Drive control system and drive control method for power converter for railway vehicle

Abstract

To perform optimal drive control for a power converter within a range that does not cause overtemperature or damage to a semiconductor element constituting the power converter and depending on actual utilization conditions, and to reduce consumption power of a railway vehicle.SOLUTION: A drive control system for a power converter, which supplies electric power to a motor mounted on a railway vehicle comprises an arithmetic unit which outputs a command for drive control of the power converter constituted from a plurality of semiconductor elements. The arithmetic unit calculates a current damage degree of a semiconductor element on the basis of a temperature history of the semiconductor element during actual utilization, and calculates future temperature history estimated value and a future damage degree estimated value of the semiconductor element on the basis of an operation history of the railway vehicle during the actual utilization, and further, selects control parameters on the basis of the future temperature history estimated value, the current damage degree and the future damage degree estimated value of the semiconductor element, and outputs a command on the basis of the control parameters.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a drive control system and a drive control method for a power converter that supplies power to a motor mounted on a railway vehicle. [Background technology]

[0002] Railway vehicles are generally equipped under the floor with a power conversion device that controls the power supplied to the traction motor. The power conversion device is equipped with a power converter composed of semiconductor elements that perform DC / AC power conversion by switching current. The semiconductor elements generate heat when current is applied and when switching. If the semiconductor elements become too hot due to this heat, there is a concern that the conversion efficiency will decrease and the elements will deteriorate, so it is necessary to cool and control the semiconductor elements to keep them within a specified temperature range.

[0003] On the other hand, in order to reduce the power consumption of railway vehicles, it is effective to increase the carrier frequency, which is one of the control parameters, to reduce the harmonic loss of the traction motor. However, increasing the carrier frequency increases the loss in the semiconductor elements that make up the power converter, which in turn increases the temperature of the semiconductor elements. Furthermore, the semiconductor elements are more likely to be damaged by thermal stress that occurs repeatedly due to the temperature cycle.

[0004] As examples of power conversion devices mounted on railway vehicles, Patent Documents 1 and 2 are given here. Patent Document 1 discloses a configuration including a power conversion unit that converts power from a power source and supplies the power to a load on an electric vehicle, a cooling unit that cools the power conversion unit, and a control unit that PWM controls the power conversion unit, and the control unit changes the carrier frequency of the PWM control, the number of carrier pulses, or the output power of the power conversion unit based on at least one or more parameters of the position of the electric vehicle, the temperature of the power conversion unit, the internal temperature of the electric vehicle control device, the outside air temperature, or the occupancy rate of the electric vehicle. This conventional technology is expected to have the effect of providing a small-sized, low-cost electric vehicle control device with appropriate cooling performance.

[0005] Patent Document 2 discloses the configuration of an electric vehicle control device that includes a power conversion circuit provided for each motor of an electric vehicle and having an inverter that converts supplied power into AC power that controls the motor, and a control unit that starts or stops each inverter based on the input current value of the power conversion circuit or the current value of the motor when the electric vehicle runs in a constant speed operation mode. This conventional technology is expected to have the effect of providing an electric vehicle control device that can more finely control a highly efficient operating state while the vehicle is running. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2016-140204 A [Patent Document 2] JP 2015-6063 A Summary of the Invention [Problem to be solved by the invention]

[0007] In general, control parameters of a power conversion device are set in the design stage so that the temperature of the semiconductor elements is equal to or lower than the allowable value and the life span is equal to or longer than the planned operation period under the worst conditions on a representative line. However, in actual operation, the operating history of the motor current, ambient temperature, occupancy rate, etc. of the railway vehicle may not be under the worst conditions, and the temperature and damage level of the semiconductor elements may be greater than the allowable values.

[0008] Under these conditions, an effective way to reduce the power consumption of railway vehicles is to increase the carrier frequency, which is one of the control parameters, to reduce the harmonic losses in the traction motor. However, since it is necessary to ensure that the temperature and damage level of semiconductor elements do not exceed their respective allowable values, it is necessary to predict the future temperature and damage level when the carrier frequency is changed.

