Apparatus and method for depositing film

Abstract

To provide a technology that can improve adhesion between a substrate and a mask irrespective of the material of the mask.SOLUTION: A film deposition apparatus includes: a mask including a pattern part with an opening that is formed to deposit a patterned film on a substrate and a frame part having a thickness that is thicker than that of the pattern part; a press member for pressing the frame part; and a biasing unit for biasing the press member.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a technique for forming a film on a substrate, and to a film forming apparatus and a film forming method. [Background technology]

[0002] There is a known technique for aligning a substrate and a mask, and then depositing a deposition material onto the substrate through the mask to form a film. The film is formed in a state where the aligned substrate and mask are in close contact with each other. There is a known technique for making the substrate and mask in close contact with each other using magnetic force. For example, the substrate is placed between the mask and a magnet plate, and the substrate and mask are brought into close contact with each other by the magnetic force between the mask and the magnet plate (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-099910 A Summary of the Invention [Problem to be solved by the invention]

[0004] If the mask is magnetic, such as an iron mask, it is possible to use magnetic force to bring the mask and substrate into close contact; however, if the mask is non-magnetic, such as silicon, it is difficult to use magnetic force.

[0005] The present invention provides a technique capable of improving the adhesion between a substrate and a mask, regardless of the material of the mask. [Means for solving the problem]

[0006] A film forming apparatus according to one aspect of the present invention includes a mask having a pattern portion in which an opening portion for forming a pattern on a substrate is formed, and a frame portion that is thicker than the pattern portion; A pressing member that presses the frame portion; and a biasing means for biasing the pressing member. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique capable of improving the adhesion between a substrate and a mask, regardless of the material of the mask. [Brief description of the drawings]

[0008] [Figure 1] Schematic diagram of a part of a manufacturing line for electronic devices. [Diagram 2] 1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. [Diagram 3] FIG. [Figure 4] 4A is a cross-sectional view taken along line AA in FIG. 3, FIG. 4B is an enlarged view of the frame portion 102 at part B in FIG. 4A, FIG. 4C is a diagram illustrating a state in which the surface of the frame portion is in contact with a substrate, and FIG. 4D is a diagram illustrating a state in which a load is applied to the frame portion. [Diagram 5] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 6] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 7] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 8] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 9] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 10] 13A and 13B are diagrams showing modified examples of recesses formed in the frame portion. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] First Embodiment <Electronic device manufacturing line> FIG. 1 is a schematic diagram showing a part of the configuration of an electronic device manufacturing line 100 to which the film forming apparatus of the present invention can be applied. In each drawing, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates a vertical direction (gravity direction). The manufacturing line of FIG. 1 is used, for example, for manufacturing light-emitting elements of an organic EL display device. The manufacturing line 100 includes a transfer chamber 120 having an octagonal shape in a plan view. A substrate 101 is carried into the transfer chamber 120 from a transfer path 110, and the substrate 101 on which a film has been formed is carried out from the transfer chamber 120 to a transfer path 111.

[0011] A plurality of film forming apparatuses 1 for performing film forming processing on a substrate 101 are arranged around the transfer chamber 120. A transfer chamber 130 is arranged adjacent to each film forming apparatus 1. A storage chamber 140 for storing a mask 102 is arranged around the transfer chamber 130, which has an octagonal shape in a plan view.

[0012] A transport robot 121 (transport unit) that transports the substrate 101 is disposed in the transport chamber 120. The transport robot 121 in this embodiment is a horizontal articulated robot, and transports the substrate 101 by mounting it in a horizontal position on its hand. The transport robot 121 performs a carry-in operation of transporting the substrate 101, which is carried in from the transport path 110, to the film formation apparatus 1, and a carry-out operation of transporting the substrate 101, which has been film-formed in the film formation apparatus 1, from the film formation chamber 1 to the transport path 111.

[0013] A transfer robot 131 (unit) for transferring the mask 102 is disposed in each transfer chamber 130. The transfer robot 131 in this embodiment is a horizontal articulated robot, and transfers the mask 102 by mounting it in a horizontal position on its hand portion. The transfer robot 131 performs an operation of transferring the mask 102 from the storage chamber 140 to the film forming apparatus 1 and an operation of transferring the mask 102 from the film forming apparatus 1 to the storage chamber 140.

