INTERCONNECTION STRUCTURE WITH INTEGRATED CURRENT SENSOR

Abstract

A device for a power electronic module, capable of being manufactured by additive manufacturing, comprising: - a conductive bridge (20) for connecting a first electrode of a semiconductor electronic component (C1) and a conductive region (11), the conductive bridge (20) having an end portion (21) in contact with the first electrode and another end portion (22) in contact with the conductive region (11), as well as a suspended flat region (25) extending between the end portions (21, 22), - a conductive track (44) forming a winding (40) of a current sensor for detecting a current flowing through the conductive bridge (20), the conductive track being arranged around and / or opposite the suspended flat region (25) of the conductive bridge (20), the conductive track being at a distance from and separated from the flat region by means of at least one dielectric region (33). Figure for the abstract: 1

Description

Title of the invention: INTERCONNECTION STRUCTURE WITH INTEGRATED CURRENT SENSOR TECHNICAL FIELD AND PREVIOUS ART

[0001] The present invention relates to the field of power electronic systems and in particular to power electronic modules used to implement an electrical energy conversion circuit.

[0002] In power electronics, power modules are elementary parts of a power conversion circuit. Depending on their combinations, power modules can perform various electrical functions, such as a switching cell, a bidirectional current switch, an inverter, a rectifier bridge, a converter.

[0003] Among the strategies aimed at reducing the carbon footprint of the aeronautical sector, an effort is currently being made regarding the implementation of electric aircraft or aircraft using hybrid technologies.

[0004] In this context in particular, there is a need to produce high-performance, integrated, reliable and secure power electronic modules.

[0005] A power module is generally formed of one or more electronic components, typically switching elements, such as diodes or transistors, a substrate on which the component(s) is or are arranged, typically a metallized ceramic substrate, conductive connection areas and interconnection structures.

[0006] Conductive elements, for example in the form of connection bars, may also be provided to distribute current through the module and / or bias the component(s). A power module may also be equipped with a cooling system or structure and / or designed to promote heat dissipation.

[0007] It is also known to seek to integrate one or more sensors to monitor the operating parameters of the module, and in particular a current to, through, or delivered by the component. The aim is, in particular, to monitor the occurrence of overcurrents affecting the component(s) of a power module, in order to prevent its premature aging or even its destruction.

[0008] Moreover, many current detection methods exist, including those using a shunt resistor, those using a Hall effect or magnetoresistive sensor, those made with a "Flux gate" type sensor and those implemented with a Rogowski type sensor.

[0009] A simple solution for integrating a current sensor into a power module is to use a shunt resistor connected in series with the component. The voltage drop across the resistor is measured and converted into a current value. However, this solution has the disadvantage of introducing significant parasitic inductances, which must be considered in the operation of the power module.

[0010] Existing solutions involve integrating a magnetoresistive or Hall effect sensor into a power module to measure a load current. For example, power traces can be extended to provide sufficient space for a current sensor. However, extending these traces also adds parasitic inductances that can disrupt the module's operation.

[0011] It is known to integrate a Rogowski current sensor, this time on a printed circuit board (PCB), in order to detect the current of a converter arm. The large size of the sensor used makes its integration into a power module difficult.

[0012] As with the devices previously mentioned, the problem arises of integrating this type of sensor into a power module without having to extend the power traces and introduce additional parasitic inductances that are detrimental to operation.

[0013] An arrangement in which a current transformer is provided around each component of a circuit is known but poses space problems.

[0014] A Rogowski coil inserted into a power module to measure the current in a transistor's connecting wire is also known. The size of the coil of the sensor poses a problem here as well.