[0009] Therefore, the present invention has been made in consideration of the above-mentioned problems, and aims to reduce the power consumption of railway vehicles in accordance with actual operating conditions, without causing overheating or damage to semiconductor elements. [Means for solving the problem]

[0010] In order to solve the above problems, one representative drive control system of the present invention for a power converter that supplies power to a motor installed in a railway vehicle includes a calculation device that outputs commands to control the drive of a power converter composed of a plurality of semiconductor elements, and the calculation device calculates the current level of damage to the semiconductor element based on the temperature history of the semiconductor element during actual operation, and also calculates a predicted value of the future temperature history of the semiconductor element and a predicted value of the future damage level of the semiconductor element based on the operating history of the railway vehicle during actual operation, and further selects control parameters based on the predicted value of the future temperature history of the semiconductor element, the current level of damage to the semiconductor element, and the predicted value of the future damage level of the semiconductor element, and outputs commands using the control parameters. Effect of the Invention

[0011] According to the present invention, it is possible to optimally drive and control a power converter in accordance with actual operating conditions, without causing overheating or damage to semiconductor elements constituting the power converter, and preferably to reduce power consumption of a railway vehicle in accordance with the actual operating conditions. Problems, configurations and effects other than those described above will become apparent from the description of the following embodiments. [Brief description of the drawings]

[0012] [Figure 1] 1 is a diagram showing an outline of an example of the configuration of a railway vehicle power conversion device according to a first embodiment of the present invention. [Diagram 2] 1 is a diagram showing a block configuration and a process flow of a drive control system for a railway vehicle power converter according to a first embodiment. [Diagram 3] FIG. 2 is a diagram showing a carrier pattern, which is one of the control parameters of the power converter in the first to third embodiments. [Figure 4] FIG. 11 is a diagram showing the relationship between the carrier frequency and the power consumption, the semiconductor element temperature, and the degree of damage to the semiconductor element in the first to third embodiments. [Diagram 5] FIG. 11 is a diagram showing the relationship between the carrier frequency and the power consumption, the semiconductor element temperature, and the degree of damage to the semiconductor element in the first to third embodiments. [Figure 6] FIG. 11 is a diagram showing a block configuration and a process flow of a drive control system for a railway vehicle power converter according to a second embodiment. [Figure 7] FIG. 11 is a diagram showing a block configuration and a process flow of a drive control system for a railway vehicle power converter according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, with reference to the drawings, a description will be given of examples 1 to 3 as modes for carrying out the present invention. Note that the present invention is not limited to these examples. In addition, in the description of the drawings, the same parts are denoted by the same reference numerals. EXAMPLES

[0014] Fig. 1 is a diagram showing an overview of an example of the configuration of a drive control system for a railway vehicle power converter according to a first embodiment of the present invention. Note that components of the railway system that are not related to the present invention are omitted in Fig. 1.

[0015] Under the floor of the railway vehicle 1, a power converter 2, a bogie 3, a motor 4, a transmission device 5, and a vehicle information device 6 are installed. In addition, a calculation device 11 is installed in a location separate from the railway vehicle 1 (for example, in a ground facility).

[0016] The power converter 2 supplies AC power 7 to a motor 4 mounted on a trolley 3 to drive the motor 4. The power converter 2 also transmits a semiconductor element temperature history 8 (T1) during actual operation to a transmission device 5. Here, the power converter 2 is composed of a plurality of semiconductor elements, for example, a bridge circuit. Since the plurality of semiconductor elements may be used as a semiconductor element module, the "semiconductor element" in the above "semiconductor element temperature history" and the later-described "semiconductor element damage level" and "semiconductor element power consumption" also includes semiconductor element modules.

[0017] The vehicle information device 6 transmits an actual operation history 9 to the transmission device 5. The transmission device 5 transmits to the calculation device 11 a semiconductor element temperature history 8 during actual operation and an operation history 9 during actual operation.

[0018] The arithmetic device 11 transmits an optimum carrier pattern change command 10 to the transmission device 5 , and the transmission device 5 transmits this optimum carrier pattern change command 10 to the power converter 2 . In addition, the calculation device 11 may be configured to be installed under the floor of the railway vehicle 1, in which case it receives the semiconductor element temperature history 8 during actual operation and the operation history 9 during actual operation directly from the power converter 2 and the vehicle information device 6, respectively, via wires, without going through the transmission device 5.

