Film forming apparatus and method for manufacturing electronic device

Abstract

To provide a technique which can improve an alignment precision of a substrate on a film deposition apparatus.SOLUTION: A film deposition apparatus which deposits a film on a substrate includes an electrostatic chuck which suctions the substrate, magnetic force generation means which is disposed to face a surface opposite to a suction surface of the substrate in the electrostatic chuck and generates magnetic force for attracting a mask toward the substrate suctioned by the electrostatic chuck, and temperature control means. The electrostatic chuck, the magnetic force generation means, and the temperature control means are arranged in this order in a direction crossing the suction surface.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a substrate holding device for use in a film forming apparatus. [Background technology]

[0002] In recent years, flat panel display devices such as organic electroluminescence (EL) display devices have been used as display screens for monitors, televisions, smartphones, etc. The panel of an organic EL display device has a structure in which an organic layer that emits light is formed between two opposing electrodes (a cathode electrode and an anode electrode). When forming an organic EL display panel using a film formation device, the periphery of the substrate is held by a substrate holder placed in the chamber of the film formation device, and an evaporation source installed at the bottom of the chamber is heated to release a metal or organic evaporation material, which is then evaporated onto the underside of the substrate through a mask.

[0003] Here, the substrate, whose peripheral portion is held, may bend at its center due to its own weight. As the substrate size increases, the bending of the center portion also becomes larger, and the effect on deposition accuracy also becomes greater. As a method for reducing such bending of the substrate, Patent Document 1 proposes a technique for holding the substrate using an electrostatic chuck (ESC). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-099910 A Summary of the Invention [Problem to be solved by the invention]

[0005] The evaporation source in the deposition chamber is very hot, and there is a large temperature difference between the evaporation source and other components in the deposition chamber. Therefore, it is difficult to control the temperature of the electrostatic chuck, substrate, and mask, and they may deform or change in size due to thermal expansion. The effect of this size change may cause a decrease in alignment accuracy and a deterioration in film quality.

[0006] An object of the present invention is to provide a technique capable of controlling the temperature with high accuracy in a film forming apparatus. [Means for solving the problem]

[0007] In order to solve the above problems, the film forming apparatus of the present invention comprises: A film forming apparatus for forming a film on a substrate, an electrostatic chuck for adsorbing the substrate; a magnetic force generating means arranged to face a surface of the electrostatic chuck opposite to a substrate attracting surface thereof, the magnetic force generating means generating a magnetic force that attracts a mask toward the substrate attracted to the electrostatic chuck; A temperature control means; Equipped with The electrostatic chuck, the magnetic force generating means, and the temperature control means are arranged in this order in a direction intersecting the attracting surface. Effect of the Invention

[0008] According to the present invention, it is possible to perform temperature control with high accuracy in a film forming apparatus. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic plan view showing a configuration of a film forming apparatus; [Diagram 2] Cross-sectional view showing the internal configuration of the film forming chamber [Diagram 3] A schematic diagram showing an example of a manufacturing line for organic EL display devices. [Figure 4] FIG. 1 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a first embodiment of the present invention. [Diagram 5]A schematic diagram showing an example of temperature control in an organic EL production line [Figure 6] FIG. 5 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a second embodiment of the present invention. [Figure 7] FIG. 2 is a schematic plan view showing the arrangement and control configuration of a plurality of temperature control members; [Figure 8] FIG. 11 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a third embodiment of the present invention. [Figure 9] FIG. 11 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a fourth embodiment of the present invention. [Figure 10] FIG. 13 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a fifth embodiment of the present invention. [Figure 11] FIG. 13 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a sixth embodiment of the present invention. [Figure 12] A diagram explaining a method for manufacturing an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The following describes in detail the embodiments of the present invention. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, processing flow, manufacturing conditions, dimensions, materials, shapes, relative positions, and the like of the device in the following description are not intended to limit the scope of the present invention to these alone, unless otherwise specified.

[0011] The present invention is suitable for a film forming apparatus that forms a thin film of a film forming material on a surface of a film forming object such as a substrate by deposition or sputtering. The present invention can be understood as a temperature adjustment mechanism, a substrate holding device, a film forming apparatus, and a temperature adjustment method or control method using these devices. The present invention can also be understood as an electronic device manufacturing apparatus and a control method thereof, and an electronic device manufacturing method. The present invention can also be understood as a program for causing a computer to execute the temperature adjustment method or control method, or a storage medium storing the program. The storage medium may be a non-transitory storage medium readable by a computer.

[0012] In the present invention, any material can be used for the substrate, such as glass, resin, metal, silicon, etc. Any material can be used for the film formation, such as organic materials and inorganic materials (metals, metal oxides). In the following description, the term "substrate" includes substrate materials on whose surfaces one or more films have already been formed. The technology of the present invention is typically applied to manufacturing equipment for electronic devices and optical components. In particular, it is suitable for organic electronic devices, such as organic EL displays equipped with organic EL elements and organic EL display devices using the same. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0013] <Embodiment> (Device configuration) 1 is a plan view showing a schematic configuration of a film forming apparatus 1. Here, a manufacturing line for organic EL displays will be described. When manufacturing an organic EL display, a substrate of a given size is carried into the manufacturing line, and after the organic EL and metal layers are formed, post-processing steps such as cutting the substrate are carried out.

[0014] The film forming apparatus 1 includes a transfer chamber 130 disposed in the center, and a plurality of film forming chambers 110 (110a to 110d) and a mask stock chamber 120 (120a, 120b) disposed around the transfer chamber 130. The film forming chamber 110 includes a chamber in which a film forming process is performed on a substrate 10. The mask stock chamber 120 stores masks before and after use. A transfer robot 140 installed in the transfer chamber 130 transfers the substrate S and mask M into and out of the transfer chamber 130. The transfer robot 140 may be, for example, a robot hand that holds the substrate S and mask M on an articulated arm. This is a robot equipped with

[0015] The pass chamber 150 transports the substrate S flowing from the upstream side in the substrate transport direction to the transport chamber 130. The buffer chamber 160 transports the substrate S, for which the film formation process in the transport chamber 130 has been completed, to another film formation cluster on the downstream side. When the transport robot 140 receives the substrate S from the pass chamber 150, it transports it to one of the multiple film formation chambers 110. The transport robot 140 also receives the substrate S, for which the film formation process has been completed, from the film formation chamber 110 and transports it to the buffer chamber 160.

[0016] 1 constitutes one film formation cluster, and other film formation clusters can be connected to the upstream or downstream side. A swirl chamber 170 for changing the direction of the substrate 10 is provided further upstream of the pass chamber 150 and further downstream of the buffer chamber 160. Each chamber, such as the film formation chamber 110, the mask stock chamber 120, the transfer chamber 130, the buffer chamber 160, and the swirl chamber 170, is maintained in a high vacuum state during the manufacturing process.

[0017] The film forming materials in the film forming chambers 110a to 110d of the film forming apparatus 1 may be the same or different. For example, a film forming source of a different film forming material may be arranged in each of the film forming chambers 110a to 110d, and a laminated structure may be formed while the substrate S moves in sequence through the film forming chambers 110a to 110d. Alternatively, a film forming source of the same film forming material may be arranged in the film forming chambers 110a to 110d, so that films may be formed in parallel on the substrates S. Alternatively, a first film forming material may be arranged in the film forming chambers 110a and 110c, and a second film forming material may be arranged in the film forming chambers 110b and 110d, and the first layer may be formed in the film forming chamber 110a or 110c, and then the second layer may be formed in the film forming chamber 110b or 110d.

