Multiple sputtering target
Patent Information
- Application Number
- JP2022097797
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2021-08-04
- Filing Date
- 2022-06-17
- Publication Date
- 2025-06-24
AI Technical Summary
Existing magnetron sputtering systems are limited to coating large area substrates with a single material per pass, requiring vacuum chamber re-evacuation for material changes, which is time-consuming and costly, and existing multi-magnetron systems are bulky and expensive.
A multiple sputtering target with a polygonal support tube having multiple outer surfaces and a magnet bar within a free space, allowing sequential sputtering of different materials without breaking the vacuum by rotating the support tube at predetermined angular increments.
Enables continuous coating of substrates with multiple materials using less space and effort, maintaining vacuum integrity, reducing costs, and increasing flexibility and service life of the equipment.
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Abstract
Description
Technical Field
[0001] The present invention relates to a multi - sputtering target for a magnetron device having a cylindrical magnetron for coating a substrate that is linearly or circularly transported through a vacuum chamber or a stationary substrate, wherein the cylindrical magnetron is supported by an end block or other drive unit and there is a magnet bar inside the cylindrical magnetron.
Background Art
[0002] A generally known cylindrical magnetron has a magnet bar that does not move positionally inside it, and is supported cantilever - style on a magnetron end block or is further rotatably supported on an opposing support, and the magnetron end block provides a rotational drive unit for the cylindrical magnetron while providing an energy source and necessary cooling water for the magnetron.
[0003] From Patent Document 1, such a type of magnetron device with a rotatable cylindrical magnetron has become clear. The end block incorporates a rotational drive unit for the cylindrical target, and on the other hand, incorporates an essential energy supply unit for igniting and maintaining plasma between the coated substrate and the cylindrical magnetron. The cylindrical target consists of a support tube and a target material placed outside.
[0004] With such a type of magnetron device, a large - area substrate moving across in front of the magnetron can be coated in a vacuum chamber. What is particularly inconvenient is that during one pass, only one type of material can be sputtered, and in order to sputter another material, after breaking the vacuum in the vacuum chamber, another cylindrical target must be installed and the vacuum chamber must be evacuated again.
[0005] One possible workaround might be to arrange multiple cylindrical magnetrons in a series, front to back, within a single vacuum chamber, but this would naturally lead to a larger system and a significant increase in effort and cost.
[0006] Further cylindrical magnetrons equipped with an internally located magnet system are also revealed in Patent Document 2. This cylindrical magnetron mainly consists of a tube-shaped (cylindrical) target support section and an outer target consisting of numerous flat target plates, the numerous target plates being placed tangentially on the tubular target support section, forming a gapless polygonal target surface.
[0007] To carry out the improvements, that is, to enable the continuous sputtering of different materials, commercially available "target revolvers" became available. However, in this case, multiple complete magnetrons are incorporated at regular intervals around the central axis, and these magnetrons require a relatively large assembly space due to the generation of the necessary magnetic field, anode, necessary cooling, and power connections, and as a result of their elaborate structure, they are quite expensive.
[0008] To enable the sputtering process, the “target revolver” must be rotated in fixed angular steps, depending on the number of magnetrons installed, until the desired magnetron is positioned opposite the substrate to be coated, allowing plasma to be ignited between the magnetron and the substrate. The advantage of such a “target revolver” is that different materials can be sputtered within the same apparatus. [Prior art documents] [Patent Documents]
[0009] [Patent Document 1] German Patent Application Publication No. 102008048785 [Patent Document 2] International Publication No. 2003 / 081634 [Overview of the project] [Problems that the invention aims to solve]
[0010] The present invention aims to provide a multi-stage sputtering target used to continuously coat substrates, which are transported linearly or along a circular orbit through a vacuum chamber, with a large number of selectable materials by magnetron sputtering with minimal effort. [Means for solving the problem]
[0011] This objective is achieved in a multi-sputtering target of the type described at the beginning, provided with at least one polygonal support tube having a angular cross-sectional shape, the polygonal support tube having multiple longitudinally extending outer surfaces for receiving a target, a free space portion existing within at least one polygonal support tube, the free space portion extending longitudinally through the polygonal support tube, and within the free space portion, a magnetic bar for forming a plasma cloud exists outside the polygonal support tube at an operational position on the front (front) (vor) of the target selectable by rotation of the polygonal support tube, and a moving or stationary substrate is located at a predetermined distance from the front of the plasma cloud.
