Substrate Processing Equipment

Abstract

The present invention relates to a substrate processing apparatus including a support part for supporting a substrate, a lead arranged spaced upward from the support part, a first injection part coupled to the lead and injecting a first gas into a first region, a second injection part coupled to the lead and injecting a second gas into a second region, a purge part coupled to the lead and injecting a purge gas into a third region arranged between the first region and the second region, and a rotation part for rotating the support part.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for performing processing steps such as a deposition step and an etching step on a substrate. [Background technology]

[0002] Generally, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes such as a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film at the selectively exposed portions to form a pattern are performed. These substrate processing processes are performed by a substrate processing apparatus.

[0003] A substrate processing apparatus according to the prior art includes a substrate support part that supports a substrate, a rotation part that continuously rotates the substrate support part around a rotation axis, a first injection part that injects a first gas toward a first injection space on the substrate support part, and a second injection part that injects a second gas toward a second injection space on the substrate support part.

[0004] While the first injection unit injects a first gas into the first injection space and the second injection unit injects a second gas into the second injection space, the rotation unit continuously rotates the substrate support unit so that the substrate passes through the first injection space and the second injection space in a repeated sequence. As a result, an adsorption process in which the first gas is adsorbed onto the substrate in the first injection space is performed, and then a deposition process in which the first gas adsorbed onto the substrate in the second injection space reacts with the second gas injected by the second injection unit to deposit a thin film is performed. As a result, a thin film is deposited on the substrate by atomic layer deposition (ALD).

[0005] Here, in the conventional substrate processing apparatus, the rotation unit continuously rotates the substrate support unit, so that the chucking process is performed while the substrate is rotating.

[0006] As a result, in the substrate processing apparatus according to the conventional technology, the adsorption process cannot be performed correctly in the first injection space due to centrifugal force acting as a result of the substrate being continuously rotated.

[0007] Therefore, in the conventional substrate processing apparatus, the first gas that is not adsorbed to the substrate in the second injection space reacts with the second gas injected by the second injection part above the substrate, resulting in a problem that a thin film is deposited on the substrate by chemical vapor deposition (CVD), resulting in degradation of the film quality of the thin film deposited on the substrate. Summary of the Invention [Problem to be solved by the invention]

[0008] The present invention has been devised to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus capable of preventing deterioration of the film quality of a thin film deposited on a substrate. [Means for solving the problem]

[0009] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0010] The substrate processing apparatus according to the present invention includes a support portion for supporting a substrate, and a lid , the above lid a first injection part coupled to the first region and injecting a first gas into the first region; lid a second injection part coupled to the second region and injecting a second gas into the second region; lidThe gas supply system may include a purge unit coupled to the support unit and configured to inject a purge gas into a third region disposed between the first region and the second region, and a rotation unit configured to rotate the support unit. The rotation unit rotates the support unit so that the substrate moves between the first region and the second region, and may stop the support unit while a processing step using a first gas is performed in the first region and a processing step using a second gas is performed in the second region. The lower surface of the first injection unit may be disposed such that it is spaced apart from the support unit by a shorter distance than a lower surface of the second injection unit is spaced apart from the support unit. Effect of the Invention

[0011] According to the present invention, the following effects can be achieved.

[0012] The present invention is embodied in such a way that the substrate can be moved between a first region and a second region by rotating the support, and a process using a first gas and a process using a second gas are performed in a state where the rotation of the support is stopped. Therefore, the present invention can improve the stability of a process for depositing a thin film by atomic layer deposition (ALD) and improve the film quality of the thin film. [Brief description of the drawings]

[0013] [Figure 1] 1 is a schematic exploded perspective view of a substrate processing apparatus according to the present invention; [Diagram 2] 2 is a schematic cross-sectional side view of the substrate processing apparatus according to the present invention taken along line II in FIG. 1; [Diagram 3] FIG. 2 is a schematic plan view of a support unit in the substrate processing apparatus according to the present invention. [Figure 4] FIG. 4 is a schematic plan view of a lid in the substrate processing apparatus according to the present invention. [Diagram 5] 2 is a schematic side cross-sectional view of an embodiment of a first ejection unit and a second ejection unit in the substrate processing apparatus according to the present invention, taken along line II in FIG. 1; FIG. [Figure 6]2 is a schematic cross-sectional side view of an embodiment of a spray module in a substrate processing apparatus according to the present invention; FIG. [Figure 7] 2 is a schematic cross-sectional side view of an embodiment of a spray module in a substrate processing apparatus according to the present invention; FIG. [Figure 8] 2 is a schematic cross-sectional plan view of a purge unit in the substrate processing apparatus according to the present invention, taken along line II-II in FIG. 1; [Figure 9] 2 is a schematic side cross-sectional view of an embodiment of a substrate processing apparatus according to the present invention, in which a purge unit is arranged, taken along line II in FIG. 1; FIG. [Figure 10] FIG. 2 is a schematic plan view of a support unit in the substrate processing apparatus according to the present invention. [Figure 11] FIG. 2 is a schematic plan view of a support unit in the substrate processing apparatus according to the present invention. [Figure 12] FIG. 2 is a schematic plan view of a support unit in the substrate processing apparatus according to the present invention. [Figure 13] 13 is a schematic side cross-sectional view of a supporting portion in the substrate processing apparatus according to the present invention, taken along line III-III in FIG. 12. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0015] 1 and 2, a substrate processing apparatus 1 according to the present invention performs a processing process on a substrate (S). The substrate (S) may be a glass substrate, a silicon substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform a deposition process for depositing a thin film on the substrate (S), an etching process for removing a part of the thin film deposited on the substrate (S), and the like. Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process will be described, but it will be obvious to a person skilled in the art to which the present invention pertains that an embodiment in which the substrate processing apparatus 1 according to the present invention performs a different processing process in addition to the etching process and the like can be derived from this.