[0014] <Film forming equipment> 2 is a schematic diagram of a film forming apparatus 1 according to one embodiment of the present invention. The film forming apparatus 1 is an apparatus for forming a film of a deposition material on a substrate 101, and forms a thin film of the deposition material in a predetermined pattern using a mask 102. The material of the substrate 101 on which a film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. Particularly in this embodiment, the substrate 101 is, for example, a glass substrate on which TFTs (Thin Film Transistors) are formed, or a silicon wafer on which semiconductor elements are formed.

[0015] The deposition material may be an organic material or an inorganic material (metal, metal oxide, etc.). The film forming apparatus 1 is applicable to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and optical components, and is particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example will be described in which the film forming apparatus 1 forms a film on the substrate 101 by vacuum deposition, but the present invention is not limited to this, and various film forming methods such as sputtering and CVD can be applied.

[0016] The film forming apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown). A deposition unit 10 is disposed in the internal space of the vacuum chamber 2. The deposition unit 10 includes a deposition source that discharges a deposition material upward. A shutter 10a that restricts and releases the discharge of the deposition material is disposed above the deposition unit 10. The shutter 10a is opened and closed by an opening / closing mechanism (not shown). FIG. 2 shows a case where the shutter 10a is in a closed state, and the discharge of the deposition material by the deposition unit 10 is restricted. An adhesion prevention plate 2a is also disposed above the deposition unit 10. The adhesion prevention plate 2a prevents the deposition material from unnecessarily adhering to the following components disposed in the upper part of the internal space of the vacuum chamber 2.

[0017] A substrate support plate 3 that supports the substrate 101 in a horizontal position is provided in the internal space of the vacuum chamber 2. In this embodiment, the substrate support plate 3 is an electrostatic chuck that attracts and holds the substrate 101 on its lower surface by electrostatic force. A cooling plate 4 is fixed on the substrate support plate 3. The cooling plate 4 is equipped with, for example, a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.

[0018] The mask 102 has a pattern portion 102b in which an opening is formed for forming a pattern on the substrate 101, and a frame portion 102a thicker than the pattern portion 102b. The pressing member 105 is a member that presses the frame portion 102a. During film formation, the pressing member 105 presses the frame portion 102a in the Z direction, causing deformation of the frame portion 102a. The force that causes deformation of the frame portion 102a acts on the pattern portion 102b as a tensile force in the X direction. The tensile force in the X direction acting on the pattern portion 102b makes the pattern portion 102b less likely to bend, and the adhesion between the mask 102 and the substrate 101 can be improved. The load and deformation acting on the frame portion 102a and the load acting on the pattern portion 102b will be described in detail later with reference to Figs. 4(A) to 4(D).

[0019] The film forming apparatus 1 includes a biasing unit 6 that supports a pressing member 105 that presses a frame portion 102a of a mask 102 during film formation and biases the pressing member 105. The biasing unit 6 includes a plurality of support members 6a, a claw portion F1 formed at the lower end of the plurality of support members 6a and on which the pressing member 105 is placed, and an actuator 6b that raises and lowers the plurality of support members 6a. The biasing unit 6 raises the plurality of support members 6a using the actuator 6b, so that the claw portion F1 applies a biasing force to the pressing member 105. In this embodiment, the biasing unit 6 can also transfer the substrate 101 between the transport robot 121 and the substrate support plate 3.

[0020] The biasing unit 6 includes a pair of support members 6a spaced apart in the X direction. Alternatively, the multiple support members 6a may include a pair of support members 6a spaced apart in the Y direction. Each support member 6a is raised and lowered in the Z direction by a corresponding actuator 6b. In this embodiment, an actuator 6b is provided for each support member 6a, but a pair of support members 6a may be raised and lowered by one actuator 6b. The actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism. A claw portion F1 is formed at the lower end of the support member 6a.

[0021] The pressing member 105 is a member extending in a direction along the frame portion 102a (Y direction: a direction perpendicular to the paper surface). The pressing member 105 is placed on the claw portion F1. When the substrate 101 is carried in and out, the peripheral portion of the substrate 101 is placed on the pressing member 105. When the mask 102 is carried in and out, the frame portion 102a, which is the peripheral portion of the mask 102, is placed on the pressing member 105, and the mask 102 is pressed by the pressing member 105 during film formation.

