Simulation device and program

Abstract

To provide an advantageous simulation technique to reduce a time required to determine a parameter set for a film formation process.SOLUTION: A simulation device that predicts the behavior of a curable composition during film formation processing includes a processing unit that performs a behavior calculation of the curable composition using a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method. The processing unit executes behavior calculation of the curable composition by a second calculation method by applying each of a plurality of temporary parameter sets of the film formation processing, determines a parameter set whose behavior calculation result satisfies a predetermined evaluation criterion among each of the plurality of temporary parameter sets, and calculates the behavior of the curable composition using the first calculation method by applying the determined parameter set.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a simulation device and a program. [Background technology]

[0002] There is a film-forming technique in which a curable composition is placed on a substrate, the curable composition is brought into contact with a mold, and the curable composition is cured to form a film made of the curable composition on the substrate. Such a film-forming technique is applied to an imprint technique or a planarization technique. In the imprint technique, a mold having a pattern area is used, and the curable composition on the substrate is brought into contact with the pattern area of ​​the mold to cure the curable composition, thereby transferring the pattern of the mold to the curable composition on the substrate. In the planarization technique, a mold having a flat surface is used, and the curable composition on the substrate is brought into contact with the flat surface to cure the curable composition, thereby forming a film having a flat upper surface.

[0003] The curable composition is placed in the form of droplets on the substrate, and then the mold is pressed against the droplets of the curable composition. As a result, the droplets of the curable composition on the substrate spread to form a film of the curable composition. At this time, it is important to form a film of the curable composition with a uniform thickness and to ensure that no air bubbles remain in the film. To achieve this, the method and conditions for placing the droplets of the curable composition and pressing the mold against the curable composition are adjusted. When such adjustments are made by trial and error using an apparatus, it requires a huge amount of time and money. Therefore, it is desirable to use a simulator that supports such adjustments.

[0004] Patent Document 1 describes an advantageous simulation method for calculating the behavior of a curable composition in a shorter time in a process for forming a film of the curable composition. A computational grid consisting of multiple computational elements is defined so that multiple droplets of the curable composition fit into one computational element, and the behavior of the curable composition in each computational element is calculated according to a model corresponding to the state of the curable composition in each computational element, thereby realizing high-speed calculation.

[0005] In this way, the increased speed of calculations allows simulations to be actively used for adjustments, reducing the effort of trial and error using actual equipment. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2020-123719 A Summary of the Invention [Problem to be solved by the invention]

[0007] In a film forming apparatus such as an imprint apparatus, there is a process of determining the amount and arrangement of droplets (drops) of the curable composition to be supplied to a substrate as a drop recipe before a mass production process. In order to check whether the drop recipe is good or not, an operation is performed in which actual imprinting is performed to check for insufficient filling or seepage of the curable composition. In order to determine the drop recipe, this confirmation operation is usually performed multiple times while changing the parameters of the drop recipe.

[0008] In order to reduce the number of confirmation operations, there is a method of determining a drop recipe using simulation. Since the quality of a drop recipe can be predicted by calculation without actually performing imprinting, the number of imprints is reduced, and the time required to determine a parameter set, which is a collection of imprint conditions, is shortened.

[0009] The procedure for determining the drop recipe through filling simulation involves multiple loops of creating the next calculation conditions by referencing the calculation results and then performing the calculation again, so if the search range for placement and amount is widened, the number of calculations increases and it takes time to determine the recipe.

[0010] Conventional filling simulations mainly involve coupled analysis of the fluid structure between the composition flow and mold deformation. In this analysis, calculations are performed taking into account multiple physical phenomena in order to increase calculation accuracy. Coupled calculations that take into account multiple physical phenomena tend to take longer to calculate each time. When determining the merits of drop placement and quantity, it is not always necessary to perform highly accurate calculations for every calculation, so it is desirable to use a simplified calculation method to shorten the time required for each calculation.

[0011] The present invention provides an advantageous simulation technique for shortening the time required to determine a parameter set for a film formation process. [Means for solving the problem]

[0012] According to one aspect of the present invention, there is provided a simulation device for predicting behavior of a curable composition in a film formation process in which a mold is brought into contact with multiple droplets of the curable composition arranged on a substrate to form a film of the curable composition on the substrate, the simulation device having a processing unit that performs a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method in which the calculation time is reduced compared to the first calculation method, the processing unit applying each of a plurality of tentative parameter sets for the film formation process to perform the behavior calculation of the curable composition by the second calculation method, determining a parameter set from each of the plurality of tentative parameter sets such that the result of the behavior calculation satisfies a predetermined evaluation criterion, and applying the determined parameter set to perform the behavior calculation of the curable composition by the first calculation method. Effect of the Invention

[0013] According to the present invention, it is possible to provide an advantageous simulation technique for shortening the time required to determine a parameter set for a film formation process. [Brief description of the drawings]

[0014] [Figure 1] FIG. 2 is a diagram showing the configuration of a film forming apparatus and an information processing apparatus. [Diagram 2] FIG. 2 is a diagram for explaining two calculation modes of a simulation program. [Diagram 3] 4 is a flowchart illustrating a calculation procedure of a simulation in the first embodiment. [Figure 4] FIG. 11 is a diagram showing an example of a GUI according to the second embodiment. [Diagram 5] 13 is a flowchart illustrating a calculation procedure of a simulation in the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0016] First Embodiment 1 is a schematic diagram showing the configuration of a film-forming apparatus IMP and an information processing apparatus 1 in an embodiment of the present invention. The film-forming apparatus IMP performs a film formation process in which a mold M is brought into contact with a plurality of droplets of a curable composition IM arranged on a substrate S, and a film of the curable composition IM is formed in the space between the substrate S and the mold M. The film-forming apparatus IMP may be configured as, for example, an imprint apparatus or a flattening apparatus. Here, the substrate S and the mold M are interchangeable, and a film of the curable composition IM may be formed in the space between the mold M and the substrate S by bringing the plurality of droplets of the curable composition IM arranged on the mold M into contact with the substrate S.

