Stage structure, substrate processing apparatus, and temperature control method

Abstract

To provide a stage structure for cooling stages for placing a substrate thereon, a substrate processing apparatus, and a temperature control method.SOLUTION: A stage structure includes a plurality of stages for placing a substrate thereon, a single cooling plate common to the plurality of stages, a refrigerator to cool the cooling plate, and a lift device capable of thermally connecting or separating a first contact surface of the plurality of stages and a second contact surface of the cooling plate.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a stage structure, a substrate processing apparatus, and a temperature control method. [Background technology]

[0002] Patent Document 1 discloses a substrate mounting mechanism for mounting a substrate on which a film is to be formed in a film formation apparatus, the substrate mounting mechanism comprising: a mounting table having a substrate mounting surface on which a substrate is to be mounted; a cooling head provided opposite the substrate mounting surface of the mounting table and cooled to an extremely low temperature by a refrigerator; a contact / separation mechanism for moving the mounting table and the cooling head closer to or farther from each other; a rotation mechanism for rotating the mounting table; and a control unit, the control unit controlling the mounting table and the cooling head to a state in which the mounting table and the cooling head are in contact with each other using the contact / separation mechanism except during film formation, and placing the substrate on the mounting table in this state, and during film formation, rotating the mounting table using the rotation mechanism while the mounting table and the cooling head are separated by the contact / separation mechanism. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-47624 A Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a stage structure for cooling a stage on which a substrate is placed, a substrate processing apparatus, and a temperature control method. [Means for solving the problem]

[0005] In order to solve the above problem, according to one embodiment, a stage structure is provided comprising: a plurality of stages on which a substrate is placed; a cooling plate common to the plurality of stages; a refrigerator for cooling the cooling plate; and a lifting device capable of thermally connecting or separating first contact surfaces of the plurality of stages and a second contact surface of the cooling plate. Effect of the Invention

[0006] According to one aspect, it is possible to provide a stage structure for cooling a stage on which a substrate is placed, a substrate processing apparatus, and a temperature control method. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing an example of a configuration of a substrate processing apparatus including a stage structure according to an embodiment of the present invention. [Diagram 2] FIG. 4 is a block diagram illustrating a heater controller that controls a heater. [Diagram 3] 5 is a graph showing an example of temperature control. [Figure 4] 13 is a graph showing an example of a temperature change of a stage in a reference example. [Diagram 5] 6 is a graph showing an example of a temperature change of a stage in the present embodiment. [Figure 6] 5A to 5C are examples of schematic cross-sectional views illustrating states of a stage in each process. [Figure 7] 4 is a time chart showing an example of an operation of the substrate processing apparatus. [Figure 8] FIG. 2 is a schematic diagram showing an example of a stage structure. [Figure 9] FIG. 2 is a schematic diagram showing an example of a stage structure. [Figure 10] FIG. 4 is an enlarged view showing an example of the shape of a through hole. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] An example of a substrate processing apparatus 1 including a stage structure according to this embodiment will be described with reference to Fig. 1. Fig. 1 is an example of a cross-sectional view showing the configuration of a substrate processing apparatus 1 including a stage structure according to this embodiment.

[0010] 1, the substrate processing apparatus 1 is a substrate processing apparatus (e.g., a PVD (Physical Vapor Deposition) apparatus, etc.) that supplies a processing gas into a processing vessel 2 and sputters a target 31 provided in the processing vessel 2 to perform a desired processing (e.g., a film formation process, etc.) on a substrate W. Note that, although the substrate processing apparatus 1 including the stage structure according to the present embodiment will be described as a PVD apparatus, the present invention is not limited thereto, and may be, for example, a substrate processing apparatus (e.g., a CVD (Chemical Vapor Deposition) apparatus, an ALD (Atomic Layer Deposition) apparatus, etc.) that supplies a processing gas into the processing vessel 2 to perform a desired processing (e.g., a film formation process, etc.) on a substrate W.

[0011] The substrate processing apparatus 1 includes a processing vessel 2, a sputter particle emission unit 3, a plurality of stages 4 (4A, 4B) on which a substrate W is placed, a refrigerator 5 common to the plurality of stages 4, a stage rotation mechanism 6 for rotating the stage 4, a stage lifting mechanism 7 for raising and lowering the stage 4, a heater controller 8, and a control unit 9. In addition, in the substrate processing apparatus 1, a structure for supporting the substrate W is also referred to as a stage structure. Specifically, the stage structure includes a plurality of stages 4 (4A, 4B), a refrigerator 5, a stage rotation mechanism 6, a stage lifting mechanism 7, and a heater controller 8.

