Plasma Processing Equipment

Abstract

To provide a technique of reducing the level of reflection of a source high-frequency power in a plasma processing apparatus.SOLUTION: A plasma processing apparatus comprises a chamber, a substrate support part, a high-frequency power supply, and a bias power supply. The high-frequency power supply generates a source high-frequency power for generating a plasma in the chamber. The bias power supply applies a pulse of a bias energy to a bias electrode in each of a plurality of pulse periods. The high-frequency power supply sets a source frequency of the source high-frequency power in each of a plurality of phase periods of a plurality of overlapping periods that is overlapped to each of the plurality of pulse periods according to a change in the level of reflection of the source high-frequency power. The level of reflection is specified by using source frequencies different from each other in the same phase period in two or more previous overlapping periods.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a plasma processing apparatus and method for controlling a source frequency of source radio frequency power. [Background technology]

[0002] A plasma processing apparatus is used in plasma processing of a substrate. In the plasma processing apparatus, bias high frequency power is used to attract ions from a plasma generated in a chamber to the substrate. The following Patent Document 1 discloses a plasma processing apparatus that modulates the power level and frequency of the bias high frequency power. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-246091 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for reducing the degree of source RF power reflection in plasma processing equipment. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The substrate support has a bias electrode and is disposed within the chamber. The radio frequency power source is configured to generate a source radio frequency power to generate a plasma within the chamber. The bias power source is configured to provide a pulse of bias energy to the bias electrode in each of a plurality of pulse periods. The bias power source is configured to periodically provide bias energy having a waveform period to the bias electrode in each of the plurality of pulse periods. The radio frequency power source is configured to set a source frequency of the source radio frequency power in each of a plurality of phase periods within each of a plurality of waveform periods of the bias energy included in each of a plurality of overlap periods. The plurality of overlap periods respectively overlap with the plurality of pulse periods. The radio frequency power source is configured to perform pulse-to-pulse feedback. The pulse-to-pulse feedback includes adjusting a source frequency f(k,m,n) in response to a change in the degree of reflection of the source radio frequency power. f(k,m,n) is a source frequency in an nth phase period within an mth waveform period within a kth overlap period among the plurality of overlap periods. A change in the degree of reflection is determined by using a different source frequency in an nth phase period within an mth waveform cycle in each of two or more overlap periods prior to a kth overlap period. Effect of the Invention

[0006] According to one exemplary embodiment, it is possible to reduce the degree of reflection of source radio frequency power in a plasma processing apparatus. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic diagram illustrating a plasma processing apparatus according to an exemplary embodiment; [Diagram 2] 1 is a schematic diagram illustrating a plasma processing apparatus according to an exemplary embodiment; [Diagram 3]Each of (a) of FIG. 3 and (b) of FIG. 3 is a timing chart showing an example of the source high frequency power and the bias energy. [Figure 4] Each of (a) of FIG. 4 and (b) of FIG. 4 is a timing chart showing an example of the source high frequency power and the bias energy. [Diagram 5] 11 is a timing chart of an example of bias energy and source frequency of source high frequency power. [Figure 6] 13 is a timing chart of another example of bias energy and source frequency of source high frequency power. [Figure 7] 13 is a timing chart of another example of bias energy. [Figure 8] 11 is a timing chart of an example of bias energy and source frequency of source high frequency power. [Figure 9] 4 is a flow diagram of a method for controlling a source frequency of source radio frequency power according to an exemplary embodiment. [Figure 10] Each of (a) to (d) of FIG. 10 is a timing chart of yet another example of the bias energy. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The substrate support has a bias electrode and is disposed within the chamber. The radio frequency power source is configured to generate a source radio frequency power to generate a plasma within the chamber. The bias power source is configured to provide a pulse of bias energy to the bias electrode in each of a plurality of pulse periods. The bias power source is configured to periodically provide bias energy having a waveform period to the bias electrode in each of the plurality of pulse periods. The radio frequency power source is configured to set a source frequency of the source radio frequency power in each of a plurality of phase periods within each of a plurality of waveform periods of the bias energy included in each of a plurality of overlap periods. The plurality of overlap periods respectively overlap with the plurality of pulse periods. The radio frequency power source is configured to perform pulse-to-pulse feedback. The pulse-to-pulse feedback includes adjusting a source frequency f(k,m,n) in response to a change in the degree of reflection of the source radio frequency power. f(k,m,n) is a source frequency in an nth phase period within an mth waveform period within a kth overlap period among the plurality of overlap periods. A change in the degree of reflection is determined by using a different source frequency in an nth phase period within an mth waveform cycle in each of two or more overlap periods prior to a kth overlap period.

[0010] By using different source frequencies in the same phase period in the same waveform cycle in each of two or more overlapping periods, it is possible to identify the relationship between the change in source frequency (frequency shift) and the change in the degree of reflection of the source high frequency power. Therefore, according to the above embodiment, it is possible to adjust the source frequency used in the nth phase period in the mth waveform cycle in the kth overlapping period in response to the change in the degree of reflection so as to reduce the degree of reflection. Also, according to the above embodiment, it is possible to quickly reduce the degree of reflection in each of the multiple waveform cycles in each of the multiple overlapping periods.

[0011] In one exemplary embodiment, the two or more overlapping periods may include a (k-K1)th overlapping period and a (k-K2)th overlapping period, where K1 and K2 are natural numbers such that K1>K2.

[0012] In one exemplary embodiment, the inter-pulse feedback may include providing the source frequency f(k-K2,m,n) with one frequency shift from the source frequency f(k-K1,m,n). The one frequency shift may be one of a decrease or an increase in frequency. The inter-pulse feedback may set f(k,m,n) to a frequency having one frequency shift relative to f(k-K2,m,n) if the degree of reflection is decreased by using the one frequency shift f(k-K2,m,n). The inter-pulse feedback may set the source frequency f(k+K3,m,n) to an intermediate frequency if the degree of reflection is increased by using the one frequency shift f(k,m,n). The intermediate frequency is a frequency between f(k-K2,m,n) and the source frequency f(k,m,n), where K3 is a natural number.

[0013] In one exemplary embodiment, the degree of reflection may be greater than the threshold value when using the intermediate frequency in the nth phase period in the mth waveform period in the (k+K3)th overlap period. In this case, the pulse-to-pulse feedback may set the source frequency f(k+K4,m,n) to a frequency having another frequency shift with respect to the intermediate frequency, where the other frequency shift has an absolute value greater than the absolute value of the amount of the one frequency shift, where K4 is a natural number satisfying K4>K3.

[0014] In one exemplary embodiment, the absolute value of one of the frequency shift amounts used to obtain f(k,m,n) may be greater than the absolute value of one of the frequency shift amounts used to obtain f(k-K2,m,n).

[0015] In one exemplary embodiment, the interpulse feedback may include providing f(k-K2,m,n) with one frequency shift from f(k-K1,m,n), where the one frequency shift is one of a decrease and an increase in frequency. If the degree of reflection increases using f(k-K2,m,n) resulting from the one frequency shift, the interpulse feedback may set f(k,m,n) to a frequency having the other frequency shift relative to f(k-K2,m,n).

[0016] In one exemplary embodiment, the bias energy may be bias radio frequency power having a bias frequency that is the inverse of the time length of a waveform period. The bias energy may include pulses of voltage provided to the bias electrode in each of a plurality of waveform periods, each having a time length that is the inverse of the bias frequency.

