Substrate support member, method for manufacturing the same, substrate processing device, and method for manufacturing articles

Abstract

To provide a substrate support member capable of shortening processing time when being manufactured.SOLUTION: A substrate support member for supporting a substrate comprises: a plurality of convex portions for supporting the substrate; and a seal portion for forming a reduced-pressure space on the side of the plurality of convex portions of the substrate. The height of the seal portion is lower than that of the plurality of convex portions. Each of the plurality of convex portions has a film at an upper end portion thereof. The seal portion has no film at the upper end portion thereof or has a film thinner than the film of the plurality of convex portions.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a substrate support member, a method for manufacturing a substrate support member, a substrate processing apparatus, and a method for manufacturing an article. [Background technology]

[0002] 2. Description of the Related Art In manufacturing processes for semiconductor devices, liquid crystal display devices, and the like, a substrate holding device is sometimes used that includes a substrate support member having a plurality of protrusions for supporting a substrate and a sealing edge portion (sealing portion).

[0003] It is preferable that the substrate holding device holds the substrate by the substrate support member in a state in which a decrease in the flatness of the substrate is suppressed. Patent Document 1 discloses a substrate holding device capable of holding the substrate in a state in which a decrease in the flatness of the substrate is suppressed by making the upper surface of the sealing portion lower than the upper surfaces of the multiple protrusions. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2001-185607 A Summary of the Invention [Problem to be solved by the invention]

[0005] Here, if a processing method with high surface accuracy such as ion beam processing is used to make the upper surface of the sealing portion lower than the upper surfaces of the multiple protrusions, the processing takes a long time.

[0006] SUMMARY OF THE PRESENT EMBODIMENT An object of the present invention is to provide a substrate support member capable of shortening the processing time required for manufacturing the substrate support member. [Means for solving the problem]

[0007] A substrate support member for supporting a substrate, comprising: a plurality of convex portions for supporting the substrate; and a sealing portion for forming a reduced pressure space on the side of the substrate facing the plurality of convex portions, wherein the height of the sealing portion is lower than the height of the plurality of convex portions, the plurality of convex portions each have a film at an upper end thereof, and the sealing portion does not have a film at an upper end thereof or has a film thinner than the film possessed by the plurality of convex portions.

[0008] Further objects or other aspects of the present invention will become apparent from the embodiments described below with reference to the drawings. Effect of the Invention

[0009] According to the present invention, it is possible to provide a substrate support member that can reduce the processing time required when manufacturing the substrate support member. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic view showing a configuration of a substrate processing apparatus in a first embodiment. [Diagram 2] FIG. 2 is a schematic plan view of a substrate support member in the first embodiment. [Diagram 3] 3 is a schematic cross-sectional view of a substrate support member in the first embodiment. FIG. [Figure 4] 13 is an example of another configuration of the substrate support member. [Diagram 5] 4 is a flowchart of a method for manufacturing a substrate support member in the first embodiment. [Figure 6] 5A to 5C are schematic diagrams illustrating a method for manufacturing a substrate support member in the first embodiment. [Figure 7] 10 is a flowchart of a method for manufacturing a substrate support member in the second embodiment. [Figure 8] 7A to 7C are schematic diagrams illustrating a method for manufacturing a substrate support member according to the second embodiment. [Figure 9] 13 is a flowchart of a method for manufacturing a substrate support member in the third embodiment. [Figure 10]13A to 13C are schematic diagrams illustrating a method for manufacturing a substrate support member according to a third embodiment. [Figure 11] 13 is a flowchart of a method for manufacturing a substrate support member in the fourth embodiment. [Figure 12] 13A to 13C are schematic diagrams illustrating a method for manufacturing a substrate support member according to a fourth embodiment. [Figure 13] 13 is a flowchart of a method for manufacturing a substrate support member in the fifth embodiment. [Figure 14] 13A to 13C are schematic diagrams illustrating a method for manufacturing a substrate support member according to the fifth embodiment. [Figure 15] 13 is a flowchart of a method for manufacturing a substrate support member in the sixth embodiment. [Figure 16] 13 is a flowchart of a method for manufacturing an article in a seventh embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that the following embodiment does not limit the invention according to the claims. Although the embodiment describes a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0012] In addition, in this specification and drawings, directions are basically indicated by an XYZ coordinate system in which the vertical direction is the Z axis and the horizontal plane perpendicular to the vertical direction is the XY plane, and the axes are mutually orthogonal. However, if an XYZ coordinate system is shown in each drawing, that coordinate system takes precedence.

[0013] A specific configuration will be described below for each embodiment.

[0014] First Embodiment FIG. 1 is a schematic diagram showing the configuration of a substrate processing apparatus 1 in this embodiment. In this embodiment, the substrate processing apparatus 1 is a projection exposure apparatus that exposes a pattern of an original (mask, reticle) onto a substrate via a projection optical system by a step-and-repeat method or a step-and-scan method. However, the substrate processing apparatus 1 is not limited to a projection exposure apparatus. For example, the substrate processing apparatus 1 may be a drawing apparatus that draws on a substrate using an electron beam or an ion beam, etc., to form a pattern on the substrate. The substrate processing apparatus 1 may also be another lithography apparatus (substrate exposure apparatus), for example, an imprint apparatus that forms a pattern on the substrate by molding an imprint material on the substrate using a mold. Alternatively, the substrate processing apparatus 1 may be another apparatus for processing a substrate such as a semiconductor wafer or a glass plate, such as an ion implantation apparatus, a development apparatus, an etching apparatus, a film formation apparatus, an annealing apparatus, a sputtering apparatus, or a deposition apparatus. The substrate processing apparatus 1 may also be a planarization apparatus that planarizes a composition on a substrate using a flat plate.

[0015] The substrate processing apparatus 1 includes an illumination optical system 11 that irradiates light, a reticle stage (not shown) that holds a reticle 12, a projection optical system 13, a control unit 14, and a substrate holding device 100 that is movable while holding a substrate 2. The substrate holding device 100 also includes a substrate support member (substrate chuck) 110 that supports a substrate, and a stage 120 on which the substrate support member 110 is placed and that is movable in the XY directions. Here, the substrate support member 110 may be fixed to the stage 120 by being attracted and held to the stage 120 by reducing the pressure of the space between the substrate support member 110 and the stage 120. Alternatively, the substrate support member 110 may be fixed to the stage 120 by a jig or the like.

