Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

Abstract

To prevent delamination from occurring at the boundary between a fiber-reinforced resin substrate and a resin material for adhesion in a semiconductor light emitting device using a fiber-reinforced resin substrate with a metal core inserted.SOLUTION: A semiconductor light emitting device has a substrate, a semiconductor light emitting element mounted on the substrate, and a resin lens positioned on the substrate to fill the area around the semiconductor light emitting element. The substrate includes a plate-shaped fiber-reinforced resin base material, a through hole through the base material in the thickness direction, a metal core positioned in the through hole, a resin for adhesion filling the space between the metal core and the inner wall of the through hole, and a metal pattern covering at least the top surface of the metal core. The semiconductor light emitting elements are die-bonded to the area directly above the metal core of the metal pattern. The top or back surface of the substrate has one or more degassing holes with a depth that reaches the base material.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor light emitting device in which a semiconductor light emitting element is die-bonded onto a resin substrate on which wiring is provided. [Background technology]

[0002] 2. Description of the Related Art A semiconductor light emitting device in which a wiring pattern is formed on a fiber reinforced resin substrate, a semiconductor light emitting element (LED element) is die bonded onto the wiring pattern, and the LED element is surrounded by a lens-shaped resin and filled with the resin is known from Patent Document 1, for example.

[0003] Also, in order to efficiently conduct and dissipate heat from the LED elements of the semiconductor light emitting device to the mounting board on which the semiconductor light emitting device is mounted, a copper inlay board is used as the board on which the LED elements are mounted. The copper inlay board has a structure in which a through hole is provided in the thickness direction of the board in the area where the LED elements are die-bonded, and a copper core (copper inlay) is inserted and fixed (Non-Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2000-261041 A [Non-patent literature]

[0005] [Non-Patent Document 1] https: / / www.showanet.jp / product / 5 / #sec5 Summary of the Invention [Problem to be solved by the invention]

[0006] In the case of a fiber-reinforced resin substrate, a copper core (copper inlay) is inserted into a through hole in the fiber-reinforced resin substrate, and then prepreg (uncured adhesive resin material) is injected around the copper core. The prepreg is then cured, and the copper core and fiber-reinforced resin are bonded together with the adhesive resin material.

[0007] When manufacturing a semiconductor light-emitting device using a fiber-reinforced resin substrate with such a structure, in the process of applying a die attachment material such as AuSn solder onto the copper core and adhesively fixing the LED element (element adhesive fixing process), peeling may occur at the boundary between the fiber-reinforced resin substrate and the adhesive resin material due to the heat of the die attachment material.

[0008] Furthermore, in the process of molding a lens from resin by insert molding onto a substrate to which an LED element is adhesively fixed (lens molding process), during the pre-heating step before the lens resin is inserted, the heat can sometimes cause peeling at the boundary between the fiber-reinforced resin substrate and the adhesive resin material.

[0009] One of the reasons for the peeling at the boundary between the fiber-reinforced resin substrate and the adhesive resin material is the difference in thermal expansion coefficient between the fiber-reinforced resin substrate and the adhesive resin material. Another reason is that moisture contained in the fiber-reinforced resin substrate expands due to heat, reaches the wall of the through hole provided in the fiber-reinforced resin substrate along the reinforcing fibers, and causes peeling when it escapes from the boundary with the adhesive resin material to the outside.

[0010] If peeling occurs at the boundary between the fiber-reinforced resin substrate and the adhesive resin material, the uncured lens resin will enter the peeled portion between the fiber-reinforced resin substrate and the adhesive resin material and leak to the back surface of the substrate during the lens molding process when the lens resin is insert-molded. If the lens resin leaks to the back surface of the substrate, not only will the lens not be molded in the desired shape, but the resin will also adhere to the mounting electrode pattern on the back surface of the substrate, causing problems such as an impediment to mounting the light-emitting device on the mounting substrate.