[0017] In one exemplary embodiment, the multiple overlapping periods are numbered from 1 to K a th overlap period, where a is a natural number equal to or greater than 2. The high-frequency power source is a ) a In each of the overlap periods OP(1) to OP(K), an initial process may be performed to set the source frequency in each of the multiple phase periods to multiple frequencies included in a frequency set prepared in advance. Here, OP(k) is the k-th overlap period among the multiple overlap periods. CY(m) is the m-th waveform period in each overlap period. The high frequency power source is a ) for each of the waveform periods CY(M a Intra-pulse feedback may be performed in waveform periods after CY(m), where the intra-pulse feedback includes adjusting the source frequency f(k,m,n) in response to changes in the degree of source RF power reflection when using different source frequencies in the nth phase period in each of two or more waveform periods prior to waveform period CY(m) during each overlap period.

[0018] In one exemplary embodiment, the multiple overlapping periods are overlapping periods OP(K a +1)~Overlap Period OP(K b ), where K b is (K a +1) or more. The high frequency power source is a natural number equal to or greater than the overlap period OP(K a +1)~Overlap Period OP(K b ) b1 The above-mentioned initial process may be performed in each of the overlap periods OP(K a +1)~Overlap Period OP(K b ) b1 +1)~Waveform period CY(M b2 ), the pulse-to-pulse feedback may be performed. Also, the high frequency power source may be a +1)~Overlap Period OP(K b ) for each of the waveform periods CY(M b2 ), followed by the intra-pulse feedback. b1 and M a is M b1 <M a may be satisfied.

[0019] In one exemplary embodiment, the high frequency power source has an overlap period OP(K b +1) to the waveform period CY(1) to the waveform period CY(M c ), the pulse-to-pulse feedback may be performed. Also, the high frequency power source may be b +1) to the last overlap period, the waveform period CY(M c ) may be followed by the intra-pulse feedback.

[0020] In one exemplary embodiment, the high frequency generator may be configured to set the source frequency in an nth phase period in a waveform period of the multiple waveform periods in which intra-pulse feedback is first applied, during at least one overlapping period from a second to a last overlapping period of the multiple overlapping periods, to the source frequency in an nth phase period in a last waveform period of the multiple waveform periods included in the overlapping period immediately preceding the at least one overlapping period, or to an average of the source frequency in the nth phase period of two or more waveform periods including the last waveform period.

[0021] In one exemplary embodiment, the radio frequency power source may be configured to terminate the initial process when a monitor value reflecting the degree of reflection during the initial process falls within a specified range.

[0022] In another exemplary embodiment, a method for controlling a source frequency of a source radio frequency power is provided. The method includes (a) providing a pulse of bias energy to a bias electrode of a substrate support disposed in a chamber of a plasma processing apparatus during each of a plurality of pulse periods. The bias energy has a waveform period and is periodically provided to the bias electrode during each of the plurality of pulse periods. The method further includes providing a source radio frequency power from a radio frequency power source to generate a plasma in the chamber. The method further includes setting a source frequency of the source radio frequency power during each of a plurality of phase periods in each of a plurality of waveform periods of the bias energy included in each of a plurality of overlap periods. The plurality of overlap periods overlap the plurality of pulse periods, respectively. The source frequency f(k,m,n) is adjusted in response to a change in the degree of reflection of the source radio frequency power. The change in the degree of reflection is determined by using a different source frequency during an nth phase period in an mth waveform period in each of two or more overlap periods prior to a kth overlap period among the plurality of overlap periods.

[0023] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0024] 1 and 2 are diagrams that illustrate a plasma processing apparatus according to an exemplary embodiment.

[0025] In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas exhaust port is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0026] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit.

[0027] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0028] A configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described below. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a shower head 13. The substrate support 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The sidewall 10a is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0029] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base 111e and an electrostatic chuck 111c. The base 111e includes a conductive member. The conductive member of the base 111e functions as a lower electrode. The electrostatic chuck 111c is disposed on the base 111e. The upper surface of the electrostatic chuck 111c has a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 111c, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0030] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition to the shower head 13, the gas introduction unit may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

[0031] The gas supply 20 may include one or more gas sources 21 and at least one or more flow controllers 22. In one embodiment, the gas supply 20 is configured to supply one or more process gases from respective gas sources 21 through respective flow controllers 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of one or more process gases.

[0032] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0033] The plasma processing apparatus 1 further includes a high-frequency power supply 31 and a bias power supply 32. The plasma processing apparatus 1 may further include a sensor 31s and a control unit 30c.

[0034] The high frequency power supply 31 is configured to generate a source high frequency power RF to generate plasma in the chamber (plasma processing chamber 10). The source high frequency power RF has a source frequency of, for example, 13 MHz or more and 150 MHz or less. In one embodiment, the high frequency power supply 31 may include a high frequency signal generator 31g and an amplifier 31a. The high frequency signal generator 31g generates a high frequency signal. The amplifier 31a amplifies the high frequency signal input from the high frequency signal generator 31g to generate the source high frequency power RF and output the source high frequency power RF. The high frequency signal generator 31g may be composed of a programmable processor or a programmable logic device such as an FPGA. A D / A converter may be connected between the high frequency signal generator 31g and the amplifier 31a.

[0035] The high frequency power supply 31 is connected to the high frequency electrode via a matching device 31m. In one embodiment, the base 111e constitutes the high frequency electrode. In another embodiment, the high frequency electrode may be an electrode provided in the electrostatic chuck 111c. The high frequency electrode may be an electrode common to a bias electrode described later. Alternatively, the high frequency electrode may be an upper electrode. The matching device 31m includes a matching circuit. The matching circuit of the matching device 31m has a variable impedance. The matching circuit of the matching device 31m is controlled by the control unit 30c. The impedance of the matching circuit of the matching device 31m is adjusted so as to match the impedance of the load side of the high frequency power supply 31 to the output impedance of the high frequency power supply 31.

[0036] The sensor 31s is configured to output a reflected wave of the source high frequency power RF returned from the load of the high frequency power supply 31 to the control unit 30c. The sensor 31s may be connected between the high frequency power supply 31 and the matching unit 31m. The sensor 31s may be connected between the matching unit 31m and the high frequency electrode. For example, the sensor 31s may be connected between the bias electrode and a junction of an electrical path extending from the matching unit 31m toward the bias electrode and an electrical path extending from a matching unit 32m described later toward the bias electrode. Alternatively, the sensor 31s may be connected between the junction and the matching unit 31m. The sensor 31s includes, for example, a directional coupler. The directional coupler outputs a reflected wave returned from the load of the high frequency power supply 31. The reflected wave output from the directional coupler is converted into a digital signal by A / D conversion, and the digitized reflected wave is used in the control unit 30c. The sensor 31s may be a sensor separated from the matching device 31m, or may be a part of the matching device 31m.

[0037] The bias power supply 32 is electrically connected to the bias electrode. In one embodiment, the base 111e constitutes the bias electrode. In another embodiment, the bias electrode may be an electrode provided in the electrostatic chuck 111c. The bias power supply 32 is configured to provide a pulse BEP of bias energy BE to the bias electrode in each of the multiple pulse periods PP. The bias power supply 32 may specify the timing of each of the multiple pulse periods PP by a signal provided from a pulse controller 34. Note that the control unit 2 may function as the pulse controller 34.

[0038] Here, reference is made to FIG. 3(a), FIG. 3(b), FIG. 4(a), and FIG. 4(b). FIG. 3(a), FIG. 3(b), FIG. 4(a), and FIG. 4(b) are timing charts of an example of source radio frequency power RF and bias energy BE. In these figures, "ON" of source radio frequency power RF indicates that source radio frequency power RF is being supplied, and "OFF" of source radio frequency power RF indicates that the supply of source radio frequency power RF is stopped. In these figures, "ON" of bias energy BE indicates that bias energy BE is being applied to the bias electrode, and "OFF" of bias energy BE indicates that bias energy BE is not being applied to the bias electrode. In these figures, "HIGH" of bias energy BE indicates that bias energy BE having a level higher than the level of bias energy BE indicated by "LOW" is being applied to the bias electrode.

