Method for manufacturing a monolithic integrated circuit, for example based on gallium nitride, and corresponding integrated circuit
FR3168124A1Pending Publication Date: 2026-05-01STMICROELECTRONICS INT NV
Patent Information
- Authority / Receiving Office
- FR · FR
- Patent Type
- Applications
- Current Assignee / Owner
- STMICROELECTRONICS INT NV
- Filing Date
- 2024-10-31
- Publication Date
- 2026-05-01
Abstract
A method for manufacturing a monolithic integrated circuit, comprising the fabrication of functional blocks (BF1, BF2) within and above at least one broadband semiconductor material disposed on a silicon substrate, the fabrication of mutually separated interconnecting portions (BEOL1, BEOL2) above the functional blocks, the separation of the functional blocks, and the fabrication of an electrically conductive connection between the substrate and a contact area located on an upper face of the interconnecting portion associated with a functional block. The separation (C2) of the functional blocks and the fabrication (C1) of said electrically conductive connection are carried out after the fabrication of the mutually separated interconnecting portions. Figure for the abstract: Fig 5
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Citation Information
Patent Citations
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