[0018] Depending on the type of electrostatic chuck, the force of adsorption of the substrate can be increased when a conductor is attached to the substrate. In such a case, the electrostatic chuck can be effectively adsorbed when a thin film of a metal material that will become an electrode layer has already been formed in the region of the substrate where the organic EL element is to be formed (typically the center of the substrate). For example, when an electrode layer is formed on a substrate in the deposition chamber 110a, and organic layers are sequentially formed in the deposition chambers 110b to 110d, it is effective to place electrostatic chucks in the deposition chambers 110b to 110d.

[0019] (Film forming chamber) 2 is a cross-sectional view showing the internal configuration of the film formation chamber 110. In the film formation chamber 110, a series of film formation processes are performed, such as receiving the substrate S and mask M from the transfer robot 140, transferring the substrate S and mask M to the transfer robot 140, aligning the substrate S and mask M relative to each other, fixing the substrate S to the mask M, and forming a film. In the following description, an XYZ Cartesian coordinate system is used in which the vertical direction is the Z direction, and rotation around the Z axis is represented by θ.

[0020] The film formation chamber 110 has a chamber 200. The inside of the chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas during film formation. Inside the chamber 200, an electrostatic chuck C, a magnet plate MP, a temperature control member TM, a cooling plate CP, a substrate support 210, a mask table 221, an evaporation source 240 (film formation source), and the like are provided.

[0021] The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate. For example, a metal mask in which a metal foil on which a pattern is formed is supported by a frame can be used as the mask M. The mask M is placed on a mask stage 221. In the configuration of this embodiment, the substrate S is positioned and placed on the mask M, and then film formation is performed.

[0022] The substrate support 210 has a plurality of claw-shaped supports 210a for receiving the substrate S transferred into the film formation chamber. The electrostatic chuck C is a substrate holding means in the film formation chamber, and attracts and holds the substrate S supported by the substrate support 210 by electrostatic force. The hook C comes into contact with the surface of the substrate S opposite to the surface in contact with the mask M (the surface on which a film is to be formed).

[0023] The substrate support part 210 may have a pressing tool corresponding to the support tool 210a. By sandwiching the end part of the substrate S between the support tool 210a and the pressing tool, the substrate S can be held by the substrate support part 210 in addition to the electrostatic chuck C, so that the substrate S becomes more stable.

[0024] The magnet plate MP is provided to attract the mask M and bring it into close contact with and adsorb it to the film-forming surface of the substrate S. The substrate S, which has been attracted to the electrostatic chuck C and has its relative position adjusted (aligned), is placed on the upper surface of the mask M (the film-forming surface of the substrate S is joined to the mask M), and the magnet plate MP is lowered from above the electrostatic chuck C to abut against the upper surface of the electrostatic chuck C (through the highly thermally conductive sheet HT in Example 1 and the like). The magnet plate MP applies a magnetic force to the mask M with the electrostatic chuck C and substrate S sandwiched therebetween (applying a magnetic attraction force to attract it upward (toward the substrate S)), thereby bringing the mask M into close contact with the substrate S.

[0025] The film forming apparatus according to this embodiment includes a temperature control unit T as a temperature control mechanism (temperature control means) for suppressing a temperature rise of the substrate S during film formation to prevent alteration or deterioration of the organic material. The temperature control unit T is, for example, composed of a temperature control member TM, a cooling plate CP, etc., and the specific configuration will be described later.

[0026] The evaporation source 240 is a film forming means including a container such as a crucible for accommodating an evaporation material, a heater, a shutter, a driving mechanism, an evaporation rate monitor, etc. The film forming source is not limited to an evaporation source, and a sputtering device may be used.

[0027] An alignment stage 280, an electrostatic chuck lifting mechanism 291, a magnet plate lifting mechanism 292, and the like are provided at the upper outer side of the chamber 200. The alignment stage 280 is a mechanism for moving the electrostatic chuck C and the magnet plate MP in horizontal directions (XYθ directions). The electrostatic chuck lifting mechanism 291 is a mechanism for lifting and lowering the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 is a mechanism for lifting and lowering the magnet plate MP in the Z-axis direction. These make it possible to adjust the position of the electrostatic chuck C with respect to the substrate S (adjustment of the relative distance) and adjust the position of the magnet plate MP with respect to the mask M in a direction intersecting a plane along the film formation surface of the substrate S.

[0028] The alignment stage 280 is configured to be movable in the horizontal direction (XYθ direction) relative to the chamber 200 by receiving the driving force of a motor 281 for driving the alignment stage via, for example, a UVW type actuator. On the outer upper surface of the chamber 200, three linear actuators, each consisting of a guide rail (not shown) fixedly installed on the upper surface of the chamber 200 and a linear block movably installed on the guide rail, are arranged, two parallel to each other and one perpendicular to each other. The base plate 282 is supported by the three linear blocks, and the base plate 282 moves in the horizontal direction (XYθ direction) by moving the three linear blocks in a predetermined direction by the driving force of the motor 281 provided on the outer upper surface of the chamber 200. By combining the moving directions of the three linear blocks, the base plate 282 can move to any position in the horizontal direction and change its direction to any direction. This movement of the base plate 282 allows the entire alignment stage 280 to move in the horizontal direction (XYθ direction) relative to the chamber 200.

[0029] The alignment stage 280 moves the electrostatic chuck C by driving the motor 281 in accordance with a control signal transmitted from the control unit 270 described later, thereby moving the substrate S attracted and held by the electrostatic chuck C in the X direction and Y direction and rotating it in the θ direction. Note that the drive mechanism for the alignment stage 280 is not limited to the UVW type actuator described above, and other known configurations may be used.

[0030] The electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on an alignment stage 280. Therefore, when the alignment stage 280 moves in the horizontal direction (X, Y, and θ directions) with respect to the chamber 200, the electrostatic chuck C and the magnet plate MP also move relatively in the horizontal direction (X, Y, and θ directions) with respect to the chamber 200.

[0031] The electrostatic chuck lifting mechanism 291 is a mechanism for lifting and lowering the electrostatic chuck C in the Z-axis direction, and is mounted on the alignment stage base plate 282. The electrostatic chuck C in the chamber 200 is connected to the electrostatic chuck lifting mechanism 291 outside the chamber 200 via a shaft that airtightly penetrates the top plate of the chamber 200. The electrostatic chuck lifting mechanism 291 includes a motor (not shown) for driving the electrostatic chuck to lift and lower, an actuator (not shown) for driving the electrostatic chuck to lift and lower, and the like. The actuator is configured to be able to lift and lower the shaft supporting the electrostatic chuck C by receiving the driving force of the motor. Specific examples of the actuator include a linear guide and a ball screw, for example.

[0032] The magnet plate lifting mechanism 292 is a mechanism for raising and lowering the magnet plate MP in the Z-axis direction, and is mounted on the alignment stage base plate 282. The magnet plate MP inside the chamber 200 is connected to the magnet plate lifting mechanism 292 outside the chamber 200 via a shaft that airtightly penetrates the top plate of the chamber 200. The magnet plate lifting mechanism 292 includes a motor (not shown) for driving the magnet plate to lift and lower, an actuator (not shown) for driving the magnet plate to lift and lower, and the like. The actuator is configured to receive the driving force of the motor to raise and lower the shaft supporting the magnet plate MP. Specific examples of the actuator include a linear guide and a ball screw, for example.