[0015] In general, there is a need to quickly measure an electric current in a power module, while limiting the size and impact on measurement performance. Description of the invention

[0016] An object of the present invention is to provide a device for a power electronic module, said device comprising:

[0017] - a conductive bridge for connecting a first electrode of a component semiconductor electronics of the module, in particular a switching element, and a conductive area, said conductive area being intended to be connected to a biasing element or to a portion of a circuit comprising at least one other component, said conductive bridge comprising an end portion intended to be made in contact with said first electrode and another end portion intended to be brought into contact with said conductive zone, as well as a suspended flat zone extending between said end portions,

[0018] - a conductive track forming a winding of a current sensor for detecting a current flowing through the conducting bridge, the conducting track being arranged around and / or opposite the suspended flat area of ​​the conducting bridge, the conducting track being at a distance and separated from said flat area of ​​the conducting bridge by means of at least one dielectric region, the winding being coupled to the conducting bridge so that when a current flows through the conducting bridge, a magnetic field is generated inducing a voltage across the winding.

[0019] Thus, instead of providing a winding around the component, this winding is integrated here in close proximity to and opposite a particular interconnection structure which serves as its support and which is connected to the component, this interconnection structure itself having a reduced footprint and being able to participate in thermal dissipation.

[0020] The component typically includes a second electrode which can be arranged on another conductive area resting on the same support as said conductive area, in particular an electrically insulating support such as a ceramic substrate. Said conductive areas are disjoint.

[0021] Advantageously, the dielectric region forms an encapsulation around the conductive bridge and extends against an upper face and a lower face of the suspended flat conductive area as well as against lateral sides of the flat area so as to form a closed insulating contour.

[0022] The device is particularly suited to a transistor-type component whose channel is made of a large-bandgap semiconductor material, in particular GaN or SiC.

[0023] Advantageously, the winding is flat. This further reduces the overall size of the sensor. The winding can extend, in particular, in a plane above the suspended flat area. Thus, the suspended flat area is positioned between the winding and said end portions.

[0024] Advantageously, the conductive track forming the coil has a first end terminal and a second end terminal that are flat and arranged in said upper plane. This also contributes to a reduced overall size of the sensor.

[0025] A device such as the one defined above can, in a particularly advantageous way, be produced by additive manufacturing. This facilitates the production of a small winding with a large number of turns, thus improving the sensor's sensitivity while limiting its size.

[0026] According to another aspect, the present invention relates to a power module comprising a device as defined above.

[0027] According to one embodiment, the component is a transistor of a transistor switching circuit whose respective gates are controlled by a control circuit, the control circuit may be provided with an integrator connected to the coil of the sensor to integrate a voltage across the terminals of this coil.

[0028] A power module as implemented according to the invention is particularly suited to power converters typically between 1 kW and 100 kW, especially when the conductor bridge and the winding are Ag-based.

[0029] According to another aspect, the present invention relates to a switching circuit having a power module and a device as defined above.

[0030] A particular embodiment relates to an electrical energy converter, in particular DC / DC and configured to perform energy adaptation between a DC electrical energy source and a DC load comprising a power electronic module having a device as defined above.

[0031] According to another aspect, the present invention relates to a method for manufacturing a device as defined above, in which the conductive bridge, the dielectric region, and the conductive track of the winding are formed on a substrate by additive manufacturing. Such a manufacturing technique makes it possible to produce a conductive bridge and a sensor structure with various geometries while reducing the overall size. It allows for the production of a winding with small turns and a high turn density, and makes it possible to combine measurement sensitivity with a small footprint.

[0032] The additive manufacturing technique used may in particular be an inkjet technique, and in particular using equipment capable of delivering both conductive ink and dielectric ink or from which a dielectric material can be formed.

[0033] Thus, according to a particular embodiment, the formation of the conductive bridge and the winding may include a repetition of step(s) consisting of: - To form one or more primary elements using conductive ink, - To form one or more secondary elements based on dielectric ink, - Exposing said one or more first elements to a first light radiation in a first range of wavelengths, in particular infrared, so as to transform said one or more first elements into one or more blocks of conductive material, - Expose said one or more second elements to a second light radiation in a second range of wavelengths, in particular ultraviolet, so as to transform said one or more second elements into one or more portions of dielectric material. Brief description of the drawings

[0034] The present invention will be better understood upon reading the description of the exemplary embodiments given, by way of illustration only and in no way limiting, with reference to the accompanying drawings in which:

[0035] [Fig-1] [Fig.2] are schematic 3D representations of a device for power electronic module and including a conductive bridge to ensure a connection between an electronic component and another element as well as a winding of a current sensor allowing to measure a current delivered at the input of the component or at the output of this component.