[0012] The processing vessel 2 forms an internal space 2S. The processing vessel 2 is configured such that the internal space 2S can be depressurized to an ultra-high vacuum by operating an exhaust device (not shown) such as a vacuum pump. The processing vessel 2 also has a gas inlet port (not shown) through which a processing gas is supplied from a processing gas supply unit. In the PVD apparatus, a sputtering gas (e.g., an inert gas) is introduced into the internal space 2S as the processing gas from the gas inlet port.

[0013] The sputter particle emission unit 3 includes a target 31 and a sputter power supply 32. The target 31 is made of a material containing the constituent elements of the film to be formed. The target 31 is held by a conductive target holder (not shown). The target holder is held in the processing vessel 2 via an insulating member (not shown). The sputter power supply 32 is electrically connected to the target holder. The sputter power supply 32 may be a DC power supply when the target 31 is a conductive material, and may be a high-frequency power supply when the target 31 is a dielectric material. When the sputter power supply 32 is a high-frequency power supply, it is connected to the target holder via a matching device. When a voltage is applied to the target holder, the sputter gas is dissociated around the target 31. Then, ions in the dissociated sputter gas collide with the target 31, and sputter particles, which are particles of the constituent material, are emitted from the target 31.

[0014] A plurality of stages 4 (4A, 4B) on which substrates W are placed are provided inside the processing vessel 2. In the example shown in FIG. 1, the substrate processing apparatus 1 has two stages 4A, 4B. The stage 4 is made of a material having high thermal conductivity (e.g., copper (pure copper), aluminum, etc.). The heat capacity of the stage 4 is sufficiently larger than that of the substrate W.

[0015] The stage 4 also includes an electrostatic chuck. The electrostatic chuck has a chuck electrode 41 embedded in a dielectric film. The chuck electrode 41 is connected to a chuck power supply 42 via a slip ring 63 described later, and is provided with a predetermined potential. With this configuration, the substrate W can be attracted by the electrostatic chuck and fixed to the upper surface (substrate placement surface) of the stage 4. The stage 4 can be placed at either an elevated position or a lowered position by the stage elevation mechanism 7. The elevated position is a position where a first contact surface 4S of the stage 4 is separated from a second contact surface 521S of a cooling plate 52 described later. The elevated position is a position (stage rotation position) where the stage 4 can be rotated by the stage rotation mechanism 6. The lowered position is a position (stage cooling position) where a first contact surface 4S of the stage 4 is thermally connected to a second contact surface 521S of a cooling plate 52 described later. In the example shown in FIG. 1, the first contact surface 4S is formed on the surface (lower surface, back surface) of the stage 4 opposite to the substrate mounting surface (upper surface).

[0016] Furthermore, the stage 4 is provided with a temperature sensor 43 that detects the temperature of the stage 4. The temperature sensor 43 is connected to the heater controller 8 via a slip ring 63, which will be described later. Furthermore, a plurality of temperature sensors 43 are provided on each stage 4, as shown in FIG. 2, which will be described later.

[0017] The stage 4 also has a heat transfer gas supply unit 44 that supplies a heat transfer gas (for example, He gas) to the gap between the rear surface of the substrate W and the mounting surface of the stage 4.

[0018] A support pillar 45 that supports the stage 4 is provided in the center of the surface of the stage 4 opposite to the substrate mounting surface. A part of the support pillar 45 has a heat insulating part 451 made of a heat insulating material. The support pillar 45 also serves as a rotation axis when rotating the stage 4.

[0019] A refrigeration device 5 is provided below the stage 4. The refrigeration device 5 includes a refrigerator 51 and a cooling plate 52.

[0020] The refrigerator 51 is provided outside the processing vessel 2. From the viewpoint of cooling capacity, the refrigerator 51 preferably uses a GM (Gifford-McMahon) cycle.

[0021] The cooling plate 52 has a plate portion 521 and a heat transfer portion 522. The cooling plate 52 is made of a material having high thermal conductivity (for example, copper (pure copper), aluminum, etc.). The plate portion 521 and the heat transfer portion 522 may be integrally formed, or may be formed separately and thermally connected. The heat capacity of the cooling plate 52 is sufficiently larger than that of the stage 4.

