Method of determining initial contact point of partial field and method of shaping surface

Abstract

To provide a method of determining a contact point and a novel method for contacting a substrate to a molding surface in a photomechanical molding system.SOLUTION: A system and a method for shaping a membrane on a partial field include determining an initial contact point. Information regarding the partial field of a substrate and the edge of a patternable area of the substrate is received. A code is determined that connects the intersection vertices of the partial field and the edge. The coordinates of the bisector that bisects the code and that is orthogonal to the code are determined. An initial contact point area where a template and a moldable material on the substrate contact each other is determined on the bisector. The contact is made between the moldable material of the partial field and the template at an initial contact point within the initial contact point range.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to photomechanical shaping systems (e.g., nanoimprint lithography, and inkjet adaptive planarization). In particular, the present disclosure relates to a method for determining a contact point, and a novel method for bringing a substrate into contact with a shaping surface.

Background Art

[0002] Nanofabrication involves the manufacture of very small structures having features on the order of 100 nanometers or less. One application that has been significantly affected by nanofabrication is the manufacture of integrated circuits. The semiconductor processing industry continues to strive for greater production yields while increasing the number of circuits per unit area formed on a substrate. Improvements in nanofabrication include providing greater process control and / or improving throughput, while at the same time enabling a continuous reduction in the minimum feature size of the structures being formed.

[0003] One nanofabrication technique currently in use is generally referred to as nanoimprint lithography. Nanoimprint lithography is useful in a variety of applications including, for example, creating one or more layers of an integrated device by forming a film on a substrate. Examples of integrated devices include, but are not limited to, CMOS logic, microprocessors, NAND flash memory, NOR flash memory, DRAM memory, MRAM, three-dimensional cross-point memory, Re-RAM, Fe-RAM, STT-RAM, MEMS, and the like. Exemplary nanoimprint lithography systems and processes are described in detail in a number of publications such as U.S. Patent No. 8,349,241, U.S. Patent No. 8,066,930, and U.S. Patent No. 6,936,194, all of which are hereby incorporated by reference.

[0004] The nanoimprint lithography techniques disclosed in each of the above patents describe forming a film on a substrate by forming a relief pattern on a (polymerizable) layer of a moldable material. The shape of this film can then be used to transfer a pattern corresponding to the relief pattern into and / or onto the underlying substrate.

[0005] The molding process uses a template separated from the substrate. A moldable liquid is applied to the substrate. The template comes into contact with the moldable liquid, which has been deposited as a droplet pattern, and spreads the liquid to fill the space between the template and the substrate. The moldable liquid solidifies to form a film with a shape (pattern) that matches the molding surface of the template. After solidification, the template is separated from the solidified layer so that the template and the substrate are separated.

[0006] Next, the substrate and solidified layer may undergo known steps and processes for device (article) manufacturing, including, for example, curing, oxidation, layer formation, deposition, doping, planarization, etching, removal of moldable material, dicing, bonding, and packaging. For example, a pattern on the solidified layer may undergo an etching process to transfer the pattern to the substrate. [Overview of the project]

[0007] A first embodiment may be a method. The method may include the step of receiving information about a portion field of a substrate and the edges of a patternable region of the substrate. The method may further include the step of determining a code connecting the intersection vertices of the portion field and the edges. The method may further include the step of bisecting the code and determining the coordinates of a line of bisector perpendicular to the code. The method may further include the step of determining an initial contact point range on the line of bisector where the template and the moldable material on the substrate come into contact with each other. The method may further include the step of bringing the moldable material of the portion field and the template into contact at initial contact points within the initial contact point range.

[0008] In one embodiment of the first embodiment, the area of ​​the partial field is less than 30% of the area of ​​the complete field of the substrate.

[0009] The first embodiment may further include the step of determining control conditions that enable the template to make initial contact with the moldable material at the initial contact point.

[0010] In one aspect of the first embodiment, the control condition includes a pressure applied to the back of the template to curve the template.

[0011] In one aspect of the first embodiment, the control condition includes tilting the template relative to the substrate.

[0012] In one aspect of the first embodiment, the control conditions include a set of control values ​​supplied to a substrate chuck, which deforms the shape of the substrate.

[0013] In one aspect of the first embodiment, the edge of the patternable region is set inward from the substrate edge.

[0014] In one aspect of the first embodiment, the substrate may be divided into a plurality of fields, each comprising a plurality of complete fields and a plurality of partial fields. The plurality of partial fields may be classified into a plurality of partial field categories. The first embodiment may further include a step of determining an initial contact point for a particular partial field among the plurality of partial fields based on the partial field category.

[0015] In one aspect of the first embodiment, the partial field category may be based on the shape of the partial field.

[0016] The first embodiment may also be a method for forming a film on a substrate in multiple fields. A subset of fields, which are classified as partial fields, is formed using the first embodiment. The method for forming a film may further include, after initial contact, adjusting control conditions so that the template is in contact with the entirety of the formable material in a particular field. The method for forming a film may further include, after the template and the substrate are substantially parallel to each other, exposing the formable material beneath the template to chemical radiation. The method for forming a film may further include, separating the template from the formable material.

[0017] The first embodiment may also be a method for manufacturing an article from a film-formed substrate. The first embodiment may further include a step of processing the substrate. The first embodiment may further include a step of forming the article from the processed device-forming substrate.

[0018] The first embodiment further includes, after the initial contact, increasing the template back pressure used by the template chuck to bend the template.

[0019] In one aspect of the first embodiment, the received information may include a layout of multiple fields.

[0020] A second embodiment may be a system comprising one or more memories and one or more processors. The one or more processors may be configured to receive information about a template, a partial field of a substrate, and the edges of a patternable region of the substrate. The one or more processors may be further configured to determine a code connecting the intersection vertices of the partial field and the edges. The one or more processors may be further configured to bisect the code and determine the coordinates of a bisector perpendicular to the code. The one or more processors may be further configured to determine an initial contact point range on the bisector where the template and the moldable material on the substrate come into contact with each other. The one or more processors may be further configured to transmit instructions to a molding system to bring the moldable material of the partial field on the substrate into contact with the template at initial contact points within the initial contact point range.

[0021] In one aspect of the second embodiment, the processor is further configured to determine control conditions that enable the template to make initial contact with the moldable material at the initial contact point.

[0022] A second embodiment may further include a template chuck for applying pressure to the back of the template to curve the template. The control condition may include the pressure.

[0023] A second embodiment may further include a plurality of actuators for adjusting the tilt of the template relative to the substrate. The control conditions may include the tilt.

