Improved isolator for processing chambers

Abstract

Apparatus and methods are provided herein for reducing the deposition and accumulation of undesired residual materials on one or more surfaces in a processing chamber. In an embodiment disclosed herein, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing space, a showerhead disposed in the chamber lid and having a bottom surface adjacent to the processing space, and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end in contact with the showerhead, a second end opposite the first end, a sloped inner wall connected to the first end and extending radially outward from the first end toward the second end, and a lower inner wall at an angle different from the sloped inner wall. The first end of the isolator and the sloped inner wall form a first angle less than 90°.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE

[0002] The embodiments described herein relate generally to the field of semiconductor device manufacturing, and more particularly to an isolator for a chemical vapor deposition (CVD) chamber with improved flow. [Background technology]

[0002] Deposition processes, such as chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) processes, are commonly used in the manufacture of semiconductor devices to deposit a layer of material on a substrate surface by reacting one or more gaseous precursors, or activated species thereof, with or on the substrate surface. Gaseous precursors typically include either or both gas phase and vapor phase precursors.

[0003] Unfortunately, gaseous precursors and their reaction by-products also undesirably deposit materials, here residual materials, on the surfaces of walls and other components located within the processing space of the processing chamber. Typically, each time a substrate is processed, the thickness of the residual material deposit increases. The thick residual material deposit eventually flakes off the processing chamber surfaces, resulting in undesirable particulate contamination within the processing space and adversely affecting the quality of the material layer deposited on the substrate. Therefore, CVD and PECVD processing chambers must be periodically cleaned to remove residual materials. Chamber cleaning typically involves regular cleaning cycles between substrate processing operations and / or opening the chamber for cleaning and regular maintenance, both of which result in reduced substrate throughput and increased chamber downtime (time unavailable for substrate processing), resulting in lost production capacity of the processing chamber.

[0004] Therefore, there is a need in the art for an apparatus and method for preventing the undesired deposition of unreacted precursors and their reaction by-products on surfaces within the processing space of a processing chamber. Summary of the Invention

[0005] Embodiments disclosed herein relate generally to an isolator for a chemical vapor deposition (CVD) chamber that improves process gas flow, and more particularly, to an isolator that reduces low flow rates of process gas near a showerhead and reduces the buildup of undesirable residue materials on the showerhead.

[0006] In at least one embodiment, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing space, a showerhead disposed within the chamber lid and having a bottom surface adjacent to the processing space, and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end abutting the showerhead, a second end opposite the first end, and a sloped inner wall connected to the first end and extending radially outward from the first end toward the second end. The first end of the isolator and the sloped inner wall form a first angle less than 90°. The isolator includes a lower inner wall connected to the sloped inner wall and extending toward the second end at an angle different from the sloped inner wall.

[0007] In at least one embodiment, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid that defines a processing space. The processing chamber includes a showerhead disposed in the chamber lid and having a bottom surface adjacent to the processing space, a substrate support disposed in the processing space, and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end in contact with the showerhead, a second end opposite the first end, a sloped inner wall connected to the first end and extending radially outward from the first end to the second end, a conical inner wall connected to the second end and extending radially inward from the second end to the first end, and a flat inner wall connecting the sloped inner wall to the conical inner wall.

[0008] In at least one embodiment, an isolator for a processing chamber includes a ring-shaped body having a first end, a second end opposite the first end, a sloped inner wall connected to the first end and extending radially outward from the first end to the second end, a conical inner wall connected to the second end and extending radially inward from the second end to the first end, and a flat inner wall connecting the sloped inner wall to the conical inner wall.

[0009] In at least one embodiment, the processing chamber includes a chamber body having a chamber base, one or more sidewalls, a chamber lid defining a processing space, and a showerhead disposed within the chamber lid. The showerhead includes a bottom surface adjacent the processing space, a plurality of openings disposed through the bottom surface, and a flat, non-perforated region radially outwardly surrounding the plurality of openings. The processing chamber includes an isolator disposed between the chamber lid and the one or more sidewalls. A radial width of the flat region measured inside a radially inner edge of the isolator is less than about 7 / 16 inch (1.11 cm).