[0022] The plate portion 521 has a plurality of through holes 521h through which the support columns 45 are inserted. The through holes 521h are formed one for each support column 45. The plate portion 521 also has a second contact surface 521S thermally connected to the first contact surface 4S of the stage 4. In the example shown in FIG. 1, the second contact surface 521S is formed on the upper surface of the plate portion 521. The second contact surface 521S is also formed around the through holes 521h. One end of the heat transfer portion 522 is connected to the plate portion 521. The other end of the heat transfer portion 522 penetrates the bottom wall of the processing vessel 2 and is thermally connected to the refrigerator 51. A heat insulating member 21 is provided between the bottom wall of the processing vessel 2 and the heat transfer portion 522.

[0023] With this configuration, the refrigerator 51 cools the second contact surface 521S of the cooling plate 52 to an extremely low temperature. The refrigerator 51 also cools, via the cooling plate 52, the stage 4 that is placed in the lowered position.

[0024] Moreover, a heater 53 for heating the plate portion 521 is provided on the back surface side (the surface opposite to the second contact surface 521S) of the plate portion 521. Moreover, as shown in FIG. 2 described later, a plurality of heaters 53 are provided corresponding to each stage 4.

[0025] The stage rotation mechanism 6 includes a motor 61 , a magnetic fluid seal 62 , and a slip ring 63 .

[0026] The motor 61 is provided below a lift plate 71, which will be described later, and rotates the stage 4 by rotating the support column 45. The motor 61 is, for example, a direct drive motor (DD motor). Note that the stage rotation mechanism 6 that rotates the support column 45 may be in a form other than a direct drive motor, and may be in a form that rotates the support column 45 using, for example, a servo motor and a transmission belt.

[0027] The support pillars 45 penetrate the lift plate 71. A magnetic fluid seal 62 is provided between the support pillars 45 and the lift plate 71. The magnetic fluid seal 62 rotatably supports the support pillars 45 and seals the gap between the support pillars 45 and the lift plate 71 to separate the internal space 2S of the processing vessel 2 from the external space of the processing vessel 2.

[0028] With this configuration, the stage rotation mechanism 6 rotates the support column 45 by the motor 61, thereby rotating the stage 4.

[0029] The slip ring 63 transmits electric signals from the rotating support column 45 and the temperature sensor 43 provided on the stage 4 , and power to the chuck electrode 41 .

[0030] The stage lifting mechanism 7 includes a lifting plate 71, a bellows 72, and a lifting driver (not shown). The lifting plate 71 rotatably supports the support column 45 via a magnetic fluid seal 62. The bellows 72 seals between the lifting plate 71 and the processing vessel 2, and separates the internal space 2S of the processing vessel 2 from the external space of the processing vessel 2. The lifting driver raises or lowers the lifting plate 71. In this way, the lifting driver raises or lowers the stage 4. The lifting driver may be a device that raises or lowers the stage 4 using, for example, a ball screw and a servo motor.

[0031] With this configuration, the stage lifting mechanism 7 places the stage 4 in an elevated position by raising the lift plate 71 using the lift drive unit, and places the stage 4 in a lowered position by lowering the lift plate 71 using the lift drive unit.

[0032] The heater controller 8 controls the heater 53 (531 to 534) based on the temperature detected by the temperature sensor 43.

[0033] The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus 1. The control unit 9 may be provided inside or outside the substrate processing apparatus 1. When the control unit 9 is provided outside the substrate processing apparatus 1, the control unit 9 can control the substrate processing apparatus 1 via a communication means such as a wired or wireless communication means.

[0034] With this configuration, the stage structure places the stage 4 in a lowered position by the stage lifting mechanism 7, thereby thermally connecting the first contact surface 4S of the stage 4 and the second contact surface 521S of the cooling plate 52, thereby cooling the stage 4. Furthermore, the stage structure places the stage 4 in an elevated position by the stage lifting mechanism 7, thereby separating the first contact surface 4S of the stage 4 from the second contact surface 521S of the cooling plate 52. Furthermore, with the stage 4 placed in the elevated position, the stage structure rotates the stage 4 by the stage rotation mechanism 6.