[0022] The pair of support members 6a are raised and lowered synchronously, and the actuator 6b raises the support members 6a, causing the claw portion F1 to apply a biasing force in the Z direction to the pressing member 105. The pressing member 105 presses the frame portion 102a based on the applied biasing force. In this embodiment, the biasing unit 6 has the pair of support members 6a, the actuator 6b, and the claw portion F1.

[0023] The film forming apparatus 1 includes an alignment unit 8 (alignment device) that aligns a substrate 101 and a mask 102. The alignment unit 8 includes a driving mechanism 80 and a plurality of measurement units SR. The driving mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a stand 83, and a position adjustment unit 84.

[0024] The distance adjustment unit 81 is a mechanism for raising and lowering the support shaft 82 in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism. The cooling plate 4 is fixed to the lower end of the support shaft 82. The substrate support plate 3 is suspended from the cooling plate 4 via the support portion 4a so as to be displaceable in the Z direction. The substrate support plate 3 is raised and lowered via the cooling plate 4 by raising and lowering the support shaft 82. By raising and lowering the substrate support plate 3, the distance between the substrate 101 and the mask 102 is adjusted, and the substrate 101 and the mask 102 supported by the substrate support plate 3 are moved closer to and farther apart (separated) in the thickness direction (Z direction) of the substrate 101. In other words, the distance adjustment unit 81 brings the substrate 101 and the mask 102 closer to each other in the direction in which they are superimposed, and separates them in the opposite direction. The "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit 81 can also be said to be a unit that adjusts the vertical position of the substrate 101. The distance adjustment unit 81 is mounted on a position adjustment unit 84 via a stand 83 .

[0025] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 on the XY plane. That is, the position adjustment unit 84 can also be said to be a unit that adjusts the horizontal positions of the mask 102 and the substrate 101. The position adjustment unit 84 can displace the substrate support plate 3 in a rotational direction (θ direction) around an axis in the X, Y, and Z directions. In this embodiment, the position of the mask 102 is fixed and the substrate 101 is displaced to adjust their relative positions, but the mask 102 may be displaced to adjust the position, or both the substrate 101 and the mask 102 may be displaced.

[0026] The position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b. The fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, and the fixed plate 84a is fixed onto the upper wall portion 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 20a and the movable plate 20b for displacing the movable plate 20b relative to the fixed plate 20a in the X-direction, Y-direction, and rotational directions around the Z-direction axes.

[0027] A frame-shaped stand 83 is mounted on the movable plate 84b, and a distance adjustment unit 81 is supported on the stand 83. When the movable plate 84b is displaced, the stand 83 and the distance adjustment unit 81 are displaced together. This allows the substrate 101 to be displaced in the rotational directions around the axes in the X-, Y-, and Z-directions. The upper wall 20 has openings through which the support shaft 82 and the support members 6a and 7a pass. These openings are sealed by sealing members (such as bellows) not shown, and the inside of the vacuum chamber 2 is kept airtight.

[0028] The measurement unit SR measures the positional deviation between the substrate 101 and the mask 102. The measurement unit SR in this embodiment is an imaging device (camera) that captures an image. The measurement unit SR is disposed on the upper wall portion 20 and is capable of capturing an image inside the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measurement unit SR captures images of the alignment marks of the substrate 101 and the mask 102. The amount of positional deviation between the substrate 101 and the mask 102 is calculated based on the position of each alignment mark, and the position adjustment unit 84 adjusts the relative positions of the substrate 101 and the mask 102 to eliminate the amount of positional deviation.

[0029] The control device 9 controls the entire film forming apparatus 1. The control device 9 includes a processing unit 90, a storage unit 91, an input / output interface (I / O) 92, and a communication unit 93. The processing unit 90 is a processor such as a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 91. The storage unit 91 is a storage device such as a ROM, a RAM, or a HDD, and stores various types of control information in addition to the program executed by the processing unit 90. The I / O 92 is an interface that transmits and receives signals between the processing unit 90 and an external device. The communication unit 93 is a communication device that communicates with a higher-level device or other control devices via a communication line.