[0024] The second embodiment may further include a substrate chuck for deforming the shape of the substrate. The control conditions may include a set of control values ​​supplied to the substrate chuck.

[0025] In one aspect of the second embodiment, the substrate is divided into a plurality of fields, each comprising a plurality of complete fields and a plurality of partial fields. The plurality of partial fields are classified into a plurality of partial field categories. The processor may be further configured to determine an initial contact point for a particular partial field among the plurality of partial fields based on the partial field category.

[0026] In one aspect of the second embodiment, the partial field category is based on the shape of the partial field.

[0027] These and other purposes, features, and advantages of this disclosure will become apparent upon reading the following detailed description of exemplary embodiments of this disclosure in conjunction with the accompanying drawings and the claims provided. [Brief explanation of the drawing]

[0028] To allow for a more detailed understanding of the features and advantages of this disclosure, a more specific description of embodiments of this disclosure may be made by reference to embodiments shown in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of this disclosure and therefore should not be considered to limit the scope of this disclosure, as other equally valid embodiments may be permitted.

[0029] [Figure 1] Figure 1 shows an exemplary nanoimprint lithography system used in one embodiment, comprising a template having mesas spaced apart from the substrate.

[0030] [Figure 2A] Figure 2A is a diagram of an exemplary template that may be used in one embodiment. [Figure 2B] Figure 2B is a diagram of an exemplary template that may be used in one embodiment.

[0031] [Figure 3]Figure 3 is a flowchart showing an exemplary imprint method used in one embodiment.

[0032] [Figure 4A] Figure 4A shows a diagram of a field layout on a substrate used in one embodiment. [Figure 4B] Figure 4B shows a diagram of a field layout on a substrate used in one embodiment.

[0033] [Figure 4C] Figure 4C shows a small partial field on a substrate used in one embodiment.

[0034] [Figure 5] Figure 5 is a flowchart showing a method for determining the ICP of a small partial field, as used in one embodiment.

[0035] [Figure 6A] Figure 6A shows a small partial field on a substrate used in one embodiment. [Figure 6B] Figure 6B shows a small partial field on a substrate used in one embodiment. [Figure 6C] Figure 6C shows a small partial field on a substrate used in one embodiment. [Figure 6D] Figure 6D shows a small partial field on a substrate used in one embodiment.

[0036] [Figure 7A] Figure 7A shows a template and substrate used in one embodiment. [Figure 7B] Figure 7B shows a template and substrate used in one embodiment. [Figure 7C] Figure 7C shows a template and substrate used in one embodiment. [Figure 7D] Figure 7D shows a template and substrate used in one embodiment. [Figure 7E] Figure 7E shows a template and substrate used in one embodiment.

[0037] [Figure 8A] Figure 8A is a chart showing the relationship between the ICP offset and control parameters of a molding system used in one embodiment. [Figure 8B] Figure 8B is a chart showing the relationship between the ICP offset and control parameters of a molding system used in one embodiment.

[0038] [Figure 9] Figures 9A to 9G are timing diagrams showing the control parameters of a molding system used in one embodiment.

[0039] [Figure 10] Figure 10 is a flowchart showing the adjustment of control parameters of a molding system used in one embodiment.

[0040] Throughout the drawings, unless otherwise noted, the same reference numerals and letters are used to indicate similar features, elements, components, or parts of the exemplary embodiments. Furthermore, this disclosure is described in detail with reference to the drawings, but in relation to exemplary embodiments that are useful for the explanation. It is intended that changes and modifications may be made to the exemplary embodiments described without departing from the true scope and spirit of the disclosure of subject matter as defined by the appended claims. [Modes for carrying out the invention]

[0041] Nanoimprint lithography technology can be used as a process and iterative method for forming films with a template across multiple fields (regions) on a substrate. The patterning regions (mesas) of the substrate and template may have different shapes and sizes. For example, a substrate may have regions that can be patterned in circular, elliptical, polygonal, or several other shapes. Mesas are typically smaller than the substrate and have a different shape. The substrate is divided into multiple full fields and multiple partial fields. Full fields are the same size as the mesas. Partial fields are fields on the edges of the substrate where the edges (edges, ends) of the patternable regions on the substrate intersect with the patterning regions of the mesa. These fields can be divided into multiple categories based on their shape and / or area relative to the full fields.

[0042] Partial fields tend to have higher defect rates and / or longer processing times than complete fields. Furthermore, small partial fields with an area less than 30% of a complete field are particularly challenging. What is needed is a method to reduce the defect rate and / or shorten the processing time of small partial fields.

[0043] Molding system Figure 1 shows a molding system 100 (e.g., a nanoimprint lithography system or an inkjet adaptive planarization system) in which one embodiment may be implemented. The molding system 100 is used to produce an imprinted (molded) film on a substrate 102. The substrate 102 may be coupled to a substrate chuck 104. The substrate chuck 104 may be, but is not limited to, a vacuum chuck, a pin chuck, a grooved chuck, an electrostatic chuck, an electromagnetic chuck, etc.

[0044] The substrate 102 and the substrate chuck 104 may be further supported by a substrate positioning stage 106. The substrate positioning stage 106 can provide translational and / or rotational motion along one or more of the position axes x, y, and z, as well as the rotation axes θ, ψ, and φ. The substrate positioning stage 106, the substrate 102, and the substrate chuck 104 may also be positioned on a base (not shown). The substrate positioning stage may be part of a positioning system. In an alternative embodiment, the substrate chuck 104 may be mounted on the base.

[0045] Separated from the substrate 102 is the template 108 (also called a superstraight). The template 108 may include a body having a mesa (also called a mold) 110 extending toward the substrate 102 on the front side of the template 108. The mesa 110 may also have a molding surface 112 on the front side of the template 108. The molding surface 112, also known as the patterning surface, is the surface of the template on which the moldable material 124 is molded. In one embodiment, the molding surface 112 is planar and is used to flatten the moldable material. Alternatively, the template 108 may be formed without the mesa 110, in which case the surface of the template facing the substrate 102 is equivalent to the mesa 110, and the molding surface 112 is the surface of the template 108 facing the substrate 102.

[0046] The template 108 may be formed from a material including, but not limited to, fused silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metals, and hardened sapphire. The molded surface 112 may have features defined by a plurality of spaced-apart template recesses 114 and / or template protrusions 116. The molded surface 112 defines a pattern that forms the basis for a pattern that may be formed on the substrate 102. In an alternative embodiment, the molded surface 112 has no features, in which case a flat surface is formed on the substrate. In an alternative embodiment, the molded surface 112 has no features, is the same size as the substrate, and a flat surface is formed across the entire substrate.

