accentuate these optical crosstalk phenomena.

[0006] To limit these phenomena, it has been proposed to optically isolate the pixels from each other, either by adding an absorbent matrix (or "black matrix" in English) between the pixels, or, more advantageously, by adding lateral mirrors, preferably made of aluminum or silver, on the sides of the photoluminescent pads. Methods for manufacturing said side mirrors are described in the patent documents referenced FR3101130 Al, FR3061358 Al, FR3083370 Al, FR3087580 Al and US2023 / 0033031 Al. More particularly, these references propose different techniques for manufacturing cavities above blue pixels to be able to fill them with a resin loaded with quantum dots (or QDs) for converting the blue light emitted by the pixels into green light or red light.However, these techniques require many technological steps (SiO2 deposition, lithography, metal deposition by atomic layer deposition (ALD), etching, disassembly, aligned transfer, etc.), making their integration complex. It is also known from the article by Siontas et al. entitled "Broadband visible-to-telecom wavelength germanium quantum dot photodetectors" and published in APPLIED PHYSICS LETTERS 113, 251901 (2018) a filling of the cavities using QDs suspended in a solvent which evaporates in a second step (drying) leaving only the QDs. More particularly, it is disclosed to deposit, in the cavities of a nanoporous alumina matrix, perovskite QDs based on CsPbBr3 diluted in dimethyl sulfoxide (or DMSO) as solvent, and to heat them in a second step to evaporate the dimethyl sulfoxide.

[0007] Furthermore, it is known, from the patent document referenced EP2708492 B1, a mesoporous layer comprising coupling aggregates of absorbers and light converters (or "J-aggregates" in English) and quantum dots (or boxes) making it possible to increase the energy transfer between fluorescent particles (or "Forster resonance energy transfer" or FRET in English) and therefore the emission rate of an assembly comprising such a mesoporous layer.

[0008] An objective of the present invention is to propose an optoelectronic device, in particular intended to equip a display screen or an improved image projection system, relative to existing optoelectronic devices, in particular by reducing optical crosstalk phenomena.

[0009] An objective of the present invention is to provide such a device having a better light conversion rate. Alternatively or in addition, a lens of the present invention is to provide such a device whose manufacturing process is simpler, or at least not more complex, than existing processes.

[0010] Another objective of the present invention is to propose an optoelectronic device and an associated manufacturing method which are of more immediate technological integration than the solutions of the prior art. SUMMARY

[0011] To achieve this objective, according to a first aspect of the invention, an optoelectronic device is provided comprising: a. a stack comprising: i. a plurality of PN junction light emitting diodes arranged at a distance from each other, and ii. a plurality of electrically conductive pads arranged between the light-emitting diodes, the electrically conductive pads being electrically insulated from at least one p or n zone of the PN junctions of the light-emitting diodes, b. a light confinement layer extending over the stack and comprising reflective walls defining or delimiting between them spaces or volumes each located in line with at least one, preferably each, light-emitting diode.

[0012] The optoelectronic device is essentially such that the light confinement layer further comprises porous alumina in at least some of said spaces, the porous alumina having, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least two pores open on a first face of the confinement layer which is located opposite the stack.

[0013] In order to take advantage of the optical scattering properties of (nano)porous alumina, the pores of the porous alumina preferably have transverse dimensions of between 1 and 500 nm and preferably between 50 and 400 nm. Still in order to take advantage of the optical scattering properties of the nanoporous alumina, as an alternative or in addition to the previous preference, the pores of the porous alumina preferably have a periodicity of between 200 and 700 nm. Thus, it is advantageous to have several pores above at least one, preferably above each, light-emitting diode, and therefore a fortiori per pixel, in order to maximize the optical properties of the optoelectronic device. Also, the size of the pores is preferably greater than the size of the color conversion particles that it is desired to slide inside, so as to be able to have at least one color conversion particle in each pore.

[0014] According to an example of the first aspect of the invention, the porous alumina has, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least eight pores open on the first face of the confinement layer which is located opposite the stack. This results in better extraction of the light emitted by the underlying light-emitting diode(s).

[0015] According to an example of the first aspect of the invention, alternative to the previous one, the porous alumina has, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least one pore every 2xX, where X represents the wavelength to be extracted and at least four pores per space (case pixel of Ipm).

[0016] According to an example of the first aspect of the invention, at least one, preferably each, open pore on the first face of the confinement layer which is located opposite the stack has a filling rate, in the light color conversion material, substantially equal to 30%. The color conversion rate is thus optimized. More particularly, compared to the state of the art which consists of an Al2O3 pore above an LED, the conversion rate obtained here is much better.

[0017] According to a second aspect of the invention, a method of manufacturing an optoelectronic device is provided, the method comprising the following steps: a. provide a stack comprising: i. a plurality of PN junction light emitting diodes arranged at a distance from each other, and ii. a plurality of electrically conductive pads arranged between the light-emitting diodes, the electrically conductive pads being electrically insulated from at least one p or n zone of the PN junctions of the light-emitting diodes, b. forming, on the stack, a light confinement layer comprising reflective walls defining or delimiting between them spaces or volumes each located in line with at least one, preferably each, light-emitting diode, by: i. depositing an aluminum-based layer on a main face of the stack by which the light-emitting diodes are configured to emit, then ii. anodization of the aluminum-based layer at least outside areas located at the right of the conductive pads of the stack.

[0018] The method is essentially such that the anodization is parameterized so that porous alumina is formed in at least some of said spaces, by having, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least two pores open on a first face of the confinement layer which is located opposite the stack.

[0019] According to a third aspect of the invention, a display screen or projection system for at least one image is provided comprising at least one optoelectronic device as introduced above.

[0020] It is thus advantageously possible to take advantage of the preferentially anisotropic nature of the anodization of aluminum. Indeed, the optoelectronic device can comprise a space filled with porous alumina above each light-emitting diode, and the porous alumina comprising pores having a high form factor, the confinement of the light by the confinement layer is thereby improved, in particular by increasing the diffusion in each pore of the light emitted by the underlying light-emitting diode, and thereby reducing the phenomena of optical crosstalk, beyond what the reflective walls alone allow, especially when the pores of the porous alumina are filled with a light color conversion material.

[0021] It will subsequently appear that the optoelectronic device as introduced above may be an intermediate product intended for the manufacture of a more advanced optoelectronic device. In this context, note that the porous alumina filling the space above each light-emitting diode has at least the advantage of easily allowing deep and anisotropic etching of this space.