[0012] In an advanced form of the present invention, targets made of the same or different materials are present on each of the outer surfaces of the support tube. The latter makes it possible to continuously sputter different materials onto the same substrate or onto multiple similar substrates loaded at the same time without breaking the vacuum.
[0013] The target is preferably fixed to its outer surface by adhesive or by other mechanical means.
[0014] In yet another aspect of the present invention, the polygonal support tube can accommodate a corresponding number of targets on the polygonal support tube by having a triangular, quadrilateral, pentagonal, hexagonal, heptagonal, or octagonal cross-sectional shape.
[0015] Finally, the polygonal support tube is rotatable in predetermined angular increments so that targets can be individually positioned between the magnetic bar and the plasma cloud present in front of the magnetic bar.
[0016] In yet another aspect of the present invention, the magnetic bar is fixedly positioned in the upper part of the free space, above the axis of symmetry of the free space.
[0017] Alternatively, the magnetic bar may be fixedly positioned below the axis of symmetry of the free space on the lower side, or fixedly positioned laterally to the axis of symmetry of the free space on the side. This allows known sputtering methods, namely the sputter-up method, sputter-down method, and sputter-side method, to be implemented in a particularly simple manner by the appropriate rotation or arrangement of the magnetic bar, even at an angle to the horizontal or vertical.
[0018] In a special modification of the present invention, two magnetic bars are fixedly arranged in the free space, facing each other, so that two plasma clouds are formed in front of each target, one above and one below. This allows the sputter-up method and the sputter-down method to be applied simultaneously to the same or different substrates.
[0019] To make better use of the target, the polygonal support tube can move back and forth around a fixed magnetic bar.
[0020] In a further development of the present invention, the magnet bars located in the free space can be rotated in predetermined angular increments relative to the polygonal support tube, and as a result, the arrangement of the magnet bars required for various sputtering methods can be adjusted particularly easily.
[0021] Finally, the polygonal support tube is connected via a connecting member to a magnetron end block that is normally (commercially) available for driving the rotation of the support tube and for supplying energy and cooling water to the magnet bar.
[0022] The multiple sputtering target according to the present invention can be equally used for performing the sputter-up method, the sputter-side method, or the sputter-down method, or for coating a substrate mounted in a horizontal or vertical or obliquely diagonal direction.
[0023] In a special form of the present invention, two polygonal support tubes each comprise a magnet bar present within their free space portion and a target present on their outer surface, the distance between the magnet bar and the corresponding target being the same or different, and are arranged in a bipolar type array adjacent to each other in parallel within a common vacuum chamber with a common MF power supply. By simply arranging targets made of different materials, that is, by rotating the two polygonal support tubes in predetermined angular increments until the desired target is placed on each magnet bar, almost any combination of materials can be created.
[0024] In a further development aspect of the present invention, a polygonal support tube having a magnet bar present within its internal free space portion and a conventional cylindrical magnetron or planar magnetron are arranged adjacent to each other in parallel in a bipolar type array within a common vacuum chamber with a common MF power supply. Here too, a combination of a number of materials can be created on the substrate, and at that time, materials that can originally be used only with a planar magnetron can also be included.
[0025] By using the polygonal support tube of the multiple sputtering target that can be rotated in predetermined angular increments, a plurality of different or the same materials can be continuously sputtered one after another with significantly less effort and deposited on a single substrate.
[0026] For multi - connected sputtering, for this purpose, according to the present invention, instead of the conventional elongated cylindrical target, an elongated polygon - shaped support tube with an angular cross - sectional shape is used, and on these support tubes, targets made of different or the same materials are placed as sputtering sources on the outer surface extending in the longitudinal direction.
[0027] The fixing of the target, which serves as a material source for the coating formed on the substrate during sputtering, preferably on the outer surface of the support tube of the same size, can be carried out by means of a conventional clamp rail (Klemmschiene) (claw (Pratzen)) or adhesion.
[0028] The support tube can have a number of cross - sections, such as triangular, quadrilateral, pentagonal, hexagonal, heptagonal, or even octagonal, and can be covered with targets made of a corresponding number of different materials. Special shapes are also possible, such as a support tube with a triangular or quadrilateral cross - sectional shape, with three or four different targets and chamfered edges.