[0017] In the imprinting apparatus, a mold M having a pattern is used to transfer the pattern of the mold M to the curable composition IM on the substrate S. In the imprinting apparatus, a mold M having a pattern region PR in which a pattern is provided is used. In the imprinting apparatus, the curable composition IM on the substrate S is brought into contact with the pattern region PR of the mold M as an imprinting process, the curable composition IM is filled in the space between the region of the substrate S where the pattern is to be formed and the mold M, and then the curable composition IM is cured. As a result, the pattern of the pattern region PR of the mold M is transferred to the curable composition IM on the substrate S. In the imprinting apparatus, for example, a pattern made of a cured product of the curable composition IM is formed in each of a plurality of shot regions of the substrate S.

[0018] In the planarization apparatus, a mold M having a flat surface is used as a planarization process, and a film having a flat upper surface is formed by bringing the curable composition IM on the substrate S into contact with the flat surface of the mold M and curing the curable composition IM. In the planarization apparatus, when a mold M having dimensions (sizes) covering the entire area of ​​the substrate S is used, a film made of a cured product of the curable composition IM is formed over the entire area of ​​the substrate S. In this embodiment, in order to provide a specific example, a case will be described in which the film forming apparatus IMP is an imprint apparatus.

[0019] As the curable composition, a material that is cured by applying energy for curing is used. As the energy for curing, electromagnetic waves, heat, etc. are used. The electromagnetic waves include, for example, light having a wavelength selected from the range of 10 nm to 1 mm, specifically, infrared rays, visible light, ultraviolet rays, etc. In this way, the curable composition is a composition that is cured by irradiation with light or heating. The photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, a polymer component, etc. The viscosity of the curable composition (viscosity at 25°C) is, for example, 1 mPa·s to 100 mPa·s.

[0020] The substrate may be made of, for example, glass, ceramics, metal, semiconductor, or resin. If necessary, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate may be made of, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

[0021] In this specification and the accompanying drawings, directions are shown in an XYZ coordinate system in which the direction parallel to the surface of the substrate S is the XY plane. The directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are the X direction, the Y direction, and the Z direction, respectively, and the rotation around the X-axis, the Y axis, and the Z axis are θX, θY, and θZ, respectively. Control or drive regarding the X-axis, Y-axis, and Z-axis means control or drive regarding the direction parallel to the X-axis, the direction parallel to the Y axis, and the direction parallel to the Z axis, respectively. Furthermore, control or drive regarding the θX-axis, θY-axis, and θZ-axis means control or drive regarding the rotation around an axis parallel to the X-axis, the rotation around an axis parallel to the Y axis, and the rotation around an axis parallel to the Z axis, respectively. Furthermore, the position is information specified based on the coordinates of the X-axis, the Y-axis, and the Z axis, and the attitude is information specified by the values ​​of the θX-axis, the θY-axis, and the θZ axis. Positioning means controlling the position and / or attitude.

[0022] The film formation apparatus IMP has a substrate holding part SH that holds a substrate S, a substrate driving mechanism SD that drives the substrate holding part SH to move the substrate S, and a support base SB that supports the substrate driving mechanism SD. The film formation apparatus IMP also has a mold holding part MH that holds a mold M, and a mold driving mechanism MD that drives the mold holding part MH to move the mold M.

[0023] The substrate driving mechanism SD and the mold driving mechanism MD constitute a relative movement mechanism that moves at least one of the substrate S and the mold M so that the relative positions of the substrate S and the mold M are adjusted. The adjustment of the relative positions of the substrate S and the mold M by the relative movement mechanism includes driving for contact between the curable composition IM on the substrate S and the mold M, and driving for separation of the mold M from the cured curable composition IM on the substrate S. The adjustment of the relative positions of the substrate S and the mold M by the relative movement mechanism also includes alignment of the substrate S and the mold M. The substrate driving mechanism SD is configured to drive the substrate S about a plurality of axes (e.g., three axes of the X axis, the Y axis, and the θZ axis, preferably six axes of the X axis, the Y axis, the Z axis, the θX axis, the θY axis, and the θZ axis). The mold driving mechanism MD is configured to drive the mold M about a plurality of axes (e.g., three axes of the Z axis, the θX axis, and the θY axis, preferably six axes of the X axis, the Y axis, the Z axis, the θX axis, the θY axis, and the θZ axis).

[0024] The film forming apparatus IMP has a curing unit CU for curing the curable composition IM filled in the space between the substrate S and the mold M. The curing unit CU cures the curable composition IM on the substrate S, for example, by applying energy for curing to the curable composition IM via the mold M.

[0025] The film forming apparatus IMP has a transparent member TR for forming a space SP on the back side (opposite the surface facing the substrate S) of the mold M. The transparent member TR is made of a material that transmits the curing energy from the curing unit CU, and makes it possible to apply the curing energy to the curable composition IM on the substrate S.

[0026] The film forming apparatus IMP has a pressure control unit PC that controls the pressure in the space SP to control the deformation of the mold M in the Z-axis direction. For example, the pressure control unit PC makes the pressure in the space SP higher than atmospheric pressure, so that the mold M is deformed into a shape toward the substrate S.

[0027] The film-forming apparatus IMP has a dispenser DSP for placing, supplying or distributing the curable composition IM on the substrate S. However, the film-forming apparatus IMP may be supplied (carried in) with the substrate S on which the curable composition IM has been placed by another apparatus. In this case, the film-forming apparatus IMP does not need to have the dispenser DSP.

[0028] The film forming apparatus IMP may have an alignment scope AS for measuring the positional deviation (alignment error) between the substrate S (or the shot area of ​​the substrate S) and the mold M.

[0029] The information processing device 1, which functions as a simulation device, executes calculations to predict the behavior of the curable composition IM in a process executed by the film forming device IMP. Specifically, the information processing device 1 executes calculations to predict the behavior of the curable composition IM in a process in which a plurality of droplets of the curable composition IM arranged on a substrate S are brought into contact with a mold M to form a film of the curable composition IM in the space between the substrate S and the mold M.

[0030] The information processing device 1 is configured, for example, by incorporating a simulation program 21 into a general-purpose or dedicated computer. The information processing device 1 may also be configured by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array) or an ASIC (abbreviation for Application Specific Integrated Circuit).

[0031] In this embodiment, the information processing device 1 may be configured by a computer having a processor 10, a memory 20, a display 30, and an input device 40. The memory 20 stores a simulation program 21 for predicting the behavior of the curable composition IM in the film formation process. The processor 10 can perform a simulation for predicting the behavior of the curable composition IM in the film formation process by reading and executing the simulation program 21 stored in the memory 20. The memory 20 may be a semiconductor memory, a disk such as a hard disk, or another form of memory. The simulation program 21 may be stored in a computer-readable memory medium, or may be provided to the information processing device 1 via a communication facility such as a telecommunication line.

[0032] The processor 10 can function as an acquisition unit that acquires a parameter set for the film formation process. The processor 10 can also function as a processing unit that obtains the behavior of the curable composition by simulation calculation based on the parameter set. The processor 10 can also function as a display control unit that controls the display unit (display 30) to display a simulation image that simulates the behavior of the curable composition obtained by the simulation calculation.

[0033] FIG. 2 is a diagram for explaining two calculation modes of the simulation program 21 in this embodiment. The two calculation modes include a mode for performing calculation according to a first calculation method and a mode for performing calculation according to a second calculation method, and each has its own characteristics. The first calculation method is a method for calculating the filling process with high accuracy, and is executed as a detailed calculation mode 201. The second calculation method is a method for calculating the filling process at high speed, and is executed as a high-speed calculation mode 202. The second calculation method reduces the calculation time compared to the first calculation method. FIG. 2(a) shows a schematic configuration diagram of the simulation program 21 including the detailed calculation mode 201 and the high-speed calculation mode 202.

[0034] One of the purposes of installing the simulation program 21 in the information processing device 1 is to obtain an optimal parameter set for the film formation process at low cost and in a short time. For example, in the process of filling the space between the mold M and the substrate S with the curable composition IM to form a film, if the film is cured with air bubbles remaining in the film, it will become defective. Therefore, the optimal parameter set is a parameter set for the film formation process in the simulation that minimizes the amount of gas remaining in such a film. In this embodiment, the description will be based on the film formation device IMP, so the parameter set will be described as a parameter set that determines the imprint conditions.

[0035] The parameter set 203 is a collection of parameters for the film formation process required for calculations used in the simulation program 21. The parameters may include, for example, model information of the mold M, model information of the substrate S, the imprinting force of the driving mechanism MD, the pressure generated in the space SP, and the droplet arrangement and droplet amount of the curable composition IM. The above parameters are representative examples, and other parameters may also be included. The parameter set 203 may be managed as one file. The file may be stored in the memory 20 of the information processing device 1 or may be stored in an external server. Therefore, in this case, the "multiple parameter sets" may be managed as multiple files. Each parameter included in the parameter set 203 may be manually input by an operator via an input screen.

[0036] One method for determining the parameter set 203 is to actually perform imprinting and determine it through trial and error. Specifically, a plurality of provisional parameter sets are prepared, and each provisional parameter set is applied to actually perform imprinting using the mold M and the substrate S. Then, the optimum parameter set is obtained by measuring defects that occur in the film of the generated curable assembly IM. This method is highly reliable because the film is actually created and the defects are inspected with an inspection device. However, there are problems in that it is costly and time-consuming, such as arranging items for imprinting and a process of inspecting with an inspection device external to the information processing device 1.

[0037] In a simulation using the simulation program 21, the processor 10 refers to a formal parameter set to acquire information necessary for calculation. For example, the processor 10 acquires information such as dimensions and materials of the mold M and the substrate S from the model information of the mold M and the model information of the substrate S included in the formal parameter set. The processor 10 also acquires information on the operation sequence of the mold driving mechanism MD from the information on the imprinting force of the driving mechanism MD and the pressure generated in the space SP included in the formal parameter set. The processor 10 also acquires position information and amount of droplets to be calculated from information such as the arrangement and amount of multiple droplets of the curable composition IM included in the formal parameter set. The processor 10 calculates and simulates the imprint process from the information acquired in this way. Since there is no need to actually perform imprinting, it is possible to determine the final parameter set 203 at low cost and in a short time.

[0038] Next, the two calculation modes provided in the simulation program 21 will be described in detail. In each calculation mode, the processor 10 creates a computational grid 204 to calculate a physical phenomenon. The computational grid 204 is used to discretize a mathematical model that represents the phenomenon to be calculated. Since the computational grid 204 that can be calculated varies depending on the physical phenomenon to be calculated, it is necessary to prepare multiple computational grids 204 when calculating multiple physical phenomena. Therefore, the type of computational grid to be prepared varies depending on the calculation mode. Furthermore, even if the same computational grid 204 is used in each calculation mode, the range to be calculated may also differ.

[0039] In the detailed calculation mode 201, the processor 10 performs physical calculations for many of the physical phenomena assumed in the filling simulation. To perform these multiple physical calculations, the processor 10 uses three computational grids 204. An example of a physical phenomenon calculated by the computational grid A 204a is the behavior of droplets of the curable composition IM. An example of a physical phenomenon calculated by the computational grid B 204b is the deformation (deflection) of the mold M. An example of a physical phenomenon calculated by the computational grid C 204c is the pressure of the closed space SP on the back surface of the mold M. Note that the physical phenomena calculated by each computational grid 204 are shown as examples for the purpose of explanation, and in actual calculations, calculations of physical phenomena other than those introduced here are also performed.

[0040] In the detailed calculation mode 201, a plurality of physical phenomena are coupled and calculated. For example, in the detailed calculation mode 201, the behavior calculation includes performing a coupled calculation to obtain the relationship between the behavior of the droplets of the curable composition IM, the deformation of the mold M, and the pressure of the closed space SP on the back surface of the mold M. Specifically, a coupled calculation is performed between the computational grid A204a and the computational grid B204b, and a coupled calculation is performed between the computational grid B204b and the computational grid C204c. By these coupled calculations, physical phenomena with different computational grids 204 affect each other, and the prediction accuracy of the simulation is improved. However, in the coupled calculation, multiple linear calculations are performed by iteration, so the calculation time tends to be long.

[0041] In the detailed calculation mode 201, an evaluation area 205 as exemplified in FIG. 2(b) is set over the entire surface of the pattern area PR. The evaluation area 205 here refers to a range in which the results of a plane in the X and Y directions are evaluated among the calculation targets of the simulation program 21. When discussing the range to be evaluated by the simulation program 21, the size of the range to be calculated will be discussed based on the evaluation area 205 limited to the X and Y directions. The creation range of the computational grid 204 changes depending on the range of the evaluation area 205. For example, in the computational grid A204a, the calculation range changes depending on the droplet of the curable composition IM to be calculated.

