Method of crystallizing large-sized diamond

Abstract

To solve the following problem that when diamond is used for a substrate of a semiconductor integrated circuit, it is expected to control a large amount of power, but it is difficult to crystallize the diamond to a certain size, and it takes a lot of time and effort to cut into small diamonds, which makes it difficult to mass-produce.SOLUTION: Mass production can be achieved by: using artificial diamond (in a particle form) to harden a blade of a shield machine or metal-cutting machine; and crystallizing the same.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to an application technology of diamond crystallization technology. [Background technology]

[0002] Artificial diamond crystallization technology Summary of the Invention [Problem to be solved by the invention]

[0003] Conventionally, in order to crystallize a large diamond, a small diamond was cut into a sapphire crystal and crystallized to produce a large diamond. To provide a manufacturing method which is simpler and more efficient than conventional methods. [Means for solving the problem]

[0004] Artificial diamonds (in tiny particles or powder form), which are used to harden the blades of shield machines and metal cutting machines, are arranged on top of a sapphire crystal. This is then crystallized to produce large diamonds. This can then be used as a substrate for semiconductor integrated circuits, in jewelry, and so on. This method solves the problem.

Claims

1. When diamond, an allotrope of carbon, is used as the substrate of a semiconductor integrated circuit, it is known that it can control electric power (high current, high voltage) 50,000 times greater than that of silicon, which is currently mainly used, and has durability against electric power. Although integrated circuits with this diamond as the substrate can control large amounts of electric power used in transportation equipment, facilities, etc., they have not been put into practical use because it has been difficult to mass-produce artificial diamonds of the size and shape required for integrated circuits (crystallization of artificial diamonds of the size and shape required for integrated circuits). Previously, diamonds with incisions were placed on sapphire crystals and crystallized to increase their size. In contrast, a method of crystallizing by arranging a large number of chips (fine particulate form) of artificial diamonds (industrial diamonds) used for hardening the blades of cutting machines such as diamond cutters and shield machines on sapphire crystals, which makes it possible to crystallize into sizes and shapes that have been difficult to mass-produce technically and cost-effectively. A method of uniformly arranging chips (fine particulate form) of artificial diamonds (industrial diamonds) used for hardening the blades of cutting machines such as diamond cutters and shield machines on sapphire crystals and manufacturing one large diamond crystal in the crystallization process. A method of using the diamond crystallized in this way for the substrate of an integrated circuit, etc.

2. A method of using cubic zirconia (zirconium dioxide), a diamond imitation, instead of artificial diamond chips (fine particulate form) by the method described in Claim 1.

3. A method of using graphite, an allotrope of carbon (black lead, graphite), instead of artificial diamond chips (fine particulate form) by the method described in Claim 1.

4. A method of using fullerenes, an allotrope of carbon (a general term for molecules in which carbon atoms are arranged in a spherical shape, regarded as the third allotrope of carbon after diamond and graphite), instead of artificial diamond chips (fine particulate form) by the method described in Claim 1.

5. A method of using carbon black (amorphous carbon), an allotrope of carbon, instead of artificial diamond chips (fine particulate form) by the method described in Claim 1.

6. Instead of using each of the described materials alone for crystallization, a method of manufacturing a single large diamond material by integrating the materials used, in which a plurality of materials are used in combination to crystallize diamond, according to the methods described in claim 1, claim 2, claim 3, claim 4, and claim 5. (Example) Arrange (spread) artificial diamond chips (fine particle form) on a sapphire crystal, which is the base for crystallization, with a uniform thickness and without gaps. Place carbon black (powder form) on top of this with a uniform thickness until the diamond chips are no longer visible. Arrange (spread) diamond chips on top of this with a uniform thickness and without gaps. Stack (pile up) this in multiple layers. Then, apply a high pressure from above within a crystallization apparatus in a vacuum state to manufacture a diamond wafer for semiconductor integrated circuits.

7. Parts, semiconductor integrated circuits, devices, equipment, cutting machines, transportation vehicles, defense equipment, artificial satellites, planetary exploration machines, and jewelry using the methods described in claim 1, claim 2, claim 3, claim 4, claim 5, and claim 6.

8. Services and businesses using the parts, semiconductor integrated circuits, devices, equipment, cutting machines, transportation vehicles, defense equipment, artificial satellites, planetary exploration machines, and jewelry described in claim 7.