[0022] By considering the optoelectronic device as introduced above as an intermediate product, it is still advantageously possible, thanks to this intermediate product, to manufacture optoelectronic devices which are further improved, or in an easier manner, relative to the existing ones. BRIEF DESCRIPTION OF THE FIGURES

[0023] The aims, objects, as well as the characteristics and advantages of the invention will emerge more clearly from the detailed description of an embodiment thereof which is illustrated by the following accompanying drawings in which:

[0024] [Fig. 1] [Fig. 1] represents a sectional view of a part of an optoelectronic device according to a first embodiment of the invention or an intermediate product making it possible to obtain an optoelectronic device according to the second embodiment represented in [Fig.2].

[0025] [Fig.2] [Fig.2] represents a sectional view of a part of a device optoelectronic according to a second embodiment of the invention.

[0026] [Fig.3] [Fig.3] represents a sectional view of a part of an optoelectronic device according to a third embodiment of the invention or an intermediate product making it possible to obtain an optoelectronic device according to the fourth embodiment represented in [Fig.4].

[0027] [Fig.4] [Fig.4] represents a sectional view of a part of a device optoelectronic according to a fourth embodiment of the invention.

[0028] [Fig.5] [Fig.5] represents a sectional view of a part of an optoelectronic device according to a variant of the first embodiment of the invention which is illustrated in [Fig.l].

[0029] [Fig.6] [Fig.6] represents a sectional view of a part of an optoelectronic device according to a variant of the second embodiment of the invention which is illustrated in [Fig.2].

[0030] [Fig.7] [Fig.7] represents a sectional view of a part of a device optoelectronic device according to a variant of the third embodiment of the invention which is illustrated in [Fig.3] or an intermediate product making it possible to obtain an optoelectronic device according to a variant of the fourth embodiment which is illustrated in [Fig.8].

[0031] [Fig.8] [Fig.8] represents a sectional view of a part of an optoelectronic device according to a variant of the third embodiment of the invention which is illustrated in [Fig.3].

[0032] [Fig.9] Figures 9 to 12 schematically illustrate steps of a mode of implementation implementing a method for manufacturing an optoelectronic device as illustrated in [Fig.l].

[0033] [Fig. 10]

[0034] [Fig.l 1]

[0035] [Fig. 12]

[0036] [Fig. 13] Figures 13 to 15 schematically illustrate steps of an embodiment of a method for manufacturing an optoelectronic device as illustrated in [Fig.5].

[0037] [Fig. 14]

[0038] [Fig. 15]

[0039] [Fig. 16] [Fig. 16] represents a sectional view of a part of an optoelectronic device according to a fifth embodiment of the invention.

[0040] [Fig. 17] [Fig. 17] represents a sectional view of a part of an optoelectronic device (where appropriate without the element referenced 2200) according to a first variant of the fifth embodiment of the invention which is illustrated in [Fig. 16]. [Fig. 17] may alternatively be seen as a step in a method of manufacturing the optoelectronic device as illustrated in [Fig. 18] from that illustrated in [Fig. 16],

[0041] [Fig. 18] [Fig. 18] represents a sectional view of a part of an optoelectronic device according to a variant of the fifth embodiment of the invention which is illustrated in [Fig. 16].

[0042] The drawings are given as examples and are not limiting of the invention. They constitute schematic representations of principle intended to facilitate the understanding of the invention and are not necessarily to the scale of practical applications. In particular, the thicknesses and other dimensions of the different layers and other elements illustrated are not necessarily representative of reality, and are not necessarily to scale. DETAILED DESCRIPTION

[0043] Before commencing a detailed review of embodiments of the invention, optional features of the first aspect of the invention which may optionally be used in combination or alternatively are set out below:

[0044] According to one example, each of the spaces is filled with the porous alumina.

[0045] According to one example, the pores of the porous alumina form channels opening on the first face of the confinement layer. The pores of the porous alumina thus have a significantly high form factor, so as to further increase the diffusion in each pore of the light emitted by the underlying light-emitting diode.

[0046] According to one example, the pores of the porous alumina form channels extending mainly in a direction perpendicular to the first surface of the confinement layer. The longitudinal dimensions of the pores are preferably greater than their transverse dimensions.

[0047] According to one example, at least some of the pores, preferably all the pores, have a dimension Lp in length, taken in projection in a direction perpendicular to the first face, strictly less than a thickness E12 of the confinement layer, and preferably less than 2 nm; there therefore remain a few nm of alumina or aluminum at the bottom of the pores. The confinement layer may have a thickness E12 of between 500 nm and 10 μm or more.

[0048] According to one example, the pores extend substantially to the stack, potentially without reaching it, but preferably reaching it so as not to lose optical efficiency. The risk of delamination of the confinement layer from the stack is mechanically limited because the stability of the structure can be ensured by the non-porous Al pillars above the contacts, while taking advantage of an even stronger form factor of the pores of the porous alumina.

[0049] According to one example, at least one pore, preferably each pore, has a form factor defined by transverse dimensions substantially between 40 nm and 800 nm, and / or a longitudinal dimension substantially between 500 nm and 10 pm or more, and preferably a longitudinal dimension substantially between 1 pm and 5 pm.

[0050] In addition or as an alternative, the open pores on the first face of the confinement layer may occupy a surface area substantially equal to 30% of the total surface area of ​​this confinement layer and / or the open pores above at least one light-emitting diode which are adjacent to each other may be spaced two by two apart, through their centers, by a distance substantially equal to a wavelength of the light emitted by the underlying light-emitting diode, this wavelength typically belonging to the blue light spectrum, for example between 380 and 450 nm. This takes advantage of the fact that the anodization of aluminum can be parameterized in a known and controlled manner to ensure that the pores formed have dimensions suitable for allowing their filling, in particular with different light color conversion materials.

[0051] According to one example, the stack further comprises: a. a supporting substrate, b. an array of emissive structures extending over the carrier substrate, the array of emissive structures comprising the plurality of light-emitting diodes extending over the carrier substrate via an interfacing (or bonding) layer and the plurality of electrically conductive pads extending either directly over the carrier substrate or via an electrically insulating wall. At least one, preferably each, emissive structure comprises at least one light-emitting diode and at least a portion of each of the adjacent electrically conductive pads, an electrically insulating wall optionally separating at least in part the light-emitting diode and each of the adjacent electrically conductive pads to avoid short-circuiting at least one p or n zone of the PN junctions of the light-emitting diodes.

[0052] According to one example, at least one, preferably each, emissive structure further comprises at least one electrical insulation wall or dielectric wall, where appropriate partial: a. between at least one electrically conductive pad and at least one adjacent light-emitting diode, and / or b. between at least one electrically conductive pad and the carrier substrate.