[0030] <Example of substrate and mask configuration> 3 shows an example of a substrate 101 and a mask 102. The substrate 101 is a circular silicon wafer, and after film formation and the like, a plurality of chips 101a are cut out from the substrate 101 along cutting lines 101b. The mask 102 is a circular member similar to the substrate 101, and includes a pattern portion 102b corresponding to each chip 101a, and a frame portion 102a surrounding the pattern portion 102b. A plurality of openings (through holes) 102c are formed in the pattern portion 102b, through which a deposition material to be deposited on the substrate 101 passes, and the deposition pattern on the substrate 101 is determined by the arrangement of the openings 102c.

[0031] Fig. 4(A) is a cross-sectional view taken along line AA in Fig. 3, and the mask 102 has a pattern portion 102b in which an opening 102c for forming a pattern on the substrate 101 is formed, and a frame portion 102a that is thicker than the pattern portion 102b. As shown in Fig. 4(A), the frame portion 102a is a thick portion that is relatively thicker than the pattern portion 102b, the pattern portion 102b is a thin portion that is relatively thinner, and the frame portion 102a has higher rigidity than the pattern portion 102b.

[0032] The mask 102 is made of a non-magnetic material such as silicon (Si). The material of the mask 102 is not limited to a non-magnetic material, and may be a magnetic material. By using a silicon wafer as the mask 102, finer and more precise openings 102c can be formed by applying semiconductor manufacturing technology.

[0033] Fig. 4(B) is an enlarged view of frame portion 102a at part B in Fig. 4(A). Surface 102e of frame portion 102a is a surface (hereinafter also referred to as a first surface) that contacts substrate 101, and surface 102f (hereinafter also referred to as a second surface) is formed on the opposite side of surface 102e (first surface).

[0034] As shown in Fig. 4(B), a recess 102d is formed on a surface 102f (second surface) of the frame portion 102a. The thickness of the portion of the frame portion 102a where the recess 102d is not formed is TH1, and the thickness of the portion where the recess 102d is formed is TH2. As shown in Fig. 4(B), the portion where the recess 102d is not formed is relatively thicker than the portion where the recess 102d is formed (TH1>TH2), and has high rigidity.

[0035] Fig. 4(C) is a diagram illustrating a state in which the surface 102e (first surface) of the frame portion 102a is in contact with the substrate 101. In the state shown in Fig. 4(C), the surface 102e (first surface) is in close contact with the substrate 101, but the pattern portion 102b is not in close contact with the substrate 101.

[0036] 4(D) is a diagram illustrating a state in which a load P1 acts on the frame portion 102a. The load P1 acts on the surface 102f (second surface) of the mask 102 in a direction to press (compress) the surface 102e (first surface) against the substrate 101, and is a biasing force applied by the biasing unit 6.

[0037] When the load P1 acts to press the frame portion 102a, a displacement δ occurs in the recess 102d of the frame portion 102a in the direction opposite to the direction in which the biasing force (load P1) acts. Due to the displacement of the recess 102d, a compressive force F2 occurs on the side of the surface 102e side (first surface side) of the frame portion 102a that contacts the substrate 101, and a tensile force occurs on the side of the surface 102f side (second surface side) opposite the first surface. A tensile force F4 corresponding to the compressive force F2 occurs in the pattern portion 102b.

[0038] That is, by pressing the frame portion 102a with the load P1 to generate a displacement δ in the recessed portion 102d having low rigidity, a tensile force F4 corresponding to the compressive force F2 can be applied to the pattern portion 102b. By applying the tensile force F4 to the pattern portion 102b, the pattern portion 102b becomes less likely to bend, and the adhesion between the mask 102 and the substrate 101 can be improved.

[0039] The examples shown in FIGS. 4(A) to 4(D) are illustrative of the structure of the cross section taken along line AA in FIG. 3, but the same is true for the cross section taken along line CC in FIG.

[0040] The frame portion 102a is formed on the periphery of the mask 102. In a plan view (XY plane) of the mask 102, a plurality of frame portions 102a are formed at positions aligned with cut-out lines 101b along which the chips 101a are cut out from the substrate 101. In addition, a plurality of frame portions 102a are formed along the arrangement (arrangement direction) of the pattern portion 102b in a plan view (XY plane) of the mask 102. In a plan view (XY plane) of the mask 102, a plurality of frame portions 102a are formed along a first arrangement direction (e.g., X direction) of the pattern portion 102b, and a plurality of frame portions 102a are formed along a second arrangement direction (e.g., Y direction) intersecting the first arrangement direction.