[0010] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the subject matter briefly summarized above can be had by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure, since the present disclosure admits of other equally effective embodiments. [Brief description of the drawings]

[0011] [Figure 1A] 1 is a schematic cross-sectional view of an exemplary processing chamber according to at least one embodiment. [Figure 1B] FIG. 1B is an enlarged view of a portion of FIG. 1A. [Diagram 2] 1B is an enlarged partial cross-sectional view of FIG. 1A showing another exemplary isolator installed in a processing chamber according to at least one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] For ease of understanding, wherever possible, identical reference numbers have been used to designate identical elements that are common to each of the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0013]

[0005] Embodiments disclosed herein provide an apparatus and associated methods for reducing the deposition and buildup of undesirable residual materials on one or more surfaces within a processing chamber, for example during chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) processing. The embodiments herein further provide increased productivity using the processing chamber.

[0014] During CVD and PECVD processing, process gas is removed from a portion of the processing space located between the substrate support and the showerhead (here, the first space) through exhaust channels arranged circumferentially in the chamber wall. The exhaust channels draw process gas from a central region of the first space above the center of the substrate radially outward. The process gas is then removed from the exhaust channels through circumferential or near-circumferential exhaust ports formed through the chamber wall and fluidly connected to a vacuum source, such as one or more dedicated vacuum pumps.

[0015] In conventional CVD and PECVD processes, deposition and accumulation of undesirable residual materials occurs in the flat, apertureless areas (i.e., areas without holes) formed on the non-active peripheral portion of the bottom surface of the showerhead, and becomes exposed in the processing space as processing gases flow from the first space to the exhaust channel.

[0016] At least a portion of the process gas flowing along the flat region of the showerhead exhibits undesirable low flow rates (e.g., zero flow rates) and / or recirculation near the flat region, resulting in undesirable deposition and buildup of residual material. The deposition and buildup of residue on the flat region increases the likelihood that flakes and other residual particles will fall off the flat region and land on the surface of the substrate, increasing the formation of defects on the processed substrate.

[0017] One way to prevent process gases from depositing on the flat areas is to increase the temperature in the process chamber, but in conventional process chambers the temperature is limited by other factors, such as the maximum allowable temperature of the sealing elements and the film properties required on the substrate.

[0018] Thus, in the embodiments disclosed herein, the isolator surrounding the flat area of ​​the showerhead has a design that improves the flow of process gases across the flat area and reduces the deposition and buildup of undesirable residual materials thereon. Thus, advantages of the embodiments herein include reduced deposition of residual materials on the showerhead, fewer required cleaning cycles, more time between scheduled maintenance, increased production capacity, improved yields, and reduced defect formation on processed substrates.

[0019] FIG. 1A is a schematic cross-sectional view of an exemplary processing chamber 100. The processing chamber 100 may be a CVD chamber, a PECVD chamber, an atomic layer deposition (ALD) chamber, or an etch chamber, among other types of vacuum chambers. The processing chamber 100 includes a chamber body 102 having one or more sidewalls 104, a chamber base 106, and a chamber lid assembly 108, which together define a processing space 103 and include a substrate support 120 disposed within the processing space 103. The processing space 103 includes a first space 109 and a second space 110. The first space 109 is defined by an inner surface of the sidewall 104, an inner surface of the chamber lid assembly 108, and a surface of the substrate support 120 that faces the chamber lid assembly, such as a first surface 120a, when the substrate support 120 is in a raised substrate processing position (as shown). The second space is defined by an inner surface of one or more sidewalls 104, a chamber base-facing surface of the substrate support 120, such as second surface 120b, when the substrate support is in a raised substrate processing position, and an inner surface of the chamber base 106. Typically, the first space 109 is less than about 10% of the processing space 103, such as less than about 5%.

[0020] The chamber lid assembly 108 is electrically insulated from the one or more side walls 104 by an annular isolator 162 disposed therebetween. The isolator 162 is formed from an electrically insulating material. For example, the isolator 162 may be formed from a ceramic material such as aluminum oxide (e.g., Al2O3). A showerhead 112 disposed within and coupled to the chamber lid assembly 108 has a plurality of openings 117 disposed therethrough to uniformly distribute one or more gaseous precursors from the precursor source 111 into the first space 109. The plurality of openings 117 may be circumferentially aligned to form one or more concentric annular rings. The showerhead 112 may include one or more of a face plate, a shield plate, and other intermittent diffuser plates.

