Radiation detector, radiation detection system, and radiation ct device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-03-07
- Publication Date
- 2026-03-12
AI Technical Summary
As the number of pixels in a radiation sensor increases, the number of input/output terminals of the interposer connecting the radiation sensor and ASIC also increases, leading to a larger ASIC chip size and overall radiation detector size.
A radiation detector design with a radiation sensor and interposer configuration where the number of terminals on the interposer facing the integrated circuit is reduced, using a one-to-multiple connection scheme to minimize the number of wiring patterns and prevent an increase in interposer thickness and ASIC chip size.
This configuration effectively suppresses the increase in size of the radiation detector, maintaining compactness while ensuring efficient signal processing and radiation detection.
Smart Images
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Abstract
Description
[Technical field]
[0001] The present invention relates to a radiation detector, a radiation detection system, and a radiation CT apparatus. [Background technology]
[0002] It is known that a semiconductor substrate that converts incident radiation into an electric charge is used in a radiation detector. Patent Document 1 shows that a radiation sensor made of a semiconductor such as cadmium zinc telluride is connected to an application specific integrated circuit (ASIC) via an interposer. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] US Patent No. 11067707 Summary of the Invention [Problem to be solved by the invention]
[0004] As the number of pixels (electrodes) in a radiation sensor increases, the number of input / output terminals on the interposer that connects the radiation sensor to the ASIC also increases. When the number of terminals on the interposer increases, the area in which the terminals are arranged increases, leading to an increase in the chip size of the ASIC. As a result, the radiation detector becomes larger.
[0005] An object of the present invention is to provide a technique that is advantageous in preventing an increase in the size of a radiation detector. [Means for solving the problem]
[0006] In view of the above problems, a radiation detector according to an embodiment of the present invention is a radiation detector including a radiation sensor having a plurality of pixels arranged on a semiconductor substrate that converts incident radiation into electric charges, an integrated circuit that processes a signal output from the radiation sensor, and an interposer that electrically connects the radiation sensor and the integrated circuit, wherein the interposer includes a plurality of first terminals arranged on a first surface of the interposer facing the radiation sensor and electrically connected to electrodes provided on each of the plurality of pixels, and a plurality of second terminals arranged on a second surface of the interposer facing the integrated circuit and connected to the integrated circuit, each of the plurality of first terminals being connected to a second terminal of any of the plurality of second terminals, and the number of the plurality of second terminals being less than the number of the plurality of first terminals. Effect of the Invention
[0007] According to the present invention, it is possible to provide a technique that is advantageous in preventing an increase in size of a radiation detector. [Brief description of the drawings]
[0008] [Figure 1] FIG. 2 is a diagram showing an example of the configuration of a radiation detector according to the present embodiment. [Diagram 2] 2 is a diagram showing a configuration example of an interposer of the radiation detector of FIG. 1; [Diagram 3] 2 is a diagram showing a configuration example of an interposer of the radiation detector of FIG. 1; [Figure 4] FIG. 2 is a diagram showing an example of the configuration of a radiation detection system using the radiation detector shown in FIG. 1. [Diagram 5] 5 is a diagram showing an example of the configuration of a selection circuit of the radiation detection system of FIG. 4. [Figure 6] FIG. 5 is a diagram showing a modification of the radiation detection system of FIG. [Figure 7] FIG. 5 is a diagram showing a modification of the radiation detection system of FIG. [Figure 8] FIG. 2 is a diagram showing an example of the configuration of a radiation CT apparatus using the radiation detector of FIG. 1. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.
[0010] Furthermore, radiation in the present invention may include α-rays, β-rays, γ-rays, and other beams produced by particles (including photons) emitted by radioactive decay, as well as beams having the same or greater energy, such as X-rays, particle beams, and cosmic rays.
[0011] A radiation detector according to an embodiment of the present disclosure will be described with reference to Figures 1 to 8. Figure 1 is a diagram showing an example of the configuration of a radiation detector 100 according to this embodiment. The radiation detector 100 includes a radiation sensor 110, an integrated circuit 130, and an interposer 120.