[0047] The template 108 may be coupled to a template chuck 118. The template chuck 118 may be, but is not limited to, a vacuum chuck, a pin chuck, a groove chuck, an electrostatic chuck, an electromagnetic chuck, and / or other similar chuck types. The template chuck 118 may be configured to apply varying stress, pressure, and / or strain to the template 108. The template chuck 118 may include a template magnification control system 121. The template magnification control system 121 may include a piezoelectric actuator (or other actuator) that can squeeze and / or stretch different parts of the template 108. The template chuck 118 may include a system such as a zone-based vacuum chuck, actuator array, or pressure bladder that can apply a pressure difference to the back of the template to bend and deform the template.

[0048] The template chuck 118 may be coupled to a molding head 120, which is part of a positioning system. The molding head 120 may be movably connected to a bridge. The molding head 120 may include one or more actuators, such as a voice coil motor, a piezoelectric motor, a linear motor, a nut, and a screw motor, which are configured to move the template chuck 118 relative to the substrate in at least the z-axis direction and potentially in other directions (e.g., position axes x and y, as well as rotation axes θ, ψ, and φ).

[0049] The molding system 100 may further include a fluid dispenser 122. The fluid dispenser 122 may also be movably connected to a bridge. In one embodiment, the fluid dispenser 122 and the molding head 120 share one or more or all of the positioning components. In an alternative embodiment, the fluid dispenser 122 and the molding head 120 move independently of each other. The fluid dispenser 122 may be used to deposit liquid moldable material 124 (e.g., polymerizable material) onto the substrate 102 in a droplet pattern. Additional moldable material 124 may also be added to the substrate 102 using techniques such as drop dispensing, spin coating, immersion coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, or thick film deposition before the moldable material 124 is deposited on the substrate 102. Depending on design considerations, the moldable material 124 may be distributed onto the substrate 102 before and / or after a desired volume is defined between the molding surface 112 and the substrate 102. The moldable material 124 may include mixtures containing monomers such as those described in U.S. Patent Nos. 7,157,036 and U.S. Patent No. 8,076,386, both of which are incorporated herein by reference.

[0050] Different fluid dispensers 122 can use different techniques to dispense the moldable material 124. If the moldable material 124 is sprayable, an inkjet-type dispenser can be used to dispense the moldable material. For example, thermal inkjetting, micro-electromechanical system (MEMS) based inkjetting, valve jetting, and piezoelectric inkjetting are common techniques for dispensing sprayable liquids.

[0051] The molding system 100 may further include a curing system that induces a phase change of the liquid moldable material into a solid material whose upper surface is determined by the shape of the molding surface 112. The curing system may include at least one radiation source 126 that directs chemical ray energy along the exposure path 128. The molding head and substrate positioning stage 106 may be configured to position the template 108 and substrate 102 in alignment with the exposure path 128. The radiation source 126 delivers chemical ray energy along the exposure path 128 after the template 108 has come into contact with the moldable material 128. Figure 1 shows the exposure path 128 when the template 108 is not in contact with the moldable material 124, which is done for illustrative purposes so that the relative positions of the individual components can be easily identified. Those skilled in the art will understand that the exposure path 128 does not substantially change when the template 108 comes into contact with the moldable material 124. In one embodiment, chemical ray energy can be directed through both the template chuck 118 and the template 108 to the moldable material 124 beneath the template 108. In one embodiment, the chemical ray energy generated by the radiation source 126 is UV light that induces polymerization of monomers in the moldable material 124.

[0052] The molding system 100 may further include a field camera 136 positioned to observe the spreading of the moldable material 124 after the template 108 has come into contact with the moldable material 124. Figure 1 shows the optical axis of the field camera's image field as a dashed line. As shown in Figure 1, the molding system 100 may include one or more optical components (such as a dichroic mirror, beam combiner, prism, lens, or mirror) that combine a chemical beam with light detected by the field camera. The field camera 136 may be configured to detect the spreading of the moldable material under the template 108. The optical axis of the field camera 136 shown in Figure 1 is linear, but may be bent by one or more optical components. The field camera 136 may include one or more of a CCD, sensor array, line camera, and photodetector configured to collect light having wavelengths that show a contrast between the area under the template 108 that is in contact with the moldable material and the area under the template 108 that is not in contact with the moldable material 124. The field camera 136 may be configured to collect a monochromatic image of visible light. The field camera 136 can be configured to provide images of the spread of the moldable material 124 under the template 108 and the separation of the template 108 from the cured moldable material, and can be used to track the imprint (molding) process. The field camera 136 may also be configured to measure interference fringes, which change as the moldable material 124 spreads across the gap between the molding surface 112 and the substrate surface 130.

[0053] The molding system 100 may further include a droplet inspection system 138 separate from the field camera 136. The droplet inspection system 138 may include one or more of a CCD, camera, line camera, and photodetector. The droplet inspection system 138 may include one or more optical components such as a lens, mirror, optical diaphragm, aperture, filter, prism, polarizer, window, adaptive optical system, and / or light source. The droplet inspection system 138 may be positioned to inspect droplets before the molding surface 112 contacts the moldable material 124 on the substrate 102. In an alternative embodiment, the field camera 136 may be configured as the droplet inspection system 138 and used before the molding surface 112 contacts the moldable material 124.

[0054] The molding system 100 may further include a thermal radiation source 134 which can be configured to provide a spatial distribution of thermal radiation to one or both of the template 108 and the substrate 102. The thermal radiation source 134 may include one or more thermal electromagnetic radiation sources that heat one or both of the substrate 102 and the template 108 without solidifying the moldable material 124. The thermal radiation source 134 may include SLMs such as digital micromirror devices (DMDs), liquid crystal on silicon (LCoS), and liquid crystal devices (LCDs) to modulate the spatiotemporal distribution of thermal radiation. The molding system 100 may further include one or more optical components used to combine chemical rays, thermal rays, and radiation collected by a field camera 136 on a single optical path that intersects the imprint field when the template 108 contacts the moldable material 124 on the substrate 102. The thermal radiation source 134 can deliver thermal radiation along the thermal radiation path (illustrated as two thick dark lines in Figure 1) after the template 108 has come into contact with the moldable material 128. Figure 1 shows the thermal radiation path when the template 108 is not in contact with the moldable material 124, which is done for illustrative purposes so that the relative positions of the individual components can be easily identified. Those skilled in the art will understand that the thermal radiation path does not substantially change when the template 108 comes into contact with the moldable material 124. In Figure 1, the thermal radiation path is shown terminated at the template 108, but it may terminate at the substrate 102. In an alternative embodiment, the thermal radiation source 134 is located beneath the substrate 102, and the thermal radiation path is not combined with chemical rays and visible light.

