Monitoring equipment capable of measuring large areas

Abstract

A monitoring device capable of large-area measurement that can easily diagnose device performance in semiconductor or display processes is provided. [Solution] Alternatively, the monitoring device includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic element arranged on the substrate, wherein the electronic element has at least one sensor, and the monitoring device diagnoses an object to be diagnosed located outside the monitoring device by measuring at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element using the sensor, and an intaglio or embossed structure is formed on the substrate, and the intaglio structure is filled with a material having properties different from those of the substrate, or the embossed structure is formed of a material having properties different from those of the substrate.

Description

[Technical field]

[0001] The present invention relates to a monitoring device capable of large area measurement, and more particularly, to a monitoring device capable of large area measurement that can easily diagnose device performance in a semiconductor process or a display process. [Background technology]

[0002] Semiconductors and displays are being developed in line with the trend toward larger diameters. Maintaining process uniformity within semiconductor devices during semiconductor and display manufacturing is a key factor in reducing defects. Although the semiconductor devices and display devices must ensure the same level of process uniformity for each process, their performance may change over time due to the innumerable cycles of temperature rise and fall, RF power on / off, and pressure rise and fall. Changes in the process of the semiconductor device or display device can cause defects in the wafer or glass substrate, but there is currently no technology that can accurately monitor such changes in process conditions. Summary of the Invention [Problem to be solved by the invention]

[0003] An object of the present invention is to provide a monitoring instrument capable of large-area measurement that can easily diagnose device performance in semiconductor or display processes. [Means for solving the problem]

[0004] In order to achieve the above object, the monitoring device of the present invention includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic element arranged on the substrate, wherein the electronic element has at least one sensor, the monitoring device measures at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object and another element of an object to be diagnosed located outside the monitoring device using the sensor to diagnose the object to be diagnosed, and an intaglio or relief structure is formed on the substrate, and the intaglio structure is filled with a material having properties different from those of the substrate, or the relief structure is formed of a material having properties different from those of the substrate.

[0005] The monitoring device of the present invention includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic element arranged on the substrate, wherein the electronic element has at least one sensor, the monitoring device measures at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the diagnostic object and another element of a diagnostic object located outside the monitoring device using the sensor to diagnose the diagnostic object, and an intaglio or embossed structure is formed on the protective layer, and the intaglio structure is filled with a material having properties different from those of the protective layer, or the embossed structure is formed of a material having properties different from those of the protective layer.

[0006] The monitoring device of the present invention includes a protective layer, a substrate arranged in a space inside the protective layer, at least one electronic element arranged on the substrate, and a member arranged outside the protective layer to provide doubly protection for the electronic element together with the protective layer, wherein the electronic element has at least one sensor, and the monitoring device uses the sensor to measure at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the diagnostic object and another element of a diagnostic object located outside the monitoring device to diagnose the diagnostic object. Effect of the Invention

[0007] The monitoring device according to the present invention can improve the flatness of the monitoring device by forming a recessed or embossed structure on a printed circuit board or a protective layer, so that a temperature sensor arranged on the printed circuit board can be closely attached to an object to be diagnosed, the horizontality of a vibration sensor and a displacement sensor arranged on the printed circuit board can be compensated for to improve measurement accuracy, the axial direction of an RF sensor arranged on the printed circuit board can be prevented from being misaligned with an object to be diagnosed, the light amount receiving sensitivity of an optical sensor arranged on the printed circuit board can be improved, and the transmitting and receiving sensitivity of a wireless communication device arranged on the printed circuit board can be improved. Furthermore, it is possible to prevent the monitoring equipment from being misaligned from the axis of a robot device that automatically transports the monitoring equipment, thereby preventing damage to the monitoring equipment or the semiconductor device. [Brief description of the drawings]