Advantages of the Invention
[0029] Advantages of the invention: - It is possible to use different or the same target materials in one coating process without breaking the vacuum chamber during target replacement or magnetron replacement. - Multiple coatings with the same target material are also possible, which is advantageous for increasing the service life of the deposition layer (Anlage). - It is possible to use two, three, or up to eight targets 2 made of different materials on the polygonal support tube 1. - The required space can be extremely reduced. - The target material can be "exchanged" by continuously rotating the polygonal support tube 1 in predetermined angular increments. - The standard magnetic field of a cylindrical magnetron with a standard magnet bar can be used. - Only the same cooling as in the case of a cylindrical magnetron is required. -Standard cylindrical target end blocks can be used as drive and receiver parts for polygonal support pipes. -Requires only one energy supply unit. - The target can be used with existing standard end blocks and standard magnet bars of a typical cylindrical cathode sputtering source. -When using bipolar arrays, the possibility of various material mixtures arises. - For example, by mounting the same target and continuously rotating the sputtered target, a long lifespan for the equipment can be achieved. - This enables high flexibility in coating with different materials. - The multi-target system according to the present invention can be incorporated into existing cylindrical magnetron systems, resulting in relatively low investment costs for customers. - The multi-sputtering targets according to the present invention can be used without problems in a parallel, adjacent array with a common MF power supply, together with conventional cylindrical or planar targets, which increases the flexibility of the system.
[0030] The present invention will be described in detail below with reference to examples. [Brief explanation of the drawing]
[0031] [Figure 1] This figure shows a multi-stage sputtering target consisting of a support tube with a polygonal cross-sectional shape, equipped with a triple-target system on its outer surface that can rotate in predetermined angle increments, and a magnetic bar inside the support tube with three targets, along with a plasma cloud roughly shown in front of each target located above it, and a substrate passing over the plasma cloud. [Figure 2a] This figure shows a multi-target sputtering target as a four-target system, equipped with a polygonal support tube similar to that in Figure 1, but with four targets. [Figure 2b]This figure shows a multi-target sputtering target with a polygonal support tube similar to that in Figure 1, which has a four-target system, but with chamfered corners. [Figure 3] This figure shows a multi-target sputtering target equipped with polygonal support tubes similar to those in Figure 1, which features a five-target system. [Figure 4] This figure shows a multi-target sputtering target equipped with polygonal support tubes similar to those in Figure 1, which features a six-target system. [Figure 5] This figure shows a multi-target sputtering target equipped with polygonal support tubes similar to those in Figure 1, which features an 8-target system. [Figure 6] This is a schematic side view of the polygonal support tube of a multi-stage sputtering target attached to an end block. [Figure 7] This figure shows a multi-stage sputtering target equipped with polygonal support tubes in which magnetic bars are positioned in the lower region of the free space inside. [Figure 8] This figure shows a multi-stage sputtering target equipped with polygonal support tubes in which magnetic bars are positioned laterally within the free space inside. [Figure 9] This diagram shows a multi-sputtering target equipped with polygonal support tubes, in which two magnetic bars are positioned as shown in the figure, one on the upper side and the other on the lower side within the free space, so that two plasma clouds are formed in front of the corresponding target on the upper and lower sides, and the substrate can pass through each of them. [Figure 10] This diagram shows a parallel arrangement of two multi-sputtering targets equipped with a common MF power supply for depositing the same material onto a substrate. [Figure 11] This figure shows a parallel arrangement of two multi-sputtering targets equipped with a common MF power supply for depositing different materials onto a substrate. [Figure 12] This diagram shows a parallel arrangement of a multi-sputtering target with a common MF power supply and a cylindrical magnetron for depositing different materials onto a substrate. [Figure 13] This figure shows two parallel arrangements of four-bar sputtering targets, one in a symmetrical configuration and the other in an asymmetrical configuration, with different distances between the magnet bar and the target. [Modes for carrying out the invention]
[0032] A special feature of the present invention is that the multi-sputtering target in the form of a polygonal support tube 1 has multiple outer surfaces 3 for receiving a target 2, and a magnet bar 4 is located inside the polygonal support tube 1 within a free space 5. The free space 5 extends longitudinally through the center of the support tube 1 and preferably has a circular cross-section.
[0033] Naturally, the coatings described later using various modifications of the multi-sputtering target equipped with polygonal support tubes 1 must be fabricated under vacuum in a vacuum chamber (not shown).
[0034] Figure 1 shows a polygonal support tube 1 for a multi-target sputtering target equipped with a triple-target system that is rotatable in predetermined angular increments and has three targets 2, the targets being individually fixed on each outer surface 3 of the support tube 1 which has a triangular cross-sectional shape, although the targets 2 may be made of the same material or preferably different materials.