[0021] Here, the showerhead 112 is formed of a conductive material, e.g., aluminum, and is connected to a first power source 142, such as an RF power source, that provides power to ignite and maintain a plasma of the gaseous precursor via capacitive coupling. At least one of DC power or pulsed DC power of positive or negative polarity, and pulsed RF power can also be coupled to the showerhead 112.

[0022] The bottom surface 114 of the showerhead 112 is adjacent to the processing space 103. In one example, the showerhead 112 includes a faceplate, and the bottom surface 114 of the showerhead 112 corresponds to a lower surface of the faceplate that faces the processing space 103. The bottom surface 114 of the showerhead 112 has a flat region 118 that radially outwardly surrounds a plurality of openings 117. The flat region 118 is not perforated. The flat region 118 is formed on a non-active peripheral portion of the bottom surface 114 of the showerhead 112 that is devoid of openings and is exposed within the processing space 103. For example, an inner diameter of the flat region 118 can be defined radially outward of an outermost opening of the plurality of openings 117 (e.g., outside an outermost ring of the one or more concentric rings). An outer diameter of the flat region 118 can be defined radially inward of the isolator 162 (e.g., inside a radially inner end 172 of the isolator 162 as shown in FIG. 1B). Flat region 118 is described in more detail below with reference to FIGS. 1B and 2.

[0023] The substrate support 120 includes a first surface 120a facing the chamber lid assembly 108 to receive the substrate 101, a second surface 120b facing the chamber base 106 opposite the first surface 120a, and a circumferential third surface 120c connecting the first surface 120a and the second surface 120b, as shown in FIG. 1B and FIG. 2. The third surface 120c faces one or more sidewalls 104 and is orthogonal to the first and second surfaces 120a, 120b. The first surface 120a has a first plane and the second surface 120b has a second plane that is substantially parallel to the first plane. As used herein, the term "substantially parallel" at least means that the first plane and the second plane do not intersect within the processing space 103 of the processing chamber 100.

[0024] Typically, during a process of forming a thin film thereon, the substrate 101 is secured to the first surface 120a of the substrate support 120 by an electrostatic chucking (ESC) force. The chucking force is a function of the potential between a voltage supplied to a chuck electrode 124 embedded in a dielectric material of the substrate support 120 and the substrate 101 disposed thereon. Typically, the chuck electrode 124 is coupled to a second power source 148, such as a DC power source. The substrate support 120 may include one or more heaters (not shown), such as one or more resistive heating elements embedded therein. The substrate support 120 may include one or more cooling channels (not shown) disposed therein, which are fluidly coupled to and in fluid communication with a coolant source (not shown) via one or more coolant lines (not shown). Typically, the coolant source is a refrigerant source or water source having a relatively high electrical resistance. In one example, the substrate support 120 includes both one or more heaters and one or more cooling channels to enable fine adjustment of the temperature of the substrate support 120 and the substrate 101 disposed thereon.

[0025] The substrate support 120 is coupled to a support shaft 121, which in turn is coupled to a lift actuator 115 that raises and lowers the support shaft 121 to facilitate processing of the substrate 101 and transfer of the substrate 101 to and from the processing chamber 100. A bellows 107 surrounding the support shaft 121 is coupled to the chamber base 106 and the lift actuator 115 to provide a flexible seal therebetween to maintain the vacuum integrity of the processing space 103. The lift actuator 115 is configured to move the substrate support 120 between a lowered position (not shown) to facilitate transfer of the substrate 101 to and from the processing space 103, and an elevated position as shown for processing of the substrate 101.

[0026] The substrate 101 is loaded into and removed from the processing space 103 through an opening 154 in one of the side walls 104. The opening 154 is typically sealed by a door or valve (not shown) during substrate processing. The processing chamber 100 also typically includes a conventional lift pin system (not shown) that is used to lift the substrate 101 from the substrate support 120 when the substrate support 120 is in a lowered position (not shown) that allows access to the substrate 101 by a robotic handler (not shown).

[0027] A purge gas can be delivered to the second space 110 during substrate processing or chamber cleaning operations. The purge gas flows into the second space 110 through one or more openings 119 disposed at one or more locations around or radially outward from the support shaft 121 through the chamber base 106. The one or more openings 119 have a symmetrical cross-sectional shape, such as a circular cross-sectional shape. In another example, the one or more openings 119 have an asymmetrical cross-sectional shape. The purge gas is provided by a purge gas source 113 in fluid communication with the one or more openings 119. The purge gas may include one or both of an inert gas, such as N2, Ar, Ne, Kr, or a combination thereof, and an oxygen-containing gas, such as O2, N2O, CO2, or a combination thereof.

[0028] The exhaust liner assembly 130 disposed within the processing space 103 is configured to promote uniform removal of processing gas from the first space 109 and reduce deposition of undesired residual materials on the inner walls of the chamber body 102 and the surfaces of the chamber components disposed within the second space 110 by preventing purge gas from flowing from the second space 110 into the first space 109. The exhaust liner assembly 130 includes a circumferential liner 150 having a cross-sectional C-channel shape (hereinafter referred to as C-shaped liner 150), a circumferential isolator 162, and a circumferential top liner 140 that defines flow paths for processing gas and purge gas during substrate processing, as described in more detail below. The processing chamber 100 may include a circumferential bottom liner 165 disposed between the top liner 140 and the chamber base 106 and lining at least a portion of the surface of one or more sidewalls 104 facing the processing space 103.

[0029] Here, the isolator 162 and respective liners 140, 150, and 165 are made from a ceramic material such as aluminum oxide or other material that is suitably resistant to heat and corrosion from halogen-containing cleaning plasmas, such as NF3-based plasmas. The isolator 162 and liners 140 and 150 may be periodically removed from the processing chamber 100 for scheduled cleaning or replacement.

[0030] Here, the C-channel liner 150 is disposed within a circumferential channel located below and radially outward from the substrate support 120. The circumferential channel is defined by an isolator 162, one or more sidewalls 104, and a top plate 105 secured to the one or more sidewalls 104. The top plate 105 is disposed adjacent to and radially outward from the isolator 162. The circumferential channel and the C-channel liner 150 disposed therein are located below a second plane of the substrate support 120 when the substrate support 120 is in a raised substrate processing position (as shown).

[0031] 1B is an enlarged view of a portion of FIG. 1A. A portion of the isolator 162 extends along an inner surface of the chamber lid assembly 108 at a location between the C-channel liner 150 and the chamber lid assembly 108, radially inward of one or more sidewalls 104, and terminates radially outward from but proximate to the substrate support 120 when the substrate support 120 is in a raised substrate processing position. The top liner 140 is disposed radially inward of the C-channel liner 150. The top liner 140 and a surface of the C-channel liner 150 define an exhaust channel 152 that is in fluid communication with a vacuum source, such as one or more dedicated vacuum pumps, through an exhaust port 172 formed through the C-channel liner 150 and through one of the one or more sidewalls 104.

[0032] The isolator 162 is a ring-shaped body having a first end 164 that abuts the bottom surface 114 of the showerhead 112. A second end 166 of the isolator 162, opposite the first end 164, is disposed on the C-channel liner 150. A sloped inner wall 168 of the isolator 162 is connected to the first end 164 and extends radially outward from the first end 164 to the second end 166. The first end 164 of the isolator 162 and the sloped inner wall 168 form an angle 170. The angle 170 is less than 90°, such as about 60° or less, such as about 45° or less, such as about 0° to about 90°, such as about 30° to about 45°, such as about 35°, such as about 40°, to improve the flow of process gas across the flat region 118 and reduce the deposition of undesired residual materials on the flat region 118. For example, when the angle 170 is less than 90 degrees, the occurrence of low flow rates and recirculation of process gas in the flat region 118 is reduced.

[0033] The shape 169 of the processing space 103 defined by the bottom surface 114 of the showerhead 112 and the sloped inner wall 168 of the isolator 162 forms an angle 171. It will be appreciated that in the illustrated embodiment, the angle 171 is dependent on the angle 170 of the isolator 162. The angle 171 is greater than 90°, such as about 135° or greater, such as about 90° to about 180°, such as about 135° to about 150°, such as about 140°, such as about 145°, to improve the flow of processing gas across the flat region 118 and reduce the deposition of undesired residual material on the flat region 118 as discussed above. For example, the angle 170 and the shape 169 of the processing space 103 can ensure a laminar flow of processing gas along the flat region 118.