[0053] According to one example, at least one, preferably each, emissive structure further comprises dielectric walls including first dielectric walls extending between at least one, preferably each, conductive pad and the interfacing layer and second dielectric walls extending over at least a portion of the lateral sides of each conductive pad, the first and second dielectric walls preferably being joined together, such that each conductive pad is electrically insulated over a portion of its periphery.

[0054] According to one example, the carrier substrate comprises at least one application-specific integrated circuit (or ASIC) and at least one electrical connection pad between said integrated circuit and at least one, for example several, light-emitting diodes. In addition or as an alternative, the stack further comprises an electrode layer based on a conductive and transparent material, such as indium tin oxide (ITO), the electrode layer extending, where appropriate continuously, between on the one hand the pluralities of light-emitting diodes and electrically conductive pads and on the other hand the light confinement layer.

[0055] According to one example, at least one, potentially each, reflective wall is made of aluminum.

[0056] According to one example, at least a portion of an outer periphery, in particular lateral, of at least one, preferably of each, reflective wall is based on or is made of aluminum.

[0057] According to one example, at least one electrically conductive pad is based on aluminum, where appropriate said at least one electrically conductive pad and the reflective wall located at right angles to said at least one electrically conductive pad form a volume of homogeneous material (or "bulk" in English). The electrically conductive pads can thus advantageously be made from the same material as that from which the reflective walls are made, which simplifies the device and its manufacturing method, in particular by avoiding a technological step of deposition, for example by electrodeposition (or "electrodeposition" in English), of electrically conductive pads based on a metallic material other than aluminum, for example based on copper.

[0058] According to one example, at least one, potentially each, reflective wall is based on porous alumina and a reflective material located in the pores of the porous alumina.

[0059] According to one example, the optoelectronic device further comprises a light color conversion material located in the pores of the porous alumina located in line with at least one light-emitting diode, preferably in line with each light-emitting diode. Optical crosstalk phenomena are further advantageously reduced. In this example, the light color conversion material is grafted to the inner walls of pores. Thus, the surface / conversion particle interactions are strong and the filling of the pores with the particles is improved. In addition, grafting the conversion particles onto the inner walls of the pores allows the conversion particles to better resist flux, which potentially ensures better resistance to aging of the optoelectronic device.

[0060] According to one example, the light color conversion material is located in, and optionally filled with, at least one, for example at least some, preferably each, of the pores (or channels) formed by the porous alumina.

[0061] According to one example, the light confining layer is free of porous alumina in at least one, potentially in several, of said spaces.

[0062] According to the preceding example, at least one, preferably each, space free of porous alumina is filled with a light color conversion material. It is thus possible to design an optoelectronic device having different configurations of its confinement layer depending on the light-emitting diode considered or the group of light-emitting diodes considered, said group being able in particular to constitute a pixel. The proposed optoelectronic device therefore advantageously has modularity in this respect.

[0063] According to one example, the light color conversion material comprises at least one of: a. quantum dots, b. light absorber and converter coupling aggregates (or “J-aggregates” in English), c. phosphorescent (or fluorescent) nanoparticles, and d. perovskites, where appropriate dissolved in a solvent or incorporated in a resin. Advantageously, the various light color conversion materials usually used in the field of display screens and other image projection systems can be inserted into the pores of the porous alumina, and therefore can be used in the context of the present invention.

[0064] According to one example, the light color conversion material filling at least one, preferably each, porous alumina-free space comprises at least one selected from: a. quantum dots, and b. light absorber and converter coupling aggregates (or “J-aggregates” in English).

[0065] According to one example, the light-emitting diodes are configured to emit light of a first determined wavelength, for example the blue color, in a direction substantially perpendicular to the first face of the confinement layer.

[0066] Additionally or alternatively, the light color conversion material is capable of converting the light emitted at the first wavelength into light having a second wavelength different from the first, for example the first wavelength being located in the blue and the second wavelength being located in one of green and red.

[0067] It is understood that the optional characteristics set out above can each qualify, as an alternative to the first aspect of the invention as introduced above, an optoelectronic device comprising: a. a stack comprising: i. a plurality of light-emitting diodes arranged at a distance from each other, and ii. a plurality of electrically conductive pads arranged between the light-emitting diodes, b. a light confinement layer extending over the stack and comprising reflective walls defining or delimiting between them spaces or volumes each located at right angles to a light-emitting diode.

[0068] The following are optional features of the second aspect of the invention which may optionally be used in combination or alternatively:

[0069] According to one example, the aluminum-based layer is deposited so as to have a thickness substantially between 500 nm and 10 μm, preferably substantially between 1 and 6 μm.

[0070] According to one example, the step of anodizing the aluminum-based layer is configured so that the porous alumina forms channels opening through the open pores on the first face of the confinement layer, and preferably so that at least one channel, for example each channel, has transverse dimensions substantially between 40 nm and 800 nm, and / or a longitudinal dimension substantially between 500 nm and 10 μm, preferably substantially between 1 and 6 μm.

[0071] According to one example, the anodization step of the aluminum-based layer is configured so that at least some of the pores (or channels) have a dimension Lp in length, taken in projection along a direction perpendicular to the first face, strictly greater than half of a thickness E12 of the confinement layer.

[0072] According to one example, the step of anodizing the aluminum-based layer is configured so that at least some of the pores (or channels) have a dimension Lp in length, taken in projection in a direction perpendicular to the first face, at most equal to, and preferably strictly less than, for example 2 nm, a thickness of the aluminum-based layer. This limits the risk of delamination of the confinement layer from the stack.

[0073] According to one example, the method further comprises, following the deposition of the aluminum-based layer and before its anodization: a. depositing a mask on areas of the aluminum-based layer which are located substantially in line with the conductive pads of the stack, the mask having openings located in line with the light-emitting diodes, the anodization of the aluminum-based layer being carried out through the openings of the deposited mask. The mask may be based on silicon oxide or silicon nitride (SiN).

[0074] According to one example, the step of providing the stack comprises depositing, between the light-emitting diodes, aluminum to form at least a portion of the plurality of electrically conductive pads of the stack and this deposition step is extended to carry out the deposition of the aluminum-based layer. In this way, the formation of the electrically conductive pads and the formation of the aluminum layer can be implemented in the same technological step of aluminum deposition.

[0075] According to one example, the manufacturing method further comprises depositing a light color conversion material in the pores of the porous alumina, at least one, preferably some, for example each, of said spaces. According to this example, the conversion material and / or the inner walls of the pores are functionalized, before the deposition of the light color conversion material in the pores of the porous alumina, so as to obtain a grafting of one or the other, for example by surface -OH bonds, created where appropriate by treatment with alkaline chemistry or by dry plasma treatment or by adsorption of a ligand.