[0016] The reticle 12 is an original plate in which a pattern to be transferred (for example, a circuit pattern) is formed on the surface of quartz glass with chrome, for example. The substrate 2 is, for example, single crystal silicon, and when the substrate processing apparatus 1 is an exposure apparatus, the substrate 2 transported to the substrate processing apparatus 1 has a photosensitive material (resist) applied on its surface. Here, the illumination optical system 11 is a pattern forming unit that forms a pattern on the substrate 2 supported by the substrate support member 110. Note that, in this embodiment, an example of a lithography apparatus that forms a pattern using light is shown, and the pattern forming unit is the illumination optical system 11, but it may be a lithography apparatus that uses heat to harden a thermosetting material to which a pattern has been transferred. In that case, the pattern forming unit is, for example, a heating unit that heats the thermosetting material. The control unit 14 controls each part in the substrate processing apparatus 1.

[0017] In the substrate processing apparatus 1, exposure light from a light source (not shown) illuminates a reticle 12 held on a reticle stage via an illumination optical system 11. The light transmitted through the reticle 12 is irradiated onto the substrate 2 via a projection optical system 13. At this time, the substrate 2 is vacuum-adsorbed to the substrate support member 110 by reducing the pressure in the space between the substrate 2 and the substrate support member 110. At this time, light from a pattern formed on the reticle 12 forms an image on the surface of the substrate 2, and the substrate 2 (photosensitive material) is exposed to the pattern image. The substrate processing apparatus 1 exposes the shot area on the substrate 2 in this manner, and performs similar exposure on each of the multiple shot areas.

[0018] 2 is a schematic plan view of a substrate support member 110 in this embodiment. The substrate support member 110 is provided with a plurality of protrusions 111 capable of supporting a substrate 2, suction holes 112, a seal portion (sealing edge wall portion) 113, and lift pin holes 114. The substrate support member 110 includes at least one material selected from the group consisting of silicon carbide (SiC), alumina ceramics, titanium oxide ceramics, cordierite, zirconia ceramics, silicon nitride ceramics, sialon, low expansion coefficient materials, sintered materials, quartz (SiO2), and glass ceramics.

[0019] The suction holes 112 and the lift pin holes 114 are through holes penetrating the substrate support member 110. The gas in the space between the substrate 2 and the substrate support member 110 is sucked through the suction holes 112 to reduce the pressure in the space between the substrate 2 and the substrate support member 110, and the substrate 2 is suction-held on the substrate support member 110. The lift pin holes 114 are holes through which lift pins (not shown) that can be driven to move up and down move up and down, and the lift pins protrude in the +Z direction from the upper surfaces of the multiple protrusions 111 to transfer the substrate 2 from the substrate support member 110. When the lift pins are positioned in the +Z direction from the upper surface of the substrate support member 110 while holding the substrate 2, the lift pins move in the -Z direction from the upper surfaces of the multiple protrusions 111 to transfer the substrate 2 to the substrate support member 110. The lift pins may be configured to be capable of suction-holding the substrate 2, and may have a hollow structure inside, for example, and this hollow structure is connected to a pressure adjustment unit (not shown). The pressure adjustment unit reduces the pressure in the space between the upper surface of the lift pin and the substrate 2, allowing the lift pin to adsorb and hold the substrate 2.

[0020] The substrate support member 110 also has a seal portion 113 for forming a reduced pressure space on the side of the plurality of convex portions of the substrate 2. The seal portion 113 shown in FIG. 2 includes a seal portion (first seal portion) formed along the outer periphery of the surface of the substrate support member 110 on the substrate support side, and a seal portion (second seal portion) formed along the outer periphery of the lift pin hole 114. That is, the second seal portion is a seal portion provided closer to the center of the substrate support member 110 than the first seal portion. When the gas in the space between the substrate 2 and the substrate support member 110 is sucked through the suction hole 112 with the substrate 2 placed on the plurality of convex portions 111, the pressure in the closed space formed by the substrate 2 and the seal portion 113 becomes lower than atmospheric pressure. As a result, the substrate 2 is sucked and held on the substrate support member 110 while being supported by the plurality of convex portions 111. Here, the seal portion 113 and the substrate 2 do not need to be in complete contact with each other, and there may be a gap between them. Even if the seal portion 113 and the substrate 2 are not in close contact with each other and there is a gap between them, it is sufficient that the pressure of the pseudo-closed space formed by the substrate 2 and the seal portion 113 can be made lower than atmospheric pressure by sucking gas from the suction holes 112. This allows the substrate 2 to be adsorbed and held on the substrate support member 110 even if the seal portion 113 and the substrate 2 are not in close contact with each other and there is a gap between them. In this embodiment, an example in which the seal portion 113 has an annular shape with a constant width is shown, but the shape of the seal portion 113 is not limited to this example. For example, the seal portion 113 may be an annular shape with a non-constant width, or may be a shape in which a plurality of cylindrical structures (sealing elements) are arranged in continuous contact or at intervals. In other words, it is sufficient that the seal portion 113 has a structure that allows the substrate 2 and the seal portion 113 to form a pseudo-closed space for adsorbing and holding the substrate 2 on the substrate support member 110. When a plurality of cylindrical structures are arranged, the maximum distance between the cylindrical structures is set to a length equal to or less than the diameter of the cylinder. Here, the pseudo-closed space in this embodiment refers to a space that is similar to a closed space even if it is not a completely sealed space. Specifically, it is a space that is sealed to the extent that the substrate holding device 100 can hold the substrate 2 by reducing the pressure between the substrate 2 and the substrate support member 110.

[0021] Here, it is preferable that the substrate support member 110 supports the substrate 2 without reducing the flatness of the substrate 2. This is because it is possible to suppress a decrease in the accuracy of the substrate processing performed in a state where the substrate support member 110 supports the substrate 2. However, if the substrate 2 is supported and adsorbed by the substrate support member 110 in a state where a foreign object is present on the upper surface of the seal portion 113, the substrate 2 is supported and adsorbed by the substrate support member 110 in a state where the foreign object is sandwiched, and the flatness of the substrate 2 is reduced. In addition, when the substrate support member 110 supports and adsorbs the substrate 2, the pressure in the closed space formed by the substrate 2 and the seal portion 113 changes suddenly, and the substrate 2 may be pressed against the substrate support member 110 and held (supported) in a locally distorted state. In such a case, the distortion of the substrate 2 may become large, especially in the vicinity of the seal portion 113. As a method for reducing the distortion of the substrate 2 when the substrate support member 110 supports and adsorbs the substrate 2, a method of making the upper surface of the seal portion 113 lower than the upper surfaces of the multiple protrusions 111 can be mentioned. In order to make the upper surface of the seal portion 113 lower than the upper surfaces of the plurality of protrusions 111, there is a method of processing the seal portion 113 by, for example, ion beam processing. However, if the seal portion 113 of the substrate support member 110 is cut by ion beam processing, it takes a long time to process because the substrate support member 110 is made of a hard material as described above. In addition, since the substrate support member 110 supports a plurality of substrates one after another, it may gradually wear out due to contact with the substrates. This wear reduces the flatness when supporting the substrates. Therefore, it is preferable to reduce the wear of the substrate support member 110.

