SUBSTRATE PROCESSING APPARATUS, SUBSTRATE SUPPORT TRANSPORT METHOD, SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PROGRAM

Abstract

To provide a substrate processing apparatus, a program to be executed by the substrate processing apparatus, and a method of manufacturing a semiconductor device, configured to reduce susceptibility to the effects of heat while suppressing the following problem in which, when processing a substrate inside a process furnace, the substrate becomes a high temperature immediately after the processing, therefore, there is a need to wait for the substrate to cool down, which may lead to a decrease in throughput.SOLUTION: A substrate processing apparatus 10 includes: a process chamber 201 in which a substrate is processed; a boat 217a and a boat 217b serving as substrate supports which support the substrate; supports 43a, 43b supporting the substrate supports; a rotatable table 40 having multiple supports; and an isolator 44 serving as a heat conduction inhibitor configured to suppress heat conduction between the plurality of supports.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate support transport method, a program, and a semiconductor device manufacturing method. [Background technology]

[0002] 2. Description of the Related Art One step in the manufacturing process of a semiconductor device is to carry a substrate support for supporting a substrate into a processing furnace of a substrate processing apparatus and process the substrate (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-130673 A Summary of the Invention [Problem to be solved by the invention]

[0004] As described above, when a substrate is processed in a processing furnace, the substrate becomes hot immediately after processing, and therefore the substrate must wait until it cools down, which may result in a decrease in throughput.

[0005] The present disclosure provides a technique that can improve throughput while reducing the effects of heat. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, a processing chamber for processing a substrate; a substrate support for supporting the substrate; A support portion that supports the substrate support; A rotating table including a plurality of the support portions; a heat conduction suppressing portion that suppresses heat conduction between the plurality of support portions; The present invention provides a technique having the following features: Effect of the Invention

[0007] According to the present disclosure, it is possible to improve throughput while reducing the influence of heat. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional plan view of a substrate processing apparatus according to one embodiment of the present disclosure. [Diagram 2] FIG. 2 is a side cross-sectional view of a substrate processing apparatus according to one embodiment of the present disclosure. [Diagram 3] FIG. 3 is a diagram illustrating an example of a substrate support according to one embodiment of the present disclosure. [Figure 4] FIG. 4 is a schematic configuration diagram of a controller of a substrate processing apparatus according to one embodiment of the present disclosure, and is a block diagram showing a control system of the controller. [Diagram 5] FIG. 5 is a diagram showing a modified example of a turntable of a substrate processing apparatus according to another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] <One aspect of the present disclosure> Hereinafter, one embodiment of the present disclosure will be described mainly with reference to Figures 1 to 4. Note that all of the drawings used in the following description are schematic, and the dimensional relationships of the elements, the ratios of the elements, etc. shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationships of the elements, the ratios of the elements, etc. between multiple drawings do not necessarily match.

[0010] (1) Configuration of the substrate processing device A predetermined number of wafers 200 as substrates to be processed in the substrate processing apparatus 10 are accommodated in a pod 12 as a substrate transport container having an airtight structure, and are carried into and out of the substrate processing apparatus 10.

[0011] The substrate processing apparatus 10 has a housing 14, and a substrate loading / unloading opening 18 adjacent to a pod mounting table 16 is provided on the front wall of the housing 14. A pod opener 20 is provided at the substrate loading / unloading opening 18, and the pod opener 20 opens and closes the lid of the pod 12, and wafers 200 are loaded and unloaded through the substrate loading / unloading opening 18.

[0012] The interior of the housing 14 is defined by a transfer region 24, a load lock chamber 26 adjacent to the rear of the transfer region 24, and a processing region 28 adjacent to the upper side of the load lock chamber 26 and in which a processing furnace 202 is disposed.

[0013] That is, a load lock chamber 26 is provided at the rear inside the housing 14, and a processing furnace 202 is connected above the load lock chamber 26. A furnace opening formed at the lower end of the processing furnace 202 can be opened and closed by a furnace opening shutter 30.