[0011] An object of the present invention is to prevent peeling from occurring at the boundary between the fiber reinforced resin substrate and an adhesive resin material in a semiconductor light emitting device using a fiber reinforced resin substrate with a metal core inserted therein. [Means for solving the problem]

[0012] In order to achieve the above object, the semiconductor light emitting device of the present invention has a substrate, a semiconductor light emitting element mounted on the substrate, and a resin lens arranged on the substrate so as to fill the periphery of the semiconductor light emitting element. The substrate includes a plate-shaped fiber-reinforced resin base material, a through hole penetrating the substrate in the thickness direction, a metal core arranged in the through hole, an adhesive resin filling the space between the metal core and the inner wall of the through hole, and a metal pattern covering at least the upper surface of the metal core. The semiconductor light emitting element is die-bonded to the area directly above the metal core of the metal pattern. One or more vent holes are provided on the upper or rear surface of the substrate, the vent holes being deep enough to reach the substrate. Effect of the Invention

[0013] According to the present invention, by heating the substrate before molding the resin lens, gases such as moisture in the substrate are released through the vent holes, thereby making it possible to prevent peeling from occurring at the boundary between the fiber-reinforced resin base material and the adhesive resin material. [Brief description of the drawings]

[0014] [Figure 1] 1A and 1B are a cross-sectional view and a bottom view of a semiconductor light-emitting device 1 according to an embodiment, FIG. 1C is a top view of the semiconductor light-emitting device 1 with a resin lens 30 removed, and FIG. 1D is a circuit diagram. [Diagram 2] 3(a) to 3(c) are cross-sectional views of an exhaust hole of the semiconductor light emitting device 1 according to the embodiment. [Diagram 3] 3A and 3B are a top view and a cross-sectional view of a semiconductor light emitting element 20 of the semiconductor light emitting device 1 according to the embodiment. [Figure 4] 5(a) to 5(g) are cross-sectional views showing a process for manufacturing the semiconductor light emitting device 1 according to the embodiment. [Diagram 5]5(h) to 5(k) are cross-sectional views showing manufacturing steps of the semiconductor light emitting device 1 according to the embodiment. [Figure 6] 5(l) to 5(m) are cross-sectional views showing manufacturing processes for the semiconductor light emitting device 1 according to the embodiment. [Figure 7] 5(n) to 5(o) are cross-sectional views showing manufacturing processes for the semiconductor light emitting device 1 according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] A semiconductor light emitting device according to one embodiment of the present invention will be described below.

[0016] The configuration of the semiconductor light emitting device 1 of the embodiment will be described with reference to Figs. 1(a)-(d), 2(a)-(c), 3(a) and 3(b). Figs. 1(a) and 1(b) are a cross-sectional view and a bottom view of the semiconductor light emitting device 1, and Fig. 1(c) is a top view of the semiconductor light emitting device 1 with the resin lens 30 removed. Fig. 1(d) is a circuit diagram. In Fig. 1(c), the top view is hatched to clearly show the metal pattern, the light emitting device 20, and the top surfaces of the ventilation holes 15a and 15b. Figs. 2(a)-(c) are cross-sectional views of the ventilation holes. Figs. 3(a) and 3(b) are top and cross-sectional views of the semiconductor light emitting device 20. In Fig. 3(a), the top view is hatched to show the n-type electrode 206.

[0017] 1(a), the semiconductor light emitting device 1 includes a substrate 10, a semiconductor light emitting element 20 mounted on the substrate 10, and a resin lens 30. The resin lens 30 is disposed on the substrate 10 so as to cover and seal the periphery of the semiconductor light emitting element 20.

[0018] The lens 30 is dome-shaped and is made of a resin that is transparent to the light emitted by the semiconductor light-emitting element 20 (for example, a silicone resin or an epoxy resin).

[0019] The substrate 10 includes a plate-shaped fiber-reinforced resin base material 11, a metal core 12, and an adhesive resin 13. The base material 11 is provided with a through hole 11a penetrating in the thickness direction, and a columnar metal core 12 with rounded corners is disposed in the center of the through hole 11a. Here, the top surface shape of the metal core 12 is rectangular, and the opening shape of the through hole 11a is circular. The material of the metal core 12 is, for example, copper.

[0020] The adhesive resin 13 fills the space between the metal core 12 and the inner wall of the through hole 11a. The adhesive resin 13 is, for example, an epoxy resin.