[0041] In the plane of the mask 102, the frame portion 102a is formed, for example, in a lattice shape intersecting the first arrangement direction and the second direction, and the frame portion 102a has higher rigidity in the Z direction than the pattern portion 102b. The plurality of frame portions 102a formed along the first arrangement direction (X direction) are pressed by the load P1, and the plurality of frame portions 102a formed along the second arrangement direction (Y direction) are pressed by the load P1, so that the tensile force F4 as described in FIG. 4(D) can be generated overall in the plurality of pattern portions 102b formed on the mask 102. This makes the plurality of pattern portions 102b less likely to bend, and the adhesion between the mask 102 and the substrate 101 can be improved.

[0042] The surface on which the recesses 102d are formed is not limited to the surface 102f (second surface), and the frame portion 102a may have the recesses 102d formed on at least one of the surface 102e (first surface) that contacts the substrate 101 and the surface 102f (second surface) opposite to the surface 102e (first surface). The positions, shapes, and number of the recesses 102d are not limited to the examples shown in Figures 4(A) to 4(D), and various modifications are possible. For example, the surface on which the recesses 102d are formed, the curvature of the recesses 102d, the width and depth of the recesses, and the like can be variously modified.

[0043] 10(A) to 10(D) are diagrams showing modified examples of the positions, shapes, and number of recesses 102. As shown in Fig. 10(A) to 10(D), recesses are formed in at least one of a surface 102e (first surface) of frame portion 102a that contacts substrate 101 and a surface 102f (second surface) opposite surface 102e (first surface).

[0044] Fig. 10(A) shows an example in which a recess 102h is formed on a surface 102e (first surface) of a frame portion 102a, and a recess 102i is formed on a surface 102f (second surface). In addition, the depth (DP2) of the recess 102i is formed deeper than the depth (DP1) of the recess 102h (DP2>DP1). Note that the magnitude relationship of the depths is not limited to the example of Fig. 10(A), and the magnitude relationship may be reversed.

[0045] In the frame portion 102a, a portion where the recesses 102h, 102i are not formed is relatively thick and has high rigidity compared to the portion where the recesses 102h, 102i are formed. The portion where the recesses 102h, 102i are formed has relatively low rigidity, and the biasing force applied by the biasing unit 6( causes a displacement δ as shown in FIG. 4(D) in the frame portion 102a.

[0046] 4(B) and 10(A) show examples of the recesses 102d, 102h, and 102i formed with a predetermined curvature, but the present invention is not limited to these examples. For example, as shown in FIG. 10(B), the recess 102j may be formed in a straight line. In this case, as in FIG. 10(A), the portion of the frame portion 102a where the recess 102j is not formed is relatively thicker and more rigid than the portion where the recess 102j is formed. The portion where the recess 102j is formed has a relatively low rigidity, and the biasing force applied by the biasing unit 6 causes a displacement δ in the frame portion 102a as shown in FIG. 4(D).

[0047] FIG. 10(C) is a diagram showing an example in which a linear recess 102k is formed at one location on the surface 102e (first surface) and a linear recess 102m is formed at multiple locations (for example, two locations) on the surface 102f (second surface). FIG. 10(D) is a diagram showing an example in which a linear recess 102k is formed at multiple locations (for example, two locations) on the surface 102e (first surface) and a linear recess 102m is formed at one location on the surface 102f (second surface). As shown in FIG. 10(C) and FIG. 10(D), regardless of the position, shape, or number of the recesses formed on the frame portion 102a, the portion where the recesses are not formed is relatively thick and has high rigidity compared to the portion where the recesses are formed. The portion where the recesses 102k, 102m, 102n, and 102p are formed has a relatively low rigidity, and the biasing force applied by the biasing unit 6 causes the displacement δ shown in FIG. 4(D) in the frame portion 102a.

[0048] 4(D) and 10(A) to 10(D), the deeper the recess, the lower the rigidity becomes relatively, and therefore the displacement δ in the frame portion 102a can be increased. This makes it possible to increase the tensile force F4 on the pattern portion 102b, thereby improving the adhesion between the mask 102 and the substrate 101.