[0034] The angled inner wall 168 is connected to the first end 164 at a radially inner end 172 of the isolator 162. An inner diameter D1 of the isolator 162 measured inside the radially inner edge 172 is about 13+3 / 8 inches (33.973 cm) to about 13+1 / 2 inches (33.524 cm), such as about 13+7 / 16 inches (34.13 cm). A radial width W1 of the flat region 118 measured inside the radially inner edge 172 of the isolator 162 and outside an outermost opening of the plurality of openings 117 (e.g., outside an outermost ring of the one or more concentric rings) is about 7 / 16 inches (1.11 cm) to about ½ inches (1.27 cm), such as about 0.46 inches (1.168 cm). The ratio of the flat area 118 to the remaining area of ​​the bottom surface 114 of the showerhead 112 within the flat area 118 is from about 12% to about 15%, for example about 14.5%.

[0035] The conical inner wall 174 of the isolator 162 is connected to the second end 166 and extends radially inward from the second end 166 toward the first end 164. The lower inner wall 176 of the isolator 162 connects the angled inner wall 168 to the conical inner wall 174. The lower inner wall 176 extends toward the second end 166 at a different angle than the angled inner wall 168. The lower inner wall 176 may be substantially flat relative to the angled inner wall 168 (e.g., having a substantially vertical orientation as opposed to the non-vertical orientation of the angled inner wall 168). The angled inner wall 168 and the lower inner wall 176 of the isolator 162 form an angle 178. The angle 178 is less than 270°, such as about 240° or less, such as about 225° to about 240°, such as about 230°, such as about 235°. A shape 177 of the process space 103 defined by the angled inner wall 168 and the lower inner wall 176 of the isolator 162 forms an angle 179. In the illustrated embodiment, it will be appreciated that the angle 179 depends on the angle 178 of the isolator 162. The angle 179 is greater than 90°, such as about 120° or more, such as about 90° to about 180°, such as about 120° to about 135°, such as about 125°, such as about 130°. The radius of curvature of the shape 177 may be about 0.3 inches (0.762 cm) or less, such as about 0.05 inches (0.127 cm) to about 0.2 inches (0.508 cm), such as about 0.1 inches (0.254 cm).

[0036] The top liner 140 is disposed between a first end 164 of the isolator 162 and the chamber base 106. The top liner 140 is disposed radially inward of the one or more sidewalls 104 and the C-channel liner 150. The top liner 140 includes at least an inner wall 144, a sloped outer wall 145, a first end 146 connecting the inner wall 144 to the sloped outer wall 145, and a second end 147 (shown in FIG. 1A) opposite the first end 146. The top liner 140 may include a conical inner wall 149 (shown in FIG. 1A) connecting the second end 147 to the inner wall 144. The conical inner wall 149 extends radially outward from the inner wall 144 toward the second end 147. When disposed in the processing chamber 100, the inner wall 144 is substantially parallel around its periphery to the third surface 120c of the substrate support 120. The second end 147 may rest on a surface of the lower liner 165 when the upper liner 140 is disposed in the processing chamber 100.

[0037] A first plane of the angled inner wall 168 of the isolator 162 and a second plane of the angled outer wall 145 of the upper liner 140 form an angle 143 therebetween. The angle 143 is about 30° or less, e.g., about 10° or less. In one example, the first plane and the second plane are substantially parallel (e.g., within + / - 10 degrees, e.g., within + / - 5 degrees, e.g., within + / - 3 degrees, e.g., within + / - 1 degree). One advantage of the isolator 162 is that the angle 143 provides an unrestricted flow of process gas between the angled inner wall 168 of the isolator 162 and the angled outer wall 145 of the upper liner 140.

[0038] The third surface 120c of the substrate support 120 (in a raised position), the upper liner 140, and the isolator 162 define a compound gas exhaust space 122 having a first inlet 123 and a second inlet 125. The first inlet 123 is located between the sloped inner wall 168 of the isolator 162 and the third surface 120c of the substrate support 120. The second inlet 125 is located between the inner wall 144 of the upper liner 140 and the third surface 120c of the substrate support 120.