[0008] [Figure 1] 1 is a diagram illustrating a monitoring device installed in a chamber of the present invention. [Diagram 2] 1 is a diagram illustrating a monitoring device arranged on an electrostatic chuck of the present invention. [Diagram 3] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 4] 1 is a diagram illustrating a monitoring device of the present invention. [Diagram 5] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 6] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 7] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 8] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 9] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 10] 1 is a diagram illustrating problems that may occur in the structure of a large-area measurement system. [Figure 11]1 is a diagram illustrating a recessed or embossed structure for reducing tensile and compressive stresses. [Figure 12] 1 is a diagram illustrating tensile or compressive stress that can occur in a large area measuring device. [Figure 13] 13 is a diagram illustrating an example of an error caused by stress during transportation of a robot; [Figure 14] 1 is a diagram illustrating the degradation of measurement accuracy due to tensile stress. [Figure 15] 1 is a diagram illustrating the degradation of measurement accuracy due to tensile stress. [Figure 16] 1 is a diagram illustrating the degradation of measurement accuracy due to tensile stress. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] As used herein, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprise" or "include" should not be interpreted as including all of the components or steps described in the specification, and should be interpreted as including some components or steps not included, or including additional components or steps. In addition, terms such as "... unit" and "module" described in the specification mean a unit that processes at least one function or operation, which may be embodied in hardware or software, or a combination of hardware and software.

[0010] The present invention relates to a monitoring device for effectively diagnosing a large-area object to be diagnosed, and is capable of determining an abnormal state of an electrostatic chuck used in, for example, a semiconductor process or a display process. For example, the monitoring instrument may measure the temperature, electrostatic force, or degree of tilt of the electrostatic chuck. As another example, the monitoring device may measure a vibration state within the semiconductor or display device or a distance between a showerhead and an electrostatic chuck, for example, the monitoring device may measure a vibration state of a wafer when the wafer is transferred using a cassette. As yet another example, the monitoring device may measure the voltage, current, or power applied within the semiconductor or display chamber, or may measure the amount of light in the plasma within the semiconductor or display chamber. Such monitoring devices have a structure for effectively measuring a large area, specifically, recessed or embossed structures can be arranged to compensate for tensile and compressive stresses or thermal stresses, and microprocessors, wireless communication devices, wireless charging devices, sensors, etc. can be arranged on a printed circuit board, so that electronic elements such as wireless communication devices can be effectively protected and contamination of the devices can be minimized.

[0011] The present invention will now be described in detail with reference to the drawings. FIG. 1 is a diagram showing a monitoring device installed in a chamber of the present invention, and FIG. 2 is a diagram showing a monitoring device arranged on an electrostatic chuck of the present invention. FIG. 3 is a diagram showing a monitoring device of the present invention, and FIGS. 4 to 9 are diagrams showing the monitoring device of the present invention. FIG. 10 is a diagram showing problems that may occur in the structure of a large area measurement system, FIG. 11 is a diagram showing a recessed or embossed body structure for reducing tensile stress and compressive stress, and FIG. 12 is a diagram showing tensile stress or compressive stress that may occur in a large area measurement device. FIG. 13 is a diagram showing an example of an error caused by stress during robot transportation, and FIGS. 14 to 16 are diagrams showing a decrease in measurement accuracy due to tensile stress.

[0012] As shown in FIG. 1, an electrostatic chuck 112 is formed at the lower end of a chamber 110 in which a plasma process is performed, and a monitoring device 100 is arranged on the upper surface of the electrostatic chuck 112. The monitoring device 100 determines whether or not there is an abnormality in the electrostatic chuck 112 before a semiconductor process or a display process is started, and if it is determined that there is no abnormality in the electrostatic chuck 112, the monitoring device 100 can be removed and an actual process can be performed. For example, after the monitoring device 100 is removed, a wafer for a deposition process, an etching process, an implant process, or a photo process can be placed on the electrostatic chuck 112. The monitoring device 100 can measure the distance between the electrostatic chuck 112 and the showerhead 113 . The monitoring device 100 may measure the RF voltage, current, or power within the chamber 110 . Additionally, the monitoring device 100 can measure vibration conditions within the chamber and can optically measure properties of the plasma within the chamber.

[0013] Hereinafter, problems and solutions when measuring a large area of ​​a diagnostic object using such a monitoring device 100 will be discussed in detail. As shown in Fig. 12, depending on the material properties of the monitoring device, the substrate of the monitoring device may bend due to the effects of compressive stress 401 and tensile stress 402. Such a substrate bending phenomenon may cause the sensor 214 of the monitoring device to deviate from a desired alignment direction, as shown in Fig. 10, thereby reducing the measurement accuracy of the sensor 214, reducing the communication performance of the wireless communication device 211, and reducing the charging performance of the wireless charging device 212 for charging the power supply device 213. Also, as shown in FIG. 14, the sensor 214 may not be in close contact with the electrostatic chuck 112 due to the bending of the substrate, which may result in a decrease in the accuracy of temperature measurement. Furthermore, when measuring the distance between the electrostatic chuck 112 and the showerhead 113, the axis of the sensor 214 may be twisted, reducing the measurement accuracy. Furthermore, as shown in FIG. 15, the direction of emission of RF power and the direction of reception of the sensor 214 may be twisted, reducing the measurement accuracy of the RF voltage, current or power. In addition, as shown in FIG. 13, bending of the monitoring device may occur while the monitoring device is being transported using a robot 310, which may result in malfunction of the monitoring device or damage to the monitoring device.