[0039] The multiple pulse periods PP appear in sequence in time. The multiple pulse periods PP may appear in sequence at a time interval (period) that is the inverse of the pulse frequency. In the following description, the pulse period PP(k) represents the k-th pulse period among the multiple pulse periods PP. That is, the pulse period PP(k) represents any pulse period among the multiple pulse periods PP. The pulse frequency is lower than the bias frequency described below, and is, for example, a frequency of 1 kHz or more and 100 kHz or less. As described above, the pulse BEP of the bias energy BE is applied to the bias electrode in each of the multiple pulse periods PP. In periods other than the multiple pulse periods PP, the bias energy BE may not be applied to the bias electrode. Alternatively, the bias energy BE having a level lower than the level of the bias energy BE in the multiple pulse periods PP may be applied to the bias electrode in periods other than the multiple pulse periods PP.

[0040] As shown in Fig. 3(a), the source radio frequency power RF may be supplied as a continuous wave. In the example shown in Fig. 3(a), multiple overlapping periods OP in which the source radio frequency power RF is supplied in multiple pulse periods PP each coincide with multiple pulse periods PP.

[0041] Alternatively, as shown in (b) of FIG. 3, (a) of FIG. 4, and (b) of FIG. 4, a pulse of the source radio frequency power RF may be supplied. The radio frequency power supply 31 may specify the timing of the period during which the pulse of the source radio frequency power RF is supplied by a signal provided from the pulse controller 34. As shown in (b) of FIG. 3, a pulse of the source radio frequency power RF may be supplied in each of a plurality of periods that respectively coincide with the plurality of pulse periods PP. In the example shown in (b) of FIG. 3, a plurality of overlapping periods OP in which the source radio frequency power RF is supplied in the plurality of pulse periods PP respectively coincide with the plurality of pulse periods PP. As shown in (a) of FIG. 4 and (b) of FIG. 4, a pulse of the source radio frequency power RF may be supplied in each of a plurality of periods that respectively partially overlap with the plurality of pulse periods PP. In the examples shown in (a) of FIG. 4 and (b) of FIG. 4, each of a plurality of overlapping periods OP in which the source radio frequency power RF is supplied in the plurality of pulse periods PP is a part of the corresponding pulse period PP among the plurality of pulse periods PP. In the following description, an overlapping period OP(k) represents the k-th overlapping period among the plurality of overlapping periods OP. That is, the overlapping period OP(k) represents any overlapping period among the multiple overlapping periods OP.

[0042] The bias energy BE is applied to the bias electrode in each of the plurality of waveform periods CY in each of the plurality of pulse periods PP. That is, the bias energy BE is applied to the bias electrode periodically in each of the plurality of pulse periods PP. Each of the plurality of waveform periods CY is defined by a bias frequency. The bias frequency is, for example, a frequency of 50 kHz or more and 27 MHz or less. The time length of each of the plurality of waveform periods CY is the reciprocal of the bias frequency. The plurality of waveform periods CY appear in order in time. In the following description, a waveform period CY(m) represents the m-th waveform period among the plurality of waveform periods CY in each of the plurality of overlap periods OP. Also, a waveform period CY(k,m) represents the m-th waveform period in the k-th overlap period. That is, a waveform period CY(m) represents any waveform period among the plurality of waveform periods CY.

[0043] Here, reference is made to FIG. 5 and FIG. 6. FIG. 5 is a timing chart of an example of the source frequency of the bias energy and the source high frequency power. FIG. 6 is a timing chart of another example of the source frequency of the bias energy and the source high frequency power. As shown in FIG. 5 and FIG. 6, in one embodiment, the bias energy BE may be a bias high frequency power having a bias frequency. The bias high frequency power has a sine wave-like waveform, and one cycle of the bias energy BE is a waveform cycle CY. In this case, as shown in FIG. 2, the bias power supply 32 may include a high frequency signal generator 32g and an amplifier 32a. The high frequency signal generator 32g generates a high frequency signal. The amplifier 32a generates a bias high frequency power by amplifying a high frequency signal input from the high frequency signal generator 32g, and supplies the generated bias high frequency power to the bias electrode as the bias energy BE. The high frequency signal generator 32g may be composed of a programmable processor or a programmable logic device such as an FPGA. A D / A converter may be connected between the high frequency signal generator 32g and the amplifier 32a.

[0044] When the bias energy BE is bias radio frequency power, the bias power supply 32 is connected to the bias electrode via a matching device 32m. The matching device 32m includes a matching circuit. The matching circuit of the matching device 32m has a variable impedance. The matching circuit of the matching device 32m is controlled by the control unit 30c. The impedance of the matching circuit of the matching device 32m is adjusted so as to match the impedance of the load side of the bias power supply 32 to the output impedance of the bias power supply 32.

[0045] FIG. 7 is a timing chart of another example of bias energy. As shown in FIG. 7, in another embodiment, the bias energy BE may include a voltage pulse applied to the bias electrode in each of a plurality of waveform periods CY. The voltage pulse used as the bias energy BE may be a negative voltage pulse as in the example shown in FIG. 7, or may be another voltage pulse. The voltage pulse used as the bias energy BE may have a waveform such as a triangular wave or a rectangular wave. The voltage pulse may have any other pulse waveform. When a voltage pulse is used as the bias energy BE, a filter that blocks the source radio frequency power RF may be connected between the bias power supply 32 and the bias electrode instead of the matching device 32m shown in FIG. 2.

[0046] The bias power supply 32 is synchronized with the high frequency power supply 31. A synchronization signal used for this purpose may be provided from the bias power supply 32 to the high frequency power supply 31. Alternatively, the synchronization signal may be provided from the high frequency power supply 31 to the bias power supply 32. Alternatively, the synchronization signal may be provided to the high frequency power supply 31 and the bias power supply 32 from another device such as the control unit 30c.

[0047] The control unit 30c is configured to control the high frequency power supply 31. The control unit 30c may be configured with a processor such as a CPU. The control unit 30c may be a part of the matching device 31m, may be a part of the high frequency power supply 31, or may be a control unit separated from the matching device 31m and the high frequency power supply 31. Alternatively, the control unit 2 may also function as the control unit 30c.

[0048] The control unit 30c is configured to set a source frequency of the source radio frequency power RF in each of the multiple phase periods SP in each of the multiple waveform periods CY included in each of the multiple overlap periods OP. The source frequency of the source radio frequency power RF supplied in periods other than the multiple overlap periods OP may be set using a time series of frequencies registered in a previously prepared table. In the following, an embodiment in which the control unit 30c sets the source frequency will be described. However, when the control unit 30c is a part of the radio frequency power source 31, the radio frequency power source 31 may set the source frequency.

[0049] [Setting the source frequency of the source radio frequency power RF during the overlap period OP(1) to OP(T-1) (intra-pulse feedback)]

[0050] First, the setting of the source frequency of the source radio frequency power RF in the first overlap period OP, i.e., the overlap period OP(1), will be described. The control unit 30c is configured to set the source frequency of the source radio frequency power RF in each of the multiple phase periods SP in each of the multiple waveform periods CY in the overlap period OP(1). In the example shown in FIG. 5 and FIG. 6, each of the multiple waveform periods CY in the overlap period OP(1) includes N phase periods SP(1) to SP(N). N is an integer equal to or greater than 2. The N phase periods SP(1) to SP(N) divide each of the multiple waveform periods CY into N phase periods. In each of the multiple waveform periods CY, the multiple phase periods SP may have the same time length or may have different time lengths. In the following description, the phase period SP(n) represents the n-th phase period among the phase periods SP(1) to SP(N). That is, the phase period SP(n) represents any phase period in each of the multiple waveform periods CY in each of the multiple overlap periods OP. Phase period SP(m,n) represents the nth phase period in waveform period CY(m), and phase period SP(k,m,n) represents the nth phase period in waveform period CY(m) within the kth overlap period OP(k).