[0039] The opening of the first inlet 123 to the mixed gas exhaust space 122 is located on the first plane of the first surface 120a so as not to restrict the flow of the process gas along the flat area 118. The minimum distance, e.g., distance 173, between the inclined inner wall 168 and the third surface 120c of the substrate support 120 (corresponding to the first inlet 123) is greater than about 0.2 inches (0.508 cm), e.g., about 0.25 inches (0.635 cm) to about 0.4 inches (1.016 cm), about 3 / 8 inches (0.953 cm), etc. One advantage of the isolator 162 is that the flow area of ​​the first inlet 123 is increased compared to conventional devices that have a minimum distance typically less than 0.2 inches (0.508 cm) that restricts the flow of the process gas. The embodiments of the isolator disclosed herein with increased flow area through the first inlet 123 reduce the deposition of undesirable residual material on the flat region 118, thereby reducing the formation of defects on substrates processed in the processing chamber 100.

[0040] The opening of the second inlet 125 to the mixed gas exhaust space 122 is located on a second plane of the second surface 120b so as to draw the purge gas into the mixed gas exhaust space 122 and prevent the process gas from entering the second space 110. The outlet 126 from the combined gas exhaust space 122 to the exhaust channel 152 is defined by the peripheral wall of the inner end of the arm of the C-channel liner 150 and the surface facing the sidewall of the upper liner 140.

[0041] During substrate processing, the process gas from the first space 109 flows radially outward from the area above the substrate 101 and directly into the mixed gas exhaust space 122, as opposed to conventional devices where the process gas is forced to flow through a restricted area around the third surface 120c of the substrate support 120. At the same time, the purge gas in the second space 110 is drawn into the mixed gas exhaust space 122 through the second inlet 125. Both the process gas and the purge gas are then drawn from the mixed gas exhaust space 122 through the outlet 126 into the exhaust channel 152, where the gas is exhausted from the processing chamber 100 through the exhaust port 172. The sloped outer wall 145 of the upper liner 140 facing the mixed gas exhaust space 122 directs the process gas flowing through the first inlet 123 away from the second inlet 125, preventing the process gas from undesirably entering the second space 110.

[0042] 2 is an enlarged partial cross-sectional view of FIG. 1A showing another exemplary isolator 262 installed in the processing chamber 100. The isolator 262 has a different shape compared to the isolator 162. In particular, the surface of the isolator 262 disposed adjacent to the processing space 103 has a different profile that can further improve the flow of processing gas in the flat area 218 and reduce the deposition of residual materials thereon. Compared to the isolator 162, the first end 264 of the isolator 262 is radially wider compared to the first end 164, and the inner diameter D2 of the radial inner edge 272 is smaller than the inner diameter D1. The inner diameter D2 of the isolator 262 measured inside the radial inner edge 272 is less than about 13+3 / 8 inches (33.973 cm), such as about 13 inches (33.02 cm) to about 13+1 / 4 inches (33.655 cm), such as about 13+1 / 8 inches (33.338 cm). As a result, the radial width W2 of the flat region 218 is less than the radial width W1 of the flat region 118. The radial width W2 of the flat region 218 measured inside the radial inner edge 272 of the isolator 262 and outside the outermost opening of the plurality of openings 117 (e.g., outside the outermost ring of the one or more concentric rings) is less than about 7 / 16 inches (1.11 cm), such as from about 1 / 4 inches (0.635 cm) to about 7 / 16 inches (1.11 cm), such as from about 1 / 4 inches (0.635 cm) to about 5 / 16 inches (0.794 cm), such as about 5 / 16 inches (0.794 cm). The isolator 262 covers more of the flat region 218 than conventional devices, providing less area for deposition and accumulation of undesirable residual material, resulting in reduced defect formation on substrates processed in the processing chamber 100.