[0022] Therefore, the substrate support member 110 (substrate holding device 100) of this embodiment is characterized in that it is possible to simultaneously shorten the processing time when the substrate support member 110 is manufactured and reduce wear of the substrate support member 110.

[0023] FIG. 3 is a schematic diagram of a cross section of the substrate support member 110 in this embodiment. Note that FIG. 3 shows the cross section A-A' in FIG. 2. In FIG. 3, the heights of the seal portion 113 and each of the multiple protrusions 111 except for the film 300 (the upper surface on which the film 300 is formed) are the same. In the substrate support member 110 of this embodiment, as shown in FIG. 3(a), the height of the upper surface of the seal portion 113 (the upper surface of the film 300 when the film 300 is provided at the upper end of the seal portion 113) is lower than the height of the upper surface of the film 300 provided at the upper end of the multiple protrusions 111. FIG. 3(b) is a diagram showing the substrate support member 110 holding (supporting) the substrate 2. Note that FIG. 3 is an example in which the film 300 is provided only on the multiple protrusions 111 and the film 300 is not provided on the seal portion 113. Moreover, the film 300 includes at least one material selected from the group consisting of carbide, nitride, oxide, boride, silicon carbide (SiC), titanium nitride (TiN), boron carbide (B4C), diamond-like carbon (DLC), diamond, silicon oxide, and alumina. The hardness of the film 300 may be determined in consideration of the slipperiness of the substrate 2 on the upper surface of the substrate support member 110 and the wear resistance of the substrate support member 110. For example, if slipperiness is prioritized, a relatively soft film may be used, and if wear resistance is prioritized, a relatively hard film may be used.

[0024] The difference in height between the seal portion 113 and the plurality of convex portions 111 is the difference between the thickness of the film 300 provided on the upper surface of the seal portion 113 and the thickness of the film 300 provided on the upper surface of the plurality of convex portions 111 when the film 300 is provided on the seal portion 113. The difference in height between the seal portion 113 and the plurality of convex portions 111 is the thickness of the film 300 provided on the upper surface of the plurality of convex portions 111 when the film 300 is not provided on the seal portion 113. In other words, in the substrate support member 110 of this embodiment, the height of the seal portion 113 is lower than the height of the plurality of convex portions 111, and the plurality of convex portions 111 have the film 300 at their respective upper ends. The seal portion 113 does not have the film 300 at the upper end of the seal portion 113, or has a film 300 that is thinner than the film 300 of the plurality of convex portions 111.

[0025] According to this embodiment, even when the sealing portion 113 is not processed by ion beam processing or the like, that is, when the sealing portion 113 and the plurality of protruding portions 111 have the same height, the upper surface of the sealing portion 113 can be made lower than the upper surfaces of the plurality of protruding portions 111. This can be achieved by the presence or absence of the film 300 or by the difference in thickness of the film 300 at each portion (position) of the substrate support member 110.

[0026] As described above, by making the upper surface of the seal portion 113 lower than the upper surfaces of the plurality of protrusions 111, it is possible to reduce distortion of the substrate 2 when the substrate 2 supported by the substrate support member 110 is adsorbed and held. As a result, according to this embodiment, it is possible to reduce distortion of the substrate 2 when the substrate 2 is adsorbed and held. Furthermore, when the upper surface of the seal portion 113 is lower than the upper surfaces of the plurality of protrusions 111, the plurality of protrusions 111 mainly come into contact with the substrate 2. Here, since the upper end of the plurality of protrusions 111 of this embodiment is provided with the film 300 containing the material described above, it is possible to reduce wear of the substrate support member 110. Furthermore, since the film thickness during film formation can be controlled with an accuracy of several tens of nm, it is possible to adjust the height difference between the upper surface of the seal portion 113 and the upper surfaces of the plurality of protrusions 111 with high accuracy.

[0027] Next, another example of the configuration of the substrate support member 110 will be described. Fig. 4 is a plan view showing another example of the configuration of the substrate support member 110. Fig. 4(a) shows an example in which a plurality of protrusions 111 are also provided on the outside of the seal portion 113 provided along the outer periphery of the substrate support member 110. By providing a plurality of protrusions 111 on the outside of the seal portion 113 provided along the outer periphery of the substrate support member 110, deformation of the end of the substrate 2 in the -Z direction can be suppressed, and flatness when the substrate 2 is adsorbed and held is improved.

[0028] The substrate support member 110 shown in FIG. 4(b) is provided with an outer ring-shaped seal portion 113 provided along the outer periphery of the substrate support member 110, and an inner ring-shaped seal portion 113 having a smaller diameter than the outer ring-shaped seal portion 113. In addition, three radial seal portions 113 extending radially from the center of the substrate support member 110 are provided so as to divide the substrate support member 110 by 120 degrees each. The two ring-shaped seal portions and the three radial seal portions divide the inside of the outer ring-shaped seal portion 113 into six regions. A plurality of protrusions 111 are also provided on the outside of the provided outer ring-shaped seal portion 113. The substrate support member 110 has suction holes 112 in each of the six divided regions, and gas can be exhausted in each region. The configuration of the substrate support member 110 is not limited to the examples of FIG. 2 and FIG. 4, and the arrangement and number of the seal portion 113, the plurality of protrusions 111, and the suction holes 112 are not particularly limited.

[0029] Fig. 5 is a flow chart of a method for manufacturing the substrate support member 110 in this embodiment. Fig. 6 is a schematic diagram of the method for manufacturing the substrate support member 110 in this embodiment. Fig. 6 is a schematic diagram of a cross section of the substrate support member 110, and shows an enlarged schematic diagram of a plurality of protrusions 111 and a seal portion 113 on the right side. The method for manufacturing the substrate support member 110 in this embodiment will be described with reference to Figs. 5 and 6.