[0049] <Control example> An example of control of the film formation apparatus 1 executed by the processing unit 90 of the control device 9 will be described below. Figures 5(A) to 9(B) are explanatory diagrams of the operation of the film formation apparatus 1, showing an example of a process from loading of the substrate 101 to film formation and unloading.

[0050] FIG. 5(A) shows the state in which the substrate 101 has been carried into the vacuum chamber 2. The substrate 101 is carried below the substrate support plate 3 by the transport robot 121. The substrate adsorption surface 3a on the lower surface of the substrate support plate 3 is horizontal. Next, the biasing unit 6 transfers the substrate 101 from the transport robot 121 to the substrate support plate 3. FIG. 5(B) shows this operation. By raising the support member 6a, the peripheral edge of the substrate 101 is placed on the pressing member 105, and the substrate 101 is raised from the transport robot 121 and pressed against the substrate adsorption surface 3a of the substrate support plate 3. The electrostatic chuck of the substrate support plate 3 is operated to adsorb and hold the substrate 101.

[0051] Next, the mask 102 is carried into the vacuum chamber 2. FIG. 6(A) shows the state in which the mask 102 is carried into the vacuum chamber 2. The mask 102 is carried into the vacuum chamber 2 from the storage chamber 140 by the transport robot 131. The mask 102 is positioned directly below the substrate 101. Next, the mask 102 is transferred from the transport robot 131 to the biasing unit 6 and positioned at the alignment position. FIG. 6(B) shows this operation. By raising the support member 6a, the periphery of the mask 102 is placed on the pressing member 105, and the mask 102 is raised from the transport robot 131. The mask 102 is supported by the support member 6a, and is further raised to be positioned at the alignment position. In this embodiment, the mask 102 is raised to be positioned at the alignment position, but a configuration in which the substrate 101 is lowered to be positioned at the alignment position may also be used.

[0052] Next, the alignment operation is performed. As shown in Fig. 7(A), the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the mask 102. If the measurement result (the amount of misalignment between the substrate 101 and the mask 102) is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, a control amount (the amount of displacement of the substrate 101) is set based on the measurement result to bring the amount of misalignment within the allowable range.

[0053] The "amount of misalignment" is defined as the distance and direction (X, Y, θ) of the misalignment. Based on the set control amount, the position adjustment unit 84 is operated as shown in Fig. 7(B). As a result, the substrate support plate 3 is displaced on the XY plane, and the relative position of the substrate 101 with respect to the mask 102 is adjusted.

[0054] Whether or not the measurement results are within the allowable range can be determined, for example, by calculating the distances between the alignment marks and comparing the average value or the sum of squares of the distances with a preset threshold value.

[0055] After the relative positions are adjusted, the measurement unit SR again measures the relative positions of the alignment marks on the substrate 101 and the mask 102. If the measurement result is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, the relative position of the substrate 101 with respect to the mask 102 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement result falls within the allowable range.

[0056] Next, a film forming operation is performed. First, the substrate 101 is overlapped with the mask 102. FIG. 8(A) shows this operation. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102, and the entire surface to be processed of the substrate 101 comes into contact with the mask 102. With the substrate 101 and the mask 102 in contact with each other, the support member 6a is raised by the actuator 6b, and the claw portion F1 applies a biasing force in the Z direction to the pressing member 105. The pressing member 105 presses the frame portion 102a based on the applied biasing force.

[0057] With the mask 102 in contact with the substrate 101, the frame portion 102a is pressed by the biasing force of the biasing unit 6, so that the substrate 101 and the pattern portion 102b are brought into close contact with each other. As described in FIG. 4(D), the frame portion 102a is pressed by the biasing force (load P1) to generate a displacement δ in the recess 102d having low rigidity, so that a tensile force F4 corresponding to the compressive force F2 can be applied to the pattern portion 102b. By applying the tensile force F4 to the pattern portion 102b, the pattern portion 102b becomes less likely to bend, and the adhesion between the mask 102 and the substrate 101 can be improved. The material of the mask 102 may be a non-magnetic material or a magnetic material, and this embodiment can be applied. According to this embodiment, the adhesion between the substrate and the mask can be improved regardless of the material of the mask.