[0035] Inside the support tube 1, there is a fixed magnetic bar 4 that does not move in position, and this is positioned on the upper side of the free space 5, that is, above the axis of symmetry of the free space. The magnetic bar 4 generates two plasma clouds 6 in front of the target 2, which is located on the support tube 1, on the upper side. Using these plasma clouds, the substrate 7 that is on or passing over the plasma clouds 6 is coated by the sputtering method with material sputtered from the target 2.
[0036] As is well known, the sputtering method has the advantage that sputtered particles, which are mainly accelerated upwards, are deposited onto the substrate 7.
[0037] Figure 2a shows a polygonal support tube 1 with a rectangular cross-section, having four longitudinally extending outer surfaces 3, each of which a target 2 is fixed. Within the free space 5, a magnet bar 4 exists above the axis of symmetry of the free space.
[0038] Figure 2b shows a multi-stage sputtering target equipped with polygonal support tubes 1, which have a similar configuration to Figures 1 and 2a, but with four longitudinally extending outer surfaces 3, where the corners 3.1 of the polygonal support tubes 1 are chamfered.
[0039] This type of chamfered corner can also be basically achieved in the triple target system shown in Figure 1.
[0040] Figure 3 shows a multi-target sputtering target with a polygonal support tube 1 that has the same configuration as in Figure 1, but with a five-target system having five longitudinally extending support tubes 1 with outer surfaces 3 for receiving up to five targets 2.
[0041] Furthermore, Figure 4 shows a multi-target sputtering target with a polygonal support tube 1 equipped with a six-target system having six longitudinally extending outer surfaces 3 for receiving a total of six targets 2, although it has the same configuration as in Figure 1.
[0042] Figure 5 shows a multi-stage sputtering target with a polygonal support tube 1 equipped with an 8-stage target system, which has the same configuration as in Figure 1, but with eight longitudinally extending outer surfaces 3, each receiving one target 2.
[0043] In most of the above-described modifications, the magnet bar 4 is located above the axis of symmetry of the free space 5, and the free space 5 extends to the center through the support pipe 1.
[0044] If this arrangement is not adopted, it may be useful in cases where the polygonal support tube 1 has a particularly large diameter, so as to prevent the distance between the magnet bar 4 inside the polygonal support tube 1 and the target 2 on the outer surface 3 of the support tube 1 from becoming too large, which could weaken the intensity of the plasma cloud 7. In this case, the aforementioned distance would be reduced.
[0045] The different hatching patterns on the target 2 fixed to the outer surface 3 of the support tube 1 each symbolize a different material. To select the material to be sputtered, the support tube 1 only needs to be rotated in the same angle increments until the desired target 2 is positioned above the magnet bar 4 on the upper side. Then, the required plasma cloud 6 is generated in front of the target 2, which is located on the upper side, by the action of the magnet bar 4.
[0046] Polygonal support tubes 1 with different cross-sectional shapes can be operated via connecting members 9 using commercially available magnetron end blocks 8, and a conventional cylindrical target-type immobile magnet bar 4 can be used inside the support tube 1. Figure 6 shows a side view of a hexagonal support tube 1 with a target 2 on its outer surface 3.
[0047] In particular, the long support tube 1 can be supported at its free end by an opposing support (not shown) in order to minimize deflection.
[0048] The sputtering plasma required for sputtering is generated near the target surface due to the magnetic field created by the magnet 4. By rotating the support tube 1 on which the target 2 is mounted, different or the same material can be sputtered successively to the side facing the magnet bar 3—depending on how the target 2 is distributed on the outer surface 3 of the support tube 1—and a corresponding coating can be applied to the passing substrate 7. Furthermore, by repeatedly moving the polygonal support tube 1 or the magnet bar 4 back and forth, the target erosion area can be expanded, thereby allowing the target 2 to be used more effectively.
[0049] Figures 1 to 5 show a sputtering apparatus according to the present invention operating by the sputter-up method. This means that particles sputtered from target 2 move upward toward the substrate 7 to be coated, which is moving above the plasma cloud 6.
[0050] Other sputtering methods, such as the sputter-down method, can be easily implemented by using a multi-sputtering target combined with the polygonal support tube 1 described above, and rotating the magnet bar 4 180° downward around a virtual pivot axis so that the magnet bar 4 is below the axis of symmetry in the free space section 5. Alternatively, the magnet bar 4 can be positioned downward within the free space section 5 so that a plasma cloud 6 is formed in front of the target 2 located on the support tube 1 below.
[0051] In this case, particles ejected from target 2 by sputtering are deposited onto the substrate 7 to be coated as it passes beneath the plasma cloud 6. (Figure 7)
[0052] When sputtering side deposition, that is, deposition on the substrate 7 on the side, must be performed, the magnetic bar 4 should be brought to a position approximately 90° to the side so that a plasma cloud 6 is formed in front of the target 2 positioned on the side. In this case, the substrate 7 to be coated can be positioned perpendicularly in front of the plasma cloud 6 on the side, or it can pass through it. (Figure 8)
[0053] A special embodiment of the present invention is shown in Figure 9. The polygonal support tube 1 described herein comprises a central free space 5, within which two magnet bars 4, 4.1 are arranged above and below the axis of symmetry, respectively. In this way, two plasma clouds 6, 6.1 can be formed on the upper and lower sides, respectively, in front of the corresponding target 2, and substrates 7, 7.1 can be passed through or placed therein. A prerequisite for this embodiment of the present invention is that the polygonal support tube 1 has an even number of outer surfaces 3.
[0054] Figures 10 and 11 show special embodiments that utilize multiple multi-sputtering targets or a combination of conventional cylindrical magnetrons to enable bipolar processes to be performed in a common vacuum chamber. This significantly improves the flexibility of the sputtering system.
[0055] Figure 10 shows a parallel arrangement of two multi-sputtering targets according to the present invention, equipped with a common MF power supply 10, for which the same material is deposited on a substrate 7.
[0056] Figure 11 shows two multi-sputtering targets with a common MF power supply in essentially the same parallel configuration, but used to deposit different materials on a substrate. Here, the polygonal support tube 1 on the right side of the figure is rotated to the coating position with another target 2 facing upwards. This makes it possible to deposit combinations of different materials on the substrate 7.
[0057] Figure 12 shows a special modification in which a multi-sputtering target according to the present invention, equipped with a common MF power supply 10, and a conventional cylindrical magnetron 11 are operated in parallel simultaneously to deposit different materials on a substrate 7. The cylindrical magnetron 11 has a central free space 5 in which a magnet bar 4 is located, and the cylindrical target 12 surrounds the free space.
[0058] Finally, Figure 13 shows a parallel arrangement of two multi-sputtering targets, each having a polygonal support tube 1 and a magnet bar 4 located within a free space 5, and equipped with a common MF power supply, for depositing the same material on a substrate 7. The multi-sputtering target on the left in the figure is configured symmetrically, while the multi-sputtering target on the right is configured asymmetrically. This allows for different distances between the magnet bar 4 and the target 2. In this way, sputtering can be performed with magnetic fields of different strengths.
[0059] The present invention allows for the combined use of multiple multi-sputtering targets with a conventional planar magnetron (not shown) within a common vacuum chamber equipped with a common MF power supply. Even with this combination, materials can be deposited in combination onto the substrate as they pass through.
[0060] Instead of the polygonal support tubes shown in Figures 7 to 9, which have four outer surfaces 3 and chamfered corners 3.1, the polygonal support tube 1 may have the cross-sectional shape shown in other drawings.
[0061] The advantage of this configuration of multi-stage sputtering targets is that it makes it possible to perform sputter-up and sputter-down methods simultaneously.
[0062] As the magnetic bar 4, a standard magnetic bar or any other suitable magnetic bar can be used in the free space 5.
[0063] Multiple circular connecting members 9 necessary for the operation in the support bearing section (Stuetzlager) and on the magnetron end block 8 can be attached to the support pipe 1 by welding, or appropriate connecting members 9 as adapters can be used (Figure 6).
[0064] While it is assumed that the different targets 2 on the polygonal support tube 1 are rotated at a precise angle to be moved to the correct position, i.e., parallel to the substrates 7, 7.1 to be coated, other suitable housing devices equipped with position adjustment motors can be used instead of the commercially available magnetron end block 7.