[0030] FIG. 6(a) is a schematic diagram of a substrate support member 110 provided with a seal portion 113, a plurality of protrusions 111, an adsorption hole 112, and a lift pin hole 114. The upper end surface of the seal portion 113 and the upper end surfaces of the plurality of protrusions 111 are subjected to flattening processing or the like, and the upper surfaces (upper end surfaces) of the plurality of protrusions 111 and the upper surface (upper end surface) of the seal portion 113 are on the same plane. In this embodiment, being on the same plane includes cases where there is or is not an error in processing. This error is allowed only by an amount smaller than the difference in height between the upper surfaces of the plurality of protrusions 111 and the upper surface of the seal portion 113 (the difference in film thickness of the film 300). More preferably, this error is allowed only by an amount equal to or less than half the difference in height between the upper surfaces of the plurality of protrusions 111 and the upper surface of the seal portion 113 (the difference in film thickness of the film 300).

[0031] The substrate support member 110 of FIG. 6(a) is prepared, and the mask 500 is placed on the seal portion 113 as shown in FIG. 6(b) (mask placement step, step S110). The mask 500 may be liquid or solid. An example of a liquid mask is a volatile liquid containing a dye or pigment, such as an oil-based marker or a resist pen. This volatile liquid evaporates, and the dye or pigment remains. This remaining dye or pigment becomes the mask. Examples of solid masks are resin, metal, a sheet with an adhesive surface, ceramics, etc. The solid mask is placed on the upper surface at a position where the film 300 is not provided, by placing it on the upper surface, or by fixing it with tape or a jig.

[0032] 6(c), a film 300 is formed (film formation process, step S120). In the film formation process, the film 300 is provided at least on the upper ends of the multiple protrusions 111 that support the substrate 2 provided on the substrate support member 110. The thickness of the film 300 to be formed is determined according to the desired sealability. When the sealability of the seal portion 113 is higher than a predetermined sealability, the height difference between the upper surfaces of the multiple protrusions 111 and the upper surface of the seal portion 113 (thickness difference of the film 300) is smaller than when the sealability of the seal portion 113 is lower than the predetermined sealability.

[0033] The film forming apparatus used for film formation is, for example, a high-frequency plasma CVD (chemical vapor deposition) apparatus, an ion plating apparatus, or a sputtering apparatus. Note that, in order to improve the adhesion of the film 300 to positions where the film 300 is not removed (positions where the film 300 remains even after the film removal process), an adhesion layer (film) may be formed before the film 300 is formed. By providing an adhesion layer below the film 300, the adhesion between the film 300 and the multiple protrusions 111 or the seal portion 113 is improved. The adhesion layer is a layer containing carbon, silicon, oxygen, and hydrogen. This adhesion layer is preferably about several nm thick.

[0034] Next, the mask 500 is removed as shown in FIG. 6(d) (mask removing step, film removing step, step S130). When a liquid mask is used as the mask 500, the mask 500 can be removed by cleaning the substrate support member 110 with an organic solvent or a cleaning agent. By removing the liquid mask 500, the film 300 formed on the mask can be removed. When a solid mask is used as the mask 500, the film 300 formed on the mask can be removed by removing the solid mask 500. When the substrate support member 110 is manufactured by the above-mentioned method, the height of the upper surface of the seal portion 113 is lower than the height of the upper surfaces of the multiple convex portions 111 by the thickness of the formed film 300. That is, when the thickness of the film 300 is 20 nm to 1 μm, the height of the upper surface of the seal portion 113 is lower than the height of the upper surfaces of the multiple convex portions 111 by 20 nm to 1 μm. As described above, the substrate support member 110 of this embodiment can be manufactured by the method shown in FIG. 6. In this embodiment, the mask 500 is placed on all the seal portions 113, and the film 300 formed on the mask 500 on the seal portions 113 is removed. However, depending on the shape of the substrate support member 110 and the characteristics of the substrate 2 to be supported, the mask 500 may be placed on only some of the seal portions 113 rather than on all of the seal portions. That is, the film 300 may be left unremoved and formed on some of the seal portions 113, and the film 300 may be removed on the other seal portions 113, and the film 300 may be provided on the upper end surfaces of both the seal portions 113 and the multiple protruding portions 111.

[0035] As described above, in the film removal process, a part of the film 300 formed in the film formation process is removed. Then, after the film removal process, the height of the upper end surface of the sealing portion 113 that does not have the film 300 at its upper end is lower than the height of the upper end surfaces of the multiple protrusions 111.

[0036] In this embodiment, the manufacturing method for substrate support member 110 has been described, but the manufacturing method of this embodiment can be applied to a member having sealing portion 113 and multiple protrusions 111. For example, it can also be applied to a substrate transport hand that transports a silicon wafer or a glass wafer, which is a substrate, and a reticle chuck that suction-holds a reticle.

[0037] <Second embodiment> This embodiment differs from the first embodiment in the method of removing the film 300. In this embodiment, a mask 500 is not placed on the sealing portion 113, and when removing the film 300 formed on the sealing portion 113, a member is placed on the upper end of the film 300 so as to cover positions (positions where the multiple protrusions 111 are present) where the film 300 is not to be removed.

[0038] Fig. 7 is a flowchart of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 8 is a schematic diagram of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 8 is a schematic diagram of a cross section of the substrate support member 110, and shows an enlarged schematic diagram of a plurality of protrusions 111 and a seal portion 113 on the right side. The method for manufacturing the substrate support member 110 in this embodiment will be described with reference to Figs. 7 and 8.

[0039] 8(a) is a schematic diagram of a substrate support member 110 provided with a seal portion 113, multiple protrusions 111, suction holes 112, and lift pin holes 114. The upper end surface of the seal portion 113 and the upper end surfaces of the multiple protrusions 111 have been subjected to flattening processing or the like, and the upper surfaces (upper end surfaces) of the multiple protrusions 111 and the upper surface (upper end surface) of the seal portion 113 are at the same height. Note that "the same height" in this embodiment includes cases where there is or is not an error in processing.

[0040] A substrate support member 110 as shown in Fig. 8(a) is prepared, and a film 300 is formed on the entire upper surface of the substrate support member 110 as shown in Fig. 8(b) (film formation process, step S210). Note that, in order to improve the adhesion of the film 300 to the portion where the film 300 is not removed in the subsequent process, an adhesion layer may be formed before the film 300 is formed. The adhesion layer is a layer containing carbon, silicon, oxygen, and hydrogen. This adhesion layer is preferably about several nm thick.