[0021] 2(a) to 2(c), the fiber reinforced resin substrate 11 includes one or more fiber layers 11b woven like a cloth, and resin is impregnated between the fibers constituting the fiber layer 11b. The surfaces (upper and lower surfaces) of the fiber layer 11b are covered with resin layers 11c and 11d. The fiber reinforced resin substrate 11 can be a glass fiber reinforced epoxy resin substrate (FR4: Flame Retardant Type 4) in which the fiber layer 11b is made of glass, and the impregnated resin and the resin layers 11c and 11d are made of epoxy resin.

[0022] The thermal expansion coefficient of copper is 17.7 x 10 -6 / ℃, and the thermal expansion coefficient in the main plane direction of the glass fiber reinforced epoxy resin (FR4) base material is 14.0×10 -6 / ℃, and the thermal expansion coefficient of epoxy resin is 4.5~6.5×10 -5 / ℃.

[0023] A metal pattern 50 is disposed on the upper surface of the substrate 10, covering the upper surface of the metal core 12. The upper surface shape of the metal pattern 50 is a rectangle with rounded corners, which is larger than the upper surface of the metal core 12 and is partially smaller than the through-hole 11a of the base material 11. Specifically, it is smaller at the center of the four sides of the rectangle and larger at the corners (four corners) where the sides intersect.

[0024] The semiconductor light emitting element 20 is smaller than the metal pattern 50, and is die-bonded to the region directly above the metal core 12 of the metal pattern 50 via a bonding layer 21. The bonding layer 21 is, for example, a conductive gold-tin alloy (Au—Sn) layer.

[0025] In addition, a circular wiring pattern 60 is disposed around the metal pattern 50. The base material 11 is exposed between the inner periphery of the circular wiring pattern 60 and the edge of the metal pattern 50, and the two are not in contact with each other.

[0026] Two protruding bonding pads 63 are provided at an interval of 180 degrees on the inner circumference 61 of the annular wiring pattern 60. The two bonding pads 63 are respectively connected to the upper electrode 209 of the semiconductor light emitting element 20 by two bonding wires 40. The detailed structure of the semiconductor light emitting element 20 will be described later.

[0027] A protruding protective element placement portion 65 for mounting the protective element 22 is provided on an inner circumference 61 of the annular wiring pattern 60. The protective element placement portion 65 is provided at a position between two bonding pads 63. A lower electrode of the protective element 22 is joined to the protective element placement portion 65 by a conductive bonding layer (not shown).

[0028] In addition, a protruding protective element bonding pad 51 is provided on the outer periphery of the metal pattern 50 near the protective element placement portion 65. The upper surface electrode (not shown) of the protective element 22 and the protective element bonding pad 51 are connected by a bonding wire 41.

[0029] Furthermore, a conductive via 64 penetrating the base material 11 is disposed at one location on the inner circumference 61 of the annular wiring pattern 60 , and the upper surface of the conductive via 64 is electrically connected to the annular wiring pattern 60 .

[0030] The lower surface of the conductive via 64 is electrically connected to a mounting electrode (cathode) 93 provided on the rear surface of the substrate 10.

[0031] In addition, a cathode mark 300 is also provided on the substrate 11.

[0032] Meanwhile, mounting electrodes (anodes) 91 and 92 connected to each other are provided on the back surface of the substrate 10, in addition to a mounting electrode (cathode) 93. The mounting electrode (anode) 92 contacts the lower surface of the metal core 12, and the two are electrically connected to each other.

[0033] As a result, by supplying a current between the mounting electrode (cathode) 93 and the mounting electrode (anode) 91, a current can be supplied to the semiconductor light emitting element 20 and the protective element 22, causing the semiconductor light emitting element 20 to emit light.

[0034] The metal pattern 50, the wiring pattern 60, and the mounting electrodes 91, 92, and 93 have a copper (Cu) layer as a main material layer, and nickel (Ni) and gold (Au) are plated in this order as a coating layer covering the surface of the main material layer. The conductive via 64 is connected to the Cu main material layer. The main material layer or the coating layer may be made of a metal with good conductivity such as aluminum (Al), silver (Ag), titanium (Ti), tungsten (W), or chromium (Cr).

[0035] The semiconductor light emitting element 20 and the protection element 22 are connected in anti-parallel as shown in Fig. 1(d). The protection element 22 is a Zener diode, and protects the semiconductor light emitting element 20 by keeping the voltage applied to the semiconductor light emitting element 20 constant.

[0036] The light emitted by the semiconductor light emitting element 20 is collected by the lens 30 and emitted to the outside.

[0037] In this embodiment, one or more vent holes 15a, 15b having a depth reaching the base material are provided on the upper surface or rear surface of the substrate 10. It is desirable that the vent holes 15a, 15b reach the fiber layer.

[0038] The ventilation holes 15a, 15b are holes that function to release gas contained in the substrate 11 to the outside of the substrate 11. The substrate 11 contains residual gas that is generated when the fiber layer 11b is impregnated with resin during the manufacture of the substrate 11, as well as atmospheric components and moisture absorbed by the resin. When the substrate 11 is heated during the manufacturing process of the semiconductor light-emitting device 1, these gases flow inside the substrate 11 in a direction parallel to the main plane of the substrate 11 along the fibers of the fiber layer 11b, and are released to the outside from the cross section of the fiber layer 11b.

[0039] In the embodiment, the vent holes 15a, 15b are provided so as to reach the fiber layer 11b. With this structure, the gas contained in the base material 11 is released to the outside from the inner wall surfaces of the vent holes 15a, 15b, which form the cross section of the fiber layer 11b. Therefore, the boundary surface between the inner wall of the through hole 11a, which forms the end face of the fiber layer 11b of the base material 11, and the adhesive resin 13 can be prevented from peeling (cracks) due to gas vaporized or expanded by heat.

[0040] It should be noted that the vent hole 15b is disposed in an area outside the annular wiring pattern 60, whereas the vent hole 15a is provided to have an opening in an area between the annular wiring pattern 60 and the metal pattern 50. This allows the vent hole 15a to come into contact with the lens 30, and the resin that forms the lens 30 can be filled into the vent hole 15a in the lens 30 molding process. With this configuration, the vent hole 15a also functions as an anchor hole that firmly fixes the lens 30 to the substrate 11.

[0041] The shape of the vent holes 15a and 15b may be flat at the bottom as shown in Fig. 2(a) or may be cone-shaped at the bottom as shown in Fig. 2(b). Also, the vent holes 15a and 15b may penetrate the base material 11 as shown in Fig. 2(c).

[0042] 2(c), any one of the mounting electrodes 91 to 93 is located at the lower end of the air vent holes 15a, 15b. With this configuration, when the air vent holes 15a, 15b are formed by laser processing, the mounting electrodes 91 to 93 function as a penetration prevention layer.

[0043] In this embodiment, by providing vent holes 15a, 15b in base material 11, even if heat is applied to adhesive resin 13 and base material 11 made of fiber-reinforced resin during the manufacturing process, gas within base material 11 can be released to the outside through vent holes 15a, 15b, and adhesive resin 13 can be prevented from peeling off from the inner wall of the opening of through hole 11a.

[0044] Therefore, during the manufacturing process of the semiconductor light emitting device 1, the resin of the lens 30 in an uncured state does not pass through the boundary surface between the adhesive resin 13 and the fiber-reinforced resin base material 11, and the uncured resin can be prevented from reaching the rear surface of the substrate 10 and adhering to the mounting electrodes 91-93.

[0045] Next, the configuration of the semiconductor light emitting device 20 will be described with reference to FIGS.

[0046] The semiconductor light emitting element 20 has a lower electrode (anode) 208 on the lower surface and a pair of upper electrodes (cathode) 209 on the upper surface, and emits light (infrared light in this case) upward. The cross-sectional structure may be any structure, but for example, a laminate structure in which a p-side electrode (reflective) 202, a p-type semiconductor layer 203, a light emitting layer (MQW: multi quantum well) 204, an n-type semiconductor layer 205, and an n-side electrode 206 are laminated in this order on a support substrate (silicon) 201 as shown in FIGS. 2(a) and 2(b) can be used. The n-side electrode 206 has a lattice shape as shown in FIG. 3(a). An upper electrode (n-side electrode pad) 209 is disposed on a part of the n-side electrode 206. The upper surface and side surfaces of the laminate, except for the upper surface of the upper electrode 209, are covered with a protective film 207.

[0047] Next, a manufacturing process for the semiconductor light emitting device of this embodiment will be described below with reference to FIGS. <Step S1: Core formation process> First, to form the metal core 12, as shown in FIG. 4(a), a copper base material 112 having a thickness equivalent to that of the metal core 12 is prepared, and a support film (resin film) 113 is attached to the upper surface.

[0048] A mask is placed on the underside of the copper base material 112 to cover the portion that will become the metal core 12, and the exposed portion of the copper base material 112 is removed by etching to produce the metal core 12 supported by the support film 113 as shown in Figure 3(b).

[0049] <Step S2: Drilling process> Meanwhile, a molded glass fiber reinforced epoxy resin substrate is prepared as substrate 110. Substrate 110 has a width equivalent to that of substrate 11 of the semiconductor light emitting device in Fig. 2, and has a shape in which a plurality of substrates 11 are connected in the longitudinal direction. A covering film (resin film) 114 is attached to the lower surface of substrate 110.

[0050] In the base material 110, for each region of the base material 11, a through hole 11a for inserting the metal core 12 and a through hole (not shown) for forming the conductive via 64 are formed by punching.

[0051] <Step S3: Layering process> As shown in FIG. 4(e), the metal core 12 produced in step S1 is inserted into and aligned with the center of the through hole 11a of each unit of base material 11 produced in step S2.

[0052] <Step S4: Prepreg bonding process> As shown in FIG. 4(f), an uncured epoxy resin layer (prepreg layer 115) is attached under the covering film 114 on the underside of the substrate 110 so as to cover the underside of the through hole 11a into which the metal core 12 was inserted in step S3.

[0053] <Step S5: Pressing and hardening process> 4(g), the prepreg layer 115 is pressed into the gap between the inner wall of the through hole 11a of the base material 110 and the outer wall of the metal core 12 by applying pressure with a press, and then heated to harden the prepreg layer 115. As a result, the metal core 12 and the inner wall of the base material 110 are bonded together by the adhesive resin 13 made of epoxy resin.

[0054] <Step S6: Film Removal Process> As shown in FIG. 5(h), the support film 113 of the metal core 12 is peeled off, and the covering film 114 on the lower surface of the base material 110 is peeled off and removed together with the cured prepreg layer 115 on the lower surface thereof.

[0055] <Step S7: Plating process> 5(i), electroless plating and electrolytic plating are performed to form copper layers 150, 190 on the upper and lower surfaces, respectively, of the base material 110. At the same time, the copper layer is filled into the through holes for the conductive vias in the base material 110, and the conductive vias 64 are formed.

[0056] <Step S8: Wiring electrode formation process> As shown in FIG. 5(j), a mask is formed on the surfaces of the copper layers 150 and 190 on the upper and lower surfaces of the base material 110, respectively, and unnecessary portions are removed by etching.

[0057] As a result, a metal pattern 50 and an annular wiring pattern 60 are formed on the upper surface of the base material 110 for each region of the base material 11, and mounting electrodes 91, 92, and 93 are formed on the rear surface of the base material 11.

[0058] Thereafter, the surfaces of the metal pattern 50, the wiring pattern 60, and the mounting electrodes 91, 92, and 93 are plated with Ni and Au in this order.

[0059] <Step S9: Vent hole forming process> As shown in Fig. 5(k), holes are opened from the upper surface of the base material 11 by laser processing or micro drilling to form the vent holes 15a and 15b. The positions where the vent holes 15a and 15b are formed are shown in Figs. 1(b) and (c).

[0060] The depth of the ventilation holes 15a, 15b is set by adjusting the irradiation conditions of the laser light and by the descending depth of the microdrill in the microdrill processing. It may be a depth that penetrates the base material 11 but does not penetrate the mounting electrodes 91, 92, 93 as shown in Figures 5(k) and 2(c), or it may be a depth that reaches the fiber layer 11b of the base material 11 as shown in Figures 2(a) and (b).

[0061] <Step S10: Element mounting process> (Die bonding) Au-Sn solder paste is applied onto the metal pattern 50 as a die attach material.

[0062] The semiconductor light emitting element 20 is mounted on the solder paste.

[0063] The Au--Sn is melted and solidified in a reflow furnace at a predetermined temperature for a predetermined time (e.g., 320°C for 30 seconds) to form a bonding layer 21, and the semiconductor light-emitting element 20 is bonded to the metal pattern 50 by the bonding layer 21 (see FIG. 6(l)). (Wire Bonding) Furthermore, the two upper electrodes 209 of the semiconductor light emitting element 20 and the two corresponding bonding pads 63 of the wiring pattern 60 are connected by bonding wires (eg, gold wires) 40 (see FIG. 6(l)).

[0064] <Step S11: Mold setting process> 6(m), the substrate 10 on which the semiconductor light emitting element 20 is mounted is set in a mold 160 of a resin molding machine (insert molding machine). The space within the mold 160 communicates with the base material 110 in the longitudinal direction.

[0065] The mold 160 is heated to 145° C. to heat the substrate 10 and degas the gas components contained in the substrate 10. Specifically, the residual gas contained in the base material 11 and the atmospheric components and moisture absorbed by the resin are gasified by heating, moved inside the base material 11 in a direction parallel to the main plane of the base material 11 along the fibers of the fiber layer 11b, and released to the outside from the cross sections of the fiber layer 11b on the inner walls of the degassing holes 15b, 15b. This suppresses the release of gas from the boundary surface between the inner wall of the through hole 11a of the base material 11 and the adhesive resin 13, and prevents peeling (cracks) from occurring at the boundary surface between the base material 11 and the adhesive resin 13.

[0066] <Step S12: Lens formation process> As shown in FIG. 7(n), the resin 130 for the lens 30 is injected into the space in the mold 160 and is held for, for example, 120 seconds (cure time).

[0067] At this time, heat from the mold 160 and the resin 130 is conducted to the base material 11, but since the gas and moisture within the base material 11 have already been released through the vent holes 15a, 15b, no peeling occurs at the interface between the adhesive resin 13 and the base material 11 made of fiber-reinforced resin.

[0068] Therefore, although the resin 130 before curing is in a liquid state, it does not penetrate into the boundary surface between the adhesive resin 13 and the base material 11 made of fiber-reinforced resin, and does not reach the back surface of the base material 11.

[0069] After the resin material is injected, the lens resin 130 is cured by heating, for example, at 150° C. for two hours (after cure). This allows the lens 30 to be formed by transfer molding, filling the space around the semiconductor light emitting element 20 and having a surface with a desired lens shape.

[0070] The lens 30 can be molded not only by transfer molding, but also by compression molding or injection molding.

[0071] <Step S13: Singulation process> (Hole formation at the four corners) Through holes are made with a drill or the like at the four corners of the base material 11, which will form one unit of the semiconductor light emitting device 1.

[0072] By opening the through holes at the four corners, no burrs are generated at the four corners of the semiconductor light emitting device 1 in the subsequent dicing step, and the device can be cut cleanly.

[0073] (Dicing) 7(o), the base material 11 is cut with a dicing blade 140 along the boundary lines between the individual units of the semiconductor light emitting device 1 to separate them. In this way, the semiconductor light emitting devices 1 can be manufactured.

[0074] In this manner, the provision of the ventilation holes 15a and 15b in the semiconductor light emitting device 1 of the embodiment can prevent peeling from occurring at the interface between the fiber reinforced resin substrate and the adhesive resin material. Therefore, in the process of forming the lens 30, uncured resin does not get into the interface between the fiber reinforced resin substrate 11 and the adhesive resin 13, and the uncured resin does not reach the back surface of the substrate 11.

[0075] Therefore, it is possible to form the lens 30 in the shape as designed. Furthermore, the resin does not adhere to the mounting electrodes 91, 92, and 93 on the back surface of the substrate 10, and the yield when the semiconductor light emitting device 1 is mounted on the mounting substrate can be improved.

[0076] In the embodiment described above, the surface of the resin that covers and seals the periphery of the semiconductor light-emitting element 20 is shaped like a lens 30, but it does not necessarily have to be in the shape of a lens 30, and any structure that seals the periphery of the semiconductor light-emitting element 20 may be used.

[0077] <<Comparative Example>> As comparative examples, a number of comparative semiconductor light-emitting device samples were manufactured without providing ventilation holes 15a, 15b, while maintaining other conditions the same as those of the examples. It was found that resin leaked onto the underside of substrate 10 in some of the comparative sample samples.

[0078] Furthermore, when the interface between the adhesive resin 13 and the fiber-reinforced resin substrate 11 of the comparative example was checked, peeling was confirmed in parts of the interface after the element mounting process of step S10.

[0079] The verification results of the examples and comparative examples are summarized in Table 1.

[0080] [Table 1]

[0081] The semiconductor light emitting devices according to the above-described embodiments can be used as general-purpose light sources, observation light sources for analyzers, and the like. [Explanation of symbols]

[0082] 1. Semiconductor light-emitting device 10 Substrate 11 Base material 11a Through hole 11b Fiber layer 11c resin layer 12 Metal Core 13 Adhesive resin 15a Ventilator 15b Vent hole 20 Semiconductor light emitting device 21 Bonding layer 22 Protection elements 22 Protection element placement section 30 Lenses 40 Bonding Wire 41 Bonding Wire 50 Metal Pattern 51 Bonding pad for protection element 60 Wiring Pattern 61 Inner circumference 63 Bonding Pad 64 Conductive Vias 65 Protection element placement section 91 Mounting electrode 110 Base material 112 Copper base material 113 Support Film 114 Covering film 115 Prepreg layer 130 Resin 140 Dicing Blade 150 copper layers 160 Molds 203 p-type semiconductor layer 205 n-type semiconductor layer 206 n-side electrode 207 Protective film 209 upper electrode

Claims

1. A substrate, a semiconductor light emitting element mounted on the substrate, and a resin lens disposed on the substrate so as to fill the periphery of the semiconductor light emitting element, The substrate includes a plate-shaped fiber-reinforced resin base material, a through hole penetrating the base material in a thickness direction, a metal core disposed in the through hole, an adhesive resin filling the space between the metal core and the inner wall of the through hole, and a metal pattern covering at least an upper surface of the metal core, the semiconductor light emitting element is die-bonded to a region directly above the metal core of the metal pattern; A semiconductor light emitting device, characterized in that one or more ventilation holes having a depth reaching the base material are provided on the upper surface or the rear surface of the substrate.

2. 2. The semiconductor light emitting device according to claim 1, wherein the base material has one or more fiber layers woven into a cloth-like shape, a resin impregnated between the fibers constituting the fiber layers, and a resin layer covering a surface of the fiber layers; The semiconductor light emitting device is characterized in that the ventilation holes reach the fiber layer.

3. 2. The semiconductor light emitting device according to claim 1, wherein a mounting electrode is disposed on a rear surface of the substrate, The semiconductor light emitting device is characterized in that the ventilation hole has an opening on the upper surface of the base, penetrates the base, reaches the mounting electrode, and does not penetrate the mounting electrode.

4. 2. The semiconductor light emitting device according to claim 1, wherein a circular wiring pattern is disposed on the upper surface of the base so as to surround the metal pattern; A semiconductor light-emitting device characterized in that the ventilation hole is provided in a region on the upper surface of the base material outside the annular wiring pattern on the upper surface of the substrate, and / or in a region between the annular wiring pattern and the metal pattern.

5. 2. The semiconductor light emitting device according to claim 1, wherein the fiber reinforced resin substrate is a glass fiber reinforced epoxy resin substrate, and the adhesive resin is an epoxy resin.

6. Bonding a semiconductor light emitting element onto a substrate; and heating and molding the sealing member using a molding die so as to fill the periphery of the semiconductor light emitting element on the substrate, The substrate includes a plate-shaped fiber-reinforced resin base material, a through hole penetrating the base material in a thickness direction, a metal core disposed in the through hole, an adhesive resin filling the space between the metal core and the inner wall of the through hole, and a metal pattern covering at least an upper surface of the metal core, One or more vent holes having a depth reaching the base material are provided on the upper surface or the rear surface of the substrate, the bonding step is a step of applying a die attach material to a region directly above the metal core of the metal pattern, and then heating the die attach material to form an alloy bonding layer, thereby bonding the semiconductor light emitting element and the metal pattern; A method for manufacturing a semiconductor light emitting device, comprising the steps of: heating the substrate and releasing gas contained in the substrate through the vent holes after the bonding step and before the molding step.

7. 7. A method for manufacturing a semiconductor light emitting device according to claim 6, wherein the molding step is a step of molding the sealing member by transfer molding.

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