[0058] 8(B), the shutter 10a is opened and the deposition material is released from the deposition unit 10. With the substrate 101 and the pattern portion 102b in close contact with each other, the deposition material is released onto the substrate 101 through the mask 102. The deposition material is deposited onto the substrate 101 through the mask 102.

[0059] When the film formation is completed, the mask 102 and the substrate 101 are each unloaded. Fig. 9(A) shows the operation of unloading the mask 102. First, the cooling plate 4 and the substrate support plate 3 are raised to separate the substrate 101 from the mask 102. After the hand portion of the transfer robot 131 is inserted below the mask 102, the support member 6a of the biasing unit 6 is lowered to transfer the mask 102 from the support member 6a to the transfer robot 131. The transfer robot 131 transfers the mask 102 to the storage chamber 140.

[0060] Next, the substrate 101 on which the film has been formed is carried out. The support member 6a of the biasing unit 6 is raised, and the substrate 101 is supported from below by the pressing member 105. The suction of the substrate support plate 3 to the substrate 101 is released, and the substrate 101 is transferred to the support member 6a. After the hand portion of the transport robot 121 is advanced below the substrate 101, the support member 6a of the biasing unit 6 is lowered as shown in FIG. 9(B), and the substrate 101 is transferred from the support member 6a to the transport robot 121. The transport robot 121 transports the substrate 101 to the transport path 111. This completes the operations from carrying in the substrate 101, to forming a film on it, and carrying it out.

[0061] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) that implements one or more of the functions.

[0062] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0063] 1: film forming device, 8: alignment unit, 10: deposition unit, 101: substrate, 102: mask, 102a: frame portion, 102b: pattern portion, 105: pressing member, 6: biasing unit, 6a: support member, 6b: actuator, F1: claw portion

Claims

1. a mask having a pattern portion in which an opening is formed for forming a pattern on a substrate, and a frame portion that is thicker than the pattern portion; A pressing member that presses the frame portion; a biasing means for biasing the pressing member; A film forming apparatus comprising:

2. 2. The film forming apparatus according to claim 1, wherein the frame portion has a recess formed on at least one of a first surface that contacts the substrate and a second surface opposite the first surface.

3. 2. The film deposition apparatus according to claim 1, wherein the pressing member presses the frame portion against the substrate by the biasing force of the biasing means.

4. 2. The film forming apparatus according to claim 1, wherein the frame portion is formed in a plurality of positions aligned with cutting lines along which chips are cut out from the substrate in a plan view of the mask.

5. The film forming apparatus according to claim 1 , wherein the frame portion is formed in a plurality of positions along an arrangement direction of the pattern portion in a plan view of the mask.

6. The film forming apparatus according to claim 5, characterized in that the frame portions are formed in a plurality of positions along a first arrangement direction of the pattern portions when viewed in a planar view of the mask, and are formed in a plurality of positions along a second arrangement direction intersecting the first arrangement direction.

7. 2. The film forming apparatus according to claim 1, wherein the frame portion is formed on a peripheral edge portion of the mask.

8. The biasing means is A pair of support members; a claw portion formed at a lower end portion of the support member and on which the pressing member is placed; an actuator for raising and lowering the support member, 2. The film forming apparatus according to claim 1, wherein the actuator raises the supporting member, whereby the claw portion applies a biasing force to the pressing member.

9. A film formation method for a film formation apparatus including a mask having a pattern portion in which an opening portion for forming a pattern on a substrate is formed and a frame portion thicker than the pattern portion, a pressing member for pressing the frame portion, and a biasing means for biasing the pressing member, comprising: a pressing step of pressing the frame portion with the biasing force of the biasing means while the mask is in contact with the substrate, thereby bringing the substrate and the pattern portion into close contact with each other; a deposition process of ejecting a deposition material onto the substrate through the mask while the substrate and the pattern portion are in close contact with each other; A film forming method comprising the steps of:

10. In the pressing step, By pressing the frame portion, the recess of the frame portion is displaced, a compressive force is generated on a side surface of the frame portion on a first surface side that contacts the substrate by the displacement of the recess, and a tensile force is generated on a side surface of the frame portion on a second surface side opposite to the first surface, The film forming method according to claim 9 , further comprising the step of generating a tensile force on the pattern portion in response to the compressive force.

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