[0042] With reference to FIG. 2(b), the range of the evaluation area A205a in the detailed calculation mode 201 will be described. FIG. 2(b) is a view of the mold M viewed from the -Z direction. The evaluation area 205 in the detailed calculation mode 201 is the evaluation area A205a. In FIG. 2(b), the boundary between the pattern area PR and the computational grid A204a is displayed overlapping. The evaluation area A205a is set to a range that includes all droplets of the curable composition IM. Specifically, in order to distribute the droplets of the curable composition IM in the range of the pattern area PR, the evaluation area A205a is set to the entire surface of the pattern area PR. In the computational grid A204a given as an example, the calculation range is all droplets of the curable composition IM, so that the computational grid A204a including all droplets is created. By making all droplets the calculation target in this way, the influence of all droplets can be taken into consideration when calculating the deformed shape of the mold M. As a result, the deformation of the mold M can be obtained with high accuracy, improving the calculation accuracy.

[0043] As explained above, measures are taken to improve the calculation accuracy in the detailed calculation mode 201. However, the increased calculation accuracy has the drawback of increasing the calculation time.

[0044] Next, the high-speed calculation mode 202, which is another calculation mode, will be described. In the high-speed calculation mode 202, the calculation speed is increased by limiting the calculation content based on the detailed calculation mode 201. Specifically, in the high-speed calculation mode 202, calculations are performed focusing on the generation of bubbles generated in the film of the curable composition IM, with the arrangement and amount of the curable composition IM as the consideration items. This calculation method is effective in processes such as fine adjustment. For example, the high-speed calculation mode 202 is effective in using the method of focusing on bubbles generated in the film of the curable composition IM at a specific position, fine-tuning the droplet arrangement and droplet amount of the curable composition film IM, and checking the increase or decrease of gas generated in the film of the curable composition IM. A plurality of parameter sets 203 with different droplet arrangements and droplet amounts of the curable composition IM are prepared, and calculations are performed using each of the plurality of parameter sets 203 in the high-speed calculation mode 202, so that information on the generated bubbles can be quantitatively compared. In this embodiment, in order to simplify the explanation, the following explanation will be given focusing on the change in droplet arrangement.

[0045] In the high-speed calculation mode 202, the calculation method adopted in the detailed calculation mode 201 is replaced with a simple calculation method to shorten the calculation time. When limiting the focus to the entrapment of air bubbles, the calculation of the behavior of the droplets in the above-mentioned computational grid A204a is essential, so the calculation in the computational grid A204a is essential. However, among the computational grids B204b and C204c, the physical phenomenon that is closely related to the generation of air bubbles is the deflection calculation that calculates the deformed shape of the mold M. The deflection calculation of the mold M is calculated in the computational grid B204b, but in order to perform a precise calculation, it is necessary to perform a coupled calculation with the computational grid A204a and the computational grid C204c, which requires a much longer calculation time than other calculations. Therefore, in the high-speed calculation mode 202, instead of these coupled calculations, the deflection distribution of the mold M is calculated using the formula 206, thereby shortening the calculation time (reducing the amount of calculation). For example, the mold M is deformed into a convex shape toward the substrate S, so that contact with the curable resin IM begins from the center of the mold M. The contact area is determined from the position information of the drive mechanism MD with respect to the substrate S. The contact portion is considered as a fixed portion that does not deform, and the non-contact portion is considered as a calculation target that deforms. In addition, the pressure applied to the space SP is assumed to be uniformly distributed on the calculation target portion of the mold M. By considering it in this way, the deflection distribution of the mold M can be expressed by Equation 206 by applying the formula for the deflection of a disk. By applying the parameters of the mold M to Equation 206, which is such a predetermined model formula, the deformation of the mold M can be easily calculated.

[0046] In this embodiment, an example of replacement by Formula 206 has been shown, but the deflection (deformation) of the mold may be predicted using previously obtained deflection calculation results of mold M or measurement results of the deflection of mold M by measurement. Specifically, the calculation results or measurement results are registered as a database in memory 20 and referenced. This simplifies the calculation, thereby enabling the calculation time to be shortened.

[0047] In one example, in the high-speed calculation mode 202, the calculation is performed with a reduced number of physical calculations to be calculated, thereby shortening the calculation time. As described above, the formula for the deflection of a disk is applied to calculate the deflection distribution of the mold M using Equation 206, thereby omitting computational grid B 204b and computational grid C 204c. This means that the calculation of the pressure in the closed space SP on the back surface of the mold M, which was calculated using computational grid C 204c, is omitted, and the time required for the omitted calculation is shortened. In this way, in the high-speed calculation mode 202, the calculation time can be shortened by reducing the physical quantities to be calculated.

[0048] In one example, in the high-speed calculation mode 202, the calculation time can be shortened by making the evaluation area 205 a local range. That is, the evaluation area of ​​the behavior calculation by the second calculation method is limited to a part of the evaluation area of ​​the behavior calculation by the first calculation method, thereby shortening the calculation time. The evaluation area 205 in the high-speed calculation mode 202 is set to the evaluation area B205b as exemplified in FIG. 2(b). In the detailed calculation mode 201, the evaluation area A205a is set to the entire surface of the pattern area PR to increase the amount of calculation information, but in the high-speed calculation mode 202, the time required for calculation is shortened by limiting the objects to be evaluated. Specifically, while the detailed calculation mode 201 evaluates all droplets of the curable composition IM, the high-speed calculation mode 202 specifies the evaluation area B205b as the evaluation object only for droplets near the area of ​​interest, as shown in FIG. 2(b). For example, locations where bubbles are likely to occur, such as droplet arrangement, the shape of the mold M or substrate S, and corners of the pattern region PR, can be specified as the evaluation region B205b. Also, locations where bubbles that cause problems in measurements by a defect inspection device or other analyses have occurred can be specified as the evaluation region B205b. In the computational grid A204a given as an example in the explanation of the detailed calculation mode 201, the range of droplets to be evaluated is the droplets of the curable composition IM within this range, so the computational grid A204a becomes smaller. The smaller the computational grid A204a, the shorter the calculation time.