[0041] 8(c), a member 501 is placed on the upper ends of the multiple protrusions 111 on which the film 300 has been formed so as to cover them (member placement step, step S220). In this embodiment, the film 300 in the positions not covered by the member 501 is removed by oxygen plasma ashing, so the member 501 is preferably made of a material that is not easily decomposed by oxygen plasma ashing. For example, the member 501 is made of ceramics or a heat-resistant resin such as PEEK (polyether ether ketone resin).

[0042] Next, as shown in FIG. 8(d), oxygen plasma ashing is performed with the member 501 in place to remove the film 300 in a position not covered by the member 501 (film removal step, step S230). The oxygen plasma ashing may be performed, for example, by supplying oxygen to the plasma CVD film formation apparatus used to form the film 300. Also, instead of oxygen plasma ashing, the film 300 may be removed by argon ion etching. The argon ion etching may also be performed in a plasma CVD apparatus. Next, the member 501 is removed as shown in FIG. 8(e) (member removal step, S240). The substrate support member 110 of this embodiment is manufactured by the method described above.

[0043] Here, in this embodiment, the removal of the film 300 is performed by oxygen plasma ashing or argon ion etching, so that the thickness of the film 300 to be removed can be controlled. In this embodiment, as in the first embodiment, an example will be described in which the upper end surface of the seal portion 113 is about 20 nm to 1 μm lower than the upper end surfaces of the multiple protrusions 111 in order to reduce distortion of the substrate 2. Therefore, in this embodiment, the amount of the film 300 to be removed may be arbitrarily determined so as to fall within this range. For example, the film 300 may be deposited to a thickness of 1.1 μm during film formation. In this case, the time for performing the oxygen plasma ashing may be adjusted so that the film 300 of the seal portion 113 is removed by the oxygen plasma ashing to a thickness of 20 nm to 1 μm. In this example, the film 300 having a thickness of 100 nm to 1.08 μm remains at the upper end of the seal portion 113.

[0044] According to this embodiment, the amount of film 300 removed (the thickness of film 300 to be removed) at the upper end of seal portion 113 can be set to any amount. Therefore, it is possible to adjust the height of the upper surface of film 300 provided on the upper end surface of seal portion 113 relative to the upper surface of film 300 provided on the upper end surfaces of the multiple protrusions 111 (adjust the height difference) within the range of the amount of film 300 that can be removed.

[0045] <Third embodiment> This embodiment is an application of the first embodiment, and is characterized in that the film 300 is formed multiple times.

[0046] Fig. 9 is a flowchart of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 10 is a schematic diagram of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 10 is a schematic diagram of a cross section of the substrate support member 110, and shows an enlarged schematic diagram of a plurality of protrusions 111 and a seal portion 113 on the right side. The method for manufacturing the substrate support member 110 in this embodiment will be described with reference to Figs. 9 and 10.

[0047] 5 and 6 of the first embodiment, the substrate support member 110 has no film 300 on the upper end of the seal portion 113, and has the film 300 on a portion other than the seal portion 113. Here, steps S310 to S330 in FIG. 9 are similar to steps S110 to S130 in FIG.

[0048] The substrate support member 110 shown in FIG. 10(a) is prepared, and the mask 500 is placed on the seal portion 113a as shown in FIG. 10(b) (mask placement step, step S340).

[0049] Next, as shown in FIG. 10(c), the film 300 is formed (film forming process, step S350). The thickness of the film 300 to be formed is determined according to the desired sealing property. As in the first embodiment, an adhesion layer may be formed before forming the film 300 in order to improve the adhesion of the film 300 to the portion where the film 300 is not removed. The adhesion layer is a layer containing carbon, silicon, oxygen, and hydrogen. This adhesion layer is preferably several nm thick. In this embodiment, for example, such an adhesion layer may be formed on the seal portion 113b and the upper end portions of the multiple protrusions 111.

[0050] Next, as shown in Fig. 10(d), the mask 500 on the seal portion 113a is removed (mask removing step, film removing step, step S360). In the method for manufacturing the substrate support member 110 shown in Fig. 9 and Fig. 10, such film forming steps and film removing steps are repeated alternately. This makes it possible to manufacture the substrate support member 110 having a portion on the substrate support member 110 without the film 300, such as the seal portion 113a, and a portion on the substrate support member 110 with the film 300 thinner than the film 300 at the upper ends of the multiple protrusions 111, such as the seal portion 113b.

[0051] Therefore, by the manufacturing method of this embodiment, it is possible to manufacture a substrate support member 110 in which there is no film 300 at the upper end of the seal portion 113a, there is one stage of the film 300 at the upper end of the seal portion 113b, and there are two stages of the film 300 at the upper ends of the multiple protrusions 111. Here, the number of stages of the film 300 indicates the film thickness of the film 300. When the film 300 has zero stages, it means that there is no film 300, and when the film 300 has one stage, the film 300 is provided but the film thickness of the film 300 is thinner than when the film 300 has two stages. In this embodiment, a film 300 having two or more stages is called a multilayer film.

[0052] Although an example has been shown in which all of the film 300 in the sealing portion 113a is removed (reduced to 0 stages), the opposite may be true, for example, as shown in FIG. 10(e), in which all of the film 300 in the sealing portion 113b is removed (reduced to 0 stages) and the sealing portion 113a has one stage of the film 300.

[0053] In addition, in the present embodiment, an example in which the film 300 of some of the sealing parts is entirely removed (to make it 0th stage) has been shown, but the film 300 may be provided on the upper surface of all of the sealing parts 113. Specifically, the presence or absence of the film 300 or the thickness of the film 300 can be set arbitrarily for each sealing part 113 so that the height of the sealing part 113 having the film 300 at its upper end is lower than the height of the multiple convex parts 111 having the film 300 at its upper end. Furthermore, in the present embodiment, an example in which the film 300 is provided with three levels of film thickness (0th stage, 1st stage, 2nd stage) has been shown, but it does not have to be three stages and may be determined arbitrarily. For example, when the sealing parts 113 are provided at three separate locations, the presence or absence of the film 300 or the film thickness of the film 300 may be changed for each of the three sealing parts 113 and the multiple convex parts 111, so that the heights of the upper end surfaces may be made different from each other. In this case, the substrate support member 110 having four levels of film thickness for the film 300 (which may include the case of 0th stage where there is no film 300) can be manufactured.

[0054] <Fourth embodiment> This embodiment differs from the third embodiment in the method of removing the film 300.

[0055] Fig. 11 is a flowchart of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 12 is a schematic diagram of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 12 is a schematic diagram of a cross section of the substrate support member 110, and shows an enlarged schematic diagram of a plurality of protrusions 111 and a seal portion 113 on the right side. The method for manufacturing the substrate support member 110 in this embodiment will be described with reference to Figs. 11 and 12.