[0014] A substrate transfer machine 131 is provided in the transfer region 24 between the pod mounting stage 16 and the load lock chamber 26. The substrate transfer machine 131 can hold a predetermined number of wafers 200, for example, five wafers, and load or unload them into or from a boat 217a or boat 217b serving as a substrate support through a front opening 32 of the load lock chamber 26. That is, the substrate transfer machine 131 can transfer the wafers 200 between the pod 12 on the pod mounting stage 16 and the boat 217a or boat 217b in the first region 26a described below.

[0015] The front opening 32 is opened and closed by a gate valve 33, and in the closed state, the front opening 32 is airtightly closed.

[0016] The load lock chamber 26 is mainly provided with a rotary table 40, boats 217a and 217b, and a boat elevator 115 as a transfer mechanism.

[0017] The turntable 40 is, for example, disk-shaped. A rotation shaft 41 is provided at approximately the center of the bottom surface of the turntable 40. A turntable rotation mechanism 42 that rotates the turntable 40 is connected to the rotation shaft 41. In addition, support parts 43a and 43b that support the boats 217a and 217b, respectively, are provided on the top surface of the turntable 40. That is, the two boats 217a and 217b are rotatably installed on the turntable 40.

[0018] Between the support parts 43a and 43b of the turntable 40, an isolating part 44 serving as a heat conduction suppressing part is provided substantially perpendicular to the upper surface of the turntable 40. The isolating part 44 is configured in a plate shape. The isolating part 44 has a structure having a vacuum insulation effect. Here, having a vacuum insulation effect includes cases where the isolating part 44 is a vacuum insulation material, which is an insulation material with a vacuum state inside, as well as those having an effect equivalent to that of a vacuum insulation material.

[0019] Further, the isolating section 44 is configured such that the upper end of the isolating section 44 is disposed at a position higher than the upper end surfaces of the boats 217a and 217b in a state in which the boats 217a and 217b are supported by the supporting sections 43a and 43b, respectively. The isolating section 44 is configured to suppress heat conduction between the boat 217a supported by the supporting section 43a and the boat 217b supported by the supporting section 43b, between the supporting sections 43a and 43b, and to thermally isolate the boat 217a from the boat 217b.

[0020] 3, the boat 217a and the boat 217b are configured to support a plurality of wafers 200 in a horizontal position in multiple stages. The isolation unit 44 may be configured to thermally isolate at least the regions of the boat 217a and the boat 217b on which the wafers 200 are placed.

[0021] A processing chamber 201 within the processing furnace 202 is disposed above the turntable 40 and above a second region 26b, which will be described later.

[0022] Within the load lock chamber 26 and above the turntable 40, there are a first region 26a for transferring the wafers 200 between the boat 217a or the boat 217b and the pod 12, and a second region 26b for transferring the boat 217a or the boat 217b between the processing chamber 201 and the turntable 40. The first region 26a and the second region 26b are isolated on the turntable 40 by an isolation section 44. That is, the first region 26a and the second region 26b are thermally isolated from each other by suppressing heat conduction.

[0023] The boat elevator 115 is disposed in the second region 26b. The boat elevator 115 is configured to support the support portion 43a or the support portion 43b between the process chamber 201 in the process furnace 202 and the turntable 40, thereby transporting the boat 217a or the boat 217b supported by the support portion 43a or the support portion 43b.

[0024] The supporting parts 43a and 43b are used as sealing parts for air-tightly closing the furnace opening of the processing furnace 202, respectively.

[0025] The boat 217a or 217b arranged in the second region 26b is raised and lowered by the boat elevator 115, and is loaded into the processing furnace 202 and unloaded from the processing furnace 202.

[0026] The housing 14 constituting the load lock chamber 26 is provided with an exhaust port 46 for exhausting the atmosphere in the load lock chamber 26. An exhaust pipe 48 is connected to the exhaust port 46. A vacuum pump 53 as a vacuum exhaust device is connected to the exhaust pipe 48 via a pressure sensor 51 as a pressure detector (pressure detection unit) for detecting the pressure in the housing 14 and an APC (Auto Pressure Controller) valve 52 as a pressure regulator (pressure adjustment unit). The APC valve 52 can evacuate and stop the vacuum evacuation in the load lock chamber 26 by opening and closing the valve while the vacuum pump 53 is in operation, and further, can adjust the pressure in the load lock chamber 26 by adjusting the valve opening based on pressure information detected by the pressure sensor 51 while the vacuum pump 53 is in operation. An exhaust system is mainly constituted by the exhaust pipe 48, the APC valve 52, and the pressure sensor 51. The vacuum pump 53 may be included in the exhaust system.