[0014] In order to solve this problem, the monitoring device 100 may have a structure that can prevent bending of the substrate. Specifically, the monitoring device 100 of this embodiment may include a printed circuit board 205 and at least one microprocessor 210, a wireless communication device 211, a wireless charging device 212, a power supply device 213, and at least one sensor 214 arranged on the printed circuit board 205. That is, multiple electronic elements may be arranged on the printed circuit board 205. The printed circuit board 205 and the electronic elements may be arranged in a protective layer 201, and within the protective layer 201, the printed circuit board 205 and the electronic elements may be covered by an electromagnetic wave shielding layer 204. As a result, the electromagnetic wave shielding layer 204 may be formed on the upper or lower part of the printed circuit board 205 on which the electronic elements are arranged. The protective layer 201 can block contaminants emitted from the monitoring device 100 and prevent deterioration of the performance and quality of the monitoring device 100 due to external factors such as heat and moisture, and can mechanically strengthen the rigidity to prevent impacts and scratches. In addition, the protective layer 201 can adjust the flatness and roughness of the surface through mechanical processing or chemical polishing according to the measurement environment to ensure the measurement accuracy of the monitoring device 100. The monitoring device 100 may be provided with a structure for preventing bending or improving flatness.

[0015] 3, the engraved structure 202 is formed on the printed circuit board 205, and the engraved structure 202 is filled with a material that exhibits an opposite stress, and then the stress is compensated for to improve the flatness of the board. For example, since the tensile strength of the printed circuit board 205 decreases as the temperature increases, the flatness of the printed circuit board 205 can be improved by filling the engraved structure 202 with a material that can improve the tensile strength. Materials such as metal materials, such as copper, aluminum, silver, and gold, silicon, silicon carbide, and oxides, that have a higher thermal conductivity than the printed circuit board 205 can be filled into the engraved structure 202 to improve tensile strength.

[0016] As shown in FIG. 4, a relief structure 203 made of a material having a different heat transfer coefficient is formed on a printed circuit board 205 to improve the tensile strength and flatness of the board. 5, the flatness can be improved by forming an intaglio structure 206 on the protective layer 201 and filling the intaglio structure 206 with a material having stress characteristics opposite to those of the protective layer 201. For example, if the protective layer 201 is made of an oxide, the tensile strength is weak due to the characteristics of the oxide, so the stress can be compensated for by filling the intaglio structure 206 with a nitride that can improve the tensile strength. Also, as shown in FIG. 6, a relief structure 207 made of a material having a different heat transfer coefficient is formed on the protective layer 201 to improve the aspect ratio stress.

[0017] 7 and 8, a member 208 for protecting the electronic elements from an external environment may be disposed on at least a portion of the protective layer 201. As a result, the electronic elements inside the monitoring device 100 may be doubly protected from the external environment. For example, the monitoring device 100 may be protected from process gases and plasma flowing into a semiconductor device or a display device. For example, the temperature measurement accuracy can be improved by forming the member 208 from a material that has a similar thermal conductivity to silicon. As another example, when measurements are taken in a high temperature environment, the member 208 can be made of a material with low thermal conductivity to protect electronic elements that are sensitive to heat. Additionally, as shown in FIG. 9, pockets 209 may be arranged in member 208 to protect electronic components that are sensitive to certain environments. For example, when measurements are made in a high-temperature environment, the pocket 209 can be filled with a substance having low thermal conductivity to protect electronic elements that are sensitive to high temperatures. Also, a material having elastic properties can be arranged within the pocket 209 to protect electronic elements that are sensitive to vibration.