[0036] [Fig.3A] [Fig.3B] give different views of a variant of the device in which the winding is wound around the conducting bridge.

[0037] [Fig.4] is a schematic and cross-sectional representation of a power module comprising such a device.

[0038] [Fig.5] gives an example of a power circuit equipped with several devices according to the invention, each enabling a connection with a switching transistor and measuring a current to or from this transistor.

[0039] [Fig.6A] [Fig.6B] [Fig.6C] [Fig.6D] [Fig.6E] [Fig.6F] [Fig.6G][Fig.6H] ][Fig.6I] [Fig.6J] ][Fig.6K] illustrate an example of a process for manufacturing a device for a power module made by additive manufacturing.

[0040] Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the transition from one figure to another.

[0041] In addition, in the description below, terms which depend on the orientation of the structure such as "above", "below", "back", "front", "upper", "lower", apply considering that the structure is oriented in the manner illustrated in the figures.

[0042] The different parts represented in the figures are not necessarily shown on a uniform scale, in order to make the figures more legible.

[0043] DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

[0044] Figures 1 and 2 give 3-dimensional views and different viewing angles of a power module device implemented according to an embodiment of the present invention.

[0045] The device includes an interconnection structure for connecting a first electrode or terminal (not visible in Figures 1 and 2) of an electronic component Ci of a power electronic circuit, for example of a converter, to a conductive area 11, which can itself be connected to another element of the circuit, for example to a portion of the circuit delivering a bias potential or setting to a reference potential.

[0046] The electronic component Ci is typically a semiconductor switching element such as, for example, a transistor. Advantageously, the electronic component Ci is made of a wide-bandgap semiconductor. Thus, in the case of a transistor, this transistor can be, for example, a SiC MOSFET or a gallium nitride (GaN) transistor.

[0047] The interconnection structure includes a conductive bridge 20, typically made of a metallic material such as copper or silver. The conductive bridge 20 is formed by an end portion 22 disposed on and in contact with the conductive area 11 and another end portion 21 disposed on and in contact with the first electrode or terminal of the component Ci. This first electrode or terminal of the component Ci can be a drain or a source in the case where the electronic component Ci is a field-effect transistor, or an emitter or collector in the case where the electronic component Ci is a bipolar transistor.

[0048] A second electrode or terminal of component Ci is disposed here on a second conductive area 12, separate from the conductive area 11, and which may be located in the same horizontal plane as the conductive area 11. This second electrode or terminal of component Ci, distinct from the first, may be a source or a drain in the case where the electronic component Ci is a field-effect transistor, or a collector or an emitter in the case where the electronic component Ci is a bipolar transistor. Component Ci may be arranged so as to rest on the second conductive area 12.

[0049] The interconnection structure further comprises a conductive zone 25, which is suspended, which extends at a distance from the first conductive zone 11 and the second conductive zone 12 and which connects the end portions 21 and 22.

[0050] The suspended conductive zone 25 is in particular a flat-looking zone which typically extends parallel to the conductive zones 11, 12 and to a principal plane of a support (not shown but typically parallel to the plane [O; x; y] in Figures 1 and 2) of these conductive zones 11, 12.

[0051] The suspended conductive zone 25 has a thickness e25 (dimension measured parallel to the z-axis of an orthogonal frame [O; x; y; z] given in Figures 1 and 2) less than its width Wi5 (dimension measured parallel to the support and the x-axis of the orthogonal frame [O; x; y; z]).

[0052] According to a particular embodiment, the thickness e25 of the suspended conductive zone 25 is provided to be between 100 pm and 2 mm and the width W25 of this zone is between 1 mm and 10 mm.

[0053] Such a conductive bridge 20 has the advantage of being more rigid and more robust than a conventional connection structure using conductive wiring.