[0012] The radiation sensor 110 has a plurality of pixels arranged on a semiconductor substrate 113 that converts incident radiation into electric charges. The semiconductor substrate 113 is made of cadmium zinc telluride (CdZnTe), which is an alloy of cadmium telluride (CdTe) and zinc telluride (ZnTe). 1-x Zinc x It is made of a single crystal of a semiconductor such as Te (x is, for example, 0.5 or less). 1-x Zinc x Te semiconductors are also called CZT. Although the present embodiment will be described mainly with reference to CZT, the present invention is not limited to this form and can be applied to single crystal substrates of semiconductors capable of directly detecting radiation such as X-rays. For example, the present embodiment can be applied to single crystal substrates of cadmium telluride (CdTe), lead iodide (PbI 2 ), mercury iodide (HgI 2 ), Bismuth iodide (BiI 3The present invention can be applied to semiconductor single crystal substrates such as quartz crystals (Cu, Cl, ClBr) and thallium bromide (TlBr). A plurality of electrodes 112 are arranged on one of the two main surfaces of a semiconductor substrate 113, and an electrode 111 is arranged on the other. The position of each pixel of the radiation sensor 110 can be determined by the arrangement of the electrodes 112. The electrode 111 may be integrated as shown in FIG. 1, or may be divided into multiple electrodes. The configuration of the electrode 111 will be described later. FIG. 1 shows a cross section in which two radiation sensors 110 are arranged.
[0013] The integrated circuit 130 processes the signal output from the radiation sensor 110. The integrated circuit 130 is, for example, a semiconductor device such as an ASIC (Application Specific Integrated Circuit).
[0014] The interposer 120 electrically connects the radiation sensor 110 and the integrated circuit 130. The interposer 120 includes a plurality of terminals 121 and a plurality of terminals 122. The plurality of terminals 121 are arranged on a surface of the interposer 120 facing the radiation sensor 110, and are electrically connected to electrodes 112 provided on the plurality of pixels of the radiation sensor 110. More specifically, each of the plurality of terminals 121 is connected to each of the plurality of electrodes 112 arranged on the radiation sensor 110 via bumps 151 such as solder balls. The plurality of terminals 122 are arranged on a surface of the interposer 120 facing the integrated circuit 130, and are connected to the integrated circuit 130. More specifically, each of the plurality of terminals 122 is connected to each of the plurality of terminals 131 arranged on the integrated circuit 130 via bumps 152 such as solder balls.
[0015] As shown in FIG. 1, each of the multiple terminals 121 connected to the radiation sensor 110 is connected to one of the multiple terminals 122 connected to the integrated circuit 130. Here, the number of the multiple terminals 122 is less than the number of the multiple terminals 121. For example, as shown in FIG. 1, each of the multiple terminals 122 may be connected to two or more terminals 121 of the multiple terminals 121. However, this is not limited to this, and some of the multiple terminals 122 may be connected to two or more terminals 121, and another part of the multiple terminals 122 may be connected to one terminal 121. In other words, as described above, it is sufficient that the number of the multiple terminals 122 is less than the number of the multiple terminals 121.
[0016] Two or more of the multiple terminals 121 are short-circuited within the interposer 120. This makes it possible to suppress an increase in the wiring pattern within the interposer 120 compared to a case in which the multiple terminals 121 and the multiple terminals 122 are connected in a one-to-one relationship. Suppressing an increase in the wiring pattern within the interposer 120 leads to a suppression of the number of wiring layers within the interposer 120, and makes it possible to suppress an increase in the thickness of the interposer 120. In addition, since an increase in the number of terminals of the interposer 120 relative to the integrated circuit 130 can be suppressed, an increase in the chip size of the integrated circuit 130 can be suppressed. In other words, by suppressing an increase in the thickness of the interposer 120 and suppressing an increase in the chip size of the integrated circuit 130, an increase in the size of the radiation detector 100 can be suppressed.