[0051] In the overlap period OP(1), the control unit 30c sets the source frequency of the source radio frequency power RF in the phase period SP(m,n) by intra-pulse feedback. For generalization, the intra-pulse feedback applied to the overlap period OP(k) will be described below. In the case of the overlap period OP(1), k is 1 in the intra-pulse feedback described below.

[0052] In intra-pulse feedback, the control unit 30c adjusts the source frequency of the source high frequency power RF in the phase period SP(k,m,n) according to a change in the degree of reflection of the source high frequency power RF. In one example, the degree of reflection of the source high frequency power RF is represented by the power level Pr of the reflected wave of the source high frequency power RF output from the sensor 31s. In intra-pulse feedback, the change in the degree of reflection is identified by using different source frequencies of the source high frequency power RF in the corresponding phase periods SP(n) in two or more waveform periods CY prior to the waveform period CY(k,m) within the overlap period OP(k).

[0053] Intra-pulse feedback can specify the relationship between a change in source frequency (frequency shift) and a change in the degree of reflection of the source high frequency power by using different source frequencies in the phase periods SP(n) in each of two or more waveform periods CY. Therefore, with intra-pulse feedback, it is possible to adjust the source frequency used in the phase periods SP(k,m,n) in response to the change in the degree of reflection so as to reduce the degree of reflection. Also, with intra-pulse feedback, it is possible to quickly reduce the degree of reflection in each of the multiple waveform periods CY in which bias energy BE is applied to the bias electrode of the substrate support 11 in the overlap period OP(k).

[0054] In one embodiment, the two or more waveform periods CY prior to waveform period CY(k,m) include waveform period CY(k,m-M1) and waveform period CY(k,m-M2), where M1 and M2 are any natural numbers such that M1>M2. That is, waveform period CY(k,m-M2) is the waveform period following waveform period CY(k,m-M1).

[0055] In one embodiment, the waveform period CY(k,m-M1) may be a waveform period CY(k,m-2Q), and the waveform period CY(k,m-M2) may be a waveform period CY(k,mQ). Note that Q is a natural number. In the example shown in FIG. 5, "Q" and "M2" are "1", and "2Q" and "M1" are "2". "Q" may be an integer equal to or greater than 2.

[0056] In intra-pulse feedback, the control unit 30c gives the source frequency f(k,m-M2,n) one frequency shift from the source frequency f(k,m-M1,n). Here, f(k,m,n) represents the source frequency of the source radio frequency power RF used in the phase period SP(k,m,n). f(k,m,n) is expressed as f(k,m,n)=f(k,m-M2,n)+Δ(k,m,n). Δ(k,m,n) represents the amount of frequency shift. One frequency shift is one of a frequency decrease and a frequency increase. If one frequency shift is a frequency decrease, Δ(k,m,n) has a negative value. If one frequency shift is a frequency increase, Δ(k,m,n) has a positive value.

[0057] 5 and 6, the source frequencies in the phase periods SP in the waveform period CY(k,m-M1) are the same and are set to f0, but may be different from each other. Also, in FIG. 5 and 6, the source frequencies in the phase periods SP in the waveform period CY(k,m-M2) are the same and are set to a frequency reduced from f0, but may be increased from f0.

[0058] In the case where the degree of reflection is reduced by using the source frequency f(k,m-M2,n) obtained by one frequency shift in the intra-pulse feedback, the control unit 30c sets the source frequency f(k,m,n) to a frequency having one frequency shift with respect to the source frequency f(k,m-M2,n). For example, when the power level Pr(k,m-M2,n) is reduced from the power level Pr(k,m-M1,n) by one frequency shift, the control unit 30c sets the source frequency f(k,m,n) to a frequency having one frequency shift with respect to the source frequency f(k,m-M2,n). Note that Pr(k,m,n) represents the power level Pr of the reflected wave of the source high frequency power RF in the phase period SP(k,m,n).

[0059] In one embodiment, the amount of one frequency shift Δ(m,n) in the phase period SP(k,m,n) may be the same as the amount of one frequency shift Δ(m-M2,n) in the phase period SP(k,m-M2,n). That is, the absolute value of the amount of frequency shift Δ(k,m,n) may be the same as the absolute value of the amount of frequency shift Δ(k,m-M2,n). Alternatively, the absolute value of the amount of frequency shift Δ(k,m,n) may be greater than the absolute value of the amount of frequency shift Δ(k,m-M2,n). Alternatively, the absolute value of the amount of frequency shift Δ(k,m,n) may be set so that it becomes larger as the degree of reflection in the phase period SP(k,m-M2,n) (for example, the power level Pr(k,m-M2,n) of the reflected wave) becomes larger. For example, the absolute value of the amount of frequency shift Δ(k,m,n) may be determined as a function of the degree of reflection (for example, the power level Pr(k,m−M2,n) of the reflected wave).

[0060] In intra-pulse feedback, the degree of reflection may increase by using the source frequency f(k,m-M2,n) obtained by one of the frequency shifts. For example, the power level Pr(k,m-M2,n) of the reflected wave may increase from the power level Pr(k,m-M1,n) of the reflected wave by one of the frequency shifts. In this case, the control unit 30c may set the source frequency f(k,m,n) to a frequency having the other frequency shift with respect to the source frequency f(k,m-M2,n). Note that the source frequency of each phase period SP(n) of two or more waveform periods preceding the waveform period CY(k,m) may be updated to have one frequency shift with respect to the source frequency of the phase period SP(n) of the preceding waveform period. In this case, if the degree of reflection (e.g., the power level Pr of the reflected wave) of each of the phase periods SP(n) of the two or more waveform periods or their average values ​​tend to increase, the other frequency shift may be imparted to the source frequency of the phase period SP(n) of the waveform period CY(k,m). For example, the source frequency of the phase period SP(n) of the waveform period CY(k,m) may be set to a frequency having the other frequency shift with respect to the source frequency of the earliest waveform period of the two or more waveform periods.

[0061] In addition, in intra-pulse feedback, when the source frequency f(k,m,n) obtained by one frequency shift is used, the degree of reflection may increase. For example, the power level Pr(k,m,n) of the reflected wave may increase from the power level Pr(k,m-M2,n) of the reflected wave due to one frequency shift. In this case, the control unit 30c may set the source frequency in the phase period SP(n) in the waveform period CY(k,m+M3) to an intermediate frequency. The waveform period CY(k,m+M3) is the period after the waveform period CY(k,m). M3 may be a natural number and may satisfy M3=M2. The intermediate frequency that may be set in the phase period SP(k,m+M3,n) is a frequency between f(k,m-M2,n) and f(k,m,n), and may be the average value of f(k,m-M2,n) and f(k,m,n).

