Atomic beam generator

Abstract

To provide an improved atomic beam generator.SOLUTION: An atomic beam generator 10 includes a cathode 12 provided on the inner surface of an atomic beam generation chamber 14 for generating an atomic beam, an anode 11 provided inside the atomic beam generation chamber 14, a gas inlet section 15 for introducing a gas into the atomic beam generation chamber 14, a power supply 20 for applying a high voltage between the anode 11 and the cathode 12 to generate an atomic beam of gas, a magnetic field generating portion 17 for generating a magnetic field in a direction perpendicular to the major axis direction of anode 11, and an irradiation port 16 provided in the cathode 12 for irradiating the generated atomic beam.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to an atom beam generating device that generates an atomic beam. [Background technology]

[0002] A technique for bonding wafers is to remove contaminants and oxide films from the wafer surface by irradiating it with a fast atom beam (FAB) and then perform surface activation to bond the wafers at room temperature. In an atomic beam generator, plasma is generated when a dilute gas is introduced and a voltage is applied between the cathode and anode to form a discharge space. Gas ions generated within the plasma are accelerated by an electric field. Among these, gas ions moving toward an irradiation port provided in a part of the housing receive electrons from the wall of the irradiation port, become neutral, and are emitted from the irradiation port as an atomic beam.

[0003] As such an atomic beam generator, for example, Patent Document 1 discloses an atomic beam generator having a cathode, which is a housing having an emission surface with an irradiation port capable of emitting atomic beams, an anode disposed inside the cathode and generating plasma between the anode and the cathode, and a first magnetic field generating unit that generates a first magnetic field and a second magnetic field generating unit that generates a second magnetic field, the first magnetic field and the second magnetic field generating unit generating a first magnetic field and a second magnetic field within the cathode parallel to the emission surface such that when viewed from the emission surface side with the first magnetic field above the second magnetic field, the magnetic field directions are leftward for the first magnetic field and rightward for the second magnetic field, and the magnetic field generating unit directs cations generated within the cathode to the emission surface. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2019 / 207958 Summary of the Invention [Problem to be solved by the invention]

[0005] When the generated plasma collides with a cathode or the like and generates fine particles by sputtering, the fine particles can be irradiated onto the wafer along with the atomic beam, causing defects in the wafer bonding, which is particularly problematic when applied to three-dimensional integrated circuits.

[0006] The present disclosure has been made in view of the above problems, and has an object to provide an improved atomic beam generator. [Means for solving the problem]

[0007] In order to solve the above problems, an atomic beam generator according to one embodiment of the present disclosure includes a cathode provided on the inner surface of an atomic beam generation chamber for generating an atomic beam, an anode provided inside the atomic beam generation chamber, a gas inlet section for introducing a gas into the atomic beam generation chamber, a power source for applying a high voltage between the anode and the cathode to generate an atomic beam of gas, a magnetic field generating section for generating a magnetic field in a direction perpendicular to the long axis direction of the anode, and an irradiation port provided in the cathode for irradiating the generated atomic beam. Effect of the Invention

[0008] According to the present disclosure, an improved atom beam generator can be provided. [Brief description of the drawings]