[0043] 2, the radially inner edge 272 of the isolator 262 is substantially aligned with the inner wall 144 of the upper liner 140. In another example (not shown), the radially inner edge 272 of the isolator 262 is disposed radially inward of the inner wall 144 of the upper liner 140. The ratio of the flat area 218 to the remaining area of ​​the bottom surface 114 of the showerhead 112 within the flat area 218 is less than about 10%, such as from about 8% to about 10%, such as from about 9% to about 10%, such as about 9.5%.

[0044] 2, the first end 264 of the isolator 262 and the angled inner wall 268 form an angle 270 that is less than angle 170. As a result, the shape 269 of the processing space 103 defined by the bottom surface 114 of the showerhead 112 and the angled inner wall 268 of the isolator 262 forms a wider angle 271, further improving the flow of processing gas across the flat region 218.

[0045] In comparison to isolator 162, angled inner wall 268 and lower inner wall 276 of isolator 262 form angle 278 that is greater than angle 178. Also, a shape 277 of processing space 103 defined by angled inner wall 268 and lower inner wall 276 of isolator 262 forms angle 279 that is less than angle 179. A radius of curvature of shape 277 is greater than corresponding shape 177. For example, the radius of curvature of shape 277 may be about 0.3 inches (0.762 cm) or greater, such as about 0.4 inches (1.016 cm) to about 0.6 inches (1.524 cm), such as about 0.5 inches (1.27 cm).

[0046] A method for processing a substrate may include flowing one or more gaseous precursors into a first space, forming a plasma of the one or more gaseous precursors, exposing a substrate to the plasma, and depositing a material layer on the substrate. The method may include simultaneously exhausting (with the deposition of the material layer) a process gas including one or both of unreacted gaseous precursors or reaction by-products of the gaseous precursors and a purge gas from the process space through a compound gas exhaust space disposed at least partially between a first plane of the first surface and a second plane of the second surface.

[0047] The plasma can be formed by capacitive coupling with one or more gaseous precursors, and the power supplied to a showerhead or showerhead faceplate disposed within the chamber lid is between about 100 W and about 3000 W. In another example, the process chamber includes an inductive plasma generator, and the plasma is formed through inductive coupling with one or more gaseous precursors.

[0048] The one or more gaseous precursors may include silicon-containing precursors such as silane, dimethylsilane, trimethylsilane, tetramethylsilane, diethylsilane, tetramethylorthosilicate (TMOS), tetraethylorthosilicate (TEOS), octamethyltetrasiloxane (OMTS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TOMCATS), or mixtures thereof. The one or more gaseous precursors may include a mixture of a silicon-containing precursor with one or both of an oxygen-containing precursor, such as oxygen (O2), ozone (O3), NO, NO2, or mixtures thereof, and a hydroxyl-containing precursor, such as H2O, hydrogen peroxide, or mixtures thereof. The one or more gaseous precursors may be mixed with a carrier gas, such as He, N2, Ar, or combinations thereof, before flowing into the processing space.

[0049] In one example, the deposited material layer includes silicon oxide (e.g., SiO2), the gaseous precursor includes TEOS, and the purge gas introduced into the second space through one or more openings in the chamber base includes O2. Typically, the flow rate of the TEOS precursor is between about 5 grams per minute (gm / min) and about 30 g / min, such as between about 5 g / min and about 25 g / min. The process space is typically maintained at a pressure between about 10 mTorr and about 20 Torr, such as between about 1 Torr and about 10 Torr. The substrate is maintained at a temperature between about 350°C and about 550°C, such as between about 400°C and about 500°C, such as about 425°C. The temperature of the faceplate is maintained between about 100°C and about 300°C. The Ar carrier gas flow rate is between about 1 slm and about 20 slm, such as between about 5 slm and about 15 slm. The flow rate of the O2 purge gas is between about 1 slm and about 20 slm, such as between about 1 slm and about 10 slm, such as about 5 slm. The spacing between the first surface of the substrate support and the showerhead is between about 150 mils and about 300 mils, such as between about 200 mils and about 250 mils. The above values ​​are for a processing chamber sized to process 300 mm substrates. Appropriate scaling can be used for processing chambers sized for other substrates.

[0050] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which scope is determined by the appended claims.