[0065] It is also conceivable to repeatedly move a polygonal support tube 1 of multiple targets around a fixed magnetic bar. [Explanation of symbols]
[0066] 1 Support tube 2 Targets 3 External surface 3.1 Chamfered corners 4 Magnetic Bars 4.1 Magnetic Bar 5 Free space part 6. Plasma cloud 6.1 Plasma Cloud 7 circuit boards 7.1 Circuit board 8 Magnetron End Blocks 9 Connecting Members 10MF power supply 11 Cylindrical Magnetron 12 Cylindrical target
Claims
1. A multi - sputtering target for a magnetron device having a cylindrical magnetron for coating a substrate conveyed linearly or on a circular orbit through a vacuum chamber or a stationary substrate, wherein the cylindrical magnetron is supported by an end block or other drive unit and there is a magnet bar inside the cylindrical magnetron. In the multi - sputtering target, at least one polygonal support tube (1) having an angular cross - sectional shape is provided, and the polygonal support tube has a plurality of outer surfaces (3) extending in the longitudinal direction for receiving the target (2), there is a free - space portion (5) inside at least one polygonal support tube (1), the free - space portion extends longitudinally through the polygonal support tube, and inside the free - space portion, there is a magnet bar (4) for forming a plasma cloud (6) outside the polygonal support tube (1) at the front working position of the target (2) selectable by the rotation of the polygonal support tube, the moving or stationary substrate (7) is present at a predetermined distance in front of the plasma cloud (6), characterized in that it is a multi - sputtering target.
2. In the multi - sputtering target according to Claim 1, a target (2) is present on each of the outer surfaces (3) of the polygonal support tube (1), and the targets (2) are made of the same or different materials, characterized in that it is a multi - sputtering target.
3. In the multi - sputtering target according to Claim 1, the polygonal support tube (1) has a cross - sectional shape of a triangle, quadrilateral, pentagon, hexagon, heptagon or octagon, characterized in that it is a multi - sputtering target.
4. In the multi - sputtering target according to Claim 1, the polygonal support tube (1) is rotatable at a predetermined angular pitch so that the target (2) can be individually arranged between the magnet bar (4) and the plasma cloud (6) present in front of the magnet bar, characterized in that it is a multi - sputtering target.
5. In the multi - sputtering target according to any one of Claims 1 to 4, the magnet bar (4) is fixedly arranged above the free - space portion (5) inside the free - space portion, above the symmetry axis of the free - space portion, characterized in that it is a multi - sputtering target.
6. In the multi - sputtering target according to any one of Claims 1 to 4, The magnet bar (4) is fixedly arranged below the symmetry axis of the free space part (4) on the lower side within the free space part (4). A multi - connected sputtering target characterized by this.
7. In the multi - connected sputtering target according to any one of Claims 1 to 4, the magnet bar (4) is fixedly arranged laterally within the free space part (5) to the side of the symmetry axis of the free space part (5). A multi - connected sputtering target characterized by this.
8. In the multi - connected sputtering target according to any one of Claims 1 to 4, within the free space part (5), two magnet bars (4, 4, 1) that exist opposite to each other are fixedly arranged so that plasma clouds (6, 6.1) exist in front of each target (2) on the upper and lower sides respectively. A multi - connected sputtering target characterized by this.
9. In the multi - connected sputtering target according to any one of Claims 1 to 4, the polygonal support tube (1) can move back and forth repeatedly around the fixed magnet bar (4). A multi - connected sputtering target characterized by this.
10. In the multi - connected sputtering target according to any one of Claims 1 to 4, the magnet bar (4) can rotate around the virtual axis within the free space part (5) at arbitrary angular increments with respect to the polygonal support tube (1). A multi - connected sputtering target characterized by this.
11. In the multi - connected sputtering target according to any one of Claims 1 to 4, the polygonal support tube (1) is connected via a connecting member (9) to a commonly available magnetron end block (8) for driving the rotation of the support tube (1) and for supplying energy and cooling water to the magnet bar (4). A multi - connected sputtering target characterized by this.
12. A method of using the multi - connected sputtering target according to any one of Claims 1 to 4 to perform a sputter - up method, a sputter - side method, or a sputter - down method for coating a substrate.
13. In the multi - connected sputtering target according to any one of Claims 1 to 4, Two polygonal support tubes (1) are provided with a magnet bar (4) existing in the free space part (5) and a target (2) existing on the outer surface (3), the target having the same or different distances between the magnet bar (4) and the corresponding target (2). The two polygonal support tubes are arranged adjacent to each other in a bipolar array in a common vacuum chamber with a common MF power supply (10). A multi-connected sputtering target characterized by this.
14. In the multi-connected sputtering target according to any one of Claims 1 to 4, A polygonal support tube (1) provided with a magnet bar (4) existing in the free space part (5) and a cylindrical magnetron (11) or a planar magnetron are arranged adjacent to each other in a bipolar array in a common vacuum chamber with a common MF power supply (10). A multi-connected sputtering target characterized by this.