[0076] According to an example, alternative to the previous one, the manufacturing method comprises the removal, for example by etching, of the porous alumina at the level of at least one, for example some, of said spaces, and the filling of at least one of the spaces thus hollowed out with a light color conversion material. One thus benefits both from the known possibility of selectively etching the relatively porous alumina to aluminum and the anisotropic nature of aluminum anodization, to obtain reflective walls that are very flat and substantially perpendicular relative to the face of the stack through which the light-emitting diodes are configured to emit.

[0077] According to one example, the anodizing step comprises the anodizing of a portion of the aluminum-based layer which is located in line with at least one electrically conductive pad and the deposition of a reflective material in the pores of the porous alumina located in line with said at least one electrically conductive pad.

[0078] A layer, a wall, a pad or an element based on a material A is understood to mean a layer, a wall, a pad or an element comprising this material A and possibly other materials, respectively.

[0079] A parameter “substantially equal / greater / less than” a given value means that this parameter is equal / greater / less than the given value, plus or minus 20%, or even 10%, close to this value. A parameter “substantially between” two given values ​​means that this parameter is at least equal to the smallest given value, plus or minus 20%, or even 10%, close to this value, and at most equal to the largest given value, plus or minus 20%, or even 10%, close to this value.

[0080] It is specified that, in the context of the present invention, the terms "on", "surmounts", "overhangs", "covers", "underlies" and their equivalents do not necessarily mean "in contact with". Thus, for example, the transfer, application or deposition of a first layer on a second layer does not necessarily mean that the two layers are directly in contact with each other, but means that the first layer at least partially covers the second layer by being either directly in contact with it, or by being separated from it by at least one other layer or at least one other element.

[0081] An element is said to be “microscopic” when it has dimensions equal to or less than a few micrometers. Thus, a microLED, for example, has dimensions equal to or less than a few micrometers.

[0082] In the following description, the thicknesses of substrate, film or layer are generally measured in directions perpendicular to the main extension plane of the substrate, film or layer.

[0083] With reference to Figures 1 to 8 and 16 to 18, the first aspect of the invention relates to an optoelectronic device 1.

[0084] As illustrated by these figures, the optoelectronic device 1 according to the first aspect of the invention comprises a stack 11 and a light confinement layer 12. More particularly, each of these figures illustrates a sectional view of a part of an optoelectronic device 1 according to an embodiment of the first aspect of the invention.

[0085] The invention also relates, according to a second aspect, to a method of manufacturing an optoelectronic device 1 according to the first aspect of the invention. Steps of different modes of implementation of this method are illustrated in FIGS. 9 to 15.

[0086] A third aspect of the invention relates to a display screen or a system for projecting at least one image comprising at least one optoelectronic device 1 according to the first aspect of the invention. The third aspect of the invention is not illustrated in the figures, but it is deemed immediate for the person skilled in the art to know how the optoelectronic device 1 according to the first aspect of the invention is intended to integrate a display screen or an image projection system.

[0087] Stacking 11

[0088] [Fig. 9] illustrates an embodiment of the stack 11. It should be noted here that the illustration provided by [Fig. 9] is structurally simplified. However, it is deemed sufficient to illustrate the way in which the stack 11 is arranged relative to the other elements of each of the embodiments of the optoelectronic device 1. The person skilled in the art is deemed to know, by virtue of his general knowledge, at least one, or even several, of the complex structures that the stack 11 can take.

[0089] Particularly with reference to this [Fig.9], the stack 11 comprises a plurality of light-emitting diodes 111 and a plurality of electrically conductive pads 112. The light-emitting diodes 111 of the plurality are arranged at a distance from each other. The light-emitting diodes 111 of the plurality are preferably arranged on the same level of the optoelectronic device 1. The electrically conductive pads 112 of the plurality are arranged between the light-emitting diodes 111 and extend through a bonding layer 114 which interfaces the PN junction of each light-emitting diode 111 with an underlying substrate 113, preferably directly. The electrically conductive pads 112 are preferably arranged on the same level of the optoelectronic device 1. Preferably, each electrically conductive pad 112 is surrounded by light-emitting diodes 111, or vice versa.Each pad 112 and / or each light-emitting diode 111 is, for example, in the form of a substantially rectangular parallelepiped or that of a substantially straight cylinder. The light-emitting diodes 111 and the electrically conductive pads 112 may, for example, be arranged in a checkerboard pattern, without requiring the light-emitting diodes 111 and the electrically conductive pads 112 to have the same dimensions, in particular transverse dimensions; the figures also illustrate. equally non-limitingly, pads 112 having a width dimension different from that of the light-emitting diodes 111. Furthermore, note here that the electrically conductive pads 112 may be based on, or even made of, a conductive metal such as copper or aluminum.

[0090] Still referring to [Fig.9], each light-emitting diode 111 may be a light source for a sub-pixel. More particularly, each light-emitting diode 111 may comprise a first-type semiconductor layer 111a, a light-emitting layer 111b, also called an active layer, and a second-type semiconductor layer 111c, which are stacked in this order. The light-emitting layer 111b is sandwiched between the first-type semiconductor layer 111a and the second-type semiconductor layer 111c. For example, the first type semiconductor layer 11a is a P-type semiconductor, the second type semiconductor layer 11c is an N-type semiconductor, and the light-emitting layer 112 is preferably a multiple quantum well or MQW layer, but this description is not limited to this example.Alternatively, the first type semiconductor layer 111a may be an N-type semiconductor, and the second type semiconductor layer 111c may be a P-type semiconductor.

[0091] The light-emitting diodes 111 are typically adapted to emit blue light, that is to say radiation whose wavelength is in the range substantially from 430 nm to 480 nm.

[0092] More particularly, the stack 11 may further comprise: a. a carrier substrate 113, b. an interfacing layer 114 extending over the carrier substrate 113 between the electrically conductive pads 112, and c. an array of emissive structures 1112 extending, preferably directly, over the interfacing layer 114 between the electrically conductive pads 112.

[0093] The carrier substrate 113 may comprise at least one application-specific integrated circuit (ASIC). The carrier substrate 113 may comprise at least one electrical connection pad 115 between said integrated circuit and at least one, for example several, of the light-emitting diodes 111. The interface layer 114 extends between pairs of adjacent sets formed of the electrically conductive pads 112 and lateral dielectric walls 117 (described in more detail below). The interface layer 114 may consist of at least one layer of a metallic material and more typically of a stack of layers of metallic materials.

