METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE AND AN INTERMEDIATE MULTILAYER STRUCTURE

Abstract

METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE AND INTERMEDIATE MULTILAYER STRUCTURE One aspect of the invention relates to a method for manufacturing a multilayer structure (1), comprising the following steps: providing a temporary substrate (2) formed of a first material and comprising a first face (2a), a second face (2b) and a lateral surface (2c); depositing on the temporary substrate (2) a semiconductor support layer (11) formed of a second material different from the first material, the semiconductor support layer (11) comprising a first portion (111) disposed on the first face (2a) of the temporary substrate (2) and a second portion (112) located at the periphery of the first portion (111) and at the periphery of the temporary substrate (2); transferring a useful semiconductor layer (12) onto the first portion (111) of the semiconductor support layer (11);form (S4) a groove (3) extending into the semiconductor support layer (11) and into the temporary substrate (2), so as to separate the first portion (111) and the second portion (112) of the semiconductor support layer (11) or to separate a first part of the second portion (112) adjacent to the first portion (111) and a second part of the second portion (112) extending over the lateral surface (2c) of the temporary substrate (2); and remove the temporary substrate (2), so as to detach the second portion (112) or the second part of the second portion (112). Figure to be published with the abbreviation: Figure 1D;