[0056] 12(a) shows a substrate support member 110 in which the film 300 formed on the sealing portion 113 by the method shown in Fig. 7 and Fig. 8 of the second embodiment has been removed, and the film 300 has been formed on the portion other than the sealing portion 113. Here, steps S410 to S440 in Fig. 11 correspond to steps S210 to S240 in Fig. 7, respectively.

[0057] As shown in FIG. 12(b), a film 300 is formed on the substrate support member 110 on which the film 300 is formed except on the sealing portion 113 (film forming step, step S450).

[0058] 12(c), a member 501 is placed on the upper ends of the plurality of protrusions 111 and the sealing portion 113b so as to cover them (member placement step, step S460). In this embodiment, the film 300 formed on the sealing portion 113a that is not covered by the member 501 is removed by oxygen plasma ashing, so the member 501 is preferably made of a material that is not easily decomposed by oxygen plasma ashing.

[0059] Next, as shown in Fig. 12(d), oxygen plasma ashing is performed with the member 501 in place to remove the film 300 formed on the sealing portion 113a that is not covered by the member 501 (film removal step, step S470). Then, as shown in Fig. 12(e), the member 501 is removed (member removal step, S480). In this manner, the method for manufacturing the substrate support member 110 shown in Figs. 11 and 12 alternately repeats the film formation step and the film removal step.

[0060] In this embodiment, the type, arrangement, and removal time of the member 501 may be determined so that the film 300 has a set thickness. When the film is formed multiple times, the amount of the film 300 formed each time may be changed so that the desired film thickness is obtained each time. For example, a 100 nm film may be formed in the first film formation, and a 150 nm film may be formed in the second film formation. In this embodiment, the film 300 is removed by oxygen plasma ashing, but the film 300 may be removed by argon ion etching instead of oxygen plasma ashing.

[0061] The manufacturing method of this embodiment makes it possible to manufacture a substrate support member 110 in which there is no film 300 at the upper end of the seal portion 113a, there is one stage of film 300 at the upper end of the seal portion 113b, and there are two stages of film 300 (multilayer film) at the upper ends of the multiple protrusions 111. In other words, a desired height difference of three or more stages can be realized on the substrate support member 110.

[0062] In addition, in the present embodiment, an example in which the film 300 of some of the sealing parts is entirely removed (to make it 0th stage) has been shown, but the film 300 may be provided on the upper surface of all of the sealing parts 113. Specifically, the presence or absence of the film 300 or the thickness of the film 300 can be set arbitrarily for each sealing part 113 so that the height of the sealing part 113 having the film 300 at its upper end is lower than the height of the multiple convex parts 111 having the film 300 at its upper end. Furthermore, in the present embodiment, an example in which the film 300 is provided with three levels of film thickness (0th stage, 1st stage, 2nd stage) has been shown, but it does not have to be three stages and may be determined arbitrarily. For example, when the sealing parts 113 are provided at three separate locations, the presence or absence of the film 300 or the film thickness of the film 300 may be changed for each of the three sealing parts 113 and the multiple convex parts 111, so that the heights of the upper end surfaces may be made different from each other. In this case, the substrate support member 110 having four levels of film thickness for the film 300 (which may include the case of 0th stage where there is no film 300) can be manufactured.

[0063] <Fifth embodiment> This embodiment differs from the fourth embodiment in the number of film forming steps.

[0064] Fig. 13 is a flowchart of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 14 is a schematic diagram of a method for manufacturing a substrate support member 110 in this embodiment. Fig. 14 is a schematic diagram of a cross section of the substrate support member 110, and shows an enlarged schematic diagram of a plurality of protrusions 111 and a seal portion 113 on the right side. The method for manufacturing the substrate support member 110 in this embodiment will be described with reference to Figs. 13 and 14.

[0065] First, as shown in FIG. 14(a), a film 300 is formed (film formation process, step S510). The thickness of the film 300 formed in step S510 is set to be thicker than the thickness of a single film formed in the manufacturing method shown in FIG. 11 and FIG. 12. As in the first embodiment, an adhesion layer may be formed before forming the film 300 in order to improve adhesion in positions where the film 300 is not removed. The adhesion layer is a layer containing carbon, silicon, oxygen, and hydrogen. This adhesion layer is preferably about several nm thick.

[0066] 14(b), a member 501 is placed on the upper ends of the plurality of protrusions 111 and the sealing portion 113b so as to cover them (member placement step, step S520). In this embodiment, the film 300 formed on the sealing portion 113a that is not covered by the member 501 is removed by oxygen plasma ashing, so the member 501 is preferably made of a material that is not easily decomposed by oxygen plasma ashing.

[0067] Next, as shown in FIG. 14(c), oxygen plasma ashing is performed with the member 501 in place to remove the film 300 formed on the sealing portion 113a that is not covered by the member 501 (film removing step, step S530).

[0068] 14(d), member 511 is placed on the upper ends of the multiple protrusions 111 so as to cover them (member placement step, step S540). While member 501 is a member that covers the multiple protrusions 111 and seal portion 113b, member 511 covers only the multiple protrusions 111. In this embodiment, since film 300 formed on seal portion 113a and seal portion 113b that is not covered by member 511 is removed by oxygen plasma ashing, member 511 is preferably made of a material that is not easily decomposed by oxygen plasma ashing.

[0069] 14(e), oxygen plasma ashing is performed with the member 511 in place to remove the film 300 formed on the sealing portion 113a and the sealing portion 113b that are not covered by the member 511 (film removing step, step S550). Then, the member 511 is removed as shown in FIG. 14(f) (member removing step, S560).

[0070] According to this embodiment, a desired height difference of three or more steps can be achieved on the substrate support member 110 by performing the film formation process fewer times than in the fourth embodiment.

[0071] Sixth Embodiment The present embodiment differs from the first to fifth embodiments in the method of adjusting the height of the upper end surface of the seal portion 113. In the present embodiment, processing of the seal portion 113 before film formation by ion beam processing or the like is used in combination with the formation of the film 300, so that the height of the upper end surface of the seal portion 113 is made lower than the height of the upper end surfaces of the multiple protrusions 111.

[0072] Fig. 15 is a flow chart of a method for manufacturing the substrate support member 110 in this embodiment. In Fig. 15, first, the seal portion 113 is processed by ion beam processing or the like (processing step, step S610). Next, a desired amount of film 300 is provided on the multiple protrusions 111 and the seal portion 113 by the method described in the first to fifth embodiments, and the height of the upper end surface of the seal portion 113 is made lower than the height of the upper end surfaces of the multiple protrusions 111 (film arrangement step, step S620). Note that in step S620, a mode in which the film 300 is not provided on the upper end surface of the seal portion 113 can also be implemented.