[0094] Each light-emitting diode 111 extends over the interfacing layer 114. Each electrical connection pad 115 can form a via 115 for electrical interconnection between the carrier substrate 113 and the light-emitting diode 111 overhanging it, by means of the interfacing layer 114. The vias 115 are preferably located in an upper oxide layer (not shown in the figures) of the carrier substrate 113.

[0095] The carrier substrate may for example be of CMOS type, and therefore, in this example, the vias 115 are preferably located above the last metal levels of the CMOS.

[0096] The interfacing layer 114 preferably constitutes a conductive bonding interface between the carrier substrate 113 and the matrix of emissive structures 1112. The interfacing layer 114 ensures electrical conduction between the ASIC (located in the carrier substrate 113) and each light-emitting diode 111 via the vias 115.

[0097] The matrix of emissive structures 1112 comprises at least the plurality of light-emitting diodes 111 and the plurality of electrically conductive pads 112. This matrix 1112 preferably forms a level of each of the embodiments of the optoelectronic device 1 according to the first aspect of the invention.

[0098] At least one, preferably each, emissive structure 1112 comprises at least one light-emitting diode 111 and at least a portion of each of the adjacent electrically conductive pads 112, at least partially electrically insulated from each other by the aforementioned dielectric wall 117.

[0099] The stack 11 may further comprise an electrode layer 116. The latter is preferably based on a material that is not only electrically conductive, but also transparent, at least to the wavelengths emitted by the light-emitting diodes 111 that it covers. The electrode layer 116 is thus adapted to allow at least a significant portion of the electromagnetic radiation emitted, or equivalently the light emitted, by the light-emitting diodes 111 to pass through. The electrode layer 116 extends, where appropriate continuously, between, on the one hand, the light confinement layer 12 which will be described below (see for example [Fig. 1]) and, on the other hand, the pluralities of light-emitting diodes 111 and electrically conductive pads 112.

[0100] The material forming the electrode layer 116 may be a transparent conductive material (TCM) which is a solid that does not absorb visible light (gap greater than 3 eV) and which has good electrical conductivity, indium-tin oxide (or ITO, acronym for Indium Tin Oxide), zinc oxide doped with aluminum or gallium, graphene, aluminum (preferably with a thickness substantially equal to 10 nm), aluminum-doped zinc oxide (AZO), or a combination of these materials. The thickness of the electrode layer 116 may be between 0.03 pm and 1 pm. It should be noted that the presence of an electrode layer 116 in the stack 11 is optional, in particular to the extent that a lateral electrical contact 1171 can be provided, which we will return to below.

[0101] At least one, preferably each, emissive structure 1112 may further comprise at least one electrical insulation wall or dielectric wall 117. Where appropriate, the dielectric wall 117 provides electrical insulation between the elements that it separates, and in particular: a. between at least one electrically conductive pad 112 and the carrier substrate 113, and more particularly between at least one electrically conductive pad 112 and each adjacent interfacing layer 114, and / or b. between at least one electrically conductive pad 112 and at least one, preferably each, adjacent light-emitting diode 111, to avoid short-circuiting at least one p or n zone of the PN junctions of the light-emitting diodes.

[0102] The electrical insulation provided by the dielectric wall 117 may be only partial, in particular since the optoelectronic device 1 does not comprise the aforementioned electrode layer 116. It is indeed at least preferable that, in this case, a lateral electrical contact 1171 (see for example [Fig. 15]) remains between one, or even each, electrically conductive pad 112 of the plurality and the second-type semiconductor layer 111c of at least one, preferably of each, of the adjacent light-emitting diodes 111.

[0103] More particularly, at least one, preferably each, emissive structure further comprises dielectric walls 117 including first dielectric walls 117a extending between at least one, preferably each, conductive pad 112 and the carrier substrate 113 and second dielectric walls 117b, called lateral walls, extending over at least a portion of the lateral sides of each conductive pad 112, the first and second dielectric walls 117a and 117b being preferably joined together, so that each conductive pad is electrically insulated over a portion of its periphery.

[0104] The light confinement layer 12

[0105] With reference to figures 1 to 8 and 18, the light confinement layer 12 extends over the stack 11. It comprises reflective walls 121. The latter are preferably located in line with the electrically conductive pads 112, and not in line with the light-emitting diodes 111, so as not to oppose the passage of the light emitted by the light-emitting diodes 111, and on the contrary so as to reflect the light emitted by the light-emitting diodes 111 and thus reduce optical crosstalk phenomena.

[0106] For example, at least one, potentially each, reflective wall 121 may be based on, or even made of, aluminum. Alternatively, it could be based on, or even made of, any material reflecting in particular the wavelengths emitted by the light-emitting diodes 111; it could for example be made of copper.Nevertheless, one of the advantages of the present invention is to reduce the number of technological steps necessary for the manufacture of an optoelectronic device relative to existing methods; however, as we will see below, one of the advantageous characteristics of certain embodiments of the invention consists of the presence of porous alumina 122 in the confinement layer 12, this alumina being generated on the stack 11 by local anodization of a prior deposit of aluminum on the stack 11, said deposit also being able to make it possible to form the reflective walls 121 outside the anodized zones of the confinement layer 12. It is envisaged that at least some of the reflective walls 121 are not entirely made of aluminum. According to one example, only a part of an outer periphery, in particular lateral, of at least one, preferably each, reflective wall 121 may be made of aluminum.Alternatively or additionally, and as illustrated in [Fig. 18], at least one, potentially each, reflective wall 121 may be based on porous alumina 1211 and a reflective or absorbent material 1212 located in the pores of the porous alumina 1211; this embodiment makes it possible to take advantage of the highly anisotropic nature of the anodization of aluminum into nanoporous alumina to obtain even more reflective and / or more absorbent walls 121, depending on the nature of the material filling the pores.

[0107] As illustrated in particular in [Fig.l], the reflective walls 121, whatever their constitution, define or delimit between them spaces 10, or equivalently volumes, each located in line with at least one light-emitting diode 111. More particularly, each space 10 may be located in line with a pixel comprising, where appropriate, several light-emitting diodes 111 or a sub-pixel comprising, for example, a single light-emitting diode 111. And the reflective walls 121 defining said space 10 extend in line with at least some, preferably each, of the electrically conductive pads 112 adjacent to said at least one light-emitting diode 111 in line with which the space 10 is located.

[0108] It is in at least some of the spaces 10, potentially in each of these spaces 10, that porous alumina 122 is formed.

