Substrate processing device

Abstract

To provide a substrate processing device in which the positioning of a susceptor ring is well thought out.SOLUTION: The substrate processing device includes: a plurality of protrusions (protruding parts) 502 in one of the upper surface of a dispersion plate and the lower surface of a susceptor ring; and a plurality of trenches 501 (recessed parts) in the other of the upper surface of the dispersion plate and the lower surface of the susceptor ring. The susceptor ring is positioned on the dispersion plate in such a manner that the protrusions 502 are inserted into the trenches 501 so that side surfaces of the protrusions 502 become in contact with the inner surfaces of the trenches 501.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for etching a film previously formed on a substrate. [Background technology]

[0002] Japanese Patent Laid-Open Publication No. 2017-143186 (Patent Document 1) discloses performing an atomic layer level etching process on a film formed on a semiconductor wafer.

[0003] Specifically, first, activated species (radicals) of a processing gas formed using plasma are supplied to the upper surface of a film formed on a semiconductor wafer and attached to the upper surface, thereby forming a product layer on the upper surface. Then, electromagnetic waves in a wavelength range including infrared rays are irradiated onto the semiconductor wafer from lamps arranged in a ring shape surrounding the upper region of the semiconductor wafer, thereby forming a product layer that is desorbed and volatilized. As a result, the product layer formed to a thickness equivalent to that of an atomic layer can be removed. From the above, an etching process can be performed by repeatedly performing a process for forming a product layer and a process for desorbing and volatilizing the product layer.

[0004] Here, there is a risk that the etching process may also etch the components arranged in the processing chamber. In particular, if the components near the sample stage are etched, foreign matter generated by the etching may adhere to the semiconductor wafer. As a result, there is a concern that pattern defects may occur, or that the sample stage may be worn out, causing an electrical path between the sample stage and the internal electrodes, resulting in a breakdown of the substrate processing apparatus.

[0005] In response to this concern, chemical or physical cleaning has been considered. A representative example is the technique disclosed in JP 2022-152246 A (Patent Document 2). This technique involves introducing gas from the outer periphery of the sample stage to suppress the diffusion of radicals to the side surface of the sample stage and removing any remaining foreign matter with heated gas. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2017-143186 A [Patent Document 2] Patent Publication No. 2022-152246 Summary of the Invention [Problem to be solved by the invention]

[0007] However, the above-mentioned techniques do not sufficiently consider the following points.

[0008] For example, the part (dispersion plate) that diffuses the gas introduced to the outer periphery of the sample stage in the circumferential direction requires high processing precision in the flow path, so metals such as SUS are used.

[0009] On the other hand, in order to prevent the semiconductor wafer from being contaminated by the metal parts etched in the etching process, the metal parts arranged near the sample stage are covered with insulating parts such as quartz, etc. Therefore, the dispersion plate is also covered with a quartz susceptor ring.

[0010] In this regard, the minute gap between the side surface of the sample stage and the susceptor ring is used as a gas flow path near the sample stage, and the centering of the susceptor ring affects the circumferential uniformity of the gas. However, for example, when aligning the susceptor ring using a feeler gauge, there is a problem that the above-mentioned minute gap varies depending on the working conditions.

[0011] In addition, the susceptor ring is heated to about 200°C during the etching process. Here, the linear expansion coefficient of metals such as SUS is two orders of magnitude larger than that of quartz. For this reason, the susceptor ring and the dispersion plate cannot be fixed together with bolts due to the difference in linear expansion coefficient.

[0012] As a result, there is also a problem that the centering of the susceptor ring is shifted due to vibrations generated in the substrate processing apparatus during the etching process, resulting in non-uniform gas blowing. If the gas blowing becomes non-uniform in the circumferential direction, problems such as the retention of foreign matter in areas with low blowing flow rate and wear of the sample stage occur, and the radical distribution on the semiconductor wafer changes in the circumferential direction during the etching process, resulting in a problem of process controllability in that the in-plane uniformity of the etching process deteriorates.