[0054] Such a conductive bridge 20 can, by its shape, participate in the extraction of heat from the upper side of the component Ci and allow the thermal resistance of the assembly to be reduced.

[0055] Due to its flat shape, the upper surface 25a of the conducting bridge 20 can also serve as a reception area for another element on the conducting bridge 20 and in this example in particular for a current sensor structure.

[0056] The suspended conductive area 25 is here coated with a dielectric region 33 (not shown in [Fig.2] for the sake of simplification) and a conductive track of the current sensor, here in particular a Rogowski type sensor.

[0057] The conductive track of the current sensor forms a coil 40 arranged above and at a distance from the flat area 25. The thickness e30 of the dielectric region 33 between the conductive bridge 20 and the coil 40 and the dielectric material(s) of the dielectric region 33 are chosen so as to allow coupling between the conductive bridge 20 and the coil 40. The dielectric region 33 can, for example, be epoxy-based with a thickness e30 between the conductive bridge 20 and the coil 40, advantageously between 50 µm and 1 mm.

[0058] This coupling is such that when a current flows through the conductive bridge 20, it generates a magnetic field. This magnetic field induces an electromotive force in the winding 40, and an induced voltage is proportional to the derivative of the current with respect to time. This induced voltage is established between two terminals 46, 48 at the end of the winding 40, which are advantageously generally flat or planar in shape. Such a voltage can then be integrated by an electronic circuit (not shown) connected to the terminals 46, 48.

[0059] In the particular embodiment illustrated in Figures 1 and 2, the conductive track 44 forming the winding 40 and the end terminals 46, 48 extend mainly in a horizontal plane (i.e., a plane parallel to the plane [O; x; y]) parallel to that in which the flat area 25 extends. In this case, the overall size of the current sensor structure is minimized.

[0060] In the particular embodiment illustrated in Figures 1 and 2, the dielectric region 33 which extends between the winding 40 of the current sensor and the interconnecting conductive bridge 20 also advantageously extends against the sides of the conductive bridge 20 and under the suspended conductive area 25, in order to achieve insulating encapsulation.

[0061] In the particular embodiment illustrated in Figures 1 and 2, the current sensor winding 40 extends above the interconnecting conductor bridge 20 but Alternatively, it may be planned to arrange the winding 40 of the current sensor under the conductive bridge 20 and opposite the suspended conductive area 25.

[0062] In the particular embodiment illustrated in Figures 1 and 2, the suspended and flat conductive area 25 of the conductive bridge 20 has a parallelepiped shape, but other shapes can be considered to realize such a conductive platform.

[0063] Another example of an embodiment of a device as described above is shown in Figures 3A-3B, which respectively provide a schematic perspective view of the interconnection structure and the current sensor, as well as a cross-sectional view of these elements. This time, a winding 40 is provided, formed by a conductive track wound around the suspended conductive area 25 of the conductive bridge. The contact terminals 46, 48, which allow the image voltage of the derivative of the detected current to be recovered, are this time arranged on either side of the conductive winding forming the coil 40.

[0064] A device such as the one described above is typically integrated into a power module. Thus, in [Fig. 4] a power module with a device such as the one described above, in connection with Figures 1 and 2, is shown. The conductive bridge 20 allows an electrode of a component Ci to be interconnected with another element connected to the conductive area 11, while a current sensor structure with a winding 40 is arranged opposite the conductive bridge 20 and allows the measurement of a current delivered by or entering component Ci, and possibly the detection of overcurrents.

[0065] The conductive areas 11,12 are here connection areas, for example in copper, resting on a top face of a substrate 51, which may be in an electrically insulating material and having good high thermal conductivity, for example a ceramic or pre-impregnated material or a material such as is commonly used in a PCB substrate.

[0066] A lower face of the substrate 51 opposite said upper face is coated with a conductive area 53, for example of copper, itself arranged on a base plate, for example of metal, which serves as structural and thermal support for the module.

[0067] The conductive bridge 20 allows for a more rigid interconnection than a conventional wiring wire and also for heat extraction from the upper side of the electronic component Cp. The winding 40 of the current sensor is here arranged as close as possible to the conductive bridge 20 and so as to achieve a gain in compactness without disturbing the operation of the power circuit in which the component Ci is integrated.