[0073] In the substrate support member 110 of this embodiment, each of the multiple protrusions 111 has a film 300 and a first protrusion having the film 300 provided at its upper end, and the sealing portion 113 has a second protrusion made of the same material as the first protrusion, and the height of the second protrusion is lower than the height of the first protrusion.

[0074] In the method for manufacturing the substrate support member 110 in this embodiment, the processing step performed before the film formation and the film arrangement step are combined, so that the time required for the step of repeatedly forming and removing the film 300 can be shortened.

[0075] Seventh embodiment This embodiment is characterized in that an article is manufactured using the substrate support member 110 described above.

[0076] FIG. 16 is a flowchart of a method for manufacturing an article in this embodiment.

[0077] A supporting step S710 is performed in which the substrate 2 is supported by the substrate support member 110, and a forming step S720 is performed in which a pattern is formed on the substrate 2 supported in the supporting step S710. Next, a manufacturing step S730 is performed in which an article is manufactured from the substrate 2 on which the pattern is formed in the forming step S720. Here, the substrate support member 110 used in the supporting step S710 has a plurality of convex parts 111 for supporting the substrate 2, and a sealing part 113 for forming a reduced pressure space on the side of the plurality of convex parts 111 of the substrate 2. The height of the sealing part 113 is lower than the height of the plurality of convex parts 111. This height difference occurs because the plurality of convex parts 111 have a film 300 at their respective upper ends, and the sealing part 113 does not have a film 300 at the upper end of the sealing part 113, or has a film 300 that is thinner than the film 300 of the plurality of convex parts 111.

[0078] Products manufactured by this manufacturing method include, for example, semiconductor IC elements, liquid crystal display elements, color filters, MEMS, and the like.

[0079] In the forming step, for example, a substrate (silicon wafer, glass plate, etc.) coated with a photosensitive material is exposed to light by an exposure apparatus (lithography apparatus) to form a pattern on the substrate.

[0080] The manufacturing process includes, for example, developing a substrate (photosensitive material) on which a pattern is formed, etching the developed substrate, removing the resist, dicing, bonding, and packaging. According to this manufacturing method, it is possible to manufacture products of higher quality than conventional methods.

[0081] The disclosure of the present specification includes the following substrate support member, method for manufacturing a substrate support member, substrate processing apparatus, and method for manufacturing an article.

[0082] [Item 1] A substrate support member for supporting a substrate, A plurality of protrusions for supporting the substrate; a seal portion for forming a reduced pressure space on the side of the plurality of protrusions of the substrate, The height of the sealing portion is lower than the height of the plurality of protrusions, each of the plurality of protrusions has a film on an upper end thereof; A substrate support member, wherein the sealing portion does not have a film on an upper end portion of the sealing portion, or has a film that is thinner than the films on the plurality of protrusions.

[0083] [Item 2] 2. The substrate support member according to item 1, wherein the film is provided on both the sealing portion and the plurality of protruding portions.

[0084] [Item 3] The substrate support member according to item 1 or 2, characterized in that the sealing portion has a sealing portion provided along an outer periphery of the substrate support member and a sealing portion provided along a through hole provided in the substrate support member.

[0085] [Item 4] the seal portion includes a first seal portion provided along an outer periphery of the substrate support member and a second seal portion provided closer to the center of the substrate support member than the first seal portion; The height of the first seal portion is lower than the height of the second seal portion, the second seal portion has a membrane at an upper end; The substrate support member according to any one of items 1 to 3, wherein the first seal portion does not have a film on an upper end portion of the first seal portion, or has a film that is thinner than the film of the second seal portion.

[0086] [Item 5] the seal portion includes a first seal portion provided along an outer periphery of the substrate support member and a second seal portion provided closer to the center of the substrate support member than the first seal portion; The height of the second seal portion is lower than the height of the first seal portion, the first seal portion has a membrane at an upper end; The substrate support member according to any one of items 1 to 3, wherein the second seal portion does not have a film on an upper end portion of the second seal portion, or has a film that is thinner than the film of the first seal portion.

[0087] [Item 6] When the sealability of the seal portion is higher than a predetermined sealability, the height difference between the upper surfaces of the plurality of protrusions and the upper surface of the seal portion is smaller than when the sealability of the seal portion is lower than the predetermined sealability. 6. The substrate support member according to any one of items 1 to 5, wherein:

[0088] [Item 7] The substrate support member according to any one of items 1 to 6, characterized in that the film contains at least one material selected from the group consisting of carbide, nitride, oxide, boride, silicon carbide (SiC), titanium nitride (TiN), boron carbide (B4C), diamond-like carbon (DLC), diamond, silicon oxide, and alumina.

[0089] [Item 8] each of the plurality of protrusions includes the film and a first protrusion having the film provided at an upper end thereof; the sealing portion has a second protrusion made of the same material as the first protrusion, 8. The substrate support member according to any one of items 1 to 7, wherein the height of the second protrusion is lower than the height of the first protrusion.

[0090] [Item 9] 9. The substrate support member according to any one of items 1 to 8, wherein a film for improving adhesion of the film is provided on the portion on which the film is to be provided.

[0091] [Item 10] The substrate support member according to any one of items 1 to 9, characterized in that the substrate support member contains at least one material selected from the group consisting of silicon carbide (SiC), alumina ceramics, titanium oxide ceramics, cordierite, zirconia ceramics, silicon nitride ceramics, sialon, low expansion coefficient materials, sintered materials, quartz (SiO2), and glass ceramics.

[0092] [Item 11] 1. A method for manufacturing a substrate support member, comprising: a film forming step of providing a film on a plurality of convex portions, or on the plurality of convex portions and the seal portion, of the substrate support member including a plurality of convex portions for supporting a substrate and a seal portion for forming a reduced pressure space on the side of the plurality of convex portions of the substrate; a film removing step of removing a part of the film provided on the substrate support member by the film forming step, a substrate support member manufacturing method comprising: forming, through the film formation process and the film removal process, a substrate support member that has no film on an upper end of the sealing portion, or has a film on the upper end of the sealing portion that is thinner than the film on the multiple convex portions, and the height of the sealing portion is lower than the height of the multiple convex portions.

[0093] [Item 12] Item 12. The method for manufacturing a substrate support member according to item 11, wherein the film removing step includes a step of removing the film on the mask by removing a mask used in the film forming step.