[0035] Furthermore, the stage structure can prevent the diameter of the support column 45 from increasing. In other words, the diameters of the direct drive motor 61, the magnetic fluid seal 62, and the slip ring 63 can be prevented from increasing. Furthermore, the cooling position of the stage 4 (lowered position) and the rotation position of the stage 4 (upper position) can be switched without using a lifting mechanism for lifting the refrigeration device 5 (refrigerator 51, cooling plate 52).

[0036] Next, an example of temperature control by the heater controller 8 will be described with reference to FIGS.

[0037] FIG. 2 is a block diagram illustrating the heater controller 8 that controls the heater 53.

[0038] The temperature sensor 43 includes a first inner temperature sensor 431 and a first outer temperature sensor 432 provided on the first stage 4A, and a second inner temperature sensor 433 and a second outer temperature sensor 434 provided on the second stage 4B. The first inner temperature sensor 431 measures the temperature of the first stage 4A in an area closer to the center of rotation of the first stage 4A. The first outer temperature sensor 432 measures the temperature of the first stage 4A in an area farther from the center of rotation of the first stage 4A. The second inner temperature sensor 433 measures the temperature of the second stage 4B in an area closer to the center of rotation of the second stage 4B. The second outer temperature sensor 434 measures the temperature of the second stage 4B in an area farther from the center of rotation of the second stage 4B.

[0039] The heater 53 includes a first inner heater 531 and a first outer heater 532 corresponding to the first stage 4A, and a second inner heater 533 and a second outer heater 534 corresponding to the second stage 4B.

[0040] A first inner heater 531 is provided in an annular region concentric with a through hole 521h through which the support column 45 of the first stage 4A is inserted. A first outer heater 532 is provided in an annular region concentric with a through hole 521h through which the support column 45 of the first stage 4A is inserted, and is located outside the region where the first inner heater 531 is provided. A second inner heater 533 is provided in an annular region concentric with a through hole 521h through which the support column 45 of the second stage 4B is inserted. A second outer heater 534 is provided in an annular region concentric with a through hole 521h through which the support column 45 of the second stage 4B is inserted, and is located outside the region where the second inner heater 533 is provided.

[0041] 3 is a graph showing an example of temperature control. The horizontal axis indicates time. The vertical axis indicates the temperature of the stage 4. Here, the stage 4 is lowered by the stage lifting mechanism 7, and the first contact surface 4S and the second contact surface 521S are in thermal contact with each other.

[0042] 3(a), CH1 indicated by a dashed line is the temperature detected by the first inner temperature sensor 431. CH2 indicated by a solid line is the temperature detected by the second inner temperature sensor 433.

[0043] Here, there is a temperature difference ΔT between the temperature of the stage 4A indicated by CH1 and the temperature of the stage 4B indicated by CH2. In this case, the heater controller 8 increases the amount of power supplied to the heater with the lower temperature. Here, the amount of power supplied to the second inner heater 533 is increased. In other words, the amount of power supplied to the second inner heater 533 is made greater than the amount of power supplied to the first inner heater 531. This adjusts the temperature of the stage 4B indicated by CH2 until it becomes equivalent to the temperature of the stage 4A indicated by CH1.

[0044] Although an example of adjusting the temperature difference in the inner region detected by the first inner temperature sensor 431 and the second inner temperature sensor 433 has been described, the present invention is not limited to this. The same applies to the case of adjusting the temperature difference in the outer region detected by the first outer temperature sensor 432 and the second outer temperature sensor 434. In this way, the power supplied to the first heater (531, 532) or the second heater (533, 534) corresponding to the temperature sensor with the lower temperature out of the temperature sensor (431, 432) of one stage 4A and the temperature sensor (433, 434) of the other stage 4B is increased. This makes it possible to reduce the temperature difference between the stages 4.

[0045] 3(b), CH1in indicated by a dashed line is the temperature detected by the first inner temperature sensor 431. CH1out indicated by a dashed line is the temperature detected by the first outer temperature sensor 432.

[0046] Here, there is a temperature difference Δt1 between the temperature inside the stage 4A indicated by CH1in and the temperature outside the stage 4A indicated by CH1out. In this case, the heater controller 8 increases the amount of power supplied to the heater with the lower temperature. Here, the amount of power supplied to the first outer heater 532 is increased. In other words, the amount of power supplied to the first outer heater 532 is made greater than the amount of power supplied to the first inner heater 531. This adjusts the temperature until the temperature outside the stage 4A indicated by CH1out becomes equivalent to the temperature inside the stage 4A indicated by CH1in.