[0027] (2) Controller configuration Next, the configuration of the controller 121 serving as a control section (control means) will be described. 4, the controller 121 is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as, for example, a touch panel, is connected to the controller 121.

[0028] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing apparatus 10, a process recipe in which procedures and conditions of substrate processing described later are described, etc. are readably stored in the storage device 121c. The process recipe is a combination of procedures in a substrate processing step described later that are executed by the controller 121 to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively referred to as simply a program. In addition, when the word program is used in this specification, it may include only a process recipe, only a control program, or both. The RAM 121b is configured as a memory area (work area) in which programs, data, etc. read by the CPU 121a are temporarily stored.

[0029] The I / O port 121d is connected to the above-mentioned pressure sensor 51, APC valve 52, vacuum pump 53, gate valve 33, boat elevator 115, turntable rotating mechanism 42, substrate transfer machine 131, and the like.

[0030] The CPU 121a is configured to read and execute a control program from the storage device 121c, and also to read a process recipe from the storage device 121c in response to an input of an operation command from the input / output device 122. The CPU 121a is configured to control the evacuation operation of the load lock chamber 26 by the pressure sensor 51, the APC valve 52, and the vacuum pump 53, the opening and closing operation of the gate valve 33, the transport operation of the wafer 200 by the substrate transfer machine 131, the rotation operation of the turntable 40 by the turntable rotation mechanism 42, the lifting and lowering operation of the boat 217a or 217b by the boat elevator 115, and the like, in accordance with the contents of the read process recipe.

[0031] The controller 121 may be configured as a general-purpose computer, not limited to a dedicated computer. For example, the controller 121 according to the present embodiment can be configured by preparing an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card) 123 storing the above-mentioned program, and installing the program in a general-purpose computer using the external storage device 123. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 123. For example, the program may be supplied without going through the external storage device 123 by using a communication means such as the Internet or a dedicated line. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. In addition, when the term recording medium is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both.

[0032] (3) Substrate processing Next, as one step of a semiconductor manufacturing process, an overview of substrate processing by the substrate processing apparatus 10 having the above-mentioned configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by a controller 121.

[0033] The pod 12 is transferred to the pod placement table 16 .

[0034] The substrate loading / unloading port 18 and the pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafers 200 are transferred by the substrate transfer machine 131 to the boat 217a in the first area 26a.

[0035] When a predesignated number of wafers 200 are loaded into the boat 217a in the first area 26a, the boat 217a is transferred to the second area 26b by the rotation of the turntable 40. Then, the front opening 32 is closed by the gate valve 33, and the load lock chamber 26 is depressurized by evacuating it through the exhaust pipe 48.

[0036] When the load lock chamber 26 is depressurized to the same pressure as the pressure inside the processing furnace 202, the furnace port is opened by the furnace port shutter 30. Then, the boat 217a on the support portion 43a is loaded into the processing furnace 202 by the boat elevator 115.

[0037] After the loading, the wafers 200 are subjected to a predetermined process in the process chamber 201 in the process furnace 202. At this time, an empty boat 217b is placed in the first region 26a.

[0038] During processing of the wafers 200 in the boat 217a, the next pod 12 is transferred to the pod mounting table 16, and in the same manner as described above, the substrate loading / unloading port 18 and the pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafers 200 are transferred to the boat 217b in the first area 26a by the substrate transfer machine 131. Then, the front opening 32 is closed by the gate valve 33, and the load lock chamber 26 is depressurized by drawing a vacuum through the exhaust pipe 48.

[0039] After the processing, the boat 217a is pulled out onto the turntable 40 by the boat elevator 115, and the furnace port is closed by the furnace port shutter 30. At this time, the boat 217a supporting the wafers 200 after the substrate processing and the boat 217b supporting the wafers 200 before the substrate processing are supported on the turntable 40. That is, the processed wafers 200 and the unprocessed wafers 200 are placed on the turntable 40 at the same time.