[0049] As described above, in the high-speed calculation mode 202, the number of physical calculations to be calculated is reduced, the calculation in the computational grid 204 is replaced with a simple calculation method, and the evaluation region 205 is a local range, thereby significantly speeding up the calculation compared to the detailed calculation mode 201. This allows the comparison of the amounts related to bubble defects between drop recipes in a short time.

[0050] In this embodiment, as described above, since the focus is on determining the droplet arrangement of the curable composition IM, the above-mentioned time-saving method is adopted. The high-speed calculation mode 202 is used by changing the time-saving method according to the parameter set 203.

[0051] The terms "detailed" and "high speed" are names given to two calculation modes in this embodiment in a relative comparison. For example, the detailed calculation mode 201 may be positioned as a standard calculation mode that the simulation program 21 is originally executed in. In this case, a mode in which a restriction is imposed on the standard calculation mode to improve the calculation speed, thereby lowering the calculation accuracy but improving the calculation speed, may be understood as a high speed calculation mode.

[0052] A plurality of parameter sets 203 having different parameters are prepared, and the simulation program 21 executes calculations for each of the plurality of parameter sets 203 .

[0053] If there is only one calculation mode, the total calculation time increases in proportion to the number of calculations. In contrast, by performing all calculations in a calculation mode such as the high-speed calculation mode 202 in which calculations can be completed in a short time, it is possible to narrow down the parameter set, which is the imprint condition to be calculated in a calculation mode that takes time such as the detailed calculation mode. For example, if the calculation time in the detailed calculation mode is about 2 hours and the calculation time in the high-speed calculation mode is about 1 minute, the time saved is obvious. Therefore, by preparing two calculation modes and using them appropriately as in this embodiment, it is possible to shorten the total calculation time.

[0054] 3 is a flowchart for explaining the calculation procedure of the simulation in this embodiment. In this flow, each of a plurality of parameter sets is applied to the high-speed calculation mode 202 to perform high-speed calculation, and the parameter set to be applied to the detailed calculation mode 201 is determined based on the result. The contents of the parameter set 203 are the same as those described above with reference to FIG. 2.

[0055] The flow in Fig. 3 is well suited for automatic execution by program processing. If a file that can describe a series of setting information and work procedures, such as a sequence file, is available, automatic execution using the sequence file can improve work efficiency. In this embodiment, the explanation will be given assuming automatic execution.

[0056] In S301, the processor 10 prepares a plurality of formal parameter sets. For example, the processor 10 prepares a plurality of formal parameter sets with different droplet arrangements. In addition, in this preparation, an evaluation area 205 is specified. The evaluation area 205 determines the calculation target of the high-speed calculation mode 202. Note that there may be a plurality of evaluation areas 205. When there are a plurality of evaluation areas 205, the number of calculations in the high-speed calculation mode 202 increases according to the number of evaluation areas 205, but the selection of the parameter set 203 can be performed more precisely. In this embodiment, in order to simplify the description to be described later, the description will be continued assuming that there is one evaluation area 205. In this embodiment, the description will be given assuming that there are ten formal parameter sets to be prepared. The difference between these ten formal parameter sets is the difference in the X and Y coordinates of the droplet arrangement here.

[0057] These tentative parameter sets may be registered in the memory 20 through an input operation by an operator, or may be created by a program that automatically generates parameter sets by inputting the droplet arrangement conditions to be changed.

[0058] In S302, the processor 10 sets the calculation mode to the high-speed calculation mode 202. In this embodiment, since the simulation program 21 has the detailed calculation mode 201 and the high-speed calculation mode 202, the processor 10 sets the calculation mode to be used to the high-speed calculation mode 202. Specifically, a switching command is described in the sequence file, and the processor 10 receives the command and automatically switches to the high-speed calculation mode 202.

[0059] In S303, the processor 10 executes calculations in the high-speed calculation mode 202. In this step, each of the multiple formal parameter sets prepared in S301 is applied to execute calculations in the high-speed calculation mode 202. In this embodiment, ten sets of formal parameter sets are prepared, so a total of ten calculations are performed. The calculations are executed automatically, and the ten calculations are executed consecutively.

[0060] In S304, the processor 10 creates a calculation result list. The processor 10 collects the calculation results for each of the multiple formal parameter sets into one file as a calculation result list and saves it in the memory 20. The types of calculation results to be saved must include at least the evaluation items for threshold determination that will be introduced in the next step. In this embodiment, there are 10 sets of formal parameter sets, so 10 sets of calculation results are described in the calculation list. In this embodiment, the following explanation will be given assuming that the number of air bubble defects and the maximum defect size are included. The calculation list is created automatically.

[0061] In S305, the processor 10 selects a parameter set. The processor 10 determines, from among the multiple temporary parameter sets, a parameter set for which the result of behavior calculation in the high-speed calculation mode 202 satisfies a predetermined evaluation criterion. A plurality of judgment programs (modules) with different algorithms may be provided, and the parameter set may be determined by one judgment program selected from among them. A method may also be adopted in which a plurality of judgment programs are installed in the memory 20 and any one of them is used.

[0062] Since the calculation results have already been compiled as a calculation result list in S304, the parameter set is determined (selected) by referring to the calculation result list in S305. Among the results of behavior calculation corresponding to each of the multiple temporary parameter sets, information on the maximum bubble defect size and the number of bubble defects is referred to.

[0063] First, it is necessary to establish a policy for judging the calculation results by the judgment program. The above-mentioned predetermined evaluation criterion can be that the maximum bubble defect size is equal to or less than the allowable value and the number of bubble defects is equal to or less than the allowable number. For example, the first priority of the judgment is the condition that the maximum bubble defect size is equal to or less than the allowable value, and the second priority of the judgment is the condition that the number of bubble defects is equal to or less than the allowable number, and the policy is to select one or more of the best ones regarding these conditions. For example, if there are 10 sets of tentative parameter sets registered in the calculation result list, the processor 10 refers to the calculation results one by one to search for parameter sets that satisfy the above-mentioned conditions, and selects a predetermined number (for example, 1) of parameter sets from the 10 sets. Note that these judgments are automatically performed according to the judgment program. Note that the judgment policy is not limited to the contents described here, and can be arbitrarily set by the operator. The narrowing down of the parameter set candidates here is directly linked to the calculation time that is shortened. This is because the calculation in the detailed calculation mode 201 is performed thereafter for the number of parameter sets that are listed as candidates here. Therefore, from the viewpoint of time, it is desirable to select as few parameter sets as possible, but from the viewpoint of evaluating the calculation results, one would like to have as many sets as possible, so the numbers must be chosen carefully.