[0068] Either of the examples of devices described above can be formed by means of an additive manufacturing technique, in other words 3D printing in which the conductive bridge 25, the dielectric region 33 and the winding 40 of the current sensor are formed by additive manufacturing, in other words by 3D printing.

[0069] A bi-material printing technique, particularly inkjet printing, using a combination or succession of conductive and dielectric ink jets can be advantageously employed. This minimizes the number of steps required to produce the interconnection and sensor structures.

[0070] The use of such a technique also provides significant flexibility regarding the geometry that can be given to the assembly and in particular to the winding 40. It also makes it possible to provide a conductive track of winding 40 of width W40 (dimension measured parallel to the x axis of the orthogonal frame [O; x; y; z]), in particular of small width, for example between 1 mm and 10 mm and thus to have a winding 40 with a high turn density, which promotes better sensitivity of the current sensor.

[0071] A device or module as described above can be integrated into an IPM power module, (i.e. "Intelligent Power Module"), which combines in particular a power converter formed of switching transistors and an integrated control circuit enabling in particular the control of the respective gates of the switching transistors.

[0072] A particular embodiment of a specific energy conversion circuit, the arms of which each integrate a device 7n 7i 2721 ,722„.„7k i ,7k2 as described previously in connection with Figures 1, 2, or 3A-3B, is given in [Fig. 5]. Each device 7n,7 Y1J22,...7U?k2 is equipped with a connecting bridge here connected to a transistor Tu Ti2T2i,T22„„ Tki Tk2 and a current sensor structure. Some devices 7n 72[ 722>...7k2 make a connection between a high VDC supply line and a transistor Ti i puT2i or Tkb, while other devices 7i 2 722> 7k2 make a connection between a low supply line or ground GND and a transistor

[0073] A control integrated circuit 152 is configured to drive the transistors Tu, Ti2, T2i, T22, Tki, Tk2 and in particular their gate electrode in order to allow their changes of state, such as the transition from the open state to the closed state or from the closed state to the open state, as well as to allow their maintenance in an open or closed state, and to control their opening, i.e. their transition to a blocked state, in the event of detection of an overcurrent.

[0074] Thus, the control integrated circuit 152 is configured to analyze the signal delivered by each current sensor and to detect the occurrence of an overcurrent affecting the transistor Tu Ti2T2i T22j...TkiTk2 from such an analysis.

[0075] The output signal can, in particular, be a voltage recovered across terminals 46, 48 of the current sensor winding 40. This voltage represents the derivative of the current flowing through the bridge 40 and is transmitted to the control integrated circuit 152. This control circuit 152 can be equipped with an integrator and configured to integrate the voltage delivered by each of the sensors.

[0076] An example of an additive manufacturing process by 3D printing, of a device such as described above, and in which a conductive bridge structure and a current sensor winding are formed separated by a dielectric region, will now be given in connection with Figures 6A-6K.

[0077] On a starting substrate 601, here temporary, for example made of polyimide such as Kapton® or a preferably non-adhesive polymer, a material is deposited, having a metallic constituent or containing a metallic species and capable of being transformed into a conductive material by exposure to light radiation or, more generally, whose electrical conductivity is capable of being increased following exposure to light radiation. This transformation can, in particular, be carried out by sintering. The deposited material is typically in the form of a liquid such as a conductive ink 603 containing metallic particles or charges, for example silver-based ([Fig. 6A]). In this example, the ink 603 is not deposited over the entire substrate 601; in other words, it is not deposited "over the entire plate" but is applied locally to certain areas of the substrate 601.Conductive elements 605a and 605b are thus produced, intended to form end sections of a conductive bridge. Elements with a minimum width on the order of ten or twenty micrometers, for example 18 µm, and a minimum thickness on the order of, for example, 1 µm can be provided.