[0040] Here, since the wafer 200 immediately after processing is at a high temperature, if the gap between the wafer 200 immediately after processing and the wafer 200 before processing is narrow, the surface of the wafer 200 before processing may be oxidized due to the influence of heat, or crystal grain growth may occur on the surface of the wafer 200. Furthermore, if the gap between the wafer 200 immediately after processing and the wafer 200 before processing is widened, the footprint will be large, leading to an increase in the size of the apparatus.

[0041] In this embodiment, since the isolating portion 44 is provided between the boat 217a and the boat 217b on the turntable 40, even if the gap between the wafer 200 immediately after processing and the wafer 200 before processing is narrowed, the conduction of heat between the second region 26b in which the boat 217a is arranged and the first region 26a in which the boat 217b is arranged can be suppressed. That is, the footprint can be reduced to achieve a compact device while thermally isolating the boats 217a and 217b. Therefore, the wafer 200 before processing can be less susceptible to the effect of heat from the wafer 200 immediately after processing.

[0042] Then, by the rotation of the turntable 40, the boat 217a supporting the processed wafers 200 is transferred from the second region 26b to the first region 26a, and the boat 217b supporting the unprocessed wafers 200 is transferred from the first region 26a to the second region 26b. That is, the positions of the boats 217a and 217b are swapped by rotating the turntable 40 while being supported by the respective supports 43a and 43b while suppressing the conduction of heat in each region.

[0043] Then, the boat 217 b is loaded into the processing furnace 202 by the boat elevator 115 .

[0044] After loading, the wafers 200 are subjected to a predetermined process in the process chamber 201. At this time, a boat 217a supporting the processed wafers 200 is disposed in the first region 26a, and after the wafers 200 supported by the boat 217a are cooled, the pressure inside the load lock chamber 26 is restored to atmospheric pressure and then the gate valve 33 is opened. Thereafter, the wafers 200 and the pod 12 are discharged to the outside of the housing 14 in the reverse procedure described above, and the next wafer 200 is transferred to the boat 217a in the same procedure as described above.

[0045] As described above, the load lock chamber 26 is provided with a turntable 40 supporting a plurality of boats, and while a wafer 200 supported by one boat is being processed, an unprocessed wafer 200 can be transferred to the other boat. That is, substrate processing and substrate transfer processing can be performed using a plurality of boats at the same time. This improves the substrate processing speed and the throughput. Furthermore, by thermally isolating each boat on the turntable 40, the unprocessed wafer is less susceptible to the heat effect from the boat immediately after processing. That is, it is possible to suppress the surface of the unprocessed wafer from being oxidized by the effect of heat and the occurrence of crystal grain growth on the surface.

[0046] <Other Aspects of the Disclosure> Next, a substrate processing apparatus according to another embodiment of the present disclosure will be described with reference to Fig. 5. The substrate processing apparatus in this embodiment has the same device configuration and control configuration as those shown in Figs. 1 to 4, and elements that are substantially the same as those described in Figs. 1 to 3 are given the same reference numerals and their description will be omitted. Specifically, this embodiment uses inert gas supply units 54a and 54b as the heat conduction suppressing unit of the turntable 40 in the substrate processing apparatus 10 described above.

[0047] (1) Configuration of the turntable In this embodiment, inert gas supply units 54a and 54b are provided as heat conduction suppressing units that block heat conduction between the support units 43a and 43b on the turntable 40 and between the boats 217a and 217b. The inert gas supply units 54a and 54b are provided to supply inert gas to the boats 217a and 217b on the turntable 40, respectively. The inert gas supply units 54a and 54b can also be referred to as cooling gas supply units that supply cooling gas to cool the wafers 200 and the boats 217a and 217b.

[0048] The inert gas supply units 54a and 54b are installed on the turntable 40, and the inert gas supply units 54a and 54b are configured to rotate together with the boats 217a and 217b. The inert gas supply units 54a and 54b are provided so as to face the boats 217a and 217b, respectively. The inert gas supply units 54a and 54b are arranged point-symmetrically with respect to the rotation axis 41 of the turntable 40. The inert gas supply units 54a and 54b are formed with a plurality of holes in the vertical direction at height positions corresponding to the wafers 200 supported by the boats 217a and 217b, respectively, and are configured so that the inert gas is supplied to each of the wafers 200 from the plurality of holes. That is, by supplying the inert gas from the inert gas supply units 54a and 54b to the boats 217a and 217b, respectively, the boats 217a and 217b can be thermally isolated from each other.

[0049] (2) Substrate processing Next, an outline of substrate processing by the substrate processing apparatus 10 using the turntable 40 in another embodiment of the above-described configuration will be described as one step of a semiconductor manufacturing process.

[0050] The pod 12 is transferred to the pod placement table 16 .

[0051] The substrate loading / unloading port 18 and the pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafers 200 are transferred by the substrate transfer machine 131 to the boat 217a in the first area 26a.

[0052] When a predetermined number of wafers 200 are loaded into the boat 217a in the first area 26a, the boat 217a is transferred to the second area 26b by the rotation of the turntable 40. At this time, the supply of inert gas from the inert gas supply units 54a and 54b is stopped.

[0053] When the load lock chamber 26 is depressurized to the same pressure as the pressure inside the processing furnace 202, the furnace port is opened by the furnace port shutter 30. Then, the boat 217a is loaded into the processing furnace 202 by the boat elevator 115.

[0054] After loading, the wafers 200 are subjected to a predetermined process in the process furnace 202. At this time, an empty boat 217b is placed in the first region 26a.

[0055] During processing of the wafers 200 in the boat 217a, the next pod 12 is transferred to the pod mounting table 16, and in the same manner as described above, the substrate loading / unloading port 18 and the pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafers 200 are transferred to the boat 217b in the first area 26a by the substrate transfer machine 131. Then, the front opening 32 is closed by the gate valve 33, and the load lock chamber 26 is depressurized by drawing a vacuum through the exhaust pipe 48.

[0056] After the processing, the boat 217a is pulled out onto the turntable 40 by the boat elevator 115, and the furnace port is closed by the furnace port shutter 30. At this time, the boat 217a supporting the processed wafers 200 and the boat 217b supporting the unprocessed wafers 200 are arranged on the turntable 40. At this time, inert gas is supplied from the inert gas supply units 54a and 54b to the boats 217a and 217b, respectively. The inert gas supplied to the boats 217a and 217b is exhausted to the outside of the substrate processing apparatus 10 via the exhaust pipe 48.

[0057] At this time, since the inert gas is supplied to each of the boats 217a and 217b on the turntable 40, heat conduction is suppressed between the second region 26b in which the boat 217a supporting the processed wafers 200 is disposed and the first region 26a in which the boat 217b supporting the unprocessed wafers 200 is disposed. That is, the supply of the inert gas from the inert gas supply units 54a and 54b can thermally isolate the boats 217a and 217b.

[0058] Then, the boat 217a supporting the processed wafer 200 is transferred from the second region 26b to the first region 26a by the rotation of the turntable 40, and the boat 217b supporting the unprocessed wafer 200 is transferred from the first region 26a to the second region 26b. At this time, the supply amount of the inert gas supplied from the inert gas supply units 54a and 54b to the boats 217a and 217b is set to be greater when the boat 217a supporting the wafer 200 immediately after processing is transferred from the second region 26b to the first region 26a than when the boat 217b supporting the unprocessed wafer 200 is transferred from the first region 26a to the second region 26b. That is, the supply amount of the inert gas supplied from the inert gas supply unit 54a is set to be greater than the supply amount of the inert gas supplied from the inert gas supply unit 54b. This makes it possible to shorten the cooling time of the high-temperature boat immediately after processing, and to improve the substrate processing speed. In addition, by preventing the wafer immediately after processing from coming into contact with the atmosphere in this manner, it is possible to suppress oxidation of the film formed by the substrate processing, and also to suppress the influence of heat on the unprocessed wafer before processing.

[0059] When the boat 217b in the second region 26b supports the unprocessed wafers 200, the inert gas supply unit 54a stops supplying the inert gas to the boat 217a supporting the wafers 200 immediately after processing in the first region 26a until the boat 217b in the second region 26b is transferred to the processing chamber 201. That is, the supply of the inert gas from the inert gas supply unit 54a is stopped until the boat 217b in the second region 26b is transferred to the processing chamber 201. This makes it possible to suppress the heat of the first region 26a from flowing into the second region 26b. That is, it is possible to make the unprocessed wafers less susceptible to the influence of heat.