[0017] Next, the operation of the radiation detector 100 in this embodiment will be described. In Fig. 2(a) and 2(b), only a part of the configuration of the radiation detector 100 is shown in order to show the wiring pattern in the interposer 120. Specifically, the shape and arrangement of the electrode 111 of the radiation sensor 110 relative to the terminal 121 of the interposer 120 (the electrode 112 and the bump 151 of the radiation sensor 110 are shown to be arranged at the same position), and the wiring pattern 123 connecting the terminal 121 and the terminal 122 are shown. In order to avoid the diagram becoming complicated, only the wiring pattern connected to the terminal 122a of the multiple terminals 122 is shown, but the wiring pattern 123 for connecting to the terminal 121 is similarly arranged for each terminal 122. The same is true in the other drawings.
[0018] As shown in Fig. 1, the semiconductor substrate 113 has a surface facing the interposer 120 and on which a plurality of electrodes 112 are arranged, and a surface opposite to the surface on which the electrodes 112 are arranged and on which a plurality of electrodes 111 are arranged. As shown in Figs. 2(a) and 2(b), the plurality of electrodes 112 can be arranged in an array so as to form rows and columns. In this case, the plurality of terminals 121 of the interposer 120 includes a plurality of terminals 121 each connected to two or more electrodes 112 arranged in the row direction among the plurality of electrodes 112. In Fig. 2(a), the row direction is the Y direction, and in Fig. 2(b), the row direction is the X direction.
[0019] Here, the multiple terminals 121 including the terminal 121a connected to the electrode 112a are connected to one terminal 122a of the multiple terminals 122 via the wiring pattern 123. In this case, in an orthogonal projection onto a surface on which the electrodes 111 of the radiation sensor 110 are arranged, each of the two or more electrodes 112 including the electrode 112a short-circuited within the interposer 120 by the wiring pattern 123 is arranged to overlap a different electrode 111 among the multiple electrodes 111.
[0020] For example, as shown in Figures 2(a) and 2(b), the multiple terminals 121 may be connected to the electrodes 112 constituting one row of the multiple electrodes 112. In this case, in an orthogonal projection onto a surface on which the electrodes 111 of the radiation sensor 110 are arranged, each of the multiple electrodes 111 may be arranged so as to overlap with the electrodes 112 constituting one column of the multiple electrodes 112. Here, the column direction in Figure 2(a) is the X direction, and the column direction in Figure 2(b) is the Y direction. In this embodiment, the direction in which the electrodes 111 extend is described as the "column" direction, but the direction in which the electrodes 111 extend may be the "row" direction, and the "column" direction and the "row" direction may be interchanged.
[0021] For example, consider the case of reading out a signal from a pixel whose position is defined by the electrode 112a shown in Figures 2(a) and 2(b) in the radiation sensor 110. In this case, the signal can be read out by applying a voltage between the electrode 111a and the electrode 112a of the multiple electrodes 111. In other words, a signal can be read out from each of the multiple pixels arranged in the radiation sensor 110 in the column direction.
[0022] In the configuration shown in FIGS. 2(a) and 2(b), the terminals 121 are arranged to correspond to the electrodes 112 arranged in the radiation sensor 110. However, this is not limited to this. The terminal 121 may be one terminal connected to two or more electrodes 112 arranged in a row direction among the multiple electrodes 112 arranged in the radiation sensor 110, as shown in FIG. 3. For example, the terminal 121 may be a strip-shaped terminal connected to the electrodes 112 constituting one row among the multiple electrodes 112. By connecting one terminal 121 to the multiple electrodes 112 arranged in the radiation sensor 110, it is possible to further reduce the wiring pattern 123 in the interposer 120, and the interposer 120 can be made thinner.
[0023] 4 is a diagram showing an example of the configuration of a radiation detection system 200 including a radiation detector 100, a radiation generating unit 140 that irradiates radiation to the radiation detector 100, and an irradiation control unit 141 that controls the radiation generating unit 140. The radiation detector 100 may further include a selection circuit 132 for selecting an electrode 111 that supplies a potential for converting incident radiation into an electric charge from among the multiple electrodes 111. The selection circuit 132 may be disposed within the integrated circuit 130, for example, as shown in FIG. 4, or may be disposed separately from the integrated circuit 130. The selection circuit 132 appropriately activates a power supply circuit 133 connected to the electrode 111, thereby selecting the electrode 111 to which the potential is supplied.