[0064] In addition, there may be cases where there is no parameter set that matches the policy (predetermined evaluation criteria). In such cases, a parameter set close to the policy may be selected, or the flow may be exited here and calculations in the detailed calculation mode 201 described later may not be performed.

[0065] In S306, the processor 10 sets the calculation mode to the detailed calculation mode 201. Since the simulation program 21 is set to the high-speed calculation mode 202 in S302, the calculation mode is switched in this step to the detailed calculation mode 201. Specifically, a switching command is written in the sequence file, and the processor 10 receives the command and automatically switches to the detailed calculation mode 201.

[0066] In S307, the processor 10 executes calculation in the detailed calculation mode 302. Here, the parameter set selected in S305 is applied to execute the detailed calculation mode 201. If the parameter sets are narrowed down to one set in S305, one calculation result in the detailed calculation mode 201 is obtained.

[0067] The obtained calculation results are more detailed than the calculation results in the high-speed calculation mode 201, and therefore can be used to check the final information on bubble generation. In addition, since the bubble disappearance calculation is performed, the results of more physical calculations, such as evaluation of the filling completion time, can also be evaluated. If there are no problems with these, the narrowed-down parameter set can be set as the final parameter set as is, or the flow can be executed again to determine other parameters. A typical method of use is to repeat these evaluations to determine the final parameter set to be used in the film forming device IMP.

[0068] By executing the steps described above, instead of applying the detailed calculation mode 201 to all of the multiple formal parameter sets, the number of calculations in the detailed calculation mode 201 can be reduced by narrowing down the parameter set candidates using the high-speed calculation mode 202. This makes it possible to shorten the total calculation time required to determine the parameter sets.

[0069] As described above, according to this embodiment, the simulation program includes a calculation mode for performing detailed calculations and a calculation mode for performing high-speed calculations, and the time required for the simulation can be reduced by performing calculations that make use of the characteristics of these modes. For example, the total calculation time required for the calculations can be reduced by calculating multiple formal parameter sets in the high-speed calculation mode to narrow down the parameter sets, and then executing only the narrowed-down parameter sets in the detailed calculation mode.

[0070] As described above, it is possible to provide a method for shortening the time required to determine a parameter set by shortening the total calculation time of the simulation.

[0071] <Second embodiment> In the second embodiment, a selection is presented for accepting a user instruction regarding a parameter set and a calculation method for the film formation process, and a calculation mode is switched using a user interface that accepts a user instruction to start execution of behavior calculation. In this embodiment, such a user interface is realized using a display 30 provided in the information processing device 1. The display 30 provides a GUI (Graphical User Interface). In this embodiment, an operator (user) visually checks the calculation results via the GUI, and the operator manually switches the calculation mode. Note that the second embodiment overlaps in many parts with the first embodiment. Therefore, the second embodiment will be described only in terms of the parts that are different from the first embodiment.

[0072] FIG. 4 is a diagram showing an example of a GUI provided on the display 30 of the information processing device 1 in the second embodiment. The GUI provided on the display 30 may include a display window 401. The display window 401 is a general-purpose display window for displaying various visual information. The GUI may also include a parameter set selection window 402. The parameter set selection window 402 displays a plurality of parameter sets registered in the memory 20. The user can select one or more of the displayed plurality of parameter sets by the input device 30. Note that multiple parameter sets can be selected.

[0073] The GUI may further include a calculation mode selection window 403. The calculation modes provided in the simulation program 21 are displayed in the calculation mode selection window 403. The above-mentioned manual switching of the calculation mode can be performed via this selection window 403. In this embodiment, a detailed calculation mode 201 and a high-speed calculation mode 202 are used, so two calculation modes are displayed. These can be selected by the input device 30. Calculation is performed in the calculation mode selected here.

[0074] The GUI may further include a calculation result display button 404. When the calculation result display button 404 is pressed while a parameter set is selected in the parameter set selection window 403, the calculation results are displayed in the display window 401.

[0075] The GUI may further include a calculation execution button 405. In response to pressing the calculation execution button 405 with a parameter set selected in the parameter set selection window 403 and a calculation mode selected in the calculation mode selection window 405, behavior calculation is executed.

[0076] The second embodiment is similar to the first embodiment in that a plurality of formal parameter sets are prepared and then calculated in the high speed calculation mode 202. In the second embodiment, the calculation results in the detailed calculation mode 201 can be obtained using a GUI. When the parameter set 203 to be calculated is selected in the parameter set selection window 402 and the high speed calculation mode 202 is selected in the calculation mode selection window 403, and the calculation execution button 405 is pressed, the calculation results in the high speed calculation mode 202 are obtained.

[0077] When a parameter set is selected in the parameter set selection window 402 and a calculation result display button 404 is pressed while there are calculation results in the high speed calculation mode 202, the calculation results are displayed in the display window 401. There are many possible ways to display the calculation results, but in FIG. 4, a color contour showing the size of the distributed bubble defects, the number of bubbles, the maximum area of ​​the bubbles in the XY plane, and the average area of ​​the bubbles in the XY plane can be displayed. These display information can be changed by settings. The reason why the size of the bubbles is displayed in the XY plane instead of the volume is that the bubbles generated in the film of the curable composition IM are measured in the XY plane by an external device, and the values ​​are to be matched.

[0078] Although FIG. 4 displays information on the calculation results for one parameter set, it is also possible to compare and evaluate multiple calculation results by selecting multiple parameter sets in the parameter set selection window 402.

[0079] The operator checks the information of these calculation results and selects a parameter set to be calculated in the detailed calculation mode 201. Note that a new parameter set may be created based on knowledge obtained by referring to the calculation results, and the parameter set may be used as a candidate for calculation in the detailed calculation mode 201.

[0080] After referring to the calculation results, the operator selects the parameter set 203 for executing the detailed calculation mode from the parameter set selection window 402. Then, the operator selects the detailed calculation mode 201 from the calculation mode selection window 403. After that, the calculation in the detailed calculation mode 201 is executed by pressing the execute calculation button 405.