[0009] [Figure 1] 1 is a diagram illustrating a schematic configuration of an atomic beam generating device according to an embodiment of the present disclosure. [Diagram 2] 1A and 1B are diagrams showing the potential distribution inside the atomic beam generation chamber when a magnetic field is not applied and when a magnetic field is applied. [Diagram 3] FIG. 1 is a diagram showing a model of an atomic beam generation chamber used in calculations. [Figure 4] FIG. 13 is a diagram showing the dimensions of a model of an atomic beam generation chamber used in calculations. [Diagram 5] FIG. 13 is a diagram showing calculation results of flux inside an atomic beam generation chamber. [Figure 6]2 is a diagram showing an example of a magnetic field generating unit of an atomic beam generating device according to an embodiment; [Figure 7] 2 is a diagram showing an example of a magnetic field generating unit of an atomic beam generating device according to an embodiment; [Figure 8] 2 is a diagram showing an example of a magnetic field generating unit of an atomic beam generating device according to an embodiment; [Figure 9] FIG. 13 is a diagram showing the results of an experiment using the atomic beam generator of the comparative example. [Figure 10] FIG. 13 is a diagram showing the results of an experiment using a uniform magnetic field type atomic beam generator. [Figure 11] FIG. 13 is a diagram showing the results of an experiment using an alternating magnetic field type atomic beam generator. [Figure 12] FIG. 13 is a diagram showing the inside of the atom beam generation chamber after irradiating with an atomic beam 200 times using the atom beam generation device of the comparative example. [Figure 13] FIG. 2 is a diagram showing the inside of the atom beam generation chamber after 400 irradiations of the atomic beam using a uniform magnetic field type atom beam generator. [Figure 14] FIG. 13 is a diagram showing another example of the magnetic field generating unit. [Figure 15] FIG. 13 is a diagram showing another example of the magnetic field generating unit. [Figure 16] 7 is a diagram showing the results of an analysis of the magnetic field generated by the magnetic field generating unit shown in FIG. 6. [Figure 17] 15 is a diagram showing the results of an analysis of the magnetic field generated by the magnetic field generating unit shown in FIG. 14. [Figure 18] 16 is a diagram showing the results of an analysis of the magnetic field generated by the magnetic field generating unit shown in FIG. 15. [Figure 19] FIG. 2 is a diagram showing the magnetic flux density of a magnetic field in an atomic beam generating device. [Figure 20] FIG. 13 is a diagram showing another example of the configuration of an atomic beam generating apparatus according to an embodiment. [Figure 21] FIG. 13 is a diagram showing another example of the configuration of an atomic beam generating apparatus according to an embodiment. [Figure 22] 22 is a diagram showing how a high-speed atomic beam is irradiated onto a wafer by the atomic beam generating apparatus shown in FIG. 21. [Figure 23]FIG. 22 is a diagram showing the results of an analysis of a magnetic field in the atomic beam generating apparatus shown in FIG. 21. [Figure 24] FIG. 22 is a diagram showing a potential distribution in the atomic beam generating apparatus shown in FIG. 21. [Diagram 25] FIG. 22 is a diagram showing a flux distribution in the atomic beam generating apparatus shown in FIG. 21. [Figure 26] 22 is a diagram showing the flux distribution of a fast atomic beam of Ar irradiated by the atomic beam generator shown in FIG. 21. [Figure 27] FIG. 13 is a diagram showing another example of the configuration of an atomic beam generating apparatus according to an embodiment. [Figure 28] FIG. 13 is a diagram showing another example of the configuration of an atomic beam generating apparatus according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Fig. 1 shows a schematic configuration of an atomic beam generator according to an embodiment of the present disclosure. The left side of Fig. 1 shows a schematic cross-sectional view from a front view, and the right side of Fig. 1 shows a schematic cross-sectional view from a side view. The atomic beam generator 10 includes an anode 11, a cathode 12, an atomic beam generation chamber 14, a power source 20, an insulator 13, a magnetic field generation unit 17, and a gas introduction unit 15.

[0011] The atom beam generation chamber 14 generates an atomic beam in the internal space. The atom beam generation chamber 14 may have any shape, such as a rectangular parallelepiped, a cylinder, or a prism.

[0012] The cathode 12 is provided on the inner surface of the atomic beam generation chamber 14. The cathode 12 may be provided over the entire inner surface of the atomic beam generation chamber 14, or may be provided on a part of the inner surface. The cathode 12 may be made of carbon, metal, alloy, or the like. The cathode 12 may be made of a non-magnetic material that becomes magnetic due to distortion or rapid cooling, such as austenitic stainless steel. In this case, when part of the cathode 12 that has been given a thermal history or distortion due to collision of plasma with the cathode 12 peels off to generate fine particles, the fine particles that have become magnetic due to rapid cooling or distortion can be trapped in the magnetic field generation unit 17, so that it is possible to prevent the fine particles from being irradiated together with the atomic beam.

[0013] The anode 11 is provided inside the atom beam generation chamber 14. The anode 11 may have a shape such as a cylinder or a prism. The anode 11 may be provided across one side surface of the atom beam generation chamber 14 and the opposite side surface. The anode 11 may be made of carbon, a metal, an alloy, or the like.

[0014] The insulator 13 is provided on the outside of the cathode 12 and protects the outside of the cathode 12 to which a high DC voltage is applied. The insulator 13 may be made of any material having insulating properties.

[0015] The gas introduction part 15 introduces a gas into the space between the anode 11 and the cathode 12 in the atom beam generation chamber 14. The gas introduction part 15 is provided on a side surface of the atom beam generation chamber 14. The gas introduction part 15 may be provided on a side surface different from the side surface on which the anode 11 is provided. The gas may be, for example, argon (Ar).

[0016] The power supply 20 applies a high DC voltage between the anode 11 and the cathode 12 in order to generate an atomic beam of the gas introduced through the gas inlet portion 15 .

[0017] A plurality of through holes penetrating the cathode 12 are provided on the side surface of the atomic beam generation chamber 14 as irradiation ports 16 for irradiating the atomic beam generated inside the atomic beam generation chamber 14 to the outside. The irradiation ports 16 may be provided on a side surface different from the side surface on which the anode 11 is provided. The irradiation ports 16 may be provided on a side surface different from the side surface on which the gas introduction part 15 is provided. The irradiation ports 16 may be provided on a side surface opposite to the side surface on which the gas introduction part 15 is provided.

[0018] The magnetic field generating unit 17 generates a magnetic field in a direction perpendicular to the long axis of the anode 11 inside the atomic beam generation chamber 14. The magnetic field generating unit 17 may be a permanent magnet or a coil. The magnetic field generating unit 17 generates a magnetic field at least in the space between the anode 11 and the irradiation port 16. This causes the Ar + This can suppress the generation of particles due to collision of the cathode 12 with the cathode 12 and sputtering.

[0019] An atomic beam generator 10 is installed in a vacuum chamber of a bonding apparatus for bonding wafers, and Ar gas is introduced between the anode 11 and the cathode 12 from a gas inlet 15. When a high DC voltage is applied between the anode 11 and the cathode 12 from a power source 20 to generate a glow discharge, electrons 18 emitted into the gas convert Ar + Plasma is generated. Ar + moves at high speed between the electrodes, and when it collides with an Ar atom, it receives an electron and becomes a high-energy neutral Ar atom. + The Ar atoms receive electrons from the cathode 12 and are neutralized. Some of these neutralized high-energy Ar atoms fly out of the irradiation port 16, becoming a high-speed Ar atomic beam 19. The high-speed Ar atomic beam 19 is irradiated onto a wafer 30, thereby performing a surface activation process for bonding the wafer 30.

[0020] FIG. 2 shows the electric potential distribution inside the atomic beam generation chamber 14 when a magnetic field is applied and when a magnetic field is not applied. Compared to when no magnetic field is applied (a), when a magnetic field is applied perpendicular to the long axis of the anode 11 (b), the electric potential distribution of Ar +The plasma is guided to the irradiation port 16 side by the magnetic field. As a result, Ar + This can suppress the generation of fine particles due to sputtering caused by collisions between the particles.

[0021] In order to estimate the effect of the magnetic field, the Ar + The plasma flux was calculated. Figure 3 shows a model of the atomic beam generation chamber 14 used in the calculation. f indicates the flux at a certain point. Σf indicates the total amount of flux in a certain range (upper surface, left surface, right surface, lower surface). Σf all denotes the total flux on the entire surface, and Σf all =Σf 上面 +Σf 左面 +Σf 右面 +Σf 下面 Σf out indicates the total flux at the irradiation port 16. FIG. 4 shows the dimensions of the model of the atomic beam generation chamber 14 used in the calculation.

[0022] FIG. 5 shows the calculation results of the flux inside the atomic beam generation chamber 14. The numerical values ​​in the figure are the total flux Σf out For example, F 上面 =Σf 上面 / Σf out The flux ratio R is F B / F0, where F B is the normalized flux when a magnetic field is applied, and F0 is the normalized flux when no magnetic field is applied. The flux ratio represents the change in the total amount of flux to the side due to the application of a magnetic field. In other words, the flux ratio represents the change in the amount of fine particles generated by sputtering on the side due to the application of a magnetic field.

[0023] As shown in Fig. 5, when no magnetic field was applied, the normalized flux totals on each surface were almost the same, but when a magnetic field was applied, the normalized flux totals on the top surface decreased drastically, and the normalized flux totals on the left and right surfaces also decreased significantly. The flux ratio was 0.448, indicating that the magnetic field can suppress the generation of fine particles.

[0024] In this manner, according to the atomic beam generator 10 of the present embodiment, the generation of fine particles inside the atomic beam generation chamber 14 can be suppressed, so that the inclusion of fine particles in the high-speed atomic beam can be suppressed, and thus poor bonding of the wafer can be suppressed. Also, the atomic beam generation chamber 14, the anode 11, the cathode 12, the magnetic field generation unit 17, and the irradiation port 16 can be structured to have a long shape in the long axis direction of the anode 11, so that the atomic beam generator 10 capable of irradiating a large area can be realized.

[0025] 6, 7, and 8 show examples of the magnetic field generating unit 17 of the atomic beam generating device 10 according to this embodiment. In Fig. 6, 7, and 8, the upper side shows a schematic cross-sectional view as seen from the front, and the lower side shows a schematic cross-sectional view as seen from the top.

[0026] In the example shown in FIG. 6, a magnetic field is applied in a uniform direction across the space between the anode 11 and the illumination port 16 .

[0027] In the example shown in Fig. 7, magnetic fields of alternately reversed directions are applied in the space between the anode 11 and the irradiation port 16. In the example shown in Fig. 7, a leftward magnetic field is applied to the upper half of the space between the anode 11 and the irradiation port 16, and a rightward magnetic field is applied to the lower half of the space, so that two magnetic fields of alternately reversed directions are applied. In another example, three or more magnetic fields of alternately reversed directions may be applied in the space between the anode 11 and the irradiation port 16.

[0028] In the example shown in Fig. 8, the magnetic field generating unit 17 has a Halbach array in the space between the anode 11 and the irradiation port 16. The Halbach array is an array formed by rotating the magnetization direction of permanent magnets, and has the characteristic that sinusoidal magnetic flux is concentrated on one side and almost no magnetic flux is generated on the opposite side. This allows the magnetic flux to be concentrated inside the atomic beam generation chamber 14, and the magnetic field strength inside the atomic beam generation chamber 14 to be increased.

[0029] An oxide film removal test was carried out using an atomic beam generator to investigate the irradiation performance of the atomic beam generator. As the atomic beam generator 10 according to the embodiment, a uniform magnetic field type atomic beam generator 10 having a magnetic field generating unit 17 that generates a uniform magnetic field as shown in FIG. 6 and an alternating magnetic field type atomic beam generator 10 having a magnetic field generating unit 17 that generates an alternating magnetic field as shown in FIG. 7 were used. In addition, a conventional atomic beam generator described in Patent Document 1 was used as a comparative example. A 4-inch diameter Si wafer with a 500 nm oxide film was used. The wafer and the atomic beam generator 10 were placed facing each other in a vacuum chamber, and a high-speed atomic beam was irradiated from the atomic beam generator 10 to the wafer. The voltage was 1.0 kV, the current was 100 mA, and the irradiation time was 300 seconds. The film thickness was measured using an optical interference film thickness measuring instrument (Nanometrics Nanospec M5100). As experimental results, distribution graphs of the etching rate with the removal center as the origin are shown in FIG. 9, FIG. 10, and FIG. 11.

[0030] FIG. 9 shows the results of an experiment using the atomic beam generator of the comparative example. The elevation etching rate was 129.6 (nm / h), and the volume etching rate was 1.68 (mm 3 / h).

[0031] 10 shows the results of an experiment using a uniform magnetic field type atomic beam generator 10. The elevation etching rate was 300.0 (nm / h), and the volume etching rate was 3.73 (mm 3 / h).

[0032] 11 shows the results of an experiment using the alternating magnetic field type atomic beam generator 10. The elevation etching rate was 700.8 (nm / h), and the volume etching rate was 4.49 (mm3 / h).

[0033] The above experimental results show that the atomic beam generating apparatus 10 of this embodiment can improve the atomic beam irradiation performance.

[0034] Using the atomic beam generator of the comparative example and the atomic beam generator 10 of the uniform magnetic field type, the atomic beam was irradiated for 30 seconds and then stopped for about 10 minutes under conditions that gave the same etching rate, and the amount of fine particles generated in the atomic beam generation chamber 14 was confirmed every 100 times. FIG. 12 shows the inside of the atomic beam generation chamber after irradiating the atomic beam 200 times using the atomic beam generator of the comparative example. After irradiating the atomic beam 200 times, it was confirmed that fine particles were generated inside the atomic beam generation chamber. FIG. 13 shows the inside of the atomic beam generation chamber 14 after irradiating the atomic beam 400 times using the atomic beam generator 10 of the uniform magnetic field type. Even when irradiating the atomic beam 400 times, no fine particles were generated inside the atomic beam generation chamber 14. The above experimental results show that the generation of fine particles can be suppressed by the atomic beam generator 10 of the embodiment.

[0035] Figures 14 and 15 show another example of the magnetic field generating unit 17. Figures 14 and 15 show schematic cross-sectional views seen from above.

[0036] In the example shown in Fig. 14, a yoke 21 is provided outside the magnetic field generating unit 17 shown in Fig. 6. In the example shown in Fig. 15, a yoke 21 is provided outside the magnetic field generating unit 17 shown in Fig. 8. The yoke 21 may be made of a material with high magnetic permeability, such as iron. The magnetic field generating unit 17 and the yoke 21 are extended to the outside of the atomic beam generation chamber 14, and a space 22 is provided between the yoke 21 and the atomic beam generation chamber 14.

[0037] Fig. 16 shows the results of an analysis of the magnetic field generated by the magnetic field generating unit 17 shown in Fig. 6. A uniform magnetic field is generated except at the ends of the magnetic field generating unit 17, but the magnetic field becomes non-uniform at the ends of the magnetic field generating unit 17.

[0038] FIG. 17 shows the results of analyzing the magnetic field generated by the magnetic field generating unit 17 shown in FIG. 14. FIG. 18 shows the results of analyzing the magnetic field generated by the magnetic field generating unit 17 shown in FIG. 15. It was shown that a more uniform magnetic field can be realized by providing the yoke 21 and the space 22. Since a uniform magnetic field can be generated over a wider range, the irradiation port 16 can also be made horizontally elongated. In this case, the irradiation performance of the atomic beam generator 10 can be further improved.

[0039] FIG. 19 shows the magnetic flux density of the magnetic field in the atomic beam generator. FIG. 19(a) shows the magnetic flux density of the magnetic field in the conventional atomic beam generator described in Patent Document 1. FIG. 19(b) shows the magnetic flux density of the magnetic field in the atomic beam generator 10 having the magnetic field generating unit 17 shown in FIG. 14. FIG. 19(c) shows the magnetic flux density of the magnetic field in the atomic beam generator 10 having the magnetic field generating unit 17 shown in FIG. 15. It has been shown that a stronger magnetic field can be generated by the configurations shown in FIG. 14 and FIG. 15. This allows the same effect to be obtained even with a weaker magnet, so that samarium-cobalt magnets, ferrite magnets, alnico magnets, etc., which are more heat-resistant and less expensive than neodymium magnets, can be used.

[0040] Fig. 20 shows another configuration example of the atom beam generating apparatus 10 according to the embodiment. The left side of Fig. 20 shows a schematic cross-sectional view seen from the front, and the right side of Fig. 20 shows an enlarged view of the vicinity of the irradiation port 16 in Fig. 20.

[0041] In the example shown in FIG. 20, a gas introduction part 15 is provided near the irradiation port 16. Since Ar atoms are introduced near the irradiation port 16, Ar atoms are always abundantly present near the irradiation port 16. Therefore, high-speed Ar accelerated between the electrodes +With the charge exchange between the Ar atoms and the Ar atoms, a high-speed atomic beam of Ar can be efficiently generated in the vicinity of the irradiation port 16. This makes it possible to improve the generation efficiency and irradiation efficiency of the high-speed atomic beam.

[0042] 20, a gas exhaust section 23 for exhausting gas from inside the atomic beam generation chamber 14 is provided near the irradiation port 16 and on a side opposite the irradiation port 16 and away from the irradiation port 16. The gas exhaust section 23 is connected to a vacuum pump or the like. This allows the particles generated inside the atomic beam generation chamber 14 to be quickly exhausted, thereby preventing the particles from being mixed into the high-speed atomic beam.

[0043] Fig. 21 shows another configuration example of the atom beam generating device 10 according to the embodiment of the present disclosure. The upper side of Fig. 21 shows a schematic cross-sectional view seen from the front, and the lower side of Fig. 21 shows a schematic cross-sectional view seen from the top.

[0044] 21, the atomic beam generation chamber 14 has a shape constituting at least a part of a hollow cylinder. The anode 11, the irradiation port 16, and the magnetic field generating unit 17 have a shape constituting a part of a ring. The cathode 12 is provided on the inner surface of the atomic beam generation chamber 14.

[0045] Fig. 22 shows how a fast atomic beam is irradiated onto a wafer 30 by the atomic beam generator 10 shown in Fig. 21. The atomic beam generator 10 is configured so that the irradiation areas of the atomic beams overlap in the hollow part of the hollow cylinder. This makes it possible to realize an atomic beam generator 10 capable of irradiating a large area. Since the irradiation area of ​​the atomic beam can change depending on the distance from the irradiation port 16 to the wafer 30, the atomic beam generator 10 and a structure for holding the wafer 30 may be integrally configured.

[0046] Figure 23 shows the results of analyzing the magnetic field in the atomic beam generator 10 shown in Figure 21. The magnetic field was analyzed when 16 magnets were placed inside and outside the hollow cylinder. The magnetic field was uniformly oriented outward. As shown in Figure 23, it was confirmed that magnetic field lines appeared radially.

[0047] FIG. 24 shows the potential distribution in the atomic beam generating device 10 shown in FIG. + It was shown that the plasma was guided to the irradiation port 16 side.

[0048] Fig. 25 shows the flux distribution in the atomic beam generator 10 shown in Fig. 21. It was shown that sputtering of the cathode 12 by the Ar+ plasma was suppressed.

[0049] Fig. 26 shows the flux distribution of the fast atomic beam of Ar irradiated by the atomic beam generator 10 shown in Fig. 21. It was confirmed that the flux distributions of the atomic beams overlap in the hollow part of the hollow cylinder.

[0050] Fig. 27 shows another example of the configuration of the atom beam generator 10 according to the embodiment of the present disclosure. In the example shown in Fig. 27, the atom beam generator 10 includes an atom beam generator 10a arranged on the upper side and an atom beam generator 10b arranged on the lower side. The left side of Fig. 27 shows a schematic cross-sectional view from the front, and the right side of Fig. 27 shows a schematic cross-sectional view from the top of the atom beam generator 10a and the atom beam generator 10b.

[0051] The atomic beam generator 10a and the atomic beam generator 10b have a shape constituting a part of a hollow cylinder, and are configured so that the irradiation axis of the atomic beam is inclined toward the hollow part of the hollow cylinder. The upper atomic beam generator 10a irradiates the wafer 30b placed on the lower holder 31b with an atomic beam. The lower atomic beam generator 10b irradiates the wafer 30a placed on the upper holder 31a with an atomic beam. The atomic beam generator 10a and the holder 31a may be integrally configured. The atomic beam generator 10b and the holder 31b may be integrally configured. The atomic beam generator 10a, the holder 31a, the atomic beam generator 10b, and the holder 31b may be integrally configured. In order to suppress interference between the high-speed atomic beams irradiated from the atomic beam generator 10a and the atomic beam generator 10b, the irradiation port 16 of the atomic beam generator 10a and the irradiation port 16 of the atomic beam generator 10b may be configured to be out of phase with each other.

[0052] When bonding the wafers 30a and 30b, the atomic beam generator 10a irradiates the wafer 30b with a fast atomic beam, and the atomic beam generator 10b irradiates the wafer 30a with a fast atomic beam. After the irradiation is completed, the holders 31a and 31b are brought close to each other to bond the wafers 30a and 30b.