[0013] SUMMARY OF THE PRESENT EMBODIMENTS The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus in which a technique for fixing the position of a susceptor ring is implemented. [Means for solving the problem]

[0014] a sample stage substrate on which a substrate can be placed; a step portion provided on the outer periphery of the sample stage substrate; an internal pipe provided within the sample stage substrate and reaching a lower surface of the step portion; a distribution plate provided on the lower surface of the step portion and having a groove for diffusing gas supplied from the internal pipe toward a cylindrical step side surface of the step portion; a susceptor ring provided on the distribution plate; a ring-shaped gap provided between the susceptor ring and the step side surface and for allowing the gas diffused to the step side surface to flow upward; Effect of the Invention

[0015] According to one embodiment, a substrate processing apparatus capable of performing stable etching processing can be provided by fixing a susceptor ring to a dispersion plate. [Brief description of the drawings]

[0016] [Figure 1]1 is a cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment. [Diagram 2] 2 is a cross-sectional view illustrating a schematic configuration of a stage gas supply mechanism of the substrate processing apparatus. FIG. [Diagram 3] FIG. 4 is a diagram showing a schematic structure of the upper surface side of the dispersion plate. [Figure 4] FIG. 2 is a diagram illustrating a schematic structure of a lower surface side of a susceptor ring. [Diagram 5] 11A to 11C are diagrams showing a procedure for aligning the protrusions of the dispersion plate and the grooves of the susceptor ring. [Figure 6] 11A to 11C are diagrams showing a procedure for aligning the protrusions of the susceptor ring with the grooves of the dispersion plate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] In all the drawings for explaining the embodiments, the same members are generally designated by the same reference numerals, and the repeated explanations thereof will be omitted. In addition, hatching may be applied even to plan views in order to make the drawings easier to understand.

[0018] <Configuration of the substrate processing apparatus> The substrate processing apparatus according to this embodiment will be described. FIG. 1 is a cross-sectional view that illustrates a schematic configuration of a substrate processing apparatus according to the present embodiment. 1, the substrate processing apparatus 100 includes a vacuum vessel 101, a discharge unit 102 constituting the upper part of the vacuum vessel 101 and generating plasma therein, and a sample stage 103 constituting the lower part of the vacuum vessel 101 and on which a semiconductor wafer (hereinafter, may be referred to as a wafer 1019) is placed. The sample stage 103 is disposed inside a processing chamber 104 provided in the lower part of the vacuum vessel 101. In other words, the sample stage 103 is a stage on which the wafer 1019 to be processed is placed, and is disposed in the processing chamber 104 inside the vacuum vessel 101.

[0019] The substrate processing apparatus 100 also has an IR lamp unit 105 for heating a wafer 1019 on a sample stage 103, and an ion shield plate 106 made of a dielectric material and having through holes for allowing radical particles contained in plasma to pass through. The ion shield plate 106 is provided in a passage connecting the discharge unit 102 and the processing chamber 104.

[0020] In the substrate processing apparatus 100, the internal spaces of the processing chamber 104 and the discharge section 102 are cylindrical spaces, and their central axes are arranged coaxially or at positions that are nearly equivalent to each other. The processing chamber 104 and the discharge section 102 are separated by a circular ion shield plate 106, which is also arranged so that its central axis coincides with those of the processing chamber 104 and the discharge section 102 or at a position that is nearly equivalent to each other. The processing chamber 104 and the discharge section 102 are communicated with each other through a plurality of through holes provided concentrically in the ion shield plate 106.

[0021] The discharge unit 102 has a function of generating plasma 1011 by introducing a processing gas 1013, and is configured so that the state of the generated plasma can be observed by optical techniques.

[0022] The substrate processing apparatus 100 is provided with a supply path for supplying the processing gas 1013 to the discharge unit 102. Furthermore, the substrate processing apparatus 100 has a supply path disposed above the sample stage 103 for supplying the plasma 1011 generated based on the processing gas 1013 for processing the wafer 1019 into the processing chamber 104. Thus, the plasma 1011 is generated from the processing gas 1013 supplied to the discharge unit 102, and the generated plasma 1011 is introduced into the processing chamber 104 located below the discharge unit 102.

[0023] A cylindrical quartz chamber (dielectric chamber) 107 maintained in a vacuum is installed in the discharge section 102, and an ICP coil 108 is installed on the outside of the quartz chamber 107. The ICP coil 108 is connected to a high-frequency power source via a matching box, and has a function of generating plasma 1011 in the quartz chamber 107 by an ICP (Inductively Coupled Plasma) discharge method. Here, for example, a frequency band of several tens of megahertz, such as 13.56 MHz, is used as the frequency of the high-frequency power.

[0024] The discharge unit 102 is provided with a top plate 1014. An ion shield plate 106 is provided below the top plate 1014, and the process gas 1013 is introduced into the process chamber 104 through the ion shield plate 106.

[0025] A seal member such as an O-ring is interposed between the top plate 1014 and the upper surface of the quartz chamber 107. This makes the inside of the discharge unit 102 airtightly sealed.

[0026] The supply flow rate of the process gas 1013 is adjusted by a mass flow controller installed for each gas type. As the process gas 1013, a combustible gas, a combustion supporting gas, a mixed gas of these, or a mixed gas diluted with an inert gas is used.

[0027] An exhaust opening is provided at the bottom of the processing chamber 104 in order to reduce the pressure inside the vacuum vessel 101, and the vacuum vessel 101 is connected to a vacuum pump 1017 through an exhaust pipe from this opening. A pressure adjustment valve is provided on the path between the opening and the vacuum pump 1017, and adjusts the exhaust flow rate or speed by increasing or decreasing the flow path cross-sectional area of ​​the path or opening.

[0028] In the processing chamber 104 , a sample stage 103 on which a wafer 1019 is mounted is disposed at a position that coincides with the central axis of the discharge unit 102 and the processing chamber 104 or that can be regarded as being approximately the same.

[0029] An IR lamp unit 105 for heating a wafer 1019 is installed between the sample stage 103 and the discharge unit 102. The IR lamp unit 105 mainly comprises an IR lamp 1020, a reflector 1021 for reflecting IR light, and a light-transmitting window 1022.

[0030] A circular lamp is used as the IR lamp 1020. That is, the IR lamps 1020, which irradiate the wafer 1019 with electromagnetic waves to heat the wafer, are arranged in a ring shape above the sample stage 103 around the supply path of the plasma 1011.

[0031] The light emitted from the IR lamp 1020 is light (sometimes called IR light) that mainly has a wavelength range from the visible light region to the infrared light region.

[0032] The IR lamp unit 105 has a light-transmitting window 1022 made of quartz arranged from its lower surface to its inner peripheral wall surface to allow IR light to pass therethrough.

[0033] The inner space around the inner periphery of the IR lamp unit 105 is a flow path through which the plasma 1011 generated by the discharge unit 102 arranged above flows. In this flow path, a dielectric ion shield plate 106 is installed, which blocks ions or electrons contained in the plasma 1011 while allowing neutral particles or radicals of the gas to pass through. The substrate processing apparatus 100 is configured as described above.

[0034] <Wafer Processing Method Using Substrate Processing Apparatus> In the substrate processing apparatus 100, a processing method is performed on the wafer 1019. This processing method includes a step of (1) forming a reaction product layer by radicals on the surface of the wafer 1019, and (2) irradiating the wafer 1019 on which the reaction product layer has been formed with electromagnetic waves including infrared rays to heat the surface of the wafer 1019 and remove the reaction product layer.

[0035] In the process of forming the reaction product layer, first, a process gas is supplied to a radical generation space in the upper part of the process chamber 104, and radical particles are generated by activating the gas. The generated radical particles are supplied to the upper surface of a wafer 1019 placed in the process chamber 104 through a gas introduction pipe connected to the process chamber 104, and a reaction product layer is formed on the upper surface of the wafer 1019. That is, the radical particles are introduced onto the wafer 1019 placed on the sample stage 103, and a reaction product layer is formed on the surface of the film to be processed that has been formed in advance on the upper surface of the wafer 1019.

[0036] Next, in the reaction product layer removal process, electromagnetic waves including infrared light are irradiated from the IR lamp unit 105 arranged above the wafer 1019, and the products constituting the reaction product layer formed on the upper surface of the wafer 1019 are vaporized. This removes the reaction product layer. These processes are alternately repeated to etch the film to be processed. In the manner described above, the wafer processing method is carried out using the substrate processing apparatus.

[0037] <Detailed configuration of the substrate processing apparatus> The configuration of the stage gas supply mechanism for introducing gas from the outer periphery of the sample stage will be described below. FIG. 2 is a cross-sectional view showing a schematic configuration of the stage gas supply mechanism of the substrate processing apparatus 100. In FIG. 2, the sample stage 103 has a cylindrical structure coaxial with the central axis of the processing chamber, and is configured to have a sample stage substrate 201, a sample adsorption film 202 provided on the upper surface of the sample stage substrate 201, and an electrode plate 203 embedded inside the sample adsorption film 202. A susceptor ring 205 is provided so as to surround the sample stage substrate 201 from the side. The sample stage 103 thus configured has a function of fixing and adsorbing a wafer 1019 and a cooling function.

[0038] The sample stage base material 201 is provided with a spiral coolant passage for cooling the sample stage 103, and the coolant is circulated and supplied by a chiller.

[0039] A resin sheet such as polyimide is attached to the sample adsorption film 202 so that the backside of the wafer 1019 is not scratched even if a heating / cooling cycle is performed while the wafer 1019 is adsorbed. As shown in FIG. 2, a plate-shaped electrode plate 203 is embedded inside the sample adsorption film 202 to fix the wafer 1019 by electrostatic adsorption. The electrode plate 203 is connected to a direct current power source (DC power source). Furthermore, a groove is provided in the sample adsorption film 202 so that He gas can be supplied between the wafer 1019 and the sample adsorption film 202. As a result, the sample stage 103, the temperature of which is controlled by a refrigerant path, and the wafer 1019 can be thermally contacted through He gas, and the wafer 1019 heated by the IR lamp unit can be efficiently cooled.

[0040] A quartz susceptor ring 205 is disposed on the outer periphery of the sample stage 103 to protect the sample stage from corrosion caused by the etching gas. The susceptor ring 205 is cylindrical and shares the same central axis as the sample stage 103, and its inner diameter is designed to match the diameters of the side walls of the sample stage substrate 201 and the sample adsorption film 202. The susceptor ring 205 is disposed so as to cover the portion of the sample stage 103 other than the portion where the wafer 1019 is placed.

[0041] A stage gas introduction mechanism 206 for removing foreign matter deposited on the side surface of the sample stage 103 and suppressing the intrusion of foreign matter is provided below the susceptor ring 205. The stage gas introduction mechanism 206 is a mechanism having a stage internal piping 207 and a dispersion plate 208.

[0042] The gas supplied by the stage internal piping 207 is diffused in the circumferential direction by the grooves 10 formed inside the dispersion plate 208, passes through the minute gap 209 (0.2 mm) between the susceptor ring 205 and the sample stage substrate 201, and escapes into the processing chamber from the back side of the wafer 1019.

[0043] The dispersion plate 208 is made of metal, such as SUS or anodized aluminum, in order to ensure processing accuracy of flatness, and is aligned with the sample stage base material 201 made of anodized aluminum and then fixed with bolts at multiple points.

[0044] In FIG. 2, a step portion 210 is provided on the outer periphery of the sample stage substrate 201, while a stage internal pipe 207 is provided inside the sample stage substrate 201. The stage internal pipe 207 is configured to reach the lower surface of the step portion 210. A dispersion plate 208 is disposed on the lower surface of the step portion 210. The dispersion plate 208 has a groove 10 that diffuses the gas supplied from the stage internal pipe 207 toward the cylindrical step side surface of the step portion. Specifically, for example, the groove 10 is composed of a ring-shaped ring groove 1 and a plurality of slits SL that are arranged at intervals in the circumferential direction on the inner periphery side of the ring groove 1 and are provided to communicate with the ring groove 1 and the fine gap 209. As a result, the gas supplied by the stage internal pipe 207 is diffused in the circumferential direction by the groove 10 formed inside the dispersion plate 208 and reaches the cylindrical step side surface of the step portion 210. In other words, the gas supplied to the dispersion plate 208 from the stage internal piping 207 is guided from the ring groove 1 provided in the dispersion plate 208 to the multiple slits SL, and then guided from the multiple slits SL to the micro gaps 209.

[0045] A susceptor ring 205 is disposed on the above-mentioned dispersion plate 208. As shown in FIG. 2, a micro gap 209 is provided between the susceptor ring 205 and the step side surface. The micro gap 209 is a ring-shaped gap that allows the gas diffused to the step side surface to flow upward. A wafer 1019 is disposed above the micro gap 209. That is, the micro gap 209 is provided so as to overlap with the wafer 1019 in a plan view.