[0060] That is, while suppressing heat conduction by supplying an inert gas to each region, the positions of the boats 217a, 217b are interchanged by rotating the turntable 40 while being supported by the respective supports 43a, 43b.

[0061] Then, the boat 217 b is loaded into the processing furnace 202 by the boat elevator 115 .

[0062] After loading, the wafers 200 are subjected to a predetermined process in the process chamber 201. At this time, a boat 217a supporting the processed wafers 200 is placed in the first region 26a, and after the wafers 200 are cooled, the pressure inside the load lock chamber 26 is returned to atmospheric pressure and then the gate valve 33 is opened. Thereafter, the wafers 200 and the pod 12 are discharged to the outside of the housing 14 in the reverse procedure described above, and the next wafer 200 is transferred to the boat 217a in the same procedure as described above.

[0063] In this embodiment, the same effects as those in the above embodiment can be obtained. In addition, in this embodiment, the cooling efficiency can be further improved by adjusting the supply amount of the inert gas depending on the process.

[0064] Although one embodiment of the present disclosure has been specifically described above, the present disclosure is not limited to the above embodiment, and various modifications are possible without departing from the spirit and scope of the present disclosure.

[0065] For example, in the above-mentioned embodiment, the case where an isolation unit or an inert gas supply unit is used on the turntable 40 as the heat conduction suppression unit has been described as an example, but the present disclosure is not limited thereto. That is, both the isolation unit 44 and the inert gas supply units 54a, 54b may be provided on the turntable 40. That is, the boats 217a, 217b may be isolated by the isolation unit 44, and the inert gas supply units 54a, 54b may be provided in the respective regions where the isolated boats 217a, 217b are arranged. In this embodiment, the same effect as the above-mentioned embodiment can be obtained. In addition, in this embodiment, the cooling efficiency can be further improved by adjusting the supply amount of the inert gas depending on the process.

[0066] In the above embodiment, the case where two boats, boat 217a and boat 217b, are arranged on the rotating table 40 has been described as an example, but the present disclosure is not limited to this. That is, the present disclosure can be similarly applied even when three or more boats are arranged on the rotating table 40.

[0067] In the above-mentioned embodiment, the inert gas supply unit that supplies inert gas to each of the boats is provided, but the present disclosure is not limited to this. That is, the inert gas supply unit may be one, and it is sufficient that the heat conduction of each boat is suppressed. For example, an air curtain may be generated between the boats.

[0068] It is also preferable that the recipes used for each process are prepared individually according to the process contents and stored in the storage device 121c via an electric communication line or an external storage device 123. Then, when starting each process, it is preferable that the CPU 121a appropriately selects an appropriate recipe according to the process contents from among the multiple recipes stored in the storage device 121c. This makes it possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility using a single substrate processing device. It is also possible to reduce the burden on the operator and quickly start each process while avoiding operational errors.

[0069] The above-mentioned recipe is not limited to being newly created, but may be prepared by modifying an existing recipe that has already been installed in the substrate processing apparatus. When modifying a recipe, the modified recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe is recorded. Also, an existing recipe that has already been installed in the substrate processing apparatus may be directly modified by operating the input / output device 122 provided in the existing substrate processing apparatus.

[0070] In the above-mentioned embodiment, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been described. The present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to, for example, a case where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. In the above-mentioned embodiment, an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described. The present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to, for example, a case where a film is formed using a substrate processing apparatus having a cold-wall type processing furnace.

[0071] When using these substrate processing apparatuses, each process can be performed using the same process procedures and conditions as those in the above-mentioned and other embodiments, and the same effects as those in the above-mentioned and other embodiments can be obtained.

[0072] The above-mentioned embodiment and other embodiments may be used in appropriate combination. The processing procedures and processing conditions in this case may be the same as those in the above-mentioned embodiment and other embodiments. [Explanation of symbols]

[0073] 40 Rotating table 43 Support part 200 wafers (substrates) 201 Processing Room 217 Boat (substrate support)

Claims

1. a processing chamber for processing a substrate; a plurality of substrate supports for supporting the substrates; A plurality of supports supporting each of the substrate supports; A rotating table including a plurality of the support portions; a heat conduction suppressing portion that suppresses heat conduction between the plurality of support portions; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , wherein one of the plurality of substrate supports is configured to support a processed substrate, and the other substrate support is configured to support an unprocessed substrate.

3. The substrate processing apparatus according to claim 2 , wherein the heat conduction suppressing portion is configured to thermally isolate the processed substrate from the unprocessed substrate.

4. The substrate processing apparatus according to claim 2 , wherein the heat conduction suppressing section is configured to suppress conduction of heat from the processed substrate to the unprocessed substrate.

5. The substrate processing apparatus according to claim 2 , wherein the heat conduction suppressing portion is configured to suppress oxidation or grain growth of the surface of the unprocessed substrate.

6. 2. The substrate processing apparatus according to claim 1, further comprising a transfer mechanism for transferring one of the plurality of substrate supports between the processing chamber and the rotary table.

7. The substrate processing apparatus according to claim 1 , wherein the processing chamber is disposed above the rotation table.

8. The substrate processing apparatus according to claim 1 , wherein the heat conduction suppressing portion is an isolating portion that thermally isolates the plurality of substrate supports from one another.

9. The substrate processing apparatus according to claim 8 , wherein the isolation section is configured to thermally isolate at least an area of ​​the plurality of substrate supports on which the substrate is placed.

10. The substrate processing apparatus according to claim 8 , wherein the isolating portion is formed in a plate shape.

11. The substrate processing apparatus according to claim 8 , wherein the isolation section has a structure having a vacuum insulation effect.

12. a first region above the rotary table for transferring a substrate to one of the plurality of substrate supports, and a second region for transferring the other substrate support between the processing chamber and the rotary table; The substrate processing apparatus according to claim 1 , wherein the processing chamber is configured to be disposed above the second region.

13. The substrate processing apparatus according to claim 1 , wherein the heat conduction suppressing unit is an inert gas supplying unit that supplies an inert gas to each of the substrate support members.

14. The substrate processing apparatus of claim 13 , wherein the inert gas supply unit is mounted on the turntable and configured to rotate together with the plurality of substrate support members.

15. a first region above the rotary table for transferring a substrate to one of the plurality of substrate supports; and a second region between the processing chamber and the rotary table for transferring the other substrate support. having 14. The substrate processing apparatus of claim 13, wherein the supply amount of inert gas supplied from the inert gas supply unit to each of the plurality of substrate supports is configured so that the supply amount of inert gas when one of the plurality of substrate supports is transferred from the first region to the second region is greater than the supply amount of inert gas when the other substrate support is transferred from the second region to the first region.

16. The substrate processing apparatus of claim 15 , wherein the substrate support that is transferred from the second region to the first region is configured to support a processed substrate.

17. a first region above the rotation table for transferring a substrate to one of the plurality of substrate supports, and a second region for transferring the other substrate support between the processing chamber and the rotation table; 14. The substrate processing apparatus of claim 13, wherein the inert gas supply unit is configured such that, when a substrate support in the second region among the plurality of substrate supporters supports a substrate before processing, the supply of inert gas to the substrate support in the first region can be stopped until the substrate support in the second region is transferred to the processing chamber.

18. providing a substrate; rotating the turntable while supporting portions of the turntable support the substrate supports while suppressing heat conduction between the substrate supports; A method for transporting a substrate support comprising the steps of:

19. Loading a substrate into a processing chamber; processing a substrate in the processing chamber; removing the substrate from the processing chamber; rotating the turntable while a support portion of the turntable supports the substrate supports while suppressing heat conduction between the substrate supports; A substrate processing method comprising the steps of:

20. Loading a substrate into a processing chamber; processing a substrate in the processing chamber; removing the substrate from the processing chamber; rotating the turntable while a support portion of the turntable supports the substrate supports while suppressing heat conduction between the substrate supports; A method for manufacturing a semiconductor device having the above structure.

21. The steps to prepare the board; and a procedure for rotating the turntable while the support parts of the turntable support the substrate supports, while suppressing heat conduction between a plurality of substrate supports that support substrates.

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