[0078] A material having a dielectric constituent or comprising a precursor of dielectric material and capable of being transformed into a dielectric material by exposure to light radiation is also deposited on the support 601 ([Fig. 6B]). This material may, in particular, be polymerization. The deposited material may be in the form of a liquid, such as a so-called "dielectric" ink 607, and may, for example, be based on a dielectric polymer, for example, an epoxy polymer. Elements 609a, 609b, and 609c are thus defined for forming at least one dielectric region. Elements with a minimum width on the order of ten or twenty micrometers, for example, 18 µm, and a minimum thickness on the order of, for example, 1 µm, may be provided.

[0079] The deposition of inks 603, 607 can be carried out using ink distribution devices belonging to the same equipment. Advantageously, a 3D printer, equipped with one or more light sources, is used as the ink deposition and transformation equipment.

[0080] Figure 6C shows the exposure of conductive ink 603 to infrared (RI) light radiation belonging to a first range of wavelengths. Typically, the light source, for example a lamp, emits in the infrared range. The power, exposure time, and focal length are adjusted according to the dimensions of the elements 605a, 605b that are to be transformed into a conductive material, for example, silver. For example, the exposure time can be on the order of one or more seconds. The transformation can include sintering, in which the metallic particles, for example silver, are heated to agglomerate them.

[0081] Figure 6D shows the exposure of the dielectric ink 607 to light radiation R2 belonging to a second wavelength range, distinct from the first range. Typically, the radiation source R2, for example a lamp, emits in the ultraviolet range. The power, exposure time, and focal length are adjusted according to the dimensions of the elements 609a, 609b, 609c that are to be transformed into a dielectric material, for example, an epoxy polymer. For example, the exposure time can be on the order of one or more seconds. The transformation of the dielectric ink 607 may include polymerization.

[0082] A first Ni level of conductive elements 605a, 605b and dielectric elements 609a, 609b, 609c is thus formed.

[0083] Such steps are then typically repeated to form additional levels of conductive element(s) and dielectric element(s).

[0084] Thus ([Fig.6E]), the conductive ink 603 is deposited again to form at least one conductive element 615 intended to form the suspended flat area of ​​the conductive bridge 620.

[0085] On [Fig.6F], the dielectric ink 607 is deposited again to form dielectric elements 619a, 619b around the conductive element 615 and thus achieve encapsulation around the suspended flat area of ​​the conductive bridge 620. The exposures to infrared RI radiation ([Fig.6G]) and to ultraviolet R2 radiation ([Fig.6H]) are also repeated.

[0086] In subsequent steps, the dielectric ink 607 is deposited again and this ink 607 is exposed to UV light R2 radiation to form, at a higher level, a dielectric element 629 ([Fig. 61]) intended to form a region of separation between the 620 conductive bridge and a winding of a current sensor structure.

[0087] Next ([Fig.6J]), in a higher level, the conductive ink 603 and the dielectric ink 607 are deposited and exposed respectively to RI radiation, typically IR, and to R2 radiation, typically UV, in order to produce on the one hand at least one conductive element intended to form the winding 640 of the current sensor and its connection terminals and on the other hand dielectric encapsulation elements 639a, 639b around this winding 640.

[0088] The temporary support 601 can then be removed or detached ([Fig. 6K]), for example by peeling it off. This preserves a structure formed by the conductive bridge 620 and the current sensor winding 640 separated by a dielectric region 633.

[0089] The structure 650 thus formed can then be assembled, for example by brazing on conductive areas of a substrate or on a conductive area of ​​a substrate and a terminal or electrode of a component resting on this substrate.

[0090] As an alternative to the embodiment just described, the order of one or more steps can be reversed. Thus, for each layer formed, the dielectric ink 607 can be deposited before the conductive ink 603, and exposure to UV radiation can be carried out before exposure to IR radiation.

[0091] As an alternative to the embodiment examples just given, a simultaneous deposition of the conductive and dielectric inks 603, 607 can be provided.

[0092] In either of the embodiments described above, the formation of the conductive elements and dielectric regions can be carried out by means of a 3D printer whose material dispensing device(s), in particular ink, is or are controlled by means of a digital file typically generated using a computer-aided design tool for electronic circuits.