[0081] As described above, in this embodiment, a method has been shown in which a parameter set for performing the detailed calculation mode 201 is manually selected at the discretion of the operator. Since the first embodiment is an automatic execution, it is highly effective in shortening the overall calculation speed. In contrast, in this embodiment, the operator checks before calculation in the detailed calculation mode 201, so that if there is an error in the automated sequence, there is less rework and flexible judgment can be made after seeing the results. It is desirable to use these methods according to the purpose of use.

[0082] In this embodiment as well, the total calculation time required for calculation can be reduced by calculating multiple formal parameter sets in high-speed calculation mode to narrow down the parameter sets, and then executing only the narrowed-down parameter sets in detailed calculation mode.

[0083] As described above, it is possible to provide a method for shortening the time required to determine a parameter set by shortening the total calculation time of the simulation.

[0084] <Third embodiment> In the third embodiment, an evaluation region 205 is selected from information obtained from the calculation results in the detailed calculation mode 201, and calculation is performed in the high-speed calculation mode 202. Specifically, in the third embodiment, a problematic range is specified in advance from the calculation results in the detailed calculation mode 202, and an evaluation region 205 is selected from information on the specified range. After that, multiple parameter sets are prepared for the purpose of improvement, and calculation is performed in the high-speed calculation mode 202. Examples of problematic ranges include large air bubbles and areas where air bubbles are concentrated.

[0085] The third embodiment overlaps with the first embodiment in many respects, so the third embodiment will be described only in terms of the differences from the first embodiment.

[0086] FIG. 5 is a flowchart illustrating a calculation procedure of the simulation in the third embodiment. In S501, the processor 10 prepares a parameter set. In this embodiment, it is assumed that the location where the bubble defect occurs is known. Therefore, in S501, for example, a parameter set in which the bubble defect is a problem in the film forming device IMP is prepared.

[0087] In S502, the processor 10 sets the calculation mode to the detailed calculation mode 201. In S503, the processor 10 executes calculation in the detailed calculation mode 201. In this step, one detailed calculation mode 201 calculation is executed according to the parameter set prepared in S501. In this embodiment, since the location of the bubble generation is already known, it is possible to check at this stage whether there is any difference from the actual phenomenon. If there is a difference, the flow may be interrupted once and the parameter set to be prepared in S501 may be reviewed.

[0088] In S504, the processor 10 selects the evaluation region 205. As described above, the evaluation region 205 is selected from locations where large bubbles or bubbles are concentrated. As described in the first embodiment, the evaluation region 205 does not need to be limited to one location, and multiple evaluation regions 205 may be selected. However, care must be taken because an increase in the number of evaluation regions 205 to be evaluated increases the calculation time.

[0089] In S505, the processor 10 prepares a plurality of tentative parameter sets. For example, a plurality of sets are prepared in which the X coordinate or the Y coordinate of the droplet of the curable composition IM that is likely to cause the generation of bubbles is changed within the range of the evaluation region 205. Note that, since a plurality of tentative parameter sets needs to be considered, a plurality of parameter sets are usually prepared in S505.

[0090] In S506, the processor 10 sets the calculation mode to the high speed calculation mode 202. In S507, the processor 10 executes calculation in the high speed calculation mode 202. Here, the processor 10 executes the high speed calculation mode 202 by applying the multiple parameter sets prepared in S505.

[0091] By referring to the obtained calculation results, it is possible to predict an increase or decrease in the number of bubbles when the arrangement of the droplets of the curable composition IM is changed. A detailed simulation result of the bubbles may be obtained by performing calculations in the detailed calculation mode 201 using the best parameter set, or the parameter set may be used to actually perform imprinting with the film forming apparatus IMP to confirm the effect of reducing bubble defects.

[0092] As described above, in this embodiment as well, by using the calculation in the high speed calculation mode 202, the number of calculations in the detailed calculation mode 201 can be reduced, and therefore the total calculation time required for the simulation can be reduced.

[0093] As described above, it is possible to provide a method for shortening the time required to determine a parameter set by shortening the total calculation time of the simulation.

[0094] <Fourth embodiment> As an application example, the film formation apparatus IMP has been described as an imprint apparatus. However, the present invention is also effective in other apparatuses having a filling process similar to that of an imprint apparatus. For example, the planarization apparatus described above is one of them.

[0095] As a specific example of application, the present invention can be applied to planarization of unevenness of about 0.5 to 1 μm that occurs on a substrate during device processing to a level that matches the focal depth of lithography technology. One method of planarization is to apply resin droplets between a flat mold and a substrate using inkjet technology, and then press them together to form a flat film of the composition on the substrate, thereby achieving planarization. The device that performs this type of planarization needs to determine a parameter set for the planarization process, which is similar to that of an imprint device. Therefore, the present invention can be applied to the above-mentioned process.

[0096] (Other embodiments) The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) for implementing one or more of the functions.