[0055] The substrate coating 132 may be applied to the substrate 102 before the moldable material 124 is distributed onto the substrate. In one embodiment, the substrate coating 132 may be an adhesive layer. In one embodiment, the substrate coating 132 may be applied to the substrate 102 before the substrate is loaded onto the substrate chuck 104. In an alternative embodiment, the substrate coating 132 may be applied to the substrate 102 while the substrate 102 is on the substrate chuck 104. In one embodiment, the substrate coating 132 may be applied by spin coating, dip coating, droplet distribution, slot distribution, etc. In one embodiment, the substrate 102 may be a semiconductor wafer. In another embodiment, the substrate 102 may be a blank template (replica blank) that can be used to create child (daughter) templates after imprinting.

[0056] The molding system 100 may include an imprint field atmosphere control system, such as a gas and / or vacuum system, examples of which are described in U.S. Patent Publications 2010 / 0096764 and 2019 / 0101823, which are incorporated herein by reference. The gas and / or vacuum system may include one or more pumps, valves, solenoids, gas sources, gas pipes, etc., configured to deliver one or more different gases at different times and in different areas. The gas and / or vacuum system may be connected to a first gas transport system that transports gas to and from the edges of the substrate 102 and controls the imprint field atmosphere by controlling the gas flow at the edges of the substrate 102. The gas and / or vacuum system may be connected to a second gas transport system that transports gas to and from the edges of the template 108 and controls the imprint field atmosphere by controlling the gas flow at the edges of the template 108. The gas and / or vacuum system may be connected to a third gas transport system that transports gas to and from the top of template 108 and controls the imprint field atmosphere by controlling the gas flow through template 108. One or more of the first, second, and third gas transport systems may be used in combination or individually to control the gas flow in and around the imprint field.

[0057] The molding system 100 may be coordinated, controlled, and / or directed by one or more processors 140 (controllers) that communicate with one or more components and / or subsystems, such as a substrate chuck 104, a substrate positioning stage 106, a template chuck 118, a molding head 120, a fluid dispenser 122, a radiation source 126, a heat radiation source 134, a field camera 136, an imprint field atmosphere control system, and / or a droplet inspection system 138. The processors 140 may operate based on instructions in a computer-readable program stored in non-temporary computer-readable memory 142. The processors 140 may be or include one or more of a CPU, MPU, GPU, ASIC, FPGA, DSP, and a general-purpose computer. The processors 140 may be a general-purpose controller, or a general-purpose computing device configured to be a controller. Examples of non-temporary computer-readable memory include, but are not limited to, RAM, ROM, CD, DVD, Blu-ray, hard drives, network-attached attached storage (NAS), intranet-connected non-temporary computer-readable storage devices, and internet-connected non-temporary computer-readable storage devices. The controller 140 is included in the molding system 100a and may include multiple processors that communicate with the molding system 100a. The processors 140 may communicate with a networked computer 140a where analysis is performed and control files such as droplet patterns are generated. In one embodiment, one or both of the networked computers 140a have one or more graphical user interfaces (GUIs) 141 and the communication with the processors 140 is shown to the operator and / or user.

[0058] The molding head 120, the substrate positioning stage 106, or both, vary the distance between the mold 110 and the substrate 102 to define the desired space (a bounded physical extent in three dimensions) to be filled with the moldable material 124. For example, the molding head 120 can apply force to the template 108 so that the mold 110 is in contact with the moldable material 124. After the desired volume is filled with the moldable material 124, the radiation source 126 generates chemical rays (e.g., UV, 248 nm, 280 nm, 350 nm, 365 nm, 395 nm, 400 nm, 405 nm, 435 nm, etc.) to cure, solidify, and / or crosslink the moldable material 124, matching the shape of the substrate surface 130 with the molded surface 112 and defining a patterned layer on the substrate 102. The moldable material 124 hardens while the template 108 is in contact with the moldable material 124, forming a patterned layer on the substrate 102. Thus, the molding system 100 uses the molding process to form a patterned layer having recesses and protrusions, which are inversions of the pattern within the molded surface 112. In an alternative embodiment, the molding system 100 uses the molding process to form a planar layer having a molded surface 112 without features.

[0059] The molding process may be repeated over multiple imprint fields (also known simply as fields or shots) that extend across the substrate surface 130. Each imprint field may be the same size as the mesa 110 or the same size as the pattern area of ​​the mesa 110. The pattern area of ​​the mesa 110 is the area of ​​the molding surface 112 used to imprint a pattern onto the substrate 102, which is a feature of the device, or to form the feature of the device in a subsequent process. The pattern area of ​​the mesa 110 may or may not include mass velocity fluctuation features (fluid control features) used to prevent overflow from forming on the edges of the imprint fields. In an alternative embodiment, the substrate 102 has only one imprint field that is the same size as the area of ​​the substrate 102 that is patterned with the substrate 102 or the mesa 110. In an alternative embodiment, the imprint fields overlap. Some of the imprint fields may be partial imprint fields that intersect with the boundaries of the substrate 102.

[0060] The patterned layer may be formed to have a residual layer having a residual thickness (RLT) which is the minimum thickness of the moldable material 124 between the substrate surface 130 and the molding surface 112 in each imprint field. The patterned layer may also include one or more features, such as protrusions, extending over the residual layer having thickness. These protrusions coincide with the recesses 114 of the mesa 110.

[0061] template Figure 2A is a diagram (not to scale) of a template 108 that may be used in one embodiment. The molding surface 112 may be on a mesa 110 (identified by the dashed box in Figure 2A). The mesa 110 is surrounded by the front concave surface 244 of the template. The mesa 110 has a mesa height h T It has a mesa height h. TThis can be between 1 and 200 μm. The mesa sidewall 246 connects the recess surface 244 to the forming surface 112 of the mesa 110. The mesa sidewall 246 surrounds the mesa 110. In one embodiment, where the mesa is rounded or has rounded corners, the mesa sidewall 246 refers to a single mesa sidewall that is a continuous wall without corners. In one embodiment, the mesa sidewall 246 may have one or more profiles, which are vertical profiles, angled profiles, curved profiles, stepped profiles, sigmoid profiles, convex profiles, or combinations of these profiles. Figure 2B is a perspective view of the template 108 (not to scale) showing the mesa edge 210e. Figure 2B shows that the intersection of the mesa sidewall 246 and the recess surface 244 may have some curvature for the process of etching away the material forming the template precursor to form the mesa 110 on the template 108. The template 108 has a template width w as shown in Figures 2A and 2B. T It may have a quadrilateral planar shape having a template width w. In an alternative embodiment, the template width w T The distinctive width is w, and the planar shape of template 108 can be a rectangle, parallelogram, polygon, circle, or any other shape. T The range is 10-200mm.