[0093] A digital 3D model of the structure is created beforehand using CAD (Computer-Aided Design) software. The digital model is prepared for printing, sliced ​​into successive layers each corresponding to a level NI, ..., Nk, and translated into specific instructions for the printer.

[0094] As an alternative to a manufacturing process as described above, instead of carrying out the conductive bridge and current sensor structure on a temporary support, the process described above can be carried out directly on the substrate where the conductive areas 11, 12 and the electronic component Ci described above are located.

Claims

Demands

1. Device for a power electronic module, said device comprising: - a conductive bridge (20) for connecting a first electrode of a semiconductor electronic component (Ic) and a conductive area (11), said conductive area (11) being intended to be connected to a biasing element (VDC; GND) of said component or to a portion of a circuit comprising at least one other component, said conductive bridge (20) comprising an end portion (21) intended to be disposed in contact with said first electrode and another end portion (22) intended to be disposed in contact with said conductive area (11), as well as a suspended flat area (25) extending between said end portions (21, 22), - a conductive track (44) forming a winding (40) of a current sensor for detecting a current flowing through the conductive bridge (20),the conductive track being arranged around and / or opposite the suspended flat area (25) of the conductive bridge (20), the conductive track being at a distance and separated from said flat area of ​​the conductive bridge by means of at least one dielectric region (33), the winding (40) being coupled to the conductive bridge such that when a current flows through the conductive bridge, a magnetic field is generated inducing a voltage across the winding.

2. Device according to claim 1, further comprising an electrically insulating support (51) such as a ceramic substrate, and another conductive area (12) intended to be connected to a second electrode of said component (Cl), said conductive areas (11, 12) being disjoint and resting on said support (51).

3. Device according to any one of claims 1 or 2, wherein the dielectric region (33) forms an encapsulation around the conductive bridge (25), said dielectric region (33) extending against an upper face (25a) and a lower face of the suspended flat conductive zone (25) as well as against lateral flanks of the flat zone so as to form a closed insulating contour.

4. A device according to any one of the preceding claims, wherein the winding (40) extends in a plane above the suspended flat area (25), such that the suspended flat area (25) is arranged between the winding (40) and said end portions (21, 22) and in which conductive track (44) forming the winding comprises a first end terminal (46) and a second end terminal (48), said end terminals (46, 48) being generally planar in shape and arranged in said plane.

5. Power module comprising a device according to any one of the preceding claims, and said component (Cl), wherein the component is a transistor of a transistor switching circuit whose respective gates are driven by a control circuit, said control circuit comprising an integrator connected to said winding (40) for integrating a voltage across said winding.

6. Power module comprising a device according to any one of claims 1 to 4, wherein said component (Ci) is a transistor whose channel is formed of a wide-bandgap semiconductor material, in particular GaN or SiC.

7. Electrical power converter, in particular DC / DC configured to perform power adaptation between a DC electrical power source and a DC load, comprising a module according to one of claims 5 or 6.

8. Method of making a device according to any one of claims 1 to 4, wherein the conductive bridge (25), the dielectric region (33) and the conductive track (44) of the winding (40) are formed on a support by additive manufacturing, in particular by inkjet printing.

9. A method according to claim 8, wherein the formation of the conductive bridge (25) of the dielectric region (33) and of the winding (40) comprises a repetition of deposition step(s) on said support and consisting of: - Forming one or more first elements (605a, 605b; 615; 635) based on a conductive ink (603), - Forming one or more second elements (609a, 609b, 609c; 619a, 619b; 629) based on dielectric ink (607), - Exposing said one or more first elements (605a, 605b; 615; 635) to a first light radiation in a first range of wavelengths, in particular infrared, so as to transform said one or more first elements into one or more blocks of conductive material of the winding or the conductive bridge, - Expose said one or more second elements (609a, 609b, 609c; 619a, 619b; 629) to a second light radiation in a second range of wavelengths, in particular ultraviolet, so as to transform said one or more second elements into one or more portions of dielectric material.

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