[0019] Furthermore, the semiconductor element temperature history 8 during actual operation may be transmitted to the transmission device 5 via the vehicle information device 6, and the driving history 9 during actual operation may be transmitted to the transmission device 5 via the power converter 2, and the transmission route is not limited. Also, the power converter 2, the vehicle information device 6, and the transmission device 5 may be integrated into one device.

[0020] 2 is a diagram showing a block configuration and a processing flow of the drive control system for the railway vehicle power converter according to the embodiment 1. For the arithmetic device 11 enclosed by a dashed line in the figure, an outline of the processing mode is shown in the form of a flowchart of functional blocks.

[0021] The arithmetic device 11 receives, via the transmission device 5, the semiconductor element temperature history 8 (T1) during actual operation from the power converter 2 and the operation history 9 during actual operation from the vehicle information device 6. Then, the calculation device 11 calculates the current semiconductor element damage level 12 (D1) based on the semiconductor element temperature history 8 (T1) during actual operation. Here, the semiconductor element damage level refers to the degree of element degradation caused by stress due to heat (temperature rise).

[0022] Furthermore, the calculation device 11 calculates, based on the actual operation history 9, a semiconductor element temperature history 14 (T2), a semiconductor element damage degree 15 (D2), a semiconductor element power consumption 16 (Ps), and a motor power consumption 17 (Pm) as future predicted values, assuming a case where this operation history 9 is repeated during the scheduled operation period of the railway vehicle 1. Hereinafter, the semiconductor element temperature history 14 (T2), the semiconductor element damage degree 15 (D2), the semiconductor element power consumption 16 (Ps), and the motor power consumption 17 (Pm), which are future predicted values, are abbreviated as the future semiconductor element temperature history 14 (T2), the future semiconductor element damage degree 15 (D2), the future semiconductor element power consumption 16 (Ps), and the future motor power consumption 17 (Pm), respectively.

[0023] The period (cycle) of processing execution in the arithmetic device 11 is assumed to be a processing cycle in which processing is executed at a certain time interval, for example, once a month, once every three months, or once every six months.

[0024] From these calculation results, carrier pattern judgment 18 is performed. In this judgment, thresholds are set for the temperature and damage level of the semiconductor element so as not to cause element destruction within the planned operation period. The conditions for carrier pattern judgment 18 are that the future semiconductor element temperature history 14 (T2) is "T2≦temperature threshold" for the judgment of the temperature of the semiconductor element, and that the sum (D1+D2) of the current semiconductor element damage level 12 (D1) and the future semiconductor element damage level 15 (D2) is "D1+D2≦damage level threshold" for the judgment of the damage level of the semiconductor element, and further, the sum (Ps+Pm) of the future semiconductor element power consumption 16 (Ps) and the future motor power consumption 17 (Pm) is the minimum ("Ps+Pm: minimum").

[0025] Here, in order to confirm that "Ps+Pm: minimum", the above judgment is repeated with different control parameters. In this embodiment 1, it is assumed that the carrier pattern is changed as the control parameter, and a future predicted value is repeatedly calculated with the changed carrier pattern 13.

[0026] If the changed carrier pattern 13 satisfies the above three judgment conditions (Yes), the calculation device 11 outputs an optimal carrier pattern change command 10 as the optimal control parameter and transmits it to the transmission device 5. If it does not satisfy the conditions (No), the carrier pattern is changed.

[0027] An optimum carrier pattern change command 10 is transmitted from the transmission device 5 to the power converter 2, and the power converter 2 outputs AC power 7 to the motor 4 using this optimum carrier pattern.

[0028] Here, the semiconductor element temperature history 8 (T1) during actual operation may use output values ​​from temperature sensors installed in the multiple semiconductor elements that make up the power converter 2, or may use values ​​obtained by performing a predetermined calculation on output values ​​from temperature sensors installed in other components such as a cooler (not shown) to which those semiconductor elements are attached.