Claims

1. A chamber body having a chamber base, one or more sidewalls, and a chamber lid that define a processing space; a showerhead disposed within the chamber lid and having a bottom surface adjacent the processing space; an isolator disposed between the chamber lid and the one or more side walls; The isolator comprises: a first end in contact with the showerhead; a second end opposite and parallel to the first end; an angled inner wall connected to the first end and extending radially outward from the first end toward the second end, the first end of the isolator and the angled inner wall forming a first angle that is less than 90 degrees; a lower inner wall connected to the inclined inner wall and extending toward the second end at a different angle than the inclined inner wall. Processing chamber.

2. The processing chamber of claim 1 , wherein the first angle is from about 30° to about 45°.

3. 10. The processing chamber of claim 1, wherein the bottom surface of the showerhead and the sloped inner wall of the isolator form a second angle greater than 90 degrees.

4. The processing chamber of claim 1 , wherein the second angle is from about 135° to about 150°.

5. The processing chamber of claim 1 , wherein the angled inner wall is connected to the first end at an inner radial edge of the isolator.

6. 6. The processing chamber of claim 5, wherein a radial width of the flat, non-perforated region of the showerhead measured inside the inner radial edge of the isolator is less than about 7 / 16 inch.

7. 6. The processing chamber of claim 5, wherein the isolator has an inner diameter measured inside the inner radial edge of less than about 13+3 / 8 inches.

8. a liner disposed between the first end of the isolator and the chamber base and radially inward of the one or more sidewalls, the liner comprising: The inner wall and A sloping exterior wall; a first end connecting the inner wall to the angled outer wall; a second end opposite the first end; and Including, the radially inner edge of the isolator being substantially aligned with or disposed radially inward of the inner wall of the liner; 6. The processing chamber of claim 5.

9. The substrate support further comprises: A first surface; and a second surface opposite the first surface; and a third surface connecting the first surface and the second surface around a periphery of the substrate support; Including, a minimum distance between the inclined inner wall and the third surface of the substrate support is greater than about 0.2 inches; 10. The processing chamber of claim 1.

10. a liner disposed between the first end of the isolator and the chamber base and radially inward of the one or more sidewalls, the liner comprising: The inner wall and A sloping exterior wall; a first end connecting the inner wall to the angled outer wall; a second end opposite the first end; and Including, a first plane of the angled inner wall of the isolator and a second plane of the angled outer wall of the liner form a third angle of less than about 30°.

10. The processing chamber of claim 1.

11. The processing chamber of claim 10 , wherein the third angle is less than or equal to about 10°.

12. The processing chamber of claim 10 , wherein the first plane and the second plane are substantially parallel.

13. 1. An isolator for a process chamber, comprising: A ring-shaped body, the ring-shaped body comprising: A first end; a second end opposite and parallel to the first end; an inclined inner wall connected to the first end and extending radially outward from the first end toward the second end; an inner conical wall connected to the second end and extending radially inward from the second end toward the first end; a flat inner wall connecting the angled inner wall to the conical inner wall; An isolator having

14. 14. The isolator of claim 13, wherein the first end of the isolator and the angled inner wall form a first angle that is less than 90 degrees.

15. 15. The isolator of claim 14, wherein the first angle is from about 30 degrees to about 45 degrees.

16. 14. The isolator of claim 13, wherein the angled inner wall and the flat inner wall of the isolator form a second angle that is less than 270 degrees.

17. 17. The isolator of claim 16, wherein the second angle is from about 225 degrees to about 240 degrees.

18. A process chamber comprising: a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a process space; a showerhead disposed within the chamber lid, a bottom surface adjacent to the processing space; a plurality of openings disposed through the bottom surface; a flat, non-perforated region radially outwardly surrounding the plurality of openings; A shower head including: an isolator disposed between the chamber lid and the one or more side walls, the isolator including a first end abutting the chamber lid and a second end opposite and parallel to the first end, the radial width of a flat area measured inside a radially inner edge of the isolator being less than about 7 / 16 inch; A processing chamber comprising:

19. 20. The processing chamber of claim 18, wherein a ratio of the flat area to the remaining area of ​​the bottom surface of the showerhead within the flat area is less than about 10%.

20. 20. The processing chamber of claim 18, wherein the plurality of openings are circumferentially aligned into one or more concentric rings, and a radial width of the flat region is measured outside an outermost ring of the one or more concentric rings.

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