[0018] In order to prevent electromagnetic waves from penetrating into the electronic elements in the protective layer 201, an electromagnetic wave shielding layer 204 may surround the electronic elements. The electromagnetic wave shielding layer 204 may be located at least one on the top and bottom of the printed circuit board 205. The electromagnetic wave shielding layer 204 is formed of a sputtered metal material (nickel, silver, gold, etc.) or liquid metal or metal spray method, an electromagnetic wave shielding film, or a mesh-type electromagnetic wave shielding film that protects the internal electronic components from electromagnetic waves generated by plasma. Alternatively, a multi-layer printed circuit board may be used, with the entire area of ​​the top and bottom layers being made of a material used for wiring (eg, copper, silver, gold, etc.) and used as the electromagnetic wave shielding layer 204 . Furthermore, the electromagnetic wave shielding layer 204 may be made of a metal material such as copper, nickel, aluminum, gold, silver, etc., or a plurality of alloy materials, may be made of a spray coating made of the material, may be made of a film tape made of the material, may be made of a liquid metal made of the material, may be realized by a sputtering semiconductor process, may be made of a sheet paper made of the material, and the sheet paper may be made in a form that blocks the entire surface or in a mesh form.

[0019] A portion of the electromagnetic wave shielding layer 204 corresponding to the wireless communication device 211 may be opened to facilitate wireless communication. Also, a portion of the electromagnetic wave shielding layer 204 corresponding to the electrical sensor may be opened. The protective layer 201 and member 208, which may become the surface layer of the monitoring device, may be formed of a material that can be inserted into the chamber, such as a silicon-based material, an oxide-based material, a ceramic-based material, an engineering plastic, Teflon, etc. A microprocessor 210 may be formed on or under the printed circuit board 205 and may control the operation of the wireless communication device 211 , the wireless charging device 212 or at least one sensor 214 . The microprocessor 210 can collect data sensed by various sensors 214 and transfer the collected data to an external device (not shown) via a wireless communication device 211 . Furthermore, the microprocessor 210 can receive user settings set by a user via the wireless communication device 211 and control the internal electronic elements according to the received user settings.

[0020] The entire area of ​​the printed circuit board 205, excluding the wiring and the footprints of the elements, can be used as a ground plane, resulting in excellent noise removal. In addition, this ground plane can be used as the electromagnetic wave shielding layer 204. The wireless communication device 211 is a connection path for wirelessly communicating with the external device, and may be arranged on the printed circuit board 205. The wireless communication device 211 may transmit sensing data including temperature information, tilt information, vibration information, electrical information, etc. sensed by the sensor 214 to the external device. At this time, the external device may analyze the transmitted sensing data to determine whether or not an abnormality exists in the electrostatic chuck 112. The wireless charging device 212 can wirelessly charge the power supply device 213 built into the printed circuit board 205.

[0021] The sensor 214 is formed on the printed circuit board 205 and can measure the temperature, tilt, vibration, voltage and current generated by the plasma, the optical wavelength of the plasma, the distance between the upper electrode and the lower electrode of the semiconductor device, or the DC voltage and current of the electrostatic force of the electrostatic chuck 112. As the sensor 214, a temperature sensor can be used to measure the temperature, a gyroscope can be used to measure the tilt, and a vibration sensor can be used to measure the vibration. In addition, the sensor 214 can use a capacitor and an inductor to measure the voltage and current, an electrical sensor can be used for electrical measurement, an optical sensor can be used to measure the optical wavelength of the plasma, and a displacement sensor can be used to measure the distance between the electrodes.

[0022] In summary, the monitoring device 100 of the present invention is arranged on the electrostatic chuck 112 and can diagnose an abnormal state of the electrostatic chuck 112 by measuring the temperature, tilt, vibration, voltage or current, distance between electrodes, etc. of the electrostatic chuck 112. The monitoring device 100 can also diagnose an abnormal state of the RF voltage, current, power applied to the semiconductor or display chamber 100 and the plasma optical wavelength applied to the chamber. If it is determined that the electrostatic chuck 112 and the chamber 110 are in an abnormal state, appropriate measures can be taken to prevent major damage. In particular, since the electrostatic chuck 112 is a component that holds the wafer and is directly related to the process results, all wafers processed on it must be discarded if the designed parameters are not maintained. Since the chamber 110 is a space in which wafer processes are performed and is directly related to the process results, all wafers processed on it must be discarded if the designed parameters are not maintained. By diagnosing such problems in advance, major damage can be prevented. In addition, since the monitoring device 100 has improved flatness by controlling the tensile strength and compressive strength, a process diagnosis can be performed by inserting a robot into the chamber 110 and placing the monitoring device 100 on the electrostatic chuck 112 without opening the chamber 110. If the flatness of the monitoring device 100 is low, as shown in FIG 13, the monitoring device 100 may shift and not pass through the insertion opening when moved by the robot, which may cause a problem that the monitoring device 100 cannot be properly arranged on the electrostatic chuck 112. However, the flatness of the monitoring device 100 can be freely controlled depending on the measurement element, the measurement method, and the measurement environment.