[0029] Furthermore, the actual operation history 9 is a time history of the railcar 1, such as the position of the railcar, the running speed of the railcar, the notch of the railcar, the outside temperature of the railcar, the occupancy rate of the railcar, the current of the motor mounted on the railcar, and the carrier frequency of the power converter mounted on the railcar. For example, the outside temperature of the railcar may be detected using a temperature detection means installed on the railcar 1, or observation data from a weather station. The occupancy rate of the railcar may be obtained from another management system. Furthermore, the frequency of outputting the optimum carrier pattern change command 10 is not limited.

[0030] 3 is a diagram showing a carrier pattern, which is one of the control parameters of the power converter 2 in the first to third embodiments. In contrast to the current carrier pattern 19 (solid line), the changed carrier pattern 13 (dashed line) changes the carrier frequency in the asynchronous PWM region 20, and changes the modulation factor that changes the number of pulses in the synchronous PWM region 21. This changes the carrier pattern. However, the carrier pattern is changed within a range that does not cause induction interference or motor control failure.

[0031] 4 and 5 are diagrams showing the relationship between the power consumption, the semiconductor element temperature, and the semiconductor element damage level, and the carrier frequency, respectively, in Examples 1 to 3. In Fig. 4 and Fig. 5, the upper graph shows the power consumption, the middle graph shows the semiconductor element temperature, and the lower graph shows the damage level.

[0032] Here, the power consumption is the sum (Ps+Pm) of the future semiconductor element power consumption 16 (Ps) and the future motor power consumption 17 (Pm) (hereinafter referred to as "future power consumption (Ps+Pm)"). As the carrier frequency increases, the number of switching times of the semiconductor elements increases, and losses, i.e., future semiconductor element power consumption 16 (Ps), increase. On the other hand, as the carrier frequency of the motor 4 increases, harmonic losses decrease, and so future motor power consumption 17 (Pm) decreases. In other words, the sum of the two, the future power consumption (Ps+Pm), is minimal for the carrier frequency.

[0033] On the other hand, the maximum value (max) of the future semiconductor element temperature history 14 (T2) and the sum (D1+D2) of the present and future semiconductor element damage degrees 12 and 15 increase with an increase in the loss of the semiconductor element as the carrier frequency increases. As described above, threshold values ​​(hereinafter referred to as the "temperature threshold" and the "damage threshold") are set for the temperature and damage degree of the semiconductor element so as not to cause element destruction within the planned operation period.

[0034] In FIG. 4, carrier frequency A at which future power consumption (Ps+Pm) is at a minimum is a frequency that is lower than both the carrier frequency at which the maximum value (max) of future semiconductor element temperature history 14 (T2) coincides with the temperature threshold value, and the carrier frequency at which the sum (D1+D2) of current and future semiconductor element damage levels 12 and 15 coincides with the damage level threshold value. In this case, carrier frequency A at which future power consumption (Ps+Pm) is minimized becomes the optimal value for reducing future power consumption (Ps+Pm), and is output as optimal carrier pattern change command 10.

[0035] On the other hand, in Fig. 5, as shown in the lower graph, the tendency of the semiconductor element damage level to the carrier frequency is steep. In this case, the carrier frequency at which the future power consumption (Ps+Pm) is at a minimum is a frequency higher than carrier frequency B at which the sum (D1+D2) of the present and future semiconductor element damage levels 12 and 15 coincides with the damage level threshold. 5, at the carrier frequency where the future power consumption (Ps+Pm) is at a minimum, the future semiconductor element damage level will be greater than the damage level threshold. Therefore, carrier frequency B where the sum (D1+D2) of the present and future semiconductor element damage levels 12 and 15 matches the damage level threshold becomes the optimal value for reducing the future power consumption (Ps+Pm), and is output as optimal carrier pattern change command 10.

[0036] Finally, the effects of the first embodiment will be described. According to the first embodiment, the semiconductor element temperature, the semiconductor element damage level, and the power consumption can be calculated as future predicted values, and an optimal value for reducing the power consumption within a threshold value that does not cause element failure can be calculated. This makes it possible to reduce the power consumption of the railway vehicle according to the actual operating conditions within a range that does not cause the semiconductor element to overheat or be damaged. For example, even if the train runs under conditions that were not anticipated at the time of design, the power consumption can be minimized within a range that does not cause failure during the operating period by optimizing the control parameters each time. EXAMPLES

[0037] 6 is a diagram showing a block configuration and a process flow of a drive control system for a railway vehicle power converter according to Example 2. In Example 2, when a calculation device 11 calculates a future predicted value, a railway vehicle operation condition change scenario 22 is additionally input.

