Film deposition apparatus, control method and method for manufacturing electronic device

Abstract

To provide a technique capable of efficiently depositing a plurality of layers.SOLUTION: A film deposition apparatus includes: vapor deposition means including a plurality of vapor deposition sources arranged in a predetermined direction and for discharging a deposition material to a substrate and a plurality of shutters opening and closing the plurality of vapor deposition sources to the substrate; movement means for relatively moving the substrate and the vapor deposition means in the predetermined direction when depositing a film; and control means for controlling the opening and closing of the plurality of shutters. The plurality of vapor deposition sources include different kinds of vapor deposition materials to be discharged; and the control means controls the opening and closing of each shutter when depositing the film on the basis of the kinds of the vapor deposition materials laminated on the substrate and the lamination order thereof.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a film formation technique for a substrate. [Background technology]

[0002] In the manufacture of organic EL displays and the like, a deposition material emitted from an evaporation source adheres to a substrate to form a film on the substrate. Patent Document 1 discloses a technique for forming a film on a substrate by moving the substrate and a plurality of evaporation sources relatively. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-014616 A Summary of the Invention [Problem to be solved by the invention]

[0004] When forming a multi-layer film on a substrate, it is necessary to increase the efficiency of the work. When forming film-forming chambers on a film-by-film basis, the substrate needs to be transported to each film-forming chamber in order, which takes time. In addition, in a configuration in which the substrate and the deposition source are moved relative to each other on a film-by-film basis, the number of movements increases according to the number of films stacked, which also takes time. There are cases in which the types of films to be stacked and the stacking order are different, so it is desirable to be able to handle a variety of film formation.

[0005] The present invention provides a technique for efficiently depositing multiple layers. [Means for solving the problem]

[0006] According to the present invention, a vapor deposition means including a plurality of vapor deposition sources arranged in a predetermined direction and emitting a vapor deposition material onto a substrate, and a plurality of shutters for opening and closing the plurality of vapor deposition sources with respect to the substrate; a moving means for relatively moving the substrate and the deposition means in the predetermined direction during film formation; A control means for controlling opening and closing of the plurality of shutters; A film forming apparatus comprising: The plurality of deposition sources include a plurality of deposition sources each having a different type of deposition material to be emitted, the control means controls opening and closing of each shutter during film formation based on the types of deposition materials to be deposited on the substrate and the order of deposition of the materials. The present invention provides a film forming apparatus. Effect of the Invention

[0007] According to the present invention, a technique for efficiently forming a multi-layer film can be provided. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view illustrating a configuration of a film forming system. [Diagram 2] 1 is a plan view showing a schematic configuration of a film forming apparatus according to an embodiment of the present invention; [Diagram 3] FIG. 3 is a front view of the film forming apparatus of FIG. 2. [Figure 4] FIG. 2 is a diagram illustrating a configuration of an evaporation unit. [Diagram 5] 5A to 5C are diagrams showing examples of the manner in which a deposition material is released by opening and closing a shutter. [Figure 6] 5A to 5C are diagrams illustrating an example of movement of a deposition unit during film formation. [Figure 7] 5A to 5C are diagrams illustrating an example of movement of a deposition unit during film formation. [Figure 8] 8(A) is a diagram showing an example of a target laminated structure, (B) is a diagram showing an example of shutter control, and (C) is an enlarged view of part P1 in FIG. 8(B). [Figure 9] 9(A) is a diagram showing an example of shutter control, and (B) is an enlarged view of part P2 in FIG. 9(A). [Figure 10] 10(A) is a diagram showing an example of a target laminated structure, (B) is a diagram showing an example of shutter control, and (C) is an enlarged view of part P3 in FIG. 10(B). [Figure 11] 11A is a diagram showing an example of shutter control, and FIG. 11B is an enlarged view of part P4 in FIG. 11A. [Figure 12] 12(A) is a diagram showing an example of a target laminated structure, (B) is a diagram showing an example of shutter control, and (C) is an enlarged view of part P5 in FIG. 12(B). [Figure 13] 13A is a diagram showing an example of shutter control, and FIG. 13B is an enlarged view of part P6 in FIG. 13A. [Figure 14] 11A and 11B are diagrams illustrating another example of movement of the deposition unit during film formation. [Figure 15] 11A and 11B are diagrams illustrating another example of movement of the deposition unit during film formation. [Figure 16] FIG. 11 is a plan view illustrating a configuration of a film forming apparatus according to another embodiment. [Figure 17] FIG. 17 is a front view of the film forming apparatus of FIG. [Figure 18] 5A to 5C are diagrams illustrating an example of movement of a deposition unit during film formation. [Figure 19] 5A to 5C are diagrams illustrating an example of movement of a deposition unit during film formation. [Figure 20] 20(A) is a diagram showing an example of a target laminated structure, (B) is a diagram showing an example of shutter control, and (C) is an enlarged view of part P11 in FIG. 20(B). [Figure 21] 21A is a diagram showing an example of shutter control, and FIG. 21B is an enlarged view of part P12 in FIG. 21A. [Figure 22] 22(A) is a diagram showing an example of shutter control, and (B) is an enlarged view of part P13 in FIG. 22(A). [Figure 23] 23(A) is a diagram showing an example of shutter control, and (B) is an enlarged view of part P14 in FIG. 23(A). [Figure 24] (A) is an overall view of an organic EL display device, and (B) is a diagram showing the cross-sectional structure of one pixel. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] First Embodiment <Outline of the deposition system> FIG. 1 is a plan view showing a schematic configuration of a film formation system SY. The film formation system SY is a system that performs a film formation process on a rectangular substrate 100 carried in using a film formation apparatus 1 according to one embodiment of the present invention, and carries out the processed substrate. For example, a manufacturing line for electronic devices is formed by providing one or more film formation systems SY side by side. An example of an electronic device is a display panel for an organic electroluminescence display device for a smartphone. The film formation system SY includes a film formation apparatus 1, a carry-in chamber 60, a substrate transfer chamber 62, an unloading chamber 64, and a mask stock chamber 66. Two film formation apparatuses 1 are provided.

[0011] The carry-in chamber 60 carries in a substrate 100 on which a film is to be formed in the film forming apparatus 1. The substrate transfer chamber 62 is provided with a transfer robot 620 for transferring the substrate 100. The transfer robot 620 transfers the substrate 100 carried in the carry-in chamber 60 to the film forming apparatus 1. The transfer robot 620 also transfers the substrate 100 on which a film formation process has been completed in the film forming apparatus 1 to the carry-out chamber 64. The substrate 100 transferred to the carry-out chamber 64 by the transfer robot 620 is transferred from the carry-out chamber 64 to the outside of the film forming system SY. The mask stock chamber 66 stores a mask 101 used for film formation in the film forming apparatus 1. The mask 101 stored in the mask stock chamber 66 is transferred to the film forming apparatus 1 by the transfer robot 620.

[0012] The inside of the film formation apparatus 1 and each chamber constituting the film formation system SY is maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. In this embodiment, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state.

[0013] The control system of the film formation system SY includes a host device 200 that controls the entire system as a host computer, a control unit 43 that controls the film formation apparatus 1, and a control unit 201 that controls the substrate transfer chamber 62 (transfer robot 620, etc.), which can communicate with each other via a wired or wireless communication line. The host device 200 transmits information about the substrate 100 and instructions such as transfer timing to each control unit 43, 201, and each control unit 43, 201 controls each component based on the received instructions.

[0014] The control unit 43 is an electronic circuit that controls the entire film forming apparatus 1. The control unit 43 includes, for example, a processing unit, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit is a processor represented by a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit. The storage unit is a storage device such as a ROM, a RAM, or a HDD, and stores various control information in addition to the program executed by the processing unit. The input / output interface is an interface that transmits and receives signals between the processing unit and an external device (actuators such as motors and sensors). The communication unit is a communication device that communicates with the upper device 200 and other control units 201, etc. via a communication line. The control unit 201 is also an electronic circuit with a configuration similar to that of the control unit 43.

[0015] <Film forming equipment> Fig. 2 is a plan view showing a schematic configuration of the film forming apparatus 1. Fig. 3 is a front view of the film forming apparatus 1 of Fig. 2. Note that film forming stages 30A and 30B are omitted from Fig. 2. In the following figures, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates the up-down direction (vertical direction).

[0016] The film forming apparatus 1 can be applied to, for example, display devices (including flat panel displays, etc.) such as organic EL display devices for smartphones, electronic devices such as thin-film solar cells and organic photoelectric conversion elements (organic thin-film imaging elements), and manufacturing devices for manufacturing optical components, and is particularly applicable to manufacturing devices for manufacturing organic EL panels. The material of the substrate 100 on which deposition is performed in the film forming apparatus 1 can be appropriately selected from glass, resin, metal, etc., and glass having a resin layer such as polyimide formed thereon is preferably used. The deposition material can be an organic material, an inorganic material (metal, metal oxide, etc.), etc.

[0017] The film forming apparatus 1 includes a deposition unit 10, moving units 22 and 24, and a plurality of film forming stages 30A and 30B. The deposition unit 10, the moving units 22 and 24, and the film forming stages 30A and 30B are disposed inside a chamber 45 maintained at a vacuum. In this embodiment, the plurality of film forming stages 30A and 30B are provided at an upper portion of the chamber 45 at a distance in the Y direction, and the deposition unit 10 and the moving units 22 and 24 are provided below the deposition stages 30A and 30B. The chamber 45 is also provided with a plurality of substrate loading / unloading openings 44A and 44B for loading and unloading the substrate 100 in the X direction by a transfer robot 620.

[0018] (Deposition stage) The film formation stages 30A and 30B are stages that support the substrate 100 and the mask 101 on which a film is formed and adjust their positions. In the following description, for convenience, the substrate 100 and the mask 101 supported by the film formation stage 30A are referred to as the substrate 100A and the mask 101A, and the substrate 100 and the mask 101 supported by the film formation stage 30B are referred to as the substrate 100B and the mask 101B.

[0019] The film formation stage 30A includes a substrate support 32A, a mask support 34A, a support column 35A, and an alignment mechanism 36A.

[0020] The substrate support section 32A supports the substrate 100A carried in by the transport robot 620. In this embodiment, the substrate support section 32A supports the substrate 100A so that the short side of the substrate 100A extends in the Y direction and the long side of the substrate 100A extends in the X direction. In this embodiment, the substrate support section 32A has a claw-shaped mounting section that supports the edge of the substrate 100A from the underside of the substrate 100A. However, the substrate support section 32A may support the substrate 100A by clamping the edge of the substrate 100A, or may support the substrate 100A by adsorbing the substrate 100A with an electrostatic chuck, an adhesive chuck, or the like.

[0021] The substrate support 32A can be raised and lowered by a lifting mechanism included in the alignment mechanism 36A, and can superimpose the substrate 100A received from the transfer robot 620 on the mask 101A supported by the mask support 34A. A known technique such as a ball screw mechanism can be used for the lifting mechanism.

[0022] The mask support part 34A supports the mask 101A. The mask support part 34A is supported in the chamber 45 by pillars 35A. The mask 101A and the mask support part 34A are formed with cutout parts (not shown) for avoiding interference with the substrate support part 32A when the substrate 100A is superimposed on the mask 101A.

[0023] The alignment mechanism 36A aligns the substrate 100A and the mask 101A. The alignment mechanism 36A aligns the substrate 100A supported by the substrate support portion 32A and the mask 101A supported by the mask support portion 32 by adjusting the relative horizontal positions of the substrate support portion 32A and the mask support portion 34A.

[0024] A specific structural example of the alignment mechanism 36A can be realized by known techniques, and therefore a detailed description thereof will be omitted. As an example, the alignment mechanism 36A detects alignment marks formed on the substrate 100A and the mask 101A using a camera (not shown). Then, the alignment mechanism 36A adjusts the positional relationship between the substrate 100A and the mask 101A so that the relationship between the position of the substrate 100A calculated from the marks formed on the substrate 100A and the position of the mask 101A calculated from the marks formed on the mask 101A satisfies a predetermined condition.

[0025] After the alignment by the alignment mechanism 36A is completed, the substrate support portion 32A superimposes the substrate 100A supported by it on the mask 101A. With the substrate 100A and the mask 101A superimposed on each other, the deposition unit 10 forms a film on the substrate 100A.

[0026] The film formation stage 30B has the same configuration as the film formation stage 30A. That is, the film formation stage 30B has a substrate support part 32B, a mask support part 34B, pillars 35B, and an alignment mechanism 36B, which have the same configuration as the substrate support part 32A, the mask support part 34A, the pillars 35A, and the alignment mechanism 36A.

[0027] The film forming apparatus 1 of this embodiment is a so-called dual-stage type film forming apparatus having a plurality of film forming stages 30A and 30B. For example, while deposition is being performed on the substrate 100A in the film forming stage 30A, alignment of the substrate 100B and the mask 101B can be performed in the film forming stage 30B, and the film forming process can be efficiently performed.

[0028] (Deposition unit) Next, the deposition unit 10 will be described. FIG. 4 is a diagram for explaining the configuration of the deposition unit 10, and is a schematic diagram of the deposition unit 10 as viewed from the side (Y direction). The deposition unit 10 discharges a deposition material while moving to form a film on the substrate 100. The deposition unit 10 includes a plurality of deposition sources (evaporation sources) 11A-11D that are partitioned and housed in a case 14 that is open at the top. The plurality of deposition sources 11A-11D are arranged in a predetermined direction (X direction). Each of the deposition sources 11A-11D includes a storage section that stores the deposition material (evaporation material), a heater that heats the deposition material in the storage section, and the like.

[0029] Each of the deposition sources 11A to 11D is a line source having a plurality of outlets 11a arranged in the Y direction, and emits the deposition material upward from the outlets 11a. The emission area of ​​the deposition material from each of the deposition sources 11A to 11D covers a range equivalent to the width of the substrate 100.

[0030] In this embodiment, the deposition unit 10 includes four deposition sources 11A to 11D. However, the number of deposition sources may be five or more, or three or less. The four deposition sources 11A to 11D include a plurality of deposition sources that emit different types of deposition materials. The types of deposition materials emitted by the four deposition sources 11A to 11D are denoted as materials MA, MB, MC, and MD. In this embodiment, it is assumed that the deposition unit 10 is used as an evaporation source for an organic material. As an example, in this embodiment, the materials MA to MC are different types of deposition materials, and the materials MA and MD are the same type of deposition material. More specifically, the materials MA and MD are host materials of the same material, and the materials MB and MC are co-deposition materials (for example, the material MB is a host material, and the material MC is a dopant material). The deposition unit 10 can also be used as an evaporation source for an inorganic material.

[0031] The deposition unit 10 includes a passage forming member 13. The passage forming member 13 is a member that forms a passage through which the deposition material emitted from each of the deposition sources 11A to 11D reaches the substrate 100, and is a regulating member that regulates the emission area of ​​the deposition material from each of the deposition sources 11A to 11D relative to the substrate 100, and is also an adhesion-preventing member that prevents the deposition material from adhering to the wall surface of the chamber 45. In this embodiment, the passage forming member 13 forms three passages 13a to 13c.

[0032] The passage 13a is a passage through which the deposition material discharged from the deposition source 11A reaches the substrate 100, and is formed so as not to mix with the deposition material of the other deposition sources 11B to 11D. The passage 13b is a passage through which the deposition material discharged from the deposition sources 11B and 11C reaches the substrate 100, and is formed so as not to mix with the deposition material of the other deposition sources 11A and 11D. In the present embodiment, the deposition sources 11B and 11C share the passage 13b so that the discharge regions of the deposition materials overlap, and the deposition materials (MB, MC) discharged from these deposition sources reach the substrate 100 after mixing. However, a configuration in which separate passages are provided for these deposition sources can also be adopted. The passage 13c is a passage through which the deposition material discharged from the deposition source 11D reaches the substrate 100, and is formed so as not to mix with the deposition material of the other deposition sources 11A to 11C.

[0033] The deposition unit 10 includes a plurality of shutters 12A to 12D. The shutters 12A to 12D open and close the deposition sources 11A to 11D with respect to the substrate 100. In the present embodiment, a shutter is provided for each deposition source. The deposition source 11A is provided with a shutter 12A. The deposition source 11B is provided with a shutter 12B. The deposition source 11C is provided with a shutter 12C. The deposition source 11D is provided with a shutter 12D.

[0034] The shutter 12A is opened and closed by a motor 12a as a drive source, and in the open state, it allows the deposition material discharged from the deposition source 11A to reach the substrate 100, and in the closed state, it prevents the deposition material discharged from the deposition source 11A from reaching the substrate 100. Figure 4 shows the open state. The shutter 12A is a sliding shutter that moves parallel to the D1 direction (X direction).

[0035] The shutter 12B is opened and closed by a motor 12b as a drive source, and in the open state, it allows the deposition material discharged from the deposition source 11B to reach the substrate 100, and in the closed state, it prevents the deposition material discharged from the deposition source 11B from reaching the substrate 100. Fig. 4 shows the open state. The shutter 12B is a rotating shutter, and rotates in the D2 direction (the circumferential direction of the axis in the Y direction).

[0036] The shutter 12C is opened and closed by a motor 12c as a drive source, and in the open state, it allows the deposition material discharged from the deposition source 11C to reach the substrate 100, and in the closed state, it prevents the deposition material discharged from the deposition source 11C from reaching the substrate 100. Fig. 4 shows the open state. The shutter 12C is a rotating shutter, and rotates in the D3 direction (the circumferential direction of the axis in the Y direction).

[0037] The shutter 12D is opened and closed by a motor 12d as a drive source, and in the open state, it allows the deposition material discharged from the deposition source 11D to reach the substrate 100, and in the closed state, it prevents the deposition material discharged from the deposition source 11D from reaching the substrate 100. Figure 4 shows the open state. The shutter 12D is a sliding shutter that moves parallel to the D4 direction (X direction).

[0038] In this embodiment, a shutter is provided for each deposition source, so that it is possible to control the arrival and blocking of the deposition material at the substrate 100 for each deposition source. However, for example, in this embodiment, since it is intended that the deposition materials of the deposition sources 11B and 11C are mixed and then deposited on the substrate 100, a single common shutter may be provided instead of individual shutters.

[0039] In addition, in this embodiment, shutters with different drive systems are provided, with the shutters 12A and 12D being of a sliding type and the shutters 12B and 12C being of a rotating type. Deposition material adheres to the shutters 12A to 12D. In opening and closing operations, the sliding type shutter is less likely to cause the deposited deposition material to fall off than the rotating type shutter. For shutters that are opened and closed frequently, the sliding type shutter is advantageous. For example, in this embodiment, it is assumed that the shutters 12A and 12D are opened and closed frequently, and therefore these shutters are made to be of a sliding type.

[0040] However, all of the shutters 12A to 12D may be pivotable shutters, or all of the shutters 12A to 12D may be slide shutters.

[0041] 5 shows an example of the release of the deposition material by opening and closing the shutters 12A to 12D. State ST1 shows a state in which all of the shutters 12A to 12D are open. The deposition materials MA and MD discharged from the deposition sources 11A and 11D are deposited on the substrate 100, and a mixture of the deposition materials MB and MC discharged from the deposition sources 11B and 11C is deposited on the substrate 100. State ST2 shows a state in which all of the shutters 12A to 12D are closed. No deposition material reaches the substrate 100.

[0042] In state ST3, the shutters 12B to 12D are open, and the shutter 12A is closed. A deposition material MD discharged from the deposition source 11D is deposited on the substrate 100, and a mixture of deposition materials MB and MC discharged from the deposition sources 11B and 11C is deposited on the substrate 100. In state ST4, the shutters 12A to 12C are open, and the shutter 12D is closed. A deposition material MA discharged from the deposition source 11A is deposited on the substrate 100, and a mixture of deposition materials MB and MC discharged from the deposition sources 11B and 11C is deposited on the substrate 100.

[0043] In state ST5, the shutters 12B and 12C are open, and the shutters 12A and 12B are closed. A mixture of deposition materials MB and MC discharged from the deposition sources 11B and 11C is deposited on the substrate 100. In state ST6, the shutters 12A, 12B, and 12D are open, and the shutter 12C is closed. On the substrate 100, deposition materials MA and MD discharged from the deposition sources 11A and 11D are deposited, and deposition material MB discharged from the deposition source 11B is deposited.

[0044] (Mobile unit) 2 and 3 again, the film formation apparatus 1 includes a moving unit 22 that moves the deposition unit 10 in the X direction relative to the substrate 100 during film formation. The film formation apparatus 1 also includes a moving unit 24 that moves the deposition unit 10 and the moving unit 22 in the Y direction between the film formation stages 30A and 30B.

[0045] The moving unit 22 includes, as components provided in the deposition unit 10, a motor 221, a pinion 222 attached to a shaft member rotated by the motor 221, and a guide member 223. The moving unit 22 also includes a frame member 224, a rack 225 formed on an upper surface of the frame member 224 and meshing with the pinion 222, and a guide rail 226 along which the guide member 223 slides. The rack 225 and the guide rail 226 extend in the X direction. The guide member 223 engages with the guide rail 226 and slides on the guide rail 226 in the X direction. The pinion 222 rotated by the drive of the motor 221 meshes with the rack 225, so that the deposition unit 10 can reciprocate in the X direction along the guide rail 226. The moving range of the deposition unit 10 covers the entire length of the substrate 100.

[0046] The moving unit 24 includes two support members 241A and 241B extending in the Y direction and spaced apart from each other in the X direction. The two support members 241A and 241B support the short sides of the frame member 224 of the moving unit 22. The moving unit 24 includes a driving mechanism such as a motor and a rack-and-pinion mechanism (not shown), and moves the frame member 224 in the Y direction relative to the two support members 241A and 241B, thereby reciprocating the deposition unit 10 and the moving unit 22 in the Y direction.

[0047] <Film formation> An example of control of the film forming apparatus 1 executed by the control unit 43 will be described. Fig. 6 and Fig. 7 are diagrams showing an example of movement of the deposition unit 10 during film formation. In each diagram, arrows X1 and X2 indicate one direction and the opposite direction in the X direction, and arrows Y1 and Y2 indicate one direction and the opposite direction in the Y direction.

[0048] 6 illustrates a state ST11 in which the deposition unit 10 is located at an initial position. At the initial position, the deposition unit 10 is aligned in the X direction with a substrate 100A supported by a film formation stage 30A in a plan view.

[0049] Deposition of a film on the substrate 100A is started. The open / close states of the shutters 12A to 12D, which are closed, are individually set, and the deposition unit 10 is moved in the X1 direction by the moving unit 22 as shown in state ST12. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is released onto the substrate 100A, whereby the deposition material is deposited on the substrate 100A.

[0050] Next, the open / closed states of the shutters 12A to 12D are set individually, and the deposition unit 10 is moved in the X2 direction by the moving unit 22 as shown in state ST13. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is discharged onto the substrate 100A, so that the deposition material is formed into a film on the substrate 100A. After the movement, all of the shutters 12A to 12D are closed.

[0051] In this manner, in this embodiment, by moving the deposition unit 10 back and forth in the X direction relative to the substrate 100A, it is possible to form a film on the substrate 100A twice.

[0052] Next, the process proceeds to a film formation operation for the substrate 100B supported by the film formation stage 30B. As shown in state ST14, the deposition unit 10 and the moving unit 22 are moved in the Y1 direction by the moving unit 24. The deposition unit 10 is moved to a position aligned in the X direction with the substrate 100B supported by the film formation stage 30B in a plan view.

[0053] Film formation on the substrate 100B is started. After individually setting the open / closed states of the shutters 12A to 12D that are closed, the deposition unit 10 is moved in the X1 direction by the moving unit 22 as shown in state ST15. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is released onto the substrate 100B, so that the deposition material is deposited on the substrate 100B. In parallel, the substrate 100A on which a film has been deposited can be replaced with a second substrate 100A on the deposition stage 30A.

[0054] Next, the open / closed states of the shutters 12A to 12D are set individually, and the deposition unit 10 is moved in the X2 direction by the moving unit 22 as shown in state ST16. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is discharged onto the substrate 100B, so that the deposition material is deposited on the substrate 100B. After the movement, all of the shutters 12A to 12D are closed.

[0055] In this manner, in this embodiment, by moving the deposition unit 10 back and forth in the X direction relative to the substrate 100B, it is possible to perform film formation twice on the substrate 100B.

[0056] Next, the process proceeds to a film formation operation on the substrate 100A supported by the film formation stage 30A. As shown in state ST17, the deposition unit 10 and the deposition unit 22 are moved in the Y2 direction by the moving unit 24. The deposition unit 10 returns to the initial position.

[0057] Film formation on the second substrate 100A is started. After individually setting the open / closed states of the shutters 12A to 12D that are closed, the deposition unit 10 is moved in the X1 direction by the moving unit 22 as shown in state ST18. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is released onto the substrate 100A, so that the deposition material is deposited on the substrate 100A. In parallel, the substrate 100B on which the film has been deposited can be replaced with the second substrate 100B on the deposition stage 30B.

[0058] State ST18 is the same as state ST 12. After that, films are formed on the substrate 100 alternately at the film formation stage 30A and the film formation stage 30B in a similar procedure.

[0059] (Shutter opening / closing control and film deposition example) An example of controlling the opening and closing of the shutters 12A to 12D and film formation on the substrate 100 will be described. The control unit 43 controls the opening and closing of each of the shutters 12A to 12D during film formation based on the types of deposition materials to be deposited on the substrate 100 and their deposition order. When performing film formation twice on the substrate 100 by reciprocating the deposition unit 10 in the X direction relative to the substrate 100 as illustrated in Figs. 6 and 7, the control unit 43 controls the opening and closing of each of the shutters 12A to 12D during film formation based on the moving direction of the deposition unit 10 (X1 direction or X2 direction).

[0060] A control example will be described with reference to Fig. 8(A) to Fig. 9(B). Fig. 8(A) illustrates a target stacked layer structure for film formation control on a substrate 100. Information on this target stacked layer structure is, for example, instructed from the upper device 200 to the control unit 43, and the control unit 43 controls the opening and closing of the shutters 12A to 12D based on this information. The stacking order of the target stacked layer structure in Fig. 8(A) is, from the substrate 100 side, a film of deposition material MA, a mixed film of deposition materials MB and MC, a film of deposition material MA, a film of deposition material MA, a mixed film of deposition materials MB and MC, and a film of deposition material MA.

[0061] The case of performing the film formation in Fig. 8(A) will be described by taking as an example the film formation operation on the substrate 100A described in states ST11 to ST13 in Fig. 6. The target stacked structure in Fig. 8(A) is a five-layer structure when classified by the film formation material (there is a location where two layers of deposition material MA are continuous), but is a six-layer structure when classified by the number of film formations. Here, three layers are formed in the first film formation in state ST12, and three layers are formed in the second film formation in state ST13.

[0062] At the initial position in state ST11, the control unit 43 sets the shutters 12A to 12D to open or close. The movement direction of the deposition unit 10 in the first film formation is the X1 direction. Therefore, the deposition source 11A side is the leading side in the relative movement direction (X1 direction) with respect to the substrate 100A. In the first film formation in state ST12, it is sufficient that a film of the deposition material MA, a mixed film of the deposition materials MB and MC, and a film of the deposition material MA are formed in this order from the substrate 100A side. Therefore, it is sufficient that the deposition material MA discharged from the deposition source 11A, the deposition materials MB and MC discharged from the deposition sources 11B and 11C, and the deposition material MD (the deposition material MA in this embodiment) discharged from the deposition source 11D are adhered to the substrate 100A in this order. Therefore, all of the shutters 12A to 12D are set to the open state.

[0063] Fig. 8(B) shows a state ST12 during the first film formation, and Fig. 8(C) is an enlarged view of part P1 in Fig. 8(B). All of the shutters 12A to 12D are set to open states, and the deposition unit 10 moves in the X1 direction. Since the deposition source 11A is located at the front in the movement direction, a film of the deposition material MA is formed on the substrate 100A first, and a mixed film of the deposition materials MB and MC from the deposition sources 11B and 11C is formed thereon. A film of the deposition material MD (MA) from the deposition source 11D located at the rearmost in the movement direction is further formed thereon. In this manner, the first three layers of films are formed on the substrate 100A.

[0064] Next, the state shifts to the second film formation in state ST13. The movement direction of the deposition unit 10 in the second film formation is the X2 direction. Therefore, the deposition source 11D side is the leading side in the relative movement direction (X2 direction) with respect to the substrate 100A. In the second film formation, it is sufficient that a film of the deposition material MA, a mixed film of the deposition materials MB and MC, and a film of the deposition material MA are formed in this order from the substrate 100A side. Therefore, it is sufficient that the deposition material MD (MA) discharged from the deposition source 11D, the deposition materials MB and MC discharged from the deposition sources 11B and 11C, and the deposition material MA discharged from the deposition source 11A are adhered to the substrate 100A in this order. Therefore, all of the shutters 12A to 12D are set to the open state.

[0065] FIG. 9(A) shows a state during the second film formation in state ST13, and FIG. 9(B) is an enlarged view of part P2 in FIG. 9(A). All of the shutters 12A to 12D are set to open states, and the deposition unit 10 moves in the X2 direction. Since the deposition source 11D is located at the front in the movement direction, a film of the deposition material MD (MA) is formed on the substrate 100A first, and a mixed film of the deposition materials MB and MC from the deposition sources 11B and 11C is formed thereon. A film of the deposition material MA from the deposition source 11A located at the rearmost position in the movement direction is further formed thereon. In this way, the remaining three layers of films are formed on the substrate 100A. With the above, the film formation on the substrate 100A is completed.

[0066] Another control example will be described with reference to Figures 10(A) to 11(B). Figure 10(A) illustrates a target layered structure for film formation control on a substrate 100, in which the layered order from the substrate 100 side is a film of a deposition material MA, a mixed film of deposition materials MB and MC, a film of a deposition material MA, and a mixed film of deposition materials MB and MC.

[0067] The film formation of Fig. 10(A) will be described by taking the film formation operation for the substrate 100A described in states ST11 to ST13 of Fig. 6 as an example. The target stacked structure of Fig. 10(A) is a four-layer structure. Therefore, two layers are formed in the first film formation in state ST12, and two layers are formed in the second film formation in state ST13.

[0068] At the initial position in state ST11, the control unit 43 sets the shutters 12A to 12D to open or close. The movement direction of the deposition unit 10 in the first film formation is the X1 direction. Therefore, the deposition source 11A side is the leading side in the relative movement direction (X1 direction) with respect to the substrate 100A. In the first film formation in state ST12, it is sufficient that a film of the deposition material MA and a mixed film of the deposition materials MB and MC are formed in this order from the substrate 100A side. Therefore, it is sufficient that the deposition material MA discharged from the deposition source 11A, and the deposition materials MB and MC discharged from the deposition sources 11B and 11C are attached to the substrate 100A in this order. Therefore, the shutters 12A to 12C are set to the open state, and the shutter 12D is set to the closed state.

[0069] Fig. 10(B) shows a state ST12 during the first film formation, and Fig. 10(C) is an enlarged view of part P3 in Fig. 10(B). The shutters 12A to 12C are set to the open state, and the shutter 12D is set to the closed state, and the deposition unit 10 moves in the X1 direction. Since the deposition source 11A is positioned at the front in the moving direction, a film of the deposition material MA is formed on the substrate 100A first, and a mixed film of the deposition materials MB and MC from the deposition sources 11B and 11C is formed thereon. In this way, the first two layers of films are formed on the substrate 100A.

[0070] Next, the state shifts to the second film formation in state ST13. The movement direction of the deposition unit 10 in the second film formation is the X2 direction. Therefore, the deposition source 11D side is the leading side in the relative movement direction (X2 direction) with respect to the substrate 100A. In the second film formation, it is sufficient that a film of the deposition material MA and a mixed film of the deposition materials MB and MC are formed in this order from the substrate 100A side. Therefore, it is sufficient that the deposition material MD (MA) discharged from the deposition source 11D, and the deposition materials MB and MC discharged from the deposition sources 11B and 11C are attached to the substrate 100A in this order. Then, the shutters 12B to 12D are set to the open state, and the shutter 12A is set to the closed state.

[0071] Fig. 11(A) shows a state during the second film formation in state ST13, and Fig. 11(B) is an enlarged view of part P4 in Fig. 11(A). The shutters 12B to 12D are set to open states, and the shutter 12A is set to close states, and the deposition unit 10 moves in the X2 direction. Since the deposition source 11D is positioned at the front in the moving direction, a film of the deposition material MD (MA) is formed on the substrate 100A first, and a mixed film of the deposition materials MB and MC from the deposition sources 11B and 11C is formed thereon. In this way, the remaining two layers of films are formed on the substrate 100A. This completes the film formation on the substrate 100A.

[0072] Another control example will be described with reference to Fig. 12(A) to Fig. 13(B). Fig. 12(A) illustrates a target layered structure for film formation control on a substrate 100, in which the layered order from the substrate 100 side is a film of a deposition material MA, a mixed film of deposition materials MB and MC, and a mixed film of deposition materials MB and MC.

[0073] The case of performing the film formation in Fig. 12(A) will be described by taking the film formation operation for the substrate 100A described in states ST11 to ST13 in Fig. 6 as an example. The target stacked structure in Fig. 12(A) is a three-layer structure. Therefore, two layers are formed in the first film formation in state ST12, and one layer is formed in the second film formation in state ST13.

[0074] At the initial position in state ST11, the control unit 43 sets the shutters 12A to 12D to open or close. The movement direction of the deposition unit 10 in the first film formation is the X1 direction. Therefore, the deposition source 11A side is the leading side in the relative movement direction (X1 direction) with respect to the substrate 100A. In the first film formation in state ST12, it is sufficient that a film of the deposition material MA and a mixed film of the deposition materials MB and MC are formed in this order from the substrate 100A side. Therefore, it is sufficient that the deposition material MA discharged from the deposition source 11A, and the deposition materials MB and MC discharged from the deposition sources 11B and 11C are attached to the substrate 100A in this order. Therefore, the shutters 12A to 12C are set to the open state, and the shutter 12D is set to the closed state.

[0075] Fig. 12(B) shows a state ST12 during the first film formation, and Fig. 12(C) is an enlarged view of part P5 in Fig. 12(B). The shutters 12A to 12C are set to the open state, and the shutter 12D is set to the closed state, and the deposition unit 10 moves in the X1 direction. Since the deposition source 11A is positioned at the front in the moving direction, a film of the deposition material MA is formed on the substrate 100A first, and a mixed film of the deposition materials MB and MC from the deposition sources 11B and 11C is formed thereon. In this way, the first two layers of films are formed on the substrate 100A.

[0076] Next, the state transitions to the second film formation in state ST13. The movement direction of the deposition unit 10 in the second film formation is the X2 direction. Therefore, the deposition source 11D side is the leading side in the relative movement direction (X2 direction) with respect to the substrate 100A. In the second film formation, it is sufficient to form a mixed film of the deposition materials MB and MC. Therefore, it is sufficient for the deposition materials MB and MC discharged from the deposition sources 11B and 11C to adhere to the substrate 100A. Therefore, the shutters 12B and 12C are set to the open state, and the shutters 12A and 12D are set to the closed state.

[0077] Fig. 13(A) shows a state during the second film formation in state ST13, and Fig. 13(B) is an enlarged view of part P6 in Fig. 13(A). The shutters 12B and 12C are set to an open state, and the shutters 12A and 12D are set to a closed state, and the deposition unit 10 moves in the X2 direction. A mixed film of deposition materials MB and MC from deposition sources 11B and 11C is deposited on the substrate 100A. In this way, the remaining one layer of film is deposited on the substrate 100A. This completes the deposition on the substrate 100A.

[0078] In this manner, in this embodiment, by controlling the opening and closing of the shutters 12A to 12D, it is possible to form multiple layers in one film formation operation while also being able to accommodate the type and lamination order of the target film, and thus to accommodate a variety of film formation. Therefore, multiple layers can be formed efficiently.

[0079] Second Embodiment During film formation, it is only necessary that the substrate 100 and the deposition unit 10 are relatively movable in the arrangement direction (X direction) of the deposition sources 11A to 11D. In the first embodiment, during film formation, the position of the substrate 100 is fixed and the deposition unit 10 is moved in the X direction. However, the position of the deposition unit 10 may be fixed and the substrate 100 may be moved in the X direction. Alternatively, both the deposition unit 10 and the substrate 100 may be moved in opposite directions in the X direction.

[0080] <Third embodiment> In the first embodiment, the deposition unit 10 is moved back and forth in the X direction relative to the substrate 100 to perform two film formations. However, the deposition unit 10 may be moved in the X1 direction or the X2 direction relative to the substrate 100 to perform one film formation. Figures 14 and 15 are diagrams showing other examples of the movement of the deposition unit 10 during film formation.

[0081] 14 shows a state in which the deposition unit 10 is located at the initial position. Film formation on the substrate 100A starts. The open / closed states of the shutters 12A-12D, which are closed, are individually set, and the deposition unit 10 is moved in the X1 direction by the moving unit 22 as shown in state ST22. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is released onto the substrate 100A, thereby forming a film of the deposition material on the substrate 100A. After the movement, the shutters 12A-12D are all closed. Film formation on the substrate 100A is then completed.

[0082] Next, the process proceeds to a film formation operation for the substrate 100B supported by the film formation stage 30B. As shown in state ST23, the deposition unit 10 and the moving unit 22 are moved in the Y1 direction by the moving unit 24. The deposition unit 10 is moved to a position aligned in the X direction with the substrate 100B supported by the film formation stage 30B in a plan view.

[0083] Film formation on the substrate 100B is started. After individually setting the open / closed states of the shutters 12A-12D, which are in the closed state, the deposition unit 10 is moved in the X2 direction by the moving unit 22 as shown in state ST24. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is released onto the substrate 100B, so that the deposition material is deposited on the substrate 100B. In parallel, the substrate 100A on which a film has been deposited can be replaced with a second substrate 100A on the deposition stage 30A. After the movement, the shutters 12A-12D are all closed. This completes the film formation on the substrate 100B.

[0084] Next, the process proceeds to a film formation operation on the substrate 100A supported by the film formation stage 30A. As shown in state ST25, the deposition unit 10 and the deposition unit 22 are moved in the Y2 direction by the moving unit 24. The deposition unit 10 returns to the initial position.

[0085] Next, after individually setting the open / closed states of the shutters 12A-12D, the deposition unit 10 is moved in the X1 direction by the moving unit 22 as shown in state ST26. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is discharged onto the substrate 100A, so that the deposition material is deposited on the substrate 100A. In parallel, the substrate 100B on which the deposition has been completed can be replaced with a second substrate 100B at the deposition stage 30B. After the movement, the shutters 12A-12D are all closed.

[0086] State ST26 is the same as state ST22. After that, films are formed on the substrate 100 alternately at the film formation stage 30A and the film formation stage 30B in a similar procedure.

[0087] <Fourth embodiment> The deposition unit 10 may be configured to move in a direction crossing the substrates 100A and 100B during film formation. Fig. 16 is a plan view that illustrates a configuration of a film formation apparatus 1 in this embodiment, and Fig. 17 is a front view of the film formation apparatus 1 in Fig. 16. Hereinafter, configurations that are substantially the same as those in the first embodiment are denoted by the same reference numerals and descriptions thereof are omitted, and different configurations will be described.

[0088] In this embodiment, the deposition unit 10 is moved only in the Y direction by the moving unit 22, and there is no configuration corresponding to the moving unit 24 of the first embodiment.

[0089] The deposition unit 10 extends in the X direction, and the deposition sources 11A to 11D are arranged in the Y direction. Although not shown in Fig. 16 and Fig. 17, the deposition sources 11A to 11D are provided with the shutters 12A to 12D described in the first embodiment, and with respect to the opening and closing directions, the shutters 12A and 12D move in parallel in the Y direction, and the shutters 12B and 12C rotate in the circumferential direction about an axis in the X direction.

[0090] 16 and 17 show a state in which the deposition unit 10 is located at the initial position. In the present embodiment, the initial position of the deposition unit 10 is a position between the deposition stage 30A and the deposition stage 30B in the Y direction (a position between the substrate 100A and the substrate 100B).

[0091] <Control example> 18 and 19 are diagrams illustrating an example of the movement of the deposition unit 10 during film formation. In each diagram, arrows Y11 and Y12 indicate one direction and the opposite direction in the Y direction.

[0092] 18 illustrates a state in which the deposition unit 10 is located at an initial position. At the initial position, the deposition unit 10 is located between the substrate 100A supported by the deposition stage 30A and the substrate 100B supported by the deposition stage 30B so as to be aligned with these substrates in a plan view.

[0093] Deposition of a film on the substrate 100B is started. After the shutters 12A to 12D, which are in the closed state, are individually set to open or closed states, the deposition unit 10 is moved in the Y11 direction by the moving unit 22 as shown in state ST32. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is released onto the substrate 100B, whereby the deposition material is deposited on the substrate 100B.

[0094] Next, after individually setting the open / closed states of the shutters 12A to 12D, the deposition unit 10 is moved in the Y12 direction by the moving unit 22 as shown in state ST33. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is discharged onto the substrate 100B, so that the deposition material is deposited on the substrate 100B. When the deposition unit 10 returns to its initial position, the shutters 12A to 12D are all closed.

[0095] In this manner, in this embodiment, by moving the deposition unit 10 back and forth in the Y direction relative to the substrate 100B, it is possible to perform film formation on the substrate 100B twice.

[0096] Next, deposition on the substrate 100A is started. The open / closed states of the shutters 12A to 12D, which are closed, are individually set, and the deposition unit 10 is moved in the Y12 direction by the moving unit 22 as shown in state ST34. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is released onto the substrate 100A, whereby the deposition material is deposited on the substrate 100A.

[0097] Next, after individually setting the open / closed states of the shutters 12A to 12D, the moving unit 22 moves the deposition unit 10 in the Y11 direction as shown in state ST35. While the deposition unit 10 moves relative to the substrate 100A, the deposition material is discharged onto the substrate 100A, so that the deposition material is deposited on the substrate 100A. In parallel, the deposition stage 30B can replace the substrate 100B on which the film has been deposited with a second substrate 100B. When the deposition unit 10 returns to its initial position, all of the shutters 12A to 12D are closed.

[0098] In this manner, in this embodiment, by moving the deposition unit 10 back and forth in the Y direction relative to the substrate 100A, it is possible to perform film formation twice on the substrate 100A.

[0099] Next, deposition on the second substrate 100B is started. The open / close states of the shutters 12A to 12D, which are closed, are individually set, and the deposition unit 10 is moved in the Y11 direction by the moving unit 22, as shown in state ST36. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is released onto the substrate 100B, whereby the deposition material is deposited on the substrate 100B.

[0100] Next, after individually setting the open / closed states of the shutters 12A to 12D, the moving unit 22 moves the deposition unit 10 in the Y12 direction as shown in state ST37. While the deposition unit 10 moves relative to the substrate 100B, the deposition material is discharged onto the substrate 100B, so that the deposition material is deposited on the substrate 100B. In parallel, the deposition stage 30A can replace the substrate 100A on which the film has been deposited with a second substrate 100A. When the deposition unit 10 returns to its initial position, the shutters 12A to 12D are all closed.

[0101] State ST37 is the same as state ST33. After that, films are formed on the substrate 100 alternately at the film formation stage 30B and the film formation stage 30A in the same manner.

[0102] Next, an example of opening / closing control of the shutters 12A to 12D and film formation on the substrate 100 will be described. Fig. 20(A) illustrates a target layered structure for film formation control on the substrate 100. The layering order of the target layered structure in Fig. 20(A) is, from the substrate 100 side, a film of deposition material MA and a mixed film of deposition materials MB and MC.

[0103] The film formation of Fig. 20(A) will be described by taking the film formation operation for the substrate 100B and states ST34-ST35 described in Fig. 18-19 as an example. The target stacked structure in Fig. 20(A) is a two-layer structure. Therefore, one layer is formed in the first film formation, and the remaining layer is formed in the second film formation.

[0104] First, a film is formed on the substrate 100B. At the initial position in state ST31, the control unit 43 sets the shutters 12A to 12D to open or close. The movement direction of the deposition unit 10 in the first film formation on the substrate 100B is the Y11 direction. Therefore, the deposition source 11A side is the leading side in the relative movement direction (Y11 direction) with respect to the substrate 100B. In the first film formation in state ST32, it is sufficient to form a film of the deposition material MA. Therefore, it is sufficient for the deposition material MA discharged from the deposition source 11A to adhere to the substrate 100B. Therefore, only the shutter 12A is set to the open state, and the remaining shutters 12B to 12D are set to the closed state.

[0105] Fig. 20(B) shows a state during the first deposition in state ST32, and Fig. 20(C) is an enlarged view of part P11 in Fig. 20(B). Of the shutters 12A to 12D, only the shutter 12A is set in an open state, and the deposition unit 10 moves in the Y11 direction. A film of the deposition material MA is deposited on the substrate 100B.

[0106] Next, the state transitions to the second film formation in state ST33. The movement direction of the deposition unit 10 in the second film formation is the Y12 direction. Therefore, the deposition source 11D side is the leading side in the relative movement direction (Y12 direction) with respect to the substrate 100B. In the second film formation, it is sufficient to form a mixed film of the deposition materials MB and MC. Therefore, it is sufficient for the deposition materials MB and MC discharged from the deposition sources 11B and 11C to adhere to the substrate 100B. Therefore, the shutters 12B and 12C are set to the open state, and the remaining shutters 12A and 12D are set to the closed state.

[0107] Fig. 21(A) shows a state during the second film formation in state ST33, and Fig. 21(B) is an enlarged view of part P12 in Fig. 21(A). Of the shutters 12A to 12D, the shutters 12B and 12C are set in an open state, and the deposition unit 10 moves in the Y12 direction. On the substrate 100B, a mixed film of deposition materials MB and MC from the deposition sources 11B and 11C is deposited on the film of deposition material MA deposited in the first deposition. In this way, the remaining one layer of film is deposited on the substrate 100B. This completes the film formation on the substrate 100B.

[0108] Next, the process proceeds to film formation on the substrate 100A. At the initial position of state ST33, the control unit 43 sets the shutters 12A to 12D to open or close. The movement direction of the deposition unit 10 in the first film formation on the substrate 100A is the Y12 direction. Therefore, the deposition source 11D side is the leading side in the relative movement direction (Y12 direction) with respect to the substrate 100A. In the first film formation in state ST34, it is sufficient to form a film of the deposition material MA. Therefore, it is sufficient for the deposition material MA discharged from the deposition source 11D to adhere to the substrate 100A. Therefore, only the shutter 12D is set to the open state, and the remaining shutters 12A to 12C are set to the closed state.

[0109] Fig. 22(A) shows a state during the first deposition in state ST34, and Fig. 22(B) is an enlarged view of part P13 in Fig. 22(A). Of the shutters 12A to 12D, only the shutter 12D is set in an open state, and the deposition unit 10 moves in the Y12 direction. A film of the deposition material MD (MA) is deposited on the substrate 100A.

[0110] Next, the state transitions to the second film formation in state ST35. The movement direction of the deposition unit 10 in the second film formation is the Y11 direction. Therefore, the deposition source 11A side is the leading side in the relative movement direction (Y11 direction) with respect to the substrate 100A. In the second film formation, it is sufficient to form a mixed film of the deposition materials MB and MC. Therefore, it is sufficient for the deposition materials MB and MC discharged from the deposition sources 11B and 11C to adhere to the substrate 100A. Therefore, the shutters 12B and 12C are set to the open state, and the remaining shutters 12A and 12D are set to the closed state.

[0111] Fig. 22(A) shows a state during the second film formation in state ST33, and Fig. 22(B) is an enlarged view of part P14 in Fig. 22(A). Of the shutters 12A-12D, the shutters 12B and 12C are set in an open state, and the deposition unit 10 moves in the Y12 direction. On the substrate 100A, a mixed film of deposition materials MB and MC from the deposition sources 11B and 11C is deposited on the film of deposition material MA deposited in the first deposition. In this way, the remaining one layer of film is deposited on the substrate 100A. With the above, the deposition on the substrate 100A is also completed.

[0112] In this manner, in this embodiment, continuous film formation is possible on the substrate 100A and the substrate 100B. The above example is an example in which films having the same layered structure are formed on the substrate 100A and the substrate 100B, but by controlling the opening and closing of the shutters 12A to 12D, it is also possible to continuously form films having different layered structures on the substrate 100A and the substrate 100B.

[0113] In the present embodiment, the initial position of the vapor deposition unit 10 is set to a position between the film formation stage 30A and the film formation stage 30B in the Y direction (a position between the substrate 100A and the substrate 100B). In addition to this position, the initial position of the vapor deposition unit 10 may be set to a position to the left of the film formation stage 30A or to the right of the film formation stage 30B. However, by setting the initial position of the vapor deposition unit 10 to a position between the film formation stage 30A and the film formation stage 30B as in the present embodiment, when films are successively formed on the substrates 100A and 100B, films having the same laminated structure can be formed on each substrate by making one round trip of the vapor deposition unit 10, and therefore the film formation can be performed in a shorter time.

[0114] <Fifth embodiment> Next, an example of a method for manufacturing an electronic device will be described. Below, as an example of an electronic device, the configuration and manufacturing method of an organic EL display device will be illustrated. In this example, a plurality of film formation systems SY illustrated in FIG. 1 are provided on a manufacturing line.

[0115] First, the organic EL display device to be manufactured will be described. Fig. 24(A) is an overall view of an organic EL display device 50, and Fig. 24(B) is a diagram showing the cross-sectional structure of one pixel.

[0116] 24(A), a plurality of pixels 52, each including a plurality of light-emitting elements, are arranged in a matrix in a display region 51 of an organic EL display device 50. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.

[0117] The pixel here refers to the smallest unit that allows a desired color to be displayed in the display region 51. In the case of a color organic EL display device, the pixel 52 is configured by a combination of a plurality of sub-pixels, a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit light different from each other. The pixel 52 is often configured by a combination of three types of sub-pixels, a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 needs to include at least one type of sub-pixel, and preferably includes two or more types of sub-pixels, and more preferably includes three or more types of sub-pixels. The sub-pixels that configure the pixel 52 may be, for example, a combination of four types of sub-pixels, a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0118] Fig. 24(B) is a partial cross-sectional schematic diagram taken along the line AB in Fig. 24(A). A pixel 52 has a plurality of sub-pixels on a substrate 53, each of which is composed of an organic EL element having a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue colors, respectively.

[0119] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common for the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. That is, as shown in FIG. 24(B), the hole transport layer 55 may be formed as a common layer for the plurality of sub-pixel regions, and the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region on top of the hole transport layer 55, and the electron transport layer 57 and the second electrode 58 may be formed as a common layer for the plurality of sub-pixel regions on top of the hole transport layer 55.

[0120] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0121] 24(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but they may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. In addition, a hole injection layer having an energy band structure that allows holes to be smoothly injected from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0122] Each of the red layer 56R, the green layer 56G, and the blue layer 56B may be formed of a single light-emitting layer, or may be formed by laminating a plurality of layers. For example, the red layer 56R may be configured of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron block layer. Alternatively, the lower layer may be formed of a red light-emitting layer and the upper layer being an electron transport layer or a hole block layer. By providing a layer below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0123] Although the example of the red layer 56R is shown here, the same structure may be adopted for the green layer 56G and the blue layer 56B. The number of layers may be two or more. Furthermore, layers of different materials may be laminated, such as a light-emitting layer and an electron blocking layer, or layers of the same material may be laminated, such as two or more light-emitting layers.