[0097] The disclosure of this specification includes at least the following simulation device and program. (Item 1) A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method, The processing unit includes: Calculating the behavior of the curable composition by the second calculation method by applying each of the multiple tentative parameter sets of the film formation process; determining a parameter set from among the plurality of formal parameter sets, the parameter set being such that a result of the behavior calculation satisfies a predetermined evaluation criterion; Applying the determined parameter set, a behavior calculation of the curable composition is performed by the first calculation method. A simulation device comprising: (Item 2) The behavior calculation by the first calculation method includes performing a coupled calculation to obtain a relationship between the behavior of the droplet of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold; The behavior calculation by the second calculation method includes calculating deformation of the mold by applying parameters of the mold to a predetermined model formula instead of the coupled calculation. 2. The simulation device according to item 1, (Item 3) The behavior calculation by the first calculation method includes performing a coupled calculation to obtain a relationship between the behavior of the droplet of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold; The behavior calculation by the second calculation method includes predicting the deformation of the mold using a calculation result of the deformation of the mold in the past or a measurement result of the deformation of the mold without performing the coupled calculation. 2. The simulation device according to item 1, (Item 4) 4. The simulation device according to any one of claims 1 to 3, characterized in that an evaluation region of the behavior calculation by the second calculation method is limited to a part of the evaluation region of the behavior calculation by the first calculation method. (Item 5) The results of the behavior calculation include information on the maximum bubble defect size and the number of bubble defects; The predetermined evaluation criteria are that the maximum bubble defect size is equal to or less than an allowable value and that the number of bubble defects is equal to or less than an allowable number; 5. The simulation device according to any one of items 1 to 4, (Item 6) A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that has a shorter calculation time than the first calculation method; a user interface that presents options for receiving a user instruction regarding a parameter set and a calculation method for the film formation process and receives a user instruction to start execution of behavior calculation; the processing unit, in response to a user instruction to start the execution being input via the user interface, applies a parameter set selected from a choice of parameter sets, and executes a behavior calculation of the curable composition by a calculation method selected from a choice of calculation methods among the first calculation method and the second calculation method. A simulation device comprising: (Item 7) the user interface is configured to allow a user to select a plurality of parameter sets from the parameter set options; When a plurality of parameter sets are selected by the user from the parameter set options and the second calculation method is selected by the user from the calculation method options, the processing unit applies each of the selected plurality of parameter sets to execute a behavior calculation of the curable composition by the second calculation method. 7. The simulation device according to item 6, (Item 8) the user interface includes a display window for displaying results of the performed behavioral calculations; After the behavior calculation of the curable composition is performed by the second calculation method by applying each of the selected multiple parameter sets, in response to a user selecting one parameter set from the multiple parameter sets from the options, the display window displays a result of the behavior calculation performed by applying the selected parameter set. 8. The simulation device according to item 7, (Item 9) 9. The simulation device according to item 8, wherein after the behavior calculation of the curable composition is performed by the second calculation method by applying each of the selected multiple parameter sets, when a user selects one of the multiple parameter sets from the options and inputs a user instruction to start the execution while the first calculation method is selected, the processing unit applies the selected parameter set and performs the behavior calculation of the curable composition by the first calculation method. (Item 10) A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method, The processing unit includes: Calculating the behavior of the curable composition by the first calculation method by applying the tentative parameter set of the film formation process; determining an evaluation region based on a result of the behavior calculation for the formal parameter set; applying each of a plurality of tentative parameter sets to the determined evaluation region, and performing a behavior calculation of the curable composition by the second calculation method; A simulation device comprising: (Item 11) A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method; A simulation device comprising: (Item 12) 12. A program for causing a computer to function as a processing unit in the simulation device according to any one of items 1 to 11.

[0098] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0099] IMP: film forming device, S: substrate, IM: curable composition, M: mold, AS: alignment scope, 1: information processing device

Claims

1. A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method, The processing unit includes: Calculating the behavior of the curable composition by the second calculation method by applying each of the multiple tentative parameter sets of the film formation process; determining a parameter set from among the plurality of formal parameter sets, the parameter set being such that a result of the behavior calculation satisfies a predetermined evaluation criterion; Applying the determined parameter set, a behavior calculation of the curable composition is performed by the first calculation method. A simulation device comprising:

2. The behavior calculation by the first calculation method includes performing a coupled calculation to obtain a relationship between the behavior of the droplet of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold; The behavior calculation by the second calculation method includes calculating deformation of the mold by applying parameters of the mold to a predetermined model formula instead of the coupled calculation.

2. The simulation device according to claim 1.

3. The behavior calculation by the first calculation method includes performing a coupled calculation to obtain a relationship between the behavior of the droplet of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold; The behavior calculation by the second calculation method includes predicting the deformation of the mold using a past calculation result of the deformation of the mold or a measurement result of the deformation of the mold without performing the coupled calculation.

2. The simulation device according to claim 1.

4. 2. The simulation device according to claim 1, wherein an evaluation region for the behavior calculation by the second calculation method is limited to a part of an evaluation region for the behavior calculation by the first calculation method.

5. The results of the behavior calculation include information on the maximum bubble defect size and the number of bubble defects; The predetermined evaluation criteria are that the maximum bubble defect size is equal to or less than an allowable value and that the number of bubble defects is equal to or less than an allowable number; 2. The simulation device according to claim 1 .

6. A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that has a shorter calculation time than the first calculation method; a user interface that presents options for receiving a user instruction regarding a parameter set and a calculation method for the film formation process and receives a user instruction to start execution of behavior calculation; the processing unit, in response to a user instruction to start execution being input via the user interface, applies a parameter set selected from a choice of parameter sets, and executes behavior calculation of the curable composition by a calculation method selected from a choice of calculation methods among the first calculation method and the second calculation method. A simulation device comprising:

7. the user interface is configured to allow a user to select a plurality of parameter sets from the parameter set options; When a plurality of parameter sets are selected by the user from the parameter set options and the second calculation method is selected by the user from the calculation method options, the processing unit applies each of the selected plurality of parameter sets to execute a behavior calculation of the curable composition by the second calculation method.

7. The simulation device according to claim 6.

8. the user interface includes a display window for displaying results of the performed behavioral calculations; and after the behavior calculation of the curable composition is performed by the second calculation method by applying each of the selected plurality of parameter sets, in response to a user selecting one of the plurality of parameter sets from the selection list, the display window displays a result of the behavior calculation performed by applying the selected parameter set.

8. The simulation device according to claim 7.

9. The simulation device according to claim 8, characterized in that after the behavior calculation of the curable composition is performed by the second calculation method by applying each of the selected multiple parameter sets, when a user selects one of the multiple parameter sets from the options and inputs a user instruction to start the execution while the first calculation method is selected, the processing unit applies the selected parameter set and performs the behavior calculation of the curable composition by the first calculation method.

10. A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method, The processing unit includes: Calculating the behavior of the curable composition by the first calculation method by applying the tentative parameter set of the film formation process; determining an evaluation region based on a result of the behavior calculation for the formal parameter set; applying each of a plurality of tentative parameter sets to the determined evaluation region, and performing a behavior calculation of the curable composition by the second calculation method; A simulation device comprising:

11. A simulation device for predicting behavior of a curable composition in a film formation process in which a plurality of droplets of the curable composition disposed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, the simulation device comprising: a processing unit that executes a behavior calculation of the curable composition by a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method; A simulation device comprising:

12. A program for causing a computer to function as a processing unit in the simulation device according to any one of claims 1 to 11.

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