[0024] The selection circuit 132 may be, for example, a decoder-type circuit that activates an output out corresponding to an input in, as shown in Fig. 5(a).Also, for example, the selection circuit 132 may be a shift register-type circuit that starts its operation in response to a start signal str and activates the output out sequentially in accordance with a clock signal clk, as shown in Fig. 5(b).
[0025] With the above configuration, it is possible to select an electrode 111 that supplies a potential for converting incident radiation into an electric charge from among the plurality of electrodes 111. While radiation is being emitted from the radiation generating unit 140, signals may be read out from a plurality of pixels arranged in the radiation sensor 110 by sequentially scanning the plurality of electrodes 111.
[0026] Furthermore, for example, the irradiation control unit 141 of the radiation detection system 200 may control the radiation generation unit 140 so that radiation is irradiated to a position corresponding to the electrode 111 selected by the selection circuit 132 from among the multiple electrodes 111 and to which a potential is supplied. For example, the irradiation control unit 141 can control the irradiation position of radiation by controlling the operation of a collimator arranged in the radiation generation unit 140 and made of a lead plate or the like for narrowing down the irradiation range of radiation. For example, when the power supply circuit 133a of the power supply circuits 133 is selected by the selection circuit 132 and a potential is supplied to the electrode 111a, the irradiation control unit 141 may control the collimator so that the radiation generation unit 140 irradiates radiation to the position where the electrode 111a is arranged.
[0027] Fig. 6 is a diagram showing a modified example of the radiation detector 100 and the radiation detection system 200 shown in Fig. 4. In Fig. 6, in order to focus on the differences from the configuration shown in Fig. 4, the configuration associated with the selection circuit 132 for selecting an electrode 111 that supplies a potential for converting incident radiation into an electric charge from among the multiple electrodes 111 is omitted. In the configuration shown in Fig. 6, the multiple electrodes 111 arranged on the radiation sensor 110 are arranged so as to divide the surface of the radiation sensor 110 on which the electrodes 111 are arranged into two or more regions. In this case, the multiple electrodes 112 of the radiation sensor 110 connected to one terminal 122 of the interposer 120 are arranged at positions overlapping different electrodes 111 from each other.
[0028] 6, as in the configuration shown in Fig. 4, an electrode 111 that supplies a potential for converting incident radiation into an electric charge can be selected from the multiple electrodes 111. While radiation is being emitted from the radiation generating unit 140, a potential is sequentially supplied to each electrode 111, thereby reading out signals from the multiple pixels arranged in the radiation sensor 110. Furthermore, for example, the irradiation control unit 141 of the radiation detection system 200 may control the radiation generating unit 140 so that radiation is irradiated to a region corresponding to the electrode 111 selected by the selection circuit 132 from the multiple electrodes 111 and to which the potential is supplied.
[0029] FIG. 7 is a diagram showing a modified example of the radiation detector 100 and the radiation detection system 200 shown in FIGS. 4 and 6. In FIG. 7, in order to focus on the differences from the configurations shown in FIGS. 4 and 6, the configuration associated with the selection circuit 132 for selecting an electrode 111 that supplies a potential for converting incident radiation into an electric charge from among the multiple electrodes 111 is omitted. In the configuration shown in FIG. 7, the radiation detector 100 is provided with multiple radiation sensors 110, and each of the multiple terminals 122 is connected to two or more terminals 121 that are connected to different radiation sensors 110 from among the multiple terminals 121. FIG. 7 shows an example in which two radiation sensors 110a and 110b are connected to one interposer 120, but three or more radiation sensors 110 may be connected.
[0030] In the configuration shown in Fig. 7, the electrodes 111 arranged in the radiation sensors 110a and 110b are integrally structured for each radiation sensor 110. Therefore, it can be said that the selection circuit 132 selects the radiation sensor 110 to which power for converting incident radiation into electric charges is supplied from among the multiple radiation sensors 110a and 110b. While radiation is being emitted from the radiation generation unit 140, the selection circuit 132 sequentially selects the electrodes 111 to which a potential is supplied from among the electrodes 111 arranged in each of the radiation sensors 110a and 110b, thereby reading out signals from the multiple pixels arranged in the radiation sensors 110a and 110b. Also, for example, the irradiation control unit 141 of the radiation detection system 200 may control the radiation generation unit 140 so that radiation is irradiated to the radiation sensor 110 selected by the selection circuit 132 from among the multiple radiation sensors 110a and 110b and to which a potential is supplied.