[0047] Although an example of adjusting the temperature difference between the inner and outer periphery sides of the first stage 4A has been described, the present invention is not limited to this. The same applies to the case of adjusting the temperature difference between the inner and outer periphery sides of the second stage 4B. In this way, the temperature difference within one stage 4 can be reduced.

[0048] Next, the temperature change of the cooling plate 52 when a plurality of substrates W are successively subjected to substrate processing will be described with reference to FIGS.

[0049] 4 is a graph showing an example of temperature change of the stage 4 in a reference example. The horizontal axis indicates the number of processed substrates W, and the vertical axis indicates the temperature of the stage 4.

[0050] Here, an example of the temperature change of stage 4 when temperature adjustment by heater 53 is not performed is shown. Due to the temperature of the transported substrate W and the heat input from the plasma during substrate processing, the temperature of stage 4 rises with a temperature difference ΔT as shown in Fig. 4. Therefore, in order to perform substrate processing at a stable temperature, first, a predetermined number of dummy substrates are processed, and after the temperature of stage 4 becomes stable (equilibrium state), processing of substrates W to be products (product processing) is performed.

[0051] 5 is a graph showing an example of a change in temperature of the stage 4 in this embodiment. The horizontal axis indicates the number of processed substrates W, and the vertical axis indicates the temperature of the stage 4.

[0052] Here, a predetermined power is supplied in advance to the heater 53 at the start of substrate processing of the first substrate W. When heat is input from the temperature of the transported substrate W or from the plasma during substrate processing, the heater controller 8 controls the power supplied to the heater 53 to be reduced based on the temperature detected by the temperature sensor 43.

[0053] An example of temperature control when a plurality of substrates W are subjected to substrate processing will be described below.

[0054] First, the first substrate W is placed on the stage 4. Next, the stage 4 on which the first substrate W is placed is placed in a lowered position, and the first contact surface 4S and the second contact surface 521S are thermally connected to each other, thereby cooling the stage 4 and the first substrate W. Here, a first power is supplied to the heater 53.

[0055] Next, the stage 4 on which the first substrate W is placed is placed in an elevated position, and the first contact surface 4S is separated from the second contact surface 521S. Then, substrate processing (film formation processing) is performed on the first substrate W. The substrate W that has been subjected to the film formation processing is carried out of the processing chamber 2.

[0056] Next, the second substrate W is placed on the stage 4. Next, the stage 4 on which the second substrate W is placed is placed in a lowered position, the first contact surface 4S and the second contact surface 521S are thermally connected, and the stage 4 and the first substrate W are cooled. At this time, the temperature of the stage 4 is high due to heat input when the first substrate W is subjected to substrate processing. Here, a second power smaller than the first power is supplied to the heater 53. This improves the cooling performance of the stage 4 by the refrigeration device 5.

[0057] Next, the stage 4 on which the second substrate W is placed is placed in a raised position, and the first contact surface 4S is separated from the second contact surface 521S. Then, the second substrate W is subjected to substrate processing (film forming processing). The substrate W that has been subjected to the film forming processing is carried out of the processing chamber 2. This processing is repeated until the temperature of the stage 4 becomes stable.

[0058] According to this, the temperature of the stage 4 is stabilized from the substrate processing of the first substrate W, and substrate processing can be performed successively on a plurality of substrates W. That is, compared to the reference example shown in Fig. 4, processing for stabilizing the temperature of the stage 4 using a dummy substrate is not required.

[0059] Next, an example of the operation of the substrate processing apparatus 1 will be described with reference to Fig. 6 and Fig. 7. Fig. 6 is an example of a schematic cross-sectional view showing the state of the stage 4 in each process. Fig. 7 is a time chart showing an example of the operation of the substrate processing apparatus 1.

[0060] In the waiting step, the control unit 9 stops the rotation of the stage 4 by the stage rotation mechanism 6 (Stage stop) and causes the stage lifting mechanism 7 to place the stage 4 in a lowered position (Stage down). This brings the first contact surface 4S and the second contact surface 521S into thermal contact, and the stage 4 is cooled. The state of the stage 4 in this step is shown in FIG. 6(a).