[0109] The optoelectronic device 1 according to some of its different embodiments which are illustrated in FIGS. 1, 2, 5, 6, 17 and 18 is such that the light confinement layer 12 actually comprises porous alumina 122 in at least some of said spaces 10, the porous alumina 122 having, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least two pores 1221 open on a first face 12a of the confinement layer 12 which is located opposite the stack 11. Note that the embodiments which are illustrated in figures 1, 2, 5, 6, 17 and 18 constitute all or part of final products, as opposed to intermediate products.

[0110] The embodiments of the first aspect of the invention which are illustrated in Figures 3, 4, 7 and 8 may also be considered as final products and may not comprise porous alumina 122 in line with certain of said spaces 10. These embodiments are preferably manufactured from optoelectronic devices according to the first aspect of the invention such as those illustrated in Figures 1, 3, 7, and 17, as intermediate products, the porous alumina 122 of these intermediate products having the advantage of being easy to etch to remove it in whole or in part, locally or everywhere.

[0111] The pores 1221 of the porous alumina 122 located at the right of the spaces 10, whether they are those of the final products or of the aforementioned intermediate products, preferably have transverse dimensions of between 1 and 500 nm and preferably between 50 and 400 nm. As an alternative or in addition to the preceding preference, the pores 1221 of the porous alumina 122 preferably have a periodicity of between 200 and 700 nm. Furthermore, the size of the pores is preferably greater than the size of the color conversion particles that it is desired to slide inside, so as to be able to have at least one color conversion particle in each pore.The transverse dimension of the pores 1221 may therefore depend on the size of the particles of the light color conversion material which are intended to be introduced therein; the parameters of the anodization of the aluminum layer to form the porous alumina are preferably defined accordingly.

[0112] The porous alumina 122 located where appropriate in line with the electrically conductive pads 112 may have the same characteristics as those stated above to qualify the porous alumina 122 located in at least some of the spaces 10.

[0113] Different materials are capable of constituting said particles of the light color conversion material. For example: a. quantum dots, b. coupling aggregates of absorbers and light converters (or "J-aggregates" in English), c. phosphorescent (or fluorescent) nanoparticles, and d. perovskites, where appropriate dissolved in a solvent or incorporated in a resin, are envisaged as particles made of a light color conversion material. These particles may have characteristic sizes different from each other and the person skilled in the art is supposed to know how to parameterize the anodization by which the porous alumina 122 is formed to obtain open pores 1221 which allow at least one such particle to be introduced therein, preferably several such particles. It should be noted that the solvent in which said particles can be dissolved may only be present at the time of deposition of these particles in the pores 1221, because a subsequent drying step can advantageously make it possible to evaporate said solvent which is then no longer in the optoelectronic device 1 according to the first aspect of the invention.

[0114] The light color conversion material 123 is preferably grafted to the inner walls of pores 1221. The aforementioned solvent or resin may play an advantageous role in the formation of such grafts. But, more generally, the particles of the light color conversion material 123 and / or the inner walls of the pores 1221 may be functionalized, before, or even during, the deposition of the light color conversion material 123 in the pores 1221 of the porous alumina 122, so as to obtain a grafting of them to each other, for example by surface hydrogen bonds -OH, created where appropriate by treatment with alkaline chemistry or by treatment with dry plasma or by adsorption of a ligand.

[0115] At least one, preferably each, pore 1221 open on the first face 12a of the confinement layer 12 which is located opposite the stack 11 preferably has a filling rate, in the light color conversion material, substantially equal to 30%. Achieving such filling can be made easy by the aforementioned grafting.

[0116] The optoelectronic device 1

[0117] Layer 12 is called the light confinement layer because this is its main function, but, as we have seen above, it can also fulfill a color conversion function; also it could have been called, for at least some of the embodiments of the first aspect of the invention, which are notably illustrated in Figures 2, 4, 6, 8 and 18, "light confinement and conversion layer 12".

[0118] The light-emitting diodes 111 may be configured to emit light of a first determined wavelength, for example the color blue, in a direction substantially perpendicular to the first face 12a of the confinement layer 12.

[0119] Additionally or alternatively, the light color conversion material 123 may be capable of converting the light emitted at the first wavelength into light having a second wavelength different from the first, for example the first wavelength being in the blue range and the second wavelength being in one or the other of green and red. According to one embodiment, the green light thus converted is of a wavelength substantially in the range from 510 nm to 570 nm. According to one embodiment, the red light thus converted is of a wavelength substantially in the range from 600 nm to 720 nm.

[0120] As illustrated in Figures 1, 2, 5, 6 and 18, the pores 1221 of the porous alumina 122 form channels 122a opening onto the first face 12a of the confinement layer 12. The channels 122a preferably extend mainly in a direction perpendicular to the first surface 12a of the confinement layer 12; they may more particularly extend over a distance Lp, taken in projection in a direction perpendicular to the first face 12a, strictly greater than half of a thickness E12 of the confinement layer 12.More particularly, the pores 1221 may extend substantially up to the stack 11, preferably without reaching it (except in the presence of the aluminum pads above the conductive pads, these aluminum pads preventing delamination of the structure), so as to limit any risk of delamination, to present a maximized internal wall surface, and thus maximize the aforementioned grafting, and consequently the filling of the pores by the light color conversion material 123. Thus, at least one, preferably each, pore 1221 may have a form factor defined by transverse dimensions substantially between 40 nm and 800 nm, and / or a longitudinal dimension substantially between 500 nm and 10 pm, preferably substantially between 1 pm and 5 pm.

[0121] The combination of said at least two pores 1221, or even said at least eight pores 1221, or at least one pore every 2xX, where X represents the wavelength to be extracted and at least four pores per space (pixel case of Ipm), in line with the same light-emitting diode 111, and of a filling of the pores 1221 with a light color conversion material 123 makes it possible to achieve an increase in the conversion rate by synergy with the increase in the diffusion caused by the plurality of pores in line with the same light-emitting diode 111, while benefiting from a reduction in optical crosstalk phenomena by synergy with the reflective walls 121.

[0122] As already mentioned above, and as will be the case with the final products illustrated in Figures 3, 4 and 8, the light confining layer 12 may be free of porous alumina 122 in at least one, potentially in several, of said spaces 10, porous alumina 122 still being located in at least one of the spaces 10. Then, at least one, preferably each, space 10 free of porous alumina 122 can be left 'empty', as illustrated in [Fig.3], or, on the contrary, be advantageously filled with a light color conversion material 123, as illustrated in [Fig.4]. The light color conversion material 123 can in the latter case be chosen from those mentioned above to fill the pores 1221.