[0062] In addition, in the intra-pulse feedback, the degree of reflection (e.g., power level Pr) may be greater than a predetermined threshold value when an intermediate frequency is used in the phase period SP(k,m+M3,n). In this case, the control unit 30c may set the source frequency in the phase period SP(n) in the waveform period CY(k,m+M4) to a frequency having the other frequency shift with respect to the intermediate frequency. The waveform period CY(k,m+M4) is the period following the waveform period CY(k,m+M3). M4 is a natural number and may satisfy M4=M1. The threshold value is determined in advance. The absolute value of the amount of the other frequency shift Δ(1,m+M4,n) is greater than the absolute value of the amount of one frequency shift Δ(1,m,n). In this case, it is possible to avoid the degree of reflection (e.g., power level Pr of the reflected wave) being unable to decrease from a local minimum value. It should be noted that the threshold values ​​for each of the multiple phase periods SP in each of the multiple waveform periods CY within the overlap period OP(k) may be the same as or different from each other.

[0063] The setting of the source frequency in the overlap period OP(k) (k is 2 or more and T-1 or less, T is an integer 3 or more) will be described below. The source frequency of multiple phase periods SP in multiple waveform periods CY in the overlap period OP(k) may be set by the intra-pulse feedback described above. In setting the source frequency of multiple phase periods SP in waveform period CY(1) in the overlap period OP(k), the waveform period CY(M-1) and waveform period CY(M) in the overlap period OP(k-1) may be used as waveform period CY(k,m-M1) and waveform period CY(k,m-M2). In addition, the waveform period CY(M) is the last waveform period in each overlap period. In addition, when setting the source frequency of the source radio frequency power RF for multiple phase periods SP in the waveform period CY(2) within the overlap period OP(k), the waveform period CY(M) within the overlap period OP(k-1) and the waveform period CY(1) within the overlap period OP(k) may be used as the waveform period CY(k,m-M1) and the waveform period CY(k,m-M2).

[0064] In another embodiment, the source frequencies of multiple phase periods SP in multiple waveform periods CY within an overlap period OP(k) (k is 1 or more and T-1 or less, and T is an integer 3 or more) may be set using respective frequencies registered in a pre-prepared table.

[0065] [Setting the source frequency of the source radio frequency power RF during the overlap period after the overlap period OP(T) (inter-pulse feedback)]

[0066] Setting of the source frequency of the source radio frequency power RF in the T-th (T is an integer equal to or greater than 3) overlap period OP(k) will be described below with reference to Fig. 8. Fig. 8 is a timing chart of an example of the bias energy and the source frequency of the source radio frequency power.

[0067] The control unit 30c is configured to set the source frequency of the source radio frequency power RF in each of the multiple phase periods SP in each of the multiple waveform periods CY included in each of the multiple overlap periods OP after the second overlap period by pulse-to-pulse feedback.

[0068] In inter-pulse feedback, the control unit 30c adjusts the source frequency f(k,m,n) according to a change in the degree of reflection of the source high frequency power RF. In one example, the degree of reflection of the source high frequency power RF is represented by the power level Pr of the reflected wave of the source high frequency power RF output from the sensor 31s. In inter-pulse feedback, the change in the degree of reflection is identified by using source frequencies of the source high frequency power RF that are different from each other in corresponding phase periods SP(n) in the waveform period CY(m) in two or more overlap periods OP before the overlap period OP(k).

[0069] In inter-pulse feedback, by using different source frequencies in the same phase period in the same waveform cycle in each of two or more overlap periods OP, it is possible to identify the relationship between a change in source frequency (frequency shift) and a change in the degree of reflection of the source high frequency power. Therefore, with inter-pulse feedback, it is possible to adjust the source frequency used in the phase period SP(k,m,n) in response to the change in the degree of reflection so as to reduce the degree of reflection. Also, with intra-pulse feedback, it is possible to quickly reduce the degree of reflection in each of the multiple waveform periods CY in each of the multiple overlap periods OP.

[0070] In one embodiment, the two or more overlapping periods OP before the overlapping period OP(k) include the (k-K1)th overlapping period OP(k-K1) and the (k-K2)th overlapping period OP(k-K2), where K1 and K2 are natural numbers satisfying K1>K2.

[0071] In one embodiment, the overlap period OP(k-K1) is the overlap period OP(k-2). The overlap period OP(k-K2) is the overlap period after the overlap period OP(k-K1), which is the overlap period OP(k-1) in one embodiment. That is, in one embodiment, K2 and K1 are 1 and 2, respectively.

[0072] The control unit 30c gives a source frequency f(k-K2,m,n) in the phase period SP(k-K2,m,n) one frequency shift from the source frequency in the phase period SP(k-K1,m,n). Here, f(k,m,n) represents the source frequency of the source radio frequency power RF used in the phase period SP(k,m,n). f(k,m,n) is expressed as f(k,m,n)=f(k-K2,m,n)+Δ(k,m,n). Δ(k,m,n) represents the amount of the frequency shift. One of the frequency shifts is either a decrease in frequency or an increase in frequency. If one of the frequency shifts is a decrease in frequency, Δ(k,m,n) has a negative value. If one of the frequency shifts is an increase in frequency, Δ(k,m,n) has a positive value.

[0073] In FIG. 8, the source frequencies in each of the multiple phase periods SP in the waveform period CY(2,1) are the same and are set to frequencies decreased from the frequency f0, but may be increased from the frequency f0.

[0074] In the case where the degree of reflection is reduced when using the source frequency f(k-K2,m,n) obtained by one frequency shift in the pulse-to-pulse feedback, the control unit 30c sets the source frequency f(k,m,n) to a frequency having one frequency shift with respect to the source frequency f(k-K2,m,n). For example, when the power level Pr(k-K2,m,n) is reduced from the power level Pr(k-K1,m,n) by one frequency shift, the control unit 30c sets the source frequency f(k,m,n) to a frequency having one frequency shift with respect to the source frequency f(k-K2,m,n). Note that Pr(k,m,n) represents the power level Pr of the reflected wave of the source high frequency power RF in the phase period SP(k,m,n). Note that the source frequency of each phase period SP(m,n) of two or more overlap periods before the overlap period OP(k) may be updated to have one frequency shift with respect to the source frequency of the phase period SP(m,n) of the previous overlap period. In this case, if the degree of reflection (e.g., the power level Pr of the reflected wave) of each of the phase periods SP(m,n) of the two or more overlap periods or their average values ​​are on the increase, the other frequency shift may be imparted to the source frequency of the phase period SP(m,n) of the overlap period OP(k). For example, the source frequency of the phase period SP(m,n) of the overlap period OP(k) may be set to a frequency having the other frequency shift with respect to the source frequency of the earliest overlap period among the two or more overlap periods.

[0075] In one embodiment, the amount of one frequency shift Δ(m,n) in the phase period SP(k,m,n) may be the same as the amount of one frequency shift Δ(k-K2,m,n) in the phase period SP(k-K2,m,n). That is, the absolute value of the amount of frequency shift Δ(k,m,n) may be the same as the absolute value of the amount of frequency shift Δ(k-K2,m,n). Alternatively, the absolute value of the amount of frequency shift Δ(k,m,n) may be greater than the absolute value of the amount of frequency shift Δ(k-K2,m,n). Alternatively, the absolute value of the amount of frequency shift Δ(k,m,n) may be set to be greater as the degree of reflection in the phase period SP(k-K2,m,n) (for example, the power level Pr(k-K2,m,n) of the reflected wave) increases. For example, the absolute value of the amount of frequency shift Δ(k, m, n) may be determined as a function of the degree of reflection (the power level Pr(k−1, m, n) of the reflected wave).

[0076] In pulse-to-pulse feedback, the degree of reflection may increase by using the source frequency f(k-K2,m,n) obtained by one frequency shift. For example, the power level Pr(k-1,m,n) of the reflected wave may increase from the power level Pr(k-2,m,n) of the reflected wave by one frequency shift. In this case, the control unit 30c may set the source frequency f(k,m,n) to a frequency having the other frequency shift with respect to the source frequency f(k-K2,m,n).