[0046] <<Features of the embodiment>> Here, the feature of this embodiment is the connection structure between the susceptor ring 205 and the dispersion plate 208. For example, a plurality of convex portions (protrusions 302) are provided on one of the upper surface of the dispersion plate 208 or the lower surface of the susceptor ring 205, and a plurality of concave portions (grooves 402) are provided on the other of the upper surface of the dispersion plate 208 or the lower surface of the susceptor ring 205. The convex portions are inserted into the concave portions so that the side surfaces of the convex portions come into contact with the inner side surfaces of the concave portions, thereby positioning the susceptor ring 205 on the dispersion plate 208. A specific description will be given below with reference to the drawings.

[0047] FIG. 3 is a diagram showing a schematic structure of the upper surface side of the dispersion plate 208, and FIG. 4 is a diagram showing a schematic structure of the lower surface side of the susceptor ring 205. As shown in FIG.

[0048] 3, protrusions 302 (convex portions) are provided at three or more points on an upper surface 301 of a dispersion plate 208. Meanwhile, as shown in FIG 4, grooves 402 (concave portions) are provided on a lower surface 401 of a susceptor ring 205 at positions corresponding to the positions into which the protrusions 302 can be inserted.

[0049] Specifically, the planar shape of the dispersion plate 208 is a ring shape, and the planar shape of the susceptor ring 205 is also a ring shape. In this case, the planar shape of the groove 402 is a triangle shape. The triangle shape has a first side 402a extending in the radial direction of the ring shape, a second side 402b perpendicular to the first side 402a, and a hypotenuse 402c intersecting with each of the first side 402a and the second side 402b, and the inner side surface of the groove 402 includes the hypotenuse 402c. In this manner, the projection 302 and the groove 402 that can be fitted together are formed.

[0050] 5 is a diagram showing a schematic diagram of a procedure for aligning the protrusions 502 of the dispersion plate with the grooves 501 of the susceptor ring. As shown in FIG. 5, first, the susceptor ring is placed on the dispersion plate so that the protrusions 502 of the dispersion plate fit into the grooves 501 of the susceptor ring.

[0051] At this time, the protrusions 502 are not in contact with any of the inner surfaces (inner wall surfaces) of the grooves 501 of the susceptor ring. Next, the susceptor ring is rotated and adjusted so that the protrusions 502 are in contact with the inclined oblique sides 503 of the grooves 501. Then, the protrusions 502 are adjusted so that they are in contact with the oblique sides 503 of the grooves 501 at three or more points. In this way, the susceptor ring is positioned on the dispersion plate with the machining accuracy of the grooves 501 and the protrusions 502. Note that, in order to prevent eccentricity during rotation, the susceptor ring may be rotated while auxiliary thickness gauges are clamped at equal intervals at three or more points in the gap (micro gap 209 in FIG. 2) between the susceptor ring and the sample substrate.

[0052] According to the above-mentioned feature of the present embodiment, the following effects can be obtained. For example, during the processing of a wafer in a substrate processing apparatus, it is assumed that the susceptor ring is subjected to vibrations from a device such as a dry pump. In this regard, according to the feature of the present embodiment, the protrusion 502 and the oblique side 503 of the groove 501 are in contact with each other at three or more points, so that the position of the susceptor ring does not shift in the diametric direction. On the other hand, during the heat processing, the temperature of the susceptor ring and the temperature of the dispersion plate both reach approximately 200° C. due to the heat input. As a result, it is assumed that the susceptor ring made of quartz linearly expands 0.01 mm in the outer diameter direction, while the dispersion plate made of SUS or alumina linearly expands 0.5 mm in the outer diameter direction. However, in this case, due to the difference in linear expansion between the susceptor ring and the dispersion plate, the protrusion 502 is displaced in a direction away from the oblique side 503 of the groove 501, so that the two do not interfere with each other and are not damaged. Also, during the etching processing, the constant flow of gas can prevent foreign matter from accumulating in the groove 501.

[0053] As described above, according to the features of this embodiment, the susceptor ring can be reliably fixed in position to the dispersion plate without causing side effects, thereby providing a substrate processing apparatus that enables stable etching processing.