[0038] Here, the operation condition change scenario 22 is, for example, at least one of the following for railroad vehicles: change in operation time, fluctuation in occupancy rate, change in route, change in driver, presence or absence of automatic operation, and weather change. These changes in operation conditions are also reflected to calculate future predicted values.

[0039] The method according to the second embodiment makes it possible to reduce the power consumption of railway vehicles in accordance with actual operating conditions, in response to anticipated future changes in operating conditions, without causing overheating or damage to semiconductor elements. EXAMPLES

[0040] 7 is a diagram showing a block configuration and a process flow of a drive control system for a railway vehicle power converter according to Example 3. Example 3 also takes into consideration how to deal with the case where an appropriate solution is not obtained in carrier pattern decision 18.

[0041] For example, if the operating conditions during actual operation are more severe than those assumed at the time of design, and no carrier pattern can be found in which the sum of the current and future semiconductor element damage levels 12 and 15 (D1+D2) is less than the damage level threshold, a semiconductor element replacement command 23 is output to the maintenance management system 24 to prompt replacement of the semiconductor element.

[0042] In the third embodiment, the number of times that the carrier pattern determination 18 is performed in one processing loop in the arithmetic device 11 is limited to a predetermined number N, thereby performing the output determination 25 of the semiconductor element replacement command 23. However, the method of the output determination is not limited to this.

[0043] According to the method of the third embodiment, it is possible to replace a semiconductor element before the semiconductor element is damaged during operation, and it is possible to prevent unexpected failures.

[0044] According to the above-mentioned first to third embodiments, the present invention includes at least the following aspects. <Aspect 1> A drive control system for a power converter that supplies power to a motor mounted on a railway vehicle, the system including a calculation device that outputs commands to drive and control a power converter composed of a plurality of semiconductor elements, the calculation device calculates a current level of damage to the semiconductor element based on the temperature history of the semiconductor element during actual operation, calculates a predicted value of the future temperature history of the semiconductor element and a predicted value of the future damage level of the semiconductor element based on the operating history of the railway vehicle during actual operation, selects control parameters based on the predicted value of the future temperature history of the semiconductor element, the current level of damage to the semiconductor element, and the predicted value of the future damage level of the semiconductor element, and outputs commands using the control parameters.

[0045] <Aspect 2> In the drive control system described in aspect 1 above, the calculation device calculates a predicted future power consumption value of the semiconductor element and a predicted future power consumption value of the motor based on the operating history of the railway vehicle in actual operation, and selects control parameters based on the predicted future power consumption value of the semiconductor element and the predicted future power consumption value of the motor under conditions where the predicted future temperature history value of the semiconductor element is below a predetermined temperature threshold and the damage level of the semiconductor element based on the current damage level of the semiconductor element and the predicted future damage level value of the semiconductor element is below a predetermined damage level threshold.

[0046] <Aspect 3> In the drive control system described in the above-mentioned aspect 1 or aspect 2, the arithmetic device is provided as a ground-side facility or on board the railway vehicle, and when provided as a ground-side facility, a transmission device is provided for sending and receiving data between the arithmetic device and the power converter.

[0047] <Aspect 4> In the drive control system according to any one of the above aspects 1 to 3, the control parameter is a carrier pattern for driving the power converter.

[0048] <Aspect 5> In a drive control system according to any one of the above aspects 1 to 4, the operation history of a railway vehicle in actual operation is a time history of at least a predetermined number of each of the time histories of the position, running speed, notch, outside temperature, occupancy rate, motor current, and carrier frequency of the power converter for the railway vehicle.

[0049] <Aspect 6> A drive control system as described in any one of the above aspects 1 to 5, which calculates future temperature history prediction values, damage prediction values, and power consumption prediction values ​​of semiconductor elements, as well as future power consumption prediction values ​​of the motor, using an operating condition change scenario when the operating conditions of a railway vehicle are changed based on the operating history of the railway vehicle in actual operation.