[0031] 8 is a block diagram of the radiation CT device in this embodiment. The radiation detector 100 described above is applicable to the detector of the radiation CT device. The radiation CT device 30 in this embodiment includes a radiation generation unit 310, a wedge 311, a collimator 312, a radiation detection unit 320, a top plate 330, a rotating frame 340, a high-voltage generator 350, a data acquisition system (DAS) 351, a signal processing unit 352, a display unit 353, and a control unit 354.
[0032] Radiation generating unit 310 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current are supplied to the vacuum tube of radiation generating unit 310 from high voltage generator 350. X-rays are generated by irradiating thermal electrons from a cathode (filament) toward an anode (target).
[0033] Wedge 311 is a filter that adjusts the amount of radiation irradiated from radiation generating unit 310. Wedge 311 attenuates the amount of radiation so that the radiation irradiated from radiation generating unit 310 to the subject has a predetermined distribution. Collimator 312 is composed of a lead plate or the like that narrows down the irradiation range of the radiation that has passed through wedge 311. The radiation generated by radiation generating unit 310 is shaped into a cone beam via collimator 312 and irradiated to the subject on top board 330.
[0034] The radiation detection unit 320 is configured using the above-mentioned radiation detector 100. The radiation detection unit 320 detects radiation that has passed through the subject from the radiation generation unit 310, and outputs a signal corresponding to the radiation dose as the DAS 351.
[0035] The rotating frame 340 has an annular shape and is configured to be rotatable. A radiation generating unit 310 (wedge 311, collimator 312) and a radiation detecting unit 320 are arranged facing each other inside the rotating frame 340. The radiation generating unit 310 and the radiation detecting unit 320 are rotatable together with the rotating frame 340.
[0036] The high voltage generator 350 includes a boost circuit, and outputs a high voltage to the radiation generation unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs a signal from the radiation detection unit 320 to the signal processing unit 352 as digital data.
[0037] The signal processing unit 352 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is capable of performing image processing on digital data. The display unit 353 includes a flat display device, and is capable of displaying radiation images. The control unit 354 includes a CPU, a ROM, a RAM, and the like, and controls the operation of the entire radiation CT apparatus 30.
[0038] The disclosure of the present specification includes the following radiation detector, radiation detection system, and radiation CT apparatus.
[0039] (Item 1) a radiation sensor having a plurality of pixels arranged on a semiconductor substrate for converting incident radiation into electric charges; an integrated circuit for processing a signal output from the radiation sensor; an interposer electrically connecting the radiation sensor and the integrated circuit; A radiation detector comprising: the interposer includes a plurality of first terminals, which are disposed on a first surface of the interposer facing the radiation sensor and are electrically connected to electrodes provided in the plurality of pixels, and a plurality of second terminals, which are disposed on a second surface of the interposer facing the integrated circuit and are connected to the integrated circuit; each of the first terminals is connected to one of the second terminals; A radiation detector, wherein the number of the plurality of second terminals is smaller than the number of the plurality of first terminals.
[0040] (Item 2) 2. The radiation detector according to item 1, wherein each of the plurality of second terminals is connected to two or more of the plurality of first terminals.
[0041] (Item 3) 3. The radiation detector according to item 1 or 2, wherein the semiconductor substrate is a single crystal substrate of cadmium zinc telluride.
[0042] (Item 4) 3. The radiation detector according to item 1 or 2, wherein the semiconductor substrate is a single crystal substrate of cadmium telluride.
[0043] (Item 5) 3. The radiation detector according to item 1 or 2, wherein the semiconductor substrate is a single crystal substrate of any one of lead iodide, mercury iodide, bismuth iodide, and thallium bromide.