[0123] As seen above, at least one electrically conductive pad 112 and the reflective wall 121 located at right angles to said at least one electrically conductive pad may be based on, or even made of, aluminum; they may then together form a volume of homogeneous material (or "bulk" in English), in particular in the absence of the electrode layer 116, as illustrated in FIGS. 5, 6, 7 and 8. The electrically conductive pads 121 may thus advantageously be made of the same material as that from which the reflective walls 121 are made, which simplifies the device 1 and its manufacturing method, in particular by avoiding a technological step of deposition, for example by electrodeposition (or "electrodeposition" in English), of electrically conductive pads 121 based on a metallic material other than aluminum, for example based on copper.

[0124] Manufacturing process

[0125] Characteristics related to the implementation of the manufacturing method according to the second aspect of the invention of an embodiment of an optoelectronic device according to the first aspect of the invention have already been introduced above.

[0126] Nevertheless, note that the manufacturing method according to the second aspect of the invention comprises the following steps: a. providing a stack 11, for example as illustrated in [Fig.9], comprising: i. a plurality of PN junction light-emitting diodes 111 arranged at a distance from each other, and ii. a plurality of electrically conductive pads 112 arranged between the light-emitting diodes, the electrically conductive pads 112 being electrically insulated from at least one p or n zone of the PN junctions of the light-emitting diodes 111, to avoid a short circuit, b. forming, on the stack 11, a light confinement layer 12 comprising reflective walls 121 defining between them spaces 10 each located in line with a light-emitting diode 111, by depositing an aluminum-based layer 1000, 2000, as illustrated in the figures 10 and 13, on a main face 11a of the stack 11 by which the light-emitting diodes 111 are configured to emit, then c. anodizing the aluminum-based layer 1000, 2000 at least outside areas located at right angles to the conductive pads 112 of the stack 11, to obtain for example the structures illustrated in figures 11 and 12, and 14 and 15, respectively, the manufacturing method according to the second aspect of the invention being essentially such that the anodizing is, as already announced above, parameterized so that porous alumina 122 is formed in at least some of said spaces 10, by having, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces 10, at least two pores 1221 open on a first face 12a of the confinement layer 12 which is located opposite the stack 11.

[0127] A first implementation of the manufacturing method according to the second aspect of an embodiment of the optoelectronic device 1 according to the first aspect of the invention which is illustrated in [Fig.l] is described below by way of illustration with reference to Figures 10 to 12. There we observe respectively the deposition of the aluminum layer 1000 of thickness E12 on the stack 11, and more particularly on the electrode layer 116 of the stack 11, then the localized anodization, using masks 1100, of the zones of the aluminum layer 1000 which are located at the right of the light-emitting diodes 111, to arrive at an optoelectronic device such as illustrated in [Fig. 12], from which it is sufficient to remove the masks 1100 to obtain the optoelectronic device such as illustrated in [Fig.l].The pores 1221 thus formed can then be filled with a light color conversion material 123 as detailed above to obtain the optoelectronic device as illustrated in [Fig.2]. Note that the anodization is also done partly under the mask. Consequently, the size of the mask is preferably smaller than the dimension of the nanoporous cavity; the greater the thickness to be anodized, the more this effect will be present.

[0128] A second implementation of the manufacturing method according to the second aspect of the invention of an embodiment of the optoelectronic device 1 according to the first aspect of the invention which is illustrated in [Fig. 5] is described below for illustrative purposes with reference to FIGS. 13 to 15. There we observe respectively the deposition of the electrically conductive pads 112 between the light-emitting diodes 111 to finalize the stack 11, which is free of an electrode layer 116. Then, this deposition is extended to form the aluminum layer 2000 of thickness E12 on the stack 11, then the localized anodization, using masks 2100, of the zones of the aluminum layer 2000 which are located at the right of the light-emitting diodes 111, to achieve an optoelectronic device as illustrated in [Fig. 15], from which it is sufficient to remove the masks 2100 to obtain the optoelectronic device as illustrated in [Fig.5]. The pores 1221 thus formed can then be filled with a light color conversion material 123 as detailed above to obtain the optoelectronic device as illustrated in [Fig.6].

[0129] It should be noted, echoing what has already been described above, that the aforementioned anodization step may further comprise the anodization, preferably simultaneous, of a portion of the aluminum-based layer 1000, 2000 which is located in line with at least one electrically conductive pad 112. The manufacturing method according to this example may therefore further comprise the deposition of a reflective material 1212 (or absorbent) in the pores of the porous alumina 1211 located in line with said at least one electrically conductive pad 112.

[0130] The invention is not limited to the previously described embodiments or implementations and extends to all embodiments and implementations covered by the invention.

Claims

Claims

1. Optoelectronic device (1) comprising: • a stack (11) comprising: i. a plurality of PN junction light-emitting diodes (111) arranged at a distance from each other, and ii. a plurality of electrically conductive pads (112) arranged between the light-emitting diodes (111), the electrically conductive pads (112) being electrically insulated from at least one p or n zone of the PN junctions of the light-emitting diodes, and • a light confinement layer (12) extending over the stack (11) and comprising reflective walls (121) defining between them spaces (10) each located in line with at least one, preferably each, light-emitting diode (111), the optoelectronic device (1) being characterized in that the light confinement layer (12) further comprises porous alumina (122) in at least some of said spaces (10), the porous alumina (122) having,in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least two pores (1221) open on a first face (12a) of the confinement layer (12) which is located opposite the stack (11).,

2. Optoelectronic device (1) according to the preceding claim, in which the pores (1221) of the porous alumina (122) have transverse dimensions of between 1 and 500 nm and preferably between 50 and 400 nm.

3. Optoelectronic device (1) according to any one of the preceding claims, wherein the pores (1221) of the porous alumina (122) have a periodicity of between 200 and 700 nm.

4. Optoelectronic device (1) according to any one of the preceding claims, wherein the porous alumina (122) has, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces, at least eight pores (1221) open on the first face (12a) of the confinement layer (12) which is located opposite the stack.

5. Optoelectronic device (1) according to any one of the preceding claims, in which at least one, preferably each, pore (1221) open on the first face (12a) of the confinement layer (12) which is located opposite the stack (11) has a filling rate, in the light color conversion material, substantially equal to 30%.

6. Optoelectronic device (1) according to any one of the preceding claims, wherein the pores (1221) of the porous alumina (122) form channels (122a) opening onto the first face (12a) of the confinement layer (12).

7. An optoelectronic device (1) according to any preceding claim, wherein the pores (1221) of the porous alumina (122) form channels (122a) extending mainly in a direction perpendicular to the first surface (12a) of the confinement layer (12).

8. Optoelectronic device (1) according to any one of the preceding claims, in which at least some of the pores (1221) have a dimension Lp in length, taken in projection in a direction perpendicular to the first face (12a), at most equal to, and preferably strictly less than, for example 2 nm, a thickness of the aluminum-based layer.