[0016] The substrate processing apparatus 1 according to the present invention includes a support unit 2, lid 3, a first injection section 4, a second injection section 5, a purge section 6, and a rotation section 7.

[0017] The support 2 supports the substrate (S). The support 2 can be coupled to the inside of a chamber 1a that provides a processing space in which the processing step is performed. The processing space is formed by the support 2 and the lid 3. A substrate entrance (not shown) may be coupled to the chamber 1a. The substrate (S) may be loaded into the chamber 1a through the substrate entrance by a loading device (not shown). When the processing process is completed, the substrate (S) may be unloaded to the outside of the chamber 1a through the substrate entrance by an unloading device (not shown). An exhaust unit 1b (shown in FIG. 2) for exhausting gases and the like present in the processing space to the outside may be coupled to the chamber 1a.

[0018] The support portion 2 may include a support member 21 on which the substrate (S) is supported.

[0019] The support member 21 is a support portion 2 and lid 3. That is, the support member 21 may be coupled to the upper surface 2a of the support member 2. The substrate (S) may be supported by the support member 21 so as to protrude in the upward direction (the direction of the UD arrow) of the support member 21. The upward direction (the direction of the UD arrow) is the direction from the support member 2 to the lid Although not shown in the figure, the support member 21 is a support into which the substrate (S) is inserted. Recess In this case, the substrate (S) may include the support (not shown). Recess By being inserted into the support member 21, the support member 21 can be supported by the support member 21. The support member 21 and the support portion 2 can also be formed integrally.

[0020] The support member 21 may protrude in the upward direction (UD arrow direction) from the upper surface 2a of the support part 2. As a result, the upper surface of the substrate (S) may be disposed at a position spaced apart in the upward direction (UD arrow direction) from the upper surface 2a of the support part 2. Therefore, the substrate processing apparatus 1 according to the present invention may realize a suppressing force that suppresses gas from entering the upper surface of the substrate (S) during the process of exhausting gas from the processing space to the outside of the chamber 1a. As a result, the substrate processing apparatus 1 according to the present invention may improve the quality of the substrate (S) after the processing process is completed.

[0021] The support part 2 may include a plurality of the support members 21. Thus, the support part 2 may be embodied to support a plurality of the substrates (S). The support members 21 may be disposed to be spaced apart from each other. Thus, the substrates (S) may be disposed to be spaced apart from each other.

[0022] Referring to FIG. 1 and FIG. 2, lid 3 is disposed at a distance from the support portion 2 in the upward direction (the direction of the UD arrow). lid 3 may be coupled to the chamber 1a so as to cover the upper portion of the chamber 1a. lid 3 and the chamber 1a may be formed in a hexagonal structure as shown in FIG. 1, but is not limited thereto, and may be formed in a cylindrical structure, an elliptical structure, a polygonal structure such as an octagon, or the like.

[0023] 1 to 5, the first injection part 4 injects a first gas. The first injection part 4 is disposed in the upper direction (the direction of the UD arrow) away from the support part 2. lid3. The first injection unit 4 can inject the first gas through a plurality of first injection holes. The first injection unit 4 can inject the first gas into a first region (A1, shown in FIG. 3). Thus, a treatment process using the first gas can be performed in the first region (A1). The first region (A1) is a region where the first gas is injected and may be a region disposed between the support unit 2 and the first injection unit 4. A lower surface 4a of the first injection unit 4 may be disposed on the upper direction (direction of the UD arrow) side of the first region (A1). The lower surface 4a of the first injection unit 4 may be a surface of the first injection unit 4 facing a lower direction (direction of the DD arrow). The lower direction (direction of the DD arrow) may be the opposite direction to the upper direction (direction of the UD arrow). The first injection unit 4 can be connected to a supply unit 10 (shown in FIG. 2) via a hose, a pipe, or the like. The supply unit 10 supplies the first gas. The first gas may be a precursor constituting a source material of a thin film to be deposited on the substrate (S).

[0024] The first injection unit 4 may include a first injection module 41 (shown in FIG. 4) that injects the first gas.

[0025] The first injection module 41 is for injecting the first gas into the first area (A1). The first injection module 41 can inject the first gas into the first area (A1) through the first injection hole. The first injection module 41 can be coupled to a first injection body 42 (shown in FIG. 4) of the first injection part 4. The first injection body 42 is lid 3. The first jetting module 41 is connected to the first jetting body 42 via the first jetting body 42. lid 3. The first injection module 41 may be formed to be larger than the substrate (S).

[0026] A plurality of the first jetting modules 41 may be coupled to the first jetting body 42. In this case, a plurality of substrates (S) may be disposed in the first area (A1). As a result, the substrate processing apparatus 1 according to the present invention can perform a processing process on a plurality of substrates (S) using a first gas injected by the plurality of first jetting modules 41 in the first area (A1), thereby increasing the processing rate of the processing process using the first gas. 2N (N is an integer equal to or greater than 0) first jetting modules 41 may be coupled to the first jetting body 42.

[0027] The first jetting portion 4 may include a first sealing member 43 (shown in FIG. 4).

[0028] The first sealing member 43 is disposed between the first injection body 42 and the lid 3. When a plurality of first injection modules 41 are coupled to the first injection body 42, the first sealing member 43 may be disposed to surround the outside of the first injection module 41. That is, the first injection module 41 may be positioned inside the first sealing member 43. As a result, in the substrate processing apparatus 1 according to the present invention, the first sealing member 43 is not positioned between the first injection modules 41, so that the interval 41D (shown in FIG. 4) between the first injection modules 41 can be reduced. As a result, the substrate processing apparatus 1 according to the present invention can be implemented with a reduced size of the first injection unit 4, thereby enabling an overall miniaturization to be realized.

[0029] 1 to 5, the second injection unit 5 injects a second gas. The second injection unit 5 is disposed in the upper direction (UD arrow direction) away from the support unit 2. lid 3. With respect to the purge section 6, the second jet section 5 and the first jet section 4 may be disposed on opposite sides to each other.

[0030] The second injection unit 5 can inject the second gas through a plurality of second injection holes. The second injection unit 5 can inject the second gas into a second region (A2, shown in FIG. 3). Thus, the second region (A2) can perform a treatment process using the second gas. The second region (A2) is a region into which the second gas is injected, and may be a region disposed between the support unit 2 and the second injection unit 5. The lower surface 5a of the second injection unit 5 may be disposed on the upper direction (direction of the UD arrow) side of the second region (A2). The lower surface 5a of the second injection unit 5 may be a surface of the second injection unit 5 facing the lower direction (direction of the DD arrow). The second region (A2) may be disposed at a position separated from the first region (A1). The second injection unit 5 may be connected to the supply unit 10 (shown in FIG. 2) via a hose, a pipe, or the like. Although not shown in the figure, the supply unit 10 may include a first supply mechanism for supplying the first gas and a second supply mechanism for supplying the second gas. The first supply mechanism may be connected to the first injector 4 to supply the first gas to the first injector 4. The second supply mechanism may be connected to the second injector 5 to supply the second gas to the second injector 5. When the first gas is a source gas, the second gas may be a reaction gas.

[0031] The second injection section 5 may include a second injection module 51 (shown in FIG. 4) that injects the second gas.

[0032] The second injection module 51 is for injecting the second gas into the second area (A2). The second injection module 51 can inject the second gas into the second area (A2) through the second injection hole. The second injection module 51 can be coupled to a second injection body 52 (shown in FIG. 4) of the second injection part 5. The second injection body 52 is lid 3. The second jetting module 51 is connected to the second jetting body 52 via the second jetting body 52. lid 3. The second injection module 51 may be formed to be larger than the substrate (S).

[0033] A plurality of the second jetting modules 51 may be coupled to the second jetting body 52. ​​In this case, a plurality of substrates (S) may be disposed in the second area (A2). As a result, the substrate processing apparatus 1 according to the present invention can perform a processing process of a plurality of substrates (S) using the second gas injected by the plurality of second jetting modules 51 in the second area (A2), thereby increasing the processing rate of the processing process using the second gas. 2N second jetting modules 51 may be coupled to the second jetting body 52. ​​The second jetting modules 51 and the first jetting modules 41 may be provided in the same number.

[0034] The second jetting portion 5 may include a second sealing member 53 (shown in FIG. 4).

[0035] The second sealing member 53 is disposed between the second injection body 52 and the lid 3. When a plurality of second injection modules 51 are coupled to the second injection body 52, the second sealing member 53 may be disposed to surround the outside of the second injection module 51. That is, the second injection module 51 may be positioned inside the second sealing member 53. As a result, in the substrate processing apparatus 1 according to the present invention, the second sealing member 53 is not positioned between the second injection modules 51, so that the interval 51D (shown in FIG. 4) between the second injection modules 51 can be reduced. Therefore, the substrate processing apparatus 1 according to the present invention can be embodied in a manner that allows for an overall miniaturization to be realized since the size of the second injection unit 5 can be reduced.

[0036] 5, the lower surface 5a of the second injection unit 5 may be disposed to be spaced apart from the support unit 2 by a distance greater than the distance the lower surface 4a of the first injection unit 4 is spaced apart from the support unit 2. For example, a first distance (L1) at which the lower surface 4a of the first injection unit 4 is spaced apart from the support unit 2 may be formed to be shorter than a second distance (L2) at which the lower surface 5a of the second injection unit 5 is spaced apart from the support unit 2. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that even if the flow rate of the second gas injected through the second injection unit 5 is greater than the flow rate of the first gas injected through the first injection unit 4, a partial pressure difference between the first region (A1) and the second region (A2) is reduced. The partial pressure means the pressure of each component gas in a mixed gas, and is proportional to the flow rate of the gas and inversely proportional to the size of the region into which the gas is injected. Therefore, in the substrate processing apparatus 1 according to the present invention, even if the second gas is injected at a flow rate greater than that of the first gas, the second region (A2) is formed to be larger than the first region (A1), so that the difference in partial pressure between the first region (A1) and the second region (A2) can be reduced. As a result, the substrate processing apparatus 1 according to the present invention can improve the completion of the processing process using the first gas on the first region (A1) and the processing process using the second gas on the second region (A2) by implementing a suppressing force that suppresses the first gas from permeating into the second region (A2) and the second gas from permeating into the first region (A1) during the processing process using the first gas and the second gas. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality of the substrate after the processing process is completed by preventing the film quality from being deteriorated due to the mixture of the first gas and the second gas.