[0044] (Item 6) The electrodes included in the plurality of pixels are defined as a plurality of first electrodes, the semiconductor substrate has a third surface facing the interposer and on which the plurality of first electrodes are arranged, and a fourth surface opposite to the third surface on which a plurality of second electrodes are arranged, the plurality of first electrodes are arranged in rows and columns; the plurality of first terminals include a plurality of third terminals respectively connected to two or more first electrodes arranged in a row direction among the plurality of first electrodes; the third terminals are connected to one of the second terminals; 6. The radiation detector according to any one of items 1 to 5, wherein, in an orthogonal projection onto the fourth surface, each of the two or more first electrodes is arranged to overlap a different second electrode among the plurality of second electrodes.
[0045] (Item 7) the third terminals are connected to first electrodes constituting one row among the first electrodes; 7. The radiation detector according to item 6, characterized in that, in an orthogonal projection onto the fourth surface, each of the plurality of second electrodes is arranged to overlap a first electrode that constitutes one column of the plurality of first electrodes.
[0046] (Item 8) 7. The radiation detector according to item 6, wherein the plurality of second electrodes are arranged so as to divide the fourth surface into two or more regions.
[0047] (Item 9) The electrodes included in the plurality of pixels are defined as a plurality of first electrodes, the semiconductor substrate has a third surface facing the interposer and on which the plurality of first electrodes are arranged, and a fourth surface opposite to the third surface on which a plurality of second electrodes are arranged, the plurality of first electrodes are arranged in rows and columns; the plurality of first terminals include one third terminal connected to two or more first electrodes arranged in a row direction among the plurality of first electrodes, the third terminal is connected to one of the second terminals; 6. The radiation detector according to any one of items 1 to 5, wherein, in an orthogonal projection onto the fourth surface, each of the two or more first electrodes is arranged to overlap a different second electrode among the plurality of second electrodes.
[0048] (Item 10) the third terminal is connected to first electrodes constituting one row of the plurality of first electrodes; 10. The radiation detector according to item 9, characterized in that, in an orthogonal projection onto the fourth surface, each of the plurality of second electrodes is arranged so as to overlap a first electrode constituting one column of the plurality of first electrodes.
[0049] (Item 11) 11. The radiation detector according to any one of items 6 to 10, further comprising a selection circuit for selecting, from among the plurality of second electrodes, a second electrode to which a potential is supplied for converting incident radiation into an electric charge.
[0050] (Item 12) The radiation detector includes a plurality of the radiation sensors, The radiation detector according to any one of items 1 to 5, characterized in that each of the plurality of second terminals is connected to two or more first terminals among the plurality of first terminals that are connected to different radiation sensors.
[0051] (Item 13) 13. The radiation detector according to item 12, further comprising a selection circuit for selecting, from among the plurality of radiation sensors, a radiation sensor to which power for converting incident radiation into electric charges is to be supplied.
[0052] (Item 14) Item 12. The radiation detector according to item 11, a radiation generating unit that irradiates the radiation detector with radiation; an irradiation control unit that controls the radiation generating unit; A radiation detection system comprising: the irradiation control unit controls the radiation generating unit so that radiation is irradiated to a position corresponding to a second electrode selected by the selection circuit and supplied with a potential from among the plurality of second electrodes.
[0053] (Item 15) Item 14. The radiation detector according to item 13, a radiation generating unit that irradiates the radiation detector with radiation; an irradiation control unit that controls the radiation generating unit; A radiation detection system comprising: a radiation detection system, characterized in that the irradiation control unit controls the radiation generating unit so that radiation is irradiated to a radiation sensor that is selected by the selection circuit and is supplied with power among the plurality of radiation sensors.