[0033] In this manner, the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are installed on the base plate 282 of the alignment stage 280. Therefore, when the alignment stage 280 moves in the horizontal direction (XYθ direction), the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 (and therefore the electrostatic chuck C and the magnet plate MP) also move in the horizontal direction (XYθ direction). As a result, for example, the relationship between the substrate S and the electrostatic chuck C Similarly, if a positional deviation occurs between, for example, the mask M and the magnet plate MP, the relative position between them can be adjusted.

[0034] In this embodiment, the substrate support part 210 and the mask table 221 are fixed in the horizontal direction (XYθ direction) with respect to the chamber 200, but are configured to be movable up and down in the vertical direction (Z axis direction). A lifting mechanism for lifting and lowering the substrate support part 210 and the mask table 221 in the vertical direction is provided on the outer upper surface of the chamber 200 so as to be separated and independent from the alignment stage.

[0035] A lifting mechanism (not shown) for the substrate support part 210 and the mask table 221 is installed on a base plate (not shown) separate from the base plate 282, which is fixed to the outer upper surface of the chamber 200, and is separate and independent from the alignment stage 280. Therefore, even if the alignment stage 280 moves in the horizontal (XYθ) directions, the substrate support part 210 and the mask table 221 do not move in the horizontal (XYθ) directions.

[0036] In this embodiment, the position of the substrate S is adjusted (by adjusting the position of the electrostatic chuck C), but as long as the substrate S and the mask M can be aligned relative to each other, the position of the mask M may be adjusted, or both the substrate S and the mask M may be adjusted.

[0037] When the electrostatic chuck C holds the substrate S supported by the substrate support portion 210, the electrostatic chuck C first The chuck lifting mechanism 291 lowers the electrostatic chuck C so that the electrostatic chuck C abuts on or is sufficiently close to the substrate S. Then, the control unit 270 controls the power source 290 to apply a predetermined attracting voltage to the electrode embedded in the electrostatic chuck C. As a result, the substrate S is held by the electrostatic chuck C.

[0038] Subsequently, during alignment, the electrostatic chuck lifting mechanism 291 further lowers the electrostatic chuck C to bring the substrate S closer to the mask M. Then, the alignment stage 280 performs alignment.

[0039] Here, the electrostatic chuck C in this embodiment is an element constituting the substrate holding device of the present invention. The elements constituting the substrate holding device of the present invention may include a power supply 290, a control unit 270, an electrostatic chuck lifting mechanism 291, etc. Various forms of temperature adjustment units T or components of the temperature adjustment units T, which will be described later, are included in the elements constituting the substrate holding device or film forming apparatus of the present invention as temperature control means or the like in the present invention.

[0040] Next, when the film is formed, the evaporation source 240 releases the film forming material. When the film formation is completed, the magnet plate lifting mechanism 292 lifts the magnet plate MP, and the electrostatic chuck lifting mechanism 291 lifts the electrostatic chuck C, and the substrate S on which the film has been formed is delivered to the transfer robot. Then, the voltage applied to the electrostatic chuck C is set to a predetermined peeling voltage (for example, 0 V), thereby releasing the holding of the substrate S.

[0041] A camera 262 that performs optical imaging and generates image data is provided at the upper outside of the chamber 200. The camera 262 captures images through a vacuum sealing window provided in the chamber 200. In this embodiment, a plurality of cameras 262 are provided corresponding to the four corners of the substrate S. Each camera 262 is disposed so that the imaging range includes a substrate alignment mark provided at a corner of the substrate S and a mask alignment mark provided at a corner of the mask M.

[0042] During alignment, the camera 262 captures images of the substrate S and mask M and outputs image data to the control unit 270. The control unit 270 analyzes the captured image data and acquires position information of the substrate alignment mark and the mask alignment mark by a method such as pattern matching processing. Then, based on the positional deviation amount between the substrate alignment mark and the mask alignment mark, it calculates the XY direction, movement distance, and rotation angle θ for moving the substrate S. Then, it converts the calculated movement amount into the drive amount of the stepping motor, servo motor, etc. equipped in each actuator of the alignment stage 280, and generates a control signal. Note that two-stage alignment may be performed using a camera for rough alignment with a low resolution but a wide field of view and a camera for fine alignment with a narrow field of view but a high resolution.

[0043] The control unit 270 is an information processing device that communicates with each component of the film forming apparatus 1 via a control line or wireless communication (not shown), receives data from each component, and sends a signal to each component to control the operation. The control unit 270 can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or an FPGA. Note that a control unit 270 may be provided for each film forming chamber, or one control unit 270 may control multiple film forming chambers.

[0044] The power supply 290 supplies voltage to each component of the film forming apparatus 1 via conductive lines (not shown). The power supply 290 is a high-voltage power supply device capable of performing the above-mentioned operations. The power supply 290 controls the polarity and magnitude of the applied voltage in accordance with instructions from the control unit 270. The power supply 290 can be considered as a voltage supplying means. By controlling the polarity and magnitude of the voltage (chucking voltage) applied to the electrodes of the electrostatic chuck C, the chucking force for the substrate S can be controlled. The power supply 290 and the control unit 270 may be considered to collectively constitute the power supply for the film forming apparatus.

[0045] The application of the present invention is not limited to the cluster-type deposition apparatus described above, but can also be applied to an in-line deposition apparatus in which a plurality of chambers are connected in a vacuum and a substrate held by a substrate carrier is moved between the chambers to deposit a film.

[0046] (Electrostatic Chuck) Electrostatic chuck C has a structure in which an electric circuit such as a metal electrode is embedded in a plate-shaped base material made of ceramics, etc. Generally, electrostatic chucks are classified into types such as gradient force type, Coulomb force type, and Johnsen-Rahbek force type according to the principle of adhering to the substrate, and in any case, the adhering force can be increased by increasing the applied adhering voltage.

[0047] A gradient force type electrostatic chuck attracts an object by utilizing an attractive force generated toward an area with a potential gradient (gradient) generated by a potential difference between electrodes. The gradient force is generated even if the object to be attracted is an insulator, so it can hold even bare glass or a glass substrate with no conductive film formed thereon. When generating the gradient force, an attraction voltage is applied so that the potential of the first electrode is higher than the reference potential of the object to be attracted and the potential of the second electrode is lower than the reference potential. In order to increase this gradient force, it is necessary to reduce the space between the electrodes and to arrange the electrodes closely together in order to make the potential gradient as steep as possible. Therefore, two comb-tooth electrodes with a structure in which the protruding comb teeth interdigitate with each other are suitable as electrodes for use in a gradient force type electrostatic chuck.

[0048] The Coulomb force type electrostatic chuck attracts an object to be attracted by electrostatic attraction generated by applying a positive potential voltage and a negative potential voltage to two electrodes, respectively, and is effective when the object to be attracted is a conductor. Therefore, it can be effectively attracted to a substrate on which an electrode layer of a metal material has already been formed. When the object to be attracted is in a floating state not connected to ground, it is possible to attract the object by generating polarization in the object to be attracted by facing both the positive and negative electrodes. When the object to be attracted is grounded, it can be attracted by at least one of the positive and negative electrodes. The Coulomb force is generally stronger than the gradient force. Also, the larger the area of ​​the electrode facing the object to be attracted, the stronger the attraction force. Therefore, in order to increase the attraction force, it is necessary to increase the ratio of the electrode area to the area of ​​the electrostatic chuck as much as possible.

[0049] The Johnson-Rahbek force type electrostatic chuck attracts a conductive object by passing a leakage current through the positive electrode, the object, and the negative electrode in that order, and requires a dielectric with a volume resistance value in a specified range to be placed between the electrode and the object. The Johnson-Rahbek force is generally stronger than the Coulomb force. Also, in the Johnson-Rahbek force type electrostatic chuck, the larger the contact area with the object, the stronger the chucking force can be.