[0124] Next, a specific example of a method for manufacturing an organic EL display device will be described. Here, it is assumed that the red layer 56R is made up of two layers, a lower layer 56R1 and an upper layer 56R2, and the green layer 56G and the blue layer 56B are made up of a single light-emitting layer.

[0125] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and the substrate 53 may be made of glass, plastic, metal, etc. In this embodiment, a substrate in which a polyimide film is laminated on a glass substrate is used as the substrate 53.

[0126] A resin layer such as acrylic or polyimide is coated by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by lithography so that an opening is formed in the portion where the first electrode 54 is formed, to form an insulating layer 59. This opening corresponds to a light-emitting region where the light-emitting element actually emits light. In this embodiment, the large substrate is processed up to the formation of the insulating layer 59, and after the insulating layer 59 is formed, a division step is performed to divide the substrate 53.

[0127] The substrate 53 with the patterned insulating layer 59 is carried into the first film forming apparatus 1, and a hole transport layer 55 is formed as a common layer on the first electrodes 54 in the display regions. The hole transport layer 55 is formed using a mask having an opening for each display region 51 which will eventually become the panel portion of each organic EL display device.

[0128] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into the second film forming apparatus 1. The substrate 53 and the mask are aligned, and the substrate is placed on the mask. The red layer 56R is formed on the hole transport layer 55 in a portion of the substrate 53 where the red-emitting element is to be arranged (a region where a red subpixel is to be formed). Here, the mask used in the second film forming chamber is a high-definition mask in which openings are formed only in a plurality of regions that will become red subpixels among a plurality of regions on the substrate 53 that will become subpixels of the organic EL display device. As a result, the red layer 56R including the red light-emitting layer is formed only in a region that will become a red subpixel among a plurality of regions on the substrate 53 that will become subpixels. In other words, the red layer 56R is selectively formed in a region that will become a red subpixel, without being formed in a region that will become a blue subpixel or a green subpixel among a plurality of regions on the substrate 53 that will become subpixels.

[0129] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film formation apparatus 1, and further the blue layer 56B is formed in the fourth film formation apparatus 1. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed over the entire display area 51 in the fifth film formation apparatus 1. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

[0130] The substrate on which the electron transport layer 57 has been formed is moved to the sixth film forming apparatus 1, where the second electrode 58 is formed. In this embodiment, the first film forming apparatus 1 to the sixth film forming apparatus 1 form each layer by vacuum deposition. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth film forming apparatus 1 may be formed by sputtering. Thereafter, the substrate on which the second electrode 58 has been formed is moved to a sealing apparatus, and the protective layer 60 is formed by plasma CVD (sealing process), completing the organic EL display device 50. Note that, although the protective layer 60 is formed by the CVD method here, the present invention is not limited to this, and it may be formed by the ALD method or the inkjet method.

[0131] The invention is not limited to the above-described embodiment, and various modifications and variations are possible within the scope of the gist of the invention. [Explanation of symbols]

[0132] 1: film forming apparatus, 10: deposition unit, 11A to 11D: deposition source, 12A to 12D: shutter, 43: control unit

Claims

1. a vapor deposition means including a plurality of vapor deposition sources arranged in a predetermined direction and configured to emit a vapor deposition material onto a substrate, and a plurality of shutters configured to open and close the plurality of vapor deposition sources with respect to the substrate; a moving means for relatively moving the substrate and the deposition means in the predetermined direction during film formation; A control means for controlling opening and closing of the plurality of shutters; A film forming apparatus comprising: The plurality of deposition sources include a plurality of deposition sources each having a different type of deposition material to be emitted, the control means controls opening and closing of each shutter during film formation based on the types of deposition materials to be deposited on the substrate and the order of deposition of the materials. A film forming apparatus comprising:

2. The film forming apparatus according to claim 1 , the moving means is capable of relatively moving the substrate and the deposition means in a first direction and a second direction opposite to the first direction, which is the predetermined direction; the control means controls opening and closing of each shutter during film formation based on the types of deposition materials to be deposited on the substrate, the order of deposition, and whether the relative movement direction between the substrate and the deposition means is the first direction or the second direction. A film forming apparatus comprising:

3. The film forming apparatus according to claim 1 , The control means controlling opening and closing of each shutter during film formation so that the deposition materials of the types to be deposited on the substrate are released in the deposition order from the leading side in the relative movement direction of the deposition means with respect to the substrate; A film forming apparatus comprising:

4. The film forming apparatus according to claim 1 , The plurality of deposition sources are arranged in the predetermined direction. a first deposition source that emits a first deposition material; a second deposition source that emits a second deposition material; a third deposition source that emits a third deposition material so that an emission region of the third deposition source overlaps with that of the second deposition source; a fourth deposition source that emits the first deposition material; A film forming apparatus comprising:

5. The film forming apparatus according to claim 4, the control unit controls opening and closing of each shutter so as to expose the first to fourth deposition sources to the substrate during film formation. A film forming apparatus comprising:

6. The film forming apparatus according to claim 4, the control means controls opening and closing of each shutter so as to close the first evaporation source and open the second to fourth evaporation sources with respect to the substrate during film formation. A film forming apparatus comprising:

7. The film forming apparatus according to claim 4, the control means controls opening and closing of each shutter so as to close the fourth evaporation source and open the first, second, and third evaporation sources with respect to the substrate during film formation. A film forming apparatus comprising:

8. The film forming apparatus according to claim 4, the control means controls opening and closing of each shutter so as to close the first and fourth evaporation sources and open the third and fourth evaporation sources with respect to the substrate during film formation. A film forming apparatus comprising:

9. The film forming apparatus according to claim 1 , The shutter is provided for each of the deposition sources. A film forming apparatus comprising:

10. The film forming apparatus according to claim 1 , The plurality of shutters include a pivoting shutter and a sliding shutter. A film forming apparatus comprising:

11. The film forming apparatus according to claim 4, The plurality of shutters include a first shutter for opening and closing the first deposition source with respect to the substrate; a second shutter for opening and closing the second deposition source with respect to the substrate; a third shutter for opening and closing the third deposition source with respect to the substrate; a fourth shutter for opening and closing the fourth evaporation source with respect to the substrate.

12. The film forming apparatus according to claim 11, the second shutter and the third shutter are pivotable shutters, the first shutter and the fourth shutter are slide shutters; A film forming apparatus comprising:

13. The film forming apparatus according to claim 11, The first to fourth shutters are all rotary shutters. A film forming apparatus comprising:

14. A method for controlling a film forming apparatus including a vapor deposition means having a plurality of vapor deposition sources arranged in a predetermined direction and emitting a vapor deposition material onto a substrate, and a plurality of shutters for opening and closing the plurality of vapor deposition sources with respect to the substrate, and a moving means for relatively moving the substrate and the vapor deposition means in the predetermined direction during film formation, comprising: The plurality of deposition sources include a plurality of deposition sources each having a different type of deposition material to be emitted, The control method includes a step of controlling opening and closing of each shutter during film formation based on types of deposition materials to be deposited on the substrate and an order of deposition of the deposition materials. A control method comprising:

15. A film forming process of forming a film on a substrate by the film forming apparatus according to claim 1, 2. A method for producing an electronic device comprising the steps of:

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