[0077] In addition, in the pulse-to-pulse feedback, when the source frequency f(k,m,n) obtained by one frequency shift is used, the degree of reflection may increase. For example, the power level Pr(k,m,n) of the reflected wave may increase from the power level Pr(k-K2,m,n) of the reflected wave by one frequency shift. In this case, the control unit 30c may set the source frequency in the phase period SP(k+K3,m,n) to an intermediate frequency. That is, in this case, the source frequency in the phase period SP(n) in the waveform period CY(m) in the overlap period OP(k+K3) may be set to an intermediate frequency. The overlap period OP(k+K3) is the period after the overlap period OP(k). K3 is a natural number and may satisfy K3=K2. The intermediate frequency that may be set in phase period SP(k+K3,m,n) is a frequency between f(k-K2,m,n) and f(k,m,n), and may be the average value of f(k-K2,m,n) and f(k,m,n).

[0078] In addition, in the pulse-to-pulse feedback, the degree of reflection (for example, power level Pr) when the above-mentioned intermediate frequency is used in the phase period SP(k+K3,m,n) may be greater than a predetermined threshold. In this case, the control unit 30c may set the source frequency in the phase period SP(k+K4,m,n) to a frequency having the other frequency shift with respect to the intermediate frequency. That is, in this case, the other frequency shift may be given to the source frequency in the phase period SP(n) in the waveform period CY(m) in the overlap period OP(k+K4). The overlap period OP(k+K4) is the period after the overlap period OP(k+K3). K4 is a natural number that satisfies K4>K3, and may also satisfy K4=K1. The threshold is predetermined. The absolute value of the amount of the other frequency shift Δ(k+K4,m,n) is greater than the absolute value of the amount of one frequency shift Δ(k,m,n). In this case, it is possible to avoid the inability to reduce the degree of reflection (for example, the power level Pr of the reflected wave) from a local minimum value. Note that the thresholds for each of the multiple phase periods SP in each of the multiple waveform periods CY within the multiple overlap periods OP may be the same as or different from each other.

[0079] The plasma processing apparatus 1 may use a representative value of the measured values ​​in each phase period as the degree of reflection in each phase period. The representative value may be an average value or a maximum value of the measured values ​​in each phase period. The plasma processing apparatus 1 may also use at least one of the above-mentioned power level Pr of the reflected wave, the ratio of the power level Pr of the reflected wave to the output power level of the source high frequency power RF (hereinafter referred to as "reflectance"), the phase difference θ between the voltage V and the current I, and the impedance Z on the load side of the high frequency power supply 31 as the measured value.

[0080] The plasma processing apparatus 1 may include a VI sensor in addition to the above-mentioned sensor 31s or instead of the sensor 31s. The VI sensor measures a voltage V and a current I in a power supply path of the source radio frequency power RF between the radio frequency power supply 31 and the radio frequency electrode. The VI sensor may be connected between the radio frequency power supply 31 and the matching device 31m. The VI sensor may be connected between the matching device 31m and the radio frequency electrode. For example, the VI sensor may be connected between the bias electrode and a junction of an electrical path extending from the matching device 31m toward the bias electrode and an electrical path extending from the matching device 32m toward the bias electrode. Alternatively, the VI sensor may be connected between the junction and the matching device 31m. The VI sensor may be a part of the matching device 31m.

[0081] The source frequency for each of the multiple phase periods SP of each waveform cycle CY may be changed according to the voltage V, the current I, and the phase difference θ between the voltage V and the current I so as to bring the impedance on the load side of the high frequency power supply 31 closer to the matching point. Also, the variable impedance of the matching box 31m may be adjusted according to the voltage V, the current I, and the phase difference θ so as to bring the impedance Z on the load side of the high frequency power supply 31 closer to the matching point. When the characteristic impedance of the power supply path of the source high frequency power RF is 50Ω, the real resistance component of the matching point is 50Ω, and the phase difference θ is 0°.

[0082] Hereinafter, a method for controlling the source frequency of source high frequency power according to an exemplary embodiment will be described with reference to Fig. 9. Fig. 9 is a flow chart of a method for controlling the source frequency of source high frequency power according to an exemplary embodiment. The method MT shown in Fig. 9 starts with step STa or step STb. In step STa, a pulse BEP of bias energy BE is applied to a bias electrode of the substrate support 11 of the plasma processing apparatus 1. The pulse BEP of bias energy BE is applied to the bias electrode in each of a plurality of pulse periods PP.

[0083] In step STb, a source high frequency power RF is supplied from a high frequency power source (e.g., the high frequency power source 31) to generate plasma in the chamber. The source high frequency power RF is supplied as shown in (a) of FIG. 3, (b) of FIG. 3, (a) of FIG. 4, and (b) of FIG. 4.

[0084] In step STc, a source frequency of the source radio frequency power RF used in each of the multiple phase periods SP in each of the multiple waveform periods CY included in each of the multiple overlap periods OP is set. In the inter-pulse feedback, the source frequency in the phase period SP(k,m,n) in the waveform period CY(m) in the overlap period OP(k) is adjusted according to the change in the degree of reflection of the source radio frequency power. In the inter-pulse feedback, the change in the degree of reflection (e.g., the power level Pr of the reflected wave) is determined by using different source frequencies in the corresponding phase periods SP(n) in the waveform period CY(m) in each of two or more overlap periods before the overlap period OP(k). For the inter-pulse feedback, please refer to the above description.

[0085] Hereinafter, reference will be made to (a) to (d) of FIG. 10. Each of (a) to (d) of FIG. 10 is a timing chart of yet another example of bias energy. In one embodiment, the multiple overlap periods OP are 1 to K a The overlapping period OP(1)~OP(K a ), where K a is a natural number greater than or equal to 2.

[0086] The high frequency power source 31 is a power supply for the overlapping periods OP(1) to OP(K a ) the first to Mth waveform periods CY included in each of a The th waveform period CY(1)~CY(M a ), initial processing may be performed in each of M a is a natural number. In the initial processing, the waveform periods CY(1) to CY(M a ) may be used, and the frequency sets included in the frequency set group may be different from each other. a A plurality of frequency set groups for each of the above may be used, and the plurality of frequency set groups may be different from each other. Note that the plurality of frequency sets and the plurality of frequency set groups may be stored in a storage unit of the control unit 2 or the control unit 30c.

[0087] The high frequency power source 31 is a power supply for the overlapping periods OP(1) to OP(K a ), among the multiple waveform periods CY, a After the overlapping periods OP(1) to OP(K), the above-mentioned intra-pulse feedback may be performed. a ) a In CY(M) through CY(M+1), the above-mentioned intra-pulse feedback may be performed.

[0088] In one embodiment, the multiple overlapping periods OP are (K a +1) to K b The overlap period OP(K a +1)~OP(K b ), where K b is (K a +1), and K b =K a You may fill +1.

[0089] The high frequency power supply 31 is aa +1)~OP(K b ) the first to Mth waveform periods CY included in each of b1 The th waveform period CY(1)~CY(M b1 ) may be subjected to the above-mentioned initial processing. b1 is a natural number. b1 and M a is M b1 <M a may be satisfied.

[0090] The high frequency power supply 31 is a +1)~OP(K b ) among the multiple waveform periods CY included in each of (M b1 +1)th to M b2 The th waveform period CY(M b1 +1)~CY(M b2 ), the above-mentioned pulse-to-pulse feedback may be performed. b2 is M b2 >M b1 is a natural number that satisfies.

[0091] The high frequency power supply 31 is a +1)~OP(K b ) for each of the waveform periods CY(M b2 ), the above-mentioned intra-pulse feedback may be performed after the overlap period OP(K a +1)~OP(K b ) b2 In CY(M) through CY(M+1), the above-mentioned intra-pulse feedback may be performed.

[0092] In addition, the high frequency power supply 31 is (K b +1)th to last overlapping period OP(K b +1) to OP(K) c The th waveform period CY(1)~CY(M c ), the above-mentioned pulse-to-pulse feedback may be performed. cis a natural number. In addition, the high frequency power supply 31 has an overlap period OP(K b +1) to OP(K), the waveform period CY(M c ), the above-mentioned intra-pulse feedback may be performed after the overlap period OP(K b +1) to OP(K) c In CY(M) through CY(M+1), the above-mentioned intra-pulse feedback may be performed.

[0093] In one embodiment, the high frequency power supply 31 generates a waveform period CY(M F The source frequency in a phase period SP(n) in the waveform period CY(M) may be set to the source frequency of the same phase period SP(n) in the last waveform period CY(M) included in the overlap period immediately preceding the at least one overlap period. F ) is a waveform period to which intra-pulse feedback is applied first among the multiple waveform periods CY in the at least one overlapping period. Alternatively, the high frequency power supply 31 may apply the waveform period CY(M F The source frequency in a phase period SP(n) in the at least one overlap period may be set to the average of the source frequencies in the same phase period SP(n) of two or more waveform periods including the last waveform period CY(M) included in the overlap period immediately preceding the at least one overlap period. The two or more waveform periods may include the last waveform period CY(M) included in the overlap period immediately preceding the at least one overlap period. L +1) to CY(M), where M L is the number of the two or more waveform periods.

[0094] In one embodiment, the above-mentioned M a , M b1 , M b2 , and M c Each of the parameters may be a preset value, i.e., M a and M b1, and the number of waveform periods to which pulse-to-pulse feedback is applied, M b2 and M c may be preset.

[0095] Alternatively, the high frequency power supply 31 may be configured to terminate the initial process when a monitor value reflecting the degree of reflection falls within a specified range during the initial process. Also, the high frequency power supply 31 may be configured to terminate the initial process when a monitor value reflecting the degree of reflection falls within a specified range during the pulse-to-pulse feedback.

[0096] One or more measured values ​​may be used as the monitor value. Alternatively, the amount of change (rate of change or difference) between waveform periods of the average value of each of one or more measured values ​​in the same phase period may be used as the monitor value. Alternatively, the amount of change over time (rate of change or difference) between waveform periods of the average value of each of one or more measured values ​​in the same phase period of several waveform periods may be used as the monitor value. Alternatively, the amount of change (rate of change or difference) between waveform periods of the average value of each of one or more measured values ​​in the same phase period of several waveform periods may be used as the monitor value. Alternatively, the variation in one or more waveform periods of each of one or more measured values ​​or the variation in one or more waveform periods of each of one or more measured values ​​in the same phase period of several waveform periods may be used as the monitor value. The one or more measured values ​​may include one or more of the power level Pr of the reflected wave, the reflectance described above, the phase difference θ between the voltage V and the current I, the impedance Z, the Vpp (Peak-to-Peak Voltage) of the bias electrode, the self-bias voltage Vdc of the bias electrode, and the light emission state of the plasma.

[0097] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0098] As described above, in other embodiments, the plasma processing apparatus may be an inductively coupled plasma processing apparatus, an ECR plasma processing apparatus, a helicon wave excited plasma processing apparatus, or a surface wave plasma processing apparatus. In any of the plasma processing apparatuses, a source radio frequency power RF is used to generate the plasma, and the source frequency used in the multiple phase periods SP of the multiple waveform periods CY is adjusted as described above with respect to the plasma processing apparatus 1.

[0099] In addition, in intra-pulse feedback, the source frequency of the source radio frequency power RF in the phase period SP(k,m,n) may be determined as a frequency that minimizes the degree of reflection from two or more degrees of reflection (e.g., power levels Pr) obtained by using different source frequencies of the source radio frequency power RF in the corresponding phase periods SP(n) in two or more waveform periods CY prior to the waveform period CY(k,m) in the overlap period OP(k). The frequency that minimizes the degree of reflection may be determined by a least squares method using each of the different frequencies and the corresponding degrees of reflection.

[0100] Also, in the inter-pulse feedback, the source frequency f(k,m,n) may be determined as a frequency that minimizes the degree of reflection from two or more degrees of reflection (e.g., power levels Pr) obtained by using source frequencies of source radio frequency power RF different from each other in corresponding phase periods SP(n) in waveform periods CY(m) in two or more overlap periods OP before the overlap period OP(k). The frequency that minimizes the degree of reflection may be determined by a least squares method using each of the different frequencies and the corresponding degrees of reflection.

[0101] The present disclosure also includes the following further embodiments E1 to E9. [E1] A chamber; a substrate support disposed within the chamber and having a bias electrode; a radio frequency power source configured to generate radio frequency power to generate a plasma in the chamber; a bias power supply configured to provide a pulse of bias energy to the bias electrode during each of a plurality of pulse periods; a sensor configured to output a reflected wave of the high frequency power returned from a load of the high frequency power source; A control unit configured to control the high frequency power source; Equipped with the bias power supply is configured to provide the bias energy to the bias electrode during each of a plurality of periods within each of the plurality of pulse periods; The control unit is a frequency of the high frequency power in each of a plurality of phase periods in each of a plurality of cycles included in each of a plurality of overlap periods, which are periods during which the high frequency power is supplied in the plurality of pulse periods; a frequency of the high frequency power in an n-th phase period in an m-th cycle in a k-th overlap period among the plurality of overlap periods is adjusted in accordance with a change in the power level of the reflected wave output from the sensor when different frequencies of the high frequency power are used in corresponding phase periods in an m-th cycle in each of two or more overlap periods prior to the k-th overlap period among the plurality of overlap periods. Plasma processing equipment. [E2] the two or more overlapping periods include a first overlapping period and a second overlapping period subsequent to the first overlapping period; The plasma processing apparatus of embodiment E1, wherein the control unit is configured, when the power level of the reflected wave is reduced by imparting a frequency shift of either a decrease or an increase to the frequency of the high frequency power in the nth phase period in the mth period within the second overlap period from the frequency of the high frequency power in the nth phase period in the mth period within the first overlap period, to set the frequency of the high frequency power in the nth phase period in the mth period within the kth overlap period to a frequency having the one of the frequency shifts relative to the frequency of the high frequency power in the nth phase period in the mth period within the second overlap period. [E3] the control unit is configured to set the frequency of the high frequency power in the n-th phase period in the m-th cycle within the k-th overlap period to the frequency having the one frequency shift with respect to the frequency of the high frequency power in the n-th phase period in the m-th cycle within the second overlap period, so that when a power level of the reflected wave increases, the control unit sets the frequency of the high frequency power in the n-th phase period in the m-th cycle within a third overlap period after the k-th overlap period among the multiple overlap periods to an intermediate frequency between the frequency of the high frequency power in the n-th phase period in the m-th cycle within the second overlap period and the frequency of the high frequency power in the n-th phase period in the m-th cycle within the k-th overlap period. The plasma processing apparatus of embodiment E2. [E4] The plasma processing apparatus of embodiment E3, wherein the control unit is configured to set the frequency of the high-frequency power in the n-th phase period in the m-th period in a fourth overlap period after the third overlap period among the multiple overlap periods to a frequency having another frequency shift with an absolute value greater than the absolute value of the amount of one of the frequency shifts relative to the intermediate frequency when the power level of the reflected wave is greater than a threshold value in the n-th phase period in the m-th period in the third overlap period. [E5] A plasma processing apparatus of embodiment E2, wherein the absolute value of the amount of one of the frequency shifts of the frequency of the high frequency power in the nth phase period in the mth cycle within the kth overlap period is greater than the absolute value of the amount of the one of the frequency shifts of the frequency of the high frequency power in the nth phase period in the mth cycle within the second overlap period. [E6] the two or more overlapping periods include a first overlapping period and a second overlapping period subsequent to the first overlapping period; the control unit is configured, when a power level of the reflected wave is increased by imparting one of a frequency shift of a decrease and an increase from the frequency of the high frequency power in the nth phase period in the mth period in the first overlap period to the frequency of the high frequency power in the nth phase period in the mth period in the first overlap period, to set the frequency of the high frequency power in the nth phase period in the mth period in the kth overlap period to a frequency having the other frequency shift with respect to the frequency of the high frequency power in the nth phase period in the mth period in the second overlap period. The plasma processing apparatus of embodiment E1. [E7] A plasma processing apparatus according to any one of embodiments E1 to E6, wherein the bias energy is high-frequency power having a bias frequency that defines the multiple periods, or includes a voltage pulse applied to the bias electrode in each of the multiple periods defined by the bias frequency. [E8] A method for controlling a frequency of radio frequency power, comprising the steps of: providing a pulse of bias energy to a bias electrode of a substrate support disposed within a chamber of a plasma processing apparatus during each of a plurality of pulse periods, the pulse of bias energy including bias energy provided to the bias electrode during each of a plurality of periods within each of the plurality of pulse periods; providing said radio frequency power from a radio frequency power source to generate a plasma in said chamber; setting a frequency of the high frequency power in each of a plurality of phase periods in each of a plurality of cycles included in each of a plurality of overlap periods, which are periods during which the high frequency power is supplied in the plurality of pulse periods; Including, A method in which the frequency of the high frequency power in an nth phase period in an mth cycle in a kth overlapping period among the multiple overlapping periods is adjusted in accordance with a change in the power level of the reflected wave of the high frequency power when different frequencies of the high frequency power are used in corresponding phase periods in the mth cycle in each of two or more overlapping periods prior to the kth overlapping period among the multiple overlapping periods.

[0102] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0103] 1: plasma processing apparatus, 10: plasma processing chamber, 11: substrate support, 31: high frequency power supply, 32: bias power supply, 31s: sensor, 30c: control unit.

Claims

1. A plasma processing chamber; a substrate support disposed within the plasma processing chamber; A bias electrode provided within the substrate support; a first radio frequency power source coupled to the plasma processing chamber and configured to generate a first radio frequency power, the first radio frequency power including a plurality of first states that are periodically repeated; a bias power supply configured to provide bias energy to the bias electrode, the bias energy including a plurality of periodically repeated second states, the plurality of second states having a plurality of overlapping periods that respectively overlap with the plurality of first states, each of the plurality of overlapping periods having a plurality of cycles; A sensor configured to output a parameter related to at least one degree of reflection in a power supply path of the first high frequency power; A control unit; Equipped with The control unit is configured to set a frequency of the first radio frequency power in each of a plurality of periods within each cycle of the bias energy; configured to adjust the frequency in an n-th period in an m-th cycle of the plurality of cycles in a k-th overlapping period of the plurality of overlapping periods based on an output of the sensor in an n-th period in the m-th cycle of the plurality of cycles in one or more overlapping periods prior to the k-th overlapping period of the plurality of overlapping periods. Plasma processing equipment.

2. The plasma processing apparatus of claim 1, wherein the sensor is a directional coupler configured to output a reflected wave returned from a load of the first high frequency power supply.

3. The plasma processing apparatus of claim 1, wherein the sensor is a VI sensor configured to measure the voltage and current in the power supply path of the first high frequency power.

4. A plasma processing apparatus as described in claim 1, wherein the at least one parameter related to the degree of reflection includes at least one of the power level of the reflected wave of the first high frequency power, the ratio of the power level of the reflected wave to the output power level of the first high frequency power, the phase difference θ between the voltage and current of the first high frequency power, and the impedance on the load side of the first high frequency power source.

5. A plasma processing apparatus as described in any one of claims 1 to 4, wherein the first high-frequency power has multiple frequency components simultaneously in one or more cycles prior to the mth cycle.

6. A plasma processing apparatus as described in any one of claims 1 to 4, wherein the first high-frequency power has a different frequency from each other in two or more cycles prior to the mth cycle.

7. The plasma processing apparatus of claim 1, wherein the bias energy has a second high frequency power.

8. The plasma processing apparatus of claim 1, wherein the bias energy comprises a voltage pulse.

9. A plasma processing apparatus as described in any one of claims 1 to 8, wherein the multiple periods in each of the multiple cycles have the same number and length across the multiple cycles.

10. A plasma processing apparatus as described in any one of claims 1 to 9, wherein the first high frequency power has a frequency of 13 MHz to 150 MHz, and the multiple cycles are defined by a frequency of 50 kHz to 27 MHz.

11. A plasma processing chamber; a substrate support disposed within the plasma processing chamber; A bias electrode provided within the substrate support; a first radio frequency power source coupled to the plasma processing chamber and configured to generate a first radio frequency power; a second radio frequency power source configured to provide a second radio frequency power having a plurality of cycles to the bias electrode; A sensor configured to output at least one parameter in a power supply path of the first high frequency power; a control unit configured to individually set a frequency of the first high frequency power in each of a plurality of periods within each cycle of the second high frequency power based on an output of the sensor; A plasma processing apparatus comprising:

12. The plasma processing apparatus of claim 11, wherein the sensor is a directional coupler configured to output a reflected wave returned from a load of the first high frequency power supply.

13. The plasma processing apparatus of claim 11, wherein the sensor is a VI sensor configured to measure the voltage and current in the power supply path of the first high frequency power.

14. A plasma processing apparatus as described in claim 11, wherein the at least one parameter includes at least one of the power level of the reflected wave of the first high frequency power, a ratio of the power level of the reflected wave to the output power level of the first high frequency power, a phase difference θ between the voltage and current of the first high frequency power, and an impedance on the load side of the first high frequency power source.

15. A plasma processing apparatus as described in any one of claims 11 to 14, wherein the first high frequency power has a frequency of 13 MHz to 150 MHz, and the multiple cycles are defined by a frequency of 50 kHz to 27 MHz.

16. A plasma processing chamber; a substrate support disposed within the plasma processing chamber; A bias electrode provided within the substrate support; a radio frequency power source coupled to the plasma processing chamber and configured to generate radio frequency power; a voltage pulse generator configured to apply a voltage pulse signal having a plurality of cycles to the bias electrode; A sensor configured to output at least one parameter in the power supply path of the high frequency power; a control unit configured to individually set a frequency of the high frequency power in each of a plurality of periods within each cycle of the voltage pulse signal based on an output of the sensor; A plasma processing apparatus comprising:

17. The plasma processing apparatus of claim 16, wherein the sensor is a directional coupler configured to output a reflected wave returned from a load of the high frequency power supply.

18. The plasma processing apparatus of claim 16, wherein the sensor is a VI sensor configured to measure the voltage and current in the power supply path of the high frequency power.

19. A plasma processing apparatus as described in claim 16, wherein the at least one parameter includes at least one of the power level of the reflected wave of the high frequency power, the ratio of the power level of the reflected wave to the output power level of the high frequency power, the phase difference θ between the voltage and current of the high frequency power, and the impedance on the load side of the high frequency power supply.

20. A plasma processing apparatus described in any one of claims 16 to 19, wherein the high-frequency power has a frequency of 13 MHz to 150 MHz, and the multiple cycles are defined by a frequency of 50 kHz to 27 MHz.

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