[0054] <Modification> For example, the lower surface of the susceptor ring may be provided with protrusions, while the upper surface of the dispersion plate may be provided with grooves. In this case, the same effects as those of the embodiment can be obtained.

[0055] 6 is a diagram showing a schematic diagram of a procedure for aligning the protrusions 602 of the susceptor ring with the grooves 601 of the dispersion plate. As shown in FIG. 6, first, the susceptor ring is placed on the dispersion plate so that the protrusions 602 of the susceptor ring fit into the grooves 601 of the dispersion plate.

[0056] At this time, the protrusions 602 are adjusted so as not to come into contact with any of the inner surfaces (inner wall surfaces) of the grooves 601 of the dispersion plate. Next, the susceptor ring is rotated and adjusted so that the protrusions 602 come into contact with the inclined oblique sides 603 of the grooves 601. Then, the protrusions 602 are adjusted so as to come into contact with the oblique sides 603 of the grooves 601 at three or more points. In this way, the susceptor ring is positioned on the dispersion plate with the machining accuracy of the grooves 601 and the protrusions 602.

[0057] As a result, in this modification as well, the protrusion 602 and the oblique side 603 of the groove 601 are in contact with each other at three or more points, so that the position of the susceptor ring does not shift in the diameter direction. In this case, in this modification as well, side effects can be suppressed as in the embodiment. Therefore, in this modification as well, the susceptor ring can be reliably fixed in position on the dispersion plate without causing side effects, and thus a substrate processing apparatus that enables stable etching processing can be provided.

[0058] The invention made by the inventor has been specifically described above based on the embodiment thereof. However, it goes without saying that the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. [Explanation of symbols]

[0059] 1 Ring groove 10 grooves 100 Substrate processing apparatus 101 Vacuum container 102 Discharge section 103 Sample stage 104 Processing Room 105 IR lamp unit 106 Ion Shield Plate 107 Quartz chamber 108 ICP coil 201 Sample stage base material 202 Sample Adsorption Film 203 Electrode plate 205 Susceptor Ring 206 Stage gas introduction mechanism 207 Stage internal piping 208 Dispersion plate 209 Micro gap 301 Top surface 302 Protrusion 401 Bottom surface 402 Groove 402a Side 1 402b Side 2 402c hypotenuse 501 Groove 502 protrusion 503 Hypotenuse 601 Groove 602 Protrusion 603 Hypotenuse 1011 Plasma 1013 Process gas 1014 Tabletop 1017 Vacuum Pump 1019 Wafer 1020 IR Lamp 1021 Reflector 1022 Light-transmitting window SL Slit

Claims

1. a vessel having a processing chamber; a sample stage base disposed inside the processing chamber and on which a substrate can be placed; a step portion provided on an outer periphery side of the sample stage base material; an internal pipe provided within the sample stage base material and reaching a lower surface of the step portion; a dispersion plate disposed on the lower surface of the step portion and having a groove for diffusing the gas supplied from the internal pipe toward a cylindrical step side surface of the step portion; a susceptor ring disposed on the dispersion plate; a ring-shaped gap provided between the susceptor ring and the step side surface, and allowing the gas diffused to the step side surface to flow upward; a plurality of protrusions provided on one of an upper surface of the dispersion plate and a lower surface of the susceptor ring; a plurality of recesses provided on the other of the upper surface of the dispersion plate or the lower surface of the susceptor ring; having the protrusion is inserted into the recess so that a side surface of the protrusion comes into contact with an inner side surface of the recess, thereby positioning the susceptor ring on the dispersion plate.

2. 2. The substrate processing apparatus according to claim 1, The planar shape of the dispersion plate is a ring shape, The planar shape of the susceptor ring is a ring shape, The planar shape of the recess is triangular, The triangular shape is a first side extending in a radial direction of the ring shape; A second side perpendicular to the first side; a hypotenuse intersecting each of the first side and the second side; having The inner side surface of the recess includes the oblique side.

3. 3. The substrate processing apparatus according to claim 1, The groove is A ring-shaped first groove; a plurality of slits arranged at intervals in a circumferential direction on an inner peripheral side of the first groove and provided so as to communicate with the first groove and the gap; The substrate processing apparatus includes:

4. 3. The substrate processing apparatus according to claim 1, The substrate processing apparatus, wherein the gap is provided so as to overlap with the substrate in a plan view.

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