Semiconductor light emitting element and semiconductor light emitting device

Abstract

To provide: a multi-segment semiconductor light emitting element which has a simple 1-chip structure, is easy in multi-stage light output adjustment, and is also capable of outputting in full-color with 1 chip; and a semiconductor light emitting device using the same.SOLUTION: A semiconductor light emitting element includes: a light emitting functional layer including an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; and a support substrate joining and supporting the light emitting functional layer. On a joint surface side of the light emitting functional layer, there are provided multiple p ohmic electrodes separated from each other on the p-type semiconductor layer and an n ohmic electrode on the n-type semiconductor layer. On a joint surface side of the support substrate, there are provided multiple substrate p electrodes separated from each other and facing the multiple p ohmic electrodes, and a substrate n electrode facing the n ohmic electrode. Each of multiple p ohmic electrodes has a p wiring electrode provided outside a joint area of the light emitting functional layer, and has an n wiring electrode electrically connected to the n ohmic electrode on the opposite side of a joint surface of the support substrate.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] The present invention relates to a semiconductor light-emitting element and a semiconductor light-emitting device, and more particularly to a multi-segment semiconductor light-emitting element and a light-emitting device using the semiconductor light-emitting element. [Background technology]

[0002] In recent years, semiconductor light-emitting elements such as light-emitting diodes (LEDs) have been arranged in multiple devices for use in order to achieve higher output and control the color of emitted light. Multi-color light-emitting devices are also known as light sources for illumination, indicator lamps, mini-LEDs, and other light sources.

[0003] For example, Patent Document 1 discloses a white LED light-emitting device and a color display device that are composed of a blue LED as a first LED, a yellow phosphor coated on the blue LED, a red LED as a second LED, and a third LED having an emission wavelength band between the emission wavelength band of the blue LED and the excited emission wavelength band of the yellow phosphor, and can replace fluorescent lamps as a backlight for a color display device or as natural illumination light. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2005-5482 A Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made in consideration of the above-mentioned points, and aims to provide a multi-segment semiconductor light-emitting element and semiconductor light-emitting device that has a simple one-chip structure, allows easy multi-stage light output adjustment, and is capable of full-color output with a single chip. [Means for solving the problem]

[0006] A semiconductor light emitting device according to one embodiment of the present invention comprises: a light-emitting functional layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; A support substrate that bonds and supports the light-emitting functional layer, On the junction surface side of the light emitting functional layer, a plurality of p ohmic electrodes spaced apart from each other are provided on the p-type semiconductor layer, and an n ohmic electrode is provided on the n-type semiconductor layer, a plurality of substrate p electrodes opposed to the plurality of p ohmic electrodes and spaced apart from each other, and a substrate n electrode opposed to the n ohmic electrode, are provided on a bonding surface side of the support substrate; Each of the plurality of p-ohmic electrodes has a p-wiring electrode provided outside a junction region of the light-emitting functional layer, The supporting substrate has an n-type wiring electrode electrically connected to the n-type ohmic electrode on the side opposite to the bonding surface.

[0007] A semiconductor light emitting device according to one embodiment of the present invention comprises: The above-mentioned semiconductor light emitting elements are arranged in a matrix. [Brief description of the drawings]

[0008] [Figure 1A] 1 is a perspective view illustrating a semiconductor light emitting device according to a first embodiment. [Figure 1B] 1B is an equivalent circuit diagram of the semiconductor light emitting device 10 shown in FIG. 1A. [Figure 2A] 1 is a top view of a semiconductor light emitting element according to a first embodiment. [Figure 2B] FIG. 2B is a cross-sectional view taken along line AA shown in FIG. 2A. [Figure 2C] FIG. 2B is a cross-sectional view taken along line DD shown in FIG. 2A. [Figure 3A] FIG. 2 is a diagram showing the bottom surface of the light-emitting functional layer, that is, the bonding surface with the support substrate. [Figure 3B] FIG. 3B is a cross-sectional view taken along line EE shown in FIG. 3A. [Figure 3C] FIG. 3B is a cross-sectional view taken along line FF shown in FIG. 3A. [Figure 4A]FIG. 2 is a diagram showing the upper surface of the support substrate, that is, the bonding surface with the light-emitting functional layer. [Figure 4B] FIG. 4B is a cross-sectional view taken along line BB shown in FIG. 4A. [Figure 4C] FIG. 4B is a cross-sectional view taken along line DD shown in FIG. 4A. [Figure 5A] FIG. 2B is a cross-sectional view taken along line BB shown in FIG. 2A. [Figure 5B] FIG. 2B is a cross-sectional view taken along line CC shown in FIG. 2A. [Figure 5C] FIG. 2 shows a through electrode that passes through the substrate and is electrically connected to a substrate electrode and a common cathode. [Figure 6A] FIG. 2 is a perspective view showing a semiconductor light emitting element before being mounted on a circuit board. [Figure 6B] FIG. 2 is a perspective view showing a semiconductor light emitting element after being mounted on a circuit board. [Figure 7A] FIG. 13 is a diagram illustrating a liquid crystal display using the semiconductor light emitting device of the second embodiment. [Figure 7B] FIG. 7B is a partially enlarged view showing a part W of the semiconductor light emitting device shown in FIG. 7A. [Figure 8] 13 is a diagram illustrating a top view of the semiconductor light emitting device according to the third embodiment. FIG. [Figure 9] FIG. 13 is a perspective view diagrammatically illustrating a semiconductor light emitting device according to a fourth embodiment. [Figure 10] FIG. 13 is a perspective view diagrammatically illustrating a semiconductor light emitting device which is a modified example of the fourth embodiment. [Figure 11A] FIG. 13 is a top view of a semiconductor light emitting device according to a fifth embodiment. [Figure 11B] FIG. 11B is a cross-sectional view taken along line GG in FIG. 11A. [Figure 11C] 13 is a diagram showing a back surface of the semiconductor light emitting device according to the fifth embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] In the following, preferred embodiments of the present invention will be described, which may be modified and combined as appropriate. In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals. [First embodiment] 1. Structure of semiconductor light emitting element Fig. 1A is a perspective view showing a semiconductor light emitting device 10 according to a first embodiment of the present invention, and Fig. 1B is an equivalent circuit diagram of the semiconductor light emitting device 10 shown in Fig. 1A.

[0010] The semiconductor light emitting element 10 comprises a support substrate 30 and a light emitting functional layer 20 bonded onto the support substrate 30. The light emitting functional layer 20 has three light emitting regions, namely, a first light emitting region 10A1, a second light emitting region 10A2, and a third light emitting region 10A3.

[0011] A first anode 35A1, a second anode 35A2, and a third anode 35A3, which are substrate wiring electrodes respectively connected to the first light-emitting region 10A1, the second light-emitting region 10A2, and the third light-emitting region 10A3, are provided on the supporting substrate 30. In addition, a common cathode 34, which is an n-type wiring electrode commonly connected to the first light-emitting region 10A1, the second light-emitting region 10A2, and the third light-emitting region 10A3, is provided on the rear surface of the supporting substrate 30.

[0012] 1B is a circuit diagram showing a connection configuration of the semiconductor light emitting element 10. The semiconductor light emitting element 10 has a configuration in which a first light emitting region 10A1, a second light emitting region 10A2, and a third light emitting region 10A3 are connected in parallel.

[0013] Therefore, the first light-emitting region 10A1, the second light-emitting region 10A2, and the third light-emitting region 10A3 can be driven individually to emit light individually by passing a current between the first anode 35A1, the second anode 35A2, or the third anode 35A3 and the common cathode 34. That is, the semiconductor light-emitting element 10 is configured as a multi-segment type light-emitting element.

[0014] The structure of the semiconductor light emitting element 10 will be described in detail below with reference to Figures 2A to 2C. Figure 2A is a top view of the semiconductor light emitting element 10, and Figures 2B and 2C are cross-sectional views taken along lines AA and DD, respectively, shown in Figure 2A.

[0015] 2A to 2C, the semiconductor light emitting element 10 has a configuration in which a light emitting functional layer 20, which is a so-called thin-film LED, is attached to a support substrate 30. More specifically, after electrodes, a protective film, and the like are formed on a semiconductor layer having an LED structure epitaxially grown on a growth substrate, the LED is removed from the growth substrate (thin-film LED) and joined to the support substrate 30.

[0016] (1) Light-emitting functional layer FIG. 3A is a diagram showing the bottom surface of the light-emitting functional layer 20, that is, the bonding surface with the support substrate 30, and FIGS. 3B and 3C are cross-sectional views taken along lines EE and FF, respectively, shown in FIG. 3A.

[0017] 2B and 2C, the light-emitting functional layer 20 has a light-emitting semiconductor layer 20A composed of an n-type semiconductor layer 21, a light-emitting layer 22, and a p-type semiconductor layer 23. In this embodiment, the p-type semiconductor layer 23 is composed of a p-clad layer 23A and a p-contact layer 23B formed on the p-clad layer 23A.

[0018] More specifically, each of the n-type semiconductor layer 21 and the p-type semiconductor layer 23 is composed of at least one semiconductor layer. For example, various semiconductor layers such as an electron blocking layer (EBL), a current diffusion layer, and a contact layer may be provided. In addition, the n-type semiconductor layer 21 and the p-type semiconductor layer 23 may be provided with an undoped layer (or an i-layer).

[0019] The light-emitting functional layer 20 is, for example, a blue-emitting LED semiconductor layer made of a GaN-based semiconductor layer, but is not limited thereto. The light-emitting layer 22 has, for example, a single quantum well (SQW) or multiple quantum well (MQW) structure. Alternatively, the light-emitting layer 22 may have a so-called bulk structure.

[0020] 2B and 2C, a p-electrode 25A (p ohmic electrode) and an n-electrode 25B (n ohmic electrode), which are element electrodes, are provided in the light-emitting functional layer 20. More specifically, as shown in Fig. 3A and 3C, the p-electrode 25A is composed of a p-electrode 25A1 (first p-electrode), a p-electrode 25A2 (second p-electrode), and a p-electrode 25A3 (third p-electrode).

[0021] In the following, an example will be described in which p-electrode 25A is divided into three electrodes, the first to third p-electrodes, but p-electrode 25A may be divided into a plurality of electrodes. In addition, when the divided electrodes are not particularly distinguished, they will be collectively referred to as p-electrode 25A.

[0022] More specifically, a p-electrode 25A1, a p-electrode 25A2 and a p-electrode 25A3 are formed on the p-type semiconductor layer 23 in the first light emitting region 10A1, the second light emitting region 10A2 and the third light emitting region 10A3, respectively.

[0023] In other words, the first light emitting region 10A1, the second light emitting region 10A2, and the third light emitting region 10A3 are defined corresponding to the p-electrode 25A1, the p-electrode 25A2, and the p-electrode 25A3, respectively. The p-electrode 25A is formed as a light-reflective electrode. The p-electrode 25A is made of, for example, an indium tin oxide (ITO) ohmic electrode of a light-transmitting conductive film, a nickel (Ni) / silver (Ag) reflective film, and an ITO / Ni / Ag / Pt / Ti / Au layer in which platinum (Pt), titanium (Ti) and gold (Au) are formed in this order on the p-type semiconductor layer 23. Note that, although it is preferable that the p-electrode 25A is provided with a reflective film having a high reflectance such as an Ag film, the reflective film may not be provided.

[0024] 2B, reflected light Lr emitted from the light emitting layer 22 and reflected by the p-electrode 25A is emitted from the surface of the n-type semiconductor layer 21 together with direct light Ld from the light emitting layer 22. It is preferable that the surface (light emitting surface) of the n-type semiconductor layer 21 is roughened in terms of improving the light extraction efficiency.

[0025] 2A and 2B, between adjacent light-emitting regions, i.e., between adjacent p-electrodes 25A, a hole 27H is formed which penetrates the light-emitting layer 22 and the p-type semiconductor layer 23 and exposes the n-type semiconductor layer 21. An n-electrode 25B is formed on the exposed surface of the n-type semiconductor layer 21.

[0026] The n-electrode 25B is made of a Ti / Au layer in which titanium (Ti) and gold (Au) are formed in this order on the n-type semiconductor layer 21.

[0027] The materials and layer structures of p-electrode 25A and n-electrode 25B are not limited to those described above, and may be appropriately selected in consideration of characteristics such as ohmic characteristics, light extraction efficiency by reflection, and element reliability (lifetime).

[0028] Referring again to the circuit diagram in FIG. 1B, the resistance Rc between the first light emitting region 10A1 to the third light emitting region 10A3 corresponds to the resistance between the p-type semiconductor layers 23 to which the first anode 35A1 to the third anode 35A3 are electrically connected.

[0029] This resistance Rc is high and has a magnitude such that, for example, even when a voltage is applied between the second anode 35A2 and the common cathode 34 to cause the second light-emitting region 10A2 to emit light, the voltage of the first light-emitting region 10A1 and the third light-emitting region 10A3 does not reach the rise voltage value.

[0030] In the case of GaN-based semiconductors, the hole mobility of p-type semiconductors is 1 to 3 (cm 2 / Vsec) or less, and the thickness of the p-type semiconductor layer 23 (i.e., the p-cladding layer 23A and the p-contact layer 23B) is also thin (0.5 μm to 1 μm or less), and the current diffusion in the lateral direction from the periphery of each of the first anode 35A1 to the third anode 35A3 is extremely limited (about the thickness of the p-type semiconductor layer 23 or less). Therefore, since the current flows to the light-emitting layer 22 with a size approximately equal to the size of the anode, it is possible to divide the light-emitting region in one chip by dividing the p-electrode. In other words, by providing each of the first anode 35A1 to the third anode 35A3 at a distance equal to or greater than the layer thickness of the p-type semiconductor layer 23, it is possible to drive each light-emitting region independently.

[0031] An element protective film 28A made of an insulating film (SiO2) is provided on the side surface of the light emitting semiconductor layer 20A made of the n-type semiconductor layer 21, the light emitting layer 22, and the p-type semiconductor layer 23. As shown in Fig. 2B, the element protective film 28A is also provided on the inner wall surface of the light emitting semiconductor layer 20A exposed in the hole 27H. As shown in Fig. 3C, the element protective film 28A is also provided between the p-electrodes 25A1, 25A2, and 25A3.

[0032] (2) Support substrate FIG. 4A is a diagram showing the upper surface of the support substrate 30, that is, the surface to be bonded to the light-emitting functional layer 20, and FIGS. 4B and 4C are cross-sectional views taken along lines BB and DD, respectively, shown in FIG. 4A.

[0033] The support substrate 30 has a base material 31 and an interlayer insulating film 32 provided on the upper surface of the base material 31. The base material 31 is a conductive n-type silicon substrate made of silicon (Si) doped with phosphorus (P) or arsenic (As). The interlayer insulating film 32 is made of, for example, SiO2.

[0034] 4A to 4C, a first substrate electrode 33A1, a second substrate electrode 33A2, and a third substrate electrode 33A3 (p-substrate electrode) are provided on the interlayer insulating film 32. The first substrate electrode 33A1, the second substrate electrode 33A2, and the third substrate electrode 33A3 are formed to have shapes, sizes, and positions (see FIG. 3A) corresponding to the p-electrodes 25A1, 25A2, and 25A3 of the light-emitting functional layer 20, respectively.

[0035] The first substrate electrode 33A1, the second substrate electrode 33A2 and the third substrate electrode 33A3 extend to the outside of the junction area with the light-emitting functional layer 20, and on the ends of each extension, there are provided a first anode 35A1, a second anode 35A2 and a third anode 35A3 (substrate wiring electrodes) connected to the first substrate electrode 33A1, the second substrate electrode 33A2 and the third substrate electrode 33A3, respectively.

[0036] An electrode protective film 36, which is an insulating film, is provided between the first substrate electrode 33A1, the second substrate electrode 33A2, and the third substrate electrode 33A3, on the edges of the electrodes, and on the edges of the first anode 35A1, the second anode 35A2, and the third anode 35A3. Therefore, on the base material 31, the first anode 35A1, the second anode 35A2, and the third anode 35A3 are electrically insulated from each other.

[0037] Furthermore, at a position corresponding to the n-electrode 25B (see FIG. 3A) of the light-emitting functional layer 20, a substrate electrode 33B (see FIG. 4A) which is an n-electrode is provided.

[0038] (3) Bonding of the light-emitting functional layer and the supporting substrate 5A and 5B are cross-sectional views taken along lines BB and CC shown in FIG. 2A, respectively, and are diagrams showing the positional relationship when the light-emitting functional layer 20 and the support substrate 30 are bonded together.

[0039] As shown in FIG. 5A, the p-electrode 25A1, the p-electrode 25A2, and the p-electrode 25A3 of the light-emitting functional layer 20A are joined to the first substrate electrode 33A1, the second substrate electrode 33A2, and the third substrate electrode 33A3 of the support substrate 30 by a conductive p-side bonding layer 26.

[0040] 5B, the n-electrode 25B of the light-emitting functional layer 20 is joined to the substrate electrode 33B of the support substrate 30 by the n-side joining layer 27. The substrate 31 is conductive, and the substrate electrode 33B is electrically connected to the common cathode 34 via the substrate 31.

[0041] An insulating material such as ceramic may be used for the base material 31. In this case, a through electrode 39 may be provided that penetrates the base material 31 and is electrically connected to the substrate electrode 33B and the common cathode 34, as shown in FIG.

[0042] The first anode 35A1, the second anode 35A2, and the third anode 35A3 are provided outside the bonding area of ​​the light-emitting functional layer 20 and the support substrate 30, and the first anode 35A1, the second anode 35A2, and the third anode 35A3 are exposed on the upper surface of the support substrate 30.

[0043] The first light-emitting region 10A1, the second light-emitting region 10A2, and the third light-emitting region 10A3 can each be driven individually by passing a current between the first anode 35A1, the second anode 35A2, or the third anode 35A3 and the common cathode 34. As a result, as shown in FIG. 2C, emitted light LE1, LE2, and LE3 are emitted from the first light-emitting region 10A1, the second light-emitting region 10A2, and the third light-emitting region 10A3, respectively.

[0044] (4) Mounting of semiconductor light emitting elements 6A and 6B are perspective views showing the semiconductor light emitting element 10 before and after mounting on the circuit board 41, respectively.

[0045] 6A, the circuit board 41 has anode wirings 43A1, 43A2, and 43A3 and a cathode wiring 44. The common cathode 34 of the semiconductor light emitting element 10 is joined onto the cathode wiring 44 of the circuit board 41 via, for example, tin-silver-copper (SnAgCu) solder, and the common cathode 34 is electrically connected to the cathode wiring 44 of the circuit board 41.

[0046] 6B, after the semiconductor light emitting element 10 is bonded to the circuit board 41, the first wiring electrode 35A1, the second wiring electrode 35A2, and the third wiring electrode 35A3 of the semiconductor light emitting element 10 are connected to the anode wirings 43A1, 43A2, and 43A3 of the circuit board 41, respectively, by bonding wires 45. In this manner, a semiconductor light emitting device 50 in which the semiconductor light emitting element 10 is mounted on the circuit board 41 is obtained.

[0047] By passing a current between at least one of the anode wirings 43A1, 43A2, and 43A3 of the circuit board 41 and the cathode wiring 44, the light emission of the light emitting regions 10A1, 10A2, and 10A3 can be individually controlled.

[0048] For example, when light-emitting regions 10A1, 10A2, and 10A3 have the same area and are applied with the same voltage, the light output of semiconductor light-emitting element 10 can be set to 1×LE, 2×LE, or 3×LE by turning on or off (ON / OFF) each light-emitting region, where LE is the light output of one light-emitting region. Also, by applying different voltages to each light-emitting region, the light output of semiconductor light-emitting element 10 can be continuously adjusted between 0 and 3×LE. Furthermore, the light output of the semiconductor light emitting element 10 can be freely adjusted by making the areas of the light emitting regions 10A1, 10A2, and 10A3 different.

[0049] [Second embodiment] Fig. 7A is a diagram showing a liquid crystal display LCD using a semiconductor light emitting device 60 according to a second embodiment of the present invention, and Fig. 7B is a partially enlarged view showing a part W of the semiconductor light emitting device 60 in an enlarged manner.

[0050] The liquid crystal display LCD has a semiconductor light emitting device 60 according to the second embodiment. That is, the semiconductor light emitting device 60 is configured as a light source panel of the liquid crystal display. As shown in Fig. 7B, the semiconductor light emitting element 10 of the first embodiment is mounted on each pixel of the semiconductor light emitting device 60. That is, the semiconductor light emitting elements 10 are arranged in a matrix in the semiconductor light emitting device 60.

[0051] The liquid crystal display LCD is provided with a wavelength conversion sheet 63 and a liquid crystal panel 65 (including a polarizing plate). The wavelength conversion sheet 63 is made of, for example, a quantum dot (QD) wavelength conversion material. More specifically, the wavelength conversion sheet 63 converts light (for example, blue light) from the semiconductor light emitting element 10 of the semiconductor light emitting device 60 into white light. The liquid crystal panel 65 performs color control of the white light from the wavelength conversion sheet 63.

[0052] Local dimming can be performed by controlling the light output of the semiconductor light emitting element 10 of each pixel. For example, the brightness of the illumination area can be adjusted to three levels by turning on / off the light output of the semiconductor light emitting element 10 of each pixel by turning on / off the current between the anodes 35A1, 35A2, and 35A3 and the common cathode 34. In other words, the dimming area DR can be easily dimmed by simply turning on / off the current to each pixel.

[0053] Therefore, by controlling only whether or not electricity is applied, it is possible to easily adjust the light output in multiple steps. Furthermore, by adjusting the drive voltage between the anodes 35A1, 35A2, and 35A3 and the common cathode 34 in n steps (e.g., n=5), it is possible to adjust the light output in 3×n steps (e.g., 15 steps).

[0054] [Third embodiment] 8 is a diagram illustrating a top surface of a semiconductor light emitting device 70 according to a third embodiment of the present invention. In the semiconductor light emitting device 70, the areas of a first light emitting region 10A1, a second light emitting region 10A2, and a third light emitting region 10A3 are different from one another. The other configurations are the same as those of the semiconductor light emitting device 10 of the first embodiment.

[0055] Specifically, the first light-emitting region 10A1, the second light-emitting region 10A2, and the third light-emitting region 10A3 are formed so that their area ratio is, for example, 3:1:2. As described above, since the current diffusion in the lateral direction from the periphery of each of the first anode 35A1 to the third anode 35A3 is extremely limited, the area of ​​each of the light-emitting regions 10A1, 10A2, and 10A3 can be set by the area of ​​the p-electrodes 25A1, 25A2, and 25A3.

[0056] For example, by setting the area ratio of light-emitting regions 10A1, 10A2, and 10A3 to 3:1:2, the light output can be adjusted in six stages (1, 2, 3, 1+3, 2+3, 1+2+3) by simply controlling the electrical connection or disconnection (ON / OFF) between anodes 35A1, 35A2, and 35A3 and common cathode 34.

[0057] Therefore, by controlling only whether or not current is applied, it is possible to easily adjust the optical output in multiple stages. In addition, by using the driving current control in combination, it is possible to easily adjust the optical output with high accuracy.

[0058] [Fourth embodiment] 9 is a perspective view illustrating a semiconductor light emitting element 80 according to a fourth embodiment of the present invention. In the semiconductor light emitting element 80, a first wavelength conversion member 81, a second wavelength conversion member 82, and a third wavelength conversion member 83 are provided on the first light emitting region 10A1, the second light emitting region 10A2, and the third light emitting region 10A3, respectively. Quantum dot (QD) wavelength conversion materials are used for the wavelength conversion materials 81, 82, and 83. The QD wavelength conversion material has a small particle diameter of the nm order (1 nm to several tens of nm), so it can be densely applied to the light output surface, suppressing light leakage of excitation light and enabling wavelength conversion with high color purity.

[0059] The QD wavelength conversion member is a member containing semiconductor particles formed to a size sufficient to exhibit the quantum confinement effect, and the band gap can be increased compared to the bulk state by reducing the particle size or particle diameter. Therefore, the conversion wavelength can be adjusted by making the particle diameters of the wavelength conversion members 81, 82, and 83 different.

[0060] Examples of QD wavelength conversion materials include S-based nanoparticles such as cadmium sulfide (CdS), Te-based nanoparticles such as ZnTe, P-based nanoparticles such as InGaP, Se-based nanoparticles such as Zn(Te,Se), O-based nanoparticles such as ZnO, and Si-based nanoparticles.

[0061] As the QD wavelength conversion material, semiconductor crystals such as InP, InGaP, and Si are suitable, taking into consideration the material cost, ease of processing, controllability of the particle size that can obtain light emission in the visible range, and fluorescence quantum yield.

[0062] From the viewpoint of thinning the light-emitting device, it is desirable to reduce the particle diameter of the QD wavelength conversion material in order to thin the wavelength conversion material, and it is preferable to apply a single element material that is easy to process, such as a Si-based nanoparticle. In addition, the quantum dots may have a core-shell structure.

[0063] Each wavelength conversion member converts and outputs the wavelength of light emitted from the light emitting layer 22. For example, the first wavelength conversion member 81 outputs blue light (B), the second wavelength conversion member 82 outputs green light (G), and the third wavelength conversion member 83 outputs red light (R). Note that when the light emitted from the light emitting layer 22 is blue, a directivity adjustment member can be used.

[0064] Therefore, according to the semiconductor light emitting element 80 of the fourth embodiment, three light emitting regions are provided in one light emitting element, and it is possible to emit blue (B), green (G), and red (R) from each light emitting region, respectively. In other words, it is possible to realize a light emitting element that emits RGB light with one light emitting element.

[0065] Furthermore, since the semiconductor light emitting element 80 has light emitting regions that emit light of different colors arranged adjacent to each other, color shift due to parallax can be reduced, and visible light emission without color shift can be achieved.

[0066] Note that optical members such as a directivity adjusting member, a diffusion plate (scattering plate), and a prism lens may be provided instead of the wavelength conversion members 81, 82, and 83. The directivity, light distribution, and uniformity of the emitted light can be adjusted.

[0067] Furthermore, the combination of three colors of the semiconductor light emitting element 80 is not limited to RGB, but may be a combination of high color rendering white (WW), cyan (C) and red (R), etc. Alternatively, at least four light emitting regions may be provided to provide a light emitting element with a combination of RRGB, etc. It is possible to provide a multi-segment type semiconductor light emitting element capable of high color rendering full color output with one chip.

[0068] (Modification) FIG. 10 is a perspective view that diagrammatically illustrates a semiconductor light emitting device 85 that is a modified example of the semiconductor light emitting device 80 according to the fourth embodiment.

[0069] In the semiconductor light emitting element 85 of the fourth embodiment, a light shielding mask 87 is provided in the gaps between and around the wavelength conversion members 81, 82, and 83 of the semiconductor light emitting element 80 of the third embodiment. Therefore, even slight color mixing and crosstalk of the light emitted from each light emitting region can be prevented.

[0070] As the light-shielding mask, a black mask in which carbon black is added to silicone resin, a white mask in which titanium oxide is added to silicone resin, or the like can be used.

[0071] Furthermore, when the base material 31 of the support substrate 30 is made of a material that absorbs visible light (for example, silicon), a dielectric multilayer reflective film 88 may be provided on the side surface of the support substrate 30. This makes it possible to suppress a decrease in light output due to absorption.

[0072] Incidentally, optical members such as a diffusion plate (scattering plate) and a prism lens may be provided on the wavelength conversion members 81, 82, and 83 to adjust the light distribution characteristics and uniformity.

[0073] [Fifth embodiment] Fig. 11A is a top view of a semiconductor light emitting device 90 according to a fifth embodiment, Fig. 11B is a cross-sectional view taken along line GG in Fig. 11A, and Fig. 11C is a view showing the back surface of the semiconductor light emitting device 90.

[0074] The semiconductor light emitting device 90 includes the semiconductor light emitting element 80 of the fourth embodiment and a device substrate 91 on which the semiconductor light emitting element 80 is mounted. On the device substrate 91, anode wirings 93A1, 93A2, and 93A3 and a cathode wiring 93B are provided.

[0075] Further, a first mounting electrode 96A1, a second mounting electrode 96A2, a third mounting electrode 96A3, and a common mounting electrode 96B are provided on the rear surface of the device substrate 91. The first mounting electrode 96A1, the second mounting electrode 96A2, and the third mounting electrode 96A3 are connected to the anode wirings 93A1, 93A2, and 93A3 by via electrodes 95A1, 95A2, and 95A3, respectively, and the common mounting electrode 96B is connected to the cathode wiring 93B by the via electrode 95B.

[0076] The semiconductor light emitting element 80 is mounted on the mounting area of ​​the cathode wiring 93B by a bonding member, and the common cathode 34 of the semiconductor light emitting element 80 is electrically connected to the cathode wiring 93B. The anodes 35A1, 35A2, and 35A3 of the semiconductor light emitting element 80 are connected to the anode wirings 93A1, 93A2, and 93A3, respectively, by bonding wires BW.

[0077] A protective element 97 is mounted on the cathode wiring 93B, and one terminal of the protective element 97 is connected to the cathode wiring 93B. The other terminal of the protective element 97 is connected to the extension 93EX of the anode wiring 93A2 by a bonding wire BW. The protective element 97 may be, but is not limited to, a Zener diode or a varistor.

[0078] Since the light emitting semiconductor layer 20A of the semiconductor light emitting element 80 is not divided, the entire light emitting element can be protected by providing one protective element 97 between one of the anode wirings 93A1, 93A2, and 93A3 (in this embodiment, the central anode wiring 93A2) and the cathode wiring 93B.

[0079] In other words, even if an abnormal current flows between the anode wiring 93A1 or 93A3 adjacent to the anode wiring 93A2 and the cathode wiring 93B, the abnormal current flows through the anode wiring 93A2 via the p-type semiconductor layer 23 of the light emitting semiconductor layer 20A, and the semiconductor light emitting element 80 is protected from the abnormal current.

[0080] Therefore, in the semiconductor light emitting device 90, it is possible to omit the protective element in the light emitting region adjacent to the light emitting region in which the protective element is provided.

[0081] The semiconductor light emitting device 90 is also provided with a sealing member 98 that covers the entire upper surface of the device substrate 91 including the semiconductor light emitting element 80. The sealing member 98 may contain a diffusing agent that diffuses the light from the semiconductor light emitting element 80.

[0082] If it is desired that light be emitted only upward from the semiconductor light emitting device 90, a light-shielding frame may be provided around the periphery of the device substrate 91 so as to enclose the semiconductor light emitting element 80 and the sealing member 98.

[0083] As described in detail above, the semiconductor light-emitting device of the present invention can provide a multi-segment type semiconductor light-emitting element and semiconductor light-emitting device that have a simple one-chip structure, allow easy multi-stage light output adjustment, and are capable of full-color output from a single chip.

[0084] The above-described embodiments can be combined as appropriate. For example, in the second embodiment, the semiconductor light emitting device in which the semiconductor light emitting elements 10 are arranged in a matrix has been described, but a semiconductor light emitting device in which full-color output semiconductor light emitting elements 80 (fourth embodiment) are arranged in a matrix may be configured. [Explanation of symbols]

[0085] 10, 70, 80: Semiconductor light emitting element 20: Light-emitting functional layer 21: n-type semiconductor layer, 22: Light-emitting layer 22 23: p-type semiconductor layer 25A1, 25A2, 25A3: p-ohmic electrode (device electrode) 25B: n Ohmic electrode (device electrode) 26:p side bonding layer 27:n side bonding layer 30: Support substrate 31: Substrate (substrate) 32: Interlayer insulating film 33A1, 33A2, 33A3: Substrate electrode (p electrode) 33B: Substrate electrode (n electrode) 34: Common cathode (substrate wiring electrode) 35A1, 35A2, 35A3: Anodes (substrate wiring electrodes) 36: Electrode protective film 50, 60, 90: Semiconductor light-emitting device 81, 82, 83: Wavelength conversion material 87: Shading mask 93A1, 93A2, 93A3: Anode wiring 93B: Cathode wiring 96A1, 96A2, 96A3: Mounting electrode (p electrode) 96B: Common mounting electrode (n electrode) 97: Protection element 98: Sealing member

Claims

1. a light-emitting functional layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; A support substrate that bonds and supports the light-emitting functional layer, On the junction surface side of the light emitting functional layer, a plurality of p ohmic electrodes spaced apart from each other are provided on the p-type semiconductor layer, and an n ohmic electrode is provided on the n-type semiconductor layer, a plurality of substrate p-electrodes opposed to the plurality of p-ohmic electrodes and spaced apart from each other, and a substrate n-electrode opposed to the n-ohmic electrode, are provided on a bonding surface side of the support substrate; Each of the plurality of p-ohmic electrodes has a p-wiring electrode provided outside a junction region of the light-emitting functional layer, the semiconductor light emitting element further comprising an n-type wiring electrode electrically connected to the n-type ohmic electrode on the opposite side to the bonding surface of the supporting substrate.

2. The semiconductor light emitting device according to claim 1 , wherein the plurality of p-ohmic electrodes are spaced apart at intervals equal to or greater than the thickness of the p-type semiconductor layer.

3. The semiconductor light emitting device according to claim 1 , wherein the p-ohmic electrodes have different areas.

4. The semiconductor light emitting device according to claim 1 , wherein a plurality of wavelength converting members having different conversion wavelengths are provided on a plurality of light emitting regions defined in correspondence with the plurality of p-ohmic electrodes.

5. The light emitting device has at least three light emitting regions, and wavelength conversion members that emit green light (G) and red light (R) are provided on two of the at least three light emitting regions, The semiconductor light-emitting element according to claim 4 , wherein the emitted light from the light-emitting layer is blue light (B).

6. The semiconductor light emitting element according to claim 5 , wherein the wavelength conversion members having different conversion wavelengths are quantum dot wavelength conversion members.

7. The semiconductor light emitting device according to claim 5 , wherein a light shielding mask is provided around and in the gaps between each of the plurality of wavelength conversion members.

8. 8. A semiconductor light emitting device comprising the semiconductor light emitting elements according to claim 1 arranged in a matrix.

9. A semiconductor light emitting device according to any one of claims 1 to 7, a device substrate on which the semiconductor light emitting device is mounted; a protection element connected between any one of the plurality of p-ohmic electrodes and the n-ohmic electrode.

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