[0050] <Aspect 7> In the drive control system described in aspect 6 above, the operation condition change scenario is, with respect to railway vehicles, at least one of the following: change in operation time, fluctuation in occupancy rate, change in route, change in driver and presence or absence of automated driving, and weather change.

[0051] <Aspect 8> In the drive control system according to any one of the above-mentioned aspects 1 to 7, the arithmetic device generates a command to replace the semiconductor element when the control parameter cannot be selected.

[0052] <Aspect 9> A method for driving and controlling a power converter that supplies power to a motor mounted on a railway vehicle, comprising the steps of: obtaining a temperature history of the semiconductor elements during actual operation of a power converter composed of a plurality of semiconductor elements; calculating a current level of damage to the semiconductor elements based on the temperature history; obtaining an operating history of the railway vehicle during actual operation; calculating a predicted future temperature history value of the semiconductor elements and a predicted future damage level value of the semiconductor elements based on the operating history; selecting control parameters based on the predicted future temperature history value of the semiconductor elements, the current level of damage to the semiconductor elements, and the predicted future damage level value of the semiconductor elements; and outputting a command to drive and control the power converter using the control parameters.

[0053] <Aspect 10> A drive control method as described in aspect 9 above, in which a predicted future power consumption value of a semiconductor element and a predicted future power consumption value of a motor are calculated based on the operating history of a railway vehicle in actual operation, and control parameters are selected based on the predicted future power consumption value of the semiconductor element and the predicted future power consumption value of the motor, under conditions where the predicted future temperature history value of the semiconductor element is below a predetermined temperature threshold value and the damage level of the semiconductor element based on the current damage level of the semiconductor element and the predicted future damage level of the semiconductor element is below a predetermined damage level threshold value.

[0054] <Aspect 11> In the drive control method according to the ninth or tenth aspect, the control parameter is a carrier pattern for driving the power converter.

[0055] <Aspect 12> A drive control method according to any one of the above aspects 9 to 11, in which a future temperature history prediction value, damage prediction value and power consumption prediction value of a semiconductor element, as well as a future power consumption prediction value of a motor, are calculated using an operating condition change scenario in which the operating conditions of a railway vehicle are changed based on the operating history of the railway vehicle in actual operation.

[0056] <Aspect 13> In the drive control method according to any one of the above-mentioned aspects 9 to 12, when the control parameter cannot be selected, a command to replace the semiconductor element is generated.

[0057] Although the first to third embodiments have been described above as modes for carrying out the present invention, the present invention is not limited to the above-described first to third embodiments, and various modifications are possible without departing from the gist of the present invention. [Explanation of symbols]

[0058] 1: Railway vehicle, 2: Power converter, 3: Bogie, 4: Motor, 5: Transmission device, 6: Vehicle information device, 7: AC power, 8: Semiconductor element temperature history during actual operation (T1), 9: Operation history during actual operation, 10: Optimal carrier pattern change command, 11: Calculation unit, 12: Current semiconductor element damage level (D1), 13: Changed carrier pattern, 14: Future semiconductor element temperature history (T2), 15: Future semiconductor element damage degree (D2), 16: Future power consumption of semiconductor elements (Ps), 17: Future power consumption of motors (Pm), 18: Carrier pattern determination, 19: Current carrier pattern, 20: Asynchronous PWM area, 21: Synchronous PWM area, 22: Operation condition change scenario, 23: Semiconductor element replacement command, 24: Maintenance management system, 25: Output judgment of semiconductor element replacement command

Claims

1. A drive control system for a power converter that supplies power to a motor mounted on a railway vehicle, comprising: a computing device that outputs a command to drive and control the power converter that is configured with a plurality of semiconductor elements; The computing device includes: A current damage level of the semiconductor element is calculated based on a temperature history of the semiconductor element during actual operation, and a future temperature history prediction value of the semiconductor element and a future damage level prediction value of the semiconductor element are calculated based on an operation history of the railway vehicle during actual operation, and further A control parameter is selected based on a predicted value of a future temperature history of the semiconductor element, a current damage level of the semiconductor element, and a predicted value of a future damage level of the semiconductor element, and the control parameter is used to output the command. A drive control system comprising:

2. 2. The drive control system according to claim 1, The computing device includes: calculating a predicted future power consumption value of the semiconductor element and a predicted future power consumption value of the motor based on an operational history of the railway vehicle in actual operation; The control parameters are selected based on a predicted value of future power consumption of the semiconductor element and a predicted value of future power consumption of the motor under the condition that a predicted value of the future temperature history of the semiconductor element is equal to or less than a predetermined temperature threshold value, and a damage level of the semiconductor element based on a current damage level of the semiconductor element and a predicted value of the future damage level of the semiconductor element is equal to or less than a predetermined damage level threshold value. A drive control system comprising:

3. 3. A drive control system according to claim 1, further comprising: The arithmetic device is provided as a wayside facility or on the train of the railway vehicle, and when the arithmetic device is provided as the wayside facility, a transmission device is provided for transmitting and receiving data between the arithmetic device and the power converter. A drive control system comprising:

4. 3. A drive control system according to claim 1, further comprising: The control parameter is a carrier pattern for driving the power converter. A drive control system comprising:

5. 3. A drive control system according to claim 1, further comprising: The operation history of the railcar in actual operation is a predetermined number or more of time histories of the position, running speed, notch, outside temperature, occupancy rate, current of the motor, and carrier frequency of the power converter for the railcar. A drive control system comprising:

6. 3. A drive control system according to claim 1, further comprising: Using an operation condition change scenario in which the operation conditions of the railway vehicle are changed with respect to the operation history of the railway vehicle in actual operation, a future temperature history prediction value, a damage prediction value, and a power consumption prediction value of the semiconductor element, as well as a future power consumption prediction value of the motor are calculated. A drive control system comprising:

7. 7. The drive control system according to claim 6, The operation condition change scenario is at least one of a change in operation time, a change in occupancy rate, a change in a route, a change in a driver, whether or not the train is automated, and a change in weather, with respect to the train. A drive control system comprising:

8. 3. A drive control system according to claim 1, further comprising: When the control parameter cannot be selected, the computing device generates a replacement command for the semiconductor device. A drive control system comprising:

9. A method for controlling a power converter that supplies power to a motor mounted on a railway vehicle, comprising: For the power converter configured with a plurality of semiconductor elements, acquiring a temperature history of the semiconductor element during actual operation, and calculating a current damage level of the semiconductor element based on the temperature history; acquiring an operational history of the railway vehicle in actual operation, and calculating a future temperature history prediction value of the semiconductor element and a future damage prediction value of the semiconductor element based on the operational history; selecting a control parameter based on a predicted future temperature history value of the semiconductor device, a current damage level of the semiconductor device, and a predicted future damage level of the semiconductor device; A command for controlling the power converter is output using the control parameters. A drive control method comprising:

10. The drive control method according to claim 9, calculating a predicted future power consumption value of the semiconductor element and a predicted future power consumption value of the motor based on the operation history; The control parameters are selected based on a predicted value of future power consumption of the semiconductor element and a predicted value of future power consumption of the motor under the condition that a predicted value of a future temperature history of the semiconductor element is equal to or less than a predetermined temperature threshold value, and a damage degree of the semiconductor element based on a current damage degree of the semiconductor element and a predicted value of a future damage degree of the semiconductor element is equal to or less than a predetermined damage degree threshold value. A drive control method comprising:

11. The drive control method according to claim 9 or 10, further comprising the steps of: The control parameter is a carrier pattern for driving the power converter. A drive control method comprising:

12. The drive control method according to claim 9 or 10, further comprising the steps of: Using an operation condition change scenario in which the operation conditions of the railway vehicle are changed with respect to the operation history of the railway vehicle in actual operation, a future temperature history prediction value, a damage prediction value, and a power consumption prediction value of the semiconductor element, as well as a future power consumption prediction value of the motor are calculated. A drive control method comprising:

13. The drive control method according to claim 9 or 10, further comprising the steps of: If the control parameter cannot be selected, a command to replace the semiconductor device is generated. A drive control method comprising:

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