9. An optoelectronic device (1) according to any preceding claim, wherein the pores (1221) extend substantially to the stack (11).

10. Optoelectronic device (1) according to any one of the preceding claims, wherein at least one pore (1221) has a form factor defined by transverse dimensions substantially between 40 nm and 800 nm, and / or a longitudinal dimension substantially between 500 nm and 10 pm, preferably substantially between 1 pm and 5 pm.

11. An optoelectronic device (1) according to any preceding claim, wherein the open pores (1221) on the first face of the confinement layer (12) occupy a surface area substantially equal to 30% of the total surface area of ​​this confinement layer and / or the open pores (1221) above at least one light-emitting diode (111) which are adjacent to each other are spaced two by two, by their centers, by a distance substantially equal to a wavelength of the light emitted by the underlying light-emitting diode (111), this wavelength typically belonging to the blue light spectrum, for example between 380 and 450 nm.

12. An optoelectronic device (1) according to any one of the preceding claims, wherein the stack (11) further comprises: • a carrier substrate (113) and • an array of emissive structures (1112) extending over the carrier substrate (113), the array of emissive structures (1112) comprising the plurality of light-emitting diodes (111) which extend over the carrier substrate (113) via an interfacing layer (114) and the plurality of electrically conductive pads which optionally extend over the carrier substrate (113) via an electrically insulating wall (117).

13. An optoelectronic device (1) according to any preceding claim, wherein at least one, potentially each, reflective wall (121) is aluminum-based.

14. Optoelectronic device (1) according to the preceding claim, in which at least one electrically conductive pad (112) is based on aluminum, where appropriate said at least one electrically conductive pad (112) and the reflective wall (121) located at right angles to said at least one electrically conductive pad (112) form a volume of homogeneous material.

15. An optoelectronic device (1) according to any preceding claim, wherein at least one, potentially each, reflective wall (121) is based on porous alumina (1211) and a reflective material (1212) located in the pores of the porous alumina (1211).

16. An optoelectronic device (1) according to any preceding claim, further comprising a light color conversion material (123) located in the pores (1221) porous alumina (122) located in line with at least one light-emitting diode (111), preferably in line with each light-emitting diode.

17. An optoelectronic device (1) according to the preceding claim, wherein the light color conversion material (123) is grafted to the inner walls of pores (1221).

18. Optoelectronic device (1) according to any one of the two preceding claims, wherein the light confining layer (12) is free of porous alumina (122) in at least one, potentially in several, of said spaces (10).

19. Optoelectronic device (1) according to the preceding claim, wherein at least one, preferably each, space (10) free of porous alumina (122) is filled with a light color conversion material (123).

20. Optoelectronic device (1) according to any one of the three preceding claims, wherein the light color conversion material (123) comprises at least one of: • quantum dots, • coupling aggregates of light absorbers and converters, • phosphorescent nanoparticles, and • perovskites, optionally dissolved in a solvent or incorporated in a resin.

21. A method of manufacturing an optoelectronic device (1) comprising the following steps: • providing a stack (11) comprising: i. a plurality of PN junction light-emitting diodes (111) arranged at a distance from each other, and ii. a plurality of electrically conductive pads (112) arranged between the light-emitting diodes, the electrically conductive pads being electrically insulated from at least one p or n zone of the PN junctions of the light-emitting diodes, • form, on the stack (11), a light confinement layer (12) comprising reflective walls (121) defining between them spaces (10) each located to the right of a light-emitting diode (111), by i. depositing an aluminum-based layer (1000, 2000) on a main face (11a) of the stack (11) by which the light-emitting diodes (111) are configured to emit, then ii. anodizing the aluminum-based layer (100 0, 2000) at least outside areas located to the right of the conductive pads (112) of the stack (H), • the anodization being configured so that porous alumina (122) is formed in at least some of said spaces (10), by having, in at least one space, preferably at least two spaces, or even in each space, among said at least some of said spaces (10), at least two pores (1221) open on a first face (12a) of the confinement layer (12) which is located opposite the stack (11).

22. Manufacturing method according to the preceding claim, wherein the step of anodizing the aluminum-based layer (1000, 2000) is configured so that the porous alumina (122) forms channels (122a) opening through the pores (1221) open on the first face (12a) of the confinement layer (12), and preferably so that at least one channel (122a), for example each channel, has transverse dimensions substantially between 40nm and 800nm, and / or a longitudinal dimension substantially between 500 nm and 10 pm, preferably substantially between 1 pm and 6 pm.

23. Manufacturing method according to any one of the two preceding claims, further comprising, following the deposition of the aluminum-based layer (1000, 2000) and before its anodization: • depositing a mask (1100, 2100) on areas of the aluminum-based layer which are located substantially in line with the conductive pads (112) of the stack (11) the mask e having openings located at the right of the light-emitting diodes (111), the anodization of the aluminum-based layer (1000, 2000) being carried out through the openings of the deposited mask (1100).

24. A manufacturing method according to any one of the three preceding claims, wherein the step of providing the stack (11) comprises depositing, between the light-emitting diodes (111), aluminum to form at least a portion of the plurality of electrically conductive pads (112) of the stack (11) and this deposition step is extended to effect deposition of the aluminum-based layer (1000, 2000).

25. A manufacturing method according to any one of the four preceding claims, further comprising depositing a light color conversion material (123) in the pores (1221) of the porous alumina (122), at least one of said spaces (10).

26. Manufacturing method according to the preceding claim, wherein the light color conversion material (123) and / or the inner walls of the pores (1221) are functionalized, before the deposition of the light color conversion material (123) in the pores (1221) of the porous alumina (122), so as to obtain a grafting of one to the other, for example by surface -OH bonds, created where appropriate by treatment with alkaline chemistry or by treatment with dry plasma or by adsorption of a ligand.

27. ​​A manufacturing method according to any one of claims 21 to 26, comprising removing, for example by etching, the porous alumina (122) at at least one, for example some, of said spaces (10), and filling at least one of the spaces (10) thus emptied with a light color conversion material (123).

28. A manufacturing method according to any one of claims 21 to 27, wherein the anodizing step comprises anodizing a portion of the aluminum-based layer (1000, 2000) which is located in line with at least one electrically conductive pad (112) and further comprising depositing a reflective material (1212) in the pores of the porous alumina (1211). 31 located to the right of said at least one electrically conductive pad (112).

29. Display screen or system for projecting at least one image comprising at least one optoelectronic device (1) according to any one of claims 1 to 20.

Images