[0062] Molding process Figure 3 is a flowchart of a method for manufacturing an article (device), including a molding process 300 performed by a molding system 100. The molding process 300 may be used to form a pattern on a moldable material 124 on one or more imprint fields (also called pattern areas or shot areas). The molding process 300 may be repeatedly performed on multiple substrates 102 by the molding system 100. A processor 140 may be used to control the molding process 300.

[0063] In an alternative embodiment, the molding process 300 is used to flatten the substrate 102. In this case, the molded surface 112 may have no feature characteristics and may be the same size as the substrate 102 or larger.

[0064] The start of the molding process 300 may include a template mounting step in which the template 108 is placed on the template chuck 118 by the template transport mechanism. The molding process 300 may also include a substrate mounting step, in which the processor 140 may place the substrate 102 on the substrate chuck 104 by the substrate transport mechanism. The substrate may have one or more coatings and / or structures. The order in which the template 108 and the substrate 102 are placed on the molding system 100 is not particularly limited, and the template 108 and the substrate 102 may be placed sequentially or simultaneously.

[0065] In the positioning step, the processor 140 may move the imprint field i (index i may be initially set to 1) of the substrate 102 to the fluid dispensing position below the fluid dispenser 122, on either or both of the substrate positioning stage 106 and / or the dispenser positioning stage. The substrate 102 can be divided into N imprint fields, each imprint field identified by a molded field index i, where N is the number of molded fields and is a real positive integer such as 1, 10, 62, 75, 84, 100, etc. JPEG2023007399000002.jpg1239. In the dispensing step S302, the processor 140 can cause the fluid dispenser 122 to dispense (supply) the formable material onto the imprint field based on the droplet pattern. In one embodiment, the fluid dispenser 122 dispenses the formable material 124 as a plurality of droplets. The fluid dispenser 122 may include one nozzle or a plurality of nozzles. The fluid dispenser 122 may simultaneously eject the formable material 124 from one or more nozzles. The imprint field may be moved relative to the fluid dispenser 122 while the fluid dispenser is ejecting the formable material 124. Thus, the time at which some of the droplets land on the substrate can vary across the imprint field i. The dispensing step S302 is for each imprint field i for a dispensing period T d and may be performed during.

[0066] In one embodiment, during the dispensing step S302, the formable material 124 is dispensed onto the substrate 102 according to the droplet pattern. The droplet pattern may include one or more of information such as the position where the droplets of the formable material are deposited, the volume of the droplets of the formable material, the type of the formable material, the shape parameters of the droplets of the formable material, etc. In one embodiment, the droplet pattern may include only the volume of the droplets that can be dispensed and the position where the droplets are deposited.

[0067] After the droplets are dispensed, the contacting step S304 is started, and the processor 140 can cause the forming surface 112 of the template 108 to contact the formable material 124 within a specific imprint field on one or both of the substrate positioning stage 106 and the template positioning stage. The contacting step S304 starts after the dispensing period T d and may be performed during a contacting period T contact starting from the initial contact between the forming surface 112 and the formable material 124. In one embodiment, the template chuck 118 is for the contacting period T contactAt the start of the contact period T, the template 108 is configured to be curved so that only a portion of the molding surface 112 contacts a portion of the moldable material. In one embodiment, the contact period T contact The process ends when the template 108 is no longer bent by the template chuck 118. The degree to which the molding surface 112 is curved relative to the substrate surface 130 can be estimated by the spread camera 136. The spread camera 136 may be configured to record interference fringes based on reflectivity from at least the molding surface 112 and the substrate surface 130. The greater the distance between adjacent interference fringes, the greater the degree to which the molding surface 112 is curved.

[0068] During the filling step S306, the moldable material 124 expands toward the edges of the imprint field and the mesa sidewalls 246. The edges of the imprint field may be defined by the mesa sidewalls 246. How the moldable material 124 expands and fills the mesa can be observed via a field camera 136, which may be used to track the progress of the fluid front of the moldable material. In one embodiment, the filling step S306 is performed during a filling period T f This takes place during the filling period T. f This process begins when contact step S304 is completed. Filling period T f The curing period is T c It ends at the start of the filling period T. f During this time, the back pressure and the force applied to the template are kept substantially constant. In this context, substantially constant means that the back pressure fluctuations and force fluctuations are within the controllable tolerance of the molding system 100, where they may be less than 0.1% of the setpoint values.

[0069] In curing step S308, processor 140 has a curing period T c During this time, the radiation source 126 can be instructed to send a chemical beam curing illumination pattern through the template 108, mesa 110, and molding surface 112. The curing illumination pattern provides sufficient energy to cure (polymerize) the moldable material 124 beneath the molding surface 112. Curing period T cThis is the period during which the moldable material under the template receives a chemical beam with sufficient strength to solidify (cure) the moldable material. In an alternative embodiment, the moldable material 124 undergoes a curing period T. c Prior to this, the moldable material is exposed to a gelling illumination pattern of chemical rays that does not cure the moldable material but increases its viscosity.

[0070] In separation step S310, the processor 140 uses one or more of the substrate chuck 104, substrate positioning stage 106, template chuck 118, and molding head 120 to perform separation during separation period T. s During this time, the molding surface 112 of the template 108 is separated from the cured moldable material on the substrate 102. If there are additional imprint fields that can be imprinted, the process returns to step S302. In an alternative embodiment, during step S302, two or more imprint fields receive the moldable material 124, and the process returns to step S302 or S304.

[0071] In one embodiment, after the molding process 300 is completed, additional semiconductor manufacturing processes are performed on the substrate 102 in processing step S312 to create a manufactured article (e.g., a semiconductor device). In one embodiment, each imprint field includes multiple devices.