[0094] [Item 13] 13. The method for manufacturing a substrate support member according to item 11 or 12, wherein the film removal step includes a step of removing a part of the film provided on the substrate support member by oxygen plasma ashing or argon ion etching.

[0095] [Item 14] 14. The method for manufacturing a substrate support member according to any one of items 11 to 13, characterized in that a multilayer film is formed on the substrate support member by alternately repeating the film forming step and the film removing step.

[0096] [Item 15] 15. The method for manufacturing a substrate support member according to any one of items 11 to 14, characterized in that a processing step is performed before the film forming step, in which a height of an upper surface of the sealing portion is lowered below a height of the plurality of protrusions.

[0097] [Item 16] A substrate support member according to any one of items 1 to 10, A substrate processing apparatus for processing a substrate supported by the substrate support member.

[0098] [Item 17] a supporting step of supporting a substrate by a substrate supporting member; a forming step of forming a pattern on the substrate supported in the supporting step; A manufacturing method of an article, comprising: a manufacturing step of manufacturing an article from the substrate on which the pattern is formed in the forming step, The substrate support member used in the supporting step is A plurality of protrusions for supporting the substrate; a seal portion for forming a reduced pressure space on the side of the plurality of protrusions of the substrate, The height of the sealing portion is lower than the height of the plurality of protrusions, each of the plurality of protrusions has a film on an upper end thereof; The sealing portion does not have a film on an upper end portion of the sealing portion, or has a film thinner than the films on the plurality of protrusions. A method for producing an article comprising the steps of:

[0099] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

Claims

1. A substrate support member that supports a substrate, Multiple protrusions supporting the substrate, The substrate has a sealing portion for forming a reduced pressure space on the side of the substrate supported by the multiple protrusions when the multiple protrusions support the substrate, The aforementioned multiple protrusions each have a film at their upper end. The substrate support member is characterized in that the sealing portion does not have a film at the upper end of the sealing portion, or has a film that is thinner than the film on the plurality of protrusions.

2. The substrate support member according to claim 1, characterized in that the film is provided on both the sealing portion and the plurality of protrusions.

3. The substrate support member according to claim 1, characterized in that the sealing portion comprises a sealing portion provided along the outer circumference of the substrate support member and a sealing portion provided along a through hole provided in the substrate support member.

4. The sealing portion comprises a first sealing portion provided along the outer circumference of the substrate support member and a second sealing portion provided on the central side of the substrate support member relative to the first sealing portion. The second sealing portion has a film at its upper end, The substrate support member according to claim 1, characterized in that the first sealing portion does not have a film at the upper end of the first sealing portion, or has a film that is thinner than the film of the second sealing portion.

5. The sealing portion comprises a first sealing portion provided along the outer circumference of the substrate support member and a second sealing portion provided on the central side of the substrate support member relative to the first sealing portion. The first sealing portion has a film at its upper end, The substrate support member according to claim 1, characterized in that the second sealing portion does not have a film at the upper end of the second sealing portion, or has a film that is thinner than the film of the first sealing portion.

6. When the sealing performance of the sealing portion is higher than a predetermined sealing performance, the difference in height between the upper surfaces of the plurality of protrusions and the upper surface of the sealing portion is smaller than when the sealing performance of the sealing portion is lower than the predetermined sealing performance. The substrate support member according to feature 1.

7. The substrate support member according to claim 1, characterized in that the film contains at least one material from among carbides, nitrides, oxides, borides, silicon carbide (SiC), titanium nitride (TiN), boron carbide (B4C), diamond-like carbon (DLC), diamond, silicon oxide, and alumina.

8. Each of the aforementioned multiple protrusions has the film and a first protrusion on which the film is provided at its upper end. The sealing portion has a second protrusion made of the same material as the first protrusion, The substrate support member according to claim 1, characterized in that the height of the second protrusion is lower than the height of the first protrusion.

9. The substrate support member according to claim 1, characterized in that a film for improving the adhesion force of the film is provided in the portion where the film is provided.

10. The substrate support member according to claim 1, characterized in that the substrate support member contains at least one material selected from silicon carbide (SiC), alumina ceramics, titanium oxide ceramics, cordierite, zirconia ceramics, silicon nitride ceramics, sialon, low expansion coefficient material, sintered material, quartz (SiO2), and glass ceramics.

11. A method for manufacturing a substrate support member, A film forming step of forming a film on the plurality of protrusions, or on the plurality of protrusions and the seal portion, of a substrate support member having a plurality of protrusions for supporting the substrate and a seal portion for forming a reduced pressure space on the side of the substrate supported by the plurality of protrusions when the plurality of protrusions are supporting the substrate, The process includes a film removal step to remove a portion of the film provided on the substrate support member by the film formation step, A method for manufacturing a substrate support member, characterized by forming the substrate support member through the film formation step and the film removal step, wherein the upper end of the sealing portion does not have a film, or the upper end of the sealing portion has a film thinner than the film having the plurality of protrusions.

12. The method for manufacturing a substrate support member according to claim 11, characterized in that the film removal step includes a step of removing the film on the mask by removing the mask used in the film formation step.

13. The method for manufacturing a substrate support member according to claim 11, characterized in that the film removal step includes a step of removing a portion of the film provided on the substrate support member by oxygen plasma ashing or argon ion etching.

14. A method for manufacturing a substrate support member according to claim 11, characterized in that a multilayer film is formed on the substrate support member by alternately repeating the film formation step and the film removal step.

15. The method for manufacturing a substrate support member according to claim 11, characterized in that, prior to the film formation step, a processing step is performed to lower the height of the upper surface of the sealing portion to a level lower than the height of the plurality of protrusions.

16. Having a substrate support member according to any one of claims 1 to 10, A substrate processing apparatus characterized by processing a substrate supported by the substrate support member.

17. A support process in which the substrate is supported by a substrate support member, A forming step of forming a pattern on the substrate supported in the support step, A manufacturing step for manufacturing an article from a substrate on which the pattern has been formed in the forming step, and a method for manufacturing an article having the above, The substrate support member used in the support step is Multiple protrusions supporting the substrate, The substrate has a sealing portion for forming a reduced pressure space on the side of the substrate supported by the multiple protrusions when the multiple protrusions support the substrate, The aforementioned multiple protrusions each have a film at their upper end. The sealing portion either does not have a film at its upper end, or has a film thinner than the film on the plurality of protrusions. A method for manufacturing an article, characterized by the following:

Images