[0023] Meanwhile, in the above description, the abnormal state of the electrostatic chuck and the semiconductor chamber or the display chamber has been determined, but the monitoring device 100 can also be used to diagnose the temperature, tilt or vibration of a baking chuck in a photo process, the temperature, tilt, voltage or vibration of a chuck performed in an implant device, the temperature of a high-temperature chuck performed in a deposition process, etc. The temperature of the high-temperature chuck can be measured from a long distance. The monitoring device 100 can also be used to measure the temperature, vibration, or tilt of a photomask used in an exposure process. In this case, the monitoring device 100 can have the same structure as described above. Additionally, the monitoring apparatus 100 may not be in physical contact with the electrostatic chuck 112. The monitoring apparatus 100 may be capable of non-contact monitoring of the temperature of the high temperature chuck on the lift pins of the chuck to diagnose the high temperature chuck during the deposition process. Furthermore, the monitoring device 100 can be used to diagnose an object to be diagnosed using an optical sensor that detects light or an electrical sensor that measures an electrical component. In this case, the monitoring device 100 having the above-described structure is used to mount the optical sensor, but a light receiving sensor for receiving light can be included, and a hole through which light can pass can be formed in the monitoring device 100.

[0024] In order to mount the electrical sensor, the electrical sensor may be built inside the monitoring device 100, and a hole through which an electrical component can pass may be formed in the monitoring device 100. That is, as long as the monitoring device 100 uses a wafer having pockets formed therein and various elements such as sensors are mounted in the pockets, it can be used in various steps of a semiconductor process or a display process. Furthermore, an adhesive layer may be formed to attach the printed circuit board 205 and the member 208. In this case, the protective layer 201 may also function as the adhesive layer. Also, an intaglio or embossed pattern may be formed to compensate for stress applied vertically and horizontally to the member 208. Here, the pattern may be formed of a material capable of compensating for the thermal expansion coefficient, such as thermosetting resin, engineering plastic, ceramic, silicon, or microwire.

[0025] Meanwhile, the components of the above-described embodiment can be easily understood from a process perspective. That is, each component can be understood in terms of its own process. Also, the process of the above-described embodiment can be easily understood from the perspective of the components of the device. The above-described embodiments of the present invention have been disclosed for illustrative purposes, and a person skilled in the art having ordinary knowledge of the present invention may make various modifications, changes, and additions within the spirit and scope of the present invention, and such modifications, changes, and additions should be considered to fall within the scope of the following claims. [Explanation of symbols]

[0026] 100 Monitoring Equipment 110 Chamber 112 Electrostatic Chuck 113 Shower Head 201 Protective layer 202 Intaglio structure 204 Electromagnetic shielding layer 205 Printed Circuit Board 206 Intaglio structure 208 Parts 209 Pocket 210 Microprocessor 211 Wireless communication devices 213 Power Supply 214 Sensors 310 Robot 401 Compressive Stress 402 Tensile Stress

Claims

1. In monitoring equipment, A protective layer; A substrate arranged in a space inside the protective layer; at least one electronic element arranged on the substrate; The electronic element has at least one sensor, and the monitoring device uses the sensor to measure at least one of a temperature, a tilt, a light, a vibration, a voltage, a current, a power, a pressure, and a distance between the object to be diagnosed and another element of an object to be diagnosed located outside the monitoring device, thereby diagnosing the object to be diagnosed; The monitoring device according to the present invention is characterized in that an intaglio or embossed structure is formed on the substrate, and the intaglio structure is filled with a material having different properties from the substrate, or the embossed structure is formed of a material having different properties from the substrate.

2. the substrate is a printed circuit board; The recessed structure is filled with a material capable of compensating for a tensile or compressive force of the substrate, or the recessed structure is formed of a material capable of compensating for a tensile or compressive force of the substrate, 2. The monitoring device of claim 1, wherein flatness of the substrate is improved by compensating for the tensile or compressive force.

3. 2. The monitoring device of claim 1, wherein the different property is a coefficient of thermal expansion.