[0072] Further semiconductor manufacturing processes in processing step S312 may include etching to transfer a pattern in the patterned layer, or a relief image corresponding to an inversion of that pattern, onto the substrate. Further processes in processing step S312 may also include known processes and processes for manufacturing articles, such as inspection, curing, oxidation, layer formation, deposition, doping, planarization, etching, removal of moldable material, dicing, bonding, packaging, mounting, and circuit board assembly. The substrate 102 may be processed to manufacture multiple articles (devices).

[0073] Layout of fields on the circuit board The molding process 300 can be used in a step-and-repeat manner to mold a film having a template 108 into multiple fields across a substrate 102. The patterning areas (mesas 110) of the substrate 102 and template 108 may have different shapes and sizes. For example, the substrate 102 may have patternable areas that are circular, elliptical, polygonal, or any other shape. The mesa 110 is typically smaller than the substrate 102 and has a different shape from the substrate 102. The substrate 102 is divided into multiple full fields and multiple partial fields, as shown in Figures 4A-4B. A full field is the same size as a mesa 110. A partial field is a field on the edge of the substrate where the edges of the patternable areas on the substrate intersect with the patterning areas of the mesa. These fields may be divided into multiple categories based on their shape and / or area relative to the full fields. A subset of these partial fields may be classified as small partial fields.

[0074] Small partial field Figure 4C shows a small subfield 448 on the substrate 102 in the coordinate system of the mesa 110. In Figure 4C, the mesa edge 210e is shown as a dotted line. Figure 4C also shows the origin O of the mesa coordinate system at the center of the mesa 110. The edges 450 of the patternable area are shown set inward from the substrate edge. In one embodiment, the edges 450 of the patternable area may be set inward from the substrate edge by 0 to 3 mm. The non-patternable area is shown as a diamond grid pattern in Figure 4C. The width of the non-patternable area may be determined by edge treatment of the substrate 102, which is treated to have rounded, beveled, or chamfered edges. The substrate 102 may also undergo a number of pretreatments to cause the edges to have a random, unpredictable pattern. The substrate 102 may also have orientation features such as notches or flat edges.

[0075] As shown in Figure 4C, the extent of the small partial field 448 is defined on two sides by the mesa edge 210e intersecting at vertex B. The extent of the small partial field 448 is also defined by the arc of the patternable region edge 450. The arc of the patternable region edge 450 may be defined as a circle, ellipse, spline, polygon, or as part of any other geometric quantity that can be used to define the shape of the patternable region edge 450. The arc of the patternable region edge 450 intersects the mesa edge 210e at vertices A and C.

[0076] initial contact point The molding process 300 is controlled using a number of parameters. In one embodiment, one of the process parameters used during the contact step S302 is the initial contact point (ICP) of each field. The ICP is the point in the field where the template 108 first makes contact with the moldable material 124 on the substrate 102. The template 108 is curved by the template chuck 118 so that only a small portion of the template 108 contacts the moldable material 124 at the ICP. The curvature of the template is reduced as the template approaches the substrate until the template becomes flat, which is done to allow gas to escape during the contact step S304.

[0077] In the case of a complete field, the ICP is at the center of the complete field. Although the ICP is a single point, the actual initial contact area is, for example, 1-2 mm when an imprint force of 0.1 N is detected during the initial contact. 2This is a large region that can have an area of ​​. For subfields, determining the ICP becomes more complex, depending on the shape and area of ​​the subfield. For large subfields (90% to 99% of a complete field), the ICP can be at the same point as the complete field, or somewhere within the initial contact area. For medium-sized subfields, the initial contact point can be determined by calculating the geometric center (GC) or centroid of the subfield. There are several methods that can be used to determine the GC. One method for estimating the GC is to use the method of intersecting meridians, as shown in Figure 4C. Another method is to approximate the edges of the subfield using a function, which may be piecewise defined and continuous across the subfield. Alternatively, integration may be used to estimate the geometric center of the subfield. A third method for identifying the GC is to minimize the distance from the GC to the farthest angle of the subfield.

[0078] The applicant has found that the GC works well for large and medium-sized fields, but not for small partial fields. In one embodiment, a partial field may be classified as a small partial field 448 if it has two straight edges and one curved edge. In one embodiment, a partial field may be classified as a small partial field 448 if it has an area of ​​less than 30% of a full field. What is needed is a better way to determine the ICP for these small partial fields 448. In one embodiment, a partial field may be classified as a small partial field 448 if it has three straight edges and one curved edge, and the area of ​​the partial field is less than half of a full field. In one embodiment, the ICP is not the GC for small partial fields, but the ICP is the GC for all partial fields that are not classified as small partial fields.

[0079] Method for determining ICP for small subfields Figure 5 is a flowchart of the ICP determination process 500 for a small subfield 448. Process 500 may include a receiving step S514 in which the processor receives layout information. The layout information may include information about the template, information about a particular small subfield 448, and information about the edges 450 of the patternable region. Process 500 may include a code determination step S516 in which a code (chord) 652 (shown in Figure 6A) is determined that connects the intersecting vertices (A and C) of the small subfield 448 and the edges 450 of the patternable region. The code 652 is a straight line connecting the two vertices (A and C), and when the template 108 is not curved, the mesa edge 210e intersects with the edge 450 of the patternable region.

[0080] Process 500 may include a bisector determination step S518 in which an orthogonal bisector 654 is determined, as shown in Figure 6B. The orthogonal bisector 654 is orthogonal to the code 652 and bisects the code 652 into two equal parts.

[0081] Process 500 may include an ICP range determination step S520 in which an ICP range on the orthogonal bisector 654 is determined, as shown in Figure 6C. In one embodiment, the ICP range may have a width of 1, 3, or 5 mm. In one embodiment, the ICP range may have a width of 8 to 40% of the length of the orthogonal bisector 654 within the small partial field 448. The ICP range is inserted within 1 to 5 mm from the edge 450 of the patternable area, or within 10% of the length of the orthogonal bisector 654 within the small partial field 448. In one embodiment, the ICP range is the width (w) of the substrate edge exclusion zone between the substrate edge and the edge 450 of the patternable area. ee The ICP is inserted from the substrate edge by a width of 1-3 mm plus a safety margin of 2-3 mm. In one embodiment, the width of the ICP range may be on the order of the ICP contact area.

[0082] Process 500 may include an ICP determination step S522 in which the ICP offset is determined, as shown in Figure 6D. The ICP lies on the orthogonal bisector 654 and is within the ICP range. The ICP may be determined with respect to the origin O of the mesa coordinate system. The ICP offset is the ICP offset angle (θ) around the z-axis passing through the center of the mesa. ICP ) and the magnitude of the ICP offset (M ICP ) can be described by. The ICP offset has two components (M ICP,x , and M ICP,y It can also be described by the size of the ICP offset (M ICP ) is the length of the vector connecting the origin O to ICP. ICP offset angle (θ) ICP ) is the direction of the vector with respect to the origin O in the mesa coordinate system.