[0053] Fig. 28 shows another example of the configuration of the atomic beam generator 10 according to the embodiment of the present disclosure. In the example shown in Fig. 28, an irradiation port 16a and an irradiation port 16b are provided on the opposing surfaces of the cathode 12. This allows the fast atomic beam to be irradiated simultaneously on both sides of the atomic beam generator 10, so that the single atomic beam generator 10 can irradiate the fast atomic beam simultaneously on the wafers 30a and 30b to be bonded.

[0054] The atomic beam generator 10 is configured so that the irradiation axis of the atomic beam irradiated from the irradiation port 16a and the irradiation port 16b is horizontal, diagonally downward, or diagonally upward. As a result, even if fine particles are irradiated from the irradiation port 16a or the irradiation port 16b, they can be dropped by gravity, so that the adhesion of the fine particles to the surfaces of the wafers 30a and 30b can be suppressed. The atomic beam generators 10a and 10b in this example may be the same as any of the above-mentioned atomic beam generators 10, may be conventional atomic beam generators, or may be any other type of atomic beam generator.

[0055] The present disclosure has been described above based on examples. These examples are merely illustrative, and it will be understood by those skilled in the art that various modifications are possible in the combination of each component and each treatment process, and that such modifications are also within the scope of the present disclosure. [Explanation of symbols]

[0056] 10 atomic beam generator, 11 anode, 12 cathode, 13 insulator, 14 atomic beam generation chamber, 15 gas inlet, 16 irradiation port, 17 magnetic field generator, 18 electrons, 19 fast atomic beam, 20 power supply, 21 yoke, 22 space, 23 gas exhaust, 30 wafer, 31 holder.

Claims

1. a cathode provided on an inner surface of the atomic beam generation chamber for generating an atomic beam; an anode provided inside the atomic beam generation chamber; a gas inlet for introducing a gas into the atomic beam generation chamber; a power source for applying a high voltage between the anode and the cathode to generate an atomic beam of the gas; A magnetic field generating unit that generates a magnetic field in a direction perpendicular to the longitudinal axis of the anode; an irradiation port provided in the cathode for irradiating the generated atomic beam; Equipped Atomic beam generator.

2. The magnetic field generating unit generates a magnetic field at least in a space between the anode and the irradiation port.

2. The atomic beam generating device according to claim 1.

3. The magnetic field generating unit generates a magnetic field in a uniform direction inside the atomic beam generation chamber.

3. The atomic beam generating device according to claim 1 or 2.

4. The magnetic field generating unit generates magnetic fields in alternate directions inside the atomic beam generating chamber.

3. The atomic beam generating device according to claim 1 or 2.

5. The magnetic field generating unit has a Halbach array 3. The atomic beam generating device according to claim 1 or 2.

6. A yoke is provided outside the magnetic field generating unit.

2. The atomic beam generating device according to claim 1.

7. The magnetic field generating unit and the yoke are extended to the outside of the atomic beam generation chamber.

7. The atomic beam generating device according to claim 6.

8. The cathode is made of a non-magnetic material that becomes magnetic when struck by plasma generated inside the atomic beam generation chamber.

3. The atomic beam generating device according to claim 1 or 2.

9. The atomic beam generation chamber, the anode, the magnetic field generation unit, and the irradiation port have a shape elongated in the long axis direction of the anode.

3. The atomic beam generating device according to claim 1 or 2.

10. The atomic beam generation chamber has a shape constituting at least a part of a hollow cylinder.

3. The atomic beam generating device according to claim 1 or 2.

11. The atomic beam irradiation regions are configured to overlap in the hollow portion of the hollow cylinder. The atomic beam generating device according to claim 10.

12. The gas introduction part is provided in the vicinity of the irradiation port.

3. The atomic beam generating device according to claim 1 or 2.

13. a gas exhaust section provided in at least one of the vicinity of the irradiation port and the side surface facing the irradiation port for exhausting gas from inside the atomic beam generating device; 3. The atomic beam generating device according to claim 1 or 2.

14. The axis of the atomic beam emitted from the irradiation port is configured to be horizontal, diagonally downward, or diagonally upward.

3. The atomic beam generating device according to claim 1 or 2.

15. The irradiation ports are provided on each of the opposing surfaces of the cathode.

3. The atomic beam generating device according to claim 1 or 2.

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