[0037] Referring to FIG. 5, the lower surface 5a of the second injection part 5 is lid In this case, the lower surface 4a of the first injection part 4 may be disposed so as to be spaced apart from the lower surface 3a of the first injection part 4 in the upward direction (the direction of the UD arrow). lid3 in the downward direction (direction of the arrow DD) from the lower surface 3a of the support part 2. As a result, in the substrate processing apparatus 1 according to the present invention, the second region (A2) is embodied to be larger than the first region (A1), so that even if the second gas is sprayed onto the support part 2 at a flow rate greater than that of the first gas, the difference in gas partial pressure between the first region (A1) and the second region (A2) can be reduced. lid The lower surface 3a of the 3 faces downward (in the direction of the arrow DD). lid It could be three aspects.

[0038] Although not shown in the figure, the lower surface 5a of the second injection part 5 lid When the first injection portion 4 is disposed so as to be spaced apart from the lower surface 3a of the first injection portion 4 in the upward direction (the direction of the UD arrow), the lower surface 4a of the first injection portion 4 is lid 3. As a result, in the substrate processing apparatus 1 according to the present invention, the second region (A2) is embodied to be larger than the first region (A1), thereby reducing the difference in gas partial pressure between the first region (A1) and the second region (A2).

[0039] The lower surface 5a of the second jetting unit 5 may be disposed so as to be spaced from the support unit 2 by 3 to 15 times the distance by which the lower surface 4a of the first jetting unit 4 is spaced from the support unit 2. In this case, the distance by which the lower surface 5a of the second jetting unit 5 is spaced from the support unit 2 may be 3 to 15 times the distance by which the lower surface 4a of the first jetting unit 4 is spaced from the support unit 2. For example, the first separation distance (L1) may be greater than 0 mm and 5 mm or less, and the second separation distance (L2) may be 3 to 15 mm. As a result, in the substrate processing apparatus 1 according to the present invention, the second region (A2) is embodied to be larger than the first region (A1), so that even if the second gas is sprayed onto the support unit 2 at a flow rate greater than that of the first gas, the difference in gas partial pressure between the first region (A1) and the second region (A2) can be reduced.

[0040] The second injection unit 5 can inject the second gas into the second area (A2) having a larger volume than the first area (A1) into which the first injection unit 4 injects the first gas. Thus, even if the second gas is injected onto the support unit 2 at a flow rate greater than that of the first gas, the substrate processing apparatus 1 according to the present invention can suppress the first gas from permeating into the second area (A2) and can implement a suppressing force that suppresses the second gas from permeating into the first area (A1) by reducing the difference in gas partial pressure between the first area (A1) and the second area (A2).

[0041] With reference to FIGS. 4 to 7, the embodiments of the second jetting module 51 (shown in FIG. 4) and the first jetting module 41 (shown in FIG. 4) of the jetting module 30 will be described in detail below.

[0042] 6, the injection module 30 may include a module body 31, a plurality of injection holes 32 for injecting gas toward the support 2, and a transfer hole 33 connected to the injection holes 32. The transfer hole 33 may be connected to the supply unit 10 (shown in FIG. 2). Thus, the gas supplied by the supply unit 10 (shown in FIG. 2) may flow along the transfer hole 33 and be injected to the support 2 through the injection hole 32. Although not shown in the figure, a plasma generator may be connected to the injection module 30. In this case, the injection module 30 may activate a gas using plasma and inject the activated gas toward the support 2.

[0043] As shown in FIG. 7, the injection module 30 may include a first electrode 34 and a second electrode 35. A plurality of protruding electrodes 36 may be formed in the first electrode 34. A plurality of electrode holes 37 may be formed in the second electrode 35. The first electrode 34 and the second electrode 35 may be disposed such that the protruding electrodes 36 are inserted into the electrode holes 37, respectively. In this case, the injection hole 32 and the transfer hole 33 may be formed in the first electrode 34. When the protruding electrode 36 is grounded and a plasma power source is applied to the second electrode 35, the injection module 30 may generate plasma. Thus, the injection module 30 may activate a gas in a space 38 formed between the first electrode 34 and the second electrode 35 using the plasma. The gas that moves sequentially through the transfer hole 33 and the injection hole 32 may be activated in the space 38 and injected toward the support 2.

[0044] The first injection unit 4 and the second injection unit 5 may be embodied to include different types of injection modules 30. For example, the first injection unit 4 may include the shower head type injection module 30 shown in Fig. 6, and the second injection unit 5 may include the electrode structure type injection module 30 shown in Fig. 7. For example, the first injection unit 4 may include the electrode structure type injection module 30 shown in Fig. 7, and the second injection unit 5 may include the shower head type injection module 30 shown in Fig. 6.

[0045] When the first injection unit 4 includes the shower head type injection module 30 and the second injection unit 5 includes the electrode structure type injection module 30, the substrate processing apparatus 1 according to the present invention may be embodied such that the second injection unit 5 injects the second gas into the isolated space 38. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that an additional injection space for the second gas is secured through the isolated space 38, thereby reducing the partial pressure difference between the first area (A1) and the second area (A2) even when the flow rate of the second gas is increased.

[0046] The first and second injectors 4 and 5 may be embodied to include the same type of injection module 30. For example, the first and second injectors 4 and 5 may each include a shower head type injection module 30 as shown in Fig. 6. For example, the first and second injectors 4 and 5 may each include an electrode structure type injection module 30 as shown in Fig. 7.

[0047] 1 to 10, the purge section 6 injects a purge gas. The purge section 6 can partition the first area (A1) and the second area (A2) by injecting a purge gas into a third area (A3). This allows the purge section 6 to prevent the first gas injected into the first area (A1) and the second gas injected into the second area (A2) from mixing with each other. The third area (A3) can be disposed between the first area (A1) and the second area (A2). The third area (A3) is an area into which the purge gas is injected and can be an area disposed between the support section 2 and the purge section 6. A lower surface 6a of the purge section 6 can be disposed on the upper direction (direction of the UD arrow) side of the third area (A3). The lower surface 6a of the purge section 6 can be a surface of the purge section 6 facing the lower direction (direction of the DD arrow) side. The purge unit 6 can be connected to the supply unit 10 (shown in FIG. 2) via a hose, piping, or the like. Although not shown in the figure, the supply unit 10 can include a third supply mechanism that supplies the purge gas. The third supply mechanism can be connected to the purge unit 6 to supply the purge gas to the purge unit 6.

[0048] 9, the lower surface 6a of the purge unit 6 may be disposed so as to be spaced from the support unit 2 at a shorter distance than the lower surface 4a of the first jet unit 4 is spaced from the support unit 2. In this manner, in the substrate processing apparatus 1 according to the present invention, the purge unit 6 protrudes more toward the support unit 2 than the first jet unit 4, and thus the partitioning force of the purge unit 6 partitioning the first region (A1) and the second region (A2) through a gas barrier using the purge gas and a physical barrier using the arrangement of the purge unit 6 can be improved. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the degree of deterioration of film quality due to gas mixing by increasing the prevention force preventing the first gas injected into the first region (A1) and the second gas injected into the second region (A2) from mixing with each other. The lower surface 6a of the purge unit 6 may be disposed so as to be spaced from the support unit 2 at a shorter distance than the lower surface 5a of the second jet unit 5 is spaced from the support unit 2.

[0049] The lower surface 6a of the purge portion 6 is lid In this case, the lower surface 4a of the first injection portion 4 may be disposed so as to protrude from the lower surface 3a of the first injection portion 4 by a first protruding distance. lid 3 at a second protruding distance shorter than the first protruding distance. In this manner, in the substrate processing apparatus 1 according to the present invention, the purge unit 6 protrudes further toward the support unit 2 than the first jet unit 4, thereby improving the partitioning force of the purge unit 6 to partition the first area (A1) and the second area (A2). Although not shown in the figure, the lower surface 6a of the second jet unit 5 may be disposed to protrude a third protruding distance shorter than the second protruding distance from the support unit 2.

[0050] The lower surface 6a of the purge unit 6 and the lower surface 4a of the first jet unit 4 may be disposed to be spaced apart from the support unit 2 by the same distance. For example, the lower surface 6a of the purge unit 6 and the lower surface 4a of the first jet unit 4 may be disposed to be spaced apart from the support unit 2 by the same distance. lidThe lower surface 6a of the purge portion 6 and the lower surface 5a of the second injection portion 5 may be disposed at the same height as the lower surface 3a of the purge portion 6. lid Alternatively, it may be arranged so as to be at the same height as the lower surface 3a of 3.

[0051] 1 to 11, the rotating unit 7 (shown in FIG. 2) rotates the support unit 2. The rotating unit 7 can rotate the support unit 2 around a rotation axis 20 (shown in FIG. 10) of the support unit 2. The rotating unit 7 can rotate the support unit 2 in a first rotation direction (direction of the R1 arrow, shown in FIG. 10). The first region (A1), the third region (A3), the second region (A2), and the third region (A3) can be sequentially arranged along the first rotation direction (direction of the R1 arrow). When the rotating unit 7 rotates the support unit 2, the substrate (S, shown in FIG. 3) supported by the support unit 2 can rotate around the rotation axis 20 of the support unit 2. As a result, the substrate (S) supported by the support unit 2 can move sequentially between the first region (A1), the third region (A3), and the second region (A2).

[0052] When the substrate processing apparatus 1 according to the present invention performs processing steps on a plurality of substrates (S) in each of the first area (A1) and the second area (A2), the rotating unit 7 can operate as follows.

[0053] First, the rotating portion 7 can rotate the support portion 2 so that a plurality of first substrates 100 are positioned in the first region (A1) and a plurality of second substrates 200 are positioned in the second region (A2), as shown in FIG. 10.

[0054] Thereafter, when the first substrate 100 is positioned in the first region (A1) and the plurality of second substrates 200 are positioned in the second region (A2), the rotating portion 7 can stop the supporting portion 2.

[0055] Thereafter, the first injection unit 4 can inject the first gas into the first region (A1). This allows an adsorption process to be performed in the first region (A1) in which the first gas is adsorbed onto the first substrate 100. In this case, the second injection unit 5 can wait without injecting the second gas into the second region (A2).

[0056] Thereafter, when the adsorption process for the first substrate 100 is completed, the rotating unit 7 can rotate the support unit 2 so that the second substrate 200 is located in the first region (A1) and the first substrate 100 is located in the second region (A2) as shown in FIG. 11. In this case, the first substrate 100 can pass through the third region (A3) while moving from the first region (A1) to the second region (A2). As a result, the first gas that cannot be adsorbed to the first substrate 100 can be removed by the purge gas sprayed by the purge unit 6. In this case, the second substrate 200 can pass through the third region (A3) while moving from the second region (A2) to the first region (A1).

[0057] Thereafter, when the second substrate 200 is positioned in the first region (A1) and the first substrate 100 is positioned in the second region (A2), the rotating portion 7 can stop the supporting portion 2.

[0058] Then, the first injector 4 can inject the first gas into the first area (A1). Thus, an adsorption process in which the first gas is adsorbed to the second substrate 200 can be performed in the first area (A1). In this case, the second injector 5 can inject the second gas into the second area (A2). Thus, a deposition process in which the first gas adsorbed to the first substrate 100 reacts with the second gas injected by the second injector 5 to deposit a thin film is performed in the second area (A2). Thus, a thin film can be deposited on the first substrate 100 by atomic layer deposition (ALD). The substrate processing apparatus 1 according to the present invention can be embodied such that even if the second gas is injected at a flow rate greater than that of the first gas, the second area (A2) is formed to be larger than the first area (A1), thereby reducing the gas partial pressure difference between the first area (A1) and the second area (A2). As a result, the substrate processing apparatus 1 according to the present invention can suppress the second gas injected into the second region (A2) from permeating toward the first region (A1), and can implement a suppressing force that suppresses the first gas injected into the first region (A1) from permeating toward the second region (A2). Therefore, the substrate processing apparatus 1 according to the present invention can improve the completion of the deposition process for the first substrate 100 and the adsorption process for the second substrate 200. The adsorption process for the second substrate 200 and the deposition process for the first substrate 100 can be performed in parallel.

[0059] Thereafter, when the deposition process for the first substrate 100 and the adsorption process for the second substrate 200 are completed, the rotation unit 7 can rotate the support unit 2 so that the first substrate 100 is located in the first region (A1) and the second substrate 200 is located in the second region (A2) as shown in FIG. 10. In this case, the second substrate 200 can pass through the third region (A3) while moving from the first region (A1) to the second region (A2). Thus, the first gas that cannot be adsorbed to the second substrate 200 can be removed by the purge gas sprayed by the purge unit 6. In this case, the first substrate 100 can pass through the third region (A3) while moving from the second region (A2) to the first region (A1). Thus, the second gas that cannot be deposited on the first substrate 100 can be removed by the purge gas sprayed by the purge unit 6.

[0060] Thereafter, when the first substrate 100 is positioned in the first region (A1) and the second substrate 200 is positioned in the second region (A2), the rotating portion 7 can stop the supporting portion 2.

[0061] Then, the first injection unit 4 can inject the first gas into the first area (A1). Thus, in the first area (A1), an adsorption process can be performed in which the first gas is adsorbed to the thin film deposited on the first substrate 100. In this case, the second injection unit 5 can inject the second gas into the second area (A2). Thus, in the second area (A2), a deposition process can be performed in which the first gas adsorbed on the second substrate 200 reacts with the second gas injected by the second injection unit 5 to deposit a thin film. Thus, a thin film can be deposited on the second substrate 200 by atomic layer deposition (ALD). The substrate processing apparatus 1 according to the present invention can be embodied such that even if the second gas is injected at a flow rate greater than that of the first gas, the second area (A2) is formed to be larger than the first area (A1), thereby reducing the gas partial pressure difference between the first area (A1) and the second area (A2). As a result, the substrate processing apparatus 1 according to the present invention can suppress the first gas injected into the first region (A1) from permeating toward the second region (A2), and can also realize a suppressing force that suppresses the second gas injected into the second region (A2) from permeating toward the first region (A1). Therefore, the substrate processing apparatus 1 according to the present invention can improve the completion of the deposition process for the second substrate 200 and the adsorption process for the first substrate 100. The adsorption process for the first substrate 100 and the deposition process for the second substrate 200 can be performed in parallel.

[0062] As described above, the rotating unit 7 may repeatedly rotate and stop the supporting unit 2 so that the adsorption process and deposition process for the first substrate 100 and the adsorption process and deposition process for the second substrate 200 are repeatedly performed. The rotating unit 7 may repeatedly rotate and stop the supporting unit 2 until the adsorption process and deposition process are performed a predetermined number of times for each of the first substrate 100 and the second substrate 200. In this case, the number of times the adsorption process and deposition process are performed for the first substrate 100 and the number of times the adsorption process and deposition process are performed for the second substrate 200 may be the same. Therefore, finally, in the second region (A2), the second injecting unit 5 may inject the second gas onto the second substrate 200, and in the first region (A1), the first injecting unit 4 may wait without injecting the first gas onto the first substrate 100.

[0063] In this manner, the substrate processing apparatus 1 according to the present invention is embodied such that an adsorption process is performed in the first region (A1) and a deposition process is performed in the second region (A2), so that a thin film can be deposited by atomic layer deposition (ALD). In this case, the first region (A1) and the second region (A2) are partitioned by the purge gas injected into the third region (A3), so that the quality of the film can be prevented from being deteriorated due to the mixture of the first gas and the second gas. In addition, the substrate processing apparatus 1 according to the present invention is embodied such that the substrate 100, 200 can be moved between the first region (A1) and the second region (A2) by the rotation of the support 2, and the adsorption process and the deposition process are performed in a state where the rotation of the support 2 is stopped. Therefore, the substrate processing apparatus 1 according to the present invention can improve the stability of the process of depositing a thin film by atomic layer deposition (ALD) and improve the quality of the film.

[0064] Meanwhile, when the first substrate 100 is moved from the first region (A1) to the second region (A2), the rotating unit 7 can rotate the support part 2 around the rotation shaft 20 at a fixed rotation angle. When the first substrate 100 is moved from the second region (A2) to the first region (A1), the rotating unit 7 can rotate the support part 2 around the rotation shaft 20 at a variable rotation angle that is variable. For example, the fixed rotation angle may be 180 degrees, and the variable rotation angle may be an angle different from 180 degrees. The variable rotation angle may be 181 degrees, 179 degrees, etc. In this case, the rotating unit 7 can rotate and stop the support part 2 in the order of 180 degrees, 179 degrees, 180 degrees, and 181 degrees. The rotating unit 7 can also rotate and stop the support part 2 in the order of 180 degrees, 181 degrees, 180 degrees, and 179 degrees.

[0065] In this manner, in the substrate processing apparatus 1 according to the present invention, the rotating unit 7 is configured to rotate the support unit 2 at the variable rotation angle, so that the portions of the substrates 100, 200 located below the first injection hole in the first region (A1) and below the second injection hole in the second region (A2) can be changed every time the support unit 2 rotates at the variable rotation angle. As a result, the substrate processing apparatus 1 according to the present invention can reduce the degree of occurrence of a transfer phenomenon in which a hole pattern caused by the positions of the first injection hole and the second injection hole is transferred to a substrate on which the processing process has been completed, thereby improving the uniformity of the processing process.

[0066] Here, the purge section 6 can include a plurality of purge holes 61 (shown in FIG. 8) and a purge body 62 (shown in FIG. 8).

[0067] The purge holes 61 are for injecting the purge gas. The purge holes 61 may be formed in the purge body 62. The purge holes 61 may be arranged to be spaced apart from each other.

[0068] The purge body 62 is lid3. The purge body 62 may be disposed spaced apart from the third area (A3) in the upward direction (direction of the UD arrow).

[0069] Referring to FIG. 8 , the purge body 62 may include a first purge body 621 , a second purge body 622 , and a third purge body 623 .

[0070] The first purge body 621 is disposed between the second purge body 622 and the third purge body 623. The first purge body 621 may be disposed to correspond to a central region (A31, shown in FIG. 8) of the third region (A3). The first purge body 621 may inject the purge gas into the central region (A31) through the purge holes 61. The central region (A31) may be disposed between one side region (A32, shown in FIG. 10) of the third region (A3) and the other side region (A33, shown in FIG. 10) of the third region (A3). The one side region (A32) is a region through which the substrate 100, 200 passes when moving from the first region (A1) to the second region (A2). The other side area (A33) is an area through which the substrates 100, 200 pass when moving from the second area (A2) to the first area (A1).

[0071] The second purge body 622 may be disposed to correspond to the one side region (A32). The second purge body 622 may inject the purge gas into the one side region (A32) through the purge hole 61. A plasma generating mechanism 63 (shown in FIG. 8) may be coupled to the second purge body 622. The plasma generating mechanism 63 generates plasma. Thus, in the process in which the substrates 100 and 200 move from the first region (A1) to the second region (A2), the injection of purge gas onto the substrates 100 and 200 and the plasma treatment of the substrates 100 and 200 may be performed in parallel in the one side region (A32). The second purge body 622 may activate the purge gas using the plasma and inject the activated purge gas into the one side region (A32). In this case, in the one side region (A32), the substrates 100 and 200 may be treated using an activated purge gas. In this case, the second purge body 622 coupled with the plasma generating mechanism 63 may be embodied as a shower head type as shown in FIG. 6 or an electrode structure type as shown in FIG.

[0072] The third purge body 623 may be disposed to correspond to the other region (A33). The third purge body 623 may inject the purge gas into the other region (A33) through the purge hole 61. A window 64 (shown in FIG. 8) may be coupled to the third purge body 623. A temperature measuring unit (not shown) may measure the temperature of the substrates 100 and 200 passing through the other region (A33) through the window 64. The window 64 may be made of a transparent material or a translucent material. Thus, in the process in which the substrates 100 and 200 move from the second region (A2) to the first region (A1), the injection of the purge gas to the substrates 100 and 200 and the measurement of the temperature of the substrates 100 and 200 may be performed in parallel in the other region (A33).

[0073] 12 and 13, a substrate processing apparatus 1 according to the present invention may include a protrusion 8. As shown in FIG.

[0074] The protrusion 8 protrudes from the upper surface 2a of the support 2 in the upward direction (UD arrow direction). The protrusion 8 may be disposed to correspond to the third region (A3). In this way, the substrate processing apparatus 1 according to the present invention can enhance the prevention force of the first gas and the second gas from mixing through the gas barrier using the purge gas and the physical barrier using the protrusion 8. The protrusion 8 may protrude from the upper surface 2a of the support 2 in the upward direction (UD arrow direction) so that the upper surface is located at the same height as the upper surface of the support member 21. The protrusion 8 may be formed in a rectangular parallelepiped shape as a whole, but is not limited thereto, and may be formed in a different shape such as a disk shape as long as the shape can embody a physical barrier between the first region (A1) and the second region (A2). The protrusion 8 and the support 2 may be formed integrally. The protrusion 8 may be disposed at a position spaced apart from the support member 21.

[0075] The protruding portion 8 and the supporting member 21 protrude in the upward direction (the direction of the UD arrow) from the upper surface 2a of the supporting portion 2, so that a first gas is provided between the first region (A1) and the third region (A3). groove 81 (shown in FIG. 13) may be formed. groove 81 may be embodied in a valley-like shape between the protrusion 8 and the support member 21. Thus, the residual gas, which includes at least one of the purge gas injected by the purge unit 6 and the first gas injected by the first injection unit 4, is mixed with the first gas. groove The second gas flows along the second region (A2) and the third region (A3) and is exhausted to the outside of the chamber 1a. groove 82 (shown in FIG. 13) may be formed. groove 82 may be embodied in a valley-like shape between the protrusion 8 and the support member 21. Thus, the residual gas, which includes at least one of the purge gas injected by the purge unit 6 and the second gas injected by the second injection unit 5, is mixed with the second gas. groove It can flow along 82 and be exhausted to the outside of the chamber 1a.