[0054] (Item 16) A radiation detector according to any one of items 1 to 13, a radiation generating unit that irradiates the radiation detector with radiation; a signal processing unit that processes a signal output from the radiation detector; A radiation CT apparatus comprising:
[0055] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]
[0056] 100: radiation detector, 110: radiation sensor, 112: electrode, 113: semiconductor substrate, 120: interposer, 121, 122: terminal, 130: integrated circuit
Claims
1. a radiation sensor in which a plurality of pixels, each having a first electrode, are arranged on a semiconductor substrate that converts incident radiation into electric charges; an integrated circuit for processing a signal output from the radiation sensor; an interposer that electrically connects the radiation sensor and the integrated circuit; A radiation detector comprising: the interposer includes: a plurality of first terminals arranged on a first surface of the interposer facing the radiation sensor and electrically connected to the first electrodes of the plurality of pixels; and a plurality of second terminals arranged on a second surface of the interposer facing the integrated circuit and connected to the integrated circuit; each of the plurality of first terminals is connected to one of the plurality of second terminals; the number of the plurality of second terminals is less than the number of the plurality of first terminals; the semiconductor substrate faces the interposer and includes a third surface on which the first electrodes of the plurality of pixels are arranged, and a fourth surface opposite to the third surface on which the plurality of second electrodes are arranged, The radiation detector further comprises a selection circuit for selecting, from the plurality of second electrodes, a second electrode to which a potential for converting incident radiation into an electric charge is to be supplied.
2. A radiation detector as described in Claim 1, characterized in that the selection circuit supplies the potential to one second electrode among the plurality of second electrodes, and then supplies the potential to another second electrode among the plurality of second electrodes.
3. 2. The radiation detector according to claim 1, wherein each of the plurality of second terminals is connected to two or more of the plurality of first terminals.
4. 2. The radiation detector according to claim 1, wherein the semiconductor substrate is a single crystal substrate of cadmium zinc telluride.
5. 2. The radiation detector according to claim 1, wherein the semiconductor substrate is a single crystal substrate of cadmium telluride.
6. 2. The radiation detector according to claim 1, wherein the semiconductor substrate is a single crystal substrate made of any one of lead iodide, mercury iodide, bismuth iodide, and thallium bromide.
7. The first electrodes provided in each of the plurality of pixels are arranged to form rows and columns, the plurality of first terminals include a plurality of third terminals respectively connected to two or more first electrodes arranged in a row direction among the first electrodes included in each of the plurality of pixels; the plurality of third terminals are connected to one second terminal of the plurality of second terminals; 2. The radiation detector according to claim 1, wherein, in an orthogonal projection onto the fourth plane, each of the two or more first electrodes is arranged to overlap a different second electrode from the plurality of second electrodes.
8. The first electrodes provided in each of the plurality of pixels are arranged to form rows and columns, the plurality of first terminals include a plurality of third terminals respectively connected to two or more first electrodes arranged in a row direction among the first electrodes included in each of the plurality of pixels; the plurality of third terminals are connected to one second terminal of the plurality of second terminals; 3. The radiation detector according to claim 2, wherein, in an orthogonal projection onto the fourth plane, each of the two or more first electrodes is arranged to overlap a different second electrode from the plurality of second electrodes.
9. the plurality of third terminals are connected to first electrodes that constitute one row among the first electrodes that the plurality of pixels respectively include, 8. The radiation detector according to claim 7, wherein, in an orthogonal projection onto the fourth plane, each of the second electrodes is arranged to overlap a first electrode that constitutes one column of the first electrodes that each of the pixels has.
10. The plurality of third terminals are connected to first electrodes constituting one row of the first electrodes that the plurality of pixels respectively have; 9. The radiation detector according to claim 8, wherein, in an orthogonal projection onto the fourth plane, each of the second electrodes is arranged to overlap a first electrode that constitutes one column of the first electrodes that each of the pixels has.
11. The radiation detector according to claim 7 , wherein the plurality of second electrodes are arranged so as to divide the fourth surface into two or more regions.
12. The radiation detector includes a plurality of the radiation sensors, 2. The radiation detector according to claim 1, wherein each of the plurality of second terminals is connected to two or more of the plurality of first terminals that are connected to different radiation sensors.
13. The radiation detector according to claim 1 ; a radiation generating unit that irradiates the radiation detector with radiation; an irradiation control unit that controls the radiation generation unit; A radiation detection system comprising: the irradiation control unit controls the radiation generating unit so that radiation is irradiated to a position corresponding to a second electrode selected by the selection circuit and supplied with a potential from among the plurality of second electrodes.
14. A radiation detector according to any one of claims 1 to 12; a radiation generating unit that irradiates the radiation detector with radiation; a signal processing unit that processes a signal output from the radiation detector; A radiation CT device comprising: