Photoelectric conversion module

Abstract

To provide a photoelectric conversion module in which the entire strip cell is not lost even when a short occurs.SOLUTION: A photoelectric conversion module includes a first electrode 42, a photoelectric conversion layer 43 located on the first electrode, and a second electrode 44 located on the photoelectric conversion layer, and the photoelectric conversion layer and the second electrode are divided in the direction in which they are connected in series, and a portion of the first electrode remains undivided in the direction in which they are connected in series and is electrically connected to an adjacent strip-shaped cell.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to a photovoltaic conversion module. [Background technology]

[0002] In recent years, solar power generation has been attracting attention as a clean energy source, and the development of solar cells is progressing. As one of these, solar cells using perovskite materials in the light absorption layer are rapidly attracting attention as next-generation solar cells that can be manufactured at low cost. For example, Non-Patent Document 1 reports a solution-type solar cell using a perovskite material in the light absorption layer. In addition, Non-Patent Document 2 reports that solid-state perovskite solar cells exhibit high efficiency. As the module structure of amorphous silicon solar cells, dye-sensitized solar cells, organic thin-film solar cells, and perovskite solar cells, many shapes in which cells are connected in series have been reported. [Prior art documents] [Non-patent literature]

[0003] [Non-Patent Document 1] Journal of the American Chemical Society, 2009, 131, 6050-6051. [Non-Patent Document 2] Science, 2012, 388, 643-647. Summary of the Invention [Problem to be solved by the invention]

[0004] In the case of amorphous silicon solar cells and compound solar cells, the cells are generally arranged in a strip and connected in series. However, if even one part of a strip cell is shorted (or leaks), the entire strip cell is shorted, resulting in a large loss of characteristics. Another problem of the present disclosure is that in solar cells using a hole transport material that forms a monolayer in the hole transport layer in an inverted structure, leakage is likely to occur in the hole transport layer that formed a monolayer during long-term continuous operation, resulting in a decrease in performance.

[0005] Therefore, an object of the present disclosure is to provide a photovoltaic conversion module in which the entire strip-shaped cell is not lost even if a short-circuit occurs. [Means for solving the problem]

[0006] In order to achieve the above object, the present disclosure provides a photovoltaic conversion module having strip-shaped cells divided into a plurality of cells in a direction in which the cells are connected in series, A first electrode; a photoelectric conversion layer located on the first electrode; A second electrode located on the photoelectric conversion layer; Including, The photoelectric conversion layer and the second electrode are divided in a direction in which they are connected in series, The first electrode is characterized in that a portion thereof remains undivided in the direction in which the cells are connected in series and is electrically connected to the adjacent strip-shaped cells. Effect of the Invention

[0007] According to the present disclosure, it is possible to provide a photovoltaic conversion module in which the entire strip-shaped cell is not lost even if a short-circuit occurs. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view showing an example of a normal structure of a photovoltaic conversion module according to the present disclosure. [Diagram 2]FIG. 2 is a cross-sectional view showing an example of an inverted structure of a photovoltaic conversion module according to the present disclosure. [Diagram 3] FIG. 3 is an example of an external view of a photovoltaic conversion module according to the present disclosure. [Figure 4] FIG. 4 is an example of a cross-sectional view taken along the line AA' of the photoelectric conversion module of the present disclosure shown in FIG. [Diagram 5] FIG. 5 is an example of a cross-sectional view of the photoelectric conversion module of the present disclosure shown in FIG. 3 taken along the line BB'. [Figure 6] FIG. 6 is an example of a pattern diagram showing a first electrode of Example 1 of the present disclosure. [Figure 7] FIG. 7 is an example of a pattern diagram of a photoelectric conversion layer formed on an electrode in Example 1 of the present disclosure. [Figure 8] FIG. 8 is an example of a pattern diagram showing a second electrode formed on a photoelectric conversion layer in Example 1 of the present disclosure. [Figure 9] FIG. 9 is an example of a pattern diagram in which processing is performed across the photoelectric conversion module of FIG. [Figure 10] FIG. 10 is an example of an image diagram showing the effect of no cross-sectional processing on a short circuit location. [Figure 11] Figure 11 is an example of an image diagram showing the effect of a cross-sectional processing process on a short circuit location. [Figure 12] FIG. 12 is a 1H NMR chart of the compound prepared in the example. [Figure 13] FIG. 13 is a 1H NMR chart of another compound prepared in the examples. [Figure 14] FIG. 14 is a 1H NMR chart of yet another compound prepared in the examples. [Figure 15] FIG. 15 is a 1H NMR chart of yet another compound prepared in the examples. [Figure 16] FIG. 16 is a 1H NMR chart of yet another compound prepared in the examples. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Next, the present disclosure will be described in more detail with reference to examples. However, the present disclosure is not limited to the following description.

[0010] In the present disclosure, unless otherwise specified, "mass %" and "weight %" may be read interchangeably, and "parts by mass" and "parts by weight" may be read interchangeably.

[0011] In the present disclosure, "on" or "on the surface" may refer to a state of being in direct contact with the surface or a state of being in contact with another component or the like.

[0012] The photoelectric conversion module (hereinafter, sometimes simply referred to as "module") of the present disclosure includes, for example, a power generation section and a bypass section, and the power generation section and the bypass section include a first electrode, a photoelectric conversion layer, and a second electrode, respectively, and the first electrode, the photoelectric conversion layer, and the second electrode are stacked in this order. The photoelectric conversion module of the present disclosure may include a support. Here, between the first electrode and the photoelectric conversion layer, other components (hereinafter, sometimes simply referred to as "other components") other than the first electrode, the photoelectric conversion layer, the second electrode, and the support may be included. In addition, other components may be included between the photoelectric conversion layer and the second electrode. Examples of the other components include an electron transport layer, a hole transport layer, and the like. The photoelectric conversion module of the present disclosure may have, for example, an inverted structure as shown in FIG. 2. The inverted structure is composed of a support, a first electrode, a hole transport layer, a photoelectric conversion layer, an electron transport layer, and a second electrode, in that order from the support side where light is incident.

[0013] <About serial modules> The structure of the series module in the present disclosure is shown in Fig. 3. The series module is divided into a plurality of strip-shaped cells in the direction of series connection (Fig. 4), and is characterized in that the photoelectric conversion layer 33 and the second electrode 34 are divided, but a part of the first electrode 32 remains undivided and is electrically connected to the adjacent strip-shaped cells (Fig. 5).

[0014] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to the following examples.

[0015] [Photoelectric conversion module] In one embodiment, the photoelectric conversion module of the present disclosure may have either a normal structure (FIG. 1) in which the first electrode, the electron transport layer, the photoelectric conversion layer, the hole transport layer, and the second electrode are stacked in this order, or an inverted structure (FIG. 2) in which the first electrode, the hole transport layer, the photoelectric conversion layer, the electron transport layer, and the second electrode are stacked in this order, but the inverted structure is preferable. The photoelectric conversion module of the present disclosure may or may not include other components other than the first electrode, the hole transport layer, the photoelectric conversion layer, the electron transport layer, and the second electrode. For example, the first electrode and the electron transport layer or the hole transport layer may be directly stacked without any other components being present between them, or other components may be present between them. Similarly, the electron transport layer or the hole transport layer may be directly stacked without any other components being present between the electron transport layer or the hole transport layer and the photoelectric conversion layer, or other components may be present between them. Similarly, the photoelectric conversion layer and the hole transport layer or the electron transport layer may be directly laminated without any other components being present between them, or other components may be present between them.Similarly, the hole transport layer or the electron transport layer and the second electrode may be directly laminated without any other components being present between them, or other components may be present between them.

[0016] The configuration and each component of the photovoltaic conversion module of the present disclosure will be described in more detail below with reference to examples. However, the photovoltaic conversion module of the present disclosure is not limited to the following examples. In the following, the photovoltaic conversion module of the present disclosure will be mainly described as a solar cell.

[0017] 1 and 2 show an example of the configuration of the photoelectric conversion module of the present disclosure. For convenience of explanation, FIG. 1 and FIG. 2 are drawn in a schematic manner with appropriate omissions and exaggerations. In the photoelectric conversion module 10 having a normal structure shown in FIG. 1, a first electrode 12, an electron transport layer 13, a photoelectric conversion layer 14, a hole transport layer 15, and a second electrode 16 are stacked in this order on a support (also called a substrate, base material, etc.) 11. In the photoelectric conversion module 20 having an inverted structure shown in FIG. 2, a first electrode 22, a hole transport layer 25, a photoelectric conversion layer 24, an electron transport layer 23, and a second electrode 26 are stacked in this order on a support (also called a substrate, base material, etc.) 21.

[0018] [Supports 11, 21] The supports 11 and 21 are not particularly limited, and may be appropriately used, for example, a substrate that can be used in a photoelectric conversion module such as a general solar cell. Examples of the substrate include glass, a plastic plate including a plastic film, a plastic film, and an inorganic crystal. The thickness of the substrate is not particularly limited, and is, for example, a thickness that does not inhibit the flexibility of the photoelectric conversion module of the present disclosure. In the present disclosure, "flexible" means, for example, that the photoelectric conversion module of the present disclosure is flexible enough that no breaks or cracks occur after stress is applied to the photoelectric conversion module, and the performance of the photoelectric conversion module is not affected. When the substrate is glass, for example, the thickness of the substrate is preferably 0.5 to 1.1 mm. When the substrate is a plastic film, for example, the thickness of the substrate is preferably 50 to 125 μm. In addition, substrates having at least one film of a metal film, a semiconductor film, a conductive film, and an insulating film formed on a part or all of the surface of these substrates can also be suitably used as the supports 11 and 21. The size, thickness, etc. of the supports 11, 21 are not particularly limited, and may be the same as or equivalent to those of a typical photoelectric conversion module such as a solar cell.

[0019] [First electrodes 12, 22] The first electrodes 12 and 22 are layers that support, for example, the electron transport layer 13 and the hole transport layer 25, and have a function of extracting electrons or holes from the photoelectric conversion layers 14 and 24. The first electrode 12 is a layer that functions as an anode (negative electrode), and the first electrode 22 is a layer that functions as a cathode (positive electrode).

[0020] The first electrodes 12, 22 may be formed directly on the supports 11, 21, for example. The first electrodes 12, 22 may be transparent electrodes formed from a conductor, for example. The transparent electrodes are not particularly limited, but examples thereof include a tin-doped indium oxide (ITO) film, an impurity-doped indium oxide (In2O3) film, an impurity-doped zinc oxide (ZnO) film, a fluorine-doped tin dioxide (FTO) film, a laminated film formed by laminating two or more of these, gold, silver, copper, aluminum, tungsten, titanium, chromium, nickel, and cobalt. These may be used alone or in a mixture of two or more, and may be a single layer or a laminate. These films may function as, for example, a diffusion prevention layer. The thickness of the first electrodes 12, 22 is not particularly limited, but it is preferable to adjust the sheet resistance to, for example, 5 to 15 Ω / □ (per unit area). The method of forming the first electrodes 12, 22 is not particularly limited, but can be obtained by a known film forming method depending on the material to be formed, for example. The shape of the first electrodes 12, 22 is not particularly limited, but can be formed in a film shape or a lattice shape such as a mesh shape. The method of forming the first electrodes 12, 22 on the supports 11, 21 is not particularly limited, but can be a known method, for example, vacuum film formation such as vacuum deposition and sputtering is preferable. The first electrodes 12, 22 may be patterned, for example. The patterning method is not particularly limited, but can be, for example, a method of immersing in a laser or etching solution, a method of patterning using a mask during vacuum film formation, and the like, and any method may be used in the present disclosure. The first electrodes 12, 22 may be used in combination with metal wiring, for example, for the purpose of reducing the electrical resistance value. The material of the metal wiring (metal lead wire) is not particularly limited, but can be, for example, aluminum, copper, silver, gold, platinum, nickel, and the like. The metal lead wires can be formed on the first substrate by, for example, vapor deposition, sputtering, or pressure bonding, and then a layer of ITO or FTO is provided thereon, or the metal lead wires can be provided on the ITO or FTO for combined use.

[0021] [Electron transport layer 13, 23] The material used for the electron transport layers 13 and 23 is not particularly limited and can be appropriately selected depending on the purpose, but is preferably, for example, a semiconductor material. The semiconductor material is not particularly limited and any known material can be used, for example, an elemental semiconductor, a compound semiconductor, an organic n-type semiconductor, etc.

[0022] The elemental semiconductor is not particularly limited, but examples thereof include silicon and germanium.

[0023] The compound semiconductor is not particularly limited, but examples thereof include metal chalcogenides, specifically oxides of titanium, tin, zinc, iron, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium, niobium, tantalum, etc.; sulfides of cadmium, zinc, lead, silver, antimony, bismuth, etc.; selenides of cadmium, lead, etc.; tellurides of cadmium, etc. Other compound semiconductors include phosphides of zinc, gallium, indium, cadmium, etc., gallium arsenide, copper-indium-selenide, copper-indium-sulfide, etc.

[0024] The organic n-type semiconductor is not particularly limited, and examples thereof include perylene tetracarboxylic anhydride, a perylene tetracarboxydiimide compound, a naphthalene diimide-bithiophene copolymer, a benzobisimidazobenzophenanthroline polymer, a fullerene compound such as C60, C70, or PCBM ([6,6]-phenyl-C61-butyric acid methyl ester), a carbonyl bridge-bithiazole compound, ALq3 (tris(8-quinolinolato)aluminum), a triphenylene bipyridyl compound, a silole compound, and an oxadiazole compound.

[0025] Among the above-mentioned materials used for the electron transport layers 13 and 23, organic n-type semiconductors are particularly preferred.

[0026] The material used to form the electron transport layers 13 and 23 may be, for example, one type alone or two or more types in combination. When the material used to form the electron transport layers 13 and 23 is a semiconductor material, the crystal type of the semiconductor material is not particularly limited and can be appropriately selected depending on the purpose. For example, the crystal type may be single crystal, polycrystal, or amorphous.

[0027] The thickness of the electron transport layers 13, 23 is not particularly limited and can be appropriately selected depending on the purpose, but is preferably, for example, 5 nm to 1000 nm, and more preferably 10 nm to 700 nm.

[0028] The method for forming the electron transport layers 13 and 23 is not particularly limited and can be appropriately selected depending on the purpose. Examples of the forming method include a method for forming a thin film in a vacuum (vacuum film-forming method) and a wet film-forming method. Examples of the vacuum film-forming method include a sputtering method, a pulsed laser deposition method (PLD method), an ion beam sputtering method, an ion-assisted method, an ion plating method, a vacuum deposition method, an atomic layer deposition method (ALD method), and a chemical vapor deposition method (CVD method). Examples of the wet film-forming method include a method for forming the electron transport layers 13 and 23 by applying a solvent in which an electron transport material is dissolved, and a sol-gel method when the material used to form the electron transport layers 13 and 23 is an oxide semiconductor. The sol-gel method is a method in which a gel is produced from a solution through a chemical reaction such as hydrolysis, polymerization, and condensation, and then densification is promoted by a heat treatment. When the sol-gel method is used, the method of applying the sol solution is not particularly limited and can be appropriately selected depending on the purpose, and examples thereof include a dipping method, a spraying method, a wire bar method, a spin coating method, a roller coating method, a blade coating method, and a gravure coating method, and examples of the wet printing method include letterpress, offset, gravure, intaglio, rubber plate, and screen printing, etc. The temperature during the heat treatment after applying the sol solution is, for example, preferably 80° C. or higher, and more preferably 100° C. or higher.

[0029] In the case of an inverted structure, after forming the electron transport layer 23, an electron injection layer (hole blocking layer) may be formed between the second electrode 26. An example of a material used for the electron injection layer is BCP (bathocuproine), which may be doped with cesium. The thickness of the electron injection layer is, for example, preferably 1 nm to 100 nm, more preferably 3 nm to 20 nm.

[0030] [Hole transport layer 15, 25] The hole transport layers 15 and 25 are layers having a function of transporting charges. For example, a conductor, a semiconductor, an organic hole transport material, etc. can be used for the hole transport layers 15 and 25. The organic hole transport material can function as a hole transport material that receives holes from the perovskite layers (photoelectric conversion layers) 14 and 24 and transports the holes. The conductor and the semiconductor are inorganic hole transport materials or organic hole transport materials. Examples of the inorganic hole transport material include compound semiconductors containing monovalent copper such as CuI, CuInSe2, and CuS; and compounds containing metals other than copper such as GaP, NiO, CiO, FeO, Bi2O3, MoO3, and Cr2O. The inorganic hole transport material is preferably a semiconductor containing monovalent copper, more preferably CuI or CuSCN, from the viewpoint of more efficiently receiving only holes and obtaining higher hole mobility. Examples of the organic hole transport material include polythiophene derivatives such as poly-3-hexylthiophene (P3HT) and polyethylenedioxythiophene (PEDOT); fluorene derivatives such as 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD); carbazole derivatives such as polyvinylcarbazole; triphenylamine derivatives such as poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA); diphenylamine derivatives; polysilane derivatives; polyaniline derivatives, etc. From the viewpoint of more efficiently receiving only holes and obtaining higher hole mobility, the organic hole transport material is preferably a triphenylamine derivative, a fluorene derivative, etc., and more preferably PTAA, Spiro-OMeTAD, etc.

[0031] The hole transport layers 15 and 25 may contain, for example, a compound represented by the following chemical formula (I).

[0032] [ka]

[0033] In the above chemical formula (I), Ar 1 is a structure containing an aromatic ring, and the atoms constituting the aromatic ring may or may not contain a heteroatom, Ar 1 -L 1 -X 1 may or may not have a substituent other than -L 1 -X 1 may be one or more, and if there are more than one, each L 1 and each X 1 may be the same or different from each other, Each L 1 Ar 1 and X 1 or a covalent bond; each X 1 are groups capable of transferring charges to and from the first electrode. -L 1 -X 1 The number is not particularly limited, but may be in the range of 1 to 4, for example.

[0034] The photoelectric conversion module of the present disclosure includes, for example, In the above chemical formula (I), Said L 1 Examples of the divalent substituents include divalent alkylene groups such as 1,1-methylene and 1,2-ethylene groups, and divalent alkoxy groups such as diethoxyethane. 1 It may or may not have a substituent other than the above.

[0035] The photoelectric conversion module of the present disclosure includes, for example, In the above chemical formula (I), each X 1 may each be a phosphonic acid group (-P=O(OH)2), a carboxy group (-COOH), a sulfo group (-SO3H), a boronic acid group (-B(OH)2), a trihalogenated silyl group (-SiX3, where X is a halo group), or a trialkoxysilyl group (-Si(OR)3, where R is an alkyl group).

[0036] The photoelectric conversion module of the present disclosure may, for example, be 1 may be represented by the following chemical formula (I-1).

[0037] [ka]

[0038] In the above chemical formula (I-1), Ar 11 is an atomic group containing a cyclic structure, the cyclic structure may be an aromatic ring or a non-aromatic ring, a monocyclic ring, a condensed ring, or a spiro ring, and may or may not contain heteroatoms among the atoms constituting the ring, Ar 12 is an aromatic ring, which may or may not contain heteroatoms among the atoms constituting the ring, Ar 12 assigns one or more atoms to Ar 11 Share with Ar 11 It may be integrated with Ar 12 may be one or more, and when there are more than one, they may be the same or different. Ar 12 The number is not particularly limited, but may be in the range of 1 to 4, for example.

[0039] The photoelectric conversion module of the present disclosure may further include, for example, 11 may be represented by any of the following chemical formulas (a1) to (a10).

[0040] [ka]

[0041] The photoelectric conversion module of the present disclosure may, for example, be 12 may each be represented by the following chemical formula (b).

[0042] [ka]

[0043] In the above chemical formula (b), Carbon atom C 1 and C 2 is the Ar in the chemical formula (I-1). 11 and R 1 represents a hydrogen atom, X in the above chemical formula (I) 1 or a substituent, which may or may not contain a hydrogen atom, and at least one of the hydrogen atoms in the substituent is X in the formula (I). 1 may be substituted with Each of the above R 11 may be the same or different, each of which is a hydrogen atom or a substituent, or two adjacent R 11 may form a condensed ring together with the benzene ring to which they are attached, Each of the above R 11 may or may not further have a substituent.

[0044] In the photoelectric conversion module of the present disclosure, for example, the chemical formula (b) may be represented by any of the following chemical formulas (b1) to (b7).

[0045] [ka] In the above chemical formulas (b1) to (b7), C 1 , C 2 and R 1are the same as those in the above chemical formula (b).

[0046] In the photoelectric conversion module of the present disclosure, for example, the compound represented by the chemical formula (I) may be a compound represented by any one of the following chemical formulas A-1 to A-23.

[0047] [ka]

[0048] [ka]

[0049] [ka]

[0050] [ka]

[0051] [ka]

[0052] [ka]

[0053] In the above chemical formulas A-1 to A-23, Each of the above R 1 are each a hydrogen atom or X in the chemical formula (I) 1 or X in the formula (I) 1 which may be the same or different, Each of the above R 1 At least one of the X in the chemical formula (I) 1 or X in the formula (I) 1is a substituent further substituted with R 2 is a substituent, which may be present in one or more, or may not be present. When there are more than one, each R 2 may be the same or different from each other.

[0054] In the above chemical formulas A-1 to A-23, R 1 In the above chemical formula (I), X 1 If it is a substituent further substituted with X 1 The number of may be one or more. 1 In the above chemical formula (I), X 1 In the case where the substituent is further substituted with, for example, X in the above chemical formula (I) 1 It may be an alkyl group or an alkoxy group further substituted with .

[0055] In the above chemical formulas A-1 to A-23, the substituent R 2 The number of the substituents R 2 may be, for example, an alkyl group, an alkoxy group, or a halo group (halogen atom).

[0056] In the photoelectric conversion module of the present disclosure, for example, the compound represented by chemical formula (I) may be a compound represented by the following chemical formula 4PATAT, 1-legged-3PATAT, 1-legged-3PATAT-H, or 2-legged-3PATAT.

[0057] [ka]

[0058] [ka]

[0059] [ka]

[0060] [ka]

[0061] The hole transport layers 15 and 25 may contain, for example, a compound represented by the following chemical formula (III). Ar-LX (III)

[0062] In the above chemical formula (III), Ar represents a structure containing an aromatic ring or a hetero ring which may have a substituent; L represents a divalent substituent linking Ar and X; X is selected from the group consisting of a dihydroxyphosphoryl group (-P=O(OH)2), a carboxyl group (-COOH), a sulfo group (-SO3H), a boronic acid group (-B(OH)2), a trihalogenated silyl group (-SiX3, where X is a halogen group), a trialkoxysilyl group (-Si(OR)3, where R is an alkyl group), a trihydroxysilyl group, and a dialkylphosphoryl group.

[0063] In the chemical formula (III), Ar, L, and X can refer to the examples of Ar1, L1, and X1 in the chemical formula (I), respectively.

[0064] In the chemical formula (III), the number of -LX bonded to Ar may be one or more. In the latter case, the chemical formula (III) is, for example, Ar(-LX) n The n is, for example, a positive integer, specifically, 1 to 4.

[0065] In the photoelectric conversion module of the present disclosure, for example, the hole transport layer may further contain a co-adsorbent.

[0066] In the photoelectric conversion module of the present disclosure, for example, the co-adsorbent may be a compound represented by the following chemical formula (II).

[0067] [ka]

[0068] In the above formula (II), L 2 is an alkyl group, an alkoxy group, an aryl group, or a heterocycle; L 2 At least one hydrogen atom of X 2 is replaced by X 2 may or may not have a substituent other than X 2 is a group capable of transferring charge between the first electrode and the first electrode, and may be one or more, and when there are more than one, they may be the same or different.

[0069] The photoelectric conversion module of the present disclosure includes, for example, In the above formula (II), each X 2 may each be a phosphonic acid group (-P=O(OH)2), a carboxy group (-COOH), a sulfo group (-SO3H), a boronic acid group (-B(OH)2), a trihalogenated silyl group (-SiX3, where X is a halo group), or a trialkoxysilyl group (-Si(OR)3, where R is an alkyl group).

[0070] In the photoelectric conversion module of the present disclosure, for example, the molecular weight of the co-adsorbent may be 2,000 or less.

[0071] In the present disclosure, unless otherwise specified, a chain group or atomic group (e.g., a hydrocarbon group such as an alkyl group or an unsaturated aliphatic hydrocarbon group) may be linear or branched, and the number of carbon atoms is not particularly limited, but may be, for example, 1 to 40, 1 to 32, 1 to 24, 1 to 18, 1 to 12, 1 to 6, or 1 to 2 (2 or more in the case of an unsaturated hydrocarbon group). In addition, in the present disclosure, the number of ring members (the number of atoms constituting the ring) of a cyclic group or atomic group (e.g., an aromatic ring, an aromatic group, etc., such as an aryl group, a heteroaryl group, etc.) is not particularly limited, but may be, for example, 5 to 32, 5 to 24, 6 to 18, 6 to 12, or 6 to 10. In addition, when an isomer exists in a substituent, etc., any isomer may be used unless otherwise specified. For example, when simply referring to a "naphthyl group", it may be a 1-naphthyl group or a 2-naphthyl group.

[0072] In the present disclosure, the "substituent" is not particularly limited, but examples thereof include an alkyl group, an unsaturated aliphatic hydrocarbon group, an alkoxy group, an aralkyl group, an aryl group, a heteroaryl group, a halogen, a hydroxy group (-OH), a mercapto group (-SH), an alkylthio group (-SR, R is an alkyl group), a sulfo group, a nitro group, a diazo group, a cyano group, and a trifluoromethyl group.

[0073] In addition, in the present disclosure, when a compound has isomers such as tautomers or stereoisomers (e.g., geometric isomers, conformational isomers, and optical isomers), any of the isomers can be used in the present disclosure, unless otherwise specified. In addition, in the present disclosure, when a compound can form a salt, the salt can also be used in the present disclosure, unless otherwise specified. The salt may be an acid addition salt or a base addition salt. Furthermore, the acid that forms the acid addition salt may be an inorganic acid or an organic acid, and the base that forms the base addition salt may be an inorganic base or an organic base. The inorganic acid is not particularly limited, but examples thereof include sulfuric acid, phosphoric acid, hydrofluoric acid, hydrochloric acid, hydrobromic acid, hydroiodic acid, hypofluorite acid, hypochlorous acid, hypobromite acid, hypoiodite acid, fluorite acid, chlorous acid, bromite acid, iodite acid, fluorine acid, chlorine acid, bromine acid, iodic acid, perfluorine acid, perchloric acid, perbromine acid, and periodic acid. The organic acid is not particularly limited, but examples thereof include p-toluenesulfonic acid, methanesulfonic acid, oxalic acid, p-bromobenzenesulfonic acid, carbonic acid, succinic acid, citric acid, benzoic acid, and acetic acid. The inorganic base is not particularly limited, but examples thereof include ammonium hydroxide, alkali metal hydroxide, alkaline earth metal hydroxide, carbonate, and hydrogen carbonate, and more specifically, examples thereof include sodium hydroxide, potassium hydroxide, potassium carbonate, sodium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, calcium hydroxide, and calcium carbonate. The organic base is also not particularly limited, but examples thereof include ethanolamine, triethylamine, and tris(hydroxymethyl)aminomethane. The method for producing these salts is also not particularly limited, and for example, they can be produced by a method in which the above-mentioned acid or base is appropriately added to the compound by a known method.

[0074] Furthermore, for the purpose of further improving the hole transport properties, the organic hole transport material may further include, for example, lithium bis(trifluoromethylsulfonyl)imide (LiTFSI), silver bis(trifluoromethylsulfonyl)imide, zinc bis(trifluoromethylsulfonyl)imide, ammonium bis(trifluoromethanesulfonyl)imide, lithium bis(nonafluorobutanesulfonyl)imide, sodium bis(nonafluorobutanesulfonyl)imide, lithium nonafluoro-N-[(trifluoromethane)sulfonyl]butanesulfonylamide, potassium nonafluoro The hole transport layer 15, 25 may contain an oxidizing agent such as fluoro-N-[(trifluoromethane)sulfonyl]butanesulfonylamide, nonafluoro-N-[(trifluoromethane)sulfonyl]butanesulfonylamide, lithium N,N-hexafluoro-1,3-disulfonylimide, sodium N,N-hexafluoro-1,3-disulfonylimide, trifluoromethylsulfonyloxysilver, NOSbF6, SbCl5, SbF5, tris(2-(1H-pyrazol-1-yl)-4-tert-butylpyridine)cobalt(III)tri[bis(trifluoromethane)sulfonimide], etc. In addition, the hole transport layer 15, 25 may contain a basic compound such as tert-butylpyridine (TBP), 2-picoline, 2,6-lutidine, etc. The content of the oxidizing agent and the basic compound may be, for example, the amount that has been conventionally used. The thickness of the hole transport layer 15, 25 is preferably, for example, 1 to 500 nm, more preferably 2 to 300 nm, from the viewpoint of more efficiently receiving only holes and obtaining higher hole mobility. The method of forming the hole transport layer 15, 25 is preferably performed, for example, in a dry atmosphere. The method of forming the hole transport layer 15, 25 is preferably, for example, to apply (spin coat, etc.) a solution containing an organic hole transport material onto the perovskite layer (light absorbing layer) in a dry atmosphere, and heat it at 30 to 180°C, particularly 100 to 150°C.

[0075] In addition, the hole transport layer 25 in the inverted structure may be, for example, a hole transport compound that forms a monolayer (hereinafter, also referred to as a "monomolecular hole transport compound"). The monomolecular hole transport compound desirably has an anchor that chemically bonds to, for example, ITO, which is a transparent electrode, in the inverted structure. Examples of the anchor include a phosphonic acid group (-P=O(OH)2), a carboxy group (-COOH), a sulfo group (-SO3H), a boronic acid group (-B(OH)2), a trihalogenated silyl group (-SiX3, where X is a halogen atom), and a trialkoxysilyl group (-Si(OR)3, where R is an alkyl group). The anchor is particularly preferably a phosphonic acid group, a trihalogenated silyl group, or a trialkoxysilyl group.

[0076] The method for forming the hole transport layer 25 using the monomolecular hole transport material is not particularly limited, but for example, the monomolecular hole transport compound is adsorbed on the first electrode 22 to form a monolayer, thereby forming the hole transport layer 25. The method for adsorbing the monomolecular hole transport compound on the first electrode 22 to form a monolayer is not particularly limited, but for example, the monomolecular hole transport compound may be dissolved in a solvent and brought into contact with the first electrode 22 to be bonded. The bond between the monomolecular hole transport compound and the first electrode 22 is not particularly limited, and may be a physical bond or a chemical bond. The type of the bond is not particularly limited, and may be, for example, any of a hydrogen bond, an ester bond, a chelate bond, and the like. The solvent for dissolving the monomolecular hole transport compound is not particularly limited, and may be, for example, one of water and an organic solvent, or both. More specifically, examples of the solvent include water; alcohols such as methanol, ethanol, and 2-propanol; ethers such as diethyl ether and diisopropyl ether; ketones such as acetone and methyl isobutyl ketone; esters such as ethyl acetate, isobutyl acetate, and γ-butyrolactone; heterocycles such as tetrahydrofuran and thiophene; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone; sulfoxides such as dimethyl sulfoxide; sulfones such as diethylsulfone and sulfolane; nitriles such as acetonitrile and 3-methoxypropionitrile; aromatic compounds such as benzene, toluene, and chlorobenzene; halogen-based solvents such as dichloromethane and chloroform; and fluorine-based solvents such as chlorofluorocarbons, hydrochlorofluorocarbons, and hydrofluorocarbons. The solvents may be used alone or in combination of two or more.

[0077] The specific method for adsorbing the monomolecular hole transport compound on the first electrode 22 to form a monomolecular layer is not particularly limited, but examples thereof include known methods such as dipping, spraying, spin coating, and bar coating. The temperature during the adsorption is not particularly limited, but is preferably -20°C to 100°C, and more preferably 0°C to 50°C. The time for the adsorption is not particularly limited, but is preferably 1 second to 48 hours, and more preferably 10 seconds to 1 hour. After the adsorption process, for example, washing may or may not be performed. The method for the washing is not particularly limited, but for example, a known method may be used appropriately.

[0078] After the adsorption treatment or the washing, a heat treatment may or may not be performed. The temperature of the heat treatment is, for example, preferably 50° C. to 150° C., and more preferably 70° C. to 120° C. The time of the heat treatment is, for example, preferably 1 second to 48 hours, and more preferably 10 seconds to 1 hour. The heat treatment may be performed, for example, under air or in vacuum.

[0079] When the unimolecular hole transport compound is adsorbed on the first electrode 22, for example, a co-adsorbent may or may not be used in combination. The co-adsorbent may be added, for example, when the electrode surface cannot be completely covered by the unimolecular hole transport compound alone, or for the purpose of inhibiting the interaction between the unimolecular hole transport compounds.

[0080] The co-adsorbent is not particularly limited, but examples thereof include phosphonic acid compounds such as n-butylphosphonic acid, n-hexylphosphonic acid, n-decylphosphonic acid, n-octadecylphosphonic acid, 2-ethylhexylphosphonic acid, methoxymethylphosphonic acid, 3-acryloyloxypropylphosphonic acid, 11-hydroxyundecylphosphonic acid, 1H,1H,2H,2H-perfluorophosphonic acid, acetic acid, propionic acid, isobutyric acid, nonanoic acid, fluoroacetic acid, α-chloropropionic acid, glyoxylic acid, and chenodeoxycholic acid. The co-adsorbent may be used alone or in combination of two or more kinds.

[0081] The method of adsorbing the co-adsorbent on the first electrode 22 is not particularly limited, but it is preferable to dissolve the co-adsorbent in a solvent and then adsorb it, as in the case of the unimolecular hole transport compound. The solvent is not particularly limited, but may be, for example, the same as the solvent exemplified above for the unimolecular hole transport compound. The co-adsorbent may be adsorbed by immersing the first electrode 22 in a solvent in which the co-adsorbent is dissolved after the unimolecular hole transport compound is once adsorbed on the substrate, or may be mixed and dissolved in an organic solvent together with the unimolecular hole transport compound.

[0082] [Photoelectric conversion layer 14, 24] The photoelectric conversion layers 14 and 24 are not particularly limited and may be the same as photoelectric conversion layers used in photoelectric conversion modules such as general solar cells. The photoelectric conversion layers 14 and 24 include, for example, a perovskite compound. The perovskite compound may be, for example, a compound represented by the following chemical formula (IV). X α Y β Z γ (IV)

[0083] In the chemical formula (IV), the ratio of α:β:γ is, for example, 3:1:1, where X represents a halogen ion, Y represents a monovalent cation, and Z represents a divalent cation. The perovskite layer is preferably disposed adjacent to the electron transport layer. The ratio of α:β:γ is not necessarily 3:1:1, and may be, for example, 3:1.05:0.95 or 3:0.95:1.05. The ratio of α:β:γ is, for example, 3:(0.95-1.05):(0.95-1.05).

[0084] In the chemical formula (IV), X is not particularly limited and can be appropriately selected depending on the purpose, and examples thereof include halogen ions such as chlorine, bromine, and iodine. The halogen ions may be used alone or in combination of two or more kinds.

[0085] In the chemical formula (IV), Y is, for example, an alkylamine compound ion (organic compound having an amino group) such as methylammonium cation, ethylammonium cation, n-butylammonium cation, or formamidinium cation, or an alkali metal ion such as cesium cation, potassium cation, or rubidium cation, not limited to organic ions. The alkylamine compound ion and the alkali metal ion may be used alone or in combination of two or more kinds. In addition, an organic (alkylamine compound ion) and an inorganic (alkali metal ion) may be used in combination, for example, a cesium ion and a formamidine may be used in combination.

[0086] In the chemical formula (IV), Z is not particularly limited and can be appropriately selected according to the purpose, and examples thereof include divalent metal ions such as lead, indium, antimony, tin, copper, bismuth, and germanium. The divalent metal ions may be used alone or in combination of two or more. The divalent metal ion is particularly preferably lead, and more particularly preferably a combination of lead and tin.

[0087] As described above, the photoelectric conversion layers 14 and 24 may be formed from a perovskite compound. The method for forming the perovskite layer is not particularly limited and can be appropriately selected depending on the purpose, and examples thereof include a method in which a solution in which a metal halide and an alkylamine halide are dissolved or dispersed is applied and then dried.

[0088] In addition, the method for forming the perovskite layer may be, for example, a two-step precipitation method in which a solution in which a metal halide is dissolved or dispersed is applied and dried, and then the substrate is immersed in a solution in which a halogenated alkylamine is dissolved, thereby forming a perovskite compound.

[0089] Other methods for forming the perovskite layer include, for example, a method in which a poor solvent (solvent with low solubility) for the perovskite compound is added while a solution in which a metal halide and an alkylamine halide are dissolved or dispersed is applied to precipitate crystals, etc. Other methods for forming the perovskite layer include, for example, a method in which a metal halide is vapor-deposited in a gas filled with methylamine or the like.

[0090] The method of forming the perovskite layer is particularly preferably a method of precipitating crystals by applying a solution in which a metal halide and an alkylamine halide are dissolved or dispersed, while adding a poor solvent for the perovskite compound. The method of applying the solution is not particularly limited and can be appropriately selected depending on the purpose, and examples thereof include an immersion method, a spin coating method, a spray method, a dip method, a roller method, and an air knife method. The method of applying the solution may also be a method of precipitating in a supercritical fluid using, for example, carbon dioxide. In the method of precipitating crystals by adding a poor solvent, examples of the poor solvent include hydrocarbons such as n-hexane and n-octane; alcohols such as methanol, ethanol and 2-propanol; ethers such as diethyl ether and diisopropyl ether; ketones such as acetone and methyl isobutyl ketone; esters such as ethyl acetate, isobutyl acetate and γ-butyrolactone; nitriles such as acetonitrile and 3-methoxypropionitrile; aromatic hydrocarbon compounds such as benzene, toluene and chlorobenzene; halogen-based solvents such as dichloromethane and chloroform; and fluorine-based solvents such as chlorofluorocarbons, hydrochlorofluorocarbons and hydrofluorocarbons.

[0091] The method of forming the perovskite layer may further include, for example, a step for removing the solvent after forming the perovskite layer (solvent removal step) or a step for arranging the perovskite crystals (crystal arrangement step). The solvent removal step and the crystal arrangement step may include, for example, a method of blowing dry air or the like, a method of heating with a hot plate or an oven, a method of vacuum drying, etc. In the solvent removal step and the crystal arrangement step, the heating temperature is, for example, preferably 50 to 200°C, more preferably 70 to 180°C. In the solvent removal step and the crystal arrangement step, the heating time is, for example, preferably 1 to 150 minutes, more preferably 5 to 60 minutes. In addition, the thickness of the photoelectric conversion layer 14, 24 is not particularly limited, but from the viewpoint of further suppressing performance deterioration due to defects and peeling, it is, for example, preferably 50 to 1500 nm, more preferably 200 to 1000 nm.

[0092] The method for forming the perovskite layer may include, for example, a step of performing surface treatment using a salt formed from one or more cations and one or more anions (surface treatment step). The cation may be, for example, an inorganic cation such as lithium, sodium, potassium, rubidium, cesium, magnesium, or calcium; an ammonium cation, methylamine, ethylamine, n-butylamine, isopentylamine, neopentylamine, formamidine, acetamidine, benzylamine, 2-phenylethylamine, 2-(4-methoxyphenyl)ethylamine, 4-fluorobenzylamine, 2-(4-fluorophenyl)ethylamine, 1,4-phenylenediamine, 5-aminovaleric acid, methamine, ethylenediamine, p-xylylenediamine, m-xylylenediamine, or 1,2-adamantamine. Examples of the anion include organic compounds having an amino group such as benzenediamine, 1,3-adamantanediamine, N,N-dimethylethylenediamine, 1,3-diaminopropane, 1,4-diazabicyclo[2.2.2]octane, guanidine, aniline, pyrrole, imidazole, 1-ethylimidazole, 2-ethylimidazole, benzmidazole, morpholine, pyrrolidine, pyrazole, triazole, and carbazole; and cations obtained from heterocycles containing nitrogen atoms such as pyridine, pyrazine, pyridazine, pyrimidine, quinoline, isoquinoline, phenanthroline, 2,2'-bipyridyl, and 4,4'-bipyridyl. Examples of the anion include halogen ions such as fluorine ion, chlorine ion, bromine ion, and iodine ion; carboxylate ions such as formate ion and acetate ion; isocyanato ion, thiocyanate ion, tetrafluoroborate ion, and hexafluorophosphate ion; and trifluoromethanesulfonylimide ion.

[0093] The salt consisting of the cation and the anion is preferably dissolved in, for example, one or more kinds of solvents. Examples of the solvent include alcohols such as isopropanol (2-propanol), ethanol (EtOH), methanol (MeOH), butanol, etc.; nitriles such as acetonitrile, propionitrile, etc.; aromatic solvents such as toluene, chlorobenzene, 1,2-dichlorobenzene, etc. The solvent may be used alone or in combination of two or more kinds.

[0094] The surface treatment step is carried out by applying a solution in which the salt is dissolved onto the formed perovskite layer and drying it. The method of applying the solution is not particularly limited and can be appropriately selected depending on the purpose, and examples thereof include immersion, spin coating, spraying, dipping, roller, and air knife methods. In the surface treatment step, a heat treatment may be performed after the application. When heating is performed, the heating temperature is, for example, preferably 50 to 200°C, and more preferably 70 to 180°C. The heating time is, for example, preferably 1 to 150 minutes, and more preferably 5 to 60 minutes. The film thickness to which the solution is applied is not particularly limited.

[0095] [Second electrode 16, 26] The second electrodes 16, 26 (which may be, for example, back electrodes) are layers having a function of extracting holes or electrons from the photoelectric conversion layers 14, 24 via, for example, a hole transport layer or an electron transport layer.

[0096] The second electrodes 16, 26 may be formed directly on the hole transport layer 15 in the case of the forward structure, and may be formed directly on the electron transport layer 23 in the case of the reverse structure. The material of the second electrodes 16, 26 is not particularly limited, and may be, for example, the same material as that of the first electrodes 12, 22. The shape, structure, and size of the second electrodes 16, 26 are not particularly limited, and may be appropriately selected according to the purpose. Examples of the material of the second electrodes 16, 26 include metals, carbon compounds, conductive metal oxides, and conductive polymers. Examples of the metals include platinum, gold, silver, copper, and aluminum. Examples of the carbon compounds include graphite, fullerene, carbon nanotubes, and graphene. Examples of the conductive metal oxides include ITO, IZO, FTO, and ATO. Examples of the conductive polymers include polythiophene and polyaniline. The materials used to form the second electrodes 16, 26 may be, for example, one type alone or two or more types in combination.

[0097] The second electrodes 16, 26 can be formed on the hole transport layer 15 or the electron transport layer 23 by using a method such as coating, lamination, vacuum deposition, CVD, sputtering, and bonding, depending on the type of material used and the type of the hole transport layer 15 or the electron transport layer 23.

[0098] In addition, in the photoelectric conversion module of the present disclosure, at least one of the first electrode 12 or 22 and the second electrode 16 or 26 is preferably substantially transparent. When using the photoelectric conversion module of the present disclosure, it is preferable to make the electrodes transparent and allow incident light to be incident from the electrode side. In this case, it is preferable to use a material that reflects light for the back electrode (the electrode opposite to the transparent electrode, for example, the second electrode), and metals, glass on which conductive oxides are vapor-deposited, plastics, metal thin films, and the like are preferably used. In addition, providing an anti-reflection layer on the electrode on the incident light side is also an effective means.

[0099] Furthermore, the configuration of the photoelectric conversion module of the present disclosure is not limited to the configuration of FIG. 1 or FIG. 2. For example, the support 11 may be disposed on the opposite side to that of FIG. 1 (above the second electrode 16 in FIG. 1), and the second electrode 16, the electron transport layer 15, the photoelectric conversion layer 14, the hole transport layer 13, and the first electrode 12 may be laminated in this order on the support 11. Also, for example, as described above, other components may or may not be present between each layer of the support 11, the first electrode 12, the hole transport layer 13, the photoelectric conversion layer 14, the electron transport layer 15, and the second electrode 16. Also, although an example in which the first electrode 12 is a transparent electrode and the second electrode 16 is a back electrode has been described, the photoelectric conversion module of the present disclosure is not limited to this. For example, in the photoelectric conversion module of the present disclosure, the first electrode may be a back electrode and the second electrode may be a transparent electrode.

[0100] The total thickness of the photoelectric conversion module of the present disclosure can be appropriately changed depending on the thickness of the support used.

[0101] [Sealing] The photoelectric conversion module (e.g., solar cell) of the present disclosure is preferably sealed to protect the device from water and oxygen. The sealing structure is not particularly limited, and may be the same as that of a general photoelectric conversion module (e.g., solar cell), and specifically, for example, a sealing material may be applied only to the outer periphery of the photoelectric conversion module of the present disclosure and covered with glass or a film, a sealing material may be applied to the entire surface of the photoelectric conversion module of the present disclosure and covered with glass or a film, or a sealing material may be applied only to the entire surface of the photoelectric conversion module of the present disclosure.

[0102] The material of the sealing member is not particularly limited and can be appropriately selected depending on the purpose. For example, it is preferable to use an epoxy resin or an acrylic resin and to harden it, but it may be unhardened or only partially hardened.

[0103] The epoxy resin is not particularly limited, but examples thereof include water-dispersed, solvent-free, solid, heat-cured, curing agent-mixed, and ultraviolet-cured epoxy resins. Among these, heat-cured and ultraviolet-cured epoxy resins are preferred, and ultraviolet-cured epoxy resins are more preferred. In addition, even if the epoxy resin is ultraviolet-cured, it is possible to perform heating, and it is preferred to perform heating even after ultraviolet curing. Specific examples of the epoxy resin include bisphenol A type, bisphenol F type, novolac type, cyclic aliphatic type, long-chain aliphatic type, glycidylamine type, glycidyl ether type, and glycidyl ester type, which may be used alone or in combination of two or more types. In addition, it is preferred to mix a curing agent or various additives with the epoxy resin as necessary. An epoxy resin composition that is already commercially available can be used in the present disclosure. The commercially available epoxy resin composition includes an epoxy resin composition that has been developed and is commercially available for use in solar cells and organic EL elements, and can be used particularly effectively in the present disclosure. Examples of commercially available epoxy resin compositions include TB3118, TB3114, TB3124, TB3125F (manufactured by ThreeBond Co., Ltd.), WorldRock5910, WorldRock5920, WorldRock8723 (manufactured by Kyoritsu Chemical Industries Co., Ltd.), WB90US(P), and WB90US-HV (manufactured by Moresco Co., Ltd.).

[0104] The acrylic resin is not particularly limited, but for example, those developed and commercially available for solar cell and organic EL element applications can be effectively used. Examples of the commercially available acrylic resin composition include TB3035B and TB3035C (manufactured by ThreeBond Co., Ltd.).

[0105] The curing agent is not particularly limited and can be appropriately selected according to the purpose, and examples thereof include amine-based, acid anhydride-based, polyamide-based, and other curing agents. Examples of the amine-based curing agent include aliphatic polyamines such as diethylenetriamine and triethylenetetramine; and aromatic polyamines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone. Examples of the acid anhydride-based curing agent include phthalic anhydride, tetrahydrophthalic anhydride and hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, pyromellitic anhydride, HET anhydride, and dodecenyl succinic anhydride. Examples of the other curing agents include imidazoles and polymercaptan. The curing agent may be used alone or in combination of two or more.

[0106] The additives are not particularly limited and can be appropriately selected according to the purpose. For example, fillers, gap agents, polymerization initiators, drying agents (moisture absorbers), curing accelerators, coupling agents, flexibilizers, colorants, flame retardant assistants, antioxidants, and organic solvents are listed. Fillers, gap agents, curing accelerators, polymerization initiators, and drying agents (moisture absorbers) are preferred, and fillers and polymerization initiators are more preferred. By including the fillers as the additives, it is possible to suppress the intrusion of moisture and oxygen, and further to obtain effects such as reduction in volumetric shrinkage during curing, reduction in the amount of outgassing during curing or heating, improvement in mechanical strength, and control of thermal conductivity and fluidity. Therefore, including the fillers as the additives is very effective in maintaining stable output in various environments.

[0107] In addition, with regard to the output characteristics and durability of the photovoltaic conversion module, not only the influence of moisture and oxygen that penetrates, but also the influence of outgassing that occurs when the sealing member is cured or heated cannot be ignored. In particular, the influence of outgassing that occurs when heated has a large effect on the output characteristics during storage in a high-temperature environment. By incorporating the filler, the gap agent, and the desiccant in the sealing member, these themselves can suppress the intrusion of moisture and oxygen, and the amount of the sealing member used can be reduced, thereby obtaining the effect of reducing outgassing. Incorporating the filler, the gap agent, and the desiccant in the sealing member is effective not only during curing, but also when storing the photovoltaic conversion module in a high-temperature environment.

[0108] The filler is not particularly limited and can be appropriately selected depending on the purpose, and examples thereof include inorganic fillers such as crystalline or amorphous silica, silicate minerals such as talc, alumina, aluminum nitride, silicon nitride, calcium silicate, and calcium carbonate, and hydrotalcite is particularly preferred. The fillers may be used alone or in combination of two or more.

[0109] The average primary particle size of the filler is not particularly limited, but is preferably 0.1 μm to 10 μm, more preferably 1 μm to 5 μm. When the average primary particle size of the filler is within the above preferred range, the effect of suppressing the intrusion of moisture and oxygen can be sufficiently obtained, the viscosity becomes appropriate, the adhesion to the substrate and the defoaming property are improved, and it is also effective in controlling the width of the sealing part and in workability.

[0110] The content of the filler is preferably from 10 to 90 parts by mass, more preferably from 20 to 70 parts by mass, based on the entire sealing member (100 parts by mass). When the content of the filler is within the above preferred range, a sufficient effect of suppressing the intrusion of moisture and oxygen is obtained, the viscosity is appropriate, and the adhesion and workability are also good.

[0111] The gap agent is also called a gap control agent or a spacer agent. By including the gap agent as the additive, it becomes possible to control the gap of the sealing portion. For example, when a sealing member is applied on a substrate or a first electrode, and a second substrate is placed thereon to perform sealing, the gap of the sealing portion is aligned to the size of the gap agent because the sealing member contains the gap agent, and therefore the gap of the sealing portion can be easily controlled.

[0112] The gap agent is not particularly limited, but is preferably granular, has a uniform particle size, and has high solvent resistance and heat resistance, and can be appropriately selected according to the purpose. The gap agent is preferably one that has high affinity with epoxy resin and has a spherical particle shape. Specifically, the gap agent is preferably glass beads, silica fine particles, organic resin fine particles, etc. The gap agent may be used alone or in combination of two or more types. The particle size of the gap agent can be selected according to the gap of the sealing part to be set, but is preferably 1 μm or more and 100 μm or less, and more preferably 5 μm or more and 50 μm or less.

[0113] The polymerization initiator is not particularly limited, and examples thereof include polymerization initiators that use heat or light to initiate polymerization, and can be appropriately selected according to the purpose. For example, thermal cationic polymerization initiators and photo-cationic polymerization initiators can be mentioned. The thermal polymerization initiator is a compound that generates active species such as radicals and cations by heating, and examples thereof include azo compounds such as 2,2'-azobisbutyronitrile (AIBN) and peroxides such as benzoyl peroxide (BPO). For example, benzenesulfonic acid esters and alkylsulfonium salts can be used as the thermal cationic polymerization initiator. For example, in the case of an epoxy resin, a photo-cationic polymerization initiator is preferably used as the photo-cationic polymerization initiator. When an epoxy resin is mixed with a photo-cationic polymerization initiator and irradiated with light, the photo-cationic polymerization initiator decomposes to generate an acid, which causes polymerization of the epoxy resin, and the curing reaction proceeds. The photo-cationic polymerization initiator has the effects of having little volume shrinkage during curing, not being inhibited by oxygen, and having high storage stability.

[0114] Examples of the photocationic polymerization initiator include aromatic diazonium salts, aromatic iodonium salts, aromatic sulfonium salts, methacerone compounds, and silanol-aluminum complexes. As the polymerization initiator, a photoacid generator having a function of generating an acid by irradiation with light can also be used. The photoacid generator acts as an acid that initiates cationic polymerization, and examples of the photoacid generator include ionic onium salts such as sulfonium salts and iodonium salts that are composed of a cationic moiety and an anionic moiety. The photoacid generator may be used alone or in combination of two or more kinds.

[0115] The amount of the polymerization initiator to be added is not particularly limited and may vary depending on the material used, but is preferably 0.5 parts by mass to 10 parts by mass, more preferably 1 part by mass to 5 parts by mass, relative to the entire sealing member (100 parts by mass). By adding the amount within the above preferred range, curing can proceed properly, the amount of uncured material remaining can be reduced, and excessive outgassing can be prevented.

[0116] The desiccant (also called moisture absorbent) is a material that has the function of physically or chemically adsorbing or absorbing moisture, and by including it in the sealing member, the moisture resistance can be further improved and the influence of outgassing can be reduced. The desiccant is not particularly limited and can be appropriately selected depending on the purpose, but a particulate desiccant is preferable, and examples of the desiccant include inorganic water-absorbing materials such as calcium oxide, barium oxide, magnesium oxide, magnesium sulfate, sodium sulfate, calcium chloride, silica gel, molecular sieve, and zeolite, and zeolite, which has a high moisture absorption capacity, is preferable. The desiccant may be used alone or in combination of two or more kinds.

[0117] The curing accelerator (also called a curing catalyst) is a material that accelerates the curing speed, and is mainly used for thermosetting epoxy resins. The curing accelerator is not particularly limited and can be appropriately selected according to the purpose. For example, tertiary amines or tertiary amine salts such as DBU (1,8-diazabicyclo(5,4,0)-undecene-7) and DBN (1,5-diazabicyclo(4,3,0)-nonene-5) and the like; imidazoles such as 1-cyanoethyl-2-ethyl-4-methylimidazole and 2-ethyl-4-methylimidazole; phosphines or phosphonium salts such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate and the like can be mentioned. The curing accelerator may be used alone or in combination of two or more kinds.

[0118] The coupling agent is not particularly limited as long as it is a material that has the effect of enhancing molecular bonding strength, and can be appropriately selected according to the purpose, and examples thereof include silane coupling agents. Specific examples of the coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, N-(2-aminoethyl)3-aminopropylmethyldimethoxysilane, N-(2-aminoethyl)3-aminopropylmethyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, vinyltrimethoxysilane, N-(2-(vinylbenzylamino)ethyl)3-aminopropyltrimethoxysilane hydrochloride, and 3-methacryloxypropyltrimethoxysilane. The coupling agent may be used alone or in combination of two or more kinds.

[0119] In the present disclosure, for example, a sheet-like adhesive can be used. The sheet-like adhesive is, for example, a sheet on which a resin layer has been formed in advance, and the sheet can be made of glass or a film with high gas barrier properties. The sheet may also be made of only a sealing resin. The sheet-like adhesive can also be attached onto a sealing film. It is also possible to form a structure in which a hollow portion is provided on the sealing film and then attach it to a device.

[0120] When the sealing film is used for sealing, the photoelectric conversion device is disposed facing the support so as to sandwich the photoelectric conversion device. The shape, structure, size, and type of the substrate of the sealing film are not particularly limited and can be appropriately selected according to the purpose. The sealing film forms a barrier layer on the surface of the substrate to prevent the passage of moisture and oxygen, and may be formed on only one side or both sides of the substrate.

[0121] The barrier layer may be made of a material mainly composed of, for example, a metal oxide, a metal, or a mixture formed of a polymer and a metal alkoxide. Examples of the metal oxide include aluminum oxide, silicon oxide, and aluminum. Examples of the polymer include polyvinyl alcohol, polyvinylpyrrolidone, and methyl cellulose. Examples of the metal alkoxide include tetraethoxysilane, triisopropoxyaluminum, 3-glycidoxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, and 3-isocyanatopropyltriethoxysilane.

[0122] The barrier layer may be transparent or opaque, for example. The barrier layer may be a single layer or a laminated structure of a plurality of layers made of the above-mentioned materials. The barrier layer may be formed by a known method, and may be formed by vacuum film formation such as sputtering, dipping, roll coating, screen printing, spraying, gravure printing, or other coating methods.

[0123] [wiring] In the photoelectric conversion module (e.g., solar cell) of the present disclosure, it is preferable to connect lead wires (wiring) to the electrode and the back electrode in order to efficiently extract the current generated by light. The lead wires are connected to the first electrode and the second electrode, for example, using a conductive material such as solder, silver paste, or graphite. The conductive material may be used alone or in a mixed or laminated structure of two or more kinds. In addition, the part to which the lead wires are attached may be covered with an acrylic resin or an epoxy resin from the viewpoint of physical protection.

[0124] The lead wire is a general term for electric wires for electrically connecting a power source, electronic components, etc. in an electric circuit, and examples thereof include vinyl wires and enamel wires.

[0125] [application] The application and method of use of the photoelectric conversion module of the present disclosure are not particularly limited, and can be widely used for applications similar to those of a general photoelectric conversion module (for example, a general solar cell). The photoelectric conversion module of the present disclosure (for example, a solar cell) can be applied to a power supply device by combining it with a circuit board that controls the generated current, for example. Examples of devices that use a power supply device include electronic desk calculators and solar radio watches. The photoelectric conversion module of the present disclosure can also be applied as a power supply device to mobile phones, electronic paper, thermometers, hygrometers, etc. In addition, it can be applied as an auxiliary power source for extending the continuous use time of rechargeable or battery-powered electrical appliances, or for nighttime use by combining it with a secondary battery. It can also be used as an independent power source that does not require battery replacement or power wiring. EXAMPLES

[0126] Examples of the present disclosure will be described below, but the present disclosure is not limited to the following examples.

[0127] [Example 1] A DMF solution in which a compound represented by the following chemical formula (V) (0.1 mmol / L) and 4-phosphonobutyric acid (12 mmol / L) were dissolved was placed on an ITO glass substrate 41 patterned in advance as shown in Fig. 6, and the solution was applied using a spin coater (3,000 rpm, 30 seconds), and then heated and dried on a hot plate at 100°C for 10 minutes to form a monomolecular hole transport layer on the first electrode 42 (not shown). Next, cesium iodide (0.738 g), formamidine iodide (7.512 g), methylamine bromide (0.905 g), lead iodide (23.888 g), and lead bromide (1.022 g) were dissolved in N,N-dimethylformamide (DMF, 40.0 mL) and dimethyl sulfoxide (DMSO, 12.0 mL), and the solution was formed on the substrate by spin coating. The spin coater was set to a rotation speed of 3000 rpm, and chlorobenzene (0.3 mL) was dropped onto the coating layer of the substrate 30 seconds after the start of spin coater. After that, the substrate was heated at 150° C. for 10 minutes to obtain a perovskite layer as a photoelectric conversion layer. Next, C60 (electron transport layer) of 20 nm and bathocuproine (BCP, 8 nm) (electron injection layer) were formed by vacuum deposition (not shown). Then, the photoelectric conversion layer (perovskite layer) was etched (removed) using a laser processing device to form a pattern of the photoelectric conversion layer (perovskite layer) 43 as shown in FIG. 7. Finally, Ag was formed to a thickness of 70 nm by vacuum deposition, and the second electrode 44 was etched (removed) using a laser processing device to obtain a photoelectric conversion module (perovskite solar cell module) with a shape as shown in FIG. 8. Finally, as shown in FIG. 9, laser processing was performed in a direction crossing the strip-shaped cell. At this time, processing was performed so that the first electrode 42 would not be etched by the laser processing. A synthesis example of the compound of the following chemical formula (V) will be described later.

[0128] [ka]

[0129] The photoelectric conversion module prepared by the above procedure was combined with an air mass filter equivalent to AM1.5G to create a solar simulator (Bunkokeiki Co., Ltd. SMO-250III type, light output 100mW / cm 2 The voltage and current were measured using a source meter (Keithley Model 2400). The results are shown in Table 1.

[0130] [Comparative Example 1] The characteristics were evaluated before laser processing was performed in the direction across the strip-shaped cells in Example 1 (corresponding to FIG. 8). The photoelectric conversion characteristics of the obtained photoelectric conversion module were measured in the same manner as in Example 1, and the results are shown in Table 1.

[0131] [Example 2] A colloidal SnO2 aqueous solution (manufactured by Alpha Acer) was applied by spin coating on an ITO glass substrate 41 patterned in advance into the shape shown in FIG. 6, and dried at 100° C. to obtain an electron transport layer (not shown). In this example, a glass substrate was used, but other substrates, such as a plastic film substrate described in the embodiment, may be used. Even if the substrate was changed, there was no difference in the performance of the photoelectric conversion module of the present disclosure. Next, cesium iodide (0.738 g), formamidine iodide (7.512 g), methylamine bromide (0.905 g), lead iodide (23.888 g), and lead bromide (1.022 g) were dissolved in N,N-dimethylformamide (DMF, 40.0 mL) and dimethyl sulfoxide (DMSO, 12.0 mL), and the solution was formed on the substrate by spin coating. The spin coating was performed at a rotation speed of 3000 rpm, and 30 seconds after the start of spin coating, chlorobenzene (0.3 mL) was dropped onto the coating layer of the substrate, followed by heating at 150° C. for 10 minutes to obtain a perovskite layer as a photoelectric conversion layer. Next, spiro-OMeTAD (chemical structure shown in the following chemical formula (VI)) (72.3 mg), [tris(2-(1H-pyrazol-1-yl)-4-tert-butylpyridine)cobalt(III)tris(bis(trifluoromethylsulfonyl)imide)] (FK209, Fujifilm Wako Pure Chemical Industries, Ltd., 13.5 mg), 4-tert-butylpyridine (28.8 μL), and lithium bis(trifluoromethylsulfonyl)imide (LiTFSI, 9.1 mg) were dissolved in chlorobenzene (1 mL), and a layer of the dissolved solution was formed on the photoelectric conversion layer by spin coating, and heated and dried at 70 ° C. for 30 minutes to obtain a hole transport layer (not shown). Thereafter, etching (removal) of the photoelectric conversion layer (perovskite layer) 43 was performed using a laser processing device, and a pattern of the photoelectric conversion layer (perovskite layer) 43 as shown in FIG. 7 was formed. Finally, 70 nm of Au was formed by vacuum deposition, and the second electrode 44 was etched (removed) using a laser processing device to obtain a photoelectric conversion module (perovskite solar cell module) with the shape shown in Fig. 8. And finally, as shown in Fig. 9, laser processing was performed in the direction across the strip-shaped cell.At this time, the processing was performed so as not to etch the first electrode 42 by laser processing. The photoelectric conversion characteristics of the obtained photoelectric conversion module were measured in the same manner as in Example 1, and the results are shown in Table 1.

[0132] [ka]

[0133] [Comparative Example 2] The characteristics were evaluated before laser processing was performed in the direction across the strip-shaped cells in Example 2 (corresponding to FIG. 8). The photoelectric conversion characteristics of the obtained photoelectric conversion module were measured in the same manner as in Example 1, and the results are shown in Table 1.

[0134] [Table 1]

[0135] In Example 1, by performing the cross-cut processing of the strip cells, good characteristics were obtained for all three samples. In Comparative Example 1, in which the cross-cut processing of the strip cells was not performed, one strip cell was shorted in Samples No. (1) and No. (3), and two strip cells were shorted in Sample No. (2), and it can be seen that the open circuit voltage was reduced by the number of shorted cells. There are various possible causes of shorts, and one possible example is the case where foreign matter adheres to the device surface during the manufacturing process. As shown in FIG. 10, if there is even one shorted part, all existing cells are affected, whereas by performing the cross-cut processing of the strip cells as shown in FIG. 11 in the present disclosure, the range affected by the short is reduced, the impact on the entire solar cell is reduced, and it is clear that good performance can be obtained. In the case of Comparative Example 2, (1) has one cell that has been degraded by a short, and (2) and (3) have two shorted cells, whereas by performing the cross-cut processing as in Example 2, the impact of the performance degradation is reduced as much as possible, which was the same as in Example 1.

[0136] [Example 3] A photoelectric conversion module was produced in the same manner as in Example 1. A solar simulator (light intensity 100 mW / cm 2 ) was produced by combining the obtained photoelectric conversion module with an air mass filter equivalent to AM1.5G. 2 ) was continuously irradiated for 500 hours. Table 2 shows the solar cell characteristics before and after the continuous irradiation test.

[0137] [Comparative Example 3] Ten photoelectric conversion modules were produced in the same manner as in Comparative Example 1. One sample that was not short-circuited was selected from the modules and subjected to a continuous irradiation test in the same manner as in Example 3. The results are shown in Table 2.

[0138] [Table 2]

[0139] From Table 2, it was confirmed that in Example 3, in which processing was performed across the strip-shaped cells, the retention rate was 97.4%, with almost no change in characteristics even after continuous irradiation tests, whereas the retention rate was significantly reduced to 44.5% in Comparative Example 3. When observing the cause of the reduction, it is considered that a short circuit occurred in the two cells, as the open circuit voltage equivalent to two cells was reduced, resulting in a significant reduction in characteristics.

[0140] [Example 4] A photoelectric conversion module was produced in the same manner as in Example 1, except that a DMF solution in which a compound represented by (VII) below (1.0 mmol / L) was dissolved was used instead of the DMF solution in which a compound represented by (I) (0.1 mmol / L) and 4-phosphonobutyric acid (12 mmol / L) in Example 1 was dissolved. The characteristics of the obtained photoelectric conversion module were evaluated in the same manner as in Example 1. The evaluation results are shown in Table 3.

[0141] [ka]

[0142] [Comparative Example 4] The characteristics were evaluated before laser processing was performed in the direction across the strip-shaped cells in Example 4 (corresponding to FIG. 8). The photoelectric conversion characteristics of the obtained photoelectric conversion module were measured in the same manner as in Example 1, and the results are shown in Table 3.

[0143] [Table 3]

[0144] It is clear from Table 3 that, while the open circuit voltage equivalent to one cell is reduced in Comparative Example 4, good characteristics are obtained from Example 4 in which the strip-shaped cells are transversely processed.

[0145] As described above, the photovoltaic conversion module of the present disclosure can provide a photovoltaic conversion module with excellent performance by minimizing the effect of short circuits by performing cross-sectional processing on the strip-shaped cells. In addition, by performing cross-sectional processing on the strip-shaped cells of the present disclosure, it is possible to suppress the deterioration of characteristics during continuous irradiation tests when using a monomolecular hole transport material.

[0146] Next, a synthesis example of the compound included in the above chemical formula (I) including 4-PATAT will be described. In the following examples, the yield (%) is the yield (mol%) based on the amount of substance (mol) unless otherwise specified. In addition, the NMR (nuclear magnetic resonance) spectrum was measured using AV400M manufactured by Bruker.

[0147] [Example A1: Synthesis of 4-PATAT] According to the procedures of the following Synthesis Examples 1 to 3, 4-PATAT, which is one of the compounds of the present invention (the compound represented by the above chemical formula (I)), was synthesized (produced).

[0148] Synthesis Example 1 Synthesis (production) of 4-Br-TAT

[0149] [ka]

[0150] Compound TAT (345 mg) and N,N-dimethylformamide (DMF, 3.5 ml) in the above scheme 1 were placed in a three-neck flask, and sodium hydride (144 mg) was slowly added while stirring at room temperature under argon gas flow. After 10 minutes, 1,4-dibromobutane (3.24 g) was added while stirring at room temperature, and stirring was continued for another 1.5 hours. Thereafter, water was added to stop the reaction, and the mixture was extracted three times with dichloromethane. The extracted organic layer was washed with a saturated aqueous sodium chloride solution, dried with sodium sulfate, and the solvent was distilled off. The residue thus obtained was purified by silica gel column chromatography (eluent: n-hexane / dichloromethane = 2 / 1 to 1 / 1 (volume ratio)), and 526 mg of white crystalline 4Br-TAT (see chemical formula in the above scheme 1) was obtained. The yield was 70% based on the raw material TAT.

[0151] Synthesis Example 2 Synthesis (production) of 4-PAE-TAT

[0152] [ka]

[0153] 4Br-TAT (400 mg) and triethyl phosphite (1.06 g) were placed in a three-neck flask and heated and stirred at 150° C. for 19.5 hours under an argon gas stream. After cooling to room temperature, excess triethyl phosphite was distilled off under reduced pressure. The residue was purified by silica gel column chromatography to obtain 597 mg of 4PAE-TAT (see the chemical formula in Scheme 2) as a colorless oil. The yield was quantitative based on the raw material 4Br-TAT.

[0154] Synthesis Example 3 Synthesis (production) of 4-PATAT

[0155] [ka]

[0156] 4PAE-TAT (500 mg) and dichloromethane (15 mL) were placed in a three-neck flask, and trimethylsilane bromide (0.821 mg) was slowly added under argon gas flow while stirring at room temperature. After 15 hours, methanol (10 mL) was added and stirring was continued for another 2 hours. The reaction liquid was slowly distilled off, and the resulting residue was extracted with a solvent of dichloromethane / methanol = 20 / 1 (volume ratio) to obtain 302 mg of 4PATAT (see the chemical formula in Scheme 3 above) as pale blue crystals. The yield was 74% based on the raw material 4PAE-TAT. 1 The H-NMR (DMSO-D6, 400 MHz) spectrum is shown in Figure 12.

[0157] [Example A2: Synthesis of 1-legged-3PATAT] According to the procedures of the following Synthesis Examples 4 to 6, 1-legged-3PATAT, which is one of the compounds of the present invention (compounds represented by the above chemical formula (I)), was synthesized (produced).

[0158] Synthesis Example 4 Synthesis (production) of 1-legged-3PAE-TAT

[0159] [ka]

[0160] Compound TAT (1.04 g) and DMF (10 ml) in the above scheme 4 were placed in a three-neck flask, and sodium hydride (144 mg) was slowly added while stirring at room temperature under an argon gas stream. Next, diethyl (3-bromopropyl)phosphonate (3.90 g) was added dropwise, and after the completion of the dropwise addition, the mixture was heated and stirred at 65°C. After 36 hours, the reaction was stopped and extracted three times with ethyl acetate. The extracted organic layer was washed with a saturated aqueous sodium chloride solution, dried over sodium sulfate, and the solvent was distilled off. The obtained residue was purified by silica gel column chromatography (eluent: dichloromethane / methanol = 100 / 1 to 50 / 1 (volume ratio)), and 240 mg of 1-legged-3PAE-TAT (see the chemical formula in the above scheme 4) was obtained. The yield was 15% based on the raw material TAT. The amount of 1-legged-3PAE-TAT was 1.1 The H-NMR (DMSO-D6, 400 MHz) spectrum is shown in Figure 13.

[0161] Synthesis Example 5 Synthesis (production) of 1-legged-3PAEE-TAT

[0162] [ka]

[0163] 1-legged-3PAE-TAT (215 mg), ethyl iodide (0.141 mg), and DMF (4.1 mL) were placed in a three-neck flask, and sodium hydride (43.4 mg) was slowly added while stirring at room temperature under an argon gas stream. Stirring was continued for 1.5 hours, water was added to stop the reaction, and the mixture was extracted with ethyl acetate. After drying with sodium sulfate, the solvent was distilled off. The residue was purified by silica gel column chromatography (eluent: toluene) to obtain 147 mg of 1-legged-3PAEE-TAT (see the chemical formula in Scheme 5) as a brown oil. The yield was 63% based on the raw material 1-legged-3PAE-TAT.

[0164] Synthesis Example 6 Synthesis (production) of 1-legged-3PATAT

[0165] [ka]

[0166] 1-legged-3PAEE-TAT (115 mg) and dichloromethane (5.4 mL) were placed in a three-neck flask, and trimethylsilane bromide (0.10 mg) was slowly added under argon gas while stirring at room temperature. After 16 hours, methanol (3.6 mL) was added and stirring was continued for another 15 hours. The reaction solution was slowly distilled off, and the resulting residue was extracted with a solvent (volume ratio) of dichloromethane / methanol = 20 / 1 to obtain 93 mg of 1-legged-3PATAT (see the chemical formula in Scheme 6) as pale blue crystals. The yield was 89% based on the raw material 1-legged-3PAEE-TAT.

[0167] [Example A3: Synthesis of 1-legged-3PATAT-H] According to the procedure of the following Synthesis Example 7, 1-legged-3PATAT-H, which is one of the compounds of the present invention (compounds represented by the above chemical formula (I)), was synthesized (produced).

[0168] Synthesis Example 7 Synthesis of 1-legged-3PATAT-H

[0169] [ka]

[0170] The 1-legged-3PAE-TAT (150 mg) synthesized (produced) in Scheme 4 and dichloromethane (3.2 mL) were placed in a three-neck flask, and trimethylsilane bromide (0.052 mg) was slowly added under argon gas flow while stirring at room temperature. After 22 hours, the reaction solution was slowly distilled off, and the resulting residue was extracted with a solvent of dichloromethane / methanol = 10 / 1 (volume ratio) and washed with dichloromethane to obtain 56.2 mg of 1-legged-3PATAT-H (see the chemical formula in Scheme 7) as pale blue crystals. The yield was 42% based on the raw material 1-legged-3PAE-TAT. The amount of 1-legged-3PATAT-H was 1.0 mg. 1 The H-NMR (DMSO-D6, 400 MHz) spectrum is shown in Figure 14. Mass spectrometry of 1-legged-3PATAT-H was measured using a Bruker TIMS-TOF (IMS-QTOF) and found that m / z=466.1324 [M] - obtained.

[0171] [Example A4: Synthesis of 1-legged-3PATAT] According to the procedures of the following Synthesis Examples 8 to 9, 1-legged-3PATAT, which is one of the compounds of the present invention (the compound represented by the above chemical formula (I)), was synthesized (produced).

[0172] Synthesis Example 8 Synthesis (production) of 2-legged-3PAH-TAT

[0173] [ka]

[0174] TAT (345 mg) and DMF (10 ml) were placed in a three-neck flask, and sodium hydride (48 mg) was slowly added while stirring at room temperature under an argon gas stream. Next, diethyl (3-bromopropyl)phosphonate (0.57 g) was added dropwise, and after the completion of the dropwise addition, the mixture was heated and stirred at 70°C. After 36 hours, the reaction was stopped and extracted three times with dichloromethane. The organic layer was washed with a saturated aqueous sodium chloride solution, dried over magnesium sulfate, and the solvent was distilled off. The residue was purified by silica gel column chromatography (eluent: ethyl acetate / methanol = 1 / 1 to 10 / 1 (volume ratio)), and 157 mg of 2-legged-3PAH-TAT (see the chemical formula in Scheme 8) was obtained. The yield was 22% based on the raw material TAT. The 2-legged-3PAH-TAT 1 The H-NMR (DMSO-D6, 400 MHz) spectrum is shown in Figure 15.

[0175] Synthesis Example 9 Synthesis (production) of 2-legged-3PATAT

[0176] [ka]

[0177] 2-legged-3PAH-TAT (47 mg) and dichloromethane (2.8 mL) were placed in a three-neck flask, and trimethylsilane bromide (0.124 mg) was slowly added under argon gas flow while stirring at room temperature. After 23 hours, the reaction solution was slowly distilled off, and the resulting residue was extracted with a solvent of dichloromethane / methanol = 10 / 1 (volume ratio) and washed with dichloromethane to obtain 15 mg of 2-legged-3PATAT (see the chemical formula in Scheme 9 above) as pale blue crystals. The yield was 37% based on the raw material 2-legged-3PAH-TAT. The 2-legged-3PATAT 1The H-NMR (DMSO-D6, 400 MHz) spectrum is shown in Figure 16. Mass spectrometry of 1-legged-3PATAT-H was measured using a Bruker TIMS-TOF (IMS-QTOF) and found that m / z=588.1459 [M] - obtained.

[0178] The present disclosure has been described above using embodiments and examples. However, the present disclosure is not limited to the embodiments and examples described above, and can be arbitrarily and appropriately combined, modified, or selected and adopted as necessary within the scope of the gist of the present disclosure. [Industrial Applicability]

[0179] As described above, according to the present disclosure, a photovoltaic module with good performance can be provided by performing processing across the strip-shaped cells. The photovoltaic module of the present disclosure is useful, for example, as a solar cell. The application and method of use of the photovoltaic module of the present disclosure are not particularly limited, and can be applied in a wide range of fields, for example, with the same application and method of use as a general photovoltaic module (for example, a general solar cell). [Explanation of symbols]

[0180] 10, 20 Photoelectric conversion module 11, 21 Support 12, 22 First electrode 13, 23 Electron transport layer 14, 24 Photoelectric conversion layer 15, 25 Hole transport layer 16, 26 Second electrode

Claims

1. A photovoltaic conversion module having strip-shaped cells divided into a plurality of cells in a direction in which the cells are connected in series, a first electrode; a photoelectric conversion layer located on the first electrode; a second electrode located on the photoelectric conversion layer; Including, the photoelectric conversion layer and the second electrode are divided in the direction in which they are connected in series, A photoelectric conversion module, wherein a part of the first electrode is not divided in the direction of the series connection and remains electrically connected to adjacent strip-shaped cells.

2. 2. The photovoltaic conversion module according to claim 1, wherein the photovoltaic conversion layer contains a perovskite compound.

3. 3. The photoelectric conversion module according to claim 1, wherein an electron transport layer or a hole transport layer is present at least one between the photoelectric conversion layer and the first electrode and between the photoelectric conversion layer and the second electrode.

4. a hole transport layer is present between the photoelectric conversion layer and the first electrode; 3. The photoelectric conversion module according to claim 1, wherein the hole transport layer contains a compound represented by the following chemical formula (I): [Chemical Formula I] In the above chemical formula (I), Ar １ is a structure containing an aromatic ring, and the atoms constituting the aromatic ring may or may not contain a heteroatom, Ar １ Is, -L １ -X １ may or may not have a substituent other than -L １ -X １ may be one or more, and in the case of more than one, each L １ and each X １ may be the same or different from each other, Each L １ is Ar １ and X １ or a covalent bond, Each X １ are groups capable of donating and receiving charges to and from the first electrode.

5. In the above chemical formula (I), Each X １ are phosphonic acid groups (-P=O(OH) ２ ), carboxy group (-COOH), sulfo group (-SO ３ H), boronic acid group (-B(OH) ２ ), or a trihalogenated silyl group (—SiX ３ , where X is a halo group), trialkoxysilyl group (—Si(OR) ３ 5. The photoelectric conversion module according to claim 4, wherein R is an alkyl group.

6. In the chemical formula (I), the Ar １ The photoelectric conversion module according to claim 4, wherein is represented by the following chemical formula (I-1): [Chemical Formula I-1] In the chemical formula (I-1), Ar １１ represents an atomic group containing a cyclic structure, and the cyclic structure may be an aromatic ring or a non-aromatic ring, a monocyclic ring, a fused ring, or a spiro ring, and may or may not contain heteroatoms among the atoms constituting the ring; Ar １２ is an aromatic ring, which may or may not contain heteroatoms among the atoms constituting the ring, Ar １２ is one or more atoms in Ar １１ Share with Ar １１ It may be integrated with Ar １２ may be one or more, and when there are more than one, they may be the same or different.

7. In the chemical formula (I-1), the Ar １１ The photoelectric conversion module according to claim 6, wherein is represented by any one of the following chemical formulas (a1) to (a10): 【Transform a1-a10】

8. In the chemical formula (I-1), each Ar １２ and each of which is represented by the following chemical formula (b): 【b】 In the chemical formula (b), Carbon atom C １ and C ２ is the Ar in the chemical formula (I-1). １１ and also serves as a part of the atoms constituting the cyclic structure in The R １ represents a hydrogen atom, X in the chemical formula (I) １ or a substituent, wherein the substituent may or may not contain a hydrogen atom, and at least one of the hydrogen atoms in the substituent is X in the chemical formula (I). １ may be substituted with Each of the R １１ may be the same or different, and each is a hydrogen atom or a substituent, or two adjacent R １１ may form a condensed ring together with the benzene ring to which they are attached, Each of the R １１ may or may not further have a substituent.

9. 9. The photoelectric conversion module according to claim 8, wherein the chemical formula (b) is represented by any one of the following chemical formulas (b1) to (b7): 【b1-b7】 In the chemical formulas (b1) to (b7), C １ , C ２ and R １ are the same as those in the chemical formula (b).

10. 5. The photoelectric conversion module according to claim 4, wherein the compound represented by chemical formula (I) is a compound represented by any one of the following chemical formulas A-1 to A-23: [Chemical Formula A1A4] 【Chemical A5A8】 【Hua9A12】 【A13A16】 【Chemical A17A20】 【A21A23】 In the chemical formulas A-1 to A-23, Each of the R １ are each a hydrogen atom or X in the chemical formula (I), １ or X in the chemical formula (I) １ which may be the same or different, and which are further substituted by Each of the R １ At least one of the X in the chemical formula (I) １ or X in the chemical formula (I) １ is a substituent further substituted with The R ２ is a substituent, and may be present in one or more groups, or may not be present. When there are more than one group, each R ２ may be the same or different from each other.

11. The photoelectric conversion module according to claim 4, wherein the compound represented by chemical formula (I) is a compound represented by the following chemical formula: 4PATAT, 1-legged-3PATAT, 1-legged-3PATAT-H, or 2-legged-3PATAT. 【4PATAT】 【3PATAT1】 【3PATATH】 【3PATAT2】

12. a hole transport layer is present between the photoelectric conversion layer and the first electrode; 3. The photoelectric conversion module according to claim 1, wherein the hole transport layer contains a compound represented by the following chemical formula (III): Ar-L-X (III) In the chemical formula (III), Ar represents a structure containing an aromatic ring or a heterocycle which may have a substituent, L represents a divalent substituent which bonds Ar and X, and X represents a dihydroxyphosphoryl group (-P=O(OH) ２ ), carboxy group (-COOH), sulfo group (-SO ３ H), boronic acid group (-B(OH) ２ ), trihalogenated silyl group (—SiX ３ , where X is a halogen group), trialkoxysilyl group (—Si(OR) ３ wherein R is selected from the group consisting of an alkyl group, a trihydroxysilyl group, and a dialkylphosphoryl group.

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