[0076] Therefore, the substrate processing apparatus 1 according to the present invention is groove In addition, in the substrate processing apparatus 1 according to the present invention, the protrusion 8 and the support member 21 protrude from the upper surface 2a of the support 2 in the upward direction (the direction of the UD arrow), so that the residual gas can be smoothly exhausted through the protrusions 8 and 82. groove The gas discharged through the protrusions 8 and the support members 21 is prevented from entering the substrates 100 and 200. groove The outer surfaces facing 81 and 82 can function as a barrier to prevent residual gas from entering the substrates 100 and 200. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the degree to which deviations in processing rates, such as deposition rates and etching rates, occur locally on the substrates 100 and 200 due to residual gas, and can further improve the uniformity of the processing process.

[0077] The present invention described above is not limited to the above-mentioned embodiments and the attached drawings, and it will be apparent to those skilled in the art to which the present invention pertains that multiple substitutions, modifications and alterations are possible within the scope of the technical idea of ​​the present invention.

Claims

1. a support for supporting the substrate; a lead disposed above and spaced apart from the support; a first injection portion coupled to the lead and configured to inject a first gas into a first region; a second injection portion coupled to the lead and configured to inject a second gas into a second region; a purge unit coupled to the lead and configured to inject a purge gas into a third region disposed between the first region and the second region; and a rotating part for rotating the support part, the rotating unit rotates the support unit so that the substrate moves between the first region and the second region, and the supporting unit is stopped while a processing step using a first gas is performed in the first region and a processing step using a second gas is performed in the second region; a lower surface of the first spray unit being disposed so as to be spaced apart from the support by a distance shorter than a distance at which a lower surface of the second spray unit is spaced apart from the support.

2. a lower surface of the second ejection portion is disposed so as to be spaced apart in the upward direction from a lower surface of the lead; The substrate processing apparatus according to claim 1 , wherein a lower surface of the first ejection part is disposed so as to be spaced apart from a lower surface of the lead in a downward direction opposite to the upward direction.

3. 2. The substrate processing apparatus of claim 1, wherein a distance between a lower surface of the second spray unit and the support unit is 3 to 15 times the distance between a lower surface of the first spray unit and the support unit.

4. 2. The substrate processing apparatus of claim 1, wherein the first injector injects the first gas into the first region having a smaller volume than a second region into which the second injector injects the second gas.

5. the first injection unit includes a module body coupled to the lead and a plurality of first injection holes formed in the module body for injecting the first gas into the first region; 2. The substrate processing apparatus of claim 1, wherein the second injection unit includes a first electrode having a plurality of protruding electrodes coupled thereto and a plurality of second injection holes formed therein for injecting the second gas, and a second electrode having a plurality of openings formed at positions corresponding to the protruding electrodes.

6. The substrate processing apparatus of claim 5 , wherein the second injector injects the second gas into a space formed between the first electrode and the second electrode.

7. 2. The substrate processing apparatus of claim 1, wherein the lower surface of the purge unit is disposed so as to be spaced apart from the support by a distance shorter than a distance at which the lower surface of the first injection unit is spaced from the support.

8. 2. The substrate processing apparatus of claim 1, wherein a lower surface of the purge unit and a lower surface of the first injection unit are disposed so as to be spaced apart from the support unit by the same distance.

9. 2. The substrate processing apparatus according to claim 1, wherein the support portion includes a support member protruding upward from an upper surface of the support portion to position an upper surface of the substrate at a position spaced apart from the upper surface of the support portion.

10. The substrate processing apparatus according to claim 1 , further comprising a protruding portion that protrudes in the upward direction from an upper surface of the support portion and is disposed in a third region.

11. 11. The substrate processing apparatus of claim 10, wherein the protrusion includes a first gas hole formed between the first region and the third region, and a second gas hole formed between the first region and the second region.

12. a protrusion protruding in the upward direction from an upper surface of the support portion and disposed in a third region; the support portion includes a support member that protrudes in the upward direction from an upper surface of the support portion and is disposed at a distance from the protrusion, The protrusion has a first gas hole formed between the first region and the third region and a second gas hole formed between the first region and the second region, The substrate processing apparatus according to claim 1 , wherein the protrusion and the support member have outer surfaces facing the gas hole.

13. the purge section includes a purge body coupled to the lead so as to be spaced apart from the third region in the upward direction; The purge body includes a first purge body disposed in a central region of the third region, and a second purge body disposed in one side region of the third region through which the substrate passes when moving from the first region to the second region, 2. The substrate processing apparatus according to claim 1, wherein a plasma generating mechanism for generating plasma is coupled to the second purge body.

14. the purge section includes a purge body coupled to the lead so as to be spaced apart from the third region in the upward direction; The purge body includes a first purge body disposed in a central region of the third region, and a third purge body disposed in another side region of the third region through which the substrate passes when moving from the second region to the first region, 2. The substrate processing apparatus of claim 1, wherein the third purge body is coupled with a window for measuring the temperature of the substrate passing through the other side region.

15. 2. The substrate processing apparatus of claim 1, wherein the rotating unit rotates the support unit by a fixed rotation angle about a rotation axis when the substrate moves from the first region to the second region, and rotates the support unit by a variable rotation angle different from the fixed rotation angle about the rotation axis when the substrate moves from the second region to the first region.

16. the first injection unit includes a plurality of first injection modules that inject the first gas into the first region where a plurality of substrates are disposed, a first injection body to which the first injection modules are coupled, and a first sealing member that seals a gap between the first injection body and the lead; The substrate processing apparatus of claim 1 , wherein the first sealing member is disposed to surround the outside of the first injection module.

Images