4. the material filled in the recessed structure has a thermal expansion coefficient higher than that of the substrate, and is selected from the group consisting of thermosetting resin, engineering plastic, silicon, copper, aluminum, gold, and silver; 4. The monitoring device according to claim 3, wherein the material of the relief structure is a material having a thermal expansion coefficient higher than that of the substrate, and is selected from the group consisting of thermosetting resin, engineering plastic, silicon, copper, aluminum, gold and silver.

5. The electronic device further includes an electromagnetic wave shielding layer that surrounds the substrate and the electronic device and shields electromagnetic waves from the outside. The electronic element further includes a microprocessor, a wireless communication device, and a wireless charging device in addition to the sensor; The monitoring device of claim 1, wherein the microprocessor collects data measured by the sensor and transmits it to an external device via the wireless communication device, and the wireless charging device charges a battery within the board.

6. 2. The monitoring device of claim 1, wherein the protective layer is formed of silicon, oxide, ceramic, or carbon.

7. The protective layer further includes a member disposed outside the protective layer. The monitoring device according to claim 1 , wherein the member is formed of a material having temperature characteristics or thermal conductivity characteristics different from those of the protective layer, thereby improving the accuracy of temperature measurement or protecting electronic elements that are sensitive to heat.

8. The monitoring device according to claim 7, characterized in that a pocket is formed in the member, and the pocket is filled with a material having a thermal conductivity different from that of the member, or an elastic body is arranged inside the pocket.

9. 2. The monitoring device according to claim 1, wherein the object to be diagnosed is an electrostatic chuck, and the sensor measures a temperature, a tilt, a voltage, a current, or a degree of vibration of the electrostatic chuck.

10. The substrate is a printed circuit board, 2. The monitoring device of claim 1, wherein the area of ​​the substrate other than the traces and the footprints of the electronic elements is used as a ground plane.

11. A wireless communication element, a light receiving sensor, or an electrical sensor is arranged on the substrate; The monitoring device according to claim 1 , wherein a hole is formed in a portion of the protective layer corresponding to the wireless communication element, the light receiving sensor, or the electrical sensor.

12. In monitoring equipment, A protective layer; A substrate arranged in a space inside the protective layer; at least one electronic element arranged on the substrate; The electronic element has at least one sensor, and the monitoring device uses the sensor to measure at least one of a temperature, a tilt, a light, a vibration, a voltage, a current, a power, a pressure, and a distance between the object to be diagnosed and another element of an object to be diagnosed located outside the monitoring device, thereby diagnosing the object to be diagnosed; A monitoring device characterized in that an engraved structure or a relief structure is formed on the protective layer, and the engraved structure is filled with a material having different properties from the protective layer, or the relief structure is formed of a material having different properties from the protective layer.

13. The substrate is a printed circuit board, The recessed structure is filled with a material capable of compensating for the tensile or compressive force of the protective layer, or the recessed structure is formed of a material capable of compensating for the tensile or compressive force of the protective layer, 13. The monitoring device of claim 12, wherein the flatness of the protective layer is improved by compensating for the tensile or compressive force.

14. The monitoring device of claim 12, wherein the material filled in the recessed structure or forming the embossed structure is a material having opposite stress characteristics to that of the protective layer, and is a nitride, a carbon material, or silicon.

15. The protective layer further includes a member disposed outside the protective layer. The monitoring device according to claim 12, wherein the member is formed of a material having temperature characteristics or thermal conductivity characteristics different from those of the protective layer, thereby improving the accuracy of temperature measurement or protecting electronic elements that are sensitive to heat.

16. In monitoring equipment, A protective layer; A substrate arranged in a space inside the protective layer; At least one electronic element arranged on the substrate; a member arranged outside the protective layer to provide doubly protective protection for the electronic element together with the protective layer, The electronic element has at least one sensor, and the monitoring device uses the sensor to measure at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element of an object to be diagnosed located outside the monitoring device, thereby diagnosing the object to be diagnosed.

17. 17. The monitoring device of claim 16, wherein the member is formed with an intaglio or embossed pattern to compensate for longitudinal and lateral stresses.

18. 20. The monitoring device of claim 17, wherein the pattern is made of thermosetting resin, engineering plastic, ceramic, silicon, or microwire to compensate for the thermal expansion coefficient of the member.

19. A pocket is formed in the member; 17. The monitoring device according to claim 16, wherein the pocket is filled with a material having a thermal conductivity different from that of the member, or an elastic body is arranged inside the pocket.

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