[0050] (Organic EL display manufacturing line) 3 shows an example of a manufacturing line for an organic EL display device. The manufacturing line shown in FIG. 3 includes five film formation clusters (film formation devices) 1 (film formation clusters 1-1 to 1-5) each having four film formation chambers 11 shown in FIG. 1, one film formation cluster 1b (film formation cluster 1-6) each having two film formation chambers 11, and one film formation cluster 1c (film formation cluster 1-7). ), which are connected in series.

[0051] Of the five film formation clusters 1-1 to 1-5, the four film formation clusters 1-1 to 1-4 located upstream in the line constitute a first organic vapor deposition unit 102 that forms a total of eight organic layers in the production line, and each film formation cluster forms two organic layers on the substrate S. Film formation cluster 1-5 located downstream in the line from the first organic vapor deposition unit 102 constitutes a metal vapor deposition unit 103 in the production line, and two metal layers are deposited on the substrate S. Film formation cluster 1b located downstream in the line constitutes a second organic vapor deposition unit 104 in the production line, and one organic layer is deposited on the substrate S.

[0052] In a manufacturing line for an organic EL display device, a substrate S is first inserted into a pretreatment section 101, where it is subjected to necessary pretreatment processes, and then conveyed to a post-treatment process via a first organic vapor deposition section 102, a metal vapor deposition section 103, and a second organic vapor deposition section 104. In the manufacturing line shown in Fig. 3, the substrate S flows to a post-treatment process, for example, via route A or route B indicated by the arrows in the figure.

[0053] The substrate S is heated in each of the deposition sections 102 to 104. That is, the substrate S is repeatedly heated as it passes through the production line. In general, to evaporate the deposition source, the deposition source is heated to about 450° C. for forming an organic film, and to about 1300° C. for forming a metal film.

[0054] Assuming that the temperature of the substrate S rises by 0.1°C in the organic deposition chamber and 0.3°C in the metal deposition chamber in the above line, since there is almost no heat dissipation in a vacuum environment, the substrate S, which is put into the pretreatment unit 101 at 23°C, is vapor-deposited 11 times and rises to 24.5°C. If the thermal expansion coefficient of a typical glass substrate is 3.8×10^-6 / m / °C, it will expand by 3.8×10^-6×24.5°C=93.1μm per meter. In addition, when moving from one organic deposition chamber to the next, it will expand by 3.8×0.1=0.38μm / m. A G8H size glass substrate, which is classified as a large size, has a long side of 2.5m, and will expand by 0.38×2.5=0.95μm even with a temperature change of 0.1°C.

[0055] If the above-mentioned size change occurs, even if the substrate S and the mask M are aligned to within ±2.0 μm, the substrate S may stretch and shift, resulting in a decrease in alignment accuracy. Furthermore, the decrease in alignment accuracy may result in a decrease in film quality, making it difficult to obtain good deposition results. Furthermore, the size change caused by the high temperature during deposition may also occur in the electrostatic chuck C, and the size change of the electrostatic chuck C may also cause a further decrease in alignment accuracy.

[0056] (Temperature control mechanism) The film forming apparatus in this embodiment includes a temperature control mechanism (temperature control means) for controlling the temperature of the electrostatic chuck C to which the substrate S is attached, as a means for controlling the temperature of the substrate S to suppress the influence of the elongation of the substrate S in the organic EL manufacturing line described above. By controlling the temperature of the electrostatic chuck C, the heat given to the substrate S by the deposition is absorbed through the electrostatic chuck C, suppressing the temperature rise of the substrate S. Furthermore, the temperature of the substrate S before being input to the next process is controlled so that the substrate S can be sent to the next process after the temperature is lowered to a suitable input temperature for the next process. Note that, although an example in which the temperature of the substrate rises is shown here, the temperature of the substrate may be lowered during the transfer process. In that case, the temperature is controlled so that the substrate S can be sent to the next process after the temperature is raised to a suitable input temperature for the next process. The temperature of the substrate is not limited to being kept constant, and may be controlled to a different target substrate temperature in each chamber. Depending on the purpose, the temperature control means may be appropriately selected from those that perform both heating and cooling, those that perform only heating, and those that perform only cooling.

[0057] As specific configuration examples of the temperature adjustment mechanism, temperature adjustment units T1 to T7 according to Examples 1 to 7 are given below. Shows.

[0058] <Example 1> FIG. 4 is a schematic cross-sectional view illustrating the configuration of the temperature adjustment mechanism according to the first embodiment of the present invention.

[0059] As shown in Fig. 4, the temperature adjustment means in the film forming apparatus of this embodiment includes a temperature adjustment unit T1. The temperature adjustment unit T1 includes a temperature adjustment member TM, a high thermal conductive sheet HT, a cooling plate CP, etc. In addition to the temperature adjustment unit T1, the elements constituting the temperature adjustment means include a temperature sensor TS1, a temperature sensor TS2 (see Fig. 2), a magnet plate MP as a first heat transfer member, an electrostatic chuck C as a second heat transfer member, etc.

[0060] (Temperature control material TM) The temperature control member TM in this embodiment is a plate-shaped temperature control member incorporating a Peltier element. The temperature control member TM is provided integrally with the magnet plate MP and moves up and down together with the magnet plate MP. Specifically, the temperature control member TM is disposed in contact with the upper surface of the base plate BP of the magnet plate MP (the surface opposite to the surface facing the electrostatic chuck C).

[0061] In this embodiment, the temperature control member TM is divided into multiple parts and arranged. That is, multiple temperature control members TM are arranged at equal intervals on the upper surface of the base plate BP of the magnet plate MP. The temperature control member TM may be formed of a single member so that the temperature control member TM contacts almost the entire upper surface of the base plate BP. That is, the configuration of the temperature control member TM is not limited to the configuration shown in FIG.

[0062] The cooling plate CP is disposed in contact with the upper surface of the temperature control member TM (the surface opposite to the surface in contact with the magnet plate MP). That is, the temperature control member TM is disposed between the magnet plate MP and the cooling plate CP in the Z-axis direction, and is configured to directly exchange heat between the magnet plate MP and the cooling plate CP.

[0063] Here, the Peltier element is a plate-shaped element in which P-type and N-type semiconductors are arranged alternately. When a direct current is passed through a Peltier element, heat is transferred between both sides of the element, causing one side to generate heat and increase in temperature, while the other side absorbs heat and decreases in temperature. Heating and cooling can be achieved by switching the direction of the current input to this Peltier element. Generally, Peltier elements have a fast response among temperature control elements, and can be switched at high speed, allowing for highly accurate temperature control.

[0064] (High thermal conductive sheet HT) The highly thermally conductive sheet HT (highly thermally conductive member) is a sheet-like member made of a material having a higher thermal conductivity than the electrostatic chuck C and the magnet plate MP. The highly thermally conductive sheet HT is arranged in contact with the upper surface 261 of the electrostatic chuck C (the surface opposite to the adsorption surface 260 that adsorbs the substrate S). When the magnet plate MP descends toward the electrostatic chuck C to attract (adsorb) the mask M to the substrate S, the magnet MG of the magnet plate MP comes into contact with the upper surface of the highly thermally conductive sheet HT (the surface opposite to the surface that contacts the electrostatic chuck C). That is, when the magnet plate MP descends (when the mask M is attracted), the highly thermally conductive sheet HT is sandwiched between the electrostatic chuck C and the magnet plate MP in the Z-axis direction. In this state, the highly thermally conductive sheet HT is configured to exchange heat between the electrostatic chuck C and the magnet plate MP.

[0065] The highly thermally conductive sheet HT, which has a higher thermal conductivity than the electrostatic chuck C, comes into contact with the electrostatic chuck C, thereby making it possible to efficiently cool the electrostatic chuck C. This cooling effect can be obtained regardless of the size of the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C, but the larger the contact area, the greater the cooling effect.

[0066] In this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is larger than the projected area in the Z-axis direction of the magnets MG of the magnet plate MP (the total contact area of ​​the magnets MG with the highly thermally conductive sheet HT). This makes it possible to improve the cooling effect compared to when the magnets MG of the magnet plate MP are in direct contact with the electrostatic chuck C.

[0067] In this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is larger than the projection area of ​​the temperature adjustment member TM in the Z-axis direction (the total contact area between the magnet MG (base plate BP) and the multiple temperature adjustment members TM). This makes it possible to improve the cooling effect compared to the case where the multiple temperature adjustment members TM are in direct contact with the electrostatic chuck C.

[0068] Furthermore, in this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is secured to be as large as possible, and the highly thermally conductive sheet HT is configured to be in even contact with the entire upper surface 261 of the electrostatic chuck C. For example, it is preferable that the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is 50% or more of the area of ​​the electrostatic chuck C projected in the Z-axis direction. This makes it possible to lower the temperature of the electrostatic chuck C uniformly over the entire surface.

[0069] (Cooling plate CP) The cooling plate CP is a plate-shaped cooling member made of stainless steel, and has a water channel WP inside, which is a cooling pipe for flowing a refrigerant. The water channel WP is configured to be able to circulate cooling water as a refrigerant between the chamber 200 and the outside, and the heat applied to the cooling plate CP can be absorbed by the cooling water and discharged to the outside. The cooling plate CP is an optional component for further enhancing the cooling effect, and may be omitted from the temperature adjustment unit T1.

[0070] (Temperature sensor TS1) The temperature sensor TS1 (first temperature detection means) is a temperature sensor that detects the temperature of the electrostatic chuck C, is incorporated in the base material 250 of the electrostatic chuck C, and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS1, for example, a thermistor, a diode, or the like can be used.

[0071] In this embodiment, the temperature of the electrostatic chuck C to which the substrate S is attached is constantly monitored by a temperature sensor TS1. The temperature of the substrate S rises when it receives thermal energy from deposition, and the thermal energy is transferred to the electrostatic chuck C. The temperature of the electrostatic chuck C at this time is detected by the temperature sensor TS1 and fed back to the cooling operation by the temperature adjustment unit T1 (particularly the temperature adjustment member TM).

[0072] (Temperature sensor TS2) The temperature sensor TS2 (second temperature detection means) is a temperature sensor that detects the temperature of the mask M, and is provided on the side wall of the chamber 200 as shown in Fig. 2, and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS2, for example, a radiation thermometer that measures the temperature of the mask M from electromagnetic waves (light) emitted from the mask M can be used.

[0073] (Temperature control unit) The control unit 270 includes a current supply unit (see FIG. 7) that supplies current to the Peltier element of the temperature adjustment member TM based on the power supplied from the power source 290. As a control unit in the temperature control means, the control unit 270 controls the temperature (heat exchange state) of the temperature adjustment member TM by controlling the current that the current supply unit supplies to the Peltier element of the temperature adjustment member TM. The control unit 270, together with the power source 290, may be considered to be included in the configuration of the temperature control means (temperature control unit) of the present invention.

[0074] The control unit 270 controls the temperature adjustment member TM based on the temperature detected by the temperature sensor TS1 and the temperature detected by the temperature sensor TS2. Specifically, for example, when a substrate S is subjected to film formation across a plurality of film formation chambers, the temperature of the electrostatic chuck C provided in the current film formation chamber (first film formation chamber) is controlled to approach the temperature of the mask M provided in the next film formation chamber (second film formation chamber). At this time, the temperature of the mask M provided in the next film formation chamber (second film formation chamber) is detected using the temperature sensor TS2 provided in the chamber 200 of the next film formation chamber.

[0075] That is, the temperature of the electrostatic chuck C (first electrostatic chuck) in the current film formation chamber (first film formation chamber) is monitored by a temperature sensor TS1 (first temperature sensor) provided in the electrostatic chuck C (first electrostatic chuck) in the current film formation chamber (first film formation chamber). At the same time, the temperature of the mask M (second mask) in the next film formation chamber (second film formation chamber) is detected by a temperature sensor TS2 (second temperature sensor) provided in the next film formation chamber (second film formation chamber). Then, the current applied to the temperature adjustment member TM (first temperature adjustment member) in the current film formation chamber (first film formation chamber) is controlled so that the temperature detected by the temperature sensor TS1 (first temperature sensor) approaches the temperature detected by the temperature sensor TS2 (second temperature sensor).

[0076] 5 is a schematic diagram showing an example of temperature control in an organic EL production line. In an organic EL production line, it may be required to match the temperature of the substrate S with the temperature in the chamber 200 in each process or the temperature of the mask M in each process. As shown in FIG. 5, the temperature of the mask M may differ in each film formation cluster 1-1 to 1-5, 1b due to differences in film formation conditions, etc. Also, as can be seen from the comparison with the temperature rise of the substrate S in the case where the temperature control of this embodiment is not performed as shown in FIG. 3, the temperature difference between the substrate S and the mask M becomes more significant, especially in the latter half of the line.

[0077] According to this embodiment, it is possible to match the temperature of the electrostatic chuck C, i.e., the temperature of the substrate S, to the temperature in each chamber 200 and the temperature of the mask M. That is, according to this embodiment, it is possible to control the temperature of the substrate S to match the temperature of the mask M of each of the film forming clusters 1-1 to 1-5 and 1b shown in FIG.

[0078] (Other heat transfer materials) The magnet plate MP is a member that comes into contact with the electrostatic chuck C, and depending on the specific embodiment of the temperature adjustment unit T, it can be considered as a heat transfer member that transfers heat between the substrate S and the temperature adjustment member TM together with the electrostatic chuck C. In other words, it can be considered to be included in the configuration of the temperature control means of the present invention.

[0079] The magnet plate MP is a magnetic force generating means composed of a base plate BP and a plurality of magnets MG. The plurality of magnets MG are attached at equal intervals to the lower surface of the base plate BP (the surface of the base plate BP facing the electrostatic chuck C). Each magnet MG is configured as a protrusion that protrudes in the Z-axis direction from the lower surface of the base plate BP toward the side where the electrostatic chuck C is disposed, and its tip surface contacts the upper surface of the highly thermally conductive sheet HT.

[0080] The magnets MG attract the mask M toward the substrate S (in the Z-axis direction) by their magnetic force, and although their arrangement is not particularly limited, for example, an arrangement corresponding to the frame shape of the mask M may be adopted. In other words, the magnets may be arranged in a biased manner rather than being evenly distributed over the entire area of ​​the upper surface 261 of the electrostatic chuck C.

[0081] The electrostatic chuck C is a member that comes into contact with the substrate S, the temperature of which is to be controlled, and from the viewpoint of controlling the temperature of the substrate S, can be regarded as a heat transfer member that transfers heat between the substrate S and the temperature control member TM. The electrostatic chuck C has a positive electrode 251 and a negative electrode 252 disposed in a base material 250 made of ceramic or the like. The positive electrode 251 and the negative electrode 252 are embedded in the positive electrode 251 and the negative electrode 252. The positive electrode 251 and the negative electrode 252 are connected to a power source 290, and a voltage of a desired magnitude is applied to them under the control of a control unit 270, generating an adsorption force corresponding to the magnitude of the voltage, thereby attracting the substrate S.

[0082] (Structural features of temperature control unit T1) The temperature adjustment unit T1 of this embodiment is configured to use a temperature adjustment member formed of a Peltier element or the like, and to control the temperature of the electrostatic chuck C while monitoring the temperature of the electrostatic chuck C and the temperature of the mask M. Also, a highly thermally conductive sheet HT is configured to be in contact with the electrostatic chuck C, and the temperature of the electrostatic chuck C is controlled via the highly thermally conductive member (by controlling the temperature of the highly thermally conductive member).

[0083] Furthermore, the temperature adjustment unit T1 is configured such that the mask M, electrostatic chuck C, magnet plate MP, and temperature control means (temperature adjustment member TM, cooling plate CP, etc.) are arranged in this order when viewed from the mask M side in the Z-axis direction (a direction intersecting the adsorption surface 260 of the electrostatic chuck C). With this configuration, even if a magnetic member is included in the temperature control means, for example, it is possible to reduce the influence of the magnetic member on the adsorption effect of the mask M by the magnet plate MP.

[0084] There are various configurations of the temperature control means (cooling means) used in the film forming apparatus. For example, a configuration in which another cooling member is arranged between the magnet plate MP and the mask M in addition to the above-mentioned temperature control means of this embodiment is also conceivable. Even in such a configuration, by adopting the configuration of the temperature adjustment unit T1 of this embodiment, at least a part of the cooling means is arranged at a position that has little effect on the adsorption of the magnet plate MP to the mask, and the same effect as above can be obtained. Naturally, it goes without saying that the effect of reducing the effect of the magnet plate MP on the adsorption of the mask is further enhanced by consolidating the temperature control configuration in the temperature adjustment unit T1 of this embodiment.

[0085] (Temperature control) The temperature control of the electrostatic chuck C using the temperature control unit T1 of this embodiment is most effective when the magnet plate MP is lowered from a position (first position) spaced apart from the electrostatic chuck C to a position (second position) in which it comes into contact with the electrostatic chuck C (through the highly thermally conductive sheet HT). In the flow of the film formation process, the magnet plate MP is typically brought into contact (lowered) with the electrostatic chuck C after the aligned substrate S is placed on the mask M, that is, when the mask M is brought into close contact with the substrate S by the magnetic force of the magnet plate MP.

[0086] In the temperature adjustment unit T1, the timing and period for controlling the temperature adjustment member TM (Peltier element) is typically when the evaporation source 240 releases the film forming material, i.e., when the substrate S is exposed to the highest temperature. Even after the film formation is completed, the temperature adjustment may be continued with the magnet plate MP in contact with the electrostatic chuck C, i.e., with the substrate S in close contact with the mask M, for example, with the shutter closed if the film formation apparatus is equipped with a shutter. Alternatively, the temperature may not be adjusted during the film formation, and the temperature adjustment may be started only after the film formation is completed, with the magnet plate MP in contact with the electrostatic chuck C.

[0087] Also, the temperature adjustment by controlling the temperature adjustment member TM (Peltier element) may be performed at a timing other than during the film formation operation. For example, a configuration may be adopted in which the magnet plate MP is brought into contact with the electrostatic chuck C to control the temperature of the electrostatic chuck C while the substrate S is being transported before or after the film formation operation. That is, the magnet plate MP may be brought into contact with the electrostatic chuck C (lowered) without adhering the mask M to the substrate S, and the temperature may be adjusted by controlling the temperature adjustment member TM (Peltier element).

[0088] Furthermore, in a configuration in which a temperature control member TM made of a Peltier element is directly attached to the electrostatic chuck C, as in the second embodiment described below, the temperature of the electrostatic chuck C may be controlled at any timing regardless of the operating status of the film forming apparatus.

[0089] Furthermore, the temperature control by the temperature adjustment unit T1 is typically to cool the substrate S. However, for example, when the temperature of the substrate S becomes lower than the temperature of the mask M in the film formation line shown in Fig. 5, the electrostatic chuck C may be heated by the operation of the Peltier element of the temperature adjustment member TM. Therefore, the temperature adjustment member TM is not limited to one using a Peltier element, and may be one using a heater constituted by an electric heating wire or the like.

[0090] As described above, one of the purposes of the temperature control by the temperature adjustment unit T1 is to adjust the temperature of the substrate S to match the temperature of the mask M to be used in the next film formation in a series of film formation lines (multiple film formation operations across multiple film formation chambers) as shown in Fig. 5. However, the purpose of the temperature control by the temperature adjustment unit T1 is not limited to the above.

[0091] For example, there may be a demand to lower or raise the temperature of the substrate S as much as possible depending on the characteristics of the film to be deposited on the substrate S. In such a case, in one film formation chamber, the temperature of the electrostatic chuck C (i.e., the substrate S) may be controlled by a temperature adjustment unit T1 based on the detected temperature of the electrostatic chuck C.

[0092] Furthermore, the cooling or heating by the Peltier element changes the temperature of the member in contact with the temperature adjustment member TM, and further changes the temperature of other members in contact with the member in a chain reaction due to thermal conduction. That is, when the temperature adjustment member TM cools the magnet plate MP, the highly thermally conductive sheet HT in contact with the magnet plate MP, the electrostatic chuck C in contact with the highly thermally conductive sheet HT, and the substrate S in contact with the electrostatic chuck C are sequentially cooled. And, naturally, the mask M in contact with the substrate S is also cooled (the temperature adjustment member TM is a temperature control means for controlling the temperature of each of the above members).

[0093] The heat sources in the film formation chamber are the vaporized film formation material and radiant heat from the evaporation source, which mainly heat the mask M and the substrate S. The temperatures of the substrate S and the mask M ultimately change depending on the amount of heating energy and the difference in the cooling capacity via the electrostatic chuck C, and a temperature gradient in which the temperature is higher on the side closer to the evaporation source may occur. However, compared to the case in which cooling by the temperature adjustment unit T1 of this embodiment is not performed, the temperature rise of the mask M as well as the substrate S is suppressed. In other words, although the temperature adjustment control by the temperature adjustment unit T1 of this embodiment is primarily intended to adjust (cool) the temperature of the substrate S, it can also be said to indirectly suppress the temperature rise of the mask M.

[0094] Therefore, for example, unlike the film formation line shown in FIG. 5, in a case where it is desired to control the temperatures of the masks M in each film formation chamber to the same temperature, it is also possible to utilize the temperature adjustment control by the temperature adjustment unit T1 of this embodiment.

[0095] <Example 2> A temperature adjustment unit T2 according to a second embodiment of the present invention will be described with reference to Fig. 6 and Fig. 7. Fig. 6 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the second embodiment of the present invention. Fig. 7 is a schematic plan view corresponding to the view taken along the line AA in Fig. 6, illustrating another example of the arrangement and control configuration of a plurality of temperature adjustment members.

[0096] Here, only the configuration of Example 2 will be described that is different from the configuration of Example 1. In the configuration of Example 2, the same components as those in the configuration of Example 1 are given the same reference numerals, and the description thereof will be omitted.

[0097] In the temperature adjustment unit T1 of Example 1, the temperature adjustment member TM is configured to adjust the temperature of the electrostatic chuck C via the magnet plate MP and the highly thermally conductive sheet HT without being in direct contact with the electrostatic chuck C. In contrast, in the temperature adjustment unit T2 of Example 2, as shown in FIG. 6, the temperature adjustment member TM is disposed so as to be in direct contact with the upper surface 261 of the electrostatic chuck C.

[0098] That is, in the temperature control unit T2 of the second embodiment, the thermal energy transmitted to the electrostatic chuck C is directly collected by the temperature control member TM made of a Peltier element to cool the electrostatic chuck C, while the thermal energy is radiated and transferred to the magnet plate MP. The thermal energy transmitted to the magnet plate MP is collected by the water passage WP provided in the cooling plate CP. This makes it possible to send the substrate S to the next process while suppressing a temperature rise.

[0099] 7, the temperature adjustment unit T2 of the second embodiment is configured to divide the upper surface 261 of the electrostatic chuck C into a plurality of regions 261-1 to 261-4, and to arrange independent temperature adjustment members TM1 to TM4 in each of the divided regions 261-1 to 261-4. The temperature adjustment members TM1 to TM4 are configured to be independently controllable. That is, a plurality of power supply circuit sections TC1 to TC4 are provided corresponding to the plurality of temperature adjustment members TM1 to TM4. Each of the power supply circuit sections TC1 to TC4 is configured with two power supplies and two switches connected in parallel, and is configured to be able to switch the heating state and cooling state of each Peltier element individually by switching the direction of the current input to the Peltier element.

[0100] Furthermore, the temperature adjustment unit T2 of the second embodiment is configured to have a plurality of temperature sensors TS1-1 to TS1-4 corresponding to the plurality of divided regions 261-1 to 261-4 and the plurality of temperature adjustment members TM1 to TM4 as temperature detection means for the electrostatic chuck C. That is, the electrostatic chuck C is divided into a plurality of regions, a temperature sensor is arranged in each region to monitor the temperature of each region, and a current is passed through the Peltier element so that each region reaches a desired temperature, thereby controlling the temperature of the electrostatic chuck C. This makes it possible to perform temperature adjustment control corresponding to the temperature difference between the divided regions 261-1 to 261-4, for example, control to reduce the temperature difference.

[0101] As an additional configuration, in order to enhance heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

[0102] In addition, the upper surface 261 of the electrostatic chuck C is divided into four divided regions 261-1 to 261-4, two vertically and two horizontally, and four temperature adjustment members TM1 to TM4, four power supply circuit units TC1 to TC4, and four temperature sensors TS1-1 to TS1-4 are provided, but the number of divisions and the manner of division are not limited to this.

[0103] <Example 3> A temperature adjustment unit T3 according to a third embodiment of the present invention will be described with reference to Fig. 8. Fig. 8 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the third embodiment of the present invention.

[0104] Here, only the configuration of the embodiment 3 will be described that is different from the configurations of the embodiments 1 and 2. In the configuration of the embodiment 3, the same components as those in the configurations of the embodiments 1 and 2 are denoted by the same reference numerals, and the description thereof will be omitted.

[0105] The temperature adjustment unit T3 of the third embodiment is configured such that a non-magnetic metal member MM, which has a higher thermal conductivity than the electrostatic chuck C and also has a higher thermal conductivity than the magnet plate MP, is attached to the base plate BP of the magnet plate MP. Instead of providing the non-magnetic metal member MM, the temperature adjustment unit T3 of the third embodiment is configured without the high thermal conductive sheet HT of the temperature adjustment unit T1 of the first embodiment. It has become.

[0106] As described above, the magnets MG included in the magnet plate MP may not be evenly arranged over the entire area of ​​the upper surface 261 of the electrostatic chuck C, but may be arranged unevenly. In addition, from the viewpoint of heat transfer, the arrangement may be such that a sufficient contact area cannot be ensured. That is, in the magnet plate MP, at least the magnets MG are members that are arranged primarily to ensure the magnetic attraction effect of the mask M. Therefore, it is preferable to arrange a member that prioritizes ensuring heat transfer, separate from the magnets MG.

[0107] From this viewpoint, the temperature adjustment unit T3 of the third embodiment has a plurality of non-magnetic metal members MM disposed in the spaces between the plurality of magnets MG on the surface of the magnet plate MP facing the electrostatic chuck C. Each non-magnetic metal member MM protrudes from the above-mentioned surface of the magnet MG toward the electrostatic chuck C beyond the magnet MG. Therefore, when the magnet plate MP descends, the tip surface of the non-magnetic metal member MM comes into contact with the upper surface 261 of the electrostatic chuck C. Although a gap is formed between the magnet MG and the upper surface 261 of the electrostatic chuck C, the height of the magnet MG is configured so that a sufficient magnetic attraction force of the mask M is ensured.

[0108] In the temperature adjustment unit T3 of Example 3, the highly thermally conductive sheet HT of the temperature adjustment unit T1 of Example 1 may be disposed on the upper surface 261 of the electrostatic chuck C, and the non-magnetic metal member MM may be connected to the electrostatic chuck C via the highly thermally conductive sheet HT.

[0109] <Example 4> A temperature adjustment unit T4 according to a fourth embodiment of the present invention will be described with reference to Fig. 9. Fig. 9 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the fourth embodiment of the present invention.

[0110] Here, the configuration of Example 4 will be described only in terms of differences from the configurations of Examples 1 to 3. In the configuration of Example 4, the same components as those in the configurations of Examples 1 to 3 are given the same reference numerals, and descriptions thereof will be omitted.

[0111] As described above, the cooling plate CP is an optional component of the temperature adjustment unit T. Therefore, unlike the first to third embodiments, the temperature adjustment unit T4 of the fourth embodiment does not include the cooling plate CP as shown in Fig. 9. When the temperature adjustment of the substrate S can be adequately achieved by the temperature adjustment capacity of the temperature adjustment member TM, there is a cost advantage in omitting the cooling plate CP.

[0112] As an additional configuration, in order to enhance heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

[0113] <Example 5> A temperature adjustment unit T5 according to a fifth embodiment of the present invention will be described with reference to Fig. 10. Fig. 10 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the fifth embodiment of the present invention.

[0114] Here, the configuration of Example 5 will be described only in terms of differences from the configurations of Examples 1 to 4. In the configuration of Example 5, the same components as those in the configurations of Examples 1 to 4 are given the same reference numerals, and descriptions thereof will be omitted.

[0115] The temperature control unit T5 of the fifth embodiment is configured to have a water channel WP, which is a cooling pipe for flowing a refrigerant, provided on the base plate BP of the magnet plate MP as a cooling means substituting the temperature control member TM using a Peltier element in the temperature control units T1 to T4 of the first to fourth embodiments. In the heater T5, cooling water is circulated through a water passage WP as a temperature control means embedded in the magnet plate MP, thereby cooling the base plate BP, and heat is exchanged with the electrostatic chuck C via the highly thermally conductive sheet HT and the magnet MG.

[0116] A water-cooled temperature control configuration offers cost benefits by eliminating the temperature control member TM (and the power supply circuit unit that controls it) in a film formation environment or film formation apparatus configuration where high responsiveness or fine adjustment is not required.

[0117] As an additional configuration, in order to enhance heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

[0118] <Example 6> A temperature adjustment unit T6 according to a sixth embodiment of the present invention will be described with reference to Fig. 11. Fig. 11 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the sixth embodiment of the present invention.

[0119] Here, the configuration of Example 6 will be described only in terms of differences from the configurations of Examples 1 to 5. In the configuration of Example 6, the same components as those in the configurations of Examples 1 to 5 are given the same reference numerals, and descriptions thereof will be omitted.

[0120] The temperature adjustment unit T6 of the sixth embodiment is configured to include a heat sink HS as a cooling means substituting the temperature adjustment member TM using a Peltier element and the cooling plate CP in the temperature adjustment units T of the other embodiments. The heat sink HS is provided on the upper surface of the base plate BP of the magnet plate MP (the surface opposite to the surface facing the electrostatic chuck C).

[0121] The heat sink HS has a plurality of protrusions on a surface opposite to the contact surface with the base plate BP, and has a heat dissipation structure (heat sink structure) in which the surface area of ​​the uneven shape on the side where the protrusions are provided is larger than the area of ​​the contact surface. In other words, the heat sink HS is configured to dissipate heat of the electrostatic chuck C transferred to the contact surface with the base plate BP from the uneven surface on the opposite side to the contact surface, thereby promoting cooling of the electrostatic chuck C.

[0122] The specific configuration of the heat dissipation shape portion of the heat sink HS is not limited to a specific one. The shape of the protrusion of the heat dissipation shape portion may be, for example, a plate-like protrusion, a columnar protrusion, or a protrusion of another shape. Furthermore, it may be a combination of multiple protrusions with different shapes.

[0123] The temperature control unit T6 of this embodiment can be suitably used in a film forming apparatus in which the heat storage due to deposition is equal to or less than the heat dissipation from the magnet plate MP. In other words, depending on the film forming conditions, the temperature control unit T6 of this embodiment can perform effective cooling with a simple configuration in which a heat sink HS is added to the magnet plate MP.

[0124] As an additional configuration, in order to enhance heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

[0125] The configurations of the above-mentioned first to sixth embodiments can be combined with each other in any way. The cooling means in each embodiment can be replaced with a heating means or a temperature control means that performs both heating and cooling. For example, an electric wire heater can be used, or a current can be applied to a Peltier element in the opposite direction to switch between heating and cooling the temperature control target.

[0126] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to this embodiment will be described. Below, the configuration of an organic EL display device will be shown as an example of the electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0127] First, the organic EL display device to be manufactured will be described. Fig. 12(a) is an overall view of an organic EL display device 700, and Fig. 12(b) shows the cross-sectional structure of one pixel.

[0128] As shown in FIG. 12(a), a plurality of pixels 702 each including a plurality of light-emitting elements are arranged in a matrix in a display region 701 of an organic EL display device 700. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display region 701. In the case of the organic EL display device according to this embodiment, the pixel 702 is configured by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit light different from each other. The pixel 702 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0129] Fig. 12(b) is a schematic partial cross-sectional view taken along the line BB in Fig. 12(a). The pixel 702 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 704, a hole transport layer 705, one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among these, the hole transport layer 705, the light-emitting layers 706R, 706G, and 706B, and the electron transport layer 707 correspond to organic layers. In this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0130] The first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common for the plurality of light-emitting elements 702R, 702G, and 702B, or may be formed for each light-emitting element. In order to prevent the first electrode 704 and the second electrode 708 from being shorted by foreign matter, an insulating layer 709 is provided between the first electrodes 704. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

[0131] 12(b), the hole transport layer 705 and the electron transport layer 707 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705 can be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

[0132] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0133] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which a first electrode 704 is formed are prepared.

[0134] An acrylic resin is formed by spin coating on the substrate 703 on which the first electrode 704 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 704 is formed, forming an insulating layer 709. This opening is where the light emitting element actually emits light. It corresponds to a light-emitting area that emits light.

[0135] The substrate 703 with the patterned insulating layer 709 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 703 is held by the adhesive member. The substrate is then carried into a first organic material deposition apparatus, and after inversion, a hole transport layer 705 is deposited as a common layer on the first electrode 704 in the display area. The hole transport layer 705 is deposited by vacuum deposition. In practice, the hole transport layer 705 is formed to be larger than the display area 701, so no high-resolution mask is required.

[0136] Next, the substrate 703 on which the hole transport layer 705 has been formed is carried into a second organic material film forming apparatus. The substrate and a mask are aligned, and the substrate is placed on the mask. A red light emitting layer 706R is formed on the portion of the substrate 703 where the red light emitting element is to be disposed.

[0137] Similar to the formation of the light-emitting layer 706R, a light-emitting layer 706G that emits green light is formed by a third organic material film formation apparatus, and further a light-emitting layer 706B that emits blue light is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 706R, 706G, and 706B is completed, an electron transport layer 707 is formed over the entire display area 701 by a fifth film formation apparatus. The electron transport layer 707 is formed as a layer common to the three light-emitting layers 706R, 706G, and 706B.

[0138] The substrate on which the electron transport layer 707 has been formed is moved in a metallic evaporation material deposition device, and a second electrode 708 is deposited.

[0139] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 710 is formed, completing the film formation process on the substrate 703. After inversion, the adhesive member is peeled off from the substrate 703, thereby separating the substrate 703 from the substrate carrier. Then, the organic EL display device 700 is completed through cutting.

[0140] If the substrate 703 on which the insulating layer 709 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 710 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0141] 1...film-forming device, S...substrate, M...mask, C...electrostatic chuck, TM...temperature control member, MP...magnet plate, CP...cooling plate

Claims

1. A film forming apparatus for forming a film on a substrate, an electrostatic chuck for adsorbing the substrate; a magnetic force generating means disposed opposite to a surface of the electrostatic chuck opposite to the attracting surface of the substrate, the magnetic force generating means generating a magnetic force that attracts a mask toward the substrate attracted to the electrostatic chuck; A temperature control means; Equipped with a film forming apparatus, characterized in that the electrostatic chuck, the magnetic force generating means, and the temperature control means are arranged in this order in a direction intersecting the attracting surface;

2. a member having a thermal conductivity higher than that of the electrostatic chuck; 2. The film deposition apparatus according to claim 1, wherein the temperature control means controls the temperature of the member via the magnetic force generating means.

3. 3. The film deposition apparatus according to claim 2, wherein the member is disposed between the electrostatic chuck and the magnetic force generating means in a direction intersecting the attracting surface.

4. 4. The film deposition apparatus according to claim 3, wherein the member is disposed in contact with the electrostatic chuck.

5. 4. The film deposition apparatus according to claim 3, wherein the member is disposed in contact with the magnetic force generating means.

6. The thermal conductivity of the member is higher than the thermal conductivity of the magnetic force generating means. Item 3. The film forming apparatus according to item 2.

7. The electrostatic chuck has a base material and an electrode embedded in the base material, 3. The film deposition apparatus according to claim 2, wherein the thermal conductivity of the member is higher than the thermal conductivity of the substrate.

8. 2. The film deposition apparatus according to claim 1, wherein the temperature control means is disposed in contact with the magnetic force generating means or is embedded in the magnetic force generating means.

9. The temperature control means a temperature control member equipped with a Peltier element; a current supply unit that supplies a current to the Peltier element; a control unit that controls the current that the current supply unit supplies to the Peltier element; Including, 9. The film forming apparatus according to claim 1, wherein the control unit switches between a state in which the electrostatic chuck is heated and a state in which the electrostatic chuck is cooled by controlling the current supply unit so as to change a direction of a current flowing through the Peltier element.

10. 9. The film forming apparatus according to claim 1, wherein the temperature control means is a cooling pipe through which a coolant flows.

11. 9. The film forming apparatus according to claim 1, wherein the temperature control means is a member having a heat dissipating shape.

12. 9. The film forming apparatus according to claim 1, wherein the temperature control means is a heater.

13. a chamber in which the electrostatic chuck, the mask, the magnetic force generating means, and the temperature control means are provided; an evaporation source provided in the chamber; 9. The film forming apparatus according to claim 1, further comprising:

14. A method for manufacturing an electronic device, comprising a step of forming a film on a substrate using the film forming apparatus described in claim 13.

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