[0083] Once the ICP is determined in the ICP determination step S522, the ICP may be used during the contact step S304 of the molding process 300. An alternative embodiment may include a control condition determination step S524 in which control conditions are determined that allow the template 108 to first come into contact with the moldable material 124 with an ICP within the ICP range.

[0084] The control condition is the template back pressure (P) applied to the back of the template by the template chuck 118, causing the template 108 to bend. T ) may include. Figure 7A is a diagram of a pump connected to an exemplary template chuck 108 for holding the template 108, the details of which are described in U.S. Patent Publication 2017 / 0165898-A1, which is incorporated entirely herein by reference. The template chuck 118 may include one or more vacuum portions for holding the template 108 and a chamber portion which can be used to curve the template 108, as shown in Figure 7B. By making the pressure in the chamber higher than the ambient pressure on the molding surface 112, the template 108 is curved and the molding surface 112 has a radius of curvature (R) at ICP. T The template has a curvature that can be approximated by ).T This is an approximation of the shape of the molded surface 112 in the ICP. A polynomial (e.g., a quartic polynomial) may be used to approximate the shape of the molded surface 112 in the region of the ICP at initial contact. A finite element model or other simulation model may be used to determine the shape of the molded surface under different control conditions.

[0085] The control condition is the template tilt angle (θ of the template around the x-axis). Tx Rotation) and template tilt angle (θ of the template around the y-axis) Ty This may include rotation, and both of these involve the template control angle (θ) relative to the substrate, as shown in Figure 7C. T ={θ Tx , θ Ty The imprint head 120 may include a plurality of actuators used to position the template 108 relative to the substrate 102, and these actuators may also be used to tilt the molding surface 112 relative to the substrate 102. Figure 7C shows the tilt of the reference surface (front of the template chuck) relative to the substrate 102, which is the same angle as the molding surface 112 when it is not curved.

[0086] The control conditions may include a set of substrate chuck control values ​​supplied to the substrate chuck 104. The substrate chuck 104 may deform the shape of the substrate 102. As shown in Figure 7D, the substrate chuck 104 may be a zone chuck capable of supplying different amounts of positive or negative pressure to different zones (e.g., outer zone 704a, first inner zone 704b, second inner zone 704c, etc.), thereby deforming the substrate by between 1 and 10 μm. For example, positive pressure may be supplied to the first inner zone 704b, while negative pressure may be supplied to the outer zone 704a and the second inner zone 704c. As with the template, the shape of the substrate surface 130 is determined by the radius of curvature (R) of the substrate in ICP. SIt can be roughly represented by ). A polynomial (e.g., a fourth-degree polynomial) may be used to approximate the shape of the molded surface 112 in the ICP region at initial contact. A finite element model or other simulation model may be used to determine the shape of the molded surface under different control conditions.

[0087] Control condition (R T , R S , θ T These parameters may be combined and adjusted to control the position of the ICP on the small partial field 448, as shown in Figure 7E. The control conditions may include additional parameters describing the shape and orientation of the molding surface 112 and the substrate surface 130 in the ICP. The control parameters may include a plurality of control values ​​and / or trajectories (such as pressure, current, voltage, and binary control signals) used to determine the shape and orientation of the molding surface 112 and the substrate surface 130 in the ICP.

[0088] The amount of pressure supplied to the chamber is the ICP and the desired radius of curvature (R) during the filling step S306. T , R S) depends on and can be determined based on the reduction of unfilled defects caused by gases that do not escape during the filling step S306 at a given filling time. The control parameters are limited based on the mechanical properties of the template 108, the substrate 102, and the molding system 100. These limitations prevent the concave surface 244 of the template from contacting the substrate surface 130 or the appliqué surrounding the substrate, and / or the molding surface 112 from contacting the appliqué surrounding the substrate. In alternative embodiments, the ICP is selected within the ICP range based on the limitations of the control parameters. These limitations can be determined experimentally and / or using a finite element model or other simulation method. For example, if both the template and the substrate are flat, the template angle can be calculated using simple trigonometry, as shown in equation (1) below. Once the shape of the curved molding surface 112 and / or the shape of the curved substrate surface 130 are determined, coordinate transformations can be used to determine the limitations. JPEG2023007399000003.jpg17170

[0089] Figure 8A shows the x-axis template tilt (θ) at 0.19 milliradians and 0.76 milliradians. Tx The magnitude of the ICP offset (M) relative to ) ICP This figure shows how the height of the mesa (h) changes with the change in pressure applied to the back of the template. Figure 8B shows how the height of the mesa (h) changes. T ) is the size of the ICP offset (M ICP This diagram shows how it affects ).

[0090] Figures 9A to 9G show the initial contact time (t) in an exemplary embodiment. IC This is a timing diagram showing how the control conditions change over time before and after ). Figure 9A shows the back pressure of the template (P T ) is the initial contact time (t IC ) before the initial template bending pressure (P T1 ) is adjusted to, and then the initial contact time (t IC ) followed by gas release template bending pressure (PT2 This is a timing diagram showing how it is adjusted to the template back pressure (P). T The template is adjusted until it is flat against the substrate.

[0091] Figures 9B to 9C show the initial contact time (t IC ) Before the back pressure of the substrate (P Sa , P Sb , and P Sc This is a timing diagram showing how the pressure is adjusted to curve the substrate, and then how the pressure is adjusted during the curing step S308 so that the substrate and template are parallel to each other.

[0092] Figure 9D is a timing diagram showing how the contact force applied by the template 108 to the moldable material 124 is adjusted during the molding process 300. The contact force is adjusted at the initial contact time (t IC ) may increase after this and then be reduced to the final imprint force before the start of the curing step S308.

[0093] Figures 9E to 9F are timing diagrams showing how the template 108 and substrate 102 are oriented relative to each other. Template control angle (θ) T ) is the initial contact time (t IC It may be increased before the curing step S308, and then decreased during the curing step S308 until the template and substrate are parallel to each other.

[0094] Figure 9G shows the template chuck position (z) in part of the molding process 300. T This is a timing diagram showing how the timing is adjusted. The distance between the template chuck and the substrate is adjusted when the curved template 108 makes initial contact (t IC The material is reduced until it comes into contact with the moldable material 124. Then, during the curing step S308, the template and the substrate are repositioned as they stop curving and become parallel to each other until the remaining thickness of the moldable material between the molding surface 112 and the substrate surface 130 becomes small.

[0095] Figure 10 is a flowchart showing the steps performed during the contact step S304 with respect to a small partial field 448 in an exemplary embodiment. The contact step S304 is performed at an initial contact time (t IC Before ) the control condition is set to the first time (t a This may include an initial control condition setting step S1004a, which adjusts the initial set of control conditions to the template back pressure (P) of the ICP template back pressure. T ), template tilt and inclination (θ T ), first inner ring substrate pressure (P Sb ), outer ring substrate pressure (P Sa ), second inner ring substrate pressure (P Sc ), template check position (z T ) may include, etc. Tilt, template chuck position (z T The initial contact time (t) can be determined using data such as those shown in Figures 8A and 8B. IC The ICP should be adjusted to a value that controls it.

[0096] First time (t a ) after the initial contact time (t IC The template chuck position is adjusted until the molding surface 112 contacts the ICP-mold material 124 at the initial contact time (t IC ) after the second time (t b ) Before that, in back pressure adjustment step S1004b, template chuck 118(t a The back pressure of the ICP template can be adjusted from the ICP template back pressure to the gas escape template back pressure. The gas escape template back pressure may be greater than the ICP template back pressure. The ICP template back pressure is chosen to ensure that initial contact occurs correctly, while the gas escape template back pressure is chosen to ensure that gas can escape as droplets of the formable material expand under the template as more of the template comes into contact with the formable material.

[0097] Second time (tb ) and the third time step (t c In the tilt adjustment step S1004c, the inclination and tilt of the template are adjusted until the template chuck is substantially parallel to the substrate chuck between (t). After the tilt is adjusted, in the pressure adjustment step S1004d, the third time (t) c ) after and the fourth time (t d Prior to this, the substrate chuck pressure and template chuck pressure are adjusted until both the template and the substrate no longer bend. In an alternative embodiment, the pressure adjustment step S1004d is performed simultaneously with the tilt adjustment step S1004c. In another alternative embodiment, the pressure adjustment step S1004d is performed before the tilt adjustment step S1004c.

[0098] Initial contact time (t IC ) and the fourth time (t d Prior to the initial contact time (t), during the force adjustment step S1004e, the force applied by the molding surface 112 to the moldable material is adjusted until it reaches the final force that can be applied during the curing step S308, as shown in Figure 9D. IC ) after and the fourth time (t d Before that, during the template position adjustment step S1004f, the template chuck position (z) relative to the substrate chuck is adjusted until the set residual thickness of the moldable material is formed between the molding surface and the substrate surface. T ) will be adjusted.

[0099] Further modifications and alternative embodiments of various aspects will be apparent to those skilled in the art upon consideration of this description. Therefore, this description should be interpreted as illustrative only. It should be understood that the forms shown and described herein should be interpreted as examples of embodiments. Elements and materials can be replaced with those illustrated and described herein, parts and processes can be reversed, and certain features can be used independently, all of which will be apparent to those skilled in the art after benefiting from this description.

Claims

1. receiving information about a partial field of a substrate and an edge of a patternable area of ​​the substrate; determining a code connecting intersection vertices of said subfield and said edge; bisecting the chord and determining the coordinates of a bisector perpendicular to the chord; determining an initial contact point range on the bisector where the template and the moldable material on the substrate come into contact with each other; contacting the moldable material of the partial field with a template at an initial contact point within the initial contact point range; A method comprising:

2. 2. The method of claim 1, wherein the area of ​​the partial field is less than 30% of the area of ​​the full field of the substrate.

3. The method of claim 1 , further comprising determining control conditions that allow the template to initially contact the moldable material at the initial contact point.

4. The method of claim 3 , wherein the control conditions include pressure applied to a back surface of the template to cause the template to bend.

5. The method of claim 3 , wherein the controlled condition includes a tilt of the template relative to the substrate.

6. 4. The method of claim 3, wherein the control conditions include a set of control values ​​supplied to a substrate chuck, the substrate chuck deforming the shape of the substrate.

7. The method of claim 1 , wherein the edge of the patternable area is set inside an edge of a substrate.

8. the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, the plurality of partial fields being classified into a plurality of partial field categories; 2. The method of claim 1, further comprising determining an initial touch point for a particular subfield of the plurality of subfields based on a subfield category.

9. The method of claim 8 , wherein the subfield category is based on the shape of the subfield.

10. 10. A method for forming a film on a substrate with a plurality of fields, wherein a subset of the plurality of fields classified as partial fields are formed using the method of claim 1, comprising: adjusting control conditions so that after initial contact, the template contacts the entirety of the formable material in a particular field; exposing the formable material beneath the template to actinic radiation after the template and the substrate are substantially parallel to one another; separating the template from the moldable material; The method further comprising:

11. A method for producing an article from a substrate on which a film has been formed by the method of claim 10, comprising: processing the substrate; forming the article from the processed substrate; A method comprising:

12. 11. The method of claim 10, further comprising increasing the template back pressure used by the template chuck to bend the template after the initial contact.

13. 10. The method of claim 1, wherein the received information includes a layout of a plurality of fields.

14. one or more memories; one or more processors; The one or more processors: receiving information regarding a template, a partial field of a substrate, and an edge of a patternable area of ​​the substrate; determining a code connecting intersection vertices of the subfield and the edge; bisecting the chord and determining the coordinates of a bisector perpendicular to the chord; determining an initial contact point range on the bisector where the template and the moldable material on the substrate come into contact with each other; sending instructions to a molding system to contact a template with the moldable material of the partial field on the substrate at an initial contact point within the initial contact point range.

15. The system of claim 14 , wherein the one or more processors determine control conditions that allow the template to initially contact the moldable material at the initial contact point.

16. a template chuck that applies pressure to the back surface of the template to bend the template; The system of claim 15 , wherein the control condition includes the pressure.

17. a plurality of actuators for adjusting the tilt of the template relative to the substrate; The system of claim 15 , wherein the control condition includes the tilt.

18. Further, a substrate chuck is provided to deform the shape of the substrate, 16. The system of claim 15, wherein the control conditions include a set of control values ​​supplied to the substrate chuck.

19. the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, the plurality of partial fields being classified into a plurality of partial field categories; 15. The system of claim 14, wherein the one or more processors determine an initial touch point for a particular subfield of the plurality of subfields based on a subfield category.

20. 20. The system of claim 19, wherein the partial field category is based on the shape of the partial field.

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