[0061] In the substrate loading step, following on from the previous step, the control unit 9 stops the rotation of the stage 4 by the stage rotation mechanism 6 (Stage stop) and causes the stage lifting mechanism 7 to place the stage 4 in the lowered position (Stage down). Next, the substrate W is transported into the processing vessel 2 by a transport device (not shown). Then, the control unit 9 moves the lift pins 46 to the raised position (Pins up). As a result, the substrate W is supported by the lift pins 46. The transport device then retreats from within the processing vessel 2. The state of the stage 4 in this step is shown in FIG. 6(b).

[0062] In the substrate placement step, following the above-mentioned step, the control unit 9 stops the rotation of the stage 4 by the stage rotation mechanism 6 (Stage stop) and causes the stage lifting mechanism 7 to place the stage 4 in the lowered position (Stage down). Then, the control unit 9 moves the lift pins 46 to the lowered position (Pins down). As a result, the substrate W is placed on the stage 4. In addition, the first contact surface 4S and the second contact surface 521S are in thermal contact with each other, and the stage 4 and the substrate W are cooled. The state of the stage 4 in this step is shown in FIG. 6(c).

[0063] In the film forming process, the control unit 9 uses the stage lifting mechanism 7 to place the stage 4 in an up position (Stage up), and the stage rotation mechanism 6 to rotate the stage 4 (Stage rotation). The control unit 9 also controls the sputter particle emitting unit 3 to emit sputter particles. Here, the heat capacity of the stage 4 is greater than that of the substrate W, so that the substrate can be processed while suppressing a temperature rise in the substrate W. The state of the stage 4 in this process is shown in Figure 6(d).

[0064] Here, in the film forming process, the heat insulating portion 451 is disposed in the through hole 521h.

[0065] Specifically, when the stage 4 is placed in the raised position, the upper surface of the heat insulating section 451 is preferably placed in a position higher than the upper surface of the cooling plate 52. This makes it possible to suppress the amount of heat input to the cooling plate 52 via the support columns 45, even if the temperature of the stage 4 rises due to heat input from the plasma to the stage 4.

[0066] Furthermore, when the stage 4 is placed in the raised position, the lower surface of the heat insulating part 451 is preferably placed in a position lower than the lower surface of the cooling plate 52. This makes it possible to suppress the amount of heat input from the outside of the processing vessel 2 to the cooling plate 52 via the lift plate 71 and the support column 45 during the film formation process.

[0067] In the unloading step, the controller 9 stops the rotation of the stage 4 by the stage rotation mechanism 6 (Stage stop), and causes the stage lifting mechanism 7 to place the stage 4 in the lowered position (Stage down). Then, the controller 9 moves the lift pins 46 to the uppered position (Pins up). As a result, the substrate W is supported by the lift pins 46. The state of the stage 4 in this state is similar to the state shown in FIG. 6(b). Thereafter, the transport device receives the substrate W supported by the lift pins 46, and unloads it from the processing vessel 2. Then, the controller 9 moves the lift pins 46 to the lowered position (Pins down). The state of the stage 4 in this state is similar to the state shown in FIG. 6(a).

[0068] Next, the arrangement in the stage structure will be described with reference to FIGS.

[0069] 8 and 9 are schematic diagrams showing an example of a stage structure, in which a refrigerator 51, a cooling plate 52, and a stage 4 are selectively illustrated. Also, Figs. 8 and 9 are plan views of the stage structure viewed from below.

[0070] As shown in Fig. 8, two stages 4A and 4B may be provided for one refrigerator 51. In addition, in a plan view, refrigerator 51 is disposed at the center of a line connecting the centers of a plurality of through holes 521h. Moreover, the stages 4A and 4B are disposed such that the horizontal distances from the centers of the stages 4A and 4B to the center of refrigerator 51 are the same. This makes it possible to suppress the temperature difference between the stages 4A and 4B.

[0071] 9, four stages 4A to 4D may be provided for one refrigerator 51. In plan view, refrigerator 51 is disposed at the center of a line connecting the centers of a plurality of through holes 521h. The stages 4A to 4D are disposed such that the horizontal distance from the center of each stage to the center of refrigerator 51 is the same. This makes it possible to suppress the temperature difference between the stages 4A to 4D.

[0072] 10 is an enlarged view showing an example of the shape of the through-hole 521h, in which the through-hole 521h of the stage 4D shown by the dashed line in FIG.

[0073] In plan view, the direction from the center of the refrigerator 51 toward the center of the support pillar 45 is defined as the X direction, and the direction perpendicular to the X direction is defined as the Y direction. The gap between the through hole 521h and the support pillar 45 in the X direction is larger than the gap between the through hole 521h and the support pillar 45 in the Y direction. That is, the through hole 521h is an elongated hole whose longitudinal direction is the direction from the center of the through hole 521h toward the center of the refrigerator 51. This makes it possible to prevent interference between the wall surface of the through hole 521h and the support pillar 45 when the cooling plate 52 thermally expands or contracts.

[0074] The substrate processing apparatus 1 has been described above, but the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0075] W substrate 1. Substrate Processing Equipment 2. Treatment vessel 3. Sputter particle emission section Stages 4, 4A to 4D 41 Chuck electrode 42 Chuck power supply 43 Temperature Sensor 44 Heat transfer gas supply section 45 Support column 451 Insulation section 4S 1st contact surface 5. Refrigeration equipment 51 Refrigeration Machine 52 Cooling plate 521 Plate section 521h Through hole 522 Heat transfer section 521S 2nd contact surface 53 Heater 531 First inner heater 532 First outer heater 533 Second inner heater 534 Second outer heater 6 Stage rotation mechanism 61 Motor 62 Magnetic fluid seal 63 Slip Ring 7 Stage lift mechanism 71 Lifting Plate 72 Bellows 8 Heater Controller 9. Control Unit

Claims

1. A plurality of stages on which substrates are placed; a cooling plate common to a plurality of the stages; A refrigerator for cooling the cooling plate; a lifting device capable of thermally connecting or separating first contact surfaces of the plurality of stages and second contact surfaces of the cooling plate; Stage structure.

2. a plurality of support columns supporting the plurality of stages, The cooling plate has a plurality of through holes through which the plurality of support columns are inserted, respectively. The stage structure of claim 1 .

3. When viewed from above, the refrigerator is disposed at a center position of a line connecting centers of the plurality of through holes. The stage structure according to claim 2 .

4. The horizontal distance from the center of each stage to the center of the refrigerator is the same. The stage structure of claim 1 .

5. The through hole is an elongated hole having a longitudinal direction from the center of the through hole toward the center of the refrigerator. The stage structure according to claim 2 .

6. The support column has a heat insulating portion composed of a heat insulating material. The stage structure according to claim 2 .

7. When the stage is placed in a raised position, an upper surface of the heat insulating section is placed at a position higher than an upper surface of the cooling plate. The stage structure according to claim 6 .

8. When the stage is placed in the raised position, a lower surface of the heat insulating section is placed at a position lower than a lower surface of the cooling plate. The stage structure according to claim 6 .

9. A heater for heating the cooling plate is provided. The stage structure of claim 1 .

10. The heater includes an inner heater and an outer heater for each of the stages. The stage structure of claim 9.

11. The stage comprises: an inner temperature sensor for detecting a temperature in an inner region of the stage; an outer temperature sensor for detecting a temperature of an outer region of the stage; The stage structure of claim 10.

12. A stage structure according to any one of claims 1 to 11, Substrate processing equipment.

13. 1. A temperature control method for a stage structure having a first stage and a second stage on which a substrate is placed, a cooling plate common to the first stage and the second stage, a refrigerator for cooling the cooling plate, a lifting device capable of thermally connecting or isolating first contact surfaces of a plurality of the stages and a second contact surface of the cooling plate, a first temperature sensor for detecting a temperature of the first stage, a second temperature sensor for detecting a temperature of the second stage, a first heater for heating the contact surface with the first stage, and a second heater for heating the contact surface with the second stage, increasing the power supplied to the first heater or the second heater corresponding to a temperature sensor having a lower temperature out of the first temperature sensor and the second temperature sensor; Temperature control method.

14. A temperature control method for a stage structure having a stage on which a substrate is placed, a cooling plate, a refrigerator for cooling the cooling plate, a lifting device capable of thermally connecting or separating first contact surfaces of a plurality of the stages and a second contact surface of the cooling plate, and a heater for heating the cooling plate, comprising: supplying a first power to the heater to thermally couple the first contact surface and the second contact surface to each other and cooling the stage; spacing the first contact surface from the second contact surface; supplying a second power smaller than the first power to the heater to thermally connect the first contact surface and the second contact surface, and cooling the stage. Temperature control method.

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